Graphene preparation optimization method and system

Abstract

The invention relates to the technical field of graphene preparation process control, and discloses a preparation optimization method and system of graphene, a preparation optimization request for a target preparation device is responded, a target copper foil matrix in the target preparation device is determined, a preset detection method is adopted to carry out defect detection on graphene on the target copper foil matrix to obtain a detection index, and the detection index is used to determine the preparation optimization of the target copper foil matrix. When the detection index does not meet the preset standard index condition, performing optimization preparation on the graphene on the target copper foil substrate by adopting a preset optimization strategy to obtain target optimized graphene; according to the method, the graphene at the current moment is subjected to defect detection by adopting the preset detection method, and when the detection index of the graphene does not meet the preset standard index condition, the preparation condition in the process of preparing the graphene by adopting the target preparation device is adjusted by adopting the preset optimization strategy, so that the high-quality graphene is obtained; the technical problem of how to prepare high-quality graphene is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of graphene preparation process control, and in particular to a graphene preparation optimization method and system. Background Art

[0002] Graphene materials have extremely high strength, excellent electrical conductivity and high thermal conductivity, and have broad application potential in the field of energy and power equipment. In the preparation process of graphene materials based on copper matrix, the coordinated and efficient control of parameters such as temperature, pressure and gas flow has always been a difficulty in the preparation of graphene. Efficient preparation of graphene is also a key link in the application of high-quality graphene to composite conductor engineering.

[0003] The existing graphene preparation process control and evaluation are limited to qualitative description, and cannot be quantitative. The prepared graphene only exists at the laboratory level. It has not been actually applied as a high-conductivity composite wire, and no measurement has been conducted in an actual application environment. This has brought difficulties to engineers in manufacturing high-quality graphene copper composite wires. Therefore, a graphene preparation scheme is urgently needed to prepare high-quality graphene. Summary of the invention

[0004] The present invention provides a graphene preparation optimization method and system, which solves the technical problem of how to prepare high-quality graphene.

[0005] The first aspect of the present invention provides a method for optimizing the preparation of graphene, comprising:

[0006] In response to a preparation optimization request for a target preparation device, determining a target copper foil substrate in the target preparation device;

[0007] Using a preset detection method to perform defect detection on the target copper foil substrate to obtain a detection index;

[0008] When the detection index does not meet the preset standard index conditions, a preset optimization strategy is adopted to optimize the preparation of the graphene on the target copper foil substrate to obtain the target optimized graphene.

[0009] Optionally, the preset detection method includes an optical microscope observation method and a Raman spectroscopy method, and the preset detection method is used to perform defect detection on the target copper foil substrate to obtain a detection index, including:

[0010] Using the optical microscope observation method to perform defect detection on the graphene on the target copper foil substrate to obtain a carbon dot detection index;

[0011] The Raman spectroscopy method is used to perform defect detection on the graphene on the target copper foil substrate to obtain a defect peak detection index.

[0012] Optionally, the preset standard index condition is that the carbon dot detection index is less than a preset carbon dot detection threshold and the defect peak detection index is less than a preset defect peak detection threshold.

[0013] Optionally, when the detection index does not meet the preset standard index condition, a preset optimization strategy is used to optimize the preparation of the graphene on the target copper foil substrate to obtain the target optimized graphene, including:

[0014] When the detection index does not meet the preset standard index condition, the reaction temperature value of the target preparation device at the current moment is obtained;

[0015] Comparing the reaction temperature value with a preset standard temperature threshold;

[0016] If the reaction temperature value is greater than or equal to the preset standard temperature threshold, then obtaining the atmosphere volume ratio of the target preparation device at the current moment;

[0017] comparing the atmosphere volume ratio with a preset standard volume ratio threshold;

[0018] If the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold, obtaining the response time of the target preparation device at the current moment;

[0019] comparing the reaction time with a preset standard reaction time threshold;

[0020] If the reaction time is greater than or equal to the preset standard reaction time threshold, the number of graphene layers of the graphene on the target copper foil substrate is obtained;

[0021] Comparing the number of graphene layers with a preset standard number of layers;

[0022] If the number of graphene layers is less than the preset standard number of layers, obtaining the number of graphene carbon points of the graphene on the target copper foil substrate;

[0023] Comparing the graphene carbon point number with a preset standard carbon point number;

[0024] If the graphene carbon point number is less than the preset standard carbon point number, the graphene on the target copper foil substrate at the current moment is used as the target optimized graphene.

[0025] Optionally, it also includes:

[0026] If the reaction temperature value is less than the preset standard temperature threshold, a heating operation is initiated on the target preparation device until the reaction temperature value is greater than or equal to the preset standard temperature threshold.

[0027] Optionally, it also includes:

[0028] If the atmosphere volume ratio is less than the preset standard volume ratio threshold, a pressurization operation is initiated on the target preparation device until the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold.

[0029] Optionally, it also includes:

[0030] If the reaction time is less than the preset standard reaction time threshold, a reaction time extension operation is initiated for the target preparation device until the reaction time is greater than or equal to the preset standard reaction time threshold.

[0031] Optionally, it also includes:

[0032] If the number of graphene layers is greater than or equal to the preset standard number of layers, the process jumps to the step of comparing the atmosphere volume ratio with a preset standard volume ratio threshold.

[0033] Optionally, it also includes:

[0034] If the graphene carbon point number is greater than or equal to the preset standard carbon point number, the process jumps to the step of comparing the reaction temperature value with the preset standard temperature threshold.

[0035] Optionally, it also includes:

[0036] Using the Van der Pauw conductivity measurement method to measure the conductivity of the target copper foil substrate associated with the target optimized graphene to obtain a target conductivity;

[0037] The quality grade of the target optimized graphene is determined according to the preset conductivity classification interval in which the target conductivity is located.

[0038] A second aspect of the present invention provides a graphene preparation optimization system, comprising:

[0039] A response module, used to respond to a preparation optimization request for a target preparation device and determine a target copper foil substrate in the target preparation device;

[0040] A defect detection module, used to perform defect detection on the target copper foil substrate using a preset detection method to obtain a detection index;

[0041] The optimization preparation module is used to optimize the preparation of the graphene on the target copper foil substrate by using a preset optimization strategy to obtain target optimized graphene when the detection index does not meet the preset standard index conditions.

[0042] A third aspect of the present invention provides an electronic device, comprising a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor executes the steps of the graphene preparation optimization method as described in any one of the above items.

[0043] A fourth aspect of the present invention provides a computer-readable storage medium having a computer program stored thereon, wherein the computer program, when executed, implements the graphene preparation optimization method as described in any one of the above items.

[0044] A fifth aspect of the present invention provides a computer program product, which includes a computer program stored on a non-transitory computer-readable storage medium, and the computer program includes program instructions, wherein when the program instructions are executed by a computer, the computer executes the graphene preparation optimization method as described in any one of the above items.

[0045] It can be seen from the above technical solutions that the present invention has the following advantages:

[0046] In the present invention, in response to a preparation optimization request for a target preparation device, a target copper foil substrate in the target preparation device is determined, and a preset detection method is used to perform defect detection on the graphene on the target copper foil substrate to obtain a detection index. When the detection index does not meet the preset standard index condition, a preset optimization strategy is used to optimize the preparation of the graphene on the target copper foil substrate to obtain target optimized graphene. The present invention uses a preset detection method to perform defect detection on the graphene at the current moment. When the detection index of the graphene does not meet the preset standard index condition, a preset optimization strategy is used to adjust the preparation conditions in the process of preparing graphene by the target preparation device, thereby obtaining high-quality graphene. The technical problem of how to prepare high-quality graphene is solved. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0048] Figure 1 A flowchart of the steps of a method for optimizing the preparation of graphene provided in Example 1 of the present invention;

[0049] Figure 2 A flowchart of the steps of a method for optimizing the preparation of graphene provided in the second embodiment of the present invention;

[0050] Figure 3 A schematic diagram of the structure of a graphene preparation device provided by the present invention;

[0051] Figure 4 is the light micrograph measured by the light micrograph observation method;

[0052] Figure 5is the Raman spectrum measured by Raman spectroscopy;

[0053] Figure 6 It is a flowchart of the preset optimization strategy;

[0054] Figure 7 A structural block diagram of a graphene preparation optimization system provided in Embodiment 3 of the present invention;

[0055] Figure 8 This is a structural block diagram of a computer device provided in Embodiment 4 of the present invention. DETAILED DESCRIPTION

[0056] The embodiments of the present invention provide a graphene preparation optimization method and system for solving the technical problem of how to prepare high-quality graphene.

[0057] In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described below are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0058] See also Figure 1 , Figure 1 A flowchart of the steps of a method for optimizing the preparation of graphene provided in Example 1 of the present invention.

[0059] The present invention provides a method for optimizing the preparation of graphene, comprising:

[0060] Step 101: respond to a preparation optimization request for a target preparation device and determine a target copper foil substrate in the target preparation device.

[0061] The target preparation device refers to a graphene preparation device used to prepare graphene.

[0062] The preparation optimization request refers to the request instruction information for optimizing the preparation of graphene by the target preparation device.

[0063] The target copper foil substrate refers to the copper foil substrate used to prepare graphene in the target preparation device.

[0064] In an embodiment of the present invention, in response to receiving request instruction information for optimizing the preparation of graphene by a target preparation device, a target copper foil substrate for preparing graphene in the target preparation device is determined.

[0065] Step 102: Use a preset detection method to perform defect detection on the target copper foil substrate to obtain detection indicators.

[0066] The preset detection method refers to a detection method used to detect defects in graphene on a target copper foil substrate.

[0067] Detection indicators refer to the detection results obtained by defect detection based on preset detection methods.

[0068] In the embodiment of the present invention, a preset detection method is used to perform defect detection on the graphene on the target copper foil substrate, and a detection index of the graphene on the target copper foil substrate is generated according to the detection result.

[0069] Step 103: When the detection index does not meet the preset standard index conditions, a preset optimization strategy is used to optimize the preparation of the graphene on the target copper foil substrate to obtain the target optimized graphene.

[0070] In an embodiment of the present invention, when the detection index of the graphene currently being prepared by the target preparation device does not meet the preset standard index conditions, a preset optimization strategy is adopted to adjust the preparation conditions in the process of preparing graphene by the target preparation device, so that the target preparation device can prepare high-quality target optimized graphene.

[0071] In the present invention, in response to a preparation optimization request for a target preparation device, a target copper foil substrate in the target preparation device is determined, and a preset detection method is used to perform defect detection on the graphene on the target copper foil substrate to obtain a detection index. When the detection index does not meet the preset standard index condition, a preset optimization strategy is used to optimize the preparation of the graphene on the target copper foil substrate to obtain target optimized graphene. The present invention uses a preset detection method to perform defect detection on the graphene at the current moment. When the detection index of the graphene does not meet the preset standard index condition, a preset optimization strategy is used to adjust the preparation conditions in the process of preparing graphene by the target preparation device, thereby obtaining high-quality graphene. The technical problem of how to prepare high-quality graphene is solved.

[0072] See also Figure 2 , Figure 2 A flowchart of the steps of a method for optimizing the preparation of graphene provided in Example 2 of the present invention.

[0073] The present invention provides a method for optimizing the preparation of graphene, comprising:

[0074] See also Figure 3 , Figure 3 A schematic diagram of the structure of a graphene preparation device provided by the present invention, which is used in the graphene preparation optimization method of the present invention, wherein the graphene preparation device includes a heating system, a gas supply system, a growth reactor, a graphene detection module and a controller;

[0075] The heating system is connected to the growth reactor through a connecting pipe, and the growth reactor is used to place the target copper foil substrate;

[0076] The heating system is a tubular furnace, which is a commonly used temperature control device in the graphene preparation process. The working principle of the tubular furnace is based on Joule heating, which generates heat by passing current through a resistance wire. The structure of the tubular furnace includes a furnace body, a furnace tube, a heating element (the heating element is a resistance wire), a temperature sensor and a temperature controller;

[0077] The heating elements are distributed around the furnace tube. When the current passes through the resistance wire, the resistance wire heats up and transfers the heat to the reaction area in the furnace tube. The temperature sensor (the temperature sensor is a thermocouple) monitors the temperature in the furnace tube in real time and feeds the temperature signal back to the temperature controller. The temperature controller compares the set temperature value with the actual temperature value fed back, and then adjusts the current of the heating element to accurately control the reaction temperature in the furnace tube.

[0078] The furnace tube is connected to the connecting tube, and the heat generated by the heating element is transmitted to the growth reactor through the connecting tube to heat the target copper foil substrate placed in the growth reactor, so as to ensure that the carbon source gas such as methane is decomposed and deposited on the substrate to form high-quality graphene;

[0079] The gas supply system is connected to the growth reactor via a connecting pipe;

[0080] The gas supply system is responsible for providing reaction gases and carrier gases to the reaction chamber. Reaction gases such as methane are carbon sources that provide carbon atoms for the formation of graphene; hydrogen is usually used as a reducing gas to remove impurities such as oxides on the surface of the substrate and also helps regulate the reaction process.

[0081] The gas supply system includes gas storage cylinders and gas flow controllers. The gas flow controller can accurately adjust the flow of each gas, for example, the flow of methane can be controlled at tens of milliliters per minute and the flow of hydrogen can be controlled at hundreds of milliliters per minute to ensure that the reaction proceeds according to the predetermined stoichiometric ratio.

[0082] The gas storage cylinder is used to store methane, and transmit the stored methane to the growth reactor through the connecting pipe to provide methane gas for the target copper foil substrate in the growth reactor;

[0083] A temperature sensor and a gas combination sensor are arranged in the growth reactor, and the temperature sensor is used to measure the reaction temperature in the growth reactor;

[0084] The gas combination sensor includes a methane sensor, a hydrogen sensor and a processor;

[0085] Both the methane sensor and the hydrogen sensor are connected to the processor;

[0086] The methane sensor is used to measure the methane concentration in the growth reactor;

[0087] The hydrogen sensor is used to measure the hydrogen concentration in the growth reactor;

[0088] The processor is used to receive the methane concentration and the hydrogen concentration for calculation to obtain the atmosphere volume ratio of methane to hydrogen.

[0089] The heating system, the gas supply system, the growth reactor, the temperature sensor, the gas combination sensor and the graphene detection module are all connected to the controller;

[0090] The graphene detection module and the growth reactor are used to detect defects of the graphene on the target copper foil substrate using a preset detection method, obtain detection indicators, and transmit them to the controller;

[0091] The controller is used to control the heating system to start a heating operation on the target preparation device;

[0092] It is also used to control the gas supply system to start the pressurization operation of the target preparation device;

[0093] A timer is provided in the controller. When the reaction temperature value in the growth reactor reaches the preset standard temperature threshold, timing is started, and the reaction time is obtained according to the timing result. The starting time of the reaction time here is the moment when the reaction temperature value is greater than or equal to the preset standard temperature threshold, and the end time is the moment when the reaction temperature value is less than the preset standard temperature threshold.

[0094] It is also used to control the opening and closing of a control valve on a connecting pipe between a heating system and a growth reactor according to reaction time;

[0095] When the reaction time is less than the preset standard reaction time threshold, the reaction time extension operation is started for the target preparation device, that is, the control valve on the control connecting pipe is opened, and the heating system continuously supplies heat to the growth reactor, so that the reaction temperature value continues to remain greater than or equal to the preset standard temperature threshold, and the current reaction temperature value is maintained until the reaction time is greater than or equal to the preset standard reaction time threshold.

[0096] Step 201 : responding to a preparation optimization request for a target preparation device, determining a target copper foil substrate in the target preparation device.

[0097] In the embodiment of the present invention, the specific implementation process of step 201 is similar to step 101 and will not be repeated here.

[0098] Step 202: Use a preset detection method to perform defect detection on the target copper foil substrate to obtain detection indicators.

[0099] Furthermore, the preset detection method includes light microscopy observation method and Raman spectroscopy method, and step 202 may include the following sub-steps:

[0100] S11. Use the optical microscope observation method to perform defect detection on the graphene on the target copper foil substrate to obtain the carbon dot detection index.

[0101] It should be noted that the carbon dot detection index is the number of carbon dots on the graphene surface.

[0102] See also Figure 4 , Figure 4 This is a light microscopy image measured using the light microscopy observation method.

[0103] It should be noted that, since graphene is prepared on the target copper foil substrate, graphene and the target copper foil substrate are a composite, so the optical microscope image measured by the optical microscope image observation method is an optical microscope image of the composite composed of graphene and the target copper foil substrate.

[0104] In an embodiment of the present invention, a light microscopy observation method is used to perform defect detection on a target copper foil substrate to obtain a light microscopy image of the target copper foil substrate. By analyzing the light microscopy image, the number of carbon dots on the target copper foil substrate and the graphene surface can be obtained.

[0105] S12. Use Raman spectroscopy to perform defect detection on the graphene on the target copper foil substrate to obtain a defect peak detection index.

[0106] See also Figure 5 , Figure 5 is the Raman spectrum measured by Raman spectroscopy.

[0107] Through graphene Raman spectroscopy, graphene G peak, D peak and 2D peak are observed.

[0108] Among them, the G peak is the main characteristic peak of graphene, which is caused by the in-plane vibration of sp2 carbon atoms and appears at 1580cm -1 This peak can effectively reflect the number of graphene layers; the D peak is the disordered vibration peak of graphene, and its specific position is related to the laser wavelength. It is caused by the lattice vibration leaving the center of the Brillouin zone and is used to characterize the structural defects or edges in the graphene sample; the 2D peak is the second-order Raman peak of the double phonon resonance, which is used to characterize the interlayer stacking mode of carbon atoms in the graphene sample.

[0109] In an embodiment of the present invention, Raman spectroscopy is used to perform defect detection on graphene on a target copper foil substrate. Based on the Raman spectrum, it is possible to determine whether the graphene has structural defects or edges, where the presence is recorded as 1 and the absence is recorded as 0, thereby generating a defect peak detection index.

[0110] Furthermore, the preset standard index condition is that the carbon dot detection index is less than a preset carbon dot detection threshold and the defect peak detection index is less than a preset defect peak detection threshold.

[0111] It should be noted that the preset standard index conditions are that the carbon dot detection index is less than the preset carbon dot detection threshold and the defect peak detection index is less than the preset defect peak detection threshold, and the preset carbon dot detection threshold and the preset defect peak detection threshold are both 1, which can be understood as the composite formed by the combination of graphene and the target copper foil substrate has no defect peaks and there are no carbon dots on the surface.

[0112] Furthermore, when the detection index meets the preset standard index condition, the graphene on the target copper foil substrate at the current moment is taken as the target optimized graphene.

[0113] It should be noted that when the detection index meets the preset standard index conditions, it indicates that the graphene on the target copper foil substrate at this time is high-quality graphene, and there is no need to perform preparation optimization, and the graphene at the current moment can be used as the target optimized graphene.

[0114] Step 203: When the detection index does not meet the preset standard index condition, a preset optimization strategy is used to optimize the preparation of graphene on the target copper foil substrate to obtain target optimized graphene.

[0115] See also Figure 6 , Figure 6 It is a flowchart of the preset optimization strategy;

[0116] Further, step 203 may include the following sub-steps:

[0117] S21. When the detection index does not meet the preset standard index condition, the reaction temperature value of the target preparation device at the current moment is obtained.

[0118] In an embodiment of the present invention, when the detection index does not meet the preset standard index condition, the reaction temperature value of the target preparation device at the current moment is obtained.

[0119] S22. Compare the reaction temperature value with a preset standard temperature threshold.

[0120] It should be noted that experiments have shown that within the reaction temperature range for graphene preparation, when the graphene preparation reaction temperature is greater than or equal to 900°C, the quality of the prepared graphene is optimal. Therefore, the preset standard temperature threshold here is preferably 900°C.

[0121] In the embodiment of the present invention, the reaction temperature value is compared with a preset standard temperature threshold.

[0122] S23. If the reaction temperature value is greater than or equal to the preset standard temperature threshold, the atmosphere volume ratio of the target preparation device at the current moment is obtained.

[0123] In an embodiment of the present invention, if the reaction temperature value is greater than or equal to a preset standard temperature threshold, the atmosphere volume ratio of the target preparation device at the current moment is obtained.

[0124] The atmosphere volume ratio here is the atmosphere volume ratio of methane to hydrogen.

[0125] S24. If the reaction temperature value is less than the preset standard temperature threshold, a heating operation is started on the target preparation device until the reaction temperature value is greater than or equal to the preset standard temperature threshold.

[0126] In an embodiment of the present invention, if the reaction temperature value is less than the preset standard temperature threshold, the heating system in the target preparation device is controlled to start the heating operation until the reaction temperature value is greater than or equal to the preset standard temperature threshold, and then jumps to the step of obtaining the atmosphere volume ratio of the target preparation device at the current moment.

[0127] S25. Compare the atmosphere volume ratio with a preset standard volume ratio threshold.

[0128] It should be noted that the preset standard volume ratio threshold is preferably 9.

[0129] In the embodiment of the present invention, the atmosphere volume ratio is compared with a preset standard volume ratio threshold.

[0130] S26. If the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold, the response time of the target preparation device at the current moment is obtained.

[0131] It should be noted that the reaction time refers to the time duration during which the reaction temperature in the current growth reactor is maintained at a value greater than or equal to 900° C.

[0132] In an embodiment of the present invention, if the atmosphere volume ratio is greater than or equal to a preset standard volume ratio threshold, the response time of the target preparation device at the current moment is obtained.

[0133] S27. If the atmosphere volume ratio is less than the preset standard volume ratio threshold, start the pressurization operation on the target preparation device until the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold.

[0134] In an embodiment of the present invention, if the atmosphere volume ratio is less than a preset standard volume ratio threshold, the gas supply system in the target preparation device is controlled to add methane gas to the growth reactor until the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold, then jumping to the step of obtaining the reaction time of the target preparation device at the current moment.

[0135] S28. Compare the reaction time with a preset standard reaction time threshold.

[0136] It should be noted that the preset standard reaction time threshold is preferably 10 hours.

[0137] In the embodiment of the present invention, the reaction time is compared with a preset standard reaction time threshold.

[0138] S29. If the reaction time is greater than or equal to a preset standard reaction time threshold, the number of graphene layers of the graphene on the target copper foil substrate is obtained.

[0139] In an embodiment of the present invention, if the reaction time is greater than or equal to a preset standard reaction time threshold, the number of graphene layers of the graphene on the target copper foil substrate is determined by Raman spectroscopy. It is worth mentioning that the number of graphene layers of the graphene on the target copper foil substrate can also be determined by any one of optical microscopy, atomic force microscopy, transmission electron microscopy and transmission electron microscopy.

[0140] S210: If the reaction time is less than the preset standard reaction time threshold, start a reaction time extension operation for the target preparation device until the reaction time is greater than or equal to the preset standard reaction time threshold.

[0141] In an embodiment of the present invention, if the reaction time is less than a preset standard reaction time threshold, the reaction time extension operation is started for the target preparation device, that is, the heating system is controlled to continue heating so that the reaction temperature in the growth reactor is maintained at greater than or equal to 900°C, and the reaction time is maintained for 10 hours, then the process jumps to the step of obtaining the number of graphene layers of the graphene on the target copper foil substrate.

[0142] S211, comparing the number of graphene layers with a preset standard number of layers.

[0143] It should be noted that the preset standard number of layers is preferably 2 layers.

[0144] In the embodiment of the present invention, the number of graphene layers is compared with a preset standard number of layers.

[0145] S212. If the number of graphene layers is less than the preset standard number of layers, the number of graphene carbon points of the graphene on the target copper foil substrate is obtained.

[0146] In the embodiment of the present invention, if the number of graphene layers is less than the preset standard number of layers, the number of graphene carbon points of the graphene on the target copper foil substrate is obtained, and the number is obtained by optical microscopy observation method.

[0147] S213: If the number of graphene layers is greater than or equal to the preset standard number of layers, jump to the step of comparing the atmosphere volume ratio with the preset standard volume ratio threshold.

[0148] In the embodiment of the present invention, if the number of graphene layers is greater than or equal to the preset standard number of layers, the process jumps to the step of comparing the atmosphere volume ratio with the preset standard volume ratio threshold.

[0149] S214, comparing the graphene carbon point number with a preset standard carbon point number.

[0150] It should be noted that the preset standard carbon point number is preferably 2.

[0151] In the embodiment of the present invention, the number of graphene carbon points is compared with a preset standard number of carbon points.

[0152] S215. If the number of graphene carbon points is less than the preset standard number of carbon points, the graphene on the target copper foil substrate at the current moment is used as the target optimized graphene.

[0153] In the embodiment of the present invention, if the number of graphene carbon points is less than the preset standard number of carbon points, the graphene on the target copper foil substrate at the current moment is used as the target optimized graphene.

[0154] S216: If the number of graphene carbon points is greater than or equal to the preset standard carbon point number, jump to the step of comparing the reaction temperature value with the preset standard temperature threshold.

[0155] In the embodiment of the present invention, if the number of graphene carbon points is greater than or equal to the preset standard number of carbon points, the process jumps to the step of comparing the reaction temperature value with the preset standard temperature threshold.

[0156] Step 204: Use the Van der Pauw conductivity measurement method to measure the conductivity of the target copper foil substrate associated with the target optimized graphene to obtain the target conductivity.

[0157] In an embodiment of the present invention, the Van der Pauw conductivity measurement method is used to measure the conductivity of the target copper foil substrate associated with the target optimized graphene, that is, the copper material (graphene / copper) is cut into a standard size of 2×2 cm², and the Van der Pauw method is used to test the conductivity of the copper foil substrate based on the thickness parameter, and the resistance tested by the Van der Pauw method is converted into conductivity.

[0158] Step 205: Determine the quality grade of the target optimized graphene according to the preset conductivity classification interval in which the target conductivity is located.

[0159] Further, the preset conductivity classification intervals include a first preset conductivity classification interval, a second preset conductivity classification interval, a third preset conductivity classification interval, a fourth preset conductivity classification interval and a fifth preset conductivity classification interval, and step 205 may include the following sub-steps:

[0160] S31, when the target conductivity is in the first preset conductivity classification interval, determining that the target optimized graphene is grade A graphene;

[0161] S32, when the target conductivity is in the second preset conductivity classification interval, determining that the target optimized graphene is class B graphene;

[0162] S33, when the target conductivity is in the third preset conductivity classification interval, determining that the target optimized graphene is C-grade graphene;

[0163] S34, when the target conductivity is in the fourth preset conductivity classification interval, determining that the target optimized graphene is D-grade graphene;

[0164] S35, when the target conductivity is in the fifth preset conductivity classification interval, determining that the target optimized graphene is E-grade graphene;

[0165] In an embodiment of the present invention, the preset conductivity grading interval is divided into five intervals, namely, a first preset conductivity grading interval, a second preset conductivity grading interval, a third preset conductivity grading interval, a fourth preset conductivity grading interval and a fifth preset conductivity grading interval. The preset conductivity grading interval is divided according to the International Annealed Copper Standard (IACS), using the relative conductivity standard based on the conductivity of annealed pure copper as a benchmark, and using 1.5% IACS greater than the conductivity of pure copper as a gradient for interval division. For example, if the conductivity of pure copper is 100% IACS, then 101.5% IACS is used as an interval to divide different intervals. The first interval is from 100% IACS to 101.5% IACS, and the next interval is from 101.5 IACS to 103% IACS. The height of each step is 1.5% IACS, dividing the numerical range of conductivity into different intervals. The range of the first preset conductivity grading interval is [100% IACS, 101.5% IACS], the range of the second preset conductivity grading interval is (101.5% IACS, 103% IACS], the range of the third preset conductivity grading interval is (103% IACS, 104.5% IACS], the range of the fourth preset conductivity grading interval is (104.5% IACS, 106% IACS], and the range of the fifth preset conductivity grading interval is (106% IACS, 107.5% IACS]; among them, E-grade graphene has the highest quality.

[0166] In the present invention, in response to a preparation optimization request for a target preparation device, a target copper foil substrate in the target preparation device is determined, and a preset detection method is used to perform defect detection on the graphene on the target copper foil substrate to obtain a detection index. When the detection index does not meet the preset standard index condition, a preset optimization strategy is used to optimize the preparation of the graphene on the target copper foil substrate to obtain target optimized graphene. The present invention uses a preset detection method to perform defect detection on the graphene at the current moment. When the detection index of the graphene does not meet the preset standard index condition, a preset optimization strategy is used to adjust the preparation conditions in the process of preparing graphene by the target preparation device, thereby obtaining high-quality graphene. The technical problem of how to prepare high-quality graphene is solved.

[0167] See also Figure 7 , Figure 7This is a structural block diagram of a graphene preparation optimization system provided in Example 3 of the present invention.

[0168] The present invention provides a graphene preparation optimization system, comprising:

[0169] A response module 301 is used to respond to a preparation optimization request for a target preparation device and determine a target copper foil substrate in the target preparation device;

[0170] The defect detection module 302 is used to perform defect detection on the target copper foil substrate using a preset detection method to obtain a detection index;

[0171] The optimization preparation module 303 is used to optimize the preparation of the graphene on the target copper foil substrate using a preset optimization strategy to obtain the target optimized graphene when the detection index does not meet the preset standard index conditions.

[0172] Furthermore, the preset detection methods include light microscopy observation method and Raman spectroscopy method, and the defect detection module 302 includes:

[0173] A carbon dot detection index submodule is used to perform defect detection on the graphene on the target copper foil substrate by using an optical microscope observation method to obtain a carbon dot detection index;

[0174] The defect peak detection index submodule is used to perform defect detection on the graphene on the target copper foil substrate using Raman spectroscopy to obtain a defect peak detection index.

[0175] Furthermore, the preset standard index condition is that the carbon dot detection index is less than a preset carbon dot detection threshold and the defect peak detection index is less than a preset defect peak detection threshold.

[0176] Furthermore, the optimization preparation module 303 includes:

[0177] The reaction temperature value submodule is used to obtain the reaction temperature value of the target preparation device at the current moment when the detection index does not meet the preset standard index condition;

[0178] The temperature comparison submodule is used to compare the reaction temperature value with the preset standard temperature threshold;

[0179] The atmosphere volume ratio submodule is used to obtain the atmosphere volume ratio of the target preparation device at the current moment if the reaction temperature value is greater than or equal to the preset standard temperature threshold;

[0180] The volume comparison submodule is used to compare the atmosphere volume ratio with a preset standard volume ratio threshold;

[0181] A reaction time submodule, for obtaining the reaction time of the target preparation device at the current moment if the atmosphere volume ratio is greater than or equal to a preset standard volume ratio threshold;

[0182] A reaction time comparison submodule, used to compare the reaction time with a preset standard reaction time threshold;

[0183] A graphene layer number submodule, for obtaining the number of graphene layers of the graphene on the target copper foil substrate if the reaction time is greater than or equal to a preset standard reaction time threshold;

[0184] A layer number comparison submodule is used to compare the number of graphene layers with a preset standard number of layers;

[0185] A graphene carbon point number submodule, for obtaining the graphene carbon point number of the graphene on the target copper foil substrate if the number of graphene layers is less than a preset standard number of layers;

[0186] The carbon point number comparison submodule is used to compare the graphene carbon point number with the preset standard carbon point number;

[0187] The target optimized graphene output submodule is used to take the graphene on the target copper foil substrate at the current moment as the target optimized graphene if the graphene carbon point number is less than the preset standard carbon point number.

[0188] Furthermore, the optimization preparation module 303 also includes:

[0189] The first processing submodule is used to start a heating operation on the target preparation device if the reaction temperature value is less than a preset standard temperature threshold, until the reaction temperature value is greater than or equal to the preset standard temperature threshold.

[0190] Furthermore, the optimization preparation module 303 also includes:

[0191] The second processing submodule is used to start the pressurization operation on the target preparation device if the atmosphere volume ratio is less than the preset standard volume ratio threshold value, until the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold value.

[0192] Furthermore, the optimization preparation module 303 also includes:

[0193] The third processing submodule is used to start a reaction time extension operation for the target preparation device if the reaction time is less than a preset standard reaction time threshold, until the reaction time is greater than or equal to the preset standard reaction time threshold.

[0194] Furthermore, the optimization preparation module 303 also includes:

[0195] The fourth processing submodule is used to jump to the step of comparing the atmosphere volume ratio with a preset standard volume ratio threshold if the number of graphene layers is greater than or equal to a preset standard number of layers.

[0196] Furthermore, the optimization preparation module 303 also includes:

[0197] The fifth processing submodule is used to jump to the step of comparing the reaction temperature value with the preset standard temperature threshold if the number of graphene carbon points is greater than or equal to the preset standard carbon point number.

[0198] Furthermore, it also includes:

[0199] A target conductivity module, used to measure the conductivity of a target copper foil substrate associated with the target optimized graphene using a Van der Pauw conductivity measurement method to obtain a target conductivity;

[0200] The quality grade module is used to determine the quality grade of the target optimized graphene according to the preset conductivity grade interval in which the target conductivity is located.

[0201] In the present invention, in response to a preparation optimization request for a target preparation device, a target copper foil substrate in the target preparation device is determined, and a preset detection method is used to perform defect detection on the graphene on the target copper foil substrate to obtain a detection index. When the detection index does not meet the preset standard index condition, a preset optimization strategy is used to optimize the preparation of the graphene on the target copper foil substrate to obtain target optimized graphene. The present invention uses a preset detection method to perform defect detection on the graphene at the current moment. When the detection index of the graphene does not meet the preset standard index condition, a preset optimization strategy is used to adjust the preparation conditions in the process of preparing graphene by the target preparation device, thereby obtaining high-quality graphene. The technical problem of how to prepare high-quality graphene is solved.

[0202] See also Figure 8 , Figure 8 This is a structural block diagram of a computer device provided in Embodiment 4 of the present invention.

[0203] An electronic device according to an embodiment of the present invention comprises: a memory 401 and a processor 402, wherein the memory 402 stores a computer program; when the computer program is executed by the processor 402, the processor 402 executes the graphene preparation optimization method as described in any of the above embodiments.

[0204] The memory 401 may be an electronic memory such as a flash memory, an EEPROM (electrically erasable programmable read-only memory), an EPROM, a hard disk or a ROM. The memory 401 has a storage space 403 for a program code 413 for executing any method step in the above method. For example, the storage space 403 for the program code may include individual program codes 413 for implementing the various steps in the above method, respectively. These program codes may be read from or written to one or more computer program products. These computer program products include program code carriers such as hard disks, compact disks (CDs), memory cards or floppy disks. The program code may be compressed, for example, in an appropriate form. When these codes are run by a computing and processing device, the computing and processing device performs the various steps in the method described above. These program codes may be read from or written to one or more computer program products. These computer program products include program code carriers such as hard disks, compact disks (CDs), memory cards or floppy disks. The program code may be compressed, for example, in an appropriate form. When these codes are executed by a computing and processing device, they cause the computing and processing device to execute the various steps in the above-described method for optimizing the preparation of graphene.

[0205] Embodiment 5 of the present invention further provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the method for optimizing the preparation of graphene as described in any of the above embodiments is implemented.

[0206] Embodiment 6 of the present invention further provides a computer program product, which includes a computer program stored on a non-transitory computer-readable storage medium, and the computer program includes program instructions, wherein when the program instructions are executed by a computer, the computer executes a method for optimizing the preparation of graphene as described in any of the above embodiments.

[0207] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0208] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0209] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0210] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0211] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the methods of each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc. Various media that can store program codes.

[0212] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for optimizing the preparation of graphene, characterized in that: include: In response to a preparation optimization request for a target preparation device, determining a target copper foil substrate in the target preparation device; Using a preset detection method to perform defect detection on the target copper foil substrate to obtain a detection index; When the detection index does not meet the preset standard index conditions, a preset optimization strategy is adopted to optimize the preparation of the graphene on the target copper foil substrate to obtain the target optimized graphene.

2. The method for optimizing the preparation of graphene according to claim 1, characterized in that: The preset detection method includes light microscope observation method and Raman spectroscopy method. The preset detection method is used to perform defect detection on the target copper foil substrate to obtain detection indicators, including: Using the optical microscope observation method to perform defect detection on the graphene on the target copper foil substrate to obtain a carbon dot detection index; The Raman spectroscopy method is used to perform defect detection on the graphene on the target copper foil substrate to obtain a defect peak detection index.

3. The method for optimizing the preparation of graphene according to claim 2, characterized in that: The preset standard index condition is that the carbon dot detection index is less than a preset carbon dot detection threshold and the defect peak detection index is less than a preset defect peak detection threshold.

4. The method for optimizing the preparation of graphene according to claim 1, characterized in that: When the detection index does not meet the preset standard index condition, a preset optimization strategy is used to optimize the preparation of the graphene on the target copper foil substrate to obtain the target optimized graphene, including: When the detection index does not meet the preset standard index condition, the reaction temperature value of the target preparation device at the current moment is obtained; Comparing the reaction temperature value with a preset standard temperature threshold; If the reaction temperature value is greater than or equal to the preset standard temperature threshold, then obtaining the atmosphere volume ratio of the target preparation device at the current moment; comparing the atmosphere volume ratio with a preset standard volume ratio threshold; If the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold, obtaining the response time of the target preparation device at the current moment; comparing the reaction time with a preset standard reaction time threshold; If the reaction time is greater than or equal to the preset standard reaction time threshold, the number of graphene layers of the graphene on the target copper foil substrate is obtained; Comparing the number of graphene layers with a preset standard number of layers; If the number of graphene layers is less than the preset standard number of layers, obtaining the number of graphene carbon points of the graphene on the target copper foil substrate; Comparing the graphene carbon point number with a preset standard carbon point number; If the graphene carbon point number is less than the preset standard carbon point number, the graphene on the target copper foil substrate at the current moment is used as the target optimized graphene.

5. The method for optimizing the preparation of graphene according to claim 4, characterized in that: Also includes: If the reaction temperature value is less than the preset standard temperature threshold, a heating operation is initiated on the target preparation device until the reaction temperature value is greater than or equal to the preset standard temperature threshold.

6. The method for optimizing the preparation of graphene according to claim 4, characterized in that: Also includes: If the atmosphere volume ratio is less than the preset standard volume ratio threshold, a pressurization operation is initiated on the target preparation device until the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold.

7. The method for optimizing the preparation of graphene according to claim 4, characterized in that: Also includes: If the reaction time is less than the preset standard reaction time threshold, a reaction time extension operation is initiated for the target preparation device until the reaction time is greater than or equal to the preset standard reaction time threshold.

8. The method for optimizing the preparation of graphene according to claim 4, characterized in that: Also includes: If the number of graphene layers is greater than or equal to the preset standard number of layers, the process jumps to the step of comparing the atmosphere volume ratio with a preset standard volume ratio threshold.

9. The method for optimizing the preparation of graphene according to claim 4, characterized in that: Also includes: If the graphene carbon point number is greater than or equal to the preset standard carbon point number, the process jumps to the step of comparing the reaction temperature value with the preset standard temperature threshold.

10. The method for optimizing the preparation of graphene according to claim 1, characterized in that: Also includes: Using the Van der Pauw conductivity measurement method to measure the conductivity of the target copper foil substrate associated with the target optimized graphene to obtain a target conductivity; The quality grade of the target optimized graphene is determined according to the preset conductivity classification interval in which the target conductivity is located.

11. A graphene preparation optimization system, characterized in that: include: A response module, used to respond to a preparation optimization request for a target preparation device and determine a target copper foil substrate in the target preparation device; A defect detection module, used to perform defect detection on the target copper foil substrate using a preset detection method to obtain a detection index; The optimization preparation module is used to optimize the preparation of the graphene on the target copper foil substrate by using a preset optimization strategy to obtain target optimized graphene when the detection index does not meet the preset standard index conditions.

12. An electronic device, characterized in that: It comprises a memory and a processor, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the processor executes the steps of the graphene preparation optimization method as described in any one of claims 1 to 10.

13. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed, the graphene preparation optimization method according to any one of claims 1 to 10 is implemented.

14. A computer program product, characterized in that The computer program product comprises a computer program stored on a non-transitory computer-readable storage medium, wherein the computer program comprises program instructions, wherein when the program instructions are executed by a computer, the computer is caused to execute the graphene preparation optimization method as described in any one of claims 1 to 10.

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