Quantum dot color filter and display

Abstract

The invention discloses a quantum dot color filter and a display. The display comprises a quantum dot color filter and a light-emitting module with a plurality of light-emitting chips. The quantum dot color filter comprises a substrate, a planarization shading layer and a pixel layer. The quantum dot color filter comprises a plurality of pixel areas corresponding to the light-emitting chips, and each pixel area comprises a light-transmitting area and a light-shielding area. The planarization shading layer is arranged on the substrate and used for limiting a shading area of the pixel area. The pixel layer is arranged on the planarization shading layer and comprises a plurality of pixel units. The pixel units are overlapped on the light-transmitting area and partially overlapped on the shading area of the pixel area. In the pixel region, in the vertical projection direction, the area of each pixel unit is larger than that of each light-emitting chip. Therefore, the quantum dot color filter provided by the invention can prevent the problem of incomplete display color conversion caused by offset.

Description

Technical Field

[0001] The present application relates to the field of color filters, and in particular to a display using a quantum dot color filter. Background Art

[0002] In the existing quantum dot color filter with micro-LED, the color filter layer is easily affected by the contour below when it is formed, causing the configuration position to shift, resulting in part of the micro-LED not being covered by the color filter layer. Summary of the invention

[0003] The technical problem to be solved by the present application is to provide a quantum dot color filter that can prevent incomplete display color conversion caused by offset in view of the shortcomings of the prior art.

[0004] In order to solve the above-mentioned technical problems, one of the technical solutions adopted in the present application is to provide a quantum dot color filter and a display. The quantum dot color filter has a plurality of pixel areas corresponding to the light-emitting modules having a plurality of light-emitting chips, and each pixel area includes a light-transmitting area and a light-shielding area. The quantum dot color filter includes a substrate, a planarization light-shielding layer and a pixel layer. The planarization light-shielding layer is arranged on the substrate to define the light-shielding area of ​​each pixel area. The pixel layer is arranged on the planarization light-shielding layer and includes a plurality of pixel units. Each pixel unit overlaps on the light-transmitting area and partially overlaps on the light-shielding area of ​​each pixel area. In each pixel area, in the vertical projection direction, the first area of ​​each pixel unit is greater than the second area of ​​each light-emitting chip.

[0005] Furthermore, the planarized light-shielding layer includes: a light-shielding portion, which is configured to shield each of the light-shielding areas and defines a plurality of light-transmitting openings; and a plurality of light-transmitting portions, which are respectively formed in the plurality of light-transmitting openings to correspond to the plurality of light-transmitting areas.

[0006] Furthermore, each of the light-transmitting portions includes a transparent photoresist material or a yellow photoresist material.

[0007] Furthermore, the yellow photoresist material has an absorption wavelength of light in the range of 400 nanometers to 500 nanometers.

[0008] Furthermore, the yellow photoresist material includes propylene glycol monomethyl ether acetate, polyacrylic acid resin and bismuth vanadium tetroxide.

[0009] Furthermore, the quantum dot color filter further includes a retaining wall structure, which is disposed above the planarized light-shielding layer, corresponds to the light-shielding area and surrounds each of the pixel units.

[0010] Furthermore, the thickness of the retaining wall structure is greater than or equal to the thickness of the pixel layer.

[0011] Furthermore, in each pixel region, the width of the barrier structure is less than or equal to the width of the light shielding portion.

[0012] Furthermore, the retaining wall structure includes one or more of white photoresist, gray photoresist and black photoresist.

[0013] Furthermore, the multiple pixel areas include multiple red pixel areas, multiple green pixel areas and multiple blue pixel areas, and the multiple pixel units include multiple red pixel units corresponding to the multiple red pixel areas, multiple green pixel units corresponding to the multiple green pixel areas and multiple blue pixel units corresponding to the multiple blue pixel areas.

[0014] Furthermore, each of the red pixel units includes a red quantum dot layer, each of the green pixel units includes a green quantum dot layer, and each of the blue pixel units includes a white photoresist layer.

[0015] Furthermore, each of the red pixel units also includes a red filter layer, which is arranged between the red quantum dot layer and the planarization shading layer, each of the green pixel units also includes a green filter layer, which is arranged between the green quantum dot layer and the planarization shading layer, and each of the blue pixel units also includes a blue filter layer, which is arranged between the white photoresist layer and the planarization shading layer.

[0016] Furthermore, the red filter layer includes materials such as propylene glycol monomethyl ether acetate (PGMEA) and heterocyclic compounds having red pigment; the green filter layer includes materials such as propylene glycol monomethyl ether acetate (PGMEA) and heterocyclic compounds having green pigment; and the blue filter layer includes materials such as propylene glycol monomethyl ether acetate (PGMEA) and heterocyclic compounds having blue pigment.

[0017] Furthermore, the particle size of the particles of the red quantum dot layer is in the range of 7 nanometers to 10 nanometers, and the particle size of the particles of the green quantum dot layer is in the range of 3 nanometers to 5 nanometers.

[0018] Furthermore, the quantum dot color filter further includes a protective layer disposed above the pixel layer.

[0019] Furthermore, the first area is in a range of 2 to 3.5 times of the second area.

[0020] In order to solve the above-mentioned technical problems, another technical solution adopted in the present application is a display, comprising: the aforementioned quantum dot color filter; and the light-emitting module, arranged on a light-entering side of the quantum dot color filter, the light-emitting module comprising: a circuit substrate; and a plurality of the light-emitting chips, arranged on the circuit substrate; and one or more light-blocking structures, arranged between every two adjacent light-emitting chips.

[0021] Furthermore, the top surfaces of the plurality of light-emitting chips and the top surfaces of the plurality of light-blocking structures form a first planarized top surface.

[0022] Furthermore, the light emitting module further comprises a transparent protective layer, which is arranged on the upper surface of the circuit substrate and the plurality of light emitting chips.

[0023] Furthermore, the plurality of light-blocking structures are located on the transparent protective layer, and the top surface of the transparent protective layer and the top surfaces of the plurality of light-blocking structures form a second planarized top surface.

[0024] To further understand the features and technical contents of the present application, please refer to the following detailed description and drawings of the present application. However, the drawings provided are only for reference and illustration and are not intended to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a cross-sectional schematic diagram of a display according to the first embodiment of the present application.

[0026] Figure 2 It is a cross-sectional schematic diagram of the quantum dot color filter according to the first embodiment of the present application.

[0027] Figure 3 FIG. 1 is a schematic top view of a quantum dot color filter according to the first embodiment of the present application.

[0028] Figure 4 It is a cross-sectional schematic diagram of a display according to the second embodiment of the present application.

[0029] Figure 5 It is a cross-sectional schematic diagram of a quantum dot color filter according to the second embodiment of the present application.

[0030] Figure 6 It is a cross-sectional schematic diagram of a display according to the third embodiment of the present application.

[0031] Figure 7 It is a cross-sectional schematic diagram of a quantum dot color filter according to the third embodiment of the present application. DETAILED DESCRIPTION

[0032] The following is an explanation of the implementation methods of the "quantum dot color filter, display" disclosed in the present application through specific examples. Those skilled in the art can understand the advantages and effects of the present application from the contents disclosed in this specification. The present application can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present application. In addition, the drawings of the present application are only simple schematic illustrations and are not depicted in actual size. It is stated in advance. The following implementation methods will further explain the relevant technical contents of the present application in detail, but the disclosed contents are not intended to limit the scope of protection of the present application.

[0033] It should be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used herein may include any one or more combinations of the associated listed items depending on the actual situation.

[0034] First embodiment

[0035] Figure 1 It is a cross-sectional schematic diagram of a display according to the first embodiment of the present application. Figure 2 and Figure 3 They are respectively a cross-sectional schematic diagram and a top schematic diagram of the quantum dot color filter of the first embodiment of the present application.

[0036] See also Figure 1 and Figure 2 As shown, the display 1 includes a quantum dot color filter 10 and a light emitting module 20, the quantum dot color filter 10 is arranged above the light emitting module 20, and the quantum dot color filter 10 may include a substrate 11, a planarization light shielding layer 12 and a pixel layer 13. Among them, the quantum dot color filter 10 has a plurality of pixel areas PX, for example, arranged in an array form. Each pixel area PX corresponds to each light emitting chip 22 in the light emitting module 20, and each pixel area PX includes a light-transmitting area TA and a light-shielding area SA. The light-transmitting area TA is surrounded by the light-shielding area SA, preferably located in the middle area of ​​each pixel area PX.

[0037] The substrate 11 is a transparent substrate, which can be selected from a light-transmitting material such as glass or plastic. The flattened light-shielding layer 12 is arranged on the substrate 11, and the flattened light-shielding layer 12 includes a light-transmitting area TA and a light-shielding area SA. In each pixel area PX, the light-shielding portion 120 is arranged corresponding to the light-shielding area SA, and a light-transmitting port is defined, and the light-transmitting portion 121 is formed in the light-transmitting port corresponding to the light-transmitting area TA of the pixel area PX. The light-shielding portion 120 can block light of different colors emitted from adjacent pixels. In the first embodiment, the light-transmitting portion 121 adopts a transparent photoresist material. And because the light-transmitting portion 121 fills the light-transmitting port formed by the light-shielding portion 120, the flattened light-shielding layer 12 has a flat surface that is conducive to the subsequent coating film formation thereon. In other words, the flattened surface makes it easy for the pixel layer 13 subsequently arranged above the flattened light-shielding layer 12 to form a preset shape without being affected by the contour below, especially when a large area is required.

[0038] In this embodiment, the light shielding portion 120 is made of a material with a high carbon black content, such as an oxide containing a black pigment, or more preferably, 5-25% carbon black particles are combined with silicon oxide to improve the light shielding effect. In order to overcome the problem that the film layer with a high carbon black ratio is not easy to expose, the light shielding portion 120 is formed by a lift-off process in this embodiment, and the thickness of the light shielding portion 120 can be accurately controlled to improve the light shielding effect. Through a lift-off process with a single exposure and development step combined with an evaporation and lift-off step, the thickness of the light shielding portion 120 can be accurately controlled within a range of 0.1μm to 3μm, preferably 0.5μm to 2μm. The light-transmitting portion 121 disposed adjacent to the light shielding portion 120 preferably has the same thickness as the light shielding portion 120, thereby forming a planarized light shielding layer 12, so the thickness of the light-transmitting portion 121 is also within a range of 0.1μm to 3μm, preferably 0.5μm to 2μm.

[0039] like Figure 2 As shown, the pixel layer 13 is disposed on the planarized light-shielding layer 12, and has a plurality of pixel units 130, which respectively correspond to the corresponding pixel areas PX in position. In each pixel area PX, the corresponding pixel unit 130 may overlap with the light-transmitting area TA and the light-shielding area SA at the same time; to be more precise, in each pixel area PX, the pixel unit 130 may completely cover the corresponding light-transmitting area TA, but only partially overlap with the light-shielding area SA. The pixel unit 130 may allow the light emitted by the light-emitting module 20 to be absorbed, converted or penetrated by the corresponding pixel unit 130 to generate the expected light color. Furthermore, the pixel layer 13 includes a plurality of pixel units 130, namely a red pixel unit 131, a green pixel unit 132 and a blue pixel unit 133, and the configuration positions are as shown in FIG. Figure 2As shown, the red pixel unit 131 corresponds to the red pixel area RPX, the green pixel unit 132 corresponds to the green pixel area GPX and the blue pixel unit 133 corresponds to the blue pixel area BPX. Each pixel unit is sequentially arranged in an array of the light-transmitting area TA defined by the planarized light-shielding layer 12.

[0040] Specifically, the red pixel unit 131 includes a red quantum dot layer 1311 and a red filter layer 1312, and the red filter layer 1312 is disposed between the red quantum dot layer 1311 and a light-transmitting portion 121 of the planarized light-shielding layer 12. The green pixel unit 132 includes a green quantum dot layer 1321 and a green filter layer 1322, and the green filter layer 1322 is disposed between the green quantum dot layer 1321 and another light-transmitting portion 121 of the planarized light-shielding layer 12. The blue pixel unit 133 includes a white photoresist layer 1331 and a blue filter layer 1332, and the blue filter layer 1332 is disposed between the white photoresist layer 1331 and another light-transmitting portion 121 of the planarized light-shielding layer 12.

[0041] For example, the red filter layer 1312 of the present application includes materials such as propylene glycol monomethyl ether acetate (PGMEA) and heterocyclic compounds with red pigments, which filter the bands other than red light and allow the light in the band of 550-600nm to pass through, thereby presenting red. The green filter layer 1322 includes materials such as propylene glycol monomethyl ether acetate (PGMEA) and heterocyclic compounds with green pigments, which filter the bands other than green light and allow the light in the band of 450-550nm to pass through, thereby presenting green. The blue filter layer 1332 includes materials such as propylene glycol monomethyl ether acetate (PGMEA) and heterocyclic compounds with blue pigments. It filters the bands other than blue light and allows the light in the band of 350-450nm to pass through, thereby presenting blue. Therefore, the problem of reducing the display color gamut and color deviation caused by the mixed output of blue light, red light and green light can be effectively avoided.

[0042] In addition, the red quantum dot layer 1311 and the green quantum dot layer 1321 of the present application each include II-VI, II-V, III-V, III-VI, IV or IV-VI semiconductor materials. In a preferred embodiment of the present application, the particle size range of the red quantum dot layer 1311 particles can be in the range of 7nm to 10nm, and the particle size range of the green quantum dot layer 1321 particles can be in the range of 3nm to 5nm. In a preferred embodiment of the present application, the thickness of the pixel unit 130 can be in the range of 5μm to 10μm.

[0043] The light-emitting module 20 includes a plurality of blue light-emitting chips. In the blue pixel area BPX, the blue pixel unit 133 is provided, that is, it is not necessary to change the wavelength of the blue light emitted by the light-emitting chip, that is, it is not necessary to include a blue quantum dot layer. The blue light of the light-emitting chip directly passes through the light-transmitting portion 121 and is emitted to the human eye, while the red pixel unit 131 and the green pixel unit 132 need to pass through the quantum dot layer of the corresponding color before being transmitted to the human eye, so that the intensity of the blue light received by the human eye is much greater than the intensity of the red light and the green light, resulting in that the overall color of the display 1 cannot achieve the ideal color. Therefore, in the embodiment, in order to make the blue light feel the same intensity as the red light and the green light, a white photoresist layer 1331 is provided on the blue filter layer 1332, so that after the blue light emitted by the light-emitting module 20 passes through the diffusion particles in the white photoresist, the human eye will receive the blue light with the same intensity as the red light and the green light.

[0044] In addition, in each pixel region PX, in the first direction D, the area of ​​the pixel unit 130 is a first area A1, and the light emitting area of ​​each light emitting chip 22 is a second area A2. Figure 3 As shown, in each pixel region PX, the first area A1 of the pixel unit 130 is larger than the second area A2.

[0045] Therefore, the pixel unit 130 of the present application completely covers the light emitting chip 22, which can ensure that the light emitted by the light emitting chip 22 will be converted or absorbed by the pixel unit 130. For example, when the area size of the light emitting chip 22 is 18x36μm2, the first area A1 of the pixel unit 130 can be in the range of 30x50μm2 to 35x55μm2. More preferably, the first area A1 of the pixel unit 130 can be 2.3 times to 2.97 times the second area A2 of the light emitting chip 22. In addition, the pixel unit 130 is a rounded rectangular shape.

[0046] A layer of atomic layer deposition (ALD) is coated on the pixel layer 13 as a protective layer 15 to prevent moisture in the environment from affecting the stability of the quantum dot material layer and to extend the life of the quantum dots. In this embodiment, there is a gap between any two adjacent pixel units 130, and the contour of the protective layer 15 is consistent with the surface contour of the pixel layer 13.

[0047] The quantum dot color filter 10 of this embodiment is transposed and attached to the light emitting module 20 to form a display 1. Figure 1As shown. The light-emitting module 20 of this embodiment includes a circuit substrate 21, a plurality of light-emitting chips 22 and a light-blocking structure 230. A plurality of light-emitting chips 22 are arranged on the circuit substrate 21, and the positions thereof may correspond to the pixel areas PX respectively. For example, the light-emitting chips 22 may be arranged in the form of an array similar to the pixel area PX, and correspond to the pixel area PX in a one-to-one relationship. Among them, a light-blocking structure 230 is arranged between every two adjacent light-emitting chips 22, that is, the light-blocking structure 230 surrounds the light-emitting chip 22, and only the light-emitting area of ​​the light-emitting chip 22 is exposed. The top surfaces of the plurality of light-emitting chips 22 and the top surfaces of the plurality of light-blocking structures 230 form a first planarized top surface. In some embodiments, a dark-colored glue material may be selected for the light-blocking structure 230, and the thickness of the light-blocking structure 230 may be in the range of 4μm to 6μm. Among them, the light-blocking structure 230 may be formed on the circuit substrate 21 by exposure and development, spray capillary phenomenon, molding or lamination.

[0048] Second embodiment

[0049] Please refer to Figure 4 , 5 The second embodiment of the present application further provides a quantum dot color filter 10, including a substrate 11, a planarization shading layer 12, a pixel layer 13, and a retaining wall structure 14, wherein the pixel layer 13 and the retaining wall structure 14 are jointly arranged on the planarization shading layer 12, and in each pixel area PX, the retaining wall structure 14 corresponds to the shading area SA and surrounds the pixel unit 130.

[0050] The red filter layer 1312, the green filter layer 1322 and the blue filter layer 1332 completely cover the corresponding light-transmitting area TA, respectively, that is, they are respectively arranged on the corresponding light-transmitting portion 121 of the planarized light-shielding layer 12, and the retaining wall structure 14 is arranged corresponding to the light-shielding portion 120. Next, the red quantum dot layer 1311, the green quantum dot layer 1321 and the white photoresist layer 1331 are respectively arranged on the red filter layer 1312, the green filter layer 1322 and the blue filter layer 1332, that is, the retaining wall structure 14 surrounds the red pixel unit 131, the green pixel unit 132 and the blue pixel unit 133, and can provide a planarized surface, and the protective layer 15 is coated thereon.

[0051] The retaining wall structure 14 is formed by a photolithography process, and one or more of white photoresist, gray photoresist and black photoresist can be selected. In other words, it can be a light reflecting or light absorbing material or a slightly light-transmitting material. However, the present application is not limited to the examples given above. In this embodiment, because the retaining wall structure 14 uses a material with a lower carbon black content, it is easier to expose than a material with a higher carbon black content, so the thickness of the retaining wall structure 14 can be increased. The thickness DTH of the retaining wall structure 14 is greater than or equal to the thickness CTTH of the pixel layer 13 by default. In other words, the thickness DTH of the retaining wall structure 14 is greater than or equal to the sum of the thickness of the filter layer and the thickness of the quantum dot layer. For example, the thickness of the retaining wall structure 14 is preferably in the range of 5μm to 10μm. And in the pixel area PX, the width of the retaining wall structure 14 is less than or equal to the width of the shading portion 120. Figure 4 The middle retaining wall structure 14 further covers part of the red filter layer 1312, the green filter layer 1322 and the blue filter layer 1332. It is preferred that the red quantum dot layer 1311, the green quantum dot layer 1321 and the white photoresist layer 1331 have the same width as the transparent portion 121. The retaining wall structure 14 has the same width as the shading portion 120 and the same thickness as the pixel layer 13, which can effectively extend the shading effect of the shading portion 120, block the wavelengths of red, green and blue light, and solve the color crosstalk problem between adjacent pixels.

[0052] In addition, if Figure 4As shown, the light-emitting module 20 of the present embodiment includes a circuit substrate 21, a plurality of light-emitting chips 22, a transparent protective layer 23 and a light-blocking structure 230. A plurality of light-emitting chips 22 are arranged on the circuit substrate 21, and the positions thereof may correspond to the pixel areas PX respectively. Therefore, the top surface of the light-emitting module 20 has a transparent protective layer 23 and between every two adjacent light-emitting chips 22, a light-blocking structure 230 may be further arranged in the transparent protective layer 23, and arranged around the light-emitting chip 22. Among them, the light-blocking structure 230 may be formed on the transparent protective layer 23 by exposure and development, spraying capillary phenomenon, molding or lamination. In the present embodiment, a transparent protective layer 23 is first formed on the light-emitting chip 22 and the circuit substrate 21. Then, one or more accommodating spaces are formed inwardly on the surface of the transparent protective layer 23, and the light-blocking structure 230 is filled in, and the light-blocking structure 230 is arranged around the corresponding light-emitting chip 22. The thickness of the light-blocking structure 230 is not greater than the thickness of the transparent protective layer 23, and is greater than or equal to the thickness of the transparent protective layer 23. The thickness of the light-blocking structure 230 must be greater than or equal to one-half the thickness of the light-emitting chip 22. Therefore, in this embodiment, the transparent protective layer 23 not only effectively improves the luminous brightness, but the light-blocking structure 230 disposed around the light-emitting chip 22 can block the problem of crosstalk. The top surface of the transparent protective layer 23, the top surfaces of the plurality of light-emitting chips 22, and the top surfaces of the plurality of light-blocking structures 230 form a second planarized top surface, which facilitates the assembly of the light-emitting module 20 and the quantum dot color filter 10. After the quantum dot color filter 10 is completed, it can be transposed and attached to the light-emitting module 20 to form a display 1.

[0053] Third embodiment

[0054] Figure 6 It is a cross-sectional schematic diagram of a display according to the third embodiment of the present application. Figure 7 It is a cross-sectional schematic diagram of a quantum dot color filter according to the third embodiment of the present application.

[0055] The third embodiment of the present application further provides a display 1. Figure 6As shown, in the display 1, the planarization light shielding layer 12 is formed on the substrate 11, and the light-transmitting portion 121 of the planarization light shielding layer 12 adopts a yellow photoresist material. Since the wavelength range of the absorption light of the yellow photoresist material is 400-500nm, the blue light emitted from the light-emitting chip but not exciting the quantum dot material can be effectively filtered, and the excess blue light can be effectively removed. In the preferred embodiment of the present application, the yellow photoresist is a mixture of propylene glycol monomethyl ether acetate, polyacrylic acid resin and bismuth vanadium tetroxide, wherein the weight percentage of bismuth vanadium tetroxide is in the range of 5% to 20%. In addition to having good adhesion on the glass substrate, the yellow photoresist material has the function of filtering blue light. In addition, in the third embodiment, due to the use of yellow photoresist, the filter layer can be omitted in the subsequent process, and the red quantum dot layer 1311, the green quantum dot layer 1321 and the white photoresist layer 1331 are directly formed on the planarization light shielding layer 12 to reduce the number of process steps, thereby improving production capacity and reducing production costs.

[0056] Advantageous Effects of the Invention

[0057] One of the beneficial effects of the present application is that, compared with traditional color filters, the display with quantum dot color filter provided by the present application can completely cover the light emitting chip because the coverage area A1 of the quantum dot layer and the filter layer of the present application is larger than the light emitting area A2 of the light emitting chip.

[0058] Furthermore, even if the quantum dot color filter is offset from the machine during the exposure and development process, causing the quantum dot layer and the filter layer to be unable to align with the light-emitting chip, because the coverage area of ​​the quantum dot layer and the filter layer is larger than the light-emitting area of ​​the light-emitting chip, the light emitted by the light-emitting module 20 can still be absorbed or converted by the corresponding pixel unit 130 to generate the expected display color.

[0059] The contents disclosed above are only preferred feasible embodiments of the present application, and are not intended to limit the protection scope of the claims of the present application. Therefore, all equivalent technical changes made using the contents of the present application specification and drawings are included in the protection scope of the claims of the present application.

Claims

1. A quantum dot color filter, It is characterized in that The quantum dot color filter has a plurality of pixel areas, each corresponding to a light-emitting module having a plurality of light-emitting chips, and each of the pixel areas includes a light-transmitting area and a light-shielding area. The quantum dot color filter includes: a substrate; a planarized light-shielding layer, disposed on the substrate, for defining the light-shielding area of ​​each pixel region; and a pixel layer, disposed on the planarized light-shielding layer and comprising a plurality of pixel units, wherein each of the pixel units overlaps the light-transmitting area and partially overlaps the light-shielding area of ​​each of the pixel regions; Wherein, in each of the pixel regions, in a vertical projection direction, a first area of ​​each of the pixel units is larger than a second area of ​​each of the light-emitting chips.

2. The quantum dot color filter according to claim 1, It is characterized in that The planarized light shielding layer comprises: a light shielding portion, configured to shield each of the light shielding areas and defining a plurality of light-transmitting openings; and A plurality of light-transmitting portions are respectively formed in the plurality of light-transmitting openings to correspond to the plurality of light-transmitting areas.

3. The quantum dot color filter according to claim 2, It is characterized in that Each of the light-transmitting portions includes a transparent photoresist material or a yellow photoresist material.

4. The quantum dot color filter according to claim 3, It is characterized in that The yellow photoresist material absorbs light of wavelength in the range of 400 nanometers to 500 nanometers.

5. The quantum dot color filter according to claim 3, It is characterized in that The yellow photoresist material includes propylene glycol monomethyl ether acetate, polyacrylic acid resin and bismuth vanadium tetroxide.

6. The quantum dot color filter according to claim 3, It is characterized in that The quantum dot color filter further includes a retaining wall structure, which is arranged above the planarized light-shielding layer, corresponds to the light-shielding area and surrounds each of the pixel units.

7. The quantum dot color filter according to claim 6, It is characterized in that The thickness of the retaining wall structure is greater than or equal to the thickness of the pixel layer.

8. The quantum dot color filter according to claim 6, It is characterized in that In each pixel region, the width of the barrier structure is less than or equal to the width of the light shielding portion.

9. The quantum dot color filter according to claim 6, It is characterized in that The retaining wall structure includes one or more of white photoresist, gray photoresist and black photoresist.

10. The quantum dot color filter according to claim 3, It is characterized in that The plurality of pixel regions include a plurality of red pixel regions, a plurality of green pixel regions, and a plurality of blue pixel regions, and the plurality of pixel units include a plurality of red pixel units respectively corresponding to the plurality of red pixel regions, a plurality of green pixel units respectively corresponding to the plurality of green pixel regions, and a plurality of blue pixel units respectively corresponding to the plurality of blue pixel regions.

11. The quantum dot color filter according to claim 10, It is characterized in that Each of the red pixel units includes a red quantum dot layer, each of the green pixel units includes a green quantum dot layer, and each of the blue pixel units includes a white photoresist layer.

12. The quantum dot color filter according to claim 11, It is characterized in that Each of the red pixel units also includes a red filter layer, which is arranged between the red quantum dot layer and the planarization shading layer. Each of the green pixel units also includes a green filter layer, which is arranged between the green quantum dot layer and the planarization shading layer. Each of the blue pixel units also includes a blue filter layer, which is arranged between the white photoresist layer and the planarization shading layer.

13. The quantum dot color filter according to claim 12, It is characterized in that The red filter layer includes materials such as propylene glycol monomethyl ether acetate and heterocyclic compounds with red pigment; the green filter layer includes materials such as propylene glycol monomethyl ether acetate and heterocyclic compounds with green pigment; the blue filter layer includes materials such as propylene glycol monomethyl ether acetate and heterocyclic compounds with blue pigment.

14. The quantum dot color filter according to claim 11, It is characterized in that The particle size of the particles of the red quantum dot layer is in the range of 7 nanometers to 10 nanometers, and the particle size of the particles of the green quantum dot layer is in the range of 3 nanometers to 5 nanometers.

15. The quantum dot color filter according to claim 1, It is characterized in that The quantum dot color filter further includes a protection layer disposed above the pixel layer.

16. The quantum dot color filter according to claim 1, It is characterized in that The first area is in the range of 2 to 3.5 times the second area.

17. A display, It is characterized in that The display comprises: The quantum dot color filter according to any one of claims 1 to 16; and The light-emitting module is disposed on a light-incident side of the quantum dot color filter, and the light-emitting module includes: a circuit board; and A plurality of the light emitting chips are arranged on the circuit substrate; and One or more light-blocking structures are arranged between every two adjacent light-emitting chips.

18. The display according to claim 17, It is characterized in that The top surfaces of the plurality of light emitting chips and the top surfaces of the plurality of light blocking structures form a first planarized top surface.

19. The display according to claim 17, It is characterized in that The light emitting module further comprises a transparent protective layer, which is arranged on the upper surface of the circuit substrate and the plurality of light emitting chips.

20. The display according to claim 19, It is characterized in that One or more of the light-blocking structures are located on the transparent protective layer, and a top surface of the transparent protective layer and a top surface of the one or more of the light-blocking structures form a second planarized top surface.

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