Adaptive control method for MOSFET gate drive

Abstract

The present application relates to the field of power electronics technology, and provides an adaptive control method for MOSFET gate drive. The method includes: configuring current intensity through a gate driver; processing the current intensity through a gate resistance prediction component to obtain a predicted resistance value; processing the current intensity through a gate drive duration prediction component to obtain a predicted drive duration; performing power consumption analysis based on the current intensity combined with the predicted drive duration to obtain a predicted drive power consumption value; when the predicted resistance value meets the threshold and the predicted drive duration is less than or equal to the threshold and the predicted drive power consumption value is less than or equal to the threshold, gate drive control is performed according to the current intensity. The present application solves the technical problems of low control efficiency and excessive power consumption due to the uncertainty of gate resistance and drive duration, and realizes the effect of automatically predicting and optimizing drive duration and power consumption by dynamically adjusting gate drive parameters, thereby improving the working efficiency and energy utilization of MOSFET.

Description

Technical Field

[0001] The present application relates to the field of power electronics technology, and in particular to an adaptive control method for MOSFET gate drive. Background Art

[0002] In modern power electronic systems, MOSFET is widely used in high-efficiency converters, inverters, motor drives and other occasions due to its superior switching performance and low conduction loss. Effective gate drive is the key to ensure that MOSFET can switch quickly, which not only affects the switching speed, but also directly affects the overall performance and power consumption of the circuit. The current gate drive control method mainly relies on experience to select parameters and lacks a refined adjustment mechanism. This approach results in the selection of drive voltage often failing to meet the actual needs under different working conditions, causing excessive losses in the MOSFET during the switching process, thereby increasing the energy consumption of the system. At the same time, because the fixed drive duration cannot adapt to load changes, it will also affect the stability of the switching frequency and reduce system efficiency. Summary of the invention

[0003] The present application provides an adaptive control method for MOSFET gate drive, aiming to solve the technical problems of low control efficiency and excessive power consumption caused by uncertainty of gate resistance and drive duration.

[0004] In view of the above problems, the present application provides an adaptive control method for MOSFET gate driving.

[0005] The present application provides an adaptive control method for MOSFET gate drive, the method comprising: configuring the first-stage current intensity, the second-stage current intensity, and the third-stage current intensity through a gate driver; processing the first-stage current intensity, the second-stage current intensity, and the third-stage current intensity through a MOSFET gate resistance prediction component to obtain a MOSFET gate predicted resistance value; processing the first-stage current intensity, the second-stage current intensity, and the third-stage current intensity through a MOSFET gate drive duration prediction component to obtain a MOSFET gate predicted drive duration; performing power consumption analysis based on the first-stage current intensity, the second-stage current intensity, and the third-stage current intensity in combination with the MOSFET gate predicted drive duration to obtain a driving power consumption prediction value; when the MOSFET gate predicted resistance value meets a resistance value threshold, and the MOSFET gate predicted drive duration is less than or equal to a drive duration threshold, and the driving power consumption prediction value is less than or equal to a driving power consumption threshold, performing MOSFET gate drive control based on the first-stage current intensity, the second-stage current intensity, and the third-stage current intensity.

[0006] One or more technical solutions provided in this application have at least the following technical effects or advantages:

[0007] The above-mentioned adaptive control method for MOSFET gate drive configures three different stages of current intensity through the gate driver to achieve precise driving of MOSFET. First, the three current intensities are analyzed using the MOSFET gate resistance prediction component to obtain the predicted gate resistance value. Then, the current intensity information is processed through the gate drive duration prediction component to calculate the predicted drive duration. On this basis, the power consumption analysis is performed in combination with the current intensity and the predicted drive duration to obtain the predicted drive power consumption value. When the predicted resistance value meets the set threshold, and the predicted drive duration and the power consumption prediction value are both within the allowable range, the MOSFET drive control is performed according to these current intensities. This method effectively improves the accuracy and response speed of the drive, ensures the fast switching of the MOSFET, and reduces energy consumption. At the same time, the real-time adaptive adjustment mechanism enables dynamic response to load changes and optimizes overall performance.

[0008] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0010] Figure 1 1 is a flow chart of an adaptive control method for MOSFET gate driving in one embodiment;

[0011] Figure 2 The present invention is a schematic diagram of a flow chart of obtaining a predicted driving duration of a MOSFET gate in an adaptive control method for a MOSFET gate drive in an embodiment. DETAILED DESCRIPTION

[0012] The embodiment of the present application solves the technical problems of low control efficiency and excessive power consumption caused by the uncertainty of gate resistance and driving duration by providing an adaptive control method for MOSFET gate drive.

[0013] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0014] It should be noted that the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or server that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or modules that are not explicitly listed or inherent to these processes, methods, products or devices.

[0015] Examples, such as Figure 1 As shown, the present application provides an adaptive control method for MOSFET gate drive, the method comprising:

[0016] The first stage current intensity, the second stage current intensity, and the third stage current intensity are configured through the gate driver.

[0017] In the embodiment of the present application, the system terminal sets three different current intensities through the driving requirements of the gate driver, namely the first stage current intensity, the second stage current intensity, and the third stage current intensity. These three current intensities represent different driving stages and can be flexibly adjusted according to actual needs, thereby optimizing the switching process and improving the overall efficiency of the system. At the same time, this strategy helps to effectively control energy consumption, avoid losses and heat caused by excessive current, and thus improve the service life and reliability of MOSFET.

[0018] Further, the present application provides configuring the first stage current intensity, the second stage current intensity, and the third stage current intensity through a gate driver, including:

[0019] When the driving requirement is to turn on: the current intensity of the first stage is used to provide the gate voltage to increase from 0V to the threshold voltage; the current intensity of the second stage is used to provide the gate voltage to increase from the threshold voltage to the Miller platform voltage; the current intensity of the third stage is used to provide the gate voltage to increase from the Miller platform voltage to the driving voltage; when the driving requirement is to turn off: the current intensity of the first stage is used to provide the gate voltage to decrease from the driving voltage to the Miller platform voltage; the current intensity of the second stage is used to provide the gate voltage to decrease from the Miller platform voltage to the threshold voltage; the current intensity of the third stage is used to provide the gate voltage to decrease from the threshold voltage to 0V.

[0020] Preferably, when the drive demand is on, the system terminal adjusts the gate voltage by setting the current intensity of three stages. The current intensity of the first stage starts from 0V and slowly increases the gate voltage until it reaches the threshold voltage, which is the minimum voltage required for the MOSFET to start turning on. This process ensures that the MOSFET can smoothly enter the on state and avoids delays caused by too low voltage. The current intensity of the second stage increases the gate voltage from the threshold voltage to the Miller platform voltage. This voltage level allows the MOSFET to remain stable when turned on to prevent unnecessary fluctuations. At this time, the conduction performance of the MOSFET is enhanced and prepared for subsequent operations. The current intensity of the third stage continues to increase the gate voltage from the Miller platform voltage to the drive voltage to ensure that the MOSFET operates in a fully on state to obtain the best conduction performance and the lowest conduction loss. When the drive demand is off, the operation process is also divided into three stages. The current intensity of the first stage is responsible for reducing the gate voltage from the drive voltage to the Miller platform voltage. This step ensures that the conduction of the MOSFET is gradually weakened, avoiding overshoot that may be caused by instantaneous shutdown. The current intensity in the second stage reduces the gate voltage from the Miller platform voltage to the threshold voltage, at which point the MOSFET is about to be completely turned off and the current begins to decrease significantly. The current intensity in the third stage reduces the gate voltage to 0V, ensuring that the MOSFET is completely turned off, preventing any leakage current, and minimizing energy consumption and heat generation. This staged current control method not only ensures the smoothness of the MOSFET switching process, but also improves the efficiency and reliability of the related power electronic systems.

[0021] The first-stage current intensity, the second-stage current intensity, and the third-stage current intensity are processed by a MOSFET gate resistance prediction component to obtain a MOSFET gate predicted resistance value.

[0022] In one embodiment, the main task of the MOSFET gate resistance prediction component is to analyze and process the current intensity data of the three stages to generate the predicted resistance value of the MOSFET gate, which is constructed through a neural network. The system terminal inputs the current intensity information of the first stage, the second stage and the third stage into the MOSFET gate resistance prediction component, and the MOSFET gate resistance prediction component processes the received current intensities to calculate the predicted resistance value of the MOSFET gate. This predicted resistance value reflects the gate resistance characteristics of the MOSFET under different working conditions, providing an important basis for subsequent drive control.

[0023] Further, the present application provides a method for processing the first-stage current intensity, the second-stage current intensity, and the third-stage current intensity through a MOSFET gate resistance prediction component to obtain a MOSFET gate predicted resistance value, including:

[0024] The MOSFET gate resistance prediction component includes a MOSFET gate on-resistance prediction component and a MOSFET gate off-resistance prediction component.

[0025] Preferably, the MOSFET gate resistance prediction component is composed of two sub-components, namely, the MOSFET gate on-resistance prediction component and the MOSFET gate off-resistance prediction component. Both components are constructed based on neural networks to achieve efficient and accurate resistance value prediction. When constructing the MOSFET gate resistance prediction component, the system terminal first collects the historical first-stage current intensity, the historical second-stage current intensity, the historical third-stage current intensity and the historical MOSFET gate predicted resistance value of the drive demand for conduction from the historical log, and divides these historical data to obtain a training set, a validation set and a test set, and then uses a fully connected neural network to construct a MOSFET gate on-resistance prediction component, including an input layer, a hidden layer, an output layer, etc. Subsequently, the weight of the MOSFET gate on-resistance prediction component is initialized using a random number or the like, and the training set is input into the initialized MOSFET gate on-resistance prediction component for forward propagation, and the MOSFET gate predicted resistance value is calculated by passing layer by layer. Afterwards, the loss value between the MOSFET gate predicted resistance value and the corresponding historical MOSFET gate predicted resistance value is calculated using the mean square error, and the gradient of the loss to the weight of each layer is calculated layer by layer by the back propagation algorithm. Then use the Adam optimizer or SGD to optimize the component parameters and adjust the weights to minimize the value of the loss function. Repeat the above process until the maximum number of iterations is reached. During the training process, the validation set is used to evaluate the component prediction loss. If the loss does not improve within several consecutive training rounds, the training is stopped to prevent overfitting. After the training is completed, the component performance is tested using the test set to evaluate the prediction accuracy of the component. If the accuracy meets the accuracy threshold, the current MOSFET gate on-resistance prediction component is output. Otherwise, the model structure (such as adding or reducing hidden layers) and hyperparameters (such as learning rate) further improve the prediction ability of the MOSFET gate on-resistance prediction component. For the MOSFET gate off resistance prediction component, the system terminal uses the same method as above to build it. After completing the construction of the MOSFET gate on resistance prediction component and the MOSFET gate off resistance prediction component, the system terminal integrates the two components to build a MOSFET gate resistance prediction component. Through the collaborative work of the two components, the gate drive parameters can be adjusted in real time to improve the accuracy and efficiency of the switching process.

[0026] When the driving requirement is to be turned on: the first-stage current intensity, the second-stage current intensity, and the third-stage current intensity are input into the MOSFET gate on-resistance prediction component for processing to obtain the MOSFET gate predicted resistance value; when the driving requirement is to be turned off: the first-stage current intensity, the second-stage current intensity, and the third-stage current intensity are input into the MOSFET gate off-resistance prediction component for processing to obtain the MOSFET gate predicted resistance value.

[0027] Preferably, when the drive demand is turned on, the system terminal inputs the current intensity data of the first stage, the second stage and the third stage into the MOSFET gate resistance prediction component, and the MOSFET gate resistance prediction component distributes these current intensity data to the MOSFET gate on-resistance prediction component through the drive demand label. This component will use the learned mapping relationship to analyze and process these current intensities and calculate the corresponding MOSFET gate predicted resistance value. This predicted resistance value reflects the resistance characteristics of the MOSFET in the on state, helps optimize the gate drive process, and ensures that the MOSFET can be turned on quickly and effectively. Correspondingly, when the drive demand is turned off, the current intensity of the first stage, the second stage and the third stage will also be allocated to the MOSFET gate off resistance prediction component. This component will process the input current data and calculate the MOSFET gate predicted resistance value in the off state. This predicted value will be used to optimize the shutdown process to ensure that the MOSFET can quickly reduce the on-current when it is turned off, improve efficiency and reduce energy consumption.

[0028] The first-stage current intensity, the second-stage current intensity, and the third-stage current intensity are processed by a MOSFET gate drive duration prediction component to obtain a MOSFET gate predicted drive duration.

[0029] In one embodiment, the system terminal analyzes and processes the current intensity data of the first stage, the second stage, and the third stage respectively through a pre-built MOSFET gate drive duration prediction component, calculates the predicted drive duration of the MOSFET gate, and provides an important basis for subsequent drive control, ensuring that the MOSFET can respond in time during the switching process and improve the switching efficiency. Among them, the MOSFET gate drive duration prediction component is also constructed based on a fully connected neural network, including a MOSFET gate conduction drive duration prediction component and a MOSFET gate off drive duration prediction component.

[0030] Further, if Figure 2As shown, the present application provides a method for processing the first stage current intensity, the second stage current intensity, and the third stage current intensity through a MOSFET gate drive duration prediction component to obtain a MOSFET gate predicted drive duration, including:

[0031] The MOSFET gate drive duration prediction component includes a first-stage drive duration prediction component, a second-stage drive duration prediction component and a third-stage drive duration prediction component; the first-stage current intensity is processed according to the first-stage drive duration prediction component to obtain the first-stage predicted drive duration; the first-stage current intensity and the second-stage current intensity are processed according to the second-stage drive duration prediction component to obtain the second-stage predicted drive duration; the first-stage current intensity, the second-stage current intensity and the third-stage current intensity are processed according to the third-stage drive duration prediction component to obtain the third-stage predicted drive duration; the first-stage predicted drive duration, the second-stage predicted drive duration and the third-stage predicted drive duration are added to the MOSFET gate predicted drive duration.

[0032] Preferably, the MOSFET gate conduction drive duration prediction component and the MOSFET gate closed drive duration prediction component in the MOSFET gate drive duration prediction component both include three subcomponents, namely, the first stage drive duration prediction component, the second stage drive duration prediction component and the third stage drive duration prediction component, which are responsible for the drive duration prediction of different stages respectively, and the construction method of each subcomponent is the same as the above. When analyzing the current intensity of the first stage, the current intensity of the second stage and the current intensity of the third stage, the first stage drive duration prediction component will receive the data of the current intensity of the first stage, and after processing, calculate the predicted drive duration of this stage, that is, the predicted drive duration of the first stage. This duration indicates the time required for the gate voltage to rise from 0V to the threshold voltage in this stage. The second stage drive duration prediction component simultaneously analyzes the current intensity of the first stage and the second stage, and calculates the predicted drive duration of the second stage. At this time, the component evaluates the time required for the current change to the voltage to rise from the threshold voltage to the Miller platform voltage to ensure the smooth progress of this process. The third stage drive duration prediction component will comprehensively analyze the current intensity of the first, second and third stages, and calculate the predicted drive duration of the third stage. This stage focuses on the time it takes for the voltage to rise from the Miller platform voltage to the drive voltage. Subsequently, the system terminal adds the predicted drive durations of the first, second, and third stages to the predicted drive duration of the MOSFET gate, providing an accurate basis for drive control, helping to optimize the switching process, improve efficiency, and ensure system stability and reliability.

[0033] According to the current intensity of the first stage, the current intensity of the second stage, and the current intensity of the third stage, power consumption analysis is performed in combination with the predicted driving time of the MOSFET gate to obtain a predicted driving power consumption value.

[0034] In one embodiment, the system terminal combines the current intensity of the first stage, the second stage, and the third stage with the corresponding MOSFET gate predicted driving duration to match the historical power consumption record. Subsequently, a centralized analysis is performed based on the matching results of each pair of current intensity and gate predicted driving duration to obtain the driving power consumption prediction value of each pair. Afterwards, all driving power consumption prediction values ​​are accumulated to obtain the final driving power consumption prediction value. This analysis result provides an important basis for subsequent drive control, helps optimize power consumption management, improves system efficiency, and reduces unnecessary energy waste.

[0035] Further, the present application provides a method for performing power consumption analysis based on the current intensity of the first stage, the current intensity of the second stage, and the current intensity of the third stage in combination with the predicted driving duration of the MOSFET gate to obtain a driving power consumption prediction value, including:

[0036] The predicted driving duration of the MOSFET gate includes the predicted driving duration of the first stage, the predicted driving duration of the second stage and the predicted driving duration of the third stage; according to the current intensity of the first stage and the predicted driving duration of the first stage, the historical power consumption record is matched to obtain a first historical power consumption record log, and the first historical power consumption record log is analyzed for a concentrated value to obtain a first-stage driving power consumption prediction value; according to the current intensity of the second stage and the predicted driving duration of the second stage, the historical power consumption record is matched to obtain a second historical power consumption record log, and the second historical power consumption record log is analyzed for a concentrated value to obtain a second-stage driving power consumption prediction value; according to the current intensity of the third stage and the predicted driving duration of the third stage, the historical power consumption record is matched to obtain a third historical power consumption record log, and the third historical power consumption record log is analyzed for a concentrated value to obtain a third-stage driving power consumption prediction value; the first-stage driving power consumption prediction value, the second-stage driving power consumption prediction value and the third-stage driving power consumption prediction value are added to generate the driving power consumption prediction value.

[0037] Optionally, the predicted driving duration of the MOSFET gate includes the predicted driving duration of the first stage, the second stage, and the third stage. The system terminal selects historical records similar to the first stage current intensity and the first stage predicted driving duration from the historical power consumption records according to the first stage current intensity and the first stage predicted driving duration. This process involves conditional query of historical data to ensure that the selected record is similar to the current operation, that is, the deviation between the historical first stage current intensity and the historical first stage predicted driving duration and the first stage current intensity and the first stage predicted driving duration is within a preset range. Subsequently, the matched historical records are integrated into a log as a first historical power consumption record log. The log contains multiple energy consumption data points under similar conditions, providing a basis for subsequent analysis. Afterwards, the first historical power consumption record log is subjected to a centralized value analysis, and commonly used statistical methods include calculating the mean, median, or mode. The purpose of this analysis is to extract a representative value from multiple energy consumption data to reflect the typical power consumption under a specific current intensity and driving duration. Through the centralized value analysis, the system terminal obtains the first stage driving power consumption prediction value. This first stage driving power consumption prediction value reflects the typical energy consumption of the MOSFET in the first stage under specific conditions. Similarly, the process of obtaining the predicted value of the driving power consumption in the second stage is to match the historical records according to the current intensity and predicted driving duration of the second stage. By generating a second historical power consumption record log, the log is analyzed for concentrated values ​​to obtain the predicted value of the driving power consumption in the second stage. For the third stage, the third historical power consumption record log is also matched according to the current intensity and predicted driving duration of the third stage, and a concentrated value analysis is performed on it to finally obtain the predicted value of the driving power consumption in the third stage. Then, the predicted values ​​of the driving power consumption of the first, second and third stages are added together to generate the overall predicted value of the driving power consumption. This comprehensive prediction provides a basis for optimizing the driving control, helps to improve the energy efficiency of the system, reduce power consumption, and ensure the performance and stability of the MOSFET in different operating stages.

[0038] When the predicted resistance value of the MOSFET gate meets the resistance value threshold, and the predicted driving duration of the MOSFET gate is less than or equal to the driving duration threshold, and the predicted driving power consumption value is less than or equal to the driving power consumption threshold, the MOSFET gate drive control is performed according to the current intensity of the first stage, the current intensity of the second stage, and the current intensity of the third stage.

[0039] In one embodiment, when the driving demand is turned on, if the predicted resistance value of the MOSFET gate is less than or equal to the set on-resistance value threshold, it means that the MOSFET can be turned on smoothly. At this time, the system terminal checks whether the predicted driving duration of the MOSFET gate is less than or equal to the set driving duration threshold, ensuring that the time during the conduction process is appropriate and avoiding excessive power consumption. At the same time, verify whether the predicted driving power consumption value is less than or equal to the set driving power consumption threshold to ensure that the energy consumption is within a safe range. If all conditions are met, the terminal performs MOSFET gate drive control according to the current intensity of the first stage, the second stage, and the third stage, and applies the corresponding current intensity in turn to achieve conduction. When the driving demand is turned off, if the predicted resistance value of the MOSFET gate is greater than the set off resistance value threshold, it means that the MOSFET can be safely turned off. At this time, the system terminal checks whether the predicted driving duration of the MOSFET gate is less than or equal to the set driving duration threshold to avoid excessive off time causing increased energy consumption. At the same time, verify whether the predicted driving power consumption value is less than or equal to the set driving power consumption threshold to ensure that the energy consumption is within an acceptable range during the off process. If all conditions are met, the system terminal controls the MOSFET gate drive according to the current intensity of the first, second and third stages, and gradually reduces the current intensity to achieve safe shutdown. Through this series of steps, the system terminal can optimize the MOSFET turn-on and turn-off process for different working scenarios to achieve efficient and safe control.

[0040] Further, the present application provides execution cycle analysis, including:

[0041] When the predicted resistance value of the MOSFET gate does not meet the resistance value threshold, or / and the predicted driving duration of the MOSFET gate is greater than the driving duration threshold, or / and the predicted driving power consumption value is greater than the driving power consumption threshold, the first stage current intensity or / and the second stage current intensity or / and the third stage current intensity are adjusted, and then a cyclic analysis is performed.

[0042] Preferably, when the predicted resistance value of the MOSFET gate does not meet the set resistance value threshold, or / and the predicted driving duration of the MOSFET gate exceeds the allowed driving duration threshold, or / and the predicted driving power consumption exceeds the set power consumption threshold, the system terminal adjusts the first stage current intensity or / and the second stage current intensity or / and the third stage current intensity to ensure that the on and off process of the MOSFET can be effectively controlled under various load conditions. After adjusting the current intensity, the system terminal will re-analyze and cyclically check whether the new current setting meets the requirements of each threshold. This process is intended to ensure that the adjusted current can adapt to the working requirements of the MOSFET. The working state of the MOSFET will be continuously monitored in each cyclic analysis, and the current intensity will be further optimized based on the feedback information. This dynamic adjustment mechanism ensures that the MOSFET can still maintain efficient and stable performance under variable working conditions.

[0043] Further, the present application provides execution cycle analysis, including:

[0044] When there is still no convergence after adjustment for k times, the first k driving control parameters are obtained; a driving control fitness function is constructed; according to the driving control fitness function, the fitness of the first k driving control parameters is evaluated, and then a particle swarm distribution space is constructed; according to the particle swarm distribution space, a particle swarm optimization is performed to obtain recommended driving control parameters, and a cyclic analysis is performed.

[0045] Optionally, after k adjustments, if the convergence state is still not reached, the system terminal records the drive control parameters of the previous k times. These parameters will be used to construct a drive control fitness function, which can evaluate the effect of the current drive control. Subsequently, the drive control fitness function is used to evaluate the fitness of the drive control parameters of the previous k times to analyze which parameter combinations are more effective. This process helps to identify the optimal drive control scheme. After that, based on the fitness evaluation results, a particle swarm distribution space is constructed, and particle swarm optimization is carried out on this basis. The particle swarm algorithm will find recommended drive control parameters by simulating multiple possible parameter combinations. Specifically, the system terminal will randomly generate a group of particles, each particle represents a possible combination of drive control parameters. Each particle has a position (parameter value) and a speed (adjustment step size). For the position of each particle, its fitness value is calculated by the drive control fitness function, and the fitness value reflects the effectiveness of the parameter combination in the drive control. In each iteration, the best position of each particle in history (individual best) and the best position of the entire particle group (group best) are tracked. This information is used to guide the particles to move in a more optimal direction. Then, based on the individual best and group best positions, the speed and position of each particle are updated, involving the current speed, the distance from the individual best position, and the distance from the group best position. Through these updates, the particles gradually approach a better parameter combination. The above steps will be repeated until the termination condition is met, such as reaching the maximum number of iterations or the fitness value reaches a predetermined threshold. Finally, the system terminal will select the drive control parameters represented by the particle with the highest fitness as the recommended drive control parameters based on the optimization results of the particle swarm. The recommended parameters obtained will be used to perform cyclic analysis to further optimize the control process and ensure that the drive effect of the MOSFET is optimal.

[0046] Furthermore, the present application provides a drive control fitness function, including when Dissatisfied ,and ,and hour, ;

[0047] when satisfy ,and ,and hour, ;

[0048] when Dissatisfied ,and ,and hour, ;

[0049] when Dissatisfied ,and ,and hour, ;

[0050] when Dissatisfied ,and ,and hour, ;

[0051] when satisfy ,and ,and hour, ;

[0052] when satisfy ,and ,and hour, .

[0053] Optionally, in the MOSFET drive control process, in order to achieve accurate control optimization, it is necessary to conduct a comprehensive analysis of multiple parameters and construct a drive control fitness function based on these parameters. , which is used to evaluate the effectiveness of the current drive control parameters. Dissatisfied ,and ,and When , the driving control fitness function is: ;when satisfy ,and ,and When , the driving control fitness function is: ;when Dissatisfied ,and ,and When , the driving control fitness function is: ;when Dissatisfied ,and When , the driving control fitness function is: ;when Dissatisfied ,and ,and When , the driving control fitness function is: ;when satisfy ,and ,and When , the driving control fitness function is: ;when satisfy ,and ,and When , the driving control fitness function is: .in,, Characterization A driving control parameter, which is the evaluation target of the entire fitness function. Characterization The predicted resistance of a drive control parameter represents the resistance state of the MOSFET and reflects the drive control effect. Characterizes the resistance threshold, used to determine the current resistance Whether the standard requirements are met. Characterization The first drive control parameter The stage predicted driving duration is the driving time of each stage. Characterizes the driving time threshold, which is used to ensure that the driving time is within a reasonable range and avoid efficiency reduction caused by excessive driving time. Characterization The predicted power consumption of each drive control parameter indicates the energy consumption under the current drive condition. Characterizes the power consumption threshold, which is used to control the energy consumption during the driving process to ensure that the energy efficiency meets the standard. , and The weights of resistance, driving time and power consumption respectively reflect the influence of different parameters on the control drive. Through these formulas, the system terminal can dynamically optimize the drive control parameters according to the current resistance, driving time and power consumption prediction values, thereby ensuring the stability and efficiency of MOSFET under different working conditions.

[0054] In summary, the embodiments of the present application have at least the following technical effects:

[0055] The embodiment of the present application configures the current intensity of three stages through the gate driver, and then processes the current intensity of each stage through the MOSFET gate resistance prediction component to obtain the gate prediction resistance value of the MOSFET. Subsequently, the current intensity is processed by the driving duration prediction component to obtain the gate prediction driving duration of the MOSFET, and the power consumption analysis is performed in combination with these data to obtain the driving power consumption prediction value. When the resistance value, driving duration and power consumption prediction value of the MOSFET gate meet the preset threshold value, the drive control is performed according to the current intensity of each stage. If these parameters do not meet expectations, the current intensity of each stage is automatically adjusted, and a cyclic analysis is performed to further optimize the control. By accurately controlling the current changes at different stages during the on and off process, the working requirements of the MOSFET can be better adapted to optimize power consumption and efficiency. In addition, if convergence is still not achieved after multiple adjustments, a fitness function will be constructed, and the optimal drive control parameters will be found in the parameter space by the particle swarm optimization algorithm to achieve further cyclic analysis and optimization. These technical effects jointly solve the technical problems of low control efficiency and excessive power consumption caused by the uncertainty of gate resistance and driving time, and achieve the effect of improving the working efficiency and energy utilization of MOSFET by dynamically adjusting gate drive parameters, automatically predicting and optimizing driving time and power consumption.

[0056] It should be noted that the above-mentioned sequence of the embodiments of the present application is only for description and does not represent the advantages and disadvantages of the embodiments. And the above-mentioned specific embodiments of this specification are described. The processes depicted in the accompanying drawings do not necessarily require the specific order and continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0057] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

[0058] This specification and drawings are merely exemplary illustrations of the present application and are deemed to cover any and all modifications, variations, combinations or equivalents within the scope of the present application. Obviously, a person skilled in the art may make various modifications and variations to the present application without departing from the scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the present application and its equivalents, the present application intends to include these modifications and variations.

Claims

1. An adaptive control method for MOSFET gate drive, characterized in that: include: Through the gate driver, the first stage current intensity, the second stage current intensity, and the third stage current intensity are configured; The first-stage current intensity, the second-stage current intensity, and the third-stage current intensity are processed by a MOSFET gate resistance prediction component to obtain a MOSFET gate predicted resistance value; The first-stage current intensity, the second-stage current intensity, and the third-stage current intensity are processed by a MOSFET gate drive duration prediction component to obtain a MOSFET gate predicted drive duration; According to the current intensity of the first stage, the current intensity of the second stage, and the current intensity of the third stage, combined with the predicted driving time of the MOSFET gate, power consumption analysis is performed to obtain a predicted driving power consumption value; When the predicted resistance value of the MOSFET gate meets the resistance value threshold, and the predicted driving duration of the MOSFET gate is less than or equal to the driving duration threshold, and the predicted driving power consumption value is less than or equal to the driving power consumption threshold, the MOSFET gate driving control is performed according to the current intensity of the first stage, the current intensity of the second stage, and the current intensity of the third stage; Through the gate driver, the first stage current intensity, the second stage current intensity, and the third stage current intensity are configured, including: When the drive requirement is on: The current intensity in the first stage is used to provide a gate voltage increasing from 0V to a threshold voltage; The second stage current intensity is used to provide a gate voltage that increases from the threshold voltage to the Miller platform voltage; The third stage current intensity is used to provide a gate voltage that increases from the Miller platform voltage to a driving voltage; When the drive demand is off: The first stage current intensity is used to provide a gate voltage that decreases from the driving voltage to the Miller platform voltage; The second stage current intensity is used to provide a gate voltage that decreases from the Miller platform voltage to the threshold voltage; The third stage current intensity is used to provide a gate voltage that decreases from the threshold voltage to 0V.

2. The method according to claim 1, characterized in that Also includes: When the predicted resistance value of the MOSFET gate does not meet the resistance value threshold, or / and the predicted driving duration of the MOSFET gate is greater than the driving duration threshold, or / and the predicted driving power consumption value is greater than the driving power consumption threshold, the first stage current intensity or / and the second stage current intensity or / and the third stage current intensity are adjusted, and then a cyclic analysis is performed.

3. The method according to claim 1, characterized in that The first-stage current intensity, the second-stage current intensity, and the third-stage current intensity are processed by a MOSFET gate resistance prediction component to obtain a MOSFET gate predicted resistance value, including: The MOSFET gate resistance prediction component includes a MOSFET gate on-resistance prediction component and a MOSFET gate off-resistance prediction component; When the drive requirement is on: Input the current intensity of the first stage, the current intensity of the second stage, and the current intensity of the third stage into the MOSFET gate on-resistance prediction component for processing to obtain the MOSFET gate predicted resistance value; When the drive demand is off: The first-stage current intensity, the second-stage current intensity, and the third-stage current intensity are input into the MOSFET gate-off resistance prediction component for processing to obtain the MOSFET gate predicted resistance value.

4. The method according to claim 1, characterized in that The first-stage current intensity, the second-stage current intensity, and the third-stage current intensity are processed by a MOSFET gate drive duration prediction component to obtain a MOSFET gate predicted drive duration, including: The MOSFET gate drive duration prediction component includes a first-stage drive duration prediction component, a second-stage drive duration prediction component and a third-stage drive duration prediction component; Processing the first-stage current intensity according to the first-stage driving duration prediction component to obtain the first-stage predicted driving duration; Processing the first-stage current intensity and the second-stage current intensity according to the second-stage driving duration prediction component to obtain a second-stage predicted driving duration; Processing the first-stage current intensity, the second-stage current intensity and the third-stage current intensity according to the third-stage driving duration prediction component to obtain a third-stage predicted driving duration; The first-stage predicted driving duration, the second-stage predicted driving duration and the third-stage predicted driving duration are added to the MOSFET gate predicted driving duration.

5. The method according to claim 4, characterized in that According to the current intensity of the first stage, the current intensity of the second stage, and the current intensity of the third stage, power consumption analysis is performed in combination with the predicted driving time of the MOSFET gate to obtain a driving power consumption prediction value, including: The predicted driving duration of the MOSFET gate includes the predicted driving duration of the first stage, the predicted driving duration of the second stage and the predicted driving duration of the third stage; Matching historical power consumption records according to the current intensity of the first stage and the predicted driving duration of the first stage to obtain a first historical power consumption record log, and performing centralized value analysis on the first historical power consumption record log to obtain a predicted value of driving power consumption in the first stage; Match the historical power consumption record according to the second-stage current intensity and the second-stage predicted driving duration to obtain a second historical power consumption record log, and perform a centralized value analysis on the second historical power consumption record log to obtain a second-stage driving power consumption prediction value; Matching historical power consumption records according to the third stage current intensity and the third stage predicted driving duration to obtain a third historical power consumption record log, and performing centralized value analysis on the third historical power consumption record log to obtain a third stage driving power consumption prediction value; The driving power consumption prediction value of the first stage, the driving power consumption prediction value of the second stage and the driving power consumption prediction value of the third stage are added together to generate the driving power consumption prediction value.

6. The method according to claim 2, characterized in that Also includes: When it has not converged after k adjustments, the driving control parameters of the first k times are obtained; Construct drive control fitness function; After evaluating the fitness of the first k driving control parameters according to the driving control fitness function, a particle swarm distribution space is constructed; Particle swarm optimization is performed according to the particle swarm distribution space to obtain recommended drive control parameters and perform cyclic analysis.

7. The method according to claim 6, characterized in that The drive control fitness function is: when Dissatisfied ,and ,and hour, ; when satisfy ,and ,and hour, ; when Dissatisfied ,and ,and hour, ; when Dissatisfied ,and ,and hour, ; when Dissatisfied ,and ,and hour, ; when satisfy ,and ,and hour, ; when satisfy ,and ,and hour, ; in, Characterization drive control parameters, Characterization The predicted resistance of the drive control parameters, Characterize the resistance threshold, Characterization The first drive control parameter Stage prediction driving duration, Characterize the driving time threshold, Characterization The predicted power consumption of each drive control parameter, Characterize the power consumption threshold, , and Characterize the weight.

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