A 1 / N-mode inverting SIW filter based on glass substrate technology

Abstract

This invention provides a 1 / N mode inverted SIW filter based on glass substrate technology, including an input port, an output port, and a body. The body includes a first metal layer, a second metal layer, and a glass substrate disposed between the first and second metal layers. A TGV structure runs through the glass substrate. At least two 1 / N mode inverted SIW filter resonant cavities and two symmetrical transition structures are formed on the body. The 1 / N mode inverted SIW filter resonant cavities are formed by a metal plate on part of the first metal layer, a second metal layer, and a TGV structure located on the metal plate. They are then connected to the input port and the output port respectively through the transition structures. The TGV structure located on the metal plate serves as a 1 / N mode coupled TGV.

Description

Technical Field

[0001] This invention relates to the field of filter technology, and in particular to a 1 / N mode inverted SIW filter based on glass substrate technology. Background Technology

[0002] LC filters based on glass substrate technology utilize TGV and metal to construct capacitors and inductors on the substrate to achieve filtering requirements. However, the process of LC filters is often quite complex, involving multi-layer structures and a cumbersome design process. They can only achieve good performance below 10GHz, and their performance deteriorates as they approach higher frequencies due to the inherent characteristics of capacitors and inductors. Summary of the Invention

[0003] This invention provides a 1 / N mode inverted SIW filter based on glass substrate technology. It has a compact and simple structure involving only a single layer design, can maintain good performance above 10 GHz, is easy to integrate, and is flexible in design.

[0004] To solve the above-mentioned technical problems, the present invention provides a 1 / N mode inverted SIW filter based on glass substrate technology, including an input port, an output port, and a body. The body includes a first metal layer, a second metal layer, and a glass substrate disposed between the first metal layer and the second metal layer. A TGV structure is penetrated on the glass substrate.

[0005] At least two 1 / N mode inverse SIW filter resonant cavities and two symmetrical transition structures are formed on the main body. The 1 / N mode inverse SIW filter resonant cavity is formed by a metal plate on part of the first metal layer, a second metal layer, and a TGV structure located on the metal plate. It is then connected to the input port and the output port respectively through the transition structure. The TGV structure located on the metal plate serves as a 1 / N mode coupled TGV.

[0006] In some embodiments, the 1 / N mode coupled TGV is located on the side of the 1 / N mode inverse SIW filter resonator near the transition structure.

[0007] In some embodiments, the filter resonant cavity of the 1 / N mode inverse SIW includes a 1 / N mode coupled electric wall and a 1 / N mode coupled TGV, and the 1 / N mode coupled electric wall is electrically coupled to the two transition structures.

[0008] In some embodiments, there is magnetic coupling between the 1 / N mode coupled TGVs in at least two 1 / N mode inverse SIW filters, and electromagnetic hybrid coupling introduces a zero point.

[0009] In some embodiments, source load coupling exists between the two transition structures, introducing another zero point.

[0010] In some embodiments, the filter resonant cavities of the at least two 1 / N mode inverse SIWs introduce at least two poles.

[0011] In some embodiments, the first metal layer includes a plurality of metal plates and metal wires, the metal plates being connected by the metal wires.

[0012] In some embodiments, the second metal layer is a monolithic metal plate.

[0013] In some embodiments, the metal plate forming the filter resonant cavity of the 1 / N mode inverse SIW is fan-shaped or triangular.

[0014] In some embodiments, the filter resonant cavity of the 1 / N mode inverted SIW is located on one or both sides of the transition structure.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: by utilizing the advantage of low dielectric loss of glass, a 1 / N mode inverse SIW filter resonant cavity is formed by TGV structure and metal plate, without using any inductor or capacitor structure, an equivalent filter structure can be formed, overcoming the disadvantage that the performance deteriorates as it approaches high frequency due to the characteristics of capacitors and inductors themselves, and can maintain good performance above 10GHz, and still maintain good out-of-band rejection at about three harmonics. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the overall structure of the filter of the present invention;

[0017] Figure 2 This is a schematic diagram of the layered structure of the filter of the present invention;

[0018] Figure 3 This is a top view of the filter structure of the present invention;

[0019] Figure 4 This is the topology diagram corresponding to the filter structure of the present invention;

[0020] Figure 5 This is a schematic diagram of the simulated S-parameters of the filter of the present invention;

[0021] Figure 6 This is a schematic diagram of the overall structure of a filter with four resonant cavities.

[0022] Figure 7 This is a schematic diagram of the overall structure of a filter with the resonant cavity located on both sides of the transition structure.

[0023] Figure label:

[0024] 1. First metal layer; 2. Second metal layer; 3. Glass substrate; 4. TGV structure; 5. Input / output port; 6. Transition structure; 7. Fan-shaped metal plate; 8. 1 / N-mode coupled TGV. Detailed Implementation

[0025] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0026] Reference Figure 1-7 This embodiment provides a 1 / N mode inverted SIW (Substrate Integrated Waveguide) filter based on glass substrate 3 technology, including an input port, an output port, and a body. The body includes a first metal layer 1 and a second metal layer 2. The first metal layer 1 includes a plurality of metal plates and metal lines, and the metal plates are connected by metal lines. The second metal layer 2 is a monolithic metal plate.

[0027] It also includes a glass substrate 3 disposed between the first metal layer 1 and the second metal layer 2, wherein a TGV structure 4 is disposed through the glass substrate 3. The TGV structure 4 has different functions in the filter. The TGV (Through Glass Via) refers to a glass through-hole that penetrates the glass substrate.

[0028] In this embodiment, a portion of the first metal layer 1 and the second metal layer 2 of the main body, along with the TGV structure, enclose two 1 / N mode inverted SIW filter resonant cavities. Specifically, the two fan-shaped metal plates 7 in the first metal layer 1, the second metal layer 2, and the TGV structure located on the two fan-shaped metal plates 7 enclose two fan-shaped 1 / N mode inverted SIW filter resonant cavities. As a simple alternative to this embodiment, the fan-shaped metal plates 7 can also be triangular or other shapes.

[0029] The TGV structure located on the metal plate serves as a 1 / N mode coupled TGV8, which is situated on the side of the fan-shaped 1 / N mode inverse SIW filter resonator closest to the transition structure 6. The main body also includes two symmetrical filter structures, and the 1 / N mode inverse SIW filter resonator is connected to the input / output ports 5 respectively via the transition structure 6.

[0030] In this embodiment, the filter resonant cavity of the 1 / N mode inverse SIW further includes a 1 / N mode coupled electric wall. The filter resonant cavity of the 1 / N mode inverse SIW includes the 1 / N mode coupled electric wall and the 1 / N mode coupled TGV8, and the 1 / N mode coupled electric wall is electrically coupled to the two transition structures 6. Magnetic coupling exists between the 1 / N mode coupled TGV8 in at least two 1 / N mode inverse SIW filters; this electromagnetic hybrid coupling introduces a zero point. Specifically, as follows... Figure 3 As shown, in the overall structure, there is electrical coupling between transition structure b and the 1 / N mode anti-SIW electric wall c, between 1 / N mode anti-SIW electric wall c and 1 / N mode anti-SIW electric wall f, and between 1 / N mode anti-SIW electric wall f and transition structure g. There is magnetic coupling between the 1 / N mode coupled TGVs (d and e). This electromagnetic hybrid coupling introduces a zero point into the system. Source-load coupling exists between the two transition structures 6, introducing another zero point.

[0031] The two 1 / N mode inverted SIW filter resonators each introduce a pole into the system. Therefore, in the filter structure of this embodiment, a total of two zeros and two poles are introduced into the system. The signal transmission path of the filter is ab-cd-ef-gh.

[0032] like Figure 5 As shown in the figure, the horizontal axis represents the response frequency (unit: GHz), and the vertical axis represents the return loss and insertion loss of the filter (unit: dB). From the simulated S-parameters of the filter, it can be seen that the filter designed in this embodiment has a minimum in-band insertion loss of 1.20 dB, a center frequency of 25.8 GHz, a 3 dB passband of 23.942 GHz to 27.624 GHz, a bandwidth of 3.682 GHz, and a 3 dB fractional bandwidth of approximately 14.27%. Within the passband, the return loss is greater than 20 dB. The S-parameters also show that a transmission zero is generated on each side of the passband. These two transmission zeros are caused by electromagnetic hybrid coupling and source-load coupling, respectively. The two poles within the passband are caused by the 1 / N mode inverse SIW filter structure, ultimately achieving a single passband filter response with two poles (M1-M2) + two zeros (M3-M4). Modifying the resonant frequency of the resonant cavity can adjust the center frequency of this embodiment, making it widely applicable in various fields.

[0033] like Figure 6 As shown, as a simple alternative to this embodiment, the number of filter resonators in the 1 / N mode inverted SIW is not limited to two or four parts. Of course, it can also be made into three or even more parts. The length and angle of the transition structure 6 can also be flexibly adjusted accordingly, and the size, depth, and number of TGVs can also be adjusted accordingly.

[0034] like

[0035] like Figure 7 As shown, as a simple alternative to this embodiment, the filter resonant cavity of the 1 / N mode inverted SIW can be located on both sides of the transition structure 6.

[0036] The 1 / N-mode inverting SIW filter based on glass substrate technology in this embodiment achieves good filtering response and excellent out-of-band rejection above 10 GHz. Furthermore, the filter obtained through this design can flexibly adjust its order as needed, effectively reducing the size of existing filters; it facilitates integration and interconnection; it is suitable for mass production; the number and position of the zeros and poles in the filtering response are adjustable and controllable; and it can introduce good filtering effects above 10 GHz and even in the millimeter-wave band.

[0037] The above description is merely a preferred embodiment of the present invention, but the design concept of the present invention is not limited thereto. Any non-substantial modifications made to the present invention by those skilled in the art within the scope of the technology disclosed in the present invention using this concept shall be deemed as an infringement of the protection scope of the present invention.

Claims

1. A 1 / N-mode inverting SIW filter based on glass substrate technology, characterized in that, The system includes an input port, an output port, and a body. The body comprises a first metal layer, a second metal layer, and a glass substrate disposed between the first and second metal layers. A TGV structure extends through the glass substrate. At least two 1 / N mode inverse SIW filter resonant cavities and two symmetrical transition structures are formed on the body. Each 1 / N mode inverse SIW filter resonant cavity is formed by a metal plate on a portion of the first metal layer, a second metal layer, and a TGV structure located on the metal plate. It is then connected to the input port and the output port respectively through the transition structures. The TGV structure located on the metal plate serves as a 1 / N mode coupled TGV. The 1 / N mode coupled TGV is located on the side of the 1 / N mode inverse SIW filter resonant cavity closest to the transition structures. Each 1 / N mode inverse SIW filter resonant cavity includes a 1 / N mode coupled electric wall and the 1 / N mode coupled TGV. The 1 / N mode coupled electric wall is electrically coupled to the two transition structures. The filters of at least two 1 / N mode inverse SIWs have magnetic coupling between the 1 / N mode coupled TGVs, and electromagnetic hybrid coupling introduces a zero; the two transition structures have source-load coupling, introducing another zero; the filter resonant cavities of the at least two 1 / N mode inverse SIWs introduce at least two poles; the first metal layer includes several metal plates and metal wires, and the metal plates are connected by metal wires; the second metal layer is a monolithic metal plate; the metal plates forming the filter resonant cavities of the 1 / N mode inverse SIWs are fan-shaped or triangular; the filter resonant cavities of the 1 / N mode inverse SIWs are located on one or both sides of the transition structures.

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