A human-computer interaction method for a resistor array infrared scene generating device

Abstract

The present application relates to the field of human-computer interaction technology, and specifically to a human-computer interaction method for a resistor array infrared scene generation device, the method comprising: determining the radiation anomaly factor of each resistor element based on the difference in radiation deviations corresponding to each adjacent mutation point of each resistor element, and the difference in the acquisition time of each adjacent mutation point, combined with the discrete degree of the acquisition time of all mutation points; determining the mutual interference index of each resistor element according to the difference in radiation deviation and time between all normal resistor elements and all suspected abnormal resistor elements in the window of each resistor element, so as to monitor the operating status of the resistor array. Based on the accurate evaluation of the operating status of the resistor array in the infrared scene generation device, the present application improves the accuracy of the monitoring of the infrared radiation results of the resistor element by relevant personnel and the efficiency of timely handling of the abnormal status of the resistor array.

Description

Technical Field

[0001] The present application relates to the technical field of human-computer interaction, and in particular to a human-computer interaction method for a resistor array infrared scene generating device. Background Art

[0002] As a high-tech device developed based on microelectronics and micromachining technology, the resistor array infrared scene generation device is mainly used in infrared imaging guidance semi-physical simulation test systems. The resistor array uses resistor elements as non-radiating elements. When current passes through, the resistor elements generate heat, thereby forming radiation. By controlling the current passing through each resistor element, the temperature of each resistor can be controlled, thereby realizing the display of infrared images. Compared with other infrared scene generators, the resistor array has the advantages of low power consumption, large temperature range and high resolution.

[0003] Although the resistor array can accurately control the temperature of each resistor element, it is still a challenge to maintain this level of precise control during the rapid movement of the simulated target. The operating status of the resistor array can be obtained in a timely manner through human-computer interaction, providing auxiliary basis for subsequent adjustments and repairs of the resistor array by relevant personnel. However, the infrared radiation intensity of the resistor elements in the resistor array may be abnormal due to faults, and thermal crosstalk may also occur between adjacent resistor elements, that is, the infrared radiation of resistor elements in the adjacent range affects each other, resulting in inaccurate monitoring results, thereby affecting the accurate assessment of the operating status of the resistor array and reducing the timeliness of relevant personnel in handling abnormal conditions of the resistor array. Summary of the invention

[0004] In order to solve the above technical problems, the present application provides a human-computer interaction method for a resistor array infrared scene generating device to solve the existing problems.

[0005] A human-computer interaction method of a resistor array infrared scene generation device of the present application adopts the following technical solution:

[0006] An embodiment of the present application provides a human-computer interaction method for a resistor array infrared scene generating device, the method comprising the following steps:

[0007] Obtain the infrared radiation intensity of each resistor element in the resistor array at all acquisition times;

[0008] The ratio of the infrared radiation intensity of each resistor element at each acquisition moment to the infrared radiation intensity at the next acquisition moment is recorded as the radiation deviation of each resistor element;

[0009] Obtain all mutation points in all radiation deviations of each resistor element, determine the radiation anomaly factor of each resistor element based on the difference in radiation deviations corresponding to adjacent mutation points of each resistor element and the difference in acquisition time of adjacent mutation points, combined with the discrete degree of acquisition time of all mutation points;

[0010] The radiation anomaly factors of all resistor elements in the resistor array are used as the input of the threshold segmentation algorithm to obtain the segmentation threshold. The resistor elements whose radiation anomaly factors are greater than or equal to the segmentation threshold are recorded as suspected resistor elements, and the rest are normal resistor elements.

[0011] A window is constructed with each resistor element as the center. The mutual interference index of each resistor element is determined based on the difference in radiation deviation and time between all normal resistor elements and all suspected abnormal resistor elements in the window of each resistor element to monitor the operating status of the resistor array.

[0012] Preferably, the method for determining the radiation anomaly factor of each resistor element is:

[0013] Determine the first radiation anomaly factor of each resistor element based on the difference in radiation deviations corresponding to adjacent mutation points of each resistor element and the difference in acquisition time of adjacent mutation points;

[0014] Based on the difference in the acquisition time of each adjacent mutation point of each resistor element and the discrete degree of the acquisition time of all mutation points, the second radiation anomaly factor of each resistor element is determined;

[0015] Based on the first radiation abnormality factor and the second radiation abnormality factor, a radiation abnormality factor of each resistor element is determined.

[0016] Preferably, the method for determining the first radiation anomaly factor of each resistor element is:

[0017] Analyze the change rate of the radiation deviation corresponding to each mutation point of each resistor element and the radiation deviation corresponding to the previous mutation point;

[0018] The first radiation anomaly factor of each resistor element is negatively correlated with the change rate of all mutation points of each resistor element.

[0019] Preferably, the method for determining the second radiation anomaly factor of each resistor element is:

[0020] Analyze the cumulative sum of the differences between the acquisition time of each mutation point of each resistor element and the acquisition time of its adjacent mutation point, and record it as the first difference sum value of each mutation point of each resistor element;

[0021] The second radiation anomaly factor of each resistor element is a result of the fusion of the first difference sum of all adjacent mutation points of each resistor element and the discrete degree of the acquisition time of all mutation points.

[0022] Preferably, the expression of the radiation anomaly factor of each resistor element is: ; In the formula, represents the radiation anomaly factor of the i-th resistor element; represents the first radiation anomaly factor of the i-th resistor element; Represents the second radiation anomaly factor of the i-th resistor element.

[0023] Preferably, the mutual interference index of each resistor element is determined by:

[0024] Determine the time difference radiation difference of each resistor element according to the difference in radiation deviation between all normal resistor elements and all suspected abnormal resistor elements within the window of each resistor element;

[0025] Determine the time difference of each resistor element according to the time difference between all normal resistor elements and all suspected abnormal resistor elements in the window of each resistor element;

[0026] Based on the time difference radiation difference and the time difference, a mutual interference index of each resistor element is determined.

[0027] Preferably, the method for determining the time difference radiation difference of each resistor element is:

[0028] All radiation deviations of each resistor element constitute a radiation deviation sequence of each resistor element;

[0029] Analyze the cumulative sum of the differences between the radiation deviation sequence of any normal resistor element and the radiation deviation sequence of any suspected abnormal resistor element within the window of each resistor element, and record it as a second difference sum value of each resistor element;

[0030] The time difference radiation difference of each resistor element is negatively correlated with the second difference and value of each resistor element.

[0031] Preferably, the method for determining the time difference of each resistor element is:

[0032] The acquisition moments corresponding to all mutation points of each resistor element constitute a mutation moment sequence of each resistor element;

[0033] The time difference of each resistor element is the result of the distance fusion of the mutation time sequence of all normal resistor elements and the mutation time sequence of all suspected abnormal resistor elements within the window of each resistor element.

[0034] Preferably, the expression of the mutual interference index of each resistor element is: ; In the formula, represents the mutual interference index of the i-th resistor element; It represents the time difference radiation difference of the i-th resistor element; represents the time difference of the i-th resistor element; Indicates a preset constant greater than 0.

[0035] Preferably, the monitoring of the operating status of the resistor array includes:

[0036] When the average value of the mutual interference index of all resistor elements in the resistor array is less than or equal to the first preset threshold value, the operation state of the resistor array is stable. Otherwise, the operation state of the resistor array is abnormal and is reported to the supervisor.

[0037] This application has at least the following beneficial effects:

[0038] This application analyzes the difference characteristics of the infrared radiation intensity change of the resistor element and the duration characteristics of the change time. Based on the difference in radiation deviations corresponding to adjacent mutation points of each resistor element and the difference in collection time of each adjacent mutation point, combined with the discrete degree of collection time of all mutation points, the radiation anomaly factor of each resistor element is determined, and a comprehensive and quantitative evaluation is made of the possibility of the cause of the change in the infrared radiation intensity of the resistor element. Based on this, normal resistor elements and suspected abnormal resistor elements within the neighborhood are obtained.

[0039] The present application determines the mutual interference index of each resistor element by analyzing the differences in radiation deviation and time between all normal resistor elements and all suspected abnormal resistor elements in the window of each resistor element, so as to judge whether the resistor element is affected by the thermal crosstalk brought by the adjacent abnormal resistor element. The operating status of the resistor array in the infrared scene generating device is monitored according to the mutual interference index, so as to more accurately obtain the degree of influence of thermal crosstalk on the resistor elements in the neighborhood range.

[0040] Based on the accurate evaluation of the operating status of the resistor array in the infrared scene generating device, the present application realizes the human-computer interaction of the resistor array infrared scene generating device, improves the accuracy of the relevant personnel's monitoring of the infrared radiation results of the resistor elements and the efficiency of timely handling of abnormal states of the resistor array, and provides a strong basis for human-computer interaction. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the technical solutions and advantages in the embodiments of the present application or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0042] Figure 1 A flowchart of the steps of a human-computer interaction method for a resistor array infrared scene generating device provided in the present application;

[0043] Figure 2A schematic diagram of the mutual interference index extraction process provided for this application;

[0044] Figure 3 Abnormal resistance element definition flow chart provided for this application;

[0045] Figure 4 Schematic diagram of the resistance element abnormality monitoring process provided in this application. DETAILED DESCRIPTION

[0046] In order to further explain the technical means and effects adopted by the present application to achieve the predetermined invention purpose, the following is a detailed description of the human-computer interaction method of a resistor array infrared scene generation device proposed by the present application, its specific implementation method, structure, features and effects, in combination with the accompanying drawings and preferred embodiments. In the following description, different "one embodiment" or "another embodiment" does not necessarily refer to the same embodiment. In addition, specific features, structures or characteristics in one or more embodiments may be combined in any suitable form.

[0047] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0048] The specific scheme of the human-computer interaction method of the resistor array infrared scene generating device provided by the present application is described in detail below with reference to the accompanying drawings.

[0049] An embodiment of the present application provides a human-computer interaction method for a resistor array infrared scene generation device. Specifically, the following human-computer interaction method for a resistor array infrared scene generation device is provided. Figure 1 , the method comprises the following steps:

[0050] Step S1: Obtain the infrared radiation intensity of each resistor element in the resistor array at all acquisition moments.

[0051] In the present application, an infrared radiometer is used to obtain the infrared radiation intensity of each resistor element in the resistor array in the infrared scene generation device at all acquisition moments within a preset time length t, and the time interval for the infrared radiometer to collect data is T.

[0052] It should be noted that the values ​​of the time interval T and the preset duration t are both manually set. In this embodiment, the value of the time interval T is 0.5s, and the value of the preset duration t is 5min. The implementer can also set them according to the specific situation.

[0053] Furthermore, in order to prevent the infrared radiation intensity data of the resistor element from being missing due to network fluctuations or external interference, a data filling method is used to fill in the time-series-based infrared radiation intensity data and the retrograde missing values ​​of each resistor element.

[0054] It should be understood that there are many commonly used data filling methods. In this embodiment, the median filling method is used to fill the missing values. The implementer may also use other filling methods such as the mode filling method. This embodiment does not impose any special restrictions.

[0055] Among them, the median filling method is a well-known technology, and the specific process of filling missing values ​​is not repeated here.

[0056] Step S2: determining the first radiation anomaly factor of each resistor element based on the difference in radiation deviations corresponding to adjacent mutation points of each resistor element and the difference in acquisition time of adjacent mutation points.

[0057] The resistor array infrared scene generation device controls the current of each resistor element in the resistor array, thereby controlling the temperature of each resistor element in the resistor array, thereby affecting the infrared radiation intensity generated by each resistor element, and each resistor element corresponds to a pixel in the final infrared scene. When the target in the simulated scene moves quickly or changes its posture, the infrared radiation intensity of the corresponding resistor element will also change rapidly; and abnormal conditions such as unstable power supply voltage or current of the resistor element, failure of the heat dissipation system, and aging and fatigue of the resistor element will cause abnormal fluctuations in the infrared radiation intensity of the resistor element.

[0058] Ideally, when the intensity of the infrared radiation of the resistor changes dramatically due to rapid movement or posture change of the simulated target, the characteristic of the infrared radiation intensity of the resistor changing dramatically in a short period of time is more significant.

[0059] The ratio of the infrared radiation intensity of each resistor element at each acquisition moment to the infrared radiation intensity at the next acquisition moment is recorded as the radiation deviation of each resistor element.

[0060] For the last acquisition moment of each resistor element, the ratio of the infrared radiation intensity of each resistor element at the last acquisition moment to the infrared intensity at the previous acquisition moment is taken as the radiation deviation of each resistor element at the last acquisition moment.

[0061] All radiation deviations of each resistor element are used as inputs of a mutation point detection algorithm to obtain all mutation points in all radiation deviations of each resistor element.

[0062] It should be noted that there are many commonly used mutation point detection algorithms. In this embodiment, the BG sequence segmentation algorithm is used to detect mutation data in all radiation deviations. The implementer can also use the Pettitt test algorithm to obtain mutation points in the data according to specific circumstances. This embodiment does not impose any special restrictions.

[0063] Among them, the BG sequence segmentation algorithm is a well-known technology, and the specific process of extracting mutation points is not repeated here.

[0064] Since it is crucial to accurately simulate the thermal radiation characteristics of the target in the simulated infrared scene generation device, any inaccurate radiation caused by abnormal conditions of the resistor element must be corrected.

[0065] Therefore, based on the difference in radiation deviations corresponding to adjacent mutation points of each resistor element and the difference in the acquisition time of adjacent mutation points, the first radiation anomaly factor of each resistor element is determined to distinguish normal changes and abnormal changes of the resistor element, so as to determine whether the radiation change of the resistor element is caused by abnormal fluctuations in radiation deviations due to actual movement or posture changes of the simulated target, or abnormal fluctuations in data due to equipment failure or aging, thereby improving the authenticity of the simulation scene, specifically:

[0066] Analyze the change rate of the radiation deviation corresponding to each mutation point of each resistor element and the radiation deviation corresponding to the previous mutation point;

[0067] The first radiation anomaly factor of each resistor element is negatively correlated with the change rate of all mutation points of each resistor element.

[0068] It should be understood that a negative correlation means that the two variables change in opposite directions. When one variable changes from large to small, the other variable changes from small to large. One variable decreases as the other variable increases, and increases as the other variable decreases.

[0069] Preferably, in the present embodiment, the first radiation anomaly factor of each resistor element is an exponential function value with a natural constant as the base and the inverse of the sum of the change rates of all mutation points of each resistor element as the independent variable; in actual application, as other implementation methods, the first radiation anomaly factor of each resistor element is the reciprocal of the sum of the change rates of all mutation points of each resistor element.

[0070] Under normal circumstances, if the infrared radiation intensity of the resistor element is caused by the rapid movement or posture change of the simulated target, then in a short period of time, the infrared radiation intensity of the resistor element should show a significant and drastic change. At this time, the smaller the first radiation anomaly factor of the resistor element, that is, the greater the rate of change of the radiation deviation of the mutation point of the resistor element; conversely, if the change in the infrared radiation intensity of the resistor element is caused by abnormal conditions, such as instability of the power supply voltage or current, failure of the cooling system, etc., then the change in the infrared radiation intensity in a short period of time will not be particularly significant, that is, the smaller the rate of change of the radiation deviation of the mutation point of the resistor element, the greater the first radiation anomaly factor of the resistor element.

[0071] Step S3: Determine the second radiation anomaly factor of each resistor element based on the difference in acquisition time of each adjacent mutation point of each resistor element and the discrete degree of acquisition time of all mutation points.

[0072] Ideally, when the change in the infrared radiation intensity of the resistor element is caused by the rapid movement or posture change of the simulated target, the change in the radiation intensity of the resistor element lasts for a short time and the change time is more concentrated. On the contrary, when the change in the infrared radiation intensity of the resistor element is an abnormal change caused by the abnormal condition of the equipment, the change in the radiation intensity of the resistor element lasts for a long time and the change time is more discrete.

[0073] Therefore, by analyzing the difference in the acquisition time of each adjacent mutation point of each resistor element and the discrete degree of the acquisition time of all mutation points, the second radiation anomaly factor of each resistor element is determined to more accurately identify whether the change in the infrared radiation intensity of the resistor element is a normal change caused by the rapid movement or posture change of the simulated target, or an abnormal change caused by the abnormal condition of the equipment, specifically:

[0074] Analyze the discrete degree of the acquisition time of all mutation points of each resistor element;

[0075] It should be noted that there are many methods for measuring the degree of discreteness of a set of data. In this embodiment, the interquartile range of the acquisition time of all mutation points of each resistor element is obtained to measure the degree of discreteness of the distribution of the acquisition time of the mutation point. The implementer may also use other methods such as variance and standard deviation to measure the degree of discreteness, and this embodiment does not impose any special restrictions.

[0076] The calculation process of the interquartile range is a well-known technique, and the specific calculation process will not be described in detail.

[0077] Further, the cumulative sum of the differences between the acquisition time of each mutation point of each resistor element and the acquisition time of its adjacent mutation point is analyzed and recorded as the first difference sum value of each mutation point of each resistor element; wherein the adjacent mutation points of each mutation point include the two adjacent mutation points before and after it.

[0078] It should be understood that there are many ways to measure the difference. In this embodiment, the absolute value of the difference between the acquisition times of adjacent mutation points of each resistor element is taken to measure the difference between the acquisition times of adjacent mutation points. The implementer can also use other methods that can measure the difference, such as ratio, according to the specific situation. This embodiment does not impose any special restrictions.

[0079] Furthermore, the second radiation anomaly factor of each resistor element is a result of the fusion of the first difference sum value of all adjacent mutation points of each resistor element and the discrete degree of the acquisition time of all mutation points.

[0080] It should be understood that fusion refers to combining two or more indicators by adding or multiplying them together in order to obtain a comprehensive indicator, thereby more comprehensively and accurately evaluating a phenomenon or problem. This fusion method is not limited to simple arithmetic operations, but can also include more complex statistical models and analysis methods. The implementer can choose according to the specific situation, and this embodiment does not impose any special restrictions.

[0081] Preferably, in the present embodiment, the second radiation anomaly factor of each resistor element is constructed as follows: the second radiation anomaly factor of each resistor element is the product of the sum of the first difference values ​​of all adjacent mutation points of each resistor element and the discreteness of the acquisition time of all mutation points. In the actual application process, as another embodiment, the second radiation anomaly factor of each resistor element is an exponential function value with a natural constant as the base and the sum of the sum of the first difference values ​​of all adjacent mutation points of each resistor element and the discreteness of the acquisition time of all mutation points as the independent variable.

[0082] When the infrared radiation intensity of the resistor element is more likely to be caused by an abnormal condition rather than by the rapid movement or posture change of the simulated target, the discreteness of the infrared radiation intensity change moment of the resistor element is stronger, the time interval of the infrared radiation intensity change moment of the resistor element is longer, and the second radiation abnormality factor is more significant, that is, the discreteness of the collection moments corresponding to all mutation points in the resistor element is greater, and the cumulative result of the differences between the collection moments of adjacent mutation points of the resistor element is greater, that is, the first difference sum value is greater.

[0083] On the contrary, when the change in the infrared radiation intensity of the resistor element is more likely to be caused by the rapid movement or posture change of the simulated target, the shorter the time interval of the resistor element radiation intensity change, and the more concentrated the collection time distribution of the mutation points, the smaller the second radiation anomaly factor, that is, the smaller the discrete degree of the collection time corresponding to all mutation points in the resistor element, the smaller the difference between the collection times of adjacent mutation points of the resistor element, that is, the smaller the first difference and value.

[0084] The first radiation anomaly factor and the second radiation factor respectively reflect the change amplitude and time characteristics of the radiation intensity. In order to more comprehensively evaluate whether the change of the infrared radiation intensity of the resistor element is abnormal, a single indicator cannot fully reflect the radiation anomaly of the resistor element. Therefore, based on the first radiation anomaly factor and the second radiation anomaly factor, the radiation anomaly factor of each resistor element is determined to improve the comprehensiveness and accuracy of anomaly detection, specifically:

[0085] The expression of the radiation anomaly factor of each resistor element is: ; In the formula, represents the radiation anomaly factor of the i-th resistor element; represents the first radiation anomaly factor of the i-th resistor element; Represents the second radiation anomaly factor of the i-th resistor element.

[0086] When the change in the infrared radiation intensity of the resistor element is more likely to be caused by an abnormal condition rather than by the rapid movement or posture change of the simulated target, the difference between the change conditions of the infrared radiation intensity of the resistor element is more blurred, the time interval for the change in the infrared radiation intensity of the resistor element is shorter and the change time concentration is stronger, that is, the larger the first radiation anomaly factor, the larger the second radiation anomaly factor; conversely, if the change in the infrared radiation intensity of the resistor element is caused by the rapid movement or posture change of the simulated target, the smaller the first radiation anomaly factor of the resistor element, the smaller the second radiation anomaly factor, and the larger the radiation anomaly factor.

[0087] Step S4: determining the time difference radiation difference of each resistor element based on the difference in radiation deviation between all normal resistor elements and all suspected abnormal resistor elements within the window of each resistor element.

[0088] When the simulated target moves quickly or changes its posture, causing the normal change in the infrared radiation intensity of the resistor element, if the abnormality of the resistor element causes the abnormal change in the infrared radiation intensity of its adjacent resistor element, the more inaccurate the monitoring results of the operating status of the resistor array of the infrared scene generating device will be, the more necessary it will be to adjust the current passing through the resistor element or replace the resistor element as soon as possible through human-computer interaction.

[0089] The radiation anomaly factors of all resistor elements are used as the input of the threshold segmentation algorithm to obtain the segmentation threshold. The resistor elements with radiation anomaly factors greater than or equal to the segmentation threshold are recorded as suspected abnormal resistor elements; the resistor elements with radiation anomaly factors less than the segmentation threshold are recorded as normal resistor elements.

[0090] Generally speaking, the greater the difference in radiation deviation between a resistor element with normal changes in infrared radiation intensity within a neighborhood range and a resistor element with abnormal changes in infrared radiation intensity within a neighborhood range, the milder the thermal crosstalk condition suffered by the normal resistor element within the neighborhood range, and the more accurate the operation monitoring results of each resistor element in the resistor array within the neighborhood range.

[0091] Therefore, each resistor element is constructed as the center The value of n is manually set. In this embodiment, the value of n is 5. The implementer can also set it by himself. This embodiment does not impose any special restrictions.

[0092] Furthermore, based on the difference in radiation deviation between all normal resistor elements and all suspected abnormal resistor elements within the window of each resistor element, the time difference radiation difference of each resistor element is determined to evaluate the influence of thermal crosstalk on the normal operation of the resistor element, specifically:

[0093] All radiation deviations of each resistor element constitute a radiation deviation sequence of each resistor element;

[0094] Analyze the cumulative sum of the differences between the radiation deviation sequence of any normal resistor element and the radiation deviation sequence of any suspected abnormal resistor element within the window of each resistor element, and record it as a second difference sum value of each resistor element;

[0095] It should be noted that there are many methods for measuring the difference between two sequences. In this embodiment, the difference between the radiation deviation sequences is measured by calculating the JS divergence between the radiation deviation sequences. The implementer may also use other methods that can measure the difference, such as Euclidean distance and Manhattan distance, and this embodiment does not impose any special restrictions.

[0096] The calculation process of JS divergence is a well-known technology, and its specific calculation process will not be repeated here.

[0097] The time difference radiation difference of each resistor element is negatively correlated with the second difference and value of each resistor element.

[0098] Preferably, in the present embodiment, the time difference radiation difference of each resistor element is the inverse of the sum of the second difference value of each resistor element and a preset value; in actual application, as other implementation methods, the time difference radiation difference of each resistor element is an exponential function value with a natural constant as the base and the opposite of the second difference value of each resistor element as the independent variable.

[0099] When the monitoring results of the operation of the resistor element are more accurate, the degree of thermal crosstalk between the resistor element with normal changes in infrared radiation intensity and the resistor element with abnormal changes in infrared radiation intensity in the neighboring range will be less severe, and the time difference radiation difference will be smaller, that is, the cumulative result of JS divergence of all normal resistor elements and suspected abnormal resistor elements in the radiation window will be smaller; conversely, if the error of the monitoring results of the operation of the resistor element is greater, the degree of thermal crosstalk between the resistor element with normal changes in infrared radiation intensity and the resistor element with abnormal changes in infrared radiation intensity in the neighboring range will be more severe, and the time difference radiation difference will be larger, that is, the cumulative result of JS divergence of all normal resistor elements and suspected abnormal resistor elements in the radiation window will be larger.

[0100] Step S5: Determine the mutual interference index of each resistor element according to the time difference between all normal resistor elements and all suspected abnormal resistor elements in the window of each resistor element and the radiation difference of the time difference.

[0101] The significance of the thermal crosstalk phenomenon is judged only based on the radiation deviation conditions of the resistor elements with normal changes in infrared radiation intensity and the resistor elements with abnormal changes in infrared radiation intensity within the neighborhood range, without considering the time characteristics of the thermal crosstalk generated by adjacent resistor elements. If the difference in the time of change of the infrared radiation intensity of the resistor elements with normal changes in infrared radiation intensity and the resistor elements with abnormal changes in infrared radiation intensity within the neighborhood range is smaller, the change of the infrared radiation intensity of the normal resistor elements within the neighborhood range is more likely to be interfered by the thermal crosstalk phenomenon, and the operation monitoring results of each resistor element of the resistor array within the neighborhood range will be less accurate.

[0102] Therefore, by analyzing the time difference between all normal resistors and all suspected abnormal resistors in the window of each resistor, the time difference of each resistor is determined to identify whether the resistor is affected by the abnormality of the adjacent resistor, and adjust or replace the abnormal resistor, specifically:

[0103] The acquisition moments corresponding to all mutation points of each resistor element constitute a mutation moment sequence of each resistor element;

[0104] The time difference of each resistor element is the result of the distance fusion of the mutation time sequence of all normal resistor elements and the mutation time sequence of all suspected abnormal resistor elements within the window of each resistor element.

[0105] It should be noted that there are many methods for measuring the distance between two sequences. In this embodiment, the DTW distance is used to measure the difference between the mutation time sequence of the normal resistor element and the mutation time sequence of the suspected abnormal resistor element. The implementer may also use other distance measurement methods such as Euclidean distance and Manhattan distance, and this embodiment does not impose any special restrictions.

[0106] The calculation process of the dtw distance is a well-known technique, and the specific calculation process will not be described in detail.

[0107] Preferably, in the present embodiment, the time difference of each resistor element is the cumulative sum of the distances between the mutation moment sequences of all normal resistor elements and the mutation moment sequences of all suspected abnormal resistor elements within the window of each resistor element; in actual application, as other implementation methods, the time difference of each resistor element is an exponential function value with a natural constant as the base and the sum of the distances between the mutation moment sequences of all normal resistor elements and the mutation moment sequences of all suspected abnormal resistor elements within the window of each resistor element as the independent variable.

[0108] When the monitoring results of the operation of the resistor element are more accurate, the thermal crosstalk of the resistor element with normal changes in infrared radiation intensity by the resistor element with abnormal changes in infrared radiation intensity in the neighborhood range is more severe, the difference between the infrared radiation intensity change times of the normal resistor element and the suspected abnormal resistor element is greater, and the time difference is greater, that is, the distance between the corresponding mutation time series of all normal resistor elements and the suspected abnormal resistor element in the radiation window is greater; conversely, when the monitoring results of the operation of the resistor element are more accurate, the thermal crosstalk of the resistor element with normal changes in infrared radiation intensity by the resistor element with abnormal changes in infrared radiation intensity in the neighborhood range is more severe, the difference between the infrared radiation intensity change times of the normal resistor element and the suspected abnormal resistor element is smaller, and the time difference is greater, that is, the distance between the corresponding mutation time series of all normal resistor elements and the suspected abnormal resistor element in the radiation window is smaller.

[0109] Further, based on the time difference radiation difference and the time difference, the mutual interference index of each resistor element is determined to determine whether the resistor element is affected by the thermal crosstalk caused by the adjacent abnormal resistor element. Specifically:

[0110] The expression of the mutual interference index of each resistor element is: ; In the formula, represents the mutual interference index of the i-th resistor element; represents the time difference of the i-th resistor element; represents the time difference of the i-th resistor element; Indicates a preset constant greater than 0.

[0111] It should be noted that The value is set manually. In this embodiment, The value is 0.01. The implementer may also set it according to the specific situation, provided that the denominator in the expression of the mutual interference index of each resistor element is not 0 and does not affect the calculation result of the mutual interference index too much. This embodiment does not impose any special restrictions.

[0112] The more accurate the operation monitoring results of the resistor element within the infrared radiation collection interval are, the less affected the resistor element at the position where the simulated target moves quickly or changes its posture is by the thermal crosstalk of the resistor element with abnormal changes in infrared radiation intensity in the neighborhood, the less the degree of change in the infrared radiation intensity of the normal resistor element due to thermal crosstalk, and the greater the difference between the corresponding change times of the normal resistor element and the resistor element with abnormal changes in infrared radiation intensity; that is, the smaller the mutual interference index, the smaller the time difference radiation difference, and the greater the time difference.

[0113] Preferably, the schematic diagram of the mutual interference index extraction process provided in the present application is as follows: Figure 2 shown.

[0114] Step S6: Based on the mutual interference index of each resistor element, the operating state of the resistor array is monitored.

[0115] A first preset threshold and a second preset threshold are set, and when the average value of the mutual interference index of all resistor elements in the resistor array is less than or equal to the first preset threshold, the resistor array state is stable;

[0116] When the average value of the mutual interference index of all resistor elements in the resistor array is greater than the first preset threshold value and less than the second preset threshold value, the operation state of the resistor array is slightly abnormal, and the infrared radiation detection result is interfered by the slight abnormal condition, but the adjacent resistor elements are not seriously affected by the thermal crosstalk. At this time, the infrared scene generation device sends a slight abnormal state information to the supervisor;

[0117] When the average value of the mutual interference index of all resistor elements in the resistor array is greater than or equal to the second preset threshold value, the operating state of the resistor array is unstable, the infrared radiation monitoring results have been seriously interfered by the abnormal conditions of the resistor elements, and the infrared radiation changes of adjacent resistor elements are seriously affected by thermal crosstalk. At this time, the infrared scene generation device sends a serious abnormal state information to the supervisor, cuts off the power supply of the resistor array in the infrared scene generation device, and stops the passage of current in the resistor elements.

[0118] It should be noted that the values ​​of the first preset threshold and the second preset threshold are set manually. In this embodiment, the value of the first preset threshold is 0.4, and the value of the second preset threshold is 0.7. The first preset threshold is always smaller than the second preset threshold. The implementer can set it according to the specific situation. This embodiment does not impose any special restrictions.

[0119] If relevant personnel receive slight abnormal status information sent by the infrared scene generating device, they can choose to send instructions to the infrared scene generating device to obtain the position information of the resistor element in the slight abnormal state, and timely adjust the current passing through the resistor element to correct the infrared radiation intensity of the resistor element (the specific correction principle is: ensure that all resistor elements produce consistent infrared radiation intensity under the same current).

[0120] If relevant personnel receive serious abnormal status information sent by the infrared scene generation device, they need to repair or replace all resistor elements with mutual interference index greater than or equal to the second preset threshold to avoid further damage to the resistor array and generation of erroneous infrared scenes.

[0121] Preferably, the abnormal resistance element definition flow chart provided in the present application is as follows: Figure 3 shown.

[0122] Preferably, the schematic diagram of the resistance element abnormality monitoring process provided by the present application is as follows: Figure 4 shown.

[0123] It should be noted that the above sequence of the embodiments of the present application is for description only and does not represent the advantages and disadvantages of the embodiments. The above is a description of a specific embodiment of this specification. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0124] The various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referenced to each other, and each embodiment focuses on the differences from other embodiments.

[0125] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Modifications to the technical solutions recorded in the aforementioned embodiments, or equivalent replacement of some of the technical features therein, do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A human-computer interaction method for a resistor array infrared scene generating device, characterized in that: The method comprises the following steps: Obtain the infrared radiation intensity of each resistor element in the resistor array at all acquisition times; The ratio of the infrared radiation intensity of each resistor element at each acquisition moment to the infrared radiation intensity at the next acquisition moment is recorded as the radiation deviation of each resistor element; Obtain all mutation points in all radiation deviations of each resistor element, determine the radiation anomaly factor of each resistor element based on the difference in radiation deviations corresponding to adjacent mutation points of each resistor element and the difference in acquisition time of adjacent mutation points, combined with the discrete degree of acquisition time of all mutation points; The radiation anomaly factors of all resistor elements in the resistor array are used as the input of the threshold segmentation algorithm to obtain the segmentation threshold. The resistor elements with radiation anomaly factors greater than or equal to the segmentation threshold are recorded as suspected resistor elements, and the rest are normal resistor elements. A window is constructed with each resistor element as the center, and the mutual interference index of each resistor element is determined according to the difference in radiation deviation between all normal resistor elements and all suspected abnormal resistor elements in the window of each resistor element, as well as the difference in time, so as to monitor the operating status of the resistor array; The method for determining the radiation anomaly factor of each resistor element is: Determine the first radiation anomaly factor of each resistor element based on the difference in radiation deviations corresponding to adjacent mutation points of each resistor element and the difference in acquisition time of adjacent mutation points; Based on the difference in the acquisition time of each adjacent mutation point of each resistor element and the discrete degree of the acquisition time of all mutation points, the second radiation anomaly factor of each resistor element is determined; Determining a radiation anomaly factor of each resistor element based on the first radiation anomaly factor and the second radiation anomaly factor; The method for determining the first radiation anomaly factor of each resistor element is: Analyze the change rate of the radiation deviation corresponding to each mutation point of each resistor element and the radiation deviation corresponding to the previous mutation point; The first radiation anomaly factor of each resistor element is negatively correlated with the change rate of all mutation points of each resistor element; The method for determining the second radiation anomaly factor of each resistor element is: Analyze the cumulative sum of the differences between the acquisition time of each mutation point of each resistor element and the acquisition time of its adjacent mutation point, and record it as the first difference sum value of each mutation point of each resistor element; The second radiation anomaly factor of each resistor element is the result of the fusion of the first difference and value of all adjacent mutation points of each resistor element and the discrete degree of the acquisition time of all mutation points; The method for determining the mutual interference index of each resistor element is: Determine the time difference radiation difference of each resistor element according to the difference in radiation deviation between all normal resistor elements and all suspected abnormal resistor elements within the window of each resistor element; Determine the time difference of each resistor element according to the time difference between all normal resistor elements and all suspected abnormal resistor elements in the window of each resistor element; Determining a mutual interference index of each resistor element based on the time difference radiation difference and the time difference; The method for determining the time difference radiation difference of each resistor element is: All radiation deviations of each resistor element constitute a radiation deviation sequence of each resistor element; Analyze the cumulative sum of the differences between the radiation deviation sequence of any normal resistor element and the radiation deviation sequence of any suspected abnormal resistor element within the window of each resistor element, and record it as a second difference sum value of each resistor element; The time difference radiation difference of each resistor element is negatively correlated with the second difference and value of each resistor element; The method for determining the time difference of each resistor element is: The acquisition moments corresponding to all mutation points of each resistor element constitute a mutation moment sequence of each resistor element; The time difference of each resistor element is the result of the distance fusion of the mutation time sequence of all normal resistor elements and the mutation time sequence of all suspected abnormal resistor elements within the window of each resistor element.

2. A human-computer interaction method for a resistor array infrared scene generating device as claimed in claim 1, characterized in that: The expression of the radiation anomaly factor of each resistor element is: ; In the formula, represents the radiation anomaly factor of the i-th resistor element; represents the first radiation anomaly factor of the i-th resistor element; Represents the second radiation anomaly factor of the i-th resistor element.

3. A human-computer interaction method for a resistor array infrared scene generating device as claimed in claim 1, characterized in that: The expression of the mutual interference index of each resistor element is: ; In the formula, represents the mutual interference index of the i-th resistor element; It represents the time difference radiation difference of the i-th resistor element; represents the time difference of the i-th resistor element; Indicates a preset constant greater than 0.

4. A human-computer interaction method for a resistor array infrared scene generating device as claimed in claim 1, characterized in that: The monitoring of the operating state of the resistor array includes: When the average value of the mutual interference index of all resistor elements in the resistor array is less than or equal to the first preset threshold value, the operation state of the resistor array is stable. Otherwise, the operation state of the resistor array is abnormal and is reported to the supervisor.

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