Organic light emitting display device and method of manufacturing same

Abstract

The invention discloses an organic light emitting display device and a method of manufacturing the same. The organic light-emitting display device comprises a substrate, anodes arranged in pixel regions, a first insulating layer filled between the pixel regions, a second insulating layer arranged on the first insulating layer, and a third insulating layer arranged on the second insulating layer, the fourth insulating layer is arranged on the third insulating layer; the fifth insulating layer is arranged on the fourth insulating layer; and the material of the second insulating layer is different from that of the third insulating layer. According to the organic light-emitting display device and the manufacturing method thereof provided by the embodiment of the invention, in the process of etching and forming the third insulating layer, the fourth insulating layer and the fifth insulating layer, the second insulating layer is used for blocking etching, so that the first insulating layer is prevented from being damaged by etching, the quality and the flatness of a subsequent film layer deposited on the first insulating layer are improved, and the yield of the organic light-emitting display device is improved. And the luminous efficiency and the uniformity are improved.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to an organic light emitting display device and a manufacturing method thereof. Background Art

[0002] An organic light emitting display device is a display device that uses organic light emitting diodes (OLED) as display pixels. Compared with traditional liquid crystal display devices, organic light emitting display devices have many advantages such as self-luminescence, low power consumption, good color effects, and can be used for flexible displays, and are becoming more and more popular in the market.

[0003] Figure 1 is a schematic diagram of a partial cross-sectional structure of an organic light emitting display device in the related art, such as Figure 1 As shown, an array of pixels 20' is provided on one side of the substrate 10'. The pixel 20' includes a stacked anode 11', an organic light-emitting layer 18' and a cathode 19'. When electrons and holes are respectively injected from the cathode 19' and the anode 11' into the organic light-emitting layer 18', the electrons and holes recombine in the organic light-emitting layer 18' to release energy and emit light. The material of the organic light-emitting layer 18' can determine the light-emitting color of the pixel 20'.

[0004] A pixel definition layer 21 ′ is disposed on the upper layer of the anode 11 ′. The pixel definition layer 21 ′ is located between adjacent pixels 20 ′ and is used to divide and define each pixel area.

[0005] The organic light-emitting layer 18' is formed on the upper layer of the pixel definition layer 21', and the organic light-emitting layer 18' includes a first carrier adjustment layer 181', a light-emitting material layer 182' and a second carrier adjustment layer 183' which are stacked in sequence. The first carrier adjustment layer 181' and the second carrier adjustment layer 183' are both arranged as a whole layer, that is, the first carrier adjustment layer 181' and the second carrier adjustment layer 183' are continuous film layers between each pixel 20'.

[0006] Among them, leakage current will be generated on the first carrier adjustment layer 181', and the leakage current will flow to the cathode 19' through the light-emitting material layer 182' located above the pixel definition layer 21', so that light leakage will form at the corners of the pixel 20'. This part of the leakage current will also weaken the current required for the normal light emission of the pixel 20', thereby causing the overall brightness of the pixel 20' to decrease. Summary of the invention

[0007] The present invention provides an organic light emitting display device and a manufacturing method thereof, so as to solve the problems of light leakage at the corner of a pixel and uneven display inside the pixel.

[0008] According to one aspect of the present invention, there is provided an organic light emitting display device, comprising:

[0009] A substrate, the substrate comprising a plurality of pixel regions arranged at intervals;

[0010] an anode disposed in the pixel region;

[0011] A first insulating layer filled between the pixel regions;

[0012] a second insulating layer disposed on the first insulating layer;

[0013] a third insulating layer disposed on the second insulating layer, wherein the material of the second insulating layer is different from that of the third insulating layer;

[0014] a fourth insulating layer disposed on the third insulating layer;

[0015] A fifth insulating layer is disposed on the fourth insulating layer, and an edge of the fifth insulating layer exceeds an edge of the fourth insulating layer.

[0016] According to another aspect of the present invention, there is provided a method for manufacturing an organic light emitting display device, comprising:

[0017] Providing a substrate, the substrate comprising a plurality of pixel regions arranged at intervals;

[0018] forming an anode in the pixel region;

[0019] forming a first insulating material layer on the upper layer of the anode;

[0020] Etching the first insulating material layer to form a first insulating layer, wherein the first insulating layer is located between adjacent pixel regions;

[0021] forming a second insulating material layer on the first insulating layer;

[0022] forming a third insulating material layer on the second insulating material layer, wherein the material of the second insulating material layer is different from that of the third insulating material layer;

[0023] forming a fourth insulating material layer on the third insulating material layer;

[0024] forming a fifth insulating material layer on the fourth insulating material layer;

[0025] Etching the third insulating material layer, the fourth insulating material layer and the fifth insulating material layer to form a third insulating layer, a fourth insulating layer and a fifth insulating layer;

[0026] Etching the sidewall of the fourth insulating layer so that the edge of the fifth insulating layer exceeds the edge of the fourth insulating layer;

[0027] The second insulating material layer is etched to form a second insulating layer.

[0028] The organic light-emitting display device and the manufacturing method thereof provided by the embodiment of the present invention are stacked on the first insulating layer filled between the pixel regions, and the edge of the fifth insulating layer exceeds the edge of the fourth insulating layer, so as to cut off the first carrier adjustment layer in the organic light-emitting layer at the edge of the fifth insulating layer, thereby preventing the first carrier adjustment layer from forming a longitudinal leakage current between adjacent pixel regions, improving the problem of light leakage at the corners of the pixels, and ensuring that the current required for normal light emission of the pixels is supplied, thereby improving the accuracy of pixel brightness control. Furthermore, by arranging a second insulating layer between the first insulating layer and the third insulating layer, and the material of the second insulating layer is different from that of the third insulating layer, in the process of etching to form the third insulating layer, the fourth insulating layer and the fifth insulating layer, the second insulating layer is used to block the etching, so as to prevent the first insulating layer from being damaged by etching, thereby improving the quality and flatness of the subsequent film layer (such as the organic light-emitting layer) deposited on the first insulating layer, and improving the light-emitting efficiency and uniformity.

[0029] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0031] Figure 1 is a schematic diagram of a partial cross-sectional structure of an organic light emitting display device in the related art;

[0032] Figure 2 A schematic structural diagram of an organic light emitting display device provided by an embodiment of the present invention;

[0033] Figure 3 for Figure 2 Schematic diagram of the cross-sectional structure along the A-A' direction;

[0034] Figure 4 A schematic diagram of a partial cross-sectional structure of an organic light emitting display device provided by an embodiment of the present invention;

[0035] Figure 5 A schematic diagram of a film layer structure of a pixel provided by an embodiment of the present invention;

[0036] Figure 6 A schematic diagram of a film layer structure of another pixel provided by an embodiment of the present invention;

[0037] Figure 7 A schematic diagram of a process of manufacturing an organic light emitting display device provided by an embodiment of the present invention;

[0038] Figure 8 A schematic flow chart of another method for manufacturing an organic light emitting display device provided by an embodiment of the present invention;

[0039] Fig. 9 A schematic diagram of a partial cross-sectional structure of another organic light emitting display device provided by an embodiment of the present invention;

[0040] Fig.10 A schematic flow chart of another method for manufacturing an organic light emitting display device provided by an embodiment of the present invention;

[0041] Fig.11 A schematic structural diagram of another organic light emitting display device provided by an embodiment of the present invention;

[0042] Fig.12 for Fig.11 Schematic diagram of the cross-sectional structure along the B-B' direction;

[0043] Fig.13 A structural schematic diagram of an evaporation process provided for related technologies;

[0044] Fig.14 A schematic structural diagram of another evaporation process provided by an embodiment of the present invention;

[0045] Fig.15 A schematic diagram of a partial cross-sectional structure of another organic light emitting display device provided by an embodiment of the present invention;

[0046] Fig.16 A schematic diagram of a partial cross-sectional structure of another organic light emitting display device provided by an embodiment of the present invention;

[0047] Fig.17 A schematic diagram of a partial cross-sectional structure of another organic light emitting display device provided by an embodiment of the present invention;

[0048] Fig.18 A schematic flow chart of another method for manufacturing an organic light emitting display device provided by an embodiment of the present invention;

[0049] Fig.19 A schematic diagram of a partial cross-sectional structure of another organic light emitting display device provided by an embodiment of the present invention;

[0050] Fig. 20A schematic diagram of a partial cross-sectional structure of another organic light emitting display device provided by an embodiment of the present invention;

[0051] Fig.21 A schematic diagram of a partial cross-sectional structure of another organic light emitting display device provided by an embodiment of the present invention;

[0052] Fig. 22 A schematic flow chart of another method for manufacturing an organic light emitting display device provided by an embodiment of the present invention;

[0053] Figure 23-Figure 33 A schematic flow chart of another method for manufacturing an organic light emitting display device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0054] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0055] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0056] Figure 2 A schematic diagram of the structure of an organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Figure 3 for Figure 2 The schematic diagram of the cross-sectional structure along the A-A' direction is as follows: Figure 2 and Figure 3 As shown, the organic light emitting display device provided by the embodiment of the present invention includes:

[0057] The substrate 10 includes a plurality of pixel regions 101 that are spaced apart from each other.

[0058] The anode 11 is disposed in the pixel region 101 .

[0059] A first insulating layer 12 is filled between the pixel regions 101 .

[0060] The second insulating layer 13 is disposed on the first insulating layer 12 .

[0061] The third insulating layer 14 is disposed on the second insulating layer 13 , and the material of the second insulating layer 13 is different from that of the third insulating layer 14 .

[0062] The fourth insulating layer 15 is disposed on the third insulating layer 14 .

[0063] The fifth insulating layer 16 is disposed on the fourth insulating layer 15 , and an edge of the fifth insulating layer 16 exceeds an edge of the fourth insulating layer 15 .

[0064] Specifically, Figure 2 and Figure 3 As shown, the substrate 10 may be a driving substrate, and a plurality of pixel regions 101 arranged in an array are defined on the substrate 10 .

[0065] Figure 4 A partial cross-sectional structural diagram of an organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Figure 4 As shown, optionally, the substrate 10 includes a substrate 31, on which a driving transistor T corresponding to the pixel area 101 is arranged, and the driving transistor T is connected to the anode 11. The driving transistor T can provide a working signal corresponding to the luminous brightness to the pixel through the anode 11 to drive the pixel to emit light.

[0066] The driving transistor T may include an active region T1 , a gate T2 , and a source-drain electrode layer T3 that are stacked. The active region T1 may be formed in the substrate 31 , but is not limited thereto. The embodiment of the present invention does not specifically limit this.

[0067] Continue to refer Figure 2-Figure 4 An anode 11 is formed in a pixel area 101 on a substrate 10. The anodes 11 corresponding to each pixel area 101 are electrically isolated from each other. The anode 11, as an electrode of the pixel, can inject carriers (such as holes) into the pixel under the drive of a positive voltage of an external power supply.

[0068] Furthermore, if Figure 3 and Figure 4As shown, a first insulating layer 12 is filled between adjacent anodes 11. In the lateral direction, the first insulating layer 12 is located between two adjacent anodes 11. The first insulating layer 12 helps to ensure electrical insulation between the two adjacent anodes 11. At the same time, since the anodes 11 have a certain thickness, a pit is formed between the two anodes 11. Filling the first insulating layer 12 between two adjacent anodes 11 is also beneficial to reducing the height difference between the area where the anode 11 is located and the area where the pit is located, so that subsequent film layers can be prepared on a relatively flat surface, thereby ensuring the continuity of subsequent film layers.

[0069] Among them, the material of the first insulating layer 12 may include at least one of silicon oxide (SiO) and silicon nitride (SiN). Both silicon oxide and silicon nitride have high resistivity and can play a good insulating role between adjacent anodes 11. At the same time, silicon oxide and silicon nitride also have strong chemical stability and excellent high-temperature stability. They are not easily corroded by moisture, oxygen and other harmful gases in the environment, and can maintain good insulation properties in high-temperature environments, which is beneficial to extending the service life of the device.

[0070] Continue to refer Figure 3 and Figure 4 A third insulating layer 14, a fourth insulating layer 15 and a fifth insulating layer 16 are stacked on the first insulating layer 12, wherein the third insulating layer 14, the fourth insulating layer 15 and the fifth insulating layer 16 are all arranged around the pixel area 101, and the area defined by them can be any shape such as a rectangle, a polygon or a circle, and the embodiment of the present invention does not make any specific limitation on this.

[0071] Further, the fifth insulating layer 16 covers the fourth insulating layer 15, and the edge of the fifth insulating layer 16 exceeds the edge of the fourth insulating layer 15. At this time, the distance between the vertical projection of the edge of the fifth insulating layer 16 on the substrate 10 and the vertical projection of the edge of the fourth insulating layer 15 on the substrate 10 is greater than 0, that is, the length of the fifth insulating layer 16 in the lateral direction is greater than the length of the fourth insulating layer 15 in the lateral direction, or, in other words, the projection area of ​​the fifth insulating layer 16 on the substrate 10 is greater than the projection area of ​​the fourth insulating layer 15 on the substrate 10, and the opening formed on the fifth insulating layer 16 is smaller than the opening formed on the fourth insulating layer 15, so that the opening edge of the fifth insulating layer 16 protrudes further toward the inside of the light-emitting area of ​​the pixel than the opening edge of the fourth insulating layer 15, and the opening edge of the fourth insulating layer 15 is recessed toward the side away from the light-emitting area of ​​the pixel relative to the opening edge of the fifth insulating layer 16, so that the edge portion of the fifth insulating layer 16 forms an eaves structure above the edge of the fourth insulating layer 15.

[0072] Continue to refer Figure 3 and Figure 4The pixel region 101 also includes an organic light-emitting layer 18 disposed on the anode 11 , and the organic light-emitting layer 18 includes a first carrier adjustment layer 181 , a light-emitting material layer 182 , and a second carrier adjustment layer 183 which are stacked in sequence.

[0073] When preparing the organic light-emitting layer 18, the eaves structure at the edge of the fifth insulating layer 16 will block part of the upper surface of the third insulating layer 14, thereby forming a blocking area under the eaves structure at the edge of the fifth insulating layer 16. The first carrier adjustment layer 181 that is prone to leakage current in the organic light-emitting layer 18 is partially deposited on the upper surface of the fifth insulating layer 16, and partially deposited on the upper surface of the third insulating layer 14, but the first carrier adjustment layer 181 cannot be deposited in the blocking area, so the first carrier adjustment layer 181 will be cut off at the blocking area, so that the first carrier adjustment layer 181 deposited on the upper surface of the fifth insulating layer 16 and the first carrier adjustment layer 181 deposited on the upper surface of the third insulating layer 14 cannot form a connection at the blocking area and are disconnected.

[0074] Such a configuration can prevent the first carrier adjustment layer 181 from forming a longitudinal leakage current between adjacent pixel regions 101, improve the light leakage problem at the corners of the pixels, and ensure that the current required for normal pixel emission is supplied, which is beneficial to improving the accuracy of pixel brightness control.

[0075] Figure 5 A schematic diagram of a film structure of a pixel provided by an embodiment of the present invention is shown in FIG. Figure 5 As shown, optionally, the organic light-emitting layer 18 is located between the anode 11 and the cathode 19, the first carrier adjustment layer 181 is located between the anode 11 and the light-emitting material layer 182, the second carrier adjustment layer 183 is located between the cathode 19 and the light-emitting material layer 182, the first carrier adjustment layer 181 may include a hole injection layer HIL and a hole transport layer HTL, and the second carrier adjustment layer 183 may include an electron transport layer ETL and an electron injection layer EIL.

[0076] Among them, the hole injection layer HIL is located on the anode 11, which is used to reduce the energy barrier of injecting holes from the anode 11 to the organic light-emitting layer 18, so that the holes can be more effectively transferred from the anode 11 to the hole transport layer HTL, thereby improving the hole injection efficiency and thus improving the luminous efficiency and brightness of the pixel.

[0077] The hole transport layer HTL is located on the hole injection layer HIL, and is used to effectively transport the holes injected from the anode 11 to the light-emitting material layer 182, ensuring that the holes and the electrons in the light-emitting material layer 182 are effectively combined to generate photons.

[0078] The electron transport layer ETL is located on the light emitting material layer 182 and is used to effectively transport electrons from the cathode 19 to the light emitting material layer 182 to ensure that the electrons can be quickly and effectively transported to the light emitting material layer 182 and recombine with holes to emit photons.

[0079] The electron injection layer EIL is located on the electron transport layer ETL, and is used to reduce the energy barrier of electrons injected from the cathode 19 to the light-emitting material layer 182, thereby improving the electron injection efficiency. At the same time, the electron injection layer EIL can take into account good interface contact and energy level matching with the cathode 19 and the electron transport layer ETL, ensuring that electrons can be easily injected into the light-emitting material layer 182 to participate in the light-emitting process.

[0080] Continue to refer Figure 3-Figure 5 For example, the hole injection layer HIL and the hole transport layer HTL can be disconnected in the shielding area under the eaves structure at the edge of the fifth insulating layer 16 to prevent the hole injection layer HIL and the hole transport layer HTL from forming a longitudinal leakage current between adjacent pixel areas 101, thereby improving the problem of light leakage at the corners of the pixels and ensuring the supply of current required for the pixels to emit light normally, which is beneficial to improving the accuracy of pixel brightness control.

[0081] Figure 6 A schematic diagram of a film layer structure of another pixel provided in an embodiment of the present invention is shown in FIG. Figure 6 As shown, optionally, the pixel can adopt a tandem organic light-emitting diode (Tandem OLED) structure, and the Tandem OLED connects two or even more light-emitting material layers in series through a charge generation layer (Charge Generation Layer, CGL), wherein the charge generation layer can reduce the driving voltage and generate new carriers, and multiple light-emitting material layer strings can multiply the luminous efficiency of the pixel; at the same time, at the same brightness, the current density of the Tandem OLED will be reduced, thereby significantly increasing the life of the device.

[0082] For example, Figure 6 As shown, the charge generation layer is composed of an N-type charge generation layer N-CGL and a P-type charge generation layer P-CGL. The N-type charge generation layer can be an organic electron transport material doped with a metal material. The P-type charge generation layer can be an organic hole transport material doped with a P-type light-emitting dopant (p-dopant, PD).

[0083] Furthermore, if Figure 6As shown, taking two layers of light-emitting material layers connected in series as an example, the first carrier adjustment layer 181 may include a hole injection layer HIL and a hole transport layer HTL, the second carrier adjustment layer 183 may include an electron transport layer ETL and an electron injection layer EIL, and a hole blocking layer HBL, an N-type charge generation layer N-CGL, a P-type charge generation layer P-CGL and a hole transport layer HTL may be stacked in sequence between the two light-emitting material layers 182, but is not limited to this.

[0084] Among them, the N-type charge generation layer N-CGL and the P-type charge generation layer P-CGL are both set as a whole layer, that is, the N-type charge generation layer N-CGL and the P-type charge generation layer P-CGL are continuous film layers between each pixel. When the organic light-emitting display device is working, leakage current is easy to flow laterally through the N-type charge generation layer N-CGL and the P-type charge generation layer P-CGL, thereby causing crosstalk problems.

[0085] Continue to refer Figure 3 and Figure 6 Optionally, the N-type charge generation layer N-CGL and the P-type charge generation layer P-CGL, as well as the hole blocking layer HBL, the light-emitting material layer 182 and the first carrier adjustment layer 181 located under the N-type charge generation layer N-CGL can be disconnected in the shielding area under the eaves structure at the edge of the fifth insulating layer 16 to prevent the N-type charge generation layer N-CGL, the P-type charge generation layer P-CGL and the underlying film layers from forming leakage current between adjacent pixel areas 101, thereby improving the crosstalk problem.

[0086] In other embodiments, the specific film layer structure in the first carrier adjustment layer 181 and the second carrier adjustment layer 183, as well as the specific film layer separated by the eaves structure at the edge of the fifth insulating layer 16 can be set according to actual needs, and the embodiments of the present invention do not specifically limit this.

[0087] Figure 7 A schematic diagram of a method for manufacturing an organic light emitting display device according to an embodiment of the present invention is shown in FIG. Figure 7 As shown, in the related art, when preparing an organic light emitting display device, as shown in FIG. Figure 7 As shown in (a), a third insulating material layer 140, a fourth insulating material layer 150 and a fifth insulating material layer 160 are sequentially deposited on the first insulating layer 12. Figure 7 As shown in (b), the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160 are etched to form a third insulating layer 14, a fourth insulating layer 15 and a fifth insulating layer 16. Figure 7 As shown in (c), the side wall of the fourth insulating layer 15 is etched so that the edge of the fifth insulating layer 16 exceeds the edge of the fourth insulating layer 15.

[0088] The inventors have found that during the above etching process, the first insulating layer 12 below the third insulating layer 14 will be damaged, which will affect the quality and flatness of subsequent film layers (such as organic light-emitting layers) deposited thereon, and further affect the light-emitting efficiency and uniformity.

[0089] Based on the above technical issues, such as Figure 3 and Figure 4 As shown, in this embodiment, the second insulating layer 13 is disposed between the first insulating layer 12 and the third insulating layer 14 .

[0090] Figure 8 A schematic diagram of a process for manufacturing another organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Figure 8 As shown, in this embodiment, when preparing an organic light emitting display device, as shown in FIG. Figure 8 As shown in (a), the second insulating material layer 130, the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160 can be sequentially deposited on the first insulating layer 12. Figure 8 As shown in (b), the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160 are etched to form a third insulating layer 14, a fourth insulating layer 15 and a fifth insulating layer 16. Figure 8 As shown in (c), the side wall of the fourth insulating layer 15 is etched so that the edge of the fifth insulating layer 16 exceeds the edge of the fourth insulating layer 15. Figure 8 As shown in (d), the second insulating material layer 130 is etched to form a second insulating layer 13.

[0091] Among them, the material of the second insulating layer 13 is different from the material of the third insulating layer 14, that is, the material of the second insulating material layer 130 is different from the material of the fourth insulating material layer 150. In the above-mentioned process of etching the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160, the second insulating material layer 130 can protect the first insulating layer 12 thereunder due to its different materials, so that the first insulating layer 12 is protected from etching damage, thereby improving the quality and flatness of subsequent film layers (such as organic light-emitting layers) deposited on the first insulating layer 12, and improving the luminous efficiency and uniformity.

[0092] Optionally, the material of the fifth insulating layer 16 includes at least one of silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON) and amorphous silicon (a-Si).

[0093] and / or,

[0094] The material of the fourth insulating layer 15 includes at least one of silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), and amorphous silicon (a-Si).

[0095] and / or,

[0096] The material of the third insulating layer 14 includes at least one of silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), and amorphous silicon (a-Si).

[0097] Among them, silicon nitride (SiN), silicon oxide (SiO), and silicon oxynitride (SiON) have high resistivity and can play a good insulating role for the first carrier adjustment layer 181 located on the upper surface of the third insulating layer 14. At the same time, silicon nitride (SiN), silicon oxide (SiO), and silicon oxynitride (SiON) also have good chemical stability and thermal stability, can maintain good insulation performance in a high temperature environment, and are conducive to extending the service life of the device.

[0098] Amorphous silicon (a-Si) can be deposited by a variety of deposition methods (such as Plasma-Enhanced Chemical Vapor Deposition (PECVD)), has good process compatibility, and has good mechanical stability. It can provide good structural support, which is beneficial to ensure the stability of the structure in subsequent process steps.

[0099] In summary, the organic light-emitting display device provided by the embodiment of the present invention is provided with a third insulating layer, a fourth insulating layer and a fifth insulating layer stacked on the first insulating layer filled between the pixel regions, and the edge of the fifth insulating layer exceeds the edge of the fourth insulating layer, so as to cut off the first carrier adjustment layer in the organic light-emitting layer at the edge of the fifth insulating layer, thereby preventing the first carrier adjustment layer from forming a longitudinal leakage current between adjacent pixel regions, improving the problem of light leakage at the corners of the pixels, and ensuring that the current required for normal light emission of the pixels is supplied, thereby improving the accuracy of pixel brightness control. Furthermore, by providing a second insulating layer between the first insulating layer and the third insulating layer, and the material of the second insulating layer is different from that of the third insulating layer, in the process of etching to form the third insulating layer, the fourth insulating layer and the fifth insulating layer, the second insulating layer is used to block the etching, so as to prevent the first insulating layer from being damaged by etching, thereby improving the quality and flatness of the subsequent film layer (such as the organic light-emitting layer) deposited on the first insulating layer, and improving the light-emitting efficiency and uniformity.

[0100] Continue to refer Figure 8 Optionally, the material of the second insulating layer 13 is different from the material of the first insulating layer 12 .

[0101] Specifically, Figure 8As shown in (d), after forming the third insulating layer 14, the fourth insulating layer 15 and the fifth insulating layer 16, the second insulating material layer 130 is etched to remove the second insulating material layer 130 above the anode 11 to form the second insulating layer 13. Wherein, the material of the second insulating layer 13 is different from the material of the first insulating layer 12, that is, the material of the second insulating material layer 130 is different from the material of the first insulating layer 12, and in the process of etching the second insulating material layer 130, an etchant with high selectivity to the material of the second insulating material layer 130 can be selected, so as to reduce damage to the first insulating layer 12 when etching the second insulating material layer 130.

[0102] Continue to refer Figure 8 Optionally, the thickness of the second insulating layer 13 is 5 nm to 50 nm.

[0103] Among them, the thickness of the second insulating layer 13 is greater than or equal to 5nm. At this time, the second insulating material layer 130 used to form the second insulating layer 13 has a sufficient thickness. Then, during the process of etching the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160, it can be ensured that the second insulating material layer 130 will not be completely removed during the etching process, thereby providing sufficient protection for the first insulating layer 12.

[0104] Furthermore, the thickness of the second insulating layer 13 is less than or equal to 50 nm. At this time, the thickness of the second insulating material layer 130 used to form the second insulating layer 13 will not be too thick. Therefore, in the process of etching the second insulating material layer 130 to form the second insulating layer 13, the etching will not be difficult or the process complexity will not be increased due to the second insulating material layer 130 being too thick.

[0105] Optionally, the material of the second insulating layer 13 includes at least one of aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ) or hafnium oxide (HfO 2 ).

[0106] The material of the second insulating layer 13 is different from that of the third insulating layer 14 and the first insulating layer 12 , and the second insulating material layer 130 used to form the second insulating layer 13 is different from that of the third insulating layer 14 and the first insulating layer 12 to achieve etching selectivity.

[0107] like Figure 8As shown, in the process of etching the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160, an etchant with high selectivity to the materials of the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160 can be selected. Then, in the etching process, the second insulating material layer 130 can protect the first insulating layer 12 thereunder, reduce damage to the first insulating layer 12, and thus protect the integrity of the structure of the first insulating layer 12.

[0108] At the same time, aluminum oxide (Al2O3), titanium oxide (TiO2), zirconium oxide (ZrO2) and hafnium oxide (HfO2) have good chemical stability and mechanical strength, which are beneficial for resisting erosion from the external environment and extending the service life of the device.

[0109] Continue to refer Figure 3 and Figure 4 Optionally, a vertical projection of the second insulating layer 13 on the substrate 10 covers a vertical projection of the third insulating layer 14 on the substrate 10 .

[0110] Among them, Figure 3 and Figure 4 As shown, the edge of the second insulating layer 13 can exceed the edge of the third insulating layer 14, that is, the length of the second insulating layer 13 in the lateral direction can be greater than the length of the third insulating layer 14 in the lateral direction, or in other words, the projection area of ​​the second insulating layer 13 on the substrate 10 is greater than the projection area of ​​the third insulating layer 14 on the substrate 10.

[0111] With such a configuration, when preparing the first carrier adjustment layer 181 , the first carrier adjustment layer 181 will be sequentially raised at the edge of the second insulating layer 13 and the edge of the third insulating layer 14 , thereby extending the transmission path length of the current on the first carrier adjustment layer 181 , which is beneficial to reducing the leakage current between adjacent pixel areas 101 .

[0112] Fig. 9 A partial cross-sectional structural diagram of another organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig. 9 As shown, optionally, a vertical projection of the second insulating layer 13 on the substrate 10 coincides with a vertical projection of the third insulating layer 14 on the substrate 10 .

[0113] The second insulating layer 13 and the third insulating layer 14 are arranged to have their vertical projections overlapped on the substrate 10 , and when preparing the second insulating layer 13 , the third insulating layer 14 can be directly used as a mask for etching.

[0114] Specifically, Fig.10 A schematic flow chart of another method for manufacturing an organic light emitting display device provided by an embodiment of the present invention is shown as follows: Fig.10As shown in (a), the second insulating material layer 130 is etched to form the second insulating layer 13, wherein the third insulating layer 14 can be directly used as a mask to etch the second insulating material layer 130 without the need to set up an additional mask plate, thereby reducing manufacturing costs, simplifying the process flow, and improving production efficiency.

[0115] At the same time, if Fig.10 As shown in (b), by using the third insulating layer 14 as a mask, higher etching accuracy can be provided to ensure that the edge of the second insulating layer 13 is aligned with the edge of the third insulating layer 14, thereby reducing problems such as interlayer misalignment caused by process errors caused by additional mask steps.

[0116] Fig.11 A schematic diagram of the structure of another organic light emitting display device provided by an embodiment of the present invention, Fig.12 for Fig.11 The schematic diagram of the cross-sectional structure along the B-B' direction is as follows: Fig.11 and Fig.12 As shown, optionally, the pixel region 101 also includes an organic light-emitting layer 18 disposed on the anode 11, and the organic light-emitting layer 18 includes an organic light-emitting layer 18 that emits light of multiple colors. In the direction of rows or columns, the light-emitting colors of the organic light-emitting layers 18 in adjacent pixel regions 101 are different.

[0117] Specifically, Fig.11 and Fig.12 As shown, an organic light-emitting layer 18 is arranged on the anode 11, and a cathode 19 is arranged on the organic light-emitting layer 18. When electrons and holes are respectively injected from the cathode 19 and the anode 11 into the organic light-emitting layer 18, the electrons and holes recombine in the organic light-emitting layer 18 to release energy and emit light.

[0118] The material of the organic light-emitting layer 18 may determine the light-emitting color of the organic light-emitting layer 18 .

[0119] like Fig.11 and Fig.12 As shown, the pixel area 101 can be divided into a red pixel area 101R, a green pixel area 101G and a blue pixel area 101B, and the organic light-emitting layer 18 can include a red organic light-emitting layer 18R arranged in the red pixel area 101R, a green organic light-emitting layer 18G arranged in the green pixel area 101G and a blue organic light-emitting layer 18B arranged in the blue pixel area 101B, so as to realize color image display, but is not limited to this. In some embodiments, the organic light-emitting layer 18 may further include a white or other color organic light-emitting layer in addition to the organic light-emitting layers of the above three colors.

[0120] In the organic light-emitting display device, the red organic light-emitting layer 18R includes a red light-emitting material layer 182R, the green organic light-emitting layer 18G includes a green light-emitting material layer 182G, and the blue organic light-emitting layer 18B includes a blue light-emitting material layer 182B, and the organic materials of the red light-emitting material layer 182R, the green light-emitting material layer 182G, and the blue light-emitting material layer 182B are generally different.

[0121] In the related art, in the preparation process of an organic light-emitting display device with a light-emitting structure such as the above-mentioned, a fine metal mask (Fine Metal Mask, FMM) is usually required to evaporate and form a red light-emitting material layer, a green light-emitting material layer and a blue light-emitting material layer respectively. Since the fine metal mask itself has production deviations, alignment deviations and thermal deformation problems, it will cause problems such as a large deviation between the film forming position of the organic light-emitting material layer and the preset position. In addition, the cost of the fine metal mask is relatively high, resulting in a high production cost of the organic light-emitting display device. Moreover, for high-resolution micro-displays, due to the difficulty of the process, it is difficult for the fine metal mask to achieve the size of an ultra-small metal hollow opening.

[0122] In this embodiment, organic light-emitting layers 18 of different colors can be formed in different pixel regions 101 by etching process, and at least part of the common film layer in the organic light-emitting layer 18 can be divided by the fifth insulating layer 16 and the fourth insulating layer 15, so that at least part of the common film layer between adjacent pixel regions 101 is isolated from each other, thereby reducing the leakage current between adjacent pixel regions 101. There is no need to use a fine metal mask (Fine Metal Mask, FMM), so that the problem of large deviation between the film forming position of the organic light-emitting material layer and the preset position caused by the manufacturing deviation, alignment deviation and thermal deformation of the fine metal mask itself can be avoided, which helps to meet the user's high-resolution requirements for the organic light-emitting display device. At the same time, not using a fine metal mask can also reduce the manufacturing cost of the organic light-emitting display device.

[0123] Continue to refer Figure 3 and Fig.12 Optionally, a first angle θ1 is formed between the bottom surface of the fifth insulating layer 16 and the side surface of the fifth insulating layer 16 , and the first angle θ1 is in the range of 20° to 60°.

[0124] Specifically, Fig.13 A schematic diagram of a vapor deposition process provided for related technologies, such as Fig.13As shown, during the evaporation process, the evaporation source 40 and the substrate 10 have a certain relative movement. The evaporation material is heated and vaporized in the evaporation source 40, sprayed through the nozzle 41, and then evaporated onto the substrate 10 through the opening formed by the fifth insulating layer 16 to form a corresponding organic light-emitting layer 18. In the evaporation deposition process, the evaporation material sprayed from the nozzle 41 is sprayed in a beam shape, and the fifth insulating layer 16 will block the evaporation material. When the first angle θ1 between the bottom surface of the fifth insulating layer 16 facing the substrate 10 and its side surface is large (for example, θ1 ≥ 90°), since the fifth insulating layer 16 has a certain thickness, the vertex 161 of the fifth insulating layer 16 close to the evaporation source 40 will cause a larger shielding area 42, and the evaporation material cannot be uniformly deposited into a film in the shielding area 42, resulting in poor evaporation.

[0125] Continue to refer Figure 3 and Fig.12 In the present embodiment, a first angle θ1 between the bottom surface of the fifth insulating layer 16 and the side surface of the fifth insulating layer 16 is set to be less than or equal to 60°, wherein the top surface of the fifth insulating layer 16 refers to the surface of the fifth insulating layer 16 away from the substrate 10, and the bottom surface of the fifth insulating layer 16 refers to the surface of the fifth insulating layer 16 close to the substrate 10.

[0126] like Figure 3 and Fig.12 As shown, at this time, the width of the top surface of the fifth insulating layer 16 is smaller than the width of the bottom surface of the fifth insulating layer 16, that is, the length of the bottom surface of the fifth insulating layer 16 in the lateral direction is greater than the length of the top surface of the fifth insulating layer 16 in the lateral direction, or in other words, the projection area of ​​the bottom surface of the fifth insulating layer 16 on the substrate 10 is greater than the projection area of ​​the top surface of the fifth insulating layer 16 on the substrate 10.

[0127] Fig.14 A schematic diagram of another evaporation process provided by an embodiment of the present invention is shown in FIG. Fig.14 As shown, when the first angle θ1 between the bottom surface of the fifth insulating layer 16 and the side surface of the fifth insulating layer 16 is less than or equal to 60°, the shielding of the fifth insulating layer 16 on the evaporated material can be reduced, so that more evaporated material can pass through the opening formed by the fifth insulating layer 16, thereby increasing the area of ​​the organic light-emitting layer 18 on the substrate 10 where the evaporated material is evaporated, so that the coverage area of ​​the organic light-emitting layer 18 is closer to the designed regional pattern, thereby improving the evaporation accuracy of the organic light-emitting layer 18.

[0128] Furthermore, the top surface width of the fifth insulating layer 16 is a design value predetermined according to specific needs. The smaller the first angle θ1 between the bottom surface of the fifth insulating layer 16 and the side surface of the fifth insulating layer 16, the larger the width of the bottom surface of the fifth insulating layer 16 will be, and the larger the overall width of the fifth insulating layer 16 will be. When preparing the organic light-emitting layer 18, the fifth insulating layer 16 will form a larger area of ​​​​blocking for the material of the organic light-emitting layer 18, thereby reducing the coverage area of ​​the organic light-emitting layer 18 in the pixel area 101, so that the area where the organic light-emitting layer 18 can effectively emit light is reduced, that is, the portion actually used for light emission in the pixel area 101 becomes smaller, affecting the overall brightness and energy efficiency of the display device.

[0129] In this embodiment, the first angle θ1 between the bottom surface of the fifth insulating layer 16 and the side surface of the fifth insulating layer 16 is set to be greater than or equal to 20°, which can avoid the first angle θ1 being too small and causing the overall width of the fifth insulating layer 16 to be too large, thereby ensuring that the overall width of the fifth insulating layer 16 is relatively small. When preparing the organic light-emitting layer 18, the shielding area of ​​the material of the organic light-emitting layer 18 by the fifth insulating layer 16 can be reduced, and the coverage area of ​​the organic light-emitting layer 18 in the pixel area 101 can be increased, thereby increasing the area where the organic light-emitting layer 18 can effectively emit light, thereby improving the overall brightness and energy efficiency of the display device.

[0130] Meanwhile, the first angle θ1 is greater than or equal to 20°, which can prevent the edge of the fifth insulating layer 16 from being too thin, thereby preventing the edge of the fifth insulating layer 16 from being damaged in subsequent processes, which is beneficial to ensuring the integrity of the fifth insulating layer 16 .

[0131] Continue to refer Figure 3 and Fig.12 Optionally, the thickness of the fifth insulating layer 16 is 10 nm to 100 nm.

[0132] Among them, by setting the thickness of the fifth insulating layer 16 to be less than or equal to 100 nm, it is helpful to reduce the shielding of the fifth insulating layer 16 on the evaporated material, so that more evaporated material can pass through the opening formed by the fifth insulating layer 16, thereby increasing the area of ​​the organic light-emitting layer 18 evaporated onto the substrate 10 by the evaporated material, making the coverage area of ​​the organic light-emitting layer 18 closer to the designed regional pattern, thereby improving the evaporation accuracy of the organic light-emitting layer 18.

[0133] At the same time, the thickness of the fifth insulating layer 16 is less than or equal to 100 nm, which will not increase the thickness of the organic light-emitting display device too much, which is conducive to realizing a lightweight design of the organic light-emitting display device. In addition, a thinner fifth insulating layer 16 means that less material is used in the manufacturing process, which helps to reduce costs.

[0134] Furthermore, by setting the thickness of the fifth insulating layer 16 to be greater than or equal to 10 nm, the structural strength of the fifth insulating layer 16 can be ensured, thereby reducing the risk of edge damage or shape change of the fifth insulating layer 16, helping to maintain the stability of the size and position of the shielding area formed by the fifth insulating layer 16, ensuring that the organic light-emitting layer 18 can be accurately deposited at a preset position, thereby improving the accuracy and reliability of the manufacturing process.

[0135] Continue to refer Figure 3 and Fig.12 Optionally, the thickness of the fourth insulating layer 15 is 10 nm to 100 nm.

[0136] Among them, by setting the thickness of the fourth insulating layer 15 to be greater than or equal to 10nm, a sufficient height difference can be made between the bottom surface of the fifth insulating layer 16 and the top surface of the third insulating layer 14, thereby helping to at least partially disconnect the organic light-emitting layer 18 deposited on the upper surface of the fifth insulating layer 16 and the organic light-emitting layer 18 deposited on the upper surface of the third insulating layer 14, thereby preventing crosstalk between adjacent pixels.

[0137] At the same time, setting the thickness of the fourth insulating layer 15 to be less than or equal to 100 nm will not excessively increase the distance between the fifth insulating layer 16 and the substrate 10, which is beneficial to reducing the shadow effect during the evaporation process, reducing the deviation between the pattern size of the actual evaporated organic light-emitting layer 18 and the design value, and improving the accuracy of the evaporation process.

[0138] Continue to refer Figure 3 and Fig.12 Optionally, an edge of the third insulating layer 14 exceeds an edge of the fourth insulating layer 15 .

[0139] Among them, Figure 3 and Fig.12 As shown, the length of the third insulating layer 14 in the lateral direction may be greater than the length of the fourth insulating layer 15 in the lateral direction, or in other words, the projection area of ​​the third insulating layer 14 on the substrate 10 is greater than the projection area of ​​the fourth insulating layer 15 on the substrate 10 .

[0140] With such a configuration, when preparing the first carrier adjustment layer 181 , the first carrier adjustment layer 181 will be raised at the edge of the third insulating layer 14 , which can extend the transmission path length of the current on the first carrier adjustment layer 181 , which is beneficial to reduce the leakage current between adjacent pixel regions 101 .

[0141] Continue to refer Figure 3 and Fig.12 Optionally, a second angle θ2 is formed between the bottom surface of the third insulating layer 14 and the side surface of the third insulating layer 14 , and the second angle θ2 is in the range of 20° to 60°.

[0142] Specifically, Figure 3 and Fig.12 As shown, the top surface of the fifth insulating layer 16 refers to the surface of the fifth insulating layer 16 away from the substrate 10 , and the bottom surface of the fifth insulating layer 16 refers to the surface of the fifth insulating layer 16 close to the substrate 10 .

[0143] In this embodiment, the second angle θ2 between the bottom surface of the third insulating layer 14 and the side surface of the third insulating layer 14 is set to be less than or equal to 60°. At this time, a relatively smooth transition area is formed on the side surface of the third insulating layer 14, so that the organic light-emitting layer 18 is easier to adhere to the side surface of the third insulating layer 14 during deposition, which is beneficial to reduce defects of the organic light-emitting layer 18 at the side surface of the third insulating layer 14, improve the uniformity of the organic light-emitting layer 18, and ensure that its thickness and performance are consistent throughout the pixel area 101.

[0144] Furthermore, the top surface width of the third insulating layer 14 is a design value predetermined according to specific needs. The smaller the second angle θ2 between the bottom surface of the third insulating layer 14 and the side surface of the third insulating layer 14, the larger the bottom surface width of the third insulating layer 14 will be, and the larger the overall width of the third insulating layer 14 will be, thereby reducing the portion actually used for luminescence in the pixel area 101, affecting the overall brightness and energy efficiency of the display device.

[0145] In this embodiment, the second angle θ2 between the bottom surface of the third insulating layer 14 and the side surface of the third insulating layer 14 is set to be greater than or equal to 20°, which can avoid the second angle θ2 being too small and causing the overall width of the third insulating layer 14 to be too large, thereby ensuring that the overall width of the third insulating layer 14 is small, increasing the area within the pixel region 101 that can effectively emit light, and improving the overall brightness and energy efficiency of the display device.

[0146] Fig.15 A partial cross-sectional structural diagram of another organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig.15 As shown, optionally, the third insulating layer 14 includes a first insulating sub-portion 141 located on the second insulating layer 13 and a second insulating sub-portion 142 located on the first insulating sub-portion 141. A third angle θ3 is formed between the side surface of the first insulating sub-portion 141 and the bottom surface of the third insulating layer 14, and a fourth angle θ4 is formed between the side surface of the second insulating sub-portion 142 and the bottom surface of the third insulating layer 14, and the fourth angle θ4 is greater than the third angle θ3.

[0147] Specifically, Fig.15 As shown, the third insulating layer 14 includes two stacked film layers, namely a first insulating sub-portion 141 and a second insulating sub-portion 142 . The first insulating sub-portion 141 is located between the second insulating layer 13 and the second insulating sub-portion 142 .

[0148] The top surface of the first insulating section 141 refers to the surface of the first insulating section 141 away from the substrate 10, and the bottom surface of the first insulating section 141 refers to the surface of the first insulating section 141 close to the substrate 10. The top surface of the second insulating section 142 refers to the surface of the first insulating section 141 away from the substrate 10, and the bottom surface of the second insulating section 142 refers to the surface of the first insulating section 141 close to the substrate 10.

[0149] In this embodiment, a third angle θ3 between the side surface of the first insulating portion 141 and the bottom surface of the third insulating layer 14 is different from a fourth angle θ4 between the side surface of the second insulating portion 142 and the bottom surface of the third insulating layer 14 .

[0150] Among them, the third angle θ3 between the side surface of the first insulating section 141 and the bottom surface of the third insulating layer 14 is small, so as to form a smoother transition area on the side surface of the first insulating section 141, so that the organic light-emitting layer 18 is easier to adhere to the side surface of the first insulating section 141 during deposition, and is thus gently lifted through the edge of the first insulating section 141.

[0151] At the same time, the fourth angle θ4 between the side surface of the second insulating section 142 and the bottom surface of the third insulating layer 14 is relatively large, which can gradually increase the lifting amplitude of the organic light-emitting layer 18, thereby ensuring the film quality of the organic light-emitting layer 18 while extending the transmission path length of the current on the first carrier adjustment layer 181 in the organic light-emitting layer 18, thereby reducing the leakage current between adjacent pixel areas 101.

[0152] In addition, at the edge of the second insulating section 142, the larger fourth angle θ4 can pre-thin or even cut off part of the film layer in the organic light-emitting layer 18, thereby reducing the continuity of the organic light-emitting layer 18 in this area, helping to reduce the leakage current between adjacent pixel areas 101 and improve the electrical isolation effect between adjacent pixel areas.

[0153] It should be noted that the first insulating division 141 and the second insulating division 142 can be two parts of the same film layer. In this way, only one deposition process is needed to complete the preparation of the third insulating layer 14, reducing the process steps and manufacturing flow, thereby improving production efficiency and shortening the production cycle; at the same time, it is also beneficial to improve the material consistency of the first insulating division 141 and the second insulating division 142 and the uniformity of the film layer.

[0154] Among them, the third angle θ3 between the side of the first insulating section 141 and the bottom of the third insulating layer 14 can be different from the fourth angle θ4 between the side of the second insulating section 142 and the bottom of the third insulating layer 14 by setting etching parameters, and the embodiment of the present invention does not make specific limitations on this.

[0155] In other embodiments, the first insulating section 141 and the second insulating section 142 may also be different film layers. In this way, the materials and etching parameters of the first insulating section 141 and the second insulating section 142 can be independently controlled, making the material selection and process parameter setting of the first insulating section 141 and the second insulating section 142 more flexible. The embodiments of the present invention do not specifically limit this.

[0156] Continue to refer Fig.15 Optionally, the third angle θ3 is in the range of 20° to 60°, and the fourth angle θ4 is in the range of 60° to 90°.

[0157] Among them, Fig.15 As shown, a third angle θ3 between the side surface of the first insulating portion 141 and the bottom surface of the third insulating layer 14 is set to be less than or equal to 60°, so as to form a smoother transition area on the side surface of the first insulating portion 141, so that the organic light-emitting layer 18 is easier to adhere to the side surface of the first insulating portion 141 during deposition, which is beneficial to reducing defects of the organic light-emitting layer 18 at the side surface of the first insulating portion 141.

[0158] At the same time, the top surface width of the third insulating layer 14 is a design value predetermined according to specific needs. The third angle θ3 between the side surface of the first insulating section 141 and the bottom surface of the third insulating layer 14 is set to be greater than or equal to 20°. This can avoid the third angle θ3 being too small and causing the overall width of the first insulating section 141 to be too large, thereby ensuring that the overall width of the third insulating layer 14 is small, increasing the area within the pixel region 101 that can effectively emit light, and improving the overall brightness and energy efficiency of the display device.

[0159] Furthermore, a fourth angle θ4 between the side surface of the second insulating section 142 and the bottom surface of the third insulating layer 14 is set to be greater than or equal to 60°, so that the fourth angle θ4 between the side surface of the second insulating section 142 and the bottom surface of the third insulating layer 14 can be greater than the third angle θ3 between the side surface of the first insulating section 141 and the bottom surface of the third insulating layer 14, thereby gradually increasing the elevation amplitude of the organic light-emitting layer 18, while ensuring the film quality of the organic light-emitting layer 18, extending the transmission path length of the current on the first carrier adjustment layer 181 in the organic light-emitting layer 18, and reducing the leakage current between adjacent pixel areas 101.

[0160] At the same time, at the edge of the second insulating section 142, the larger fourth angle θ4 can pre-thin or even cut off part of the film layer in the organic light-emitting layer 18, thereby reducing the continuity of the organic light-emitting layer 18 in this area, helping to reduce the leakage current between adjacent pixel areas 101 and improve the electrical isolation effect between adjacent pixel areas.

[0161] Furthermore, a fourth angle θ4 between the side surface of the second insulating portion 142 and the bottom surface of the third insulating layer 14 is set to be less than or equal to 90°, so that the organic light-emitting layer 18 is easier to adhere to the side surface of the second insulating portion 142 during deposition, which is beneficial to reducing defects of the organic light-emitting layer 18 at the side surface of the second insulating portion 142; at the same time, it can also reduce the difficulty of the preparation process of the second insulating portion 142 and facilitate implementation.

[0162] Continue to refer Fig.15 Optionally, the thickness of the second insulating portion 142 is greater than or equal to 10 nm.

[0163] Among them, by setting the thickness of the second insulating portion 142 to be greater than or equal to 10 nm, the elevation amplitude of the organic light-emitting layer 18 can be effectively increased, thereby facilitating the extension of the current transmission path length on the first carrier adjustment layer 181 in the organic light-emitting layer 18 and reducing the leakage current between adjacent pixel regions 101.

[0164] Continue to refer Figure 3 Optionally, the top surface of the first insulating layer 12 is flush with the top surface of at least one anode 11 .

[0165] Alternatively, the top surface of the first insulating layer 12 is higher than the top surface of the anode 11 .

[0166] Alternatively, the top surface of the first insulating layer 12 is lower than the top surface of the anode 11 .

[0167] The top surface of the first insulating layer 12 refers to the surface of the first insulating layer 12 away from the substrate 10 , and the top surface of the anode 11 refers to the surface of the anode 11 away from the substrate 10 .

[0168] like Figure 3 As shown, the top surface of the first insulating layer 12 is set flush with the top surface of at least one anode 11, that is, the top surface of the first insulating layer 12 and the top surface of at least one anode 11 are located on the same horizontal plane. At this time, the top surface height of the first insulating layer 12 is the same as the top surface height of the anode 11, so that the first insulating layer 12 can fill the pits formed between two different anodes 11, so that the subsequent film layer can be prepared on a relatively flat surface, thereby ensuring the continuity of the subsequent film layer.

[0169] Fig.16 A partial cross-sectional structural diagram of another organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig.16As shown, optionally, the top surface of the first insulating layer 12 is higher than the top surface of the anode 11, that is, the difference between the top surface height of the first insulating layer 12 and the top surface height of the anode 11 is a positive value. With such a configuration, when preparing the first carrier adjustment layer 181, the first carrier adjustment layer 181 will be sequentially raised by the first insulating layer 12, the second insulating layer 13 and the third insulating layer 14, thereby increasing the distance between the cathode 19 and the anode 11, avoiding the formation of a higher brightness at the edge of the pixel, and at the same time extending the transmission path length of the current on the first carrier adjustment layer 181, which is beneficial to reducing the leakage current between adjacent pixel areas 101.

[0170] Fig.17 A partial cross-sectional structural diagram of another organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig.17 As shown, optionally, when the interval between adjacent anodes 11 is large, the top surface of the first insulating layer 12 can be set lower than the top surface of the anode 11, that is, the difference between the top surface height of the first insulating layer 12 and the top surface height of the anode 11 is a negative value, which can reduce the material usage and help reduce manufacturing costs.

[0171] Continue to refer Figure 3 , Fig.16 and Fig.17 Optionally, the anode 11 includes a reflective anode layer 111 and a transparent anode layer 112, which are stacked, and the transparent anode layer 112 is located on the reflective anode layer 111. The top surface of the first insulating layer 12 is flush with the top surface of the reflective anode layer 111. Alternatively, the top surface of the first insulating layer 12 is higher than the top surface of the reflective anode layer 111.

[0172] Specifically, Figure 3 , Fig.16 and Fig.17 As shown, the reflective anode layer 111 is disposed in the pixel region 101 , and the reflective anode layer 111 may be made of a metal material with high conductivity (such as silver, copper, etc.), thereby reducing the resistance of the anode 11 and improving the current transmission efficiency.

[0173] Furthermore, the thickness of the reflective electrode 14 in each pixel region 101 may be the same, thereby simplifying the manufacturing process and improving production efficiency.

[0174] Continue to refer Figure 3 , Fig.16 and Fig.17 A transparent anode layer 112 is also provided on the reflective anode layer 111 of the pixel area 101. The transparent anode layer 112 is used to form a microcavity effect. By providing transparent anode layers 112 of different thicknesses in the pixel area 101 displaying different colors, the length of the microcavity can be adjusted to enhance the light of the displayed color, thereby improving the luminous efficiency of the corresponding color light, and facilitating improving the color purity.

[0175] Fig.18 A schematic flow chart of another method for manufacturing an organic light emitting display device provided by an embodiment of the present invention is shown as follows: Fig.17 and Fig.18 As shown, optionally, the top surface of the first insulating layer 12 is flush with the top surface of the reflective anode layer 111, that is, the top surface of the first insulating layer 12 and the top surface of the reflective anode layer 111 are located on the same horizontal plane. In this case, the top surface height of the first insulating layer 12 is the same as the top surface height of the reflective anode layer 111. The top surface of the first insulating layer 12 refers to the surface of the first insulating layer 12 away from the substrate 10, and the top surface of the reflective anode layer 111 refers to the surface of the reflective anode layer 111 away from the substrate 10.

[0176] In this way, when preparing an organic light-emitting display device, Fig.18 As shown in (a), a first insulating material layer 120 may be deposited on the reflective anode layer 111. Fig.18 As shown in (b), the first insulating material layer 120 can be etched by a chemical mechanical polishing (CMP) process to grind off the first insulating material layer 120 on the reflective anode layer 111, retain the first insulating material layers 120 of two adjacent reflective anode layers 111, and form a first insulating layer 12. While achieving the top surface of the first insulating layer 12 and the top surface of the reflective anode layer 111 to be flush, the top surface of the first insulating layer 12 and the top surface of the reflective anode layer 111 can also form a flat and smooth surface, so that subsequent film layers can be prepared on a relatively flat surface, thereby ensuring the film formation quality of subsequent film layers.

[0177] It should be noted that the main working principle of the chemical mechanical polishing process is that under a certain pressure and in the presence of a polishing liquid, the film layer being polished moves relative to the polishing pad, and the thickness of the film layer being polished is thinned by means of a highly organic combination of the mechanical grinding effect of nano-abrasives and the chemical action of various chemical reagents. The surface of the film layer being polished can be made to meet the requirements of high flatness, low surface roughness and low defects. The use of this process to form the first insulating layer 12 does not require the additional setting of a mask plate, thereby reducing manufacturing costs, simplifying the process flow, and improving production efficiency.

[0178] Continue to refer Figure 3 and Fig.16 Optionally, the top surface of the first insulating layer 12 is higher than the top surface of the reflective anode layer 111, that is, the difference between the top surface height of the first insulating layer 12 and the top surface height of the reflective anode layer 111 is a positive value. Such a setting is conducive to reducing the height difference between the area where the anode 11 is located and the area between adjacent anodes 11, so that subsequent film layers can be prepared on a relatively flat surface, thereby improving the film formation quality of subsequent film layers.

[0179] Fig.19 A partial cross-sectional structural diagram of another organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig.19 As shown, optionally, the anode 11 includes a reflective anode layer 111 and a transparent anode layer 112 which are stacked, and the transparent anode layer 112 is located on the upper layer of the reflective anode layer 111. The anode 11 includes a first anode 11A, a second anode 11B, and a third anode 11C. The light-emitting colors of the organic light-emitting layer 18 in the pixel area 101 where the first anode 11A, the second anode 11B, and the third anode 11C are located are different. The thickness of the transparent anode layer 112 in the first anode 11A is less than the thickness of the transparent anode layer 112 in the second anode 11B, and the thickness of the transparent anode layer 112 in the second anode 11B is less than the thickness of the transparent anode layer 112 in the third anode 11C. The top surface of the first insulating layer 12 is flush with the top surface of the first anode 11A.

[0180] The configuration of the reflective anode layer 111 and the transparent anode layer 112 may refer to any of the above embodiments, which will not be described in detail here.

[0181] In this embodiment, the anode 11 includes a first anode 11A, a second anode 11B and a third anode 11C located in different pixel regions 101 .

[0182] like Fig.19 As shown, optionally, the pixel area 101 may include a red pixel area 101R, a green pixel area 101G and a blue pixel area 101B. It can be understood that the luminous color of the red pixel area 101R is red, the luminous color of the green pixel area 101G is green, and the luminous color of the blue pixel area 101B is blue. Then the first anode 11A, the second anode 11B and the third anode 11C can be the anodes 11 located in the blue pixel area 101B, the green pixel area 101G and the red pixel area 101R, respectively.

[0183] The longer the cavity length of the microcavity formed by the transparent anode layer 112 is, the longer the wavelength of the output light is.

[0184] In this embodiment, if Fig.19As shown, taking the first anode 11A located in the blue pixel region 101B, the second anode 11B located in the green pixel region 101G, and the third anode 11C located in the red pixel region 101R as an example, the transparent anode layer 112 in the first anode 11A can be set to have a smaller thickness so that the cavity length of the microcavity is shorter, so as to enhance the output efficiency of blue light, thereby improving the displayed color purity of blue light; the transparent anode layer 112 in the second anode 11B has a moderate thickness, so that the cavity length of the microcavity is moderate, so as to enhance the output efficiency of green light, thereby improving the displayed color purity of green light; the transparent anode layer 112 in the third anode 11C has a larger thickness, so that the cavity length of the microcavity is longer, so as to enhance the output efficiency of red light, thereby improving the displayed color purity of red light.

[0185] Furthermore, if Fig.19 As shown, the top surface of the first insulating layer 12 is flush with the top surface of the first anode 11A, that is, the top surface of the first insulating layer 12 is flush with the top surface of the anode 11 with the smallest top surface height. On the one hand, the height difference between the area where the anode 11 is located and the area between adjacent anodes 11 is reduced, so that subsequent film layers can be prepared on a relatively flat surface, thereby improving the film formation quality of subsequent film layers; on the other hand, in the process of etching the first insulating material layer to form the first insulating layer 12, the first insulating layer 12 can be exposed to the anodes 11 of all pixel areas 101 through a single etching process, without the need to perform additional etching steps on the first insulating material layer through a mask process, thereby simplifying the manufacturing process and improving production efficiency.

[0186] Fig. 20 A partial cross-sectional structural diagram of another organic light emitting display device provided by an embodiment of the present invention is shown. Fig.21 A partial cross-sectional structural diagram of another organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig. 20 and Fig.21 As shown, optionally, in the case where the top surface of the first insulating layer 12 is higher than the top surface of the anode 11 (eg Fig. 20 Alternatively, when the top surface of the first insulating layer 12 is lower than the top surface of the anode 11 (as shown in Fig.21 As shown), a transparent anode layer 112 with different thicknesses may also be provided in the pixel region 101 displaying different colors, so that the light of the displayed color may be enhanced by adjusting the length of the microcavity to improve the color purity, which is not specifically limited in the embodiment of the present invention.

[0187] Continue to refer Figure 3 Optionally, a distance L0 from an edge of the top surface of the third insulating layer 14 to an edge of the top surface of the anode 11 is greater than or equal to 0.

[0188] The top surface of the third insulating layer 14 refers to the surface of the third insulating layer 14 away from the substrate 10 , and the top surface of the anode 11 refers to the surface of the anode 11 away from the substrate 10 .

[0189] like Figure 3 As shown, on the side of the edge of the fifth insulating layer 16 close to the anode 11, the first carrier adjustment layer 181 has not been cut off by the fifth insulating layer 16. Therefore, the leakage current transmitted on the first carrier adjustment layer 181 will flow to the cathode 19 through the light-emitting material layer 182 located above the third insulating layer 14, causing stray light to form at the corners of the pixel.

[0190] In this embodiment, if Figure 3 As shown, in a direction parallel to the plane where the substrate 10 is located, by setting the distance L0 from the edge of the top surface of the third insulating layer 14 to the edge of the top surface of the anode 11 to be greater than or equal to 0, the stray light formed by the organic light-emitting layer 18 above the third insulating layer 14 can be located in the gap area between two adjacent anodes 11, and the distance between this area and the reflective anode layer 111 is farther, thereby reducing the reflection of the stray light, which is beneficial to weakening the output intensity of the stray light, thereby reducing the influence of the stray light on the display effect.

[0191] Meanwhile, the distance L0 from the edge of the top surface of the third insulating layer 14 to the edge of the top surface of the anode 11 is greater than or equal to 0, which can also reduce the influence of the third insulating layer 14 on the microcavity length, thereby facilitating the improvement of the displayed color purity.

[0192] Optionally, the organic light emitting display device is a silicon-based micro organic light emitting display device (Silicon-based Micro-OLED Display).

[0193] Among them, the silicon-based micro-organic light-emitting display device combines the silicon-based integrated circuit (CMOS) process and the organic light-emitting diode (OLED) technology to integrate the OLED pixel array directly onto the silicon wafer to form a micro-display.

[0194] Silicon-based micro-organic light-emitting display devices are small, light, low power consumption, high brightness, fast response speed and wide viewing angle. They are suitable for use in near-eye display devices such as virtual reality (VR), augmented reality (AR) headsets, head-up display (HUD) systems, micro-projectors and other portable electronic products with strict requirements on size, weight and energy consumption.

[0195] In an embodiment of the present invention, the substrate 10 may be a silicon-based driving backplane, and a corresponding organic light-emitting layer 18 may be formed in each pixel area 101 on the substrate 10 through an etching process (e.g., a photolithography process including exposure and development steps), and the process error may be controlled at about ±2 μm. Compared with the use of a traditional fine metal mask (Fine Metal Mask, FMM) to form the organic light-emitting layer 18, a smaller pixel size and a higher resolution may be achieved, and the manufacturing cost may be lower.

[0196] Based on the same inventive concept, an embodiment of the present invention further provides a method for manufacturing an organic light-emitting display device, which is used to prepare any organic light-emitting display device provided by the above embodiments. The explanation of structures and terms that are the same or corresponding to the above embodiments will not be repeated here.

[0197] Fig. 22 A schematic diagram of a method for manufacturing an organic light emitting display device according to an embodiment of the present invention is provided. Figure 23-Figure 33 A schematic diagram of a process for manufacturing another organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Figure 22-Figure 33 As shown, the manufacturing method includes:

[0198] S101, providing a substrate, wherein the substrate includes a plurality of pixel regions arranged at intervals.

[0199] Specifically, Fig.23 As shown, the substrate 10 may be a driving substrate, and a plurality of pixel regions 101 arranged in an array are defined on the substrate 10. In the direction of rows or columns, adjacent pixel regions are pixels emitting light of different colors.

[0200] For example, Fig.23 As shown, in the row direction, the pixel region 101 can be divided into a red pixel region 101R, a green pixel region 101G and a blue pixel region 101B, but it is not limited thereto. In some embodiments, the pixel region 101 can further include white or other color pixel regions.

[0201] Continue to refer Figure 4 Optionally, the substrate 10 includes a substrate 31, on which a driving transistor T corresponding to the pixel area 101 is disposed, and the driving transistor T is connected to the anode 11. The driving transistor T can provide a working signal corresponding to the luminous brightness to the pixel through the anode 11 to drive the pixel to emit light.

[0202] The driving transistor T may include an active region T1 , a gate T2 , and a source-drain electrode layer T3 that are stacked. The active region T1 may be formed in the substrate 31 , but is not limited thereto.

[0203] S102, forming an anode in the pixel area.

[0204] Specifically, Fig.24 As shown, an anode 11 is formed in a pixel area 101 on a substrate 10, and the anodes 11 corresponding to each pixel area 101 are arranged in an electrically isolated manner. The anode 11, as an electrode of the pixel, can inject carriers (such as holes) into the pixel under the drive of a positive voltage of an external power supply.

[0205] Optional, such as Fig.24 As shown, the anode 11 includes a reflective anode layer 111 and a transparent anode layer 112 which are stacked, and the transparent anode layer 112 is located on the upper layer of the reflective anode layer 111. The transparent anode layer 112 with different thicknesses is arranged in the pixel area 101 displaying different colors. The length of the microcavity can be adjusted to enhance the light of the displayed color, improve the luminous efficiency of the corresponding color light, and help improve the color purity, but it is not limited to this.

[0206] S103, forming a first insulating material layer on the anode.

[0207] Specifically, Fig.25 As shown, a first insulating material layer 120 is deposited on the anode 11 in its entirety.

[0208] Among them, the material of the first insulating material layer 120 may include at least one of silicon oxide (SiO) and silicon nitride (SiN). Both silicon oxide and silicon nitride have high resistivity and can play a good insulating role between adjacent anodes 11. At the same time, silicon oxide and silicon nitride also have strong chemical stability and excellent high-temperature stability. They are not easily corroded by moisture, oxygen and other harmful gases in the environment. They can maintain good insulation properties in high-temperature environments, which is beneficial to extending the service life of the device.

[0209] S104 , etching the first insulating material layer to form a first insulating layer, wherein the first insulating layer is located between adjacent pixel regions.

[0210] Specifically, Fig.26As shown, the first insulating material layer 120 can be etched by a photolithography process or a chemical mechanical polishing (CMP) process to remove the first insulating material layer 120 on the reflective anode layer 111, and retain the first insulating material layer 120 of two adjacent reflective anode layers 111 to form a first insulating layer 12 between two adjacent pixel regions 101. The first insulating layer 12 helps to ensure electrical insulation between two adjacent anodes 11. At the same time, since the anode 11 has a certain thickness, a pit is formed between the two anodes 11. Filling the first insulating layer 12 between the two adjacent anodes 11 is also beneficial to reducing the height difference between the area where the anode 11 is located and the area where the pit is located, so that subsequent film layers can be prepared on a relatively flat surface, thereby ensuring the continuity of subsequent film layers.

[0211] S105 , forming a second insulating material layer on the first insulating layer.

[0212] Specifically, Fig. 27 As shown, a second insulating material layer 130 is deposited entirely on the first insulating layer 12 .

[0213] S106 , forming a third insulating material layer on the second insulating material layer, wherein the material of the second insulating material layer is different from that of the third insulating material layer.

[0214] Specifically, Fig.28 As shown, a third insulating material layer 140 is deposited entirely on the second insulating material layer 130 .

[0215] Optionally, the material of the third insulating material layer 140 includes at least one of silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON) and amorphous silicon (a-Si).

[0216] Among them, silicon nitride (SiN), silicon oxide (SiO), and silicon oxynitride (SiON) have high resistivity and can play a good insulating role for the first carrier adjustment layer 181 located on the upper surface of the third insulating layer 14. At the same time, silicon nitride (SiN), silicon oxide (SiO), and silicon oxynitride (SiON) also have good chemical stability and thermal stability, and can maintain good insulation performance in a high temperature environment, which is beneficial to prolonging the service life of the device. Amorphous silicon (a-Si) can be deposited by a variety of deposition methods (such as plasma enhanced chemical vapor deposition (Plasma-Enhanced Chemical Vapor Deposition, PECVD)), has good process compatibility, and has good mechanical stability, can provide good structural support, and is beneficial to ensure the stability of the structure in subsequent process.

[0217] S107 . Form a fourth insulating material layer on the third insulating material layer.

[0218] Specifically, Fig.29 As shown, a whole fourth insulating material layer 150 is deposited on the third insulating material layer 140 .

[0219] Optionally, the material of the fourth insulating material layer 150 includes at least one of silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON) and amorphous silicon (a-Si), but is not limited thereto.

[0220] S108 , forming a fifth insulating material layer on the fourth insulating material layer.

[0221] Specifically, Fig.30 As shown, a fifth insulating material layer 160 is deposited entirely on the fourth insulating material layer 150 .

[0222] Optionally, the material of the fifth insulating material layer 160 includes at least one of silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON) and amorphous silicon (a-Si), but is not limited thereto.

[0223] S109 , etching the third insulating material layer, the fourth insulating material layer and the fifth insulating material layer to form a third insulating layer, a fourth insulating layer and a fifth insulating layer.

[0224] Specifically, Fig.31 As shown, the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160 can be etched by a photolithography process or a dry etching process to form a third insulating layer 14, a fourth insulating layer 15 and a fifth insulating layer 16 located between adjacent pixel regions 101. The third insulating layer 14, the fourth insulating layer 15 and the fifth insulating layer 16 are all arranged around the pixel region 101, and the defined region can be any shape such as a rectangle, a polygon or a circle, which is not specifically limited in the embodiment of the present invention.

[0225] Among them, by etching the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160 in the same etching process to form the third insulating layer 14, the fourth insulating layer 15 and the fifth insulating layer 16, the process cycle can be shortened and the manufacturing cost can be reduced.

[0226] Furthermore, the material of the second insulating material layer 130 is different from that of the third insulating material layer 140. In the process of etching the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160, the second insulating material layer 130 can protect the first insulating layer 12 thereunder due to its different materials, thereby protecting the first insulating layer 12 from etching damage, thereby improving the quality and flatness of subsequent film layers (such as organic light-emitting layers) deposited on the first insulating layer 12, and improving the luminous efficiency and uniformity.

[0227] S110 , etching the sidewall of the fourth insulating layer so that an edge of the fifth insulating layer exceeds an edge of the fourth insulating layer.

[0228] Specifically, Fig.32 As shown, the side wall of the fourth insulating layer 15 is etched, wherein a suitable etching gas or liquid can be selected for the fourth insulating layer 15 so that the etching speed of the fourth insulating layer 15 is much greater than the etching speed of the third insulating layer 14 and the fifth insulating layer 16, so that the side wall of the fourth insulating layer 15 is preferentially etched, and the side wall of the fourth insulating layer 15 is recessed inward, so that the edge of the fifth insulating layer 16 exceeds the edge of the fourth insulating layer 15. At this time, the edge portion of the fifth insulating layer 16 forms an eaves structure above the edge of the fourth insulating layer 15.

[0229] S111 , etching the second insulating material layer 130 to form a second insulating layer 13 .

[0230] Specifically, Fig.33 As shown, the second insulating material layer 130 can be etched by a photolithography process or a dry etching process to form a second insulating layer 13 located between adjacent pixel regions 101, wherein the second insulating layer 13 is arranged around the pixel region 101, and the defined region can be any shape such as a rectangle, a polygon or a circle, and the embodiment of the present invention does not make any specific limitation on this.

[0231] In the method for manufacturing an organic light-emitting display device provided by an embodiment of the present invention, a second insulating material layer is arranged on the upper layer of the first insulating layer and between the third insulating layer, and the material of the second insulating material layer is different from the materials of the third insulating material layer, the fourth insulating material layer and the fifth insulating material layer on the upper layer. In the process of etching the third insulating material layer, the fourth insulating material layer and the fifth insulating material layer to form the third insulating layer, the fourth insulating layer and the fifth insulating layer, the second insulating material layer is used to block the etching, so that the first insulating layer is protected from etching damage, the quality and flatness of subsequent film layers (such as organic light-emitting layers) deposited on the first insulating layer are improved, and the luminous efficiency and uniformity are improved.

[0232] Optionally, etching the second insulating material layer includes:

[0233] The second insulating material layer is etched using the third insulating layer as a mask.

[0234] Specifically, Fig.10 As shown, in the process of etching the second insulating material layer 130 to form the second insulating layer 13, the third insulating layer 14 can be directly used as a mask to etch the second insulating material layer 130, without the need to set up an additional mask, thereby reducing manufacturing costs, simplifying the process flow, and improving production efficiency. At the same time, by using the third insulating layer 14 as a mask, higher etching accuracy can be provided to ensure that the edge of the second insulating layer 13 is aligned with the edge of the third insulating layer 14, thereby reducing problems such as interlayer misalignment caused by process errors caused by additional mask steps.

[0235] Optionally, the material of the second insulating material layer is different from the material of the first insulating layer.

[0236] Specifically, Figure 8 As shown in (d), after forming the third insulating layer 14, the fourth insulating layer 15 and the fifth insulating layer 16, the second insulating material layer 130 is etched to remove the second insulating material layer 130 above the anode 11, and form the second insulating layer 13. Wherein, the material of the second insulating material layer 130 is different from that of the first insulating layer 12. In the process of etching the second insulating material layer 130, an etchant with high selectivity to the material of the second insulating material layer 130 can be selected, so as to reduce damage to the first insulating layer 12 when etching the second insulating material layer 130.

[0237] Optionally, the thickness of the second insulating material layer is 5 nm to 50 nm.

[0238] Among them, Figure 8 As shown, the thickness of the second insulating material layer 130 is greater than or equal to 5 nm. At this time, the second insulating material layer 130 has a sufficient thickness. Then, during the process of etching the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160, it can be ensured that the second insulating material layer 130 will not be completely removed during the etching process, thereby being able to provide sufficient protection for the first insulating layer 12.

[0239] Furthermore, the thickness of the second insulating material layer 130 is less than or equal to 50 nm. At this time, the thickness of the second insulating material layer 130 is not too thick. Therefore, in the process of etching the second insulating material layer 130 to form the second insulating layer 13, the etching will not be difficult or the process complexity will not be increased due to the second insulating material layer 130 being too thick.

[0240] Optionally, the material of the second insulating material layer includes at least one of aluminum oxide (Al2O3), titanium oxide (TiO2), zirconium oxide (ZrO2) or hafnium oxide (HfO2).

[0241] The second insulating material layer 130 is made of a material different from that of the third insulating layer 14 and the first insulating layer 12 to achieve etching selectivity.

[0242] like Figure 8 As shown, in the process of etching the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160, an etchant with high selectivity to the materials of the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160 can be selected. Then, in the etching process, the second insulating material layer 130 can protect the first insulating layer 12 thereunder, reduce damage to the first insulating layer 12, and thus protect the integrity of the structure of the first insulating layer 12.

[0243] At the same time, aluminum oxide (Al2O3), titanium oxide (TiO2), zirconium oxide (ZrO2) and hafnium oxide (HfO2) have good chemical stability and mechanical strength, which are beneficial for resisting erosion from the external environment and extending the service life of the device.

[0244] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0245] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. An organic light emitting display device, characterized in that: include: A substrate, the substrate comprising a plurality of pixel regions arranged at intervals; an anode disposed in the pixel region; A first insulating layer filled between the pixel regions; a second insulating layer disposed on the first insulating layer; a third insulating layer disposed on the second insulating layer, wherein the material of the second insulating layer is different from that of the third insulating layer; a fourth insulating layer disposed on the third insulating layer; A fifth insulating layer is disposed on the fourth insulating layer, and an edge of the fifth insulating layer exceeds an edge of the fourth insulating layer.

2. The organic light emitting display device according to claim 1, characterized in that: The material of the second insulating layer is different from that of the first insulating layer.

3. The organic light emitting display device according to claim 1, wherein: The thickness of the second insulating layer is 5 nm to 50 nm.

4. The organic light emitting display device according to claim 1, wherein: The material of the second insulating layer includes at least one of aluminum oxide, titanium oxide, zirconium oxide or hafnium oxide.

5. The organic light emitting display device according to claim 1, wherein: A vertical projection of the second insulating layer on the substrate covers a vertical projection of the third insulating layer on the substrate.

6. The organic light emitting display device according to claim 5, characterized in that: A vertical projection of the second insulating layer on the substrate coincides with a vertical projection of the third insulating layer on the substrate.

7. The organic light emitting display device according to claim 1, wherein: The pixel region also includes an organic light-emitting layer disposed on the anode, and the organic light-emitting layer includes an organic light-emitting layer that emits light of multiple colors. In the direction of rows or columns, the light-emitting colors of the organic light-emitting layers in adjacent pixel regions are different.

8. The organic light emitting display device according to claim 1, wherein: A first angle is formed between the bottom surface of the fifth insulating layer and the side surface of the fifth insulating layer, and the first angle ranges from 20° to 60°.

9. The organic light emitting display device according to claim 1, wherein: The thickness of the fifth insulating layer is 10 nm to 100 nm.

10. The organic light emitting display device according to claim 1, wherein: The thickness of the fourth insulating layer is 10 nm to 100 nm.

11. The organic light emitting display device according to claim 1, wherein: An edge of the third insulating layer exceeds an edge of the fourth insulating layer.

12. The organic light emitting display device according to claim 1, wherein: A second angle is formed between the bottom surface of the third insulating layer and the side surface of the third insulating layer, and the second angle ranges from 20° to 60°.

13. The organic light emitting display device according to claim 1, wherein: The third insulating layer comprises a first insulating sub-section located on the second insulating layer and a second insulating sub-section located on the first insulating sub-section; A third angle is formed between the side surface of the first insulating section and the bottom surface of the third insulating layer; A fourth angle is formed between the side surface of the second insulating section and the bottom surface of the third insulating layer; The fourth angle is greater than the third angle.

14. The organic light emitting display device according to claim 13, wherein: The third angle ranges from 20° to 60°; The fourth angle ranges from 60° to 90°.

15. The organic light emitting display device according to claim 13, characterized in that: The thickness of the second insulating portion is greater than or equal to 10 nm.

16. The organic light emitting display device according to claim 1, wherein: The material of the fifth insulating layer includes at least one of silicon nitride, silicon oxide, silicon oxynitride or amorphous silicon; and / or, The material of the fourth insulating layer includes at least one of silicon nitride, silicon oxide, silicon oxynitride or amorphous silicon; and / or, The material of the third insulating layer includes at least one of silicon nitride, silicon oxide, silicon oxynitride or amorphous silicon.

17. The organic light emitting display device according to claim 1, wherein: A distance from an edge of a top surface of the third insulating layer to an edge of a top surface of the anode is greater than or equal to 0.

18. The organic light emitting display device according to claim 1, wherein: The top surface of the first insulating layer is flush with the top surface of at least one of the anodes; or, The top surface of the first insulating layer is higher than the top surface of the anode; or, A top surface of the first insulating layer is lower than a top surface of the anode.

19. The organic light emitting display device according to claim 7, characterized in that: The anode comprises a reflective anode layer and a transparent anode layer which are stacked, and the transparent anode layer is located on the upper layer of the reflective anode layer; The top surface of the first insulating layer is flush with the top surface of the reflective anode layer; or, A top surface of the first insulating layer is higher than a top surface of the reflective anode layer.

20. The organic light emitting display device according to claim 7, wherein: The anode comprises a reflective anode layer and a transparent anode layer which are stacked, and the transparent anode layer is located on the upper layer of the reflective anode layer; The anode includes a first anode, a second anode and a third anode; The organic light-emitting layer in the pixel region where the first anode, the second anode and the third anode are located has different light-emitting colors; The thickness of the transparent anode layer in the first anode is smaller than the thickness of the transparent anode layer in the second anode, and the thickness of the transparent anode layer in the second anode is smaller than the thickness of the transparent anode layer in the third anode; A top surface of the first insulating layer is flush with a top surface of the first anode.

21. The organic light emitting display device according to claim 1, characterized in that: The organic light emitting display device is a silicon-based micro organic light emitting display device.

22. A method for manufacturing an organic light emitting display device, characterized in that: include: Providing a substrate, the substrate comprising a plurality of pixel regions arranged at intervals; forming an anode in the pixel region; forming a first insulating material layer on the upper layer of the anode; Etching the first insulating material layer to form a first insulating layer, wherein the first insulating layer is located between adjacent pixel regions; forming a second insulating material layer on the first insulating layer; forming a third insulating material layer on the second insulating material layer, wherein the material of the second insulating material layer is different from that of the third insulating material layer; forming a fourth insulating material layer on the third insulating material layer; forming a fifth insulating material layer on the fourth insulating material layer; Etching the third insulating material layer, the fourth insulating material layer and the fifth insulating material layer to form a third insulating layer, a fourth insulating layer and a fifth insulating layer; Etching the sidewall of the fourth insulating layer so that the edge of the fifth insulating layer exceeds the edge of the fourth insulating layer; The second insulating material layer is etched to form a second insulating layer.

23. The manufacturing method according to claim 22, characterized in that: Etching the second insulating material layer includes: The second insulating material layer is etched using the third insulating layer as a mask.

24. The manufacturing method according to claim 22, characterized in that: The material of the second insulating material layer is different from that of the first insulating layer.

25. The manufacturing method according to claim 22, characterized in that: The thickness of the second insulating material layer is 5 nm to 50 nm.

26. The manufacturing method according to claim 22, characterized in that: The material of the second insulating material layer includes at least one of aluminum oxide, titanium oxide, zirconium oxide or hafnium oxide.

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