Adaptive voltage regulation method for MOSFET

Abstract

The present invention discloses an adaptive voltage regulation method for MOSFET, and relates to the field of semiconductor device control technology. The method comprises: monitoring a first signal to be amplified in a signal amplification circuit, identifying signal characteristics; detecting component status information of a MOSFET in the signal amplification circuit; inputting the signal characteristics and component status information into a gain adaptive matching module, and obtaining a gain matching result; if the gain matching result is a pass, the bias circuit is not activated; if the gain matching result is a fail, the bias circuit is activated, and adaptive feedback analysis is performed according to the gain adaptive matching module, and an adaptive gate voltage is obtained, and the gate of the MOSFET is voltage-regulated. The method solves the technical problem that the MOSFET signal amplification circuit in the prior art is difficult to adapt to the dynamically changing signal characteristics, resulting in low signal amplification quality, and achieves the technical effect of improving the signal amplification quality by dynamically adjusting the gate voltage.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor device control, and in particular to an adaptive voltage regulation method for MOSFET. Background Art

[0002] In the rapidly developing field of electronic technology and communications, the performance of signal amplification circuits, as key components, directly affects the stability and efficiency of the entire system. As the core component in the signal amplification circuit, the optimization of the working state of the metal oxide semiconductor field effect transistor (MOSFET) is crucial to improving the quality of signal amplification. However, when facing complex and changing signal environments, traditional MOSFET signal amplification circuits often have problems such as inflexible gain adjustment and difficulty in quickly responding to signal changes, which may lead to adverse consequences such as signal distortion and increased noise. Summary of the invention

[0003] The present application provides an adaptive voltage regulation method for MOSFET, which solves the technical problem in the prior art that the MOSFET signal amplification circuit is difficult to adapt to dynamically changing signal characteristics, resulting in low signal amplification quality.

[0004] In view of the above problems, the present application provides an adaptive voltage regulation method for MOSFET.

[0005] The present application provides an adaptive voltage regulation method for MOSFET, the method comprising:

[0006] The first signal to be amplified of the signal amplification circuit is monitored, and signal characteristics are identified, including signal amplitude, signal frequency and signal gain; component state information of the MOSFET in the signal amplification circuit is detected, wherein the first signal to be amplified is amplified by the MOSFET; the signal characteristics and the component state information are input into a gain adaptive matching module to obtain a gain matching result, wherein the gain matching result includes a match pass and a match fail; if the gain matching result is a match pass, the bias circuit is not activated; if the gain matching result is a match fail, the bias circuit is activated, and an adaptive feedback analysis is performed according to the gain adaptive matching module to obtain an adaptive gate voltage, and the gate voltage of the MOSFET is adjusted by the adaptive gate voltage.

[0007] One or more technical solutions provided in this application have at least the following technical effects or advantages:

[0008] First, the first signal to be amplified in the signal amplification circuit is monitored to identify the signal characteristics, including signal amplitude, signal frequency and signal gain. Next, the component state information of the MOSFET in the signal amplification circuit is detected, wherein the first signal to be amplified is amplified by the MOSFET. Then, the signal characteristics and component state information are input into the gain adaptive matching module to obtain the gain matching result, wherein the gain matching result includes matching pass and matching fail. If the gain matching result is matching pass, the bias circuit is not activated; if the gain matching result is matching fail, the bias circuit is activated, and adaptive feedback analysis is performed according to the gain adaptive matching module to obtain the adaptive gate voltage, and the gate of the MOSFET is voltage-regulated with the adaptive gate voltage. The technical problem that the MOSFET signal amplification circuit in the prior art is difficult to adapt to the dynamically changing signal characteristics, resulting in low signal amplification quality, is solved, and the technical effect of improving the signal amplification quality is achieved by dynamically adjusting the gate voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0010] Figure 1 A schematic flow chart of an adaptive voltage regulation method for MOSFET provided in an embodiment of the present application;

[0011] Figure 2 A schematic diagram of a flow chart for obtaining a gain matching result in an adaptive voltage regulation method for MOSFET provided in an embodiment of the present application. DETAILED DESCRIPTION

[0012] The present application solves the technical problem in the prior art that the MOSFET signal amplification circuit is difficult to adapt to dynamically changing signal characteristics, resulting in low signal amplification quality, by providing an adaptive voltage regulation method for MOSFET.

[0013] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0014] It should be noted that the terms "including" and "having" are intended to cover non-exclusive inclusions. For example, a process, method, system, product or server that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or modules that are not explicitly listed or are inherent to these processes, methods, products or devices.

[0015] Examples, such as Figure 1 As shown, the embodiment of the present application provides an adaptive voltage regulation method for MOSFET, wherein the method includes:

[0016] The first signal to be amplified of the signal amplification circuit is monitored, and signal characteristics are identified, including signal amplitude, signal frequency, and signal gain.

[0017] By real-time monitoring of the signal amplification circuit, the first signal to be amplified is obtained, and the first signal to be amplified refers to the original signal to be amplified; the first signal to be amplified is processed based on the signal processing technology to identify the signal characteristics of the first signal to be amplified, including signal amplitude, signal frequency and signal gain. Among them, the signal amplitude represents the voltage strength of the signal; the signal frequency refers to the number of periodic changes of the signal in a unit time; the signal gain refers to the amplification factor of the signal amplitude by the amplifier circuit, that is, the ratio of the output signal amplitude to the input signal amplitude.

[0018] Detecting the component state information of the MOSFET in the signal amplification circuit, wherein the first signal to be amplified is amplified by the MOSFET.

[0019] In the signal amplification circuit, MOSFET (metal oxide semiconductor field effect transistor) is the core component, and its working state directly affects the amplification effect of the signal. The working state of MOSFET is affected by many factors, including gate voltage, drain voltage, source voltage, temperature and current, etc. The changes of these factors will directly affect the conductivity of MOSFET, and then affect the quality of signal amplification. By detecting the component status information of MOSFET, the working state of MOSFET can be grasped in real time, and corresponding adjustments can be made as needed to ensure the stability and accuracy of signal amplification. Sensors such as temperature sensors and current sensors are installed near MOSFET to monitor the temperature, current and voltage status of various performance indicators of MOSFET in the current working state in real time, so as to obtain the component status information of MOSFET.

[0020] The signal characteristics and the component status information are input into a gain adaptive matching module to obtain a gain matching result, wherein the gain matching result includes a matching pass and a matching fail.

[0021] In the adaptive adjustment process of the signal amplification circuit, the signal characteristics and the MOSFET component state information are input into the gain adaptive matching module; the gain adaptive matching module correlates and analyzes the signal characteristics (such as signal amplitude and signal frequency) with the MOSFET component state information (such as gate voltage, drain current, temperature, etc.) to evaluate whether the gain performance under the current circuit configuration meets the requirements; after being processed by the gain adaptive matching module, the gain matching result is output, and the gain matching result includes a match pass and a match fail; a match pass indicates that under the current signal characteristics and MOSFET component state, the gain performance of the signal amplification circuit meets the requirements; a match fail indicates that the gain performance of the current signal amplification circuit cannot meet the requirements.

[0022] Furthermore, if Figure 2 As shown, the signal characteristics and the component state information are input into a gain adaptive matching module to obtain a gain matching result, and the method includes:

[0023] The gain adaptive matching module obtains the target gain according to the signal characteristics; the gain adaptive matching module performs gain prediction according to the component state information to obtain the predicted gain; by comparing the target gain and the predicted gain, if the gain error between the target gain and the predicted gain is less than a preset threshold, the matching is passed; if the gain error between the target gain and the predicted gain is greater than the preset threshold, the matching is failed.

[0024] Specifically, the gain adaptive matching module determines the target gain according to the input signal characteristics (such as signal amplitude, signal frequency, etc.). The target gain refers to the expected gain level, which is used to ensure that the quality of the signal after amplification meets the application requirements; then, the gain adaptive matching module will perform gain prediction based on the input MOSFET component state information (such as gate voltage, drain current, temperature, etc.) to obtain the predicted gain. The predicted gain refers to the gain level that can be achieved by the circuit under the current component state; the gain error between the target gain and the predicted gain is calculated. The gain error is the difference between the target gain and the predicted gain, which is used to evaluate whether the current circuit configuration can meet the gain requirements of the system; if the calculated gain error is less than the preset threshold, the matching is considered to be successful, which means that under the current signal characteristics and component state, the circuit can approach or reach the expected gain level of the system; if the gain error is greater than the preset threshold, the matching is considered to be unsuccessful, which means that the gain performance under the current circuit configuration cannot meet the requirements.

[0025] Furthermore, the gain adaptive matching module performs gain prediction according to the component state information, and the method includes:

[0026] According to the element state information, the transconductance and load resistance of the MOSFET are calculated; and the expression for predicting the transconductance gain output according to the transconductance and the load resistance is: ;in, is the transconductance of the MOSFET, indicating the drain current Relative to gate voltage The rate of change, is the load resistance.

[0027] Specifically, the transconductance and load resistance of the MOSFET are calculated based on the component status information; the transconductance represents the rate of change of the drain current when the gate voltage changes, which can be expressed as Relative to gate voltage The partial derivative of is expressed as ,in, is the transconductance of MOSFET; the load resistance is the equivalent resistance of the load connected to the output of MOSFET, and the value of the load resistance will also affect the gain of the circuit; the predicted gain of MOSFET Transconductance With load resistance The product of In the gain adaptive matching module, the module calculates the current transconductance and load resistance based on the component status information (such as the gate voltage, drain current, temperature, etc. of the MOSFET) and other parameters of the circuit (such as the value of the load resistor); then, the gain prediction expression is used to calculate the gain of the circuit; finally, this predicted gain is compared with the target gain to determine whether the current circuit configuration meets the gain requirements.

[0028] Further, outputting a predicted gain according to the transconductance and the load resistance transconductance, the method further includes:

[0029] The temperature of the MOSFET is sensed by a temperature sensor to obtain a real-time temperature; if the real-time temperature is greater than a preset threshold, a temperature loss is introduced to optimize the prediction gain, and the optimized prediction gain is output.

[0030] Preferably, a temperature sensor (such as a thermistor, a thermocouple, or a temperature sensor integrated in the MOSFET package) is used to monitor the real-time temperature of the MOSFET to obtain the real-time temperature; the real-time temperature is compared with a preset threshold value, which is set according to the MOSFET data sheet and experimental data to determine whether the current temperature will have a significant impact on the performance of the MOSFET; if the real-time temperature is greater than the preset threshold value, it means that the MOSFET is in a high temperature state, which may cause adverse effects such as reduced transconductance and increased leakage current, thereby affecting the gain of the circuit.

[0031] In order to predict the gain more accurately, it is necessary to introduce temperature loss to optimize the predicted gain. Specifically, according to the data sheet or experimental data of MOSFET, find or calculate the coefficients of transconductance, leakage current and other parameters that change with temperature; use the temperature coefficient to correct the transconductance, that is, multiply the temperature coefficient by the transconductance to obtain the actual value of the transconductance at high temperature; use the corrected transconductance and load resistance to recalculate the predicted gain to obtain the optimized predicted gain. By introducing temperature sensors and temperature loss optimization, the gain adaptive matching module can more comprehensively consider the impact of the working state of MOSFET on the gain, thereby improving the accuracy and reliability of gain prediction.

[0032] If the gain matching result is matching passed, the bias circuit is not activated.

[0033] If the gain matching result is matched passed, it means that under the current signal characteristics and component status, the gain performance of the circuit has met the requirements, so there is no need to activate the bias circuit for adjustment.

[0034] If the gain matching result is a match failure, the bias circuit is activated, an adaptive feedback analysis is performed according to the gain adaptive matching module, an adaptive gate voltage is obtained, and the gate voltage of the MOSFET is adjusted by the adaptive gate voltage.

[0035] If the gain matching result is a match failure, it means that the gain performance under the current circuit configuration cannot meet the requirements. It is necessary to activate the bias circuit and perform adaptive feedback analysis according to the gain adaptive matching module to obtain a suitable adaptive gate voltage to adjust the gate voltage of the MOSFET to ensure that the MOSFET is always in the best state during signal amplification, thereby providing better gain performance. Through the above steps, the gain adaptive matching module can automatically adjust the gate voltage of the MOSFET to adapt to different signal characteristics and component state changes, thereby ensuring that the circuit can always maintain good gain performance.

[0036] Furthermore, the bias circuit is used to perform feedback regulation on the gate voltage of the MOSFET, and the bias circuit includes a power supply voltage, a resistor divider circuit and a source feedback resistor; wherein the power supply voltage provides a bias for the gate voltage of the MOSFET, the resistor divider circuit is used to stabilize the bias provided by the power supply voltage, and the source feedback resistor is connected between the source of the MOSFET and ground.

[0037] The bias circuit includes a power supply voltage, a resistor divider circuit, and a source feedback resistor. The various components in the bias circuit work together to achieve precise feedback regulation of the MOSFET gate voltage. The bias circuit is designed to ensure that the MOSFET can operate at a stable operating point, while being able to perform adaptive adjustments as needed to optimize the circuit's gain performance. The power supply voltage is the core of the bias circuit. It provides the initial bias voltage for the gate of the MOSFET. The bias voltage is the basis for the normal operation of the MOSFET. Its size is usually determined according to the specifications of the MOSFET and the circuit design requirements. The resistor divider circuit is connected between the power supply voltage and the gate of the MOSFET to stabilize the bias provided by the power supply voltage. By reasonably selecting the resistance value and ratio of the resistor, the resistor divider circuit can divide the power supply voltage into a voltage range suitable for the gate of the MOSFET, thereby protecting the MOSFET from excessively high or low gate voltages and ensuring the stability of the circuit. The source feedback resistor is connected between the source and ground of the MOSFET. The source feedback resistor is intended to introduce a negative feedback mechanism to stabilize the operating point of the MOSFET and improve the performance of the circuit. When the drain current of the MOSFET changes, the voltage drop on the source feedback resistor will also change accordingly. This change will be fed back to the gate of the MOSFET, thereby affecting the gate voltage. By adjusting the resistance value of the source feedback resistor, precise control of the MOSFET gain and stability can be achieved.

[0038] During the gain adaptive matching process, these components of the bias circuit work together to respond to the instructions of the gain adaptive matching module. When the gain matching result is a match failure, the gain adaptive matching module calculates the adaptive gate voltage that needs to be adjusted and adjusts the MOSFET gate voltage by controlling the relevant components in the bias circuit (such as a variable resistor or voltage source).

[0039] Furthermore, the resistor voltage divider circuit includes a pull-up resistor and a pull-down resistor; wherein the pull-up resistor is connected between the power supply voltage and the gate of the MOSFET, and the pull-down resistor is connected between the gate of the MOSFET and ground, and the pull-up resistor and the pull-down resistor perform voltage division.

[0040] In the bias circuit, the resistor voltage divider circuit is used to stabilize the gate voltage of the MOSFET and ensure that it works at the appropriate bias point. The resistor voltage divider circuit includes a pull-up resistor and a pull-down resistor, which work together to achieve voltage division and stabilization. The pull-up resistor is connected between the power supply voltage and the gate of the MOSFET. The main function of the pull-up resistor is to pull the gate voltage to the power supply voltage and provide a positive bias voltage for the MOSFET; by adjusting the resistance value of the pull-up resistor, the size of the gate voltage can be controlled, thereby affecting the working state of the MOSFET; the pull-down resistor is connected between the gate of the MOSFET and the ground. The function of the pull-down resistor is to pull the gate voltage to the ground potential and provide a negative bias path for the MOSFET; when the pull-down resistor is used in conjunction with the pull-up resistor, they can jointly determine the stable value of the gate voltage.

[0041] When the power supply voltage is applied to the bias circuit, the pull-up resistor and the pull-down resistor form a voltage divider network; according to Ohm's law and the voltage division principle of the series circuit, the gate voltage will be between the power supply voltage and the ground potential, and the specific value depends on the resistance ratio of the pull-up resistor and the pull-down resistor; by adjusting the resistance values ​​of the pull-up resistor and the pull-down resistor, the gate voltage can be accurately controlled to meet the circuit's requirements for the MOSFET operating point.

[0042] Furthermore, if the gain matching result is a match failure, the bias circuit is activated to perform PID adaptive feedback analysis, and the expression is as follows: ;in, is the adaptive gate voltage, is the previous gate voltage, is the proportional gain coefficient, which represents the direct effect of the gain error on the gate voltage, is the gain error between the target gain and the predicted gain, is the integral gain factor, used to avoid steady-state errors, is the accumulated gain error over the past period of time, is the differential gain coefficient, is the differential of the gain error, which represents the rate of change of the gain error over time.

[0043] Preferably, when the gain matching result is a match failure, a PID (proportional-integral-differential) adaptive feedback analysis can be used to dynamically adjust the gate voltage of the MOSFET to achieve more accurate gain control. Calculate the adaptive gate voltage, where is the adaptive gate voltage, is the gate voltage before adjustment, is the proportional gain coefficient, which represents the direct effect of the gain error on the gate voltage, is the gain error between the target gain and the predicted gain, is the integral gain factor, used to avoid steady-state errors, is the accumulated gain error over the past period of time, is the differential gain coefficient, is the differential of the gain error, which represents the rate of change of the gain error over time.

[0044] Furthermore, the adaptive gate voltage regulates the gate voltage of the MOSFET, and the method includes:

[0045] The bias circuit is connected to a DAC module, and the adaptive gate voltage is converted into an analog gate voltage signal through the DAC module; the analog gate voltage signal is transmitted to the output end of the bias circuit to adjust the voltage of the gate of the MOSFET.

[0046] As the core part of voltage regulation, the bias circuit is closely connected with the DAC (digital-to-analog converter) module, which is responsible for converting digital signals into analog signals to achieve precise control of the gate voltage. The input of the DAC module receives the digital signal from the controller (i.e., the digital representation of the adaptive gate voltage), and then converts it into the corresponding analog gate voltage signal. The generated analog gate voltage signal is then transmitted to the output of the bias circuit, where the signal is further processed (such as filtering, amplification, etc.) to ensure its stability and accuracy. The output of the bias circuit is directly connected to the gate of the MOSFET. When the analog gate voltage signal reaches the output, it is applied to the gate of the MOSFET, thereby achieving the regulation of the gate voltage. By changing the size of the analog gate voltage signal, the conduction state and operating characteristics of the MOSFET, such as current amplification, switching speed, etc., can be controlled.

[0047] In summary, the embodiments of the present application have at least the following technical effects:

[0048] First, the first signal to be amplified in the signal amplification circuit is monitored to identify the signal characteristics, including signal amplitude, signal frequency and signal gain. Next, the component state information of the MOSFET in the signal amplification circuit is detected, wherein the first signal to be amplified is amplified by the MOSFET. Then, the signal characteristics and component state information are input into the gain adaptive matching module to obtain the gain matching result, wherein the gain matching result includes matching pass and matching fail. If the gain matching result is matching pass, the bias circuit is not activated; if the gain matching result is matching fail, the bias circuit is activated, and adaptive feedback analysis is performed according to the gain adaptive matching module to obtain the adaptive gate voltage, and the gate of the MOSFET is voltage-regulated with the adaptive gate voltage. The technical problem that the MOSFET signal amplification circuit in the prior art is difficult to adapt to the dynamically changing signal characteristics, resulting in low signal amplification quality, is solved, and the technical effect of improving the signal amplification quality is achieved by dynamically adjusting the gate voltage.

[0049] It should be noted that the above-mentioned sequence of the embodiments of the present application is only for description and does not represent the advantages and disadvantages of the embodiments. And the above-mentioned specific embodiments of this specification are described. The processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0050] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

[0051] This specification and drawings are merely exemplary illustrations of the present application and are deemed to cover any and all modifications, variations, combinations or equivalents within the scope of the present application. Obviously, a person skilled in the art may make various modifications and variations to the present application without departing from the scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the present application and its equivalents, the present application intends to include these modifications and variations.

Claims

1. An adaptive voltage regulation method for MOSFET, characterized in that: The method comprises: Monitoring a first signal to be amplified in a signal amplifying circuit, and identifying signal characteristics, including signal amplitude, signal frequency, and signal gain; Detecting component state information of a MOSFET in the signal amplification circuit, wherein the first signal to be amplified is amplified by the MOSFET; Inputting the signal characteristics and the component status information into a gain adaptive matching module to obtain a gain matching result, the method comprising: The gain adaptive matching module obtains the target gain according to the signal characteristics; The gain adaptive matching module performs gain prediction according to the component state information to obtain a predicted gain; By comparing the target gain and the predicted gain, if the gain error between the target gain and the predicted gain is less than a preset threshold, the match is passed; If the gain error between the target gain and the predicted gain is greater than a preset threshold, the matching fails; The component status information includes gate voltage, drain current, and temperature; Wherein, the gain matching result includes matching passed and matching failed; If the gain matching result is a match pass, the bias circuit is not activated; If the gain matching result is a match failure, the bias circuit is activated, an adaptive feedback analysis is performed according to the gain adaptive matching module, an adaptive gate voltage is obtained, and the gate voltage of the MOSFET is adjusted by the adaptive gate voltage.

2. The method according to claim 1, characterized in that The bias circuit is used to perform feedback regulation on the gate voltage of the MOSFET, and the bias circuit includes a power supply voltage, a resistor voltage divider circuit and a source feedback resistor; The power supply voltage provides a bias for the gate voltage of the MOSFET, the resistor voltage divider circuit is used to stabilize the bias provided by the power supply voltage, and the source feedback resistor is connected between the source of the MOSFET and ground.

3. The method according to claim 2, characterized in that The resistor voltage divider circuit includes a pull-up resistor and a pull-down resistor; The pull-up resistor is connected between the power supply voltage and the gate of the MOSFET, the pull-down resistor is connected between the gate of the MOSFET and ground, and the pull-up resistor and the pull-down resistor perform voltage division.

4. The method according to claim 1, characterized in that The gain adaptive matching module performs gain prediction according to the component state information, and the method includes: Calculating the transconductance and load resistance of the MOSFET according to the component state information; The expression for outputting the predicted gain based on the transconductance and the load resistance is: , ; in, is the transconductance of the MOSFET, indicating the drain current Relative to gate voltage The rate of change, is the load resistance.

5. The method according to claim 1, characterized in that If the gain matching result is a match failure, the bias circuit is activated to perform PID adaptive feedback analysis, and the expression is as follows: ; in, is the adaptive gate voltage, is the previous gate voltage, is the proportional gain coefficient, which represents the direct effect of the gain error on the gate voltage, is the gain error between the target gain and the predicted gain, is the integral gain factor, used to avoid steady-state errors, is the accumulated gain error over the past period of time, is the differential gain coefficient, is the differential of the gain error, which represents the rate of change of the gain error over time.

6. The method according to claim 4, characterized in that Outputting a predicted gain according to the transconductance and the load resistance transconductance, the method further comprising: Performing temperature sensing on the MOSFET according to the temperature sensor to obtain the real-time temperature; If the real-time temperature is greater than a preset threshold, a temperature loss is introduced to optimize the prediction gain, and the optimized prediction gain is output.

7. The method according to claim 2, characterized in that The adaptive gate voltage regulates the gate voltage of the MOSFET, and the method includes: The bias circuit is connected to a DAC module, and the adaptive gate voltage is converted into an analog gate voltage signal through the DAC module; The analog gate voltage signal is transmitted to the output end of the bias circuit to adjust the gate voltage of the MOSFET.

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