Controlled NOT Gate Device

Abstract

The present disclosure provides a controlled NOT gate device, which includes a waveguide structure and a phase change material structure; the waveguide structure includes two directional couplers arranged in cascade; the coupling region of each directional coupler is provided with a phase change material structure; the states of the two phase change material structures correspond to the initial states of the control qubit and the target qubit respectively; a directional coupler is used to receive light generated by an external light source; the phase change material structure is used to distribute the output power of the light output from different directional couplers; the output power of the light output by the two directional couplers corresponds to the result state of the control qubit and the target qubit respectively. The present disclosure forms a controlled NOT gate device by combining a phase change material structure with a waveguide structure, which overcomes the problem of high energy loss in the controlled NOT gate device of the prior art, improves energy utilization, improves device performance, and has a small device size, greatly improves integration, and has broad application prospects.

Description

Technical Field

[0001] The present disclosure relates to the technical field of micro-nano optoelectronic components, and in particular to a controlled NOT gate device. Background Art

[0002] With the development of integrated circuits, chips are getting closer and closer to the limits of process manufacturing. Faced with the increasing demand for large-scale data transmission, optical interconnection technology using light as the transmission carrier has begun to emerge. Because of its excellent characteristics such as high-speed transmission rate and anti-electromagnetic interference, it can break through the bottlenecks of electrical interconnection in bandwidth, power consumption, etc. Optical logic devices are the basic components for realizing high-speed and large-capacity optical signal processing in optical interconnection. Among them, reversible logic devices have attracted much attention because they can solve the heat dissipation problem caused by signal bit loss in irreversible logic by matching input and output one by one. Silicon-based photonic technology is compatible with existing complementary metal oxide semiconductor (CMOS) processes, is basically lossless and transparent in the communication band, and has the advantages of broadband, high speed, low power consumption, and easy integration.

[0003] Silicon material is the mainstream integrated optical material. It is compatible with standardized CMOS processes, and the refractive index difference between the SOI (Silicon-On-Insulator) waveguide core and cladding is significant, which has a strong light field confinement capability. In addition, SOI has extremely low absorption loss in most communication bands and can adapt to a variety of application requirements.

[0004] In the field of modern silicon photonics, directional couplers enhance the freedom of optical path selection and can be applied to logic gate devices. A controlled NOT gate device is a logic gate device. However, existing logic gate devices rely on consuming energy to maintain their state, whether on or off. Although the energy consumption per unit of data gradually decreases with the increase in communication rate, this continuous power consumption is still a burden for large switching systems, that is, existing controlled NOT gate devices have the problem of high energy loss. Summary of the invention

[0005] The technical problem to be solved by the present disclosure is to provide a controlled NOT gate device in order to overcome the defect of high energy loss in the controlled NOT gate device in the prior art.

[0006] The present invention solves the above technical problems through the following technical solutions:

[0007] The present disclosure provides a controlled NOT gate device, the controlled NOT gate device comprising a waveguide structure and a phase change material structure;

[0008] The waveguide structure includes two directional couplers arranged in cascade;

[0009] The coupling region of each directional coupler is provided with the phase change material structure;

[0010] The states of the two phase change material structures correspond to the initial states of the control qubit and the target qubit respectively;

[0011] One of the directional couplers is used to receive light generated by an external light source;

[0012] The phase change material structure is used to distribute the output power of the light output from different directional couplers;

[0013] The output powers of the light beams output by the two directional couplers correspond to the result states of the control qubit and the target qubit, respectively.

[0014] Preferably, each of the directional couplers comprises a first waveguide and a second waveguide;

[0015] The second waveguides of the two directional couplers are connected;

[0016] The phase change material structure is provided in a rectangular notch of the second waveguide in the coupling region, wherein the rectangular notch is a notch on a side of the second waveguide opposite to the first waveguide;

[0017] The shape of the first waveguide located in the coupling region and opposite to the second waveguide is a trapezoid.

[0018] Preferably, the two directional couplers are respectively a first directional coupler and a second directional coupler;

[0019] The coupling region of the first directional coupler is provided with a first phase change material structure, and the coupling region of the second directional coupler is provided with a second phase change material structure;

[0020] The state of the first phase-change material structure corresponds to the initial state of the control qubit;

[0021] The state of the second phase-change material structure corresponds to the initial state of the target qubit;

[0022] The second waveguide of the first directional coupler includes a first end, the first waveguide of the first directional coupler includes a second end, and the second waveguide of the second directional coupler includes a third end;

[0023] The first end is an end of the second waveguide of the first directional coupler far from the second directional coupler, the second end is an end of the first waveguide of the first directional coupler close to the second directional coupler, and the third end is an end of the second waveguide of the second directional coupler far from the first directional coupler;

[0024] The first end is used to receive the light;

[0025] The second end is used to output the light, and the output power of the light output by the second end corresponds to the result state of the control qubit;

[0026] The third end is used to output the light, and the output power of the light output by the third end corresponds to the result state of the target quantum bit.

[0027] Preferably, the width of the first waveguide and the second waveguide is 500 nm, and the height of the first waveguide and the second waveguide is 220 nm;

[0028] The upper base of the trapezoid is 4.6 μm, the lower base is 6.6 μm, and the height is 1 μm;

[0029] The light source mode of the external light source is TM (Transverse Magnetic) mode, and the wavelength of the light is 1550 nm.

[0030] Preferably, the phase change material structure is in the shape of a cuboid, wherein the length of the cuboid is 4.6 μm, the width is 100 nm, and the height is 220 nm;

[0031] The material of the phase change material structure is Sb 2 S 3 (Antimony sulfide).

[0032] Preferably, each of the directional couplers comprises a third waveguide, a fourth waveguide and a fifth waveguide arranged in sequence;

[0033] The phase change material structure covers the outside of the third waveguide and the fifth waveguide in the coupling region.

[0034] Preferably, the two directional couplers are respectively a third directional coupler and a fourth directional coupler;

[0035] The coupling region of the third directional coupler is provided with a first phase change material structure, and the coupling region of the fourth directional coupler is provided with a second phase change material structure;

[0036] The state of the first phase-change material structure corresponds to the initial state of the control qubit;

[0037] The state of the second phase-change material structure corresponds to the initial state of the target qubit;

[0038] The third waveguide of the third directional coupler includes a fourth end, the fourth waveguide of the third directional coupler includes a fifth end, the fifth waveguide of the third directional coupler includes a sixth end, the third waveguide of the fourth directional coupler includes a seventh end, and the fourth waveguide of the fourth directional coupler includes an eighth end;

[0039] The fourth end is connected to the eighth end, the fifth end is an end of the fourth waveguide of the third directional coupler far away from the fourth directional coupler, the sixth end is an end of the fifth waveguide of the third directional coupler close to the fourth directional coupler, and the seventh end is an end of the third waveguide of the fourth directional coupler far away from the third directional coupler;

[0040] The fifth part is used to receive the light;

[0041] The seventh end is used to output the light, and the output power of the light output by the seventh end corresponds to the result state of the control qubit;

[0042] The sixth end is used to output the light, and the output power of the light output by the sixth end corresponds to the result state of the target quantum bit.

[0043] Preferably, the width of the fourth waveguide is 0.6 μm, the width of the third waveguide and the fifth waveguide is 0.51 μm, and the height of the third waveguide, the fourth waveguide and the fifth waveguide is 0.22 μm;

[0044] The length of the coupling region is 12 μm;

[0045] The light source mode of the external light source is TE (Transverse Electric) mode, and the wavelength of the light is 1550 nm.

[0046] Preferably, the phase change material structure is in the shape of a cuboid, wherein the length of the cuboid is 12 μm, the width is 0.44 μm, and the thickness is 0.05 μm;

[0047] The material of the phase change material structure is Sb 2 Se 3 (Antimony selenide).

[0048] Preferably, the controlled NOT gate device further comprises a substrate layer, the material of the substrate layer is SiO 2 (Silicon dioxide);

[0049] and / or,

[0050] The controlled NOT gate device further comprises a cladding layer, which is used to wrap the waveguide structure and the phase change material structure. The material of the cladding layer is SiO 2 ;

[0051] and / or,

[0052] The material of the waveguide structure is Si (silicon).

[0053] On the basis of being in accordance with the common sense in the art, the above-mentioned preferred conditions can be arbitrarily combined to obtain the preferred embodiments of the present disclosure.

[0054] The positive and progressive effects of this disclosure are:

[0055] The present invention forms a controlled NOT gate device by combining a phase change material structure with a waveguide structure, thereby overcoming the problem of high energy loss in the controlled NOT gate device of the prior art, improving energy utilization, and improving device performance. In addition, the device size is small, the integration level is greatly improved, and it has broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Figure 1 Schematic diagram of the structure of the controlled NOT gate device of Example 1 of the present disclosure.

[0057] Figure 2 This is a first structural schematic diagram of the controlled NOT gate device of Example 2 of the present disclosure.

[0058] Figure 3 It is a structural schematic diagram of the coupling region in the first structure of the controlled NOT gate device of Example 2 of the present disclosure.

[0059] Figure 4 This is a second structural schematic diagram of the controlled NOT gate device of Example 2 of the present disclosure.

[0060] Figure 5 It is a structural schematic diagram of the coupling region in the second structure of the controlled NOT gate device of Example 2 of the present disclosure. DETAILED DESCRIPTION

[0061] The present disclosure is further described below by way of examples, but the present disclosure is not limited to the scope of the examples.

[0062] Prefixes such as "first" and "second" are used in the embodiments of the present disclosure only to distinguish different description objects, and have no limiting effect on the position, order, priority, quantity or content of the described objects. The use of prefixes such as ordinal numbers to distinguish description objects in the embodiments of the present disclosure does not constitute a limitation on the described objects. For the statement of the described objects, please refer to the description in the context of the claims or embodiments, and no unnecessary limitation should be constituted due to the use of such prefixes. In addition, in the description of the present embodiment, unless otherwise specified, the meaning of "plurality" is two or more.

[0063] In the embodiments of the present disclosure, the collection, storage, use, processing, transmission, provision and disclosure of user personal information involved are in compliance with the provisions of relevant laws and regulations and do not violate public order and good morals.

[0064] Example 1

[0065] This embodiment provides a controlled NOT gate device, such as Figure 1 As shown, the controlled NOT gate device includes a waveguide structure 1 and a phase change material structure 2;

[0066] The waveguide structure 1 comprises two directional couplers arranged in cascade;

[0067] A phase change material structure 2 is provided in the coupling region of each directional coupler;

[0068] The states of the two phase change material structures 2 correspond to the initial states of the control qubit and the target qubit respectively;

[0069] A directional coupler is used to receive light generated by an external light source;

[0070] The phase change material structure 2 is used to distribute the output power of light output from different directional couplers;

[0071] The output powers of the light output by the two directional couplers correspond to the resulting states of the control qubit and the target qubit, respectively.

[0072] Specifically, the state of the phase change material can be switched between a crystalline state and an amorphous state, and the refractive indexes are different in the two states. The directional coupler cooperates with the phase change material structure to achieve different distributions of optical power.

[0073] In this embodiment, a controlled NOT gate device is formed by combining a phase change material structure with a waveguide structure, which overcomes the problem of high energy loss in the controlled NOT gate device of the prior art, improves energy utilization, improves device performance, and has a small device size, greatly improving integration, and has broad application prospects.

[0074] Example 2

[0075] This embodiment provides a controlled NOT gate device, which is a further improvement on the first embodiment.

[0076] In one feasible solution, Figure 2 As shown, each directional coupler 11 includes a first waveguide 111 and a second waveguide 112;

[0077] The second waveguides 112 of the two directional couplers 11 are connected;

[0078] The phase change material structure 2 is disposed in a rectangular notch of the second waveguide 112 in the coupling region, and the rectangular notch is a notch on the side of the second waveguide 112 opposite to the first waveguide 111;

[0079] The shape of the first waveguide 111 in the coupling region, which is opposite to the second waveguide 112 , is a trapezoid.

[0080] Specifically, Figure 2 As shown, the first waveguide and the second waveguide are arranged up and down, with the first waveguide at the top and the second waveguide at the bottom. Figure 3 As shown, a trapezoidal structure extends above the first waveguide, a rectangular gap is formed above the second waveguide, and the phase change material structure is rectangular and fills the gap.

[0081] If the two waveguides of the directional coupler are not provided with a phase change material structure, the effective refractive index of the two waveguides is equal, and they will be fully coupled, and different distributions of optical power will not be achieved. The state of the phase change material can be switched between the crystalline state and the amorphous state, and the refractive index is different in the two states. By changing the refractive index of the phase change material structure of the second waveguide, different coupling effects can be generated, and different distributions of optical power can be achieved.

[0082] In this solution, a phase change material structure is set in the gap on the side opposite to the first waveguide in the second waveguide, a trapezoid is set in the first waveguide opposite to the second waveguide, and a directional coupler cooperates with the phase change material structure to achieve different distributions of optical power, thereby realizing a controlled NOT gate function.

[0083] In an implementable solution, the two directional couplers 11 are respectively a first directional coupler 12 and a second directional coupler 13;

[0084] A first phase change material structure is provided in a coupling region of the first directional coupler 12, and a second phase change material structure is provided in a coupling region of the second directional coupler 13;

[0085] The state of the first phase change material structure corresponds to the initial state of the control qubit;

[0086] The state of the second phase change material structure corresponds to the initial state of the target qubit;

[0087] The second waveguide 112 of the first directional coupler 12 includes a first end 1121 , the first waveguide 111 of the first directional coupler 12 includes a second end 1111 , and the second waveguide 112 of the second directional coupler 13 includes a third end 1122 ;

[0088] The first end 1121 is an end of the second waveguide 112 of the first directional coupler 12 away from the second directional coupler 13, the second end 1111 is an end of the first waveguide 111 of the first directional coupler 12 close to the second directional coupler 13, and the third end 1122 is an end of the second waveguide 112 of the second directional coupler 13 away from the first directional coupler 12;

[0089] The first end 1121 is used to receive light;

[0090] The second end 1111 is used to output light, and the output power of the light output by the second end 1111 corresponds to the result state of the control qubit;

[0091] The third end 1122 is used to output light, and the output power of the light output by the third end 1122 corresponds to the result state of the target quantum bit.

[0092] Specifically, the state of the phase change material is set to the initial position, that is, the initial state. The initial position is artificially controlled, the crystalline state is 1, and the amorphous state is 0. The state of the first phase change material structure corresponds to the initial state of the control qubit, and the state of the second phase change material structure corresponds to the initial state of the target qubit.

[0093] like Figure 2 As shown, light is input from the left by a straight waveguide, which is the second waveguide. The state of the top output port, that is, the second end, is the result state of the control qubit. The state of the bottom output port, that is, the third end, is the result state of the target qubit. For example, if the input power is set to 1, the result state of the control qubit is 1 when the output power of the second end is 0.2, and the result state of the control qubit is 0 when the output power of the second end is 0.4. The result state of the target qubit is 1 when the output power of the third end is 0.34, otherwise it is 0. If it is 0, the output power is other than 0.34. This example is shown in the following table.

[0094]

[0095] In this scheme, the states of the two phase-change material structures are used as the initial states of the control qubit and the target qubit respectively. The phase-change material structure changes the thickness of the waveguide, thereby changing the refractive index of the light, achieving different distributions of the optical power, and thus realizing the controlled NOT gate function.

[0096] In an operative solution, the width of the first waveguide 111 and the second waveguide 112 is 500 nm, and the height of the first waveguide 111 and the second waveguide 112 is 220 nm;

[0097] The upper base of the trapezoid is 4.6 μm, the lower base is 6.6 μm, and the height is 1 μm;

[0098] The light source mode of the external light source is TM mode, and the wavelength of the light is 1550nm.

[0099] In this solution, the waveguide size is set to adapt to the light source mode of the external light source, thereby achieving different distributions of optical power and further realizing the controlled NOT gate function.

[0100] In an implementable solution, the phase change material structure 2 is in the shape of a cuboid, and the length of the cuboid is 4.6 μm, the width is 100 nm, and the height is 220 nm;

[0101] The material of phase change material structure 2 is Sb 2 S 3 .

[0102] In this solution, by setting the shape of the phase change material structure to a rectangular parallelepiped, a non-volatile phase change material whose refractive index changes in the crystalline and amorphous states is set, different distributions of optical power are achieved, thereby realizing a low-power controlled NOT gate function.

[0103] In one feasible solution, Figure 4 As shown, each directional coupler 11 includes a third waveguide 113, a fourth waveguide 114 and a fifth waveguide 115 which are arranged in sequence;

[0104] The phase change material structure 2 covers the outside of the third waveguide 113 and the fifth waveguide 115 in the coupling region.

[0105] Specifically, Figure 4 As shown, each directional coupler is a three-waveguide structure, and the coupling power of the third waveguide and the fifth waveguide is the same. The third waveguide, the fourth waveguide and the fifth waveguide are arranged in the same plane. Figure 5 As shown, the phase change material structure is in the form of a thin film, covering the same plane of the third waveguide and the fifth waveguide.

[0106] In this solution, by arranging a phase change material structure on the same surface of the third waveguide and the fifth waveguide, the directional coupler cooperates with the phase change material structure to achieve different distributions of optical power, thereby realizing a controlled NOT gate function.

[0107] In an implementable solution, the two directional couplers 11 are respectively a third directional coupler 14 and a fourth directional coupler 15;

[0108] The coupling region of the third directional coupler 14 is provided with a first phase change material structure, and the coupling region of the fourth directional coupler 15 is provided with a second phase change material structure;

[0109] The state of the first phase change material structure corresponds to the initial state of the control qubit;

[0110] The state of the second phase change material structure corresponds to the initial state of the target qubit;

[0111] The third waveguide 113 of the third directional coupler 14 includes a fourth end 1131, the fourth waveguide 114 of the third directional coupler 14 includes a fifth end 1141, the fifth waveguide 115 of the third directional coupler 14 includes a sixth end 1151, the third waveguide 113 of the fourth directional coupler 15 includes a seventh end 1132, and the fourth waveguide 114 of the fourth directional coupler 15 includes an eighth end 1142;

[0112] The fourth end 1131 is connected to the eighth end 1142, the fifth end 1141 is an end of the fourth waveguide 114 of the third directional coupler 14 far from the fourth directional coupler 15, the sixth end 1151 is an end of the fifth waveguide 115 of the third directional coupler 14 close to the fourth directional coupler 15, and the seventh end 1132 is an end of the third waveguide 113 of the fourth directional coupler 15 far from the third directional coupler 14;

[0113] The fifth end 1141 is used to receive light;

[0114] The seventh terminal 1132 is used to output light, and the output power of the light output by the seventh terminal 1132 corresponds to the result state of the control qubit;

[0115] The sixth end 1151 is used to output light, and the output power of the light output by the sixth end 1151 corresponds to the result state of the target quantum bit.

[0116] Specifically, the state of the phase change material is set to the initial position, that is, the initial state. The initial position is artificially controlled, the crystalline state is 0, and the amorphous state is 1. The state of the first phase change material structure corresponds to the initial state of the control qubit, and the state of the second phase change material structure corresponds to the initial state of the target qubit.

[0117] like Figure 4As shown, light is input from the left by the middle waveguide, which is the fourth waveguide. The state of the top output port, that is, the sixth end, is the result state of the target qubit. The state of the bottom output port, that is, the seventh end, is the result state of the control qubit. For example, when the input power is set to 1, the result state of the control qubit is 0 when the output power of the seventh end is 0, and the result state of the control qubit is 1 when the output power of the seventh end is 0. When the output power of the sixth end is 0.3, the result state of the target qubit is 1, and when the output power of the sixth end is 0.5 or 0.2, the result state of the target qubit is 0. This example is shown in the following table.

[0118]

[0119] In this scheme, the states of the two phase-change material structures are used as the initial states of the control qubit and the target qubit respectively. The phase-change material structure changes the thickness of the waveguide, thereby changing the refractive index of the light, achieving different distributions of the optical power, and thus realizing the controlled NOT gate function.

[0120] In an implementable solution, the width of the fourth waveguide 114 is 0.6 μm, the width of the third waveguide 113 and the fifth waveguide 115 is 0.51 μm, and the height of the third waveguide 113, the fourth waveguide 114 and the fifth waveguide 115 is 0.22 μm;

[0121] The length of the coupling region is 12 μm;

[0122] The light source mode of the external light source is TE, and the wavelength of the light is 1550nm.

[0123] In this solution, the waveguide size is set to adapt to the light source mode of the external light source, thereby achieving different distributions of optical power and further realizing the controlled NOT gate function.

[0124] In an implementable solution, the phase change material structure 2 is in the shape of a cuboid, the length of the cuboid is 12 μm, the width is 0.44 μm, and the thickness is 0.05 μm;

[0125] The material of phase change material structure 2 is Sb 2 Se 3 .

[0126] Specifically, the phase change material structure is a rectangular parallelepiped, just covering the coupling area, with its center aligned with the center of the silicon waveguide, and the third waveguide and the fifth waveguide both cover the phase change material structure.

[0127] In this solution, by setting the shape of the phase change material structure to a rectangular parallelepiped, a non-volatile phase change material whose refractive index changes in the crystalline and amorphous states is set, different distributions of optical power are achieved, thereby realizing a low-power controlled NOT gate function.

[0128] In one feasible solution, Figure 1 As shown, the controlled NOT gate device further includes a substrate layer 3, the material of the substrate layer 3 is SiO 2 The controlled NOT gate device also includes a cladding layer, which is used to wrap the waveguide structure 1 and the phase change material structure 2, and the material of the cladding layer is SiO 2 ; The material of waveguide structure 1 is Si.

[0129] Specifically, the cladding layer covers the surface of the waveguide structure, and the cladding layer and the substrate layer together wrap the waveguide layer.

[0130] In this solution, a complete controlled NOT gate device is formed by setting a cladding layer and a substrate layer, thereby ensuring the reliability of the device.

[0131] In this embodiment, a controlled NOT gate device is formed by combining a phase change material structure with a waveguide structure, which overcomes the problem of high energy loss in the controlled NOT gate device of the prior art, improves energy utilization, improves device performance, and has a small device size, greatly improving integration, and has broad application prospects.

[0132] Although the specific embodiments of the present disclosure are described above, those skilled in the art should understand that this is only an example, and the protection scope of the present disclosure is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present disclosure, but these changes and modifications all fall within the protection scope of the present disclosure.

Claims

1. A controlled NOT gate device, characterized in that: The controlled NOT gate device comprises a waveguide structure and a phase change material structure; The waveguide structure includes two directional couplers arranged in cascade; The coupling region of each directional coupler is provided with the phase change material structure; The states of the two phase change material structures correspond to the initial states of the control qubit and the target qubit respectively; One of the directional couplers is used to receive light generated by an external light source; The phase change material structure is used to distribute the output power of the light output from different directional couplers; The output powers of the light beams output by the two directional couplers correspond to the result states of the control qubit and the target qubit, respectively.

2. The controlled NOT gate device according to claim 1, characterized in that: Each of the directional couplers includes a first waveguide and a second waveguide; The second waveguides of the two directional couplers are connected; The phase change material structure is provided in a rectangular notch of the second waveguide in the coupling region, wherein the rectangular notch is a notch on a side of the second waveguide opposite to the first waveguide; The shape of the first waveguide located in the coupling region and opposite to the second waveguide is a trapezoid.

3. The controlled NOT gate device according to claim 2, characterized in that: The two directional couplers are respectively a first directional coupler and a second directional coupler; The coupling region of the first directional coupler is provided with a first phase change material structure, and the coupling region of the second directional coupler is provided with a second phase change material structure; The state of the first phase-change material structure corresponds to the initial state of the control qubit; The state of the second phase-change material structure corresponds to the initial state of the target qubit; The second waveguide of the first directional coupler includes a first end, the first waveguide of the first directional coupler includes a second end, and the second waveguide of the second directional coupler includes a third end; The first end is an end of the second waveguide of the first directional coupler far from the second directional coupler, the second end is an end of the first waveguide of the first directional coupler close to the second directional coupler, and the third end is an end of the second waveguide of the second directional coupler far from the first directional coupler; The first end is used to receive the light; The second end is used to output the light, and the output power of the light output by the second end corresponds to the result state of the control qubit; The third end is used to output the light, and the output power of the light output by the third end corresponds to the result state of the target quantum bit.

4. The controlled NOT gate device according to claim 3, characterized in that: The width of the first waveguide and the second waveguide is 500 nm, and the height of the first waveguide and the second waveguide is 220 nm; The upper base of the trapezoid is 4.6 μm, the lower base is 6.6 μm, and the height is 1 μm; The light source mode of the external light source is TM mode, and the wavelength of the light is 1550nm.

5. The controlled NOT gate device according to any one of claims 2 to 4, characterized in that: The phase change material structure is in the shape of a cuboid, wherein the length of the cuboid is 4.6 μm, the width is 100 nm, and the height is 220 nm; The material of the phase change material structure is Sb2S3.

6. The controlled NOT gate device according to claim 1, characterized in that: Each of the directional couplers comprises a third waveguide, a fourth waveguide and a fifth waveguide arranged in sequence; The phase change material structure covers the outside of the third waveguide and the fifth waveguide in the coupling region.

7. The controlled NOT gate device according to claim 6, characterized in that: The two directional couplers are respectively a third directional coupler and a fourth directional coupler; The coupling region of the third directional coupler is provided with a first phase change material structure, and the coupling region of the fourth directional coupler is provided with a second phase change material structure; The state of the first phase-change material structure corresponds to the initial state of the control qubit; The state of the second phase-change material structure corresponds to the initial state of the target qubit; The third waveguide of the third directional coupler includes a fourth end, the fourth waveguide of the third directional coupler includes a fifth end, the fifth waveguide of the third directional coupler includes a sixth end, the third waveguide of the fourth directional coupler includes a seventh end, and the fourth waveguide of the fourth directional coupler includes an eighth end; The fourth end is connected to the eighth end, the fifth end is an end of the fourth waveguide of the third directional coupler far away from the fourth directional coupler, the sixth end is an end of the fifth waveguide of the third directional coupler close to the fourth directional coupler, and the seventh end is an end of the third waveguide of the fourth directional coupler far away from the third directional coupler; The fifth end is used to receive the light; The seventh end is used to output the light, and the output power of the light output by the seventh end corresponds to the result state of the control qubit; The sixth end is used to output the light, and the output power of the light output by the sixth end corresponds to the result state of the target quantum bit.

8. The controlled NOT gate device according to claim 7, characterized in that: The width of the fourth waveguide is 0.6 μm, the width of the third waveguide and the fifth waveguide is 0.51 μm, and the height of the third waveguide, the fourth waveguide and the fifth waveguide is 0.22 μm; The length of the coupling region is 12 μm; The light source mode of the external light source is TE mode, and the wavelength of the light is 1550nm.

9. The controlled NOT gate device according to any one of claims 6 to 8, characterized in that: The phase change material structure is in the shape of a cuboid, wherein the length of the cuboid is 12 μm, the width is 0.44 μm, and the thickness is 0.05 μm; The material of the phase change material structure is Sb2Se3.

10. The controlled NOT gate device according to claim 1, characterized in that: The controlled NOT gate device further comprises a substrate layer, and the material of the substrate layer is SiO2; and / or, The controlled NOT gate device further comprises a cladding layer, the cladding layer is used to wrap the waveguide structure and the phase change material structure, and the material of the cladding layer is SiO2; and / or, The material of the waveguide structure is Si.

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