Light emitting device, display device, wearable device, and method for manufacturing light emitting device

Abstract

A light-emitting device (10) includes a first semiconductor layer (11) including a first light-emitting layer and a second semiconductor layer (12) including a second light-emitting layer, a first side wall (W1) of the first semiconductor layer (11) and a second side wall (W2) of the second semiconductor layer (12) are adjacent to each other with a gap therebetween, and a normal line of the first side wall (W1) and a normal line of the second side wall (W2) are not parallel (alpha is not equal to 0 degree).

Description

Technical Field

[0001] The present disclosure relates to a light-emitting device, a display device, a wearable device, and a method for manufacturing the light-emitting device. Background Art

[0002] Patent Document 1 discloses a rectangular micro LED panel in which a plurality of micro LEDs are arranged in rows and columns in a plan view. Prior art literature Patent Literature

[0003] Patent Document 1: Japanese Patent Publication No. 2018-185515 Patent Document 2: Japanese Patent Publication No. 2023-001062 Patent Document 3: Japanese Patent Publication No. 2010-96882 Summary of the invention Technical Problems to be Solved by the Invention

[0004] However, in the above-described conventional technology, there is a problem in that stray light is generated to a degree that can be visually recognized. Solutions for solving problems

[0005] In order to solve the above-mentioned problem, a light-emitting device involved in one embodiment of the present invention has the following structure: it includes a first semiconductor layer including a first light-emitting layer and a second semiconductor layer including a second light-emitting layer, a first side wall of the first semiconductor layer and a second side wall of the second semiconductor layer are adjacent to each other with a gap therebetween, and a normal line of the first side wall is not parallel to a normal line of the second side wall.

[0006] In order to solve the above-mentioned problems, a display device according to one embodiment of the present disclosure includes a light-emitting device designed according to the present disclosure.

[0007] In order to solve the above-mentioned problem, a wearable device involved in one embodiment of the present invention is a structure including the light-emitting device of the present invention.

[0008] In order to solve the above problems, a method for manufacturing a light-emitting device according to one embodiment of the present invention is as follows: The invention comprises the steps of growing a semiconductor crystal on a growth substrate; and forming a first semiconductor layer and a second semiconductor layer by patterning the semiconductor crystal, wherein the first semiconductor layer comprises a first light-emitting layer and has a first side wall, the second semiconductor layer comprises a second light-emitting layer and has a second side wall, the first side wall and the second side wall are adjacent to each other with a gap therebetween, and the normal line of the first side wall and the normal line of the second side wall are not parallel. Effects of the Invention

[0009] According to one aspect of the present invention, stray light can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a plan view showing an example of the structure of a light emitting device according to one embodiment of the present disclosure. Figure 2 is through Figure 1 X-direction cross-sectional view of the anode. Figure 3 is through Figure 1 X-direction cross-sectional view of the cathode. Figure 4 Through Figure 1 A cross-sectional view of the first to third light-emitting elements taken along the Y direction. Figure 5 These are two views showing the structure of the light emitting device according to Comparative Example 1, including a plan view and an X-direction cross-sectional view. Figure 6 It is a plan view showing several other examples of the structure of the light emitting device according to one embodiment of the present disclosure. Figure 7 It is a plan view showing several other examples of the structure of the light emitting device according to one embodiment of the present disclosure. Figure 8 It is a plan view showing several other examples of the structure of the light emitting device according to one embodiment of the present disclosure. Fig. 9 It is a plan view showing another example of the configuration of the display device according to one embodiment of the present disclosure. Fig.10 It is a plan view showing another example of the configuration of the display device according to one embodiment of the present disclosure. Fig.11 It is a plan view showing various shape examples of the semiconductor layer according to one embodiment of the present disclosure. Fig.12 This is a plan view showing an example of the positional relationship of semiconductor layers according to one embodiment of the present disclosure. Fig.13 This is a plan view showing an example of the positional relationship of semiconductor layers according to one embodiment of the present disclosure. Fig.14 This is a plan view showing an example of the positional relationship of semiconductor layers according to one embodiment of the present disclosure. Fig.15 It is a cross-sectional view taken along the X direction showing the light distribution of light emitted from the light emitting layer. Fig.16 It is shown Figure 5 FIG. 1 is a graph showing the intensity distribution of light extracted when the light-emitting layer of Comparative Example 1 emits light. Fig.17It is shown Figure 5 The X-direction cross-sectional view of the main light emission and periodic stray light of Comparative Example 1 is shown. Fig.18 It is shown Figure 5 The X-direction cross-sectional view of the broad stray light and the periodic stray light of Comparative Example 1 is shown. Fig.19 1 is a flowchart showing a method for manufacturing a light emitting device according to Example 1 of one embodiment of the present disclosure. Fig. 20 This is a cross-sectional view showing a method for manufacturing the light emitting device according to Example 1. Fig.21 This is a cross-sectional view showing a method for manufacturing the light emitting device according to Example 1. Fig. 22 This is a cross-sectional view showing a method for manufacturing the light emitting device according to Example 1. Fig.23 This is a cross-sectional view showing a method for manufacturing the light emitting device according to Example 1. Fig.24 It is a cross-sectional view showing the structure of a light emitting device according to Example 2 of the present embodiment. Fig.25 This is a diagram showing a photograph taken when one light-emitting element of the light-emitting device according to Comparative Example 2 was made to emit light. Fig.26 This is a diagram showing a photograph taken when one light-emitting element of the light-emitting device according to Example 2 is made to emit light. Fig. 27 1 is a plan view showing a light emitting device according to an embodiment of the present disclosure. Fig.28 FIG. 1 is a cross-sectional view taken along the X direction passing through an anode of a light emitting device according to an embodiment of the present disclosure. Fig.29 This is a cross-sectional view showing an example of the configuration of a display device according to one embodiment of the present disclosure. Fig.30 This is a cross-sectional view showing an example of the configuration of a display device according to one embodiment of the present disclosure. Fig.31 This is a cross-sectional view schematically showing the structure of a display panel according to a fourth embodiment. Fig.32 yes Fig.31 A top view of the display surface of the display panel is shown. Fig.33 It is used to illustrate Fig.31 FIG. 1 is a diagram showing a method for manufacturing a display panel. Fig.34 It is used to illustrate Fig.33 The diagrams of the S20 step, the S22 step and the S24 step are shown. Fig.35 It is used to illustrate Fig.33 The diagram of the S26 step is shown. Fig.36 It is used to illustrate Fig.33 The diagram of the S28 step is shown. Fig.37 It is used to illustrate Fig.33 The diagram of the S30 step is shown. Fig.38 It is viewed from the side where the anode and cathode are formed. Fig.33 After the S30 process shown, Fig.33 The top view is a view of the wafer in a state before the S32 step. Fig.39 This is a cross-sectional view showing a schematic structure of a display panel of Comparative Example 4. Fig.40 This is a diagram for explaining one of the main causes of stray light generated in the display panel of Embodiment 4 and the display panel of Comparative Example 4. Fig.41 The display panel of Comparative Example 4 is shown in FIG. Fig.40 The diagram shows a situation where the stray light generated mainly due to the stray light is visually recognized as virtual light emission in the adjacent sub-pixels including the extinguished light-emitting element. Fig.42 This is a diagram for explaining another main cause of stray light generated in the display panel of Embodiment 4 and the display panel of Comparative Example 4. Fig.43 The display panel of Comparative Example 4 is shown in FIG. Fig.42 The diagram shows a situation where the stray light generated mainly due to the stray light is visually recognized as virtual light emission in the adjacent sub-pixels including the extinguished light-emitting element. Fig.44 3 is a diagram showing the distribution of stray light in the display panel of Comparative Example 4. Fig.45 This is a diagram for explaining the distribution of stray light in the display panel of Embodiment 4 and the reason why, in the display panel of Embodiment 4, light emitted from a light-emitting element that is turned on can be suppressed from becoming stray light. Fig.46 It shows that Fig.57 The diagram shows the distribution of stray light obtained by optical calculation using the display panel of Comparative Example 5 as a model. Fig.47 This means that the light absorber including the refractive index of 2.47 and the transmittance of 0.9 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel of Embodiment 5 as a model. Fig.48This means that the light absorber including the refractive index of 2.47 and the transmittance of 0.7 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel of Embodiment 5 as a model. Fig.49 This means that the light absorber including the refractive index of 2.47 and the transmittance of 0.3 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel of Embodiment 5 as a model. Fig.50 This means that the light absorber including the refractive index of 2.47 and the transmittance of 0.1 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel of Embodiment 5 as a model. Fig.51 This means that the light absorber including the refractive index of 1.5 and the transmittance of 1 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel of Embodiment 5 as a model. Fig.52 This means that the light absorber having a refractive index of 3.47 and a transmittance of 1 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel of Embodiment 5 as a model. Fig.53 This means that the light absorber including the refractive index of 3.47 and the transmittance of 0.3 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel of Embodiment 5 as a model. Fig.54 This is a cross-sectional view schematically showing the structure of another display panel according to the fourth embodiment. Fig.55 This is a cross-sectional view schematically showing the structure of yet another display panel according to the fourth embodiment. Fig.56 This is a cross-sectional view showing a schematic structure of a display panel according to Embodiment 5. Fig.57 This is a cross-sectional view showing a schematic structure of a display panel of Comparative Example 5. Fig.58 It is shown in Fig.56 The display panel of Embodiment 5 shown in FIG. Fig.57 In each of the display panels of Comparative Example 5 shown, Fig.32 A diagram showing the distribution of stray light in the H1 direction. Fig.59 It is shown in Fig.56 The display panel of Embodiment 5 shown in FIG. Fig.57 In each of the display panels of Comparative Example 5 shown, Fig.32 A diagram showing the distribution of stray light in the H2 direction. Fig.60 This is a cross-sectional view showing a schematic structure of a display panel according to Embodiment 6. Fig.61 This is a cross-sectional view showing a schematic structure of a display panel of Comparative Example 6. Fig.62 This is a cross-sectional view showing a schematic structure of a display panel according to Embodiment 7. Fig.63 yes Fig.62 A top view of the display surface of the display panel is shown. Fig.64 It is used to illustrate Fig.62 FIG. 1 is a diagram showing a method for manufacturing a display panel. Fig.65 It is used to illustrate Fig.64 The diagrams of the S20 step, the S22 step, and the S24 step are shown. Fig.66 It is used to illustrate Fig.64 The diagram of the S26 step is shown. Fig.67 It is used to illustrate Fig.64 The diagram of the S28 step is shown. Fig.68 It is used to illustrate Fig.64 The diagram of the S30 step is shown. Fig.69 It is viewed from the side where the anode and cathode are formed. Fig.64 After the S30 process shown, Fig.64 The top view shows the state of the display panel before the S32 step. Fig.70 This is a cross-sectional view showing a schematic structure of a display panel of Comparative Example 4. Fig.71 This is a diagram for explaining one of the main causes of stray light generated in the display panel of Embodiment 7 and the display panel of Comparative Example 4. Fig.72 The display panel of Comparative Example 4 is shown in FIG. Fig.71 The diagram shows a situation where the stray light generated by the main cause causes the adjacent sub-pixels including the extinguished light-emitting elements to be visually recognized as suspected of being illuminated. Fig.73 This is a diagram for explaining another main cause of stray light generated in the display panel of Embodiment 7 and the display panel of Comparative Example 4. Fig.74 It is shown that in the display panel of Comparative Example 4, by Fig.73The diagram shows a situation where the stray light generated by the main cause causes the adjacent sub-pixels including the extinguished light-emitting elements to be visually recognized as pseudo-light-emitting. Fig.75 3 is a diagram showing the distribution of stray light in the display panel of Comparative Example 4. Fig.76 This is a diagram for explaining the distribution of stray light in the display panel of Embodiment 7 and the reason why, in the display panel of Embodiment 7, light emitted from a lighted light-emitting element can be suppressed from becoming stray light. Fig.77 This is a cross-sectional view schematically showing the structure of another display panel according to Embodiment 7. Fig.78 This is a cross-sectional view schematically showing the structure of yet another display panel according to the seventh embodiment. Fig.79 This is a diagram for explaining Rayleigh scattering by a scatterer. Fig.80 This is a diagram for explaining Mie scattering by a scatterer. Fig.81 is shown in addition to using Fig.62 In addition to the fact that the scatterer of the display panel shown in the figure is large in size, by Fig.62 The display panel shown is the same as the display panel of Embodiment 8 and is a diagram showing the distribution of stray light obtained by optical calculation as a model. Fig.82 This is a cross-sectional view showing a schematic structure of a display panel according to Embodiment 9. Fig.83 This is a diagram showing the distribution of stray light in the display panel of Embodiment 9. Fig.84 This is a cross-sectional view schematically showing the structure of a display panel according to Embodiment 10. Fig.85 This is a cross-sectional view schematically showing the structure of a display panel of Comparative Example 5. Fig.86 It means that through Fig.85 The diagram shows the distribution of stray light obtained by optical calculation using the display panel of Comparative Example 5 as a model. Fig.87 It means that by Fig.84 The diagram shows the distribution of stray light obtained by optical calculation using the display panel of Embodiment 10 as a model. Fig.88 This is a cross-sectional view showing a schematic structure of a display panel according to embodiment 11. Fig.89 This is a cross-sectional view schematically showing the structure of a display panel of Comparative Example 6. Fig.90This is a flowchart showing an example of a method for manufacturing a light-emitting device according to Embodiment 12. Fig.91 This is a cross-sectional view showing an example of a manufacturing method according to embodiment 12. Fig.92 This is a cross-sectional view showing an example of a manufacturing method according to embodiment 12. Fig.93 This is a cross-sectional view showing an example of a manufacturing method according to embodiment 12. Fig.94 This is a cross-sectional view showing an example of a manufacturing method according to embodiment 12. Fig.95 This is a cross-sectional view showing a structural example of a display device involved in embodiment 12. Fig.96 The structure of the light-emitting device involved in Embodiment 13 is schematically shown. Fig.97 A schematic cross-sectional view of a light-emitting device according to Embodiment 13 is shown. Fig.98 An example of an image showing a plurality of light-emitting elements actually manufactured by the inventors is shown. Fig.99 This is a diagram for explaining the cause of generation of stray light in a light emitting device according to one embodiment of the present disclosure. Fig.100 Indicates the direction in which the light intensity is measured in the simulation. Fig.101 An example of the distribution of light intensities of each of the first model and the second model derived by simulation is shown. Fig.102 The stray light generated in the first model is schematically shown. Fig.103 Schematic representation of stray light generated in the second model. Fig.104 Another structural example of the light-emitting device involved in Embodiment 13 is shown. DETAILED DESCRIPTION

[0011] [Implementation method 1] (constitute) Figure 1 It is a plan view showing an example of the structure of the light emitting device 2 according to one embodiment of the present disclosure. Figure 2 is through Figure 1 X-direction cross-sectional view of the anode. Figure 3 is through Figure 1 X-direction cross-sectional view of the cathode. Figure 4 Through Figure 1In one embodiment of the present disclosure, the light extraction direction of the light emitting device 10 is set to the z direction, the direction in which the first light emitting element D1 and the second light emitting element D2 are arranged is set to the x direction, and the direction orthogonal to the x direction and the z direction is set to the y direction. In addition, the light extraction direction (z direction) is set to the up-down direction, and the side where the light extraction surface TS of the light emitting device 10 is located is set to the upper side.

[0012] like Figure 1 to Figure 4 As shown, a light-emitting device 10 according to an embodiment of the present disclosure includes a first semiconductor layer 11 including a first light-emitting layer E1 and a second semiconductor layer 12 including a second light-emitting layer E2. A first side wall W1 of the first semiconductor layer 11 and a second side wall W2 of the second semiconductor layer 12 are adjacent to each other with a gap S1 therebetween, and a normal line of the first side wall W1 and a normal line of the second side wall W2 are not parallel when viewed from above. A normal line of a plane is parallel to the intersection line of two planes orthogonal to the plane and passes through the plane. A normal line of a curved surface is a normal line of a contact plane connected to the curved surface, and the contact plane passes through a contact point with the curved surface.

[0013] According to the above configuration, light emitted vertically from the first side wall W1 passes through the gap S1 and is obliquely incident on the second side wall W2. Then, part of the light is reflected by the second side wall W2 and returns to the gap S1, and the other part is refracted by the second side wall W2 and enters the second semiconductor layer 12. In this way, the light emitted vertically from the first side wall W1 is easily reflected and refracted by the second side wall W2, so it is difficult to propagate and is easily attenuated inside the light emitting device 10.

[0014] Figure 5 2 are two views showing a top view and an X-direction cross-sectional view of the structure of the light emitting device involved in Comparative Example 1. Figure 5 As shown, Comparative Example 1 includes a semiconductor layer 1002 including a light-emitting layer 1001 and a semiconductor layer 1003 adjacent to the semiconductor layer 1002 with a gap therebetween, and the normal line of the side wall 1004 of the semiconductor layer 1002 is parallel to the normal line of the side wall 1005 of the semiconductor layer 1003. Light emitted vertically from the side wall 1004 is vertically incident on the side wall 1005. Vertically incident light is less reflected than obliquely incident light and is not refracted. Therefore, light emitted vertically from the side wall 1004 is easily propagated and is easily emitted as stray light to the outside of the light-emitting device at a position far from the light-emitting layer 1001.

[0015] Therefore, one embodiment of the present disclosure relates to a structure and Figure 4 Compared with the configuration of Comparative Example 1 shown, stray light of the light emitting device 10 can be reduced.

[0016] Reference Figure 1 The second side wall W2 is determined in such a way that the normal line of the first side wall W1 intersects with the second side wall W2. The normal line of the first side wall W1 may intersect with the second side wall W2, and the normal line of the second side wall W2 may intersect with the first side wall W1. Since the first side wall W1 and the second side wall W2 are not parallel to each other, the distance across the gap S1 therebetween is not constant. The minimum distance between the first side wall W1 and the second side wall W2 is 30 [nm] to 2.0 [μm]. The distance between the first side wall W1 and the second side wall W2 when the first semiconductor layer 11 and the second semiconductor layer 12 are viewed from above is not constant. The acute angle α formed by the normal line of the first side wall W1 and the normal line of the second side wall W2 may be less than 10° (≦10°).

[0017] In the present disclosure, when the side wall of a certain semiconductor layer X is adjacent to the side wall of another semiconductor layer Y with a gap therebetween, and the normal line of the side wall of the certain semiconductor layer X intersects with the side wall of the other semiconductor layer Y, it is shown that the side wall of the other semiconductor layer Y is opposite to the side wall of the certain semiconductor layer X. When the normal line of one side wall of the semiconductor layer X intersects with the other side wall of the semiconductor layer X, it is shown that the semiconductor layer X has the other side wall on the opposite side of the one side wall. When the normal lines of two side walls are parallel, it is shown that the two side walls are parallel.

[0018] The refractive index of the gap S1 between the first side wall W1 and the second side wall W2 may be smaller than the refractive index of the first semiconductor layer 11 and the second semiconductor layer 12. According to the refractive index difference, the light incident on the second side wall W2 is easily reflected and refracted. Therefore, stray light can be further reduced. The refractive index of the first semiconductor layer 11 and the second semiconductor layer 12 is preferably more than 2.0 times the refractive index of the gap S1. For example, the first semiconductor layer 11 and the second semiconductor layer 12 are formed of a gallium nitride semiconductor, and the gap S1 is filled with a gas. For light with a wavelength of 450 [nm], the refractive index of the gallium nitride semiconductor is about 2.4, and the refractive index of the gas is about 1.

[0019] Reference Figure 2 to Figure 4 , the first light-emitting layer E1 and the second light-emitting layer E2 have different distances from the light extraction surface TS. The second semiconductor layer 12 has a dummy light-emitting layer N1 formed of the same material as the first light-emitting layer E1, and the distance of the dummy light-emitting layer N1 from the light extraction surface TS is the same as that of the first light-emitting layer E1. The first light-emitting layer E1 emits light in a first color, and the second light-emitting layer E2 emits light in a second color. The first color and the second color are any one of red, green and blue.

[0020] The first semiconductor layer 11 also emits light from the sidewall including the first sidewall W1. The second semiconductor layer 12 also emits light from the sidewall including the second sidewall W2 and a fourth sidewall W4 described later. Light also emits from the first sidewall W1 and the second sidewall W2.

[0021] Figure 6 , Figure 7 and Figure 8 FIG. 2 is a plan view showing several other examples of the configuration of the light emitting device according to one embodiment of the present disclosure. Figure 1 , Figure 6 , Figure 7 and Figure 8 , the first side wall W1 and the second side wall W2 are planar shapes. Figure 1 , Figure 6 , Figure 7 and Figure 8 The first semiconductor layer 11 and the second semiconductor layer 12 are, for example, quadrilaterals in a plan view. The quadrilaterals may be any one of rectangles, trapezoids, and rhombuses.

[0022] Fig. 9 FIG. 1 is a top view showing another example of the structure of a display device according to an embodiment of the present disclosure. Fig. 9 As shown, the first side wall W1 and the second side wall W2 may also be curved. The first semiconductor layer 11 and the second semiconductor layer 12 are, for example, circular or elliptical when viewed from above. The major axis of the ellipse when the first semiconductor layer 11 is viewed from above is not parallel to the major axis of the ellipse when the second semiconductor layer 12 is viewed from above. When the side wall of the first semiconductor layer 11 is curved, the side wall portion of the first semiconductor layer 11, that is, the portion where the normal line intersects with the side wall of the second semiconductor layer, is used as the first side wall W1. When the side wall of the second semiconductor layer 12 is curved, the side wall portion of the second semiconductor layer 12, that is, the portion where the normal line intersects with the first side wall W1, is used as the second side wall W2.

[0023] Fig.10 FIG. 1 is a top view showing another example of the structure of a display device according to an embodiment of the present disclosure. Fig.10 As shown, the first side wall W1 and the second side wall W2 are planar shapes, and the first semiconductor layer 11 and the second semiconductor layer 12 are concave polygons having five or more sides in a plan view.

[0024] Reference Figure 2 and Figure 3 The distance between the first side wall W1 and the second side wall W2 hardly changes with the position in the thickness direction z. The first side wall W1 and the second side wall W2 are substantially perpendicular to the light extraction surface TS.

[0025] Reference Figure 1 to Figure 4The light emitting device 10 further includes a third semiconductor layer 13 including a third light emitting layer E3, a third side wall W3 of the third semiconductor layer 13 and a fourth side wall W4 of the second semiconductor layer 12 on the opposite side of the second side wall W2 are adjacent to each other via a gap S2, and a normal line of the third side wall W3 and a normal line of the fourth side wall W4 are not parallel in a plan view. The fourth side wall W4 is a side wall of the second semiconductor layer 12 that intersects with a normal line of the second side wall W2.

[0026] According to the above configuration, light emitted vertically from the fourth side wall W4 passes through the gap S2 and is obliquely incident on the third side wall W3. Therefore, light emitted vertically from the fourth side wall W4 through the gap S1 and the second semiconductor layer 12 is easily reflected and refracted by the third side wall W3, and is difficult to propagate, and is easily attenuated inside the light emitting device 10. Therefore, stray light can be further reduced.

[0027] The third side wall W3 is determined in such a way that the normal of the fourth side wall W4 intersects with the third side wall W3. The normal of the fourth side wall W4 may intersect with the third side wall W3, and the normal of the third side wall W3 may intersect with the fourth side wall W4. Since the third side wall W3 and the fourth side wall W4 are not parallel to each other, the distance across the gap S2 between them is not constant. The minimum distance between the third side wall W3 and the fourth side wall W4 is 30 [nm] to 2.0 [μm]. The distance between the third side wall W3 and the fourth side wall W4 when the third semiconductor layer 13 and the second semiconductor layer 12 are viewed from above is not constant. The minimum distance between the third side wall W3 and the fourth side wall W4 may be different from the minimum distance between the first side wall W1 and the second side wall W2. The acute angle β formed by the normal of the third side wall W3 and the normal of the fourth side wall W4 may be less than 10°.

[0028] The refractive index of the gap S2 between the third side wall W3 and the fourth side wall W4 can be smaller than the refractive index of the third semiconductor layer 13 and the second semiconductor layer 12. Due to the refractive index difference, the light incident on the third side wall W3 is easily reflected and refracted. Therefore, stray light can be further reduced. The refractive index of the third semiconductor layer 13 and the second semiconductor layer 12 is preferably more than 2.0 times the refractive index of the gap S2. For example, the third semiconductor layer 13 and the second semiconductor layer 12 are formed of a gallium nitride semiconductor, and the gap S2 is filled with a gas.

[0029] The third light-emitting layer E3 has a different distance from the light extraction surface TS from the first light-emitting layer E1 and the second light-emitting layer E2. The third semiconductor layer 13 has a virtual light-emitting layer N1 formed of the same material as the first light-emitting layer E1, and the distance between the virtual light-emitting layer N1 and the light extraction surface TS is the same as that of the first light-emitting layer E1. The third semiconductor layer 13 has a virtual light-emitting layer N2 formed of the same material as the second light-emitting layer E2, and the distance between the virtual light-emitting layer N2 and the light extraction surface TS is the same as that of the second light-emitting layer E2. The third light-emitting layer E3 emits light in a third color. The third color is any one of red, green or blue.

[0030] The third semiconductor layer 13 also emits light from the sidewall including the third sidewall W3. The third sidewall W3 is a planar shape, and the third semiconductor layer 13 is a quadrilateral in a plan view. Figure 1 , Figure 6 , Figure 7 and Figure 8 , the quadrilateral may be any one of a rectangle, a trapezoid and a rhombus. Fig. 9 The third side wall W3 and the fourth side wall W4 may also be curved. The third semiconductor layer 13 is, for example, a circle, an ellipse, or an oblong when viewed from above, and the major axis of the ellipse when the third semiconductor layer 13 is viewed from above is not parallel to the major axis of the ellipse when the second semiconductor layer 12 is viewed from above. Fig.10 The third side wall W3 is in a planar shape, and the third semiconductor layer 13 may be a concave polygon with more than five sides when viewed from above.

[0031] On this basis, preferably there is no parallel sidewall opposite to the first sidewall W1, and more preferably no parallel sidewall opposite to any sidewall of the first semiconductor layer 11. The same is true for the sidewalls of the second semiconductor layer 12 and the third semiconductor layer 13, and preferably no parallel sidewall opposite to each other exists.

[0032] Fig.11 FIG. 1 is a top view showing various shape examples of a semiconductor layer according to an embodiment of the present disclosure. Fig.11 As shown, the first semiconductor layer 11, the second semiconductor layer 12 and the third semiconductor layer 13 may have a triangle, a non-isosceles trapezoid, a heptagon and other shapes. In the case of a polygon, it is preferred that at least one side does not have an opposite side parallel to itself.

[0033] Fig.12 FIG. 1 is a top view showing an example of the positional relationship of semiconductor layers according to an embodiment of the present disclosure. Fig.12As shown, when the first semiconductor layer 11, the second semiconductor layer 12 and the third semiconductor layer 13 are roughly rectangular with a width t and a height h when viewed from above, when the average spacing between the side walls is s, the following conditional formula (1) is satisfied, so that the first side wall W1 and the second side wall W2 are separated from each other. In addition, the following conditional formulas (2) and (3) are satisfied, so that the third side wall W3 and the fourth side wall W4 are not parallel to each other and are separated. The acute angles α and β are respectively acute angles, and therefore are greater than 0° and less than 90°.

[0034] [Mathematical formula 1] hxcos (I) α≠β (2) The following conditional expressions (1') and (3') are derived from conditional expressions (1) and (3), respectively.

[0035] [Mathematical formula 2] Fig.13 and Fig.14 This is a plan view showing an example of the positional relationship of semiconductor layers according to one embodiment of the present disclosure. Fig.13 and Fig.14 The first semiconductor layer 11 and the second semiconductor layer 12 are respectively shown as isosceles trapezoids with a length t and a height h of the upper base when viewed from above, the upper bases are arranged on a straight line with an interval s, and the first to fourth side walls W1 to W4 are the hypotenuses of the isosceles trapezoids. Fig.13 As shown, when the upper base is smaller than the lower base, the following conditional formula (4) is satisfied, so that the first side wall W1 and the second side wall W2 are separated from each other. Fig.14 As shown, when the upper base is larger than the lower base, the following conditional formula (5) is satisfied, so that the length of the lower base is greater than 0.

[0036] [Mathematical formula 3] The following conditional expressions (4') and (5') are derived from conditional expressions (4) and (5), respectively.

[0037] [Formula 4] Reference Figure 1 to Figure 4The light emitting device 10 includes: a first light emitting element D1 including a first light emitting layer E1, a second light emitting element D2 including a second light emitting layer E2, and a third light emitting element D3 including a third light emitting layer E3. The light emitting device 10 includes: a growth substrate SK combined with the first semiconductor layer 11, the second semiconductor layer 12, and the third semiconductor layer 13; and a driving substrate DK on which the first light emitting element D1, the second light emitting element D2, and the third light emitting element D3 are mounted.

[0038] The first light emitting element D1 includes a first semiconductor layer 11, and includes an anode A1 and a cathode K1 located between the first semiconductor layer 11 and the driving substrate DK. The second light emitting element D2 includes a second semiconductor layer 12, and includes an anode A2 and a cathode K2 located between the second semiconductor layer 12 and the driving substrate DK. The third light emitting element D3 includes a third semiconductor layer 13, and includes an anode A3 and a cathode K3 located between the third semiconductor layer 13 and the driving substrate DK. The anodes A1, A2, A3 and the cathodes K1, K2, K3 may be made of the same material.

[0039] The light emitting device 10 includes a conductive layer JC that electrically connects the anodes A1, A2, A3 and the cathodes K1, K2, and K3 to the driving substrate DK, respectively. The conductive layer JC may also function as a bonding material that mechanically bonds the first light emitting element D1, the second light emitting element D2, and the third light emitting element D3 to the driving substrate DK.

[0040] The first semiconductor layer 11 includes an anode contact layer F1 connected to the anode A1 and a cathode contact layer C1 connected to the cathode K1, and the anode contact layer F1 and the cathode contact layer C1 are n-type semiconductor layers. The first semiconductor layer 11 also includes a tunnel junction layer T1 located between the first light-emitting layer E1 and the anode contact layer F1, a p-type layer H1 located between the first light-emitting layer E1 and the tunnel junction layer T1, and an intermediate layer G1 located between the first light-emitting layer E1 and the p-type layer H1. The first semiconductor layer 11 also includes a buffer layer BA connected to the growth substrate SK and a base layer U1 located between the buffer layer BA and the cathode contact layer C1.

[0041] The p-type semiconductor material has a Fermi level closer to the valence band than the center of the valence band and the conduction band. The p-type semiconductor is hole-transporting. The n-type semiconductor material has a Fermi level closer to the conduction band than the center of the valence band and the conduction band. The n-type semiconductor is electron-transporting.

[0042] The second semiconductor layer 12 includes an anode contact layer F2 connected to the anode A2 and a cathode contact layer C2 connected to the cathode K2, and the anode contact layer F2 and the cathode contact layer C2 are n-type semiconductor layers. The second semiconductor layer 12 also includes a tunnel junction layer T2 located between the second light-emitting layer E2 and the anode contact layer F2, a p-type layer H2 located between the second light-emitting layer E2 and the tunnel junction layer T2, and an intermediate layer G2 located between the second light-emitting layer E2 and the p-type layer H2. The second semiconductor layer 12 also includes a buffer layer BA connected to the growth substrate SK and a base layer U2 located between the buffer layer BA and the cathode contact layer C2.

[0043] The second semiconductor layer 12 may have dummy layers respectively formed of the same materials as the base layer U1 , the cathode contact layer C1 , the intermediate layer G1 , the p-type layer H1 , the tunnel junction layer T1 , and the anode contact layer F1 .

[0044] The third semiconductor layer 13 includes an anode contact layer F3 connected to the anode A3 and a cathode contact layer C3 connected to the cathode K3, and the anode contact layer F3 and the cathode contact layer C3 are n-type semiconductor layers. The third semiconductor layer 13 also includes a tunnel junction layer T3 between the third light-emitting layer E3 and the anode contact layer F3, a p-type layer H3 between the third light-emitting layer E3 and the tunnel junction layer T3, and an intermediate layer G3 between the third light-emitting layer E3 and the p-type layer H3. The third semiconductor layer 13 also includes a buffer layer BA connected to the growth substrate SK and a base layer U3 between the buffer layer BA and the cathode contact layer C3.

[0045] The third semiconductor layer 13 may have a dummy layer respectively formed of the same materials as the base layer U1, the cathode contact layer C1, the intermediate layer G1, the p-type layer H1, the tunnel junction layer T1, the anode contact layer F1, the base layer U2, the cathode contact layer C2, the intermediate layer G2, the p-type layer H2, the tunnel junction layer T2 and the anode contact layer F2.

[0046] The first semiconductor layer 11, the second semiconductor layer 12, and the third semiconductor layer 13 may be nitride semiconductor crystals containing gallium. The first semiconductor layer 11, the second semiconductor layer 12, and the third semiconductor layer 13 are respectively connected to the growth surface BS ( Figure 2 to Figure 4 The lower surface of the growth substrate SK is bonded to the surface on the opposite side of the growth surface BS ( Figure 2 to Figure 4 The upper surface of the anode 11 is the light extraction surface TS of the light emitting device 10. Preferably, the anodes A1, A2, A3 and the cathodes K1, K2, K3 are light reflective. The light extraction efficiency of the light emitting device 10 can be improved by light reflection.

[0047] (Light distribution and intensity distribution) Fig.152 is a cross-sectional view in the X direction showing the light distribution of light emitted from the light emitting layer. Fig.15 As shown, the light emitted from the first light-emitting layer E1, the second light-emitting layer E2, the third light-emitting layer E3 and the light-emitting layer 1001 of Comparative Example 1 is Lambertian oriented when emitted from any surface. That is, the angle between the normal direction of the emission surface and the emission direction is set as the emission angle θ, and the emission light intensity is proportional to cosθ.

[0048] Fig.16 It is shown Figure 5 The intensity distribution of light extracted when the light-emitting layer of Comparative Example 1 is shown in FIG. Fig.16 As shown, when the light emitting layer 1001 of Comparative Example 1 emits light, the intensity distribution 1007 at the light extraction surface 1006 is a sum of a component 1008 based on the main light emission, a component 1009 based on the periodic stray light, and a component 1010 based on the wide stray light.

[0049] Fig.17 It is shown Figure 5 The X-direction cross-sectional view of the main light and periodic stray light of Comparative Example 1 shown in FIG. Fig.17 As shown in FIG. 1 , the light emitted from the light emitting layer 1001 in a direction substantially orthogonal to the light extraction surface is the main light emission. This is because it includes light emitted from the upper and lower surfaces of the light emitting layer 1001 at θ≈0° and light emitted from the sidewalls of the light emitting layer 1001 at θ≈90°. For example, it includes light emitted from the upper and lower surfaces of the light emitting layer 1001 at θ≦5° and light emitted from the sidewalls of the light emitting layer 1001 at 85°≦θ.

[0050] Fig.18 It is shown Figure 5 The X-direction cross-sectional view of the wide stray light and periodic stray light of the comparative example shown in FIG. Fig.18 As shown in FIG. 1 , the light emitted from the light emitting layer 1001 in a direction substantially parallel to the light extraction surface becomes wide stray light. This is because it includes light emitted from the upper and lower surfaces of the light emitting layer 1001 at θ≈90° and light emitted from the sidewalls of the light emitting layer 1001 at θ≈0°. For example, it includes light emitted from the upper and lower surfaces of the light emitting layer 1001 at 85°≦θ and light emitted from the sidewalls of the light emitting layer 1001 at θ≦5°.

[0051] Reference Fig.17 and Fig.18 , the light emitted from the light emitting layer 1001 in an inclined direction toward the light extraction surface becomes periodic stray light. This is because it includes light emitted from the upper surface, lower surface, and side wall of the light emitting layer 1001 at 0°<<θ<<90°. For example, it includes light emitted from the upper surface, lower surface, and side wall of the light emitting layer 1001 at 5°<θ<85°.

[0052] As in Comparative Example 1, when adjacent side walls are parallel to each other, light emitted vertically from the side wall is vertically incident on the other side wall and is hardly reflected. Therefore, light emitted vertically from the side wall propagates to a distant place. On the other hand, according to the configuration involved in one embodiment of the present disclosure, light emitted vertically from the first side wall W1 is non-vertically incident on the second side wall W2. Generally speaking, since the refractive index of the semiconductor material is greater than the refractive index of the atmosphere, the total reflection angle of light incident from the semiconductor material to the atmosphere is wide. Therefore, light non-vertically incident on the second semiconductor layer 12 is reflected in the second semiconductor layer 12 and is difficult to be emitted into the atmosphere. As a result, stray light is reduced.

[0053] (Example 1) Fig.19 1 is a flowchart showing a method for manufacturing a light emitting device according to Example 1 of the present embodiment. Figure 20 to Figure 23 1 is a cross-sectional view showing a method for manufacturing a light emitting device according to Embodiment 1. Figure 20 to Figure 23 As shown, in step S20, a semiconductor crystal SL is epitaxially grown on a growth substrate SK (e.g., a C-plane sapphire substrate) using an MOCVD device or the like. The semiconductor crystal SL may be a nitride semiconductor crystal. As nitride semiconductors, in addition to GaN-based semiconductors, AlN (aluminum nitride) and InN (indium nitride) may also be listed. In the present invention, epitaxial growth is sometimes referred to simply as "growth".

[0054] Step S20 includes: step 20a, sequentially forming a buffer layer BA, a base layer U1, a cathode contact layer C1, a first light-emitting layer E1, an intermediate layer G1, a p-type layer H1, a tunnel junction layer T1, and an anode contact layer F1; step 20b, sequentially forming a base layer U2, a cathode contact layer C2, a second light-emitting layer E2, an intermediate layer G2, a p-type layer H2, a tunnel junction layer T2, and an anode contact layer F2; step 20c, sequentially forming a base layer U3, a cathode contact layer C3, a third light-emitting layer E3, an intermediate layer G3, a p-type layer H3, a tunnel junction layer T3, and an anode contact layer F3. Steps 20a to 20c can be performed sequentially in an MOCVD device, for example.

[0055] The buffer layer BA can be a gallium nitride crystal (e.g., 40 [nm] thick) formed at a low temperature (e.g., below 600°C). The base layers U1, U2, and U3 can be undoped gallium nitride crystals (e.g., 2 [μm] thick). The cathode contact layers C1, C2, and C3 can be n-type gallium nitride crystals (e.g., 2 [μm] thick). The first light-emitting layer E1, the second light-emitting layer E2, and the third light-emitting layer E3 can be active layers of an MQW (multiple quantum well) structure. For example, as the first light-emitting layer E1 that emits blue light with a wavelength of about 450 [nm], indium gallium nitride (a mixed crystal with an atomic ratio of In and Ga of 1:4) with a thickness of 50 [nm] and an In (indium) composition ratio of 20% can be used. For example, as the second light-emitting layer E2 that emits green light with a wavelength of about 550 [nm], indium gallium nitride (mixed crystal) with an In composition ratio of 25% can be used. For example, as the third light-emitting layer E3 emitting red light of about 630 [nm] in wavelength, indium gallium nitride (mixed crystal) with an In composition ratio of 30% can be used. The intermediate layers G1, G2, and G3 can be p-type aluminum gallium nitride crystals (e.g., thickness 20 [nm]). The p-type layers H1, H2, and H3 can be p-type gallium nitride crystals (e.g., thickness 120 [nm]). The tunnel junction layers T1, T2, and T3 can be undoped gallium nitride crystals (e.g., thickness 25 [nm]). The anode contact layers F1, F2, and F3 can be n-type gallium nitride crystals (e.g., thickness 400 [nm]).

[0056] In step S22, the semiconductor crystal SL is patterned by dry etching to expose the cathode contact layers C1, C2, and C3. As an etching mask in step S22, an inorganic film (silicon oxide film, nickel film, etc.) patterned by a resist or a stripping method can be used. In dry etching, a reactive ion etching (RIE) method using halogens such as chlorine or fluorine can be applied. The etching mask is removed by a remover, an acidic solution, etc.

[0057] In step S24, anodes A1, A2, A3 are formed on anode contact layers F1, F2, F3, and cathodes K1, K2, K3 are formed on cathode contact layers C1, C2, C3. Specifically, the electrode material (e.g., a laminated film of aluminum and titanium) deposited using a resist as a mask is patterned by lift-off.

[0058] In step S26, the semiconductor crystal SL is patterned by dry etching to form the first semiconductor layer 11, the second semiconductor layer 12, and the third semiconductor layer 13. Here, the area outside the element separation area is protected by a resist, and the portion between the elements in the semiconductor crystal SL is completely removed by, for example, a halogen-based RIE method, so that the growth substrate SK is exposed between the elements. The growth substrate SK itself can also be etched to form bumps and depressions on the growth substrate SK. For electrical element separation, it is sufficient to stop etching just below the first light-emitting layer E1, the second light-emitting layer E2, and the third light-emitting layer E3, but for optical element separation, etching can also be performed in a manner that exposes the surface of the growth substrate SK.

[0059] In step S28, a protective film PF is formed, which covers the first side wall W1 included in the first semiconductor layer 11, the second side wall W2 and the fourth side wall W4 included in the second semiconductor layer 12, and the third side wall W3 included in the third semiconductor layer 13, and forms the first light-emitting element D1, the second light-emitting element D2 and the third light-emitting element D3. Here, after a mask covering the anodes A1, A2, A3 and the cathodes K1, K2, K3 is formed by photolithography or the like, silicon oxide is formed by electron beam evaporation to cover the first to fourth side walls W1 to W4 as a protective film PF. The protective film PF has the function of preventing short circuits between elements and preventing oxidation.

[0060] In step S30, the first light emitting element D1, the second light emitting element D2, and the third light emitting element D3 are mounted on the driving substrate DK via the conductive layer JC to obtain the light emitting device 10. The conductive layer JC can use solder or an anisotropic conductive adhesive material. After mounting on the driving substrate DK, the growth substrate SK can also be peeled off from the first light emitting element D1, the second light emitting element D2, and the third light emitting element D3 by laser lift-off method or the like.

[0061] Comparative Example 1 includes a cathode contact layer formed of an n-type semiconductor and an anode contact layer formed of a p-type semiconductor. The band gap between the valence band and the conduction band of a gallium nitride semiconductor is large. Therefore, in the structure involved in Comparative Example 1, the work functions of the metals respectively suitable for the cathode and the anode are very different, and heterogeneous metals need to be used. Aluminum and titanium are suitable for the cathode, and nickel and gold are suitable for the anode. The evaporation conditions of each of these metals are different, and they need to be evaporated separately. Therefore, the formation of the cathode and the anode requires multiple insulating layers, and multiple photolithography for the evaporation mask needs to be performed.

[0062] On the other hand, the light emitting device 10 involved in Example 1 is a structure that injects holes from the anodes A1, A2, A3 into the p-type layers H1, H2, H3 through the cathode contact layers C1, C2, C3 as n-type semiconductor layers and the tunnel junction layers T1, T2, T3. As a result, the anodes A1, A2, A3 and the cathodes K1, K2, K3 can be formed simultaneously using the same material, which can simplify the process compared to the general method of forming the anode and cathode using different processes and different materials. In addition, it has the advantage of stabilizing the electrical characteristics of the light emitting element by not exposing the p-type (semiconductor) layer that is prone to high resistance through dry etching and mechanical grinding. Figures 1 to 5 In the embodiment, the first to third light emitting elements D1 to D3 are monolithically formed on the growth substrate SK, but the present invention is not limited thereto. The first to third light emitting elements D1 to D3 formed separately may be mounted on the driving substrate DK.

[0063] (Example 2) Fig.24 2 is a cross-sectional view showing the structure of the light emitting device according to Example 2 of this embodiment. Fig.24 As shown, the first light-emitting layer E1, the second light-emitting layer E2 and the third light-emitting layer E3 involved in Example 2 are formed of the same material and the same layer. The base layers U1, U2, U3, the cathode contact layers C1, C2, C3, the intermediate layers G1, G2, G3, the p-type layers H1, H2, H3, the tunnel junction layers T1, T2, T3 and the anode contact layers F1, F2, F3 are also shared. When viewed from above, Figure 1 As shown, the first semiconductor layer 11, the second semiconductor layer 12 and the third semiconductor layer 13 according to the second embodiment are arranged so that the acute angles α and β formed by the normal lines are 2°.

[0064] The light emitting device 10 according to the second embodiment includes a plurality of other semiconductor layers arranged so that the opposing side walls are not parallel.

[0065] (Comparative Example 2) The light emitting device according to Comparative Example 2 was formed in the same manner as the light emitting device 10 according to Example 2, except that the semiconductor layers were arranged so that the opposing side walls were parallel.

[0066] Fig.25 The diagram shows a photograph obtained by causing one light emitting element of the light emitting device according to Comparative Example 2 to emit light for 30 [ms] and focusing the light for 300 [ms]. Fig.26 1 is a diagram showing a photograph taken by making one light emitting element of the light emitting device according to Example 2 emit light for 30 [ms] and focusing the light for 300 [ms]. Fig.25 and Fig.26As shown, the periodic stray light component is captured in the light emitting device according to Comparative Example 2, but not in the light emitting device 10 according to Example 2. Therefore, it can be confirmed that the configuration according to one embodiment of the present disclosure can reduce the periodic stray light.

[0067] [Implementation method 2] Other embodiments of the present disclosure will be described below. In addition, for the sake of convenience, components having the same functions as those described in the above embodiments are denoted by the same reference numerals, and their description will not be repeated.

[0068] Fig. 27 1 is a plan view showing a light emitting device according to an embodiment of the present disclosure. Fig.28 FIG. 1 is a cross-sectional view of an anode of a light emitting device according to an embodiment of the present disclosure. Figure 27-28 As shown, the normal line of the first side wall W1 and the normal line of the second side wall W2 are not parallel when observed from a cross section. The distance between the first side wall W1 and the second side wall W2 varies depending on the position in the thickness direction z. The first semiconductor layer 11 and the second semiconductor layer 12 are respectively conical in shape, for example, a shape that gradually tapers in the direction away from the light extraction surface TS. In addition, the normal line of the third side wall W3 and the normal line of the fourth side wall W4 may also be non-parallel when observed from a cross section. The distance between the third side wall W3 and the fourth side wall W4 varies depending on the position in the thickness direction z, and the third semiconductor layer 13 is conical in shape, and is a shape that gradually tapers in the direction away from the light extraction surface TS.

[0069] Reference Figure 5 In order to increase the density of components, the gaps between components are usually narrow, and it is beneficial that the sidewalls 1004 and 1005 are approximately parallel when viewed from a cross section. Therefore, the sidewalls 1004 and 1005 are approximately perpendicular to the substrate 1020. On the other hand, the inventors of the present disclosure have found that in order to reduce stray light, it is beneficial that the first sidewall W1 and the second sidewall W2 are not parallel when viewed from a cross section. Therefore, in the configuration involved in this embodiment, the first sidewall W1 and the second sidewall W2 are inclined relative to the growth substrate SK. This configuration can be achieved by determining the material of the etching mask in step S300 so that the etching selectivity is greater than 1. The selectivity R sets the speed of the etching mask to V1 and the speed of etching the semiconductor crystal SL to V2, R: =V1÷V2.

[0070] The acute angles α and β may be less than 10° respectively. The second embodiment can be combined with the first embodiment. For example, the normal line of the first side wall W1 and the normal line of the second side wall W2 may not be parallel in both top view and cross-section view.

[0071] [Implementation method 3] Fig.291 is a cross-sectional view showing an example of the structure of a display device according to an embodiment of the present disclosure. Fig.29 As shown, a display device 50 according to one embodiment of the present disclosure includes a light emitting device 10. The display device 50 has a plurality of pixels PX, and the pixel PX includes, for example, first to third light emitting elements D1 to D3. Light from the pixel PX can be directly incident on a human eye or a sensor, etc., or can be incident via a projector 80. A wearable device 60 including a light emitting device 10 or a display device 50 can be formed, and images of the outside world 90 and the display device 50 can be overlapped.

[0072] Fig.30 1 is a cross-sectional view showing an example of the structure of a display device according to an embodiment of the present disclosure. Fig.30 As shown, a blue display panel including a light-emitting device 10 including first to third light-emitting elements D1 to D3, a green display panel including a light-emitting device 10 including fourth to sixth light-emitting elements D4 to D6, and a red display panel including a light-emitting device 10 including fifth to sixth light-emitting elements D5 to D9 can also be combined and used in a display device. By overlapping monochrome display panels, multi-color display can be performed. Alternatively, the light from the first, fourth and seventh light-emitting elements D1, D4, and D7 can also overlap at the same pixel PX of the projected object 80.

[0073] [Implementation method 4] In recent years, display panels including a plurality of micro LEDs have been used in a wide range of fields, such as AR (Augmented Reality), VR (Virtual Reality), and the field of small to large display devices, and have attracted attention.

[0074] Japanese Patent Gazette No. 2023-001062 discloses an organic EL display device, which includes a structure that absorbs or reflects visible light, the structure comprising: a dome-shaped resin layer that is a portion disposed between adjacent light-emitting elements; and a portion of an organic layer (e.g., an electron injection layer) that is disposed along the shape of the dome-shaped resin layer and is a continuous layer shared by each light-emitting element, and a portion of a common reflective electrode layer.

[0075] However, in the case of the organic EL display device described in Patent Document 1, since a continuous organic layer (e.g., an electron injection layer) is provided that is common to all light-emitting elements, the following problem arises: light emitted from a sub-pixel including a lit light-emitting element propagates in the continuous organic layer (e.g., the electron injection layer) that is common to all light-emitting elements and becomes stray light, causing an adjacent sub-pixel including an extinguished light-emitting element to be visually confirmed to be emitting light in a suspicious manner (suspicious light).

[0076] In the field of display panels including a plurality of micro LEDs, there is a problem that the structure described in Patent Document 1 cannot be formed because a common reflective electrode layer that is a continuous layer common to each light-emitting element is not provided.

[0077] An aspect of the present disclosure provides a display panel capable of reducing the possibility that light emitted from a light-emitting element that is lit becomes stray light.

[0078] Fig.31 is a cross-sectional view showing a schematic structure of a display device 1 according to Embodiment 4. Fig.31 In the figure, the anodes A1 to A3 , the cathodes K1 to K3 , and the insulating film PF are omitted.

[0079] Fig.31 The display panel 1 shown includes: an island-shaped stack 11, which is composed of a plurality of stacked semiconductor layers including a light-emitting layer E1; a light-emitting element D1, which includes an anode A1 and a cathode K1; an island-shaped stack 12, which is composed of a plurality of stacked semiconductor layers including light-emitting layers E1 to E2; a light-emitting element D2, which includes an anode A2 and a cathode K2; an island-shaped stack 13, which is composed of a plurality of stacked semiconductor layers including light-emitting layers E1 to E3; and a light-emitting element D3, which includes an anode A3 and a cathode K3. Between the island-shaped stacks 11 to 13 respectively provided with the plurality of light-emitting elements D1 to D3, a light absorber LA for absorbing light in the visible light region is provided, and the light absorber LA includes a material different from the material constituting the stacks 11 to 13.

[0080] In this embodiment, the example is given of a light-emitting element (first light-emitting element) D1 having an island-shaped stack 11 composed of a plurality of stacked semiconductor layers including a blue light-emitting layer E1, and the light L1 from the light-emitting layer E1 is a blue light-emitting element; the light-emitting element (second light-emitting element) D2 having an island-shaped stack 12 composed of a plurality of stacked semiconductor layers including a green light-emitting layer E2 and a non-luminous light-emitting layer E1, and the light L2 from the light-emitting layer E2 is a green light-emitting element; and the light-emitting element (third light-emitting element) D3 having an island-shaped stack 13 composed of a plurality of stacked semiconductor layers including a red light-emitting layer E3 and non-luminous light-emitting layers E1 and E2, and the light L3 from the light-emitting layer E3 is a red light-emitting element, but the present invention is not limited to this.

[0081] Fig.32 yes Fig.31 1 is a top view of a display surface SM of a display panel 1 .

[0082] In this embodiment, if Fig.32As shown, the example of a pixel PI including a red sub-pixel RSUB, a green sub-pixel GSUB and a blue sub-pixel BSUB is described, the blue sub-pixel BSUB includes a light-emitting element (first light-emitting element) D1 as a blue light-emitting element, the green sub-pixel GSUB includes a light-emitting element (second light-emitting element) D2 as a green light-emitting element, and the red sub-pixel RSUB includes a light-emitting element (third light-emitting element) D3 as a red light-emitting element, but it is not limited to this. For example, a pixel PI may also include sub-pixels of other colors other than the red sub-pixel RSUB, the green sub-pixel GSUB and the blue sub-pixel BSUB.

[0083] Fig.31 The light emitting elements D1 to D3 shown in the figure are separated into components, so that Fig.32The sub-pixel unit shown controls the light emission. In the present embodiment, a display panel 1 is manufactured by manufacturing a plurality of monolithic wafers, arranging the plurality of wafers on a driving substrate DK in wafer units, and bonding the wafers to the driving substrate DK via a conductive adhesive layer JC as an example for explanation, wherein the monolithic wafer is provided with a plurality of light-emitting elements D1 to D3 that emit light in different colors on a growth substrate SK (for example, a C-plane sapphire substrate), but is not limited thereto. For example, as in the display panel 2 of the later-described embodiment 2, a plurality of monolithic wafers in which a plurality of light-emitting elements D1' that emit light in the same color are provided on a growth substrate SK may be manufactured, and the plurality of wafers may be arranged on a driving substrate DK in wafer units, and bonded to the driving substrate DK via a conductive adhesive layer JC. In addition, for example, as in the display panel 3 of Embodiment 3 described later, a plurality of chips including a light-emitting element D1' as a blue light-emitting element, a chip including a light-emitting element D2' as a green light-emitting element, and a chip including a light-emitting element D3' as a red light-emitting element may be manufactured and bonded to the driving substrate DK via a conductive adhesive layer JC so that the chips are neatly arranged on one driving substrate DK. In addition, the display panels 1, 1a, 1b described in this embodiment and the display panel 3 described in Embodiment 3 are display panels having a plurality of light-emitting elements that emit light in different colors, and therefore, by using one display panel, for example, AR (Augmented Reality), VR (Virtual Reality), and color display devices ranging from small to large can be realized. On the other hand, the display panel 2 described in embodiment 2 is a monochrome display panel having a plurality of light-emitting elements that emit light in one color. Therefore, for example, by using three display panels including a red monochrome display panel, a green monochrome display panel, and a blue monochrome display panel, and optical system components such as mirrors, it is possible to realize AR (Augmented Reality), VR (Virtual Reality), and color display devices ranging from small to large.

[0084] The following is based on Figure 33 to Figure 37 , a manufacturing process of the display panel 1 of this embodiment is described.

[0085] Fig.33 It is used to illustrate Fig.31 FIG. 1 is a diagram showing a method for manufacturing a display panel. Fig.34 It is used to illustrate Fig.33 The diagrams of the S20 step, the S22 step and the S24 step are shown. Fig.35 It is used to illustrate Fig.33 The diagram of the S26 step is shown. Fig.36 It is used to illustrate Fig.33The diagram of the S28 step is shown. Fig.37 It is used to illustrate Fig.33 The diagram of the S30 step is shown.

[0086] "Growing a semiconductor crystal on a growth substrate" Fig.33 In the S20 process shown in FIG. Fig.34 As shown, a semiconductor crystal SL is epitaxially grown on a growth substrate SK (e.g., a C-plane sapphire substrate) using an MOCVD device or the like. The semiconductor crystal SL may be, for example, a nitride semiconductor crystal. As nitride semiconductors, in addition to GaN-based semiconductors, AlN (aluminum nitride) and InN (indium nitride) may also be listed.

[0087] like Fig.34 As shown, the S20 process of forming the semiconductor crystal SL includes: a first process of sequentially forming a buffer layer BA, a base layer U1, a cathode contact layer C1, a light-emitting layer E1, an intermediate layer G1, a p-type layer H1, a tunnel junction layer T1, and an anode contact layer F1; a second process of sequentially forming a base layer U2, a cathode contact layer C2, a light-emitting layer E2, an intermediate layer G2, a p-type layer H2, a tunnel junction layer T2, and an anode contact layer F2; and a third process of sequentially forming a base layer U3, a cathode contact layer C3, a light-emitting layer E3, an intermediate layer G3, a p-type layer H3, a tunnel junction layer T3, and an anode contact layer F3. For example, the first process to the third process can be performed in sequence in an MOCVD device.

[0088] The buffer layer BA may also be a gallium nitride crystal (e.g., 40 nm thick) formed at a low temperature (e.g., below 600°C). The base layers U1, U2, and U3 may be undoped gallium nitride crystals (e.g., 2 μm thick). The cathode contact layers C1, C2, and C3 may be n-type gallium nitride crystals (e.g., 2 μm thick). The light-emitting layers E1, E2, and E3 may be active layers of an MQW (multiple quantum well) structure. For example, as a light-emitting layer E1 that emits blue light with a wavelength of about 450 nm, indium gallium nitride with a thickness of 50 nm and an In (indium) composition ratio of 20% (a mixed crystal with an atomic ratio of In to Ga of 1:4) may be used. For example, as a light-emitting layer E2 that emits green light with a wavelength of about 550 nm, indium gallium nitride (mixed crystal) with an In composition ratio of 25% may be used. For example, as a light-emitting layer E3 that emits red light with a wavelength of about 630 nm, indium gallium nitride (mixed crystal) with an In composition ratio of 30% may be used. The intermediate layers G1, G2, and G3 may be p-type aluminum gallium nitride crystals (e.g., 20 nm thick). The p-type layers H1, H2, and H3 may be p-type gallium nitride crystals (e.g., 120 nm thick). The tunnel junction layers T1, T2, and T3 may be undoped gallium nitride crystals (e.g., 25 nm thick). The anode contact layers F1, F2, and F3 may be n-type gallium nitride crystals (e.g., 400 nm thick).

[0089] "Patterning the semiconductor crystal by etching to expose the anode contact layer and the cathode contact layer" Fig.33 In the S22 process shown in FIG. Fig.34 As shown, the semiconductor crystal SL is patterned by dry etching to expose the cathode contact layers C1, C2, C3 and the anode contact layers F1, F2, F3. In this process, an inorganic film (silicon oxide film, nickel film, etc.) patterned by a resist or a stripping method can be used as an etching mask. Reactive ion etching (RIE) using halogens such as chlorine or fluorine can be applied to dry etching. In addition, the etching mask is removed by a release agent, an acidic solution, etc.

[0090] In the process of “forming an anode on the anode contact layer and forming a cathode on the cathode contact layer” Fig.33 In the S24 process shown in FIG. Fig.34 As shown, anodes A1, A2, A3 are formed on anode contact layers F1, F2, F3, respectively, and cathodes K1, K2, K3 are formed on cathode contact layers C1, C2, C3, respectively. Specifically, an electrode material (e.g., a laminated film of aluminum and titanium) with a resist as a mask is patterned by lift-off.

[0091] In "Patterning of semiconductor crystals by etching to form a laminated body" Fig.33 In the S26 process shown in FIG. Fig.35 As shown, the semiconductor crystal SL is patterned by dry etching to form an island-shaped stack 11, an island-shaped stack 12, and an island-shaped stack 13. Here, the area other than the area where the elements are separated is protected by a resist, for example, by a halogen-based RIE method, the portion between the elements in the semiconductor crystal SL is completely removed in such a way that the growth substrate SK is exposed between the elements. The growth substrate SK itself may also be etched to form projections and depressions on the growth substrate SK. In this embodiment, in order to achieve good electrical element separation and optical element separation, etching is performed in such a way that the surface of the growth substrate SK is exposed, and an island-shaped stack 11, an island-shaped stack 12, and an island-shaped stack 13 are formed on the growth substrate SK. In addition, the island-shaped stack 11, the island-shaped stack 12, and the island-shaped stack 13 each have a side wall W.

[0092] "Forming an insulating film covering the side walls of each stacked body" Fig.33 In the S28 process shown in FIG. Fig.36As shown, an insulating film PF is formed to cover the side walls W of each island-shaped stack 11, island-shaped stack 12, and island-shaped stack 13, and light-emitting elements D1, D2, and D3 are obtained. Here, after a mask covering the anodes A1, A2, A3 and the cathodes K1, K2, and K3 is formed by photolithography or the like, silicon oxide covering the side walls W is formed by electron beam evaporation as the insulating film PF. The insulating film PF has the function of preventing short circuits between elements and preventing oxidation. In this embodiment, the case where the insulating film PF is a silicon oxide film is used as an example for explanation, but it is not limited to this. The insulating film PF may also be a film including any one of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, and an aluminum oxide film. In addition, in a direction perpendicular to the side walls W of the island-shaped stacks 11, 12, and 13, the insulating film PF is preferably formed with a thickness of 3 nm or more and 100 nm or less. When the insulating film PF is formed to cover the side walls W of the island-shaped stacked bodies 11, 12, and 13 as in the present embodiment, the selection range of the material of the light absorber LA described later becomes wider. That is, when the insulating film PF is formed, a conductive material can be selected as the material of the light absorber LA. In addition, when a material with high insulation is selected as the material of the light absorber LA, the above-mentioned Fig.33 The S28 step shown.

[0093] "Forming a light absorber between the stacked layers" Fig.33 In the S30 process shown in FIG. Fig.31 as well as Fig.37 As shown, the light absorber LA can be formed, for example, to be less than the height corresponding to the thickness from the surface of the semiconductor layer, i.e., the buffer layer BA, on the display surface DM side, which is closest to the light emitting surface of the light emitting layers E1, E2, and E3, i.e., the display surface DM, to the surface of the light emitting layer E1, which is closest to the display surface DM, on the display surface DM side. In the present embodiment, the case where the light absorber LA is formed at a height corresponding to the thickness from the surface of the buffer layer BA on the display surface DM side to the surface of the light emitting layer E1 on the display surface DM side is cited as an example for explanation, but it is not limited to this.

[0094] Fig.54 This is a plan view schematically showing the structure of another display area panel 1 a according to the fourth embodiment. Fig.55 This is a plan view schematically showing the structure of still another display panel 1 b according to the fourth embodiment. Fig.54The display panel 1a shown includes a light-emitting element D1, a light-emitting element D2, and a light-emitting element D3. The light-emitting element D1 has a first stack (buffer layer BA, base layer U1, cathode contact layer C1, light-emitting layer E1, intermediate layer G1, p-type layer H1, tunnel junction layer T1, and anode contact layer F1) including a light-emitting layer E1 as an island-shaped stack 11. The light-emitting element D2 is an island-shaped stack 12, including: the first stack, and a second stack (base layer U2, cathode contact layer C2, light-emitting layer E2, intermediate layer G2, p-type layer H2, tunnel junction layer T2, and anode contact layer F2), which includes a light-emitting layer E2 arranged farther from the display surface DM than the first stack. The light emitting element D3 is an island-shaped stack 13, including: the first stack, the second stack and the third stack (base layer U3, cathode contact layer C3, light emitting layer E3, intermediate layer G3, p-type layer H3, tunnel junction layer T3 and anode contact layer F3), which includes a light emitting layer E3 arranged farther from the display surface DM than the second stack. In addition, the light absorber LA can also be formed to be less than the height corresponding to the thickness from the surface of the buffer layer BA on the display surface DM side of the semiconductor layer closest to the display surface DM to the surface of the light emitting layer E3 on the display surface DM side. In the display panel 1a, the light absorber LA is formed with a height corresponding to the thickness from the surface of the buffer layer BA on the display surface DM side of the semiconductor layer closest to the display surface DM to the surface of the light emitting layer E3 on the display surface DM side. It is not limited to this, as Fig.55 As in the display panel 1 b shown in the figure, the light absorber LA may be filled so as to completely fill the spaces between the island-shaped stacked bodies 11 , 12 , and 13 provided in the plurality of light emitting elements D1 , D2 , and D3 .

[0095] As the light absorber LA, an organic compound or an inorganic compound can be used. For example, a light absorber having a molecular structure containing a pyridine skeleton can be used. In the present embodiment, as the light absorber LA, a black dye called black crystals (trade name: N749, material name: ruthenium 620, tri(N,N,N-tributyl-1-butylammonium)[[2,2"6',2"-terpyridine]-4,4',4"-tricarboxylate-(3-)-N1,N1',N1"]tri(thiocyanate-N)ruthenate hydrogen salt (4-)) is used as an insulating compound, for example, as shown in the following (chemical formula 1). The molar absorbance of the black dye shown in the following (chemical formula 1) in the visible light region is 3×10 -3 ~7×10 -3(1 / M·cm), the molecular structure of the black dye shown in the following (chemical formula 1) is a structure containing three pyridine skeletons and bonded with nitrogen and multiple functional groups. In addition, as in the present embodiment, when an organic compound is used as the light absorber LA, even if the anode A1, A2, A3, and the cathode K1, K2, and K3 are covered by the light absorber LA during the process, the light absorber LA on the anode A1, A2, A3, and the cathode K1, K2, and K3 can be oxidized and removed by ashing while using a metal mask having openings on the anode A1, A2, A3, and the cathode K1, K2, and K3 to protect the surface of the element.

[0096] [Chemistry 1] The light absorber LA may include one or more selected from modified acrylic resins, epoxy resins, polyurethane resins, cyanoacrylate resins, fluoroethylene resins, silicone resins, polyvinyl alcohol (PVA) and polyvinyl chloride (PVC). In addition, the light absorber LA may include one or more selected from azo dyes, quinone dyes, indigo dyes, polymethine dyes, styrene dyes, azo pigments, quinone pigments, indigo pigments, polymethine pigments and styrene pigments. In addition, the light absorber LA may contain one or more selected from carbon materials, metal sulfides and semiconductor materials having absorption in the visible light region.

[0097] “Mounting the light emitting elements (first to third light emitting elements) on the driving substrate” Fig.33 In the S32 process shown in FIG. Fig.31 As shown in FIG. 1 , the light emitting elements D1 , D2 , and D3 are mounted on a driving substrate DK including a driving circuit via a conductive adhesive layer JC to obtain a display panel 1 . The conductive adhesive layer JC can be made of solder or an anisotropic conductive adhesive material. Figure 1 as well as Figure 7 In the display panel 1 shown, the structure is such that the holes of the anodes A1, A2, A3 are injected into the p-type layers H1, H2, H3 via the anode contact layers F1, F2, F3 and the tunnel junction layers T1, T2, T3 which are n-type semiconductor layers. Due to such a structure, the anodes A1, A2, A3 and the cathodes K1, K2, K3 can be formed simultaneously using the same material, and the process can be simplified compared to the conventional method in which the anode and the cathode are formed by different processes and different materials. In addition, it has the following advantages: the p-type (semiconductor) layer which is easily increased in resistance by dry etching and mechanical polishing can be not exposed, and the electrical characteristics of the light-emitting element are stabilized. In addition, in Fig.33After the step S32 shown, the growth substrate SK may be removed by peeling off the island-shaped stack 11, the island-shaped stack 12, the island-shaped stack 13, the insulating film PF and the light absorber LA using a laser lift-off method or the like.

[0098] Fig.38 is Fig.33 After the S30 step shown in the figure, the anode and cathode are formed and the anode and cathode are formed. Fig.33 The top view is a view of the wafer in a state before the S32 step.

[0099] In this embodiment, if Fig.38 As shown, the island-shaped stacked body 11 of the light-emitting element D1, the island-shaped stacked body 12 of the light-emitting element D2, and the island-shaped stacked body 13 of the light-emitting element D3 each have a size of 20 μm×120 μm when viewed from above, and the stacked bodies 11, 12, 13 are respectively 10 μm apart as an example, but the present invention is not limited to this.

[0100] Fig.39 3 is a cross-sectional view showing a schematic structure of a display panel 51 of Comparative Example 4. Fig.40 This is a diagram for explaining one of the main causes of stray light generated in the display panel 1 of the fourth embodiment and the display panel 51 of the fourth comparative example. Fig.41 The display panel 51 of Comparative Example 4 is shown in FIG. Fig.40 The diagram shows a situation where the stray light generated mainly due to the stray light is visually recognized as virtual light emission in the adjacent sub-pixels including the extinguished light-emitting element. Fig.42 This is a diagram for explaining another major cause of stray light generated in the display panel 1 of the fourth embodiment and the display panel 51 of the fourth comparative example. Fig.43 The display panel 51 of Comparative Example 4 is shown in FIG. Fig.42 The diagram shows a situation where the stray light generated mainly due to the stray light is visually recognized as virtual light emission in the adjacent sub-pixels including the extinguished light-emitting element. Fig.44 3 is a diagram showing the distribution of stray light in the display panel 51 of Comparative Example 4. Fig.45 These are diagrams for explaining the distribution of stray light in the display panel according to the fourth embodiment and the reason why, in the display panel 1 according to the fourth embodiment, light emitted from a light-emitting element that is turned on can be suppressed from becoming stray light.

[0101] Fig.39 The display panel 51 of the comparative example 4 shown is different from the display panel 1 of the embodiment 4 only in that it does not include the light absorber LA. Fig.40 and Fig.41As shown, in the display panel 1 of Embodiment 4 and the display panel 51 of Comparative Example 4, among the light emitted from the end faces of the light-emitting layers E1, E2, and E3, there is a light component that is laterally transmitted to the adjacent sub-pixels, which is one of the main reasons for generating stray light. Fig.40 As shown, the light emitted from the end faces of the light-emitting layers E1, E2, and E3 can be divided into light components with an emission angle θ of 0° or near 0° (less than ±5°) and light components with an emission angle θ greater than ±5°. Fig.41 As shown, the light component with an emission angle θ of 0° or near 0° (less than ±5°) is the component that is vertically incident on the side wall of the adjacent sub-pixel. This component is hardly reflected at the element / atmosphere and atmosphere / element interface, and propagates while attenuating to a longer distance, becoming a wide stray light without a clear peak. The attenuation is caused by the semiconductors that constitute the element, especially the light-emitting layer and the p-type layer. On the other hand, a part of the light component with an emission angle θ greater than ±5° is reflected by the element / atmosphere and atmosphere / element interface, and the remaining part is transmitted and propagated. The reflected light is directed toward the growth substrate SK side or the driving substrate DK side, but the component toward the driving substrate DK is absorbed by the driving substrate DK and therefore hardly becomes stray light. On the other hand, the component toward the growth substrate SK side becomes stray light that periodically forms peaks at the position of the side wall of the element. As shown Fig.42 and Fig.43 As shown, in the display panel 1 of Embodiment 4 and the display panel 51 of Comparative Example 4, among the light emitted from the front side (driving substrate DK side) and the back side (growth substrate SK side) of the light-emitting layers E1, E2, and E3, the light component whose absolute value of the emission angle θ is greater than 0° and whose absolute value of the emission angle θ is approximately greater than 5° becomes stray light that is reflected by the electrode on the front side (driving substrate DK side) and is emitted toward the outside of the element at the same emission angle as the incident angle and has a periodic peak near the side wall of the element. On the other hand, the light component whose emission angle θ is 0° and whose absolute value of the emission angle θ is approximately less than 5° does not become stray light. Fig.44 As shown, in the display panel 51 of Comparative Example 4, when only the light emitting element D1 is turned on, there is a periodic stray light distribution corresponding to the arrangement and interval of the light emitting elements D1, D2, and D3. In the display panel, stray light is the main cause of reduced contrast, virtual images, and blurred light.

[0102] Therefore, in the display panel 1 of the present embodiment, by providing the above-mentioned light absorber LA, it is possible to suppress the light emitted from the light-emitting element that is turned on from becoming stray light. Fig.42 The light component whose absolute value of the above-mentioned angle of incidence θ is greater than 0° and whose absolute value of the angle of incidence θ is approximately greater than 5°, i.e., the light component reflected by the electrode on the surface side (driving substrate DK side) and directed toward the outside of the element at the same angle of incidence as the incident angle, is as follows: Fig.45As shown, it is reflected by the electrode on the surface side (driving substrate DK side) and incident on the light absorber LA. Such light components are incident at a certain angle in the stacking direction of the light emitting element and refracted to change the direction of travel. Since they propagate through the light absorber LA in the longitudinal direction, they are greatly absorbed and attenuated. In addition, the stray light reaching the interface between the light absorber LA and the adjacent light emitting element is reflected and refracted, and then changes direction of propagation, and is incident on the light absorber LA before reaching the light emitting element and is attenuated. Similarly, according to Fig.40 , the light component whose emission angle θ is 0° or near 0° (± less than 5°) also enters the light absorber LA at a certain angle, and is therefore attenuated in the same manner. As described above, according to the display panel 1 of this embodiment having the light absorber LA, the intensity of stray light with periodic peaks is significantly reduced due to the attenuation and refraction of the light component caused by the light absorber LA.

[0103] Fig.46 It shows that Fig.57 The diagram shows the distribution of stray light obtained by optical calculation using the display panel 52 of Comparative Example 5 as a model. Fig.47 It means that the light absorber LA including the refractive index of 2.47 and the transmittance of 0.9 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel 2 according to the fifth embodiment as a model. Fig.48 It means that the light absorber LA including the refractive index of 2.47 and the transmittance of 0.7 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel 2 according to the fifth embodiment as a model. Fig.49 It means that the light absorber LA including the refractive index of 2.47 and the transmittance of 0.3 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel 2 according to the fifth embodiment as a model. Fig.50 It means that the light absorber LA including the refractive index of 2.47 and the transmittance of 0.1 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel 2 according to the fifth embodiment as a model.

[0104] Here, it means Fig.57 The display panel 52 of the comparative example 5 shown in FIG. Fig.56 The display panel 2 of the fifth embodiment shown is an example in which the refractive index and transmittance of the light absorber LA that exerts its effect are optically modeled.

[0105] like Fig.46 As shown, by Fig.57The distribution of stray light obtained by optical calculation of the display panel 52 of the comparative example 5 shown in FIG. 5 shows a stray light distribution having a peak at the side wall position of the light emitting element D1'. Fig.58 The experimental results are consistent with those shown. Fig.46 The intensity ratio of the light-emitting sub-pixel to the spike-shaped stray light is also Fig.58 The experimental results shown are roughly consistent, and if the optical model is accurately constructed, it can be confirmed that stray light can be calculated by ray tracing.

[0106] Figures 47 to 50 They represent the steps of converting the light absorber LA into Fig.56 The distribution of stray light obtained by optical calculation of the display panel 2 of the fifth embodiment shown in the figure shows the calculation results of changing the transmittance of the light absorber LA to 0.9, 0.7, 0.3 and 0.1 while fixing the refractive index of the light absorber LA to 2.47, the same as GaN, in order to confirm the influence of the transmittance of the light absorber LA. In this case, since there is no difference in the refractive index of the semiconductor layer and the light absorber, the stray light will not be refracted at the interface. Therefore, it can be seen that Fig.47 When the transmittance of the light absorber LA is 0.9, the wide stray light propagating in the direction parallel to the substrate surface is not greatly attenuated. On the other hand, the transmittance of the light absorber LA is large, and it can be seen that Fig.48 When the transmittance of the light absorber LA is 0.7, the peak-shaped stray light intensity decreases as the transmittance decreases from 0.9 to 0.7. Fig.49 The transmittance of the light absorber LA is shown as 0.3 and Fig.50 When the transmittance of the light absorber LA shown is 0.1, due to the reduction in transmittance to below 0.3, in addition to the peak-shaped stray light, the diffuse stray light is also greatly attenuated, and the stray light can be suppressed to the extent that it exists roughly locally between the light-emitting elements adjacent to the light-emitting elements.

[0107] Therefore, the transmittance of the light absorber LA in the visible light region is preferably 0.7 or less, and more preferably 0.3 or less.

[0108] Fig.51 This means that the light absorber including the refractive index of 1.5 and the transmittance of 1 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel of Embodiment 5 as a model. Fig.52 This means that the light absorber having a refractive index of 3.47 and a transmittance of 1 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel 2 according to the fifth embodiment as a model. Fig.53This means that the light absorber including the refractive index of 3.47 and the transmittance of 0.3 Fig.56 The diagram shows the distribution of stray light obtained by optical calculation using the display panel 2 according to the fifth embodiment as a model.

[0109] Fig.51 and Fig.52 The light absorber LA is respectively shown as follows: Fig.56 The distribution of stray light obtained by optical calculation of the display panel 2 of the fifth embodiment shown in the figure shows the calculation results of changing the refractive index of the light absorber LA to 1.5 and 3.47 while fixing the transmittance of the light absorber LA to 1 in order to confirm the influence of the refractive index of the light absorber LA. Fig.51 As shown in FIG. 1 , it can be seen that when the refractive index of the light absorber LA is smaller than the refractive index of the semiconductor layer (e.g., 2.47), the adjacent sub-pixel generating the spike-shaped stray light is largely suppressed in the adjacent sub-pixel, but on the other hand, the wide stray light is hardly suppressed from propagating to a long distance. On the contrary, Fig.52 As shown, by using a light absorber LA having a refractive index greater than that of the semiconductor (e.g., 2.47), wide stray light can be suppressed. This is because, when the refractive index of the light absorber LA is smaller than that of the semiconductor layer, light incident at a small angle relative to the side wall of the stacked body of the light-emitting element is parallel to the substrate surface and is close to the substrate surface, it is refracted from the light absorber LA toward the atmosphere. On the other hand, when the refractive index of the light absorber LA is greater than that of the semiconductor layer, it is refracted toward the substrate surface side and multiple reflections are made at small angles between adjacent sub-pixels, thereby attenuating the stray light. Wide stray light that spreads over a wide range is the main cause of reducing the contrast in the display panel, but it can be suppressed by making the refractive index of the light absorber LA greater than that of the semiconductor layer and increasing the difference.

[0110] In summary, from the viewpoint of suppressing wide stray light propagating over a wide range, the refractive index of the light absorber LA is preferably higher than that of the light absorber LA. Fig.56 The refractive index of the material of the laminated body 11 ′ shown is greater than 0.1 or more, and more preferably greater than 1.5 or more.

[0111] In addition, as described above, from the viewpoint of suppressing the spike-shaped stray light, the refractive index of the light absorber LA is preferably greater than that of the light absorbing member LA. Fig.56 The refractive index of the material of the laminated body 11 ′ shown is smaller than 0.1 or more, and more preferably smaller than 1.5 or more.

[0112] like Fig.53 As shown, in the case of a light absorber LA having a refractive index of 3.47 and a transmittance of 0.3 Fig.26In the distribution of stray light obtained by optical calculation of the model for the display panel 2 of the fifth embodiment shown, the refraction effect and the absorption effect can be obtained, and it can be confirmed that both the peak-shaped stray light and the broad stray light can be effectively suppressed.

[0113] In summary, the transmittance of the light absorber LA in the visible light region is less than 0.3, and the refractive index of the light absorber LA is preferably Fig.56 The refractive index of the material constituting the stacked body 11 ′ shown is greater than or equal to 0.1, and more preferably greater than or equal to 1.5.

[0114] [Implementation method 5] Fig.56 This is a cross-sectional view showing a schematic structure of a display panel 2 according to Embodiment 5. Fig.57 3 is a cross-sectional view showing a schematic structure of a display panel 52 of Comparative Example 5. Fig.58 It is shown in Fig.56 The display panel 2 of the fifth embodiment shown in FIG. Fig.57 In each of the display panels 52 of the comparative example 5 shown, Fig.32 A diagram showing the distribution of stray light in the H1 direction. Fig.59 It is shown in Fig.56 The display panel 2 of the fifth embodiment shown in FIG. Fig.57 In each of the display panels 52 of the comparative example 5 shown, Fig.32 A diagram showing the distribution of stray light in the H2 direction.

[0115] Fig.56 The display panel 2 of the fifth embodiment shown in FIG. Fig.57 The display panel 52 of the comparative example 5 shown is different from the display panel 1 described in the above-mentioned embodiment 4 and the display panel 51 of the comparative example 4 in that each of the display panels 52 is a monochrome display panel including a plurality of light-emitting elements that emit light in one color. Fig.56 The display panel 2 of the fifth embodiment shown in FIG. Fig.57 The display panel 52 of the comparative example 5 shown is a blue monochrome display panel. Fig.56 The display panel 2 of the fifth embodiment shown is different from the display panel 2 of the embodiment shown in FIG. Fig.57 The display panel 52 of Comparative Example 5 shown is different.

[0116] like Fig.58 as well as Fig.59 As shown, in Fig.32 The distribution of stray light in the H1 direction and Fig.32 In any of the distributions of stray light in the H2 direction shown, Fig.56In the case of the display panel 2 of the fifth embodiment shown in FIG. 1 , it is found that both the periodic peak-shaped stray light and the broad stray light are reduced by providing the light absorber LA. Fig.57 Compared with the display panel 52 of the comparative example 5 shown in FIG. Fig.56 In the case of the display panel 2 according to the fifth embodiment shown, it can be confirmed that the intensity of stray light is reduced to at least 1 / 4.

[0117] In addition, Fig.56 In the display panel 2 of the fifth embodiment shown, a case where the light absorber LA is filled in a manner of completely burying the island-shaped stacked bodies 11' respectively possessed by a plurality of light-emitting elements D1' is cited as an example for explanation, but it is not limited to this. The light absorber LA may, for example, be formed at a height below a height corresponding to the thickness from the surface of the base layer U1 on the display surface DM side to the surface of the light-emitting layer E1 on the display surface DM side closest to the display surface DM. The base layer U1 is formed at a height below a height corresponding to the thickness from the surface of the base layer U1 on the display surface DM side, i.e., the semiconductor layer closest to the display surface DM, i.e., the surface from which light of the light-emitting layer E1 is emitted, to the surface of the light-emitting layer E1 on the display surface DM side closest to the display surface DM. The light absorber LA may also be formed at a height corresponding to the thickness from the surface of the base layer U1 on the display surface DM side to the surface of the light-emitting layer E1 on the display surface DM side.

[0118] [Implementation method 6] Fig.60 This is a cross-sectional view showing a schematic structure of a display panel 3 according to Embodiment 6. Fig.61 3 is a cross-sectional view showing a schematic structure of a display panel 53 of Comparative Example 6.

[0119] Fig.60 The display panel 3 and Fig.61 The display panel 53 of the comparative example 6 shown is different from the display panel 1 described above in the fourth embodiment and the display panel 51 of the comparative example 4 in that a plurality of chips including a light emitting element D1' as a blue light emitting element, a chip including a light emitting element D2' as a green light emitting element, and a chip including a light emitting element D3' as a red light emitting element are manufactured, and the chips are neatly arranged on a driving substrate DK in units of chips, and are bonded to the driving substrate DK via a conductive adhesive layer JC. In addition, Fig.60 The display panel 3 of the sixth embodiment shown in the figure is different from the display panel 3 of the sixth embodiment in that it includes a light absorber LA. Fig.61 The display panel 53 of Comparative Example 6 shown is different.

[0120] Although not shown in the figure, Fig.32 The distribution of stray light in the H1 direction and Fig.32In any of the distributions of stray light in the H2 direction shown, Fig.60 In the case of the display panel 3 of the sixth embodiment shown in FIG. 1 , it is found that both the periodic peak-shaped stray light and the broad stray light are reduced by providing the light absorber LA. Fig.61 Compared with the display panel 53 of the comparative example 6 shown in FIG. Fig.60 In the case of the display panel 3 according to the sixth embodiment shown, the intensity of stray light can be reduced to at least 1 / 4.

[0121] In addition, Fig.60 In the case of the manufacturing process of the display panel 3 of the sixth embodiment shown in FIG. Fig.33 In the step S26 shown in the figure, the plurality of light emitting elements D1', D2', and D3' are individually chipped, so that Fig.33 Prior to the step S30 shown in FIG. 1 , it is necessary to mount the plurality of light emitting elements D1 ′, D2 ′, and D3 ′ in the form of chips on the driving substrate DK. Fig.33 In addition, the S32 step is omitted. Fig.33 In the S28 step shown in FIG. Fig.33 In the step S30 shown, the light absorber LA can be filled between the island-shaped stacked bodies by utilizing the gaps GP between the growth substrates SK generated in the step S32 described above.

[0122] [Implementation method 7] Fig.62 is a cross-sectional view showing a schematic structure of a display panel 4 according to Embodiment 7. Fig.62 In the figure, the anodes A1 to A3 , the cathodes K1 to K3 , and the insulating film PF are omitted.

[0123] like Fig.62 As shown, the display panel 4 includes a light emitting element D1, a light emitting element D2, and a light emitting element D3. The light emitting element D1 includes an island-shaped stack 11 composed of a plurality of stacked semiconductor layers including a light emitting layer E1, an anode A1, and a cathode K1; the light emitting element D2 includes an island-shaped stack 12 composed of a plurality of stacked semiconductor layers including light emitting layers E1 and E2, an anode A2, and a cathode K2; the light emitting element D3 includes an island-shaped stack 13 composed of a plurality of stacked semiconductor layers including light emitting layers E1 to E3, an anode A3, and a cathode K3. A scatterer SCB is provided between the island-shaped stacks 11 to 13 respectively provided by the plurality of light emitting elements D1 to D3. The scatterer SCB contains a material different from the material constituting the stacks 11 to 13 and scatters light in the visible light region.

[0124] In this embodiment, the example is given of a light-emitting element (first light-emitting element) D1 having an island-shaped stack 11 composed of a plurality of stacked semiconductor layers including a blue light-emitting layer E1, and the light L1 from the light-emitting layer E1 is a blue light-emitting element; the light-emitting element (second light-emitting element) D2 having an island-shaped stack 12 composed of a plurality of stacked semiconductor layers including a green light-emitting layer E2 and a non-luminous light-emitting layer E1, and the light L2 from the light-emitting layer E2 is a green light-emitting element; the light-emitting element (third light-emitting element) D3 having an island-shaped stack 13 composed of a plurality of stacked semiconductor layers including a red light-emitting layer E3 and non-luminous light-emitting layers E1 and E2, and the light L3 from the light-emitting layer E3 is a red light-emitting element, but the present invention is not limited thereto.

[0125] like Fig.62 As shown, between the island-shaped stacked bodies 11 to 13 respectively provided with the plurality of light-emitting elements D1 to D3, there is provided a recessed portion SC including a scatterer SCB having a height lower than the maximum height portion of each of the stacked bodies 11 to 13. In the present embodiment, the case where the recessed portion SC including the scatterer SCB is formed using a mixed material of the scatterer SCB and the resin material RS is described as an example, but the present invention is not limited thereto, and the recessed portion SC including the scatterer SCB may be formed only by the scatterer SCB. In addition, in the present embodiment, a transparent resin material having a high transmittance in the visible light region is used as the resin material RS.

[0126] like Fig.62 As shown, the height of the recess SC in the display panel 4 can also be formed to be less than the height corresponding to the thickness from the surface of the semiconductor layer on the display surface DM side closest to the display surface DM to the surface of the light-emitting layer E1 on the display surface DM side closest to the display surface DM, wherein the display surface DM is the surface from which light from the light-emitting layers E1 to E3 is emitted. In the present embodiment, the height of the recess SC is formed by the height from the growth substrate SK to the surface on the display surface DM side of the light-emitting layer E1 included in the island-shaped stack 11 to 13 closest to the display surface DM, but is not limited to this. In addition, although not shown in the figure, as described later, when the growth substrate SK (for example, a C-plane sapphire substrate) is removed, the surface of the semiconductor layer closest to the display surface DM of the growth substrate SK becomes a new display surface before the growth substrate SK is removed.

[0127] In this embodiment, if Fig.62 As shown, the bottom surface of the recessed portion SC in the display panel 4 is an example of a surface on the opposite side of the display surface DM of the growth substrate SK, but the present invention is not limited thereto. Although not shown, the bottom surface of the recessed portion SC may also be formed on the surface on the opposite side of the display surface DM of the growth substrate SK.

[0128] Fig.63 yes Fig.62 A plan view of a display surface SM of a display panel 4 is shown.

[0129] In this embodiment, if Fig.63 As shown, a pixel PI includes a red sub-pixel RSUB, a green sub-pixel GSUB, and a blue sub-pixel BSUB, the blue sub-pixel BSUB includes a light-emitting element (first light-emitting element) D1 as a blue light-emitting element, the green sub-pixel GSUB includes a light-emitting element (second light-emitting element) D2 as a green light-emitting element, and the red sub-pixel RSUB includes a light-emitting element (third light-emitting element) D3 as a red light-emitting element, but the present invention is not limited thereto. For example, a pixel PI may also include sub-pixels of other colors other than the red sub-pixel RSUB, the green sub-pixel GSUB, and the blue sub-pixel BSUB.

[0130] Fig.62 The light emitting elements D1 to D3 shown in the figure are separated into components, so that Fig.63The sub-pixel unit shown controls the light emission. In the present embodiment, a display panel 4 manufactured by manufacturing a plurality of monolithic wafers, arranging the plurality of wafers on a driving substrate DK in wafer units, and bonding the wafers to the driving substrate DK via a conductive adhesive layer JC is cited as an example for explanation, wherein the monolithic wafer is provided with a plurality of light-emitting elements D1 to D3 that emit light in different colors on a growth substrate SK (e.g., a C-plane sapphire substrate), but is not limited thereto. For example, as in the display panel 5 of embodiment 10 described later, a plurality of monolithic wafers in which a plurality of light-emitting elements D1' that emit light in the same color are provided on a growth substrate SK may be manufactured, and the plurality of wafers may be arranged on a driving substrate DK in wafer units, and bonded to the driving substrate DK via a conductive adhesive layer JC. In addition, for example, as in the display panel 6 of Embodiment 11 described later, a plurality of chips including a light-emitting element D1' as a blue light-emitting element, a chip including a light-emitting element D2' as a green light-emitting element, and a chip including a light-emitting element D3' as a red light-emitting element may be manufactured, and the chips may be neatly arranged on a driving substrate DK in units of chips and bonded to the driving substrate DK via a conductive adhesive layer JC. In addition, the display panels 1, 1a, 1b described in this embodiment and the display panel 6 described in Embodiment 11 are display panels having a plurality of light-emitting elements that emit light in different colors, and therefore, by using one display panel, for example, AR (Augmented Reality), VR (Virtual Reality), and small to large color display devices may be realized. On the other hand, since the display panel 5 described in embodiment 10 is a monochrome display panel having a plurality of light-emitting elements that emit light in one color, by using, for example, three display panels, namely, a red monochrome display panel, a green monochrome display panel, and a blue monochrome display panel, and optical system components such as mirrors, it is possible to realize, for example, AR (Augmented Reality), VR (Virtual Reality), and small to large color display devices.

[0131] The following is based on Figure 64 to Figure 68 , the manufacturing process of the display panel 4 of this embodiment is described.

[0132] Fig.64 It is used to illustrate Fig.62 A diagram showing a method for manufacturing the display panel 4 is shown. Fig.65 It is used to illustrate Fig.64 The diagrams of the S20 step, the S22 step, and the S24 step are shown. Fig.66 It is used to illustrate Fig.64 The diagram of the S26 step is shown. Fig.67It is used to illustrate Fig.64 The diagram of the S28 step is shown. Fig.68 It is used to illustrate Fig.64 The diagram of the S30 step is shown.

[0133] exist Fig.64 In the step S20 of "growing a semiconductor crystal on a growth substrate", as shown in FIG. Fig.65 As shown, a semiconductor crystal SL is epitaxially grown on a growth substrate SK (e.g., a C-plane sapphire substrate) using an MOCVD device or the like. The semiconductor crystal SL may be, for example, a nitride semiconductor crystal. As nitride semiconductors, in addition to GaN-based semiconductors, AlN (aluminum nitride) and InN (indium nitride) may also be listed.

[0134] like Fig.65 As shown, the S20 process of forming the semiconductor crystal SL includes: a first process of sequentially forming a buffer layer BA, a base layer U1, a cathode contact layer C1, a light-emitting layer E1, an intermediate layer G1, a p-type layer H1, a tunnel junction layer T1, and an anode contact layer F1; a second process of sequentially forming a base layer U2, a cathode contact layer C2, a light-emitting layer E2, an intermediate layer G2, a p-type layer H2, a tunnel junction layer T2, and an anode contact layer F2; and a third process of sequentially forming a base layer U3, a cathode contact layer C3, a light-emitting layer E3, an intermediate layer G3, a p-type layer H3, a tunnel junction layer T3, and an anode contact layer F3. Each of the above-mentioned first to third processes can be performed in sequence in an MOCVD device, for example.

[0135] The buffer layer BA may also be a gallium nitride crystal (e.g., 40 nm thick) formed at a low temperature (e.g., below 600°C). The base layers U1, U2, and U3 may be undoped gallium nitride crystals (e.g., 2 μm thick). The cathode contact layers C1, C2, and C3 may be n-type gallium nitride crystals (e.g., 2 μm thick). The light-emitting layers E1, E2, and E3 may be active layers of a MQW (multiple quantum well) structure. For example, as a light-emitting layer E1 that emits blue light with a wavelength of about 450 nm, indium gallium nitride with a thickness of 50 nm and an In (indium) composition ratio of 20% (a mixed crystal with an atomic ratio of In to Ga of 1:4) may be used. For example, as a light-emitting layer E2 that emits green light with a wavelength of about 550 nm, indium gallium nitride (mixed crystal) with an In composition ratio of 25% may be used. For example, as a light-emitting layer E3 that emits red light with a wavelength of about 630 nm, indium gallium nitride (mixed crystal) with an In composition ratio of 30% may be used. The intermediate layers G1, G2, and G3 may be p-type aluminum gallium nitride crystals (e.g., 20 nm thick). The p-type layers H1, H2, and H3 may be p-type gallium nitride crystals (e.g., 120 nm thick). The tunnel junction layers T1, T2, and T3 may be undoped gallium nitride crystals (e.g., 25 nm thick). The anode contact layers F1, F2, and F3 may be n-type gallium nitride crystals (e.g., 400 nm thick).

[0136] exist Fig.64 In the step S22 of "patterning the semiconductor crystal by etching to expose the anode contact layer and the cathode contact layer", as shown in FIG. Fig.65 As shown, the semiconductor crystal SL is patterned by dry etching to expose the cathode contact layers C1, C2, C3 and the anode contact layers F1, F2, F3. In this process, an inorganic film (silicon oxide film, nickel film, etc.) patterned by a resist or a stripping method can be used as an etching mask. Reactive ion etching (RIE) using halogens such as chlorine or fluorine can be applied to dry etching. In addition, the etching mask is removed by removal, acidic solution, etc.

[0137] exist Fig.64 In the step S24 of "forming an anode on the anode contact layer and forming a cathode on the cathode contact layer at the same time", as shown in FIG. Fig.65 As shown, anodes A1, A2, A3 are formed on anode contact layers F1, F2, F3, respectively, and cathodes K1, K2, K3 are formed on cathode contact layers C1, C2, C3, respectively. Specifically, an electrode material (e.g., a laminated film of aluminum and titanium) with a resist as a mask is patterned by a lift-off method.

[0138] exist Fig.64 In the step S26 of "patterning the semiconductor crystal by etching to form a stacked body", as shown in FIG. Fig.66 As shown, the semiconductor crystal SL is patterned by dry etching to form an island-shaped stack 11, an island-shaped stack 12, and an island-shaped stack 13. Here, the area other than the area where the elements are separated is protected by a resist, for example, by a halogen-based RIE method, the portion between the elements in the semiconductor crystal SL is completely removed in such a way that the growth substrate SK is exposed between the elements. The growth substrate SK itself may also be etched to form projections and depressions on the growth substrate SK. In this embodiment, in order to achieve good electrical element separation and optical element separation, etching is performed in such a way that the surface of the growth substrate SK is exposed, and an island-shaped stack 11, an island-shaped stack 12, and an island-shaped stack 13 are formed on the growth substrate SK. In addition, the island-shaped stack 11, the island-shaped stack 12, and the island-shaped stack 13 each have a side wall W.

[0139] exist Fig.64 In the step S28 of "forming an insulating film covering the side walls of each stacked body", as shown in FIG. Figure 6 As shown, an insulating film PF is formed to cover the side walls W of the island-shaped stack 11, the island-shaped stack 12, and the island-shaped stack 13, respectively, to obtain light-emitting elements D1, D2, and D3. Here, after a mask covering the anodes A1, A2, A3 and the cathodes K1, K2, and K3 is formed by photolithography or the like, silicon oxide covering the side walls W is formed by electron beam evaporation as the insulating film PF. The insulating film PF has the function of preventing short circuits between elements and preventing oxidation. In this embodiment, the case where the insulating film PF is a silicon oxide film is described as an example, but it is not limited to this. The insulating film PF may also be a film comprising any one of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, and an aluminum oxide film. In addition, in a direction perpendicular to the side walls W of the island-shaped stacks 11, 12, and 13, the insulating film PF is preferably formed with a thickness of 3 nm or more and 100 nm or less. When an insulating film PF is formed to cover the side walls W of the island-shaped stacked bodies 11, 12, and 13 as in the present embodiment, the selection width of the materials of the scatterer SCB, the resin material RS, and the light absorber LA described later becomes wider. That is, when an insulating film PF is formed, a conductive material can be selected as the material of the scatterer SCB, the resin material RS, and the light absorber LA. In addition, when a material with high insulation properties is selected as the material of the scatterer SCB, the resin material RS, and the light absorber LA, the above-mentioned Fig.64 The S28 step shown.

[0140] exist Fig.64 In the step S30 of "forming a scatterer for scattering light between the laminated bodies", as shown in FIG. Fig.62 and Fig.68As shown, the height of the recess SC from the growth substrate SK may be, for example, the height from the growth substrate SK to the surface on the display surface DM side of the light emitting layer E1 closest to the display surface DM included in the island-shaped stacked bodies 11 to 13 , but is not limited thereto.

[0141] Fig.77 This is a cross-sectional view schematically showing the structure of another display panel 4a according to the seventh embodiment. Fig.78 This is a cross-sectional view schematically showing the structure of yet another display panel 4b according to the seventh embodiment. Fig.77 The display panel 4a shown includes a light-emitting element D1, a light-emitting element D2, and a light-emitting element D3. The light-emitting element D1 is an island-shaped stack 11, which includes a first stack (buffer layer BA, base layer U1, cathode contact layer C1, light-emitting layer E1, intermediate layer G1, p-type layer H1, tunnel junction layer T1, and anode contact layer F1) including a light-emitting layer E1. The light-emitting element D2 is an island-shaped stack 12, which includes the first stack and a second stack (base layer U2, cathode contact layer C2, light-emitting layer E2, intermediate layer G2, p-type layer H2, tunnel junction layer T2, and anode contact layer F2) including a light-emitting layer E2 disposed farther from the display surface DM than the first stack. The light emitting element D3 is an island-shaped stack 13, comprising the first stack, the second stack, and a third stack (base layer U3, cathode contact layer C3, light emitting layer E3, intermediate layer G3, p-type layer H3, tunnel junction layer T3, and anode contact layer F3) including a light emitting layer E3 disposed farther from the display surface DM than the second stack. Furthermore, the recess SC including the scatterer SCB having a height lower than the maximum height portion of the island-shaped stack 13 provided in the light emitting element D3 may also be formed to be less than a height corresponding to the thickness from the surface of the buffer layer BA on the display surface DM side of the semiconductor layer closest to the display surface DM as the light emitting surface of the light emitting layers E1 to E3 to the surface of the light emitting layer E3 on the display surface DM side. In the display panel 4a, the recess SC including the scatterer SCB is formed to a height corresponding to the thickness from the surface of the buffer layer BA on the display surface DM side of the semiconductor layer closest to the display surface DM to the surface of the light emitting layer E3 on the display surface DM side. This is not limited to this, and may also be as follows. Fig.78 As in the display panel 4 b shown in the figure, the recessed portion SC including the scattering body SCB is provided so as to completely fill the space between the island-shaped stacked bodies 11 , 12 , and 13 provided in the plurality of light emitting elements D1 , D2 , and D3 .

[0142] In this embodiment, as the scatterer SCB, insulating SiO2 particles with an average particle size of 450nm are used, but the present invention is not limited to this. In this embodiment, as described above, the insulating SiO2 particles are mixed with a transparent resin material as the resin material RS for use. Fig.78 When the recessed portion SC including the scatterer SCB is provided so as to completely fill the space between the island-shaped stacked bodies 11, 12, and 13 as in the display panel 4b shown, the recessed portion SC including the scatterer SCB may be formed using only insulating SiO2 particles.

[0143] The maximum length of the scatterer SCB can be greater than 5nm and less than 5μm. The scatterer SCB can also be a nanoparticle. The scatterer SCB can also be a nanoparticle comprising a core and a shell. The scatterer SCB can also be an inorganic compound or an organic compound. The scatterer SCB can also be any one of an insulator, a semiconductor, a metal, and a metal oxide. The scatterer SCB can also be a resin containing one or more of an acryl group, an epoxy group, a urethane group, and a silicon group. In addition, the refractive index of the scatterer SCB can also be different from the refractive index of at least one layer contained in the stacks 11 to 13.

[0144] exist Fig.64 In the step S32 of "mounting the light emitting elements (first to third light emitting elements) on the driving substrate", as shown in FIG. Fig.62 As shown in FIG. 1 , the light emitting elements D1, D2, and D3 are mounted on a driving substrate DK including a driving circuit via a conductive adhesive layer JC to obtain a display panel 4. The conductive adhesive layer JC can be made of solder or an anisotropic conductive adhesive material. Fig.62 as well as Figure 7 In the display panel 4 shown, the holes of the anodes A1, A2, A3 are tunnel-injected into the p-type layers H1, H2, H3 via the anode contact layers F1, F2, F3 and tunnel junction layers T1, T2, T3, which are n-type semiconductor layers. Due to such a structure, the anodes A1, A2, A3 and the cathodes K1, K2, K3 can be formed simultaneously using the same material, and the process can be simplified compared to the conventional method in which the anode and the cathode are formed by different processes and different materials. In addition, it has the following advantages: the p-type (semiconductor) layer that can be easily increased in resistance by dry etching and mechanical grinding can be not exposed, and the electrical characteristics of the light-emitting element are stabilized. In addition, in Fig.64 After the S32 step shown, the growth substrate SK may be removed by peeling off the growth substrate SK from the island-shaped stack 11, the island-shaped stack 12, the island-shaped stack 13, the insulating film PF and the recess SC including the scatterer SCB using a laser lift-off method or the like.

[0145] Fig.69is Fig.64 After the S30 step shown in the figure, the anode and cathode are formed and the anode and cathode are formed. Fig.64 The top view is a state of the wafer before the S32 step shown.

[0146] In this embodiment, if Fig.69 As shown, the case where the island-shaped stacked body 11 of the light-emitting element D1, the island-shaped stacked body 12 of the light-emitting element D2, and the island-shaped stacked body 13 of the light-emitting element D3 each have a size of 20 μm×120 μm when viewed from above, and the stacked bodies 11, 12, 13 are each 10 μm apart is taken as an example for explanation, but it is not limited to this.

[0147] Fig.70 3 is a cross-sectional view showing a schematic structure of a display panel 51 of Comparative Example 4. Fig.71 This is a diagram for explaining one of the main causes of stray light generated in the display panel 4 of Embodiment 7 and the display panel 51 of Comparative Example 4. Fig.72 It shows that in the display panel 51 of the comparative example 4, Fig.71 The diagram shows a situation where the stray light generated by the main cause is visually recognized as a sub-pixel adjacent to a light-emitting element that has been turned off is pseudo-emitting light. Fig.73 This is another diagram for explaining the main cause of the stray light generated in the display panel 4 of the seventh embodiment and the display panel 51 of the fourth comparative example. Fig.74 This shows that in the display panel 51 of Comparative Example 4, Fig.73 FIG. 1 is a diagram showing a situation where an adjacent sub-pixel including a light-emitting element that has been turned off is visually recognized as emitting pseudo-light due to stray light generated due to the cause shown. Fig.75 3 is a diagram showing the distribution of stray light in the display panel 51 of Comparative Example 4. Fig.76 These are diagrams for explaining the distribution of stray light in the display panel 4 according to the seventh embodiment and the reason why, in the display panel 4 according to the seventh embodiment, it is possible to suppress light emitted from a light-emitting element that is turned on from becoming stray light.

[0148] Fig.70 The display panel 51 of the comparative example 4 shown in FIG. 1 is different from the display panel 4 of the embodiment 7 only in that it does not include the scatterer SCB. Fig.71 and Fig.72 As shown, in the display panel 4 of Embodiment 7 and the display panel 51 of Comparative Example 4, among the light emitted from the end faces of the light-emitting layers E1, E2, and E3, there is a light component that is laterally transmitted to the adjacent sub-pixels, which is one of the main reasons for generating stray light. Fig.71As shown, the light emitted from the end faces of the light-emitting layers E1, E2, and E3 can be divided into: light components with an emission angle θ of 0° or near 0° (less than ±5°) and light components with an emission angle θ greater than ±5°. Fig.72 As shown, the light component with an emission angle θ of 0° or near 0° (less than ±5°) is the component that is vertically incident on the side wall of the adjacent sub-pixel. This component is hardly reflected at the element / atmosphere and atmosphere / element interface, and propagates while attenuating to a longer distance, becoming a wide stray light without a clear peak. The attenuation is caused by the semiconductor that constitutes the element, especially the light-emitting layer and the p-type layer. On the other hand, a part of the light component with an emission angle θ greater than ±5° is reflected by the element / atmosphere and atmosphere / element interface, and the remaining part propagates while being transmitted. The reflected light is directed toward the growth substrate SK side or the driving substrate DK side, but the component toward the driving substrate DK is absorbed by the driving substrate DK, so it hardly becomes stray light. On the other hand, the component toward the growth substrate SK side becomes stray light that periodically forms peaks at the position of the side wall of the element. As shown Fig.73 and Fig.74 As shown, in the display panel 4 of Embodiment 7 and the display panel 51 of Comparative Example 4, among the light emitted toward the front side (driving substrate DK side) and back side (growth substrate SK side) of the light-emitting layers E1, E2, and E3, the light component whose absolute value of the emission angle θ is greater than 0° and whose absolute value of the emission angle θ is approximately greater than 5° becomes stray light that is reflected by the electrode on the front side (driving substrate DK side) and is emitted toward the outside of the element at the same emission angle as the incident angle and has a periodic peak near the side wall of the element. On the other hand, the light component whose emission angle θ is 0° and whose absolute value of the emission angle θ is approximately less than 5° does not become stray light. Fig.75 As shown, in the display panel 51 of Comparative Example 4, when only the light emitting element D1 is turned on, there is a periodic distribution of stray light corresponding to the arrangement and interval of the light emitting elements D1, D2, and D3. In a display panel, stray light is the main cause of image quality degradation such as reduced contrast, virtual images, and pseudo-lighting.

[0149] Therefore, in the display panel 4 of the present embodiment, by providing the above-mentioned scatterer SCB, the light emitted from the light-emitting element that is lit is suppressed from becoming stray light. The light component incident on the scatterer SCB is multiply scattered by the scatterer SCB, so the light propagating to the adjacent sub-pixel is greatly attenuated. In addition, since the scattering of the scatterer SCB acts evenly on the incident light in all directions, it is possible to suppress both peak-shaped stray light and wide stray light at the same time.

[0150] Fig.79 This is a diagram for explaining Rayleigh scattering by a scatterer. Fig.80 This is a diagram for explaining Mie scattering by a scatterer.

[0151] If a scatterer SCB with an average particle size of 5 nm is used, stray light can be further suppressed. This is because the light generated when the size of the scatterer SCB is smaller than the emission wavelength is obtained. Fig.79 The effect based on Rayleigh scattering is shown in Figure 1, which is different from the effect produced when the size of the scatterer SCB is ≥ the emission wavelength. Fig.80 Compared with the Mie scattering shown in Figure 2, it can scatter more strongly. Fig.80 As shown, Mie scattering causes strong scattering forward, compared to this, as Fig.79 As shown, Rayleigh scattering causes isotropic scattering, thus attenuating the incident light traveling straight ahead more effectively. Fig.79 The Rayleigh scattering shown is increased in proportion to the -4th power of the wavelength, so the stray light suppression effect is increased in the order of red, green, and blue. In addition to the above effects, by using a scatterer SCB with a diameter of the order of nm smaller than the emission wavelength, the scatterer SCB can be filled without problems even if the interval between adjacent sub-pixels is reduced, so the display panel can be made highly refined. For example, if the scatterer SCB has a particle size of 5nm, it can be filled between the island-shaped stacked bodies 11 to 13 with a width of about 20nm.

[0152] [Implementation method 8] Fig.81 In addition to using Fig.62 In addition to the fact that the scatterer SCB of the display panel 4 shown in the figure is a scatterer of a large size, by Fig.62 The display panel 5 of the eighth embodiment, which is the same as the display panel 4 shown, is a diagram showing the distribution of stray light obtained by optical calculation as a model.

[0153] The display panel of this embodiment is similar to the display panel of the present invention except that the scatterer SCB having an average particle size of 600 nm is used. Fig.62 In the case of the display panel of this embodiment, the average particle size of the scatterer SCB is larger than the emission wavelength, so Fig.79 The effect of Rayleigh scattering shown is weaker, Fig.80 The Mie scattering effect shown is stronger. Fig.81 As shown, spike-shaped stray light appears between the closest sub-pixels. It can be seen from this that Embodiment 8 shows that by using a scatterer SCB with an average particle size close to the wavelength of light emission, a better stray light suppression effect can be obtained. Therefore, for red, green and blue, scatterers SCB with average particle sizes of 630nm, 550nm and 450nm can also be used, respectively. In addition, in a display panel that integrates red light-emitting elements, green light-emitting elements and blue light-emitting elements, scatterers SCB of these three sizes can also be mixed and filled between the elements in the entire area of ​​the panel.

[0154] [Implementation method 9] Fig.82 This is a cross-sectional view schematically showing the structure of a display panel 4c according to Embodiment 9. Fig.83 This is a diagram showing the distribution of stray light in the display panel 4c according to the ninth embodiment.

[0155] like Fig.82 As shown, in the concave portion SC' including the scatterer SCB, there is a light absorber LA that absorbs light in the visible light region around the scatterer SCB.

[0156] As the light absorber LA, an organic compound or an inorganic compound can be used. For example, a light absorber having a molecular structure containing a pyridine skeleton can be used. In the present embodiment, as the light absorber LA, a black dye such as a black crystal (trade name: N749, material name: Ruthenium 620, Tris(N,N,N-tributyl-1-butanaminium)[[2,2″6′,2″-terpyridine]-4,4′,4″-tricarboxylato(3-)-N1,N1′,N1″]tris(thiocyanato-N)hydrogen ruthenate(4-)) is used as an insulating compound. The molar absorbance of the black crystal in the visible light region is 3×10 -3 ~7×10 -3 (1 / ·Mcm), the molecular structure of the black crystal grains is a structure containing three pyridine skeletons and bonded with nitrogen and multiple functional groups. In addition, as in the present embodiment, when an organic compound is used as the light absorber LA, even if the anodes A1, A2, A3 and the cathodes K1, K2, K3 are covered with the light absorber LA during the process, the light absorber LA on the anodes A1, A2, A3 and the cathodes K1, K2, K3 can be oxidized and removed by ashing while using a metal mask having openings on the anodes A1, A2, A3 and the cathodes K1, K2, K3 to protect the surface of the element.

[0157] The light absorber LA may include one or more selected from modified acrylic resins, epoxy resins, polyurethane resins, cyanoacrylate resins, fluoroethylene resins, silicone resins, polyvinyl alcohol (PVA) and polyvinyl chloride (PVC). In addition, the light absorber LA may include one or more selected from azo dyes, quinone dyes, indigo dyes, polymethine dyes, styryl dyes, azo pigments, quinone pigments, indigo pigments, polymethine pigments and styryl pigments. In addition, the light absorber LA may contain one or more selected from carbon materials, metal sulfides and semiconductor materials having absorption in the visible light region.

[0158] like Fig.83 As shown, in the case of the display panel 4c, since the scatterer SCB is provided with the light absorber LA at the same time, the stray light can be more strongly suppressed compared with the structure of the scatterer SCB alone. The scattered light propagates in all directions while undergoing multiple scattering, but at this time, the light traveling in the direction of the adjacent sub-pixel is strongly absorbed by the light absorber LA, and the light is rapidly attenuated.

[0159] In addition, the concave portion SC′ including the scatterer SCB can be formed simultaneously with the light absorber LA and the scatterer SCB by mixing the scatterer SCB with a liquid dye or a liquid pigment such as black particles and applying the mixture.

[0160] [Implementation method 10] Fig.84 This is a cross-sectional view schematically showing the structure of a display panel 5 according to the tenth embodiment. Fig.85 3 is a cross-sectional view schematically showing the structure of a display panel 52 of Comparative Example 5. Fig.86 It means that by Fig.85 The display panel 52 of Comparative Example 5 shown is a diagram showing the distribution of stray light obtained by optical calculation as a model. Fig.87 It means that by Fig.84 The display panel 5 according to the tenth embodiment shown is a diagram showing the distribution of stray light obtained by optical calculation as a model.

[0161] Fig.84 The display panel 5 of the embodiment 10 shown in FIG. Fig.85 The display panel 52 of the comparative example 5 shown is a monochrome display panel including a plurality of light-emitting elements that emit light in one color, which is different from the display panel 4 of the embodiment 7 and the display panel 51 of the comparative example 4 described in the above embodiment 7. Fig.84 The display panel 5 of the embodiment 10 shown in FIG. Fig.85 The display panels 52 of the comparative example 5 shown are each blue monochrome display panels. Fig.84 The display panel 5 of the embodiment 10 shown in the figure is different from the display panel 5 of the embodiment 10 in that it has a scatterer SCB. Fig.85 The display panel 52 of Comparative Example 5 shown is different.

[0162] like Fig.86 as well as Fig.87 As shown, it can be seen that Fig.63 In any of the distributions of stray light in the H2 direction shown, Fig.87 In the case of the display panel 5 of the embodiment 10 shown in FIG. 1 , by providing the scatterer SCB, both the periodic peak-shaped stray light and the broad stray light are reduced. Fig.86Compared with the display panel 52 of the comparative example 5 shown in FIG. Fig.87 In the case of the display panel 5 according to the tenth embodiment shown, it was confirmed that the intensity of stray light was reduced to at least 1 / 10.

[0163] In addition, Fig.87 In the display panel 5 of the embodiment 10 shown, the case where the scatterer SCB is filled in a manner of completely burying the island-shaped stacked bodies 11' respectively provided with a plurality of light-emitting elements D1' is cited as an example for explanation, but the embodiment 10 is not limited to this. The scatterer SCB may be formed, for example, at a height corresponding to the thickness from the surface of the base layer U1 on the display surface DM side to the surface of the light-emitting layer E1 on the display surface DM side closest to the display surface DM, wherein the base layer U1 is the semiconductor layer closest to the display surface DM which is the surface from which light from the light-emitting layer E1 is emitted. The scatterer SCB may also be formed at a height corresponding to the thickness from the surface of the base layer U1 on the display surface DM side to the surface of the light-emitting layer E1 on the display surface DM side.

[0164] [Implementation method 11] Fig.88 This is a cross-sectional view schematically showing the structure of the display panel 6 according to the eleventh embodiment. Fig.89 This is a cross-sectional view schematically showing the structure of a display panel 53 of Comparative Example 6.

[0165] Fig.88 The display panel 6 and Fig.89 The display panel 53 of the comparative example 6 shown is different from the display panel 5 described in the embodiment 10 and the display panel 52 of the comparative example 5 in that a plurality of chips including a light emitting element D1' as a blue light emitting element, a chip including a light emitting element D2' as a green light emitting element, and a chip including a light emitting element D3' as a red light emitting element are manufactured, and the chips are arranged neatly on a driving substrate DK in units of chips, and the chips are bonded to the driving substrate DK via a conductive adhesive layer JC. In addition, Fig.88 The display panel 6 of the embodiment 11 shown is different from the display panel 6 of the embodiment 11 in that it has a scatterer SCB. Fig.89 The display panel 53 of Comparative Example 6 shown is different.

[0166] Although not shown in the figure, Fig.63 In the distribution of stray light in the H2 direction shown in Fig.88 In the case of the display panel 6 of the embodiment 11 shown in FIG. 1, by providing the scatterer SCB, both the periodic peak-shaped stray light and the broad stray light can be reduced. Fig.89 Compared with the display panel 53 of the comparative example 6 shown in FIG. Fig.88In the case of the display panel 6 of the eleventh embodiment shown, the intensity of stray light is reduced to at least 1 / 10.

[0167] In addition, Fig.88 In the case of the manufacturing process of the display panel 6 of the embodiment 11 shown in FIG. Fig.64 In the step S26 shown in the figure, the plurality of light emitting elements D1', D2', and D3' are individually chipped, so that Fig.64 Prior to the step S30 shown in FIG. 1 , it is necessary to mount the plurality of light emitting elements D1 ′, D2 ′, and D3 ′ formed into chips on the driving substrate DK. Fig.64 In addition, the S32 step is omitted. Fig.64 In the S28 step shown in FIG. Fig.64 In the step S30 shown, the gaps GP between the growth substrates SK generated in the step S32 described above can be used to fill the scatterers SCB between the island-shaped stacked bodies.

[0168] [Implementation method 12] One aspect of the present invention aims to reduce stray light in a light emitting device by a method different from the conventional method.

[0169] Embodiment 12 is described below. For ease of description, components having the same functions as those described in Embodiment 12 are denoted by the same reference numerals in the following embodiments, and their description is not repeated. For simplicity, descriptions of well-known technical matters are also appropriately omitted.

[0170] Each component, each material, and each numerical value described in this specification are merely illustrative unless there is any contradiction in the content. Therefore, unless there is any contradiction in the content, for example, the positional relationship and connection relationship of each component are not limited to the examples in each figure. In addition, the figures are not necessarily shown to scale. In this specification, the notation "A to B" for two quantities A and B means "above A and below B" unless there is any particular contradiction.

[0171] (Light emitting device 10) Fig.90 This is a flowchart showing an example of a method for manufacturing the light-emitting device 10 according to the twelfth embodiment. Figure 91 to Figure 94 1 is a cross-sectional view showing an example of a method for manufacturing the light emitting device 10. Figure 90 to Figure 94 As shown, in step S20, a semiconductor crystal SL is epitaxially grown on a growth substrate SK (e.g., a C-plane sapphire substrate) using an MOCVD device or the like. The semiconductor crystal SL may be a nitride semiconductor crystal. As nitride semiconductors, in addition to GaN-based semiconductors, AlN (aluminum nitride) and InN (indium nitride) may also be listed.

[0172] Fig.90 Step S20 in the embodiment includes: step 20a, which sequentially forms a buffer layer BA, a base layer U1, a cathode contact layer C1, a first light-emitting layer E1, an intermediate layer G1, a p-type layer H1, a tunnel junction layer T1, and an anode contact layer F1; step 20b, which sequentially forms a base layer U2, a cathode contact layer C2, a second light-emitting layer E2, an intermediate layer G2, a p-type layer H2, a tunnel junction layer T2, and an anode contact layer F2; and step 20c, which sequentially forms a base layer U3, a cathode contact layer C3, a third light-emitting layer E3, an intermediate layer G3, a p-type layer H3, a tunnel junction layer T3, and an anode contact layer F3. Steps 20a to 20c can be performed sequentially in an MOCVD device, for example.

[0173] The buffer layer BA can be a gallium nitride crystal (e.g., 40 [nm] thick) formed at a low temperature (e.g., below 600°C). The base layers U1, U2, and U3 can be undoped gallium nitride crystals (e.g., 2 [μm] thick). The cathode contact layers C1, C2, and C3 can be n-type gallium nitride crystals (e.g., 2 [μm] thick). The first light-emitting layer E1, the second light-emitting layer E2, and the third light-emitting layer E3 can be active layers of an MQW (multiple quantum well) structure. For example, as the first light-emitting layer E1 that emits blue light with a wavelength of about 450 [nm], indium gallium nitride (a mixed crystal with an atomic ratio of In to Ga of 1:4) having a thickness of 50 [nm] and a composition ratio of In (indium) of 20% can be used. For example, as the second light-emitting layer E2 that emits green light with a wavelength of about 550 [nm], indium gallium nitride (mixed crystal) with a composition ratio of In of 25% can be used. For example, as the third light-emitting layer E3 emitting red light of about 630 [nm] in wavelength, indium gallium nitride (mixed crystal) with an In composition ratio of 30% can be used. The intermediate layers G1, G2, and G3 can be p-type aluminum gallium nitride crystals (e.g., thickness 20 [nm]). The p-type layers H1, H2, and H3 can be p-type gallium nitride crystals (e.g., thickness 120 [nm]). The tunnel junction layers T1, T2, and T3 can be undoped gallium nitride crystals (e.g., thickness 25 [nm]). The anode contact layers F1, F2, and F3 can be n-type gallium nitride crystals (e.g., thickness 400 [nm]).

[0174] exist Fig.90 In step S22, the semiconductor crystal SL is patterned by dry etching to expose the cathode contact layers C1, C2, and C3. As an etching mask for step S22, an inorganic film (silicon oxide film, nickel film, etc.) patterned by a resist or a stripping method can be used. Reactive ion etching (RIE) using halogens such as chlorine or fluorine can be applied to dry etching. The etching mask is removed by a shifter, an acidic solution, etc.

[0175] exist Fig.90In step S24, anodes A1, A2, A3 are formed on anode contact layers F1, F2, F3, and cathodes K1, K2, K3 are formed on cathode contact layers C1, C2, C3. Specifically, the electrode material (e.g., a laminated film of aluminum and titanium) deposited by evaporation is patterned using a resist as a mask by a lift-off method.

[0176] exist Fig.90 In step S26, the semiconductor crystal SL is patterned by dry etching to form a first semiconductor layer 11, a second semiconductor layer 12, and a third semiconductor layer 13. Here, the area other than the area where the elements are separated is protected by a resist, and the portion between the elements in the semiconductor crystal SL is completely removed by, for example, a halogen-based RIE method, in such a way that the growth substrate SK is exposed between the elements. The growth substrate SK itself may also be etched to form projections and depressions on the growth substrate SK. For electrical element separation, it is sufficient to stop etching just below the first light-emitting layer E1, the second light-emitting layer E2, and the third light-emitting layer E3, but for optical element separation, etching may also be performed in such a way that the surface of the growth substrate SK is exposed.

[0177] exist Fig.90 In step S28, a protective film PF is formed to cover the first side wall W1 included in the first semiconductor layer 11, the second side wall W2 and the fourth side wall W4 included in the second semiconductor layer 12, and the third side wall W3 included in the third semiconductor layer 13, thereby obtaining the first light-emitting element D1, the second light-emitting element D2, and the third light-emitting element D3. Here, after a mask covering the anodes A1, A2, A3 and the cathodes K1, K2, K3 is formed by photolithography or the like, silicon oxide covering the first side wall W1 to the fourth side wall W4 is formed by electron beam evaporation as the protective film PF. The protective film PF has the function of preventing short circuits between elements and preventing oxidation.

[0178] exist Fig.90 In step S30, the first light emitting element D1, the second light emitting element D2, and the third light emitting element D3 are mounted on the driving substrate DK via the conductive layer JC to obtain the light emitting device 10. The conductive layer JC can be made of solder or an anisotropic conductive adhesive material.

[0179] The light emitting device 10 is a structure in which holes of the anodes A1, A2, A3 are tunnel-injected into the p-type layers H1, H2, H3 via the cathode contact layers C1, C2, C3 and tunnel junction layers T1, T2, T3, which are n-type semiconductor layers. Thus, the anodes A1, A2, A3 and the cathodes K1, K2, K3 can be formed simultaneously using the same material, and the process can be simplified compared to the conventional method of forming the anode and cathode using different processes and different materials. In addition, it has the following advantages: the p-type (semiconductor) layer, which is easily increased in resistance by dry etching and mechanical polishing, can be not exposed, and the electrical characteristics of the light emitting element are stabilized. Figure 90 to Figure 94 In the embodiment, the first light emitting element D1 to the third light emitting element D3 are formed monolithically on the growth substrate SK, but the present invention is not limited thereto. The first light emitting element D1 to the third light emitting element D3 formed separately may be mounted on the driving substrate DK. In addition, after being mounted on the driving substrate DK, the growth substrate SK may be peeled off by a laser lift-off method or the like.

[0180] (Display device 50) Fig.95 It is a cross-sectional view showing an example of the configuration of a display device 50 involved in Embodiment 12. The display device 50 includes a light-emitting device involved in one embodiment of the present disclosure. In the example of Embodiment 12, the display device 50 includes a light-emitting device 10. The display device 50 has a plurality of pixels PX, and the pixel PX includes, for example, a first light-emitting element D1 to a third light-emitting element D3. Light from the pixel PX can be directly incident on a person's eyes or a sensor, etc., or can be incident via a projector 80. The wearable device 60 including the display device 50 can also overlap the image of the outside world 90 with the image of the display device 50.

[0181] [Implementation method 13] (Light emitting device 10V) Fig.96 The structure of a light emitting device 10V according to Embodiment 13 is briefly shown. The light emitting device 10V includes a plurality of light emitting elements DV. Fig.96 In the example of FIG. 1 , a first light emitting element DV1 and a second light emitting element DV2 are shown as two light emitting elements DV. Fig.96 The second light emitting element DV2 in the example is a light emitting element adjacent to the first light emitting element DV1.

[0182] exist Fig.96 In order to make the description clear, the case where the first light emitting element DV1 and the second light emitting element DV2 have the same structure is illustrated. Fig.96 The description regarding one light emitting element DV in the example is applicable to both the first light emitting element DV1 and the second light emitting element DV2.

[0183] However, as is also clear from the description of Embodiment 12, the second light-emitting element DV2 may have a different structure from that of the first light-emitting element DV1. Therefore, for example, the position of each part in the second light-emitting element DV2 may be different from the position of the corresponding part in the first light-emitting element DV1. As an example, in a case where the light color of the second light-emitting element DV2 is different from the light color of the first light-emitting element DV1, the position of the light-emitting layer EL in the second light-emitting element DV2 may be different from the position of the light-emitting layer EL in the first light-emitting element DV1 in the height direction of the light-emitting device 10V (also refer to the later described Fig.104 ).

[0184] The light emitting element DV includes an anode AN, a cathode CA, and a light emitting layer EL. In addition, unlike the embodiment 12, the light emitting element DV further includes a light absorber HK. Fig.96 In the example, it is assumed that the growth substrate SK has light-transmitting properties. Fig.96 In the example of Fig.96 The direction within the paper from the driving substrate DK side toward the growth substrate SK side ("light extraction direction").

[0185] In with Fig.96 In the relevant description, the light extraction direction is referred to as the upward direction. Fig.96 The direction from the growth substrate SK side toward the drive substrate DK side within the paper surface is called the downward direction. Fig.96 In the relevant description, it is assumed that the upper surface of the growth substrate SK is the light extraction surface. Fig.96 The same applies to the corresponding examples in the following figures.

[0186] In Embodiment 13, the plurality of light emitting elements DV are also separated by electrical elements. Therefore, the first light emitting element DV1 is electrically insulated from the second light emitting element DV2. Fig.96 In this example, the first light emitting element DV1 and the second light emitting element DV2 are adjacent to each other with a gap therebetween.

[0187] As described later, part of the light emitted from the light emitting layer EL becomes stray light. Therefore, in the light emitting device 10V, a light absorber HK is provided to reduce the stray light. The light absorber HK only needs to have relatively good light absorption characteristics in the frequency band of the light emitted from the light emitting layer EL.

[0188] The light emitting element DV may include at least one of the anode-side light absorber HKA and the cathode-side light absorber HKC as the light absorber HK. Fig.96 In the example of , the light emitting element DV has both the anode-side light absorber HKA and the cathode-side light absorber HKC.

[0189] When viewed from the light extraction side of the light emitting device 10V, the anode side light absorber HKA only needs to be located below the anode AN. The anode side light absorber HKA may be separated from the anode AN or may be in contact with the lower surface of the anode AN. Therefore, as an example, the anode side light absorber HKA may cover at least a portion of the lower surface of the anode AN.

[0190] Similarly, when viewed from the light extraction side of the light emitting device 10V, the cathode side light absorber HKC only needs to be located below the cathode CA. The cathode side light absorber HKC may be separated from the cathode CA or may be in contact with the lower surface of the cathode CA. Therefore, as an example, the cathode side light absorber HKC may cover at least a portion of the lower surface of the cathode CA.

[0191] As described above, at least one of the anode AN and the cathode C may be located above the light absorber HK. Therefore, at least one of the anode AN and the cathode C may be light-transmissive. Preferably, both the anode AN and the cathode CA are light-transmissive.

[0192] As an example, at least one of the anode AN and the cathode CA may include at least one of ITO, FTO, IGZO (registered trademark), ZnO, silicide, and SiC. Therefore, for example, at least one of the anode AN and the cathode CA may include a stacked structure of two or more of the above materials.

[0193] What kind of stray light is generated in the light emitting device 10V may depend on the refractive index of each part of the light emitting device 10V, for example. The inventor of the present application (hereinafter referred to as the "inventor") has studied the relationship between the refractive index nHK of the light absorber HK and the refractive index nSC of the semiconductor material constituting the light emitting element DV and stray light through optical simulation. In the following description, optical simulation is referred to as simulation.

[0194] As a result of the simulation, the inventors found that when nHK is close to nSC, stray light can be effectively reduced. Specifically, the inventors found that when the difference between nHK and nSC is within ±0.5, stray light can be effectively reduced. As described above, in the light-emitting element DV, |nHK-nSC|≦0.5 is preferred. As an example, nSC can be the refractive index of the material of the light-emitting layer EL (e.g., the material of MQW).

[0195] Generally, the larger the extinction coefficient of the light absorber HK is, the higher the light absorption performance of the light absorber HK is. As a result of simulation, the inventors found that even when the extinction coefficient of the light absorber HK is 5 or more, stray light can be effectively reduced.

[0196] In addition, the light absorption performance of the light absorber HK may also depend on the thickness of the light absorber HK. As a result of simulation, the inventors found that stray light can be effectively reduced when the thickness of the light absorber HK is 0.5 μm to 5 μm or less.

[0197] In the light-emitting element according to one embodiment of the present disclosure, when the light-emitting layer is caused to emit light, for example, current flows along a current path such as a drive circuit → anode → light-emitting layer → cathode → drive circuit. Fig.96 As shown, the light absorber HK may be interposed between the drive circuit DK and the anode N. In addition, the light absorber HK may also exist between the drive circuit DK and the cathode CA.

[0198] Therefore, the light absorber HK preferably has electrical conductivity. In this case, the possibility of a reduction in the current in the above-mentioned current path due to the light absorber HK can be reduced. Therefore, for example, the light absorber HK may contain a group IV semiconductor, a group III-V semiconductor other than nitrides, C, or a metal sulfide. Thus, as an example, the light absorber HK may also be graphite containing C as a main component. As another example, the light absorber HK may also be DLC (Diamond-like Carbon) including C and H.

[0199] Fig.97 Schematic cross-sectional view of the light emitting device 10V is shown. Fig.97 In the figure, reference numeral 810 indicates a long side of the light emitting element DV (also refer to the later described Fig.100 ) is a schematic cross-sectional view in a cross section parallel to the light emitting element DV, and reference numeral 820 is a schematic cross-sectional view in a cross section parallel to the short side of the light emitting element DV. Fig.97 In, with Fig.96 Unlike the example of FIG. 1 , a light emitting element DV is shown installed before the driving circuit DK. Fig.98 An example of an image showing a plurality of light emitting elements DV actually manufactured by the inventors is shown.

[0200] (Explanation on the cause of stray light) Next, refer to Fig.99 , an example of a cause of generation of stray light in a light-emitting device involved in one embodiment of the present invention is described. Fig.99 The emission angle θ of light in the example is an angle formed by the optical axis of the light emitted from the main surface of the light emitting layer EL and the normal to the main surface of the light emitting layer EL. Fig.99 In the example, the direction of the normal is set to be consistent with the light extraction direction.

[0201] Fig.99 The output light in the example is Lambertian. That is, Fig.99In the example, the outgoing light intensity is proportional to cosθ. When θ≒0°, the direction of the outgoing light is roughly consistent with the light extraction direction. Therefore, the outgoing light component of θ≒0° is the main luminous component and has almost no effect on stray light.

[0202] On the other hand, when θ is not 0°, the direction of the emitted light is not consistent with the light extraction direction. Fig.99 The direction parallel to the main surface of the light-emitting layer EL in the paper is called the lateral direction. When θ≒0° is not considered, the emitted light with the lateral component is considered to be the main cause of stray light. Specifically, the emitted light component with |θ|>5° is considered to be the main cause of stray light.

[0203] For example, when a metal electrode is present in the light-emitting element, the emitted light having a lateral component is reflected by the metal electrode. Moreover, the reflected light generated by the reflection based on the metal electrode can propagate laterally in the light-emitting device. Therefore, for example, the reflected light from the light-emitting element toward the atmosphere can be refracted at the interface between the light-emitting element and the atmosphere. Similarly, the reflected light from the atmosphere toward the light-emitting element can also be refracted at the same interface. In addition, the reflected light from the light-emitting element toward the mounting substrate can be refracted at the interface between the light-emitting element and the mounting substrate. In this way, the propagation direction of the reflected light can change with the refraction of the reflected light at various interfaces. The diversity of the propagation direction of this reflected light becomes the main reason for the generation of stray light.

[0204] In a light-emitting device, the difference between the refractive index of the light-emitting element and the refractive index of the atmosphere is considered to be relatively large. Therefore, it is considered that light reflection is significantly generated at the interface between the light-emitting element and the atmosphere. As a result, the stray light intensity may have a periodic distribution corresponding to the arrangement and spacing of the light-emitting elements. As described above, in a light-emitting device involved in one embodiment of the present disclosure, due to the emitted light having a lateral component, for example, a periodic spike-shaped stray light peak may be generated. The position of the spike-shaped stray light peak may correspond to the position of the side wall of the light-emitting element, for example.

[0205] (Study on stray light reduction) Stray light in a light-emitting device may cause a decrease in the display quality of a display device having the light-emitting device. Therefore, the inventors studied how the light absorber HK helps to reduce stray light through simulation. First, the inventors constructed a first model and a second model, respectively, as simulation models. The first model simulates a light-emitting device having a light-emitting element having a light absorber HK (for example, light-emitting device 10V). On the other hand, the second model simulates a light-emitting device having a light-emitting element without a light absorber HK (for example, light-emitting device 10).

[0206] like Fig.100As shown, the inventors set the short side direction of the light emitting element as the measurement direction of light intensity in each of the first model and the second model, and derived the distribution of light intensity in the measurement direction for each of the first model and the second model through simulation. Fig.101 An example of the distribution of light intensity of each of the first model and the second model derived by simulation is shown. Fig.101 In the graph of , the horizontal axis represents the position in the measurement direction, and the vertical axis represents the light intensity.

[0207] like Fig.101 As shown, it is confirmed by simulation that the provision of the light absorber HK can effectively reduce stray light. Specifically, it is confirmed that in the case of the light absorber HK, the maximum value of the stray light intensity can be reduced to about 1 / 10 compared with the case without the light absorber HK. In addition, it is also confirmed that the provision of the light absorber HK can reduce the periodic spike-shaped stray light peak.

[0208] Fig.102 Schematically showing the stray light generated in the first model, Fig.103 Schematically shows the stray light generated in the second model. Fig.102 Reference numeral 1310 and Fig.103 The figure mark 1410 of FIG. 1 illustrates a case where, among three light emitting elements, only the leftmost light emitting element on the paper plane emits light.

[0209] Fig.102 The reference numeral 1320 in FIG. 1 represents a schematic example of the distribution of light intensity in the first model. Fig.103 An exemplary example of the distribution of light intensity in the second model is shown in the reference numeral 1420 of FIG. In the first model, unlike the second model, most of the reflected light caused by the outgoing light having the lateral component can be absorbed by the light absorber HK. Therefore, in the first model, the stray light intensity can be reduced as a whole compared to the second model. In addition, in the first model, the periodic spike-shaped stray light peaks can also be reduced compared to the second model.

[0210] (Effect) As described above, according to the light emitting device 10V, stray light can be reduced by a configuration of a light emitting device different from that of the prior art. For example, according to the light emitting device 10V, stray light can be reduced without a reflector, unlike the light emitting device described in Patent Document 1. In this way, the light emitting device 10V is created based on a concept different from the prior art.

[0211] According to the research of the inventors, for example, the smaller the distance between the light-emitting elements, the more significant the influence of stray light in the light-emitting device involved in one embodiment of the present invention. Therefore, the light-emitting device 10V is suitable for a small display device 50. Therefore, as an example, the display device 50 may also include the light-emitting device 10V. Thus, a display device 50 with excellent display quality can be realized.

[0212] (Other structural examples of the light emitting device 10V) Fig.104 1 shows another structural example of the light-emitting device 10V. The light-emitting layer EL in Embodiment 13 may include a first light-emitting layer EL1 that emits light of a first color, a second light-emitting layer EL2 that emits light of a second color, and a third light-emitting layer EL3 that emits light of a third color. Therefore, the light-emitting device 10V may include: a first light-emitting element DV1 including a first light-emitting layer EL1, a second light-emitting element DV2 including a second light-emitting layer EL2, and a third light-emitting element DV3 including a third light-emitting layer EL3.

[0213] The light of the second color may have a color different from the light of the first color. For example, the light of the second color may be light having a longer wavelength than the light of the first color. In addition, the light of the third color may also have a color different from the light of the first color and the light of the second color. For example, the light of the second color may be light having a longer wavelength than the light of the first color and the light of the second color. Therefore, as an example, the light of the first color may be blue light, the light of the second color may be green light, and the light of the third color may be red light. The third light-emitting element DV3 may also be a light-emitting element adjacent to the second light-emitting element DV2. Therefore, as an example, the first light-emitting element DV1, the second light-emitting element DV2, and the third light-emitting element DV3 may be in Fig.100 The positions are arranged in this order in the measuring direction.

[0214] The second light emitting element DV2 may also have a first virtual light emitting layer DM1. The first virtual light emitting layer DM1 may be made of the same material as the first light emitting layer EL1. In the height direction of the light emitting device 10V, the first virtual light emitting layer DM1 may be present at the same position as the first light emitting layer EL1. The first virtual light emitting layer DM1 in the second light emitting element DV2 may be configured so as not to emit light when the second light emitting element DV2 is driven.

[0215] In summary, in the height direction of the light emitting device 10V, the second light emitting layer EL2 exists at a different position from that of the first light emitting layer EL1. Fig.104In the example, the second light-emitting layer EL2 is located at a lower position than the first light-emitting layer EL1. In this way, the distance from the light extraction surface of the light-emitting device 10V to the first light-emitting layer EL1 can be different from the distance from the light extraction surface to the second light-emitting layer EL2. Therefore, the distance from the light extraction surface of the light-emitting device 10V to the light absorber HK of the first light-emitting element DV1 can also be different from the distance from the light extraction surface to the light absorber HK of the second light-emitting element DV2.

[0216] The third light emitting element DV3 may also include a first virtual light emitting layer DM1 and a second virtual light emitting layer DM2. The second virtual light emitting layer DM2 may be made of the same material as the second light emitting layer EL2. In the height direction of the light emitting device 10V, the second virtual light emitting layer DM2 may also be present at the same position as the second light emitting layer EL2. The first virtual light emitting layer DM1 and the second virtual light emitting layer DM2 in the third light emitting element DV3 may be configured not to emit light when the third light emitting element DV3 is driven.

[0217] In summary, in the height direction of the light emitting device 10V, the third light emitting layer EL3 may exist at a position different from that of the first light emitting layer EL1 and the second light emitting layer EL2. Fig.104 In the example of , the third light-emitting layer EL3 is located below the second light-emitting layer EL2. In this way, the distance from the light extraction surface of the light-emitting device 10V to the second light-emitting layer EL2 can be different from the distance from the light extraction surface to the third light-emitting layer EL3. Therefore, the distance from the light extraction surface of the light-emitting device 10V to the light absorber HK of the second light-emitting element DV2 can also be different from the distance from the light extraction surface to the light absorber HK of the third light-emitting element DV3.

[0218] (Another Configuration Example of Light Emitting Device 10V) Alternatively, the light-emitting layer EL in Embodiment 13 may be only the first light-emitting layer EL1 that emits light of the first color. In this case, the height direction positions of the first light-emitting layers EL1 in each light-emitting element in the light-emitting device 10V may also be set to the same position (also refer to the above Fig.96 ).

[0219] In this way, the distance from the light extraction surface of the light emitting device 10V to the first light emitting layer EL1 of the first light emitting element DV1 can also be equal to the distance from the light extraction surface to the first light emitting layer EL1 of the second light emitting element DV2. Therefore, the distance from the light extraction surface of the light emitting device 10V to the light absorber HK of the first light emitting element DV1 can also be equal to the distance from the light extraction surface to the light absorber HK of the second light emitting element DV2.

[0220] In addition, in the case where the light-emitting layer EL in Embodiment 13 is only the first light-emitting layer EL1, the light-emitting device 10V may also have a wavelength conversion component that converts the light of the first color into light of another color. For example, the light-emitting device 10V may also have, as a wavelength conversion component, (i) a first wavelength conversion component that converts the light of the first color into light of the second color, and (ii) a second wavelength conversion component that converts the light of the first color into light of the third color. The first wavelength conversion component may be located on the light extraction side relative to the first light-emitting layer EL1 of the second light-emitting element DV2. In addition, the second wavelength conversion component may also be located on the light extraction side relative to the first light-emitting layer EL1 of the third light-emitting element DV3.

[0221] According to the above-mentioned configuration, the light of the first color emitted from the first light-emitting layer EL1 of the first light-emitting element DV1 is not converted by the wavelength conversion component, but is emitted to the outside of the light-emitting device 10V. On the other hand, the light of the first color emitted from the first light-emitting layer EL1 of the second light-emitting element DV2 is converted into the light of the second color by the first wavelength conversion component. Therefore, the converted light of the second color is emitted to the outside of the light-emitting device 10V. In addition, the light of the first color emitted from the first light-emitting layer EL1 of the third light-emitting element DV3 is converted into the light of the third color by the second wavelength conversion component. Therefore, the converted light of the third color is emitted to the outside of the light-emitting device 10V. As described above, even when only the first light-emitting layer EL1 that emits the light of the first color is used, the light-emitting device 10V that emits the light of the first color, the light of the second color, and the light of the third color can be realized.

[0222] 〔Summary 1〕 The light-emitting device involved in Mode 1 of the present disclosure has the following structure: it includes a first semiconductor layer including a first light-emitting layer and a second semiconductor layer including a second light-emitting layer, the first side wall of the first semiconductor layer and the second side wall of the second semiconductor layer are adjacent to each other with a gap therebetween, and the normal line of the first side wall is not parallel to the normal line of the second side wall.

[0223] A light-emitting device according to a second aspect of the present disclosure is the light-emitting device according to the first aspect, and may be configured such that a minimum distance between the first side wall and the second side wall is 30 [nm] to 2.0 [μm].

[0224] The light-emitting device according to aspect 3 of the present disclosure is the light-emitting device according to aspect 1 or 2, and may be configured such that the distance between the first side wall and the second side wall when the first semiconductor layer and the second semiconductor layer are viewed from above is not constant.

[0225] A light emitting device according to aspect 4 of the present disclosure is the light emitting device according to any one of aspects 1 to 3, and may be configured such that the refractive index of the gap is smaller than the refractive indexes of the first semiconductor layer and the second semiconductor layer.

[0226] A light-emitting device according to aspect 5 of the present disclosure is a light-emitting device according to any one of aspects 1 to 4, and may be configured such that the first light-emitting layer and the second light-emitting layer are at different distances from a light extraction surface.

[0227] A light emitting device according to a sixth aspect of the present disclosure is the light emitting device according to any one of aspects 1 to 5, and may be configured such that light is also emitted from the first side wall and the second side wall.

[0228] A light emitting device according to a seventh aspect of the present disclosure is the light emitting device according to any one of the first to sixth aspects, and may be configured such that the first side wall and the second side wall are planar shapes.

[0229] A light emitting device according to an eighth aspect of the present disclosure is the light emitting device according to any one of the first to seventh aspects, and may be configured such that the first side wall and the second side wall are curved.

[0230] A light emitting device according to a ninth aspect of the present disclosure is the light emitting device according to any one of the first to seventh aspects, and may be configured such that the first semiconductor layer and the second semiconductor layer are quadrilateral in a plan view.

[0231] A light emitting device according to a tenth aspect of the present disclosure is a light emitting device according to any one of aspects 1 to 6 and 8, and may be configured such that the first semiconductor layer and the second semiconductor layer are ellipses in a plan view.

[0232] The light-emitting device according to aspect 11 of the present disclosure is the light-emitting device according to aspect 10, and may be configured such that the major axis of the ellipse when the first semiconductor layer is viewed from above is not parallel to the major axis of the second semiconductor layer when viewed from above.

[0233] The light-emitting device according to aspect 12 of the present disclosure is the light-emitting device according to aspect 7, and may be configured as follows: the first semiconductor layer and the second semiconductor layer are concave polygons having five or more sides in a plan view.

[0234] A light emitting device according to aspect 13 of the present disclosure is a light emitting device according to any one of aspects 1 to 12, and may be configured such that a distance between the first side wall and the second side wall does not change depending on the position in the thickness direction.

[0235] A light emitting device according to aspect 14 of the present disclosure is the light emitting device according to any one of aspects 1 to 12, and may be configured such that a distance between the first side wall and the second side wall varies depending on a position in a thickness direction.

[0236] A light-emitting device according to a fifteenth aspect of the present disclosure is the light-emitting device according to the fourteenth aspect, and may be configured as follows: the first semiconductor layer and the second semiconductor layer are tapered.

[0237] A light-emitting device according to aspect 16 of the present disclosure is the light-emitting device according to aspect 15, and may be configured such that the first semiconductor layer and the second semiconductor layer are gradually tapered in a direction away from a light extraction surface.

[0238] A light emitting device according to aspect 17 of the present disclosure is a light emitting device according to any one of aspects 1 to 16, and may be configured such that an acute angle formed by a normal line of the first side wall and a normal line of the second side wall is less than or equal to 10°.

[0239] The light-emitting device involved in mode 18 of the present disclosure is a light-emitting device involved in any one of modes 1 to 17, and can be configured as follows: it includes a third light-emitting layer and a third semiconductor layer, wherein a third side wall of the third semiconductor layer and a fourth side wall of the second semiconductor layer on the opposite side of the second side wall are adjacent to each other with a gap therebetween, and the normal line of the third side wall and the normal line of the fourth side wall are not parallel.

[0240] The light-emitting device according to Mode 19 of the present disclosure is the light-emitting device according to any one of Modes 1 to 18, and may be configured to include a first light-emitting element including the first light-emitting layer and a second light-emitting element including the second light-emitting layer.

[0241] The light-emitting device involved in mode 20 of the present disclosure is the light-emitting device involved in mode 19, and can be configured as follows: including: a growth substrate, which is combined with the first semiconductor layer and the second semiconductor layer; and a driving substrate, on which the first light-emitting element and the second light-emitting element are installed.

[0242] A light-emitting device according to aspect 21 of the present disclosure is a light-emitting device according to any one of aspects 1 to 20, and may be configured such that light emitted from the first light-emitting layer and the second light-emitting layer has a Lambertian orientation.

[0243] A light-emitting device according to aspect 22 of the present disclosure is a light-emitting device according to any one of aspects 1 to 21, and may be configured as follows: the first semiconductor layer and the second semiconductor layer are nitride semiconductor crystals containing gallium, respectively.

[0244] The light-emitting device involved in mode 23 of the present disclosure is a light-emitting device of mode 20 and any one of modes 21 and 22 that cite mode 20, and can be constructed as follows: the first semiconductor layer is combined with the growth surface of the growth substrate, and the surface on the opposite side of the growth surface of the growth substrate is the light extraction surface.

[0245] The light-emitting device involved in mode 24 of the present disclosure is a light-emitting device of mode 19 and any one of modes 20 to 23 citing mode 19, and can be configured as follows: the first light-emitting element includes an anode and a cathode, and at least one of the anode and the cathode has light reflectivity.

[0246] A display device according to aspect 25 of the present disclosure may have a configuration including a light-emitting device according to any one of aspects 1 to 24.

[0247] The wearable device involved in mode 26 of the present disclosure may be configured as follows: including a light-emitting device involved in any one of modes 1 to 25.

[0248] The manufacturing method of the light-emitting device involved in Mode 27 of the present disclosure is the following method: it includes: a process of growing a semiconductor crystal on a growth substrate; and a process of forming a first semiconductor layer and a second semiconductor layer by patterning the semiconductor crystal, wherein the first semiconductor layer includes a first light-emitting layer and has a first side wall, and the second semiconductor layer includes a second light-emitting layer and has a second side wall, the first side wall and the second side wall are adjacent to each other with a gap therebetween, and the normal line of the first side wall and the normal line of the second side wall are not parallel.

[0249] The manufacturing method of the light-emitting device involved in mode 28 of the present disclosure is the manufacturing method of the light-emitting device involved in mode 27, and can be the following method: comprising: a process of forming a first light-emitting element including the first semiconductor layer and a second light-emitting element including the second semiconductor layer; and a process of mounting the first light-emitting element and the second light-emitting element on a driving substrate.

[0250] In the light-emitting device involved in the present disclosure, the normal line of the first side wall may intersect with the second side wall, and the normal line of the second side wall may intersect with the first side wall.

[0251] In the light emitting device of the present disclosure, the refractive index of the first semiconductor layer and the second semiconductor layer may be 2.0 times or more the refractive index of the gap.

[0252] In the light-emitting device involved in the present disclosure, the quadrilateral described in the above-mentioned embodiment 9 can be any one of a rectangle, a trapezoid and a rhombus.

[0253] In the light-emitting device according to the present disclosure, the second semiconductor layer may include a dummy light-emitting layer formed of the same material as that of the first light-emitting layer.

[0254] In the light-emitting device involved in the present disclosure, the first light-emitting layer can emit light in a first color, and the second light-emitting layer can emit light in a second color.

[0255] In the light-emitting device involved in the present disclosure, the first side wall and the second side wall can be covered by an insulating film respectively. In this case, the normal line of the insulating film covering the first side wall and the normal line of the insulating film covering the second side wall can be non-parallel.

[0256] In the light-emitting device involved in the present disclosure, the normal line of the third side wall may intersect with the fourth side wall, and the normal line of the fourth side wall may intersect with the third side wall.

[0257] In the light-emitting device of the present disclosure, the minimum distance between the third side wall and the fourth side wall may be 30 [nm] to 2.0 [μm].

[0258] In the light emitting device of the present disclosure, the distance between the third side wall and the fourth side wall when the third semiconductor layer and the second semiconductor layer are viewed from above may not be constant.

[0259] In the light-emitting device involved in the present disclosure, the third light-emitting layer can emit light in a third color.

[0260] In the light-emitting device according to the present disclosure, the first light-emitting element may include an anode and a cathode located between the first semiconductor layer and the driving substrate.

[0261] In the light-emitting device involved in the present disclosure, the first semiconductor layer may include an anode contact layer connected to the anode and a cathode contact layer connected to the cathode, and the anode contact layer and the cathode contact layer are n-type semiconductor layers respectively.

[0262] In the light-emitting device of the present disclosure, the first semiconductor layer may include a tunnel junction layer between the first light-emitting layer and the anode contact layer.

[0263] In the light-emitting device according to the present disclosure, the anode and the cathode may be made of the same material.

[0264] In the light-emitting device of the present disclosure, the first semiconductor layer may include a buffer layer in contact with the growth substrate.

[0265] In the light-emitting device involved in the present disclosure, the first color may be any one of red, green and blue.

[0266] 〔Summary 2〕 The display panel of method 1 of the present disclosure includes a plurality of light-emitting elements, wherein the light-emitting elements include: an island-shaped stack composed of a plurality of stacked semiconductor layers including a light-emitting layer, an anode and a cathode, and between the island-shaped stacks respectively provided with the plurality of light-emitting elements, a light absorber that absorbs light in the visible light region is provided, and the light absorber includes a material different from a material constituting the stack.

[0267] A display panel according to aspect 2 of the present disclosure is the display panel according to aspect 1, wherein an insulating film may be provided between the island-shaped stacked body and the light absorber.

[0268] A display panel according to aspect 3 of the present disclosure is the display panel according to aspect 1 or 2, wherein the transmittance of the light absorber in the visible light region may be 0.7 or less.

[0269] A display panel according to aspect 4 of the present disclosure is the display panel according to aspect 1 or 2, wherein the transmittance of the light absorber in the visible light region may be 0.3 or less.

[0270] A display panel according to aspect 5 of the present disclosure is the display panel according to any one of aspects 1 to 4, wherein the refractive index of the light absorber is greater than the refractive index of a material constituting the stacked body by 0.1 or more.

[0271] A display panel according to aspect 6 of the present disclosure is the display panel according to any one of aspects 1 to 4, wherein the refractive index of the light absorber is greater than the refractive index of a material constituting the stacked body by 1.5 or more.

[0272] A display panel according to aspect 7 of the present disclosure is the display panel according to any one of aspects 1 to 4, wherein the refractive index of the light absorber is smaller than the refractive index of a material constituting the stacked body by 0.1 or more.

[0273] A display panel according to an eighth aspect of the present disclosure is the display panel according to any one of aspects 1 to 4, wherein the refractive index of the light absorber is smaller than the refractive index of a material constituting the stacked body by 1.5 or more.

[0274] A display panel according to an aspect 9 of the present disclosure is the display panel according to any one of aspects 1 to 8, wherein the light absorber may be an organic compound or an inorganic compound.

[0275] In the display panel according to aspect 10 of the present disclosure, in addition to the display panel according to any one of aspects 1 to 8, the light absorber may include a pyridine skeleton.

[0276] The display panel of mode 11 of the present disclosure is based on the display panel of any one of modes 1 to 8, and the light absorber may include one or more selected from modified acrylic resin, epoxy resin, polyurethane resin, cyanoacrylate resin, vinyl fluoride resin, silicone resin, polyvinyl alcohol PVA and polyvinyl chloride PVC.

[0277] The display panel of mode 12 of the present disclosure is based on the display panel of any one of modes 1 to 8, and the light absorber may include one or more selected from azo dyes, quinone dyes, indigo dyes, polymethine dyes, styrene dyes, azo pigments, quinone pigments, indigo pigments, polymethine pigments and styrene pigments.

[0278] In the display panel of aspect 13 of the present disclosure, in addition to the display panel of any one of aspects 1 to 8, the light absorber may contain one or more selected from a carbon material, a metal sulfide, and a semiconductor material having absorption in the visible light region.

[0279] In a display panel according to aspect 14 of the present disclosure, in addition to the display panel according to aspect 2, the insulating film may be a film including any one of a silicon oxide film, a silicon nitride film, a silicon nitride oxide film, and an aluminum oxide film.

[0280] In the display panel of aspect 15 of the present disclosure, in addition to the display panel of aspect 2 or 14, the insulating film may be formed with a thickness of 3 nm to 100 nm in a direction perpendicular to the side wall of the island-shaped stacked body.

[0281] The display panel of mode 16 of the present disclosure can be based on the display panel of any one of modes 1 to 15, and the light absorber can be formed to be less than the height corresponding to the thickness from the surface of the display surface side of the semiconductor layer closest to the display surface to the surface of the display surface side of the light-emitting layer closest to the display surface, wherein the display surface is the surface from which light from the light-emitting layer is emitted.

[0282] The display panel of mode 17 of the present disclosure is based on the display panel of any one of modes 1 to 15, and the plurality of light-emitting elements may include: a first light-emitting element emitting a first color; a second light-emitting element emitting a second color different from the first color; and a third light-emitting element emitting a third color different from the first color and the second color, the first light-emitting element having a first stack as the island-shaped stack, the first stack including a first light-emitting layer emitting the first color, the second light-emitting element including the first stack and a second stack as the island-shaped stack, the second stack including a second light-emitting layer emitting the second color The third light emitting element comprises the first stack, the second stack and the third stack as the island-shaped stack, the third stack comprises a third light emitting layer emitting the third color, the third light emitting layer is arranged to be farther away from the display surface than the second stack, and the light absorber is formed to be below the height corresponding to the thickness from the surface of the display surface side of a semiconductor layer closest to the display surface among the multiple semiconductor layers to the surface of the display surface side of the third light emitting layer.

[0283] 〔Summary 3〕 The display panel involved in Mode 1 of the present disclosure includes a plurality of light-emitting elements, each of which has an island-shaped stack, an anode and a cathode, wherein the island-shaped stack is composed of a plurality of stacked semiconductor layers including a light-emitting layer, and a scatterer is arranged between the island-shaped stacks respectively possessed by the plurality of light-emitting elements, wherein the scatterer contains a material different from a material constituting the stack and scatters light in the visible light region.

[0284] The display panel according to aspect 2 of the present disclosure is the display panel according to aspect 1, and a recessed portion including the scatterer having a height lower than a maximum height portion of the stacked body may be provided between the island-shaped stacked bodies provided in each of the plurality of light-emitting elements.

[0285] The display panel involved in mode 3 of the present disclosure is the display panel of mode 2, and the height of the recessed portion may also be formed to be less than a height corresponding to the thickness from the surface on the display surface side of the semiconductor layer closest to the display surface to the surface on the display surface side of the light-emitting layer closest to the display surface, wherein the display surface is the surface from which light from the light-emitting layer is emitted.

[0286] The display panel involved in mode 4 of the present disclosure may be a display panel of mode 2, including a substrate having a display surface, wherein the display surface is a surface from which light from the light-emitting layer is emitted, and the bottom surface of the recess may also be a surface of the substrate on the opposite side to the display surface.

[0287] The display panel involved in method 5 of the present disclosure is the display panel involved in method 2, including a substrate having a display surface, wherein the display surface is a surface from which light from the light-emitting layer is emitted, and the bottom surface of the recessed portion may be a bottom surface formed on the surface of the substrate opposite to the display surface.

[0288] The display panel according to Embodiment 6 of the present disclosure may be the display panel according to any one of Embodiments 1 to 5, wherein an insulating film is provided between the island-shaped stacked body and the scatterer.

[0289] The display panel according to aspect 7 of the present disclosure may be the display panel according to aspect 6, and the insulating film may include any one of a silicon oxide film, a silicon nitride film, a silicon nitride oxide film, and an aluminum oxide film.

[0290] The display panel according to aspect 8 of the present disclosure is the display panel according to aspect 6, wherein the insulating film may be formed to a thickness of 3 nm to 100 nm in a direction perpendicular to the side walls of the island-shaped stacked body.

[0291] The display panel according to Embodiment 9 of the present disclosure may be the display panel according to any one of Modes 1 to 8, wherein the maximum length of the scatterer is not less than 5 nm and not more than 5 μm.

[0292] The display panel according to aspect 10 of the present disclosure may be the display panel according to any one of aspects 1 to 8, and the scatterer may be nanoparticles.

[0293] The display panel according to aspect 11 of the present disclosure is the display panel according to any one of aspects 1 to 10, and the scatterer may be a nanoparticle including a core and a shell.

[0294] A display panel according to aspect 12 of the present disclosure is the display panel according to any one of aspects 1 to 11, and the scatterer may be an inorganic compound or an organic compound.

[0295] The display panel according to aspect 13 of the present disclosure is the display panel according to any one of aspects 1 to 11, and the scatterer may be any one of an insulator, a semiconductor, a metal, and a metal oxide.

[0296] The display panel according to aspect 14 of the present disclosure is the display panel according to any one of aspects 1 to 11, wherein the scatterer may be a resin including one or more of an acryl group, an epoxy group, a urethane group, and a silicon group.

[0297] The display panel according to aspect 15 of the present disclosure is the display panel according to any one of aspects 1 to 14, and the refractive index of the scatterer may be different from the refractive index of at least one layer included in the stacked body.

[0298] The display panel according to aspect 16 of the present disclosure may be the display panel according to any one of aspects 1 to 15, and includes a light absorber that absorbs light in the visible light region around the scatterer.

[0299] A display panel according to a seventeenth aspect of the present disclosure is the display panel according to the sixteenth aspect, and the light absorber may be an organic compound or an inorganic compound.

[0300] The display panel according to aspect 18 of the present disclosure is the display panel according to aspect 16, and the light absorber may include a pyridine skeleton.

[0301] The display panel involved in method 19 of the present disclosure is the display panel involved in method 16, and the light absorber may also include one or more selected from modified acrylic resin, epoxy resin, polyurethane resin, cyanoacrylate resin, vinyl fluoride resin, silicone resin, polyvinyl alcohol (PVA) and polyvinyl chloride (PVC).

[0302] The display panel involved in method 20 of the present disclosure is the display panel involved in method 16, and the light absorber may also include one or more selected from azo dyes, quinone dyes, indigo dyes, polymethyl dyes, styrene dyes, azo pigments, quinone pigments, indigo pigments, polymethyl pigments and styrene pigments.

[0303] The display panel involved in mode 21 of the present disclosure is the display panel involved in mode 16, and the light absorber may include one or more selected from a carbon material, a metal sulfide, and a semiconductor material having absorption in the visible light region.

[0304] The display panel involved in mode 22 of the present disclosure may be a display panel of any one of modes 1, 2, 4 to 8, wherein the plurality of light-emitting elements include: a first light-emitting element that emits a first color; a second light-emitting element that emits a second color different from the first color; and a third light-emitting element that emits a third color different from the first color and the second color, wherein the first light-emitting element is provided as the island-shaped stack, and includes a first stack, and the first stack includes a first light-emitting layer that emits light of the first color; and the second light-emitting element is provided as the island-shaped stack, and includes the first stack and a second stack, and the second stack includes a layer that is arranged at a larger angle than the first stack from a surface on which light from the light-emitting layer is emitted, i.e., a display surface. The third light emitting element as the island-shaped stack comprises the first stack, the second stack and the third stack, the third stack comprises the third light emitting layer which is arranged farther from the display surface than the second stack and emits the third color of light; the concave portion of the scatterer having a height lower than the maximum height portion of the island-shaped stack possessed by the third light emitting element can also be formed as: below a height corresponding to the thickness from the surface on the display surface side of a semiconductor layer closest to the display surface among the multiple semiconductor layers to the surface on the display surface side of the third light emitting layer, the display surface being the surface from which light from the light emitting layer is emitted.

[0305] 〔Summary 4〕 The light-emitting device involved in Mode 1 of the present disclosure is a light-emitting device having a plurality of light-emitting elements, wherein the light-emitting elements have an anode, a cathode and a light absorber, two light-emitting elements adjacent to each other among the plurality of light-emitting elements are electrically insulated, and the light absorber includes at least one of the following: (i) an anode-side light absorber, which is located below the anode when viewed from the light extraction side of the light-emitting device; and (ii) a cathode-side light absorber, which is located below the cathode when viewed from the light extraction side.

[0306] In the light emitting device according to aspect 2 of the present disclosure, in aspect 1, at least one of the anode and the cathode may have light transmissivity.

[0307] In the light-emitting device according to mode 3 of the present disclosure, in mode 1 or 2, at least one of the anode and the cathode may contain at least one of ITO, FTO, IGZO, ZnO, silicide and SiC as a material.

[0308] In the light emitting device according to aspect 4 of the present disclosure, in any one of aspects 1 to 3, the difference between the refractive index of the light absorber and the refractive index of the semiconductor material constituting the light emitting element is within ±0.5.

[0309] In the light-emitting device according to aspect 5 of the present disclosure, in any one of aspects 1 to 4, the extinction coefficient of the light absorber may be 5 or more.

[0310] In the light emitting device according to aspect 6 of the present disclosure, in any one of aspects 1 to 5, the thickness of the light absorber may be 0.5 μm or more and 5 μm or less.

[0311] In the light emitting device according to aspect 7 of the present disclosure, in any one of aspects 1 to 6, the light absorber may have conductivity.

[0312] In the light emitting device according to aspect 8 of the present invention, in any one of aspects 1 to 7, the light absorber may include a Group IV semiconductor, a Group III-V semiconductor other than nitride, C, or a metal sulfide.

[0313] In the light emitting device according to aspect 9 of the present invention, in any one of aspects 1 to 8, the light absorber may be (i) graphite containing C as a main component, or (ii) DLC containing C and H.

[0314] In the light-emitting device involved in mode 10 of the present invention, in any one of modes 1 to 9, the plurality of light-emitting elements may respectively include a first light-emitting element and a second light-emitting element, the first light-emitting element may have a first light-emitting layer that emits light of a first color, the second light-emitting element may have a second light-emitting layer that emits light of a second color, the light of the second color has a color different from that of the light of the first color, and the distance from the light extraction surface of the light-emitting device to the first light-emitting layer may be different from the distance from the light extraction surface to the second light-emitting layer.

[0315] In the light-emitting device involved in mode 11 of the present disclosure, in mode 10, the distance from the light extraction surface to the light absorber of the first light-emitting element may be different from the distance from the light extraction surface to the light absorber of the second light-emitting element.

[0316] In the light-emitting device involved in mode 12 of the present disclosure, in any one of modes 1 to 9, the plurality of light-emitting elements may include a first light-emitting element and a second light-emitting element, the first light-emitting element and the second light-emitting element may respectively have a first light-emitting layer that emits light of a first color, and the distance from the light extraction surface of the light-emitting device to the first light-emitting layer of the first light-emitting element may also be equal to the distance from the light extraction surface to the first light-emitting layer of the second light-emitting element.

[0317] In the light-emitting device involved in mode 13 of the present disclosure, in mode 12, the distance from the light extraction surface to the light absorber of the first light-emitting element can be equal to the distance from the light extraction surface to the light absorber of the second light-emitting element.

[0318] A display device according to aspect 14 of the present disclosure may include the light-emitting device according to any one of aspects 1 to 11.

[0319] [Additional Notes] One mode of the present disclosure is not limited to the above-mentioned embodiments, and various changes can be made within the scope indicated by the claims. The embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of one mode of the present disclosure. In addition, new technical features can be formed by combining the technical means disclosed in each embodiment.

[0320] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of priority to Japanese Patent Applications No. 2023-099520, No. 2023-099521, No. 2023-099522, and No. 2023-099523 filed on June 16, 2023, the contents of which are incorporated herein by reference in their entirety. Description of Reference Numerals

[0321] 10 Lighting Device 11First semiconductor layer 12 Second semiconductor layer 13Third semiconductor layer 50 Display device 60 Wearable devices A1, A2, A3 anode BA buffer layer BS growth surface C1, C2, C3 cathode contact layer D1 first light emitting element D2 second light emitting element D3 third light emitting element DK drive substrate E1 first light-emitting layer E2 second light-emitting layer E3 third luminous layer F1, F2, F3 anode contact layer K1, K2, K3 cathode N1, N2 dummy light-emitting layer S1, S2 gap SK growth substrate SL semiconductor crystal T1, T2, T3 tunnel junction layers TS light extraction surface W1 first side wall W2 Second side wall W3 third side wall W4 fourth side wall.

Claims

1. A light emitting device, characterized in that: include: A first semiconductor layer including a first light emitting layer and a second semiconductor layer including a second light emitting layer, The first side wall of the first semiconductor layer and the second side wall of the second semiconductor layer are adjacent to each other with a gap therebetween. A normal line of the first side wall is not parallel to a normal line of the second side wall.

2. The light emitting device according to claim 1, characterized in that: The minimum distance between the first side wall and the second side wall is 30 [nm] to 2.0 [μm].

3. The light emitting device according to claim 1, characterized in that: The distance between the first side wall and the second side wall when the first semiconductor layer and the second semiconductor layer are viewed from above is not constant.

4. The light emitting device according to claim 1, characterized in that: The refractive index of the gap is smaller than the refractive indexes of the first semiconductor layer and the second semiconductor layer.

5. The light emitting device according to claim 1, characterized in that: The first light-emitting layer and the second light-emitting layer are at different distances from the light extraction surface.

6. The light emitting device according to claim 1, characterized in that: Light also exits from the first side wall and the second side wall.

7. The light emitting device according to claim 1, characterized in that: The first side wall and the second side wall are planar shapes.

8. The light emitting device according to claim 1, characterized in that: The first side wall and the second side wall are curved.

9. The light emitting device according to claim 7, characterized in that: The first semiconductor layer and the second semiconductor layer are quadrilaterals in a plan view.

10. The light emitting device according to claim 8, characterized in that: The first semiconductor layer and the second semiconductor layer are elliptical in a plan view.

11. The light emitting device according to claim 10, characterized in that: The major axis of the ellipse when the first semiconductor layer is viewed from above is not parallel to the major axis of the ellipse when the second semiconductor layer is viewed from above.

12. The light emitting device according to claim 7, characterized in that: The first semiconductor layer and the second semiconductor layer are concave polygons having five or more sides in a plan view.

13. The light emitting device according to claim 1, characterized in that: The distance between the first side wall and the second side wall does not change with the position in the thickness direction.

14. The light emitting device according to claim 1, characterized in that: A distance between the first side wall and the second side wall varies depending on a position in a thickness direction.

15. The light emitting device according to claim 14, characterized in that: The first semiconductor layer and the second semiconductor layer have a tapered shape.

16. The light emitting device according to claim 15, characterized in that: The first semiconductor layer and the second semiconductor layer are shaped to gradually become thinner in a direction away from the light extraction surface.

17. The light emitting device according to claim 1, characterized in that: An acute angle formed by a normal line of the first side wall and a normal line of the second side wall is less than or equal to 10°.

18. The light emitting device according to claim 1, characterized in that: include: comprising a third light emitting layer and a third semiconductor layer, The third side wall of the third semiconductor layer and the fourth side wall of the second semiconductor layer on the opposite side of the second side wall are adjacent to each other with a gap therebetween. A normal line of the third side wall and a normal line of the fourth side wall are not parallel.

19. The light emitting device according to claim 1, characterized in that: include: A first light-emitting element includes the first light-emitting layer and a second light-emitting element includes the second light-emitting layer.

20. The light emitting device according to claim 19, characterized in that: include: a growth substrate, which is combined with the first semiconductor layer and the second semiconductor layer; as well as A driving substrate on which the first light emitting element and the second light emitting element are mounted.

21. The light emitting device according to claim 1, characterized in that: Light emitted from the first light-emitting layer and the second light-emitting layer has a Lambertian orientation.

22. The light emitting device according to claim 1, characterized in that: The first semiconductor layer and the second semiconductor layer are each a nitride semiconductor crystal containing gallium.

23. The light emitting device according to claim 20, characterized in that: The first semiconductor layer is bonded to the growth surface of the growth substrate. The surface of the growth substrate opposite to the growth surface is a light extraction surface.

24. The light emitting device according to claim 1, characterized in that: The first light emitting element comprises an anode and a cathode, At least one of the anode and the cathode has light reflectivity.

25. A display device, characterized in that: The invention comprises the light emitting device as claimed in claim 1.

26. A wearable device, characterized in that: The invention comprises the light emitting device as claimed in claim 1.

27. A method for manufacturing a light emitting device, characterized in that: include: A step of growing a semiconductor crystal on a growth substrate; as well as The process of patterning the semiconductor crystal to form a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer includes a first light-emitting layer and has a first sidewall, and the second semiconductor layer includes a second light-emitting layer and has a second sidewall, The first side wall and the second side wall are adjacent to each other with a gap therebetween, and a normal line of the first side wall and a normal line of the second side wall are not parallel.

28. The method for manufacturing a light emitting device according to claim 27, wherein: include: forming a first light-emitting element including the first semiconductor layer and a second light-emitting element including the second semiconductor layer; as well as A step of mounting the first light emitting element and the second light emitting element on a driving substrate.

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