Perovskite solar cell buried bottom interface modifier, preparation method and application thereof

Abstract

The application discloses a perovskite solar cell buried bottom interface modifier and a preparation method and application thereof, and belongs to the technical field of photovoltaic solar materials. The 2-(benzoylamino) benzoic acid disclosed in the application is used as a perovskite solar cell buried bottom interface modifier, the molecule has a structure shown in formula (1), the molecule uses benzoic acid as an anchoring group, is used for modifying a hole transport layer NiO x / perovskite interface layer, defects at a film grain boundary of the NiO x / perovskite layer are reduced, the morphology of the perovskite layer film is further regulated, the interface charge transfer capacity of the NiO x / perovskite layer is enhanced, interface reaction and carrier recombination are inhibited, the photoelectric conversion efficiency and stability of the perovskite solar cell are improved, and a new preparation approach for preparing a high-efficiency and stable perovskite solar cell is provided.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photovoltaic solar materials, and more particularly to a perovskite solar cell buried bottom modifier, a preparation method and application thereof. BACKGROUND

[0002] As an indispensable part of traditional perovskite solar cells (PSC), the hole transport layer (HTL) plays an important role in enhancing the performance of PSC by increasing hole collection, blocking electrons, and protecting perovskite from external influences such as moisture, heat, and oxygen. As a commonly used hole transport material (HTM), nickel oxide (NiO x ) shows great prospects in various photovoltaic devices due to its inherent excellent chemical stability, high hole mobility, and low manufacturing cost. In recent years, the power conversion efficiency (PCE) of halide PSC based on NiO x has made great progress. However, as a typical HTM, NiO x is easily affected by subsequent processing in practical applications, resulting in low photoelectric conversion efficiency and poor stability of the device, which is due to the adverse reaction between perovskite and highly active nickel and the carrier recombination at the NiO x / perovskite interface.

[0003] There are currently two ways to improve the above-mentioned defects. One is to directly modify the nickel oxide layer. CN118265409A discloses a method for preparing a high-performance nickel oxide hole transport layer at low temperature. A nitrogen-doped nickel oxide film is prepared as a hole transport layer, and the average photoelectric conversion efficiency of a flexible perovskite solar cell based on the nitrogen-doped nickel oxide hole transport layer is increased from 13.9% to 15.4%. Although the photoelectric efficiency is improved, it is still low.

[0004] The second is to add an interface modification layer at the NiO x / perovskite interface to improve the adverse reaction between perovskite and highly active nickel and the carrier recombination at the NiO x / perovskite interface through interface engineering. The photoelectric efficiency obtained by interface engineering is higher than that of direct modification, and the photoelectric efficiency of organic molecule surface modification is mostly between 17% and 20%. Qin Wang et al. discloses a series of benzoic acid self-assembled monolayer modified NiO x , and the photoelectric efficiency is 18.4%, which still needs to be improved.

[0005] Therefore, it is very important to develop a new modifier that acts between the hole transport layer NiO x / perovskite layer to improve the photoelectric conversion efficiency and stability of perovskite solar cells. SUMMARY

[0006] The primary object of the present application is to overcome the drawbacks of the prior art described above, and to provide an application of a small molecule compound in a perovskite solar cell buried bottom interface modifier.

[0007] Another object of the present application is to provide a perovskite solar cell buried bottom interface modifier.

[0008] Another object of the present application is to provide a preparation method of a perovskite solar cell buried bottom interface modifier.

[0009] Another object of the present application is to provide an application of a perovskite solar cell buried bottom interface modifier in the preparation of a perovskite solar cell.

[0010] Another object of the present application is to provide a perovskite solar cell.

[0011] Still another object of the present application is to provide a preparation method of a perovskite solar cell.

[0012] The above technical objects of the present application are achieved by the following technical solutions:

[0013] An application of a small molecule compound in a perovskite solar cell buried bottom interface modifier.

[0014] Specifically, the small molecule compound is 2-(benzoylamino)benzoic acid.

[0015] The preparation method of 2-(benzoylamino)benzoic acid of the present application is referred to the reference (Changshu Wu, Yang Gao, et al. Ag-Catalyzed Practical Synthesis of N-Acyl Anthranilic Acids from Anthranils and Carboxylic Acids. The Journal of Organic Chemistry, 2024, 89, 3150-3160. DOI: doi.org / 10.1021 / acs.joc.3c02586).

[0016] A perovskite solar cell buried bottom interface modifier, comprising: 2-(benzoylamino)benzoic acid.

[0017] 2-(Benzoyl amino)benzoic acid as a buried interface modifier can passivate defects at the interface between the perovskite layer and the hole transport layer. 2-(Benzoyl amino)benzoic acid can form a dense and compact modification layer, which can effectively reduce the direct contact between the perovskite layer and the high-activity nickel oxide in the hole transport layer, thereby reducing the adverse reaction between the perovskite layer and the trivalent and tetravalent nickel oxide and inhibiting the charge carrier recombination at the interface between the perovskite layer and the hole transport layer, further improving the photoelectric conversion efficiency and stability of the perovskite solar cell. x

[0018] Specifically, the solvent of the interface modifier is an alcohol solvent, selected from at least one of methanol, ethanol or isopropanol.

[0019] Specifically, the concentration of 2-(benzoyl amino)benzoic acid in the interface modifier is 0.80-1.20 mg / mL.

[0020] The purpose of controlling the concentration of 2-(benzoyl amino)benzoic acid in the interface modifier to be 0.80-1.20 mg / mL is to improve the photoelectric efficiency of the perovskite battery.

[0021] Specifically, the buried interface modifier of the perovskite solar cell comprises 2-(benzoyl amino)benzoic acid and Me-2PACz.

[0022] Me-2PACz belongs to SAM molecules and is a P-type semiconductor, which has the advantages of high hole selectivity, high hole transport rate and low interface trap state density, etc. The energy level arrangement of the perovskite material is modified and improved, which makes it more hydrophobic. The buried interface is further modified to induce a perovskite layer with larger crystal grains and high crystallinity.

[0023] The buried interface modifier of the perovskite solar cell provided by the application is used to improve the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0024] More specifically, the concentration of 2-(benzoyl amino)benzoic acid in the interface modifier is 0.10-0.30 mg / mL.

[0025] More specifically, the concentration of Me-2PACz in the interface modifier is 0.3-0.5 mg / mL.

[0026] ​The synergistic effect of Me-2PACz and 2-(benzoylamino)benzoic acid can further improve the photoelectric efficiency. When the two are synergistically used, if the concentration of 2-(benzoylamino)benzoic acid is too low, it may cause insufficient passivation of defects at the interface between the perovskite layer and the hole transport layer, and cannot inhibit the charge carrier recombination at the interface. If the concentration of 2-(benzoylamino)benzoic acid is too high, the photoelectric efficiency of the perovskite solar cell will decrease. The concentration of 2-(benzoylamino)benzoic acid in the range of 0.10-0.30 mg / mL can further improve the photoelectric efficiency and stability of the perovskite solar cell.

[0027] The preparation method of the perovskite solar cell buried bottom interface modifier comprises the following steps:

[0028] Dissolve the 2-(benzoylamino)benzoic acid to obtain the perovskite solar cell buried bottom interface modifier;

[0029] Or dissolve and mix the 2-(benzoylamino)benzoic acid and Me-2PACz to obtain the perovskite solar cell buried bottom interface modifier.

[0030] The mixing of 2-(benzoylamino)benzoic acid and Me-2PACz can further improve the photoelectric efficiency and stability of the perovskite solar cell.

[0031] The application also protects the use of the perovskite solar cell buried bottom interface modifier in the preparation of perovskite solar cells.

[0032] Specifically, the hole transport layer of the perovskite solar cell is NiO x .

[0033] Specifically, the perovskite solar cell buried bottom interface modifier is a perovskite solar cell modifier for modifying the hole transport layer NiO x / perovskite layer.

[0034] Specifically, the perovskite solar cell is an inverted perovskite solar cell.

[0035] A perovskite solar cell comprises, from bottom to top, a conductive glass layer, a hole transport layer, an interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer.

[0036] Specifically, the interface modification layer comprises 2-(benzoylamino)benzoic acid.

[0037] More specifically, the interface modification layer comprises 2-(benzoylamino)benzoic acid and Me-2PACz.

[0038] Specifically, the interface modification layer is formed by spin-coating the perovskite solar cell buried interface modifier and then removing the solvent.

[0039] Specifically, the material of the conductive glass layer is one or both of ITO conductive glass or FTO conductive glass.

[0040] Specifically, the material of the perovskite layer is formamidinium halide, alkylammonium halide, cesium halide, and lead halide.

[0041] More specifically, the formamidinium halide is one or more of formamidinium hydrochloride, formamidinium bromide, and formamidinium iodide.

[0042] More specifically, the alkylammonium halide is one or more of methylammonium iodide, methylammonium chloride, methyltriethylammonium iodide, dimethyldiethylammonium iodide, nonylammonium iodide, or dodecyldimethylethylammonium iodide.

[0043] More specifically, the cesium halide is one or more of cesium iodide, cesium chloride, or cesium bromide.

[0044] More specifically, the lead halide is one or more of lead iodide, lead chloride, or lead bromide.

[0045] Specifically, the material of the electron transport layer is a carbon 60 derivative.

[0046] More specifically, the carbon 60 derivative is one or more of [6,6]-phenyl C61 butyric acid methyl ester, [6,6]-thiophene C61 butyric acid methyl ester, [6,6]-phenyl-C61-butyric acid n-octyl ester, or [6,6]-phenyl-C61-butyric acid dodecyl ester.

[0047] The carbon 60 derivative inherits the conjugated cage-like carbon molecular structure of fullerene, making it have excellent electron containment capacity and high electron mobility.

[0048] Specifically, the material of the metal electrode layer is one or more of silver, gold, or copper.

[0049] A preparation method of a perovskite solar cell, the preparation method comprising: sequentially preparing a hole transport layer, an interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer on a conductive glass layer by a spin-coating method, to obtain the perovskite solar cell.

[0050] Specifically, the preparation method of the hole transport layer comprises: ultrasonic cleaning the conductive glass with detergent-free ionized water, acetone, and isopropyl alcohol alternately, and then blowing dry with argon, followed by ultraviolet ozone treatment, and spin-coating a hole transport layer solution prepared from the material of the hole transport layer on the surface of the conductive glass to obtain the hole transport layer.

[0051] Specifically, the preparation method of the interface modification layer is specifically as follows: the interface modification material is prepared into an interface modification solution, which is spin-coated on the surface of the hole transport layer to obtain the interface modification layer.

[0052] Specifically, the preparation method of the perovskite layer is specifically as follows: the material of the perovskite layer is prepared into a perovskite solution, which is spin-coated on the surface of the hole transport layer to obtain the perovskite layer.

[0053] More specifically, the solvent of the perovskite solution is one or more of DMF, DMSO, THF, acetone, isopropanol, toluene or chlorobenzene.

[0054] Specifically, the preparation method of the electron transport layer is specifically as follows: the material of the electron transport layer is prepared into an electron transport layer solution, which is spin-coated on the surface of the perovskite modification layer, and then bathocuproin (BCP) is spin-coated to obtain the electron transport layer.

[0055] More specifically, the spin-coating time in the preparation method is 10-30s.

[0056] More specifically, the spin-coating speed in the preparation method is 1000-5000rpm.

[0057] The function of bathocuproin is to block the hole transport, which can make the performance of the solar cell device better.

[0058] Specifically, the preparation method of the metal electrode layer is specifically as follows: the electron transport layer is placed into a vacuum coating machine, and evaporation is performed to obtain the metal electrode layer.

[0059] The present application has the following beneficial effects:

[0060] (1) 2-(benzoylamino)benzoic acid is used as a buried interface modifier, the molecule uses benzoic acid as an anchor group, reduces the defects at the film grain boundaries of the hole transport layer and the perovskite layer, thereby regulating the film morphology of the perovskite layer, enhancing the charge collection, inhibiting the interface reaction and carrier recombination, and improving the photoelectric conversion efficiency of the perovskite solar cell and the stability of the cell.

[0061] (2) 2-(benzoylamino)benzoic acid and Me-2PACz are used as buried interface modifiers, and the two synergistically improve the photoelectric conversion efficiency of the perovskite solar cell and the stability of the cell. BRIEF DESCRIPTION OF DRAWINGS

[0062] Figure 1 The J-V curve graph of the perovskite solar cell of the examples and comparative examples.

[0063] Figure 2 The steady-state photoluminescence (PL) spectrum of the perovskite layer of Example 3 and Comparative Example 2.

[0064] Figure 3 Time-resolved photoluminescence (TRPL) spectra of the perovskite layers of Example 2 and Comparative Example 2.

[0065] Figure 4 Normalized efficiency-time curve of the perovskite solar cells of Example 3 and Comparative Example 2. DETAILED DESCRIPTION

[0066] The application is further described below in conjunction with examples. These examples are only used to illustrate the application and not used to limit the scope of the application. The experimental methods in the following example embodiments are not specified, which are generally according to the conventional conditions in the art or according to the conditions recommended by the manufacturer; the raw materials, reagents, etc. used, if not specifically stated, are raw materials and reagents that can be obtained commercially through conventional market channels. Any non-essential changes and substitutions made by those skilled in the art on the basis of the present application are within the scope of the present application.

[0067] The preparation method of 2-(benzoylamino)benzoic acid of the present application is referred to (Changshu Wu, Yang Gao, et al. Ag-Catalyzed Practical Synthesis of N-Acyl Anthranilic Acids from Anthranils and Carboxylic Acids. The Journal of Organic Chemistry, 2024, 89, 3150-3160. DOI: doi.org / 10.1021 / acs.joc.3c02586), wherein the 2-(benzoylamino)benzoic acid has a molecular structure shown in formula (1):

[0068]

[0069] Example 1

[0070] The present embodiment provides a perovskite solar cell buried bottom interface modifier, comprising: 2-(benzoylamino)benzoic acid with a concentration of 1.00 mg / mL.

[0071] The preparation method of the perovskite solar cell buried bottom interface modifier described above comprises the following steps:

[0072] Dissolve 1.00 mg of 2-(benzoylamino)benzoic acid in 1 mL of isopropyl alcohol, and magnetically stir for 1 hour to obtain the perovskite solar cell buried bottom interface modifier.

[0073] A perovskite solar cell sequentially comprises, from bottom to top, a conductive glass layer, a hole transport layer, an interface modification layer, a perovskite layer, an electron transport layer and a metal electrode layer.

[0074] The interface modification layer is formed by spin-coating a buried interface modifier of the perovskite solar cell on the hole transport layer and then removing the solvent.

[0075] The preparation method of the perovskite solar cell comprises the following steps:

[0076] S1: The ITO conductive glass is cleaned by ultrasonic cleaning with a detergent, deionized water, acetone and isopropanol alternately for 15 min, and then dried with argon, and then placed in an ultraviolet ozone cleaning machine for ultraviolet ozone treatment, and after the treatment, 40 μL of a 15 mg / mL NiO solution is spin-coated on the surface of the conductive glass layer at a spin speed of 4000 rpm for 30 s, and then transferred to a heating table at 150°C for heating for 30 min to obtain the hole transport layer; x

[0077] S2: In a glove box under a nitrogen atmosphere, 40 μL of an interface modifier is spin-coated on the hole transport layer at a spin speed of 4000 rpm for 30 s, and then transferred to a heating table for heating to obtain the interface modification layer;

[0078] S3: In a glove box under a nitrogen atmosphere, 68 μL of a perovskite solution is first spin-coated on the surface of the interface modification layer, spin-coated at a speed of 1000 rpm for 10 s, then spin-coated at a speed of 5000 rpm for 30 s, and then drop 10 s of chlorobenzene, and then transferred to a heating table at 100°C for heating for 30 min to obtain the perovskite layer;

[0079] S4: In a glove box under a nitrogen atmosphere, 23 mg of an electron transport layer material [6,6]-phenyl C61 butyric acid methyl ester (PCBM) is dissolved in 1 mL of chlorobenzene to prepare a PCBM electron transport layer solution, and 28 μL of the PCBM electron transport layer solution is spin-coated on the surface of the perovskite modification layer at a spin speed of 3000 rpm for 30 s, and then transferred to a heating table at 65°C for heating for 10 min, and then spin-coated with 35 μL of 2.5 mg / mL bathocuproin (BCP) at a spin speed of 5000 rpm for 30 s to obtain the electron transport layer; 61 61 61

[0080] S5: The electron transport layer is placed in a vacuum coating machine, vacuumed, a silver metal source is placed in a tungsten boat, and a silver metal electrode is evaporated to obtain the perovskite solar cell.

[0081] Example 2 ​​​​

[0082] The embodiment provides a perovskite solar cell buried bottom interface modifier, which comprises: 0.10 mg / mL 2-(benzoylamino) benzoic acid and 0.40 mg / mL Me-2PACz.

[0083] The preparation method of the perovskite solar cell buried bottom interface modifier comprises the following steps:

[0084] 0.10 mg of 2-(benzoylamino) benzoic acid and 0.40 mg of Me-2PACz are dissolved in 1 mL of isopropyl alcohol, and magnetic stirring is performed for 1 hour, so that the perovskite solar cell buried bottom interface modifier is obtained.

[0085] A perovskite solar cell and a preparation method thereof are both referred to the embodiment 1.

[0086] Embodiment 3

[0087] The embodiment provides a perovskite solar cell buried bottom interface modifier, which comprises: 0.20 mg / mL 2-(benzoylamino) benzoic acid and 0.40 mg / mL Me-2PACz.

[0088] The preparation method of the perovskite solar cell buried bottom interface modifier comprises the following steps:

[0089] 0.20 mg of 2-(benzoylamino) benzoic acid and 0.40 mg of Me-2PACz are dissolved in 1 mL of isopropyl alcohol, and magnetic stirring is performed for 1 hour, so that the perovskite solar cell buried bottom interface modifier is obtained.

[0090] A perovskite solar cell and a preparation method thereof are both referred to the embodiment 1.

[0091] Embodiment 4

[0092] The embodiment provides a perovskite solar cell buried bottom interface modifier, which comprises: 0.30 mg / mL 2-(benzoylamino) benzoic acid and 0.40 mg / mL Me-2PACz.

[0093] The preparation method of the perovskite solar cell buried bottom interface modifier comprises the following steps:

[0094] 0.30 mg of 2-(benzoylamino) benzoic acid and 0.40 mg of Me-2PACz are dissolved in 1 mL of isopropyl alcohol, and magnetic stirring is performed for 1 hour, so that the perovskite solar cell buried bottom interface modifier is obtained.

[0095] A perovskite solar cell and a preparation method thereof are both referred to the embodiment 1.

[0096] Comparative example 1

[0097] The comparative example provides a perovskite solar cell, which is identical to Example 1 except that the interface modification layer does not contain 2-(benzoylamino)benzoic acid.

[0098] The preparation method of the perovskite solar cell described above is identical to Example 1 except that the preparation of the interface modifier solution does not contain 2-(benzoylamino)benzoic acid.

[0099] Comparative Example 2

[0100] The comparative example provides a perovskite solar cell, which is identical to Example 2 except that the interface modification layer does not contain 2-(benzoylamino)benzoic acid.

[0101] The preparation method of the perovskite solar cell described above is identical to Example 2 except that the preparation of the interface modifier solution does not contain 2-(benzoylamino)benzoic acid.

[0102] Performance test

[0103] The current density and voltage (J-V) characteristic curves, i.e. short-circuit current-open-circuit voltage curves, of the perovskite solar cells of the examples and comparative examples were measured, and the test results are shown in Figure 1 and Table 1.

[0104] The unencapsulated perovskite solar cells of Example 3 and Comparative Example 2 were stored in a nitrogen environment for 1115 hours at room temperature and tested for long-term stability, i.e. photoelectric conversion efficiency-time curves, in air, and the test results are shown in Figure 4 .

[0105] The perovskite layers of the perovskite solar cells of Example 3 and Comparative Example 2 were analyzed by steady-state photoluminescence, and the test results are shown in Figure 2 ; the perovskite layers of the perovskite solar cells of Example 2 and Comparative Example 2 were analyzed by transient photoluminescence, and the test results are shown in Figure 3 . The test structures of Example 2 and 3 are ITO / NiO x / 2-(benzoylamino)benzoic acid+Me-2PACz / perovskite layer, and the test structure of Comparative Example 2 is ITO / NiO x / Me-2PACz / perovskite layer.

[0106] The experimental results are shown below:

[0107] Figure 1 The J-V curves of the perovskite solar cells of the examples and comparative examples are shown in the figure. The results are shown in Table 1.

[0108] Table 1. Test results of current density and voltage characteristic curves.

[0109]

[0110] As shown in Table 1, the perovskite solar cell of the present invention modifies the hole transport layer NiO by using 2-(benzoylamino)benzoic acid as an interface modifier. x The perovskite layer interface improved the photoelectric conversion efficiency of perovskite solar cells from 19.28% to 20.82%, which is attributed to the successful improvement of NiO by the passivation layer. x The perovskite layer interface reduces nonradiative recombination at the interface and promotes hole extraction. Furthermore, benzoic acid in 2-(benzoylamino)benzoic acid can also serve as an anchoring group to modify the hole transport layer NiO. x / Perovskite layer interface. The steric hindrance of the carbazole core in Me-2PACz restricts the formation of a dense modification layer on the bottom interface of the perovskite. Therefore, by using Me-2PACz doped with 2-(benzoylamino)benzoic acid to modify NiO-based layers... x The buried interface of PSC, and the two work together to passivate NiO. x / Defects in the perovskite layer. The PCE of the Me-2PACz-doped 2-(benzoylamino)benzoic acid device increased from 21.15% to 23.82% compared to the Me-2PACz-modified device alone. This indicates that using Me-2PACz-doped 2-(benzoylamino)benzoic acid as an interface modification layer can form a dense and compact modification layer, effectively reducing the direct contact between the perovskite and the highly active nickel in the hole transport layer. Therefore, it can reduce adverse reactions between the perovskite layer and the highly active trivalent and tetravalent nickel, and suppress the hole transport layer NiO. x Carrier recombination at the perovskite layer interface promotes carrier transport and further improves the photoelectric conversion efficiency of perovskite solar cells.

[0111] In addition, the photoelectric conversion efficiency of the perovskite solar cells in Examples 2 and 4 is slightly lower than that of Example 3 (23.82%), but greater than that of Comparative Example 2 (21.15%).

[0112] Figure 2 The images show the steady-state photoluminescence (PL) spectra of the perovskite layers in Example 3 and Comparative Example 2. Figure 2 It can be seen that the perovskite fluorescence spectrum intensity of Example 3 exhibits a significant quenching phenomenon, indicating that the modification of the hole transport layer NiO by adding 2-(benzoylamino)benzoic acid to the modifier is effective. x The perovskite layer interface forms a dense and compact modification layer, which is beneficial for the interaction between the perovskite layer and NiO. x Charge extraction and transfer between them reduces nonradiative recombination at the perovskite interface.

[0113] Figure 3 Time-resolved photoluminescence (TRPL) spectra of the perovskite layers of Example 2 and Comparative Example 2. The quenching lifetime of the latter perovskite layer is reduced more obviously, indicating that the interface modification layer of 2-(benzoylamino) benzoic acid can better modify the NiO x perovskite layer interface. Non-radiative recombination caused by defects at the interface is inhibited, promoting carrier extraction rate and transmission efficiency, indicating that the interface modification of 2-(benzoylamino) benzoic acid has a better defect passivation effect at the interface, which is consistent with the PL results.

[0114] Figure 4 Normalized efficiency-time curve of the perovskite solar cells of Example 3 and Comparative Example 2. From the Figure 4 It can be seen that the device is stored in a nitrogen environment at 25℃, and the J-V curve test of the unpackaged device is carried out in air. The device efficiency of Example 3 can still maintain 82% of the initial efficiency after 1115 hours of storage, while the battery efficiency of Comparative Example 2 has decayed to 49% of the initial efficiency after 993 hours of storage. It can be seen that the stability of the device is obviously enhanced, which indicates that the interface modification by adding 2-(benzoylamino) benzoic acid can reduce the adverse reaction between the perovskite layer and the high-valence nickel, and realize the improvement of the stability of the perovskite solar cell.

[0115] Obviously, the above examples of the present application are only examples for clearly illustrating the present application, and are not intended to limit the embodiments of the present application. For ordinary skilled in the art, other different forms of changes or variations can be made on the basis of the above description. Here, it is not necessary and impossible to exhaust all the embodiments. Any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the claims of the present application.

Claims

1. The application of a small molecule compound in a perovskite solar cell buried interface modifier, characterized in that, The small molecule compound is 2-(benzoylamino)benzoic acid; 2-(benzoylamino)benzoic acid has the molecular structure shown in formula (1): Equation (1); The perovskite solar cell buried interface modifier is a NiO layer modifier for the hole transport layer. x / Perovskite solar cell modifier with perovskite layer.

2. A perovskite solar cell buried interface modifier, characterized in that, include: 2-(benzoylamino)benzoic acid; 2-(benzoylamino)benzoic acid has the molecular structure shown in formula (1): Equation (1); The perovskite solar cell buried interface modifier is a NiO layer modifier for the hole transport layer. x / Perovskite solar cell modifier with perovskite layer.

3. The subsurface interface modifier according to claim 2, characterized in that, The concentration of 2-(benzoylamino)benzoic acid is 0.80~1.20 mg / mL.

4. The subsurface interface modifier according to claim 2, characterized in that, include: 2-(benzoylamino)benzoic acid and Me-2PACz.

5. The subsurface interface modifier according to claim 4, characterized in that, The concentration of 2-(benzoylamino)benzoic acid in the embedded interface modifier is 0.10~0.30 mg / mL.

6. A method for preparing a perovskite solar cell buried interface modifier, characterized in that, Includes the following steps: Dissolving 2-(benzoylamino)benzoic acid yields the perovskite solar cell buried interface modifier according to any one of claims 2 to 3; Alternatively, 2-(benzoylamino)benzoic acid can be dissolved and mixed with Me-2PACz to obtain the perovskite solar cell buried interface modifier according to any one of claims 4 to 5.

7. The application of the perovskite solar cell buried interface modifier according to any one of claims 2 to 5 in the preparation of perovskite solar cells.

8. A perovskite solar cell, comprising, from bottom to top, a conductive glass layer, a hole transport layer, an interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer, characterized in that, The interface modification layer comprises 2-(benzoylamino)benzoic acid; 2-(benzoylamino)benzoic acid has the molecular structure shown in formula (1): Equation (1); The hole transport layer of the perovskite solar cell is NiO. x .

9. The perovskite solar cell according to claim 8, characterized in that, The interface modification layer comprises 2-(benzoylamino)benzoic acid and Me-2PACz.

10. A method for preparing a perovskite solar cell according to any one of claims 8-9, characterized in that, The preparation method includes: sequentially preparing a hole transport layer, an interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer on a conductive glass layer using a spin coating method, thereby obtaining the perovskite solar cell.

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