Energy efficiency analysis method and device for trench Schottky diode

Abstract

The present application provides an energy efficiency analysis method and device for a trench Schottky diode, which relates to the field of semiconductor manufacturing technology, including: establishing a set of application scenarios for trench Schottky diodes, and performing criticality analysis of energy efficiency-related parameters to establish key energy efficiency parameters; configuring an ideal simulation model to perform simulation tests on the application scenario set, recording simulation test results, and establishing ideal energy efficiency performance for the trench Schottky diode; using the application scenario set to build a test scenario, perform energy efficiency tests on the trench Schottky diode, and establish scenario energy efficiency test results; aligning scenario energy efficiency test results with ideal energy efficiency performance, establishing scenario energy efficiency and parasitic energy efficiency losses; and performing application scenario energy efficiency management based on scenario energy efficiency and parasitic energy efficiency losses. The present application solves the technical problem that existing methods are difficult to capture the impact of application scenario differences and parasitic effects on energy efficiency, resulting in incomplete and inaccurate energy efficiency analysis, and improves the accuracy and comprehensiveness of energy efficiency analysis.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to an energy efficiency analysis method and device for a trench Schottky diode. Background Art

[0002] Trench Schottky diodes, as key components in high-performance power electronic devices, have demonstrated excellent performance in high-frequency switching circuits, power management, and inverters with their low forward voltage drop, high switching speed, and excellent temperature characteristics. Currently, the commonly used trench Schottky diode energy efficiency analysis methods mainly include empirical model method, experimental test method, and simplified simulation model method. The empirical model method relies on historical data and empirical formulas to estimate energy efficiency. Although it is simple and fast, it often lacks accuracy. The experimental test method evaluates the energy efficiency of the diode by actually testing it under different conditions. It can provide more accurate results, but it is difficult to cover all possible application scenarios and is costly. Although the simplified simulation model method is more accurate than the empirical model, it cannot capture complex physical phenomena.

[0003] The above methods tend to analyze the energy efficiency of devices under ideal conditions, which often simplifies the complexity of the actual working environment and fails to fully consider the impact of different application scenarios on device performance. More importantly, these methods ignore the negative impact of parasitic parameters (such as parasitic capacitance and resistance) on energy efficiency, resulting in a large deviation between the evaluation results and actual applications. Although this idealized analysis method is easy to operate, it fails to fully reflect the energy efficiency performance of trench Schottky diodes in real environments, limits the in-depth understanding of its performance bottlenecks, and hinders the precise implementation of energy efficiency optimization. Summary of the invention

[0004] The present application provides an energy efficiency analysis method and device for a trench Schottky diode, which solves the technical problem that the existing energy efficiency analysis method focuses on ideal conditions and specific scenario analysis, and is difficult to capture the impact of differences in different application scenarios and parasitic effects on the energy efficiency of trench Schottky diodes, resulting in insufficient comprehensive and accurate energy efficiency analysis. The application achieves the technical effect of improving the accuracy and comprehensiveness of energy efficiency analysis and enhancing the precision of energy efficiency management.

[0005] In view of the above problems, on the one hand, the present application provides an energy efficiency analysis method for a trench Schottky diode, the method comprising: establishing an application scenario set for the trench Schottky diode, performing a criticality analysis of energy efficiency-related parameters on the application scenario set, and establishing key energy efficiency parameters mapped to the application scenario set; configuring an ideal simulation model of the trench Schottky diode, performing simulation tests on the ideal simulation model through the application scenario set, recording the simulation test results according to the key energy efficiency parameters, and establishing an ideal energy efficiency performance of the trench Schottky diode, wherein the ideal energy efficiency performance has a mapping relationship with the application scenario set; using the application scenario set to build a test scenario, and performing an energy efficiency test of the trench Schottky diode based on the test scenario to establish a scenario energy efficiency test result; after aligning the scenario energy efficiency test result with the ideal energy efficiency performance, establishing the scenario energy efficiency and parasitic energy efficiency loss using the ideal energy efficiency performance and the scenario energy efficiency test result; and performing application scenario energy efficiency management of the trench Schottky diode according to the scenario energy efficiency and parasitic energy efficiency loss.

[0006] On the other hand, the present application also provides an energy efficiency analysis device for a trench Schottky diode, the device comprising: a key energy efficiency parameter analysis module, the key energy efficiency parameter analysis module is used to establish an application scenario set of the trench Schottky diode, perform a criticality analysis of energy efficiency-related parameters on the application scenario set, and establish key energy efficiency parameters mapped to the application scenario set; an ideal energy efficiency test module, the ideal energy efficiency test module is used to configure an ideal simulation model of the trench Schottky diode, perform simulation tests on the ideal simulation model through the application scenario set, record the simulation test results according to the key energy efficiency parameters, and establish the ideal energy efficiency performance of the trench Schottky diode. An ideal energy efficiency performance and an application scenario set have a mapping relationship; a scenario energy efficiency test module, the scenario energy efficiency test module is used to build a test scenario using the application scenario set, and perform energy efficiency tests on trench Schottky diodes based on the test scenarios to establish scenario energy efficiency test results; an energy efficiency loss determination module, the energy efficiency loss determination module is used to align data between the scenario energy efficiency test results and the ideal energy efficiency performance, and then use the ideal energy efficiency performance and the scenario energy efficiency test results to establish scenario energy efficiency and parasitic energy efficiency losses; an application scenario energy efficiency management module, the energy efficiency management module is used to perform application scenario energy efficiency management of trench Schottky diodes based on the scenario energy efficiency and parasitic energy efficiency losses.

[0007] One or more technical solutions provided in this application have at least the following technical effects or advantages:

[0008] Establish a set of application scenarios for trench Schottky diodes, perform criticality analysis of energy efficiency-related parameters on the application scenario set, and establish key energy efficiency parameters mapped to the application scenario set. This step provides focus and direction for subsequent simulation and testing by systematically identifying and analyzing the key energy efficiency parameters of trench Schottky diodes in various possible application scenarios. Configure an ideal simulation model for trench Schottky diodes, perform simulation tests on the ideal simulation model through a set of application scenarios, record simulation test results based on key energy efficiency parameters, and establish the ideal energy efficiency performance of trench Schottky diodes. This step determines the theoretical optimal energy efficiency state, provides a benchmark for comparing scenario test results, and establishes a mapping between key energy efficiency parameters and scenarios, ensuring that simulation and test results can be directly associated with specific application scenarios, improving the practicality and pertinence of the analysis. Use the application scenario set to build a test scenario, perform energy efficiency tests on trench Schottky diodes based on the test scenario, and establish scenario energy efficiency test results. This step provides data support for subsequent comparative analysis and energy efficiency loss assessment by building test scenarios in actual environments, performing energy efficiency tests, and collecting performance data under real conditions. After aligning the scenario energy efficiency test results with the ideal energy efficiency performance, the scenario energy efficiency and parasitic energy efficiency loss are established using the ideal energy efficiency performance and scenario energy efficiency test results. This step quantifies the parasitic energy efficiency loss and clarifies the performance gap between the actual performance and the ideal model, thereby identifying the specific source of energy efficiency loss. Based on the scenario energy efficiency and parasitic energy efficiency loss, the application scenario energy efficiency management of the trench Schottky diode is performed to optimize the performance of the trench Schottky diode in different scenarios.

[0009] In summary, this application comprehensively evaluates the energy efficiency performance of trench Schottky diodes in different application scenarios through the combination of simulation and scenario testing. By comparing the ideal model with the scenario test results, the specific source of energy efficiency loss is clarified, and then the application scenario energy efficiency management is performed based on the scenario energy efficiency and parasitic energy efficiency loss, and the performance of trench Schottky diodes is optimized in a targeted manner, significantly improving their energy efficiency level and stability. In short, this technical solution improves the accuracy and comprehensiveness of energy efficiency analysis, provides empirical data and strategic guidance for energy efficiency optimization, and enhances the performance and reliability of trench Schottky diodes in actual applications.

[0010] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 A schematic flow chart of an energy efficiency analysis method for a trench Schottky diode provided in an embodiment of the present application;

[0012] Figure 2 A schematic diagram of a process for establishing parasitic energy efficiency loss in the energy efficiency analysis method of a trench Schottky diode provided in an embodiment of the present application;

[0013] Figure 3 A schematic diagram of the structure of an energy efficiency analysis device for a trench Schottky diode provided in an embodiment of the present application.

[0014] Explanation of the reference numerals: key energy efficiency parameter analysis module 10 , ideal energy efficiency test module 20 , scenario energy efficiency test module 30 , energy efficiency loss determination module 40 , application scenario energy efficiency management module 50 . DETAILED DESCRIPTION

[0015] The embodiments of the present application provide an energy efficiency analysis method and device for a trench Schottky diode, thereby solving the technical problem that the existing energy efficiency analysis method focuses on analysis of ideal conditions and specific scenarios, and is difficult to capture the impact of differences in different application scenarios and parasitic effects on the energy efficiency of trench Schottky diodes, resulting in insufficiently comprehensive and accurate energy efficiency analysis. The embodiments of the present application achieve the technical effect of improving the accuracy and comprehensiveness of energy efficiency analysis and enhancing the precision of energy efficiency management.

[0016] Embodiment 1, as Figure 1 As shown, an embodiment of the present application provides an energy efficiency analysis method for a trench Schottky diode, the method comprising:

[0017] Step S1: establishing an application scenario set of a trench Schottky diode, performing a criticality analysis of energy efficiency-related parameters on the application scenario set, and establishing key energy efficiency parameters mapped to the application scenario set.

[0018] Specifically, the application scenario set is a summary of the use of trench Schottky diodes in different working environments. An application scenario set is established based on the possible working environments of trench Schottky diodes, which includes various working scenarios, such as high-frequency switching power supplies, frequency converters, solar inverters, etc.

[0019] For each application scenario, identify the various parameters that may affect the energy efficiency of the trench Schottky diode. These parameters are called energy efficiency-related parameters, such as operating voltage, operating current, switching frequency, temperature, etc. Through correlation analysis and regression analysis, analyze the criticality of energy efficiency-related parameters and application scenarios one by one, evaluate the importance of each energy efficiency-related parameter on the overall energy efficiency, identify the energy efficiency-related parameters that have a significant impact on the energy efficiency of the trench Schottky diode in the application scenario, identify them as the key energy efficiency parameters in the application scenario, and establish a mapping relationship between the application scenario and the key energy efficiency parameters. For example, in solar inverters, energy efficiency is most affected by temperature; in high-frequency switching power supply scenarios, using correlation analysis and regression analysis, it is found that the switching frequency has a direct relationship with energy efficiency loss.

[0020] Through criticality analysis, the key parameters that affect energy efficiency in each scenario are determined, which provides direction for subsequent simulation model construction and scenario testing, ensures the targetedness of subsequent steps, and thus improves test analysis efficiency.

[0021] Step S2: configure an ideal simulation model of a trench Schottky diode, perform simulation tests on the ideal simulation model through a set of application scenarios, record simulation test results according to key energy efficiency parameters, and establish an ideal energy efficiency performance of the trench Schottky diode, wherein the ideal energy efficiency performance has a mapping relationship with the set of application scenarios.

[0022] Specifically, circuit simulation software, such as SPICE or MATLAB Simulink, is used to construct an ideal simulation model of the trench Schottky diode, and model parameters are configured according to the ideal physical and electrical characteristics of the trench Schottky diode. The ideal simulation model assumes that the device has no loss and non-ideal effects, such as parasitic resistance and capacitance.

[0023] According to the application scenario set in step S1, the ideal simulation model is placed in different scenarios for simulation testing, the key energy efficiency parameter test results in different application scenarios are recorded, and the test results are processed by data analysis software to determine the ideal energy efficiency performance of the trench Schottky diode in each application scenario in the application scenario set, and establish a mapping relationship between the ideal energy efficiency performance and the application scenario set. For example, Excel or MATLAB data analysis tools, such as curve fitting and statistical analysis, can be used to process simulation data and extract the ideal energy efficiency performance of the diode in each application scenario.

[0024] Step S2 determines the energy efficiency performance of the trench Schottky diode under an ideal state in a set of application scenarios through model construction and simulation testing, providing a comparison basis for subsequent scenario testing and energy efficiency comparison.

[0025] Step S3: construct a test scenario using the application scenario set, and perform an energy efficiency test of a trench Schottky diode based on the test scenario to establish a scenario energy efficiency test result.

[0026] Specifically, according to the set of application scenarios established in step S1, corresponding test scenarios are built. These test scenarios are used to simulate the operating state of the trench Schottky diode in actual applications to evaluate the performance of the device. For example, for electric vehicle charging applications, a test circuit can be built, including a power supply, a load, and a trench Schottky diode; for high-frequency switching power supply scenarios, a test circuit including a power module, a Schottky diode, and a load resistor is built. The test environment can use laboratory equipment such as an oscilloscope, a multimeter, and a signal generator to ensure that the test data can be effectively captured.

[0027] Energy efficiency tests are performed in these test scenarios, voltage and current are applied to trench Schottky diodes, and the working status of the diodes, such as on-state voltage, reverse recovery time, etc., are recorded. The data acquisition system is used to record various data during the test in real time, including key energy efficiency parameters. Based on the test data, the energy efficiency performance in different scenarios is analyzed and summarized, and the scenario energy efficiency test results are established.

[0028] Taking the high-frequency switching power supply scenario as an example, the specific steps of the scenario test are as follows:

[0029] Construct a high-frequency switching power supply circuit in the laboratory, including a power module, a trench Schottky diode, a controller, and a load resistor. Set the operating current to 10A and the switching frequency to 100kHz to simulate the actual application scenario. Use an oscilloscope to monitor the input and output voltages, an ammeter and a voltmeter to record the voltage across the diode and the current passing through, and a thermal imager to monitor the diode temperature. After recording the data, use MATLAB for data processing, calculate the conversion efficiency and temperature change, and analyze the energy efficiency performance of the diode under high-frequency switching conditions. Organize the data and write a test report, including the test background, methods, data results, and preliminary analysis, to provide data support for subsequent steps.

[0030] Step S3 determines the performance data of the trench Schottky diode under actual working conditions through scenario testing, providing a practical basis for subsequent energy efficiency loss analysis.

[0031] Step S4: After aligning the scene energy efficiency test results and the ideal energy efficiency performance, the scene energy efficiency and parasitic energy efficiency loss are established using the ideal energy efficiency performance and the scene energy efficiency test results.

[0032] Specifically, parasitic energy efficiency loss is energy loss caused by non-ideal characteristics inside the device, such as parasitic resistance and capacitance, in actual operation. The scenario energy efficiency test results of step S3 are matched with the two sets of data under the same application scenario and test environment in the ideal energy efficiency performance of step S2, and the two sets of data are converted into a unified format for effective comparison. For example, both sets of data can be converted to the same unit and standardized according to different working conditions.

[0033] Next, we establish scenario energy efficiency based on the ideal energy efficiency performance. The scenario energy efficiency is the energy efficiency performance adjusted based on the ideal energy efficiency performance after considering the thermal effect in the operation of the trench Schottky diode. We compare the difference between the scenario test results and the scenario energy efficiency, and quantify the energy efficiency loss caused by non-ideal factors, namely parasitic energy efficiency loss, based on the results of the comparative analysis.

[0034] Through step S4, the energy efficiency loss caused by non-ideal factors in actual applications is analyzed and quantified, providing a direct basis for subsequent energy efficiency management.

[0035] Step S5: performing application scenario energy efficiency management of the trench Schottky diode according to the scenario energy efficiency and parasitic energy efficiency loss.

[0036] Specifically, according to the scenario energy efficiency and parasitic energy efficiency loss obtained in step S4, the main loss sources are determined, and optimization strategies are formulated for each loss source. These strategies include improving device design, adjusting working conditions, and using more efficient materials. For example, for parasitic inductance, you can consider optimizing the circuit layout; for parasitic resistance, choose higher quality materials. Then, according to the optimization strategy, implement specific optimization measures. For example, if it is found that parasitic resistance in a high temperature environment causes energy efficiency to decrease, you can consider using materials with higher conductivity to reduce parasitic resistance. Finally, re-perform the scenario energy efficiency test on the trench Schottky diode after the optimization measures are implemented to verify the effectiveness of the optimization measures. According to the test results, the optimization strategy is continuously adjusted to form a closed-loop optimization process.

[0037] Step S5 formulates targeted energy efficiency optimization measures according to scenario energy efficiency and parasitic energy efficiency loss, significantly improving the energy efficiency performance of trench Schottky diodes in different application scenarios.

[0038] Furthermore, the set of application scenarios described in the embodiments of the present application include a high-frequency switching power supply scenario, a solar inverter scenario, an automotive electrical system scenario, and a wireless communication base station equipment scenario.

[0039] Specifically, according to the common scenarios of trench Schottky diodes, the application scenario set established in step S1 includes but is not limited to high-frequency switching power supply scenarios, solar inverter scenarios, automotive electrical system scenarios, and wireless communication base station equipment scenarios. High-frequency switching power supply scenarios generally require trench Schottky diodes to have low conduction voltage drop and fast switching characteristics to reduce switching losses and improve power efficiency. In solar inverters, trench Schottky diodes are used to convert direct current generated by solar panels into alternating current for use in home or commercial power grids. Trench Schottky diodes in this scenario need to be able to operate stably over a wide temperature range and have good durability. Trench Schottky diodes in automotive electrical systems are used for rectification and power management, and need to operate stably under high temperature and vibration environments, and have high reliability and long life. In the wireless communication base station equipment scenario, trench Schottky diodes are used for power management, RF amplifiers and other components. These applications require trench Schottky diodes to have low noise characteristics and good performance at high frequencies. These scenarios cover most of the working environments that trench Schottky diodes may face to ensure the comprehensiveness of energy efficiency analysis.

[0040] Furthermore, step S1 of the embodiment of the present application further includes:

[0041] Establish a criticality ratio threshold; sequentially sort the parameter correlations of the energy efficiency related parameters in the application scenario set and establish a sequential sorting result; take the maximum parameter correlation of the sequential sorting result as the starting point, perform sequential parameter correlation accumulation, and perform parameter correlation accumulation trigger judgment through the criticality ratio threshold; select the key energy efficiency parameters of the corresponding application scenario set according to the trigger judgment result, reconstruct the key values ​​according to the parameter correlation, and identify the key energy efficiency parameters with the key value reconstruction results.

[0042] Specifically, the criticality ratio threshold is a preset standard used to determine whether the parameter correlation is important enough to decide whether to include it in the consideration of key energy efficiency parameters. The criticality ratio threshold is established based on experience or industry standards. The parameter correlation of all energy efficiency related parameters in the application scenario set is calculated through linear regression or correlation analysis. The parameter correlation is an indicator to measure the degree of influence of each parameter on energy efficiency in the application scenario. The calculated parameter correlation is sorted from high to low to generate a sequential sorting result.

[0043] The maximum parameter correlation value in the sorting result is taken as the starting point. Starting from the maximum correlation value, the sorted parameter correlations are accumulated in sequence. When the accumulated value reaches or exceeds the set criticality ratio threshold, the trigger is determined. After the trigger is determined, the accumulated parameters are used as key energy efficiency parameters, and the key values ​​are reconstructed according to the parameter correlation. The key value of each key energy efficiency parameter is updated according to the proportion of the key value of each key energy efficiency parameter in all selected key energy efficiency parameters, and then the updated key value is marked for the selected key energy efficiency parameter.

[0044] For example, in a certain application scenario, there are four energy efficiency related parameters A, B, C, and D. The order of the parameters is sorted according to their relevance, and the order of the result is (A: 40%, B: 30%, C: 20%, D: 10%). The criticality ratio threshold is set to 80%.

[0045] Starting from parameter A, the cumulative trigger judgment of parameter association is performed. If the cumulative comprehensive value of parameters A, B, and C is 90%, which exceeds the criticality ratio threshold of 80%, parameters A, B, and C are determined as key energy efficiency parameters, and their key values ​​are reconstructed. The key value of parameter A = 40% / (40%+30%+20%) ≈ 44.5%, the key value of parameter B = 30% / (40%+30%+20%) ≈ 33.3%, and the key value of parameter C = 20% / (40%+30%+20%) ≈ 22.2%. Mark the reconstructed key values ​​of key energy efficiency parameters A, B, and C.

[0046] The above steps determine the energy efficiency related parameters with a greater correlation with the application scenario through cumulative trigger judgment and key value reconstruction, determine the focus of subsequent testing and analysis, improve energy efficiency analysis and efficiency while saving computing resources.

[0047] Further, such as Figure 2 As shown, step S4 of the embodiment of the present application also includes:

[0048] A joint physical field model is established, wherein the joint physical field model is an electric-thermal physical field coupling model; test data of a simulation test is called, and the test data is used as input data, input into the joint physical field model, and a temperature rise fitting result is generated; energy efficiency compensation of an ideal energy efficiency performance is performed using the temperature rise fitting result, and the energy efficiency compensation result is used as the scenario energy efficiency; parasitic energy efficiency loss is established based on the scenario energy efficiency test result and the scenario energy efficiency.

[0049] Specifically, an electro-thermal physical field coupling model is established through finite element analysis software to simulate the heat and electrical characteristics generated when current passes through the trench Schottky diode. The results of the simulation test in step S2 are obtained and used as input data to enter the electro-thermal physical field coupling model. Through simulation, the temperature rise trend of the trench Schottky diode under the test conditions is predicted, and the temperature rise fitting results are generated. These temperature rise fitting results are temperature rise prediction data calculated by the joint physical field model, showing the temperature change of the device under different working conditions.

[0050] According to the temperature rise fitting results, the ideal energy efficiency performance is corrected and adjusted to make it closer to the performance under actual working conditions. The energy efficiency performance after compensation is the scene energy efficiency. Compare the scene energy efficiency test results with the compensated scene energy efficiency, calculate the difference between the two sets of data, and define the difference as parasitic energy efficiency loss to identify the additional energy loss caused by parasitic effects in actual operation.

[0051] Through the above steps, the effect of temperature on energy efficiency is taken into account, and energy efficiency compensation is performed on the ideal energy efficiency performance, so as to more accurately quantify the parasitic energy efficiency loss and improve the accuracy of energy efficiency analysis.

[0052] Furthermore, step S5 of the embodiment of the present application further includes:

[0053] An aging test is performed on the material of the trench Schottky diode to establish an aging degeneration time node, and the aging degeneration time node is mapped with an aging result; the aging energy efficiency loss of the parasitic energy efficiency loss is fitted using the aging degeneration time node to establish the aging parasitic energy efficiency loss; the parasitic energy efficiency loss is used to perform a temperature dependence analysis of the parasitic effect, and the temperature parasitic energy efficiency loss is established based on the temperature dependence analysis result; the energy efficiency management of the trench Schottky diode in the application scenario is performed according to the aging parasitic energy efficiency loss and the temperature parasitic energy efficiency loss.

[0054] Specifically, simulate the environment in actual applications to perform material aging tests on trench Schottky diodes, record performance changes at different time points, determine the turning point of performance degradation during the aging process, that is, the aging degeneration time node, and map it to the corresponding aging results. Analyze the test data at each time node to identify performance change trends. For example, over time, the on-state voltage drop of the device may gradually increase, and the switching speed may gradually slow down. Collect energy efficiency data from aging tests, use regression analysis based on time nodes, fit the aging effect curve on energy efficiency loss, and determine the aging parasitic energy efficiency loss.

[0055] Next, the trench Schottky diode is tested at different temperatures, and key parameters such as on-state voltage drop and switching speed are recorded. The test data is analyzed using curve fitting, regression analysis and other methods to determine how parasitic effects change with temperature, and a temperature dependency model is established. The model can be a mathematical formula or icon that shows how parasitic energy loss changes with temperature. Based on the results of the temperature dependency analysis, the parasitic energy efficiency loss caused by temperature changes, namely the temperature parasitic energy efficiency loss, is determined.

[0056] Based on the parasitic energy efficiency loss due to aging and the parasitic energy efficiency loss due to temperature, targeted application scenario energy efficiency management strategies are formulated for different usage stages and temperature changes, such as adjusting operating parameters, improving heat dissipation conditions, etc., to ensure that the trench Schottky diode maintains optimal energy efficiency during long-term use, thereby improving the performance and reliability of the entire system.

[0057] Furthermore, the method described in the embodiment of the present application also includes:

[0058] Configure an internal embedded sensor of the trench Schottky diode, and use the internal embedded sensor and key energy efficiency parameters to establish a key parasitic parameter data set; perform timing similarity verification of parasitic energy efficiency loss through the key parasitic parameter data set; establish data correction compensation based on the timing similarity verification result, and after optimizing the associated parasitic energy efficiency loss with the data correction compensation, perform energy efficiency management of the application scenario of the trench Schottky diode.

[0059] Specifically, sensors are installed inside the trench Schottky diode, which can monitor the key performance parameters of the device in real time, such as temperature, current, etc. During the operation of the trench Schottky diode, the key performance parameters of the trench Schottky diode are monitored in real time through the internal embedded sensors, and these data are recorded and summarized to establish a key parasitic parameter data set. Each set of data in the data set is timestamped to mark the time of data acquisition. Data at multiple time points are selected from the key parasitic parameter data set, and the key parasitic parameter change trends at multiple time points are compared with the aforementioned aging parasitic energy efficiency loss and temperature parasitic energy efficiency loss through correlation analysis to verify the time series change pattern of the parasitic energy efficiency loss. The results of the time series similarity verification are analyzed to determine the deviation or error in the data. According to the analysis results, correction methods such as mathematical formulas, curve fitting, and regression analysis are selected to adjust the data, optimize the associated parasitic energy efficiency loss, eliminate the deviation or error, and more accurately determine the actual parasitic energy efficiency loss of the trench Schottky diode. Parasitic energy efficiency loss is optimized according to the compensation results, and energy efficiency management of the application scenario of the trench Schottky diode is performed.

[0060] Through the above steps, timing verification and data correction compensation are carried out to improve the accuracy and reliability of parasitic energy efficiency loss data, thereby further improving the accuracy of energy efficiency management.

[0061] Furthermore, the method described in the embodiment of the present application also includes:

[0062] A correlation model is established according to a set of application scenarios and key energy efficiency parameters, wherein the correlation model stores the correlation degree of parasitic energy efficiency loss; the parasitic energy efficiency loss is jointly compensated by using the correlation model and data correction compensation to complete the optimization of the correlated parasitic energy efficiency loss.

[0063] Specifically, in different application scenarios in the application scenario set, the correlation or degree of influence between the corresponding key energy efficiency parameters and the energy efficiency loss caused by parasitic effects is determined through regression analysis and correlation analysis, and the corresponding correlation of parasitic energy efficiency loss is obtained. The correlation is usually a quantitative indicator, which can be a correlation coefficient or regression coefficient, which is used to indicate the strength and direction of the relationship between the key parameters and the parasitic energy efficiency loss. For example, a 1% change in a parameter may result in a percentage change in loss. Due to the different working conditions of trench Schottky diodes in different application scenarios, the correlation between key energy efficiency parameters and parasitic energy efficiency losses may also be different. Therefore, the correlation usually needs to be evaluated for specific application scenarios.

[0064] According to the results of the correlation analysis, machine learning algorithms such as regression analysis, decision trees, random forests, and support vector machines are used to establish correlation models, with working conditions and operating parameters as inputs and parasitic energy efficiency losses as outputs. Through training with a large amount of historical data, the relationship between input parameters and parasitic energy efficiency losses is accurately mapped. The correlation model is used to predict parasitic energy efficiency losses under specific application scenarios and working conditions, and the parasitic energy efficiency losses are corrected by combining data correction compensation with the model prediction results to optimize the parasitic energy efficiency losses and make them closer to the values ​​in the actual application scenarios, thereby providing more accurate guidance for energy efficiency management in application scenarios.

[0065] In summary, the energy efficiency analysis method of the trench Schottky diode provided in the embodiment of the present application has the following technical effects:

[0066] Establish a set of application scenarios for trench Schottky diodes, perform criticality analysis of energy efficiency-related parameters on the application scenario set, and establish key energy efficiency parameters mapped to the application scenario set. This step provides focus and direction for subsequent simulation and testing by systematically identifying and analyzing the key energy efficiency parameters of trench Schottky diodes in various possible application scenarios. Configure an ideal simulation model for trench Schottky diodes, perform simulation tests on the ideal simulation model through a set of application scenarios, record simulation test results based on key energy efficiency parameters, and establish the ideal energy efficiency performance of trench Schottky diodes. This step determines the theoretical optimal energy efficiency state, provides a benchmark for comparing scenario test results, and establishes a mapping between key energy efficiency parameters and scenarios, ensuring that simulation and test results can be directly associated with specific application scenarios, improving the practicality and pertinence of the analysis. Use the application scenario set to build a test scenario, perform energy efficiency tests on trench Schottky diodes based on the test scenario, and establish scenario energy efficiency test results. This step provides data support for subsequent comparative analysis and energy efficiency loss assessment by building test scenarios in actual environments, performing energy efficiency tests, and collecting performance data under real conditions. After aligning the data of the scenario energy efficiency test results and the ideal energy efficiency performance, the joint physical field model is used to compensate the ideal energy efficiency performance for energy efficiency, and the disadvantage is given to the scenario energy efficiency. The parasitic energy efficiency loss is established through the scenario energy efficiency and the scenario energy efficiency test results. This step quantifies the parasitic energy efficiency loss and clarifies the performance gap between the actual performance and the ideal model, thereby identifying the specific source of the energy efficiency loss. Through the aging test and temperature dependence analysis of the material, the aging parasitic energy efficiency loss and the temperature parasitic energy efficiency loss are further determined to identify the changing trend of the parasitic energy efficiency loss, and the data correction compensation and the correlation model are combined for joint compensation to complete the optimization of the associated parasitic energy efficiency loss, so as to more accurately predict the actual parasitic energy efficiency loss of the trench Schottky diode in different application scenarios. According to the scenario energy efficiency and parasitic energy efficiency loss, the application scenario energy efficiency management of the trench Schottky diode is carried out to optimize the performance of the trench Schottky diode in different scenarios.

[0067] Overall, the embodiment of the present application comprehensively evaluates the energy efficiency performance of trench Schottky diodes in different application scenarios through the combination of simulation and scenario testing. By comparing the ideal model with the scenario test results, the specific source of energy efficiency loss is clarified, and accurate parasitic energy efficiency loss analysis results are obtained. Then, based on the scenario energy efficiency and parasitic energy efficiency loss, application scenario energy efficiency management is performed, and the performance of trench Schottky diodes is optimized in a targeted manner, significantly improving their energy efficiency level and stability. This method improves the accuracy and comprehensiveness of energy efficiency analysis, provides empirical data and strategic guidance for energy efficiency optimization, and enhances the performance and reliability of trench Schottky diodes in practical applications.

[0068] Embodiment 2, as Figure 3 As shown, an embodiment of the present application provides an energy efficiency analysis device for a trench Schottky diode, the device comprising:

[0069] The key energy efficiency parameter analysis module 10 is used to establish an application scenario set of trench Schottky diodes, perform criticality analysis of energy efficiency related parameters on the application scenario set, and establish key energy efficiency parameters mapped to the application scenario set.

[0070] An ideal energy efficiency test module 20 is used to configure an ideal simulation model of a trench Schottky diode, perform simulation tests on the ideal simulation model through a set of application scenarios, record simulation test results according to key energy efficiency parameters, and establish an ideal energy efficiency performance of the trench Schottky diode. The ideal energy efficiency performance has a mapping relationship with the set of application scenarios.

[0071] The scenario energy efficiency test module 30 is used to build a test scenario using an application scenario set, and perform an energy efficiency test of a trench Schottky diode based on the test scenario to establish a scenario energy efficiency test result.

[0072] The energy efficiency loss determination module 40 is used to align the scene energy efficiency test results with the ideal energy efficiency performance, and then use the ideal energy efficiency performance and the scene energy efficiency test results to establish the scene energy efficiency and parasitic energy efficiency loss.

[0073] The application scenario energy efficiency management module 50 is used to perform application scenario energy efficiency management of the trench Schottky diode according to the scenario energy efficiency and parasitic energy efficiency loss.

[0074] Furthermore, the set of application scenarios described in the embodiments of the present application include a high-frequency switching power supply scenario, a solar inverter scenario, an automotive electrical system scenario, and a wireless communication base station equipment scenario.

[0075] Furthermore, the key energy efficiency parameter analysis module 10 of the embodiment of the present application is also used to perform the following steps:

[0076] Establish a criticality ratio threshold; sequentially sort the parameter correlations of the energy efficiency related parameters in the application scenario set and establish a sequential sorting result; take the maximum parameter correlation of the sequential sorting result as the starting point, perform sequential parameter correlation accumulation, and perform parameter correlation accumulation trigger judgment through the criticality ratio threshold; select the key energy efficiency parameters of the corresponding application scenario set according to the trigger judgment result, reconstruct the key values ​​according to the parameter correlation, and identify the key energy efficiency parameters with the key value reconstruction results.

[0077] Furthermore, the energy efficiency loss determination module 40 in the embodiment of the present application is also used to perform the following steps:

[0078] A joint physical field model is established, wherein the joint physical field model is an electric-thermal physical field coupling model; test data of a simulation test is called, and the test data is used as input data, input into the joint physical field model, and a temperature rise fitting result is generated; energy efficiency compensation of an ideal energy efficiency performance is performed using the temperature rise fitting result, and the energy efficiency compensation result is used as the scenario energy efficiency; parasitic energy efficiency loss is established based on the scenario energy efficiency test result and the scenario energy efficiency.

[0079] Furthermore, the application scenario energy efficiency management module 50 of the embodiment of the present application is also used to perform the following steps:

[0080] An aging test is performed on the material of the trench Schottky diode to establish an aging degeneration time node, and the aging degeneration time node is mapped with an aging result; the aging energy efficiency loss of the parasitic energy efficiency loss is fitted using the aging degeneration time node to establish the aging parasitic energy efficiency loss; the parasitic energy efficiency loss is used to perform a temperature dependence analysis of the parasitic effect, and the temperature parasitic energy efficiency loss is established based on the temperature dependence analysis result; the energy efficiency management of the trench Schottky diode in the application scenario is performed according to the aging parasitic energy efficiency loss and the temperature parasitic energy efficiency loss.

[0081] Furthermore, the device described in the embodiment of the present application is also used to perform the following steps:

[0082] Configure an internal embedded sensor of the trench Schottky diode, and use the internal embedded sensor and key energy efficiency parameters to establish a key parasitic parameter data set; perform timing similarity verification of parasitic energy efficiency loss through the key parasitic parameter data set; establish data correction compensation based on the timing similarity verification result, and after optimizing the associated parasitic energy efficiency loss with the data correction compensation, perform energy efficiency management of the application scenario of the trench Schottky diode.

[0083] Furthermore, the device described in the embodiment of the present application is also used to perform the following steps:

[0084] A correlation model is established according to a set of application scenarios and key energy efficiency parameters, wherein the correlation model stores the correlation degree of parasitic energy efficiency loss; the parasitic energy efficiency loss is jointly compensated by using the correlation model and data correction compensation to complete the optimization of the correlated parasitic energy efficiency loss.

[0085] Through the above-mentioned detailed description of the energy efficiency analysis method of the trench Schottky diode in this specification, those skilled in the art can clearly understand the energy efficiency analysis device of the trench Schottky diode in this embodiment. For the device disclosed in the second embodiment, since it corresponds to the method disclosed in the first embodiment and has corresponding functional modules and beneficial effects, the relevant parts can be referred to the description of the method part.

[0086] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for analyzing the energy efficiency of a trench Schottky diode, characterized in that: The method comprises: Establishing an application scenario set of trench Schottky diodes, performing criticality analysis of energy efficiency-related parameters on the application scenario set, and establishing key energy efficiency parameters mapped to the application scenario set; An ideal simulation model of a trench Schottky diode is configured, simulation tests of the ideal simulation model are performed through a set of application scenarios, simulation test results are recorded according to key energy efficiency parameters, and an ideal energy efficiency performance of the trench Schottky diode is established, wherein the ideal energy efficiency performance has a mapping relationship with the set of application scenarios; Use the application scenario set to build a test scenario, perform energy efficiency testing of trench Schottky diodes based on the test scenario, and establish scenario energy efficiency test results; After aligning the scenario energy efficiency test results with the ideal energy efficiency performance, the scenario energy efficiency and parasitic energy efficiency loss are established using the ideal energy efficiency performance and scenario energy efficiency test results; Perform energy efficiency management of trench Schottky diodes in application scenarios based on the scenario energy efficiency and parasitic energy efficiency loss; Wherein, the use of the ideal energy efficiency performance and the scene energy efficiency test results to establish the scene energy efficiency and parasitic energy efficiency loss also includes: Establishing a joint physical field model, wherein the joint physical field model is an electric-thermal physical field coupling model; Calling test data of the simulation test, and inputting the test data as input data into the joint physical field model to generate a temperature rise fitting result; Use the temperature rise fitting results to perform energy efficiency compensation for ideal energy efficiency performance, and use the energy efficiency compensation results as the scene energy efficiency; Establish parasitic energy efficiency loss based on scenario energy efficiency test results and scenario energy efficiency; Wherein, the energy efficiency management of the trench Schottky diode in the application scenario according to the scenario energy efficiency and parasitic energy efficiency loss also includes: Performing an aging test on the material of the trench Schottky diode and establishing an aging degeneration time node, wherein the aging degeneration time node is mapped with an aging result; Using the aging variation time node to perform aging energy efficiency loss fitting of parasitic energy efficiency loss, and establish aging parasitic energy efficiency loss; The parasitic energy efficiency loss is used to analyze the temperature dependence of the parasitic effect, and the temperature parasitic energy efficiency loss is established based on the temperature dependence analysis results; Energy efficiency management of trench Schottky diodes in application scenarios is performed based on aging parasitic energy efficiency loss and temperature parasitic energy efficiency loss.

2. The energy efficiency analysis method of a trench Schottky diode according to claim 1, characterized in that: The application scenario set includes high-frequency switching power supply scenarios, solar inverter scenarios, automotive electrical system scenarios, and wireless communication base station equipment scenarios.

3. The energy efficiency analysis method of the trench Schottky diode according to claim 2, characterized in that: The performing criticality analysis of energy efficiency related parameters on the application scenario set and establishing key energy efficiency parameters mapped to the application scenario set also includes: Establish criticality ratio thresholds; Sequentially sort the parameter correlations of the energy efficiency related parameters in the application scenario set, and establish a sequential sorting result; The maximum value of the parameter correlation of the sequential sorting result is taken as the starting point, and the sequential parameter correlation accumulation is performed, and the parameter correlation accumulation trigger determination is performed through the criticality ratio threshold; According to the trigger judgment result, the key energy efficiency parameters of the corresponding application scenario set are selected, and the key values ​​are reconstructed according to the parameter correlation, and the key energy efficiency parameter identification is performed on the key value reconstruction results.

4. The energy efficiency analysis method of a trench Schottky diode according to claim 1, characterized in that: The method further comprises: configuring an internal embedded sensor of a trench Schottky diode, and establishing a key parasitic parameter data set using the internal embedded sensor and key energy efficiency parameters; Timing similarity verification of parasitic energy efficiency loss through key parasitic parameter data sets; Data correction compensation is established based on the timing similarity verification results. After optimizing the associated parasitic energy efficiency loss with data correction compensation, energy efficiency management of the application scenario of trench Schottky diodes is performed.

5. The energy efficiency analysis method of a trench Schottky diode according to claim 4, characterized in that: The method further comprises Establishing a correlation model according to the application scenario set and the key energy efficiency parameter, wherein the correlation model stores the correlation degree of the parasitic energy efficiency loss; The associated model and data correction compensation are used to jointly compensate for parasitic energy efficiency losses and optimize the associated parasitic energy efficiency losses.

6. An energy efficiency analysis device for a trench Schottky diode, characterized in that: The device is used to perform the energy efficiency analysis method of the trench Schottky diode according to any one of claims 1 to 5, and the device comprises: A key energy efficiency parameter analysis module, the key energy efficiency parameter analysis module is used to establish an application scenario set of trench Schottky diodes, perform criticality analysis of energy efficiency-related parameters on the application scenario set, and establish key energy efficiency parameters mapped to the application scenario set; An ideal energy efficiency test module, the ideal energy efficiency test module is used to configure an ideal simulation model of a trench Schottky diode, perform simulation tests on the ideal simulation model through a set of application scenarios, record simulation test results according to key energy efficiency parameters, and establish an ideal energy efficiency performance of the trench Schottky diode, wherein the ideal energy efficiency performance has a mapping relationship with the set of application scenarios; A scenario energy efficiency test module, wherein the scenario energy efficiency test module is used to build a test scenario using an application scenario set, and perform an energy efficiency test of a trench Schottky diode based on the test scenario to establish a scenario energy efficiency test result; An energy efficiency loss determination module, wherein the energy efficiency loss determination module is used to align the scene energy efficiency test results with the ideal energy efficiency performance, and then use the ideal energy efficiency performance and the scene energy efficiency test results to establish the scene energy efficiency and parasitic energy efficiency loss; An application scenario energy efficiency management module is used to perform application scenario energy efficiency management of trench Schottky diodes based on the scenario energy efficiency and parasitic energy efficiency loss.

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