A metal-catalyzed non-thermal plasma reaction device, method and application

Abstract

The present invention provides a device, method, and application for a metal-catalyzed non-thermal plasma reaction. The device comprises: a plasma reaction unit, a first connecting device, a second connecting device, a third connecting device, a first magnetron sputtering unit, and a sample pool. The plasma reaction unit has a storage space for ionizing and colliding reactant gases to form new compounds. The first connecting device, the second connecting device, and the third connecting device are disposed within the plasma reaction unit. The first magnetron sputtering unit is disposed within the storage space of the plasma reaction unit. The sample pool is disposed within the storage space of the plasma reaction unit. The metal-catalyzed non-thermal plasma reaction device of the above embodiment is capable of performing plasma reactions at temperatures much lower than current industrial processes. Compared to similar reaction systems, the reaction unit of this embodiment is larger in scale and has a greater reactant processing capacity, significantly reducing average reaction energy consumption.

Description

Technical Field

[0001] The present invention relates to the field of plasma reaction technology, and in particular to a metal-catalyzed non-thermal plasma reaction device, method and application. Background Art

[0002] Plasma, composed of electrons, ions, excited atoms, and free radicals, is electrically neutral on a macroscopic scale and is considered the fourth state of matter, following gas, liquid, and solid. Based on thermodynamic equilibrium, plasmas can be divided into three categories: high-temperature plasma, thermal plasma, and low-temperature plasma. High-temperature plasmas are commonly found inside the sun, in laser fusion, and in nuclear fusion; thermal plasmas include arc plasma and high-frequency plasma; and low-temperature plasmas are distinguished by their discharge methods.

[0003] Non-thermal equilibrium plasmas are typically generated through gas discharges. Different types of discharges have different discharge mechanisms and produce plasmas with varying properties. Currently, the main types of discharges include dielectric barrier discharge (DBD), microwave discharge, radio frequency discharge, glow discharge, and corona discharge.

[0004] Non-thermal equilibrium plasma has a very high electron temperature, while the ion and molecular temperatures are close to room temperature. This thermodynamic non-equilibrium allows chemical reactions to proceed at room temperature and pressure, and can activate and dissociate gas molecules to form highly reactive species at lower temperatures (compared to traditional methods). The collision of high-energy electrons weakens the binding energy between molecules, causing the molecules to dissociate into atomic or ionic states that are easy to combine. These particles then collide with each other and combine to form new compounds. Therefore, plasma can carry out some reactions that cannot occur under conventional reaction conditions such as room temperature and pressure, effectively overcoming the mutual limitations of factors such as thermodynamics and kinetics. It has therefore become a hot topic and focus of research in recent years and has very good application prospects. However, there are still the following problems to be solved before industrialization can be achieved: (1) Energy consumption is too high, and energy efficiency needs to be further improved. (2) It is difficult to scale up the reactor scale and raw material processing capacity. Summary of the Invention

[0005] In recent years, magnetron sputtering technology has been widely used in industrial production. Its basic principle is to introduce an appropriate amount of gas (such as argon or nitrogen) under low pressure conditions (less than 10mbar), turn on the power, and the gas undergoes a glow discharge phenomenon. The accelerated electrons collide with gas molecules or atoms, causing ionization reactions to produce ions and electrons. Under the action of the electric field, the ions are accelerated and bombard the cathode target, generating a large number of sputtered particles and secondary electrons. The sputtered secondary electrons are affected by the electric and magnetic fields and move in a cycloidal manner on the target surface. They continue to collide with the gas, continuously ionizing a large number of ions and bombarding the target, thereby greatly improving the ionization efficiency near the target and the plasma density in the vacuum chamber, thereby improving the sputtering efficiency of the target. This method not only effectively generates plasma, but also can introduce metal species through the use of different target materials, producing a catalytic effect on the plasma reaction, reducing reaction energy consumption or improving product selectivity.

[0006] Against this backdrop, the present invention provides an experimental device and method for conducting metal-catalyzed plasma reactions under relatively mild conditions using magnetron sputtering. This device and method address the challenges of conventional reactions and significantly reduce reaction energy consumption.

[0007] The present invention aims to at least partially solve one of the technical problems in the related art. To this end, the present invention provides a metal-catalyzed non-thermal plasma reaction device, comprising: a plasma reaction unit having a storage space for providing a reaction gas for ionization and collision combination to form a new compound; a first connecting device, disposed in the plasma reaction unit and used to connect to a reactant supply unit; a second connecting device, disposed in the plasma reaction unit and used to connect to a gas chromatograph (GC-MS) or to set an observation window; a third connecting device, disposed in the plasma reaction unit and having a first gas outlet for connecting to an exhaust unit, a second gas outlet for connecting to a gas pool, and a third gas outlet for connecting to a gas pressure sensor; a first magnetron sputtering unit, disposed in the storage space of the plasma reaction unit and used to discharge and generate plasma and sputter metal particles for catalytic reaction; and a sample pool, disposed in the storage space of the plasma reaction unit and used to introduce volatile species into the storage space as a catalyst or a supplement to the reactants.

[0008] Optionally, the accommodation space is formed by a structure capable of guiding, confining, and transmitting ions, and the accommodation space is an open space;

[0009] The plasma reaction unit and the gas pool are each connected to a gas pressure measuring sensor, and the gas pressure measuring sensor is a piezoresistive sensor, a piezoelectric sensor, a capacitive sensor, a thermal sensor or a resonance sensor.

[0010] Optionally, at least one second magnetron sputtering unit is further included, which is located in the accommodating space of the plasma reaction unit and is used to cooperate with the first magnetron sputtering unit to discharge and generate plasma and sputter to generate metal particles for catalytic reaction.

[0011] Optionally, the second magnetron sputtering unit is 80-120 mm away from the first magnetron sputtering unit; and a base is further provided on the plasma reaction unit.

[0012] Optionally, the first magnetron sputtering unit is connected via a CF150 standard flange, and the second magnetron sputtering unit is connected via a CF16 standard flange;

[0013] A through hole for connecting a DC power supply and a cooling circulation system is reserved in the center of the CF150 standard flange and the CF16 standard flange.

[0014] Optionally, the first magnetron sputtering unit and the second magnetron sputtering unit both have grooves for fixing metal targets, and the diameter of the through hole ranges from 14 to 20 mm; the CF150 standard flange and / or the CF16 standard flange are stainless steel flanges.

[0015] Optionally, the reactant or catalyst is a single substance or compound in a gaseous, liquid or solid state at room temperature; the cooling method of the cooling circulation system is at least one of gas flow heat dissipation or liquid flow heat dissipation.

[0016] Optionally, the reactant or catalyst is a single substance or compound that is in liquid or solid state at room temperature and can generate a vapor pressure of more than 10Pa at room temperature; the reactant supply unit is configured as a reaction gas cylinder, the air intake is controlled by a spherical valve, and the flow rate is controlled by a mass flow meter; the first connecting device and the second connecting device are arranged opposite to each other, and both include CF35 standard flanges; the volume of the accommodating space is 5-8L, and the CF35 standard flange is a stainless steel flange; the third connecting device is a flange including a plexiglass observation window.

[0017] The present invention provides a method for chemical ion modification using a metal-catalyzed non-thermal plasma reaction device, the method comprising the following steps:

[0018] Step 1. The gas pressure of the plasma reaction unit is maintained below 10 Pa by the exhaust unit;

[0019] Step 2. Open the reactant supply unit and control the flow rate to maintain the pressure within the range of 10-1500 Pa;

[0020] Step 3. Turn on the circulating cooling system and power supply of the magnetron sputtering unit, adjust the voltage to 200-500V, adjust the current to 0-2A, start the reaction, and control the reaction time to 1-120 minutes. The gas molecules are ionized into gas ions and then combine to form new compounds, resulting in a mixed gas of reactants and products, which is collected in a gas pool.

[0021] Step 4. Finally, the magnetron sputtering unit is turned off and the collected product is tested by one or more of gas chromatography, infrared spectroscopy, or mass spectrometry.

[0022] The present invention provides an application of a metal catalytic non-thermal plasma reaction device in carrying out a reaction with a high reaction energy barrier under mild conditions.

[0023] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned by practice of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0025] Figure 1 2 is a front view (cross-sectional view) of the non-thermal plasma reaction device in Example 1 and Example 2 of the present invention;

[0026] Figure 2 1 is a top view of the non-thermal plasma reaction device in Example 1 and Example 2 of the present invention;

[0027] Figure 3 It is a left side view of the non-thermal plasma reaction device in Example 1 and Example 2 of the present invention;

[0028] Figure 4 Schematic diagram of the connection between the magnetron sputtering unit and the CF150 standard flange in Examples 1 and 2 of the present invention;

[0029] Figure 5 Schematic diagram of the three-dimensional structure of the non-thermal plasma reaction device in Example 1 and Example 2 of the present invention;

[0030] Figure 6 This is an infrared spectrum of a product obtained by performing a plasma reaction using the device in Example 1;

[0031] Figure 7This is an infrared spectrum of a product obtained by performing a plasma reaction using the device in Example 2;

[0032] Figure 8 This is an infrared spectrum of the product obtained by performing a plasma reaction using the device in Example 3.

[0033] Reference numerals:

[0034] 1-CF150 standard flange, 2-first magnetron sputtering unit, 3-plasma reaction unit, 4-base, 5-third connecting device, 6-second magnetron sputtering unit, 7-sample cell, 8-first connecting device, 9-first gas outlet, 10-second gas outlet, 11-second connecting device, 12-third gas outlet, 13-CF16 standard flange. DETAILED DESCRIPTION

[0035] The technical solutions of the present invention will be described in further detail below with reference to specific embodiments. It should be understood that the following embodiments are merely illustrative and explanations of the present invention and should not be construed as limiting the scope of protection of the present invention. All technologies implemented based on the above content of the present invention are encompassed within the scope of protection that the present invention is intended to protect.

[0036] This embodiment provides a metal-catalyzed non-thermal plasma reaction device, primarily comprising: a plasma reaction unit 3, a first connecting device 8, a second connecting device 11, a third connecting device 5, a first magnetron sputtering unit 2, and a sample pool 7. The plasma reaction unit 3 comprises a storage space for ionizing and colliding reactant gases to form new compounds. The first connecting device 8 is disposed in the plasma reaction unit 3 and is connected to a reactant supply unit. The second connecting device 11 is disposed in the plasma reaction unit 3 and is connected to a gas chromatograph (GC-MS) or replaced with an observation window. The third connecting device 5 is disposed in the plasma reaction unit 3 and comprises a first gas outlet 9 for connecting to an exhaust unit, a second gas outlet 10 for connecting to a gas pool, and a third gas outlet 12 for connecting to a pressure sensor. The exhaust unit provides a low-pressure reaction environment. The first magnetron sputtering unit 2 is disposed in the storage space of the plasma reaction unit 3 and is used to discharge and generate plasma and sputter metal particles for catalytic reaction. The sample pool 7 is disposed in the storage space of the plasma reaction unit 3 and is used to introduce volatile species into the storage space as catalysts or reactant supplements, such as metal carbonyl compounds, which can also serve as reactant supplements. A magnetron sputtering source is used, and metal species are introduced for catalytic reaction, and electric and magnetic fields are used to guide the particles to collide with each other to achieve the purpose of activation.

[0037] The metal-catalyzed non-thermal plasma reaction device of the above embodiment can perform plasma reactions at temperatures much lower than current industrial processes; compared with similar reaction systems, the reaction unit of this embodiment is larger in scale and has a stronger ability to process reactants, significantly reducing the average reaction energy consumption.

[0038] In some embodiments, the accommodating space is formed by a structure capable of guiding, confining, and transmitting ions, and the accommodating space is an open space. According to one embodiment, the reactant supply unit is configured as a reactant gas cylinder, the gas intake is controlled by a ball valve, and the flow rate is controlled by a mass flow meter.

[0039] The first connecting device 8 and the second connecting device 11 are arranged opposite to each other and both include CF35 standard flanges. The volume of the accommodating space is 5-8 L, wherein the CF35 standard flanges are stainless steel flanges. A base 4 is also provided on the plasma reaction unit 3.

[0040] For example, the interior of the plasma reaction unit 3 has a accommodating space with an overall length of 325 mm, an inner diameter of 150 mm, and a volume of approximately 6 L. The openings on both sides are designed to be standard knife-edge flanges (i.e., CF150 standard flange 1), and the outer wall is designed with three standard knife-edge flange openings; optionally, one of the flanges can be set as a flange including a plexiglass observation window for observing discharge phenomena, for example, the third connecting device 5 is a flange including a plexiglass observation window.

[0041] In some embodiments, the metal-catalyzed non-thermal plasma reaction apparatus further includes at least one second magnetron sputtering unit 6, located within the accommodation space of the plasma reaction unit 3. The second magnetron sputtering unit 6 is configured to cooperate with the first magnetron sputtering unit 2 to discharge and generate plasma and sputter metal particles for the catalytic reaction. Compared to similar reaction systems, the use of dual magnetron sputtering sources allows for the simultaneous introduction of multiple metal species for catalytic reactions, significantly improving reaction efficiency. The second magnetron sputtering unit 6 and the first magnetron sputtering unit 2 can be the same or different.

[0042] Specifically, the second magnetron sputtering unit 6 is arranged opposite to the first magnetron sputtering unit 2 , and the second magnetron sputtering unit 6 is 80-120 mm away from the first magnetron sputtering unit 2 . For example, the second magnetron sputtering unit 6 is 100 mm, 110 mm, etc. away from the first magnetron sputtering unit 2 .

[0043] Two magnetron sputtering units (i.e., the second magnetron sputtering unit 6 and the first magnetron sputtering unit 2) can simultaneously perform magnetron sputtering to generate plasma. The magnetron sputtering unit is connected to a DC power supply, and the power supply can adjust different currents; the magnetron sputtering unit is connected to a cooling circulation system for absorbing the Joule heat generated during the discharge process to prevent the magnetron sputtering unit from being affected by high temperature. According to the solution of this embodiment, the two magnetron sputtering units are respectively arranged on the left and right sides of the plasma reaction unit, and can discharge and react at the same time. The cooling method of the cooling circulation system is at least one of gas flow heat dissipation or liquid flow heat dissipation. Preferably, the cooling method is liquid flow heat dissipation, such as liquid water flow heat dissipation.

[0044] When the second magnetron sputtering unit 6 and the first magnetron sputtering unit 2 exist at the same time, under the joint action of the second magnetron sputtering unit 6 and the first magnetron sputtering unit 2, the reactants between the first magnetron sputtering unit 2 and the second magnetron sputtering unit 6 can fully react, greatly reducing energy waste.

[0045] Furthermore, the two magnetron sputtering units can use different metal targets to sputter out different types of metal species, which have different catalytic effects on the plasma reaction, thereby obtaining a higher conversion rate or product selectivity.

[0046] In some embodiments, the first magnetron sputtering unit 2 is connected via a CF150 standard flange 1, and the second magnetron sputtering unit 6 is connected via a CF16 standard flange 13. Both the CF150 standard flange 1 and the CF16 standard flange 13 have through-holes in their centers for connecting a DC power supply and a cooling circulation system. The through-holes have a diameter ranging from 14 to 20 mm, for example, 16 mm or 18 mm. The CF150 standard flange 1 and / or the CF16 standard flange 13 are stainless steel flanges.

[0047] Specifically, the first magnetron sputtering unit 2 and the second magnetron sputtering unit 6 both have grooves for fixing metal targets, and different types of metals can be used for discharge.

[0048] In some embodiments, the reactant or catalyst is a substance or compound that is gaseous, liquid, or solid at room temperature. For example, the reactant or catalyst is a substance or compound that is liquid or solid at room temperature and can generate a vapor pressure of 10 Pa or more at room temperature.

[0049] According to one embodiment, the plasma reaction unit 3 and the gas pool are each connected to a pressure measuring sensor to detect the air pressure. Preferably, the pressure measuring sensor is a piezoresistive sensor, a piezoelectric sensor, a capacitive sensor, a thermistor sensor, or a resonant sensor, and more preferably a capacitive sensor, such as a thin film vacuum gauge.

[0050] This embodiment also provides a method for chemical ion modification of a metal-catalyzed non-thermal plasma reaction device, the method comprising the following steps:

[0051] Step 1. The gas pressure of the plasma reaction unit is maintained below 10 Pa by the exhaust unit;

[0052] Step 2. Open the reactant supply unit and control the flow rate to maintain the gas pressure within a suitable range, for example, within the range of 10-1500 Pa;

[0053] Step 3. Turn on the circulating cooling system and power supply of the magnetron sputtering unit, adjust the voltage to 200-500V, adjust the current to 0-2A, start the reaction, and control the reaction time to 1-120 minutes. The gas molecules are ionized into gas ions and then combine to form new compounds, resulting in a mixed gas of reactants and products, which is collected in a gas pool.

[0054] Step 4. Finally, the magnetron sputtering unit is turned off and the collected products are tested by methods such as gas chromatography, infrared spectroscopy, and mass spectrometry.

[0055] Finally, the present invention provides an application of the above-mentioned non-thermal plasma reaction device in performing reactions with high reaction energy barriers under mild conditions.

[0056] The following three specific embodiments are further provided in this embodiment:

[0057] Example 1

[0058] The reaction uses a Pt target, and N2 is introduced through the connecting pipe extending from the first connecting device 8 to maintain a nitrogen atmosphere. After the exhaust system creates a low-pressure environment (10Pa), CH4 and CO2 are introduced through the connecting pipe extending from the first connecting device 8. The capacitive pressure sensor connected to the third gas outlet 12 monitors the pressure in real time, and the flow meter is adjusted so that the total pressure is 600Pa, CH4:CO2:N2=1:2:5. Turn on the first magnetron sputtering unit 2 and the second magnetron sputtering unit 6, adjust the voltage to 380V, and the current to 90mA. Under the action of the two magnetron sputtering units, the target sputters a large amount of Pt as a catalyst, and the gas molecules are activated into CH3 which is more easily reactive. + 、N2*、H*、O2 - Particles such as ions collide with each other under the combined action of magnetic and electric fields to produce new compounds. After 6 minutes of reaction, the collected products are measured using infrared spectroscopy. Figure 6 , Figure 6 The upper middle side is the standard infrared spectrum of HCN, and the lower side is the infrared spectrum of the collected product in the corresponding band. It was found that HCN was generated. After calculation, the HCN yield was 9.33×10 -5After the reaction is completed, the exhaust system discharges the gas inside the plasma reaction unit through the first gas outlet 9 to reduce gas adsorption on the inner wall.

[0059] Example 2

[0060] The reaction uses an Al target, and N2 is introduced through the connecting pipe extending from the first connecting device 8 to maintain a nitrogen atmosphere. After the exhaust system creates a low pressure environment (10Pa), CH4 and CO2 are introduced through the connecting pipe extending from the first connecting device 8. The capacitive pressure sensor connected to the third gas outlet 12 monitors the pressure in real time, and the flow meter is adjusted so that the total pressure is 600Pa, CH4:CO2:N2=1:2:5. Turn on the magnetron sputtering unit 2 and the magnetron sputtering unit 6, adjust the voltage to 380V, and the current to 90mA. Under the action of the magnetron sputtering unit, the target sputters a large amount of Al as a catalyst, and the gas molecules are activated into CH3 which is more easily reactive. + 、N2*、H*、O2 - Particles such as ions collide with each other under the combined action of magnetic and electric fields to produce new compounds. After 6 minutes of reaction, the collected products are measured using infrared spectroscopy. Figure 7 , Figure 7 The upper middle part is the standard infrared spectrum of HCN, and the lower part is the infrared spectrum of the collected product in the corresponding band. HCN was found to be generated, and the HCN yield was calculated to be 6.82×10 -5 After the reaction is completed, the exhaust system discharges the gas inside the plasma reaction unit through the first gas outlet 9 to reduce gas adsorption on the inner wall.

[0061] Example 3

[0062] The reaction uses a Pt target, and carbonyl cobalt is placed in the sample pool 7 in the plasma reaction unit 3. N2 is introduced through the connecting pipe extending from the first connecting device 8 to maintain a nitrogen atmosphere. After the exhaust system creates a low-pressure environment (10Pa), N2 and H2 are introduced through the connecting pipe extending from the first connecting device 8. The capacitive air pressure sensor connected to the third gas outlet 12 monitors the air pressure in real time, and the flow meter is adjusted so that the total pressure is 1200Pa, N2:H2=3:1. After waiting for the carbonyl cobalt to volatilize completely, the magnetron sputtering unit 2 and the magnetron sputtering unit 6 are turned on, and the voltage is adjusted to 300V and the current is 90mA. Under the action of the magnetron sputtering unit, a large amount of Pt is sputtered out from the target material as a catalyst, and the carbonyl cobalt is decomposed into Co and CO, which are activated together with the gas molecules to become N2*, H*, and O2 that are more easily reacted. - Particles such as ions collide with each other under the combined action of magnetic and electric fields to produce new compounds. After 6 minutes of reaction, the collected products are measured using infrared spectroscopy. Figure 8 , Figure 8The upper middle part is the standard infrared spectrum of NH3, and the lower part is the infrared spectrum of the collected product in the corresponding band. It was found that NH3 was generated. After calculation, the NH3 production was 7.48×10 -5 After the reaction is completed, the exhaust system discharges the gas inside the plasma reaction unit through the first gas outlet 9 to reduce gas adsorption on the inner wall.

[0063] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0064] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0065] In the present invention, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection, or communication; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0066] In the present invention, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0067] In the present invention, the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples without contradiction.

[0068] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A metal-catalyzed non-thermal plasma reaction device, characterized in that: include: A plasma reaction unit (3), wherein the plasma reaction unit (3) has a receiving space for providing reaction gas for ionization and collision combination to form new compounds; a first connecting device (8), the first connecting device (8) being provided on the plasma reaction unit (3) and being used for connecting to a reactant supply unit; A second connecting device (11), the second connecting device (11) is provided on the plasma reaction unit (3) and is used for connecting to a gas chromatograph (GC-MS) or providing an observation window; a third connecting device (5), the third connecting device (5) being arranged on the plasma reaction unit (3) and having a first gas outlet (9) for connecting to an exhaust unit, a second gas outlet (10) for connecting to a gas pool, and a third gas outlet (12) for connecting to a gas pressure sensor; A first magnetron sputtering unit (2), the first magnetron sputtering unit (2) being arranged in the accommodation space of the plasma reaction unit (3) and being used for discharging to generate plasma and sputtering to generate metal particles for catalytic reaction; A sample pool (7) is provided in the accommodation space of the plasma reaction unit (3) and is used to introduce volatile species into the accommodation space as a catalyst or a supplement of reactants.

2. The metal catalytic non-thermal plasma reaction device according to claim 1, characterized in that: The accommodating space is formed by a structure capable of guiding, confining, and transmitting ions, and the accommodating space is an open space; The plasma reaction unit (3) and the gas pool are each connected to a gas pressure measuring sensor, and the gas pressure measuring sensor is a piezoresistive sensor, a piezoelectric sensor, a capacitive sensor, a thermal sensor or a resonance sensor.

3. The metal catalytic non-thermal plasma reaction device according to claim 1, characterized in that: It also includes at least one second magnetron sputtering unit (6), which is located in the accommodation space of the plasma reaction unit (3) and is used to cooperate with the first magnetron sputtering unit (2) to discharge and generate plasma and sputter to generate metal particles for catalytic reaction.

4. The metal catalytic non-thermal plasma reaction device according to claim 3, characterized in that: The second magnetron sputtering unit (6) is 80-120 mm away from the first magnetron sputtering unit (2); The plasma reaction unit (3) is also provided with a base (4).

5. The metal catalytic non-thermal plasma reaction device according to claim 3, characterized in that: The first magnetron sputtering unit (2) is connected via a CF150 standard flange, and the second magnetron sputtering unit (6) is connected via a CF16 (13) standard flange; The centers of the CF150 standard flange and the CF16 standard flange (13) are both provided with through holes for connecting a DC power supply and a cooling circulation system.

6. The metal-catalyzed non-thermal plasma reaction device according to claim 5, characterized in that: The first magnetron sputtering unit (2) and the second magnetron sputtering unit (6) both have grooves for fixing metal targets, and the diameter of the through holes ranges from 14 to 20 mm; The CF150 standard flange and / or the CF16 standard flange (13) are stainless steel flanges.

7. The metal-catalyzed non-thermal plasma reaction device according to claim 6, characterized in that: The reactant or catalyst is a single substance or compound in a gaseous, liquid or solid state at room temperature; the cooling method of the cooling circulation system is at least one of gas flow heat dissipation and liquid flow heat dissipation.

8. The metal catalytic non-thermal plasma reaction device according to claim 1, characterized in that: The reactant or catalyst is a single substance or compound that is in liquid or solid state at room temperature and can generate a vapor pressure of more than 10 Pa at room temperature; The reactant supply unit is configured as a reaction gas cylinder, the gas inlet is controlled by a ball valve, and the flow rate is controlled by a mass flow meter; The first connecting device (8) and the second connecting device (11) are arranged opposite to each other and both include a CF35 standard flange; the volume of the accommodating space is 5-8L, and the CF35 standard flange is a stainless steel flange; the third connecting device (5) is a flange including an organic glass observation window.

9. A method for chemical ion modification using the metal-catalyzed non-thermal plasma reaction device according to any one of claims 1 to 8, the method comprising the following steps: Step 1. The gas pressure of the plasma reaction unit is maintained below 10 Pa by the exhaust unit; Step 2. Open the reactant supply unit and control the flow rate to maintain the pressure within the range of 10-1500 Pa; Step 3. Turn on the circulating cooling system and power supply of the magnetron sputtering unit, adjust the voltage to 200-500V, adjust the current to 0-2A, start the reaction, and control the reaction time to 1-120 minutes. The gas molecules are ionized into gas ions and then combine to form new compounds, resulting in a mixed gas of reactants and products, which is collected in a gas pool. Step 4. Finally, the magnetron sputtering unit is turned off and the collected product is tested by one or more of gas chromatography, infrared spectroscopy, or mass spectrometry.

10. Use of the metal-catalyzed non-thermal plasma reaction device according to any one of claims 1 to 8 in carrying out reactions with high reaction energy barriers under mild conditions.

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