Thyristor state evaluation method and device and computer equipment

Abstract

The invention relates to a thyristor state evaluation method and device and computer equipment. The method comprises the steps of determining reference reverse recovery charges of a reference thyristor according to a current curve of the reference thyristor in a target converter valve layer within reverse blocking recovery time; wherein the reference thyristor is any thyristor in the target converter valve layer; acquiring a reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors; wherein the other thyristors are thyristors except the reference thyristor in the target converter valve layer; determining target reverse recovery charges of other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charges and other turn-off voltage amplitudes; and according to the target reverse recovery charge, the thyristor states of other thyristors are evaluated. By adopting the method, the cost and the complexity can be reduced while the accuracy of state evaluation is ensured.

Description

Technical Field

[0001] The present application relates to the technical field of thyristors, and in particular to a thyristor state evaluation method, device and computer equipment. Background Art

[0002] As the core equipment of UHV DC converter station, the reliability of converter valve directly affects the stable operation of DC system. As the core equipment of converter valve, the reliability of thyristor largely determines the characteristics and performance of converter valve equipment. Thyristor status assessment is very important for guiding the operation and maintenance of converter valve and improving system reliability.

[0003] At present, the state of thyristors is mostly evaluated by measuring the reverse recovery charge of thyristors. The reverse recovery charge of thyristors of converter valves is measured by building an experimental circuit to measure a single thyristor offline. However, applying the offline measurement method directly to online measurement requires adding a current sensor to each thyristor stage, which is not only costly but also very cumbersome to operate, thereby reducing the efficiency of the thyristor state evaluation process. Summary of the invention

[0004] Based on this, it is necessary to provide a thyristor state assessment method, device and computer equipment to address the above technical problems, which can reduce costs and complexity while ensuring the accuracy of state assessment.

[0005] In a first aspect, the present application provides a thyristor state assessment method, comprising:

[0006] Determining a reference reverse recovery charge of a reference thyristor according to a current curve of the reference thyristor in the target commutation valve layer within a reverse blocking recovery time; wherein the reference thyristor is any thyristor in the target commutation valve layer;

[0007] Acquire a reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors; wherein the other thyristors are thyristors in the target commutation valve layer except the reference thyristor;

[0008] Determining target reverse recovery charges of the other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and the other turn-off voltage amplitudes;

[0009] The thyristor states of the other thyristors are evaluated according to the target reverse recovery charge.

[0010] In one embodiment, determining the reference reverse recovery charge of the reference thyristor according to the current curve of the reference thyristor in the target converter valve layer within the reverse blocking recovery time includes:

[0011] The current of the reference thyristor in the target commutation valve layer is monitored within the reverse blocking recovery time by a current sensor to obtain a current curve of the reference thyristor;

[0012] The current curve is integrated to obtain a reference reverse recovery charge of the reference thyristor.

[0013] In one embodiment, obtaining the reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors includes:

[0014] Acquire a first reverse recovery voltage curve of the reference thyristor during a reverse blocking recovery process, and acquire a second reverse recovery voltage curve of the other thyristors during a reverse blocking recovery process;

[0015] Determining a reference turn-off voltage amplitude of the reference thyristor according to the first reverse recovery voltage curve;

[0016] According to the second reverse recovery voltage curve, other turn-off voltage amplitudes of the other thyristors are determined.

[0017] In one embodiment, determining the reference turn-off voltage amplitude of the reference thyristor according to the first reverse recovery voltage curve includes:

[0018] Determining a voltage turning point according to the slope of the first reverse recovery voltage curve;

[0019] Acquire a first voltage of the first reverse recovery voltage curve at the voltage turning point, and a second voltage of the first reverse recovery voltage curve at different preset times after the voltage turning point;

[0020] A reference turn-off voltage amplitude of the reference thyristor is determined according to the first voltage and each of the second voltages.

[0021] In one embodiment, determining the target reverse recovery charge of other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and the other turn-off voltage amplitudes includes:

[0022] Determining a reverse recovery charge difference between the other thyristors and the reference thyristor according to the reference turn-off voltage amplitude and the other turn-off voltage amplitudes;

[0023] The target reverse recovery charges of the other thyristors are determined according to the reverse recovery charge difference and the reference reverse recovery charge.

[0024] In one embodiment, determining the reverse recovery charge difference between the other thyristors and the reference thyristor according to the reference turn-off voltage amplitude and the other turn-off voltage amplitudes includes:

[0025] For each other thyristor, taking the difference between the other turn-off voltage amplitude of the other thyristor and the reference turn-off voltage amplitude of the reference thyristor as the turn-off voltage difference between the other thyristor and the reference thyristor;

[0026] The product of the turn-off voltage difference corresponding to the other thyristors and the damping capacitance is used as the reverse recovery charge difference of the other thyristors.

[0027] In one embodiment, the evaluating the thyristor states of the other thyristors according to the target reverse recovery charge comprises:

[0028] For any other thyristor, obtaining a rated reverse recovery charge of the other thyristor under rated working conditions;

[0029] For any other thyristor, obtaining a reverse recovery charge curve of the other thyristor;

[0030] Determine a normalization coefficient corresponding to the other thyristors according to a reverse recovery charge curve and a rated current of the other thyristors and a current current of the other thyristors under a current working condition;

[0031] Determining, according to the target reverse recovery charge of the other thyristors and the normalization coefficient, an equivalent charge value of the other thyristors converted from a current operating condition to a rated operating condition;

[0032] The thyristor states of the other thyristors are evaluated according to the equivalent charge value.

[0033] In one embodiment, the evaluating the thyristor state of the other thyristors according to the equivalent charge value includes:

[0034] taking the difference between the initial charge value of the other thyristor before use and the equivalent charge value as the charge degradation value of the other thyristor;

[0035] The thyristor states of the other thyristors are evaluated according to the charge degradation values ​​of the other thyristors.

[0036] In a second aspect, the present application further provides a thyristor state evaluation device, comprising:

[0037] A first determination module is used to determine a reference reverse recovery charge of a reference thyristor in a target converter valve layer according to a current curve of the reference thyristor in the target converter valve layer within a reverse blocking recovery time; wherein the reference thyristor is any thyristor in the target converter valve layer;

[0038] An amplitude acquisition module, used to acquire a reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors; wherein the other thyristors are thyristors in the target commutation valve layer except the reference thyristor;

[0039] A second determination module, configured to determine target reverse recovery charges of the other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and the other turn-off voltage amplitudes;

[0040] A state evaluation module is used to evaluate the thyristor states of the other thyristors according to the target reverse recovery charge.

[0041] In a third aspect, the present application further provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the following steps are implemented:

[0042] Determining a reference reverse recovery charge of a reference thyristor according to a current curve of the reference thyristor in the target commutation valve layer within a reverse blocking recovery time; wherein the reference thyristor is any thyristor in the target commutation valve layer;

[0043] Acquire a reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors; wherein the other thyristors are thyristors in the target commutation valve layer except the reference thyristor;

[0044] Determining target reverse recovery charges of the other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and the other turn-off voltage amplitudes;

[0045] The thyristor states of the other thyristors are evaluated according to the target reverse recovery charge.

[0046] In a fourth aspect, the present application further provides a computer-readable storage medium having a computer program stored thereon, wherein when the computer program is executed by a processor, the following steps are implemented:

[0047] Determining a reference reverse recovery charge of a reference thyristor according to a current curve of the reference thyristor in the target commutation valve layer within a reverse blocking recovery time; wherein the reference thyristor is any thyristor in the target commutation valve layer;

[0048] Acquire a reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors; wherein the other thyristors are thyristors in the target commutation valve layer except the reference thyristor;

[0049] Determining target reverse recovery charges of the other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and the other turn-off voltage amplitudes;

[0050] The thyristor states of the other thyristors are evaluated according to the target reverse recovery charge.

[0051] In a fifth aspect, the present application further provides a computer program product, including a computer program, which implements the following steps when executed by a processor:

[0052] Determining a reference reverse recovery charge of a reference thyristor according to a current curve of the reference thyristor in the target commutation valve layer within a reverse blocking recovery time; wherein the reference thyristor is any thyristor in the target commutation valve layer;

[0053] Acquire a reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors; wherein the other thyristors are thyristors in the target commutation valve layer except the reference thyristor;

[0054] Determining target reverse recovery charges of the other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and the other turn-off voltage amplitudes;

[0055] The thyristor states of the other thyristors are evaluated according to the target reverse recovery charge.

[0056] The above-mentioned thyristor state evaluation method, device and computer equipment select any thyristor in the target commutation valve layer as the reference thyristor, and determine the reference reverse recovery charge of the reference thyristor according to the current curve of the reference thyristor in the target commutation valve layer during the reverse blocking recovery time; further, according to the obtained reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors, and the reference reverse recovery charge, the target reverse recovery charge of other thyristors can be accurately determined; finally, according to the target reverse recovery charge, the thyristor state of other thyristors is evaluated. The above-mentioned scheme, by introducing the reference thyristor, does not need to detect the current of all thyristors, but only needs to monitor the current of one thyristor (i.e., the reference thyristor), and the reference reverse recovery charge of the reference thyristor can be accurately obtained according to the monitored current curve; further, according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes, the target reverse recovery charge of other thyristors can be accurately determined, and the state of other thyristors can be accurately evaluated based on the target reverse recovery charge, thereby reducing cost and complexity. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related technologies, the drawings required for use in the embodiments or the related technical descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0058] FIG1 is a schematic flow chart of a thyristor state evaluation method according to an embodiment;

[0059] FIG2 is a schematic diagram of a process for determining a reference reverse recovery charge in one embodiment;

[0060] FIG3 is a schematic diagram of monitoring a reference thyristor tube and other thyristor tubes of a target commutation valve layer;

[0061] FIG4 is a schematic diagram of a process for determining a reference turn-off voltage amplitude and other turn-off voltage amplitudes in one embodiment;

[0062] FIG5 is a schematic diagram of a process for determining a reference turn-off voltage amplitude in one embodiment;

[0063] FIG6 is a schematic diagram of a process for determining a target reverse recovery charge in one embodiment;

[0064] FIG7 is a schematic diagram of a process of evaluating the thyristor status of other thyristors in one embodiment;

[0065] FIG8 is a schematic diagram of a flow chart of evaluating the thyristor states of other thyristors in another embodiment;

[0066] FIG9 is a schematic flow chart of a thyristor state evaluation method in another embodiment;

[0067] FIG10 is a block diagram of a thyristor state evaluation device in one embodiment;

[0068] FIG. 11 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0069] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0070] The thyristor status evaluation method provided in the embodiment of the present application can be applied to the application environment of status evaluation of thyristors in converter valves. The thyristor status evaluation method provided in the embodiment of the present application can be executed by a computer device, which can be a server or a terminal with powerful computing capabilities.

[0071] In one embodiment, as shown in FIG1 , a thyristor state evaluation method is provided, which is described by taking the application of the method to a server as an example, and specifically includes the following steps:

[0072] S101, determining a reference reverse recovery charge of a reference thyristor according to a current curve of a reference thyristor in a target commutation valve layer within a reverse blocking recovery time.

[0073] The reference thyristor is any thyristor in the target converter valve layer. In the embodiment of the present application, the reference thyristor may be a primary thyristor in the target converter valve layer. The reverse blocking recovery time is the time from when the forward current of the thyristor passes through zero to when the reverse current decays to zero, that is, when the current direction of the thyristor suddenly changes in the on state, the thyristor returns to the off state.

[0074] The reverse recovery charge is the time and charge generated in the process of the thyristor recovering to the off state when the current direction suddenly changes when the thyristor is in the on state. The reference reverse recovery charge is the reverse recovery charge of the reference thyristor.

[0075] Optionally, the current values ​​flowing through the reference thyristor at different times can be obtained based on the current curve of the reference thyristor in the target converter valve layer within the reverse blocking recovery time; further, based on the reverse recovery charge calculation method, the reverse recovery charge of the reference thyristor is calculated according to the current values ​​flowing through the reference thyristor at different times as the reference reverse recovery charge.

[0076] S102, obtaining a reference turn-off voltage amplitude of a reference thyristor and other turn-off voltage amplitudes of other thyristors.

[0077] Among them, other thyristors are thyristors in the target converter valve layer except the reference thyristor. The tube terminal voltage is the voltage applied between the anode and cathode of the thyristor; the reference turn-off voltage is the turn-off voltage of the reference thyristor; the reference turn-off voltage amplitude is the amplitude of the reference turn-off voltage; other turn-off voltages are the turn-off voltages of other thyristors; and the other turn-off voltage amplitudes are the amplitudes of other turn-off voltages.

[0078] Optionally, the turn-off voltage of the reference thyristor and other thyristors can be monitored by a turn-off voltage monitoring device; further, the amplitude of the turn-off voltage of the reference thyristor obtained by monitoring is used as the reference turn-off voltage amplitude of the reference thyristor. At the same time, the amplitude of the turn-off voltage of other thyristors obtained by monitoring is used as the other turn-off voltage amplitudes of other thyristors.

[0079] S103, determining target reverse recovery charges of other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes.

[0080] The target reverse recovery charge is the reverse recovery charge of other thyristors.

[0081] Optionally, based on the derived functional relationship between the target reverse recovery charge of other thyristors and the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes, the target reverse recovery charge of other thyristors can be calculated according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes.

[0082] S104 , evaluating the thyristor states of other thyristors according to the target reverse recovery charge.

[0083] Optionally, the target reverse recovery charge may be input into the state evaluation model, so that the state evaluation model evaluates the states of other thyristors according to the target reverse recovery charge.

[0084] In the above thyristor state evaluation method, by selecting any thyristor in the target commutation valve layer as the reference thyristor, and according to the current curve of the reference thyristor in the target commutation valve layer during the reverse blocking recovery time, the reference reverse recovery charge of the reference thyristor is determined; further, according to the obtained reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors, and the reference reverse recovery charge, the target reverse recovery charge of other thyristors can be accurately determined; finally, according to the target reverse recovery charge, the thyristor state of other thyristors is evaluated. In the above scheme, by introducing the reference thyristor, there is no need to detect the current of all thyristors. Only the current of one thyristor (i.e., the reference thyristor) needs to be monitored, and the reference reverse recovery charge of the reference thyristor can be accurately obtained according to the monitored current curve; further, according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes, the target reverse recovery charge of other thyristors can be accurately determined, and the state of other thyristors can be accurately evaluated based on the target reverse recovery charge, thereby reducing cost and complexity.

[0085] Optionally, in one embodiment, as shown in FIG2 , a method for determining a reference reverse recovery charge is provided, which specifically includes the following steps:

[0086] S201, monitoring the current of the reference thyristor in the target commutation valve layer within the reverse blocking recovery time by means of a current sensor, and obtaining a current curve of the reference thyristor.

[0087] Optionally, as shown in FIG3 , it is a schematic diagram of monitoring the reference thyristor and other thyristors of the target commutation valve layer. As the reference thyristor; each thyristor is connected to a damping circuit; the damping circuit includes a damping capacitor and resistor .

[0088] Furthermore, by providing a current sensor to monitor the current of the reference thyristor in the target commutation valve layer, the current curve of the reference thyristor within the reverse blocking recovery time can be obtained.

[0089] S202, integrating the current curve to obtain a reference reverse recovery charge of a reference thyristor.

[0090] Optionally, the current curve may be integrated, and the value obtained by integration may be used as the reference reverse recovery charge of the reference thyristor. Specifically, the reference reverse recovery charge may be expressed by the following formula (1):

[0091] (1)

[0092] in, is the reference reverse recovery charge of the reference thyristor; is the current curve of the benchmark thyristor during the reverse blocking recovery time; is the starting time; The end time.

[0093] In this embodiment, a current sensor is provided to monitor the current curve of the reference thyristor within the reverse blocking recovery time, thereby ensuring the accuracy of the obtained current curve; further, by integrating the current curve, the reference reverse recovery charge of the reference thyristor can be accurately and quickly determined.

[0094] Optionally, in order to ensure the accuracy of the determined reference turn-off voltage amplitude and other turn-off voltage amplitudes, in one embodiment, as shown in FIG. 4 , a method for determining the reference turn-off voltage amplitude and other turn-off voltage amplitudes is provided, which specifically includes the following steps:

[0095] S401, obtaining a first reverse recovery voltage curve of a reference thyristor during a reverse blocking recovery process, and obtaining a second reverse recovery voltage curve of other thyristors during a reverse blocking recovery process.

[0096] Among them, the reverse recovery voltage represents the reverse voltage that the thyristor can withstand in the blocking state. The first reverse recovery voltage is the reverse recovery voltage of the reference thyristor; the second reverse recovery voltage is the reverse recovery voltage of other thyristors; the first reverse recovery voltage curve is the change curve of the first reverse recovery voltage during the reverse blocking recovery process; the second reverse recovery voltage curve is the change curve of the second reverse recovery voltage during the reverse blocking recovery process.

[0097] Optionally, as shown in Figure 3, the turn-off voltage of the reference thyristor and other thyristors can be monitored based on the voltage monitoring module integrated in the target converter valve layer, and the first reverse recovery voltage of the reference thyristor during the reverse blocking recovery process monitored by the voltage monitoring module can be obtained, and the second reverse recovery voltage of other thyristors during the reverse blocking recovery process can be obtained.

[0098] Furthermore, by using a drawing tool, a first reverse recovery voltage curve is obtained based on the first reverse recovery voltage; and at the same time, a second reverse recovery voltage curve is obtained based on the second reverse recovery voltage.

[0099] S402, determining a reference turn-off voltage amplitude of a reference thyristor according to a first reverse recovery voltage curve.

[0100] Optionally, the first reverse recovery voltage curve may be input into a turn-off voltage calculation module, so that the turn-off calculation module calculates a reference turn-off voltage amplitude of the reference thyristor according to the first reverse recovery voltage curve.

[0101] S403, determining other turn-off voltage amplitudes of other thyristors according to the second reverse recovery voltage curve.

[0102] Optionally, the second reverse recovery voltage curve may be input into a turn-off voltage calculation module, so that the turn-off calculation module calculates other turn-off voltage amplitudes of the reference thyristor according to the second reverse recovery voltage curve.

[0103] In this embodiment, by introducing the first reverse recovery voltage curve and the second reverse recovery voltage curve, the reference turn-off voltage amplitude and other turn-off voltage amplitudes can be accurately calculated.

[0104] Optionally, in one embodiment, as shown in FIG5 , a method for determining a reference turn-off voltage amplitude is provided, which specifically includes the following steps:

[0105] S501, determining a voltage turning point according to the slope of a first reverse recovery voltage curve.

[0106] Optionally, the moment when the slope of the first reverse recovery voltage curve changes from greater than zero to less than zero, that is, the voltage-off moment, is taken as the voltage turning point.

[0107] S502, obtaining a first voltage of the first reverse recovery voltage curve at a voltage turning point, and a second voltage of the first reverse recovery voltage curve at different preset time points after the voltage turning point.

[0108] Among them, the preset time can be determined according to actual needs; the number of different preset times can also be determined according to actual needs.

[0109] Exemplarily, the voltage of the reference thyristor at the voltage turning point can be selected as the first voltage, and the amplitude of the voltage at 100 μs, 200 μs, 300 μs, 400 μs, 500 μs, and 600 μs after the voltage turning point can be selected as the second voltage.

[0110] S503, determining a reference turn-off voltage amplitude of a reference thyristor according to the first voltage and each second voltage.

[0111] Optionally, an average value of the first voltage and each second voltage may be used as a reference turn-off voltage amplitude of the reference thyristor.

[0112] For example, if the voltage of the reference thyristor at the voltage turning point is selected as the first voltage, and the voltage at 100 μs, 200 μs, 300 μs, 400 μs, 500 μs, and 600 μs after the voltage turning point is selected as the second voltage, the reference turn-off voltage amplitude of the reference thyristor can be expressed by the following formula (2):

[0113] (2)

[0114] in, is the reference turn-off voltage amplitude of the reference thyristor; is the amplitude of the first voltage of the reference thyristor at the voltage turning point; , , , , and They are the voltage amplitudes of the reference thyristor at 100μs, 200μs, 300μs, 400μs, 500μs and 600μs after the voltage turning point, respectively.

[0115] It should be noted that other turn-off voltage amplitudes of other thyristors can be determined according to the second reverse recovery voltage curve by the same method as the above embodiment, which will not be elaborated here.

[0116] In this embodiment, by introducing a voltage turning point and based on a first voltage at the voltage turning point and a second voltage at different preset times after the voltage turning point, the accuracy of the determined reference turn-off voltage amplitude of the reference thyristor is ensured.

[0117] Optionally, in one embodiment, as shown in FIG6 , a method for determining a target reverse recovery charge is provided, which specifically includes the following steps:

[0118] S601 , determining a reverse recovery charge difference between other thyristors and a reference thyristor according to a reference turn-off voltage amplitude and other turn-off voltage amplitudes.

[0119] The reverse recovery charge difference is the difference between the reverse recovery charges of the other thyristors and the reverse recovery charge of the reference thyristor.

[0120] Optionally, based on a calculation function of the reverse recovery charge difference, the reverse recovery charge difference between other thyristors and the reference thyristor may be calculated according to the reference turn-off voltage amplitude and other turn-off voltage amplitudes.

[0121] Optionally, in order to further ensure the accuracy of the determined reverse recovery charge difference, for each other thyristor, the difference between the other turn-off voltage amplitude of the other thyristor and the reference turn-off voltage amplitude of the reference thyristor can be used as the turn-off voltage difference between the other thyristor and the reference thyristor; and the product between the turn-off voltage difference corresponding to the other thyristor and the damping capacitance can be used as the reverse recovery charge difference of the other thyristor.

[0122] Specifically, for any other thyristor, the other turn-off voltage amplitude of the other thyristor and the reference turn-off voltage amplitude of the reference thyristor can be subtracted to obtain the turn-off voltage difference between the other thyristor and the reference thyristor. The turn-off voltage difference corresponding to the other thyristor can be expressed by the following formula (3):

[0123] (3)

[0124] in, For the The turn-off voltage difference between the other thyristors and the reference thyristor; For the Other turn-off voltage amplitudes of other thyristors.

[0125] Furthermore, the product of the turn-off voltage difference and the damping capacitance corresponding to the other thyristors is used as the reverse recovery charge difference of the other thyristors. Specifically, the reverse recovery charge difference of the other thyristors can be expressed by the following formula (4):

[0126] (4)

[0127] in, For the The reverse recovery charge difference of the other thyristors; is the damping capacitor of other thyristors.

[0128] S602 , determining target reverse recovery charges of other thyristors according to the reverse recovery charge difference and the reference reverse recovery charge.

[0129] Optionally, the difference between the reference reverse recovery charge and the reverse recovery charge difference may be used as the target reverse recovery charge of other thyristors. Specifically, the target reverse recovery charge of other thyristors may be expressed by the following formula (5):

[0130] (5)

[0131] in, For the The target reverse recovery charge of each of the other thyristors.

[0132] In this embodiment, by introducing the reverse recovery charge difference between other thyristors and the reference thyristor, and based on the reverse recovery charge difference, the target reverse recovery charge of other thyristors can be accurately determined.

[0133] Optionally, in one embodiment, as shown in FIG7 , a method for evaluating the thyristor state of other thyristors is provided, which specifically includes the following steps:

[0134] S701 : For any other thyristor, obtain a reverse recovery charge curve of the other thyristor.

[0135] Alternatively, theoretical studies have shown that the reverse recovery charge of the thyristor is related to the forward conduction current and the current commutation rate of the thyristor, and the greater the forward conduction current and the current commutation rate, the greater the reverse recovery charge of the thyristor. Specifically, it can be expressed by the following formula (6):

[0136] (6)

[0137] in, Represents the reverse recovery charge curve of the thyristor; For the forward conduction current; is the current commutation ratio; , and is the coefficient.

[0138] Based on this, for any other thyristor, since in practical applications, the model of other thyristors is known, and the reverse recovery curve of other thyristors is also known, a single point can be selected on the reverse recovery curve of other thyristors to solve the coefficient in the above formula (6) , and The only solution of ; further, according to the coefficient , and The unique solution of , and the above formula (6) give the specific expression of the reverse recovery curve.

[0139] S702 , determining normalization coefficients corresponding to other thyristors according to reverse recovery charge curves and rated currents of other thyristors and current currents of other thyristors under current working conditions.

[0140] Among them, the rated current is the current of other thyristors under rated operating conditions.

[0141] Optionally, the current current of other thyristors under the current working condition is used as the forward conduction current and is substituted into the above formula (6), that is, the reverse recovery charge curve of other thyristors, to obtain the reverse recovery charge of other thyristors under the current working condition. Specifically, the reverse recovery charge of other thyristors under the current working condition is shown in the following formula (7):

[0142] (7)

[0143] Under the current working conditions, the forward conduction current and current commutation ratio of other thyristors meet the following requirements:

[0144] (8)

[0145] (9)

[0146] in, is the DC current transformation coefficient; is the DC voltage transformation coefficient; is the rated current; is the rated current commutation ratio.

[0147] Furthermore, the normalization coefficient under the current working condition is:

[0148] (10)

[0149] in, is the normalization coefficient corresponding to other thyristors.

[0150] S703 , determining equivalent charge values ​​of other thyristors when they are converted from current operating conditions to rated operating conditions according to target reverse recovery charges and normalization coefficients of other thyristors.

[0151] Optionally, the product of the target reverse recovery charge of other thyristors and the normalization coefficient is used as the equivalent charge value of other thyristors converted from the current working condition to the rated working condition. Specifically, the equivalent charge value can be expressed by the following formula (11):

[0152] (11)

[0153] in, For the The equivalent charge value of other thyristors.

[0154] S704, evaluating the thyristor states of other thyristors according to the equivalent charge value.

[0155] Optionally, the equivalent charge value may be input into the state evaluation model, so that the state evaluation model evaluates the states of other thyristors according to the equivalent charge value.

[0156] In this embodiment, by introducing the reverse recovery charge curve and the normalization coefficient, the accuracy and rationality of the calculated equivalent charge value are guaranteed; further, the states of other thyristors are evaluated according to the equivalent charge value, thereby ensuring the accuracy of the evaluation result.

[0157] Optionally, in one embodiment, as shown in FIG8 , a method for evaluating the thyristor status of other thyristors is provided, which specifically includes the following steps:

[0158] S801 , taking the difference between the initial charge value and the equivalent charge value of the other thyristors before use as the charge degradation value of the other thyristors.

[0159] Optionally, the equivalent charge value under this operating condition can be compared with the initial charge value before use, that is, the initial value of the rated operating condition, to obtain the charge degradation value of each other thyristor before and after operation. Specifically, the difference between the initial charge value and the equivalent charge value of other thyristors before use can be used as the charge degradation value of other thyristors.

[0160] S802 , evaluating the thyristor states of other thyristors according to the charge degradation values ​​of other thyristors.

[0161] Optionally, the evaluation is performed from the perspective of device failure caused by thyristor performance degradation. The degradation state of other thyristors can be evaluated based on the charge degradation value. Specifically, other thyristors with severe degradation can be screened out based on the charge degradation value and the degradation value threshold.

[0162] Optionally, the evaluation can also be conducted from the perspective of the voltage stress increase caused by the large difference in reverse recovery characteristics of the thyristors. The average charge difference can be calculated from the reverse recovery charge difference between the reference thyristor and other thyristors under this condition, and other thyristors that cause the reverse recovery charge difference to be too large can be screened out.

[0163] In this embodiment, by introducing the charge degradation value, the thyristor states of other thyristors can be reasonably and accurately evaluated.

[0164] FIG9 is a flow chart of a thyristor state evaluation method in another embodiment. Based on the above embodiment, this embodiment provides an optional example of a thyristor state evaluation method. In conjunction with FIG9 , the specific implementation process is as follows:

[0165] S901, monitoring the current of the reference thyristor in the target converter valve layer within the reverse blocking recovery time through a current sensor to obtain a current curve of the reference thyristor.

[0166] The reference thyristor is any thyristor in the target commutation valve layer.

[0167] S902, integrating the current curve to obtain a reference reverse recovery charge of a reference thyristor.

[0168] S903, obtaining a first reverse recovery voltage curve of a reference thyristor during a reverse blocking recovery process, and obtaining a second reverse recovery voltage curve of other thyristors during a reverse blocking recovery process.

[0169] S904: Determine a voltage turning point according to the slope of the first reverse recovery voltage curve.

[0170] S905, obtaining a first voltage of the first reverse recovery voltage curve at a voltage turning point, and a second voltage of the first reverse recovery voltage curve at different preset time points after the voltage turning point.

[0171] S906, determining a reference turn-off voltage amplitude of a reference thyristor according to the first voltage and each second voltage.

[0172] S907, determining other turn-off voltage amplitudes of other thyristors according to the second reverse recovery voltage curve.

[0173] S908 , determining a reverse recovery charge difference between other thyristors and the reference thyristor according to the reference turn-off voltage amplitude and the other turn-off voltage amplitudes.

[0174] Optionally, for each other thyristor, the difference between the other turn-off voltage amplitude of the other thyristor and the reference turn-off voltage amplitude of the reference thyristor is used as the turn-off voltage difference between the other thyristor and the reference thyristor; the product between the turn-off voltage difference corresponding to the other thyristor and the damping capacitance is used as the reverse recovery charge difference of the other thyristor.

[0175] S909 , determining target reverse recovery charges of other thyristors according to the reverse recovery charge difference and the reference reverse recovery charge.

[0176] S910, obtaining reverse recovery charge curves of other thyristors.

[0177] S911, determining normalization coefficients corresponding to other thyristors according to reverse recovery charge curves and rated currents of other thyristors and current currents of other thyristors under current working conditions.

[0178] S912, determining equivalent charge values ​​of other thyristors converted from current operating conditions to rated operating conditions according to target reverse recovery charges and normalization coefficients of other thyristors.

[0179] S913, evaluating the thyristor states of other thyristors according to the equivalent charge value.

[0180] Optionally, the difference between the initial charge value and the equivalent charge value of other thyristors before use is used as the charge degradation value of other thyristors; and the thyristor states of other thyristors are evaluated according to the charge degradation value of other thyristors.

[0181] The specific process of S901-S913 above can refer to the description of the above method embodiment, and its implementation principle and technical effect are similar, which will not be repeated here.

[0182] It should be understood that, although the various steps in the flowcharts involved in the above-mentioned embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps does not have a strict order restriction, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-mentioned embodiments can include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0183] Based on the same inventive concept, the embodiment of the present application also provides a thyristor state evaluation device for implementing the thyristor state evaluation method involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in one or more thyristor state evaluation device embodiments provided below can refer to the limitations of the thyristor state evaluation method above, and will not be repeated here.

[0184] In an exemplary embodiment, as shown in FIG10 , a thyristor state evaluation device 1 is provided, comprising: a first determination module 10 , an amplitude acquisition module 20 , a second determination module 30 and a state evaluation module 40 , wherein:

[0185] The first determination module 10 is used to determine the reference reverse recovery charge of the reference thyristor according to the current curve of the reference thyristor in the target converter valve layer within the reverse blocking recovery time; wherein the reference thyristor is any thyristor in the target converter valve layer.

[0186] The amplitude acquisition module 20 is used to acquire the reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors; wherein the other thyristors are thyristors in the target commutation valve layer except the reference thyristor.

[0187] The second determination module 30 is used to determine the target reverse recovery charges of other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes.

[0188] The state evaluation module 40 is used to evaluate the thyristor states of other thyristors according to the target reverse recovery charge.

[0189] The above-mentioned thyristor state evaluation device selects any thyristor in the target commutation valve layer as the reference thyristor, and determines the reference reverse recovery charge of the reference thyristor according to the current curve of the reference thyristor in the target commutation valve layer during the reverse blocking recovery time; further, according to the obtained reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors, and the reference reverse recovery charge, the target reverse recovery charge of other thyristors can be accurately determined; finally, according to the target reverse recovery charge, the thyristor state of other thyristors is evaluated. The above-mentioned scheme, by introducing the reference thyristor, does not need to detect the current of all thyristors, but only needs to monitor the current of one thyristor (i.e., the reference thyristor), and the reference reverse recovery charge of the reference thyristor can be accurately obtained according to the monitored current curve; further, according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes, the target reverse recovery charge of other thyristors can be accurately determined, and the state of other thyristors can be accurately evaluated based on the target reverse recovery charge, thereby reducing cost and complexity.

[0190] In one embodiment, the first determining module 10 is specifically configured to:

[0191] The current of the reference thyristor in the target converter valve layer is monitored within the reverse blocking recovery time by a current sensor to obtain a current curve of the reference thyristor; the current curve is integrated to obtain a reference reverse recovery charge of the reference thyristor.

[0192] In one embodiment, the amplitude acquisition module 20 includes:

[0193] The curve acquisition unit is used to acquire a first reverse recovery voltage curve of a reference thyristor during a reverse blocking recovery process, and to acquire a second reverse recovery voltage curve of other thyristors during a reverse blocking recovery process.

[0194] The first determining unit is used to determine a reference turn-off voltage amplitude of a reference thyristor according to a first reverse recovery voltage curve.

[0195] The second determining unit is used to determine other turn-off voltage amplitudes of other thyristors according to the second reverse recovery voltage curve.

[0196] In one embodiment, the first determining unit is specifically configured to:

[0197] Determine a voltage turning point according to the slope of the first reverse recovery voltage curve; obtain a first voltage of the first reverse recovery voltage curve at the voltage turning point, and a second voltage of the first reverse recovery voltage curve at different preset times after the voltage turning point; determine a reference turn-off voltage amplitude of a reference thyristor according to the first voltage and each second voltage.

[0198] In one embodiment, the second determining module 30 includes:

[0199] The third determining unit is used to determine the reverse recovery charge difference between the other thyristors and the reference thyristor according to the reference turn-off voltage amplitude and the other turn-off voltage amplitude.

[0200] The fourth determining unit is used to determine the target reverse recovery charges of other thyristors according to the reverse recovery charge difference and the reference reverse recovery charge.

[0201] In one embodiment, the third determining unit is specifically configured to:

[0202] For each other thyristor, the difference between the other turn-off voltage amplitude of the other thyristor and the reference turn-off voltage amplitude of the reference thyristor is used as the turn-off voltage difference between the other thyristor and the reference thyristor; the product between the turn-off voltage difference corresponding to the other thyristor and the damping capacitance is used as the reverse recovery charge difference of the other thyristor.

[0203] In one embodiment, the state assessment module 40 includes:

[0204] The charge acquisition unit is used for acquiring the reverse recovery charge curve of any other thyristor.

[0205] The coefficient determination unit is used to determine the normalization coefficients corresponding to other thyristors according to the reverse recovery charge curves and rated currents of other thyristors and the current currents of other thyristors under the current working conditions.

[0206] The conversion unit is used to determine the equivalent charge values ​​of other thyristors converted from the current working condition to the rated working condition according to the target reverse recovery charges and normalization coefficients of other thyristors.

[0207] The state evaluation unit is used for evaluating the thyristor states of other thyristors according to the equivalent charge value.

[0208] In one embodiment, the state evaluation unit is specifically configured to:

[0209] The difference between the initial charge value and the equivalent charge value of other thyristors before use is used as the charge degradation value of other thyristors; and the thyristor state of other thyristors is evaluated according to the charge degradation value of other thyristors.

[0210] Each module in the above thyristor state evaluation device can be implemented in whole or in part by software, hardware, or a combination thereof. Each module can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in a computer device in the form of software, so that the processor can call and execute operations corresponding to each module.

[0211] In one embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be shown in FIG11. The computer device includes a processor, a memory, an input / output interface (Input / Output, referred to as I / O) and a communication interface. The processor, the memory and the input / output interface are connected via a system bus, and the communication interface is connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal via a network connection. When the computer program is executed by the processor, a thyristor state evaluation method is implemented.

[0212] Those skilled in the art will understand that the structure shown in FIG. 11 is merely a block diagram of a partial structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than shown in the figure, or combine certain components, or have a different arrangement of components.

[0213] In one embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the following steps are implemented:

[0214] Determining a reference reverse recovery charge of a reference thyristor according to a current curve of a reference thyristor in a target commutator valve layer within a reverse blocking recovery time; wherein the reference thyristor is any thyristor in the target commutator valve layer;

[0215] Obtaining a reference turn-off voltage amplitude of a reference thyristor and other turn-off voltage amplitudes of other thyristors; wherein the other thyristors are thyristors other than the reference thyristor in the target commutation valve layer;

[0216] Determining target reverse recovery charges of other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes;

[0217] Based on the target reverse recovery charge, the thyristor states of the other thyristors are evaluated.

[0218] In one embodiment, when the processor executes the computer program to determine the reference reverse recovery charge of the reference thyristor in the target converter valve layer according to the current curve of the reference thyristor within the reverse blocking recovery time, the processor further implements the following steps:

[0219] The current of the reference thyristor in the target converter valve layer is monitored within the reverse blocking recovery time by a current sensor to obtain a current curve of the reference thyristor; the current curve is integrated to obtain a reference reverse recovery charge of the reference thyristor.

[0220] In one embodiment, when the processor executes the computer program to obtain the reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors, the following steps are also implemented:

[0221] A first reverse recovery voltage curve of a reference thyristor in a reverse blocking recovery process is obtained, and a second reverse recovery voltage curve of other thyristors in a reverse blocking recovery process is obtained; a reference turn-off voltage amplitude of the reference thyristor is determined according to the first reverse recovery voltage curve; and other turn-off voltage amplitudes of other thyristors are determined according to the second reverse recovery voltage curve.

[0222] In one embodiment, when the processor executes the computer program to determine the reference turn-off voltage amplitude of the reference thyristor according to the first reverse recovery voltage curve, the following steps are further implemented:

[0223] Determine a voltage turning point according to the slope of the first reverse recovery voltage curve; obtain a first voltage of the first reverse recovery voltage curve at the voltage turning point, and a second voltage of the first reverse recovery voltage curve at different preset times after the voltage turning point; determine a reference turn-off voltage amplitude of a reference thyristor according to the first voltage and each second voltage.

[0224] In one embodiment, when the processor executes the computer program to determine the target reverse recovery charges of other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes, the following steps are further implemented:

[0225] According to the reference turn-off voltage amplitude and other turn-off voltage amplitudes, the reverse recovery charge difference between other thyristors and the reference thyristor is determined; according to the reverse recovery charge difference and the reference reverse recovery charge, the target reverse recovery charge of other thyristors is determined.

[0226] In one embodiment, when the processor executes the computer program to determine the reverse recovery charge difference between other thyristors and the reference thyristor according to the reference turn-off voltage amplitude and other turn-off voltage amplitudes, the processor further implements the following steps:

[0227] For each other thyristor, the difference between the other turn-off voltage amplitude of the other thyristor and the reference turn-off voltage amplitude of the reference thyristor is used as the turn-off voltage difference between the other thyristor and the reference thyristor; the product between the turn-off voltage difference corresponding to the other thyristor and the damping capacitance is used as the reverse recovery charge difference of the other thyristor.

[0228] In one embodiment, when the processor executes the computer program to evaluate the thyristor states of other thyristors according to the target reverse recovery charge, the processor further implements the following steps:

[0229] For any other thyristor, obtain the reverse recovery charge curve of the other thyristor; determine the normalization coefficient corresponding to the other thyristor according to the reverse recovery charge curve, rated current, and current current of the other thyristor under the current working condition; determine the equivalent charge value of the other thyristor converted from the current working condition to the rated working condition according to the target reverse recovery charge and normalization coefficient of the other thyristor; and evaluate the thyristor state of the other thyristor according to the equivalent charge value.

[0230] In one embodiment, when the processor executes the computer program to evaluate the thyristor states of other thyristors according to the equivalent charge value, the processor further implements the following steps:

[0231] The difference between the initial charge value and the equivalent charge value of other thyristors before use is used as the charge degradation value of other thyristors; and the thyristor state of other thyristors is evaluated according to the charge degradation value of other thyristors.

[0232] In one embodiment, a computer readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the following steps are implemented:

[0233] Determining a reference reverse recovery charge of a reference thyristor according to a current curve of a reference thyristor in a target commutator valve layer within a reverse blocking recovery time; wherein the reference thyristor is any thyristor in the target commutator valve layer;

[0234] Obtaining a reference turn-off voltage amplitude of a reference thyristor and other turn-off voltage amplitudes of other thyristors; wherein the other thyristors are thyristors other than the reference thyristor in the target commutation valve layer;

[0235] Determining target reverse recovery charges of other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes;

[0236] Based on the target reverse recovery charge, the thyristor states of the other thyristors are evaluated.

[0237] In one embodiment, when the processor executes the computer program to determine the reference reverse recovery charge of the reference thyristor in the target converter valve layer according to the current curve of the reference thyristor within the reverse blocking recovery time, the processor further implements the following steps:

[0238] The current of the reference thyristor in the target converter valve layer is monitored within the reverse blocking recovery time by a current sensor to obtain a current curve of the reference thyristor; the current curve is integrated to obtain a reference reverse recovery charge of the reference thyristor.

[0239] In one embodiment, when the processor executes the computer program to obtain the reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors, the following steps are also implemented:

[0240] A first reverse recovery voltage curve of a reference thyristor in a reverse blocking recovery process is obtained, and a second reverse recovery voltage curve of other thyristors in a reverse blocking recovery process is obtained; a reference turn-off voltage amplitude of the reference thyristor is determined according to the first reverse recovery voltage curve; and other turn-off voltage amplitudes of other thyristors are determined according to the second reverse recovery voltage curve.

[0241] In one embodiment, when the processor executes the computer program to determine the reference turn-off voltage amplitude of the reference thyristor according to the first reverse recovery voltage curve, the following steps are further implemented:

[0242] Determine a voltage turning point according to the slope of the first reverse recovery voltage curve; obtain a first voltage of the first reverse recovery voltage curve at the voltage turning point, and a second voltage of the first reverse recovery voltage curve at different preset times after the voltage turning point; determine a reference turn-off voltage amplitude of a reference thyristor according to the first voltage and each second voltage.

[0243] In one embodiment, when the processor executes the computer program to determine the target reverse recovery charges of other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes, the following steps are further implemented:

[0244] According to the reference turn-off voltage amplitude and other turn-off voltage amplitudes, the reverse recovery charge difference between other thyristors and the reference thyristor is determined; according to the reverse recovery charge difference and the reference reverse recovery charge, the target reverse recovery charge of other thyristors is determined.

[0245] In one embodiment, when the processor executes the computer program to determine the reverse recovery charge difference between other thyristors and the reference thyristor according to the reference turn-off voltage amplitude and other turn-off voltage amplitudes, the processor further implements the following steps:

[0246] For each other thyristor, the difference between the other turn-off voltage amplitude of the other thyristor and the reference turn-off voltage amplitude of the reference thyristor is used as the turn-off voltage difference between the other thyristor and the reference thyristor; the product between the turn-off voltage difference corresponding to the other thyristor and the damping capacitance is used as the reverse recovery charge difference of the other thyristor.

[0247] In one embodiment, when the processor executes the computer program to evaluate the thyristor states of other thyristors according to the target reverse recovery charge, the processor further implements the following steps:

[0248] For any other thyristor, obtain the reverse recovery charge curve of the other thyristor; determine the normalization coefficient corresponding to the other thyristor according to the reverse recovery charge curve, rated current, and current current of the other thyristor under the current working condition; determine the equivalent charge value of the other thyristor converted from the current working condition to the rated working condition according to the target reverse recovery charge and normalization coefficient of the other thyristor; and evaluate the thyristor state of the other thyristor according to the equivalent charge value.

[0249] In one embodiment, when the processor executes the computer program to evaluate the thyristor states of other thyristors according to the equivalent charge value, the processor further implements the following steps:

[0250] The difference between the initial charge value and the equivalent charge value of other thyristors before use is used as the charge degradation value of other thyristors; and the thyristor state of other thyristors is evaluated according to the charge degradation value of other thyristors.

[0251] In one embodiment, a computer program product is provided, comprising a computer program, which, when executed by a processor, implements the following steps:

[0252] Determining a reference reverse recovery charge of a reference thyristor according to a current curve of a reference thyristor in a target converter valve layer within a reverse blocking recovery time; wherein the reference thyristor is any thyristor in the target converter valve layer;

[0253] Obtaining a reference turn-off voltage amplitude of a reference thyristor and other turn-off voltage amplitudes of other thyristors; wherein the other thyristors are thyristors other than the reference thyristor in the target commutation valve layer;

[0254] Determining target reverse recovery charges of other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes;

[0255] Based on the target reverse recovery charge, the thyristor states of the other thyristors are evaluated.

[0256] In one embodiment, when the processor executes the computer program to determine the reference reverse recovery charge of the reference thyristor in the target converter valve layer according to the current curve of the reference thyristor within the reverse blocking recovery time, the processor further implements the following steps:

[0257] The current of the reference thyristor in the target converter valve layer is monitored within the reverse blocking recovery time by a current sensor to obtain a current curve of the reference thyristor; the current curve is integrated to obtain a reference reverse recovery charge of the reference thyristor.

[0258] In one embodiment, when the processor executes the computer program to obtain the reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors, the following steps are also implemented:

[0259] A first reverse recovery voltage curve of a reference thyristor in a reverse blocking recovery process is obtained, and a second reverse recovery voltage curve of other thyristors in a reverse blocking recovery process is obtained; a reference turn-off voltage amplitude of the reference thyristor is determined according to the first reverse recovery voltage curve; and other turn-off voltage amplitudes of other thyristors are determined according to the second reverse recovery voltage curve.

[0260] In one embodiment, when the processor executes the computer program to determine the reference turn-off voltage amplitude of the reference thyristor according to the first reverse recovery voltage curve, the following steps are further implemented:

[0261] Determine a voltage turning point according to the slope of the first reverse recovery voltage curve; obtain a first voltage of the first reverse recovery voltage curve at the voltage turning point, and a second voltage of the first reverse recovery voltage curve at different preset times after the voltage turning point; determine a reference turn-off voltage amplitude of a reference thyristor according to the first voltage and each second voltage.

[0262] In one embodiment, when the processor executes the computer program to determine the target reverse recovery charges of other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and other turn-off voltage amplitudes, the following steps are further implemented:

[0263] According to the reference turn-off voltage amplitude and other turn-off voltage amplitudes, the reverse recovery charge difference between other thyristors and the reference thyristor is determined; according to the reverse recovery charge difference and the reference reverse recovery charge, the target reverse recovery charge of other thyristors is determined.

[0264] In one embodiment, when the processor executes the computer program to determine the reverse recovery charge difference between other thyristors and the reference thyristor according to the reference turn-off voltage amplitude and other turn-off voltage amplitudes, the processor further implements the following steps:

[0265] For each other thyristor, the difference between the other turn-off voltage amplitude of the other thyristor and the reference turn-off voltage amplitude of the reference thyristor is used as the turn-off voltage difference between the other thyristor and the reference thyristor; the product between the turn-off voltage difference corresponding to the other thyristor and the damping capacitance is used as the reverse recovery charge difference of the other thyristor.

[0266] In one embodiment, when the processor executes the computer program to evaluate the thyristor states of other thyristors according to the target reverse recovery charge, the processor further implements the following steps:

[0267] For any other thyristor, obtain the reverse recovery charge curve of the other thyristor; determine the normalization coefficient corresponding to the other thyristor according to the reverse recovery charge curve, rated current, and current current of the other thyristor under the current working condition; determine the equivalent charge value of the other thyristor converted from the current working condition to the rated working condition according to the target reverse recovery charge and normalization coefficient of the other thyristor; and evaluate the thyristor state of the other thyristor according to the equivalent charge value.

[0268] In one embodiment, when the processor executes the computer program to evaluate the thyristor states of other thyristors according to the equivalent charge value, the processor further implements the following steps:

[0269] The difference between the initial charge value and the equivalent charge value of other thyristors before use is used as the charge degradation value of other thyristors; and the thyristor state of other thyristors is evaluated according to the charge degradation value of other thyristors.

[0270] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of relevant data must comply with relevant regulations.

[0271] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0272] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0273] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A thyristor state assessment method, characterized in that: The method comprises: Determining a reference reverse recovery charge of a reference thyristor according to a current curve of the reference thyristor in the target commutation valve layer within a reverse blocking recovery time; wherein the reference thyristor is any thyristor in the target commutation valve layer; Acquire a reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors; wherein the other thyristors are thyristors in the target commutation valve layer except the reference thyristor; Determining target reverse recovery charges of the other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and the other turn-off voltage amplitudes; The thyristor states of the other thyristors are evaluated according to the target reverse recovery charge.

2. The method according to claim 1, characterized in that The step of determining the reference reverse recovery charge of the reference thyristor according to the current curve of the reference thyristor in the target converter valve layer within the reverse blocking recovery time comprises: The current of the reference thyristor in the target commutation valve layer is monitored within the reverse blocking recovery time by a current sensor to obtain a current curve of the reference thyristor; The current curve is integrated to obtain a reference reverse recovery charge of the reference thyristor.

3. The method according to claim 1, characterized in that The obtaining of the reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors includes: Acquire a first reverse recovery voltage curve of the reference thyristor during a reverse blocking recovery process, and acquire a second reverse recovery voltage curve of the other thyristors during a reverse blocking recovery process; Determining a reference turn-off voltage amplitude of the reference thyristor according to the first reverse recovery voltage curve; According to the second reverse recovery voltage curve, other turn-off voltage amplitudes of the other thyristors are determined.

4. The method according to claim 3, characterized in that The step of determining the reference turn-off voltage amplitude of the reference thyristor according to the first reverse recovery voltage curve comprises: Determining a voltage turning point according to the slope of the first reverse recovery voltage curve; Acquire a first voltage of the first reverse recovery voltage curve at the voltage turning point, and a second voltage of the first reverse recovery voltage curve at different preset times after the voltage turning point; A reference turn-off voltage amplitude of the reference thyristor is determined according to the first voltage and each of the second voltages.

5. The method according to claim 1, characterized in that The step of determining target reverse recovery charges of other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and the other turn-off voltage amplitudes includes: Determining a reverse recovery charge difference between the other thyristors and the reference thyristor according to the reference turn-off voltage amplitude and the other turn-off voltage amplitudes; The target reverse recovery charges of the other thyristors are determined according to the reverse recovery charge difference and the reference reverse recovery charge.

6. The method according to claim 5, characterized in that The step of determining the reverse recovery charge difference between the other thyristors and the reference thyristor according to the reference turn-off voltage amplitude and the other turn-off voltage amplitudes comprises: For each other thyristor, taking the difference between the other turn-off voltage amplitude of the other thyristor and the reference turn-off voltage amplitude of the reference thyristor as the turn-off voltage difference between the other thyristor and the reference thyristor; The product of the turn-off voltage difference corresponding to the other thyristors and the damping capacitance is used as the reverse recovery charge difference of the other thyristors.

7. The method according to claim 1, characterized in that The evaluating the thyristor states of the other thyristors according to the target reverse recovery charge comprises: For any other thyristor, obtaining a reverse recovery charge curve of the other thyristor; Determine a normalization coefficient corresponding to the other thyristors according to a reverse recovery charge curve and a rated current of the other thyristors and a current current of the other thyristors under a current working condition; Determining, according to the target reverse recovery charge of the other thyristors and the normalization coefficient, an equivalent charge value of the other thyristors converted from a current operating condition to a rated operating condition; The thyristor states of the other thyristors are evaluated according to the equivalent charge value.

8. The method according to claim 7, characterized in that The step of evaluating the thyristor states of the other thyristors according to the equivalent charge value comprises: taking the difference between the initial charge value of the other thyristor before use and the equivalent charge value as the charge degradation value of the other thyristor; The thyristor states of the other thyristors are evaluated according to the charge degradation values ​​of the other thyristors.

9. A thyristor state evaluation device, characterized in that: The device comprises: A first determination module is used to determine a reference reverse recovery charge of a reference thyristor in a target converter valve layer according to a current curve of the reference thyristor in the target converter valve layer within a reverse blocking recovery time; wherein the reference thyristor is any thyristor in the target converter valve layer; An amplitude acquisition module, used to acquire a reference turn-off voltage amplitude of the reference thyristor and other turn-off voltage amplitudes of other thyristors; wherein the other thyristors are thyristors in the target commutation valve layer except the reference thyristor; A second determination module, configured to determine target reverse recovery charges of the other thyristors according to the reference turn-off voltage amplitude, the reference reverse recovery charge, and the other turn-off voltage amplitudes; A state evaluation module is used to evaluate the thyristor states of the other thyristors according to the target reverse recovery charge.

10. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

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