Electron beam lithography system, method and semiconductor device

Abstract

The application provides an electron beam lithography system, method and semiconductor device, wherein the system comprises: a laser device for emitting spatial continuous laser with target pattern information; an electric field modulation device for applying auxiliary electric field to the electrons excited by the spatial continuous laser to control the emission of the electrons; a magnetic lens unit for focusing and guiding the emitted electron beam so that the electron beam is projected on a semiconductor chip according to the target pattern information; and the semiconductor chip for exposing the surface of the semiconductor chip according to the target pattern information to transfer the target pattern information to the photoresist. The system precisely controls the emission of the electrons in a specific area by using the spatial continuous laser with the target pattern information, so that the emitted electron beam carries the target pattern information, and through the cooperation of the interlayer electric field modulation device and the magnetic lens unit, the electron beam carrying the fine target pattern information can reproduce the patterns on the electron beam photoresist on the surface of the semiconductor chip. The system not only can quickly print the target pattern to avoid the direct writing operation and achieve high lithography resolution, but also can reduce the manufacturing cost and meet the strict requirements of high-end semiconductor manufacturing field on precision machining.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and in particular to an electron beam lithography system, method and semiconductor device. Background Technology

[0002] With the rapid development of global information technology, the semiconductor industry is facing unprecedented challenges and opportunities. The core of microelectronic devices, especially the process technology of integrated circuits, is being pushed to its limits down to a few nanometers to meet the demands for higher performance, smaller size, and lower power consumption. In this process, photolithography, as one of the key steps in semiconductor manufacturing, directly affects the performance and manufacturing cost of integrated circuits.

[0003] Traditional optical lithography, limited by the wavelength of light and the optical components of the system, has gradually reached its physical limits. As feature sizes approach the diffraction limit of light, the application of traditional lithography at the nanoscale becomes increasingly difficult. Furthermore, although extreme ultraviolet (EUV) lithography offers the possibility of further shrinking feature sizes, its extremely high equipment and operating costs limit its application in large-scale production.

[0004] In this context, electron beam lithography (EBL) offers another possibility. It uses an electron beam to directly write intricate patterns onto semiconductor wafers, unconstrained by the diffraction limit of light, achieving extremely high resolution, theoretically down to the atomic scale. However, existing electron beam lithography techniques are limited by etching individual electron focal points, resulting in low throughput, high energy consumption, and high equipment costs. These drawbacks have, to some extent, hindered its widespread application in large-scale semiconductor manufacturing.

[0005] Therefore, how to solve the problems of low processing efficiency, high cost and low resolution of existing electron beam lithography technology is an important issue that urgently needs to be addressed in the field of semiconductor processing technology. Summary of the Invention

[0006] This invention provides an electron beam lithography system, method, and semiconductor device to overcome the shortcomings of existing electron beam lithography technology, such as low processing efficiency, high cost, and low resolution, thereby improving the efficiency and resolution of electron beam lithography while reducing costs.

[0007] On one hand, the present invention provides an electron beam lithography system, comprising: a laser device for emitting a spatial continuous laser carrying target pattern information; an electric field modulation device for applying an auxiliary electric field to electrons excited by the spatial continuous laser to regulate the emission of electrons; a magnetic lens unit for focusing and guiding the emitted electron beam so that the electron beam is projected onto a semiconductor chip according to the target pattern information; and a semiconductor chip coated with photoresist for exposing the semiconductor chip surface according to the target pattern information to transfer the target pattern information onto the photoresist.

[0008] Furthermore, the laser device includes a laser generator and a patterned optical mask, wherein the laser generator is used to emit a spatial continuous laser; and the patterned optical mask is used to modulate the pattern of the spatial continuous laser to obtain a spatial continuous laser with target pattern information.

[0009] Furthermore, the electron beam lithography system also includes a planar photoelectron source for emitting an electron beam under continuous spatial laser excitation carrying target pattern information.

[0010] Furthermore, the electric field modulation device includes: a plurality of independently controlled electrodes for controlling the intensity and direction of the auxiliary electric field between two-dimensional material layers to adjust the emission characteristics of the electrons.

[0011] Furthermore, the magnetic lens unit includes at least one set of magnetic lenses for adapting to target graphic information and focusing requirements, and minimizing electron beam scattering and deflection.

[0012] Furthermore, the graphic optical mask includes any one of quartz, grating, and mask on which the target graphic information is drawn, and the size of the graphic optical mask is greater than the optical diffraction limit.

[0013] Furthermore, the planar photoelectric source is a multilayer two-dimensional material planar photoelectric source, and the multilayer two-dimensional material includes at least graphene and boron nitride.

[0014] Furthermore, the electron beam lithography system also includes a monitoring and control system, which includes: a monitoring unit for real-time monitoring of the operating status of the laser device, the electric field modulation device, and the magnetic lens unit; and a control unit for receiving the operating status feedback from the monitoring unit and adjusting the operating parameters according to the operating status.

[0015] Secondly, the present invention also provides an electron beam lithography method, comprising: receiving a spatial continuous laser carrying target pattern information; applying an auxiliary electric field to electrons excited by the spatial continuous laser to regulate the emission of electrons; focusing and guiding the emitted electron beam so that the electron beam is projected onto a semiconductor chip according to the target pattern information; exposing the semiconductor chip surface according to the target pattern information to transfer the target pattern information onto a photoresist coated on the semiconductor chip.

[0016] Thirdly, the present invention also provides a semiconductor device, which is prepared by the electron beam lithography method described above.

[0017] The electron beam lithography system provided by this invention includes a laser device, an electric field modulation device, a magnetic lens unit, and a semiconductor chip. The laser device emits a spatially continuous laser beam carrying target pattern information. The electric field modulation device applies an auxiliary electric field to the electrons excited by the spatially continuous laser, regulating electron emission. The magnetic lens unit focuses and guides the emitted electron beam, projecting it onto the semiconductor chip according to the target pattern information. The semiconductor chip is coated with photoresist, which is used to expose the semiconductor chip surface according to the target pattern information, transferring the target pattern information onto the photoresist. This system precisely controls the emission of electrons within a specific region using a spatially continuous laser carrying target pattern information, enabling the emitted electron beam to carry the target pattern information. Through the synergistic effect of the interlayer electric field modulation device and the magnetic lens unit, the electron beam carrying the fine target pattern information reproduces these patterns on the electron beam photoresist on the semiconductor chip surface. This not only enables rapid printing of target patterns, avoiding direct writing operations and achieving extremely high lithographic resolution, but also reduces manufacturing costs, meeting the stringent requirements for precision processing in the high-end semiconductor manufacturing field. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the electron beam lithography system provided in an embodiment of the present invention.

[0020] Figure 2 This is a complete structural schematic diagram of the electron beam lithography system provided in an embodiment of the present invention.

[0021] Figure 3 This is a schematic flowchart of the electron beam lithography method provided in an embodiment of the present invention.

[0022] Reference numerals: 110: Laser device; 111: Laser generator; 112: Patterned optical mask; 120: Electric field modulation device; 130: Magnetic lens unit; 140: Semiconductor chip; 150: Planar photoelectron source. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0024] It should be noted that although electron beam lithography can overcome the optical diffraction limit of traditional optical lithography and provide higher resolution, it is limited by etching at a single electron focal point, resulting in low processing efficiency and high cost.

[0025] In view of this, the present invention proposes an electron beam lithography system that uses pattern-modulated spatial continuous laser to excite electron emission and achieves large-area, arrayed, and patterned free electron emission with the assistance of interlayer electric fields.

[0026] Specifically, Figure 1 A schematic diagram of the electron beam lithography system provided in an embodiment of the present invention is shown.

[0027] like Figure 1 As shown, the electron beam lithography system includes a laser device 110, an electric field modulation device 120, a magnetic lens unit 130, and a semiconductor chip 140.

[0028] The system includes a laser device 110 for emitting a spatial continuous laser beam carrying target graphic information; an electric field modulation device 120 for applying an auxiliary electric field to the electrons excited by the spatial continuous laser beam to regulate the emission of the electrons; a magnetic lens unit 130 for focusing and guiding the emitted electron beam so that the electron beam is projected onto the semiconductor chip 140 according to the target graphic information; and a semiconductor chip 140 coated with photoresist for exposing the surface of the semiconductor chip 140 according to the target graphic information to transfer the target graphic information onto the photoresist.

[0029] It is understood that in this embodiment, the electron beam lithography system mainly includes four parts, namely, a laser device 110, an electric field modulation device 120, a magnetic lens unit 130, and a semiconductor chip 140.

[0030] Specifically, the laser device 110 includes a high-precision continuous laser generator capable of adjusting the laser's wavelength, power, and spatial mode. Simultaneously, the laser device 110 is also equipped with a mask, grating, and shield (containing target graphic information) to modulate the laser pattern, thereby emitting a spatial continuous laser with target graphic information.

[0031] The target graphic information includes, but is not limited to, the shape and size information of the target graphic. The target graphic can be set according to the actual situation, and no specific limitation is made here.

[0032] The wavelength of continuous space lasers covers the extreme ultraviolet to near-infrared bands.

[0033] It is understandable that a spatial continuous laser carrying target graphic information will be perpendicularly irradiated onto a planar photoelectron source, directly affecting the emission of electrons within the source. This causes the laser-excited area to emit an electron beam, while the unexcited area does not emit an electron beam, thus achieving the purpose of emitting an electron beam carrying target graphic information.

[0034] Specifically, the electric field modulation device 120 includes a series of electrodes precisely arranged around or between layers of a planar photoinduced electron source to apply an auxiliary electric field to electrons excited by spatial continuous laser. By finely controlling the intensity and direction of the auxiliary electric field, the emission position and characteristics of the electrons can be controlled.

[0035] Specifically, the magnetic lens unit 130 includes one or more independently operable and controllable magnetic lenses to adapt to different patterns and focusing requirements. After the electron (beam) is emitted, it enters the magnetic lens unit 130. Under the action of the magnetic lenses, the electron beam is deflected by the Lorentz force and converges towards the focusing plane. While ensuring that the electron beam carries the target pattern information, it quickly and accurately reduces the beam spot area, allowing the target pattern to break through the optical diffraction limit and be focused on the semiconductor chip 140.

[0036] It should be noted that the magnetic lens design allows for highly variable focusing adjustments, thereby enabling electron beam patterns of varying sizes and complexities. This focusing technique allows the electron beam to replicate target pattern information at the microscale, which is key to achieving nanoscale precision.

[0037] Specifically, regarding the semiconductor chip 140, the semiconductor chip 140 is coated with photoresist, which is either positive or negative electron beam photoresist. The electron beam interacts with the semiconductor chip 140 at the focusing plane of the magnetic lens, and exposes the semiconductor chip 140 surface according to the target pattern information, transferring the high-resolution target pattern information onto the photoresist of the semiconductor chip 140, thereby achieving the purpose of high-resolution and rapid pattern printing.

[0038] It is worth mentioning that this high-precision, arrayed pattern transfer technology can be used to rapidly manufacture advanced microelectronic devices, such as high-speed processors and high-density memories, with accuracy and efficiency significantly exceeding traditional photolithography and direct-write electron beam lithography technologies.

[0039] Among them, the semiconductor chip 140 can be made of common micro-nano processing materials such as silicon-based, silicon dioxide-based, silicon nitride-based, lithium niobate-based, silicon-on-insulator (SOI)-based, and metal.

[0040] It is worth mentioning that the core of this embodiment lies in utilizing spatial pattern modulation of a spatially continuous laser to precisely control the emission of electrons in different regions of a planar photoelectron source, enabling the emitted electron beam to carry target pattern information. Furthermore, through the synergistic effect of interlayer electric field modulation and magnetic lenses, the electron beam carrying intricate pattern information is used to reproduce these patterns on the electron beam photoresist on the semiconductor surface. This method enables rapid printing of target patterns while avoiding direct writing operations, and achieves extremely high lithographic resolution, meeting the stringent precision requirements of high-end semiconductor manufacturing.

[0041] In this embodiment, the electron beam lithography system includes a laser device 110, an electric field modulation device 120, a magnetic lens unit 130, and a semiconductor chip 140. The laser device 110 emits a spatial continuous laser beam carrying target pattern information; the electric field modulation device 120 applies an auxiliary electric field to the electrons excited by the spatial continuous laser beam to regulate electron emission; the magnetic lens unit 130 focuses and guides the emitted electron beam so that it is projected onto the semiconductor chip 140 according to the target pattern information; the semiconductor chip 140 is coated with photoresist, and exposure is performed on its surface according to the target pattern information to transfer the target pattern information onto the photoresist. This system precisely controls the emission of electrons within a specific area using a spatial continuous laser carrying target graphic information. The emitted electron beam carries the target graphic information, and through the synergistic effect of the interlayer electric field modulation device 120 and the magnetic lens unit 130, the electron beam carrying the fine target graphic information reproduces these patterns on the electron beam photoresist on the surface of the semiconductor chip 140. This not only enables rapid printing of target graphics without direct writing operations and achieves extremely high photolithography resolution, but also reduces manufacturing costs and meets the stringent requirements for precision processing in the high-end semiconductor manufacturing field.

[0042] Based on the above embodiments, the laser device 110 further includes a laser generator and a patterned optical mask, wherein the laser generator is used to emit a spatial continuous laser; and the patterned optical mask is used to modulate the pattern of the spatial continuous laser to obtain a spatial continuous laser with target graphic information.

[0043] Understandably, the laser device 110 includes a high-precision continuous laser generator capable of adjusting the laser's wavelength, power, and spatial mode. The laser generator outputs the beam via optical fiber or a direct optical path, ensuring stability and accuracy during laser transmission.

[0044] Meanwhile, the laser device 110 is also equipped with a patterned optical mask, which can modulate the pattern of the laser and then emit a spatial continuous laser carrying target pattern information, thereby forming a specific excitation region on the planar photoelectron source (corresponding to the target pattern information carried by the spatial continuous laser). The excitation region will be excited by the spatial continuous laser and emit an electron beam carrying target pattern information.

[0045] The graphic optical mask can be a quartz or other transparent hard sheet used to draw optical graphic information, or a grating, mask, or other method, and is not specifically limited here.

[0046] For example, in one specific embodiment, the graphic optical mask includes any one of quartz, grating, and mask on which the target graphic information is drawn, and the size of the graphic optical mask is greater than the optical diffraction limit.

[0047] The target graphic information includes, but is not limited to, the shape and size information of the target graphic. The target graphic can be set according to the actual situation, and no specific limitation is made here.

[0048] Space continuous laser is a continuous laser beam that extends from the extreme ultraviolet to the near-infrared band.

[0049] By utilizing specific optical elements, such as masks, gratings, and shields, spatial patterns of a continuous-wave laser are modulated. This modulation allows the intensity and shape of the electron beam to be locally adjusted according to a preset pattern when the continuous-wave laser illuminates a planar photoelectron source. These patterned beams directly affect the excitation electron source of the continuous-wave laser, enabling these light-receiving areas (excitation areas) to emit electrons, thus achieving precise control over the electron emission areas. Subsequently, the electron beam carrying the target pattern information is precisely focused by a magnetic lens unit 130, achieving high-precision, arrayed pattern transfer on the semiconductor chip 140.

[0050] In this embodiment, the laser device 110 includes a laser generator and a patterned optical mask. The laser generator is used to emit a spatial continuous laser. The patterned optical mask is used to modulate the pattern of the spatial continuous laser to obtain a spatial continuous laser with target pattern information. Then, the electric field modulation device 120 is used to apply an auxiliary electric field to the electrons excited by the spatial continuous laser to regulate the emission of electrons. The magnetic lens unit 130 is used to focus and guide the emitted electron beam so that the electron beam is projected onto the semiconductor chip 140 according to the target pattern information. The semiconductor chip 140 is coated with photoresist and is used to expose the surface of the semiconductor chip 140 according to the target pattern information to transfer the target pattern information onto the photoresist. This system precisely controls the emission of electrons within a specific area using a spatial continuous laser carrying target graphic information. The emitted electron beam carries the target graphic information, and through the synergistic effect of the interlayer electric field modulation device 120 and the magnetic lens unit 130, the electron beam carrying the fine target graphic information reproduces these patterns on the electron beam photoresist on the surface of the semiconductor chip 140. This not only enables rapid printing of target graphics without direct writing operations and achieves extremely high photolithography resolution, but also reduces manufacturing costs and meets the stringent requirements for precision processing in the high-end semiconductor manufacturing field.

[0051] Based on the above embodiments, the electron beam lithography system further includes: a planar photoelectron source for emitting an electron beam under spatial continuous laser excitation with target pattern information.

[0052] Understandably, after the laser device 110 emits a spatial continuous laser carrying target graphic information, the spatial continuous laser will directly and perpendicularly irradiate the planar photoelectron source. Since the spatial continuous laser carries target graphic information, it will form a specific excitation region on the planar photoelectron source. The excitation region will emit an electron beam under the irradiation of the spatial continuous laser. Conversely, other regions on the planar photoelectron source other than the excitation region will not emit an electron beam. Thus, the emitted electron beam will present the shape and size of the target graphic as a whole.

[0053] Among them, the types of planar photoinduced electron sources can be negative electron affinity photocathodes, quantum well photocathodes, multi-alkali photocathodes, metal plates, single-layer two-dimensional materials, and multi-layer two-dimensional material heterojunctions.

[0054] For example, in one specific embodiment, the planar photoelectric source is a multilayer two-dimensional material planar photoelectric source, wherein the multilayer two-dimensional material includes at least graphene and boron nitride.

[0055] Subsequently, a series of electrodes of the electric field modulation device 120 are arranged around or between the layers of the planar photoelectron source. These electrodes apply an auxiliary electric field to the electron beam emitted from the excitation region and adjust the auxiliary electric field. By finely controlling the intensity and direction of the auxiliary electric field, the emission position and characteristics of the electrons can be controlled.

[0056] Furthermore, the electron beam, modulated by the electric field modulation device 120, enters the magnetic lens unit 130. This unit uses a magnetic field to precisely control the path of the electron beam, ensuring that the beam spot is significantly and accurately reduced, allowing the preset pattern (target graphic information) to break through the optical diffraction limit and be focused on the semiconductor wafer. The design of the magnetic lens allows for highly variable focusing adjustments, thereby achieving electron beam patterns of different sizes and complexities. This focusing technology is key to achieving nanoscale precision, allowing the electron beam to replicate target graphic information at the microscale.

[0057] After being focused by a magnetic lens, the electron beam exposes the surface of the semiconductor chip 140 according to a precisely controlled pattern (i.e., target pattern information). This high-precision, arrayed pattern transfer technology can be used to rapidly manufacture advanced microelectronic devices, such as high-speed processors and high-density memories, with accuracy and efficiency significantly exceeding traditional photolithography and direct-write electron beam lithography technologies. Through the integrated application of these technologies, this embodiment provides an electron beam lithography solution that transcends the limitations of traditional technologies and is suitable for the high-precision manufacturing needs of future semiconductor technologies.

[0058] In this embodiment, the electron beam lithography system further includes a planar photoelectron source for emitting an electron beam under spatial continuous laser excitation carrying target pattern information. Then, an electric field modulation device 120 applies an auxiliary electric field to the electrons excited by the spatial continuous laser to regulate electron emission. A magnetic lens unit 130 focuses and guides the emitted electron beam so that it is projected onto the semiconductor chip 140 according to the target pattern information. The semiconductor chip 140 is coated with photoresist, and exposure is performed on its surface according to the target pattern information, transferring the target pattern information onto the photoresist. This system precisely controls the emission of electrons in a specific area using a spatial continuous laser carrying target pattern information, enabling the emitted electron beam to carry the target pattern information. Through the synergistic effect of the interlayer electric field modulation device 120 and the magnetic lens unit 130, the electron beam carrying the fine target pattern information reproduces these patterns on the electron beam photoresist on the surface of the semiconductor chip 140. This not only enables rapid printing of target patterns without direct writing operations, achieving extremely high lithographic resolution, but also reduces manufacturing costs and meets the stringent requirements for precision processing in the high-end semiconductor manufacturing field.

[0059] Based on the above embodiments, the electric field modulation device 120 further includes: a plurality of independently controlled electrodes for controlling the intensity and direction of the auxiliary electric field between two-dimensional material layers to adjust the electron emission characteristics.

[0060] Understandably, the electric field modulation device 120 includes a series of electrodes precisely arranged around or between layers of the planar photoelectron source to apply and modulate an auxiliary electric field. By finely controlling the intensity and direction of the auxiliary electric field, the emission position and characteristics of electrons can be controlled. The electric field modulation device 120 employs a high-precision voltage source and an electric field controller to achieve fine-tuning of the electric field parameters, supporting electron emission in complex patterns.

[0061] It is worth noting that the application of an auxiliary electric field and the modulation of the laser mode (a spatially continuous laser carrying target pattern information) work synergistically to regulate the emission position and density of electrons. This control is based not only on adjusting the strength of the auxiliary electric field but also on the precise setting of the laser mode. The emitted electrons carry this pattern information (target pattern information), which is achieved through the precise adjustment of the interaction between the auxiliary electric field and the laser irradiation mode.

[0062] Then, the magnetic lens unit 130 is responsible for focusing and guiding the emitted electron beam to ensure that the electron beam can be accurately projected onto the semiconductor chip 140 according to the target pattern information.

[0063] Finally, after being focused by a magnetic lens, the electron beam is exposed on the surface of the semiconductor chip 140 according to a precisely controlled pattern (i.e., target graphic information), accurately transferring the target graphic information onto the electron beam photoresist.

[0064] In this embodiment, the electric field modulation device 120 includes multiple independently controlled electrodes for controlling the intensity and direction of the auxiliary electric field between two-dimensional material layers to adjust the electron emission characteristics. Then, the magnetic lens unit 130 focuses and guides the emitted electron beam so that it is projected onto the semiconductor chip 140 according to the target pattern information. The semiconductor chip 140 is coated with photoresist, and exposure is performed on its surface according to the target pattern information, transferring the target pattern information onto the photoresist. This system precisely controls the emission of electrons within a specific region using a spatially continuous laser carrying the target pattern information, enabling the emitted electron beam to carry the target pattern information. Through the synergistic effect of the interlayer electric field modulation device 120 and the magnetic lens unit 130, the electron beam carrying the fine target pattern information reproduces these patterns on the electron beam photoresist on the surface of the semiconductor chip 140. This not only enables rapid printing of target patterns without direct writing operations, achieving extremely high lithographic resolution, but also reduces manufacturing costs, meeting the stringent requirements for precision processing in the high-end semiconductor manufacturing field.

[0065] Based on the above embodiments, the magnetic lens unit 130 further includes at least one set of magnetic lenses for adapting to target graphic information and focusing requirements, and minimizing electron beam scattering and deflection.

[0066] Understandably, the magnetic lens unit 130 includes one or more sets of magnetic lenses, each of which can be independently controlled to adapt to different patterns and focusing requirements. The design and layout of the magnetic lenses are optimized to minimize electron beam scattering and deflection.

[0067] Specifically, once electrons are emitted, they enter the magnetic lens unit 130. This unit uses a magnetic field to precisely control the path of the electron beam, ensuring that the beam spot is significantly and accurately reduced, allowing the target pattern information to break through the optical diffraction limit and be focused on the semiconductor wafer. The magnetic lens design allows for highly variable focusing adjustments, thereby achieving electron beam patterns of different sizes and complexities. This focusing technique is key to achieving nanoscale precision, allowing the electron beam to replicate pattern information at the microscale.

[0068] After being focused by a magnetic lens, the electron beam exposes the target semiconductor material surface according to a precisely controlled pattern. This high-precision, arrayed pattern transfer technology can be used to rapidly manufacture advanced microelectronic devices, such as high-speed processors and high-density memories, with accuracy and efficiency significantly exceeding traditional photolithography and direct-write electron beam lithography technologies. Through the integrated application of these technologies, this embodiment provides an electron beam lithography solution that transcends the limitations of traditional technologies and is suitable for the high-precision manufacturing needs of future semiconductor technologies.

[0069] Based on the above embodiments, the electron beam lithography system further includes a monitoring and control system, which includes: a monitoring unit for real-time monitoring of the operating status of the laser device 110, the electric field modulation device 120, and the magnetic lens unit 130; and a control unit for receiving the operating status feedback from the monitoring unit and adjusting the operating parameters according to the operating status.

[0070] Understandably, an electron beam lithography system also includes a monitoring and control system, which comprises a monitoring unit and a control unit.

[0071] The integrated control unit, employing advanced microprocessors and software, coordinates the operation of the laser device 110, the electric field modulation device 120, and the magnetic lens unit 130. The control system allows users to operate it via a graphical interface, including setting parameters, initiating the processing, and monitoring the status.

[0072] The monitoring unit includes various sensors and cameras to monitor the laser excitation, electric field effect, and electron beam status during the processing in real time, and feeds this data back to the control unit to adjust the corresponding operating parameters to ensure processing quality and accuracy.

[0073] In this embodiment, the operation status of the laser device 110, the electric field modulation device 120, and the magnetic lens unit 130 are monitored in real time by the monitoring unit, and the operation parameters are adjusted according to the operation status by the control unit, which can effectively ensure the processing quality and accuracy of the semiconductor device.

[0074] In some embodiments, Figure 2 A complete structural schematic diagram of the electron beam lithography system provided in an embodiment of the present invention is shown.

[0075] like Figure 2 As shown, the electron beam lithography system includes a laser device 110 (including a laser generator 111 and a patterned optical mask 112), a planar photoelectron source 150, an electric field modulation device 120, a magnetic lens unit 130 (multiple sets of magnetic lenses 131), and a semiconductor chip 140 coated with photoresist.

[0076] The laser generator 111 is used to emit a spatial continuous laser, and the patterned optical mask 112 is used to modulate the pattern of the spatial continuous laser to obtain a spatial continuous laser with target pattern information.

[0077] Next, the modulated spatial continuous laser is perpendicularly irradiated onto the planar photoelectron source 150 to form a specific excitation region. The excitation region emits an electron beam under the irradiation of the spatial continuous laser. In this case, the electric field modulation device 120 applies an auxiliary electric field to the electron beam emitted by the excitation region to regulate the emission of the electron beam and make the electron beam carry the target graphic information.

[0078] After the electron beam is emitted, it passes through the magnetic lens unit 130, where the magnetic lens 131 focuses and guides the emitted electron beam so that it is projected onto the semiconductor chip 140 according to the target pattern information.

[0079] Finally, the electron beam exposes the semiconductor chip 140 surface according to the target pattern information, transferring the target pattern information to the electron beam photoresist of the semiconductor chip 140, thereby achieving fast and high-resolution pattern printing.

[0080] In other embodiments, a process for fabricating circuit patterns with linewidths of less than 10 nanometers on a silicon wafer using a multilayer two-dimensional material planar photoelectric source 150 is shown in detail.

[0081] (1) System configuration.

[0082] The laser generator 111 in the laser device 110 is configured as a continuous wave laser with a specific wavelength and output power. The electric field modulation device 120 and the magnetic lens unit 130 are integrated on the same control platform.

[0083] (2) Laser power.

[0084] The laser was set at a wavelength of 800 nm and its power was adjusted to 1 watt, a power level sufficient to excite the graphene material and control the patterning of the laser pattern. A chromium mask was used to form the desired beam pattern and focus it onto a predetermined small area.

[0085] (3) Electric field strength.

[0086] An auxiliary electric field is applied between the two-dimensional material thin film layers, with a voltage set to 100 volts to create an electric field strength of approximately 1 V / µm between the material layers. Precise control of the auxiliary electric field is achieved through a high-precision voltage regulator, ensuring that the electron emission position precisely corresponds to the laser excitation mode.

[0087] (4) Focusing accuracy of magnetic lens.

[0088] The focusing accuracy of the magnetic lens unit 130 is adjusted to a high-resolution mode to achieve a focusing accuracy of less than 10 nanometers. The focusing current is stably controlled within the range of 5 mA to optimize the electron beam path and the fineness of the final pattern.

[0089] (5) Experimental process.

[0090] Electron beam exposure was performed under the aforementioned parameter settings. The combined effect of laser excitation and an auxiliary electric field caused the two-dimensional material in a specific region to emit electrons. After being precisely focused by the magnetic lens unit 130, the electron beam reproduced the designed pattern on the silicon wafer. The linewidth of the pattern was precisely controlled to be below 10 nanometers.

[0091] (6) Results and evaluation.

[0092] The patterns were characterized in detail using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show that the fabricated circuit patterns have high consistency and accuracy, uniform linewidth, and an error range controlled within ±1 nm.

[0093] Based on the electron beam lithography system described in the above embodiments, the present invention also provides an electron beam lithography method. Specifically, Figure 3 A schematic flowchart of the electron beam lithography method provided in an embodiment of the present invention is shown.

[0094] like Figure 3As shown, the method includes steps S310-S340, namely: S310, receiving a spatial continuous laser with target pattern information; S320, applying an auxiliary electric field to the electrons excited by the spatial continuous laser to regulate the emission of electrons; S330, focusing and guiding the emitted electron beam so that the electron beam is projected onto the semiconductor chip 140 according to the target pattern information; S340, exposing the surface of the semiconductor chip 140 according to the target pattern information to transfer the target pattern information to the photoresist coated on the semiconductor chip 140.

[0095] It should be noted that the electron beam lithography method provided in this embodiment can be referred to in correspondence with the electron beam lithography system described in the above embodiments, and will not be repeated here.

[0096] In this embodiment, by receiving a spatial continuous laser carrying target pattern information and applying an auxiliary electric field to the electrons excited by the spatial continuous laser, the emission of electrons is controlled, and the emitted electron beam is focused and guided so that the electron beam is projected onto the semiconductor chip 140 according to the target pattern information. This allows for exposure on the surface of the semiconductor chip 140 according to the target pattern information, transferring the target pattern information to the photoresist coated on the semiconductor chip 140. This method utilizes a spatial continuous laser carrying target pattern information to precisely control the emission of electrons in a specific area, enabling the emitted electron beam to carry the target pattern information. Through the synergistic effect of the interlayer electric field modulation device 120 and the magnetic lens unit 130, the electron beam carrying the fine target pattern information reproduces these patterns on the electron beam photoresist on the surface of the semiconductor chip 140. This not only enables rapid printing of target patterns without direct writing operations, achieving extremely high lithographic resolution, but also reduces manufacturing costs, meeting the stringent requirements for precision processing in the high-end semiconductor manufacturing field.

[0097] In some embodiments, the present invention also provides a semiconductor device fabricated using the electron beam lithography method described above, which not only has extremely high lithographic resolution but also low manufacturing cost, meeting the stringent requirements for precision processing in the high-end semiconductor manufacturing field.

[0098] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0099] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.

[0100] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An electron beam lithography system, characterized in that, include: Laser device used to emit continuous spatial laser light carrying target graphic information; An electric field modulation device is used to apply an auxiliary electric field to electrons excited by the spatial continuous laser, thereby controlling the emission of electrons; A magnetic lens unit is used to focus and guide the emitted electron beam so that the electron beam is projected onto the semiconductor chip according to the target pattern information; A semiconductor chip coated with photoresist is used to expose the semiconductor chip surface according to the target pattern information and transfer the target pattern information onto the photoresist.

2. The electron beam lithography system according to claim 1, characterized in that, The laser device includes a laser generator and a patterned optical mask, wherein... The laser generator is used to emit continuous space laser light; The graphic optical mask is used to modulate the pattern of the spatial continuous laser to obtain a spatial continuous laser with target graphic information.

3. The electron beam lithography system according to claim 1, characterized in that, The electron beam lithography system also includes: A planar photoelectron source is used to emit an electron beam under continuous spatial laser excitation with target graphic information.

4. The electron beam lithography system according to claim 1, characterized in that, The electric field modulation device includes: Multiple independently controlled electrodes are used to control the strength and direction of the auxiliary electric field between two-dimensional material layers to modulate the emission characteristics of the electrons.

5. The electron beam lithography system according to claim 1, characterized in that, The magnetic lens unit includes: At least one set of magnetic lenses is used to adapt to the target pattern information and focusing requirements, minimizing the scattering and deflection of the electron beam.

6. The electron beam lithography system according to claim 2, characterized in that, The graphic optical mask includes any one of quartz, grating, and mask on which the target graphic information is drawn, and the size of the graphic optical mask is greater than the optical diffraction limit.

7. The electron beam lithography system according to claim 3, characterized in that, The planar photoelectric source is a multilayer two-dimensional material planar photoelectric source, and the multilayer two-dimensional material includes at least graphene and boron nitride.

8. The electron beam lithography system according to any one of claims 1-7, characterized in that, The electron beam lithography system further includes a monitoring and control system, which includes: The monitoring unit is used to monitor the operating status of the laser device, the electric field modulation device, and the magnetic lens unit in real time. The control unit is used to receive the operation status feedback from the monitoring unit and adjust the operation parameters according to the operation status.

9. An electron beam lithography method, characterized in that, include: Receives continuous spatial laser light carrying target graphic information; An auxiliary electric field is applied to the electrons excited by the spatial continuous laser to regulate the emission of the electrons; The emitted electron beam is focused and guided so that it is projected onto the semiconductor chip according to the target pattern information; The target pattern information is exposed on the surface of the semiconductor chip, and the target pattern information is transferred to the photoresist coated on the semiconductor chip.

10. A semiconductor device, characterized in that, The semiconductor device is prepared using the electron beam lithography method described in claim 9.

Images