Semiconductor process chamber and semiconductor process apparatus

Abstract

This invention discloses a semiconductor process chamber and semiconductor process equipment. The disclosed semiconductor process chamber includes a base, a support shaft for supporting the base, and a preheating ring arranged around the base and spaced horizontally from the base. The semiconductor process chamber also includes a position detection device. The position detection device includes multiple detection components, each of which includes a first conductive element, a second conductive element corresponding to the first conductive element, and a detection circuit. The second conductive elements in the multiple detection components are uniformly fixed to the shaft wall of the support shaft along the circumference. The first end of each first conductive element is fixedly connected to the preheating ring, and the second end of the first conductive element is close to and spaced from the first end of the corresponding second conductive element. The distance between the second end of each first conductive element and the first end of the corresponding second conductive element is a preset distance, which is less than the horizontal spacing between the preheating ring and the base.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more particularly to a semiconductor process chamber and semiconductor process equipment. Background Technology

[0002] Chemical vapor deposition (CVD) is a technique that uses different process gases to react with each other at a certain temperature to generate solid materials that are deposited on the surface of a substrate (such as a wafer) to form a thin film.

[0003] When a semiconductor process chamber performs chemical vapor deposition (CVD) on a wafer placed on a substrate, a preheating ring surrounding the substrate is needed to heat the process gas to ensure its temperature meets the requirements of the chemical reaction. The horizontal distance between the substrate and the preheating ring affects the uniformity of the gas flow field on the substrate surface, thus impacting the processing results of the wafer on the substrate. Therefore, during the semiconductor process chamber's operation, it is crucial to ensure the consistency of the horizontal distance between the substrate and the preheating ring (i.e., the horizontal distance between the substrate and the preheating ring must remain within a predetermined range at any given location).

[0004] However, in related technologies, to ensure the consistency of the horizontal distance between the base and the preheating ring, it is usually necessary to detect the horizontal distance between the base and the preheating ring using a dedicated measuring device when the semiconductor process chamber is under maintenance. Since detecting the horizontal distance between the base and the preheating ring requires a dedicated measuring device during the semiconductor process chamber's maintenance phase, and it is impossible to detect the horizontal distance between the base and the preheating ring in real time during the process, it is easy to continue the process when the horizontal distance between the base and the preheating ring is inconsistent, leading to the generation of waste wafers. Summary of the Invention

[0005] This invention discloses a semiconductor process chamber and semiconductor process equipment to solve the problem of waste wafers being generated in the semiconductor process chamber during the process due to poor consistency in the horizontal distance between the base and the preheating ring.

[0006] To solve the above-mentioned technical problems, the present invention is implemented as follows:

[0007] In a first aspect, this application discloses a semiconductor process chamber, including a base, a support shaft for supporting the base, and a preheating ring disposed around the base and spaced horizontally from the base; the semiconductor process chamber further includes a position detection device;

[0008] The position detection device includes multiple detection components, each of which includes a first conductive element, a second conductive element corresponding to the first conductive element, and a detection circuit.

[0009] The second conductive element in the plurality of detection components is uniformly fixed to the shaft wall of the support shaft along the circumference of the support shaft.

[0010] The first end of each of the first conductive elements is fixedly connected to the preheating ring, and the second end of the first conductive element is close to the first end of the corresponding second conductive element and is spaced apart from the first end of the second conductive element.

[0011] The distance between the second end of each of the first conductive elements and the first end of the corresponding second conductive element is a preset distance, which is less than the horizontal distance between the preheating ring and the base.

[0012] The detection circuit is electrically connected to the first end of the first conductive element and the second end of the second conductive element, respectively. The detection circuit is triggered when the second end of the first conductive element comes into contact with the corresponding first end of the second conductive element.

[0013] Secondly, this application also discloses a semiconductor process apparatus, including the semiconductor process chamber described in the first aspect.

[0014] The technical solution adopted in this invention can achieve the following technical effects:

[0015] In this embodiment of the application, by setting multiple detection components, the second conductive element in the multiple detection components is uniformly fixed on the shaft wall of the support shaft along the circumference of the support shaft. The first end of each first conductive element is fixedly connected to the preheating ring, and the second end of the first conductive element is close to the first end of the corresponding second conductive element and is spaced apart from the first end of the second conductive element. Thus, the relative movement between the second end of the first conductive element and the first end of the second conductive element indirectly indicates the relative movement between the preheating ring and the base. By electrically connecting the detection circuit to the first end of the first conductive element and the second end of the second conductive element respectively, the detection circuit is triggered when the second end of the first conductive element contacts the first end of the corresponding second conductive element. This indicates that the distance between the base and the preheating ring corresponding to the triggered detection circuit does not meet the process requirements, meaning that the consistency of the distance between the base and the preheating ring at different positions is poor and does not meet the process requirements. This allows for timely detection of inconsistent distances between the base and the preheating ring at different positions during semiconductor process chamber manufacturing, enabling timely intervention and preventing the generation of waste wafers due to inconsistent distances between the base and the preheating ring at different positions. By setting the preset distance between the second end of each first conductive element and the first end of the corresponding second conductive element to be less than the horizontal spacing between the preheating ring and the base, the problem of the base and the preheating ring already contacting when the detection circuit is triggered can be avoided, thus preventing damage to the base and the wafer located on the base. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of a semiconductor process chamber disclosed in an embodiment of the present invention;

[0017] Figure 2 This is a schematic diagram of the detection device disclosed in an embodiment of the present invention;

[0018] Figure 3 This is a schematic diagram showing the cooperation of the first conductive element, the second conductive element, and the support shaft disclosed in an embodiment of the present invention.

[0019] Explanation of reference numerals in the attached figures:

[0020] 100-Base;

[0021] 200 - Preheating ring;

[0022] 310 - First conductive element; 311 - First conductive part; 312 - Second conductive part;

[0023] 320 - Second conductive element; 321 - Third conductive part; 322 - Fourth conductive part;

[0024] 330 - Detection circuit; 331 - Power supply; 332 - Electromagnetic switch; 333 - First electromagnetic coil; 334 - Transistor; 335 - Current limiting resistor;

[0025] 400-Support Shaft;

[0026] 510 - Chamber body; 520 - Chamber top cover;

[0027] 600-Controller;

[0028] 700 - Position adjustment device. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0030] The technical solutions disclosed in the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0031] Please refer to Figures 1 to 3 This invention discloses a semiconductor process chamber, which mainly includes: a base 100, a support shaft 400 for supporting the base 100, and a preheating ring 200 arranged around the base 100 and spaced horizontally from the base 100. The preheating ring 200 can absorb heat from a heat source and radiate it to the vicinity of the edge of the base 100 to achieve uniform heating of the base 100 and the process gas inside the process chamber.

[0032] The semiconductor process chamber may also include a position detection device. The position detection device includes multiple detection components, each including a first conductive element 310, a second conductive element 320 corresponding to the first conductive element 310, and a detection circuit 330. Wherein:

[0033] The second conductive element 320 in the multiple detection components is uniformly fixed to the shaft wall of the support shaft 400 along the circumference of the support shaft 400. Each second conductive element 320 can extend along the axial direction of the support shaft 400.

[0034] Each first conductive element 310 has its first end fixedly connected to the preheating ring 200, and its second end is close to and spaced apart from the first end of the corresponding second conductive element 320. It should be noted that the first conductive element 310 is a rigid structure and its shape does not change when not subjected to external force.

[0035] The distance between the second end of each first conductive element 310 and the first end of the corresponding second conductive element 320 is a preset distance, which is less than the horizontal spacing between the preheating ring 200 and the base 100.

[0036] The detection circuit 330 is electrically connected to the first end of the first conductive element 310 and the second end of the second conductive element 320, respectively. The detection circuit 330 is triggered when the second end of the first conductive element 310 contacts the first end of the corresponding second conductive element 320. Specifically, when the second end of the first conductive element 310 contacts the first end of the corresponding first conductive element 310, the detection circuit 330, the first conductive element 310, and the first conductive element 320 form a closed loop, thereby triggering the detection circuit 330.

[0037] In practical implementation, the horizontal distance between the base 100 and the preheating ring 200 affects the uniformity of the airflow field on the surface of the base 100, thereby affecting the process results of the wafer located on the base 100. When the distance between the base 100 and the preheating ring 200 has good consistency at different positions, the airflow field on the surface of the base 100 can have better uniformity.

[0038] In this embodiment, when the relative position of the base 100 and the preheating ring 200 changes, the relative position of the first conductive element 310 and the second conductive element 320 will also change. Therefore, the relative movement between the preheating ring 200 and the base 100 can be determined by detecting the relative movement between the second end of the first conductive element 310 and the first end of the second conductive element 320. Even when the second ends of multiple first conductive elements 310 are not in contact with the first ends of their corresponding second conductive elements 320, the distance between the base 100 and the preheating ring 200 at different positions meets the process requirements, and the distance between the base 100 and the preheating ring 200 exhibits good consistency at different positions. When the second end of the first conductive element 310 contacts the first end of the corresponding second conductive element 320, it indicates that the base 100 and the preheating ring 200 are close to each other at the position corresponding to the first conductive element 310 by a preset distance, making the distance relatively close. On the other hand, the distance between the base 100 and the preheating ring 200 on the opposite side is relatively far, thus failing to meet the requirement that the distance between the base 100 and the preheating ring 200 has good consistency at different positions. The preset distance is a distance set by humans and can be set according to different requirements for consistency. For example, the preset distance can be 0.1mm.

[0039] In this embodiment of the application, by setting multiple detection components, the second conductive element 320 in the multiple detection components is uniformly fixed on the shaft wall of the support shaft 400 along the circumference of the support shaft 400. The first end of each first conductive element 310 is fixedly connected to the preheating ring 200, and the second end of the first conductive element 310 is close to the first end of the corresponding second conductive element 320 and is spaced apart from the first end of the second conductive element 320. Thus, the relative movement between the second end of the first conductive element 310 and the first end of the second conductive element 320 indirectly indicates the relative movement between the preheating ring 200 and the base 100. By electrically connecting the detection circuit 330 to the first end of the first conductive element 310 and the second end of the second conductive element 320 respectively, the detection circuit 330 is triggered when the second end of the first conductive element 310 contacts the first end of the corresponding second conductive element 320. This indicates that the distance between the base 100 and the preheating ring 200 corresponding to the triggered detection circuit 330 does not meet the process requirements, meaning that the consistency of the distance between the base 100 and the preheating ring 200 at different positions is poor and does not meet the process requirements. This allows for timely detection of poor consistency of the distance between the base 100 and the preheating ring 200 at different positions during the semiconductor process chamber process, and timely handling to avoid the generation of waste wafers due to poor consistency of the distance between the base 100 and the preheating ring 200 at different positions. By setting the preset distance between the second end of each first conductive element 310 and the first end of the corresponding second conductive element 320 to be less than the horizontal spacing between the preheating ring 200 and the base 100, the problem of the base 100 and the preheating ring 200 already contacting each other when the detection circuit 330 is triggered can be avoided, thereby avoiding damage to the base 100 and the wafer located on the base 100.

[0040] To avoid unstable contact between the second end of the first conductive element 310 and the first end of the second conductive element 320, which could lead to unstable triggering of the detection circuit 330 and potential false triggering, the first conductive element 310 may optionally include a first conductive portion 311 and a second conductive portion 312. The first end of the first conductive portion 311 can be the first end of the first conductive element 310, and the second end of the first conductive portion 311 can be connected to the first end of the second conductive portion 312. The second end of the second conductive portion 312 can be the second end of the first conductive element 310. The extending direction of the second conductive portion 312 is parallel to the extending direction of the corresponding second conductive element 320. The distance between the second conductive portion 312 and the second conductive element 320 is a preset distance, and the first conductive portion 311 is connected between the second conductive portion 312 and the preheating ring 200.

[0041] It should be noted that the distance between the second end of the second conductive part 312 and the first end of the corresponding second conductive member 320 is a preset distance. Since the extension direction of the second conductive part 312 is parallel to the extension direction of the corresponding second conductive member 320, the distance between the second conductive part 312 and the second conductive member 320 at any position is the preset distance. When the second end of the first conductive member 310 contacts the first end of the corresponding second conductive member 320, the second conductive part 312 and the second conductive member 320 are attached in the extension direction of the second conductive member 320.

[0042] The semiconductor process chamber disclosed in this application configures the first conductive element 310 to include a first conductive portion 311 and a second conductive portion 312, such that the first end of the first conductive portion 311 is the first end of the first conductive element 310, the second end of the first conductive portion 311 is connected to the first end of the second conductive portion 312, and the second end of the second conductive portion 312 is the second end of the first conductive element 310. By arranging the extension direction of the second conductive portion 312 parallel to the extension direction of the corresponding second conductive element 320, when the second end of the first conductive element 310 contacts the first end of the corresponding second conductive element 320, the second conductive portion 312 and the second conductive element 320 are in contact in the extension direction of the second conductive element 320. This avoids the problem of unstable triggering of the detection circuit 330 due to the small contact area when the second end of the first conductive element 310 contacts the first end of the second conductive element 320, thereby effectively preventing false triggering of the detection circuit 330.

[0043] To make the arrangement of the second conductive element 320 more stable, the second conductive element 320 may optionally be a conductive metal layer printed on the shaft wall of the support shaft 400.

[0044] The semiconductor process chamber disclosed in this application sets the second conductive element 320 as a conductive metal layer printed on the shaft wall of the support shaft 400, so that the second conductive element 320 can be stably arranged on the shaft wall of the support shaft 400. Moreover, printing the second conductive element 320 on the shaft wall of the support shaft 400 is beneficial to the overall integrity of the support shaft 400 and the second conductive element 320.

[0045] In one optional embodiment, the detection circuit 330 may include a power supply 331, an electromagnetic switch 332, and a first electromagnetic coil 333. The power supply 331 may be electrically connected to the electromagnetic switch 332, the first conductive element 310, and the second conductive element 320. The first electromagnetic coil 333 may be electrically connected to the second conductive element 320, and the first electromagnetic coil 333 may be used to energize and generate a magnetic field when the second end of the first conductive element 310 contacts the first end of the corresponding second conductive element 320. The electromagnetic switch 332 may be used to close under the drive of the magnetic field generated by the first electromagnetic coil 333, so that the detection circuit 330 forms a loop and is in a working state.

[0046] The semiconductor process chamber disclosed in this application configures the detection circuit 330 as including a power supply 331, an electromagnetic switch 332, and a first electromagnetic coil 333. The power supply 331 is electrically connected to the electromagnetic switch 332, the first conductive element 310, and the second conductive element 320, respectively. The first electromagnetic coil 333 is electrically connected to the second conductive element 320. When the second end of the first conductive element 310 contacts the first end of the corresponding second conductive element 320, the first electromagnetic coil 333 generates a magnetic field. This causes the electromagnetic switch 332 to close under the drive of the magnetic field generated by the first electromagnetic coil 333, so that the detection circuit 330 forms a loop and is in working state, thereby triggering the detection circuit 330.

[0047] It should be noted that the electromagnetic switch 332 can be connected in parallel with the first conductive element 310 and the second conductive element 320, or it can be connected in series with the first conductive element 310 and the second conductive element 320. The embodiments of this application do not limit the connection method of the power supply 331, the electromagnetic switch 332, the first conductive element 310 and the second conductive element 320.

[0048] In another embodiment, the detection circuit 330 may include a power supply 331, a current sensor or a voltage sensor. The power supply 331, the first conductive element 310, the second conductive element 320, and the current sensor or voltage sensor are connected in series. When the first conductive element 310 and the second conductive element 320 are in contact, the detection circuit forms a loop, and the current sensor or voltage sensor detects the corresponding current or voltage, thereby triggering the detection circuit 330. Of course, the detection circuit 330 can also have other structures, and the embodiments of this application do not limit the specific structure of the detection circuit 330.

[0049] Optionally, the first end of the first electromagnetic coil 333 can be electrically connected to the second end of the second conductive element 320, and the power supply 331 can be electrically connected to the second end of the second conductive element 320 through the first electromagnetic coil 333. When the second end of the first conductive element 310 contacts the first end of the corresponding second conductive element 320, the power supply 331, the first conductive element 310, the second conductive element 320, and the first electromagnetic coil 333 form a closed circuit.

[0050] The semiconductor process chamber disclosed in this application allows the first end of the first electromagnetic coil 333 to be electrically connected to the second end of the second conductive element 320, so that the power supply 331 can be electrically connected to the second end of the second conductive element 320 through the first electromagnetic coil 333, thereby making the layout of the detection circuit 330 relatively simple.

[0051] In another embodiment, the second conductive element 320 may include a third conductive portion 321 and a fourth conductive portion 322. The first end of the third conductive portion 321 is the first end of the second conductive element 320, and the second end of the third conductive portion 321 is electrically connected to the first end of the first electromagnetic coil 333. The second end of the fourth conductive portion 322 is the second end of the second conductive element 320, and the first end of the fourth conductive portion 322 is electrically connected to the second end of the first electromagnetic coil 333.

[0052] The semiconductor process chamber disclosed in this application configures the second conductive element 320 to include a third conductive part 321 and a fourth conductive part 322. The second end of the third conductive part 321 is electrically connected to the first end of the first electromagnetic coil 333, and the first end of the fourth conductive part 322 is electrically connected to the second end of the first electromagnetic coil 333. This allows the first electromagnetic coil 333 to occupy part of the structure of the second conductive element 320 for its arrangement, thereby facilitating the compactness of the detection component.

[0053] Optionally, the first electromagnetic coil 333 can be printed on the shaft wall of the support shaft 400, thereby making the setting of the first electromagnetic coil 333 more stable and improving the overall integrity of the support shaft 400 and the first electromagnetic coil 333. The first electromagnetic coil 333 can be printed using copper wire with a diameter of 0.01mm. The first electromagnetic coil 333 can be an air-core inductor structure. The width of the first electromagnetic coil 333 can be 2mm, and the spacing between each layer of the first electromagnetic coil 333 can be 2mm. The first electromagnetic coil 333 can include 5 layers of coils. The length of the first electromagnetic coil 333 can be adapted to the length of the electromagnetic switch 332.

[0054] To protect the detection circuit 330, the semiconductor process chamber may optionally include a chamber body 510. The base 100, support shaft 400, and preheating ring 200 may all be located inside the chamber body 510, while the power supply 331 and electromagnetic switch 332 may all be located outside the chamber body 510.

[0055] The semiconductor process chamber disclosed in this application avoids corrosion of the power supply 331 and electromagnetic switch 332 by placing the power supply 331 and electromagnetic switch 332 outside the chamber body 510, thereby facilitating the protection of the power supply 331 and electromagnetic switch 332 by the process gas inside the chamber body 510.

[0056] Specifically, the semiconductor process chamber may also include a chamber cover 520, the chamber cover 520 and the chamber body 510 forming a process cavity. The chamber cover 520 and the chamber body 510 may have an inlet and an outlet for process gas, so that the process gas enters the process cavity from the inlet and is discharged from the outlet, thereby realizing the wafer processing and maintaining the pressure in the process cavity.

[0057] In the semiconductor process chamber process, to promptly adjust the distance between the base 100 and the preheating ring 200 after the detection circuit 330 is triggered, and to avoid the problem of waste wafers caused by poor consistency in the distance between the base 100 and the preheating ring 200 at different positions, the semiconductor process chamber may optionally include a controller 600 and a position adjustment device 700. The position adjustment device 700 can be connected to the support shaft 400, and the controller 600 can be connected to both the position adjustment device 700 and the detection circuit 330. The controller 600 can be used to confirm the relative positional relationship between the preheating ring 200 and the base 100 when the detection circuit 330 is triggered, and control the position adjustment device 700 to adjust the position of the support shaft 400 according to the relative positional relationship.

[0058] The semiconductor process chamber setup controller 600 and position adjustment device 700 disclosed in this application embodiment are configured such that the position adjustment device 700 is connected to the support shaft 400, and the controller 600 is connected to both the position adjustment device 700 and the detection circuit 330. This allows the controller 600 to confirm the relative positional relationship between the preheating ring 200 and the base 100 when the detection circuit 330 is triggered, and to control the position adjustment device 700 to adjust the position of the support shaft 400 based on the relative positional relationship. This ensures that the distance between the preheating ring 200 and the base 100 at any position meets the process requirements.

[0059] It should be noted that the triggering of the detection circuit 330 indicates that the second end of the first conductive element 310 is in contact with the first end of the corresponding second conductive element 320. This indicates that the consistency of the distance between the preheating ring 200 and the base 100 at any position does not meet the process requirements. When the controller 600 controls the position adjustment device 700 to adjust the position of the support shaft 400, as long as the second end of all the first conductive elements 310 is separated from the first end of the corresponding second conductive element 320, it indicates that the consistency of the distance between the preheating ring 200 and the base 100 at any position meets the process requirements. Specifically, when the second end of any first conductive element 310 is in contact with the first end of the corresponding second conductive element 320, the controller 600 can control the support shaft 400 to move away from the side where the first conductive element 310 and the second conductive element 320 are in contact, until the second end of the first conductive element 310 is separated from the first end of the corresponding second conductive element 320, and then the drive of the support shaft 400 to move stops.

[0060] Specifically, the position adjustment device 700 may include a servo motor or a stepper motor. Of course, the position adjustment device 700 can also have other structures; this application does not limit the specific structure of the position detection device 700. This application also discloses a semiconductor process apparatus, which includes the semiconductor process chamber disclosed in the above embodiments. By setting the semiconductor process chamber disclosed in the above embodiments, the semiconductor process apparatus disclosed in this application can avoid the generation of waste wafers due to poor consistency in the distance between the base 100 and the preheating ring 200 at different positions.

[0061] To provide a corresponding trigger signal to the controller 600 when the detection circuit 330 is triggered, the detection circuit 330 may optionally include a transistor 334. The transistor 334 can be connected in series with the electromagnetic switch 332, and the controller 600 can be connected to the transistor 334. When the electromagnetic switch 332 is closed, the power supply 331, the electromagnetic switch 332, and the transistor 334 form a circuit, and the transistor 334 can output a high-level signal to the controller 600. After receiving the high-level signal from the transistor 334, the controller 600 can confirm the relative positional relationship between the preheating ring 200 and the base 100, and thus control the position adjustment device 700 to adjust the position of the support shaft 400, so that the distance between the base 100 and the preheating ring 200 has good consistency at different positions.

[0062] In the embodiment where the power supply 331 is electrically connected to the first conductive element 310 and the second conductive element 320, and the first electromagnetic coil 333 is electrically connected to the second conductive element 320, in order for the first electromagnetic coil 333 to generate a large magnetic field to drive the electromagnetic switch 332 to close, the power supply 331 needs to have a high output voltage, for example, the output voltage of the power supply 331 can be 24V, 36V, etc. However, the transistor 334 requires a relatively small voltage to conduct, for example, the conduction voltage of the transistor 334 can be 0.5V, 0.7V, etc. To avoid the voltage across the transistor 334 being too high, the detection circuit 330 may optionally include a current-limiting resistor 335. The current-limiting resistor 335 can be connected in series with the transistor 334. The setting of the current-limiting resistor 335 can reduce the current flowing through the transistor 334, thereby making the voltage across the transistor 334 relatively small.

[0063] The above embodiments of the present invention focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0064] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.

Claims

1. A semiconductor process chamber, comprising: A base (100), a support shaft (400) for supporting the base (100), and a preheating ring (200) arranged around the base (100) and spaced horizontally from the base (100); characterized in that the semiconductor process chamber further includes a position detection device; The position detection device includes multiple detection components, each of which includes a first conductive element (310), a second conductive element (320) corresponding to the first conductive element (310), and a detection circuit (330). The second conductive element (320) in the plurality of detection components is uniformly fixed to the shaft wall of the support shaft (400) along the circumference of the support shaft (400); The first end of each of the first conductive elements (310) is fixedly connected to the preheating ring (200), and the second end of the first conductive element (310) is close to the first end of the corresponding second conductive element (320) and is spaced apart from the first end of the second conductive element (320). The distance between the second end of each of the first conductive elements (310) and the first end of the corresponding second conductive element (320) is a preset distance, which is less than the horizontal spacing between the preheating ring (200) and the base (100). The detection circuit (330) is electrically connected to the first end of the first conductive element (310) and the second end of the second conductive element (320), respectively. The detection circuit (330) is triggered when the second end of the first conductive element (310) comes into contact with the first end of the corresponding second conductive element (320).

2. The semiconductor process chamber according to claim 1, characterized in that, The first conductive element (310) includes a first conductive part (311) and a second conductive part (312). The first end of the first conductive part (311) is the first end of the first conductive element (310). The second end of the first conductive part (311) is connected to the first end of the second conductive part (312). The second end of the second conductive part (312) is the second end of the first conductive element (310). The extension direction of the second conductive part (312) is parallel to the extension direction of the corresponding second conductive member (320), and the distance between the second conductive part (312) and the second conductive member (320) is the preset distance; The first conductive part (311) is connected between the second conductive part (312) and the preheating ring (200).

3. The semiconductor process chamber according to claim 1, characterized in that, The second conductive element (320) is a conductive metal layer printed on the shaft wall of the support shaft (400).

4. The semiconductor process chamber according to claim 1, characterized in that, The detection circuit (330) includes a power supply (331), an electromagnetic switch (332), and a first electromagnetic coil (333); The power supply (331) is electrically connected to the electromagnetic switch (332), the first conductive element (310), and the second conductive element (320), respectively; The first electromagnetic coil (333) is electrically connected to the second conductive element (320). The first electromagnetic coil (333) is used to energize and generate a magnetic field when the second end of the first conductive element (310) contacts the first end of the corresponding second conductive element (320). The electromagnetic switch (332) is used to close under the drive of the magnetic field generated by the first electromagnetic coil (333), so that the detection circuit (330) forms a loop and is in working state.

5. The semiconductor process chamber according to claim 4, characterized in that, The first end of the first electromagnetic coil (333) is electrically connected to the second end of the second conductive element (320), and the power supply (331) is electrically connected to the second end of the second conductive element (320) through the first electromagnetic coil (333).

6. The semiconductor process chamber according to claim 4, characterized in that, The second conductive element (320) includes a third conductive portion (321) and a fourth conductive portion (322); The first end of the third conductive part (321) is the first end of the second conductive element (320), and the second end of the third conductive part (321) is electrically connected to the first end of the first electromagnetic coil (333). The second end of the fourth conductive part (322) is the second end of the second conductive element (320), and the first end of the fourth conductive part (322) is electrically connected to the second end of the first electromagnetic coil (333).

7. The semiconductor process chamber according to claim 4, characterized in that, The first electromagnetic coil (333) is printed on the shaft wall of the support shaft (400).

8. The semiconductor process chamber according to claim 4, characterized in that, The semiconductor process chamber includes a chamber body (510), the base (100), the support shaft (400) and the preheating ring (200) are all located inside the chamber body (510), and the power supply (331) and the electromagnetic switch (332) are located outside the chamber body (510).

9. The semiconductor process chamber according to claim 5, characterized in that, The semiconductor process chamber also includes a controller (600) and a position adjustment device (700); The position adjustment device (700) is connected to the support shaft (400), and the controller (600) is connected to the position adjustment device (700) and the detection circuit (330) respectively; The controller (600) is used to confirm the relative positional relationship between the preheating ring (200) and the base (100) when the detection circuit (330) is triggered, and to control the position adjustment device (700) to adjust the position of the support shaft (400) according to the relative positional relationship.

10. A semiconductor process apparatus, characterized in that, Includes the semiconductor process chamber as described in any one of claims 1 to 9.

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