A method for preparing a CrSi resistive thin film

Abstract

The application discloses a preparation method of a CrSi resistance thin film, a femtosecond laser plasma channel annealing device and a near-infrared femtosecond laser induced backside removal device. The preparation method of the CrSi resistance thin film comprises the following steps: plating a chromium-silicon-nickel-molybdenum metal thin film on a silicon oxide sheet substrate; removing the chromium-silicon-nickel-molybdenum metal thin film in a selected area by using a near-infrared femtosecond laser; forming an aluminum-copper alloy electrode on the chromium-silicon-nickel-molybdenum metal thin film; heat treating the chromium-silicon-nickel-molybdenum metal thin film in step S3 by using a femtosecond laser plasma channel annealing technology; and patterning a PI passivation layer on the heat-treated chromium-silicon-nickel-molybdenum metal thin film. The CrSi resistance thin film prepared by the preparation method has low edge roughness, and the precision and stability of the thin film resistance are high.

Description

TECHNICAL FIELD

[0001] The application relates to the field of high-precision resistors, and particularly relates to a preparation method of a CrSi resistor thin film. BACKGROUND

[0002] With the rapid development of integrated circuit technology and the design of components and devices thereof tending to be smaller and smaller, higher requirements are put forward for resistors in integrated circuits, and high-precision thin film resistors gradually come into people's field of vision. Compared with diffusion resistors and ion implantation resistors, high-precision thin film resistors are widely applied in the fields of aerospace, automobile electronics, navigation systems and the like based on their excellent characteristics such as high resistivity, low resistance temperature coefficient, high stability, no parasitic effect and low noise. At present, thin film materials mainly include chromium-silicon thin films, nickel-chromium thin films and carbon thin films. Among them, chromium-silicon resistor alloys become the most commonly used resistor material in chip components, hybrid integrated circuits and monolithic integrated circuits due to their moderate resistance range and wide application range.

[0003] Patent application with the publication number CN110233016A discloses a preparation method of a diamond-based thin film chip resistor element, and belongs to the field of electronic component manufacturing. Diamond film is deposited on an original carrier in a CVD mode, and then grinding, polishing, dicing and etching treatment procedures are sequentially completed; then a thin film resistor is constructed on the patterned CVD diamond film surface, and resistance adjustment of the thin film resistor is realized through a heat treatment process; then electrode preparation is performed on the resistor surface; finally, the original carrier of the CVD diamond film is removed, and a diamond-based thin film resistor element with required size and resistivity is obtained. The element has the characteristics of chemical stability and high thermal conductivity based on the diamond carrier. In the intermediate process, a laser dicing assisted plasma etching process is adopted, which solves a series of problems such as great difficulty in subsequent processing of the CVD diamond film and generation of conductive carbon film after processing, and realizes batch production of the CVD diamond film-based thin film chip resistor at a relatively low cost. While reducing the relative cost, the product quality and production efficiency are ensured. However, the grinding, polishing and etching processes disclosed in the patent easily introduce new impurities, pollute the thin film and result in poor stability of the thin film resistor.

[0004] Patent application with publication number CN103151276A discloses an integrated method of high-integration power thin film hybrid integrated circuit, which adopts to integrate chips and chip components on the horizontal plane and both sides of the convex part of the convex tube base at the same time, and to make electrical connection through through holes; first, a layer of nickel-chromium alloy resistance film is formed on the ceramic substrate by sputtering or evaporation; then, a layer of metal film is formed by the same way; then, the resistance film and the metal film are subjected to photoetching and selective etching to obtain the required film pattern; after laser resistance adjustment and dicing separation, the horizontal mounting substrate and the vertical mounting substrate are obtained; then, the substrate is mounted on the horizontal plane and the vertical plane of the convex tube base, and finally, more than one semiconductor chip or chip component is integrated on the substrate by thin film hybrid integration, and the lead bonding of the semiconductor chip is completed. The selective etching of the resistance film disclosed in the patent is easy to pollute the resistance film, which leads to poor precision and stability of the resistance film.

[0005] The preparation method of the chromium-silicon resistance mainly includes photoetching, etching, heat annealing and other processes. However, the etching process, photoetching technology and heat annealing method have problems such as complex process, high preparation cost, low preparation efficiency, lack of process flexibility, environmental pollution and the like. In addition, the prepared resistance film has large edge roughness, which affects the precision and stability of the film resistance. SUMMARY

[0006] The application provides a preparation method of a CrSi resistance film, which has low edge roughness and high precision and stability of the film resistance.

[0007] The application provides a preparation method of a CrSi resistance film, which has low edge roughness and high precision and stability of the film resistance.

[0008] S1, depositing a chromium-silicon-nickel-molybdenum metal film on a silicon oxide sheet material substrate;

[0009] S2, removing the chromium-silicon-nickel-molybdenum metal film in the selected area on the back surface by near-infrared femtosecond laser induction;

[0010] S3, forming an aluminum-copper alloy electrode on the chromium-silicon-nickel-molybdenum metal film;

[0011] S4, heat treating the chromium-silicon-nickel-molybdenum metal film of step S3 by femtosecond laser plasma channel annealing technology;

[0012] S5, patterning a PI passivation layer on the heat-treated chromium-silicon-nickel-molybdenum metal film.

[0013] Preferably, the chromium-silicon-nickel-molybdenum metal film is deposited on the silicon oxide sheet substrate by a magnetron sputtering method in an atmosphere of argon and nitrogen.

[0014] Further preferably, the mass fractions of the chromium, silicon, nickel and molybdenum are 40-43%, 55%, 1-3% and 1-2%, respectively, and the flow ratio of the argon and nitrogen during the magnetron sputtering is 300-500:1.

[0015] Further preferably, the thickness of the chromium-silicon-nickel-molybdenum metal film is 10-20 nm.

[0016] Preferably, the chromium-silicon-nickel-molybdenum metal film is removed from the selected area on the back by a first device using near-infrared femtosecond laser, and the first device comprises a femtosecond laser amplifier, an electrically controlled shutter, a first λ / 2 wave plate, a polarizer, a 4X beam expander, a second λ / 2 wave plate, an optical parametric amplifier, a dichroic mirror, a CCD camera, a 10X microscope objective and an x-y-z three-dimensional electrically controlled displacement platform arranged in the order of light propagation direction.

[0017] The femtosecond laser amplifier is used to generate femtosecond laser pulses, and the wavelength of the laser pulses is 800 nm and the pulse width is 30 fs.

[0018] The electrically controlled shutter is used to control the passing and cutting of the femtosecond laser pulses.

[0019] The first λ / 2 wave plate and the polarizer are used to adjust the energy of the femtosecond laser pulses, and the polarization direction of the obtained light beam is vertical polarization.

[0020] The 4X beam expander is used to expand the beam diameter of the femtosecond laser pulses.

[0021] The second λ / 2 wave plate is used to adjust the polarization direction of the femtosecond laser pulses from vertical polarization to horizontal polarization.

[0022] The optical parametric amplifier is used to obtain a laser beam with a wavelength of 1064 nm.

[0023] The dichroic mirror, the CCD camera and the 10X microscope objective are used to focus the laser beam to the interface between the selected area of the silicon oxide wafer substrate and the chromium-silicon-nickel-molybdenum metal film, so as to remove the chromium-silicon-nickel-molybdenum metal film in the selected area.

[0024] The present application obtains a set wavelength light beam through the optical parametric amplifier, so as to obtain near-infrared femtosecond laser which can completely penetrate the silicon oxide wafer substrate, thereby realizing back etching of the chromium-silicon-nickel-molybdenum metal film.

[0025] Preferably, the energy of the laser pulses induced by the near-infrared femtosecond laser is 0.2-0.5 μJ, the scanning speed is 2-5 mm / s, and the scanning pitch is 1-3 um.

[0026] Preferably, the aluminum-copper alloy electrode is patterned by sampling the magnetron sputtering method on a hard mask, wherein the hard mask is prepared based on a femtosecond laser filament ablation technology, and the thickness of the aluminum-copper alloy is 1.0-1.2 μm.

[0027] Preferably, the chromium-silicon-nickel-molybdenum metal film of step S3 is heat treated by a second device employing a femtosecond laser plasma channel annealing technology, wherein the second device comprises, in the order of light propagation direction, a femtosecond laser amplifier, an electrically controlled shutter, a λ / 2 wave plate, a polarization cube beam splitter, a 4X beam expander, a beam shaping system, a scanning galvanometer system, a focusing mirror with a focal length of 20 cm, and a sample stage with a chamber.

[0028] The femtosecond laser amplifier is used to generate femtosecond laser pulses, with a wavelength of 800 nm and a pulse width of 30 fs.

[0029] The electrically controlled shutter is used to control the passing and cutting of the femtosecond laser pulses.

[0030] The λ / 2 wave plate and the polarization cube beam splitter are used to control the power and polarization state of the femtosecond laser pulses.

[0031] The 4X beam expander is used to expand the diameter of the femtosecond laser pulses.

[0032] The beam shaping system is used to shape the femtosecond laser pulses and achieve beam homogenization, ensuring that the energy distribution of the femtosecond laser pulses exiting the chromium-silicon-nickel-molybdenum metal film is uniform.

[0033] The scanning galvanometer system is used to regulate the beam direction of the femtosecond laser pulses, so that the femtosecond laser can irradiate the specified area of the chromium-silicon-nickel-molybdenum metal film.

[0034] The focusing mirror is used to focus the femtosecond laser to form a plasma channel in front of the chromium-silicon-nickel-molybdenum metal film.

[0035] Compared with the annealing disclosed in the prior art, the present application uses a femtosecond laser to form a plasma above the chromium-silicon-nickel-molybdenum metal film for annealing, and the annealing time is extremely short. In an embodiment, the annealing of a 4-inch wafer can be achieved in 10-30 min. In summary, the femtosecond laser plasma channel annealing technology provided by the present application can achieve annealing in a large area and in a very short time.

[0036] Further preferably, the plasma channel is located at a distance of 0.3-0.5 mm in front of the chromium-silicon-nickel-molybdenum metal film. Since the energy of the femtosecond laser is high, if it is directly focused on the surface of the chromium-silicon-nickel-molybdenum metal film, the surface can be directly burned out. By adjusting the distance between the plasma channel and the chromium-silicon-nickel-molybdenum metal film, the chromium-silicon-nickel-molybdenum metal film can be prevented from being burned out too much, and annealing can be achieved on a larger area of the chromium-silicon-nickel-molybdenum metal film.

[0037] Preferably, the femtosecond laser plasma channel annealing technology has a laser pulse energy of 1.5-2.0 mJ, a scanning speed of 20-50 mm / s, and a scanning interval of 200-250 um.

[0038] Preferably, a PI passivation layer is spin-coated on the chromium-silicon-nickel-molybdenum metal film after heat treatment, the solidification temperature is 350 DEG C, the developing solution is cyclopentanone, and the rinsing solution is propylene glycol methyl ether acetate.

[0039] Further preferably, the PI passivation layer has a thickness of 3-20 um.

[0040] Compared with the prior art, the present application has the following beneficial effects:

[0041] The present application adopts near-infrared light femtosecond laser to induce back patterning etching of chromium-silicon-nickel-molybdenum metal film, which can completely penetrate the silicon oxide wafer substrate. Since the etched chromium-silicon-nickel-molybdenum metal film is removed by sampling the back, the etched chromium-silicon-nickel-molybdenum metal film will not contaminate the unetched chromium-silicon-nickel-molybdenum metal film. Since the femtosecond laser induced back removal technology is adopted, the laser and the material interact in a very short time, which is much smaller than the time required for thermal diffusion, and will not affect the crystal lattice. The etching can be completed efficiently, the edge roughness of the resistance film is effectively reduced, and the precision and stability of the resistance are improved.

[0042] The present application adopts femtosecond laser plasma channel annealing technology to anneal the chromium-silicon-nickel-molybdenum metal film of S3. Based on the high energy density of the laser, the spot size and the spatial position are controllable, the sample local area can be uniformly heated in a very short time, the rapid annealing is realized, the annealing time is greatly shortened, and the production efficiency is improved. By adjusting the parameters of the femtosecond laser plasma channel annealing technology, the crystal lattice of the chromium-silicon-nickel-molybdenum metal film can be precisely controlled. The laser annealing process can greatly improve various structural defects in the resistance film, avoid the existence of structural defects to cause the change of conduction electron density and the scattering of carriers. In this way, the film is transformed from a metastable state to a stable state, the film performance tends to be stable, and the resistivity and temperature coefficient of the resistance film are improved.

[0043] Based on the doping of nickel and molybdenum metal, the present application can cause the electronic structure of the chromium-silicon film to change, the energy level to split, the band gap to narrow, the electronic structure to be more stable, the film stability to be better, and the resistance temperature coefficient of the chromium-silicon high resistance film to be reduced.

[0044] Compared with the traditional wet etching, photolithography, and thermal annealing processes, the preparation method provided by the present application avoids the use of a large amount of chemical reagents, simplifies the preparation process, improves the production efficiency, reduces the pollution to the environment and the operation risk, and has obvious advantages in process efficiency and cost control. BRIEF DESCRIPTION OF DRAWINGS

[0045] Figure 1 A CrSi resistance film preparation method flow chart is provided for the specific embodiment of the present application.

[0046] Figure 2 A near-infrared femtosecond laser-induced backside removal device structural block diagram is provided for the specific embodiment of the present application.

[0047] Figure 3 A femtosecond laser plasma channel annealing device structural block diagram is provided for the specific embodiment of the present application.

[0048] Figure 4 A CrSi resistance film resistance layout is provided for the specific embodiment of the present application.

[0049] Figure 5 A CrSi resistance film physical map is provided for the specific embodiment of the present application.

[0050] Figure 6 A CrSi resistance film resistance curve graph is provided for the specific embodiment of the present application. DETAILED DESCRIPTION

[0051] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0052] In order to solve the problem of poor stability and precision of the resistance film disclosed in the prior art, the specific embodiment of the present application adopts femtosecond laser-induced backside etching to select a region, so as to avoid the influence of etching residues on the unetched part. At the same time, the femtosecond laser-induced backside removal technology is adopted. Due to the extremely short pulse time, the interaction between the laser and the material is completed in a very short time, which is much smaller than the time required for heat diffusion, thereby avoiding the influence of heat on the film lattice, so that the roughness of the film edge is low. Moreover, the present application realizes efficient annealing of the film by using femtosecond laser, and can realize precise regulation of the crystal structure of the film by regulating the parameters of the femtosecond laser. The method provided by the present application avoids the use of a large amount of chemical reagents, simplifies the preparation process, and improves the production efficiency. It provides a process basis for the integrated application of chromium-silicon film resistance.

[0053] As shown in Figure 1 The present application provides a CrSi resistance film preparation method, which comprises:

[0054] S1, a chromium-silicon-nickel-molybdenum metal film is plated on a silicon oxide wafer substrate.

[0055] In a specific embodiment, the present application adopts magnetron sputtering to deposit a chromium-silicon-nickel-molybdenum metal film on a silicon oxide substrate, wherein the mass fractions of chromium, silicon, nickel, and molybdenum are 40%, 55%, 3%, and 2%, respectively; during the sputtering process, the flow ratio of argon and nitrogen is 300-500:1; and the prepared chromium-silicon-nickel-molybdenum alloy metal film has a thickness of 10-20 nm.

[0056] S2, the chromium-silicon-nickel-molybdenum metal film in the selected area on the back of the first device is removed by using a near-infrared femtosecond laser, and the specific steps are as follows:

[0057] In a specific embodiment, the present application adopts a first device to remove the chromium-silicon-nickel-molybdenum metal film in the selected area on the back of the first device, as shown in the figure, the first device comprises a femtosecond laser amplifier 1, an electrically controlled light shutter 2, a first λ / 2 wave plate 3, a polarizer 4, a 4X beam expander 5, a second λ / 2 wave plate 6, an optical parametric amplifier 7, a CCD 8, a dichroic mirror 9, a 10X microscope objective 10, and an x-y-z three-dimensional electrically controlled displacement platform 12. Figure 2 The femtosecond laser amplifier 1 provided in the embodiment outputs laser pulses with a wavelength of 800 nm and a pulse width of 30 fs. The laser pulses pass through the electrically controlled light shutter 2, the first λ / 2 wave plate 3, the polarizer 4, the 4X beam expander 5, the second λ / 2 wave plate 6, the optical parametric amplifier 7, the dichroic mirror 9, and the 10X microscope objective 10 in sequence, and are finally focused on the interface of the chromium-silicon-nickel-molybdenum alloy metal film 11.

[0058] In the embodiment, the electrically controlled light shutter 2 is used to control the passage and cutoff of the light path, the first λ / 2 wave plate 3 and the polarizer 4 are used to adjust the femtosecond laser single-pulse energy, and the obtained light beam polarization direction is vertical polarization. The optical parametric amplifier 7 is used to obtain a laser beam with a wavelength of 1064 nm to realize complete transmission through the silicon oxide substrate. The second λ / 2 wave plate 6 adjusts the light beam from vertical polarization to horizontal polarization. The dichroic mirror divides the light beam into two light beams. The laser beam is focused on the interface between the selected area of the silicon oxide substrate and the chromium-silicon-nickel-molybdenum metal film by the CCD and the 10X microscope objective to remove the chromium-silicon-nickel-molybdenum metal film in the selected area. During the processing, the laser pulse energy is set to 0.2-0.5 μJ, the scanning speed is set to 2-5 mm / s, and the scanning interval is set to 3 um.

[0059] S3, the present application forms an aluminum-copper alloy electrode on the chromium-silicon-nickel-molybdenum metal film.

[0060] In a specific embodiment, the magnetron sputtered aluminum-copper alloy electrode is prepared by using a hard mask plate, wherein the hard mask plate is prepared based on femtosecond laser filament ablation technology, and the thickness of the aluminum-copper alloy is 1.0-1.2 μm.

[0061] S4, heat treating the chromium-silicon-nickel-molybdenum metal film of step S3 using femtosecond laser plasma channel annealing technology, specifically the following steps:

[0062] The specific embodiment of the present invention uses the second device to heat treat the chromium silicon nickel molybdenum metal film in step S3, such as Figure 3 As shown, the second device includes a femtosecond laser amplifier 1, an electrically controlled optical shutter 2, a λ / 2 wave plate 3, a polarization cube beam splitter 4, a 4X beam expander 5, a beam shaping system 6, a scanning galvanometer system 7, a focusing mirror 8 with a focal length of 20 cm, and a sample stage with a chamber 10. The laser pulse output by the femtosecond laser amplifier 1 has a wavelength of 800 nm and a pulse width of 30 fs. The laser pulse passes through the electrically controlled optical shutter 2, the λ / 2 wave plate 3, the polarization cube beam splitter 4, the 4X beam expander 5, the beam shaping system 6, the scanning galvanometer system 7, and the focusing mirror 8 with a focal length of 20 cm, and is finally focused near the surface of a chromium-silicon-nickel-molybdenum metal film 9, forming a plasma channel. Through fine-tuning, the film surface is located 0.3 mm behind the plasma channel. The λ / 2 wave plate 3 and the polarization cube beam splitter 4 control the laser power and polarization state. The beam shaping system 6 is used to shape the initial beam and achieve beam homogenization to ensure uniform energy distribution of the outgoing laser. During the processing, the sample is kept in a nitrogen atmosphere. The laser pulse energy is set to 1.5-2.0mJ, the scanning speed is set to 5-40mm / s, and the scanning pitch is set to 100um.

[0063] S5. Patterning a PI passivation layer on the heat-treated chromium-silicon-nickel-molybdenum metal film.

[0064] In a specific embodiment, the thickness of the PI layer provided in this embodiment is 3-20 μm, the curing temperature is 350° C., the developing solution is cyclopentanone, and the rinsing solution is propylene glycol methyl ether acetate.

[0065] In a specific embodiment, this embodiment provides a method for preparing a CrSi resistor film, comprising:

[0066] Step 1: Place the silicon oxide wafer substrate material in the acetone organic tank and ethanol organic tank in an acid-base cleaning machine (Suzhou Xinsi Electronic Technology Co., Ltd.) for ultrasonic cleaning, then place it in a deionized water tank for rapid rinse to remove contaminants on the substrate surface, and finally place it in a vertical wafer spin dryer (Wuxi Quanyi Technology Co., Ltd.) for drying.

[0067] Step 2: After cleaning, the silicon oxide substrate is placed in the pre-evacuation chamber of the full-automatic magnetron sputtering film coating machine (Beijing Chuan Sheng Weina Technology Co., Ltd.). Argon gas is introduced into the pre-evacuation chamber for radio frequency cleaning of the device, with a time of 5 minutes, to further reduce surface impurity contamination. After radio frequency cleaning, the sample is transferred to the sputtering chamber by a mechanical hand. A combination of a mechanical pump and a molecular pump is used to evacuate the chamber to a base vacuum (8.0 x 10-4 Pa). Argon and nitrogen gases are introduced into the chamber, and the flow rates of argon and nitrogen are controlled by mass flow meters to achieve a ratio of 300-500:1. Chromium-silicon-nickel-molybdenum metal thin film is deposited by direct current magnetron sputtering technology.

[0068] Step 3: The chromium-silicon-nickel-molybdenum metal thin film is placed on the x-y-z three-dimensional electrically controlled displacement platform 12. Near-infrared femtosecond laser-induced backside removal of the chromium-silicon-nickel-molybdenum alloy metal thin film is performed. The laser spot is focused on the interface between the silicon oxide substrate and the chromium-silicon-nickel-molybdenum alloy metal thin film by adjusting the Z-axis platform and the coaxial CCD camera. The laser processing parameters are optimized. The removal of the chromium-silicon-nickel-molybdenum alloy metal thin film is achieved by programmed movement of the two-dimensional electrically controlled displacement platform. The processing process is monitored in real time by the coaxial CCD camera. During the processing, the laser pulse energy is set to 0.2-0.5 μJ, the scanning speed is set to 2-5 mm / s, and the scanning pitch is set to 3 um.

[0069] Step 4: The hard mask prepared by femtosecond laser filament ablation technology is placed on the surface of the sample prepared above. Patterned aluminum-copper alloy electrode deposition is performed by direct current magnetron sputtering technology. The thickness of the aluminum-copper alloy is 1.0-1.2 μm.

[0070] Step 5: The above sample is placed on a sample stage with a chamber. Nitrogen gas is used as the protective gas. Femtosecond laser plasma channel annealing is used to treat the chromium-silicon-nickel-molybdenum alloy metal thin film. The film surface is located 0.3 mm behind the plasma channel by fine tuning. The deflection of the lens in the scanning mirror system is controlled by programming Visual Studio to uniformly heat the local area of the sample, achieving rapid annealing. During the processing, the sample is ensured to be in a nitrogen atmosphere. The laser pulse energy is set to 1.5-2.0 mJ, the scanning speed is set to 20-50 mm / s, and the scanning pitch is set to 200-250 um.

[0071] Step 6: A PI passivation layer is spin-coated on the surface of the sample using a spin coater (Ningbo Runhua Full Core Microelectronics Equipment Co., Ltd.), with a rotation speed of 1500-4000 rpm / s. After spin coating, the sample is baked on a 110°C hot plate for 240s, exposed and developed, with an exposure dose of 100-300 mJ / cm2. The sample is then cured in a computer oxygen-free oven (Hefei Zhenping Electronics Technology Co., Ltd.), with a curing temperature of 350°C and an oxygen concentration of less than 100 ppm during the curing process. Polyimide (PI) is often used together with passivation layer material PAssivation (PA, usually a silicon-containing material) as a protective layer in semiconductor manufacturing due to its good electrical properties, chemical resistance, mechanical and thermal stability, in order to improve the reliability of the device.

[0072] As shown in Figure 4 and 5 , the resistance pattern and physical map of the CrSi resistive thin film prepared in this embodiment are shown.

[0073] Figure 6 The curve of the sheet resistance of the CrSi resistive thin film prepared in this embodiment with the change of the applied temperature is shown, with a resistivity better than 20 ppm / ℃.

Claims

1. A method for preparing a CrSi resistor film, characterized in that: include: S1, depositing a chromium-silicon-nickel-molybdenum metal film on a silicon oxide wafer substrate; S2, using near-infrared femtosecond laser to induce back removal of the Cr-Si-Ni-Mo metal film in the selected area; S3, forming an aluminum-copper alloy electrode on the chromium-silicon-nickel-molybdenum metal film; S4, heat treating the chromium-silicon-nickel-molybdenum metal film obtained in step S3 using a femtosecond laser plasma channel annealing technique; S5, patterning a PI passivation layer on the heat-treated chromium-silicon-nickel-molybdenum metal film; A chromium-silicon-nickel-molybdenum metal film was deposited on a silicon oxide wafer substrate by magnetron sputtering in an argon and nitrogen atmosphere. The mass fractions of chromium, silicon, nickel, and molybdenum are 40%, 55%, 3%, and 2%, respectively. During the magnetron sputtering process, the flow ratio of argon to nitrogen is 300-500:

1. The laser pulse energy induced by the near-infrared femtosecond laser is 0.2-0.5 μJ, the scanning speed is 2-5 mm / s, and the scanning spacing is 1-3 μm; Aluminum-copper alloy electrodes are prepared using a hard mask, where the hard mask is prepared based on femtosecond laser filament ablation technology, and the thickness of the aluminum-copper alloy is 1.0-1.2μm; Heat treating the chromium-silicon-nickel-molybdenum metal film obtained in step S3 by a second apparatus using a femtosecond laser plasma channel annealing technique, wherein the second apparatus includes a femtosecond laser amplifier, an electrically controlled optical shutter, a λ / 2 wave plate, a polarization cube beam splitter, a 4X beam expander, a beam shaping system, a scanning galvanometer system, a focusing mirror with a focal length of 20 cm, and a sample stage with a chamber, arranged in a light propagation direction; The femtosecond laser amplifier is used to generate femtosecond laser pulses with a laser pulse wavelength of 800nm ​​and a pulse width of 30fs; The electrically controlled shutter is used to control the passage and cutoff of femtosecond laser pulses; The λ / 2 wave plate and polarization cube beam splitter are used to control the power and polarization state of the femtosecond laser pulse; The 4X beam expander is used to expand the diameter of the femtosecond laser pulse; The beam shaping system is used to shape the femtosecond laser pulse and realize beam homogenization, so as to ensure that the energy distribution of the femtosecond laser pulse emitted to the chromium-silicon-nickel-molybdenum metal film is uniform; The scanning galvanometer system is used to control the beam direction of the femtosecond laser pulse so that the femtosecond laser can irradiate a designated area of ​​the chromium-silicon-nickel-molybdenum metal film; The focusing mirror is used to focus the femtosecond laser to form a plasma channel, and the plasma channel is located in front of the chromium-silicon-nickel-molybdenum metal film; The plasma channel is located 0.3-0.5 mm in front of the chromium-silicon-nickel-molybdenum metal film; The laser pulse energy of the femtosecond laser plasma channel annealing technology is 1.5-2.0 mJ, the scanning speed is 20-50 mm / s, and the scanning spacing is 200-250 μm.

2. The method for preparing a CrSi resistor film according to claim 1, wherein: A near-infrared femtosecond laser is used to induce back removal of a selected area of ​​a chromium-silicon-nickel-molybdenum metal film by a first device, wherein the first device includes a femtosecond laser amplifier, an electrically controlled optical shutter, a first λ / 2 wave plate, a polarizer, a 4X beam expander, a second λ / 2 wave plate, an optical parametric amplifier, a dichroic mirror, a CCD camera, a 10X microscope objective lens, and an xyz three-dimensional electrically controlled displacement stage arranged in a light propagation direction; The femtosecond laser amplifier is used to generate femtosecond laser pulses with a laser pulse wavelength of 800nm ​​and a pulse width of 30fs; The electrically controlled shutter is used to control the passage and cutoff of femtosecond laser pulses; The first λ / 2 wave plate and polarizer are used to adjust the energy of the femtosecond laser pulse, and the polarization direction of the obtained light beam is vertical polarization; The 4X beam expander is used to expand the beam diameter of the femtosecond laser pulse; The second λ / 2 wave plate is used to adjust the polarization direction of the femtosecond laser pulse from vertical polarization to horizontal polarization; The optical parametric amplifier is used to obtain a laser beam with a wavelength of 1064 nm; The dichroic mirror, CCD camera and 10x microscope objective lens are used to focus the laser beam on the interface between the silicon oxide substrate and the chromium silicon nickel molybdenum metal film in the selected area to remove the chromium silicon nickel molybdenum metal film in the selected area.

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