Photoelectric detection device and electronic equipment

Abstract

Provided is a photoelectric detection device capable of not only achieving absorption suppression of a light collecting portion, but also achieving negative bias pinning through a conductor film. The photodetection device includes a semiconductor layer, a pixel separation region, and an on-chip lens. In the semiconductor layer, a plurality of pixels capable of generating an electric signal from light incident from the outside are arranged in a matrix form. A pixel separation region is formed in the semiconductor layer and separates adjacent pixels from each other. The on-chip lens is disposed on the light incident surface side of the semiconductor layer, is formed for a pixel group each including two or more pixels, and converges light from the outside on the pixel group. The pixel separation region includes a condensing portion of light passing through the on-chip lens. The light collecting portion includes a first material extending in a thickness direction of the semiconductor layer, and a portion other than the light collecting portion includes a second material different from the first material extending in the thickness direction of the semiconductor layer.

Description

Technical Field

[0001] A technology according to an embodiment of the present disclosure (the present technology) relates to a photodetection device and an electronic device including the photodetection device. Background Art

[0002] Conventionally, for example, solid-state imaging elements such as charge coupled devices (CCDs) and complementary metal oxide semiconductor (CMOS) image sensors are used as photodetection devices in electronic devices having imaging functions such as digital cameras and digital video cameras. The photodetection device includes a pixel in which a photodiode (photoelectric conversion element) and a transistor that perform photoelectric conversion are combined, and an image is formed based on pixel signals output from a plurality of pixels arranged two-dimensionally.

[0003] In addition, in recent years, an image sensor having a structure in which one on-chip lens is formed on two or more pixels has been proposed. In this type of image sensor, a part of the plurality of pixels below the on-chip lens is used to detect the phase, thereby improving the autofocus (AF) speed. In addition, phase information is generated based on the pixel signal obtained by each pixel, and ranging is performed based on the phase information.

[0004] Note that, in the case where strong light is incident on a pixel, a phenomenon called color mixing may occur in which the charge accumulated in the photodiode of the pixel is saturated and overflows, and leaks to adjacent pixels. Therefore, a solid-state imaging device having a pixel separation area for separating pixels has been proposed (for example, Patent Document 1).

[0005] Citation list

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Laid-Open No. 2021-27276 Summary of the invention

[0008] Problems to be solved by the present invention

[0009] It is noted that in order to improve the quantum efficiency (Qe) of each pixel, a technology has been conventionally proposed in which a conductor film (e.g., a boron-containing polycrystalline silicon film or a boron-containing amorphous silicon film) is embedded in a pixel separation region via an insulating film, and a negative bias is applied to the conductor film in the pixel separation region to enhance pinning on the side walls of the pixel separation region.

[0010] However, in a structure in which one on-chip lens is formed on two or more pixels, incident light is condensed on a pixel separation region via the on-chip lens and absorbed by a light-condensing portion, so that quantum efficiency deteriorates.

[0011] The present disclosure has been made in view of such circumstances, and an object of the present disclosure is to provide a photodetection device and an electronic device capable of achieving both absorption suppression of a light-collecting portion and negative bias pinning by a conductor film.

[0012] Solutions to technical problems

[0013] One aspect of the present disclosure is a photoelectric detection device, which includes: a semiconductor layer, in which a plurality of pixels capable of generating electrical signals based on light incident from the outside are arranged in a matrix form; a pixel separation region, which is formed in the semiconductor layer and separates adjacent pixels from each other; and an on-chip lens, which is arranged on the side of the light incident surface of the semiconductor layer, is formed for each pixel group including more than two pixels, and focuses the light from the outside on the pixel group, wherein the pixel separation region includes a focusing portion for the light passing through the on-chip lens, and the focusing portion includes a first material extending along the thickness direction of the semiconductor layer, and a portion other than the focusing portion has a second material extending along the thickness direction of the semiconductor layer, and the second material is different from the first material.

[0014] Another aspect of the present disclosure is an electronic device including a photodetection device, the photodetection device including: a semiconductor layer, in which a plurality of pixels capable of generating electrical signals based on light incident from the outside are arranged in a matrix form; a pixel separation region formed in the semiconductor layer and separating adjacent pixels from each other; and an on-chip lens arranged on the light incident surface side of the semiconductor layer, formed for each pixel group including more than two pixels, and focusing the light from the outside on the pixel group, wherein the pixel separation region includes a focusing portion for the light passing through the on-chip lens, and the focusing portion includes a first material extending along the thickness direction of the semiconductor layer, and a portion other than the focusing portion has a second material extending along the thickness direction of the semiconductor layer, and the second material is different from the first material. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 : is a block diagram showing a schematic configuration example of a photodetection device according to a first embodiment of the present disclosure.

[0016] Figure 2 : is a partial longitudinal sectional view showing an example of the semiconductor structure of the photodetection device according to the first embodiment of the present disclosure.

[0017] Figure 3 : is a plan view showing a configuration example of a pixel layout according to a comparative example and an arrangement example of an on-chip lens with respect to the pixel layout.

[0018] Figure 4 is a partial longitudinal sectional view showing an example of a semiconductor structure of a photodetection device according to a comparative example.

[0019] Figure 5 : is a plan view showing an arrangement example of on-chip lenses with respect to a pixel layout according to the first embodiment of the present disclosure.

[0020] Fig. 6A It shows that along Figure 5 A partial longitudinal cross-sectional view of an example of a semiconductor structure of a photodetection device taken along line AA′.

[0021] Figure 6B It shows that along Figure 5 A partial longitudinal cross-sectional view of an example of the semiconductor structure of the photodetection device taken along line BB'.

[0022] Figure 7 : is a plan view showing a configuration example of a pixel layout of a photodetection device according to a second embodiment of the present disclosure and an arrangement example of an on-chip lens with respect to the pixel layout.

[0023] Fig. 8A : is a plan view showing an arrangement example of on-chip lenses with respect to a pixel layout of a photodetection device according to a third embodiment of the present disclosure.

[0024] Figure 8B : is a plan view showing an arrangement example of on-chip lenses with respect to a pixel layout of a photodetection device according to a first modification of the third embodiment of the present disclosure.

[0025] Figure 8C : is a plan view showing an arrangement example of on-chip lenses with respect to a pixel layout of a photodetection device according to a second modification of the third embodiment of the present disclosure.

[0026] Fig. 9 : is a plan view showing an arrangement example of on-chip lenses with respect to a pixel layout of a photodetection device according to a fourth embodiment of the present disclosure.

[0027] Fig. 10A : is a plan view showing a configuration example of a pixel layout of a photodetection device according to a fifth embodiment of the present disclosure.

[0028] Fig. 10B is a partial longitudinal sectional view showing an example of a semiconductor structure of a photodetection device according to a fifth embodiment of the present disclosure.

[0029] Fig.11A : is a cross-sectional view (Part 1) showing the process of a method for manufacturing a photodetection device according to a sixth embodiment of the present disclosure.

[0030] Fig. 11B 2 is a cross-sectional view showing a process of a method for manufacturing a photodetection device according to a sixth embodiment of the present disclosure (Part 2).

[0031] Fig. 11C : is a cross-sectional view (part 3) showing the process of the method for manufacturing the photodetection device according to the sixth embodiment of the present disclosure.

[0032] Fig.11D 4 is a cross-sectional view showing a process of a method for manufacturing a photodetection device according to a sixth embodiment of the present disclosure (Part 4).

[0033] Fig.11E : is a cross-sectional view showing the process of the method for manufacturing the photodetection device according to the sixth embodiment of the present disclosure (Part 5).

[0034] Fig.11F : is a cross-sectional view showing the process of the method for manufacturing the photodetection device according to the sixth embodiment of the present disclosure (Part 6).

[0035] Fig.11G : is a cross-sectional view showing the process of the method for manufacturing the photodetection device according to the sixth embodiment of the present disclosure (Part 7).

[0036] Fig.11H : is a cross-sectional view showing the process of the method for manufacturing the photodetection device according to the sixth embodiment of the present disclosure (Part 8).

[0037] Fig. 12A 2 is a cross-sectional view showing a process of a method for manufacturing a photodetection device in the case of performing p-type impurity doping according to a seventh embodiment of the present disclosure (Part 1).

[0038] Fig. 12B 2 is a cross-sectional view showing a process of a method for manufacturing a photodetection device in the case of performing p-type impurity doping according to the seventh embodiment of the present disclosure (Part 2).

[0039] Fig. 12C : is a cross-sectional view showing the process of the method for manufacturing the photodetection device in the case of performing p-type impurity doping according to the seventh embodiment of the present disclosure (Part 3).

[0040] Fig.12D 4 is a cross-sectional view showing a process of a method for manufacturing a photodetection device in the case of performing p-type impurity doping according to a seventh embodiment of the present disclosure (Part 4).

[0041] Fig.12E: is a cross-sectional view showing the process of the method for manufacturing the photodetection device in the case of performing p-type impurity doping according to the seventh embodiment of the present disclosure (Part 5).

[0042] Fig.12F : is a cross-sectional view showing the process of the method for manufacturing the photodetection device in the case of performing p-type impurity doping according to the seventh embodiment of the present disclosure (Part 6).

[0043] Fig.13A : is a cross-sectional view (Part 1) showing a process in the case of forming STI according to the eighth embodiment of the present disclosure.

[0044] Fig. 13B 2 is a cross-sectional view showing a process in the case of forming STI according to the eighth embodiment of the present disclosure (Part 2).

[0045] Fig. 13C : is a cross-sectional view (part 3) showing a process in the case of forming STI according to the eighth embodiment of the present disclosure.

[0046] Fig.13D 4 is a cross-sectional view showing a process in the case of forming STI according to the eighth embodiment of the present disclosure (Part 4).

[0047] Fig.13E is a cross-sectional view showing a process in the case of forming STI according to the eighth embodiment of the present disclosure (Part 5).

[0048] Fig.13F : is a cross-sectional view showing a process in the case of forming STI according to the eighth embodiment of the present disclosure (Part 6).

[0049] Fig.14A 2 is a cross-sectional view (Part 1) showing a manufacturing process in the case where alkali etching is not performed in a back surface process according to the ninth embodiment of the present disclosure.

[0050] Fig. 14B 2 is a cross-sectional view showing a manufacturing process in the case where alkali etching is not performed in the back surface process according to the ninth embodiment of the present disclosure (part 2).

[0051] Fig. 14C : is a cross-sectional view (part 3) showing the manufacturing process of the ninth embodiment of the present disclosure in the case where alkali etching is not performed in the back surface process.

[0052] Fig.14D 4 is a cross-sectional view showing a manufacturing process in the case where alkali etching is not performed in the back surface process according to the ninth embodiment of the present disclosure (part 4).

[0053] Fig.14E : is a cross-sectional view (part 5) showing a manufacturing process in the case where alkali etching is not performed in the back surface process according to the ninth embodiment of the present disclosure.

[0054] Fig.15 : is a block diagram showing a configuration example of an imaging device as an electronic device to which the present technology is applied.

[0055] Fig.16 : is a block diagram showing a schematic configuration example of a vehicle control system as an example of a moving body control system to which the technology according to the embodiment of the present disclosure can be applied.

[0056] Fig.17 It shows Fig.16 FIG. 1 is a diagram showing an example of the installation position of the imaging unit. DETAILED DESCRIPTION

[0057] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In the illustrations of the accompanying drawings referred to in the following description, the same or similar parts are represented by the same or similar figure marks, and redundant descriptions are omitted. However, it should be noted that the drawings are schematic, and the relationship between thickness and plane size and the thickness ratio of each device and each component are different from the actual ones. Therefore, the specific thickness and size should be determined in consideration of the following description. In addition, it is needless to say that there are parts with different dimensional relationships and proportions between the drawings.

[0058] In this specification, "first conductivity type" refers to one of p-type and n-type, and "second conductivity type" refers to one of p-type and n-type that is different from "first conductivity type". In addition, "n" or "p" to which "+" or "-" is added refers to a semiconductor region in which the impurity concentration is relatively higher or lower than the impurity concentration of a semiconductor region to which "+" or "-" is not added. However, even in semiconductor regions to which the same "n" and "n" are added, it does not mean that the impurity concentrations of the semiconductor regions are exactly the same.

[0059] In addition, the definitions of directions such as the upward and downward directions in the following description are only defined for the convenience of explanation and do not limit the technical ideas of the present disclosure. For example, it is needless to say that if the object is rotated 90° for observation, the upward and downward directions are converted to the left and right directions, and if the object is rotated 180° for observation, the upward and downward directions are reversed.

[0060] Note that the effects described in this specification are merely examples and are not restrictive, and there may be other effects.

[0061] <First embodiment>

[0062] (Overall structure of photoelectric detection device)

[0063] Figure 1 1 is a block diagram showing a schematic configuration example of a photodetection device according to a first embodiment of the present disclosure. The photodetection device 1 is a semiconductor device that uses a photoelectric conversion element such as a photodiode that forms each pixel to convert the amount of charge corresponding to the intensity of light formed as an image on the pixel into an electric signal and outputs the electric signal as image data, and is configured as, for example, a CMOS image sensor. For example, the photodetection device 1 can be integrally configured as a system on a chip (SoC) such as a CMOS LSI, but, for example, some of the components described below can be configured as separate LSIs.

[0064] As shown in the figure, for example, the photodetection device 1 includes components such as a pixel array section 11 , a vertical drive section 12 , a column processing section 13 , a horizontal drive section 14 , a system control section 15 , a signal processing section 16 , and a data storage section 17 .

[0065] The pixel array section 11 includes a group of photoelectric conversion elements such as photodiodes that form pixels 110 arranged in the horizontal direction (row direction) and the vertical direction (column direction). The pixel array section 11 converts the amount of charge corresponding to the intensity of the incident light formed as an image on each pixel 110 into an electric signal, and outputs the electric signal as a pixel signal. The pixel array section 11 may include, for example, effective pixels arranged in an area capable of receiving actual light and dummy pixels arranged outside the area and shielded by metal or the like. Note that an optical element (not shown) such as an on-chip microlens or a color filter that converges incident light is formed on each pixel 110 of the pixel array section 11.

[0066] The vertical drive section 12 includes a shift register, an address decoder, etc. The vertical drive section 12 supplies a drive signal and the like to each pixel 110 via a plurality of pixel drive lines 18 , thereby driving each pixel 110 of the pixel array section 11 , for example, simultaneously or row by row.

[0067] The column processing section 13 reads pixel signals from each pixel via the vertical signal line (VSL) 19 for each pixel column of the pixel array section 11 , and performs noise removal processing, correlated double sampling (CDS) processing, analog-to-digital (A / D) conversion processing, etc. The pixel signals processed by the column processing section 13 are output to the signal processing section 16 .

[0068] The horizontal driving section 14 includes a shift register, an address decoder, etc. The horizontal driving section 14 sequentially selects the pixels 110 corresponding to the pixel columns of the column processing section 13. Through the selective scanning of the horizontal driving section 14, the pixel signals of the pixels 110 in the column processing section 13 that have undergone signal processing are sequentially output to the signal processing section 16.

[0069] The system control section 15 includes a timing generator that generates various timing signals, etc. The system control section 15 performs drive control of the vertical drive section 12 , the column processing section 13 , and the horizontal drive section 14 based on, for example, timing signals generated by the timing generator not shown.

[0070] The signal processing section 16 performs signal processing such as arithmetic processing on the pixel signals supplied from the column processing section 13 while temporarily storing the data in the data storage section 17 as needed, and outputs an image signal based on each pixel signal. In addition, the signal processing section 16 performs signal processing according to the flag output from the column processing section 13.

[0071] Note that the photodetection device 1 to which the present technology is applied is not limited to the above-described configuration. For example, the photodetection device 1 may be configured in such a manner that the data storage section 17 is arranged at a subsequent stage of the column processing section 13, and the pixel signal output from the column processing section 13 is supplied to the signal processing section 16 via the data storage section 17. Alternatively, the photodetection device 1 may be configured in such a manner that the column processing section 13, the data storage section 17, and the signal processing section 16 connected in cascade process respective pixel signals in parallel.

[0072] Figure 2 1 is a partial longitudinal sectional view showing an example of a semiconductor structure of a photodetection device 1 according to a first embodiment of the present disclosure. As shown in the figure, a semiconductor structure 20 schematically includes, for example, a wiring layer 21, a semiconductor layer 22, a planarization film 23, a color filter 24, and an on-chip lens 25. For example, such a semiconductor structure 20 can be constructed by integrally bonding a first silicon substrate including a wiring layer 21 and various logic circuits (not shown) to a second silicon substrate including a semiconductor layer 22.

[0073] The on-chip lens 25 is an optical lens for efficiently converging light incident on the photodetection device 1 from the outside and forming an image on the corresponding plurality of pixels 110 of the semiconductor layer 22. In this example, one on-chip lens 25 is arranged for every four pixels 110 in which the pixels 110 are arranged in a two-by-two manner in the horizontal direction (column direction) and the vertical direction (row direction) in a plan view. Note that the on-chip lens 25 contains, for example, silicon oxide, silicon nitride, silicon oxynitride, organic SOG, polyimide resin, fluororesin, or the like.

[0074] The color filter 24 is a filter that selectively transmits light of a predetermined wavelength among the light focused by the on-chip lens 25. In this example, four color filters 24 that selectively transmit red light, green light, blue light, and near-infrared light wavelengths are used, but there is no limitation. A color filter 24 corresponding to an arbitrary color (wavelength) is arranged in each pixel 110.

[0075] The semiconductor layer 22 is a functional layer formed with a pixel circuit group, which includes a photoelectric conversion unit 221 such as a photodiode and various electronic components such as a transistor that form each pixel 110. Each photoelectric conversion unit 221 of the semiconductor layer 22 generates a charge amount corresponding to the intensity of light incident via the on-chip lens 25 and the color filter 24, converts the charge amount into an electrical signal, and outputs the electrical signal as a pixel signal. The photoelectric conversion unit 221 is an n-type region. It is noted that a portion of the light incident on the incident surface of the semiconductor layer 22 (for example, near-infrared light, etc.) can pass through the surface opposite to the incident surface (that is, the back surface) (that is, the front surface). The semiconductor layer 22 is manufactured on a silicon substrate by a semiconductor manufacturing process. The photoelectric conversion unit 221 and various electronic components are electrically connected to predetermined metal wiring in the wiring layer 21.

[0076] In addition, in the semiconductor layer 22, a pixel separation portion 27 that separates the pixels 110 from each other may be formed. The pixel separation portion 27 has a groove structure formed, for example, by an etching process. The pixel separation portion 27 prevents light incident on the pixel 110 from entering the adjacent pixel 110. A p-type region 222 is formed between the photoelectric conversion portion 221 and the pixel separation portion 27. Therefore, the silicon interface is pinned by the p-type region 222, so that the generation of dark current is suppressed.

[0077] The wiring layer 21 is a layer formed with a metal wiring pattern for transmitting power and various drive signals to each pixel 110 in the semiconductor layer 22 and transmitting pixel signals read from each pixel 110. The wiring layer 21 can generally include a stack of multilayer metal wiring patterns with an interlayer insulating film inserted therebetween. In addition, as required, the stacked metal wiring patterns are electrically connected by, for example, vias. For example, the wiring layer 21 includes metals such as aluminum (Al) and copper (Cu). In contrast, the interlayer insulating film includes, for example, silicon oxide.

[0078] A light shielding wall 28 is provided at both ends of the color filter 24 and the on-chip lens 25. The light shielding wall 28 is formed in a lattice shape in such a way that the photoelectric conversion unit 221 is opened. That is, the light shielding wall 28 is formed at a position corresponding to the pixel separation unit 27. The light shielding wall 28 is formed at a position overlapping the pixel separation unit 27 in a plan view. A light shielding material can be used as a material for forming the light shielding wall 28, and for example, tungsten (W), aluminum (Al) or copper (Cu) can be used. Alternatively, silicon oxide (SiO) and air (Air) as a low refractive material can be used.

[0079] The planarization film 23 is formed between the semiconductor layer 22 and the color filter 24, and planarizes the back surface of the semiconductor layer 22. In some cases, an antireflection portion having a concavo-convex shape is provided on the back surface of the semiconductor layer 22.

[0080] <Comparative Example of Implementation>

[0081] Figure 3 is a plan view showing a configuration example of a pixel layout according to a comparative example and an arrangement example of an on-chip lens 25 with respect to the pixel layout. Figure 3 , the pixel 110 indicated by the reference numeral G is a green pixel 110G covered with a G filter that transmits green light in the color filter 24. The pixel 110 indicated by the reference numeral R is a red pixel 110R covered with an R filter that transmits red light in the color filter 24. The pixel 110 indicated by the reference numeral B is a blue pixel 110B covered with a B filter that transmits blue light in the color filter 24.

[0082] like Figure 3 As shown, the photodetection device B1 includes, for example, a green pixel group 110GG, a red pixel group 110RG, and a blue pixel group 110BG. The green pixel group 110GG includes four pixels in which the green pixel 110G is arranged in a two-by-two manner in the horizontal direction and the vertical direction in a plan view. The red pixel group 110RG includes four pixels in which the red pixel 110R is arranged in a two-by-two manner in the horizontal direction and the vertical direction in a plan view. The blue pixel group 110BG includes four pixels in which the blue pixel 110B is arranged in a two-by-two manner in the horizontal direction and the vertical direction in a plan view.

[0083] The green pixel group 110GG, the red pixel group 110RG, and the blue pixel group 110BG form a unit layout. For example, a pair of green pixel groups 110GG are arranged on a diagonal line, and the red pixel group 110RG and the blue pixel group 110BG are arranged on a diagonal line to form a unit layout. The pixel layout of the photodetection device B1 has a configuration in which the unit layout is repeatedly arranged in the horizontal direction and the vertical direction in a plan view. Therefore, in the green pixel group 110GG, the red pixel group 110RG, and the blue pixel group 110BG, pixel groups of different colors are adjacent to each other in the horizontal direction and the vertical direction in a plan view.

[0084] like Figure 3 As shown, one on-chip lens 25 is arranged for every four pixels arranged in a two-by-two manner in the horizontal and vertical directions in a plan view. For example, one on-chip lens 25 is arranged in one green pixel group 110GG. One on-chip lens 25 is arranged in one red pixel group 110RG. One on-chip lens 25 is arranged in one blue pixel group 110BG.

[0085] like Figure 3As shown, in the configuration example of the pixel layout, pixels of the same color and pixels of different colors are separated by the pixel separation section 27 having a groove separation structure, respectively. For example, the pixel separation section 27 includes a same-color pixel separation section 271 for separating adjacent pixels 110 of the same color and a different-color pixel separation section 272 for separating adjacent pixels 110 of different colors. One green pixel 110G and another green pixel 110G adjacent to each other, one red pixel 110R and another red pixel 110R adjacent to each other, and one blue pixel 110B and another blue pixel 110B adjacent to each other are separated by the same-color pixel separation section 271, respectively. In addition, the green pixel 110G and the red pixel 110R adjacent to each other, and the green pixel 110G and the blue pixel 110B adjacent to each other are separated from each other by the different-color pixel separation section 272, respectively. Note that adjacent means adjacent in the horizontal direction or the vertical direction in a plan view.

[0086] Figure 4 is a partial longitudinal sectional view showing an example of a semiconductor structure of a photodetection device B1 according to a comparative example. Figure 4 In the above Figure 2 The same parts are denoted by the same reference numerals, and their detailed description is omitted.

[0087] In the photodetection device B1, when a boron-containing polysilicon film, a boron-containing amorphous silicon film, or the like is embedded in the pixel separation portion 27 to achieve negative bias pinning, incident light is absorbed by the light-collecting portion through the on-chip lens 25, and thus quantum efficiency (Qe) as a pixel characteristic deteriorates.

[0088] <Solution Method of First Implementation>

[0089] In order to solve the above problems, in the first embodiment of the present disclosure, as Figure 5 As shown, the pixel separation section 27 includes a light collecting section 273 for light passing through the on-chip lens 25 . Fig. 6A It shows that along Figure 5 FIG. 1 is a partial longitudinal cross-sectional view of an example of the semiconductor structure 20 of the photodetection device 1 taken along line AA′. Figure 6B It shows that along Figure 5 1 is a partial longitudinal cross-sectional view of an example of the semiconductor structure 20 of the photodetection device 1 taken along the line BB' of FIG. 1. The line AA' is an imaginary line passing through the different-color pixel separation portion 272, the green pixel 110G, and the same-color pixel separation portion 271 in a plan view. The line BB' is an imaginary line passing through the different-color pixel separation portion 272, the green pixel 110G, and the light-collecting portion 273 in a plan view.

[0090] like Figure 6BAs shown, at least one of silicon oxide, titanium oxide, air, and a transparent electrode is embedded in the light-collecting portion 273 in a manner extending in the thickness direction of the semiconductor layer 22. Fig. 6A As shown, a boron-containing amorphous silicon film having a high light absorption rate is embedded in the same-color pixel separation portion 271 and the different-color pixel separation portion 272 so as to extend in the thickness direction of the semiconductor layer 22 .

[0091] In addition, a fixed charge film 29 that generates negative fixed charges is formed on the inner wall surface of the focusing portion 273. As the fixed charge film 29, it is preferable to use a material such as silicon that can generate fixed charges by being deposited on a substrate to enhance pinning, and a high refractive index material film or a high dielectric film having negative charges can be used.

[0092] As a specific material of the fixed charge film 29 , for example, an oxide or a nitride containing at least any one element of hafnium (Hf), aluminum (Al), zirconium (Zr), tantalum (Ta), and titanium (Ti) can be used.

[0093] <Effects of the First Embodiment>

[0094] As described above, according to the first embodiment, in the pixel separation portion 27, by embedding a material having a high reflectivity in the focusing portion 273, and embedding a conductor for enhancing pinning (for example, a boron-containing amorphous silicon film) in the same-color pixel separation portion 271 and the different-color pixel separation portion 272, it is possible to achieve both absorption suppression of the focusing portion 273 and negative bias pinning of the boron-containing amorphous silicon film.

[0095] In addition, according to the first embodiment, by using at least one of silicon oxide, titanium oxide, air and a transparent electrode as the material to be embedded in the focusing portion 273, in the case of silicon oxide, the quantum efficiency (Qe) can be improved by high reflection; in the case of titanium oxide and air, color mixing can be suppressed because the scattering of light can be suppressed compared to silicon oxide; and in the case of a transparent electrode, a negative bias can be applied while suppressing light absorption.

[0096] Furthermore, according to the first embodiment, by forming the fixed charge film 29 that generates negative fixed charges on the inner wall surface of the light collecting portion 273 , dark current generated at the interface of the semiconductor layer 22 including the photoelectric conversion portion 221 can be suppressed by the fixed charge film 29 .

[0097] Note that, in the first embodiment, a p-type region may be formed on the side wall of the light concentrating portion 273. In this way, in the light concentrating portion 273, absorption may be suppressed, and pinning may be enhanced.

[0098] For example, in the case of applying a through-pixel separation structure to fine pixels of less than 0.7 μm, it is desirable to set the thickness of the silicon substrate to less than 3.7 μm in order to stably form the groove (i.e., the pixel separation portion 27), and it is desirable to set the thickness of the silicon substrate to greater than 2.8 μm in order to ensure the saturation charge amount; however, since the groove is stably formed when applying the present invention, the saturation charge amount can also be ensured while making the silicon substrate thicker.

[0099] <Second Implementation Method>

[0100] Figure 7 1 is a plan view showing a configuration example of a pixel layout of a photodetection device 1A according to a second embodiment of the present disclosure and an arrangement example of an on-chip lens 25 with respect to the pixel layout. Figure 7 In the above Figure 3 The same parts are denoted by the same reference numerals, and their detailed description is omitted.

[0101] In the second embodiment of the present disclosure, in the pixel separation section 27, there are provided an intersection portion 274-1 (274) between the same-color pixel separation section 271 extending in the horizontal direction (column direction) and the different-color pixel separation section 272 extending in the vertical direction (row direction), an intersection portion 274-2 (274) between the same-color pixel separation section 271 extending in the vertical direction and the different-color pixel separation section 272 extending in the horizontal direction, and an intersection portion 274-3 (274) between the different-color pixel separation section 272 extending in the horizontal direction and the different-color pixel separation section 272 extending in the vertical direction.

[0102] At least one of silicon oxide, titanium oxide, air, and a transparent electrode is embedded in the intersection portion 274 so as to extend in the thickness direction of the semiconductor layer 22 .

[0103] <Effects of the Second Embodiment>

[0104] As described above, according to the second embodiment, by embedding at least one of silicon oxide, titanium oxide, air, and a transparent electrode in the intersection portion 274 in addition to the light collecting portion 273 , light absorption suppression can be further improved.

[0105] Note that in the second embodiment, a fixed charge film that generates negative fixed charges may be formed on the inner wall surface of the intersection 274 , or a p-type region may be formed on the side wall of the intersection 274 .

[0106] <Third Implementation Method>

[0107] Fig. 8A is a plan view showing an arrangement example of the on-chip lens 25 with respect to the pixel layout of the photodetection device 1B according to the third embodiment of the present disclosure. Fig. 8A In the above Figure 3 The same parts are denoted by the same reference numerals, and their detailed description is omitted.

[0108] like Fig. 8A As shown, the photodetection device 1B includes, for example, a green pixel group 110GG. In the green pixel group 110GG, two green pixels 110G are arranged in a horizontal direction in a plan view.

[0109] The pixel separation section 31 includes a same-color pixel separation section 311 for separating adjacent pixels 110 of the same color and a different-color pixel separation section 312 for separating adjacent pixels 110 of different colors. The pixel separation section 31 also includes a light collecting section 313 for light passing through the on-chip lens 25.

[0110] At least one of silicon oxide, titanium oxide, air and a transparent electrode is embedded in the light focusing portion 313 so as to extend in the thickness direction of the semiconductor layer 22. A boron-containing amorphous silicon film having a high light absorption rate is embedded in the same-color pixel separation portion 311 and the different-color pixel separation portion 312 so as to extend in the thickness direction of the semiconductor layer 22.

[0111] <Effects of the Third Embodiment>

[0112] As described above, according to the third embodiment, effects similar to those of the above-described first embodiment can be obtained, and since two green pixels 110G are arranged in the horizontal direction (column direction), phase difference detection information in the horizontal direction can be obtained.

[0113] Note that in the third embodiment, a fixed charge film that generates negative fixed charges may be formed on the inner wall surface of the light collecting portion 313 , or a p-type region may be formed on the side wall of the light collecting portion 313 .

[0114] <First Modification of Third Embodiment>

[0115] Figure 8B is a plan view showing an arrangement example of an on-chip lens 25 with respect to a pixel layout of a photodetection device 1C according to a first modification of the third embodiment of the present disclosure. Figure 8B In the above Figure 3 The same parts are denoted by the same reference numerals, and their detailed description is omitted.

[0116] like Figure 8B As shown, the photodetection device 1C includes, for example, a green pixel group 110GG. The green pixel group 110GG includes nine pixels in which the green pixels 110G are arranged in a three-by-three manner in the horizontal direction and the vertical direction in a plan view.

[0117] like Figure 8BAs shown, one on-chip lens 25 is arranged for every nine pixels arranged three by three in the horizontal and vertical directions in a plan view. For example, one on-chip lens 25 is arranged in one green pixel group 110GG.

[0118] The pixel separation section 32 includes a same-color pixel separation section 321 for separating adjacent pixels 110 of the same color and a different-color pixel separation section 322 for separating adjacent pixels 110 of different colors. In addition, the pixel separation section 32 is further provided with an intersection 323 between the same-color pixel separation section 321 extending in the horizontal direction (column direction) and the same-color pixel separation section 321 extending in the vertical direction (row direction).

[0119] At least one of silicon oxide, titanium oxide, air and a transparent electrode is embedded in the intersection portion 323 in a manner extending in the thickness direction of the semiconductor layer 22. A boron-containing amorphous silicon film with a high light absorption rate is embedded in the same-color pixel separation portion 321 and the different-color pixel separation portion 322 in a manner extending in the thickness direction of the semiconductor layer 22.

[0120] <Effects of the First Modification of the Third Embodiment>

[0121] As described above, according to the first variant of the third embodiment, an effect similar to that of the above-mentioned first embodiment can be obtained, and since three green pixels 110G are arranged in the horizontal direction (column direction) and the vertical direction (row direction), respectively, phase difference detection information in both the horizontal direction and the vertical direction can be obtained.

[0122] Note that in the first modification of the third embodiment, a fixed charge film that generates negative fixed charges may be formed on the inner wall surface of the intersection 323 , or a p-type region may be formed on the side wall of the intersection 323 .

[0123] <Second Modification of Third Embodiment>

[0124] Figure 8C is a plan view showing an arrangement example of an on-chip lens 25 with respect to a pixel layout of a photodetection device 1D according to a second modification of the third embodiment of the present disclosure. Figure 8C In the above Figure 3 The same parts are denoted by the same reference numerals, and their detailed description is omitted.

[0125] like Figure 8C As shown, the photodetection device 1D includes, for example, a green pixel group 110GG. The green pixel group 110GG includes 16 pixels in which the green pixels 110G are arranged in a four-by-four manner in the horizontal direction and the vertical direction in a plan view.

[0126] like Figure 8CAs shown, one on-chip lens 25 is arranged for every 16 pixels arranged four by four in the horizontal and vertical directions in a plan view. For example, one on-chip lens 25 is arranged in one green pixel group 110GG.

[0127] The pixel separation section 33 includes a same-color pixel separation section 331 for separating adjacent pixels 110 of the same color and a different-color pixel separation section 332 for separating adjacent pixels 110 of different colors. In addition, the pixel separation section 33 is further provided with an intersection 333 between the same-color pixel separation section 331 extending in the horizontal direction (column direction) and the same-color pixel separation section 331 extending in the vertical direction (row direction).

[0128] At least one of silicon oxide, titanium oxide, air and a transparent electrode is embedded in the intersection portion 333 in a manner extending in the thickness direction of the semiconductor layer 22. A boron-containing amorphous silicon film with a high light absorption rate is embedded in the same-color pixel separation portion 331 and the different-color pixel separation portion 332 in a manner extending in the thickness direction of the semiconductor layer 22.

[0129] <Effects of the Second Modification of the Third Embodiment>

[0130] As described above, according to the second variant of the third embodiment, an effect similar to that of the above-mentioned first embodiment can be obtained, and since four green pixels 110G are arranged in the horizontal direction (column direction) and the vertical direction (row direction), respectively, phase difference detection information in both the horizontal direction and the vertical direction can be obtained.

[0131] Note that in the second modification of the third embodiment, a fixed charge film that generates negative fixed charges may be formed on the inner wall surface of the intersection 333 , or a p-type region may be formed on the side wall of the intersection 333 .

[0132] <Fourth Implementation Plan>

[0133] Fig. 9 is a plan view showing an arrangement example of an on-chip lens 25 with respect to a pixel layout of a photodetection device 1E according to a fourth embodiment of the present disclosure. Fig. 9 In the above Figure 5 The same parts are denoted by the same reference numerals, and their detailed description is omitted.

[0134] like Fig. 9 As shown, the photodetection device 1E includes, for example, a green pixel group 110GG. The green pixel group 110GG includes four pixels in which the green pixels 110G are arranged in a two-by-two manner in the horizontal direction and the vertical direction in a plan view.

[0135] The pixel separation section 41 includes a same-color pixel separation section 411 for separating adjacent pixels 110 of the same color and a different-color pixel separation section 412 for separating adjacent pixels 110 of different colors. The pixel separation section 41 also includes a light collecting section 413 for light passing through the on-chip lens 25.

[0136] The light focusing portion 413 has a rectangular shape that is symmetrical left and right and up and down, and at least one of silicon oxide, titanium oxide, air, and a transparent electrode is embedded therein in a manner extending in the thickness direction of the semiconductor layer 22. A boron-containing amorphous silicon film with a high light absorption rate is embedded in the same-color pixel separation portion 411 and the different-color pixel separation portion 412 in a manner extending in the thickness direction of the semiconductor layer 22.

[0137] <Effects of the Fourth Embodiment>

[0138] As described above, according to the fourth embodiment, an effect similar to that of the above-described first embodiment can be obtained, and a groove including the light-concentrating portion 413 can be stably formed, so that the silicon thickness can be further increased to ensure the saturation charge amount. Note that in the fourth embodiment, a fixed charge film that generates negative fixed charges can be formed on the inner wall surface of the light-concentrating portion 413, or a p-type region can be formed on the side wall of the light-concentrating portion 413. In addition, the shape of the intersection 274 in the second embodiment can be a rectangular shape.

[0139] <Fifth Implementation Plan>

[0140] Fig. 10A 1F is a plan view showing a configuration example of a pixel layout of a photodetection device 1F according to a fifth embodiment of the present disclosure. Fig. 10A In the above Figure 5 The same parts are denoted by the same reference numerals, and their detailed description is omitted. Fig. 10B is a partial longitudinal sectional view showing an example of the semiconductor structure of the photodetection device 1F.

[0141] like Fig. 10A As shown, the photodetection device 1F includes, for example, a green pixel group 110GG. The green pixel group 110GG includes four pixels in which the green pixels 110G are arranged in a two-by-two manner in the horizontal direction and the vertical direction in a plan view.

[0142] The pixel separation section 51 includes a same-color pixel separation section 511 for separating adjacent pixels 110 of the same color and a different-color pixel separation section 512 for separating adjacent pixels 110 of different colors. The pixel separation section 51 also includes a light collecting section 513 for light passing through the on-chip lens 25.

[0143] The light focusing portion 513 has a circular shape, and at least one of silicon oxide, titanium oxide, air, and a transparent electrode is embedded therein in a manner extending in the thickness direction of the semiconductor layer 22. A boron-containing amorphous silicon film having a high light absorption rate is embedded in the same-color pixel separation portion 411 and the different-color pixel separation portion 412 in a manner extending in the thickness direction of the semiconductor layer 22.

[0144] like Fig. 10B As shown, in the light collecting portion 513, a common pad portion 52 is arranged on the side facing the wiring layer 21. The common pad portion 52 serves as a conductor and serves as a contact pad when the pixel transistor is formed on a different substrate.

[0145] <Effects of the Fifth Embodiment>

[0146] As described above, according to the fifth embodiment, an effect similar to that of the first embodiment described above can be achieved. In addition, since the common pad portion 52 is arranged on the wiring layer 21 side of the focusing portion 513, the number of contact wirings to the pixel transistor can be reduced, so that the wiring design rules can be expected to be relaxed.

[0147] <Sixth Implementation Plan>

[0148] In the sixth embodiment of the present disclosure, a basic process of a method of manufacturing the photodetection device 1 will be described.

[0149] FIG. 11A to FIG. 11H 1 is a cross-sectional view showing the process of the method for manufacturing the photodetection device 1 according to the sixth embodiment. Note that, Fig.11A (1) to Fig.11E (1) is a plan view of the photodetection device 1 as viewed from the back side, and Fig.11A (2) to Fig.11E (2) is a partial longitudinal cross-sectional view showing an example of the semiconductor structure of the photodetection device 1 taken along lines C1-C1' and D1-D1'. Line C1-C1' is an imaginary line passing through the light-collecting portion 273 of the pixel separation portion 27 in a plan view. Line D1-D1' is an imaginary line passing through the same-color pixel separation portion 271 and the different-color pixel separation portion 272 in a plan view.

[0150] First, the silicon substrate 61 is prepared, and the light focusing portion 273 on the silicon substrate 61 is opened by dry etching to form the opening portion 62 ( Fig.11A After an insulating film 63 (silicon oxide, silicon nitride, etc.) is linearly embedded in the opening 62, polysilicon (Poly-Si) 64 is embedded and planarized by chemical mechanical polishing (CMP) and etching back. Fig. 11B ).

[0151] Next, the surface of the silicon substrate 61 is covered with a film 65 capable of obtaining a selectivity ratio between silicon such as silicon oxide and silicon nitride and dry etching, and then the silicon substrate 61 is opened in a pixel separation shape to form an opening portion 66 ( Fig. 11C Then, an insulating film 67 and a boron-containing amorphous silicon film 68 (hereinafter, referred to as an amorphous silicon film 68) are embedded in the opening 66 and planarized ( Fig.11D Thereafter, the polysilicon 64 and the amorphous silicon film 68 are etched back and the insulating film 69 is embedded ( Fig.11E ).

[0152] Then, after being bonded to the logic substrate through a manufacturing process of a wiring layer and the like using a conventional manufacturing method, the CIS substrate 71 of the photodetection device 1 is subjected to silicon thinning ( Fig.11F Then, when the polysilicon 64 and the amorphous silicon film 68 are alkali-etched in the back process, since the amorphous silicon film 68 has the characteristic of not being alkali-etched, wet etching is performed only in the polysilicon 64 of the light-collecting portion 273 ( Fig.11G ). Thereafter, the fixed charge film 29 and the like are embedded in the light-collecting portion 273 from which the polysilicon 64 is removed, thereby obtaining the semiconductor structure 20 ( Fig.11H ).

[0153] <Seventh Implementation Plan>

[0154] In the seventh embodiment of the present disclosure, a basic process of a method of manufacturing the photodetection device 1 in the case where p-type impurity doping is performed will be described.

[0155] FIG. 12A to FIG. 1 2H is a cross-sectional view showing the process of the method for manufacturing the photodetection device 1 in the case of performing p-type impurity doping according to the seventh embodiment. Note that, Fig. 12A (1) to Fig.12F (1) is a plan view of the photodetection device 1 as viewed from the back side, and Fig. 12A (2) to Fig.12F (2) is a partial longitudinal cross-sectional view showing an example of the semiconductor structure of the photodetection device 1 taken along lines C1-C1' and D1-D1'. FIG. 12A to FIG. 1 In 2H, FIG. 11A to FIG. 11E The same parts are denoted by the same reference numerals, and their detailed description is omitted.

[0156] First, the silicon substrate 61 is prepared, and the light focusing portion 273 on the silicon substrate 61 is opened by dry etching to form the opening portion 62 ( Fig. 12A The opening 62 is subjected to solid phase diffusion or plasma doping (PLAD) to form a p-type region 72 ( Fig. 12BThen, after the insulating film 63 (silicon oxide, silicon nitride, etc.) is linearly embedded in the opening 62 where the p-type region 72 is formed, the polysilicon 64 is embedded, and planarization is performed by CMP and etching back, etc. ( Fig. 12C ).

[0157] Next, the surface of the silicon substrate 61 is covered with a film 65 capable of obtaining a selectivity ratio between silicon such as silicon oxide and silicon nitride and dry etching, and then the silicon substrate 61 is opened in a pixel separation shape to form an opening portion 66 ( Fig.12D Then, the opening 66 is subjected to solid phase diffusion or plasma doping (PLAD) to form a p-type region 72 ( Fig.12E Then, the insulating film 67 and the amorphous silicon film 68 are embedded in the opening 66 where the p-type region 72 is formed and planarized ( Fig.12F ). Thereafter, execute the same FIG. 11E to FIG. 11G Similar manufacturing process.

[0158] <Eighth Implementation Plan>

[0159] In the eighth embodiment of the present disclosure, a process in the case of forming a shallow trench (STI) will be described.

[0160] FIG. 13A to FIG. 13F is a cross-sectional view showing the process of forming STI according to the eighth embodiment. Note that, Fig.13A (1) to Fig.13F (1) is a plan view of the photodetection device 1 as viewed from the back side, and Fig.13A (2) to Fig.13F (2) is a partial longitudinal cross-sectional view showing an example of the semiconductor structure of the photodetection device 1 taken along lines C1-C1' and D1-D1'. FIG. 13A to FIG. 13F In the above FIG. 11A to FIG. 11E The same parts are denoted by the same reference numerals, and their detailed description is omitted.

[0161] First, the silicon substrate 61 is prepared, and the same-color pixel separation portion 271 and the different-color pixel separation portion 272 on the silicon substrate 61 are excavated by dry etching to form the excavated portion 81, and the focusing portion 273 is excavated by dry etching to form the excavated portion 82 ( Fig.13A Then, after the coating film 83 (silicon oxide, silicon nitride, etc.) is embedded in the excavated portion 81, the excavated portion 82 is opened to form an opening portion 84 ( Fig. 13B ).

[0162] Next, after the insulating film 63 (silicon oxide, silicon nitride, etc.) is embedded linearly in the opening 84, polysilicon (Poly-Si) 64 is embedded and planarized by CMP and etch-back, etc. ( Fig. 13C).

[0163] Next, the surface of the silicon substrate 61 is covered with a film 65 capable of obtaining a selectivity ratio between silicon such as silicon oxide and silicon nitride and dry etching, and then the silicon substrate 61 is opened in a pixel separation shape to form an opening portion 66 ( Fig.13D Then, the insulating film 67 and the amorphous silicon film 68 are embedded in the opening 66 and planarized ( Fig.13E Thereafter, the polysilicon 64 and the amorphous silicon film 68 are etched back and the insulating film 69 is embedded ( Fig.13F ). Thereafter, execute the same FIG. 11E to FIG. 11G Similar manufacturing process.

[0164] <Ninth Implementation Plan>

[0165] In a ninth embodiment of the present disclosure, a manufacturing process in the case where alkali etching is not performed in a back surface process will be described.

[0166] FIG. 14A to FIG. 14E 1 is a cross-sectional view showing the manufacturing process of the ninth embodiment without performing alkali etching in the back surface process. Note that, Fig.14A (1) to Fig.14E (1) is a plan view of the photodetection device 1 as viewed from the back side, and Fig.14A (2) to Fig.14E (2) is a partial longitudinal cross-sectional view showing an example of the semiconductor structure of the photodetection device 1 taken along lines C1-C1' and D1-D1'. FIG. 14A to FIG. 14E In the above FIG. 11A to FIG. 11E The same parts are denoted by the same reference numerals, and their detailed description is omitted.

[0167] First, the silicon substrate 61 is prepared, and the light focusing portion 273 on the silicon substrate 61 is opened by dry etching to form the opening portion 62 ( Fig.14A Next, an insulating film 63 (silicon oxide, silicon nitride, etc.) is embedded in the opening 62, and planarization is performed by CMP and etching back. Fig. 14B ).

[0168] Next, the silicon substrate 61 is opened in a pixel separation shape to form an opening 66 ( Fig. 14C Then, the insulating film 67 and the amorphous silicon film 68 are embedded in the opening 66 and planarized ( Fig.14D Thereafter, the polysilicon 64 and the amorphous silicon film 68 are etched back and the insulating film 69 is embedded ( Fig.14E ). Thereafter, execute the same FIG. 11E to FIG. 11G Similar manufacturing process.

[0169] Therefore, only the light-condensing portion 273 is filled with non-silicon, thereby reducing the concern of warpage.

[0170] <Other Implementation Options>

[0171] As described above, the present technology has been described by the first to ninth embodiments and the first and second variations of the third embodiment, but it should not be understood that the description and drawings forming part of the present disclosure limit the present technology. When understanding the gist of the technical content disclosed in the above-mentioned first to ninth embodiments, it is obvious to those skilled in the art that the present technology may include various alternative embodiments, examples and operating techniques. In addition, the configurations disclosed in the first to ninth embodiments and the first and second variations of the third embodiment can be appropriately combined within the scope of no contradiction. For example, the configurations disclosed in multiple different embodiments can be combined, or the configurations disclosed in multiple different variations of the same embodiment can be combined.

[0172] <Application examples of electronic equipment>

[0173] The above-mentioned photoelectric detection device can be applied to various electronic devices, for example, imaging devices such as digital cameras and digital video cameras, mobile phones with imaging functions, or other devices with imaging functions.

[0174] Fig.15 : is a block diagram showing a configuration example of an imaging device as an electronic device to which the present technology is applied.

[0175] Fig.15 The illustrated imaging device 2201 includes an optical system 2202, a shutter device 2203, a solid-state imaging element 2204 as a photodetection device, a control circuit 2205, a signal processing circuit 2206, a monitor 2207, and two memories 2208, and can capture still images and moving images.

[0176] The optical system 2202 includes one or more lenses, and guides light (incident light) from a subject to the solid-state imaging element 2204 to form an image on a light receiving surface of the solid-state imaging element 2204 .

[0177] The shutter device 2203 disposed between the optical system 2202 and the solid-state imaging element 2204 controls a light irradiation period and a light shielding period to the solid-state imaging element 2204 according to control of the control circuit 2205 .

[0178] The solid-state imaging element 2204 includes a package having the above-mentioned solid-state imaging element. The solid-state imaging element 2204 accumulates signal charges for a certain period of time according to the light forming an image on the light receiving surface via the optical system 2202 and the shutter device 2203. The signal charges accumulated in the solid-state imaging element 2204 are transmitted according to the drive signal (timing signal) supplied from the control circuit 2205.

[0179] The control circuit 2205 outputs a drive signal to control the transfer operation of the solid-state imaging element 2204 and the shutter operation of the shutter device 2203 , thereby driving the solid-state imaging element 2204 and the shutter device 2203 .

[0180] The signal processing circuit 2206 performs various types of signal processing on the signal charge output from the solid-state imaging element 2204. An image (image data) obtained by the signal processing circuit 2206 performing signal processing is supplied to the monitor 2207 for display or supplied to the memory 2208 for storage (recording).

[0181] Also in the imaging device 2201 configured as described above, the photodetection devices 1 , 1A, 1B, 1C, 1D, 1E, and 1F may be applied instead of the above-described solid-state imaging element 2204 .

[0182] (Application example of mobile object)

[0183] The technology according to the embodiments of the present disclosure (the present technology) can be applied to various products. For example, the technology according to the embodiments of the present disclosure can be implemented as a device installed on any type of mobile body such as an automobile, an electric car, a hybrid car, a motorcycle, a bicycle, a personal mobile device, an airplane, a drone, a ship, or a robot.

[0184] Fig.16 : is a block diagram showing a schematic configuration example of a vehicle control system as an example of a moving body control system to which the technology according to the embodiment of the present disclosure can be applied.

[0185] The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. Fig.16 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside information detection unit 12030, an inside information detection unit 12040, and an integrated control unit 12050. In addition, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, a sound / image output section 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0186] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various types of programs. For example, the drive system control unit 12010 serves as a control device for the following devices: a drive force generating device such as an internal combustion engine or a drive motor for generating a vehicle drive force, a drive force transmitting mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a vehicle braking force.

[0187] The body system control unit 12020 controls the operation of various types of devices provided on the vehicle body according to various types of programs. For example, the body system control unit 12020 is used as a control device for a keyless entry system, a smart key system, a power window device, or various lights such as a headlight, a reverse light, a brake light, a turn signal light, or a fog light. In this case, a radio wave transmitted from a mobile device that replaces the key or a signal of various types of switches may be input to the body system control unit 12020. The body system control unit 12020 receives input of these radio waves or signals, and controls a door lock device, a power window device, or a light, etc. of the vehicle.

[0188] The vehicle exterior information detection unit 12030 detects information outside the vehicle including the vehicle control system 12000. For example, the vehicle exterior information detection unit 12030 is connected to the camera unit 12031. The vehicle exterior information detection unit 12030 causes the camera unit 12031 to capture an image of the vehicle exterior and receives the captured image. Based on the received image, the vehicle exterior information detection unit 12030 may perform detection processing of objects such as people, vehicles, obstacles, signs, or characters on the road surface, or may perform detection processing of the distance to the above-mentioned objects.

[0189] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 may output the electrical signal as an image, or may output the electrical signal as distance measurement information. In addition, the light received by the imaging unit 12031 may be visible light, or may be invisible light such as infrared rays.

[0190] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver state detection unit 12041 that detects the driver's state. The driver state detection unit 12041 includes, for example, a camera that takes a picture of the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or the driver's concentration level, or can determine whether the driver is dozing off.

[0191] The microcomputer 12051 can calculate the control target value of the driving force generating device, the steering mechanism or the braking device based on the information outside or inside the vehicle obtained by the vehicle outside information detection unit 12030 or the vehicle inside information detection unit 12040, and output the control command to the driving system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of the advanced driver assistance system (ADAS), including collision avoidance or impact mitigation of the vehicle, following driving based on the vehicle-to-vehicle distance, speed maintenance driving, vehicle collision warning or vehicle lane departure warning, etc.

[0192] In addition, by controlling the driving force generating device, steering mechanism or braking device, etc. based on the information outside or inside the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, the microcomputer 12051 can perform collaborative control aimed at achieving automatic driving, etc., wherein the automatic driving enables the vehicle to drive autonomously without relying on the driver's operation.

[0193] Furthermore, based on the information outside the vehicle obtained by the vehicle exterior information detection unit 12030, the microcomputer 12051 may output a control command to the body system control unit 12020. For example, the microcomputer 12051 may perform cooperative control aimed at preventing glare by controlling the headlights to change from high beam to low beam, for example, according to the position of a preceding vehicle or an oncoming vehicle detected by the vehicle exterior information detection unit 12030.

[0194] The sound / image output unit 12052 sends an output signal of at least one of sound and image to an output device capable of visually or auditorily notifying the vehicle's passengers or the outside of the vehicle of information. Fig.16 In the example of , as the output device, an audio speaker 12061, a display portion 12062, and an instrument panel 12063 are shown. For example, the display portion 12062 may include at least one of an in-vehicle display and a head-up display.

[0195] Fig.17 12031 is a diagram showing an example of the installation position of the camera unit 12031.

[0196] exist Fig.17 In the figure, the vehicle 12100 includes camera units 12101, 12102, 12103, 12104 and 12105 as the camera unit 12031.

[0197] The camera units 12101, 12102, 12103, 12104 and 12105 are arranged, for example, at the front nose, rearview mirror, rear bumper and rear door of the vehicle 12100 and at the upper part of the windshield in the vehicle compartment. The camera unit 12101 arranged at the front nose and the camera unit 12105 arranged at the upper part of the windshield in the vehicle compartment mainly obtain images in front of the vehicle 12100. The camera units 12102 and 12103 arranged at the rearview mirror mainly obtain images on both sides of the vehicle 12100. The camera unit 12104 arranged at the rear bumper or rear door mainly obtains images behind the vehicle 12100. The images in front of the vehicle obtained by the camera units 12101 and 12105 are mainly used to detect the vehicle in front, pedestrians, obstacles, traffic lights, traffic signs or lanes, etc.

[0198] Note that, Fig.17 An example of the imaging range of the imaging units 12101 to 12104 is shown. The imaging range 12111 indicates the imaging range of the imaging unit 12101 provided at the front nose. The imaging ranges 12112 and 12113 respectively indicate the imaging ranges of the imaging units 12102 and 12103 provided at the rearview mirror. The imaging range 12114 indicates the imaging range of the imaging unit 12104 provided at the rear bumper or the rear door. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 viewed from above is obtained.

[0199] At least one of the imaging units 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

[0200] For example, based on the distance information obtained from the camera units 12101 to 12104, the microcomputer 12051 can determine the distance to each three-dimensional object within the camera ranges 12111 to 12114 and the time change of the distance (relative speed with respect to the vehicle 12100), thereby extracting the nearest three-dimensional object as the front vehicle, in particular, the three-dimensional object exists on the driving path of the vehicle 12100 and travels in the same direction as the vehicle 12100 at a predetermined speed (e.g., equal to or greater than 0 km / h). In addition, the microcomputer 12051 can pre-set the inter-vehicle distance to be maintained with the front vehicle, and perform automatic braking control (including follow-up stop control) or automatic acceleration control (including follow-up start control), etc. Therefore, cooperative control such as automatic driving, which aims to make the vehicle travel autonomously without relying on the operation of the driver, can be performed.

[0201] For example, based on the distance information obtained from the camera units 12101 to 12104, the microcomputer 12051 can classify the three-dimensional object data of the three-dimensional object into three-dimensional object data of two-wheeled vehicles, standard vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, extract the classified three-dimensional object data, and use the extracted three-dimensional object data to automatically avoid obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that the driver of the vehicle 12100 can visually identify and obstacles that the driver of the vehicle 12100 is difficult to visually identify. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle. When the collision risk is equal to or higher than the set value and therefore there is a possibility of collision, the microcomputer 12051 outputs a warning to the driver via the audio speaker 12061 or the display unit 12062, and performs forced deceleration or evasive steering via the drive system control unit 12010. Therefore, the microcomputer 12051 can assist driving to avoid collisions.

[0202] At least one of the camera units 12101 to 12104 may be an infrared camera that detects infrared rays. The microcomputer 12051 may identify a pedestrian, for example, by determining whether a pedestrian exists in the camera images of the camera units 12101 to 12104. For example, such identification of pedestrians is performed by the following steps: a step of extracting feature points in the camera images of the camera units 12101 to 12104 as infrared cameras; and a step of performing pattern matching processing on a series of feature points representing the contour of an object to determine whether it is a pedestrian. If the microcomputer 12051 determines that a pedestrian exists in the camera images of the camera units 12101 to 12104 and thus identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 so that a square contour line for emphasis is displayed in a manner superimposed on the identified pedestrian. The sound / image output unit 12052 may also control the display unit 12062 so that an icon representing a pedestrian or the like is displayed at a desired position.

[0203] Note that the present disclosure may also have the following configurations. (1)

[0205] A photoelectric detection device, comprising:

[0206] a semiconductor layer in which a plurality of pixels capable of generating an electrical signal according to light incident from the outside are arranged in a matrix form;

[0207] a pixel separation region which is formed in the semiconductor layer and separates adjacent pixels from each other; and

[0208] an on-chip lens arranged on the light incident surface side of the semiconductor layer, formed for each pixel group including two or more pixels, and focusing the light from the outside on the pixel group, wherein

[0209] The pixel separation region includes a light collecting portion of the light passing through the on-chip lens, and

[0210] The light-concentrating portion includes a first material extending in a thickness direction of the semiconductor layer, and a portion other than the light-concentrating portion has a second material extending in the thickness direction of the semiconductor layer, the second material being different from the first material. (2)

[0212] The photoelectric detection device according to (1) above, wherein

[0213] The first material is at least one of silicon oxide, titanium oxide, air and a transparent electrode, and

[0214] The second material is a conductor having a higher light absorptivity than the first material. (3)

[0216] The photoelectric detection device according to (1) above, wherein

[0217] A region including impurities of a conductivity type opposite to that of the semiconductor layer is formed on a side wall of the pixel separation region. (4)

[0219] The photoelectric detection device according to (3) above, wherein

[0220] The region including the impurities of the opposite conductivity type is formed on a side wall of the light focusing portion. (5)

[0222] The photoelectric detection device according to (1) above, wherein

[0223] The light-collecting portion forms a fixed charge film that generates negative fixed charges. (6)

[0225] The photoelectric detection device according to (1) above, wherein

[0226] The first material is also provided at an intersection where the pixel separation region extending in the row direction and the pixel separation region extending in the column direction intersect. (7)

[0228] The photoelectric detection device according to (1) above, wherein

[0229] The light-concentrating portion has a circular shape or a rectangular shape in a plan view. (8)

[0231] The light detection device according to (6) above, wherein

[0232] The intersection portion has a circular shape or a rectangular shape in a plan view. (9)

[0234] The photoelectric detection device according to the above (1) further comprises:

[0235] a wiring layer stacked on a surface of the semiconductor layer opposite to the light incident surface and including a metal wiring pattern for applying a predetermined voltage to the plurality of pixels, wherein

[0236] In the light collecting portion, a common pad portion is arranged on a side facing the wiring layer. (10)

[0238] The photoelectric detection device according to (1) above, wherein

[0239] The pixel group includes two pixels in one row and two columns relative to the on-chip lens. (11)

[0241] The photoelectric detection device according to (1) above, wherein

[0242] The pixel group includes four pixels in two rows and two columns relative to the on-chip lens. (12)

[0244] The photoelectric detection device according to (6) above, wherein

[0245] The pixel group includes nine or more pixels in three rows and three columns relative to the on-chip lens. (13)

[0247] The photoelectric detection device according to (2) above, wherein

[0248] The conductor is a boron-containing amorphous silicon film. (14)

[0250] An electronic device comprising a photoelectric detection device, the photoelectric detection device comprising:

[0251] a semiconductor layer in which a plurality of pixels capable of generating an electrical signal according to light incident from the outside are arranged in a matrix form;

[0252] a pixel separation region which is formed in the semiconductor layer and separates adjacent pixels from each other; and

[0253] an on-chip lens arranged on the light incident surface side of the semiconductor layer, formed for each pixel group including two or more pixels, and focusing the light from the outside on the pixel group, wherein

[0254] The pixel separation region includes a light collecting portion of the light passing through the on-chip lens, and

[0255] The light-concentrating portion includes a first material extending in a thickness direction of the semiconductor layer, and a portion other than the light-concentrating portion has a second material extending in the thickness direction of the semiconductor layer, the second material being different from the first material.

[0256] Reference numerals list

[0257] 1,1A,1B,1C,1D,1E,1F,B1 Photoelectric detection device

[0258] 11 Pixel array section

[0259] 12 Vertical drive unit

[0260] 13 Column Processing Unit

[0261] 14 Horizontal drive unit

[0262] 15 System Control Unit

[0263] 16 Signal Processing Unit

[0264] 17 Data Storage Department

[0265] 18 pixel drive lines

[0266] 19 Vertical signal line (VSL)

[0267] 20 Semiconductor Structure

[0268] 21 Wiring layer

[0269] 22 Semiconductor layer

[0270] 23. Planarization film

[0271] 24 Color Filters

[0272] 25 On-chip lens

[0273] 27 Pixel separation unit

[0274] 28 blackout wall

[0275] 29 Fixed Charge Membrane

[0276] 31,32,33,41,51 pixel separation

[0277] 52 shared pad

[0278] 61 Silicon substrate

[0279] 62,66,84 opening

[0280] 63,67,69 Insulation film

[0281] 64 Polysilicon

[0282] 65 Membrane

[0283] 68 Amorphous silicon film

[0284] 71 CIS substrate

[0285] 72,222p type area

[0286] 81,82 Excavation Department

[0287] 83 Coating film

[0288] 110 pixels

[0289] 110B Blue Pixel

[0290] 110BG blue pixel group

[0291] 110G Green Pixel

[0292] 110GG green pixel group

[0293] 110R red pixel

[0294] 110RG Red Pixel Group

[0295] 221 Photoelectric Conversion Department

[0296] 271,311,321,331,411,511 Same color pixel separation unit

[0297] 272,312,322,323,412,512 Different color pixel separation unit

[0298] 273,313,413,513 Focusing Department

[0299] 274,274-1,274-2,274-3,323,333 intersection

[0300] 2201 Camera Device

[0301] 2202 Optical System

[0302] 2203 shutter device

[0303] 2204 solid-state imaging element

[0304] 2205 control circuit

[0305] 2206 signal processing circuit

[0306] 2207 Monitor

[0307] 2208 Memory

[0308] 12000 Vehicle Control Systems

[0309] 12001 Communication Network

[0310] 12010 Drive system control unit

[0311] 12020 Body system control unit

[0312] 12030 External vehicle information detection unit

[0313] 12031 Camera Department

[0314] 12040 In-vehicle information detection unit

[0315] 12041 Driver status detection unit

[0316] 12050 Integrated control unit

[0317] 12051 Microcomputer

[0318] 12052 Sound / image output unit

[0319] 12061 Audio Speaker

[0320] 12062 Display unit

[0321] 12063 Dashboard

[0322] 12100 Vehicles

[0323] 12101 to 12105 Camera Department

[0324] Camera range 12111 to 12114

Claims

1. A photoelectric detection device, comprising: a semiconductor layer in which a plurality of pixels capable of generating an electrical signal according to light incident from the outside are arranged in a matrix form; a pixel separation region which is formed in the semiconductor layer and separates adjacent pixels from each other; as well as an on-chip lens arranged on the light incident surface side of the semiconductor layer, formed for each pixel group including two or more pixels, and focusing the light from the outside on the pixel group, wherein The pixel separation region includes a light collecting portion of the light passing through the on-chip lens, and The light-concentrating portion includes a first material extending in a thickness direction of the semiconductor layer, and a portion other than the light-concentrating portion has a second material extending in the thickness direction of the semiconductor layer, the second material being different from the first material.

2. The photoelectric detection device according to claim 1, wherein The first material is at least one of silicon oxide, titanium oxide, air and a transparent electrode, and The second material is a conductor having a higher light absorptivity than the first material.

3. The photoelectric detection device according to claim 1, wherein A region including impurities of a conductivity type opposite to that of the semiconductor layer is formed on a side wall of the pixel separation region.

4. The photoelectric detection device according to claim 3, wherein The region including the impurities of the opposite conductivity type is formed on a side wall of the light focusing portion.

5. The photoelectric detection device according to claim 1, wherein The light-collecting portion forms a fixed charge film that generates negative fixed charges.

6. The photoelectric detection device according to claim 1, wherein The first material is also provided at an intersection where the pixel separation region extending in the row direction and the pixel separation region extending in the column direction intersect.

7. The photoelectric detection device according to claim 1, wherein The light-concentrating portion has a circular shape or a rectangular shape in a plan view.

8. The light detection device according to claim 6, wherein The intersection portion has a circular shape or a rectangular shape in a plan view.

9. The photoelectric detection device according to claim 1, further comprising: a wiring layer stacked on a surface of the semiconductor layer opposite to the light incident surface and including a metal wiring pattern for applying a predetermined voltage to the plurality of pixels, wherein In the light collecting portion, a common pad portion is arranged on a side facing the wiring layer.

10. The photoelectric detection device according to claim 1, wherein The pixel group includes two pixels in one row and two columns relative to the on-chip lens.

11. The photoelectric detection device according to claim 1, wherein The pixel group includes four pixels in two rows and two columns relative to the on-chip lens.

12. The photoelectric detection device according to claim 6, wherein The pixel group includes nine or more pixels in three rows and three columns relative to the on-chip lens.

13. The photoelectric detection device according to claim 2, wherein The conductor is a boron-containing amorphous silicon film.

14. An electronic device comprising a photoelectric detection device, the photoelectric detection device comprising: a semiconductor layer in which a plurality of pixels capable of generating an electrical signal according to light incident from the outside are arranged in a matrix form; a pixel separation region which is formed in the semiconductor layer and separates adjacent pixels from each other; as well as an on-chip lens arranged on the light incident surface side of the semiconductor layer, formed for each pixel group including two or more pixels, and focusing the light from the outside on the pixel group, wherein The pixel separation region includes a light collecting portion of the light passing through the on-chip lens, and The light-concentrating portion includes a first material extending in a thickness direction of the semiconductor layer, and a portion other than the light-concentrating portion has a second material extending in the thickness direction of the semiconductor layer, the second material being different from the first material.

Images