An optimized method and system for the preparation of graphene

Abstract

This invention relates to the field of graphene preparation process control technology, and discloses a method and system for optimizing graphene preparation. Responding to a request for optimization of the preparation of a target preparation device, the method identifies the target copper foil substrate within the device, uses a preset detection method to detect defects in the graphene on the target copper foil substrate, obtains detection indicators, and if the detection indicators do not meet the preset standard conditions, a preset optimization strategy is used to optimize the preparation of the graphene on the target copper foil substrate, resulting in optimized graphene. This invention uses a preset detection method to detect defects in the graphene at the current moment. When the detection indicators of the graphene do not meet the preset standard conditions, a preset optimization strategy is used to adjust the preparation conditions during the graphene preparation process of the target preparation device, thereby obtaining high-quality graphene. This invention solves the technical problem of how to prepare high-quality graphene.

Description

Technical Field

[0001] This invention relates to the field of graphene preparation process control technology, and in particular to an optimized method and system for graphene preparation. Background Technology

[0002] Graphene materials possess extremely high strength, excellent electrical conductivity, and high thermal conductivity, making them promising for applications in the energy and power equipment sector. In the fabrication process of copper-based graphene materials, the efficient and coordinated control of parameters such as temperature, pressure, and gas flow rate has always been a challenge. Efficient graphene fabrication is also a crucial step towards achieving high-quality graphene for engineering applications in composite wires.

[0003] Current graphene fabrication processes are limited to qualitative descriptions and cannot be quantified. Furthermore, the prepared graphene exists only at the laboratory level and has not yet been practically applied as a high-conductivity composite wire, nor has it been measured in real-world environments. This poses a challenge for engineers manufacturing high-quality graphene-copper composite wires. Therefore, a novel graphene fabrication method is urgently needed to produce high-quality graphene. Summary of the Invention

[0004] This invention provides an optimized method and system for preparing graphene, solving the technical problem of how to prepare high-quality graphene.

[0005] The first aspect of this invention provides an optimized method for preparing graphene, comprising:

[0006] In response to a request for optimization of the fabrication of the target fabrication apparatus, the target copper foil substrate within the target fabrication apparatus is determined;

[0007] Defect detection was performed on the target copper foil substrate using a preset detection method to obtain detection indicators;

[0008] When the detection index does not meet the preset standard index conditions, a preset optimization strategy is adopted to optimize the preparation of graphene on the target copper foil substrate to obtain the target optimized graphene.

[0009] Optionally, the preset detection method includes optical microscopy and Raman spectroscopy. The defect detection of the target copper foil substrate using the preset detection method yields detection indicators, including:

[0010] The graphene on the target copper foil substrate was subjected to defect detection using the optical microscopy observation method, and carbon dot detection index was obtained.

[0011] The Raman spectroscopy method was used to detect defects in the graphene on the target copper foil substrate, and the defect peak detection index was obtained.

[0012] Optionally, the preset standard index condition is that the carbon dot detection index is less than the preset carbon dot detection threshold and the defect peak detection index is less than the preset defect peak detection threshold.

[0013] Optionally, when the detection index does not meet the preset standard index conditions, a preset optimization strategy is used to optimize the preparation of graphene on the target copper foil substrate to obtain the target optimized graphene, including:

[0014] When the detection index does not meet the preset standard index conditions, the reaction temperature value of the target preparation device at the current time is obtained;

[0015] Compare the reaction temperature value with a preset standard temperature threshold;

[0016] If the reaction temperature value is greater than or equal to the preset standard temperature threshold, then the atmosphere volume ratio of the target preparation device at the current moment is obtained;

[0017] Compare the atmosphere volume ratio with a preset standard volume ratio threshold;

[0018] If the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold, then the reaction time of the target preparation device at the current moment is obtained;

[0019] Compare the reaction time with a preset standard reaction time threshold;

[0020] If the reaction time is greater than or equal to the preset standard reaction time threshold, then the number of graphene layers on the target copper foil substrate is obtained.

[0021] Compare the number of graphene layers with the preset standard number of layers;

[0022] If the number of graphene layers is less than the preset standard number of layers, then obtain the number of graphene carbon dots on the target copper foil substrate;

[0023] Compare the number of carbon dots in the graphene with the preset standard number of carbon dots;

[0024] If the number of carbon dots in the graphene is less than the preset standard number of carbon dots, then the graphene on the target copper foil substrate at the current moment will be used as the target optimized graphene.

[0025] Optionally, it also includes:

[0026] If the reaction temperature is less than the preset standard temperature threshold, then a heating operation is started on the target preparation device until the reaction temperature is greater than or equal to the preset standard temperature threshold.

[0027] Optionally, it also includes:

[0028] If the atmosphere volume ratio is less than the preset standard volume ratio threshold, then a pressurization operation is initiated on the target preparation device until the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold.

[0029] Optionally, it also includes:

[0030] If the reaction time is less than the preset standard reaction time threshold, then the reaction time extension operation is initiated on the target preparation device until the reaction time is greater than or equal to the preset standard reaction time threshold.

[0031] Optionally, it also includes:

[0032] If the number of graphene layers is greater than or equal to the preset standard number of layers, then proceed to the step of comparing the atmosphere volume ratio with the preset standard volume ratio threshold.

[0033] Optionally, it also includes:

[0034] If the number of graphene carbon dots is greater than or equal to the preset standard number of carbon dots, then proceed to the step of comparing the reaction temperature value with the preset standard temperature threshold.

[0035] Optionally, it also includes:

[0036] The conductivity of the target copper foil substrate associated with the optimized graphene was measured using the van der Berg method to obtain the target conductivity.

[0037] The quality grade of the target optimized graphene is determined based on the preset conductivity grading range in which the target conductivity is located.

[0038] A second aspect of the present invention provides an optimized system for the preparation of graphene, comprising:

[0039] A response module is used to respond to a fabrication optimization request for the target fabrication apparatus and to determine the target copper foil substrate within the target fabrication apparatus.

[0040] The defect detection module is used to perform defect detection on the target copper foil substrate using a preset detection method to obtain detection indicators;

[0041] An optimization preparation module is used to optimize the preparation of graphene on the target copper foil substrate by adopting a preset optimization strategy when the detection index does not meet the preset standard index conditions, so as to obtain the target optimized graphene.

[0042] A third aspect of the present invention provides an electronic device, including a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor causes the processor to perform the steps of the graphene preparation optimization method as described in any of the preceding claims.

[0043] The fourth aspect of the present invention provides a computer-readable storage medium having a computer program stored thereon, wherein the computer program, when executed, implements the optimized method for preparing graphene as described in any of the preceding claims.

[0044] The fifth aspect of the present invention provides a computer program product comprising a computer program stored on a non-transitory computer-readable storage medium, the computer program comprising program instructions, wherein, when the program instructions are executed by a computer, the computer performs the graphene preparation optimization method as described in any of the preceding claims.

[0045] As can be seen from the above technical solutions, the present invention has the following advantages:

[0046] In this invention, in response to a request for optimization of the preparation of the target preparation device, the target copper foil substrate within the target preparation device is determined. A preset detection method is used to detect defects in the graphene on the target copper foil substrate, obtaining detection indicators. If the detection indicators do not meet the preset standard indicator conditions, a preset optimization strategy is used to optimize the preparation of the graphene on the target copper foil substrate, resulting in optimized target graphene. This invention uses a preset detection method to detect defects in the graphene at the current moment. When the detection indicators of the graphene do not meet the preset standard indicator conditions, a preset optimization strategy is used to adjust the preparation conditions during the graphene preparation process of the target preparation device, thereby obtaining high-quality graphene. This solves the technical problem of how to prepare high-quality graphene. Attached Figure Description

[0047] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0048] Figure 1 This is a flowchart illustrating the steps of an optimized method for preparing graphene according to Embodiment 1 of the present invention.

[0049] Figure 2 This is a flowchart illustrating the steps of an optimized method for preparing graphene according to Embodiment 2 of the present invention.

[0050] Figure 3 This is a schematic diagram of the structure of a graphene preparation device provided by the present invention;

[0051] Figure 4 This is an optical micrograph obtained using the optical micrograph observation method;

[0052] Figure 5The Raman spectrum was obtained using Raman spectroscopy.

[0053] Figure 6 A flowchart illustrating the preset optimization strategy;

[0054] Figure 7 This is a structural block diagram of an optimized system for preparing graphene provided in Embodiment 3 of the present invention;

[0055] Figure 8 This is a structural block diagram of a computer device provided in Embodiment 4 of the present invention. Detailed Implementation

[0056] This invention provides an optimized method and system for preparing graphene, which addresses the technical problem of how to prepare high-quality graphene.

[0057] To make the objectives, features, and advantages of this invention more apparent and understandable, the technical solutions of the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described below are only some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0058] Please see Figure 1 , Figure 1 This is a flowchart illustrating the steps of an optimized method for preparing graphene according to Embodiment 1 of the present invention.

[0059] The present invention provides an optimized method for preparing graphene, comprising:

[0060] Step 101: In response to the request for optimization of the preparation of the target preparation apparatus, determine the target copper foil substrate within the target preparation apparatus.

[0061] The target preparation device refers to the graphene preparation device used to prepare graphene.

[0062] A preparation optimization request refers to a request instruction message for optimizing the preparation of graphene using a target preparation device.

[0063] The target copper foil substrate refers to the copper foil substrate used to prepare graphene within the target preparation device.

[0064] In this embodiment of the invention, in response to receiving a request instruction to optimize the preparation of graphene in the target preparation device, a target copper foil substrate for preparing graphene is determined within the target preparation device.

[0065] Step 102: Use a preset detection method to perform defect detection on the target copper foil substrate and obtain the detection indicators.

[0066] Preset detection method refers to a detection method used to detect defects in graphene on a target copper foil substrate.

[0067] The detection index refers to the detection result obtained by performing defect detection according to a preset detection method.

[0068] In this embodiment of the invention, a preset detection method is used to detect defects in graphene on the target copper foil substrate, and detection indicators of graphene on the target copper foil substrate are generated based on the detection results.

[0069] Step 103: When the detection index does not meet the preset standard index conditions, the graphene on the target copper foil substrate is optimized using a preset optimization strategy to obtain the target optimized graphene.

[0070] In this embodiment of the invention, when the detection index of the graphene being prepared by the target preparation device does not meet the preset standard index conditions, a preset optimization strategy is adopted to adjust the preparation conditions in the process of preparing graphene by the target preparation device, so as to obtain high-quality target optimized graphene by the target preparation device.

[0071] In this invention, in response to a request for optimization of the preparation of the target preparation device, the target copper foil substrate within the target preparation device is determined. A preset detection method is used to detect defects in the graphene on the target copper foil substrate, obtaining detection indicators. If the detection indicators do not meet the preset standard indicator conditions, a preset optimization strategy is used to optimize the preparation of the graphene on the target copper foil substrate, resulting in optimized target graphene. This invention uses a preset detection method to detect defects in the graphene at the current moment. When the detection indicators of the graphene do not meet the preset standard indicator conditions, a preset optimization strategy is used to adjust the preparation conditions during the graphene preparation process of the target preparation device, thereby obtaining high-quality graphene. This solves the technical problem of how to prepare high-quality graphene.

[0072] Please see Figure 2 , Figure 2 This is a flowchart illustrating the steps of an optimized method for preparing graphene, as provided in Embodiment 2 of the present invention.

[0073] The present invention provides an optimized method for preparing graphene, comprising:

[0074] Please see Figure 3 , Figure 3 This is a schematic diagram of a graphene preparation device provided by the present invention, which is used in the graphene preparation optimization method of the present invention. The graphene preparation device includes a heating system, a gas supply system, a growth reactor, a graphene detection module, and a controller.

[0075] The heating system is connected to the growth reactor via a connecting pipe. The growth reactor is used to place the target copper foil substrate.

[0076] The heating system is a tube furnace, a commonly used temperature control device in graphene preparation. The working principle of a tube furnace is based on Joule heating, where heat is generated by an electric current passing through a resistance wire. The structure of a tube furnace includes a furnace body, furnace tubes, heating elements (resistance wires), a temperature sensor, and a temperature controller.

[0077] Heating elements are distributed around the furnace tube. When current passes through the resistance wire, the wire heats up and transfers the heat to the reaction zone inside the furnace tube. A temperature sensor (a thermocouple) monitors the temperature inside the furnace tube in real time and feeds the temperature signal back to the temperature controller. The temperature controller compares the set temperature value with the actual temperature value and then adjusts the current of the heating elements to precisely control the reaction temperature inside the furnace tube.

[0078] The furnace tube is connected to the connecting pipe, which transfers the heat generated by the heating element to the growth reactor to heat the target copper foil substrate placed in the growth reactor, so as to ensure that carbon source gases such as methane decompose and deposit on the substrate to form high-quality graphene.

[0079] The gas supply system is connected to the growth reactor via connecting pipes;

[0080] The gas supply system is responsible for supplying reactant gases and carrier gases to the reaction chamber. Reactant gases such as methane are carbon sources, providing carbon atoms for the formation of graphene; hydrogen is usually used as a reducing gas, which can remove impurities such as oxides from the substrate surface, and also helps to regulate the reaction process.

[0081] The gas supply system includes gas storage cylinders and gas flow controllers. The gas flow controllers can precisely regulate the flow rate of each gas, for example, controlling the flow rate of methane to tens of milliliters per minute and the flow rate of hydrogen to hundreds of milliliters per minute, to ensure that the reaction proceeds according to the predetermined stoichiometric ratio.

[0082] Gas storage cylinders are used to store methane and transfer the stored methane to the growth reactor through connecting pipes to provide methane gas to the target copper foil substrate in the growth reactor;

[0083] The growth reactor is equipped with a temperature sensor and a gas combination sensor. The temperature sensor is used to measure the reaction temperature inside the growth reactor.

[0084] The gas combination sensor includes a methane sensor, a hydrogen sensor, and a processor;

[0085] Both the methane sensor and the hydrogen sensor are connected to the processor;

[0086] The methane sensor is used to measure the methane concentration within the growth reactor;

[0087] The hydrogen sensor is used to measure the hydrogen concentration inside the growth reactor;

[0088] The processor receives the methane and hydrogen concentrations and performs calculations to obtain the volume ratio of methane to hydrogen in the atmosphere.

[0089] The heating system, gas supply system, growth reactor, temperature sensor, gas combination sensor, and graphene detection module are all connected to the controller;

[0090] The graphene detection module and growth reactor are used to detect defects in the graphene on the target copper foil substrate using a preset detection method, obtain the detection indicators, and transmit them to the controller.

[0091] The controller is used to control the heating system to start the heating operation of the target preparation device;

[0092] It is also used to control the gas supply system to initiate pressurization operations on the target preparation device;

[0093] The controller is equipped with a timer that starts timing when the reaction temperature in the growth reactor reaches a preset standard temperature threshold. The reaction time is obtained based on the timing result. The start time of the reaction time is when the reaction temperature is greater than or equal to the preset standard temperature threshold, and the end time is when the reaction temperature is less than the preset standard temperature threshold.

[0094] It is also used to control the opening and closing of the control valve on the connecting pipe between the heating system and the growth reactor according to the reaction time;

[0095] When the reaction time is less than the preset standard reaction time threshold, the reaction time extension operation is initiated on the target preparation device. That is, the control valve on the control connection pipe is opened, and the heating system continuously delivers heat to the growth reactor, so that the reaction temperature value is continuously greater than or equal to the preset standard temperature threshold, and the current reaction temperature value is maintained until the reaction time is greater than or equal to the preset standard reaction time threshold.

[0096] Step 201: In response to the request for optimization of the preparation of the target preparation device, determine the target copper foil substrate within the target preparation device.

[0097] In this embodiment of the invention, the specific implementation process of step 201 is similar to that of step 101, and will not be repeated here.

[0098] Step 202: Use a preset detection method to perform defect detection on the target copper foil substrate and obtain the detection indicators.

[0099] Furthermore, the preset detection method includes optical microscopy and Raman spectroscopy, and step 202 may include the following sub-steps:

[0100] S11. Defect detection of graphene on the target copper foil substrate was performed using optical microscopy to obtain carbon dot detection indicators.

[0101] It should be noted that the carbon dot detection index refers to the number of carbon dots on the graphene surface.

[0102] Please see Figure 4 , Figure 4 This is an optical micrograph obtained using the optical micrograph observation method.

[0103] It should be noted that since graphene is prepared on the target copper foil substrate, the graphene and the target copper foil substrate are a composite. Therefore, the optical micrograph obtained by the optical micrograph observation method is the optical micrograph of the composite formed by the graphene and the target copper foil substrate.

[0104] In this embodiment of the invention, the optical microscopy method is used to detect defects in the target copper foil substrate, and an optical microscopy image of the target copper foil substrate is obtained. By analyzing the optical microscopy image, the number of carbon dots on the target copper foil substrate and the graphene surface can be obtained.

[0105] S12. Defect detection of graphene on the target copper foil substrate was performed using Raman spectroscopy to obtain defect peak detection indicators.

[0106] Please see Figure 5 , Figure 5 The image shows the Raman spectrum obtained using Raman spectroscopy.

[0107] The G, D, and 2D peaks of graphene were observed using Raman spectroscopy.

[0108] Among them, the G peak is the main characteristic peak of graphene, caused by the in-plane vibration of sp2 carbon atoms, and appears at 1580 cm⁻¹. -1 The peak near the laser wavelength is the D peak, which effectively reflects the number of graphene layers. The D peak is the disorder vibration peak of graphene, and its specific position is related to the laser wavelength. It is caused by lattice vibrations leaving the center of the Brillouin zone and is used to characterize structural defects or edges in graphene samples. The 2D peak is the second-order Raman peak of two-phonon resonance and is used to characterize the interlayer stacking mode of carbon atoms in graphene samples.

[0109] In this embodiment of the invention, Raman spectroscopy is used to detect defects in graphene on the target copper foil substrate. Based on the Raman spectrum, it can be determined whether there are structural defects or edges in the graphene. If they exist, they are recorded as 1, and if they do not exist, they are recorded as 0, thereby generating a defect peak detection index.

[0110] Furthermore, the preset standard index conditions are that the carbon dot detection index is less than the preset carbon dot detection threshold and the defect peak detection index is less than the preset defect peak detection threshold.

[0111] It should be noted that the preset standard index conditions are that the carbon dot detection index is less than the preset carbon dot detection threshold and the defect peak detection index is less than the preset defect peak detection threshold. The preset carbon dot detection threshold and the preset defect peak detection threshold are both 1, which can be understood as the composite formed by graphene and the target copper foil substrate having no defect peaks and no carbon dots on the surface.

[0112] Furthermore, when the detection indicators meet the preset standard conditions, the graphene on the target copper foil substrate at the current moment is taken as the target optimized graphene.

[0113] It should be noted that when the detection indicators meet the preset standard conditions, it indicates that the graphene on the target copper foil substrate is high-quality graphene, and no preparation optimization is required. The graphene at the current moment can be used as the target optimized graphene.

[0114] Step 203: When the detection index does not meet the preset standard index conditions, the graphene on the target copper foil substrate is optimized and prepared using a preset optimization strategy to obtain the target optimized graphene.

[0115] Please see Figure 6 , Figure 6 A flowchart illustrating the preset optimization strategy;

[0116] Furthermore, step 203 may include the following sub-steps:

[0117] S21. When the detection index does not meet the preset standard index conditions, the reaction temperature value of the target preparation device at the current moment is obtained.

[0118] In this embodiment of the invention, when the detection index does not meet the preset standard index conditions, the reaction temperature value of the target preparation device at the current moment is obtained.

[0119] S22. Compare the reaction temperature value with the preset standard temperature threshold.

[0120] It should be noted that, according to experiments, the best quality graphene is obtained when the reaction temperature for graphene preparation is greater than or equal to 900℃. Therefore, the preferred preset standard temperature threshold here is 900℃.

[0121] In this embodiment of the invention, the reaction temperature value is compared with a preset standard temperature threshold.

[0122] S23. If the reaction temperature is greater than or equal to the preset standard temperature threshold, then obtain the atmosphere volume ratio of the target preparation device at the current moment.

[0123] In this embodiment of the invention, if the reaction temperature value is greater than or equal to a preset standard temperature threshold, the atmosphere volume ratio of the target preparation device at the current moment is obtained.

[0124] The atmosphere volume ratio here refers to the atmosphere volume ratio of methane to hydrogen.

[0125] S24. If the reaction temperature is less than the preset standard temperature threshold, start the heating operation on the target preparation device until the reaction temperature is greater than or equal to the preset standard temperature threshold.

[0126] In this embodiment of the invention, if the reaction temperature is less than a preset standard temperature threshold, the heating system in the target preparation device is controlled to start the heating operation until the reaction temperature is greater than or equal to the preset standard temperature threshold, then the process jumps to the step of obtaining the atmosphere volume ratio of the target preparation device at the current moment.

[0127] S25. Compare the atmosphere volume ratio with the preset standard volume ratio threshold.

[0128] It should be noted that the preset standard volume ratio threshold is preferably 9.

[0129] In this embodiment of the invention, the atmosphere volume ratio is compared with a preset standard volume ratio threshold.

[0130] S26. If the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold, then obtain the reaction time of the target preparation device at the current moment.

[0131] It should be noted that the reaction time refers to the duration during which the reaction temperature in the current growth reactor is maintained at or above 900°C.

[0132] In this embodiment of the invention, if the atmosphere volume ratio is greater than or equal to a preset standard volume ratio threshold, the reaction time of the target preparation device at the current moment is obtained.

[0133] S27. If the atmosphere volume ratio is less than the preset standard volume ratio threshold, then start the pressurization operation on the target preparation device until the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold.

[0134] In this embodiment of the invention, if the atmosphere volume ratio is less than a preset standard volume ratio threshold, the gas supply system in the target preparation device is controlled to apply methane gas to the growth reactor until the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold, and then the process jumps to the step of obtaining the reaction time of the target preparation device at the current moment.

[0135] S28. Compare the reaction time with the preset standard reaction time threshold.

[0136] It should be noted that the preset standard reaction time threshold is preferably 10 hours.

[0137] In this embodiment of the invention, the reaction time is compared with a preset standard reaction time threshold.

[0138] S29. If the reaction time is greater than or equal to the preset standard reaction time threshold, then obtain the number of graphene layers on the target copper foil substrate.

[0139] In this embodiment of the invention, if the reaction time is greater than or equal to a preset standard reaction time threshold, the number of graphene layers on the target copper foil substrate is determined by Raman spectroscopy. It is worth mentioning that the number of graphene layers on the target copper foil substrate can also be determined by any one of optical microscopy, atomic force microscopy, transmission electron microscopy and transmission electron microscopy.

[0140] S210. If the reaction time is less than the preset standard reaction time threshold, then initiate the reaction time extension operation on the target preparation device until the reaction time is greater than or equal to the preset standard reaction time threshold.

[0141] In this embodiment of the invention, if the reaction time is less than a preset standard reaction time threshold, the reaction time extension operation is initiated on the target preparation device, that is, the heating system is controlled to continuously heat so that the reaction temperature in the growth reactor is maintained at greater than or equal to 900°C and the reaction time is maintained for 10 hours, then the process jumps to the step of obtaining the number of graphene layers on the target copper foil substrate.

[0142] S211. Compare the number of graphene layers with the preset standard number of layers.

[0143] It should be noted that the preset standard number of layers is preferably 2.

[0144] In this embodiment of the invention, the number of graphene layers is compared with a preset standard number of layers.

[0145] S212. If the number of graphene layers is less than the preset standard number of layers, then obtain the number of graphene carbon dots on the target copper foil substrate.

[0146] In this embodiment of the invention, if the number of graphene layers is less than the preset standard number of layers, the number of graphene carbon dots on the target copper foil substrate is obtained, which is obtained by optical microscopy observation.

[0147] S213. If the number of graphene layers is greater than or equal to the preset standard number of layers, then proceed to the step of comparing the volume ratio of the atmosphere with the preset standard volume ratio threshold.

[0148] In this embodiment of the invention, if the number of graphene layers is greater than or equal to the preset standard number of layers, the process jumps to the step of comparing the atmosphere volume ratio with the preset standard volume ratio threshold.

[0149] S214. Compare the number of graphene carbon dots with the preset standard number of carbon dots.

[0150] It should be noted that the preset standard number of carbon points is preferably 2.

[0151] In this embodiment of the invention, the number of carbon dots in graphene is compared with the number of carbon dots in a preset standard.

[0152] S215. If the number of carbon dots in the graphene is less than the preset standard number of carbon dots, then the graphene on the target copper foil substrate at the current moment will be used as the target optimized graphene.

[0153] In this embodiment of the invention, if the number of carbon dots in the graphene is less than the preset standard number of carbon dots, then the graphene on the target copper foil substrate at the current moment is taken as the target optimized graphene.

[0154] S216. If the number of graphene carbon dots is greater than or equal to the preset standard number of carbon dots, then proceed to the step of comparing the reaction temperature value with the preset standard temperature threshold.

[0155] In this embodiment of the invention, if the number of graphene carbon dots is greater than or equal to the preset standard number of carbon dots, the process jumps to the step of comparing the reaction temperature value with the preset standard temperature threshold.

[0156] Step 204: The conductivity of the target copper foil substrate associated with the target optimized graphene is measured using the van der Burg method to obtain the target conductivity.

[0157] In this embodiment of the invention, the conductivity of the target copper foil substrate associated with the target optimized graphene is measured using the van der Burg method. That is, the copper material (graphene / copper) is cut into standard size 2×2 cm², and the conductivity of the copper foil substrate is tested using the van der Burg method based on the thickness parameter, converting the resistance measured by the van der Burg method into conductivity.

[0158] Step 205: Determine the quality grade of the target optimized graphene based on the preset conductivity grading range in which the target conductivity is located.

[0159] Furthermore, the preset conductivity grading intervals include a first preset conductivity grading interval, a second preset conductivity grading interval, a third preset conductivity grading interval, a fourth preset conductivity grading interval, and a fifth preset conductivity grading interval. Step 205 may include the following sub-steps:

[0160] S31. When the target conductivity is within the first preset conductivity grading range, the target optimized graphene is determined to be Grade A graphene.

[0161] S32. When the target conductivity is within the second preset conductivity grading range, the target optimized graphene is determined to be grade B graphene.

[0162] S33. When the target conductivity is within the third preset conductivity grading range, the target optimized graphene is determined to be grade C graphene.

[0163] S34. When the target conductivity is within the fourth preset conductivity classification range, the target optimized graphene is determined to be grade D graphene.

[0164] S35. When the target conductivity is within the fifth preset conductivity grading range, the target optimized graphene is determined to be Grade E graphene.

[0165] In this embodiment of the invention, the preset conductivity grading intervals are divided into five intervals: a first preset conductivity grading interval, a second preset conductivity grading interval, a third preset conductivity grading interval, a fourth preset conductivity grading interval, and a fifth preset conductivity grading interval. The preset conductivity grading intervals are divided according to the International Annealed Copper Standard (IACS), using the conductivity of annealed pure copper as the benchmark relative conductivity standard. The intervals are divided with a gradient of 1.5% IACS greater than the conductivity of pure copper. For example, if the conductivity of pure copper is 100% IACS, then 101.5% IACS is used as an interval to divide different intervals. The first interval is from 100% IACS to 101.5% IACS, and the next interval is from 101.5% IACS to 103% IACS. The height of each step is 1.5% IACS. The conductivity value range is divided into different intervals. The first preset conductivity grading interval is [100% IACS, 101.5% IACS], the second preset conductivity grading interval is (101.5% IACS, 103% IACS], the third preset conductivity grading interval is (103% IACS, 104.5% IACS], the fourth preset conductivity grading interval is (104.5% IACS, 106% IACS], and the fifth preset conductivity grading interval is (106% IACS, 107.5% IACS]. Among them, E-grade graphene has the highest quality.

[0166] In this invention, in response to a request for optimization of the preparation of the target preparation device, the target copper foil substrate within the target preparation device is determined. A preset detection method is used to detect defects in the graphene on the target copper foil substrate, obtaining detection indicators. If the detection indicators do not meet the preset standard indicator conditions, a preset optimization strategy is used to optimize the preparation of the graphene on the target copper foil substrate, resulting in optimized target graphene. This invention uses a preset detection method to detect defects in the graphene at the current moment. When the detection indicators of the graphene do not meet the preset standard indicator conditions, a preset optimization strategy is used to adjust the preparation conditions during the graphene preparation process of the target preparation device, thereby obtaining high-quality graphene. This solves the technical problem of how to prepare high-quality graphene.

[0167] Please see Figure 7 , Figure 7This is a structural block diagram of an optimized system for preparing graphene provided in Embodiment 3 of the present invention.

[0168] The present invention provides an optimized system for the preparation of graphene, comprising:

[0169] Response module 301 is used to respond to the fabrication optimization request of the target fabrication apparatus and determine the target copper foil substrate within the target fabrication apparatus;

[0170] Defect detection module 302 is used to perform defect detection on the target copper foil substrate using a preset detection method to obtain detection indicators;

[0171] The optimization preparation module 303 is used to optimize the preparation of graphene on the target copper foil substrate by adopting a preset optimization strategy when the detection index does not meet the preset standard index conditions, so as to obtain the target optimized graphene.

[0172] Furthermore, the preset detection methods include optical microscopy and Raman spectroscopy, and the defect detection module 302 includes:

[0173] The carbon dot detection index submodule is used to detect defects in graphene on the target copper foil substrate using optical microscopy to obtain carbon dot detection indexes.

[0174] The defect peak detection index submodule is used to detect defects in graphene on the target copper foil substrate using Raman spectroscopy, and obtain the defect peak detection index.

[0175] Furthermore, the preset standard index conditions are that the carbon dot detection index is less than the preset carbon dot detection threshold and the defect peak detection index is less than the preset defect peak detection threshold.

[0176] Furthermore, the optimized preparation module 303 includes:

[0177] The reaction temperature value submodule is used to obtain the reaction temperature value of the target preparation device at the current moment when the detection index does not meet the preset standard index conditions.

[0178] The temperature comparison submodule is used to compare the reaction temperature value with the preset standard temperature threshold.

[0179] The atmosphere volume ratio submodule is used to obtain the atmosphere volume ratio of the target preparation device at the current moment if the reaction temperature value is greater than or equal to a preset standard temperature threshold.

[0180] The volume comparison submodule is used to compare the atmosphere volume ratio with a preset standard volume ratio threshold.

[0181] The reaction time submodule is used to obtain the reaction time of the target preparation device at the current moment if the atmosphere volume ratio is greater than or equal to a preset standard volume ratio threshold.

[0182] The reaction time comparison submodule is used to compare the reaction time with a preset standard reaction time threshold.

[0183] The graphene layer count submodule is used to obtain the number of graphene layers on the target copper foil substrate if the reaction time is greater than or equal to a preset standard reaction time threshold.

[0184] The layer count comparison submodule is used to compare the number of graphene layers with the preset standard number of layers;

[0185] The graphene carbon dot counting submodule is used to obtain the number of graphene carbon dots on the target copper foil substrate if the number of graphene layers is less than the preset standard number of layers.

[0186] The carbon dot count comparison submodule is used to compare the number of carbon dots in graphene with the preset standard number of carbon dots.

[0187] The target optimized graphene output submodule is used to select the graphene on the target copper foil substrate at the current moment as the target optimized graphene if the number of graphene carbon dots is less than the preset standard number of carbon dots.

[0188] Furthermore, the optimized preparation module 303 also includes:

[0189] The first processing submodule is used to start a heating operation on the target preparation device if the reaction temperature is less than the preset standard temperature threshold, until the reaction temperature is greater than or equal to the preset standard temperature threshold.

[0190] Furthermore, the optimized preparation module 303 also includes:

[0191] The second processing submodule is used to initiate a pressurization operation on the target preparation device if the atmosphere volume ratio is less than the preset standard volume ratio threshold, until the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold.

[0192] Furthermore, the optimized preparation module 303 also includes:

[0193] The third processing submodule is used to initiate a reaction time extension operation on the target preparation device if the reaction time is less than the preset standard reaction time threshold, until the reaction time is greater than or equal to the preset standard reaction time threshold.

[0194] Furthermore, the optimized preparation module 303 also includes:

[0195] The fourth processing submodule is used to jump to the step of comparing the atmosphere volume ratio with the preset standard volume ratio threshold if the number of graphene layers is greater than or equal to the preset standard number of layers.

[0196] Furthermore, the optimized preparation module 303 also includes:

[0197] The fifth processing submodule is used to jump to the step of comparing the reaction temperature value with the preset standard temperature threshold if the number of graphene carbon dots is greater than or equal to the preset standard carbon dot number.

[0198] Furthermore, it also includes:

[0199] The target conductivity module is used to measure the conductivity of the target copper foil substrate associated with the optimized graphene using the van der Burg method to obtain the target conductivity.

[0200] The quality grade module is used to determine the quality grade of the target optimized graphene based on the preset conductivity grading range in which the target conductivity falls.

[0201] In this invention, in response to a request for optimization of the preparation of the target preparation device, the target copper foil substrate within the target preparation device is determined. A preset detection method is used to detect defects in the graphene on the target copper foil substrate, obtaining detection indicators. If the detection indicators do not meet the preset standard indicator conditions, a preset optimization strategy is used to optimize the preparation of the graphene on the target copper foil substrate, resulting in optimized target graphene. This invention uses a preset detection method to detect defects in the graphene at the current moment. When the detection indicators of the graphene do not meet the preset standard indicator conditions, a preset optimization strategy is used to adjust the preparation conditions during the graphene preparation process of the target preparation device, thereby obtaining high-quality graphene. This solves the technical problem of how to prepare high-quality graphene.

[0202] Please see Figure 8 , Figure 8 This is a structural block diagram of a computer device provided in Embodiment 4 of the present invention.

[0203] An electronic device according to an embodiment of the present invention includes: a memory 401 and a processor 402. The memory 402 stores a computer program. When the computer program is executed by the processor 402, the processor 402 performs the graphene preparation optimization method as described in any of the above embodiments.

[0204] Memory 401 may be an electronic memory such as flash memory, EEPROM (Electrically Erasable Programmable Read-Only Memory), EPROM, hard disk, or ROM. Memory 401 has storage space 403 for program code 413 for performing any of the method steps described above. For example, storage space 403 for program code may include individual program codes 413 for implementing the various steps in the methods described above. This program code may be read from or written to one or more computer program products. These computer program products include program code carriers such as hard disks, CDs, memory cards, or floppy disks. The program code may be compressed, for example, in a suitable form. When run by a computing processing device, this code causes the computing processing device to perform the various steps in the methods described above. This program code may be read from or written to one or more computer program products. These computer program products include program code carriers such as hard disks, CDs, memory cards, or floppy disks. The program code may be compressed, for example, in a suitable form. When this code is run by a computing device, it causes the device to perform the various steps in the optimized method for preparing graphene described above.

[0205] Embodiment 5 of the present invention also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the graphene preparation optimization method as described in any of the above embodiments.

[0206] Embodiment 6 of the present invention also provides a computer program product, which includes a computer program stored on a non-transitory computer-readable storage medium. The computer program includes program instructions, wherein when the program instructions are executed by a computer, the computer performs the graphene preparation optimization method as described in any of the above embodiments.

[0207] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0208] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces, or indirect coupling or communication connection between apparatuses or units, and may be electrical, mechanical, or other forms.

[0209] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0210] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0211] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0212] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An optimized method for preparing graphene, characterized in that, include: In response to a request for optimization of the fabrication of the target fabrication apparatus, the target copper foil substrate within the target fabrication apparatus is determined; Defect detection was performed on the graphene on the target copper foil substrate using a preset detection method to obtain detection indicators; The preset detection method includes optical microscopy and Raman spectroscopy. The preset detection method is used to detect defects in the graphene on the target copper foil substrate, yielding detection indicators, including: The graphene on the target copper foil substrate was subjected to defect detection using the optical microscopy observation method, and carbon dot detection index was obtained. The Raman spectroscopy method was used to detect defects in the graphene on the target copper foil substrate, and the defect peak detection index was obtained. When the detection index does not meet the preset standard index conditions, a preset optimization strategy is used to optimize the preparation of graphene on the target copper foil substrate to obtain the target optimized graphene, including: When the detection index does not meet the preset standard index conditions, the reaction temperature value of the target preparation device at the current time is obtained; Compare the reaction temperature value with a preset standard temperature threshold; If the reaction temperature value is greater than or equal to the preset standard temperature threshold, then the atmosphere volume ratio of the target preparation device at the current moment is obtained; Compare the atmosphere volume ratio with a preset standard volume ratio threshold; If the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold, then the reaction time of the target preparation device at the current moment is obtained; Compare the reaction time with a preset standard reaction time threshold; If the reaction time is greater than or equal to the preset standard reaction time threshold, then the number of graphene layers on the target copper foil substrate is obtained. Compare the number of graphene layers with the preset standard number of layers; If the number of graphene layers is less than the preset standard number of layers, then obtain the number of graphene carbon dots on the target copper foil substrate; Compare the number of carbon dots in the graphene with the preset standard number of carbon dots; If the number of carbon dots in the graphene is less than the preset standard number of carbon dots, then the graphene on the target copper foil substrate at the current moment will be used as the target optimized graphene. Also includes: The conductivity of the target copper foil substrate associated with the optimized graphene was measured using the van der Berg method to obtain the target conductivity. The quality grade of the target optimized graphene is determined based on the preset conductivity grading range in which the target conductivity is located.

2. The optimized method for preparing graphene according to claim 1, characterized in that, The preset standard index conditions are that the carbon dot detection index is less than the preset carbon dot detection threshold and the defect peak detection index is less than the preset defect peak detection threshold.

3. The optimized method for preparing graphene according to claim 1, characterized in that, Also includes: If the reaction temperature is less than the preset standard temperature threshold, then a heating operation is started on the target preparation device until the reaction temperature is greater than or equal to the preset standard temperature threshold.

4. The optimized method for preparing graphene according to claim 1, characterized in that, Also includes: If the atmosphere volume ratio is less than the preset standard volume ratio threshold, then a pressurization operation is initiated on the target preparation device until the atmosphere volume ratio is greater than or equal to the preset standard volume ratio threshold.

5. The optimized method for preparing graphene according to claim 1, characterized in that, Also includes: If the reaction time is less than the preset standard reaction time threshold, then the reaction time extension operation is initiated on the target preparation device until the reaction time is greater than or equal to the preset standard reaction time threshold.

6. The optimized method for preparing graphene according to claim 1, characterized in that, Also includes: If the number of graphene layers is greater than or equal to the preset standard number of layers, then proceed to the step of comparing the atmosphere volume ratio with the preset standard volume ratio threshold.

7. The optimized method for preparing graphene according to claim 1, characterized in that, Also includes: If the number of graphene carbon dots is greater than or equal to the preset standard number of carbon dots, then proceed to the step of comparing the reaction temperature value with the preset standard temperature threshold.

8. An optimized system for the preparation of graphene, characterized in that, The graphene preparation optimization system is used to implement the graphene preparation optimization method according to any one of claims 1-7, wherein the graphene preparation optimization system comprises: A response module is used to respond to a fabrication optimization request for the target fabrication apparatus and to determine the target copper foil substrate within the target fabrication apparatus. The defect detection module is used to perform defect detection on the graphene on the target copper foil substrate using a preset detection method to obtain detection indicators; An optimization preparation module is used to optimize the preparation of graphene on the target copper foil substrate by adopting a preset optimization strategy when the detection index does not meet the preset standard index conditions, so as to obtain the target optimized graphene.

9. An electronic device, characterized in that, The method includes a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor causes the processor to perform the steps of the graphene preparation optimization method as described in any one of claims 1-7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed, it implements the optimized method for preparing graphene as described in any one of claims 1-7.

11. A computer program product, characterized in that, The computer program product includes a computer program stored on a non-transitory computer-readable storage medium, the computer program including program instructions, wherein when the program instructions are executed by a computer, the computer performs the optimized method for the preparation of graphene as described in any one of claims 1-7.

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