Semiconductor photoelectric detector chip and preparation method thereof

Abstract

The invention relates to a photoelectric detector, particularly provides a semiconductor photoelectric detector chip and a preparation method, and aims to solve the problem of high alignment difficulty of a readout circuit chip and a detector chip. The preparation method of the semiconductor photoelectric detector chip provided by the invention comprises the following steps: providing a detector wafer which comprises a detector substrate, a first contact layer and a second contact layer; providing a readout circuit wafer having a third electrode and a fourth electrode; forming a bonding layer to bond the detector wafer and the readout circuit wafer; pixel table boards arranged in an array are formed on the detector wafer, a first isolation groove is formed between every two adjacent pixel table boards in the same array, and the first isolation grooves penetrate through the detector wafer and the bonding layer; and forming an electrode, so that the first contact layer is electrically connected with the fourth electrode and / or the second contact layer is electrically connected with the third electrode. The detector wafer and the readout circuit wafer are bonded first and then form the pixel mesa array, so that the bonding difficulty of the detector wafer and the readout circuit wafer can be greatly reduced.

Description

Technical Field

[0001] The invention relates to a photoelectric detector, and specifically provides a semiconductor photoelectric detector chip and a preparation method thereof. Background Art

[0002] The chips of photon detectors and photovoltaic detectors include detector chips and readout circuit chips, which are manufactured independently. During the manufacturing process of the detector chip and the readout circuit chip, a metal film (such as indium, copper, tin, gold, etc.) is deposited on one side of the detector chip and one side of the readout circuit chip, and then a metal electrode array of the required pattern is formed through a metal stripping process or an electroplating process. After that, the metal electrodes of the detector chip and the metal electrodes of the readout circuit chip are aligned and bonded to realize the electrical connection between the detector chip and the readout circuit chip, and finally a glue filling process is performed to fill the metal electrode array with a low-temperature resistant resin glue.

[0003] After the detector chip is flipped and bonded to the readout circuit chip, it needs to be aligned to ensure that the metal electrodes of the detector chip and the metal electrodes on the readout circuit chip are aligned, which is difficult. Especially for detector chips that integrate large-scale small pixels, the spacing between the metal electrodes is smaller and the density is higher, making alignment more difficult.

[0004] Therefore, there is an urgent need for a semiconductor photodetector chip and a preparation method to solve the problem of high difficulty in aligning the readout circuit chip and the detector chip in the existing photodetector chip. Summary of the invention

[0005] The present invention aims to solve the above technical problem, that is, to solve the problem of high difficulty in aligning the readout circuit chip and the detector chip in the chip of the existing photodetector.

[0006] In a first aspect, the present invention provides a method for preparing a semiconductor photodetector chip, comprising: providing a detector wafer, comprising a detector substrate and a detector functional layer formed on the detector substrate, wherein a layer of the detector functional layer closest to the detector substrate is a first contact layer, and a layer of the detector functional layer farthest from the detector substrate is a second contact layer; providing a readout circuit wafer, wherein one side of the readout circuit wafer has a third electrode and a fourth electrode; bonding the detector wafer and the readout circuit wafer, wherein a bonding layer is formed between the detector wafer and the readout circuit wafer, and the third electrode and the fourth electrode are located on a side of the readout circuit wafer close to the detector wafer; forming pixel mesas arranged in an array on the detector wafer, wherein a first isolation groove is provided between two adjacent pixel mesas in the same array to isolate the pixel mesas, and the first isolation groove passes through the detector wafer and the bonding layer; forming electrodes so that the first contact layer is electrically connected to the fourth electrode and / or the second contact layer is electrically connected to the third electrode.

[0007] In some exemplary embodiments, bonding the detector wafer and the readout circuit wafer includes: forming a first metal layer on one side of the detector wafer; forming a second metal layer on a side of the readout circuit wafer where a third electrode and a fourth electrode are disposed; aligning and bonding the detector wafer and the readout circuit wafer so that the first metal layer and the second metal layer are attached to form a bonding layer.

[0008] In some exemplary embodiments, the material of the bonding layer is metal, and after the detector wafer and the readout circuit wafer are bonded, the detector substrate is located on a side of the detector functional layer away from the readout circuit wafer.

[0009] In some exemplary embodiments, the preparation method further includes: thinning or removing the detector substrate before forming the pixel mesas arranged in an array on the detector wafer.

[0010] In some exemplary embodiments, in the process of forming pixel tables arranged in an array on a detector wafer, a bonding electrode is formed in a bonding layer, and the orthographic projection of the bonding electrode on the readout circuit wafer coincides with the orthographic projection of the pixel table on the readout circuit wafer; the bonding electrode is electrically connected to the third electrode, so that the second contact layer is electrically connected to the third electrode through the bonding electrode.

[0011] In some exemplary embodiments, forming an electrode includes: forming a dielectric layer in a first isolation groove; forming a transparent electrode layer on a side of the detector wafer away from the readout circuit wafer, the transparent electrode layer being electrically connected to a fourth electrode, so that the first contact layer is electrically connected to the fourth electrode through the transparent electrode layer, and the transparent electrode layer is connected to the first contact layer corresponding to at least a portion of the pixel table in the same array.

[0012] In some exemplary embodiments, electrodes are formed, including: forming a patterned dielectric layer on a side of the detector wafer away from the readout circuit wafer, the dielectric layer at least covering the first isolation groove, and the dielectric layer exposing a fourth electrode located at the bottom of the first isolation groove; forming a patterned transparent electrode layer on a side of the detector wafer away from the readout circuit wafer, the transparent electrode layer including a plurality of transparent electrodes, a second isolation groove between two adjacent transparent electrodes to isolate the transparent electrodes, the transparent electrodes corresponding one-to-one to the pixel table, the transparent electrodes covering the corresponding pixel table and extending to the fourth electrode on one side of the pixel table.

[0013] In some exemplary embodiments, after the detector wafer and the readout circuit wafer are bonded, the detector substrate is located on a side of the detector functional layer close to the readout circuit wafer.

[0014] In some exemplary embodiments, the material of the bonding layer is metal, and in the process of forming pixel tables arranged in an array on the detector wafer, the bonding layer forms a bonding electrode, and the bonding electrode and the pixel table have an orthographic projection coincident on the readout circuit wafer; the bonding electrode is electrically connected to the fourth electrode.

[0015] In some exemplary embodiments, forming an electrode includes: forming a patterned dielectric layer on a side of the detector wafer away from the readout circuit wafer, the dielectric layer at least covering the first isolation groove, and the dielectric layer exposing a third electrode located at the bottom of the first isolation groove; forming a patterned transparent electrode layer on the second contact layer, the transparent electrode layer including a plurality of transparent electrodes, a second isolation groove between two adjacent transparent electrodes to isolate the transparent electrodes, the transparent electrodes corresponding to the pixel table one by one, the transparent electrodes covering the corresponding pixel table and extending to the third electrode on one side of the pixel table.

[0016] In some exemplary embodiments, forming an electrode includes: forming an opening on a pixel table, the opening extending from a second contact layer to a first contact layer; forming a patterned first dielectric layer on a side of a detector wafer away from a readout circuit wafer, the first dielectric layer exposing a first contact layer at a bottom of the opening and a fourth electrode at a bottom of a first isolation groove; forming a first electrode on the first dielectric layer, the first electrode extending from a bottom of the opening along a side wall of the pixel table to a fourth electrode, so that the first contact layer of the pixel table is electrically connected to the fourth electrode through the first electrode; forming a second dielectric layer on the first electrode, the second dielectric layer exposing a second contact layer and a third electrode at a bottom of the first isolation groove; forming a second electrode on the second dielectric layer, the second electrode extending from the second contact layer exposed by the second dielectric layer to the third electrode along a side wall of the pixel table, so that the second contact layer in the pixel table is electrically connected to the third electrode through the second electrode.

[0017] In a second aspect, the present disclosure provides a semiconductor photodetector chip, including: a detector wafer, including a detector functional layer, the two outermost layers of the detector functional layer along the thickness direction of the detector wafer are respectively a first contact layer and a second contact layer, the detector wafer has pixel tables arranged in an array, and a first isolation groove is provided between two adjacent pixel tables in the same array to isolate the pixel tables, and the first isolation groove passes through the detector wafer along the thickness direction of the detector wafer; a readout circuit wafer, aligned with the detector wafer, and having a third electrode and a fourth electrode on one side; a bonding layer, arranged between the detector wafer and the readout circuit wafer, the first isolation groove extends to the bonding layer, and the orthographic projection of the bonding layer on the readout circuit wafer coincides with the orthographic projection of the pixel table on the readout circuit wafer; electrodes, electrically connecting the first contact layer to the fourth electrode and / or the second contact layer to the third electrode.

[0018] In some exemplary embodiments, the first contact layer is located on a side of the detector functional layer away from the readout circuit wafer; the material of the bonding layer is metal, the bonding layer includes a plurality of bonding electrodes, the bonding electrodes correspond one-to-one to the pixel table, and the bonding electrodes are electrically connected to the third electrode; the electrode is a transparent electrode and is located on a side of the first contact layer away from the readout circuit wafer, and is electrically connected to the third electrode and the first contact layer.

[0019] In some exemplary embodiments, transparent electrodes are continuously arranged to connect pixel tables located in the same array; or, transparent electrodes correspond to pixel tables one by one, and a second isolation groove is provided between two adjacent transparent electrodes to isolate the transparent electrodes; the fourth electrode is located at the bottom of the first isolation groove, and a dielectric layer is provided on the inner wall of the first isolation groove, and the dielectric layer exposes the fourth electrode located at the bottom of the first isolation groove, and the transparent electrode is located on a side of the dielectric layer away from the readout circuit wafer, and the transparent electrode extends from a surface of a side of the pixel table away from the readout circuit wafer along the side wall of the pixel table to the fourth electrode, so that the fourth electrode and the first contact layer are electrically connected through the transparent electrode.

[0020] In some exemplary embodiments, the first contact layer is located on a side of the detector functional layer close to the readout circuit wafer.

[0021] In some exemplary embodiments, the material of the bonding layer is metal, the bonding layer includes a plurality of bonding electrodes, the bonding electrodes correspond to the pixel mesas one-to-one, and the bonding electrodes are electrically connected to the fourth electrode; the electrodes correspond to the pixel mesas one-to-one, and a second isolation groove is provided between two adjacent electrodes to isolate the electrodes; the third electrode is located at the bottom of the first isolation groove, and a dielectric layer is provided on the inner wall of the first isolation groove, the dielectric layer exposes the third electrode, and the electrode is located on a side of the dielectric layer away from the readout circuit wafer, and the electrode extends from a surface of a side of the pixel mesas away from the readout circuit wafer along the side wall of the pixel mesas to the third electrode located at the bottom of the first isolation groove, so that the third electrode and the second contact layer are electrically connected through the electrode.

[0022] In some exemplary embodiments, at least a portion of the pixel table is provided with an opening, and the opening extends from the second contact layer to the first contact layer; the third electrode and the fourth electrode are located at the bottom of the first isolation groove; the first dielectric layer, the first electrode, the second dielectric layer and the second electrode are sequentially provided on the side of the detector wafer away from the readout circuit wafer, the first electrode is electrically connected to the first contact layer and the fourth electrode at the bottom of the opening through a via hole, and the second electrode is electrically connected to the second contact layer and the third electrode through a via hole.

[0023] In some exemplary embodiments, a detector substrate is disposed on a side of the first contact layer away from the second contact layer.

[0024] In a third aspect, the present disclosure provides a photodetector chip obtained by slicing a semiconductor photodetector chip manufactured by the above-mentioned method for manufacturing a semiconductor photodetector chip, or obtained by slicing the above-mentioned semiconductor photodetector chip.

[0025] Compared with the prior art, the present invention has the following beneficial effects: The present invention provides a method for preparing a semiconductor photodetector chip, including: providing a detector wafer, including a detector substrate, a first contact layer and a second contact layer; providing a readout circuit wafer, having a third electrode and a fourth electrode; bonding the detector wafer and the readout circuit wafer, wherein a bonding layer is formed between the detector wafer and the readout circuit wafer; forming a pixel table arranged in an array on the detector wafer, wherein a first isolation groove is provided between two adjacent pixel tables in the same array to isolate the pixel tables, and the first isolation groove runs through the detector wafer and the bonding layer; forming electrodes so that the first contact layer is electrically connected to the fourth electrode and / or the second contact layer is electrically connected to the third electrode. The detector wafer and the readout circuit wafer are bonded first, and then the pixel table array is formed, which can greatly reduce the difficulty of bonding the detector wafer and the readout circuit wafer, and helps to improve the process accuracy and reliability. In addition, the formed photodetector chip no longer has a detector substrate or the detector substrate is discontinuous, and the detector substrate will no longer have a mismatch in thermal expansion coefficients and cause fragmentation. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings, in which: Figure 1 to Figure 2 is a cross-sectional view of a semiconductor photodetector provided by at least one embodiment of the present disclosure during the preparation process; Figure 3 is a first cross-sectional view of a semiconductor photodetector provided by at least one embodiment of the present disclosure; Figure 4 is a second cross-sectional view of a semiconductor photodetector provided by at least one embodiment of the present disclosure; Figure 5 is a third cross-sectional view of a semiconductor photodetector provided by at least one embodiment of the present disclosure; Figure 6 is a fourth cross-sectional view of a semiconductor photodetector provided by at least one embodiment of the present disclosure; Figure 7 is a cross-sectional view of a semiconductor photodetector provided by at least one embodiment of the present disclosure during the preparation process; Figure 8 This is a fifth cross-sectional view of the semiconductor photodetector provided by at least one embodiment of the present disclosure.

[0027] Explanation of the accompanying drawings: 10, detector wafer; 1, detector substrate; 2, detector functional layer; 21, first contact layer; 22, second contact layer; 23, barrier layer; 24, absorption layer; 3, pixel table; 31, opening; 4, first isolation groove; 51, dielectric layer; 52, transparent electrode layer; 520, transparent electrode; 521, second isolation groove; 53, first dielectric layer; 54, first electrode; 55, second dielectric layer; 56, second electrode; 20, readout circuit wafer; 201, third electrode; 202, fourth electrode; 30, bonding layer; 301, first metal layer; 302, second metal layer; 300, bonding electrode. DETAILED DESCRIPTION

[0028] The preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the protection scope of the present invention.

[0029] It should be noted that in the description of the present invention, the terms "upper", "lower", "left", "right", "inner", "outer" and the like indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings, which are only for the convenience of description, and do not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0030] In addition, it should be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "installation", "setting", and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, an indirect connection through an intermediate medium, or the internal connection of two components. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0031] The chips of the photon detector and the photovoltaic detector include a detector chip and a readout circuit chip. The detector chip and the readout circuit chip are manufactured independently, and then the detector chip is bonded to the readout circuit chip by flip-chip bonding to be electrically connected.

[0032] The detector chip includes a detector substrate and a detector functional layer, wherein the detector functional layer is provided with pixel tables arranged in an array, a first electrode is provided on a side of each pixel table away from the substrate, and the first electrode is electrically connected to the corresponding pixel table. The detector substrate forms a second electrode along the side wall of the outermost pixel table, so that the second electrode extends to the top of the outermost pixel table, and the second electrode is electrically connected to the detector substrate.

[0033] A third electrode and a fourth electrode are disposed on one side of the readout circuit chip.

[0034] During the bonding process between the detector chip and the readout circuit chip, the first electrode needs to be aligned with the third electrode to form an electrical connection, and the second electrode needs to be aligned with the fourth electrode to form an electrical connection. With the improvement of process precision, the size of the pixel table is smaller and the number is more, the number of first electrodes is also increasing and becoming more and more dense, the bonding alignment is more difficult, and it is difficult to prepare a chip of a photodetector with a high-density, large-scale pixel table array.

[0035] In addition, since all pixel tables are connected to the fourth electrode of the readout circuit chip through the detector substrate and the second electrode electrically connected to the detector substrate, there is crosstalk between different pixel tables, that is, the photocurrent signal in a certain pixel table will affect the signal in the adjacent pixel table.

[0036] In addition, some detector chips work in a low-temperature environment, and there may be a mismatch in thermal expansion coefficients between the detector substrate and the readout circuit substrate, which can easily lead to fragmentation.

[0037] In view of this, an embodiment of the present disclosure provides a method for preparing a semiconductor photodetector chip, the method comprising: providing a detector wafer, comprising a detector substrate and a detector functional layer formed on the detector substrate, wherein a layer of the detector functional layer closest to the detector substrate is a first contact layer, and a layer of the detector functional layer farthest from the detector substrate is a second contact layer; providing a readout circuit wafer, one side of the readout circuit wafer having a third electrode and a fourth electrode; bonding the detector wafer and the readout circuit wafer, wherein a bonding layer is formed between the detector wafer and the readout circuit wafer, and the third electrode and the fourth electrode are located on a side of the readout circuit wafer close to the detector wafer; forming pixel mesas arranged in an array on the detector wafer, a first isolation groove being provided between two adjacent pixel mesas in the same array to isolate the pixel mesas, and the first isolation groove passing through the detector wafer and the bonding layer; forming electrodes so that the first contact layer is electrically connected to the fourth electrode and / or the second contact layer is electrically connected to the third electrode.

[0038] The present disclosure is specifically described with the following embodiments.

[0039] Embodiment 1 The present disclosure provides a method for preparing a semiconductor photodetector, comprising: S1. Provide a detector wafer 10.

[0040] like Figure 1As shown, the detector wafer 10 includes a detector substrate 1 and a detector functional layer 2 formed on the detector substrate 1, wherein a layer of the detector functional layer 2 closest to the detector substrate 1 is a first contact layer 21, and a layer of the detector functional layer 2 farthest from the detector substrate 1 is a second contact layer 22. For example, the detector substrate 1 is an N-type GaSb semiconductor, but is not limited thereto.

[0041] S2. Provide a readout circuit wafer 20.

[0042] One side of the readout circuit wafer 20 has a third electrode 201 and a fourth electrode 202. For example, the third electrode 201 is a positive electrode, and the fourth electrode 202 is a negative electrode or a ground electrode.

[0043] S3, bonding the detector wafer 10 and the readout circuit wafer 20. Figure 1 As shown, it specifically includes: S31, forming a first metal layer 301 on the side of the detector functional layer 2 away from the detector substrate 1; S32, forming a second metal layer 302 on the side of the readout short-circuit wafer where the third electrode 201 and the fourth electrode 202 are set; S33, aligning the detector wafer 10 and the readout circuit wafer 20 to make the first metal layer 301 and the second metal layer 302 contact; S34, heating and applying pressure in the bonding equipment to soften and fuse the first metal layer 301 and the second metal layer 302 under high temperature and high pressure to form a bonding layer 30.

[0044] It should be particularly noted that since the first metal layer 301 is formed on the side of the detector functional layer 2 away from the detector substrate 1, after the detector wafer 10 and the readout circuit wafer 20 are bonded, the detector substrate 1 is located on the side of the detector functional layer 2 away from the readout circuit wafer 20, and the detector wafer 10 is flip-chip soldered on the readout circuit wafer 20.

[0045] S4, thinning or removing the detector substrate 1. For example, the detector substrate 1 is thinned or completely removed by using CMP (chemical mechanical polishing).

[0046] S5, forming pixel tables 3 arranged in an array on the detector wafer 10. Figure 2 As shown, a first isolation groove 4 is provided between two adjacent pixel mesas 3 in the same array to isolate the two adjacent pixel mesas 3 , and the first isolation groove 4 penetrates the detector wafer 10 and the bonding layer 30 .

[0047] For example, a plurality of pixel table arrays are formed on the same detector wafer 10 to improve the manufacturing efficiency.

[0048] For example, the detector wafer 10 is patterned by using a patterning process, wherein the patterning process includes processes such as photoresist formation, photolithography, development, photolithography pattern detection, etching, and photoresist removal.

[0049] For example, after forming the pixel mesas 3 arranged in an array on the detector wafer 10, the bonding layer 30 is etched by IBE (Ion Beam Etching) so that the first isolation groove 4 extends to the bonding layer 30, thereby forming the bonding electrode 300. For example, the orthographic projection of the bonding electrode 300 on the readout circuit wafer 20 coincides with the orthographic projection of the pixel mesas 3 on the readout circuit wafer 20.

[0050] In addition, in the process of forming the pixel table 3 arranged in an array on the detector wafer 10, alignment is required so that the formed pixel table 3 can cover the top of the third electrode 201, and each pixel table 3 corresponds to a third electrode 201, and the second contact layer 22 on each pixel table 3 can be electrically connected to the third electrode 201 through the corresponding bonding electrode 300.

[0051] S6. Form a dielectric layer 51 in the first isolation trench 4. For example, the dielectric layer 51 is made of silicon oxide, silicon nitride, or the like.

[0052] S7. A transparent electrode layer 52 is formed on the side of the detector wafer 10 away from the readout circuit wafer 20. The transparent electrode layer 52 is disposed on the entire surface to connect to the first contact layer 21 corresponding to at least a portion of the pixel mesas 3 in the same array. In addition, the transparent electrode layer 52 is electrically connected to the fourth electrode 202, so that the first contact layer 21 is electrically connected to the fourth electrode 202 through the transparent electrode layer 52.

[0053] For example, Figure 3 As shown, the fourth electrode 202 is located outside the pixel table array. In the process of forming the pixel table 3 on the detector wafer 10 in step S5, the detector wafer 10 between adjacent pixel table arrays is removed so that the edge of the pixel table array can expose the fourth electrode 202. In the process of forming the transparent electrode layer 52 in step S7, the transparent electrode layer 52 is extended along the side wall of the outermost pixel table 3 in the pixel table array to the fourth electrode 202 of the readout circuit wafer 20, so that the first contact layer 21 of the pixel table array is electrically connected to the fourth electrode 202 through the transparent electrode layer 52. In addition, in the process of forming the dielectric layer 51 in the first isolation groove 4 in step S6, a dielectric layer 51 can also be formed on the outer side of the outermost pixel table 3 in the pixel table array to prevent the transparent electrode layer 52 from being electrically connected to the side wall of the outermost pixel table 3.

[0054] For example, Figure 4As shown, the fourth electrode 202 is located at the bottom of at least one first isolation groove 4. Before step S7, the dielectric layer 51 in the first isolation groove 4 where the fourth electrode 202 is disposed is patterned to expose the fourth electrode 202. Thereafter, in the process of forming the transparent electrode layer 52 in step S7, the transparent electrode layer 52 can enter the first isolation groove 4 and be electrically connected to the fourth electrode 202.

[0055] S8. Form a microlens array (not shown in the figure) on a side of the detector wafer 10 away from the readout circuit wafer 20 .

[0056] S9, dicing the detector wafer 10 and the readout circuit wafer 20 to obtain a single photodetector chip.

[0057] The above method for preparing semiconductor photodetector chips has at least the following advantages: 1. The detector wafer 10 and the readout circuit wafer 20 are bonded first, and then a pixel table array is formed, which can greatly reduce the difficulty of bonding the detector wafer 10 and the readout circuit wafer 20, and help to improve the process accuracy and reliability; 2. The formed photodetector chip no longer has the detector substrate 1 or the detector substrate 1 is discontinuous, and the detector substrate 1 will no longer have a mismatch in thermal expansion coefficients and cause breakage.

[0058] The present disclosure also provides a semiconductor photodetector chip. Figure 3 As shown, the detector wafer 10 and the readout circuit wafer 20 are aligned with each other, the detector wafer 10 is flip-chip connected to the readout circuit wafer 20, and a bonding layer 30 of a metal material is arranged between the detector wafer 10 and the readout circuit wafer 20 to bond the detector wafer 10 and the readout circuit wafer 20. After the detector wafer 10 and the readout circuit wafer 20 of the semiconductor photodetector chip are diced, a photodetector chip can be obtained.

[0059] The detector wafer 10 includes a detector functional layer 2. For example, the detector functional layer 2 includes a first contact layer 21, a functional layer, and a second contact layer 22 arranged in sequence in a direction away from the detector substrate 1, and the first contact layer 21 is located on a side of the detector functional layer 2 away from the readout circuit wafer 20. The functional layer includes an absorption layer 24 and a barrier layer 23 designed according to the target detection band. The barrier layer 23 is located between the absorption layer 24 and the first contact layer 21.

[0060] The detector wafer 10 has a plurality of pixel table arrays, each pixel table array including a pixel table 3 arranged in an array. A first isolation groove 4 is provided between two adjacent pixel tables 3 in the same array to isolate the pixel tables 3. The first isolation groove 4 penetrates the bonding layer 30, so that the first isolation groove 4 exposes the readout circuit wafer 20. The bonding layer 30 is divided into a plurality of bonding electrodes 300 by the first isolation groove 4, and the bonding electrodes 300 correspond to the pixel tables 3 one by one.

[0061] The first isolation groove 4 is filled with a dielectric layer 51 to electrically isolate two adjacent pixel mesas 3 and two adjacent bonding electrodes 300 .

[0062] The readout circuit wafer 20 has a third electrode 201 and a fourth electrode 202 on one side close to the detector wafer 10 . The bonding electrode 300 covers the third electrode 201 , so that the third electrode 201 is electrically connected to the second contact layer 22 through the bonding electrode 300 .

[0063] In some examples, such as Figure 3 As shown, the fourth electrode 202 is located outside the pixel table array. A continuous transparent electrode layer 52 is provided on the side of the detector wafer 10 away from the readout circuit wafer 20, and the transparent electrode layer 52 extends along the side wall of the outermost pixel table 3 in the pixel table array to the readout circuit wafer 20 and is electrically connected to the fourth electrode 202.

[0064] In other examples, such as Figure 4 As shown, the fourth electrode 202 is located at the bottom of at least a portion of the first isolation groove 4. An opening 31 exposing the fourth electrode 202 is provided on the dielectric layer 51 in the first isolation groove 4. A continuous transparent electrode layer 52 is provided on the side of the detector wafer 10 away from the readout circuit wafer 20, and the transparent electrode layer 52 enters the first isolation groove 4 and extends to the fourth electrode 202.

[0065] For example, the first contact layer 21 has a detector substrate 1 on a side away from the detector wafer 10 . At this time, the transparent electrode layer 52 is electrically connected to the first contact layer 21 through the detector substrate 1 .

[0066] When the photodetector chip is working, the pixel table 3 generates an electric signal after receiving the infrared signal, and forms a voltage difference between the first contact layer 21 and the second contact layer 22. The first contact layer 21 is connected to the fourth electrode 202 through the transparent electrode layer 52, and the second contact layer 22 is connected to the third electrode 201 through the bonding electrode 300, so as to be read by the readout circuit.

[0067] Embodiment 2 The embodiment of the present disclosure provides a method for preparing a semiconductor photodetector chip, which is the same as steps S1 to S5 in the method for preparing a semiconductor photodetector chip provided in the first embodiment, except that a fourth electrode 202 is provided at the bottom of each first isolation trench 4 .

[0068] After step S1 to step S5, the method further includes: S6. Form a patterned dielectric layer 51 on a side of the detector wafer 10 away from the readout circuit wafer 20 , wherein the dielectric layer 51 at least covers the first isolation trench 4 and exposes the fourth electrode 202 at the bottom of the first isolation trench 4 .

[0069] S7, forming a patterned transparent electrode layer 52 (such as Figure 5 ). The transparent electrode layer 52 includes a plurality of transparent electrodes 520, and a second isolation groove 521 is provided between two adjacent transparent electrodes 520 to isolate the two adjacent transparent electrodes 520. The transparent electrodes 520 correspond to the pixel table 3 one by one, and the transparent electrodes 520 cover the pixel table 3 and extend along one side of the pixel table 3 to the fourth electrode 202 at the bottom of the first isolation groove 4.

[0070] S8 , forming a dielectric layer on the transparent electrode layer 52 to fill the second isolation groove 521 .

[0071] S9. Form a microlens array (not shown in the figure) on a side of the detector wafer 10 away from the readout circuit wafer 20 .

[0072] S10 , dicing the detector wafer 10 and the readout circuit wafer 20 to obtain a single photodetector chip.

[0073] The above method for preparing semiconductor photodetector chips has at least the following advantages: 1. The detector wafer 10 and the readout circuit wafer 20 are bonded first, and then the pixel table array is formed, which can greatly reduce the difficulty of bonding the detector wafer 10 and the readout circuit wafer 20, and help to improve the process accuracy and reliability; 2. The formed photodetector chip no longer has the detector substrate 1 or the detector substrate 1 is discontinuous, and the detector substrate 1 will no longer have a mismatch in thermal expansion coefficients and cause breakage; 3. Each pixel table 3 can be connected to the readout circuit through an independent transparent electrode 520, without the need for a common electrode, and there is no crosstalk in the signal transmission between two adjacent pixel tables 3; in addition, since there is no need to share electrodes between different pixel tables 3, the transmission distance from the pixel table 3 to the fourth electrode 202 through the transparent electrode 520 is short, and no delay (such as RC delay) will occur.

[0074] The present disclosure also provides a semiconductor photodetector chip, which has a substantially similar structure to the semiconductor photodetector chip provided in the first embodiment, except that: Figure 5 As shown, the fourth electrode 202 is located at the bottom of the first isolation groove 4, and the transparent electrode layer 52 includes a plurality of transparent electrodes 520, the transparent electrodes 520 correspond to the pixel table 3 one by one, and a second isolation groove 521 is provided between two adjacent transparent electrodes 520 to isolate the two adjacent transparent electrodes 520. The transparent electrode 520 covers the pixel table 3 and extends along one side of the pixel table 3 to the fourth electrode 202 at the bottom of the first isolation groove 4.

[0075] For example, the first contact layer 21 has a detector substrate 1 on a side away from the detector wafer 10 . At this time, the transparent electrode layer 52 is electrically connected to the first contact layer 21 through the detector substrate 1 .

[0076] Embodiment 3 The present disclosure provides a method for preparing a semiconductor photodetector. Figure 6 As shown, including: S1. Provide a detector wafer 10.

[0077] The detector wafer 10 includes a detector substrate 1 and a detector functional layer 2 formed on the detector substrate 1, wherein a layer of the detector functional layer 2 closest to the detector substrate 1 is a first contact layer 21, and a layer of the detector functional layer 2 farthest from the detector substrate 1 is a second contact layer 22. For example, the detector substrate 1 is an N-type GaSb semiconductor, but is not limited thereto.

[0078] S2. Provide a readout circuit wafer 20.

[0079] One side of the readout circuit wafer 20 has a third electrode 201 and a fourth electrode 202. For example, the third electrode 201 is a positive electrode, and the fourth electrode 202 is a negative electrode or a ground electrode.

[0080] S3, bonding the detector wafer 10 and the readout circuit wafer 20. Specifically, it includes: S31, forming a first metal layer 301 on the side of the detector substrate 1 away from the detector functional layer 2; S32, forming a second metal layer 302 on the side of the readout short-circuit wafer where the third electrode 201 and the fourth electrode 202 are set; S33, aligning the detector wafer 10 and the readout circuit wafer 20, so that the first metal layer 301 and the second metal layer 302 are in contact; S34, heating and applying pressure in the bonding equipment, so that the first metal layer 301 and the second metal layer 302 are softened and fused under high temperature and high pressure to form a bonding layer 30.

[0081] It should be noted that, since the first metal layer 301 is formed on the side of the detector substrate 1 away from the detector functional layer 2, after the detector wafer 10 and the readout circuit wafer 20 are bonded, the detector substrate 1 is located on the side of the detector functional layer 2 close to the readout circuit wafer 20, and the detector wafer 10 is mounted upright on the readout circuit wafer 20. The advantage of the detector wafer 10 being mounted upright compared to the flip-chip is that the pixel table 3 does not need to pass through the detector substrate 1 when receiving the optical signal, so the quantum efficiency of the photodetector is higher; in addition, since the pixel table 3 does not need to pass through the detector substrate 1 when receiving the optical signal, there is no need to thin the detector substrate 1, which can simplify the preparation process.

[0082] S4. Pixel mesas 3 arranged in an array are formed on the detector wafer 10 , and a first isolation groove 4 is provided between two adjacent pixel mesas 3 in the same array to isolate the two adjacent pixel mesas 3 . The first isolation groove 4 penetrates the detector wafer 10 and the bonding layer 30 .

[0083] For example, a plurality of pixel table arrays are formed on the same detector wafer 10 to improve the manufacturing efficiency.

[0084] For example, the detector wafer 10 is patterned by using a patterning process, wherein the patterning process includes processes such as photoresist formation, photolithography, development, photolithography pattern detection, etching, and photoresist removal.

[0085] For example, after forming the pixel mesas 3 arranged in an array on the detector wafer 10, the bonding layer 30 is etched by IBE (Ion Beam Etching) so that the first isolation groove 4 extends to the bonding layer 30, thereby forming the bonding electrode 300. For example, the orthographic projection of the bonding electrode 300 on the readout circuit wafer 20 coincides with the orthographic projection of the pixel mesas 3 on the readout circuit wafer 20.

[0086] In addition, in the process of forming the pixel mesas 3 arranged in an array on the detector wafer 10, alignment is required so that the formed pixel mesas 3 can cover the fourth electrode 202, and the third electrode 201 is located at the bottom of the first isolation groove 4. Each pixel mesas 3 corresponds to a fourth electrode 202, and the first contact layer 21 on each pixel mesas 3 can be electrically connected to the fourth electrode 202 through the corresponding bonding electrode 300.

[0087] S5. Form a patterned dielectric layer 51 on a side of the detector wafer 10 away from the readout circuit wafer 20 , wherein the dielectric layer 51 at least covers the first isolation trench 4 and exposes the third electrode 201 at the bottom of the first isolation trench 4 .

[0088] S6. A patterned transparent electrode layer 52 is formed on the side of the detector wafer 10 away from the readout circuit wafer 20. The transparent electrode layer 52 includes a plurality of transparent electrodes 520. A second isolation groove 521 is provided between two adjacent transparent electrodes 520 to isolate the two adjacent transparent electrodes 520. The transparent electrodes 520 correspond to the pixel table 3 one by one. The transparent electrodes 520 cover the pixel table 3 and extend along one side of the pixel table 3 to the third electrode 201 at the bottom of the first isolation groove 4.

[0089] S7 . Form a dielectric layer on the transparent electrode layer 52 to fill the second isolation groove 521 .

[0090] S8. Form a microlens array (not shown in the figure) on a side of the detector wafer 10 away from the readout circuit wafer 20 .

[0091] S9, dicing the detector wafer 10 and the readout circuit wafer 20 to obtain a single photodetector chip.

[0092] The above method for preparing semiconductor photodetector chip has at least the following advantages: 1. The detector wafer 10 and the readout circuit wafer 20 are bonded first, and then the pixel table array is formed, which can greatly reduce the difficulty of bonding the detector wafer 10 and the readout circuit wafer 20, and help to improve the process accuracy and reliability; 2. The formed photodetector chip no longer has the detector substrate 1 or the detector substrate 1 is discontinuous, and the detector substrate 1 will no longer have the situation of thermal expansion coefficient mismatch and cause breakage; 3. Each pixel table 3 can be connected to the readout circuit through an independent transparent electrode 520, without the need for a common electrode, There is no crosstalk in the signal transmission between two adjacent pixel tables 3; in addition, since different pixel tables 3 do not need to share electrodes, the transmission distance from the pixel table 3 to the fourth electrode 202 through the transparent electrode 520 is short, and no delay (such as RC delay) will occur; 4. The detector wafer 10 is mounted on the readout circuit wafer 20, and the pixel table 3 does not need to pass through the detector substrate 1 when receiving the optical signal, so the quantum efficiency of the photodetector is higher; in addition, since the pixel table 3 does not need to pass through the detector substrate 1 when receiving the optical signal, there is no need to thin the detector substrate 1, which can simplify the preparation process.

[0093] The present disclosure also provides a semiconductor photodetector chip. Figure 6 As shown, the detector wafer 10 and the readout circuit wafer 20 are aligned with each other, and the detector wafer 10 is mounted on the detector wafer 10. A bonding layer 30 is provided between the detector wafer 10 and the readout circuit wafer 20 to bond the detector wafer 10 and the readout circuit wafer 20. After the detector wafer 10 and the readout circuit wafer 20 of the semiconductor photodetector chip are diced, a photodetector chip can be obtained.

[0094] The detector wafer 10 includes a detector functional layer 2 and a detector substrate 1, wherein the detector substrate 1 is located on a side of the detector functional layer 2 close to the readout circuit wafer 20 (i.e., the detector wafer 10 is mounted on the detector wafer 10). For example, the detector functional layer 2 includes a first contact layer 21, a functional layer, and a second contact layer 22 which are sequentially arranged in a direction away from the detector substrate 1, and the first contact layer 21 is located on a side of the detector functional layer 2 close to the detector substrate 1.

[0095] The detector wafer 10 has a plurality of pixel table arrays, each pixel table array including a pixel table 3 arranged in an array. A first isolation groove 4 is provided between two adjacent pixel tables 3 of the same array to isolate the pixel tables 3. The first isolation groove 4 penetrates the bonding layer 30 so that the first isolation groove 4 exposes the readout circuit wafer 20. The bonding layer 30 is made of metal, and the bonding layer 30 is divided into a plurality of bonding electrodes 300 by the first isolation groove 4, and the bonding electrodes 300 correspond to the pixel tables 3 one by one.

[0096] The readout circuit wafer 20 has a third electrode 201 and a fourth electrode 202 on one side close to the detector wafer 10. The bonding electrode 300 covers the fourth electrode 202, so that the fourth electrode 202 is electrically connected to the first contact layer 21 through the bonding electrode 300 and the detector substrate 1. The third electrode 201 is located at the bottom of the first isolation trench 4.

[0097] The first isolation groove 4 is filled with a dielectric layer 51 to electrically isolate two adjacent pixel mesas 3 and two adjacent bonding electrodes 300 , and the dielectric layer 51 exposes the third electrode 201 .

[0098] A transparent electrode layer 52 is provided on one side of the detector wafer 10 away from the readout circuit wafer 20. The transparent electrode layer 52 includes a plurality of transparent electrodes 520. The transparent electrodes 520 correspond to the pixel table 3 one by one. A second isolation groove 521 is provided between two adjacent transparent electrodes 520 to isolate the two adjacent transparent electrodes 520. The transparent electrode 520 covers the pixel table 3 and extends along one side of the pixel table 3 to the third electrode 201 at the bottom of the first isolation groove 4, so that the second contact layer 22 is electrically connected to the third electrode 201 through the transparent electrode 520.

[0099] Embodiment 4 The present disclosure provides a method for preparing a semiconductor photodetector. Figure 7 As shown, including: S1. Provide a detector wafer 10.

[0100] The detector wafer 10 includes a detector substrate 1 and a detector functional layer 2 formed on the detector substrate 1, wherein a layer of the detector functional layer 2 closest to the detector substrate 1 is a first contact layer 21, and a layer of the detector functional layer 2 farthest from the detector substrate 1 is a second contact layer 22. For example, the detector substrate 1 is an N-type GaSb semiconductor, but is not limited thereto.

[0101] S2. Provide a readout circuit wafer 20.

[0102] One side of the readout circuit wafer 20 has a third electrode 201 and a fourth electrode 202. For example, the third electrode 201 is a positive electrode, and the fourth electrode 202 is a negative electrode or a ground electrode.

[0103] S3, bonding the detector wafer 10 and the readout circuit wafer 20, and the detector substrate 1 is located on the side of the detector functional layer 2 close to the readout short-circuit wafer, that is, the detector wafer 10 is mounted on the readout circuit wafer 20. A bonding layer 30 is set between the detector wafer 10 and the readout circuit wafer 20, and the material of the bonding layer 30 can be metal or non-metal.

[0104] S4. Pixel mesas 3 arranged in an array are formed on the detector wafer 10 , and a first isolation groove 4 is provided between two adjacent pixel mesas 3 in the same array to isolate the two adjacent pixel mesas 3 . The first isolation groove 4 penetrates the detector wafer 10 and the bonding layer 30 .

[0105] For example, a plurality of pixel table arrays are formed on the same detector wafer 10 to improve the manufacturing efficiency.

[0106] For example, the detector wafer 10 is patterned by using a patterning process, wherein the patterning process includes processes such as photoresist formation, photolithography, development, photolithography pattern detection, etching, and photoresist removal.

[0107] For example, after forming the pixel mesas 3 arranged in an array on the detector wafer 10, the bonding layer 30 is etched by IBE (Ion Beam Etching) so that the first isolation groove 4 extends to the bonding layer 30, thereby forming the bonding electrode 300. For example, the orthographic projection of the bonding electrode 300 on the readout circuit wafer 20 coincides with the orthographic projection of the pixel mesas 3 on the readout circuit wafer 20.

[0108] In addition, in the process of forming the pixel mesas 3 arranged in an array on the detector wafer 10 , alignment is required so that the third electrode 201 and the fourth electrode 202 are both located at the bottom of the first isolation groove 4 .

[0109] S4, using a patterning process to form an opening 31 on the pixel table 3, the opening 31 extending from the second contact layer 22 to the first contact layer 21 (such as Figure 7 as shown).

[0110] S5 . Form a patterned first dielectric layer 53 on a side of the detector wafer 10 away from the readout circuit wafer 20 . The first dielectric layer 53 exposes the first contact layer 21 at the bottom of the opening 31 and the fourth electrode 202 at the bottom of the first isolation trench 4 .

[0111] S6, such as Figure 8 As shown, a first electrode 54 is formed on the first dielectric layer 53 by a patterning process, and the first electrode 54 extends from the bottom of the opening 31 along the side wall of the pixel table 3 to the fourth electrode 202, so that the first contact layer 21 of the pixel table 3 is electrically connected to the fourth electrode 202 through the first electrode 54.

[0112] S7 . Form a second dielectric layer 55 on the first electrode 54 . The second dielectric layer 55 covers the first electrode 54 and the first isolation trench 4 , and exposes the second contact layer 22 and the third electrode 201 at the bottom of the first isolation trench 4 .

[0113] S8. Form a second electrode 56 on the second dielectric layer 55. The second electrode 56 extends from the second contact layer 22 exposed from the second dielectric layer 55 along the side wall of the pixel table 3 to the third electrode 201, so that the second contact layer 22 in the pixel table 3 is electrically connected to the third electrode 201 through the second electrode 56.

[0114] S9. Form a microlens array (not shown in the figure) on a side of the detector wafer 10 away from the readout circuit wafer 20 .

[0115] S10 , dicing the detector wafer 10 and the readout circuit wafer 20 to obtain a single photodetector chip.

[0116] The present disclosure also provides a semiconductor photodetector chip. Figure 8 As shown, the detector wafer 10 and the readout circuit wafer 20 are aligned with each other, and the detector wafer 10 is mounted on the detector wafer 10. A bonding layer 30 is provided between the detector wafer 10 and the readout circuit wafer 20 to bond the detector wafer 10 and the readout circuit wafer 20. After the detector wafer 10 and the readout circuit wafer 20 of the semiconductor photodetector chip are diced, a photodetector chip can be obtained.

[0117] The detector wafer 10 includes a detector functional layer 2 and a detector substrate 1, wherein the detector substrate 1 is located on a side of the detector functional layer 2 close to the readout circuit wafer 20 (i.e., the detector wafer 10 is mounted on the detector wafer 10). For example, the detector functional layer 2 includes a first contact layer 21, a functional layer, and a second contact layer 22 which are sequentially arranged in a direction away from the detector substrate 1, and the first contact layer 21 is located on a side of the detector functional layer 2 close to the detector substrate 1.

[0118] The detector wafer 10 has a plurality of pixel table arrays, each pixel table array including pixel tables 3 arranged in an array. A first isolation groove 4 is provided between two adjacent pixel tables 3 in the same array to isolate the pixel tables 3. The first isolation groove 4 penetrates the bonding layer 30 so that the first isolation groove 4 exposes the readout circuit wafer 20. For example, the material of the bonding layer 30 is metal or non-metal.

[0119] The readout circuit wafer 20 has a third electrode 201 and a fourth electrode 202 on one side close to the detector wafer 10 . The third electrode 201 and the fourth electrode 202 are both located at the bottom of the first isolation trench 4 .

[0120] At least a portion of the pixel mesas 3 are provided with openings 31 , and the openings 31 extend from the second contact layer 22 to the first contact layer 21 .

[0121] A first dielectric layer 53, a first electrode 54, a second dielectric layer 55 and a second electrode 56 are sequentially arranged on the side of the detector wafer 10 away from the readout circuit wafer 20. The first electrode 54 is electrically connected to the first contact layer 21 and the fourth electrode 202 located at the bottom of the opening 31 through a via hole, and the second electrode 56 is electrically connected to the second contact layer 22 and the third electrode 201 through a via hole.

[0122] So far, the technical solutions of the present invention have been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it is easy for those skilled in the art to understand that the protection scope of the present invention is obviously not limited to these specific embodiments. Without departing from the principle of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present invention.

Claims

1. A method for preparing a semiconductor photodetector chip, It is characterized in that include: A detector wafer (10) is provided, comprising a detector substrate (1) and a detector functional layer (2) formed on the detector substrate (1), wherein a layer of the detector functional layer (2) closest to the detector substrate (1) is a first contact layer (21), and a layer of the detector functional layer (2) farthest from the detector substrate (1) is a second contact layer (22); Providing a readout circuit wafer (20), wherein one side of the readout circuit wafer (20) has a third electrode (201) and a fourth electrode (202); Bonding the detector wafer (10) and the readout circuit wafer (20), wherein a bonding layer (30) is formed between the detector wafer (10) and the readout circuit wafer (20), and the third electrode (201) and the fourth electrode (202) are located on a side of the readout circuit wafer (20) close to the detector wafer (10); Pixel mesas (3) arranged in an array are formed on the detector wafer (10), and a first isolation groove (4) is provided between two adjacent pixel mesas (3) in the same array to isolate the pixel mesas (3), and the first isolation groove (4) penetrates the detector wafer (10) and the bonding layer (30); Electrodes are formed so that the first contact layer (21) is electrically connected to the fourth electrode (202) and / or the second contact layer (22) is electrically connected to the third electrode (201).

2. The method for preparing a semiconductor photodetector chip according to claim 1, It is characterized in that The material of the bonding layer (30) is metal, and after the detector wafer (10) and the readout circuit wafer (20) are bonded, the detector substrate (1) is located on a side of the detector functional layer (2) away from the readout circuit wafer (20).

3. The method for preparing a semiconductor photodetector chip according to claim 2, It is characterized in that The preparation method further comprises: Before forming the pixel mesas (3) arranged in an array on the detector wafer (10), the detector substrate (1) is thinned or removed.

4. The method for preparing a semiconductor photodetector chip according to claim 2, It is characterized in that In the process of forming pixel mesas (3) arranged in an array on the detector wafer (10), a bonding electrode (300) is formed in the bonding layer (30), and the orthographic projection of the bonding electrode (300) on the readout circuit wafer (20) and the orthographic projection of the pixel mesas (3) on the readout circuit wafer (20) overlap; The bonding electrode (300) is electrically connected to the third electrode (201), so that the second contact layer (22) is electrically connected to the third electrode (201) through the bonding electrode (300).

5. The method for preparing a semiconductor photodetector chip according to claim 4, It is characterized in that Forming an electrode, comprising: forming a dielectric layer (51) in the first isolation trench (4); A transparent electrode layer (52) is formed on a side of the detector wafer (10) away from the readout circuit wafer (20), the transparent electrode layer (52) being electrically connected to the fourth electrode (202), so that the first contact layer (21) and the fourth electrode (202) are electrically connected via the transparent electrode layer (52), and the transparent electrode layer (52) is connected to the first contact layer (21) corresponding to at least a portion of the pixel mesas (3) located in the same array.

6. The method for preparing a semiconductor photodetector chip according to claim 4, It is characterized in that Forming an electrode, comprising: A patterned dielectric layer (51) is formed on a side of the detector wafer (10) away from the readout circuit wafer (20), wherein the dielectric layer (51) at least covers the first isolation groove (4), and the dielectric layer (51) exposes a fourth electrode (202) located at the bottom of the first isolation groove (4); A patterned transparent electrode layer (52) is formed on a side of the detector wafer (10) away from the readout circuit wafer (20), the transparent electrode layer (52) comprising a plurality of transparent electrodes (520), a second isolation groove (521) being provided between two adjacent transparent electrodes (520) to isolate the transparent electrodes (520), the transparent electrodes (520) corresponding one to the pixel table (3), the transparent electrodes (520) covering the corresponding pixel table (3) and extending to the fourth electrode (202) on one side of the pixel table (3).

7. A semiconductor photodetector chip, It is characterized in that include: A detector wafer (10), comprising a detector functional layer, wherein the outermost two layers of the detector functional layer along the thickness direction of the detector wafer (10) are respectively a first contact layer (21) and a second contact layer (22); the detector wafer (10) has pixel table surfaces (3) arranged in an array, and a first isolation groove (4) is provided between two adjacent pixel table surfaces (3) in the same array to isolate the pixel table surfaces (3); the first isolation groove (4) penetrates the detector wafer (10) along the thickness direction of the detector wafer (10); A readout circuit wafer (20), aligned with the detector wafer (10), having a third electrode (201) and a fourth electrode (202) on one side; A bonding layer (30) is arranged between the detector wafer (10) and the readout circuit wafer (20), the first isolation groove (4) extends to the bonding layer (30), and the orthographic projection of the bonding layer (30) on the readout circuit wafer (20) coincides with the orthographic projection of the pixel table (3) on the readout circuit wafer (20); The first contact layer (21) is electrically connected to the fourth electrode (202) and / or the second contact layer (22) is electrically connected to the third electrode (201).

8. The semiconductor photodetector chip according to claim 7, It is characterized in that The first contact layer (21) is located on a side of the detector functional layer (2) away from the readout circuit wafer (20); The bonding layer (30) is made of metal, the bonding layer (30) comprises a plurality of bonding electrodes (300), the bonding electrodes (300) correspond one-to-one to the pixel mesas (3), and the bonding electrodes (300) are electrically connected to the third electrode (201); The electrode is a transparent electrode (520) and is located on a side of the first contact layer (21) away from the readout circuit wafer (20), and is electrically connected to the third electrode (201) and the first contact layer (21).

9. The semiconductor photodetector chip according to claim 8, It is characterized in that The transparent electrodes (520) are continuously arranged to connect the pixel mesas (3) located in the same array; or, The transparent electrodes (520) correspond to the pixel table (3) one by one, and a second isolation groove (521) is provided between two adjacent transparent electrodes (520) to isolate the transparent electrodes (520); the fourth electrode (202) is located at the bottom of the first isolation groove (4), and a dielectric layer (51) is provided on the inner wall of the first isolation groove (4), and the dielectric layer (51) exposes the fourth electrode (202) located at the bottom of the first isolation groove (4); the transparent electrode (520) is located on a side of the dielectric layer (51) away from the readout circuit wafer (20), and the transparent electrode (520) extends from a side surface of the pixel table (3) away from the readout circuit wafer (20) along the side wall of the pixel table (3) to the fourth electrode (202), so that the fourth electrode (202) and the first contact layer (21) are electrically connected through the transparent electrode (520).

10. A photodetector chip, It is characterized in that The method is obtained by slicing a semiconductor photodetector chip prepared by the method for preparing a semiconductor photodetector chip according to any one of claims 1 to 6, or by slicing a semiconductor photodetector chip according to any one of claims 7 to 9.

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