Medium-voltage silicon carbide module active gate driver with status feedback

Abstract

This invention discloses an active gate driver for a medium-voltage silicon carbide module with state feedback. This active gate driver is based on a high-speed digital processor and incorporates a switching-functional SiC MOSFET gate capacitor charging circuit. By changing the resistance of the SiC MOSFET gate capacitor charging circuit, the current and voltage change rates of the SiC MOSFET module's power circuit are indirectly altered during switching transients. This mitigates the conflict between switching stress and losses, achieving global optimization of the SiC MOSFET module's switching performance. Simultaneously, the switching timing of the SiC MOSFET gate capacitor charging circuit is determined based on the state feedback of the SiC MOSFET module, thus adapting to different operating conditions. This invention effectively balances the conflict between switching stress and losses, achieving global optimization of the SiC MOSFET's switching performance.

Description

Technical Field

[0001] This invention relates to the field of power electronics application technology, specifically to a medium-voltage silicon carbide module active gate driver with state feedback. Background Technology

[0002] Power semiconductor modules are widely used in power transmission, rail transportation, and industrial production, serving as crucial components for power conversion. Currently, silicon (Si)-based insulated-gate bipolar transistors (IGBTs) dominate the market; however, these power devices suffer from slow switching speeds and high losses, reducing the efficiency of power converters. In contrast, silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) offer faster switching speeds and lower diode reverse recovery currents, contributing to improved power converter efficiency. However, SiC MOSFETs often exhibit ringing and significant switching stress during switching transients, causing electromagnetic interference (EMI). Therefore, designers typically increase the gate drive resistor to reduce the switching speed of SiC MOSFETs and suppress ringing. However, this gate drive resistor has a fixed value, and various conditions can arise during switching transients, preventing the full utilization of the efficiency advantages of SiC power modules. Summary of the Invention

[0003] The purpose of this invention is to provide a medium-voltage silicon carbide module active gate driver with state feedback. This invention can effectively balance the contradiction between switching stress and losses, achieving global optimization of SiC MOSFET switching performance.

[0004] The technical solution provided by this invention is as follows: an active gate driver for a medium-voltage silicon carbide module with state feedback. This active gate driver is based on a high-speed digital processor to build a SiC MOSFET gate capacitor charging circuit with switching function. By changing the resistance of the SiC MOSFET gate capacitor charging circuit, the current change rate and voltage change rate of the SiC MOSFET module power circuit are indirectly changed during switching transients. This is used to alleviate the contradiction between switching stress and loss, and to achieve global optimization of the switching performance of the SiC MOSFET module. At the same time, the switching time of the SiC MOSFET gate capacitor charging circuit is determined according to the state feedback of the SiC MOSFET module, thereby adapting to different operating conditions.

[0005] In the aforementioned medium-voltage silicon carbide module active gate driver with state feedback, the SiC MOSFET gate capacitor charging circuit includes a high-speed digital processor, a level conversion circuit, and a resistor push-pull circuit; the output terminal of the high-speed digital processor is connected to the input terminal of the level conversion circuit, the output terminal of the level conversion circuit is connected to the resistor push-pull circuit, and the resistor push-pull circuit is connected to the SiC MOSFET module; a turn-off transient voltage feedback circuit is connected to the drain and source of the SiC MOSFET module, and a turn-on transient voltage feedback circuit is connected to the power source and auxiliary source of the SiC MOSFET module; the gate capacitor charging circuit connects the turn-off transient voltage feedback circuit and the turn-on transient voltage feedback circuit.

[0006] In the aforementioned medium-voltage silicon carbide module active gate driver with state feedback, the turn-off transient voltage feedback circuit is used to obtain the drain-source voltage feedback during the turn-off transient of the SiC MOSFET module; the turn-on transient voltage feedback circuit is used to obtain the feedback of the drain current rise rate during the turn-on transient of the SiC MOSFET module; the high-speed digital processor is used to obtain the state feedback of the turn-off transient voltage feedback circuit and the turn-on transient voltage feedback circuit and output the corresponding signals; the level conversion circuit is used to receive the output signal of the high-speed digital processor and output the corresponding voltage; the resistor push-pull circuit is used to receive the voltage signal of the level conversion circuit and turn on the resistor with the corresponding resistance value.

[0007] In the aforementioned medium-voltage silicon carbide module active gate driver with state feedback, the level conversion circuit includes level converters S1, S2, S3, and S4; the resistor push-pull circuit includes resistor R. GON1 Resistance R GON2 Resistance R GOFF1 Resistance R GOFF2 The high-speed digital processor consists of PMOS transistors Q1, Q2, Q3, and Q4; its output is connected to the inputs of level converters S1, S2, S3, and S4; the output of level converter S1 is connected to the gate of PMOS transistor Q1, the source of PMOS transistor Q1 is connected to the source of PMOS transistor Q2, and the drain of PMOS transistor Q1 is connected to resistor R. GON1 One end, resistor R GON1 The other end is connected to resistor R GON2 One end and the gate of the SiCMOSFET module, resistor R GON2The other end is connected to the drain of PMOS transistor Q2, and the gate of PMOS transistor Q2 is connected to the output of level converter S2; the output of level converter S3 is connected to the gate of NMOS transistor Q3, the source of NMOS transistor Q3 is connected to the source of NMOS transistor Q4, and the drain of NMOS transistor Q3 is connected to resistor R. GOFF2 One end, resistor R GOFF2 The other end is connected to resistor R GOFF1 One end and the gate of the SiC MOSFET module, resistor R GOFF1 The other end is connected to the drain of NMOS transistor Q4, and the gate of NMOS transistor Q4 is connected to the output of level converter S4.

[0008] In the aforementioned medium-voltage silicon carbide module active gate driver with state feedback, the turn-off transient voltage feedback circuit includes resistors R1 and R2 and a comparator operational amplifier OP1. One end of resistor R1 is connected to the drain of the SiC MOSFET module, one end of resistor R2 is connected to the source of the SiC MOSFET module, the other end of resistor R1 is connected to the other end of resistor R2 and the inverting input of the comparator operational amplifier OP1, the output of the comparator operational amplifier OP1 is connected to level converters S1 and S2 via a high-speed digital processor, and a threshold voltage is input to the inverting input of the comparator operational amplifier OP1.

[0009] In the aforementioned medium-voltage silicon carbide module active gate driver with state feedback, the turn-on transient voltage feedback circuit includes an inductor L. Ss Capacitor C b Comparison operational amplifier OP2, inductor L Ss One end is connected to the auxiliary source of the SiC MOSFET module and capacitor C. b One end of the inductor L is connected to the non-inverting input of the comparator operational amplifier OP2. Ss The other end is connected to the power source of the SiC MOSFET module and capacitor C. b The other end; the inverting input terminal of the comparator operational amplifier OP2 receives the threshold voltage. The output of the comparator operational amplifier OP2 is connected to level converters S3 and S4 via a high-speed digital processor.

[0010] In the aforementioned medium-voltage silicon carbide module active gate driver with state feedback, the turn-off transient voltage feedback circuit utilizes the resistor voltage divider principle to adjust the drain-source voltage U of the SiC MOSFET module. DS Reduced proportionally to And the reduced drain-source voltage With the set threshold voltage After processing by the comparator operational amplifier OP1, if If the comparator operational amplifier OP1 remains high, The comparator operational amplifier OP1 remains at a low level; the high-speed digital processor monitors the output state of the comparator operational amplifier OP1, and controls the output of level converter S1 or level converter S2 respectively when it is high or low, thereby turning on PMOS transistor Q1 or PMOS transistor Q2 to realize the resistor R. GON1 or resistor R GON2 The entry point.

[0011] In the aforementioned medium-voltage silicon carbide module active gate driver with state feedback, the turn-on transient voltage feedback circuit, according to the inductor voltage formula, determines the rate of change of current in the power loop when the SiC MOSFET module starts to conduct, based on the inductance L between the power source and the auxiliary source. Ss Induced voltage U Ss , will U Ss With the set threshold voltage After processing by the comparator operational amplifier OP2, if If the comparator operational amplifier OP2 remains high, Comparator operational amplifier OP2 remains at a low level; the high-speed digital processor monitors the output state of comparator operational amplifier OP2, and controls the output of level converter S3 or level converter S4 respectively when it is high or low, thereby turning on NMOS transistor Q3 or NMOS transistor Q4 to realize the resistor R. GOFF1 or resistor R GOFF2 The entry point.

[0012] Compared with existing technologies, this invention utilizes a high-speed digital processor to construct a SiC MOSFET gate capacitor charging circuit with switching functionality. By changing the resistance of the SiC MOSFET gate capacitor charging circuit, the current and voltage change rates of the SiC MOSFET module's power circuit are indirectly altered during switching transients. This mitigates the conflict between switching stress and losses, achieving global optimization of the SiC MOSFET module's switching performance. Furthermore, the switching timing of the SiC MOSFET gate capacitor charging circuit is determined based on the state feedback of the SiC MOSFET module, thus adapting to different operating conditions. Attached Figure Description

[0013] Figure 1 This is a circuit diagram of the gate capacitor charging circuit of the present invention;

[0014] Figure 2 This is a circuit diagram of the transient voltage feedback circuit for the present invention.

[0015] Figure 3This is a circuit diagram for activating the transient voltage feedback circuit of the present invention;

[0016] Figure 4 This is a package diagram of a mainstream SiC MOSFET;

[0017] Figure 5 This is a transient turn-on process diagram of a SiC MOSFET module using CGD under 2kV / 700A operating conditions.

[0018] Figure 6 This is a transient turn-on process diagram of a SiC MOSFET module using AGD under 2kV / 700A operating conditions.

[0019] Figure 7 This is a diagram showing the turn-off transient process of a SiC MOSFET module using CGD under 2kV / 700A operating conditions.

[0020] Figure 8 This is a diagram showing the turn-off transient process of a SiC MOSFET module using AGD under 2kV / 700A operating conditions.

[0021] The labels in the attached diagram are: 1-Gate capacitor charging circuit; 2-High-speed digital processor; 3-Level conversion circuit; 4-Resistor push-pull circuit; 5-Turn-off transient voltage feedback circuit; 6-Turn-on transient voltage feedback circuit; 7-SiC MOSFET module. Detailed Implementation

[0022] The present invention will be further described below with reference to the embodiments and accompanying drawings, but this should not be construed as limiting the present invention.

[0023] Example: A medium-voltage silicon carbide module active gate driver with state feedback. This active gate driver is based on a high-speed digital processor to build a switching SiC MOSFET gate capacitor charging circuit. By changing the resistance of the SiC MOSFET gate capacitor charging circuit, the current and voltage change rates of the SiC MOSFET module's power circuit are indirectly changed during switching transients. This is used to alleviate the contradiction between switching stress and losses, achieving global optimization of the SiC MOSFET module's switching performance. Simultaneously, the switching timing of the SiC MOSFET gate capacitor charging circuit is determined based on the state feedback of the SiC MOSFET module, thus adapting to different operating conditions. Mainstream SiC MOSFET modules are shown in the attached diagram. Figure 4 As shown, terminals D1 and S2 are the DC terminals of the module. D1 is connected to the positive terminal of the DC bus, and S2 is connected to the negative terminal of the DC bus.

[0024] The SiC MOSFET gate capacitor charging circuit 1 includes a high-speed digital processor 2, a level conversion circuit 3, and a resistor push-pull circuit 4. The FPGA high-speed digital processor has functions such as receiving PWM signals, sending fault signals, generating pulses, and setting the dead time of the resistor push-pull circuit. The output terminal of the high-speed digital processor is connected to the input terminal of the level conversion circuit, the output terminal of the level conversion circuit is connected to the resistor push-pull circuit, and the resistor push-pull circuit is connected to the SiC MOSFET module 7. The drain and source of the SiC MOSFET module are connected to a turn-off transient voltage feedback circuit 5, and the power source and auxiliary source of the SiC MOSFET module are connected to a turn-on transient voltage feedback circuit 6. The high-speed digital processor is connected to both the turn-off transient voltage feedback circuit and the turn-on transient voltage feedback circuit. The turn-off transient voltage feedback circuit is used to obtain the drain-source voltage feedback during the turn-off transient of the SiC MOSFET module. The turn-on transient voltage feedback circuit is used to obtain the SiC MOSFET module's turn-off transient voltage feedback. The MOSFET module provides feedback on the rate of increase of the drain current during the turn-on transient state; the high-speed digital processor acquires the state feedback of the turn-off transient voltage feedback circuit and the turn-on transient voltage feedback circuit and outputs corresponding signals; the level conversion circuit receives the output signal of the high-speed digital processor and outputs the corresponding voltage; the resistor push-pull circuit receives the voltage signal of the level conversion circuit and turns on the resistor with the corresponding resistance value.

[0025] As attached Figure 1 As shown, the level conversion circuit includes level converters S1, S2, S3, and S4; the resistor push-pull circuit includes resistor R. GON1 Resistance R GON2 Resistance R GOFF1 Resistance R GOFF2 The high-speed digital processor consists of PMOS transistors Q1, Q2, Q3, and Q4; its output is connected to the inputs of level converters S1, S2, S3, and S4; the output of level converter S1 is connected to the gate of PMOS transistor Q1, the source of PMOS transistor Q1 is connected to the source of PMOS transistor Q2, and the drain of PMOS transistor Q1 is connected to resistor R. GON1 One end, resistor R GON1 The other end is connected to resistor R GON2 One end and the gate of the SiC MOSFET module, resistor R GON2 The other end is connected to the drain of PMOS transistor Q2, and the gate of PMOS transistor Q2 is connected to the output of level converter S2; the output of level converter S3 is connected to the gate of NMOS transistor Q3, the source of NMOS transistor Q3 is connected to the source of NMOS transistor Q4, and the drain of NMOS transistor Q3 is connected to resistor R. GOFF2 One end, resistor RGOFF2 The other end is connected to resistor R GOFF1 One end and the gate of the SiC MOSFET module, resistor R GOFF1 The other end is connected to the drain of NMOS transistor Q4, and the gate of NMOS transistor Q4 is connected to the output of level converter S4; level converters S1, S2, S3, and S4 convert the 0V / +3.3V level output by the high-speed digital processor into +20V and +4V levels used for turning off the transient resistor push-pull circuit and +12V and -4V levels used for turning on the transient resistor push-pull circuit, respectively. Resistor R GON1 and resistance R GON2 The resistor R is the turn-on resistor for switching in. GOFF1 and resistance R GOFF2 This is the turn-off resistor that can be switched in.

[0026] As attached Figure 2 As shown, the turn-off transient voltage feedback circuit includes resistors R1 and R2 and a comparator operational amplifier OP1. One end of resistor R1 is connected to the drain of the SiC MOSFET module, one end of resistor R2 is connected to the source of the SiC MOSFET module, and the other end of resistor R1 is connected to the other end of resistor R2 and the inverting input of the comparator operational amplifier OP1. The output of the comparator operational amplifier OP1 is connected to level converters S1 and S2 via a high-speed digital processor. The threshold voltage is input to the inverting input of the comparator operational amplifier OP1. If the application scenario is U DC Basically unchanged, then It can be set to a fixed value, if U is used in the application. DC This will produce relatively noticeable fluctuations, which can be adjusted using an analog-to-digital converter chip.

[0027] As attached Figure 3 As shown, the turn-on transient voltage feedback circuit includes an inductor L Ss Capacitor C b Comparison operational amplifier OP2, inductor L Ss One end is connected to the auxiliary source of the SiC MOSFET module and capacitor C. b One end of the inductor L is connected to the non-inverting input of the comparator operational amplifier OP2. Ss The other end is connected to the power source of the SiC MOSFET module and capacitor C. b The other end; the inverting input terminal of the comparator operational amplifier OP2 receives the threshold voltage. The output of the comparator operational amplifier OP2 is connected to level converters S3 and S4 via a high-speed digital processor.

[0028] The turn-off transient voltage feedback circuit utilizes the resistor voltage divider principle to adjust the drain-source voltage U of the SiC MOSFET module. DS Reduced proportionally to The two satisfy the relation. And K = R1 / (R1 + R2), The threshold voltage set by the user satisfies the following relationship: U DC The DC bus voltage is the reduced drain-source voltage. With the set threshold voltage After processing by the comparator operational amplifier OP1, if If the comparator operational amplifier OP1 remains high, The comparator operational amplifier OP1 remains at a low level; the high-speed digital processor monitors the output state of the comparator operational amplifier OP1, and controls the output of level converter S1 or level converter S2 respectively when it is high or low, thereby turning on PMOS transistor Q1 or PMOS transistor Q2 to realize the resistor R. GON1 or resistor R GON2 entry point

[0029] The turn-on transient voltage feedback circuit, based on the inductor voltage formula, determines the rate of change of current in the power circuit when the SiC MOSFET module starts to conduct, according to the inductor L between the power source and the auxiliary source. Ss Induced voltage U Ss Capacitor C b For voltage U Ss Perform filtering to convert U Ss With the set threshold voltage After processing by the comparator operational amplifier OP2, if If the comparator operational amplifier OP2 remains high, Comparator operational amplifier OP2 remains at a low level; the high-speed digital processor monitors the output state of comparator operational amplifier OP2, and controls the output of level converter S3 or level converter S4 respectively when it is high or low, thereby turning on NMOS transistor Q3 or NMOS transistor Q4 to realize the resistor R. GOFF1 or resistor R GOFF2 The following table 1 summarizes the working logic of the active gate driver for medium-voltage silicon carbide modules.

[0030]

[0031]

[0032] Table 1

[0033] Where t on toff t onc and t offc The definitions are as follows: t on The time variable representing the turn-on transient; t off The time variable representing the turn-off transient; t onc The switching time of the transient gate resistance during turn-on; t offc This refers to the switching moment of the gate resistor during the off-state transient; if the external input PWM signal is 1, it indicates that the SiC MOSFET module needs to be turned on; when t on <t onc At this time, the high-speed digital processor generates four signals (1, 0, 0, 0) through level converters S1, S2, S3, and S4, respectively. In the push-pull resistor circuit, only PMOS transistor Q1 is turned on, while PMOS transistors Q2, Q3, and Q4 are all turned off. The output level is +20V, and the driving resistor is resistor R. GON1 When t on >t onc When the S1-S4 signals are 0, 1, 0, and 0 respectively, only the PMOS transistor Q2 in the push-pull circuit is turned on, the output level is +20V, and the driving resistor is resistor R. GON2 If the external input PWM signal is 0, it indicates that the SiC MOSFET module needs to be turned off; when t of <t offc At this time, the four signals S1-S4 generated by the high-speed digital processor are 0, 0, 1, and 0 respectively. In the resistor push-pull circuit, only NMOS transistor Q4 is turned on, while the others are turned off. The output level is -4V, and the driving resistor is resistor R. GOFF1 When t of >t offc At this time, the four signals S1-S4 are 0, 0, 0, and 1 respectively. Only NMOS transistor Q4 in the push-pull circuit is turned on, the output level is -4V, and the driving resistor is resistor R. GOFF2 .

[0034] As attached Figure 5 and attached Figure 6 As shown, the conventional gate driver (CGD) scheme uses a fixed gate resistor of 4.9Ω, while the medium-voltage silicon carbide module active gate driver (AGD) in this scheme uses two resistors, R0 and R1. GON1 =1Ω, R GON2 =10Ω, experimental results show that the drain current I generated by both is DSThe peak values ​​are both 850A, and the turn-on loss caused by CGD can be calculated as 274mJ, while the turn-on loss caused by AGD is 235mJ, meaning that AGD can reduce the turn-on loss by 14.4%.

[0035] As attached Figure 7 and attached Figure 8 As shown, the conventional gate driver (CGD) scheme uses a fixed gate resistor of 8.2Ω, while the active gate driver (AGD) uses two resistors, R0 and R2. GOFF1 =1Ω, R GOFF2 =15Ω, experimental results show that the drain-source voltage U generated by both is DS The peak voltage is 2.5kV, and the turn-off loss caused by CGD can be calculated as 189mJ, while the turn-off loss caused by AGD is 152mJ, that is, AGD can reduce the turn-off loss by 19.6%.

[0036] In summary, a switchable resistor-based gate capacitor charging circuit for SiC MOSFETs was constructed. By changing the resistance of the gate capacitor charging circuit, the current change rate and voltage change of the power circuit are indirectly altered during switching transients, thereby achieving global optimization of the switching performance of the SiC MOSFET module. This invention integrates a state feedback function. On one hand, by comparing the drain-source voltage with a set threshold, the switching time of the turn-off transient gate capacitor charging circuit can be determined. On the other hand, by sampling the current change rate during the current rise and comparing the voltage on the lead inductance between the auxiliary source and the power source with the threshold voltage, the switching time of the turn-on transient gate capacitor charging circuit can be determined. This invention can reduce the switching losses of medium-voltage silicon carbide modules under the same switching stress.

Claims

1. A medium-voltage silicon carbide module active gate driver with status feedback, characterized in that: This active gate driver is based on a high-speed digital processor and incorporates a switching-functional SiC MOSFET gate capacitor charging circuit. By changing the resistance of the SiC MOSFET gate capacitor charging circuit, the current and voltage change rates of the SiC MOSFET module's power circuit are indirectly altered during switching transients. This mitigates the conflict between switching stress and losses, achieving global optimization of the SiC MOSFET module's switching performance. Simultaneously, the switching timing of the SiC MOSFET gate capacitor charging circuit is determined based on the state feedback of the SiC MOSFET module, adapting to different operating conditions. The SiC MOSFET gate capacitor charging circuit includes a high-speed digital processor, a level conversion circuit, and a resistor push-pull circuit. The output of the high-speed digital processor is connected to the input of the level conversion circuit, the output of the level conversion circuit is connected to the resistor push-pull circuit, and the resistor push-pull circuit is connected to the SiC MOSFET module. A turn-off transient voltage feedback circuit is connected to the drain and source of the SiC MOSFET module. The MOSFET module has turn-on transient voltage feedback circuits connected to its power source and auxiliary source; the high-speed digital processor acquires the state feedback of the turn-off transient voltage feedback circuit and the turn-on transient voltage feedback circuit and outputs corresponding signals; the level conversion circuit includes a level converter. Level converter Level converter and level converter ; The resistor push-pull circuit includes resistors. ,resistance ,resistance ,resistance PMOS transistor PMOS transistor NMOS transistor and NMOS transistor The output of the high-speed digital processor is connected to a level converter. Level converter Level converter and level converter The input terminal of the level converter; The output terminal is connected to a PMOS transistor. The gate of the PMOS transistor The source of the PMOS transistor is connected. The source of the PMOS transistor Drain connection resistor One end, resistor The other end is connected to a resistor One end and the gate of the SiC MOSFET module, resistor The other end is connected to a PMOS transistor. The drain of the PMOS transistor Gate-connected level converter The output terminal of the level converter; The output terminal is connected to an NMOS transistor. The gate of the NMOS transistor The source of the NMOS transistor is connected. The source of the NMOS transistor Drain connection resistor One end, resistor The other end is connected to a resistor One end and the gate of the SiC MOSFET module, resistor The other end is connected to an NMOS transistor. The drain of the NMOS transistor Gate-connected level converter The output terminal; the turn-off transient voltage feedback circuit in the turn-off transient state utilizes the principle of resistor voltage division to reduce the drain-source voltage U of the SiC MOSFET module. DS Reduced proportionally to and the reduced drain-source voltage With the set threshold voltage Comparison operational amplifier If Comparison operational amplifier Keep the level high, if Comparison operational amplifier Maintain low level; high-speed digital processor monitors comparator operational amplifier The output state controls the level converter when it is high or low, respectively. or level converter Output, thus turning on the PMOS transistor. or PMOS transistor To achieve resistance or resistor The cut-in; the turn-on transient voltage feedback circuit in the aforementioned turn-on transient state, according to the inductor voltage formula, when the SiC MOSFET module starts to conduct, the rate of change of current in the power loop is in the inductance between the power source and the auxiliary source. upper induced voltage ,Will With the set threshold voltage Comparison operational amplifier If Comparison operational amplifier Keep the level high, if Comparison operational amplifier Maintain low level; high-speed digital processor monitors comparator operational amplifier The output state controls the level converter when it is high or low, respectively. or level converter Output, thereby turning on the NMOS transistor. or NMOS transistor To achieve resistance or resistor The entry point.

2. The medium-voltage silicon carbide module active gate driver with state feedback according to claim 1, characterized in that: The high-speed digital processor is connected to both the transient voltage feedback circuit that is turned off and the transient voltage feedback circuit that is turned on.

3. The medium-voltage silicon carbide module active gate driver with state feedback according to claim 2, characterized in that: The shutdown transient voltage feedback circuit is used to obtain the drain-source voltage feedback during the shutdown transient of the SiC MOSFET module; the turn-on transient voltage feedback circuit is used to obtain the feedback of the drain current rise rate during the turn-on transient of the SiC MOSFET module. The level conversion circuit is used to receive the output signal of the high-speed digital processor and output the corresponding voltage; the resistor push-pull circuit is used to receive the voltage signal of the level conversion circuit and turn on the resistor with the corresponding resistance value.

4. The medium-voltage silicon carbide module active gate driver with state feedback according to claim 1, characterized in that: The turn-off transient voltage feedback circuit includes a resistor. ,resistance Comparison operational amplifier The resistor One end is connected to the drain of the SiC MOSFET module, and the resistor... One end is connected to the source of the SiC MOSFET module, and the resistor... The other end is connected to a resistor The other end and the comparator operational amplifier The inverting input terminal of the comparator operational amplifier The output terminal is connected to a level converter via a high-speed digital processor. and level converter Comparison operational amplifier Non-inverting input threshold voltage .

5. The medium-voltage silicon carbide module active gate driver with state feedback according to claim 1, characterized in that: The turn-on transient voltage feedback circuit includes an inductor. ,capacitance Comparison operational amplifier ,inductance One end is connected to the auxiliary source of the SiC MOSFET module and the capacitor. One end and the comparator operational amplifier The non-inverting input terminal, inductor The other end is connected to the power source and capacitor of the SiC MOSFET module. The other end; the comparator operational amplifier The inverting input terminal input threshold voltage Comparison operational amplifier The output terminal is connected to a level converter via a high-speed digital processor. and level converter .

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