Light emitting diode and light emitting device

Abstract

This application provides a light-emitting diode (LED) and a light-emitting device. The LED's semiconductor stack has a first light-emitting region, a second light-emitting region, and a spacer region disposed between the first and second light-emitting regions. The first light-emitting region is electrically connected to a first electrode and a second electrode, and the second light-emitting region is electrically connected to a second electrode and a third electrode. The first and second light-emitting regions share a second electrode, and their luminous brightness differs. The first and third electrodes are controlled independently, enabling individual control of the first and second light-emitting regions. Furthermore, since a single LED contains two independently controlled light-emitting regions, the capacity can be reduced by 5% to 30%, which is beneficial for the integration and miniaturization of LEDs in devices. The different luminous brightness of the first and second light-emitting regions allows for dynamic switching between high and low brightness within a single LED, contributing to more compact and efficient lighting.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device technology, and in particular to a light-emitting diode and a light-emitting device. Background Technology

[0002] A light-emitting diode (LED) is a semiconductor light-emitting device with high conversion efficiency, and it is widely used in lighting, display devices, automobiles, communications and other fields.

[0003] Existing LED integration typically employs parallel or series connection of individual chips. While this approach satisfies lighting and display needs to some extent, it increases manufacturing costs. Each additional chip requires extra connection and packaging processes, increasing material costs and raising the complexity and error rate of the production process. Furthermore, the existing parallel or series connection method for individual chips occupies relatively large space, hindering miniaturization and integration. Modern electronic device design demands extremely high space utilization efficiency, and the existing parallel or series connection method for individual chips limits the application of LED chips in more compact devices.

[0004] In order to reduce the capacity of light-emitting diodes and achieve miniaturization and integration, this application provides a light-emitting diode and a light-emitting device. Summary of the Invention

[0005] In view of the defects and shortcomings of existing light-emitting diodes, this application provides a light-emitting diode and a light-emitting device. The semiconductor stack of the light-emitting diode includes a first light-emitting region and a second light-emitting region. The first light-emitting region and the second light-emitting region can be controlled independently, and the light-emitting brightness of the first light-emitting region and the second light-emitting region are different. Compared with the integration method of parallel or series connection of single chips, the light-emitting diode can reduce the capacity by 5% to 30%, which is beneficial to miniaturization and integration; at the same time, it can realize dynamic switching between high and low brightness.

[0006] One embodiment of this application provides a light-emitting diode, which includes at least a semiconductor stack, the semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer stacked sequentially;

[0007] The semiconductor stack has a first light-emitting region, a second light-emitting region, and a spacer region disposed between the first light-emitting region and the second light-emitting region. The first light-emitting region is electrically connected to a first electrode and a second electrode, and the second light-emitting region is electrically connected to a second electrode and a third electrode. The light-emitting brightness of the first light-emitting region and the second light-emitting region is different.

[0008] According to another embodiment of this application, a light-emitting device is provided, including a circuit board and a plurality of light-emitting units disposed on the circuit board, wherein the light-emitting units include the light-emitting diodes described in this application.

[0009] As described above, the light-emitting diode and light-emitting device of this application have the following beneficial effects:

[0010] The semiconductor stack of the light-emitting diode of this application includes a first light-emitting region and a second light-emitting region. The first and second light-emitting regions can be controlled independently, providing more flexible brightness adjustment and color mixing capabilities to adapt to different application scenarios. Compared with the existing integration method of parallel or series connection of single chips, the light-emitting diode of this application can reduce the capacity by 5% to 30%, making it more suitable for miniaturized and high-density integrated electronic devices, and helping to promote the development of electronic devices towards more compact designs. The light emission brightness of the first and second light-emitting regions is different, and dynamic switching between high and low brightness can be achieved in a single light-emitting diode, which helps to achieve more compact and efficient lighting. Attached Figure Description

[0011] Figure 1 The diagram shown is a top view of a two-LED assembly in the prior art.

[0012] Figure 2 The diagram shown is a top view of a light-emitting diode provided in Embodiment 1 of this application.

[0013] Figure 3 Displayed as Figure 2 A schematic diagram of the cross-sectional structure along the AA direction.

[0014] Figure 4 The diagram shown is a top view of another light-emitting diode provided in Embodiment 1 of this application.

[0015] Figure 5 Displayed as Figure 4 A schematic diagram of the cross-sectional structure along the BB direction.

[0016] Figure 6 The diagram shown is a top view of another light-emitting diode provided in Embodiment 1 of this application.

[0017] Figure 7 Displayed as Figure 6 A schematic diagram of the cross-sectional structure along the CC direction.

[0018] Figure 8 The diagram shown is a top view of the light-emitting diode provided in Embodiment 2 of this application.

[0019] Figure 9 The diagram shown is a schematic diagram of the light-emitting device provided in Embodiment 3 of this application.

[0020] Component designation explanation

[0021] 01, Light Emitting Diode; 10, Circuit Board; 20, Light Emitting Unit; 100, Semiconductor Stack; 101, First Light Emitting Region; 102, Second Light Emitting Region; 103, Spacer Region; 110, First Semiconductor Layer; 120, Active Layer; 130, Second Semiconductor Layer; 200, Conductive Layer; 210, First Electrode; 220, Third Electrode; 230, Passivation Protection Layer; 300, First Insulating Layer; 310, Through Hole; 400, Reflective Layer; 500, Electrical Connection Layer; 600, Second Insulating Layer; 700, Metal Layer; 710, First Conductive Hole; 720, Second Conductive Hole; 800, Substrate; 900, Encapsulation Layer; 910, First Phosphor Layer; 920, Second Phosphor Layer. Detailed Implementation

[0022] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0023] This application provides a light-emitting diode, comprising at least a semiconductor stack, wherein the semiconductor stack includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially.

[0024] The semiconductor stack has a first light-emitting region, a second light-emitting region, and a spacer region disposed between the first light-emitting region and the second light-emitting region. The first light-emitting region is electrically connected to a first electrode and a second electrode, and the second light-emitting region is electrically connected to a second electrode and a third electrode. The light-emitting brightness of the first light-emitting region and the second light-emitting region is different.

[0025] The semiconductor stack of the light-emitting diode provided in this embodiment includes a first light-emitting region and a second light-emitting region. The first and second light-emitting regions can be controlled independently, enabling finer brightness adjustment to meet dynamic lighting and display needs. Compared with the parallel or series integration of single chips in the prior art, the light-emitting diode of this embodiment can reduce the capacity by 5% to 30%. The reduction in capacity makes the light-emitting diode more suitable for use in miniaturized and high-density integrated electronic devices, helping to promote the development of electronic devices towards more compact designs. Due to the reduction in the number of chips and the simplification of the connection process, the light-emitting diode of this embodiment can reduce material and production costs, providing higher cost-effectiveness. The reduced number of chips and optimized layout design improve space utilization, allowing the light-emitting diode to be integrated more effectively into a limited space. The light-emitting brightness of the first and second light-emitting regions in the light-emitting diode of this embodiment is different, enabling dynamic switching between high and low brightness to meet different lighting needs and environmental conditions, which helps to achieve more compact and efficient lighting.

[0026] In some embodiments, corresponding to the first light-emitting area, a conductive layer, a first insulating layer, and a reflective layer are sequentially stacked on the surface of the second semiconductor layer away from the active layer. The first insulating layer has at least one via. The reflective layer is stacked on the surface of the first insulating layer away from the conductive layer and disposed in the via. The reflective layer is electrically connected to the conductive layer.

[0027] Corresponding to the second light-emitting region, the conductive layer and the reflective layer are sequentially stacked on the surface of the second semiconductor layer away from the active layer.

[0028] This embodiment achieves higher luminous brightness in the first luminous region than in the second luminous region by sequentially setting a conductive layer and a reflective layer in the second luminous region, and setting a first insulating layer with through holes between the conductive layer and the reflective layer in the first luminous region. This enables dynamic switching between high and low brightness in a single light-emitting diode, which helps reduce the integrated capacity of the light-emitting diode.

[0029] The diameter of the through hole is between 1 μm and 100 μm, and the thickness of the first insulating layer is less than 1 μm.

[0030] In some embodiments, the width of the interval region is between 1µm and 100µm.

[0031] This embodiment reduces the capacity of the light-emitting diode by 5% to 30% by limiting the width of the spacing area.

[0032] In some embodiments, the spacer region includes a groove that extends through the second semiconductor layer, the active layer, and a portion of the first semiconductor layer.

[0033] In some embodiments, corresponding to the first light-emitting area and the second light-emitting area, a second insulating layer and a metal layer are sequentially stacked on the surface of the reflective layer away from the semiconductor stack.

[0034] In some embodiments, the sidewall of the groove is provided with a second insulating layer, and the sidewall of the second insulating layer in the groove and the contact area between the groove and the first semiconductor layer are provided with the metal layer, and the metal layer is electrically connected to the first semiconductor layer.

[0035] In this embodiment, the groove sidewall is provided with a second insulating layer and a metal layer from the outside to the inside, so that the first light-emitting area and the second light-emitting area can share one electrode, and the first light-emitting area and the second light-emitting area can be controlled separately.

[0036] In some embodiments, an electrical connection layer is provided between the reflective layer and the second insulating layer, corresponding to the first light-emitting area and the second light-emitting area.

[0037] In some embodiments, a substrate is disposed on the surface of the metal layer opposite to the second insulating layer, the substrate including a first region and a second region surrounding the first region; the semiconductor stack corresponds to the first region;

[0038] The electrical connection layer, the second insulating layer, and the metal layer all extend from the first region to the second region. The surface of the electrical connection layer that is not covered by the semiconductor stack is provided with the first electrode and the third electrode away from the second insulating layer.

[0039] In some embodiments, corresponding to the first light-emitting region, at least one first conductive hole is provided in the semiconductor stack. The first conductive hole penetrates the second semiconductor layer, the active layer, and a portion of the first semiconductor layer. A second insulating layer is provided on the sidewall of the first conductive hole. The metal layer is provided on the sidewall of the second insulating layer in the first conductive hole and at the contact point between the first conductive hole and the first semiconductor layer.

[0040] In some embodiments, corresponding to the second light-emitting region, at least one second conductive hole is provided in the semiconductor stack. The second conductive hole penetrates the second semiconductor layer, the active layer, and a portion of the first semiconductor layer. A second insulating layer is provided on the sidewall of the second conductive hole. The metal layer is provided on the sidewall of the second insulating layer in the second conductive hole and at the contact point between the second conductive hole and the first semiconductor layer.

[0041] In some embodiments, an encapsulation layer is disposed on the surface of the first semiconductor layer opposite to the active layer;

[0042] Corresponding to the first light-emitting region, the encapsulation layer includes a first fluorescent layer;

[0043] Corresponding to the second light-emitting region, the encapsulation layer includes a second fluorescent layer;

[0044] The wavelength emitted through the first fluorescent layer is different from the wavelength emitted through the second fluorescent layer.

[0045] This embodiment achieves different colors emitted by the first and second light-emitting areas by encapsulating different fluorescent layers in the first and second light-emitting areas, thereby improving color mixing capability.

[0046] Another embodiment of this application provides a light-emitting device, including a circuit board and a plurality of light-emitting units disposed on the circuit board, wherein the light-emitting units include the light-emitting diodes provided in this application.

[0047] The light-emitting unit in the light-emitting device of this embodiment adopts the light-emitting diode provided in this application. Since the semiconductor stack of the light-emitting diode provided in this application includes a first light-emitting region and a second light-emitting region, the first light-emitting region and the second light-emitting region can be controlled independently, realizing the switching of different light-emitting regions in a single chip, achieving more precise brightness adjustment, meeting the needs of dynamic lighting and display, and compared with the parallel or series integration method of single chips in the prior art, it can reduce the capacity by 5% to 30%, which is conducive to miniaturization and integration, and improving space utilization. Since the number of chips is reduced and the connection process is simplified, the cost can be effectively reduced. The brightness of the first light-emitting region and the second light-emitting region are different, which can realize the dynamic switching of high and low brightness, which helps to achieve more compact and efficient lighting.

[0048] In existing technologies, the integration of light-emitting diodes typically employs a method of connecting individual chips in parallel or series, for example... Figure 1 As shown, while integrating individual LEDs 01 after packaging them can meet the lighting and display requirements to a certain extent, each additional LED 01 requires additional connection and packaging processes, which not only increases material costs but also increases the complexity and error rate of the production process. At the same time, since the space occupied by each LED 01 is fixed, the space occupied by integrating multiple LEDs 01 is relatively large, which is not conducive to miniaturization and integration.

[0049] To address the above-mentioned shortcomings, this application provides a light-emitting diode and a light-emitting device. The following embodiments will provide a detailed description. Example 1

[0050] This embodiment provides a light-emitting diode, such as Figure 2 and Figure 3As shown, the light-emitting diode includes at least a semiconductor stack 100, which includes a first semiconductor layer 110, an active layer 120, and a second semiconductor layer 130 stacked sequentially from top to bottom. The semiconductor stack 100 has a first light-emitting region 101, a second light-emitting region 102, and a spacer region 103 disposed between the first light-emitting region 101 and the second light-emitting region 102. The first light-emitting region 101 is electrically connected to a first electrode 210 and a second electrode (not shown in the figure), and the second light-emitting region 102 is electrically connected to a second electrode and a third electrode 220. That is, the first light-emitting region 101 and the second light-emitting region 102 share a second electrode, which can be either a positive electrode or a negative electrode, thereby enabling individual control of the first light-emitting region 101 and the second light-emitting region 102. The first light-emitting region 101 refers to the light-emitting area in the semiconductor stack 100 when the first electrode 210 and the second electrode are connected; the second light-emitting region 102 refers to the light-emitting area in the semiconductor stack 100 when the third electrode 220 and the second electrode are connected. The semiconductor stack 100 is configured to include two light-emitting regions, each of which can be controlled independently. This design allows the LED to adjust its luminous characteristics, such as brightness and color, under different operating conditions to meet various application requirements. Compared to the parallel or series integration of single LEDs in existing technologies, this LED can reduce capacity by 5% to 30%. This capacity reduction makes the LED suitable for miniaturized and high-density integrated electronic devices. Designing the LED's electrical connection as a multi-electrode connection reduces the impact of a single electrode failure on the overall device performance, improving reliability and stability. Simultaneously, this LED simplifies the manufacturing process, reduces material usage, and thus lowers production costs. The spacer 103 divides the first light-emitting region 101 and the second light-emitting region 102, thereby enabling independent control of both regions. The luminous brightness of the first luminous region 101 is different from that of the second luminous region 102. In this way, the light-emitting diode can achieve dynamic switching between high and low brightness to adapt to different lighting needs. Achieving high and low brightness switching in a single light-emitting diode can effectively reduce the number of light-emitting diodes used, reduce the number of external components, reduce the integrated capacity, and improve the integration of the product.

[0051] The first semiconductor layer 110 is an N-type semiconductor layer that provides electrons through N-type doping. The N-type semiconductor layer can be formed by doping the semiconductor with materials such as Si, Ge, Sn, Se, and Te. The second semiconductor layer 130 is a P-type semiconductor layer that provides holes through P-type doping. The P-type semiconductor layer can be formed by doping the semiconductor with materials such as Mg, Zn, Ca, Sr, and Ba. The active layer 120 can be a single quantum well structure or a multiple quantum well (MQW) structure. The multiple quantum well structure is formed by alternating stacking of quantum well layers and quantum barrier layers. The quantum barrier layer can be a GaN layer, an AlGaN layer, or an AlGaInP layer. Optionally, the active layer 120 can include multiple quantum well structures such as GaN / AlGaN, InAlGaN / InAlGaN, InGaN / AlGaN, GaInP / AlGaInP, GaInP / AlInP, or InGaAs / AlInGaAs. To improve the luminescence efficiency of the active layer 120, this can be achieved by changing the depth of the quantum wells, the number of pairs of quantum wells and the quantum well barrier layers, the thickness, and / or other characteristics in the active layer 120.

[0052] In optional embodiments, such as Figure 3 As shown, corresponding to the first light-emitting region 101, a conductive layer 200, a first insulating layer 300, and a reflective layer 400 are stacked sequentially from top to bottom on the surface of the second semiconductor layer 130 away from the surface of the active layer 120 (the lower surface of the second semiconductor layer 130). The first insulating layer 300 has at least one through-hole 310 penetrating it. A reflective layer 400 is stacked on the surface of the first insulating layer 300 away from the surface of the conductive layer 200 (the lower surface of the first insulating layer 300), and the through-hole 310 is filled with the reflective layer 400. Thus, the reflective layer 400 is electrically connected to the conductive layer 200. Corresponding to the second light-emitting region 102, a conductive layer 200 and a reflective layer 400 are stacked sequentially from top to bottom on the surface of the second semiconductor layer 130 away from the surface of the active layer 120 (the lower surface of the second semiconductor layer 130). By providing a first insulating layer 300 with a through-hole 310 between the conductive layer 200 and the reflective layer 400 in the first light-emitting region 101, the first insulating layer 300 and the reflective layer 400 form an ODR reflective structure, which can improve the reflectivity of light in the first light-emitting region 101, increase the luminous brightness of the first light-emitting region 101, and realize the difference between the luminous brightness of the first light-emitting region 101 and the luminous brightness of the second light-emitting region 102; while reducing the integrated capacity of the light-emitting diode, the switching between high and low brightness of the light-emitting diode can be realized at the same time.

[0053] The conductive layer 200 can serve as the ohmic contact layer of the second semiconductor layer 130, which is beneficial for the input and output of current in the semiconductor stack 100, and also contributes to the good electrical performance of the light-emitting diode. In addition, the conductive layer 200 also has a current spreading function, spreading the current on the side of the second semiconductor layer 130 away from the active layer 120 (the lower surface of the second semiconductor layer 130), which is beneficial to the good electrical performance of the light-emitting diode. The conductive layer 200 can be an oxide material with high transparency, high conductivity, and low contact resistance, such as indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), zinc oxide (ZnO), cadmium tin oxide (CTO), indium oxide (InO), indium (In)-doped zinc oxide (ZnO), aluminum (Al)-doped zinc oxide (ZnO), gallium (Ga)-doped zinc oxide (ZnO), or any combination thereof. Using the above materials can enhance the current spreading effect of the conductive layer 200. It is understood that the material of the conductive layer 200 is not limited to these, and can also be other materials that are beneficial for current spreading.

[0054] The material of the first insulating layer 300 can be a transparent insulating material, such as SiO2, SiN, or SiO2. x N y The first insulating layer 300 can be one of the following: TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO2, TaO2, or MgF2, or a Bragg reflector (DBR) formed by repeatedly stacking two or more of the aforementioned materials. The first insulating layer 300 can be an insulating reflective layer used to reflect light and block different electrodes in the first light-emitting region 101, thereby giving the first light-emitting region 101 better light extraction efficiency. The first insulating layer 300 can also be a multilayer film structure formed by alternating stacks of dielectric films with different high refractive indices and dielectric films with different low refractive indices. For example, the materials of the high refractive index dielectric films can be TiO2, NB2O5, TA2O5, HfO2, ZrO2, etc.; and the materials of the low refractive index dielectric films can be, for example, SiO2, MgF2, Al2O5, SiON, etc.

[0055] The reflective layer 400 may be formed of at least one metal selected from Ag, Al, Ni, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. The reflective layer 400 reflects light radiated from the semiconductor stack 100 toward the reflective layer 400 side back to the semiconductor stack 100 and radiates outward from the light-emitting side of the semiconductor stack 100. The reflective layer 400 of the first light-emitting region 101 covers the side of the conductive layer 200, and the reflective layer 400 of the second light-emitting region 102 covers the side of the conductive layer 200.

[0056] In optional embodiments, such as Figure 3As shown, the width T of the spacing region 103 is between 1µm and 100µm. Specifically, the width T of the spacing region 103 can be, for example, 1µm, 10µm, 20µm, 30µm, 40µm, 50µm, 60µm, 70µm, 80µm, 90µm, or 100µm. By limiting the width of the spacing region 103, the capacitance of the light-emitting diode can be reduced by 5% to 30%.

[0057] In optional embodiments, such as Figure 3 As shown, corresponding to the first light-emitting region 101 and the second light-emitting region 102, the second insulating layer 600 and the metal layer 700 are sequentially stacked from top to bottom on the surface of the reflective layer 400 away from the semiconductor stack 100 (the lower surface of the reflective layer 400). The material of the second insulating layer 600 can be, for example, SiO2, SiN, or SiO2. x N y The material is selected from TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO2, TaO2, or MgF2, or is a Bragg reflector (DBR) formed by repeatedly stacking two or more of the aforementioned materials. The metal layer 700 has two metal layers: one is an N-electrode layer, which can be made of materials such as Al, Ag, Cr, Pt, or TiW; the other is a bonding layer that adheres one side of the semiconductor stack 100 to the substrate 800. The bonding layer is typically made of metals such as gold, tin, titanium, nickel, or platinum, and can be a combination of multiple materials.

[0058] In optional embodiments, such as Figure 3 As shown, the spacer region 103 includes a groove (not labeled in the figure) that penetrates the second semiconductor layer 130, the active layer 120, and a portion of the first semiconductor layer 110. A second insulating layer 600 and a metal layer 700 are sequentially disposed on the sidewalls of the groove from the outside to the inside. The remaining space after the second insulating layer 600 is disposed on the sidewalls of the groove is entirely filled with the metal layer 700 to achieve electrical connection between the metal layer 700 and the first semiconductor layer 110. Thus, the first light-emitting region 101 and the second light-emitting region 102 share a single electrode. The polarity of the electrode is determined by the material of the metal layer 700, for example, an N-electrode.

[0059] In optional embodiments, such as Figure 3As shown, an electrical connection layer 500 is disposed between the reflective layer 400 and the second insulating layer 600, corresponding to the first light-emitting region 101 and the second light-emitting region 102. The electrical connection layer 500 is used to expand the current, making the current distribution more uniform, reducing the operating voltage of the light-emitting diode, and improving the light emission effect of the light-emitting diode. The electrical connection layer 500 can be made of a metal material or a transparent conductive material. The metal material can be, for example, Au, Zn, Be, Ti, Pt or alloys of the aforementioned materials, and the transparent conductive material can be, for example, ITO, IZO, InO, SnO, CTO, ATO, AZO, ZTO, GZO, IWO, or ZnO, etc.

[0060] In optional embodiments, such as Figure 3 As shown, a substrate 800 is disposed on the surface of the metal layer 700 facing away from the second insulating layer 600. The substrate 800 includes a first region and a second region surrounding the first region. Corresponding to the first region, a semiconductor stack 100 is disposed above the substrate 800. The substrate 800 provides mechanical support for the light-emitting diode. The substrate 800 is a conductive substrate, and the material of the conductive substrate can be, for example, silicon, silicon carbide, or a metal. The metal can be, for example, copper, tungsten, molybdenum, or an alloy of the aforementioned metal materials.

[0061] In optional embodiments, such as Figure 3 As shown, the electrical connection layer 500, the second insulating layer 600, and the metal layer 700 all extend from the first region to the second region. The electrical connection layer 500, which is not covered by the semiconductor stack 100, has a first electrode 210 and a third electrode 220 disposed on its surface away from the second insulating layer 600 (the upper surface of the electrical connection layer 500). The first electrode 210 is electrically connected to the first light-emitting region 101, and the third electrode 220 is electrically connected to the second light-emitting region 102, enabling individual control of the first light-emitting region 101 and the second light-emitting region 102. The first electrode 210 and the third electrode 220 are electrodes of the same polarity. The first electrode 210 and the third electrode 220 can be P electrodes, and the material of the P electrode can be, for example, Ti, Pt, Ni, Au, Sn, etc. A passivation protection layer 230 (not fully shown in the figure) is provided on the side of the first electrode 210, the side of the third electrode 220, the surface of the electrical connection layer 500 located between the semiconductor stack 100 and the first electrode 210, the surface of the electrical connection layer 500 located between the semiconductor stack 100 and the third electrode 220, and the surface of the electrical connection layer 500 located around the first electrode 210 and the third electrode 220. The passivation protection layer 230 provides insulation protection for the light-emitting diode.

[0062] In optional embodiments, such as Figure 4 and Figure 5As shown, corresponding to the first light-emitting area 101, at least one first conductive hole 710 is provided in the semiconductor stack 100. The first conductive hole 710 penetrates the second semiconductor layer 130, the active layer 120 and part of the first semiconductor layer 110. The inner sidewall of the first conductive hole 710 is provided with a second insulating layer 600 and a metal layer 700 from the outside to the inside. The remaining space after the second insulating layer 600 is provided on the inner sidewall of the first conductive hole 710 is filled with the metal layer 700. The metal layer 700 passes through the first conductive hole 710 and is electrically connected to the first semiconductor layer 110.

[0063] In optional embodiments, such as Figure 6 and Figure 7 As shown, corresponding to the second light-emitting region, at least one second conductive hole 720 is provided in the semiconductor stack 100. The second conductive hole 720 penetrates the second semiconductor layer 130, the active layer 120 and part of the first semiconductor layer 110. The inner sidewall of the second conductive hole 720 is provided with a second insulating layer 600 and a metal layer 700 from the outside to the inside. The remaining space after the second insulating layer 600 is provided in the inner sidewall of the second conductive hole 720 is filled with the metal layer 700. The metal layer 700 passes through the second conductive hole 720 and is electrically connected to the first semiconductor layer 110.

[0064] In optional embodiments, such as Figure 3 , Figure 5 and Figure 7 As shown, the surface of the first semiconductor layer 110 away from the active layer 120 is a rough surface, which is beneficial to the light emission effect of the light-emitting diode. Example 2

[0065] This embodiment also provides a light-emitting diode, such as... Figure 8 As shown, the light-emitting diode in this embodiment also includes a semiconductor stack 100. The semiconductor stack 100 has a first light-emitting region 101, a second light-emitting region 102, and a spacer region 103 disposed between the first light-emitting region 101 and the second light-emitting region 102. The first light-emitting region 101 is electrically connected to the first electrode 210 and the second electrode, and the second light-emitting region 102 is electrically connected to the second electrode and the third electrode 220. The light-emitting brightness of the first light-emitting region 101 and the second light-emitting region 102 is different. The difference from Embodiment 1 is that:

[0066] like Figure 8 As shown, an encapsulation layer 900 is disposed on the surface of the first semiconductor layer 110 away from the active layer 120 (the upper surface of the first semiconductor layer 110). The encapsulation layer 900 protects the light-emitting diode, while the light from the semiconductor stack 100 is transmitted through the encapsulation layer 900.

[0067] Corresponding to the first light-emitting area 101, the encapsulation layer 900 includes a first fluorescent layer 910; corresponding to the second light-emitting area 102, the encapsulation layer 900 includes a second fluorescent layer 920; the materials of the first fluorescent layer 910 and the second fluorescent layer 920 can be silicone. By setting the wavelength emitted by the first fluorescent layer 910 to be different from the wavelength emitted by the second fluorescent layer 920, the first light-emitting area 101 and the second light-emitting area 102 can emit different colors, thereby improving the color mixing ability. For example, the light from the first light-emitting area 101 emits green light through the first fluorescent layer 910, and the light from the second light-emitting area 102 emits blue light through the second fluorescent layer 920. By connecting red light in series or parallel, RGB switching can be achieved. Example 3

[0068] This embodiment provides a light-emitting device, such as... Figure 9 As shown, it includes a circuit board 10 and a plurality of light-emitting units 20 disposed on the circuit board 10. The light-emitting units 20 include light-emitting diodes provided in Embodiment 1 or Embodiment 2. The semiconductor stack 100 of the light-emitting diode in Embodiment 1 or Embodiment 2 has a first light-emitting region 101, a second light-emitting region 102, and a spacer region 103 disposed between the first light-emitting region 101 and the second light-emitting region 102. A second electrode electrically connected to the first light-emitting region 101 is also electrically connected to the second light-emitting region 102. The first electrode 210 electrically connected to the first light-emitting region 101 and the third electrode 220 electrically connected to the second light-emitting region 102 are different, thereby realizing individual control of the first light-emitting region 101 and the second light-emitting region 102. A single light-emitting diode contains two individually controlled light-emitting regions, which allows the light-emitting diode to adjust its luminous characteristics, such as brightness and color, under different operating conditions to meet different application requirements. At the same time, since a single light-emitting diode contains two individually controlled light-emitting regions, the capacity can be reduced by 5% to 30%, which is more conducive to the integration and miniaturization of the light-emitting device. The light-emitting brightness of the first light-emitting region 101 and the second light-emitting region 102 are different, and dynamic switching between high and low brightness can be realized in a single light-emitting diode.

[0069] The aforementioned light-emitting device can be used for vehicle lighting, stage lighting, etc., and can reduce the capacity of the light-emitting device while meeting the requirements of switching between high and low brightness and RGB switching.

[0070] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A light-emitting diode, characterized in that, It includes at least a semiconductor stack, wherein the semiconductor stack comprises a first semiconductor layer, an active layer and a second semiconductor layer stacked sequentially; The semiconductor stack has a first light-emitting region, a second light-emitting region, and a spacer region disposed between the first light-emitting region and the second light-emitting region. The first light-emitting region is electrically connected to a first electrode and a second electrode, and the second light-emitting region is electrically connected to a second electrode and a third electrode. The light-emitting brightness of the first light-emitting region and the second light-emitting region is different. Corresponding to the first light-emitting area, a conductive layer, a first insulating layer, and a reflective layer are sequentially stacked on the surface of the second semiconductor layer away from the active layer. The first insulating layer has at least one through-hole. The reflective layer is stacked on the surface of the first insulating layer away from the conductive layer and disposed in the through-hole. The reflective layer is electrically connected to the conductive layer. Corresponding to the second light-emitting region, the conductive layer and the reflective layer are sequentially stacked on the surface of the second semiconductor layer opposite to the active layer; An electrical connection layer is disposed below the reflective layer, and the first electrode and the third electrode are disposed on the upper surface of the electrical connection layer in an area not covered by the semiconductor stack. The second electrode is disposed below the electrical connection layer.

2. The light-emitting diode according to claim 1, characterized in that, The diameter of the through hole is between 1 μm and 100 μm, and the thickness of the first insulating layer is less than 1 μm.

3. The light-emitting diode according to claim 1, characterized in that, The width of the interval is between 1µm and 100µm.

4. The light-emitting diode according to claim 1 or 3, characterized in that, The spacer region includes a groove that extends through the second semiconductor layer, the active layer, and a portion of the first semiconductor layer.

5. The light-emitting diode according to claim 4, characterized in that, Corresponding to the first light-emitting area and the second light-emitting area, a second insulating layer and a metal layer are sequentially stacked on the surface of the reflective layer away from the semiconductor stack.

6. The light-emitting diode according to claim 5, characterized in that, The sidewall of the groove is provided with a second insulating layer, and the sidewall of the second insulating layer in the groove and the contact area between the groove and the first semiconductor layer are provided with the metal layer. The metal layer is electrically connected to the first semiconductor layer to form the second electrode.

7. The light-emitting diode according to claim 6, characterized in that, Corresponding to the first light-emitting area and the second light-emitting area, an electrical connection layer is provided between the reflective layer and the second insulating layer.

8. The light-emitting diode according to claim 7, characterized in that, A substrate is disposed on the surface of the metal layer opposite to the second insulating layer. The substrate includes a first region and a second region surrounding the first region. The semiconductor stack corresponds to the first region. The electrical connection layer, the second insulating layer, and the metal layer all extend from the first region to the second region.

9. The light-emitting diode according to claim 8, characterized in that, Corresponding to the first light-emitting region, at least one first conductive hole is provided in the semiconductor stack. The first conductive hole penetrates the second semiconductor layer, the active layer and part of the first semiconductor layer. A second insulating layer is provided on the sidewall of the first conductive hole. The metal layer is provided on the sidewall of the second insulating layer in the first conductive hole and at the contact point between the first conductive hole and the first semiconductor layer.

10. The light-emitting diode according to claim 8, characterized in that, Corresponding to the second light-emitting region, at least one second conductive hole is provided in the semiconductor stack. The second conductive hole penetrates the second semiconductor layer, the active layer and part of the first semiconductor layer. A second insulating layer is provided on the sidewall of the second conductive hole. The metal layer is provided on the sidewall of the second insulating layer in the second conductive hole and at the contact point between the second conductive hole and the first semiconductor layer.

11. The light-emitting diode according to claim 1, characterized in that, An encapsulation layer is disposed on the surface of the first semiconductor layer opposite to the active layer; Corresponding to the first light-emitting region, the encapsulation layer includes a first fluorescent layer; Corresponding to the second light-emitting region, the encapsulation layer includes a second fluorescent layer; The wavelength emitted through the first fluorescent layer is different from the wavelength emitted through the second fluorescent layer.

12. A light-emitting device, characterized in that, It includes a circuit board and a plurality of light-emitting units disposed on the circuit board, wherein the light-emitting units include light-emitting diodes as described in any one of claims 1 to 11.

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