Method and system for optical proximity correction of ion implantation layer layout

Abstract

The application discloses an ion implantation layer layout optical proximity correction method and system, and belongs to the technical field of semiconductors. The ion implantation layer layout optical proximity correction method comprises the following steps: providing an ion implantation area of a layout to be corrected; correcting a local position of the ion implantation area of the layout, wherein the critical dimension of the local position is smaller than a required dimension; growing a correction pattern at the two side boundaries of the local position to increase the width of the local position; and expanding each correction pattern step by step outward: the correction pattern is expanded step by step outward by a preset distance along a predetermined direction, the distance between the correction pattern and an active area is detected after each expansion step, and if the distance between the correction pattern and the active area is greater than a safe distance, the correction pattern is continuously expanded. By separately expanding each correction pattern step by step during OPC correction, the size of the two-dimensional CD of the ion implantation area of the layout is ensured to be safe, a safe distance is maintained from the active area, the amount of calculation is reduced, and the publishing efficiency is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method and system for correcting optical proximity effect of an ion implantation layer pattern. Background Art

[0002] In the Optical Proximity Correction (OPC) program, corrections to layout patterns with small 2D CDs (critical dimensions) of the ion implant area (implant) are typically made by moving the pattern a fixed distance within a fixed range to ensure that the 2D CD of the implant area meets the specified dimensions. However, this method has a significant drawback: since the distances between the implant area and the adjacent active area (AA) vary, while the shift value of the implant boundary is fixed, the distances between the edges of the expanded implant area and the adjacent active area are necessarily different. This can lead to situations where the edges of the expanded implant area are too close to the active area. This problem requires specific corrections, followed by verification, and this cycle is repeated until all violating patterns are corrected. While this method can achieve the desired results, the entire program is computationally intensive and time-consuming.

[0003] It should be noted that the information disclosed in the background technology section of the invention is only intended to deepen the understanding of the general background technology of the invention, and should not be regarded as an admission or any form of implication that the information constitutes prior art already known to those skilled in the art. Summary of the Invention

[0004] The object of the present invention is to provide a method and system for correcting the optical proximity effect of an ion implantation layer pattern, so as to solve the problem that the correction method is complicated.

[0005] To solve the above technical problems, the present invention provides a method for correcting the optical proximity effect of an ion implantation layer layout, providing an ion implantation area of ​​the layout to be corrected, and correcting the local position of the ion implantation area of ​​the layout where the critical dimension is smaller than the required dimension:

[0006] Growing correction patterns at both side boundaries of the local position to increase the width of the local position;

[0007] Each of the correction patterns is expanded outward in steps: the correction pattern is gradually expanded outward by a preset distance along a predetermined direction, and the distance between the correction pattern and the active area is detected after each step of expansion. If the distance between the correction pattern and the active area is greater than the safety distance, the correction pattern is continued to be expanded.

[0008] Preferably, if the distance between the correction pattern and the active area is less than the safety distance, the expansion of the correction pattern is stopped, and the expansion result of the correction pattern in the previous step is retained.

[0009] Preferably, when the critical dimension of the local position is greater than or equal to the required dimension, the expansion of the correction pattern is stopped.

[0010] Preferably, the side of the correction pattern away from the local position has a first outer side and a second outer side that are perpendicular to each other.

[0011] Preferably, the correction figure is a polygon.

[0012] Preferably, the correction figure is a rectangle.

[0013] Based on the same technical concept, the present disclosure also provides an optical proximity effect correction system for an ion implantation layer pattern, comprising:

[0014] A detection module is used to obtain a local position where a critical dimension of an ion implantation region of a layout to be corrected is smaller than a required dimension;

[0015] A graphics module, configured to grow correction graphics at both side boundaries of the local position to increase the width of the local position;

[0016] an expansion module, configured to expand each of the correction patterns outward in steps: the correction pattern is gradually expanded outward by a preset distance along a predetermined direction, and the distance between the correction pattern and the active area is detected after each step of expansion. If the distance between the correction pattern and the active area is greater than a safe distance, the correction pattern is continued to be expanded; if the distance between the correction pattern and the active area is less than the safe distance, the correction pattern is stopped from being expanded, and the expansion result of the correction pattern in the previous step is retained.

[0017] Preferably, when the critical dimension of the local position is greater than or equal to a desired dimension, the growth of the correction pattern is stopped.

[0018] Preferably, the side of the correction pattern away from the local position has a first outer side and a second outer side that are perpendicular to each other.

[0019] Preferably, the correction figure is a polygon.

[0020] The optical proximity effect correction method for the ion implantation layer layout provided by the present invention ensures the safety of the two-dimensional CD size of the ion implantation area of ​​the layout by individually expanding each correction pattern in steps during OPC correction, while maintaining a safe distance from the active area, reducing the amount of calculation and improving publishing efficiency.

[0021] The optical proximity effect correction system for the ion implantation layer pattern provided by the present invention and the optical proximity effect correction method for the ion implantation layer pattern provided by the present invention belong to the same inventive concept. Therefore, the optical proximity effect correction system for the ion implantation layer pattern provided by the present invention has at least all the advantages of the optical proximity effect correction method for the ion implantation layer pattern provided by the present invention, which will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Those skilled in the art will appreciate that the accompanying drawings are provided for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention.

[0023] Figure 1 This is a schematic diagram of a layout that requires OPC correction in the prior art;

[0024] Figure 2 It is a schematic diagram of performing OPC correction on the ion implantation area of ​​the layout in the prior art;

[0025] Figure 3 Schematic diagram of performing OPC correction on the ion implantation area of ​​a layout according to one embodiment of the present invention;

[0026] Figure 4 is a flow chart of an embodiment of the present invention.

[0027] In the attached figure:

[0028] 100, active area; 200, layout ion implantation area; 300, target ion implantation area. DETAILED DESCRIPTION

[0029] To make the objects, advantages, and features of the present invention more clearly apparent, the present invention is further described below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale. They are only used to conveniently and clearly assist in illustrating the purposes of the embodiments of the present invention. In addition, the structures shown in the drawings are often part of the actual structure. In particular, different drawings may need to illustrate different focuses and sometimes use different scales.

[0030] As used in the present invention, the singular forms "a", "an" and "the" include plural objects, the term "or" is generally used in a sense including "and / or", the term "several" is generally used in a sense including "at least one", and the term "at least two" is generally used in a sense including "two or more". In addition, the terms "first", "second" and "third" are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicating the number of the indicated technical features. Therefore, features defined as "first", "second", and "third" may explicitly or implicitly include one or at least two of such features. The term "proximal end" generally refers to the end closest to the operator, and the term "distal end" generally refers to the end closest to the patient. "One end" and "the other end" as well as "proximal end" and "distal end" generally refer to two corresponding parts, which include not only endpoints. The terms "mounted", "connected", and "connected" should be understood in a broad sense. For example, they can be fixedly connected, detachably connected, or integrated; they can be mechanically connected or electrically connected; they can be directly connected or indirectly connected through an intermediate medium; they can be internal communication between two elements or an interactive relationship between two elements. In addition, as used in the present invention, "one element is arranged on another element" generally only means that there is a connection, coupling, cooperation, or transmission relationship between the two elements, and the connection, coupling, cooperation, or transmission between the two elements can be direct or indirect through an intermediate element, and it should not be understood to indicate or imply a spatial positional relationship between the two elements, that is, one element can be in any position such as inside, outside, above, below, or to the side of another element, unless the content clearly indicates otherwise. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0031] The inventors have found that Figure 1 In the layout area shown in FIG, the position where the two-dimensional CD of the layout ion implantation area 200 is smaller, when the target ion implantation area 300 is corrected and arranged, as shown in FIG. Figure 2 As shown, a rectangular correction pattern is arranged at the location with smaller two-dimensional CD for expansion. By expanding along the diagonal direction of the rectangular correction pattern, the problem of smaller two-dimensional CD in the local area of ​​the layout ion implantation area 200 is solved. However, there is a problem that one side is closer to the active area 100 and needs to be corrected separately.

[0032] Based on this, the core idea of ​​the present invention is to ensure the size safety of the two-dimensional CD of the ion implantation area of ​​the layout by expanding each corrected graphic step by step during OPC correction, while maintaining a safe distance from the active area, reducing the amount of calculation and improving publishing efficiency.

[0033] For details, please refer to Figures 3-4 , which is a schematic diagram of an embodiment of the present invention.Figure 4 As shown, a method for correcting the optical proximity effect of an ion implantation layer layout is provided, wherein an ion implantation region 200 of the layout to be corrected is provided, and correction is performed on a local position of the ion implantation region 200 where the critical dimension is smaller than the required dimension:

[0034] S1, growing correction patterns at both side boundaries of the local position to increase the width of the local position;

[0035] S2, each of the correction patterns is expanded outward in steps: the correction pattern is gradually expanded outward along a predetermined direction by a preset distance, and the distance between the correction pattern and the active area 100 is detected after each step of expansion. If the distance between the correction pattern and the active area 100 is greater than the safety distance, the correction pattern is continued to expand.

[0036] like Figure 3 As described, when the OPC correction is performed on the original layout ion implantation area 200 to form the required target ion implantation area 300, at a local position of the layout ion implantation area 200 with a smaller critical dimension, a correction pattern is grown on both sides of the local position to form the required target ion implantation area 300. The correction patterns on both sides of the local position grow in opposite directions to increase the width of the position. The boundary of each correction pattern grows, and the expansion continues when the distance between the correction pattern and the active area 100 is greater than the safety distance. In this way, the area of ​​the expanded correction pattern can expand the size of the target ion implantation area to the required safety size in one step, while maintaining a certain distance from the active area 100, thereby reducing the program budget and improving publishing efficiency.

[0037] It is understood that if the distance between the modified pattern and the active area 100 is less than the safe distance, the expansion of the modified pattern is stopped and the expansion result of the modified pattern in the previous step is retained. When the critical dimension of the local position is greater than or equal to the required dimension, the expansion of the modified pattern is stopped.

[0038] like Figure 3 As shown, the correction pattern gradually expands outward by a predetermined distance, controlling the parallelism of any side of the correction pattern before and after expansion, thereby effectively controlling the expansion range of the correction pattern. The number of times each correction pattern is gradually expanded and the size of each expansion step are determined by the dimensional rules of the layer itself and its relationship to the active area 100.

[0039] In one embodiment, the correction pattern has at least two outer edges on a side away from the local position, and the correction pattern has a first outer edge and a second outer edge perpendicular to each other on a side away from the local position. In one embodiment, the correction pattern is a polygon.

[0040] More preferably, the correction pattern is a rectangle. In the illustrated area, the rectangle correction pattern is grown in two diagonal directions, as shown in Figure 3 When the diagonal direction meets the active area 100, the growth of the edge in the diagonal direction is stopped, and the edge in the opposite direction continues to grow without restriction. In this way, the size of the ion implantation layer can be expanded to a safe size in one step, while maintaining a safe distance from the active area 100. This method can reduce the amount of program computation and improve the efficiency of publishing.

[0041] Based on the same technical concept, the present disclosure also provides an optical proximity correction system for an ion implantation layer layout, comprising:

[0042] A detection module is configured to obtain a local position of the layout ion implantation area to be corrected, wherein the critical dimension of the local position is smaller than the required size;

[0043] A pattern module is configured to grow a correction pattern at the boundary of the two sides of the local position, respectively, to increase the width of the local position;

[0044] An expansion module is configured to stepwise expand each correction pattern outwardly: the correction pattern is gradually expanded outwardly by a predetermined distance along a predetermined direction, and after each step of expansion, the distance between the correction pattern and the active area is detected. If the distance between the correction pattern and the active area is greater than a safe distance, the correction pattern continues to expand. If the distance between the correction pattern and the active area is less than a safe distance, the expansion of the correction pattern is stopped, and the expansion result of the correction pattern of the previous step is retained.

[0045] As Figure 3 When the original layout ion implantation area 200 is subjected to OPC correction, the target ion implantation area 300 is formed, and at the local position of the layout ion implantation area 200 with a smaller critical dimension, a correction pattern is grown at the two sides of the local position to form the target ion implantation area 300. The correction patterns at the two sides of the local position grow in opposite directions to increase the width at the position. The boundary of each correction pattern grows, and the distance between the correction pattern and the active area 100 is greater than a safe distance. In this way, the expansion of the correction pattern can expand the size of the target ion implantation area to the required safe size in one step, while maintaining a certain distance from the active area 100, reducing the program budget, and improving the efficiency of publishing.

[0046] It can be understood that if the distance between the correction pattern and the active area 100 is less than a safe distance, the expansion of the correction pattern is stopped, and the expansion result of the correction pattern of the previous step is retained. When the critical dimension of the local position is greater than or equal to the required size, the expansion of the correction pattern is stopped.

[0047] like Figure 3 As shown, the correction pattern gradually expands outward by a predetermined distance, controlling the parallelism of any side of the correction pattern before and after expansion, thereby effectively controlling the expansion range of the correction pattern. The number of times each correction pattern is gradually expanded and the size of each expansion step are determined by the dimensional rules of the layer itself and its relationship to the active area 100.

[0048] In one embodiment, the correction pattern has at least two outer edges on a side away from the local position, and the correction pattern has a first outer edge and a second outer edge perpendicular to each other on a side away from the local position. In one embodiment, the correction pattern is a polygon.

[0049] More preferably, the correction pattern is a rectangle. A rectangular correction pattern is formed in the illustrated area, and the correction pattern grows outward in two diagonal directions, such as Figure 3 In the diagonal direction, which forms a 45-degree angle with both the X-axis and the Y-axis, if the outward-extending edge of the diagonal direction comes too close to the active area 100, the edge will stop expanding, while the other edge in the opposite direction will continue to expand without restriction. This allows the required ion implantation layer to be expanded to a safe size in one step while maintaining a safe distance from the active area 100. This method can reduce program computation and improve publishing efficiency.

[0050] The above description is only a description of the preferred embodiment of the present invention and does not limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure are within the scope of protection of the technical solution of the present invention.

Claims

1. A method for correcting the optical proximity effect of an ion implantation layer pattern, characterized in that: Provide a layout ion implantation area to be corrected, and correct a local position of the layout ion implantation area where the critical dimension is smaller than the required dimension: Growing correction patterns at both side boundaries of the local position to increase the width of the local position; Each of the correction patterns is expanded outward in steps: the correction pattern is gradually expanded outward by a preset distance along a predetermined direction, and the distance between the correction pattern and the active area is detected after each step of expansion. If the distance between the correction pattern and the active area is greater than the safety distance, the correction pattern is continued to be expanded.

2. The method for correcting the optical proximity effect of the ion implantation layer pattern according to claim 1, wherein: If the distance between the modified pattern and the active area is less than the safety distance, the expansion of the modified pattern is stopped, and the expansion result of the modified pattern in the previous step is retained.

3. The method for correcting the optical proximity effect of the ion implantation layer pattern according to claim 1, wherein: When the critical size of the local position is greater than or equal to the required size, the expansion of the correction pattern is stopped.

4. The method for correcting the optical proximity effect of the ion implantation layer pattern according to claim 1, wherein: The correction pattern has a first outer side and a second outer side perpendicular to each other on a side away from the local position.

5. The method for correcting the optical proximity effect of the ion implantation layer pattern according to claim 1, wherein: The correction figure is a polygon.

6. The method for correcting the optical proximity effect of the ion implantation layer pattern according to claim 1, wherein: The correction figure is a rectangle.

7. An optical proximity effect correction system for an ion implantation layer pattern, characterized in that: include: A detection module is used to obtain a local position where a critical dimension of an ion implantation region of a layout to be corrected is smaller than a required dimension; A graphics module, configured to grow correction graphics at both side boundaries of the local position to increase the width of the local position; an expansion module, configured to expand each of the correction patterns outward in steps: the correction pattern is gradually expanded outward by a preset distance along a predetermined direction, and the distance between the correction pattern and the active area is detected after each step of expansion. If the distance between the correction pattern and the active area is greater than a safe distance, the correction pattern is continued to be expanded; if the distance between the correction pattern and the active area is less than the safe distance, the correction pattern is stopped from being expanded, and the expansion result of the correction pattern in the previous step is retained.

8. The optical proximity effect correction system for ion implantation layer pattern according to claim 7, characterized in that: When the critical dimension of the local position is greater than or equal to the required dimension, the growth of the correction pattern is stopped.

9. The optical proximity effect correction system for ion implantation layer pattern according to claim 7, characterized in that: The correction pattern has a first outer side and a second outer side perpendicular to each other on a side away from the local position.

10. The optical proximity effect correction system for ion implantation layer pattern according to claim 7, characterized in that: The correction figure is a polygon.

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