A method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device

Abstract

The present invention discloses a method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device, comprising: controlling a first power supply to apply a test current to the light-emitting device; causing a gate control electrode to apply multiple different test gate voltages to the first electrode and / or the second electrode, and collecting the luminous efficiency and luminous brightness; performing data fitting on the test gate voltage and the luminous efficiency to obtain a first functional relationship graph, and obtaining the light-emitting gate voltage from the first functional relationship graph; obtaining the light-emitting gate voltage corresponding to multiple different test currents; performing data fitting on each test current and the light-emitting gate voltage to obtain a second functional relationship graph; performing data fitting on the light-emitting brightness at each test current and its corresponding light-emitting gate voltage to obtain a third functional relationship graph; and obtaining the standard current and standard gate voltage corresponding to each standard grayscale value of the light-emitting device based on the second and third functional relationship graphs. The present invention can determine the gate voltage that allows each grayscale to achieve the ideal luminous efficiency.

Description

Technical Field

[0001] The present invention relates to the field of optoelectronic display, and in particular to a method for anchoring the light-emitting gate voltage and grayscale of a light-emitting device with a gate-regulated stacked structure. Background Art

[0002] Light-emitting devices in optoelectronic displays are an essential component of display devices, presenting images or information through light. The light-emitting principle of many light-emitting devices is based on the fact that, upon application of power, electrons and holes combine in the light-emitting layer to form excitons. When the excitons recombine, they release energy and emit light. Examples include QLEDs (quantum dot light-emitting diodes) and OLEDs (organic light-emitting diodes). These devices offer advantages such as rich color reproduction, high contrast, fast response speed, wide viewing angle, and energy conservation and environmental protection. The luminous efficiency or brightness of these devices is significantly affected by the carrier recombination process. Different functional layers and quantum dots are typically used to optimize device efficiency, a process that requires significant time, materials, and labor. Therefore, gate control has emerged. This allows the creation of a built-in electric field within these light-emitting devices, enabling the regulation of carrier mobility and, consequently, the luminous efficiency or brightness, thereby improving these luminous efficiency or brightness.

[0003] However, experiments using gate control to improve the luminous efficiency of light-emitting devices have found a relationship between the applied gate voltage and the improved luminous efficiency. Rather than increasing the applied gate voltage, the luminous efficiency increases. Instead, there exists an optimal gate voltage that maximizes the luminous efficiency. Therefore, determining the optimal gate voltage for different luminous currents has become a challenge. Summary of the Invention

[0004] The applicant has found through research that in the process of determining the optimal light-emitting gate voltage, the applied gate voltage not only affects the light-emitting efficiency, but also the light-emitting intensity, which can cause the light-emitting intensity corresponding to the original light-emitting current, or the grayscale value, to deviate.

[0005] In view of some of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is to provide a gate-controlled light-emitting gate voltage and grayscale anchoring method for a stacked structure light-emitting device, aiming to determine the gate voltage that can enable each grayscale to achieve ideal light-emitting efficiency.

[0006] To achieve the above objectives, the present invention provides a method for anchoring the light-emitting gate voltage and grayscale of a gate-regulated stacked structure light-emitting device, which is applied to a gate-regulated stacked structure light-emitting device, wherein the light-emitting device includes a light-emitting unit, a gate insulating layer, and a gate regulation electrode; the light-emitting unit sequentially includes a first electrode, a light-emitting functional layer, and a second electrode; a first power supply is applied to the first electrode and the second electrode, the first power supply is used to power the light-emitting unit to emit light; the gate regulation electrode applies a gate voltage relative to the first electrode and / or the second electrode, the gate voltage is used to construct an electric field to regulate the mobility of carriers in the light-emitting unit and adjust the luminous efficiency of the light-emitting unit; the method includes:

[0007] Step S1, controlling the first power supply to apply a test current to the light-emitting device; maintaining the test current, causing the gate control electrode to apply a plurality of different test gate voltages to the first electrode and / or the second electrode, and collecting the luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages;

[0008] Step S2, performing data fitting on each of the test gate voltages and the corresponding luminous efficiency, to obtain a first functional relationship diagram of the luminous efficiency corresponding to the test current following the gate voltage change;

[0009] Step S3, obtaining an inflection point gate voltage from the first functional relationship diagram, and determining the inflection point gate voltage as the light-emitting gate voltage of the test current;

[0010] Step S4, repeating steps S1 to S3 to obtain a plurality of light-emitting grid voltages corresponding to different test currents; performing data fitting on each of the test currents and the corresponding light-emitting grid voltages to obtain a second functional relationship diagram between the test current and the light-emitting grid voltage;

[0011] Step S5, performing data fitting on each of the test currents and the luminous brightness under the corresponding light-emitting gate voltage, to obtain a third functional relationship diagram between the test current under the corresponding light-emitting gate voltage and the grayscale value;

[0012] Step S6: Obtaining a standard current and a standard gate voltage corresponding to each standard grayscale value of the light-emitting device according to the second function relationship diagram and the third function relationship diagram.

[0013] Optionally, when the gate control electrode is located on one side of the second electrode, the second electrode is connected to the negative electrode of the first power supply, and the majority carriers of the light-emitting device are electrons, step S1 includes:

[0014] controlling the first power supply to apply a test current to the light emitting device;

[0015] Maintaining the test current so that the gate control electrode applies a plurality of different positive test gate voltages to the second electrode;

[0016] The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

[0017] Optionally, when the gate control electrode is located on one side of the first electrode, the first electrode is connected to the positive electrode of the first power supply, and the majority carriers of the light-emitting device are holes, step S1 includes:

[0018] controlling the first power supply to apply a test current to the light emitting device;

[0019] Maintaining the test current, so that the gate control electrode applies a plurality of different negative test gate voltages to the first electrode;

[0020] The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

[0021] Optionally, when the gate control electrode is located on one side of the second electrode, the second electrode is connected to the negative electrode of the first power supply, and the majority carriers of the light-emitting device are holes, step S1 includes:

[0022] controlling the first power supply to apply a test current to the light emitting device;

[0023] Maintaining the test current, so that the gate control electrode applies a plurality of different negative test gate voltages to the second electrode;

[0024] The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

[0025] Optionally, when the gate control electrode is located on one side of the first electrode, the first electrode is connected to the positive electrode of the first power supply, and the majority carriers of the light-emitting device are electrons, step S1 includes:

[0026] controlling the first power supply to apply a test current to the light emitting device;

[0027] Maintaining the test current so that the gate control electrode applies a plurality of different positive test gate voltages to the first electrode;

[0028] The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

[0029] Optionally, the light-emitting device is a quantum dot light-emitting diode, and the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer.

[0030] Optionally, the light-emitting device is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

[0031] Optionally, during use of the light-emitting device, the method further includes:

[0032] Obtaining a required grayscale value of the light-emitting device; and obtaining a standard current and a standard gate voltage of the required grayscale value according to the required grayscale value;

[0033] A standard current of the required grayscale value is applied to the light-emitting device, and at the same time, the gate control electrode applies a standard gate voltage of the required grayscale value to the first electrode or the second electrode.

[0034] Optionally, obtaining the inflection point gate voltage from the first functional relationship diagram in step S3 includes:

[0035] The maximum luminous efficiency is obtained from the first functional relationship diagram, and the gate voltage corresponding to the maximum luminous efficiency is determined as the inflection point gate voltage.

[0036] Optionally, step S6 includes:

[0037] Obtaining, according to the third functional relationship diagram, a standard current corresponding to each standard grayscale value of the light-emitting device;

[0038] According to the second functional relationship diagram, a standard gate voltage corresponding to the standard current is obtained; wherein the standard gate voltage is the light-emitting gate voltage of the standard current.

[0039] Beneficial effects of the present invention: 1. In the process of preparing a gate-controlled stacked structure light-emitting device, the present invention detects the optimal light-emitting gate voltage for different test currents to obtain the relationship between the power supply current in the light-emitting device and its corresponding optimal light-emitting gate voltage, and then collects the luminous brightness of each power supply current under the optimal gate voltage to anchor its corresponding grayscale value. The present invention can obtain the optimal gate voltage for each grayscale value corresponding to the current, so that the light-emitting device can achieve the maximum improvement in luminous efficiency during the gate voltage control process and effectively save energy. On the other hand, the present invention effectively solves the problem of grayscale value deflection in the original gate voltage control by first determining the relationship between the power supply current and its corresponding optimal light-emitting gate voltage, and then determining the grayscale corresponding to each power supply current under the optimal gate voltage. 2. The present invention connects the point data into a smooth line by fitting each functional relationship, thereby making the inflection point gate voltage determination more accurate and allowing some data that has not been measured to be reflected through these functional relationships. In this way, the light-emitting gate voltage and grayscale value can be anchored more accurately.

[0040] In summary, the present invention determines the optimal gate voltage for each supply current while ensuring accurate correspondence between the grayscale value and the supply current, thereby improving the luminous efficiency of the light-emitting device to an ideal state and saving energy. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 This is a flow chart of a method for gate-regulating the light-emitting gate voltage and grayscale anchoring of a stacked structure light-emitting device provided by a specific embodiment of the present invention;

[0042] Figure 2 1 is a schematic diagram of a first functional relationship between gate voltage and luminous efficiency provided by a specific embodiment of the present invention;

[0043] Figure 3 1 is a schematic structural diagram of a gate-controlled stacked structure light-emitting device provided in a first specific embodiment of the present invention;

[0044] Figure 4 1 is a schematic structural diagram of a gate-controlled stacked structure light-emitting device provided in a second specific embodiment of the present invention;

[0045] Figure 5 1 is a schematic structural diagram of a gate-controlled stacked structure light-emitting device provided in a third specific embodiment of the present invention;

[0046] Figure 6 It is a schematic structural diagram of a gate-regulated stacked structure light-emitting device provided in the fourth specific embodiment of the present invention. DETAILED DESCRIPTION

[0047] The present invention discloses a method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device. Those skilled in the art can refer to the content of this article and appropriately improve the technical details. It should be noted that all similar replacements and modifications are obvious to those skilled in the art and are considered to be included in the present invention. The method and application of the present invention have been described through preferred embodiments. Relevant personnel can obviously modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit and scope of the present invention to implement and apply the technology of the present invention.

[0048] The applicant has found through research that in the process of determining the optimal light-emitting gate voltage, the applied gate voltage not only affects the light-emitting efficiency, but also the light-emitting intensity, which can cause the light-emitting intensity corresponding to the original light-emitting current, or the grayscale value, to deviate.

[0049] Therefore, the embodiment of the present invention provides a light-emitting gate voltage and grayscale anchoring method for a gate-regulated stacked structure light-emitting device, which is applied to a gate-regulated stacked structure light-emitting device, wherein the light-emitting device includes a light-emitting unit, a gate insulating layer, and a gate-regulated electrode; the light-emitting unit includes a first electrode, a light-emitting functional layer, and a second electrode in sequence; the first electrode and the second electrode apply a first power source, the first power source is used to power the light-emitting unit to emit light, and the gate-regulated electrode applies a gate voltage relative to the first electrode and / or the second electrode, the gate voltage is used to construct an electric field to regulate the mobility of carriers in the light-emitting unit and adjust the light-emitting efficiency of the light-emitting unit. Figure 1 As shown, the method includes:

[0050] Step S1, control the first power supply to apply a test current to the light-emitting device; maintain the test current, so that the gate control electrode applies multiple different test gate voltages to the first electrode and / or the second electrode, and collect the luminous efficiency and luminous brightness of the light-emitting device under each test gate voltage.

[0051] It should be noted that the gate insulating layer is generally provided between the gate control electrode and the light-emitting functional layer. When maintaining the test current, the test current should be kept constant.

[0052] In this specific embodiment, the light emitting device can be a quantum dot light emitting diode, and the light emitting functional layer includes a hole transport layer, a quantum dot light emitting layer and an electron transport layer.

[0053] In another specific embodiment, the light-emitting device is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer.

[0054] Step S2: performing data fitting on each test gate voltage and its corresponding luminous efficiency to obtain a first functional relationship diagram of the luminous efficiency corresponding to the test current following the gate voltage change.

[0055] It should be noted that the more gate voltages tested, the more accurate the first functional relationship diagram. The first functional relationship diagram can reflect the relationship between some untested gate voltages and luminous efficiency, which can ensure that the subsequently determined inflection point gate voltage is more closely aligned with the optimal light-emitting gate voltage.

[0056] In this specific embodiment, the first functional relationship diagram can be as follows: Figure 2 As shown, the gate voltage generally does not include the direction, so the absolute value of the gate voltage is used, and EQE is the luminous efficiency.

[0057] Step S3: Obtain the inflection point gate voltage from the first functional relationship diagram, and determine the inflection point gate voltage as the light-emitting gate voltage of the test current.

[0058] It should be noted that as the gate voltage increases (generally speaking, the value increases, not the direction), the luminous efficiency will first increase and then decrease. The gate voltage corresponding to the inflection point (or maximum value) between this increase and decrease is the luminous gate voltage. In the embodiment of the present invention, the luminous gate voltage is the gate voltage corresponding to the maximum luminous efficiency.

[0059] In this specific embodiment, obtaining the inflection point gate voltage from the first functional relationship diagram in step S3 includes:

[0060] The maximum luminous efficiency is obtained from the first functional relationship diagram, and the gate voltage corresponding to the maximum luminous efficiency is determined as the inflection point gate voltage.

[0061] In this specific embodiment, the gate voltage increases or decreases at preset intervals, while ensuring that the luminous efficiency first increases and then decreases, or first decreases and then increases, during the increase or decrease process.

[0062] Step S4, repeating steps S1 to S3 to obtain light-emitting grid voltages corresponding to multiple different test currents; performing data fitting on each test current and its corresponding light-emitting grid voltage to obtain a second functional relationship diagram between the test current and the light-emitting grid voltage.

[0063] It should be noted that during the repetitive process, the test current applied each time is different.

[0064] In this specific embodiment, the applied test current increases or decreases at preset intervals during the repetitive process, with a minimum value of 0 and a maximum value greater than the current corresponding to the original maximum grayscale value. Because the test current and light-emitting gate voltage are point data, fitting them can help reflect some unmeasured data.

[0065] Step S5: performing data fitting on each test current and the luminous brightness under the corresponding light-emitting gate voltage to obtain a third functional relationship diagram between the test current under the corresponding light-emitting gate voltage and the grayscale value.

[0066] It should be noted that there is a direct linear relationship between grayscale value and luminous brightness: higher grayscale values ​​correspond to higher brightness; lower grayscale values ​​correspond to lower brightness. This relationship allows precise control of image brightness by adjusting grayscale values, making it an important means of adjusting image contrast and brightness in image processing. Therefore, in embodiments of the present invention, the functional relationship between test current and luminous brightness can be obtained by fitting the test current and luminous brightness.

[0067] It is worth mentioning that the reasons for fitting the third function are the same as those for fitting the second function.

[0068] Step S6: Obtain the standard current and standard gate voltage corresponding to each standard grayscale value of the light-emitting device according to the second function relationship diagram and the third function relationship diagram.

[0069] The standard gate voltage is the light-emitting gate voltage of the standard current.

[0070] It should be noted that the role of fitting the second function relationship diagram and the third function relationship diagram can be reflected in determining the standard current and standard gate voltage corresponding to the standard grayscale value. For example, if it is determined that the standard current corresponding to the 214 grayscale is not the test current, then the corresponding standard current and standard gate voltage cannot be found, but the corresponding standard current and standard gate voltage can be obtained through the second function relationship diagram and the third function relationship diagram.

[0071] In this specific embodiment, step S6 includes:

[0072] According to the third functional relationship diagram, obtaining the standard current corresponding to each standard grayscale value of the light-emitting device;

[0073] According to the second functional relationship diagram, a standard grid voltage corresponding to the standard current is obtained; wherein the standard grid voltage is the light-emitting grid voltage of the standard current.

[0074] After the light emitting device leaves the factory, during use of the light emitting device, the method further includes:

[0075] Obtaining a required grayscale value of the light-emitting device; obtaining a standard current and a standard gate voltage of the required grayscale value according to the required grayscale value;

[0076] A standard current of a required grayscale value is applied to the light emitting device, and at the same time, the gate regulating electrode applies a standard gate voltage of the required grayscale value to the first electrode or the second electrode.

[0077] In the first specific embodiment, as Figure 3 As shown, when the gate control electrode is located on one side of the second electrode, the second electrode is connected to the negative electrode of the first power supply, and the majority carriers of the light-emitting device are electrons, step S1 includes:

[0078] Controlling the first power supply to apply a test current to the light emitting device;

[0079] Maintaining the test current so that the gate control electrode applies a plurality of different positive test gate voltages to the second electrode;

[0080] The luminous efficiency and luminous brightness of the light-emitting device under each test gate voltage are collected.

[0081] It should be noted that when the OLED / QLED light-emitting functional layer of this embodiment is a QLED, the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer, and an electron transport layer. When the OLED / QLED light-emitting functional layer of this embodiment is an OLED, the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer.

[0082] In the second specific embodiment, Figure 4 As shown, when the gate control electrode is located on one side of the first electrode, the first electrode is connected to the positive electrode of the first power supply, and the majority carriers of the light-emitting device are holes, step S1 includes:

[0083] Controlling the first power supply to apply a test current to the light emitting device;

[0084] Maintaining the test current so that the gate control electrode applies a plurality of different negative test gate voltages to the first electrode;

[0085] The luminous efficiency and luminous brightness of the light-emitting device under each test gate voltage are collected.

[0086] It should be noted that when the OLED / QLED light-emitting functional layer of this embodiment is a QLED, the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer, and an electron transport layer. When the OLED / QLED light-emitting functional layer of this embodiment is an OLED, the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer.

[0087] In the third specific embodiment, Figure 5 As shown, when the gate control electrode is located on one side of the second electrode, the second electrode is connected to the negative electrode of the first power supply, and the majority carriers of the light-emitting device are holes, step S1 includes:

[0088] Controlling the first power supply to apply a test current to the light emitting device;

[0089] Maintaining the test current so that the gate control electrode applies a plurality of different negative test gate voltages to the second electrode;

[0090] The luminous efficiency and luminous brightness of the light-emitting device under each test gate voltage are collected.

[0091] It should be noted that when the OLED / QLED light-emitting functional layer of this embodiment is a QLED, the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer, and an electron transport layer. When the OLED / QLED light-emitting functional layer of this embodiment is an OLED, the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer.

[0092] In the fourth specific embodiment, if Figure 6 As shown, when the gate control electrode is located on one side of the first electrode, the first electrode is connected to the positive electrode of the first power supply, and the majority carriers of the light-emitting device are electrons, step S1 includes:

[0093] Controlling the first power supply to apply a test current to the light emitting device;

[0094] Maintaining the test current so that the gate control electrode applies a plurality of different positive test gate voltages to the first electrode;

[0095] The luminous efficiency and luminous brightness of the light-emitting device under each test gate voltage are collected.

[0096] It should be noted that when the OLED / QLED light-emitting functional layer of this embodiment is a QLED, the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer, and an electron transport layer. When the OLED / QLED light-emitting functional layer of this embodiment is an OLED, the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer.

[0097] In the process of preparing a gate-controlled stacked structure light-emitting device, the embodiment of the present invention detects the optimal light-emitting gate voltage for different test currents to obtain the relationship between the power supply current in the light-emitting device and its corresponding optimal light-emitting gate voltage, and then collects the luminous brightness of each power supply current under the optimal gate voltage to anchor its corresponding grayscale value. The embodiment of the present invention can obtain the optimal gate voltage for the current corresponding to each grayscale value, so that the light-emitting device can achieve the maximum improvement in luminous efficiency during the gate voltage control process, effectively saving energy. On the other hand, the embodiment of the present invention effectively solves the problem of grayscale value deflection in the original gate voltage control by first determining the relationship between the power supply current and its corresponding optimal light-emitting gate voltage, and then determining the grayscale corresponding to each power supply current under the optimal gate voltage.

[0098] The present invention uses fitting functions to connect point data into a smooth line, making it possible to more accurately determine the inflection point voltage and even include unmeasured data through these functions. This allows for more precise anchoring of the light-emitting voltage and grayscale values.

[0099] In summary, the embodiments of the present invention determine the optimal gate voltage for each supply current while ensuring accurate correspondence between the grayscale value and the supply current, thereby improving the luminous efficiency of the light-emitting device to an ideal state and saving energy.

[0100] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0101] Each embodiment in this specification is described in a related manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences between the other embodiments. In particular, the system embodiment is generally similar to the method embodiment, so the description is relatively simple. For related parts, refer to the description of the method embodiment.

[0102] The above are only preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention are included in the scope of protection of the present invention.

Claims

1. A method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device, applied to a gate-controlled stacked structure light-emitting device, characterized in that: The light-emitting device includes a light-emitting unit, a gate insulating layer, and a gate control electrode; the light-emitting unit includes a first electrode, a light-emitting functional layer, and a second electrode in sequence; a first power supply is applied to the first electrode and the second electrode, the first power supply is used to power the light-emitting unit to emit light, and the gate control electrode applies a gate voltage relative to the first electrode and / or the second electrode, the gate voltage is used to construct an electric field to control the mobility of carriers in the light-emitting unit and adjust the luminous efficiency of the light-emitting unit; the method includes: Step S1, controlling the first power supply to apply a test current to the light-emitting device; maintaining the test current, causing the gate control electrode to apply a plurality of different test gate voltages to the first electrode and / or the second electrode, and collecting the luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages; Step S2, performing data fitting on each of the test gate voltages and the corresponding luminous efficiency, to obtain a first functional relationship diagram of the luminous efficiency corresponding to the test current following the gate voltage change; Step S3, obtaining an inflection point gate voltage from the first functional relationship diagram, and determining the inflection point gate voltage as the light-emitting gate voltage of the test current; Step S4, repeating steps S1 to S3 to obtain a plurality of light-emitting grid voltages corresponding to different test currents; performing data fitting on each of the test currents and the corresponding light-emitting grid voltages to obtain a second functional relationship diagram between the test current and the light-emitting grid voltage; Step S5, performing data fitting on each of the test currents and the luminous brightness under the corresponding light-emitting gate voltage, to obtain a third functional relationship diagram between the test current under the corresponding light-emitting gate voltage and the grayscale value; Step S6: Obtaining a standard current and a standard gate voltage corresponding to each standard grayscale value of the light-emitting device according to the second function relationship diagram and the third function relationship diagram.

2. The method for gate-controlled light-emitting gate voltage and grayscale anchoring of a stacked structure light-emitting device according to claim 1, characterized in that: When the gate control electrode is located on one side of the second electrode, the second electrode is connected to the negative electrode of the first power supply, and the majority carriers of the light-emitting device are electrons, step S1 includes: controlling the first power supply to apply a test current to the light emitting device; Maintaining the test current so that the gate control electrode applies a plurality of different positive test gate voltages to the second electrode; The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

3. The method for gate-controlled light-emitting gate voltage and grayscale anchoring of a stacked structure light-emitting device according to claim 1, characterized in that: When the gate control electrode is located on one side of the first electrode, the first electrode is connected to the positive electrode of the first power supply, and the majority carriers of the light-emitting device are holes, step S1 includes: controlling the first power supply to apply a test current to the light emitting device; Maintaining the test current, so that the gate control electrode applies a plurality of different negative test gate voltages to the first electrode; The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

4. The method for gate-controlled light-emitting gate voltage and grayscale anchoring of a stacked structure light-emitting device according to claim 1, wherein: When the gate control electrode is located on one side of the second electrode, the second electrode is connected to the negative electrode of the first power supply, and the majority carriers of the light-emitting device are holes, the step S1 includes: controlling the first power supply to apply a test current to the light emitting device; Maintaining the test current, so that the gate control electrode applies a plurality of different negative test gate voltages to the second electrode; The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

5. The method for gate-controlled light-emitting gate voltage and grayscale anchoring of a stacked structure light-emitting device according to claim 1, characterized in that: When the gate control electrode is located on one side of the first electrode, the first electrode is connected to the positive electrode of the first power supply, and the majority carriers of the light-emitting device are electrons, step S1 includes: controlling the first power supply to apply a test current to the light emitting device; Maintaining the test current so that the gate control electrode applies a plurality of different positive test gate voltages to the first electrode; The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

6. The method for gate-controlled light-emitting gate voltage and grayscale anchoring of a stacked structure light-emitting device according to claim 1, characterized in that: The light-emitting device is a quantum dot light-emitting diode, and the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer.

7. The method for gate-controlled light-emitting gate voltage and grayscale anchoring of a stacked structure light-emitting device according to claim 1, characterized in that: The light-emitting device is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

8. The method for gate-controlled light-emitting gate voltage and grayscale anchoring of a stacked structure light-emitting device according to claim 1, characterized in that: During use of the light emitting device, the method further includes: Obtaining a required grayscale value of the light-emitting device; and obtaining a standard current and a standard gate voltage of the required grayscale value according to the required grayscale value; A standard current of the required grayscale value is applied to the light-emitting device, and at the same time, the gate control electrode applies a standard gate voltage of the required grayscale value to the first electrode or the second electrode.

9. The method for gate-controlled light-emitting gate voltage and grayscale anchoring of a stacked structure light-emitting device according to claim 1, characterized in that: Obtaining the inflection point gate voltage from the first functional relationship diagram in step S3 includes: The maximum luminous efficiency is obtained from the first functional relationship diagram, and the gate voltage corresponding to the maximum luminous efficiency is determined as the inflection point gate voltage.

10. The method for gate-controlled light-emitting gate voltage and grayscale anchoring of a stacked structure light-emitting device according to claim 1, characterized in that: The step S6 comprises: Obtaining a standard current corresponding to each standard grayscale value of the light-emitting device according to the third functional relationship diagram; According to the second functional relationship diagram, a standard gate voltage corresponding to the standard current is obtained; wherein the standard gate voltage is the light-emitting gate voltage of the standard current.

Images