OLED display panel, preparation method thereof and display device

Abstract

The application provides an OLED display panel, a preparation method thereof and a display device. The OLED display panel comprises a light-emitting substrate, a thin-film transistor array layer and a photoelectric conversion layer. The light-emitting substrate comprises a plurality of light-emitting units. Each light-emitting unit comprises an anode layer, a light-emitting layer and a cathode layer. The thin-film transistor array layer is arranged on the light-emitting substrate. The thin-film transistor array layer comprises a plurality of thin-film transistors. Each thin-film transistor comprises an active layer, a source electrode and a drain electrode arranged on the active layer, and a gate electrode. The drain electrode is electrically connected to the anode layer. The photoelectric conversion layer is arranged on the light-emitting side of the light-emitting substrate. The photoelectric conversion layer comprises a first photosensitive area and a second photosensitive area. The second photosensitive area is electrically connected to the cathode layer. The first photosensitive area is electrically connected to the gate electrode. The first photosensitive area and the second photosensitive area can convert light energy into an electric signal under the action of external light. The display effect of the OLED display panel is improved.

Description

Technical Field

[0001] This application belongs to the field of display technology, and more specifically, relates to an OLED display panel, its preparation method, and a display device. Background Technology

[0002] When mobile phones and other display devices using Organic Light-Emitting Diode (OLED) display panels are used under bright sunlight, the brightness of the OLED display panel increases to maintain perceived contrast and allow users to comfortably view the content. However, when the OLED display panel is exposed to localized strong light, manually adjusting the brightness can only increase the overall brightness so that users can see the displayed image. This not only wastes power, but also causes uneven brightness in the user's perception under localized strong light, thus reducing the user experience.

[0003] As people continue to pursue better display effects, how to make OLED display panels have a good display effect under strong light has become a key focus and challenge for the industry. Summary of the Invention

[0004] The embodiments of this application provide an OLED display panel and its preparation method and display device. By setting a photoelectric conversion layer on the light-emitting side of the light-emitting substrate, the first photosensitive area in the photoelectric conversion layer is electrically connected to the anode layer of the corresponding light-emitting unit through a thin film transistor, and the second photosensitive area is electrically connected to the cathode layer, providing additional voltage signals to the anode layer and cathode layer in the corresponding light-emitting unit, thereby increasing the brightness of the corresponding light-emitting layer and thus improving the display effect of the OLED display panel.

[0005] In a first aspect, this application provides an OLED display panel, including a light-emitting substrate, a thin-film transistor array layer, and a photoelectric conversion layer. The light-emitting substrate includes multiple light-emitting units, each light-emitting unit including an anode layer, a light-emitting layer, and a cathode layer. The thin-film transistor array layer is disposed on the light-emitting substrate and includes multiple thin-film transistors. Each thin-film transistor includes an active layer, a source and a drain disposed on the active layer, and a gate. The drain is electrically connected to the anode layer. The photoelectric conversion layer is disposed on the light-emitting side of the light-emitting substrate and includes a first photosensitive region and a second photosensitive region. The second photosensitive region is electrically connected to the cathode layer, and the first photosensitive region is electrically connected to the gate. The first and second photosensitive regions are capable of converting light energy into electrical signals under the influence of external light.

[0006] In some embodiments, the photoelectric conversion layer is provided on the side of the thin-film transistor array layer away from the light-emitting substrate.

[0007] In some embodiments, the photoelectric conversion layer includes a glass substrate and a plurality of photosensitive portions and a first insulating layer disposed on the glass substrate. The photosensitive portions include a first photosensitive region and a second photosensitive region. A first conductive via is formed on the first insulating layer to connect the gate and the first photosensitive region.

[0008] In some embodiments, along the thickness direction of the OLED display panel, the photosensitive portion and the orthographic projection of the thin-film transistor on the light-emitting substrate are located between two adjacent light-emitting units.

[0009] In some embodiments, the number of photosensitive parts is equal to the number of light-emitting units, and a plurality of photosensitive parts correspond one-to-one with a plurality of light-emitting units.

[0010] In some embodiments, the number of thin-film transistors is equal to the number of light-emitting units, and a plurality of thin-film transistors correspond one-to-one with a plurality of light-emitting units.

[0011] In some embodiments, a second insulating layer is provided between the thin-film transistor and the anode layer, and a second conductive via is formed on the second insulating layer to connect the anode layer and the drain electrode; there are multiple second conductive vias, each corresponding to a plurality of anode layers, and each anode layer corresponding to a plurality of photosensitive parts; along the thickness direction of the OLED display panel, the orthographic projection of the second conductive via on the light-emitting substrate is located on one side of the first corner of the anode layer, and the orthographic projection of the photosensitive part on the light-emitting substrate is located on the other side of the first corner.

[0012] In some embodiments, a plurality of anode layers are arranged in an array, and cathode layers located in the same row or column are connected to form a strip-shaped cathode strip. The second photosensitive area is strip-shaped, and the second photosensitive area is arranged in the same direction as the cathode strip.

[0013] In some embodiments, the number of cathode strips is the same as the number of second photosensitive areas, and the cathode strips are connected to the second photosensitive areas in a one-to-one correspondence.

[0014] The beneficial effects of the OLED display panel provided in this application are as follows: Compared with the prior art, the OLED display panel provided in this application, by setting a photoelectric conversion layer on the light-emitting side of the light-emitting substrate, includes a first photosensitive area and a second photosensitive area corresponding to the light-emitting unit. The first photosensitive area in the photoelectric conversion layer is electrically connected to the gate of the thin-film transistor, and the drain of the thin-film transistor is electrically connected to the anode of the light-emitting unit. That is, the first photosensitive area is electrically connected to the anode layer of the corresponding light-emitting unit through the thin-film transistor, and the second photosensitive area is electrically connected to the cathode layer. When the OLED display panel is used under sufficient external light, the first and second photosensitive areas can convert light energy into electrical signals under the action of external light, providing additional voltage signals to the anode and cathode layers in the corresponding light-emitting unit, increasing the number of holes in the anode layer and electrons in the cathode layer, thereby increasing the brightness of the corresponding light-emitting layer, which is beneficial to improving the display effect of the OLED display panel.

[0015] Secondly, this application also provides a method for preparing an OLED display panel, used to prepare the OLED display panel described in the first aspect above, the method comprising:

[0016] A photosensitive material is deposited on a glass substrate to form a first photosensitive area and a second photosensitive area;

[0017] A first insulating layer is coated on a glass substrate to cover the first photosensitive area and the second photosensitive area. A first via is formed in the first insulating layer to communicate with the first photosensitive area. A first conductive via is formed by filling the first via with a conductive medium.

[0018] A thin-film transistor array layer is disposed on the first insulating layer, the gate of the thin-film transistor is connected to the first conductive via, and the first photosensitive area is electrically connected to the gate;

[0019] A second insulating layer is provided in the thin film transistor array layer, and a second via is formed in the second insulating layer to communicate with the drain of the thin film transistor. The second via is filled with a conductive dielectric to form a second conductive via.

[0020] An anode layer, a light-emitting layer, and a cathode layer are sequentially stacked on the second insulating layer. The anode layer is connected to the second conductive via, and the cathode layer is electrically connected to the second photosensitive area.

[0021] The beneficial effects of the OLED display panel fabrication method provided in this application are as follows: By setting a photoelectric conversion layer on the light-emitting side of the light-emitting substrate, the photoelectric conversion layer includes a first photosensitive area and a second photosensitive area corresponding to the light-emitting unit. The first photosensitive area in the photoelectric conversion layer is electrically connected to the gate of the thin-film transistor, and the drain of the thin-film transistor is electrically connected to the anode of the light-emitting unit. That is, the first photosensitive area is electrically connected to the anode layer of the corresponding light-emitting unit through the thin-film transistor, and the second photosensitive area is electrically connected to the cathode layer. When the OLED display panel is used under sufficient ambient light, the first and second photosensitive areas can convert light energy into electrical signals under the action of ambient light, providing additional voltage signals to the anode and cathode layers in the corresponding light-emitting unit, increasing the number of holes in the anode layer and electrons in the cathode layer, thereby increasing the brightness of the corresponding light-emitting layer and thus improving the display effect of the OLED display panel.

[0022] Thirdly, this application also provides a display device, including a housing and an OLED display panel as described in the first aspect disposed on the housing.

[0023] The beneficial effects of the display device provided in this application are as follows: by setting a photoelectric conversion layer on the light-emitting side of the light-emitting substrate, the photoelectric conversion layer includes a first photosensitive area and a second photosensitive area corresponding to the light-emitting unit. The first photosensitive area in the photoelectric conversion layer is electrically connected to the gate of the thin-film transistor, and the drain of the thin-film transistor is electrically connected to the anode of the light-emitting unit. That is, the first photosensitive area is electrically connected to the anode layer of the corresponding light-emitting unit through the thin-film transistor, and the second photosensitive area is electrically connected to the cathode layer. When the OLED display panel is used under sufficient ambient light, the first and second photosensitive areas can convert light energy into electrical signals under the action of ambient light, providing additional voltage signals to the anode and cathode layers in the corresponding light-emitting unit, increasing the number of holes in the anode layer and electrons in the cathode layer, thereby increasing the brightness of the corresponding light-emitting layer, which is beneficial to improving the display effect of the display device. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of an OLED display panel provided in Embodiment 1 of this application;

[0026] Figure 2 This is a schematic diagram of the circuit connection structure of an OLED display panel provided in some embodiments of this application;

[0027] Figure 3 for Figure 1 A schematic diagram showing the connection between the light-emitting unit and the thin-film transistor;

[0028] Figure 4 A flowchart illustrating a method for fabricating an OLED display panel according to some embodiments of this application;

[0029] Figure 5 This is a schematic diagram of the OLED display device provided in Embodiment 2 of this application.

[0030] The following are the labeling elements in the figure:

[0031] 100. OLED display panel; 200. Housing;

[0032] 1. Light-emitting layer; 2. Anode layer; 3. Cathode layer; 4. Electron injection layer; 5. Electron transport layer; 6. Hole transport layer; 7. Hole injection layer; 10. Light-emitting substrate; 101. Light-emitting unit;

[0033] 20. Thin-film transistor array layer; 201. Thin-film transistor; 21. Active layer; 22. Drain; 23. Source; 24. Gate; 25. Third insulating layer;

[0034] 30. Photoelectric conversion layer; 301. First photosensitive area; 302. Second photosensitive area; 31. Glass substrate; 32. Photosensitive part; 33. First insulating layer; 330. First conductive via;

[0035] 40. Second insulating layer; 41. Second conductive via;

[0036] 51. Signal line; 52. Data line. Detailed Implementation

[0037] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0038] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0039] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0040] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0041] Example 1

[0042] like Figures 1 to 3 As shown, this application provides an OLED display panel 100, including a light-emitting substrate 10, a thin-film transistor array layer 20, and a photoelectric conversion layer 30. The light-emitting substrate 10 includes a plurality of light-emitting units 101, each of which includes an anode layer 2, a light-emitting layer 1, and a cathode layer 3. The thin-film transistor array layer 20 is disposed on the light-emitting substrate 10 and includes a plurality of thin-film transistors 201. Each thin-film transistor 201 includes an active layer 21, a source 23 and a drain 22 disposed on the active layer 21, and a gate 24. The drain 22 is electrically connected to the anode layer 2. The photoelectric conversion layer 30 is disposed on the light-emitting side of the light-emitting substrate 10 and includes a first photosensitive area 301 and a second photosensitive area 302. The second photosensitive area 302 is electrically connected to the cathode layer 3, and the first photosensitive area 301 is electrically connected to the gate 24. The first photosensitive area 301 and the second photosensitive area 302 can convert light energy into electrical signals under the action of external light.

[0043] The aforementioned light-emitting substrate 10 is an OLED structure. For example... Figure 1 As shown, the light-emitting substrate 10 includes an anode layer 2, a light-emitting layer 1, and a cathode layer 3, as well as an electron injection layer 4 and an electron transport layer 5 disposed between the light-emitting layer 1 and the cathode layer 3, and a hole transport layer 6 and a hole injection layer 7 disposed between the light-emitting layer 1 and the anode layer 2.

[0044] The display principle of the OLED display panel 100 is to use two ITO transparent electrodes as the anode layer 2 and cathode layer 3 of the OLED structure, respectively. Under a certain voltage driving, electrons and holes are injected from the cathode layer 3 and anode layer 2 into the electron transport layer 5 (ETL) and hole transport layer 6 (HTL), respectively, and then migrate to the emission layer 1 (EML). After meeting, they form excitons, which excite the light-emitting molecules, which emit visible light after radiation.

[0045] Normally, the light-emitting substrate 10 can emit light from both sides, that is, the light-emitting substrate 10 can emit light towards both the anode layer 2 and the cathode layer 3. Alternatively, a reflective layer or other light-shielding layer can be provided on the cathode layer 3 to restrict light emission, so that the light generated by the light-emitting substrate 10 only emits light from the anode layer 2 side (e.g., ...). Figure 1 (The direction indicated by the downward-pointing dashed arrow in the diagram) is indicated.

[0046] The aforementioned thin-film transistor array layer 20 is typically connected to the anode layer 2 and cathode layer 3 of the light-emitting substrate 10 to provide driving voltage for the anode layer 2 and cathode layer 3. Therefore, the thin-film transistor array layer 20 is typically disposed on the side of the light-emitting substrate 10 where the anode layer 2 is disposed.

[0047] By providing a photoelectric conversion layer 30 on the light-emitting side of the light-emitting substrate 10, the photoelectric conversion layer 30 includes a first photosensitive area 301 and a second photosensitive area 302. The first photosensitive area 301 in the photoelectric conversion layer 30 is electrically connected to the gate 24 of the thin film transistor 201, and the drain 22 of the thin film transistor 201 is electrically connected to the anode of the light-emitting unit 101. That is, the first photosensitive area 301 is electrically connected to the anode layer 2 of the corresponding light-emitting unit 101 through the thin film transistor 201, and the second photosensitive area 302 is electrically connected to the cathode layer 3. When the OLED display panel 100 is used under sufficient ambient light, the first photosensitive area 301 and the second photosensitive area 302 can convert light energy into electrical signals under the action of ambient light, providing additional voltage signals to the anode layer 2 and cathode layer 3 in the corresponding light-emitting unit 101. This increases the number of holes in the anode layer 2 and electrons in the cathode layer 3, thereby increasing the brightness of the corresponding light-emitting layer 1, which is beneficial to improving the display effect of the OLED display panel 100.

[0048] In the following text, the light-emitting side of the light-emitting substrate 10 is used as an example. Figure 1 Let's take the direction of the downward-pointing dotted arrow in the middle as an example for explanation.

[0049] like Figure 1 As shown, in some embodiments, a photoelectric conversion layer 30 is provided on the side of the thin-film transistor array layer 20 away from the light-emitting substrate 10.

[0050] With the above arrangement, the thin film transistor array layer 20 is located between the light-emitting substrate 10 and the photoelectric conversion layer 30, which not only facilitates the connection of the drain 22 of the thin film transistor 201, but also shortens the connection distance between the first photosensitive area 301 and the gate 24 of the thin film transistor 201, thus facilitating the electrical connection between the first photosensitive area 301 of the photoelectric conversion layer 30 and the drain 22 of the thin film transistor 201, thereby improving the reliability of the OLED display panel 100.

[0051] like Figure 1 As shown, in some embodiments, the photoelectric conversion layer 30 includes a glass substrate 31 and a plurality of photosensitive portions 32 and a first insulating layer 33 disposed on the glass substrate 31. The photosensitive portion 32 includes a first photosensitive area 301 and a second photosensitive area 302. A first conductive via 330 communicating between the gate 24 and the first photosensitive area 301 is formed on the first insulating layer 33.

[0052] The glass substrate 31 mainly serves as a support, while the photosensitive area 32 is usually formed by depositing a photosensitive material on a specific area of ​​the glass substrate 31, or by first depositing a layer of photosensitive material on the glass substrate 31 and then removing the excess photosensitive material through etching or other techniques, thereby forming a first photosensitive area 301 and a second photosensitive area 302 on the glass substrate 31.

[0053] The aforementioned first conductive via 330 enables the gate 24 of the thin-film transistor 201 to be mechanically and electrically connected to the first photosensitive area 301. The first conductive via 330 is formed by opening a via at a specific location in the first insulating layer 33 and then filling the via with a conductive medium.

[0054] With the above configuration, the first photosensitive area 301 and the gate 24 of the thin film transistor 201 are electrically connected through the first conductive via 330. This not only simplifies the process and makes it easy to implement, but also reduces the cost. Furthermore, by separating the first photosensitive area 301, the second photosensitive area 302 and the thin film transistor 201 through the first insulating layer 33, the two are insulated from each other, reducing mutual interference and thus improving the reliability of the OLED display panel 100.

[0055] like Figure 1 As shown, in some embodiments, the number of photosensitive parts 32 is equal to the number of light-emitting units 101, and the plurality of photosensitive parts 32 correspond one-to-one with the plurality of light-emitting units 101. That is, the anode layer 2 and the cathode layer 3 of each light-emitting unit 101 are respectively connected to a first photosensitive area 301 and a second photosensitive area 302.

[0056] With the above settings, the luminous brightness of each light-emitting unit 101 is determined by the rated voltage and the compensation voltage provided by the photosensitive unit 32, regardless of whether the illumination is uniform or partially bright. The photosensitive unit 32 corresponding to each light-emitting unit 101 converts different received light into different electrical signals. Thus, the compensation voltage for each light-emitting unit 101 varies depending on the type of light. This not only improves the brightness of the OLED display panel 100, but also, because the compensation voltages for different light-emitting units 101 differ, the OLED display panel 100 achieves its display effect while reducing driving power consumption. This is particularly suitable for use under partially bright light conditions.

[0057] like Figure 1 As shown, in some embodiments, the number of thin-film transistors 201 is equal to the number of light-emitting units 101, and a plurality of thin-film transistors 201 correspond one-to-one with a plurality of light-emitting units 101.

[0058] With the above settings, each light-emitting unit 101 is driven and controlled by a corresponding thin-film transistor 201. This enables independent control of multiple light-emitting units 101, allowing the brightness of some light-emitting units 101 within the light-emitting substrate 10 to be locally adjusted as needed, so that the OLED display panel 100 has a better display effect, for example, when used under local bright light illumination.

[0059] like Figure 1 As shown, in some embodiments, a second insulating layer 40 is provided between the thin film transistor 201 and the anode layer 2, and a second conductive via 41 connecting the anode layer 2 and the drain 22 is formed on the second insulating layer 40.

[0060] The aforementioned second conductive via 41 enables both mechanical and electrical connection between the drain 22 of the thin-film transistor 201 and the anode layer 2. The second conductive via 41 is formed by creating a via at a specific location on the second insulating layer 40 and then filling the via with a conductive dielectric.

[0061] With the above configuration, the anode layer 2 and the drain 22 of the thin film transistor 201 are electrically connected through the second conductive via 41. This not only simplifies the process and makes it easier to implement, but also reduces the cost. Furthermore, the second insulating layer 40 separates the anode layer 2 from the thin film transistor 201, achieving insulation between the two and reducing their mutual interference, thereby improving the reliability of the OLED display panel 100.

[0062] For example, such as Figure 1As shown, a plurality of second conductive vias 41 are formed on the second insulating layer 40. The number of second conductive vias 41 is the same as the number of thin-film transistors 201, the number of photosensitive parts 32, and the number of light-emitting units 101, and they correspond one-to-one. That is, one second conductive via 41 connects the anode layer 2 of a corresponding light-emitting unit 101 and the drain 22 of a thin-film transistor 201, thus realizing independent control of each light-emitting unit 101.

[0063] like Figure 1 and Figure 2 As shown, along the thickness direction of the OLED display panel, the orthographic projection of the second conductive via 41 onto the light-emitting substrate 10 is located on one side of the first corner of the anode layer 2, and the orthographic projection of the photosensitive part 32 onto the light-emitting substrate 10 is located on the other side of the first corner. That is to say, the orthographic projections of the second conductive via 41 and the photosensitive part 32 onto the light-emitting substrate 10 are both located at the first corner, and their positions do not overlap, so the two do not interfere with each other.

[0064] With the above arrangement, not only are the photosensitive part 32, the second conductive via 41 and the anode layer 2 arranged in the same way, which facilitates the connection of the photosensitive part 32 and the second conductive via 41 to the anode layer 2 respectively, thereby improving the connection reliability, but also the photosensitive part 32, the second conductive via 41 and the anode layer 2 are staggered, which reduces the size of the OLED display panel in the thickness direction, thereby facilitating the thinning of the OLED display panel.

[0065] like Figure 1 As shown, in some embodiments, along the thickness direction of the OLED display panel 100 (e.g., Figure 1 In the vertical direction), the orthographic projection of the photosensitive part 32 and the thin film transistor 201 onto the light-emitting substrate 10 is located between two adjacent light-emitting units 101.

[0066] The above configuration not only enables the photosensitive part 32 and the thin film transistor 201 to be electrically connected to the anode layer 2 and cathode layer 3 of the corresponding light-emitting unit 101, thus realizing the normal light emission of each light-emitting unit 101, but also reduces the impact on the two adjacent light-emitting units 101, which is beneficial to improving the display effect.

[0067] like Figure 2 and Figure 3 As shown, in some embodiments, multiple anode layers 2 are arranged in an array, and cathode layers 3 located in the same row or column are connected to form a strip-shaped cathode strip. The second photosensitive area 302 is strip-shaped, and the second photosensitive area 302 is arranged in the same direction as the cathode strip.

[0068] The overlapping area of ​​the cathode bar and the corresponding anode layer 2 determines the opening of each light-emitting unit 101. In other words, the opening of each light-emitting unit 101 is mainly determined by the corresponding anode layer 2.

[0069] The above configuration simplifies the fabrication process of the cathode layer 3 of the light-emitting substrate 10. Furthermore, the second photosensitive area 302 and the cathode strip are arranged in the same direction, which not only shortens the connection distance between the second photosensitive area 302 and the cathode strip, making it easier for them to be reliably connected, but also connects multiple cathode layers 3 located in the same column or row into a cathode strip, which facilitates the provision of driving voltage to the cathode layer 3 and optimizes the circuit layout of the OLED display panel 100.

[0070] For example, such as Figure 2 As shown, multiple anode layers 2 are arranged in 3 rows and 4 columns, and the first photosensitive area 301 is also arranged in 3 rows and 4 columns. The multiple first photosensitive areas 301 are connected to the multiple anode layers 2 in a one-to-one correspondence. The cathode layers 3 located in the same column are connected to form a cathode strip, that is, it includes 4 cathode strips arranged in columns. The second photosensitive area 302 includes 4, and the second photosensitive area 302 is also arranged in columns.

[0071] Of course, multiple cathode layers 3 located in the same row can be connected to form a cathode strip. In this case, multiple second photosensitive areas 302 are arranged in rows. Alternatively, multiple cathode layers 3 can be unconnected and connected to the corresponding thin-film transistors 201 respectively. No specific limitation is made here.

[0072] like Figure 2 and Figure 3 As shown, in some embodiments, the number of cathode strips is the same as the number of second photosensitive areas 302, and the cathode strips are connected to the second photosensitive areas 302 in a one-to-one correspondence.

[0073] With the above settings, the second photosensitive area 302 can provide voltage to the corresponding cathode strips, that is, multiple cathode layers 3 located in the same column or row, thereby increasing the number of electrons generated by the corresponding cathode layer 3, thus optimizing the circuit layout of the OLED display panel 100.

[0074] like Figure 2 and Figure 3 As shown, the thin-film transistor array layer 20 also includes four signal lines 51 arranged in rows and five data lines 52 arranged in columns. Each signal line 51 is connected to the anode layer 2 located in the same row, and each data line 52 is connected to the cathode strip located in the same column. The data lines 52 and signal lines 51 are arranged in a crisscross pattern between two adjacent light-emitting units 101.

[0075] Example 2

[0076] like Figure 1 and 4 As shown, this application provides a method for manufacturing an OLED display panel 100, comprising:

[0077] S100: A photosensitive material is deposited on a glass substrate 31 to form a first photosensitive area 301 and a second photosensitive area 302;

[0078] S200: A first insulating layer 33 is coated on a glass substrate 31 to cover the first photosensitive area 301 and the second photosensitive area 302. A first via hole communicating with the first photosensitive area 301 is opened in the first insulating layer 33. A first conductive via hole is formed by filling the first via hole with a conductive medium.

[0079] S300: A thin film transistor array layer 20 is disposed on the first insulating layer 33, the gate 24 of the thin film transistor 201 is connected to the first conductive via 330, and the first photosensitive area 301 is electrically connected to the gate 24.

[0080] S400: A second insulating layer 40 is provided in the thin film transistor array layer 20, a second via is formed in the second insulating layer 40 to communicate with the drain 22 of the thin film transistor 201, and a second conductive via 41 is formed by filling the second via with a conductive medium.

[0081] S500: An anode layer 2, a light-emitting layer 1, and a cathode layer 3 are sequentially stacked on the second insulating layer 40. The anode layer 2 is connected to the second conductive via 41, and the cathode layer 3 is electrically connected to the second photosensitive area 302.

[0082] In the above S100, the glass substrate 31 mainly serves as a support. A first photosensitive area 301 and a second photosensitive area 302 are formed by depositing a photosensitive material on the glass substrate 31. This includes depositing the photosensitive material on the glass substrate 31 through a mask to form the first photosensitive area 301 and the second photosensitive area 302, or first depositing a layer of photosensitive material on the glass substrate 31 and removing the excess photosensitive material through etching or other techniques, thereby forming the first photosensitive area 301 and the second photosensitive area 302 on the glass substrate 31.

[0083] In the above S300, the gate 24 and the active layer 21 in the thin-film transistor array layer 20 are separated by a third insulating layer 25. The fabrication process of setting the thin-film transistor array layer 20 on the first insulating layer 33 is as follows: first, a gate 24 layer is set at the position of the first conductive via on the first insulating layer 33; then, a third insulating layer 25 is set on the gate 24 layer; then, an active layer 21 is set; next, a conductive metal layer is set on the active layer 21; and then, corresponding source 23 and drain 22 are formed by etching, thereby forming multiple thin-film transistors 201 and completing the fabrication of the thin-film transistor array layer 20.

[0084] The OLED display panel 100 fabrication method in this embodiment involves setting a photoelectric conversion layer 30 on the side of the thin-film transistor array layer 20 away from the light-emitting substrate 10. The photoelectric conversion layer 30 includes a first photosensitive area 301 and a second photosensitive area 302 corresponding to the light-emitting unit 101. The first photosensitive area 301 in the photoelectric conversion layer 30 is electrically connected to the gate 24 of the thin-film transistor 201, and the drain 22 of the thin-film transistor 201 is electrically connected to the anode of the light-emitting unit 101. That is, the first photosensitive area 301 is electrically connected to the anode layer 2 of the corresponding light-emitting unit 101 through the thin-film transistor 201, and the second photosensitive area 302 is electrically connected to the cathode layer 3. When the OLED display panel 100 is used under sufficient ambient light, the first photosensitive area 301 and the second photosensitive area 302 can convert light energy into electrical signals under the action of ambient light, providing additional voltage signals to the anode layer 2 and cathode layer 3 in the corresponding light-emitting unit 101. This increases the number of holes in the anode layer 2 and electrons in the cathode layer 3, thereby increasing the brightness of the corresponding light-emitting layer 1 and improving the display effect of the display device.

[0085] The method for preparing the OLED display panel 100 in Embodiment 2 is used to prepare the OLED display panel 100 in some embodiments of Embodiment 1. The structure of the OLED display panel 100 in this embodiment is the same as that of the OLED display panel 100 in Embodiment 1, and will not be described again here.

[0086] Example 3

[0087] like Figure 5 As shown, this application also provides a display device, including a housing 200 and an OLED display panel 100 disposed on the housing 200.

[0088] In this embodiment, the display device has a photoelectric conversion layer 30 disposed on the light-emitting side of the light-emitting substrate 10. The photoelectric conversion layer 30 includes a first photosensitive area 301 and a second photosensitive area 302 corresponding to the light-emitting unit 101. The first photosensitive area 301 in the photoelectric conversion layer 30 is electrically connected to the gate 24 of the thin-film transistor 201, and the drain 22 of the thin-film transistor 201 is electrically connected to the anode of the light-emitting unit 101. That is, the first photosensitive area 301 is electrically connected to the anode layer 2 of the corresponding light-emitting unit 101 through the thin-film transistor 201, and the second photosensitive area 302 is electrically connected to the cathode layer 3. When the OLED display panel 100 is used under sufficient ambient light, the first photosensitive area 301 and the second photosensitive area 302 can convert light energy into electrical signals under the action of ambient light, providing additional voltage signals to the anode layer 2 and cathode layer 3 in the corresponding light-emitting unit 101. This increases the number of holes in the anode layer 2 and electrons in the cathode layer 3, thereby increasing the brightness of the corresponding light-emitting layer 1 and thus improving the display effect of the display device.

[0089] In particular, the OLED display panel 100 in the display device of Embodiment 3 has the same structure as the OLED display panel 100 in Embodiment 1, and will not be described again here.

[0090] The above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. An OLED display panel, characterized in that, include: The light-emitting substrate (10) includes multiple light-emitting units (101), wherein the light-emitting unit (101) includes an anode layer (2), a light-emitting layer (1) and a cathode layer (3). A thin-film transistor array layer (20) is disposed on the light-emitting substrate (10). The thin-film transistor array layer (20) includes a plurality of thin-film transistors (201). The thin-film transistor (201) includes an active layer (21), a source (23) and a drain (22) disposed on the active layer (21), and a gate (24). The drain (22) is electrically connected to the anode layer (2). A photoelectric conversion layer (30) is disposed on the light-emitting side of the light-emitting substrate (10). The photoelectric conversion layer (30) includes a first photosensitive area (301) and a second photosensitive area (302). The second photosensitive area (302) is electrically connected to the cathode layer (3), and the first photosensitive area (301) is electrically connected to the gate (24). The first photosensitive area (301) and the second photosensitive area (302) can convert light energy into electrical signals under the action of external light, providing additional voltage signals to the anode layer (2) and the cathode layer (3) in the corresponding light-emitting unit (101), increasing the number of holes in the anode layer (2) and electrons in the cathode layer (3), thereby increasing the brightness of the corresponding light-emitting layer (1).

2. The OLED display panel according to claim 1, characterized in that, The photoelectric conversion layer (30) is provided on the side of the thin-film transistor array layer (20) away from the light-emitting substrate (10).

3. The OLED display panel according to claim 1 or 2, characterized in that, The photoelectric conversion layer (30) includes a glass substrate (31) and a plurality of photosensitive parts (32) and a first insulating layer (33) disposed on the glass substrate (31). The photosensitive parts (32) include a first photosensitive area (301) and a second photosensitive area (302). A first conductive via (330) is formed on the first insulating layer (33) to connect the gate (24) and the first photosensitive area (301).

4. The OLED display panel according to claim 3, characterized in that, Along the thickness direction of the OLED display panel, the orthographic projection of the photosensitive part (32) and the thin film transistor (201) on the light-emitting substrate (10) is located between two adjacent light-emitting units (101).

5. The OLED display panel according to claim 3, characterized in that, The number of photosensitive parts (32) is equal to the number of light-emitting units (101), and each photosensitive part (32) corresponds to a light-emitting unit (101). And / or, the number of thin film transistors (201) is equal to the number of light-emitting units (101), and a plurality of thin film transistors (201) correspond one-to-one with a plurality of light-emitting units (101).

6. The OLED display panel according to claim 4, characterized in that, A second insulating layer (40) is provided between the thin film transistor (201) and the anode layer (2), and a second conductive via (41) is provided on the second insulating layer (40) to connect the anode layer (2) and the drain (22). The number of the second conductive vias (41) is multiple, and the multiple second conductive vias (41) correspond one-to-one with the multiple anode layers (2), and the multiple anode layers (2) correspond one-to-one with the multiple photosensitive parts (32); Along the thickness direction of the OLED display panel, the orthographic projection of the second conductive via (41) on the light-emitting substrate (10) is located on one side of the first corner of the anode layer (2), and the orthographic projection of the photosensitive part (32) on the light-emitting substrate (10) is located on the other side of the first corner.

7. The OLED display panel according to any one of claims 1-2 and 4-6, characterized in that, Multiple anode layers (2) are arranged in an array, and cathode layers (3) located in the same row or column are connected to form a strip-shaped cathode strip. The second photosensitive area (302) is strip-shaped and the second photosensitive area (302) is arranged in the same direction as the cathode strip.

8. The OLED display panel according to claim 7, characterized in that, The number of cathode strips is the same as the number of the second photosensitive areas (302), and the cathode strips are connected to the second photosensitive areas (302) in a one-to-one correspondence.

9. A method for preparing an OLED display panel, used to prepare an OLED display panel as described in any one of claims 5 to 8, characterized in that, The preparation method includes: A photosensitive material is deposited on a glass substrate to form a first photosensitive area and a second photosensitive area; A first insulating layer is coated on a glass substrate to cover the first photosensitive area and the second photosensitive area. A first via is formed in the first insulating layer to communicate with the first photosensitive area. A first conductive via is formed by filling the first via with a conductive medium. A thin-film transistor array layer is disposed on the first insulating layer, the gate of the thin-film transistor is connected to the first conductive via, and the first photosensitive area is electrically connected to the gate; A second insulating layer is provided in the thin film transistor array layer, and a second via is formed in the second insulating layer to communicate with the drain of the thin film transistor. The second via is filled with a conductive dielectric to form a second conductive via. An anode layer, a light-emitting layer, and a cathode layer are sequentially stacked on the second insulating layer. The anode layer is connected to the second conductive via, and the cathode layer is electrically connected to the second photosensitive area.

10. A display device, characterized in that, include: Casing (200) The OLED display panel (100) as described in any one of claims 1 to 8 is disposed on the housing (200).

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