AR / VR full-color Micro-LED display device and preparation method thereof

Abstract

The present invention relates to an AR / VR full-color Micro-LED display device and a preparation method thereof, and relates to the field of semiconductor display technology. In the preparation method of the AR / VR full-color Micro-LED display device of the present application, a first protective layer, a second protective layer and a third protective layer are stacked, and the density of the second protective layer is greater than the density of the first protective layer, and the density of one side of the second protective layer adjacent to the first protective layer is less than the density of the other side of the second protective layer, and the density difference between the two sides is 0.6-1.5 g / cm 3 The density of the third protective layer is greater than the density of the other side of the second protective layer. By setting a second protective layer with gradually changing density, the density of the second protective layer is gradually improved, which effectively protects the first protective layer while increasing the rigidity of the outer surface of the second protective layer. The third protective layer has greater rigidity, thereby effectively protecting the Micro-LED chip during subsequent transfer processes and use.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor light emitting technology, and in particular to an AR / VR full-color Micro-LED display device and a preparation method thereof. Background Art

[0002] Micro-LED (micro light-emitting diode) is a miniaturized and matrixed product of LED technology, and its pixel unit size is usually below 50 microns. This technology has shown great potential in the display field with its self-luminescence, low power consumption, high brightness, high contrast, and long life. Micro-LED display panels do not require backlights and auxiliary optical components, making the device thinner and lighter. At the same time, its ultra-high brightness and efficiency also meet the needs of AR / VR devices for high-quality visual experience. The application advantages of Micro-LED in the AR / VR field are mainly reflected in the following technical advantages: high resolution and high PPD (pixels per degree), high brightness and contrast, low power consumption and long life, miniaturization and lightweight. How to improve the preparation process of AR / VR full-color Micro-LED display devices to improve the stability of AR / VR full-color Micro-LED display devices is a problem of widespread concern in the industry. Summary of the invention

[0003] The purpose of the present invention is to overcome the deficiencies of the above-mentioned prior art and provide an AR / VR full-color Micro-LED display device and a preparation method thereof.

[0004] To achieve the above object, the present invention proposes a method for preparing an AR / VR full-color Micro-LED display device, the preparation method comprising the following steps:

[0005] A growth substrate is provided, and an epitaxial functional layer is epitaxially grown on the growth substrate.

[0006] Then, a plurality of first electrodes and a plurality of second electrodes are formed on the epitaxial functional layer to form a Micro-LED wafer.

[0007] The Micro-LED wafer is then cut to form a plurality of Micro-LED chips, and then a wafer expansion process is performed to increase the spacing between adjacent Micro-LED chips, so that each of the Micro-LED chips includes a first electrode and a second electrode.

[0008] Then, the plurality of Micro-LED chips after the crystal expansion process are transferred to a carrier, and the first electrode and the second electrode of each Micro-LED chip are both oriented toward the carrier.

[0009] Then, a first protective layer is formed on the side and top surfaces of each of the Micro-LED chips, wherein the first protective layer has a microporous structure.

[0010] Next, a metal material is deposited on the first protective layer by a magnetron sputtering process to form metal particles in the microporous structure in the first protective layer, and then the first protective layer on the top surface of each of the Micro-LED chips is removed;

[0011] Then, a second protective layer is formed on the first protective layer and on the top surface of each of the Micro-LED chips, wherein the density of the second protective layer is greater than that of the first protective layer, and the density of one side of the second protective layer adjacent to the first protective layer is less than that of the other side of the second protective layer, and the density difference between the two sides is 0.6-1.5 g / cm 3 .

[0012] Then, a third protective layer is formed on the second protective layer, wherein the density of the third protective layer is greater than the density of the other side of the second protective layer.

[0013] Next, a driving substrate is provided, and the Micro-LED chip is transferred to the driving substrate by using a transfer device, so that the first electrode and the second electrode of the Micro-LED chip are electrically connected to the conductive circuit of the driving substrate.

[0014] Then, a packaging layer is formed to form an AR / VR full-color Micro-LED display device.

[0015] As a preferred technical solution, before transferring the plurality of Micro-LED chips after the crystal expansion process to the carrier, a buffer layer is provided on the carrier, so that the first electrode and the second electrode of each Micro-LED chip are embedded in the buffer layer.

[0016] As a preferred technical solution, the first protective layer includes silicon oxide or silicon oxynitride, and the average density of the first protective layer is 1.8-2.6 g / cm 3 .

[0017] As a preferred technical solution, a microporous structure is formed in the first protective layer by an etching process.

[0018] As a preferred technical solution, the material of the second protective layer includes one or more of silicon nitride, aluminum oxide, silicon carbide, titanium nitride, niobium oxide, and titanium oxide, and the average density of the second protective layer is 3-5g / cm 3 .

[0019] As a preferred technical solution, the second protective layer is formed by an atomic layer deposition process, a magnetron sputtering process and / or a chemical vapor deposition process.

[0020] As a preferred technical solution, the material of the third protective layer includes one or more of indium oxide, hafnium oxide, tin oxide, zinc oxide, and zirconium oxide. The average density of the third protective layer is 5.5-10 g / cm 3 .

[0021] As a preferred technical solution, the encapsulation layer includes resin material.

[0022] The present invention also proposes an AR / VR full-color Micro-LED display device, which is manufactured using the above-mentioned AR / VR full-color Micro-LED display device preparation method.

[0023] The beneficial effects of the present invention are:

[0024] In the preparation method of the AR / VR full-color Micro-LED display device of the present application, a first protective layer is formed on the side and top surface of each Micro-LED chip, and the first protective layer has a microporous structure, and then a metal material is deposited on the first protective layer by a magnetron sputtering process to form metal particles in the microporous structure in the first protective layer, and then the first protective layer on the top surface of each Micro-LED chip is removed. By setting the above process, the light reflection performance of the side of each Micro-LED chip can be greatly improved, and the light extraction efficiency of the Micro-LED chip can be greatly improved, and light crosstalk between adjacent Micro-LED chips can be avoided; and in the present application, a first protective layer, a second protective layer and a third protective layer are stacked, and the density of the second protective layer is greater than the density of the first protective layer, and the density of one side of the second protective layer adjacent to the first protective layer is less than the density of the other side of the second protective layer, and the density difference between the two sides is 0.6-1.5g / cm 3 The density of the third protective layer is greater than the density of the other side of the second protective layer. By setting a second protective layer with gradually changing density, the density of the second protective layer is gradually improved, which effectively protects the first protective layer while increasing the rigidity of the outer surface of the second protective layer. The third protective layer has greater rigidity, thereby effectively protecting the Micro-LED chip during subsequent transfer processes and use. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 Shown is a schematic diagram of the structure of forming a Micro-LED wafer in an embodiment of the present invention.

[0026] Figure 2It is a schematic diagram showing the structure of transferring a plurality of Micro-LED chips after the crystal expansion process to a carrier board in an embodiment of the present invention.

[0027] Figure 3 It is a schematic diagram showing the structure of forming a first protective layer, a second protective layer and a third protective layer in an embodiment of the present invention.

[0028] Figure 4 It is a schematic diagram showing the structure of transferring the Micro-LED chip to the driving substrate in an embodiment of the present invention.

[0029] Figure 5 It is a schematic diagram showing the structure of forming an encapsulation layer in an embodiment of the present invention. DETAILED DESCRIPTION

[0030] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thoroughly and comprehensively understood.

[0031] like Figure 1 to Figure 5 As shown, this embodiment provides a method for preparing an AR / VR full-color Micro-LED display device, and the preparation method comprises the following steps:

[0032] like Figure 1 As shown, a growth substrate 100 is provided, and an epitaxial functional layer 200 is epitaxially grown on the growth substrate 100 .

[0033] In a specific embodiment, the growth substrate 100 may be a sapphire substrate, the epitaxial functional layer 200 is formed by an MOCVD process, and the epitaxial functional layer 200 includes a buffer layer, a first semiconductor layer, a quantum well light-emitting layer, and a second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are gallium nitride layers with different doping types, specifically, the first semiconductor layer is a silicon-doped n-type gallium nitride layer or a magnesium-doped p-type gallium nitride layer, and correspondingly, the second semiconductor layer is a magnesium-doped p-type gallium nitride layer or a silicon-doped n-type gallium nitride layer; the quantum well light-emitting layer may be an InGaN quantum well layer and a GaN quantum barrier layer that are alternately grown.

[0034] like Figure 1 As shown, a plurality of first electrodes 301 and a plurality of second electrodes 302 are then formed on the epitaxial functional layer 200 to form a Micro-LED wafer.

[0035] In a specific embodiment, in a specific embodiment, the first electrode 301 is electrically connected to the first semiconductor layer in the epitaxial functional layer 200, and the second electrode 302 is electrically connected to the second semiconductor layer in the epitaxial functional layer 200, and the material of the first electrode 301 and the second electrode 302 includes one or more of gold, silver, titanium, palladium, nickel, and copper, and the first electrode 301 and the second electrode 302 are formed by magnetron sputtering or evaporation process.

[0036] The Micro-LED wafer is then cut to form a plurality of Micro-LED chips 400 , and then expanded to increase the spacing between adjacent Micro-LED chips 400 , so that each of the Micro-LED chips 400 includes a first electrode 301 and a second electrode 302 .

[0037] In a specific embodiment, a plurality of Micro-LED chips 400 are formed by laser cutting.

[0038] like Figure 2 As shown, the plurality of Micro-LED chips 400 after the crystal expansion process are then transferred to the carrier 500 , and the first electrode 301 and the second electrode 302 of each Micro-LED chip 400 are oriented toward the carrier 500 .

[0039] In a specific embodiment, before transferring the plurality of Micro-LED chips 400 after the crystal expansion process to the carrier 500 , a buffer layer 501 is disposed on the carrier 500 , so that the first electrode 301 and the second electrode 302 of each Micro-LED chip 400 are embedded in the buffer layer 501 .

[0040] In a specific embodiment, the carrier 500 is one of a metal substrate, a ceramic substrate and a semiconductor substrate.

[0041] In a specific embodiment, the buffer layer 501 may be a temporary adhesive layer, which may protect the first electrode 301 and the second electrode 302 of each of the Micro-LED chips 400 .

[0042] like Figure 3 As shown, a first protective layer 601 is then formed on the side and top surfaces of each of the Micro-LED chips 400 , wherein the first protective layer 601 has a microporous structure (not shown).

[0043] In a specific implementation, the first protective layer 601 includes silicon oxide or silicon oxynitride, and the average density of the first protective layer 601 is 1.8-2.6 g / cm 3 .

[0044] In a specific embodiment, a microporous structure is formed in the first protective layer 601 by an etching process.

[0045] In a specific embodiment, a silicon oxide layer or a silicon oxynitride layer is formed by a PECVD process as the first protective layer 601. When preparing the silicon oxide layer or the silicon oxynitride layer, the flow rate of silane gas, the flow rate of oxygen, the flow rate of the nitrogen source, the pressure of the reaction chamber and / or the reaction temperature are adjusted to prepare a loosely arranged silicon oxide layer or silicon oxynitride layer, so that the average density of the obtained first protective layer 601 is 1.8 g / cm 3 , 1.9g / cm 3 , 2g / cm 3 , 2.1g / cm 3 , 2.2g / cm 3 , 2.4g / cm 3 or 2.6g / cm 3 .

[0046] In a specific embodiment, the first protective layer 601 is irradiated with laser to form a plurality of randomly arranged microporous structures on the surface of the first protective layer 601 . Since the first protective layer 601 has a loose texture, a plurality of microporous structures can be formed by irradiating the surface of the first protective layer 601 with laser.

[0047] In a specific embodiment, a metal material is then deposited on the first protective layer 601 by a magnetron sputtering process to form metal particles in the microporous structure in the first protective layer 601, and then the first protective layer 601 on the top surface of each of the Micro-LED chips 400 is removed;

[0048] In a specific embodiment, a 1-3 nm metal copper layer is deposited on the surface of the first protective layer 601 through a magnetron sputtering process, and then heat-treated at 100-200°C for 1-5 minutes. Due to the presence of the microporous structure, the metal copper particles formed by the agglomeration of the metal copper layer under the heat treatment are easily formed in the microporous structure, and thus most of the metal copper particles are agglomerated in the microporous structure.

[0049] In a specific embodiment, the first protection layer 601 on the top surface of each of the Micro-LED chips 400 is removed by a grinding process.

[0050] like Figure 3As shown, a second protective layer 602 is then formed on the first protective layer 601 and on the top surface of each of the Micro-LED chips 400, wherein the density of the second protective layer 602 is greater than the density of the first protective layer 601, and the density of one side of the second protective layer 602 adjacent to the first protective layer 601 is less than the density of the other side of the second protective layer 602, and the density difference between the two sides is 0.6-1.5 g / cm 3 .

[0051] In a specific embodiment, the material of the second protective layer 602 includes one or more of silicon nitride, aluminum oxide, silicon carbide, titanium nitride, niobium oxide, and titanium oxide. The average density of the second protective layer 602 is 3-5 g / cm 3 .

[0052] In a specific embodiment, the second protection layer 602 is formed by an atomic layer deposition process, a magnetron sputtering process and / or a chemical vapor deposition process.

[0053] In a specific embodiment, magnetron sputtering of titanium oxide is used as an example. By adjusting the vacuum degree and sputtering power of the sputtering chamber of the magnetron sputtering process, for example, sputtering is performed for 1-2 minutes under the condition of a sputtering power of 10-15 kW, and then the sputtering power is gradually reduced, and the sputtering is continued for 5-15 minutes to obtain a titanium oxide layer as the second protective layer 602. The average density of the second protective layer 602 is 4 g / cm 3 , and the density of one side of the second protective layer 602 adjacent to the first protective layer 601 is less than the density of the other side of the second protective layer 602, and the density difference between the two sides is 0.6 g / cm 3 , that is, the density of the second protective layer 602 on the side adjacent to the first protective layer 601 is 3.6 g / cm 3 The density of the other side of the second protective layer 602 is 4.2 g / cm 3 , and by adjusting the specific process parameters of magnetron sputtering, the density of the second protective layer 602 gradually changes.

[0054] In other embodiments, the second protective layer 602 may include a stacked structure such as silicon nitride / titanium nitride, aluminum oxide / niobium oxide, and by adjusting specific parameters of the deposition process, the density difference between the two sides of the second protective layer is 0.6 g / cm 3 , 0.8g / cm 3 , 1g / cm 3 , 1.2g / cm 3 , 1.4g / cm 3 or 1.6 g / cm 3 The average density of the second protective layer 602 is 3 g / cm 3、3.3g / cm 3 、3.6g / cm 3 、3.9g / cm 3 , 4.3g / cm 3 , 4.6g / cm 3 , 4.8g / cm 3 or 5g / cm 3 .

[0055] like Figure 3 As shown, a third protective layer 603 is then formed on the second protective layer 602 , and the density of the third protective layer 603 is greater than the density of the other side of the second protective layer 602 .

[0056] In a specific embodiment, the material of the third protective layer 603 includes one or more of indium oxide, hafnium oxide, tin oxide, zinc oxide, and zirconium oxide. The average density of the third protective layer is 5.5-10 g / cm 3 .

[0057] In a specific embodiment, the third protective layer is formed by a magnetron sputtering process. According to the different materials of the third protective layer 603, the average density of the third protective layer is 5.5 g / cm 3 , 6g / cm 3 , 7g / cm 3 , 7.5g / cm 3 , 8g / cm 3 , 8.5g / cm 3 , 9g / cm 3 or 10g / cm 3 .

[0058] In a specific embodiment, when the third protective layer 603 is indium oxide, tin oxide or zinc oxide, the third protective layer 603 is made conductive by doping with elements such as tin, fluorine or aluminum, thereby eliminating the effect of static electricity on the Micro-LED chip 400.

[0059] like Figure 4 As shown, a driving substrate 700 is then provided, and the Micro-LED chip 400 is transferred to the driving substrate 700 using a transfer device, so that the first electrode 301 and the second electrode 302 of the Micro-LED chip 400 are electrically connected to the conductive circuit of the driving substrate 700 .

[0060] like Figure 5 As shown, a packaging layer 800 is then formed to form an AR / VR full-color Micro-LED display device.

[0061] In a specific embodiment, the encapsulation layer 800 includes a resin material. More specifically, the resin material may be epoxy resin.

[0062] like Figure 5 As shown, the present invention also proposes an AR / VR full-color Micro-LED display device, which is manufactured using the above-mentioned preparation method of the AR / VR full-color Micro-LED display device.

[0063] In other preferred technical solutions, the present invention proposes a method for preparing an AR / VR full-color Micro-LED display device, the preparation method comprising the following steps:

[0064] A growth substrate is provided, and an epitaxial functional layer is epitaxially grown on the growth substrate.

[0065] Then, a plurality of first electrodes and a plurality of second electrodes are formed on the epitaxial functional layer to form a Micro-LED wafer.

[0066] The Micro-LED wafer is then cut to form a plurality of Micro-LED chips, and then a wafer expansion process is performed to increase the spacing between adjacent Micro-LED chips, so that each of the Micro-LED chips includes a first electrode and a second electrode.

[0067] Then, the plurality of Micro-LED chips after the crystal expansion process are transferred to a carrier, and the first electrode and the second electrode of each Micro-LED chip are both oriented toward the carrier.

[0068] Then, a first protective layer is formed on the side and top surfaces of each of the Micro-LED chips, wherein the first protective layer has a microporous structure.

[0069] Next, a metal material is deposited on the first protective layer by a magnetron sputtering process to form metal particles in the microporous structure in the first protective layer, and then the first protective layer on the top surface of each of the Micro-LED chips is removed;

[0070] Then, a second protective layer is formed on the first protective layer and on the top surface of each of the Micro-LED chips, wherein the density of the second protective layer is greater than that of the first protective layer, and the density of one side of the second protective layer adjacent to the first protective layer is less than that of the other side of the second protective layer, and the density difference between the two sides is 0.6-1.5 g / cm 3 .

[0071] Then, a third protective layer is formed on the second protective layer, wherein the density of the third protective layer is greater than the density of the other side of the second protective layer.

[0072] Next, a driving substrate is provided, and the Micro-LED chip is transferred to the driving substrate by using a transfer device, so that the first electrode and the second electrode of the Micro-LED chip are electrically connected to the conductive circuit of the driving substrate.

[0073] Then, a packaging layer is formed to form an AR / VR full-color Micro-LED display device.

[0074] In a more optimal technical solution, before transferring the plurality of Micro-LED chips after the crystal expansion process to the carrier, a buffer layer is provided on the carrier, so that the first electrode and the second electrode of each Micro-LED chip are embedded in the buffer layer.

[0075] In a more preferred technical solution, the first protective layer comprises silicon oxide or silicon oxynitride, and the average density of the first protective layer is 1.8-2.6 g / cm 3 .

[0076] In a more preferred technical solution, a microporous structure is formed in the first protective layer through an etching process.

[0077] In a more preferred technical solution, the material of the second protective layer includes one or more of silicon nitride, aluminum oxide, silicon carbide, titanium nitride, niobium oxide, and titanium oxide, and the average density of the second protective layer is 3-5 g / cm 3 .

[0078] In a more preferred technical solution, the second protective layer is formed by an atomic layer deposition process, a magnetron sputtering process and / or a chemical vapor deposition process.

[0079] In a more preferred technical solution, the material of the third protective layer includes one or more of indium oxide, hafnium oxide, tin oxide, zinc oxide, and zirconium oxide, and the average density of the third protective layer is 5.5-10 g / cm 3 .

[0080] In a more preferred technical solution, the encapsulation layer includes a resin material.

[0081] In other preferred technical solutions, the present invention also proposes an AR / VR full-color Micro-LED display device, which is manufactured using the above-mentioned preparation method of the AR / VR full-color Micro-LED display device.

[0082] In the preparation method of the AR / VR full-color Micro-LED display device of the present application, a first protective layer is formed on the side and top surface of each Micro-LED chip, and the first protective layer has a microporous structure, and then a metal material is deposited on the first protective layer by a magnetron sputtering process to form metal particles in the microporous structure in the first protective layer, and then the first protective layer on the top surface of each Micro-LED chip is removed. By setting the above process, the light reflection performance of the side of each Micro-LED chip can be greatly improved, and the light extraction efficiency of the Micro-LED chip can be greatly improved, and light crosstalk between adjacent Micro-LED chips can be avoided; and in the present application, a first protective layer, a second protective layer and a third protective layer are stacked, and the density of the second protective layer is greater than the density of the first protective layer, and the density of one side of the second protective layer adjacent to the first protective layer is less than the density of the other side of the second protective layer, and the density difference between the two sides is 0.6-1.5g / cm 3 The density of the third protective layer is greater than the density of the other side of the second protective layer. By setting a second protective layer with gradually changing density, the density of the second protective layer is gradually improved, which effectively protects the first protective layer while increasing the rigidity of the outer surface of the second protective layer. The third protective layer has greater rigidity, thereby effectively protecting the Micro-LED chip during subsequent transfer processes and use.

[0083] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for preparing an AR / VR full-color Micro-LED display device, characterized in that: The preparation method comprises the following steps: Providing a growth substrate, and epitaxially growing an epitaxial functional layer on the growth substrate; Then, forming a plurality of first electrodes and a plurality of second electrodes on the epitaxial functional layer to form a Micro-LED wafer; Then, the Micro-LED wafer is cut to form a plurality of Micro-LED chips, and then a wafer expansion process is performed to increase the spacing between adjacent Micro-LED chips, so that each of the Micro-LED chips includes a first electrode and a second electrode; Then, the plurality of Micro-LED chips after the crystal expansion process are transferred to a carrier, and the first electrode and the second electrode of each Micro-LED chip are oriented toward the carrier; Then, a first protective layer is formed on the side and top surface of each of the Micro-LED chips, wherein the first protective layer has a microporous structure; Next, a metal material is deposited on the first protective layer by a magnetron sputtering process to form metal particles in the microporous structure in the first protective layer, and then the first protective layer on the top surface of each of the Micro-LED chips is removed; Then, a second protective layer is formed on the first protective layer and on the top surface of each of the Micro-LED chips, wherein the density of the second protective layer is greater than that of the first protective layer, and the density of one side of the second protective layer adjacent to the first protective layer is less than that of the other side of the second protective layer, and the density difference between the two sides is 0.6-1.5 g / cm 3 ; Then, a third protective layer is formed on the second protective layer, wherein the density of the third protective layer is greater than the density of the other side of the second protective layer, wherein the first protective layer comprises silicon oxide or silicon oxynitride, and the average density of the first protective layer is 1.8-2.6 g / cm 3 The material of the second protective layer includes one or more of silicon nitride, aluminum oxide, silicon carbide, titanium nitride, niobium oxide, and titanium oxide. The average density of the second protective layer is 3-5 g / cm 3 The material of the third protective layer includes one or more of indium oxide, hafnium oxide, tin oxide, zinc oxide, and zirconium oxide. The average density of the third protective layer is 5.5-10 g / cm 3 ; Next, a driving substrate is provided, and the Micro-LED chip is transferred to the driving substrate by using a transfer device, so that the first electrode and the second electrode of the Micro-LED chip are electrically connected to the conductive circuit of the driving substrate; Then, a packaging layer is formed to form an AR / VR full-color Micro-LED display device.

2. The method for preparing an AR / VR full-color Micro-LED display device according to claim 1, characterized in that: Before transferring the plurality of Micro-LED chips after the crystal expansion process to a carrier, a buffer layer is disposed on the carrier, so that the first electrode and the second electrode of each Micro-LED chip are embedded in the buffer layer.

3. The method for preparing an AR / VR full-color Micro-LED display device according to claim 1, characterized in that: A microporous structure is formed in the first protective layer by an etching process.

4. The method for preparing an AR / VR full-color Micro-LED display device according to claim 1, characterized in that: The second protective layer is formed by an atomic layer deposition process, a magnetron sputtering process and / or a chemical vapor deposition process.

5. The method for preparing an AR / VR full-color Micro-LED display device according to claim 1, characterized in that: The encapsulation layer includes a resin material.

6. An AR / VR full-color Micro-LED display device, characterized in that: The device is manufactured by the method for preparing an AR / VR full-color Micro-LED display device according to any one of claims 1 to 5.

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