Collimating device for physical vapor deposition apparatus and physical vapor deposition apparatus

Abstract

The application provides a collimation device of a physical vapor deposition equipment and the physical vapor deposition equipment. The first collimator and the second collimator in the device are arranged in a process chamber and are stacked between a target material and a susceptor in the process chamber. The first collimator has a plurality of first hollow parts, and the second collimator has a plurality of second hollow parts. Each first hollow part and each second hollow part are arranged correspondingly. The first collimator and / or the second collimator can move in the plane where it is located to adjust the cross-sectional area of the overlapping part of each first hollow part and the corresponding second hollow part. The scheme can be applied to wafers with various holes and grooves with different aspect ratio features to achieve optimal bottom coverage, and the collimator does not need to be replaced, thereby improving production efficiency and machine utilization.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor manufacturing, in particular, to a collimating device of a physical vapor deposition equipment and the physical vapor deposition equipment. BACKGROUND

[0002] With the development of integrated circuits, the scale of semiconductor devices contained therein is still expanding, the circuit density continues to increase, and the device size needs to be continuously reduced, so that the width of interconnects (such as vias, trenches, contacts, and gates, etc.) is reduced, and the aspect ratio is also increased, and the challenge of manufacturing these structures is also increasing.

[0003] Physical vapor deposition (PVD) technology is a technology widely used in wafer metal film deposition, which has high deposition efficiency and good film density. However, since the sputtering direction of particles is completely random, it is difficult to ensure that the film of uniform thickness is generated everywhere on the wafer, and overhangs are easily generated at the corners of high aspect ratio features, which further reduces the feature width and even causes clogging and porosity defects, affecting the conductivity of the region.

[0004] A collimator is a device that can significantly improve the collimation of particles and significantly improve the filling ability of PVD film deposition on high aspect ratio features. The device usually has a thin wall with equal thickness and includes some through holes in the thin wall, which can filter out particles with a large angle between the target and the wafer. Only particles close to vertical can reach the wafer surface, thereby improving the step coverage of the trench.

[0005] However, the existing collimator only has a single aperture and aspect ratio, and cannot be applied to wafers with various holes and grooves with different aspect ratio features to achieve optimal bottom coverage. If another collimator with a different aperture is needed, the chamber will have a long maintenance time, which seriously affects production efficiency and machine utilization. SUMMARY

[0006] The present application aims to at least solve one of the technical problems existing in the prior art, and proposes a collimating device of a physical vapor deposition equipment and the physical vapor deposition equipment, which can be applied to wafers with various holes and grooves with different aspect ratio features to achieve optimal bottom coverage, and does not need to replace the collimator, thereby improving production efficiency and machine utilization.

[0007] To achieve the purpose of the present application, a collimating device of a physical vapor deposition equipment is provided, comprising a first collimator and a second collimator, the first collimator and the second collimator are arranged in a process chamber of the physical vapor deposition equipment, and are stacked between a target and a susceptor in the process chamber.

[0008] The first collimator has a plurality of first hollows, and the second collimator has a plurality of second hollows, each of the first hollows and each of the second hollows being correspondingly arranged;

[0009] The first collimator and / or the second collimator is capable of moving in a plane in which the first collimator and / or the second collimator is located, so as to adjust a cross-sectional area of an overlapping part of each of the first hollows and each of the corresponding second hollows.

[0010] Optionally, the first collimator is fixedly connected with a shielding member in the process chamber, and the second collimator is movably connected with the shielding member along a radial direction of the process chamber.

[0011] Optionally, the first collimator comprises a first annular sidewall and a first grid structure, the first grid structure being located in a space defined by the first annular sidewall and connected with the first annular sidewall, and grids in the first grid structure constituting the first hollows;

[0012] The first annular sidewall is fixedly connected with the shielding member, and an outer circumferential surface of the first annular sidewall is fitted with an inner circumferential surface of the shielding member.

[0013] Optionally, the second collimator comprises a second annular sidewall and a second grid structure, the second grid structure being located in a space defined by the second annular sidewall and connected with the second annular sidewall, and grids in the second grid structure constituting the second hollows;

[0014] The second annular sidewall is movably connected with the shielding member along the radial direction of the process chamber.

[0015] Optionally, a radial thickness of the second annular sidewall is less than a radial thickness of the first annular sidewall, and when the cross-sectional area of the overlapping part of each of the first hollows and each of the corresponding second hollows is maximum, a normal projection of the second annular sidewall on a radial cross section of the process chamber is completely in a normal projection of the first annular sidewall on the radial cross section of the process chamber.

[0016] Optionally, the second collimator further comprises a first fixing part and a second fixing part, the first fixing part and the second fixing part being oppositely arranged along an arbitrary diameter direction of the second annular sidewall;

[0017] One end of the first fixing part is fixedly connected with an outer circumferential surface of the second annular sidewall, and the other end is used for penetrating through a first through hole of the shielding member along the diameter direction and extending to outside of the shielding member, and is used for being connected with a driving member, and the driving member is used for driving the first fixing part to move along the diameter direction.

[0018] One end of the second fixing part is fixedly connected to the outer peripheral surface of the second annular sidewall, and the other end is used to be movable along the diameter direction and pass through the second through hole of the shielding member.

[0019] Optionally, the driving component includes a drive shaft and a drive source, wherein one end of the drive shaft is connected to the other end of the first fixed part, and the other end of the drive shaft passes through the chamber wall of the process chamber and extends outside the process chamber, and is connected to the drive source in a driving manner; the drive source is used to drive the first fixed part to move along the diameter direction through the drive shaft.

[0020] Optionally, the first collimator is located between the second collimator and the target material; the thickness of the first collimator is consistent at different positions.

[0021] Optionally, the first collimator is located between the second collimator and the target material; the thickness of the second collimator is consistent at different locations; or,

[0022] The thickness of the second collimator increases from the outer periphery towards the center according to a preset rule.

[0023] Optionally, the preset rules include:

[0024] The thickness of the second collimator increases from the outer periphery towards the center and then remains constant; or, the thickness of the second collimator increases linearly from the outer periphery towards the center; or, the thickness of the second collimator increases segmentally from the outer periphery towards the center.

[0025] Optionally, at least one of the first and second mesh structures has mesh walls of equal thickness, or the thickness increases gradually along the axial direction of the process chamber towards the base; or...

[0026] At least one of the first and second grid structures has a tapered section at the end of its grid wall away from the base, and the axial cross-sectional profile of the tapered section includes an arc, a triangle, or a trapezoid.

[0027] Optionally, when the cross-sectional area of ​​the overlapping portion of each of the first hollow portions and the corresponding second hollow portions is maximized, the orthographic projections of each of the first hollow portions and the corresponding second hollow portions on the radial section of the process chamber completely coincide.

[0028] Optionally, the depth-to-width ratio of the first hollow portion is greater than or equal to 1:2 and less than or equal to 1:1.

[0029] Optionally, the depth-to-width ratio of the second hollow portion distributed in the central region of the second collimator is greater than or equal to 3:1 and less than or equal to 1:1; the depth-to-width ratio of the second hollow portion distributed in the edge region of the second collimator is greater than or equal to 1:2 and less than or equal to 1:1.

[0030] Optionally, the first collimator and the second collimator are spaced apart along the axial direction of the process chamber.

[0031] As another technical solution, the present invention also provides a physical vapor deposition apparatus, including a process chamber, in which a target material and a base disposed below the target material are disposed, and the collimation device provided by the present invention described above.

[0032] The present invention has the following beneficial effects:

[0033] The collimation device of the physical vapor deposition equipment provided by the present invention, by stacking a first collimator and a second collimator between the target and the base in the process chamber, and enabling the first collimator and / or the second collimator to move in their own plane, can adjust the cross-sectional area of ​​the overlapping portion of each first cutout and the corresponding second cutout, thereby adjusting the aspect ratio of the overlapping portion. By adjusting the aspect ratio, it can be matched with wafers with various holes and grooves with different aspect ratios to achieve optimal bottom coverage, and there is no need to replace the collimator, thereby improving production efficiency and machine utilization.

[0034] The physical vapor deposition equipment provided by this invention, by employing the above-mentioned collimation device provided by this invention, can be applied to wafers with various holes and grooves with different aspect ratios, so as to achieve the optimal bottom coverage, and without the need to replace the collimator, thereby improving production efficiency and machine utilization. Attached Figure Description

[0035] Figure 1 A cross-sectional view of a physical vapor deposition apparatus provided in an embodiment of the present invention;

[0036] Figure 2 This is a radial cross-sectional view of the first collimator used in an embodiment of the present invention;

[0037] Figure 3 This is a radial cross-sectional view of the second collimator used in an embodiment of the present invention;

[0038] Figure 4 This is an axial cross-sectional view of the first collimator used in an embodiment of the present invention;

[0039] Figure 5 These are four structural diagrams of the first grid structure used in embodiments of the present invention;

[0040] Figure 6 This is an axial cross-sectional view of the second collimator used in an embodiment of the present invention;

[0041] Figure 7 These are four structural diagrams of the second collimator used in embodiments of the present invention;

[0042] Figure 8 This is a partial enlarged view of the driving component used in an embodiment of the present invention;

[0043] Figure 9 This is a diagram illustrating the process of relative movement between a first collimator and a second collimator as used in an embodiment of the present invention.

[0044] Figure 10 This is a diagram illustrating the process of relative movement between the first collimator and the second collimator, as used in another embodiment of the present invention.

[0045] Figure 11 This is a diagram illustrating the process of relative movement between the first collimator and the second collimator, as used in another embodiment of the present invention. Detailed Implementation

[0046] To enable those skilled in the art to better understand the technical solution of the present invention, the collimation device and physical vapor deposition equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0047] Please refer to the following: Figures 1 to 11 The collimation device 109 of the physical vapor deposition apparatus 100 provided in this embodiment of the invention includes a first collimator 1 and a second collimator 2. Both the first collimator 1 and the second collimator 2 are disposed in the process chamber 101 of the physical vapor deposition apparatus 100, and are stacked between the target 102 and the base 103 in the process chamber 101, for example, they can be located near the target 102. It should be noted that the above-mentioned "stacked" refers to the overlapping area of ​​the orthographic projections of the first collimator 1 and the second collimator 2 on the radial cross-section of the process chamber. The first collimator 1 and the second collimator 2 can be spaced apart axially in the process chamber, thus enabling relative movement between them. However, the first collimator 1 and the second collimator 2 can also be stacked with relative movement.

[0048] The first collimator 1 has a plurality of first hollow portions 13, and the second collimator 2 has a plurality of second hollow portions 23. Each first hollow portion 13 and each second hollow portion 23 are correspondingly arranged, and the first collimator 1 and / or the second collimator 2 are capable of moving within their own plane, which is, for example, perpendicular to the axial direction of the process chamber 101 (i.e., parallel to the axial direction). Figure 1 The vertical direction is used to adjust the cross-sectional area of ​​the overlapping portion of each first hollow part 13 and the corresponding second hollow part 23, thereby adjusting the depth-to-width ratio of the overlapping portion.

[0049] Specifically, each first cutout portion 13 and each second cutout portion 23 is used to filter particles sputtered from the target 102 and moving towards the base 103 in a direction outside a specified angle range. This allows for two-stage screening of the particles sputtered from the target 102. Only particles that pass through the first cutout portion 13 and the second cutout portion 23 can successfully land on the wafer W surface. Specifically, the particles land on the wafer W surface via the overlapping portion of each first cutout portion 13 and the corresponding second cutout portion 23. Since the sputtering direction of the particles sputtered from the target 102 is completely random, a collimation device 109 is needed to filter out particles with large angles between the target 102 and the wafer. Only particles that are nearly perpendicular can reach the wafer W surface, thereby improving the trench step coverage. The first cutout portion 13 and the second cutout portion 23 are both used to allow particles to pass through within a specified angle range. The specified angle range is related to the aspect ratio of the overlapping portion of each first cutout portion 13 and the corresponding second cutout portion 23. The larger the aspect ratio, the larger the specified angle range. This is applicable to wafers with holes and grooves that have relatively small aspect ratio features. Conversely, the smaller the aspect ratio, the smaller the specified angle range. This is applicable to wafers with holes and grooves that have relatively large aspect ratio features.

[0050] In some optional embodiments, when the cross-sectional area of ​​the overlapping portion of each first cutout portion 13 and each second cutout portion 23 is maximized, the orthographic projections of each first cutout portion 13 and the corresponding second cutout portion 23 on the radial section of the process chamber 101 completely coincide. That is, the shape and size of the orthographic projections of each first cutout portion 13 and the corresponding second cutout portion 23 on the radial section of the process chamber 101 are the same, so that each first cutout portion 13 and the corresponding second cutout portion 23 can completely overlap, thereby maximizing the aspect ratio of the overlapping portion.

[0051] In some optional embodiments, the orthographic projections of the first cutout portion 13 and the second cutout portion 23 onto the radial section of the process chamber 101 may include, for example, a circle, a polygon, or any other arbitrary shape. Further optionally, the polygon may be a triangle, a quadrilateral (e.g., a square, a rectangle), a hexagon, etc. Taking a square as an example, the orthographic projections of the first cutout portion 13 and the second cutout portion 23 onto the radial section of the process chamber 101 may be... Figure 9 The left figure shows that the relative positions of each first hollow part 13 and each second hollow part 23 are located at the position with the largest cross-sectional area of ​​the overlapping part (i.e., position 1). At position 1, each first hollow part 13 and the corresponding second hollow part 23 can completely overlap, and the cross-sectional area of ​​the overlapping part is A. Figure 9 The right figure shows the collimator 1 and / or the collimator 2 from the position 1 with the largest cross-sectional area, along a specified diameter direction in their own plane (e.g., ...). Figure 9When the first hollow part 13 and the corresponding second hollow part 23 move a certain distance (parallel to the diagonal O of the square), they do not completely overlap. For each first hollow part 13, it is further divided into multiple smaller sub-hollow parts by the sidewalls that constitute the second hollow part 23, which do not completely overlap. These sub-hollow parts constitute the new overlapping part of each first hollow part 13 and the corresponding second hollow part 23. The cross-sectional area A1 of the new overlapping part is significantly reduced (for example, reduced to about 1 / 4 of the original cross-sectional area A), thereby realizing the adjustment of the depth-to-width ratio of the overlapping part.

[0052] Taking the shape of the orthographic projection of the first hollow part 13 and the second hollow part 23 on the radial section of the process chamber 101 as an example, which is hexagonal, Figure 10 The left figure shows that the relative positions of each first hollow part 13 and each second hollow part 23 are located at the position with the largest cross-sectional area of ​​the overlapping part (i.e., position 1). At position 1, each first hollow part 13 and the corresponding second hollow part 23 can completely overlap. The cross-sectional shape of the overlapping part is hexagonal, and the cross-sectional area of ​​the overlapping part is A. Figure 10 The right figure shows that when the first collimator 1 and / or the second collimator 2 move a certain distance from the position 1 with the largest cross-sectional area as described above, along a specified diameter direction in their own plane (e.g., along a diameter direction O tilted 45° to the left in a plane parallel to the paper), each of the first cutout portions 13 and the corresponding second cutout portions 23 do not completely overlap. For each first cutout portion 13, it is further divided into multiple smaller sub-cutout portions by the sidewalls that constitute the second cutout portion 23, which do not completely overlap. These sub-cutout portions constitute the new overlapping part of each first cutout portion 13 and the corresponding second cutout portion 23. The cross-sectional shape of the new overlapping part is mainly a parallelogram or rhombus (and a small number of irregular shapes), and the cross-sectional area A1 is significantly reduced (e.g., reduced to about 1 / 3 of the original cross-sectional area A), thereby realizing the adjustment of the depth-to-width ratio of the overlapping part.

[0053] Taking the shape of the orthographic projection of the first hollow portion 13 and the second hollow portion 23 onto the radial section of the process chamber 101 as an example, which is a triangle, Figure 11 The left figure shows that the relative positions of each first hollow part 13 and each second hollow part 23 are located at the position with the largest cross-sectional area of ​​the overlapping part (i.e., position 1). At position 1, each first hollow part 13 and the corresponding second hollow part 23 can completely overlap. The cross-sectional shape of the overlapping part is triangular, and the cross-sectional area of ​​the overlapping part is A. Figure 2When the first collimator 1 and / or the second collimator 2 move a certain distance from the position with the largest cross-sectional area along a specified diameter direction in their own plane (e.g., along a diameter direction O tilted 45° to the left in a plane parallel to the paper), each of the first cutout portions 13 and the corresponding second cutout portions 23 do not completely overlap. For each first cutout portion 13, it is further divided into multiple smaller sub-cutout portions by the sidewalls that constitute the second cutout portion 23, which do not completely overlap. These sub-cutout portions constitute the new overlapping part of each first cutout portion 13 and the corresponding second cutout portion 23. The cross-sectional shape of the new overlapping part is mainly triangular, parallelogram or rhomboid (and a small number of irregular shapes), and the cross-sectional area A1 is significantly reduced (e.g., reduced to about 1 / 3 of the original cross-sectional area A), thereby realizing the adjustment of the depth-to-width ratio of the overlapping part.

[0054] In this embodiment of the invention, a first collimator 1 and a second collimator 2 are stacked between the target 102 and the base 103 in the process chamber 101, and the first collimator 1 and / or the second collimator 2 can move within their own plane. This allows adjustment of the cross-sectional area of ​​the overlapping portion of each first cutout portion 13 and the corresponding second cutout portion 23, thereby adjusting the aspect ratio of the overlapping portion. By adjusting the aspect ratio, it can be matched with wafers with various holes and grooves having different aspect ratios, achieving optimal bottom coverage. Moreover, there is no need to replace the collimator, which can improve production efficiency and machine utilization.

[0055] In some alternative embodiments, such as Figure 2 As shown, the first collimator 1 is fixedly connected to the shield 104 in the process chamber 101, and the second collimator 2 is connected to the shield 104 in a radially movable manner along the process chamber 101. In this case, the first collimator 1 is fixed relative to the process chamber 101, and the cross-sectional area of ​​the overlapping portion of each first hollow portion 13 and the corresponding second hollow portion 23 can be adjusted simply by moving the second collimator 2 radially along the process chamber 101.

[0056] In some alternative embodiments, such as Figure 2As shown, the first collimator 1 includes a first annular sidewall 11 and a first mesh structure 12, wherein the first mesh structure 12 is located in the space defined by the first annular sidewall 11 and connected to the first annular sidewall 11. The mesh in the first mesh structure 12 forms a first hollow portion 13 (i.e., a through hole); the first annular sidewall 11 is used to fixally connect to the shield 104 in the process chamber 101, and the outer peripheral surface of the first annular sidewall 11 is in contact with the inner peripheral surface of the shield 104. The aforementioned first mesh structure 12 is a mesh-like structure composed of multiple thin walls. Taking the shape of the orthographic projection of the first hollow portion 13 and the second hollow portion 23 on the radial section of the process chamber 101 as a square as an example, four thin walls can be enclosed to form a square mesh, i.e., the first hollow portion 13. Each thin wall has a certain height. When particles move downwards, particles with excessively large angles will collide with the thin walls and thus adhere to them, thereby achieving particle filtering. The aforementioned first annular sidewall 11 is used to fix all the thin walls. Optionally, the first annular sidewall 11 is integrally formed with the first mesh structure 12. Furthermore, by fixing the first annular sidewall 11 to the shield 104 in the process chamber 101, the first collimator 1 can be fixed in the process chamber 101, keeping it stationary. Simultaneously, by fitting the outer circumferential surface of the first annular sidewall 11 against the inner circumferential surface of the shield 104, the gap between the outer circumferential surface of the first annular sidewall 11 and the inner circumferential surface of the shield 104 can be sealed, preventing particles from passing directly through that location. It is easy to understand that since the first collimator 1 is stationary, the second collimator 2 needs to move relative to the first collimator 1 within its own plane. Optionally, the first annular sidewall 11 can be integrally formed or welded to the shield 104.

[0057] In some alternative embodiments, such as Figure 3As shown, the second collimator 2 includes a second annular sidewall 21 and a second mesh structure 22. The second mesh structure 22 is located in the space defined by the second annular sidewall 21 and is connected to the second annular sidewall 21. The mesh in the second mesh structure 22 forms a second hollow portion 23 (i.e., a through hole). The second annular sidewall 21 and the shielding member 104 are movably connected along the radial direction of the process chamber 101. Similar to the first mesh structure 12, the second mesh structure 22 is a mesh-like structure composed of multiple thin walls. Taking the shape of the orthographic projection of the first hollow portion 13 and the second hollow portion 23 on the radial section of the process chamber 101 as a square, four thin walls can be enclosed to form a square mesh, i.e., the second hollow portion 23. The aforementioned second annular sidewall 21 is used to fix all the thin walls. Optionally, the second annular sidewall 21 is integrally formed with the second mesh structure 22. In addition, by connecting the second annular sidewall 21 to the shield 104 in a radially movable manner along the process chamber 101, the second collimator 2 can be fixed in the process chamber 101 by the shield 104, and can also move relative to the first collimator 1 in the process chamber 101.

[0058] Further optionally, the radial thickness of the second annular sidewall 21 is less than the radial thickness of the first annular sidewall 11, and the cross-sectional area is largest at the overlapping portion of each first hollow portion 13 and each second hollow portion 23 (e.g., located in...). Figures 9 to 11 When positioned as shown in the left figure (position 1), the orthographic projection of the second annular sidewall 21 on the radial section of the process chamber 101 completely falls within the orthographic projection of the first annular sidewall 11 on the radial section of the process chamber 101. In this way, the gap between the outer circumferential surface of the second annular sidewall 21 and the inner circumferential surface of the shield 104 can be sealed by the first annular sidewall 11, preventing particles from directly passing through the gap between the second annular sidewall 21 and the shield 104.

[0059] There are various ways in which the second annular sidewall 21 and the shield 104 can be connected radially movable along the process chamber 101. In some optional embodiments, such as... Figure 3 As shown, the second collimator 2 also includes a first fixing part 3 and a second fixing part 4, which are located along any one of the diameter directions of the second annular sidewall 21 (e.g., Figure 3 The diameter direction O shown is relatively set. Taking the shape of the orthographic projection of the first cutout portion 13 and the second cutout portion 23 on the radial section of the process chamber 101 as a square as an example, the diameter direction O is, for example, a direction parallel to the diagonal of the square. Figure 1 and Figure 8As shown, one end of the first fixing part 3 is fixedly connected to the outer peripheral surface of the second annular sidewall 21, and the other end is used to pass through the first through hole of the shield 104 along the aforementioned diametrical direction O and extend beyond the shield 104, and is used to connect with the driving member. Optionally, the shield 104 includes, for example, an upper shield 104a and a lower shield 104b, which are stacked axially in the process chamber 101, and the aforementioned first through hole is formed between the upper shield 104a and the lower shield 104b.

[0060] The driving component 6 is used to drive the first fixed part 3 to move along the diametrical direction O; one end of the second fixed part 4 is fixedly connected to the outer peripheral surface of the second annular sidewall 21, and the other end is used to be movably inserted into the second through hole of the shield 104 along the diametrical direction O. The second through hole can be formed, for example, between the upper shield 104a and the lower shield 104b. The driving component can be a manually driven component. Alternatively, it can be a driver, for example, including a drive shaft 5 and a drive source 6, wherein one end of the drive shaft 5 is connected to the other end of the first fixed part 3, and the other end of the drive shaft 5 passes through the chamber wall of the process chamber 101 and extends outside the process chamber 101, and is drively connected to the drive source 6; the drive source 6 is used to drive the first fixed part 3 to move along the diametrical direction O through the drive shaft 5. Specifically, the drive source 6 is, for example, a rotary motor, and the transmission shaft 5 is, for example, a screw. The drive shaft of the rotary motor 6 is threadedly engaged with the screw through a rotating nut. Under the drive of the rotary motor, the nut drives the screw to move linearly during rotation, thereby driving the first fixed part 3 and the second annular sidewall 21 to move synchronously.

[0061] In some optional embodiments, the second collimator 2 is located on the side of the first collimator 1 closer to the base 103. That is, the movable collimator is located below the fixed collimator, which helps to seal the gap between the outer peripheral surface of the second annular sidewall 21 and the inner peripheral surface of the shield 104 by means of the first annular sidewall 11, preventing particles from passing directly through the gap between the second annular sidewall 21 and the shield 104. Optionally, there is a gap between the first collimator 1 and the second collimator 2 to ensure that the second collimator 2 can move normally and prevent debris from being generated due to friction caused by relative movement.

[0062] In some alternative embodiments, such as Figure 3As shown, the thickness H1 of the first collimator 1 is consistent at different positions. Specifically, the thickness of the first annular sidewall 11 is consistent with the thickness of each grid wall in the first grid structure 12. Optionally, the aspect ratio of the first hollow portion 13 is greater than or equal to 1:2 and less than or equal to 1:1. However, the present invention is not limited to this. In practical applications, the thickness of the first collimator 1 at different positions can be inconsistent according to the specific requirements of the wafer with holes and grooves having different aspect ratios. Optionally, the thickness H1 of the first collimator 1 is consistent at different positions and is greater than or equal to 1 mm and less than or equal to 10 mm. The above aspect ratio is the ratio of the thickness of the first collimator 1 to the diameter of the hole in the first hollow portion 13.

[0063] In some optional embodiments, the thickness of the second collimator 2 is consistent at different locations. Specifically, the thickness of the second annular sidewall 21 is consistent with the thickness of each grid wall in the second grid structure 22; optionally, the thickness of the second collimator 2 is greater than or equal to the thickness of the first collimator 1. Or, as... Figure 6 and Figure 7 As shown, the thickness of the second collimator 2 increases from the outer periphery towards the center according to a preset rule. The greater the thickness of the second collimator 2, the greater the aspect ratio of the second hollow portion 23, and vice versa. Therefore, by increasing the thickness of the second collimator 2 from the outer periphery towards the center according to a preset rule, it can be applied to situations where the number of particles distributed in the middle region of the process chamber is larger than the number of particles distributed in the edge region. This avoids obtaining a "thick in the middle, thin at both sides" film during the deposition process without a collimator, thereby improving the film thickness uniformity. Optionally, the aspect ratio of the second hollow portion 23 distributed in the central region of the second collimator 2 is greater than or equal to 3:1 and less than or equal to 1:1; the aspect ratio of the second hollow portion 23 distributed in the edge region of the second collimator 2 is greater than or equal to 1:2 and less than or equal to 1:1. In practical applications, the aspect ratio of different regions of the second collimator 2 can be combined in various ways according to the specific requirements of the wafer with different aspect ratio characteristics of holes and grooves. The aforementioned depth-to-width ratio is the ratio of the thickness of the second collimator 2 to the diameter of the hole in the second hollow part 23.

[0064] Specifically, such as Figure 7 As shown in Figure (a), the thickness of the second collimator 2 is consistent at different locations. Or, as... Figure 7 As shown in Figures (a) to (d), the thickness of the second collimator 2 increases from the outer periphery towards the center according to a preset rule, which may include:

[0065] like Figure 7 As shown in Figure (b), the thickness of the second collimator 2 first increases from the outer periphery towards the center, and then remains constant; or, as... Figure 7 As shown in Figure (c), the thickness of the second collimator 2 increases linearly from the outer periphery towards the center; or, as...Figure 7 As shown in Figure (d), the thickness of the second collimator 2 increases segmentally from the outer periphery towards the center. Based on the above rule, the lower surface 24 of the second collimator 2 is, for example, an arched surface (such as...). Figure 6 As shown), conical surface (such as) Figure 7 As shown in Figure (c), the stepped surface (as shown in Figure (c)). Figure 7 (d) shown in the figure), trapezoidal platform (as shown in the figure) Figure 7 The surface is thick in the middle and thin at the edges, as shown in Figure (b).

[0066] In some optional embodiments, the mesh walls of at least one of the first mesh structure 12 and the second mesh structure 22 are of equal thickness, or the thickness increases along the axial direction of the process chamber 101 towards the base 103. Since particles easily accumulate at the top of the sidewalls, by appropriately thinning the wall thickness at the top of the sidewalls, the particle thickness protruding from the sidewalls and affecting the aspect ratio of the cutout can be avoided. When the mesh walls of at least one of the first mesh structure 12 and the second mesh structure 22 increase along the axial direction of the process chamber 101 towards the base 103, the cross-sectional shape of the mesh wall is, for example, triangular, trapezoidal, etc. Similarly, the end of the mesh wall of at least one of the first mesh structure 12 and the second mesh structure 22 away from the base 103 can also be provided with a tapered portion, the axial cross-sectional profile of which includes an arc, triangle, or trapezoid. Taking the first mesh structure 12 as an example, as... Figure 5 As shown in Figure (a), the mesh walls of the first mesh structure 12 are set with uniform thickness; as Figure 5 As shown in Figure (b), the end of the first grid structure 12 furthest from the base 103 is provided with a tapered portion 121, the axial cross-sectional profile of which is trapezoidal; as Figure 5 As shown in Figure (c), the end of the first mesh structure 12 furthest from the base 103 is provided with a tapered portion 121, the axial cross-section of which has an arc-shaped profile; as Figure 5 As shown in Figure (d), the mesh wall thickness of the first mesh structure 12 increases along the axial direction of the process chamber 101 toward the base 103.

[0067] Optionally, the first collimator 1 and the second collimator 2 may be made of aluminum, stainless steel, copper, or other materials. Preferably, the outer surfaces of the first collimator 1 and the second collimator 2 are surfaces with relatively high roughness to better adhere the sputtered material.

[0068] In summary, the collimation device of the physical vapor deposition apparatus provided in this embodiment of the invention, by stacking a first collimator 1 and a second collimator 2 between the target 102 and the base 103 in the process chamber 101, and enabling the first collimator 1 and / or the second collimator 2 to move within their respective planes, can adjust the cross-sectional area of ​​the overlapping portion of each first cutout portion 13 and the corresponding second cutout portion 23, thereby adjusting the aspect ratio of the overlapping portion. This allows for matching with wafers having various holes and grooves with different aspect ratios, achieving optimal bottom coverage, without the need to replace the collimator, thus improving production efficiency and machine utilization.

[0069] As another technical solution, such as Figure 1 As shown, this embodiment of the invention also provides a physical vapor deposition apparatus 100, including a process chamber 101, a target 102 and a base 103 disposed below the target 102 in the process chamber 101, and the collimation device 109 provided in this embodiment of the invention.

[0070] Taking a physical vapor deposition (PVD) apparatus 100 as an example of a magnetron sputtering apparatus, the magnetron sputtering apparatus includes a process chamber 101, a DC power supply 105, a magnetron 106 and its driving device 107, and an RF power supply 110. The process chamber 101 contains a target 102 and a base 103 located below the target 102, the base 103 being used to support the wafer W. The target 102 is electrically connected to the DC power supply 105, which is used to excite the reactive gas (e.g., argon) in the process chamber 101 to form a plasma. The positive ions in the plasma bombard the surface of the target 102, causing particles (uncharged atoms of the target 102) on the surface of the target 102 to escape. Optionally, the target 102 may be made of a metal or alloy that can be sputtered by PVD, such as copper (e.g., for forming a seed layer on the wafer), aluminum, tantalum, etc. The base 103 is electrically connected to the RF power supply 110, which is used to generate a bias voltage on the wafer surface that attracts particles to move downwards.

[0071] The magnetron 106 is positioned above the target 102 and supported by the drive device 107 to maintain a fixed distance between the magnetron 106 and the target 102. The drive device 107 drives the magnetron 106 to rotate, thereby generating a magnetic field near the lower surface of the target 102 that can trap electrons. This causes a large number of charged particles to bombard the target 102, sputtering a large amount of target material 102 into the process chamber 101. The rotation of the magnetron 106 ensures uniform sputtering of target material 102 at different locations on the target 102 surface.

[0072] The base 103 is disposed below the target 102, and its upper surface is equipped with an electrostatic chuck (ESC) for supporting and adsorbing the wafer. The electrostatic chuck may have functions such as adsorption or temperature control. The wafer W has holes and grooves with high aspect ratio features. The target material sputtered from the target 102 can move downward and be deposited on the wafer surface to form a thin film.

[0073] Optionally, a side magnet device 108 is provided on the outer side of the process chamber 101 near the base 103. The side magnet device 108 can be a permanent magnet or various forms of electromagnets, or even any combination of the two. With the help of the side magnet device 108, a magnetic field can be coupled into the interior of the chamber, changing the magnetic field distribution in the region near the base 103, increasing the residence time of electrons in this region, thereby improving the ionization rate of the internal gas while controlling the direction of the plasma and improving the uniformity of the thin film deposited on the wafer.

[0074] The collimation device 109 is disposed in the process chamber 101 and connected to the shield 104. Specifically, the shield 104 includes an upper shield and a lower shield, which are stacked axially in the process chamber 101, and the collimation device is connected between the upper shield and the lower shield.

[0075] The physical vapor deposition equipment provided in this embodiment of the invention, by employing the collimation device described above, can be applied to wafers with various holes and grooves having different aspect ratios, achieving optimal bottom coverage without the need to replace the collimator, thereby improving production efficiency and machine utilization.

[0076] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A collimating device of a physical vapor deposition apparatus, characterized by, The first collimator and the second collimator are arranged in a process chamber of the physical vapor deposition device and are arranged in a stacked manner between a target and a susceptor in the process chamber; The first collimator has a plurality of first hollow parts, and the second collimator has a plurality of second hollow parts, each of the first hollow parts and each of the second hollow parts are arranged correspondingly; The first collimator is fixed, and the second collimator can move in a plane in which the second collimator is located, so as to adjust a cross-sectional area of an overlapping part of each of the first hollow parts and the corresponding second hollow part.

2. The collimating device of claim 1, wherein, The first collimator is fixedly connected with a shielding member in the process chamber, and the second collimator is movably connected with the shielding member along a radial direction of the process chamber.

3. The collimating device of claim 2, wherein, The first collimator comprises a first annular sidewall and a first grid structure, the first grid structure is located in a space defined by the first annular sidewall and is connected with the first annular sidewall, and grids in the first grid structure form the first hollow parts; The first annular sidewall is fixedly connected with the shielding member, and an outer circumferential surface of the first annular sidewall is fitted with an inner circumferential surface of the shielding member.

4. The collimating device of claim 3, wherein, The second collimator comprises a second annular sidewall and a second grid structure, the second grid structure is located in a space defined by the second annular sidewall and is connected with the second annular sidewall, and grids in the second grid structure form the second hollow parts; The second annular sidewall is movably connected with the shielding member along the radial direction of the process chamber.

5. The collimating device of claim 4, wherein, A radial thickness of the second annular sidewall is smaller than a radial thickness of the first annular sidewall, and when the cross-sectional area of the overlapping part of each of the first hollow parts and the corresponding second hollow part is maximum, a normal projection of the second annular sidewall on a radial cross section of the process chamber is completely in a normal projection of the first annular sidewall on the radial cross section of the process chamber.

6. The collimating device of claim 4, wherein, The second collimator further comprises a first fixing part and a second fixing part, the first fixing part and the second fixing part are oppositely arranged along a diameter direction of the second annular sidewall; One end of the first fixing part is fixedly connected with an outer circumferential surface of the second annular sidewall, and the other end is used for penetrating a first through hole of the shielding member along the diameter direction and extending out of the shielding member, and is used for being connected with a driving member; the driving member is used for driving the first fixing part to move along the diameter direction; One end of the second fixing part is fixedly connected with the outer circumferential surface of the second annular sidewall, and the other end is used for movably penetrating a second through hole of the shielding member along the diameter direction.

7. The collimating device of claim 6, wherein, The driving member comprises a transmission shaft and a driving source, one end of the transmission shaft is connected with the other end of the first fixing part, the other end of the transmission shaft penetrates a chamber wall of the process chamber and extends out of the process chamber, and is in transmission connection with the driving source; the driving source is used for driving the first fixing part to move along the diameter direction through the transmission shaft.

8. The collimating device of claim 1, wherein, The first collimator is located between the second collimator and the target, and thicknesses of different positions of the first collimator are consistent.

9. The collimating device of claim 1, wherein, The first collimator is located between the second collimator and the target; the thickness of different positions of the second collimator is consistent; or, The thickness of the second collimator increases according to a preset rule from the outer peripheral edge to the center.

10. The collimating device of claim 9, wherein, The preset rule comprises: The thickness of the second collimator increases first and then remains unchanged from the outer peripheral edge to the center; or the thickness of the second collimator increases linearly from the outer peripheral edge to the center; or the thickness of the second collimator increases in a segmented manner from the outer peripheral edge to the center.

11. The collimating device of claim 4, wherein, The grid walls of at least one of the first grid structure and the second grid structure are arranged to be equal in thickness, or increase in thickness along an axial direction of the process chamber towards the base; or, An end of the grid walls of at least one of the first grid structure and the second grid structure away from the base is provided with a tapered portion, and an axial cross-sectional profile of the tapered portion comprises a circular arc shape, a triangular shape or a trapezoidal shape.

12. The collimating device of claim 1, wherein, When a cross-sectional area of an overlapping portion of each of the first hollowed-out portions and the corresponding second hollowed-out portions is the largest, a normal projection of each of the first hollowed-out portions and the corresponding second hollowed-out portions on a radial cross-section of the process chamber is completely coincident.

13. The collimating device of claim 8, wherein, A depth-to-width ratio of the first hollowed-out portions is greater than or equal to 1:2 and less than or equal to 1:

1.

14. The collimating device of claim 9 or 10, wherein, A depth-to-width ratio of the second hollowed-out portions distributed in a central region of the second collimator is greater than or equal to 3:1 and less than or equal to 1:1, and a depth-to-width ratio of the second hollowed-out portions distributed in an edge region of the second collimator is greater than or equal to 1:2 and less than or equal to 1:

1.

15. The collimating device of claim 1, wherein, The first collimator and the second collimator are arranged to be spaced apart along an axial direction of the process chamber.

16. A physical vapor deposition apparatus comprising a process chamber in which a target and a susceptor disposed below the target are provided, characterized by, The collimating device also comprises the collimating device of any one of claims 1-15. The collimating device also comprises the collimating device of any one of claims 1-15.

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