Method and device for establishing photomask correction model

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to an establishment method and device of a photomask correction model, a correction method of a photomask layout, a manufacturing method of a photomask and a photoetching method. The method for establishing the photomask correction model comprises the following steps: acquiring a photomask design layout; the photomask design layout comprises a plurality of test design patterns which are arranged in a staggered manner; obtaining a plurality of test patterns corresponding to the test design patterns based on the photomask design layout; obtaining size information of each test pattern according to a preset measurement rule; the measurement rule comprises at least two different measurement angles; and performing model fitting based on the size information and the photomask design layout to obtain a photomask correction model. Through the setting, more comprehensive and more accurate size information of the test pattern can be obtained, the accuracy of the test pattern is improved, the precision of adjusting the photomask design layout is further improved, and the accuracy of revising the photomask design layout is improved by establishing the photomask revising model containing multi-angle data information.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a method and device for establishing a mask correction model, a method for correcting a mask layout, a method for manufacturing a mask, and a photolithography method. Background Art

[0002] Due to the advantages of Inverse Lithography Technology (ILT) in improving process window and edge placement error (EPE), it plays an increasingly important role in the semiconductor manufacturing process, and the development of ILT has also attracted much attention in the industry.

[0003] In the process of mask pattern optimization, compared with conventional optical proximity correction (Optical Proximity Correction) technology, pixel-based ILT technology has more advantages in complex graphic environments. The performance of ILT depends largely on the accuracy of the model. The current common ILT solution is to use the traditional OPC model to optimize the graphics. The graphics modeled by the traditional OPC model are simple and the measurement accuracy is low, which cannot meet the application scenario requirements of ILT well. Summary of the invention

[0004] Based on this, it is necessary to provide a method and device for establishing a mask correction model, a mask layout correction method, a mask manufacturing method and a lithography method, which can improve measurement accuracy and quickly correct the mask layout in order to solve the above technical problems.

[0005] In a first aspect, the present application provides a method for establishing a mask correction model, comprising:

[0006] Acquire a mask design layout; the mask design layout includes a plurality of test design patterns arranged in a staggered manner;

[0007] Obtaining a plurality of test patterns corresponding to the test design pattern based on the mask design layout;

[0008] According to a preset measurement rule, the size information of each test pattern is obtained; the measurement rule includes at least two different measurement angles;

[0009] Model fitting is performed based on the size information and the mask design layout to obtain a mask correction model.

[0010] In one embodiment, the step of obtaining a plurality of test patterns corresponding to the test design pattern based on the mask design layout includes:

[0011] Making a test mask based on the mask design layout;

[0012] The test photosensitive material layer on the surface of the test substrate is exposed and developed based on the test mask to obtain the test pattern.

[0013] In one embodiment, obtaining the size information of each test pattern according to a preset measurement rule includes:

[0014] Select multiple measurement angles;

[0015] Each of the test patterns is measured at each of the measurement angles to obtain size information of each of the test patterns.

[0016] In one embodiment, the plurality of measurement angles include: 0°, 30°, 45°, 60° and 90°. In one embodiment, the model fitting based on the size information and the mask design layout to obtain the mask correction model includes:

[0017] When there is a size deviation between the test pattern and the corresponding test design pattern, the test design pattern is corrected based on the size deviation;

[0018] Repeat the above steps several times until the size deviation is eliminated to obtain the target design pattern;

[0019] The mask correction model is obtained based on the target design pattern.

[0020] In a second aspect, the present application also provides a mask correction model establishment system, comprising:

[0021] A first acquisition module is used to acquire a mask design layout; the mask design layout includes a plurality of test design patterns arranged in a staggered manner;

[0022] A second acquisition module, configured to obtain a plurality of test patterns corresponding to the test design pattern based on the mask design layout;

[0023] A measuring module, used for obtaining the size information corresponding to each of the test patterns according to a preset measuring rule; the measuring rule includes at least two different measuring angles;

[0024] The fitting module is used to perform model fitting based on the size information and the mask design layout to obtain a mask correction model.

[0025] In one embodiment, the second acquisition module is further configured to:

[0026] Making a test mask based on the mask design layout;

[0027] The test photosensitive material layer on the surface of the test substrate is exposed and developed based on the test mask to obtain the test pattern.

[0028] In one embodiment, the measurement module is further configured to:

[0029] Select multiple measurement angles;

[0030] Each of the test patterns is measured at each of the measurement angles to obtain size information of each of the test patterns.

[0031] In one embodiment, the fitting module is further configured to:

[0032] When there is a size deviation between the test pattern and the corresponding test design pattern, correcting the test design pattern based on the size deviation;

[0033] Repeat the above steps several times until the size deviation is eliminated to obtain the target design pattern;

[0034] The mask correction model is obtained based on the target design pattern.

[0035] In a third aspect, the present application also provides a method for correcting a mask pattern, comprising:

[0036] The mask correction model is obtained by adopting the method for establishing the mask correction model described in any of the above embodiments;

[0037] The mask design layout to be corrected is corrected based on the mask correction model to obtain a target mask layout.

[0038] In a fourth aspect, the present application also provides a method for manufacturing a photomask, comprising:

[0039] Using the mask layout correction method described in any of the above embodiments to obtain a target mask layout;

[0040] The target mask pattern is used for production to obtain a desired mask.

[0041] In a fifth aspect, the present application further provides a photolithography method, comprising:

[0042] A photomask is manufactured by using the photomask manufacturing method described in any of the above embodiments;

[0043] Providing a substrate, and forming a photosensitive layer on a surface of the substrate;

[0044] The photosensitive material layer is exposed and developed based on the photomask to obtain a patterned mask layer.

[0045] The above-mentioned method and device for establishing a mask correction model, method for correcting a mask layout, method for making a mask and lithography method can collect data from multiple angles and multiple aspects of the test pattern through customized measurement rules, thereby obtaining more comprehensive and accurate size information, which improves the accuracy of the test pattern finally obtained, and thus can improve the accuracy of subsequent adjustments to the mask design layout. The accuracy of the mask layout correction is improved by establishing a mask correction model containing multi-angle data information. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 is a schematic flow chart of a method for establishing a mask correction model in an embodiment;

[0047] Figure 2 A schematic diagram of a graphic design structure of a mask design layout in a method for establishing a mask correction model in an embodiment;

[0048] Figure 3 A schematic diagram of a graphic design structure of a mask design layout in a method for establishing a mask correction model in an embodiment;

[0049] Figure 4 A schematic diagram of measurement angles of a method for establishing a mask correction model in one embodiment;

[0050] Figure 5 is a schematic flow chart of a method for establishing a mask correction model in an embodiment;

[0051] Figure 6 is a structural block diagram of a device for establishing a mask correction model in one embodiment;

[0052] Figure 7 is a schematic flow chart of a method for correcting a mask pattern in one embodiment;

[0053] Figure 8 is a schematic flow chart of a method for manufacturing a photomask in one embodiment;

[0054] Fig. 9 FIG. 4 is a schematic diagram of a process of a photolithography method in an embodiment. DETAILED DESCRIPTION

[0055] In order to facilitate understanding of the present disclosure, the present disclosure will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present disclosure more thorough and comprehensive.

[0056] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. The terms used herein in the specification of the present disclosure are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure.

[0057] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there may be no intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer or part discussed below may be represented as a second element, component, region, layer or part.

[0058] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0059] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of the features, integers, steps, operations, elements and / or parts can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0060] As used herein, a "deposition" process includes, but is not limited to, physical vapor deposition (PVD), chemical vapor deposition (CVD), or atomic layer deposition (ALD).

[0061] Embodiments of the invention are described herein with reference to cross-sectional views which are schematic diagrams of ideal embodiments (and intermediate structures) of the invention, such that variations in the shapes shown due to, for example, manufacturing techniques and / or tolerances are anticipated. Thus, embodiments of the invention should not be limited to the specific shapes of the regions shown herein, but rather include deviations in shapes due to, for example, manufacturing techniques. For example, an implanted region shown as a rectangle typically has rounded or curved features and / or an implant concentration gradient at its edges rather than a binary change from an implanted region to a non-implanted region. Similarly, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is performed. Thus, the regions shown in the figures are schematic in nature, their shapes do not represent the actual shape of the region of the device, and do not limit the scope of the invention.

[0062] In one embodiment, a method for establishing a mask correction model is provided. Figure 1 As shown, the method for establishing the mask correction model includes:

[0063] Step 202, obtaining a mask design layout; the mask design layout includes a plurality of test design patterns arranged in a staggered manner;

[0064] Step 204, obtaining a plurality of test patterns corresponding to the test design patterns based on the mask design layout;

[0065] Step 206: Obtaining the size information of each test pattern according to a preset measurement rule; the measurement rule includes at least two different measurement angles;

[0066] Step 208 : performing model fitting based on the size information and the mask design layout to obtain a mask correction model.

[0067] like Figure 2-3 As shown, complex environment graphics such as NxN staggered squares (StaggerSquare) with a staggered spacing of 1 / 2 pitch, 1 / 3 pitch, and NxN staggered rectangles (StaggerRectangle) can be selected as the graphic types of the test design graphics. The graphic size in the test design graphics is set according to the user's selection to generate a layout file.

[0068] In step 204, the mask design layout is exposed on a wafer, and the mask pattern is transferred to the wafer by exposure to obtain a test pattern.

[0069] The measurement rule refers to the method of measuring the size of the test pattern. The measurement rule includes at least two different measurement angles, so that the actual size information of the test pattern at multiple measurement angles can be obtained, so that the size information can more accurately describe the actual shape of the test pattern.

[0070] The mask correction model refers to the graphic model obtained using ILT technology.

[0071] Inverse Lithography Technology (ILT), also known as reverse lithography or reverse lithography, is an algorithm that inversely calculates the graphics required on the mask based on the graphics to be achieved.

[0072] In step 208, the dimension information collected in step 206 can be organized into a gauge file recognizable by the EDA modeling software, and the gauge file and the layout file generated according to the mask design layout are input into the EDA modeling software for model fitting to obtain a mask correction model.

[0073] The method for establishing the mask correction model provided by the embodiment of the present disclosure is as described above. In the embodiment of the present disclosure, the initial mask design layout is first obtained, and then the corresponding test pattern is obtained according to the mask design layout, and then the size information of the test pattern is obtained according to the measurement rules, and finally the mask correction model is obtained according to the size information of the original mask design layout and the test pattern. Through this setting, it is possible to collect data from multiple angles and multiple aspects of the test pattern through custom measurement rules, so as to obtain more comprehensive and accurate size information, which improves the accuracy of the test pattern finally obtained, and then can improve the accuracy of the subsequent adjustment of the mask design layout, and improves the accuracy of the mask design layout correction by establishing a mask correction model containing multi-angle data information.

[0074] In some optional embodiments, step 204 includes:

[0075] Make test masks based on mask design layout;

[0076] The test photosensitive material layer on the surface of the test substrate is exposed and developed based on the test mask to obtain a test pattern.

[0077] As an example, according to preset exposure parameters, the test photosensitive material layer on the surface of the test substrate is exposed and developed based on the test mask, wherein the exposure parameters may include an optimal laser power and a moving speed of an optimal exposure focusing platform set according to actual work requirements. The exposure focusing platform may be a platform with an optimal exposure focal length.

[0078] Wherein, the test photosensitive material layer includes a photoresist layer.

[0079] In some optional embodiments, step 206 includes:

[0080] Select multiple measuring angles; measure each of the test patterns at each measuring angle to obtain size information of each test pattern.

[0081] Multiple measuring angles include: 0°, 30°, 45°, 60° and 90°.

[0082] As an example, the measuring angle may also be any preset angle.

[0083] As an example, in the process of measuring the test pattern in step 206, the pattern size corresponding to each measurement angle can be obtained at a preset measurement point of the test pattern as the size information. The preset measurement point can be a particle position of the test pattern.

[0084] like Figure 4 As shown, the measurement angle can be an angle based on a pre-established coordinate system, the coordinate system can use the horizontal direction as the x-axis and the vertical direction as the y-axis, and the measurement angle can be selected from a variety of angles such as 0°, 60°, 45°, 60°, 90°, etc. Through this setting, the actual size information of each test pattern at a variety of measurement angles can be obtained in step 206, so that the size information can more accurately describe the actual shape of the test pattern. In turn, the mask correction model finally obtained can be more accurate, and finally the mask obtained in actual production based on the mask correction model can be closer to user needs.

[0085] like Figure 5 As shown, in some optional embodiments, step 208 includes:

[0086] Step 2082: when there is a size deviation between the test pattern and the corresponding test design pattern, the test design pattern is corrected based on the size deviation;

[0087] Step 2084, repeating step 2082 several times until the size deviation is eliminated to obtain the target design pattern;

[0088] Step 2086: Obtain a mask correction model based on the target design pattern.

[0089] As an example, when the overall size of the test pattern is smaller than the size of the target exposure pattern, the initial position of the test design pattern is enlarged according to a preset enlargement ratio to obtain a corrected test design pattern. When the overall size of the test pattern is larger than the size of the target exposure pattern, the initial position of the test design pattern is reduced according to a preset reduction ratio to obtain a corrected test design pattern. When the size of a portion of the outline of the test pattern is smaller than the size of the target exposure pattern, the corresponding outline of the test design pattern is enlarged in a direction away from the center of the test design pattern according to a preset enlargement distance. When the size of a portion of the outline of the test pattern is larger than the size of the target exposure pattern, the corresponding outline of the test design pattern is reduced in a direction close to the center of the test design pattern according to a preset reduction distance.

[0090] The preset requirement may be that the similarity between the test pattern corresponding to the newly corrected test design pattern and the target exposure pattern reaches a preset similarity threshold, or that the deviation of the corresponding position size is not greater than a preset size threshold.

[0091] In this embodiment, based on the angle information of the test pattern at multiple angles, the correction of the test design pattern can be more precise.

[0092] In this embodiment, the mask correction model can be called to correct the mask design layout to be processed in units of pixels to obtain a curvilinear mask pattern.

[0093] Based on the mask correction model, the staff can first obtain the test pattern corresponding to the desired target exposure pattern according to the correspondence between the test patterns and test design patterns contained in the mask correction model, further match it to the test design pattern corresponding to the test pattern, and correct the mask design layout to be processed according to the test design pattern.

[0094] In the above-mentioned method for establishing the mask correction model, in the hole layer ILT application scenario, a mask design layout with complex environmental offset graphics can be used to design the mask design layout, so that the mask design layout can include a variety of graphic types and cover more and more comprehensive graphic situations; at least two measurement angles are used to measure the size of the test graphics, so as to obtain the size information of the test graphics at different angles, thereby improving the measurement accuracy of the test graphics, and based on more accurate test graphics, the adjustment of the mask design layout can be more detailed, which makes the correspondence between the test design graphics and the test graphics covered by the mask correction model finally obtained can be more in line with actual needs.

[0095] It should be understood that, although the steps in the flowcharts involved in the above embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0096] Based on the same inventive concept, the embodiment of the present application also provides a memory data access device for implementing the memory data access method involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in one or more memory data access device embodiments provided below can refer to the limitations on the memory data access method above, and will not be repeated here.

[0097] In one embodiment, Figure 6 As shown, a system 600 for establishing a mask correction model is provided, comprising: a first acquisition module 602, a second acquisition module 604, a measurement module 606 and a fitting module 608, wherein:

[0098] The first acquisition module 602 is used to acquire a mask design layout; the mask design layout includes a plurality of test design patterns arranged in a staggered manner;

[0099] The second acquisition module 604 is used to obtain a plurality of test patterns corresponding to the test design pattern based on the mask design layout;

[0100] The measuring module 606 is used to obtain the size information of each of the test patterns according to a preset measuring rule; the measuring rule includes at least two different measuring angles;

[0101] The fitting module 608 is used to perform model fitting based on the size information and the mask design layout to obtain a mask correction model.

[0102] In some optional embodiments, the second acquisition module 604 is further configured to:

[0103] Make test masks based on mask design layout;

[0104] The test photosensitive material layer on the surface of the test substrate is exposed and developed based on the test mask to obtain a test pattern.

[0105] In some optional embodiments, the measurement module 606 is further configured to:

[0106] Select multiple measurement angles;

[0107] Each test pattern is measured at each measurement angle to obtain the size information of each test pattern.

[0108] In some optional embodiments, the fitting module 608 is further configured to:

[0109] When there is a size deviation between the test pattern and the corresponding test design pattern, the test design pattern is corrected based on the size deviation;

[0110] Repeat the above steps several times until the size deviation is eliminated to obtain the target design pattern;

[0111] A mask correction model is obtained based on the target design pattern.

[0112] Each module in the above-mentioned mask correction model establishment system can be implemented in whole or in part by software, hardware, or a combination thereof. Each of the above-mentioned modules can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in a computer device in the form of software, so that the processor can call and execute the operations corresponding to each of the above modules.

[0113] like Figure 7 As shown, further, in one embodiment, a method for correcting a mask pattern is provided, comprising:

[0114] Step 702, obtaining a mask correction model by using the mask correction model establishment method described in any of the above embodiments;

[0115] Step 704: correct the mask design layout to be corrected based on the mask correction model to obtain a target mask layout.

[0116] Furthermore, if Figure 8 As shown, in one embodiment, a method for manufacturing a photomask is also provided, comprising:

[0117] Step 802, using the mask layout correction method described in any of the above embodiments to obtain a target mask layout;

[0118] Step 804: Produce based on the target mask layout to obtain a desired mask.

[0119] In one embodiment, the method for making a photomask is as described above. The technical effect that can be achieved by the method for making a photomask is the same as the technical effect that can be achieved by the model building method in the above embodiment, and will not be described in detail here.

[0120] The photomask, also known as a photomask or mask, can be made of quartz glass, metal chromium and photosensitive resin. As an example, the photomask can be made of quartz glass as a substrate, on which a layer of metal chromium and photosensitive resin is plated to become a photosensitive material. The designed pattern is then exposed to the photosensitive resin through an electronic laser device, and the exposed area will be developed to form a pattern on the metal chromium, namely a test pattern.

[0121] like Fig. 9 As shown, in one embodiment, a photolithography method is also provided, comprising:

[0122] Step 902: manufacturing a photomask using the photomask manufacturing method described in any of the above embodiments;

[0123] Step 904, providing a substrate, and forming a photosensitive layer on the surface of the substrate;

[0124] Step 906: Expose and develop the photosensitive material layer based on the photomask to obtain a patterned mask layer.

[0125] Then, in one embodiment, an electronic device is also provided, including a memory and a processor. The memory stores computer instructions. When the computer instructions are executed by the processor, the following steps are implemented:

[0126] Acquire a mask design layout; the mask design layout includes a plurality of test design patterns arranged in a staggered manner;

[0127] Obtaining a plurality of test patterns corresponding to the test design patterns based on the mask design layout;

[0128] According to a preset measurement rule, the size information of each test pattern is obtained; the measurement rule includes at least two different measurement angles;

[0129] The model is fitted based on the size information and the mask design layout to obtain the mask correction model.

[0130] In some optional embodiments, the computer instructions are further used for the following steps when executed by the processor:

[0131] Make test masks based on mask design layout;

[0132] The test photosensitive material layer on the surface of the test substrate is exposed and developed based on the test mask to obtain a test pattern.

[0133] In some optional embodiments, the computer instructions are further used for the following steps when executed by the processor:

[0134] Select multiple measurement angles;

[0135] Each test pattern is measured at each measurement angle to obtain the size information of each test pattern.

[0136] In some optional embodiments, the plurality of measuring angles include: 0°, 30°, 45°, 60° and 90°.

[0137] In some optional embodiments, the computer instructions are further used for the following steps when executed by the processor:

[0138] When there is a size deviation between the test pattern and the corresponding test design pattern, the test design pattern is corrected based on the size deviation;

[0139] Repeat the above steps several times until the size deviation is eliminated to obtain the target design pattern;

[0140] A mask correction model is obtained based on the target design pattern.

[0141] Finally, in one embodiment, a storage medium is further provided, characterized in that the storage medium stores computer instructions that are suitable for execution by a processor, and when the computer instructions are executed by the processor, the following steps are implemented:

[0142] Acquire a mask design layout; the mask design layout includes a plurality of test design patterns arranged in a staggered manner;

[0143] Obtaining a plurality of test patterns corresponding to the test design patterns based on the mask design layout;

[0144] According to a preset measurement rule, the size information of each test pattern is obtained; the measurement rule includes at least two different measurement angles;

[0145] The model is fitted based on the size information and the mask design layout to obtain the mask correction model.

[0146] In some optional embodiments, the computer instructions are further used for the following steps when executed by the processor:

[0147] Make test masks based on mask design layout;

[0148] The test photosensitive material layer on the surface of the test substrate is exposed and developed based on the test mask to obtain a test pattern.

[0149] In some optional embodiments, the computer instructions are further used for the following steps when executed by the processor:

[0150] Select multiple measurement angles;

[0151] Each test pattern is measured at each measurement angle to obtain the size information of each test pattern.

[0152] In some optional embodiments, the plurality of measuring angles include: 0°, 30°, 45°, 60° and 90°.

[0153] In some optional embodiments, the computer instructions are further used for the following steps when executed by the processor:

[0154] When there is a size deviation between the test pattern and the corresponding test design pattern, the test design pattern is corrected based on the size deviation;

[0155] Repeat the above steps several times until the size deviation is eliminated to obtain the target design pattern;

[0156] A mask correction model is obtained based on the target design pattern.

[0157] Those of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory may include read-only memory (ROM), floppy disk, flash memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), etc. Volatile memory may include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The processor involved in the embodiments provided in this application may be a general-purpose processor, a central processing unit, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but is not limited thereto.

[0158] In the above storage medium and electronic device, when the computer instructions are executed by the processor, the model building method described in any one of the above schemes is adopted. In this way, the above storage medium and electronic device are used to build a graphics correction model, which can achieve graphics correction model building in a compliant and efficient manner.

[0159] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0160] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0161] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A method for establishing a mask correction model, characterized in that: include: Acquire a mask design layout; the mask design layout includes a plurality of test design patterns arranged in a staggered manner; Obtaining a plurality of test patterns corresponding to the test design pattern based on the mask design layout; According to a preset measurement rule, obtaining the size information of each of the test patterns; The measurement rule includes at least two different measurement angles; Model fitting is performed based on the size information and the mask design layout to obtain a mask correction model.

2. The method according to claim 1, characterized in that The step of obtaining a plurality of test patterns corresponding to the test design pattern based on the mask design layout includes: Making a test mask based on the mask design layout; The test photosensitive material layer on the surface of the test substrate is exposed and developed based on the test mask to obtain the test pattern.

3. The method according to claim 1, characterized in that The step of obtaining the size information of each test pattern according to a preset measurement rule includes: Select multiple measurement angles; Each of the test patterns is measured at each of the measurement angles to obtain size information of each of the test patterns.

4. The method according to claim 3, characterized in that The multiple measuring angles include: 0°, 30°, 45°, 60° and 90°.

5. The method according to claim 4, characterized in that The step of performing model fitting based on the size information and the mask design layout to obtain a mask correction model includes: When there is a size deviation between the test pattern and the corresponding test design pattern, the test design pattern is corrected based on the size deviation; Repeat the above steps several times until the size deviation is eliminated to obtain the target design pattern; The mask correction model is obtained based on the target design pattern.

6. A system for establishing a mask correction model, characterized in that: include: A first acquisition module is used to acquire a mask design layout; the mask design layout includes a plurality of test design patterns arranged in a staggered manner; A second acquisition module, configured to obtain a plurality of test patterns corresponding to the test design pattern based on the mask design layout; A measuring module, used for obtaining the size information corresponding to each of the test patterns according to a preset measuring rule; The measurement rule includes at least two different measurement angles; The fitting module is used to perform model fitting based on the size information and the mask design layout to obtain a mask correction model.

7. The system according to claim 6, characterized in that The second acquisition module is further configured to: Making a test mask based on the mask design layout; The test photosensitive material layer on the surface of the test substrate is exposed and developed based on the test mask to obtain the test pattern.

8. The system according to claim 7, characterized in that The measurement module is further configured as follows: Select multiple measurement angles; Each of the test patterns is measured at each of the measurement angles to obtain size information of each of the test patterns.

9. The system according to claim 6, characterized in that The fitting module is further configured to: When there is a size deviation between the test pattern and the corresponding test design pattern, correcting the test design pattern based on the size deviation; Repeat the above steps several times until the size deviation is eliminated to obtain the target design pattern; The mask correction model is obtained based on the target design pattern.

10. A method for correcting a mask pattern, characterized in that: include: The mask correction model is obtained by using the method for establishing a mask correction model according to any one of claims 1 to 5; The mask design layout to be corrected is corrected based on the mask correction model to obtain a target mask layout.

11. A method for manufacturing a photomask, characterized in that: include: Using the method for correcting a mask layout as claimed in claim 10, a target mask layout is obtained; The target mask pattern is used for production to obtain a desired mask.

12. A photolithography method, characterized in that: include: Manufacturing a photomask using the photomask manufacturing method as claimed in claim 11; Providing a substrate, and forming a photosensitive layer on a surface of the substrate; The photosensitive material layer is exposed and developed based on the photomask to obtain a patterned mask layer.

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