Method and system for monitoring high-power MOS (Metal Oxide Semiconductor) transistor

Abstract

The embodiment of the invention discloses a high-power MOS (Metal Oxide Semiconductor) transistor monitoring method and system, which are applied to electronic equipment, the electronic equipment comprises a high-power MOS transistor, and the method comprises the following steps: acquiring a target working mode of the electronic equipment; determining a normal working parameter range of the high-power MOS tube in the target working mode; the normal working parameter range comprises an upper limit threshold parameter and a lower limit threshold parameter; the upper limit threshold parameter is greater than the lower limit threshold parameter; working parameters of the high-power MOS tube are obtained every preset time interval, and m working parameters are obtained; m is a positive integer; the m working parameters are compared with the normal working parameter range, n abnormal working parameters are obtained, and n is a positive integer smaller than or equal to m; and performing anomaly detection according to the n abnormal working parameters to obtain a target anomaly detection result.

Description

Technical Field

[0001] The present application relates to the field of electronic technology, and in particular to a high-power MOS tube monitoring method and system. Background Art

[0002] In practical applications, high-power MOS tubes mainly refer to MOS tubes that can withstand larger currents and voltages. Usually, high-power MOS tubes have higher power density and better heat dissipation performance, thus meeting the needs of high-power electronic equipment. At present, the monitoring of high-power MOS tubes is not intelligent enough, resulting in low monitoring efficiency of high-power MOS tubes. Therefore, how to improve the monitoring intelligence of high-power MOS tubes to ensure the monitoring efficiency of high-power MOS tubes needs to be solved urgently. Summary of the invention

[0003] The embodiments of the present application provide a high-power MOS tube monitoring method and system, which can improve the monitoring intelligence of the high-power MOS tube to ensure the monitoring efficiency of the high-power MOS tube.

[0004] In a first aspect, an embodiment of the present application provides a high-power MOS tube monitoring method, which is applied to an electronic device, wherein the electronic device includes a high-power MOS tube, and the method includes:

[0005] Acquire a target operating mode of the electronic device;

[0006] Determine a normal working parameter range of the high-power MOS tube under the target working mode; the normal working parameter range includes an upper threshold parameter and a lower threshold parameter; the upper threshold parameter is greater than the lower threshold parameter;

[0007] Obtaining the operating parameters of the high-power MOS tube at every preset time interval to obtain m operating parameters; m is a positive integer;

[0008] Compare the m working parameters with the normal working parameter range to obtain n abnormal working parameters, where n is a positive integer less than or equal to m;

[0009] Anomaly detection is performed according to the n abnormal operating parameters to obtain a target anomaly detection result.

[0010] In a second aspect, an embodiment of the present application provides a high-power MOS tube monitoring system, which is applied to an electronic device, wherein the electronic device includes a high-power MOS tube, and the system includes: an acquisition unit, a determination unit, a comparison unit, and an abnormality detection unit, wherein:

[0011] The acquisition unit is used to acquire the target operating mode of the electronic device;

[0012] The determination unit is used to determine the normal working parameter range of the high-power MOS tube under the target working mode; the normal working parameter range includes an upper threshold parameter and a lower threshold parameter; the upper threshold parameter is greater than the lower threshold parameter;

[0013] The acquisition unit is further used to acquire the operating parameters of the high-power MOS tube at preset time intervals to obtain m operating parameters; m is a positive integer;

[0014] The comparison unit is used to compare the m working parameters with the normal working parameter range to obtain n abnormal working parameters, where n is a positive integer less than or equal to m;

[0015] The abnormality detection unit is used to perform abnormality detection according to the n abnormal working parameters to obtain a target abnormality detection result.

[0016] In a third aspect, an embodiment of the present application provides an electronic device, comprising a processor, a memory, a communication interface, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the processor, and the program includes instructions for executing the steps in the first aspect of the embodiment of the present application.

[0017] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program for electronic data exchange, wherein the computer program enables a computer to execute part or all of the steps described in the first aspect of the embodiment of the present application.

[0018] In a fifth aspect, an embodiment of the present application provides a computer program product, wherein the computer program product includes a non-transitory computer-readable storage medium storing a computer program, and the computer program is operable to cause a computer to execute some or all of the steps described in the first aspect of the embodiment of the present application. The computer program product may be a software installation package.

[0019] The implementation of the embodiments of the present application has the following beneficial effects:

[0020] It can be seen that the high-power MOS tube monitoring method and system described in the embodiment of the present application are applied to electronic equipment, the electronic equipment includes a high-power MOS tube, the target working mode of the electronic equipment is obtained, and the normal working parameter range of the high-power MOS tube under the target working mode is determined; the normal working parameter range includes an upper threshold parameter and a lower threshold parameter; the upper threshold parameter is greater than the lower threshold parameter, and the working parameters of the high-power MOS tube are obtained at preset time intervals to obtain m working parameters; m is a positive integer, and the m working parameters are compared with the normal working parameter range to obtain n abnormal working parameters, and n is a positive integer less than or equal to m. Abnormal detection is performed according to the n abnormal working parameters to obtain a target abnormal detection result. First, the normal working parameter range of the corresponding high-power MOS tube can be adapted based on different working modes, thereby improving the monitoring accuracy of the high-power MOS tube. Second, the collected working parameters can be compared with the normal working parameter range to screen out the corresponding abnormal working parameters, and then abnormal detection is performed based on the abnormal working parameters within a period of time. In this way, accurate abnormal detection is achieved, thereby improving the monitoring intelligence of the high-power MOS tube to ensure the monitoring efficiency of the high-power MOS tube. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0022] Figure 1 It is a flow chart of a high-power MOS tube monitoring method provided in an embodiment of the present application;

[0023] Figure 2 It is a schematic diagram showing a deviation fitting provided in an embodiment of the present application;

[0024] Figure 3 It is a structural schematic diagram of an electronic device provided in an embodiment of the present application;

[0025] Figure 4 This is a block diagram of the functional units of a high-power MOS tube monitoring system provided in an embodiment of the present application. DETAILED DESCRIPTION

[0026] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0027] The terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally includes steps or units that are not listed, or optionally includes other steps or units inherent to these processes, methods, products or devices.

[0028] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0029] In the related art, the monitoring of high-power MOS tubes is not intelligent enough, resulting in low monitoring efficiency of the high-power MOS tubes. In order to solve the defects in the related art, the embodiment of the present application provides a high-power MOS tube monitoring method, which is applied to an electronic device, wherein the electronic device includes a high-power MOS tube. The high-power MOS tube monitoring method includes the following steps:

[0030] Acquire a target operating mode of the electronic device;

[0031] Determine a normal working parameter range of the high-power MOS tube under the target working mode; the normal working parameter range includes an upper threshold parameter and a lower threshold parameter; the upper threshold parameter is greater than the lower threshold parameter;

[0032] Obtaining the operating parameters of the high-power MOS tube at every preset time interval to obtain m operating parameters; m is a positive integer;

[0033] Compare the m working parameters with the normal working parameter range to obtain n abnormal working parameters, where n is a positive integer less than or equal to m;

[0034] Anomaly detection is performed according to the n abnormal operating parameters to obtain a target anomaly detection result.

[0035] It can be seen that, firstly, the normal working parameter range of the corresponding high-power MOS tube can be adapted based on different working modes, thereby improving the monitoring accuracy of the high-power MOS tube. Secondly, the collected working parameters can be compared with the normal working parameter range to screen out the corresponding abnormal working parameters, and then abnormal detection can be performed based on the abnormal working parameters within a period of time. In this way, accurate abnormality detection can be achieved, thereby improving the monitoring intelligence of the high-power MOS tube to ensure the monitoring efficiency of the high-power MOS tube.

[0036] The embodiments of the present application are described in detail below.

[0037] See also Figure 1 , Figure 1 This is a flow chart of a high-power MOS tube monitoring method provided by an embodiment of the present application. As shown in the figure, it is applied to an electronic device, and the electronic device includes a high-power MOS tube. The high-power MOS tube monitoring method includes:

[0038] 101. Obtain a target operating mode of the electronic device.

[0039] In the embodiment of the present application, different working modes of the electronic device will require different parameter ranges of the high-power MOS tube, so the target working mode of the electronic device can be obtained.

[0040] 102. Determine a normal working parameter range of the high-power MOS tube in the target working mode; the normal working parameter range includes an upper threshold parameter and a lower threshold parameter; the upper threshold parameter is greater than the lower threshold parameter.

[0041] In the embodiment of the present application, a mapping relationship between a preset working mode and a normal working parameter range of a high-power MOS tube can be pre-stored, and then, the normal working parameter range of the high-power MOS tube under the target working mode can be determined based on the mapping relationship.

[0042] The normal working parameter range may include an upper threshold parameter and a lower threshold parameter, and the upper threshold parameter is greater than the lower threshold parameter.

[0043] 103. Obtain the operating parameters of the high-power MOS tube at every preset time interval to obtain m operating parameters, where m is a positive integer.

[0044] The preset time interval may be preset or set by system default. Different working modes may correspond to different time intervals.

[0045] In the embodiment of the present application, the operating parameters of the high-power MOS tube can be obtained at preset time intervals to obtain m operating parameters; m is a positive integer. The operating parameters of the high-power MOS tube may include at least one of the following: the operating current of at least one endpoint, the operating voltage of at least one endpoint, the operating power of at least one endpoint, etc., which are not limited here.

[0046] 104. Compare the m working parameters with the normal working parameter range to obtain n abnormal working parameters, where n is a positive integer less than or equal to m.

[0047] The abnormal working parameters are working parameters that are not within the normal working parameter range.

[0048] In the embodiment of the present application, each of the m working parameters can be compared with the normal working parameter range to obtain n abnormal working parameters, where n is a positive integer less than or equal to m.

[0049] 105. Perform anomaly detection according to the n abnormal working parameters to obtain a target anomaly detection result.

[0050] In the embodiment of the present application, anomaly detection can be performed based on n abnormal operating parameters to obtain a target anomaly detection result, which reflects the degree of abnormality of the high-power MOS tube to a certain extent.

[0051] In some possible examples, the above step 105, performing anomaly detection according to the n abnormal working parameters to obtain a target anomaly detection result, may include the following steps:

[0052] 51. Determine the deviation between each of the n abnormal operating parameters and the normal operating parameter range to obtain n deviations;

[0053] 52. Obtain a time point corresponding to each of the n deviations to obtain n time points;

[0054] 53. Perform fitting according to the n deviations and the n time points to obtain a fitting curve and a fitting straight line, wherein the horizontal axis of the fitting curve and the fitting straight line is time and the vertical axis is the deviation;

[0055] 54. Obtain a first deviation reference line and a second deviation reference line, wherein the first deviation reference line and the second deviation reference line are both balanced on the horizontal axis;

[0056] 55. Determine a target intersection point between the first deviation reference line and the second deviation reference line and the fitting straight line, wherein the target time point corresponding to the target intersection point is greater than 0;

[0057] 56. intercepting a portion of the fitting curve between the minimum value of the n time points in the fitting curve and the target time point to obtain a fitting curve segment;

[0058] 57. Obtain the minimum value and the maximum value of the fitting curve segment, and determine the target mean square error and the maximum deviation amplitude according to the minimum value and the maximum value;

[0059] 58. Determine the target anomaly detection result according to the target mean square error and the maximum deviation amplitude.

[0060] In an embodiment of the present application, the degree of deviation between each of the n abnormal operating parameters and the normal operating parameter range can be determined to obtain n degrees of deviation. Specifically, when the abnormal operating parameter is greater than the upper threshold parameter, the degree of deviation = (abnormal operating parameter - upper threshold parameter) / (upper threshold parameter + lower threshold parameter); when the abnormal operating parameter is less than the lower threshold parameter, the degree of deviation = (abnormal operating parameter - lower threshold parameter) / (upper threshold parameter + lower threshold parameter).

[0061] In the specific implementation, since each abnormal working parameter corresponds to a sampling time point and each deviation also corresponds to a sampling time point, the time point corresponding to each of the n deviations can be obtained to obtain n time points, and then fitting is performed based on the n deviations and n time points to obtain a fitting curve and a fitting straight line. The horizontal axis of the fitting curve and the fitting straight line is time and the vertical axis is the deviation, that is, each deviation and the corresponding time point can be regarded as a coordinate point. In this way, n deviations and n time points can obtain n coordinate points, and the n coordinate points are mapped to a coordinate system, the horizontal axis of the coordinate system is time and the vertical axis is the deviation.

[0062] Among them, the first deviation reference line and the second deviation reference line can be preset or system default, both of which can be empirical values. The first deviation reference line can correspond to the upper threshold parameter, and the second deviation reference line can correspond to the lower threshold parameter.

[0063] Furthermore, a first deviation reference line and a second deviation reference line can be obtained, both of which are balanced on the horizontal axis, and then a target intersection point between any one of the first deviation reference line and the second deviation reference line and the fitting straight line is determined, and the target time point corresponding to the target intersection point is greater than 0, for example, Figure 2 As shown, o represents a dot, the x-axis represents time, and the y-axis represents deviation. The fitting straight line can intersect with the first deviation reference line to obtain a target intersection point. The target time point can be understood as an abnormal warning time point. At this time point, it means that the high-power MOS tube is likely to be abnormal or has already been abnormal.

[0064] Next, a portion of the fitting curve between the minimum value of the n time points in the fitting curve and the target time point can be intercepted to obtain a fitting curve segment, and then the minimum and maximum values ​​of the fitting curve segment are obtained. The number of minimum values ​​can be one or more, and the number of maximum values ​​can be one or more. The target mean square error and the maximum deviation amplitude are determined according to the minimum and maximum values. The mean square error reflects the working stability of the high-power MOS tube, and the maximum deviation amplitude reflects the abnormal degree of the maximum deviation amplitude to a certain extent, that is, only when the abnormal situation occurs or is about to occur, the deviation amplitude is large. Then, the target abnormal detection result is determined according to the target mean square error and the maximum deviation amplitude. In this way, firstly, the abnormal warning time point can be predicted based on the change in the deviation degree of the abnormal working parameter, and then the working stability and abnormal degree of the high-power MOS tube are analyzed based on the minimum and maximum values ​​of the fitting curve segment between the abnormal warning time point and the corresponding earliest working parameter time point, and then the abnormal detection result is determined based on the working stability and abnormal degree of the high-power MOS tube. In this way, accurate abnormal detection can be achieved, thereby improving the monitoring intelligence of the high-power MOS tube to ensure the monitoring efficiency of the high-power MOS tube.

[0065] In some possible examples, the target abnormality detection result includes a target abnormality degree value; the above step 58, determining the target abnormality detection result according to the target mean square error and the maximum deviation amplitude, may include the following steps:

[0066] 581. Determine a reference abnormality degree value according to the maximum deviation amplitude;

[0067] 582. Determine a target adjustment parameter corresponding to the target mean square error;

[0068] 583. Adjust the reference abnormality level value according to the target adjustment parameter to obtain a first abnormality level value;

[0069] 584. Count the number of the minimum values ​​and the maximum values;

[0070] 585. Determine the duration between the minimum value of the n time points and the target time point;

[0071] 586. Determine a target abnormal frequency according to the quantity and the duration;

[0072] 587. Determine a first fine-tuning parameter corresponding to the target abnormal frequency;

[0073] 588. Obtain a target slope corresponding to the fitting straight line;

[0074] 589. Determine a second fine-tuning parameter corresponding to the target slope;

[0075] 5810. Fine-tune the first abnormality level value according to the first fine-tuning parameter and the second fine-tuning parameter to obtain the target abnormality level value.

[0076] In an embodiment of the present application, the target abnormality detection result includes a target abnormality degree value, which reflects the abnormality degree to a certain extent. The mapping relationship between the preset deviation amplitude and the abnormality degree value can be pre-stored, and then the reference abnormality degree value corresponding to the maximum deviation amplitude is determined according to the mapping relationship. The mapping relationship between the preset mean square error and the adjustment parameter can also be pre-stored. Then, the target adjustment parameter corresponding to the target mean square error can be determined based on the mapping relationship. The mean square error reflects the working stability of the high-power MOS tube. The reference abnormality degree value is adjusted according to the target adjustment parameter to obtain a first abnormality degree value, the first abnormality degree value = (1 + target adjustment parameter) * reference abnormality degree value. The reference abnormality degree value is dynamically optimized based on the working stability of the high-power MOS tube, which can improve the stability of abnormality detection and ensure the accuracy of abnormality detection.

[0077] Next, the number of minimum values ​​and maximum values ​​can be counted, and then the duration between the minimum value among the n time points and the target time point can be determined. The duration = target time point - minimum value among the n time points. The target abnormal frequency is determined according to the number and duration. The target abnormal frequency = number / duration. The target abnormal frequency also reflects the working stability of the high-power MOS tube to a certain extent. The larger the target abnormal frequency, the worse the working stability, and vice versa.

[0078] Furthermore, a mapping relationship between a preset abnormal frequency and a fine-tuning parameter can be stored in advance, and a first fine-tuning parameter corresponding to a target abnormal frequency can be determined based on the mapping relationship. A target slope corresponding to a fitting straight line can also be obtained, and the target slope reflects the degree of abnormal change trend of a high-power MOS tube. A mapping relationship between a preset slope and a fine-tuning parameter can also be stored in advance, and a second fine-tuning parameter corresponding to the target slope can be determined based on the mapping relationship. The first abnormal degree value can be fine-tuned based on the first fine-tuning parameter and the second fine-tuning parameter to obtain a target abnormal degree value, that is, the target abnormal degree value = (1 + first fine-tuning parameter) * (1 + second fine-tuning parameter) * first abnormal degree value. On the one hand, from the macro At the macro level, the reference abnormality degree value corresponding to the maximum deviation amplitude is determined. The mean square error of the extreme value reflects the working stability of the high-power MOS tube. The reference abnormality degree value is dynamically optimized based on the working stability of the high-power MOS tube, which can improve the stability of abnormality detection and ensure the accuracy of abnormality detection. On the other hand, at the micro level, the abnormal frequency is further determined by using the statistical law of the extreme value. The abnormal frequency also reflects the working stability of the high-power MOS tube to a certain extent. The abnormality degree value is deeply optimized by using the working stability of the high-power MOS tube and the abnormal change trend of the high-power MOS tube, which can further improve the monitoring intelligence of the high-power MOS tube to ensure the monitoring efficiency of the high-power MOS tube.

[0079] In some possible examples, the following steps may also be included:

[0080] A1. When the target abnormality level value is less than a preset abnormality level value, determining a target feedback adjustment parameter corresponding to the target abnormality level value;

[0081] A2. Obtaining the current operating parameters of the high-power MOS tube;

[0082] A3. Feedback-adjust the current operating parameter according to the target feedback adjustment parameter to obtain the target operating parameter.

[0083] The preset abnormality degree value may be preset or set by system default.

[0084] In an embodiment of the present application, when the target abnormality degree value is less than the preset abnormality degree value, it means that the abnormality degree is not serious, and the mapping relationship between the preset abnormality degree value and the feedback adjustment parameter can be pre-stored, and then the target feedback adjustment parameter corresponding to the target abnormality degree value can be determined based on the mapping relationship, and the current working parameter of the high-power MOS tube can be obtained, and then the current working parameter is feedback-adjusted according to the target feedback adjustment parameter to obtain the target working parameter, that is, the target working parameter = (1 + target feedback adjustment parameter) * current working parameter. In this way, when the abnormality degree is not serious, the feedback adjustment parameter corresponding to the abnormality degree can be adapted to realize feedback adjustment of the working parameter of the high-power MOS tube, so that the working parameter after feedback adjustment can fall into the normal parameter range, thereby ensuring the working stability and safety of the high-power MOS tube, and also improving the monitoring intelligence of the high-power MOS tube to ensure the monitoring efficiency of the high-power MOS tube.

[0085] In some possible examples, the following steps may also be included:

[0086] B1. When the target abnormality level value is greater than or equal to a preset abnormality level value, determining a target early warning operation parameter corresponding to the target abnormality level value;

[0087] B2. Execute corresponding warning operations according to the target warning operation parameters.

[0088] The target warning operation parameters may include at least one of the following: power-off operation, abnormal level, replacement of MOS tube, abnormal warning mode, etc., which are not limited here. The abnormal warning mode may include at least one of the following: voice alarm, light reminder, vibration reminder, etc., which are not limited here.

[0089] In a specific implementation, when the target abnormality degree value is greater than or equal to the preset abnormality degree value, it means that the abnormality is more serious. The mapping relationship between the preset abnormality degree value and the warning operation parameter can be pre-stored, and the target warning operation parameter corresponding to the target abnormality degree value can be determined based on the mapping relationship, and then the corresponding warning operation is performed according to the target warning operation parameter. In this way, when the abnormality is more serious, the corresponding warning operation parameters are dynamically configured based on the abnormality degree, thereby ensuring the warning efficiency and accuracy, and thus, the monitoring intelligence of the high-power MOS tube can be improved to ensure the monitoring efficiency of the high-power MOS tube.

[0090] It can be seen that the high-power MOS tube monitoring method described in the embodiment of the present application is applied to an electronic device, the electronic device includes a high-power MOS tube, a target working mode of the electronic device is obtained, and a normal working parameter range of the high-power MOS tube under the target working mode is determined; the normal working parameter range includes an upper threshold parameter and a lower threshold parameter; the upper threshold parameter is greater than the lower threshold parameter, and the working parameters of the high-power MOS tube are obtained at preset time intervals to obtain m working parameters; m is a positive integer, and the m working parameters are compared with the normal working parameter range to obtain n abnormal working parameters, and n is a positive integer less than or equal to m. Abnormal detection is performed according to the n abnormal working parameters to obtain a target abnormal detection result. First, the normal working parameter range of the corresponding high-power MOS tube can be adapted based on different working modes, thereby improving the monitoring accuracy of the high-power MOS tube. Second, the collected working parameters can be compared with the normal working parameter range to screen out the corresponding abnormal working parameters, and then abnormal detection is performed based on the abnormal working parameters within a period of time. In this way, accurate abnormal detection is achieved, thereby improving the monitoring intelligence of the high-power MOS tube to ensure the monitoring efficiency of the high-power MOS tube.

[0091] In accordance with the above embodiment, please refer to Figure 3 , Figure 3 : is a structural schematic diagram of an electronic device provided in an embodiment of the present application. As shown in the figure, the electronic device includes a processor, a memory, a communication interface, and one or more programs. The one or more programs are stored in the memory and are configured to be executed by the processor. In the embodiment of the present application, the electronic device includes a high-power MOS tube, and the program includes instructions for executing the following steps:

[0092] Acquire a target operating mode of the electronic device;

[0093] Determine a normal working parameter range of the high-power MOS tube under the target working mode; the normal working parameter range includes an upper threshold parameter and a lower threshold parameter; the upper threshold parameter is greater than the lower threshold parameter;

[0094] Obtaining the operating parameters of the high-power MOS tube at every preset time interval to obtain m operating parameters; m is a positive integer;

[0095] Compare the m working parameters with the normal working parameter range to obtain n abnormal working parameters, where n is a positive integer less than or equal to m;

[0096] Anomaly detection is performed according to the n abnormal operating parameters to obtain a target anomaly detection result.

[0097] In some possible examples, in terms of performing anomaly detection according to the n abnormal operating parameters to obtain a target anomaly detection result, the program includes instructions for executing the following steps:

[0098] Determine the deviation between each of the n abnormal operating parameters and the normal operating parameter range to obtain n deviations;

[0099] Obtaining a time point corresponding to each of the n deviations to obtain n time points;

[0100] Perform fitting according to the n deviations and the n time points to obtain a fitting curve and a fitting straight line, wherein the horizontal axis of the fitting curve and the fitting straight line is time and the vertical axis is the deviation;

[0101] Acquire a first deviation reference line and a second deviation reference line, wherein the first deviation reference line and the second deviation reference line are both balanced on the horizontal axis;

[0102] Determine a target intersection point between the fitting straight line and any one of the first deviation reference line and the second deviation reference line, wherein the target time point corresponding to the target intersection point is greater than 0;

[0103] intercepting a portion of the fitting curve between the minimum value of the n time points in the fitting curve and the target time point to obtain a fitting curve segment;

[0104] Obtaining the minimum value and the maximum value of the fitting curve segment, and determining the target mean square error and the maximum deviation amplitude according to the minimum value and the maximum value;

[0105] The target anomaly detection result is determined according to the target mean square error and the maximum deviation amplitude.

[0106] In some possible examples, the target abnormality detection result includes a target abnormality degree value; in determining the target abnormality detection result according to the target mean square error and the maximum deviation amplitude, the program includes instructions for performing the following steps:

[0107] Determine a reference abnormality degree value according to the maximum deviation amplitude;

[0108] Determining a target adjustment parameter corresponding to the target mean square error;

[0109] Adjusting the reference abnormality level value according to the target adjustment parameter to obtain a first abnormality level value;

[0110] Counting the number of the minimum values ​​and the maximum values;

[0111] Determine the duration between the minimum value of the n time points and the target time point;

[0112] Determine a target abnormal frequency according to the quantity and the duration;

[0113] determining a first fine-tuning parameter corresponding to the target abnormal frequency;

[0114] Obtaining a target slope corresponding to the fitting straight line;

[0115] determining a second fine-tuning parameter corresponding to the target slope;

[0116] The first abnormality level value is fine-tuned according to the first fine-tuning parameter and the second fine-tuning parameter to obtain the target abnormality level value.

[0117] In some possible examples, the above program also includes instructions for performing the following steps:

[0118] When the target abnormality level value is less than a preset abnormality level value, determining a target feedback adjustment parameter corresponding to the target abnormality level value;

[0119] Obtaining current operating parameters of the high-power MOS tube;

[0120] Feedback adjustment is performed on the current operating parameter according to the target feedback adjustment parameter to obtain the target operating parameter.

[0121] In some possible examples, the above program also includes instructions for performing the following steps:

[0122] When the target abnormality level value is greater than or equal to the preset abnormality level value, determining a target early warning operation parameter corresponding to the target abnormality level value;

[0123] Execute corresponding warning operations according to the target warning operation parameters.

[0124] It can be seen that the electronic device described in the embodiment of the present application includes a high-power MOS tube, a target working mode of the electronic device is obtained, and a normal working parameter range of the high-power MOS tube under the target working mode is determined; the normal working parameter range includes an upper threshold parameter and a lower threshold parameter; the upper threshold parameter is greater than the lower threshold parameter, and the working parameters of the high-power MOS tube are obtained at preset time intervals to obtain m working parameters; m is a positive integer, and the m working parameters are compared with the normal working parameter range to obtain n abnormal working parameters, where n is a positive integer less than or equal to m, and abnormality detection is performed according to the n abnormal working parameters to obtain a target abnormality detection result. First, the normal working parameter range of the corresponding high-power MOS tube can be adapted based on different working modes, thereby improving the monitoring accuracy of the high-power MOS tube. Second, the collected working parameters can be compared with the normal working parameter range to screen out the corresponding abnormal working parameters, and then abnormality detection is performed based on the abnormal working parameters within a period of time. In this way, accurate abnormality detection is achieved, thereby improving the monitoring intelligence of the high-power MOS tube to ensure the monitoring efficiency of the high-power MOS tube.

[0125] Figure 4 4 is a functional unit block diagram of a high-power MOS tube monitoring system 400 involved in an embodiment of the present application. The high-power MOS tube monitoring system 400 is applied to an electronic device, and the electronic device includes a high-power MOS tube. The high-power MOS tube monitoring system 400 includes: an acquisition unit 401, a determination unit 402, a comparison unit 403 and an abnormality detection unit 404, wherein:

[0126] The acquisition unit 401 is used to acquire the target operating mode of the electronic device;

[0127] The determination unit 402 is used to determine the normal working parameter range of the high-power MOS tube under the target working mode; the normal working parameter range includes an upper threshold parameter and a lower threshold parameter; the upper threshold parameter is greater than the lower threshold parameter;

[0128] The acquisition unit 401 is further configured to acquire the operating parameters of the high-power MOS tube at preset time intervals to obtain m operating parameters; m is a positive integer;

[0129] The comparison unit 403 is used to compare the m working parameters with the normal working parameter range to obtain n abnormal working parameters, where n is a positive integer less than or equal to m;

[0130] The abnormality detection unit 404 is used to perform abnormality detection according to the n abnormal operating parameters to obtain a target abnormality detection result.

[0131] In some possible examples, in performing anomaly detection according to the n abnormal operating parameters to obtain a target anomaly detection result, the anomaly detection unit 404 is specifically used to:

[0132] Determine the deviation between each of the n abnormal operating parameters and the normal operating parameter range to obtain n deviations;

[0133] Obtaining a time point corresponding to each of the n deviations to obtain n time points;

[0134] Perform fitting according to the n deviations and the n time points to obtain a fitting curve and a fitting straight line, wherein the horizontal axis of the fitting curve and the fitting straight line is time and the vertical axis is the deviation;

[0135] Acquire a first deviation reference line and a second deviation reference line, wherein the first deviation reference line and the second deviation reference line are both balanced on the horizontal axis;

[0136] Determine a target intersection point between the fitting straight line and any one of the first deviation reference line and the second deviation reference line, wherein the target time point corresponding to the target intersection point is greater than 0;

[0137] intercepting a portion of the fitting curve between the minimum value of the n time points in the fitting curve and the target time point to obtain a fitting curve segment;

[0138] Obtaining the minimum value and the maximum value of the fitting curve segment, and determining the target mean square error and the maximum deviation amplitude according to the minimum value and the maximum value;

[0139] The target anomaly detection result is determined according to the target mean square error and the maximum deviation amplitude.

[0140] In some possible examples, the target abnormality detection result includes a target abnormality degree value; in determining the target abnormality detection result according to the target mean square error and the maximum deviation amplitude, the abnormality detection unit 404 is specifically used to:

[0141] Determine a reference abnormality degree value according to the maximum deviation amplitude;

[0142] Determining a target adjustment parameter corresponding to the target mean square error;

[0143] Adjusting the reference abnormality level value according to the target adjustment parameter to obtain a first abnormality level value;

[0144] Counting the number of the minimum values ​​and the maximum values;

[0145] Determine the duration between the minimum value of the n time points and the target time point;

[0146] Determine a target abnormal frequency according to the quantity and the duration;

[0147] determining a first fine-tuning parameter corresponding to the target abnormal frequency;

[0148] Obtaining a target slope corresponding to the fitting straight line;

[0149] determining a second fine-tuning parameter corresponding to the target slope;

[0150] The first abnormality level value is fine-tuned according to the first fine-tuning parameter and the second fine-tuning parameter to obtain the target abnormality level value.

[0151] In some possible examples, the high-power MOS tube monitoring system 400 is also specifically used for:

[0152] When the target abnormality level value is less than a preset abnormality level value, determining a target feedback adjustment parameter corresponding to the target abnormality level value;

[0153] Obtaining current operating parameters of the high-power MOS tube;

[0154] Feedback adjustment is performed on the current operating parameter according to the target feedback adjustment parameter to obtain the target operating parameter.

[0155] In some possible examples, the high-power MOS tube monitoring system 400 is also specifically used for:

[0156] When the target abnormality level value is greater than or equal to a preset abnormality level value, determining a target early warning operation parameter corresponding to the target abnormality level value;

[0157] Execute corresponding warning operations according to the target warning operation parameters.

[0158] It can be seen that the high-power MOS tube monitoring system described in the embodiment of the present application is applied to an electronic device, the electronic device includes a high-power MOS tube, the target working mode of the electronic device is obtained, and the normal working parameter range of the high-power MOS tube under the target working mode is determined; the normal working parameter range includes an upper threshold parameter and a lower threshold parameter; the upper threshold parameter is greater than the lower threshold parameter, and the working parameters of the high-power MOS tube are obtained at preset time intervals to obtain m working parameters; m is a positive integer, and the m working parameters are compared with the normal working parameter range to obtain n abnormal working parameters, and n is a positive integer less than or equal to m. Abnormal detection is performed according to the n abnormal working parameters to obtain a target abnormal detection result. First, the normal working parameter range of the corresponding high-power MOS tube can be adapted based on different working modes, thereby improving the monitoring accuracy of the high-power MOS tube. Second, the collected working parameters can be compared with the normal working parameter range to screen out the corresponding abnormal working parameters, and then abnormal detection is performed based on the abnormal working parameters within a period of time. In this way, accurate abnormal detection is achieved, thereby improving the monitoring intelligence of the high-power MOS tube to ensure the monitoring efficiency of the high-power MOS tube.

[0159] It can be understood that the functions of each program module of the high-power MOS tube monitoring system of this embodiment can be specifically implemented according to the method in the above method embodiment. The specific implementation process can refer to the relevant description of the above method embodiment, which will not be repeated here.

[0160] An embodiment of the present application also provides a computer storage medium, wherein the computer storage medium stores a computer program for electronic data exchange, and the computer program enables a computer to execute part or all of the steps of any method recorded in the above method embodiments.

[0161] The present application also provides a computer program product, which includes a non-transitory computer-readable storage medium storing a computer program, and the computer program is operable to cause a computer to execute some or all of the steps of any method described in the above method embodiment. The computer program product may be a software installation package.

[0162] It should be noted that, for the aforementioned method embodiments, for the sake of simplicity, they are all expressed as a series of action combinations, but those skilled in the art should be aware that the present application is not limited by the described order of actions, because according to the present application, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the present application.

[0163] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0164] In the several embodiments provided in the present application, it should be understood that the disclosed device can be implemented in other ways. For example, the device embodiments described above are only schematic, such as the division of the above-mentioned units, which is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, and the indirect coupling or communication connection of devices or units can be electrical or other forms.

[0165] The units described above as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0166] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0167] If the above-mentioned integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable memory. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or all or part of the technical solution can be embodied in the form of a software product, and the computer software product is stored in a memory, including a number of instructions to enable a computer device (which can be a personal computer, server or network device, etc.) to perform all or part of the steps of the above-mentioned methods of each embodiment of the present application. The aforementioned memory includes: U disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), mobile hard disk, disk or CD-ROM and other media that can store program codes.

[0168] A person skilled in the art can understand that all or part of the steps in the various methods of the above embodiments can be completed by instructing related hardware through a program, and the program can be stored in a computer-readable memory, and the memory can include: a flash drive, a read-only memory (English: Read-Only Memory, abbreviated as: ROM), a random access memory (English: Random Access Memory, abbreviated as: RAM), a magnetic disk or an optical disk, etc.

[0169] The embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for general technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A high-power MOS tube monitoring method, characterized in that: Applied to electronic equipment, the electronic equipment includes a high-power MOS tube, and the method includes: Acquire a target operating mode of the electronic device; Determine a normal working parameter range of the high-power MOS tube under the target working mode; the normal working parameter range includes an upper threshold parameter and a lower threshold parameter; the upper threshold parameter is greater than the lower threshold parameter; Obtaining the operating parameters of the high-power MOS tube at every preset time interval to obtain m operating parameters; m is a positive integer; Compare the m working parameters with the normal working parameter range to obtain n abnormal working parameters, where n is a positive integer less than or equal to m; Anomaly detection is performed according to the n abnormal operating parameters to obtain a target anomaly detection result.

2. The method according to claim 1, characterized in that The performing abnormality detection according to the n abnormal working parameters to obtain a target abnormality detection result includes: Determine the deviation between each of the n abnormal operating parameters and the normal operating parameter range to obtain n deviations; Obtaining a time point corresponding to each of the n deviations to obtain n time points; Perform fitting according to the n deviations and the n time points to obtain a fitting curve and a fitting straight line, wherein the horizontal axis of the fitting curve and the fitting straight line is time and the vertical axis is the deviation; Acquire a first deviation reference line and a second deviation reference line, wherein the first deviation reference line and the second deviation reference line are both balanced on the horizontal axis; Determine a target intersection point between the fitting straight line and any one of the first deviation reference line and the second deviation reference line, wherein the target time point corresponding to the target intersection point is greater than 0; intercepting a portion of the fitting curve between the minimum value of the n time points in the fitting curve and the target time point to obtain a fitting curve segment; Obtaining the minimum value and the maximum value of the fitting curve segment, and determining the target mean square error and the maximum deviation amplitude according to the minimum value and the maximum value; The target anomaly detection result is determined according to the target mean square error and the maximum deviation amplitude.

3. The method according to claim 2, characterized in that The target abnormality detection result includes a target abnormality degree value; The determining the target abnormality detection result according to the target mean square error and the maximum deviation amplitude includes: Determine a reference abnormality degree value according to the maximum deviation amplitude; Determining a target adjustment parameter corresponding to the target mean square error; Adjusting the reference abnormality level value according to the target adjustment parameter to obtain a first abnormality level value; Counting the number of the minimum values ​​and the maximum values; Determine the duration between the minimum value of the n time points and the target time point; Determine a target abnormal frequency according to the quantity and the duration; determining a first fine-tuning parameter corresponding to the target abnormal frequency; Obtaining a target slope corresponding to the fitting straight line; determining a second fine-tuning parameter corresponding to the target slope; The first abnormality level value is fine-tuned according to the first fine-tuning parameter and the second fine-tuning parameter to obtain the target abnormality level value.

4. The method according to claim 3, characterized in that The method further comprises: When the target abnormality level value is less than a preset abnormality level value, determining a target feedback adjustment parameter corresponding to the target abnormality level value; Obtaining current operating parameters of the high-power MOS tube; Feedback adjustment is performed on the current operating parameter according to the target feedback adjustment parameter to obtain the target operating parameter.

5. The method according to claim 4, characterized in that The method further comprises: When the target abnormality level value is greater than or equal to the preset abnormality level value, determining a target early warning operation parameter corresponding to the target abnormality level value; Execute corresponding warning operations according to the target warning operation parameters.

6. A high-power MOS tube monitoring system, characterized in that: Applied to electronic equipment, the electronic equipment includes a high-power MOS tube, the system includes: an acquisition unit, a determination unit, a comparison unit and an abnormality detection unit, wherein: The acquisition unit is used to acquire the target operating mode of the electronic device; The determination unit is used to determine the normal working parameter range of the high-power MOS tube under the target working mode; the normal working parameter range includes an upper threshold parameter and a lower threshold parameter; the upper threshold parameter is greater than the lower threshold parameter; The acquisition unit is further used to acquire the operating parameters of the high-power MOS tube at preset time intervals to obtain m operating parameters; m is a positive integer; The comparison unit is used to compare the m working parameters with the normal working parameter range to obtain n abnormal working parameters, where n is a positive integer less than or equal to m; The abnormality detection unit is used to perform abnormality detection according to the n abnormal working parameters to obtain a target abnormality detection result.

7. The system according to claim 6, characterized in that In the aspect of performing abnormality detection according to the n abnormal working parameters to obtain a target abnormality detection result, the abnormality detection unit is specifically used for: Determine the deviation between each of the n abnormal operating parameters and the normal operating parameter range to obtain n deviations; Obtaining a time point corresponding to each of the n deviations to obtain n time points; Perform fitting according to the n deviations and the n time points to obtain a fitting curve and a fitting straight line, wherein the horizontal axis of the fitting curve and the fitting straight line is time and the vertical axis is the deviation; Acquire a first deviation reference line and a second deviation reference line, wherein the first deviation reference line and the second deviation reference line are both balanced on the horizontal axis; Determine a target intersection point between the fitting straight line and any one of the first deviation reference line and the second deviation reference line, wherein the target time point corresponding to the target intersection point is greater than 0; intercepting a portion of the fitting curve between the minimum value of the n time points in the fitting curve and the target time point to obtain a fitting curve segment; Obtaining the minimum value and the maximum value of the fitting curve segment, and determining the target mean square error and the maximum deviation amplitude according to the minimum value and the maximum value; The target anomaly detection result is determined according to the target mean square error and the maximum deviation amplitude.

8. The system according to claim 7, characterized in that The target abnormality detection result includes a target abnormality degree value; in determining the target abnormality detection result according to the target mean square error and the maximum deviation amplitude, the abnormality detection unit is specifically used to: Determine a reference abnormality degree value according to the maximum deviation amplitude; Determining a target adjustment parameter corresponding to the target mean square error; Adjusting the reference abnormality level value according to the target adjustment parameter to obtain a first abnormality level value; Counting the number of the minimum values ​​and the maximum values; Determine the duration between the minimum value of the n time points and the target time point; Determine a target abnormal frequency according to the quantity and the duration; determining a first fine-tuning parameter corresponding to the target abnormal frequency; Obtaining a target slope corresponding to the fitting straight line; determining a second fine-tuning parameter corresponding to the target slope; The first abnormality level value is fine-tuned according to the first fine-tuning parameter and the second fine-tuning parameter to obtain the target abnormality level value.

9. The system according to claim 8, characterized in that The system is also specifically used for: When the target abnormality level value is less than a preset abnormality level value, determining a target feedback adjustment parameter corresponding to the target abnormality level value; Obtaining current operating parameters of the high-power MOS tube; Feedback adjustment is performed on the current operating parameter according to the target feedback adjustment parameter to obtain the target operating parameter.

10. The system according to claim 9, characterized in that The system is also specifically used for: When the target abnormality level value is greater than or equal to a preset abnormality level value, determining a target early warning operation parameter corresponding to the target abnormality level value; Execute corresponding warning operations according to the target warning operation parameters.

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