Radio frequency power amplifier and radio frequency front end module

Abstract

This invention discloses a radio frequency power amplifier, wherein a first power amplifier circuit is connected to a first winding, and a second power amplifier circuit is connected to a second winding; a first end of a third winding is coupled to a ground end, and a second end of the third winding is coupled to a signal transmission end; the third winding includes n coils connected in series between the ground end and the signal transmission end; the first coil m1 to the nth coil m1 from the ground end form a first coil sequence; the nth coil m1 to the nth coil m1 form a second coil sequence. n A second coil sequence is formed; wherein, the number of coils coupled to the first winding in the first coil sequence is A1, the number of coils coupled to the first winding in the second coil sequence is A2, and |A1-A2|≤1; the number of coils coupled to the second winding in the first coil sequence is B1, and the number of coils coupled to the second winding in the second coil sequence is B2, and |B1-B2|≤1; thereby solving the problem of excessive overall loss of the RF power amplifier.

Description

Technical Field

[0001] This invention relates to the field of radio frequency technology, and in particular to a radio frequency power amplifier and a radio frequency front-end module. Background Technology

[0002] Radio frequency (RF) power amplifiers are widely used in communications, broadcasting, radar, industrial processing, medical instruments, and scientific research. Currently, with the development of 5G communication systems, RF power amplifiers are increasingly used in RF front-ends because they can meet the demands of higher frequencies and higher-order QAM modulation. The design specifications for RF power amplifiers typically include output power, loss, efficiency, gain, bandwidth, and linearity. In particular, loss and efficiency have always been a focus of attention. Power loss is a crucial performance indicator for measuring the operating efficiency of RF power amplifiers and plays a vital role in the entire communication system. Summary of the Invention

[0003] This invention provides an RF power amplifier and an RF front-end module to solve the problem of excessive loss in RF power amplifiers.

[0004] A radio frequency power amplifier includes: a first power amplifier circuit, a second power amplifier circuit, and a matching network; the matching network includes a first winding, a second winding, and a third winding; the first power amplifier circuit is connected to the first winding, and the second power amplifier circuit is connected to the second winding; a first end of the third winding is coupled to a ground terminal, and a second end of the third winding is coupled to a signal transmission terminal; the third winding includes n coils sequentially connected in series between the ground terminal and the signal transmission terminal. n is an even number greater than or equal to 4; wherein, one end of the first coil m1 is connected to the grounding terminal, and the nth coil... One end of the coil is connected to the signal transmission end; the first coil m1 to the second coil m2 coil Forming the first coil sequence From the first +1 coil up to the nth coil Forming the second coil sequence Wherein, the number of coils coupled to the first winding in the first coil sequence is A1, and the number of coils coupled to the first winding in the second coil sequence is A2. The number of coils coupled to the second winding in the first coil sequence is B1, and the number of coils coupled to the second winding in the second coil sequence is B2. .

[0005] Furthermore, the n coils M are disposed in at least one metal layer, and those disposed in different metal layers are divided into different coils, those disposed in different regions of the same metal layer are divided into different coils, and those disposed in different levels of the same region are divided into different coils.

[0006] Furthermore, the first winding is coupled to the odd-numbered coils in the third winding; the second winding is coupled to the even-numbered coils in the third winding.

[0007] Furthermore, the coil set M in the first winding and the third winding 11 Coupling, M 11 = Among them, the coil set M 11 The coil in an odd position is numbered 3 to become the next coil, and the coil in an even position is numbered 1 to become the next coil. The coil set M in the second winding and the third winding 21 Coupling, M 21 = Among them, the coil set M 21 The coil in an odd position is numbered 1 to become the next coil; and the coil in an even position is numbered 3 to become the next coil.

[0008] Furthermore, the coil set M in the first winding and the third winding 31 and coil set M 41 coupling, , ; The coil set M in the second winding and the third winding 51 coupling, ; Where n is a multiple of 4.

[0009] Furthermore, the coil coupled to the first winding in the first coil sequence, the coil coupled to the first winding in the second coil sequence, and the first winding form a first magnetic core region; The coil coupled to the second winding in the first coil sequence, the coil coupled to the second winding in the second coil sequence, and the second winding form the second magnetic core region.

[0010] Furthermore, the coil coupled to the first winding in the first coil sequence, the coil coupled to the first winding in the second coil sequence, and the first winding are respectively disposed in different metal layers, and the projections of the coil coupled to the first winding in the first coil sequence, the coil coupled to the first winding in the second coil sequence, and the first winding in the vertical direction at least partially overlap. The coil coupled to the second winding in the first coil sequence, the coil coupled to the second winding in the second coil sequence, and the second winding are respectively disposed in different metal layers, and the projections of the coil coupled to the second winding in the first coil sequence, the coil coupled to the second winding in the second coil sequence, and the second winding in the second winding in the vertical direction at least partially overlap.

[0011] Furthermore, in the first coil sequence, the coil coupled to the first winding is disposed in a metal layer adjacent to the vertically above or adjacent to the vertically below the metal layer where the first winding is located, and each coil is disposed in a different metal layer; in the second coil sequence, the coil coupled to the first winding is disposed in a metal layer adjacent to the vertically below or adjacent to the vertically above the metal layer where the first winding is located, and each coil is disposed in a different metal layer. In the first coil sequence, the coil coupled to the second winding is disposed in a metal layer adjacent to the vertically above or adjacent to the vertically below the metal layer where the second winding is located, and each coil is disposed in a different metal layer; in the second coil sequence, the coil coupled to the second winding is disposed in a metal layer adjacent to the vertically below or adjacent to the vertically above the metal layer where the second winding is located, and each coil is disposed in a different metal layer.

[0012] Furthermore, the first power amplifier circuit includes a first amplifying transistor, and the first power amplifier circuit also includes a second amplifying transistor; The input terminal of the first amplifying transistor is connected to the first end of the first winding, the second end of the first winding is connected to the first end of the second winding, and the input terminal of the second amplifying transistor is connected to the second end of the second winding. Alternatively, the output terminal of the first amplifying transistor is connected to the first end of the first winding, the second end of the first winding is connected to the first end of the second winding, and the output terminal of the second amplifying transistor is connected to the second end of the second winding.

[0013] Furthermore, the first power amplifier circuit includes a first amplifying transistor and a third amplifying transistor, and the first power amplifier circuit also includes a second amplifying transistor and a fourth amplifying transistor; The input terminal of the first amplifying transistor is connected to the first end of the first winding, the input terminal of the third amplifying transistor is connected to the second end of the first winding, the input terminal of the second amplifying transistor is connected to the second end of the second winding, and the input terminal of the fourth amplifying transistor is connected to the first end of the second winding. Alternatively, the output terminal of the first amplifying transistor is connected to the first end of the first winding, the output terminal of the third amplifying transistor is connected to the second end of the first winding, the output terminal of the second amplifying transistor is connected to the second end of the second winding, and the output terminal of the fourth amplifying transistor is connected to the first end of the second winding.

[0014] Furthermore, the first amplifying transistor is a BJT transistor, including a base, a collector, and an emitter. The base of the first amplifying transistor is the input terminal of the first amplifying transistor, the collector of the first amplifying transistor is the output terminal of the first amplifying transistor, and the emitter of the first amplifying transistor is grounded. The second amplifying transistor is a BJT transistor, including a base, a collector, and an emitter. The base of the second amplifying transistor is the input terminal of the second amplifying transistor, the collector of the second amplifying transistor is the output terminal of the second amplifying transistor, and the emitter of the second amplifying transistor is grounded. The third amplifying transistor is a BJT transistor, including a base, a collector, and an emitter. The base of the third amplifying transistor is the input terminal of the third amplifying transistor, the collector of the third amplifying transistor is the output terminal of the third amplifying transistor, and the emitter of the third amplifying transistor is grounded. The fourth amplifying transistor is a BJT transistor, including a base, a collector, and an emitter. The base of the fourth amplifying transistor is the input terminal of the fourth amplifying transistor, the collector of the fourth amplifying transistor is the output terminal of the fourth amplifying transistor, and the emitter of the fourth amplifying transistor is grounded. Alternatively, the first amplifying transistor is a MOS transistor, including a gate, a source, and a drain. The gate of the first amplifying transistor is the input terminal of the first amplifying transistor, the source of the first amplifying transistor is the output terminal of the first amplifying transistor, and the drain of the first amplifying transistor is grounded. The second amplifying transistor is a MOS transistor, including a gate, a source, and a drain. The gate of the second amplifying transistor is the input terminal of the second amplifying transistor, the source of the second amplifying transistor is the output terminal of the second amplifying transistor, and the drain of the second amplifying transistor is grounded. The third amplifying transistor is a MOS transistor, including a gate, a source, and a drain. The gate of the third amplifying transistor is the input terminal of the third amplifying transistor, the source of the third amplifying transistor is the output terminal of the third amplifying transistor, and the drain of the third amplifying transistor is grounded. The fourth amplifying transistor is a MOS transistor, including a gate, a source, and a drain. The gate of the fourth amplifying transistor is the input terminal of the fourth amplifying transistor, the source of the fourth amplifying transistor is the output terminal of the fourth amplifying transistor, and the drain of the fourth amplifying transistor is grounded.

[0015] A radio frequency front-end module, characterized in that it includes the radio frequency power amplifier described above.

[0016] The aforementioned radio frequency power amplifier includes a first power amplifier circuit, a second power amplifier circuit, and a matching network. The matching network includes a first winding, a second winding, and a third winding. The first power amplifier circuit is connected to the first winding, and the second power amplifier circuit is connected to the second winding. A first end of the third winding is coupled to a ground terminal, and a second end of the third winding is coupled to a signal transmission terminal. The third winding includes n coils connected in series between the ground terminal and the signal transmission terminal. n is an even number greater than or equal to 4, and i is a positive integer less than n; from the first coil m1 to the... coil Forming the first coil sequence From the first +1 coil up to the nth coil Forming the second coil sequence Wherein, the number of coils coupled to the first winding in the first coil sequence is A1, and the number of coils coupled to the first winding in the second coil sequence is A2. The number of coils coupled to the second winding in the first coil sequence is B1, and the number of coils coupled to the second winding in the second coil sequence is B2. This application compensates for the phase deviation between the first power amplifier circuit and the second power amplifier circuit by configuring the matching network. Specifically, it makes the difference between the number of coils coupled to the first winding in the first coil sequence of the matching network and the number of coils coupled to the first winding in the second coil sequence less than or equal to 1, and makes the difference between the number of coils coupled to the second winding in the first coil sequence of the matching network and the number of coils coupled to the second winding in the second coil sequence less than or equal to 1. This solves the problem of excessive overall loss of the RF power amplifier and optimizes the overall performance of the RF power amplifier. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a circuit diagram of a radio frequency power amplifier in one embodiment of the present invention; Figure 2 This is another circuit diagram of the radio frequency power amplifier in one embodiment of the present invention; Figure 3 This is another circuit diagram of the radio frequency power amplifier in one embodiment of the present invention; Figure 4 This is another circuit diagram of the radio frequency power amplifier in one embodiment of the present invention; Figure 5 This is another circuit diagram of the radio frequency power amplifier in one embodiment of the present invention; Figure 5 This is another circuit diagram of the radio frequency power amplifier in one embodiment of the present invention; Figure 6 This is another circuit diagram of the radio frequency power amplifier in one embodiment of the present invention; Figure 7 This is another circuit diagram of the radio frequency power amplifier in one embodiment of the present invention; Figure 8 This is another circuit diagram of the radio frequency power amplifier in one embodiment of the present invention; Figure 9 This is another circuit diagram of the radio frequency power amplifier in one embodiment of the present invention; Figure 10 This is another circuit diagram of the radio frequency power amplifier in one embodiment of the present invention. Figure 11 This is another circuit diagram of the radio frequency power amplifier in one embodiment of the present invention; Figure 12 This is a simulation diagram of an RF power amplifier / RF front-end module in one embodiment of the present invention; Figure 13 This is a simulation diagram of an RF power amplifier / RF front-end module in one embodiment of the present invention.

[0019] In the figure, 10 is the first power amplifier circuit; 20 is the second power amplifier circuit; 30 is the matching network; 11 is the first amplifying transistor; 12 is the third amplifying transistor; 22 is the second amplifying transistor; 21 is the fourth amplifying transistor; S11 is the first winding; S12 is the second winding; and S13 is the third winding. Detailed Implementation

[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] It should be understood that the invention can be embodied in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0022] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this invention, the first element, component, area, layer, or portion discussed below may be referred to as the second element, component, area, layer, or portion.

[0023] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0024] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. When used herein, the singular forms “a,” “an,” and “ / the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “comprising,” when used in this specification, identify the presence of features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0025] To fully understand this invention, detailed structures and steps will be presented in the following description to illustrate the technical solution proposed by this invention. Preferred embodiments of the invention are described in detail below; however, in addition to these detailed descriptions, the invention may have other embodiments.

[0026] A radio frequency power amplifier, such as Figures 1-6 As shown, an RF power amplifier includes a first power amplifier circuit 10, a second power amplifier circuit 20, and a matching network 30.

[0027] The matching network 30 includes a first winding S11, a second winding S12, and a third winding S13; the first power amplifier circuit 10 is connected to the first winding S11, and the second power amplifier circuit 20 is connected to the second winding S12; the first end of the third winding S13 is coupled to the ground end, and the second end of the third winding S13 is coupled to the signal transmission end.

[0028] Optionally, the first power amplifier circuit 10 can be a single-ended power amplifier circuit or a differential power amplifier circuit. The second power amplifier circuit 20 can be a single-ended power amplifier circuit or a differential power amplifier circuit.

[0029] As an example, refer to Figure 1 and Figure 4 As shown, the first power amplifier circuit 10 and the second power amplifier circuit 20 are single-ended power amplifier circuits. The first power amplifier circuit 10 includes a first input terminal and a first output terminal. The second power amplifier circuit 20 includes a second input terminal and a second output terminal. For example, the first input terminal of the first power amplifier circuit 10 is connected to the first end of the first winding S11, the second end of the first winding S11 is connected to the first end of the second winding S12, and the second input terminal of the second power amplifier circuit 20 is connected to the second end of the second winding S12; or, the first output terminal of the first power amplifier circuit 10 is connected to the first end of the first winding S11, the second end of the first winding S11 is connected to the first end of the second winding S12, and the second output terminal of the second power amplifier circuit 20 is connected to the second end of the second winding S12.

[0030] As another example, see Figure 2 , Figure 3 , Figure 5 , Figure 6As shown, the first power amplifier circuit 10 and the second power amplifier circuit 20 are differential power amplifier circuits. The first power amplifier circuit 10 includes a first input terminal, a second input terminal, a first output terminal, and a second output terminal. The second power amplifier circuit 20 includes a third input terminal, a fourth input terminal, a third output terminal, and a fourth output terminal. For example, the first input terminal of the first power amplifier circuit 10 is connected to the first end of the first winding S11, the second input terminal of the first power amplifier circuit 10 is connected to the second end of the first winding S11, the third input terminal of the second power amplifier circuit 20 is connected to the first end of the second winding S12, and the fourth input terminal of the second power amplifier circuit 20 is connected to the second end of the second winding S12; or, the first output terminal of the first power amplifier circuit 10 is connected to the first end of the first winding S11, the second output terminal of the first power amplifier circuit 10 is connected to the second end of the first winding S11, the third output terminal of the second power amplifier circuit 20 is connected to the first end of the second winding S12, and the fourth output terminal of the second power amplifier circuit 20 is connected to the second end of the second winding S12. Optionally, the matching network can be either an input matching network or an output matching network.

[0031] The third winding S13 includes n coils sequentially connected in series between the grounding terminal and the signal transmission terminal. n is an even number greater than or equal to 4, wherein one end of the first coil m1 is connected to the grounding terminal, and the nth coil... One end is connected to the signal transmission end. Optionally, the signal transmission end can be either a signal input end or a signal output end.

[0032] The n coils M are arranged in at least one metal layer. Coils arranged in different metal layers are classified as different coils. Coils arranged in different regions of the same metal layer are classified as different coils. Coils arranged in different levels of the same region are classified as different coils.

[0033] In at least one embodiment, the n coils connected in series between the grounding terminal and the signal transmission terminal can be divided as follows: Method 1: If n coils M are placed in the same metal layer, then coils placed in different areas are classified as different coils, and coils placed in different layers within the same area (e.g., inner layer, middle layer, outer layer, etc.) are classified as different coils. Figure 7 For example, suppose Figure 7 The third winding S13 is disposed in the same metal layer. Figure 7The third winding S13 is divided into four coils. Coils m1 and m4 are located in the same region of the same metal layer, and coils m2 and m3 are located in the same region of the same metal layer. Coils m1 and m4 are located in different regions of the same metal layer from coils m2 and m3. Coils m1 and m4 are located on different layers (coil m1 is located on the outer layer relative to coil m4), and coils m2 and m3 are located on different layers (coil m2 is located on the outer layer relative to coil m3).

[0034] Method 2: If the n coils M are not located in the same metal layer (i.e., the n coils M are located in at least two metal layers), then those located in different metal layers are classified as different coils, those located in different regions of the same metal layer are classified as different coils, and those located in different layers within the same region (e.g., inner layer, middle layer, outer layer, etc.) are classified as different coils. Figure 7 For example, suppose Figure 7 The third winding S13 is arranged in different metal layers. Figure 7 The third winding S13 is divided into four coils. Coils m1 and m4 are located in the same region within different metal layers, and coils m2 and m3 are located in the same region within different metal layers. Coils m1 and m2 are located in different regions within the same metal layer, and coils m3 and m4 are located in different regions within the same metal layer. Coils m1 and m4 are located at different levels within the same region (coil m1 is located on the outer layer relative to coil m4), and coils m2 and m3 are located at different levels within the same region (coil m2 is located on the outer layer relative to coil m3).

[0035] In this embodiment, the length of each coil, the actual size and shape of the coil being wound can be the same or different. In this embodiment, there is no limitation on the length of a coil, the actual size and shape of the coil being wound.

[0036] Understandably, in this embodiment, coils are classified as different coils for different metal layers, different regions within the same metal layer, and different layers within the same region. Therefore, a coil in this embodiment can be a coil wound to form a full turn, or a coil wound to form half a turn, one-third of a turn, or two-thirds of a turn, etc., of any length and shape. It should be noted that a full turn in this embodiment does not necessarily form a closed loop; that is, the two ends of a full turn are not connected. In a specific embodiment, the n coils included in the third winding are classified as one coil if they are wound to form a full turn. If the two ends of the third winding form a coil that is not a full turn during the winding process (e.g., a coil wound to form half a turn, one-third of a turn, or two-thirds of a turn, etc., of any length and shape), it is also considered a coil. Coils are classified as different coils as long as they are located in different metal layers, different regions within the same metal layer, or different layers within the same region.

[0037] As an example, see below Figure 9 As shown, if the ratio of the number of turns of the coil coupled to the first winding in the third winding to the number of turns of the first winding is 2.5:1, then the number of coils coupled to the first winding in the third winding can be divided into 3, that is, including 2 coils wound into one loop (1+1) (e.g. Figure 9 The coils m2 and m4 shown, and one coil (0.5) wound into a half-turn shape (as shown). Figure 9 The coil m1 shown is an example. Alternatively, the number of coils coupled to the first winding in the third winding can be divided into four: two coils wound into one turn (1+1), one coil wound into one-fifth turn (0.2), and one coil wound into three-tenths turn (0.3). Similarly, if the ratio of the number of turns of the coil coupled to the second winding in the third winding to the number of turns of the second winding is 2.5:1, then the number of coils coupled to the second winding in the third winding can be divided into three: two coils wound into a complete turn (1+1) (e.g., m1). Figure 9 The coils m3 and m5 shown, and one coil (0.5) wound into a half-turn shape (as shown). Figure 9 The coil shown is m6), or the number of coils coupled to the second winding in the third winding can also be 4, that is, including 2 coils wound into one turn (1+1), 1 coil wound into one-fifth turn (0.2), and 1 coil wound into three-tenths turn (0.3).

[0038] As an example, the third winding S13 includes n coils sequentially connected in series between the grounding terminal and the signal transmission terminal. Specifically, the first end of the first coil m1 is connected to the ground terminal, the second end of the first coil m1 is connected to the first end of the second coil m2, the second end of the second coil m2 is connected to the first end of the third coil m3, and so on, until the (n-1)th coil m... n-1 The second end is connected to the nth coil m n The first end is connected, and the nth coil m n The second end is connected to the signal transmission end.

[0039] The first coil m1 to the... coil Forming the first coil sequence From the first +1 coil up to the nth coil Forming the second coil sequence The number of coils in the first coil sequence is the same as the number of coils in the second coil sequence. Each coil in the first coil sequence is connected in series sequentially, and each coil in the second coil sequence is connected in series sequentially. The first coil sequence contains... coil The second end and the second coil sequence +1 coil The first end is connected.

[0040] Wherein, the number of coils coupled to the first winding in the first coil sequence is A1, and the number of coils coupled to the first winding in the second coil sequence is A2. .

[0041] In the first coil sequence, the number of coils coupled to the second winding is B1, and in the second coil sequence, the number of coils coupled to the second winding is B2. .

[0042] In one specific embodiment, since the coils in the first coil sequence are connected close to the ground end and the coils in the second coil sequence are connected close to the signal transmission end, if the first winding S11 is coupled to the coils in the first coil sequence and the second winding S12 is coupled to the coils in the second coil sequence according to the coupling method in the related art, it will result in excessive overall loss of the RF power amplifier.

[0043] In response to this, this application couples the first winding S11 with a portion of the coils in the first coil sequence and with a portion of the coils in the second coil sequence, and couples the second winding S12 with a portion of the coils in the first coil sequence and with a portion of the coils in the second coil sequence, thereby improving the impedance / phase imbalance between the first power amplifier circuit 10 and the second power amplifier circuit 20, and thus reducing the overall loss of the RF power amplifier.

[0044] As an example, this embodiment specifies that the number of coils coupled to the first winding in the first coil sequence is A1, and the number of coils coupled to the first winding in the second coil sequence is A2. The goal is to minimize the difference between the number of coils (A1) coupled to the first winding in the first coil sequence and the number of coils (A2) coupled to the first winding in the second coil sequence. Similarly, the goal is to ensure that the number of coils coupled to the second winding in the first coil sequence is B1 and the number of coils coupled to the second winding in the second coil sequence is B2. The goal is to minimize the difference between the number of coils B1 coupled to the second winding in the first coil sequence and the number of coils B2 coupled to the second winding in the second coil sequence.

[0045] Preferably, when the difference between the number of coils A1 coupled to the first winding in the first coil sequence and the number of coils A2 coupled to the first winding in the second coil sequence is zero, and the difference between the number of coils B1 coupled to the second winding in the first coil sequence and the number of coils B2 coupled to the second winding in the second coil sequence is zero, the impedance / phase balance between the first power amplifier circuit 10 and the second power amplifier circuit 20 is good.

[0046] For reference Figure 1As shown, the third winding S13 includes four coils. The first coil sequence includes coil m1 and coil m2, and the second coil sequence includes coil m3 and coil m4. The first winding S11 is coupled to coil m2 in the first coil sequence and to coil m4 in the second coil sequence. That is, the number of coils coupled to the first winding in the first coil sequence is 1, the number of coils coupled to the first winding in the second coil sequence is 1, and the difference between the number of coils coupled to the first winding in the first coil sequence and the number of coils coupled to the first winding in the second coil sequence is zero. Similarly, the second winding S12 is coupled to coil m1 in the first coil sequence and to coil m3 in the second coil sequence. That is, the number of coils coupled to the second winding S12 in the first coil sequence is 1, the number of coils coupled to the second winding S12 in the second coil sequence is 1, and the difference between the number of coils coupled to the second winding S12 in the first coil sequence and the number of coils coupled to the second winding S12 in the second coil sequence is zero.

[0047] For reference Figure 3 As shown, the third winding S13 includes six coils. The first coil sequence includes coils m1, m2, and m3, and the second coil sequence includes coils m4, m5, and m6. The second winding S12 is coupled to coil m2 in the first coil sequence, and to coils m4 and m6 in the second coil sequence. That is, the number of coils coupled to the second winding in the first coil sequence is 1, the number of coils coupled to the second winding in the second coil sequence is 2, and the difference between the number of coils coupled to the second winding in the first coil sequence and the number of coils coupled to the second winding in the second coil sequence is 1. Similarly, the first winding S11 is coupled to coils m1 and m3 in the first coil sequence, and the first winding S11 is coupled to coil m5 in the second coil sequence. That is, the number of coils coupled to the first winding S11 in the first coil sequence is 2, the number of coils coupled to the first winding S11 in the second coil sequence is 1, and the difference between the number of coils coupled to the first winding S11 in the first coil sequence and the number of coils coupled to the first winding S11 in the second coil sequence is 1.

[0048] For reference Figure 1As shown, the third winding S13 includes four coils, specifically coils m1, m2, m3, and m4 connected in series in sequence. Coils m1 and m2 form a first coil sequence, and coils m3 and m4 form a second coil sequence. The first winding S11 is coupled to coil m2 in the first coil sequence and to coil m4 in the second coil sequence; the second winding S12 is coupled to coil m1 in the first coil sequence and to coil m3 in the second coil sequence. This can improve the impedance / phase imbalance between the first power amplifier circuit 10 and the second power amplifier circuit 20, thereby solving the problem of excessive overall loss of the RF power amplifier and optimizing the overall performance of the RF power amplifier.

[0049] For reference Figures 7 to 11 As shown, the first winding S11 and the second winding S12 are disposed on the same metal layer. The first end and the second end of the first winding S11 are connected to the first power amplifier circuit 10, and the first end and the second end of the second winding S12 are connected to the second power amplifier circuit 20. The first end of the third winding S13 is coupled to the ground terminal, and the second end is coupled to the signal transmission terminal. The third winding S13 includes n coils.

[0050] In one specific embodiment, by Figure 7 It can be seen that the third winding S13 includes four coils, specifically coils m1, m2, m3, and m4 connected in series in sequence. Coils m1 and m2 are coils in the first coil sequence of the third winding S13. Coil m1 in the first coil sequence is coupled to the first winding S11 and is located outside the first winding S11. Coil m1 in the first coil sequence is coupled to the second winding S12 and is located outside the second winding S12. Coils m1 and m2 are located in different regions of the same metal layer. Coils m3 and m4 are coils in the second coil sequence of the third winding S13. As shown in the figure, coils m2 and m3 are located in different metal layers. Coil m2 is connected to coil m3 via a jumper. Coil m3 in the second coil sequence is coupled to the second winding S12 and is located inside the second winding S12. Coil m4 in the second coil sequence is coupled to the first winding S11 and is located inside the first winding S11. The third coil m3 and the fourth coil m4 are located in different areas of the same metal layer.

[0051] In another specific embodiment, by Figure 8It can be seen that the third winding S13 includes four coils, specifically coils m1, m2, m3, and m4 connected in series in sequence. Coils m1 and m2 are coils in the first coil sequence of the third winding S13. Coil m1 is coupled to the first winding S11 and is located inside the first winding S11. Coil m2 is coupled to the second winding S12 and is located outside the second winding S12. Coils m1 and m2 are located in different metal layers and can be connected via jumpers. Coils m3 and m4 are coils in the second coil sequence of the third winding S13. As shown in the figure, coils m2 and m3 are located in different areas of the same metal layer and can be directly connected. In the second coil sequence, coil m3 is coupled to the first winding S11 and is located outside the first winding S11. In the second coil sequence, coil m4 is coupled to the second winding S12 and is located inside the second winding S12. Coils m1 and m4 are located in different regions of the same metal layer.

[0052] In another specific embodiment, by Figure 10 It is known that the third winding S13 includes six coils, specifically coils m1, m2, m3, m4, m5, and m6 connected in series in sequence. Coils m1, m2, and m3 are coils in the first coil sequence of the third winding S13. Coils m4, m5, and m6 are coils in the second coil sequence of the third winding S13. Coil m1 in the first coil sequence is coupled to the first winding S11 and is located inside the first winding S11. Coils m4 and m5 in the second coil sequence are coupled to the first winding S11, with coil m4 located outside and inside the first winding S11. Coils m1, m4, and m5 are located in different layers within the same region. Specifically, coil m1 is located in the inner layer, coil m5 in the middle layer, and coil m4 in the outer layer. In the first coil sequence, coils m2 and m3 are coupled to the second winding S12. Coil m2 is located on the outer side of the second winding S12, and coil m3 is located on the inner side of the second winding S12. In the second coil sequence, coil m6 is coupled to the second winding S12 and is located on the inner side of the first winding S11. Coils m2, m3, and m6 are located in different layers within the same region. Specifically, coil m3 is located in the inner layer, coil m6 in the middle layer, and coil m2 in the outer layer.

[0053] In another specific embodiment, by Figure 11It is known that the third winding S13 includes eight coils, specifically coils m1, m2, m3, m4, m5, m6, m7, and m8 connected in series in sequence. Coils m1, m2, m3, and m4 are coils in the first coil sequence of the third winding S13. Coils m5, m6, m7, and m8 are coils in the second coil sequence of the third winding S13. Coils m2 and m3 in the first coil sequence are coupled to the second winding S12 and are both located inside the second winding S12. Coils m6 and m7 in the second coil sequence are coupled to the second winding S12, with coil m6 located outside the second winding S12 and coil m7 located inside the second winding S12. Coils m2, m3, m6, and m7 are located in different layers within the same region. In this sequence, coil m2 is located in the innermost layer, coil m3 in the next innermost layer, coil m7 in the middle layer, and coil m6 in the outermost layer. In the first coil sequence, coils m1 and m4 are coupled to the first winding S11, with coil m1 and m4 located inside the first winding S11. In the second coil sequence, coils m5 and m8 are coupled to the first winding S11, with coil m8 located inside the first winding S11 and coil m5 located outside the first winding S11. Coils m1, m4, m5, and m8 are located in different layers within the same region. Specifically, coil m1 is located in the innermost layer, coil m4 in the next innermost layer, coil m8 in the middle layer, and coil m5 in the outermost layer.

[0054] For reference Figure 12 and Figure 13 As shown, Figure 12 The simulation diagram is shown below, illustrating the coupling method employed using relevant technologies (i.e., coupling the first winding of the matching network to the coils in the first coil sequence, and coupling the second winding to the coils in the second coil sequence). Figure 12 As shown, the overlap between the first and second output terminals of the first power amplifier circuit and the second power amplifier circuit is small at a certain frequency point. Therefore, the balance between the first and second output terminals of the first power amplifier circuit and the second power amplifier circuit is also poor. Figure 13The simulation diagram is a simulation of the coupling method used in this embodiment (i.e., the difference between the number of coils coupled to the first winding in the first coil sequence of the matching network and the number of coils coupled to the first winding in the second coil sequence is less than or equal to 1, and the coil coupling method in which the difference between the number of coils coupled to the second winding in the first coil sequence of the matching network and the number of coils coupled to the second winding in the second coil sequence is less than or equal to 1). Figure 13 It can be seen that the first and second output terminals of the first power amplifier circuit and the second power amplifier circuit have a large degree of overlap at a certain frequency point. Therefore, the balance between the first and second output terminals of the first power amplifier circuit and the second power amplifier circuit is also good. This can improve the impedance / phase imbalance between the first power amplifier circuit 10 and the second power amplifier circuit 20, thereby solving the problem of excessive overall loss of the RF power amplifier and optimizing the overall performance of the RF power amplifier.

[0055] In this embodiment, the radio frequency power amplifier includes a first power amplifier circuit, a second power amplifier circuit, and a matching network. The matching network includes a first winding, a second winding, and a third winding. The first power amplifier circuit is connected to the first winding, and the second power amplifier circuit is connected to the second winding. A first end of the third winding is coupled to a ground terminal, and a second end of the third winding is coupled to a signal transmission terminal. The third winding includes n coils connected in series between the ground terminal and the signal transmission terminal. n is an even number greater than or equal to 4, and i is a positive integer less than n; from the first coil m1 to the... coil Forming the first coil sequence From the first +1 coil up to the nth coil Forming the second coil sequence Wherein, the number of coils coupled to the first winding in the first coil sequence is A1, and the number of coils coupled to the first winding in the second coil sequence is A2. The number of coils coupled to the second winding in the first coil sequence is B1, and the number of coils coupled to the second winding in the second coil sequence is B2. This application compensates for the phase deviation between the first power amplifier circuit and the second power amplifier circuit by configuring a matching network. Specifically, it makes the difference between the number of coils coupled to the first winding in the first coil sequence of the matching network and the number of coils coupled to the first winding in the second coil sequence less than or equal to 1, and makes the difference between the number of coils coupled to the second winding in the first coil sequence of the matching network and the number of coils coupled to the second winding in the second coil sequence less than or equal to 1. This improves the impedance / phase imbalance between the first power amplifier circuit 10 and the second power amplifier circuit 20, solves the problem of excessive overall loss of the RF power amplifier, and optimizes the overall performance of the RF power amplifier.

[0056] In one specific embodiment, reference is made to the following Figure 1 and Figure 2 As shown, the first winding S11 is coupled to the odd-numbered coils in the third winding S13. The second winding S12 is coupled to the even-numbered coils in the third winding.

[0057] As an example, the first winding 11 and the third winding S13 contain coils m1, m3, m5, ..., m6. n-1 Coupling, the second winding S12 is coupled to coils m2, m4, m6, ..., mn in the third winding S13. n coupling.

[0058] For reference Figure 8 As shown, in a specific embodiment, the third winding S13 includes four coils, specifically coils m1, m2, m3, and m4 connected in series in sequence. The first winding S11 and the odd-numbered coils in the third winding S13 (such as...) Figure 8 Coil m1 and coil m3 are coupled as shown), the second winding S12 is coupled to the even-numbered coils in the third winding S13 (e.g., Figure 8(The diagram shows coils m2 and m4 coupled). Coils m1 and m2 are coils in the first coil sequence of the third winding S13. Coil m1 is coupled to the first winding S11 and is located inside the first winding S11. Coil m2 is coupled to the second winding S12 and is located outside the second winding S12. Coils m1 and m2 are located in different metal layers and can be connected via jumpers. Similarly, coils m3 and m4 are coils in the second coil sequence of the third winding S13. As shown in the diagram, coils m2 and m3 are located in different areas of the same metal layer and can be directly connected. Coil m3 is coupled to the first winding S11 and is located outside the first winding S11. Coil m4 is coupled to the second winding S12 and is located inside the second winding S12. Coils m1 and m4 are located in different areas of the same metal layer.

[0059] In this embodiment, by coupling the first winding S11 with the odd-numbered coils in the third winding S13, and coupling the second winding S12 with the even-numbered coils in the third winding, the difference between the number of coils in the first coil sequence coupled to the second winding and the number of coils in the second coil sequence coupled to the second winding is less than or equal to 1. This improves the impedance / phase imbalance between the first power amplifier circuit 10 and the second power amplifier circuit 20, thus solving the problem of excessive overall loss in the RF power amplifier and optimizing the overall performance of the RF power amplifier.

[0060] In one specific embodiment, reference is made to the following Figures 4 to 6 As shown, the coil set M in the first winding and the third winding 11 Coupling, M 11 = Among them, the coil set M 11 The coil in an odd position is numbered 3 to become the next coil, and the coil in an even position is numbered 1 to become the next coil.

[0061] The coil set M in the second winding and the third winding 21 Coupling, M 21 = Among them, the coil set M 21 The coil in an odd position is numbered 1 to become the next coil; and the coil in an even position is numbered 3 to become the next coil.

[0062] As an example, the first winding 11 and the third winding S13 include the first coil m1, the fourth coil m4, the fifth coil m5, ..., the (N-2)th coil m n-2and the (N-1)th coil m n-1 Coupling, and so on, satisfies the set M of coils. 11 The sequence is as follows: for coils in odd positions, add 3 to their number to get the next coil; for coils in even positions, add 1 to their number to get the next coil. For example: adding 3 to the first coil m1 in an odd position gives the next coil m4, the fourth coil. Adding 1 to the second coil m2 in an even position gives the next coil m5, the fifth coil. Since the fifth coil m5 is in an odd position, its next coil is the eighth coil m8, which is 3 times its coil number. The eighth coil m8 is in an even position, so its next coil is the ninth coil m9, which is 1 time greater than its coil number. And so on.

[0063] Similarly, the second winding S12 and the third winding S13 contain the second coil m2, the third coil m3, the sixth coil m6, the seventh coil m7, ..., the (n-3)th coil m... n-3 and the nth coil m n Coupling. And so on, satisfying the coil set M. 21 To determine the next coil, simply add 1 to the coil number of the odd-numbered coil and add 3 to the coil number of the even-numbered coil. For example, adding 1 to the second coil (m2) in an odd-numbered position gives the third coil (m3). Adding 3 to the third coil (m3) in an even-numbered position gives the sixth coil (m6). Since the sixth coil (m6) is in an odd-numbered position, its next coil is the seventh coil (m7) with its coil number increased by 1. The seventh coil (m7) is in an even-numbered position, so its next coil is the tenth coil (m10) with its coil number increased by 3. 10 And so on.

[0064] For reference Figure 10 As shown, the third winding S13 includes six coils, specifically coils m1, m2, m3, m4, m5, and m6 connected in series. The coil set M in the first winding and the third winding... 11 Coupling, M 11 = Among them, the coil set M 11 The coil in an odd-numbered position is numbered 3 to become the next coil, and the coil in an even-numbered position is numbered 1 to become the next coil. That is, the first winding S11 is coupled to coils m1, m4, and m5 in the third winding. The second winding and the set of coils in the third winding M... 21 Coupling, M 21 = Among them, the coil set M 21The coil in an odd-numbered position is incremented by 1 to become the next coil; the coil in an even-numbered position is incremented by 3 to become the next coil. That is, the second winding S12 is coupled to coils m2, m3, and m6 in the third winding. Coil m1 in the first coil sequence is coupled to the first winding S11 and is located inside the first winding S11. Coils m4 and m5 in the second coil sequence are coupled to the first winding S11, with coil m4 located outside and inside the first winding S11. Coils m1, m4, and m5 are located in different layers within the same region. Specifically, coil m1 is located in the inner layer, coil m5 in the middle layer, and coil m4 in the outer layer. In the first coil sequence, coils m2 and m3 are coupled to the second winding S12. Coil m2 is located on the outer side of the second winding S12, and coil m3 is located on the inner side of the second winding S12. In the second coil sequence, coil m6 is coupled to the second winding S12 and is located on the inner side of the first winding S11. Coils m2, m3, and m6 are located in different layers within the same region. Specifically, coil m3 is located in the inner layer, coil m6 in the middle layer, and coil m2 in the outer layer.

[0065] In this embodiment, by making the coil set M in the first winding S11 and the third winding S13... 11 Coupling, M 11 = Among them, the coil set M 11 The coil in an odd-numbered position is incremented by 3 to become the next coil, and the coil in an even-numbered position is incremented by 1 to become the next coil; and the coil set M in the second winding S12 and the third winding S13. 21 Coupling, M 21 = Among them, the coil set M 21 The coil number in the odd-numbered position is incremented by 1 to become the next coil; and the coil number in the even-numbered position is incremented by 3 to become the next coil. This ensures that the difference between the number of coils coupled to the second winding in the first coil sequence and the number of coils coupled to the second winding in the second coil sequence is less than or equal to 1. This can improve the impedance / phase imbalance between the first power amplifier circuit 10 and the second power amplifier circuit 20, thereby solving the problem of excessive overall loss of the RF power amplifier and optimizing the overall performance of the RF power amplifier.

[0066] In one specific embodiment, reference is made to the following Figures 1 to 3 As shown, the first winding is coupled to coil sets M31 and M41 in the third winding. , .

[0067] The second winding is coupled to coil set M51 in the third winding. Where n is a multiple of 4.

[0068] As an example, when the number of coils n in the third winding S13 is a multiple of 4, the set M of coils in the first winding S11 and the third winding S13 is... 31 and coil set M 41 coupling, , The coil set M in the second winding S12 and the third winding S13 51 coupling, That is, the first coil m1 to the n / 4th coil m in the first winding S11 and the third winding S13. n / 4 Coupling, and the (3n / 4)+1th coil m in the first winding S11 and the third winding S13 (3n / 4)+1 up to the nth coil m N Coupling; the second winding S12 is coupled to the (n / 4)+1th coil m in the third winding. （n / 4）+1 up to the 3n / 4th coil m 3n / 4 coupling.

[0069] As an example, see below Figure 7 As illustrated in this example, the third winding S13 includes four coils. Specifically, the coil set M in the first winding and the third winding... 31 and coil set M 41 Coupling, where the coil set M 31 Includes coil m1, coil set M 41 Including coil m 4， The first winding is coupled to coils m1 and m4, with coil m1 positioned outside the first winding S11 and coil m4 positioned inside the first winding S11. The second winding and the coil set M in the third winding... 51 Coupling, where the coil set M 51 It includes coil m2 and coil m3, and the second winding is coupled to coil m2 and coil m3. Coil m2 is disposed on the outside of the second winding S12, and coil m3 is disposed on the inside of the second winding S12.

[0070] In this embodiment, by making the coil set M in the first winding and the third winding 31 and coil set M 41 coupling, , The coil set M in the second winding and the third winding 51 coupling, Where n is a multiple of 4; thereby ensuring that the difference between the number of coils coupled to the second winding in the first coil sequence and the number of coils coupled to the second winding in the second coil sequence is less than or equal to 1, thereby improving the impedance / phase imbalance between the first power amplifier circuit 10 and the second power amplifier circuit 20, solving the problem of excessive overall loss of the RF power amplifier, and thus optimizing the overall performance of the RF power amplifier.

[0071] In one specific embodiment, reference is made to the following Figures 7 to 11 As shown, the coil coupled to the first winding in the first coil sequence and the coil coupled to the first winding in the second coil sequence together form a first magnetic core region with the first winding; the coil coupled to the second winding in the first coil sequence and the coil coupled to the second winding in the second coil sequence together form a second magnetic core region with the second winding.

[0072] The first winding S11, the second winding S12, and the third winding S13 are independently configured windings on the matching network 30. As an example, the first winding S11 and the second winding S12 can be connected to the input terminals of the first power amplifier circuit 10 and the second power amplifier circuit 20, respectively, or they can be connected to the output terminals of the first power amplifier circuit 10 and the second power amplifier circuit 20. The signal transmission terminal of the third winding S13 can be either a signal input terminal or a signal output terminal.

[0073] Alternatively, refer to the following Figure 7 As shown, the third winding 13 can be disposed on the same metal layer as the first winding 11 and the second winding 12. That is, the coil coupled to the first winding in the first coil sequence (e.g., coil m1), the coil coupled to the first winding in the second coil sequence (e.g., coil m4), and the first winding form a first magnetic core region on the same metal layer, and the coil coupled to the second winding in the first coil sequence (e.g., coil m2), the coil coupled to the second winding in the second coil sequence (e.g., coil m3), and the second winding form a second magnetic core region on the same metal layer.

[0074] Alternatively, the third winding 13 can be disposed on different metal layers as the first winding 11 and the second winding 12. That is, the coil coupled to the first winding in the first coil sequence (e.g., coil m1), the coil coupled to the first winding in the second coil sequence (e.g., coil m4), and the first winding form a first magnetic core region on different metal layers; and the coil coupled to the second winding in the first coil sequence (e.g., coil m2), the coil coupled to the second winding in the second coil sequence (e.g., coil m3), and the second winding form a second magnetic core region on different metal layers. For example, the first winding 11 is disposed on the second metal layer, the coil coupled to the first winding in the first coil sequence (e.g., coil m1) is disposed on the first metal layer, and the coil coupled to the first winding in the second coil sequence (e.g., coil m4) is disposed on the third metal layer, thereby achieving upper and lower layer coupling between the first winding 11 and the coils in the first and second coil sequences to form the first magnetic core region. The first coupling region can be understood as the coupling region corresponding to the parallel-plate capacitor formed between the first winding 11 and the coils in the first coil sequence and the second coil sequence. Similarly, the second winding 12 is disposed in the second metal layer, the coil coupled to the second winding in the first coil sequence (e.g., coil m2) is disposed in the first metal layer, and the coil coupled to the second winding in the second coil sequence (e.g., coil m3) is disposed in the third metal layer, thereby realizing the upper and lower layer coupling between the second winding 12 and the coils in the first coil sequence and the second coil sequence to form the second magnetic core region. The second coupling region can be understood as the coupling region corresponding to the parallel-plate capacitor formed between the second winding 12 and the coils in the first coil sequence and the second coil sequence.

[0075] In this embodiment, the third winding 13 is arranged in layers with the first winding 11 and the second winding 12. By adjusting the positions of the first winding 11, the second winding 12 and the third winding 13, the matching network 30 forms a first coupling region and a second coupling region. This not only greatly improves the coupling coefficient of the matching network 30 and ensures the balance of the matching network 30, but also reduces losses while ensuring a small area, thereby improving the bandwidth, linearity and efficiency of the circuit in which the matching network 30 is located.

[0076] In one specific embodiment, reference is made to the following Figure 7 As shown, the coil coupled to the first winding in the first coil sequence and the coil coupled to the second winding in the first coil sequence are disposed in the same metal layer; the coil coupled to the first winding in the second coil sequence and the coil coupled to the second winding in the second coil sequence are disposed in the same metal layer.

[0077] Specifically, coils m1 and m2 are coils in the first coil sequence of the third winding S13. Coil m1 in the first coil sequence is coupled to the first winding S11 and is located outside the first winding S11. Coil m2 in the first coil sequence is coupled to the second winding S12 and is located outside the second winding S12. Coil m1 and coil m2 are disposed in the same metal layer. Coils m3 and m4 are coils in the second coil sequence of the third winding S13. As shown in the figure, coil m2 is connected to coil m3 via a jumper. Coil m3 in the second coil sequence is coupled to the second winding S12 and is located inside the first winding S11. Coil m4 in the second coil sequence is coupled to the first winding S11 and is located inside the first winding S11. Coils m3 and m4 are disposed in the same metal layer.

[0078] In one specific embodiment, reference is made to the following Figure 8 As shown, the coil coupled to the first winding in the first coil sequence and the coil coupled to the second winding in the first coil sequence are disposed in different metal layers; the coil coupled to the first winding in the second coil sequence and the coil coupled to the second winding in the second coil sequence are disposed in different metal layers. Furthermore, the coil coupled to the first winding in the first coil sequence and the coil coupled to the second winding in the second coil sequence are disposed in the same metal layer, and the coil coupled to the second winding in the first coil sequence and the coil coupled to the first winding in the second coil sequence are disposed in the same metal layer.

[0079] Specifically, coils m1 and m2 are coils in the first coil sequence of the third winding S13. Coil m1 is coupled to the first winding S11 and is located inside the first winding S11. Coil m2 is coupled to the second winding S12 and is located outside the second winding S12. Coils m1 and m2 are located in different metal layers and can be connected via jumpers. Coils m3 and m4 are coils in the second coil sequence of the third winding S13. As shown in the figure, coils m2 and m3 are located in the same metal layer and can be directly connected. Coil m3 is coupled to the first winding S11 and is located outside the first winding S11. Coil m4 is coupled to the second winding S12 and is located inside the second winding S12.

[0080] In one specific embodiment, the coil coupled to the first winding in the first coil sequence and the coil coupled to the first winding in the second coil sequence are respectively disposed in different metal layers, and the projections of the coil coupled to the first winding in the first coil sequence and the coil coupled to the first winding in the second coil sequence with the first winding in the vertical direction at least partially overlap. For example, the coil coupled to the first winding in the first coil sequence is disposed in the first metal layer, the coil coupled to the first winding in the second coil sequence is disposed in the third metal layer, the first winding S11 is disposed in the second metal layer, and the projection of the coil coupled to the first winding in the second coil sequence with the first winding S11 in the vertical direction at least partially overlaps, thereby realizing the upper and lower layer coupling between the first winding S11 and the coils in the first coil sequence and the second coil sequence to form a first magnetic core region.

[0081] In the first coil sequence, the coil coupled to the second winding, and in the second coil sequence, the coil coupled to the second winding are respectively disposed in different metal layers, and the projections of the coil coupled to the first winding in the first coil sequence and the first winding in the second coil sequence in the vertical direction at least partially overlap. For example, the coil coupled to the second winding in the first coil sequence is disposed in the first metal layer, the coil coupled to the second winding in the second coil sequence is disposed in the third metal layer, and the second winding S12 is disposed in the second metal layer, and the projections of the coil coupled to the second winding in the second coil sequence and the second winding S12 in the vertical direction at least partially overlap, thereby achieving upper and lower layer coupling between the second winding S12 and the coils in the first coil sequence and the second coil sequence to form a second magnetic core region.

[0082] In one specific embodiment, the coil coupled to the first winding in the first coil sequence is disposed in a metal layer adjacent to the vertically above or adjacent to the vertically below the metal layer where the first winding is located, and each coil is disposed in a different metal layer; the coil coupled to the first winding in the second coil sequence is disposed in a metal layer adjacent to the vertically below or adjacent to the vertically above the metal layer where the first winding is located, and each coil is disposed in a different metal layer.

[0083] As an example, the first winding is disposed in the Z-th metal layer, and each coil in the first coil sequence coupled to the first winding is disposed in the Z-1 to Z-th metal layers respectively. Metal layers, wherein each coil in the second coil sequence coupled to the first winding is respectively disposed in the Z+1th metal layer to the Z+th metal layer. Metal layer; or, the first winding is disposed in the Zth metal layer, and each coil in the first coil sequence coupled to the first winding is disposed in the Z+1th to Z-th metal layers respectively. Metal layers, wherein each coil in the second coil sequence coupled to the first winding is respectively disposed in the Z-1 to Z-th metal layers. Layers. Understandably, in this embodiment, each coil in the first coil sequence coupled to the first winding, each coil in the second coil sequence coupled to the first winding, and the first winding are respectively disposed in different metal layers.

[0084] In the first coil sequence, the coil coupled to the second winding is disposed in a metal layer adjacent to the vertically above or adjacent to the vertically below the metal layer where the second winding is located, and each coil is disposed in a different metal layer; in the second coil sequence, the coil coupled to the second winding is disposed in a metal layer adjacent to the vertically below or adjacent to the vertically above the metal layer where the second winding is located, and each coil is disposed in a different metal layer.

[0085] As an example, the second winding is disposed in the Z-th metal layer, and each coil in the first coil sequence coupled to the second winding is disposed in the Z-1 to Z-th metal layers respectively. Metal layers, wherein each coil in the second coil sequence coupled to the second winding is respectively disposed in the Z+1th metal layer to the Z+th metal layer. Metal layer; or, the second winding is disposed in the Zth metal layer, and each coil in the first coil sequence coupled to the second winding is disposed in the Z+1th to Z-th metal layers respectively. Metal layers, wherein each coil in the second coil sequence coupled to the second winding is respectively disposed in the Z-1th metal layer to the Z-th metal layer. Layers. Understandably, in this embodiment, each coil in the first coil sequence coupled to the second winding, each coil in the second coil sequence coupled to the second winding, and the second winding are respectively disposed in different metal layers.

[0086] In one specific embodiment, the first power amplifier circuit includes a first amplifying transistor 11 and a second amplifying transistor 22.

[0087] The input terminal of the first amplifying transistor 11 is connected to the first end of the first winding, the second end of the first winding is connected to the first end of the second winding, and the input terminal of the second amplifying transistor 22 is connected to the second end of the second winding. Alternatively, the output terminal of the first amplifying transistor 11 is connected to the first end of the first winding, the second end of the first winding is connected to the first end of the second winding, and the output terminal of the second amplifying transistor 22 is connected to the second end of the second winding. In this embodiment, the first amplifying transistor 11 and the second amplifying transistor 22 form a differential amplifier circuit.

[0088] In this embodiment, both the first power amplifier circuit and the second power amplifier circuit are single-ended amplifier circuits. If the matching network 30 is an input matching network, the input terminal of the first amplifying transistor 11 is connected to the first end of the first winding, the second end of the first winding is connected to the first end of the second winding, and the input terminal of the second amplifying transistor 22 is connected to the second end of the second winding. The matching network 30 inputs the converted and synthesized radio frequency signals to the first and second amplifying transistors respectively for amplification. If the matching network 30 is an output matching network, the output terminal of the first amplifying transistor 11 is connected to the first end of the first winding, the second end of the first winding is connected to the first end of the second winding, and the output terminal of the second amplifying transistor 22 is connected to the second end of the second winding. The matching network 30 converts and synthesizes the radio frequency amplified signals after amplification by the first amplifying transistor 11 and the second amplifying transistor 22 and outputs them. The phase of the first radio frequency amplified signal output by the first amplifying transistor 11 is 180 degrees out of phase with the phase of the second radio frequency amplified signal output by the second amplifying transistor 22.

[0089] In one specific embodiment, the first power amplifier circuit includes a first amplifying transistor 11 and a third amplifying transistor 12, and also includes a second amplifying transistor 22 and a fourth amplifying transistor 21. The input terminal of the first amplifying transistor 11 is connected to a first end of the first winding, the input terminal of the third amplifying transistor 12 is connected to a second end of the first winding, the input terminal of the second amplifying transistor 22 is connected to a second end of the second winding, and the input terminal of the fourth amplifying transistor 21 is connected to a first end of the second winding; or, the output terminal of the first amplifying transistor 11 is connected to a first end of the first winding, the output terminal of the third amplifying transistor 12 is connected to a second end of the first winding, the output terminal of the second amplifying transistor 22 is connected to a second end of the second winding, and the output terminal of the fourth amplifying transistor 21 is connected to a first end of the second winding.

[0090] In this embodiment, both the first power amplifier circuit and the second power amplifier circuit are differential amplifier circuits. If the matching network 30 is an input matching network, the input terminal of the first amplifying transistor 11 is connected to the first end of the first winding, the input terminal of the third amplifying transistor 12 is connected to the second end of the first winding, the input terminal of the second amplifying transistor 22 is connected to the second end of the second winding, and the input terminal of the fourth amplifying transistor 21 is connected to the first end of the second winding. If the matching network 30 is an output matching network, the output terminal of the first amplifying transistor 11 is connected to the first end of the first winding, the output terminal of the third amplifying transistor 12 is connected to the second end of the first winding, the output terminal of the second amplifying transistor 22 is connected to the second end of the second winding, and the output terminal of the fourth amplifying transistor 21 is connected to the first end of the second winding.

[0091] In one specific embodiment, the first amplifying transistor is a BJT (Browser-Jet Transistor) including a base, collector, and emitter. The base of the first amplifying transistor is its input terminal, the collector is its output terminal, and the emitter is grounded. The second amplifying transistor is a BJT, including a base, collector, and emitter. The base of the second amplifying transistor is its input terminal, the collector is its output terminal, and the emitter is grounded. The third amplifying transistor is a BJT, including a base, collector, and emitter. The base of the third amplifying transistor is its input terminal, the collector is its output terminal, and the emitter is grounded. The fourth amplifying transistor is a BJT, including a base, collector, and emitter. The base of the fourth amplifying transistor is its input terminal, the collector is its output terminal, and the emitter is grounded.

[0092] In another specific embodiment, the first amplifying transistor is a MOS transistor, including a gate, a source, and a drain. The gate of the first amplifying transistor is its input terminal, the source is its output terminal, and the drain is grounded. The second amplifying transistor is a MOS transistor, including a gate, a source, and a drain. The gate of the second amplifying transistor is its input terminal, the source is its output terminal, and the drain is grounded. The third amplifying transistor is a MOS transistor, including a gate, a source, and a drain. The gate of the third amplifying transistor is its input terminal, the source is its output terminal, and the drain is grounded. The fourth amplifying transistor is a MOS transistor, including a gate, a source, and a drain. The gate of the fourth amplifying transistor is its input terminal, the source is its output terminal, and the drain is grounded.

[0093] This application also provides a radio frequency front-end module, including the radio frequency power amplifier described in the above embodiments.

[0094] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. A radio frequency power amplifier, characterized in that, include: First power amplifier circuit, second power amplifier circuit and matching network; The matching network includes a first winding, a second winding, and a third winding; The first power amplifier circuit is connected to the first winding, and the second power amplifier circuit is connected to the second winding; The first end of the third winding is coupled to the ground end, and the second end of the third winding is coupled to the signal transmission end; The third winding includes n coils sequentially connected in series between the grounding terminal and the signal transmission terminal. n is an even number greater than or equal to 4; wherein, one end of the first coil m1 is connected to the grounding terminal, and the nth coil... One end is connected to the signal transmission end; The first coil m1 to the... coil Forming the first coil sequence From the first +1 coil up to the nth coil Forming the second coil sequence The first winding is coupled to a portion of the coils in the first coil sequence and to a portion of the coils in the second coil sequence; the second winding is coupled to another portion of the coils in the first coil sequence and to another portion of the coils in the second coil sequence. Wherein, the number of coils coupled to the first winding in the first coil sequence is A1, and the number of coils coupled to the first winding in the second coil sequence is A2. ; In the first coil sequence, the number of coils coupled to the second winding is B1, and in the second coil sequence, the number of coils coupled to the second winding is B2. .

2. The radio frequency power amplifier as described in claim 1, characterized in that, The first winding includes a first primary coil, the second winding includes a second primary coil, the first primary coil is coupled to a portion of the coils in the first coil sequence and to a portion of the coils in the second coil sequence, the second primary coil is coupled to another portion of the coils in the first coil sequence and to another portion of the coils in the second coil sequence.

3. The radio frequency power amplifier as described in claim 2, characterized in that, The coil coupled to the first winding in the first coil sequence, the coil coupled to the first winding in the second coil sequence, and the first winding form a first magnetic core region; The coil coupled to the second winding in the first coil sequence, the coil coupled to the second winding in the second coil sequence, and the second winding form the second magnetic core region.

4. The radio frequency power amplifier as described in claim 1, characterized in that, The first winding includes a first primary coil, the second winding includes a second primary coil, and the third winding includes a first secondary coil, a second secondary coil, a third secondary coil, and a fourth secondary coil connected in series. The first primary coil is coupled to the first secondary coil and the fourth secondary coil, and the second primary coil is coupled to the second secondary coil and the third secondary coil; or, the first primary coil is coupled to the first secondary coil and the third secondary coil, and the second primary coil is coupled to the second secondary coil and the fourth secondary coil.

5. The radio frequency power amplifier as described in claim 1, characterized in that, The first winding includes a first primary coil, the first winding includes a second primary coil, and the third winding includes a first secondary coil, a second secondary coil, a third secondary coil, a fourth secondary coil, a fifth secondary coil, and a sixth secondary coil connected in series. The first primary coil is coupled to the first secondary coil, the fourth secondary coil, and the fifth secondary coil, and the second primary coil is coupled to the second secondary coil, the third secondary coil, and the sixth secondary coil; or, the first primary coil is coupled to the first secondary coil, the third secondary coil, and the fifth secondary coil, and the second primary coil is coupled to the second secondary coil, the fourth secondary coil, and the sixth secondary coil.

6. The radio frequency power amplifier as described in claim 1, characterized in that, The first winding includes a first primary coil, the second winding includes a second primary coil, and the third winding includes a first primary coil, a second primary coil, a third primary coil, and a fourth secondary coil; the first primary coil is coupled to the first primary coil and the fourth secondary coil, and the second primary coil is coupled to the second primary coil and the third secondary coil; The first-stage coil, second-stage coil, third-stage coil, and fourth-stage coil are disposed in the same metal layer; the first-stage coil and the fourth-stage coil are disposed in different layers of the same region within the same metal layer; the second-stage coil and the third-stage coil are disposed in different layers of the same region within the same metal layer; the first-stage coil and the fourth-stage coil are disposed in different regions of the same metal layer as the second-stage coil and the third-stage coil; or the first-stage coil and the fourth-stage coil are disposed in different layers of the same region within different metal layers; the second-stage coil and the third-stage coil are disposed in different layers of the same region within different metal layers; the first-stage coil and the second-stage coil are disposed in different regions of the same metal layer; and the third-stage coil and the fourth-stage coil are disposed in different regions of the same metal layer.

7. The radio frequency power amplifier as described in claim 1, characterized in that, The turns ratio of the coil coupled to the first winding in the third winding is in the range of (2:1, 3:1), and the number of coils coupled to the first winding in the third winding is 3. The turns ratio of the coil coupled to the second winding in the third winding is in the range of (2:1, 3:1), and the number of coils coupled to the second winding in the third winding is 3.

8. The radio frequency power amplifier as described in claim 1, characterized in that, The first winding is coupled to a portion of the coils in the first coil sequence and to a portion of the coils in the second coil sequence, and the second winding is coupled to another portion of the coils in the first coil sequence and to another portion of the coils in the second coil sequence.

9. The radio frequency power amplifier as described in claim 1, characterized in that, The n coils M are arranged in at least one metal layer. Coils arranged in different metal layers are classified as different coils. Coils arranged in different regions of the same metal layer are classified as different coils. Coils arranged in different levels of the same region are classified as different coils.

10. The radio frequency power amplifier as claimed in claim 1, characterized in that, The first winding is coupled to the odd-numbered coils in the third winding; The second winding is coupled to an even number of coils in the third winding.

11. The radio frequency power amplifier as claimed in claim 1, characterized in that, The coil set M in the first winding and the third winding 11 Coupling, M 11 = Among them, the coil set M 11 The coil in an odd position is numbered 3 to become the next coil, and the coil in an even position is numbered 1 to become the next coil. The coil set M in the second winding and the third winding 21 Coupling, M 21 = Among them, the coil set M 21 The coil in an odd position is numbered 1 to become the next coil; and the coil in an even position is numbered 3 to become the next coil.

12. The radio frequency power amplifier as claimed in claim 1, characterized in that, The coil set M in the first winding and the third winding 31 and coil set M 41 coupling, , ; The coil set M in the second winding and the third winding 51 coupling, ; Where n is a multiple of 4.

13. The radio frequency power amplifier as described in claim 1, characterized in that, The coil coupled to the first winding in the first coil sequence and the coil coupled to the second winding in the first coil sequence are disposed in the same metal layer; the coil coupled to the first winding in the second coil sequence and the coil coupled to the second winding in the second coil sequence are disposed in the same metal layer.

14. The radio frequency power amplifier as claimed in claim 1, characterized in that, The coil coupled to the first winding in the first coil sequence and the coil coupled to the second winding in the first coil sequence are disposed in different metal layers; the coil coupled to the first winding in the second coil sequence and the coil coupled to the second winding in the second coil sequence are disposed in different metal layers. Furthermore, the coil coupled to the first winding in the first coil sequence and the coil coupled to the second winding in the second coil sequence are disposed in the same metal layer, and the coil coupled to the second winding in the first coil sequence and the coil coupled to the first winding in the second coil sequence are disposed in the same metal layer.

15. The radio frequency power amplifier as claimed in claim 1, characterized in that, The coil coupled to the first winding in the first coil sequence, the coil coupled to the first winding in the second coil sequence, and the first winding are respectively disposed in different metal layers, and the projections of the coil coupled to the first winding in the first coil sequence, the coil coupled to the first winding in the second coil sequence, and the first winding in the vertical direction at least partially overlap. The coil coupled to the second winding in the first coil sequence, the coil coupled to the second winding in the second coil sequence, and the second winding are respectively disposed in different metal layers, and the projections of the coil coupled to the second winding in the first coil sequence, the coil coupled to the second winding in the second coil sequence, and the second winding in the second winding in the vertical direction at least partially overlap.

16. The radio frequency power amplifier as claimed in claim 1, characterized in that, In the first coil sequence, the coil coupled to the first winding is disposed in a metal layer adjacent to the vertically above or adjacent to the vertically below the metal layer where the first winding is located, and each coil is disposed in a different metal layer; in the second coil sequence, the coil coupled to the first winding is disposed in a metal layer adjacent to the vertically below or adjacent to the vertically above the metal layer where the first winding is located, and each coil is disposed in a different metal layer. In the first coil sequence, the coil coupled to the second winding is disposed in a metal layer adjacent to the vertically above or adjacent to the vertically below the metal layer where the second winding is located, and each coil is disposed in a different metal layer; in the second coil sequence, the coil coupled to the second winding is disposed in a metal layer adjacent to the vertically below or adjacent to the vertically above the metal layer where the second winding is located, and each coil is disposed in a different metal layer.

17. The radio frequency power amplifier as claimed in claim 1, characterized in that, The first power amplifier circuit includes a first amplifying transistor, and the second power amplifier circuit includes a second amplifying transistor; The input terminal of the first amplifying transistor is connected to the first end of the first winding, the second end of the first winding is connected to the first end of the second winding, and the input terminal of the second amplifying transistor is connected to the second end of the second winding. Alternatively, the output terminal of the first amplifying transistor is connected to the first end of the first winding, the second end of the first winding is connected to the first end of the second winding, and the output terminal of the second amplifying transistor is connected to the second end of the second winding.

18. The radio frequency power amplifier as claimed in claim 1, characterized in that, The first power amplifier circuit includes a first amplifying transistor and a third amplifying transistor, and the second power amplifier circuit includes a second amplifying transistor and a fourth amplifying transistor; The input terminal of the first amplifying transistor is connected to the first end of the first winding, the input terminal of the third amplifying transistor is connected to the second end of the first winding, the input terminal of the second amplifying transistor is connected to the second end of the second winding, and the input terminal of the fourth amplifying transistor is connected to the first end of the second winding. Alternatively, the output terminal of the first amplifying transistor is connected to the first end of the first winding, the output terminal of the third amplifying transistor is connected to the second end of the first winding, the output terminal of the second amplifying transistor is connected to the second end of the second winding, and the output terminal of the fourth amplifying transistor is connected to the first end of the second winding.

19. The radio frequency power amplifier as claimed in claim 18, characterized in that, The first amplifying transistor is a BJT transistor, including a base, a collector, and an emitter. The base of the first amplifying transistor is the input terminal of the first amplifying transistor, the collector of the first amplifying transistor is the output terminal of the first amplifying transistor, and the emitter of the first amplifying transistor is grounded. The second amplifying transistor is a BJT transistor, including a base, a collector, and an emitter. The base of the second amplifying transistor is the input terminal of the second amplifying transistor, the collector of the second amplifying transistor is the output terminal of the second amplifying transistor, and the emitter of the second amplifying transistor is grounded. The third amplifying transistor is a BJT transistor, including a base, a collector, and an emitter. The base of the third amplifying transistor is the input terminal of the third amplifying transistor, the collector of the third amplifying transistor is the output terminal of the third amplifying transistor, and the emitter of the third amplifying transistor is grounded. The fourth amplifying transistor is a BJT transistor, including a base, a collector, and an emitter. The base of the fourth amplifying transistor is the input terminal of the fourth amplifying transistor, the collector of the fourth amplifying transistor is the output terminal of the fourth amplifying transistor, and the emitter of the fourth amplifying transistor is grounded. Alternatively, the first amplifying transistor is a MOS transistor, including a gate, a source, and a drain. The gate of the first amplifying transistor is the input terminal of the first amplifying transistor, the source of the first amplifying transistor is the output terminal of the first amplifying transistor, and the drain of the first amplifying transistor is grounded. The second amplifying transistor is a MOS transistor, including a gate, a source, and a drain. The gate of the second amplifying transistor is the input terminal of the second amplifying transistor, the source of the second amplifying transistor is the output terminal of the second amplifying transistor, and the drain of the second amplifying transistor is grounded. The third amplifying transistor is a MOS transistor, including a gate, a source, and a drain. The gate of the third amplifying transistor is the input terminal of the third amplifying transistor, the source of the third amplifying transistor is the output terminal of the third amplifying transistor, and the drain of the third amplifying transistor is grounded. The fourth amplifying transistor is a MOS transistor, including a gate, a source, and a drain. The gate of the fourth amplifying transistor is the input terminal of the fourth amplifying transistor, the source of the fourth amplifying transistor is the output terminal of the fourth amplifying transistor, and the drain of the fourth amplifying transistor is grounded.

20. A radio frequency power amplifier, characterized in that, It includes a first power amplifier circuit, a second power amplifier circuit, and a matching network, wherein the matching network includes a first winding, a second winding, and a third winding; The first power amplifier circuit is connected to the first winding, and the second power amplifier circuit is connected to the second winding; the first end of the third winding is coupled to the ground end, and the second end of the third winding is coupled to the signal transmission end; The first winding includes a first primary coil, the second winding includes a second primary coil, and the third winding includes a first secondary coil, a second secondary coil, a third secondary coil, and a fourth secondary coil connected in series. The first primary coil is coupled to the first secondary coil and the fourth secondary coil, and the second primary coil is coupled to the second secondary coil and the third secondary coil; or, the first primary coil is coupled to the first secondary coil and the third secondary coil, and the second primary coil is coupled to the second secondary coil and the fourth secondary coil.

21. A radio frequency power amplifier, characterized in that, It includes a first power amplifier circuit, a second power amplifier circuit, and a matching network, wherein the matching network includes a first winding, a second winding, and a third winding; The first power amplifier circuit is connected to the first winding, and the second power amplifier circuit is connected to the second winding; the first end of the third winding is coupled to the ground end, and the second end of the third winding is coupled to the signal transmission end; The first winding includes a first primary coil, the first winding includes a second primary coil, and the third winding includes a first secondary coil, a second secondary coil, a third secondary coil, a fourth secondary coil, a fifth secondary coil, and a sixth secondary coil connected in series. The first primary coil is coupled to the first secondary coil, the fourth secondary coil, and the fifth secondary coil, and the second primary coil is coupled to the second secondary coil, the third secondary coil, and the sixth secondary coil; or, the first primary coil is coupled to the first secondary coil, the third secondary coil, and the fifth secondary coil, and the second primary coil is coupled to the second secondary coil, the fourth secondary coil, and the sixth secondary coil.

22. A radio frequency front-end module, characterized in that, Including the radio frequency power amplifier as described in any one of claims 1-21.

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