Display panel, preparation method of display panel and display module
By setting a protective film layer in the metal binding area of the display module, the etching damage problem is solved and the pass rate of the preparation process is improved.
Patent Information
- Application Number
- CN202411377665.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-29
- Publication Date
- 2024-12-20
AI Technical Summary
During the manufacturing process of the existing display module, the metal binding area is prone to etching damage during the etching of the pixel anode layer, resulting in a low pass rate of the preparation process.
A protective film layer is provided on one side of the metal binding area to avoid etching damage through the protective film layer and improve the pass rate of the preparation process.
By setting a protective film layer in the metal binding area, etching damage is effectively avoided, and the pass rate of the preparation process of the display panel is improved.
Smart Images
Figure CN119173104A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure generally relates to the technical field of display devices, and in particular to a display panel, a method for preparing a display panel, and a display module. Background Art
[0002] At present, in the process of manufacturing display modules, an area (i.e., bonding area) that is connected to a printed circuit board (PCB) and a COF chip is usually reserved inside the display module to provide timing and voltage signals to the display panel. Specifically, the above-mentioned bonding area can be directly made using the pixel anode layer inside the display panel, but this manufacturing method is prone to film peeling and oxidation.
[0003] To deal with this situation, the prior art can prepare the bonding region by first preparing the bonding region and then preparing the pixel anode layer. However, the bonding region is easily etched away during the etching process of the pixel anode layer.
[0004] Therefore, the existing display module still has the problem of etching the bonding area. Summary of the invention
[0005] In view of the above-mentioned defects or deficiencies in the prior art, it is desired to provide a display panel, a method for preparing a display panel, and a display module. The display panel provided in the present application can protect the metal binding area by providing a protective film layer on one side of the metal binding area, thereby avoiding the problem of etching the metal binding area during the preparation process of the display panel.
[0006] According to a first aspect of the present application, a display panel is provided, comprising: a substrate, a first metal layer disposed on one side of the substrate, and a first dielectric layer disposed on a side of the first metal layer away from the substrate, wherein the first dielectric layer comprises a metal binding region; A protective film layer is correspondingly arranged on a side of the metal binding region away from the substrate, and a pixel anode layer is arranged on a side of the protective film layer away from the substrate.
[0007] In addition, the display panel of the present application may also have the following additional technical features: In a possible example, a projection pattern of the metal binding area in the orthographic projection direction is included in a projection pattern of the protection film layer in the orthographic projection direction.
[0008] In a possible example, the protective film layer includes a first area that is bonded to a side of the metal binding area away from the substrate and a second area that is circumferentially bonded to the metal binding area along a first direction, wherein the first area is connected to the second area, and the first direction is a direction perpendicular to the orthographic projection direction.
[0009] In a possible example, the protective film layer includes a region that is in contact with a side of the metal binding region away from the substrate and an extension region along a first direction, where the first direction is a direction perpendicular to the orthographic projection direction.
[0010] In a possible example, a length of the second region along the first direction is greater than or equal to 0.75 um.
[0011] In a possible example, a second dielectric layer is further provided on a side of the first dielectric layer away from the substrate, and a first dielectric region of the second dielectric layer is provided corresponding to a region of the first dielectric layer excluding the metal binding region, and the second dielectric layer also includes a second dielectric region distributed in a circumferential direction of the first dielectric region, and the second dielectric region is provided corresponding to a partial region of the metal binding region.
[0012] In a possible example, the protective film layer is made of indium tin oxide.
[0013] According to a second aspect of the present application, a method for preparing a display panel is provided, the method comprising: Preparing a first metal layer on one side of the substrate, and preparing a first dielectric layer on a side of the first metal layer away from the substrate; Removing the dielectric material in a preset area of the first dielectric layer, and preparing a metal binding area in the preset area; A protective film layer is prepared on a side of the metal binding region away from the substrate, and a pixel anode layer is prepared on a side of the protective film layer away from the substrate.
[0014] In addition, the method for manufacturing the display panel of the present application may also have the following additional technical features: In a possible example, the step of preparing a protective film layer on a side of the metal binding region away from the substrate includes: The metal binding area is etched based on a preset pattern, and a protective film layer is prepared on the side of the etched metal binding area away from the substrate, wherein the protective film layer includes a first area bonded to the side of the metal binding area away from the substrate and a second area circumferentially bonded to the metal binding area along a first direction, the first area is connected to the second area, and the first direction is a direction perpendicular to the orthographic projection direction.
[0015] In a possible example, the step of preparing a protective film layer on a side of the metal binding region away from the substrate includes: Preparing a protective film layer on a side of the metal binding area away from the substrate; The metal binding area is first etched based on a preset pattern, and then the protective film layer is etched. The protective film layer includes an area that is in contact with a side of the metal binding area away from the substrate and an extension area along a first direction, wherein the first direction is a direction perpendicular to the orthographic projection direction.
[0016] According to a third aspect of the present application, a display module is provided, which includes the display panel of the first aspect.
[0017] Compared with the method of directly preparing the pixel anode layer on one side of the metal binding area in the prior art, the display panel, the method for preparing the display panel and the display module provided in the embodiments of the present application can set a protective film layer on one side of the metal binding area and prepare the pixel anode layer on the side of the protective film layer away from the metal binding area. In the preparation process of the pixel anode layer, the protective film layer can be used to avoid etching of the metal binding area, thereby improving the pass rate of the display panel preparation process.
[0018] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings: Figure 1 One of the cross-sectional schematic diagrams of the existing display panel 10 provided in the embodiment of the present application; Figure 2 The second cross-sectional schematic diagram of the existing display panel 10 provided in the embodiment of the present application; Figure 3 One of the cross-sectional schematic diagrams of the display panel 20 provided in the embodiment of the present application; Figure 4 The second cross-sectional schematic diagram of the display panel 20 provided in the embodiment of the present application; Figure 5 The third cross-sectional schematic diagram of the display panel 20 provided in the embodiment of the present application; Figure 6 A fourth cross-sectional schematic diagram of the display panel 20 provided in an embodiment of the present application; Figure 7 A schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application; Figure 8One of the schematic diagrams of the process of preparing the display panel 20 provided in the embodiment of the present application; Fig. 9 A second schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application; Fig.10 The third schematic diagram of the process of preparing the display panel 20 provided in the embodiment of the present application; Fig.11 A fourth schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application; Fig.12 A fifth schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application; Fig.13 A sixth schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application; Fig.14 The seventh schematic diagram of the process of preparing the display panel 20 provided in the embodiment of the present application; In the above picture: 10-display panel; 101-substrate; 102-metal layer; 103-insulating layer; 104-Bonding area; 105-pixel anode layer; 20-display panel; 201-substrate; 202-first metal layer; 203-first dielectric layer; 2031-metal binding area; 204-protective film layer; 205-pixel anode layer; 2041-first area of the metal binding area 2031; 2042-second area of the metal binding area 2031; 2043-area bonded to the side of the metal binding area 2031 away from the substrate 201; 2044-extension area of the metal binding area 2031 along the first direction; 206-inorganic layer; 207-buffer layer; 208-second dielectric layer; 2081-first dielectric area; 2082-second dielectric area. DETAILED DESCRIPTION
[0020] The present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It is also necessary to explain that, for ease of description, only the parts related to the invention are shown in the accompanying drawings.
[0021] It should be noted that, in the absence of conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments. In addition, the term "and / or" herein is merely a description of the association relationship of associated objects, indicating that three relationships may exist, for example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. The terms "first" and "second" in the description and claims of the embodiments of the present application are used to distinguish different objects, rather than to describe a specific order of objects.
[0022] At present, in the process of manufacturing display modules such as Organic Electroluminescence Display (OLED) / Liquid Crystal Display (LCD), an area (i.e., Bonding area) that is connected to a printed circuit board (PCB) and a COF chip is usually reserved inside the display module to provide timing and voltage signals to the display panel.
[0023] Specifically, the above-mentioned binding area can be made directly from the pixel anode layer inside the display panel in the display module, but this method is prone to film peeling and oxidation. Secondly, metals with large resistance values are prone to forming etching residues at the concave corners of the insulating film layer after the etching process. In order to avoid the problem of low qualification rate of the preparation process due to etching residues, the existing oxide process usually cannot complete the preparation of the above-mentioned binding area like using metals such as tantalum in the low-temperature polysilicon process.
[0024] In response to the above situation, the existing technology can prepare the bonding area by first preparing the bonding area and then preparing the pixel anode layer. However, when the bonding area is composed of preparation materials such as Mo / Al / Mo or MTD / Cu / MTD, etching damage to the bonding area is likely to occur during the etching process of the pixel anode layer.
[0025] In order to improve the above etching damage problem, the bonding area can be set as a double-layer SD metal film layer. Specifically, Figure 1 is one of the cross-sectional schematic diagrams of the existing display panel 10 provided in the embodiment of the present application, such as Figure 1As shown, the display panel 10 may include a substrate 101, a metal layer 102 disposed on one side of the substrate 101, an insulating layer 103 disposed on a side of the metal layer 102 away from the substrate 101, a bonding region 104 composed of a metal material disposed on a side of the insulating layer 103 away from the substrate 101, and a pixel anode layer 105 disposed on a side of the bonding region 104 away from the substrate 101. The bonding region 104 is provided with two SD film layers.
[0026] However, during the preparation of the pixel anode layer 105, the etching solution of the pixel anode layer 105 is likely to cause corrosion damage to the SD film layer and the metal layer 102 on the side of the pixel anode layer 105 close to the substrate 101. Figure 2 is a second cross-sectional schematic diagram of the existing display panel 10 provided in the embodiment of the present application, such as Figure 2 As shown, the etching solution of the pixel anode layer 105 can etch the SD film layer in the bonding area 104 into a radial shape.
[0027] Therefore, the existing display module still has the problem of etching the bonding area, which leads to a low pass rate of the existing manufacturing process.
[0028] Based on this, the present application proposes a display panel, which can protect the metal binding area by providing a protective film layer on one side of the metal binding area, thereby avoiding the etching problem of the metal binding area during the preparation process of the display panel.
[0029] Figure 3 is one of the cross-sectional schematic diagrams of the display panel 20 provided in the embodiment of the present application, such as Figure 3 As shown, the display panel 20 includes a substrate 201 , a first metal layer 202 disposed on one side of the substrate 201 , and a first dielectric layer 203 disposed on a side of the first metal layer 202 away from the substrate 201 , wherein the first dielectric layer 203 includes a metal binding region 2031 .
[0030] Specifically, a protective film layer 204 is correspondingly disposed on a side of the metal binding region 2031 away from the substrate 201 , and a pixel anode layer 205 is disposed on a side of the protective film layer 204 away from the substrate 201 .
[0031] For example, the substrate 201 as the substrate material of the display panel 20 may have the characteristics of low expansion coefficient and high surface flatness, and its manufacturing material may be, for example, alkali-free glass. Specifically, the substrate 201 may be called a thin film transistor (TFT) glass substrate layer.
[0032] Exemplarily, the first metal layer 202 may be used as a metal layer used for a gate in a TFT structure (Gate layer, referred to as GT layer for short).
[0033] Exemplarily, the first dielectric layer 203 can be used to provide electrical isolation between different metal layers, and can also provide mechanical support for the metal interconnect layer. Specifically, the first dielectric layer 203 can be a dielectric material layer (Inter-Layer Dielectric, referred to as ILD) composed of materials such as silicon dioxide (SiO2), low dielectric constant (low-k) or high dielectric constant (high-k).
[0034] Exemplarily, the metal binding region 2031 included in the first dielectric layer 203 can be used to connect metal layers in the display panel 20. The metal binding region 2031 can be used to set a signal data layer (Signal Data Layer, SD for short) in the TFT structure.
[0035] Specifically, the signal data layer can accurately transmit the pixel signal to each pixel, that is, the electrical signal that can be used to control the brightness of each pixel. For example, the signal data layer can be made of metal materials such as aluminum or copper.
[0036] Exemplarily, along the orthographic projection direction, the thickness of the metal binding region 2031 is greater than the thickness of the first dielectric layer 203 .
[0037] For example, the pixel anode layer 205 may have good transparency and conductivity, and its manufacturing material may be, for example, indium tin oxide (ITO) and silver. For example, the structure of the pixel anode layer 205 may be ITO / Ag / ITO.
[0038] Specifically, during the photolithography of the OLED display panel, the pixel anode layer 205 can be used to guide positive charges (ie, holes) into the light-emitting pixel layer to recombine with negative charges (ie, electrons) in the light-emitting pixel layer, thereby stimulating the light-emitting pixel layer to emit light.
[0039] Exemplarily, a protective film layer 204 may be disposed on a side of the metal binding region 2031 away from the substrate 201, so as to protect the metal binding region 2031. Specifically, the protective film layer 204 may be made of indium tin oxide.
[0040] Compared with the method of directly preparing the pixel anode layer on one side of the metal binding area in the prior art, the display panel 20 provided in the embodiment of the present application can be prepared by setting a protective film layer 204 on one side of the metal binding area 2031 and preparing the pixel anode layer 205 on the side of the protective film layer 204 away from the metal binding area 2031. In the preparation process of the pixel anode layer 205, the protective film layer 204 can be used to avoid etching of the metal binding area 2031, thereby improving the pass rate of the display panel 20 preparation process.
[0041] In another embodiment of the present application, a specific distribution mode of the metal binding area 2031 and the protective film layer 204 is also provided. Exemplarily, the projection pattern of the metal binding area 2031 in the orthographic projection direction is included in the projection pattern of the protective film layer 204 in the orthographic projection direction.
[0042] In the embodiment of the present application, in the orthographic projection direction of the display panel 20, the protective film layer 204 is completely covered on the side of the metal binding area 2031 away from the substrate 201 to protect the metal binding area 2031, wherein the orthographic projection direction of the display panel 20 can be as follows: Figure 3 The direction shown is from the pixel anode layer 205 to the substrate 201 .
[0043] In a possible implementation, different covering modes of the metal binding region 2031 by the protective film layer 204 can be achieved by adjusting the preparation sequence of the metal binding region 2031 and the protective film layer 204 .
[0044] Illustratively, after the metal binding area 2031 is laid, the metal binding area 2031 can be patterned first, and then a protective film layer 204 is laid on the side of the patterned metal binding area 2031 away from the substrate 201, and then the protective film layer 204 is patterned, wherein the patterning can be etching the film layer based on a preset pattern.
[0045] Based on this, Figure 4 is a second cross-sectional schematic diagram of the display panel 20 provided in the embodiment of the present application, such as Figure 4 As shown, the protective film layer 204 may include a first area 2041 that is bonded to the side of the metal binding area 2031 away from the substrate 201 and a second area 2042 that is bonded to the metal binding area 2031 circumferentially along a first direction, wherein the first area 2041 is connected to the second area 2042, and the first direction is a direction perpendicular to the orthographic projection direction.
[0046] In the embodiment of the present application, based on the above preparation method, the second region 2042 bonded to the circumference of the metal binding region 2031 can be used to protect the side of the metal binding region 2031, thereby ensuring the etching protection effect of the metal binding region 2031.
[0047] Specifically, the preparation material of the SD film layer located in the metal binding area 2031 may be metal Mo / Al / Mo, wherein the thickness of the metal Mo / Al / Mo may be, for example, 200 / 3000 / 800 Å.
[0048] Specifically, the thickness of the protective film layer 204 along the orthographic projection direction may range from 200 to 1000 Å.
[0049] It should be noted that since the critical dimension (CD) of the metal binding area 2031 in the display panel 20 is less than or equal to 1.5 um than the critical dimension of the protective film layer 204, it is necessary to reserve a sufficient range of the protective film layer 204 (i.e., the second area 2042) in the circumferential direction of the metal binding area 2031 to ensure the protection of the SD film layer in the metal binding area 2031.
[0050] Specifically, the length of the second region 2042 along the first direction is greater than or equal to 0.75 μm, wherein the first direction is a direction perpendicular to the orthographic projection direction, that is, the first direction can be as follows: Figure 4 The extending direction of the protection film layer 204 is shown.
[0051] It should be noted that, since the thickness of the metal binding region 2031 along the orthographic projection direction is greater than the thickness of the first dielectric layer 203 along the orthographic projection direction, the side of the second region 2042 close to the substrate 201 is in a bonded state with the first dielectric layer 203 .
[0052] Optionally, after the metal binding area 2031 is laid, a protective film layer 204 can be laid on the side of the metal binding area 2031 away from the substrate 201, and then the metal binding area 2031 and the protective film layer 204 are patterned, wherein the patterning process can be etching each film layer separately based on a preset pattern.
[0053] Based on this, Figure 5 is a third cross-sectional schematic diagram of a display panel 20 provided in an embodiment of the present application, such as Figure 5 As shown, the protection film layer 204 includes an area 2043 that is in contact with the side of the metal binding area 2031 away from the substrate 201 and an extension area 2044 along a first direction, wherein the first direction is a direction perpendicular to the orthographic projection direction.
[0054] In the embodiment of the present application, based on the above preparation method, while the metal binding area 2031 is protected by the protective film layer 204, an indented shape (i.e., an eaves structure) with the SD film layer in the metal binding area 2031 can be formed by the extended area 2044 in the protective film layer 204.
[0055] Specifically, the preparation material of the SD film layer located in the metal binding area 2031 may be metal Mo / Al / Mo, wherein the thickness of the metal Mo / Al / Mo may be, for example, 200 / 3000 / 800 Å.
[0056] Specifically, before the SD film layer is patterned, a protective film layer 204 with a thickness ranging from 200 to 1000 Å may be deposited on a side of the SD film layer away from the substrate 201 .
[0057] Specifically, when the metal binding region 2031 and the protection film layer 204 are patterned, the protection film layer 204 is etched first, and then the SD film layer of the metal binding region 2031 is etched.
[0058] It should be noted that when the metal binding area 2031 and the protective film layer 204 are patterned by wet etching, the etching solution for the metal binding area 2031 and the protective film layer 204 has etching selectivity, which may easily lead to the following Figure 5 The eaves structure shown.
[0059] In another embodiment of the present application, other film layer distributions of the display panel 20 are also provided. Exemplarily, Figure 6 is a fourth cross-sectional schematic diagram of the display panel 20 provided in the embodiment of the present application, such as Figure 6 As shown, an inorganic layer 206 is further disposed on a side of the first metal layer 202 close to the substrate 201 , and a buffer layer 207 is further disposed on a side of the inorganic layer 206 close to the substrate 201 .
[0060] Exemplarily, the inorganic layer 206 may be a gate insulating layer (GI layer) in the TFT structure. Specifically, the inorganic layer 206 may be used to maintain a stable voltage of the gate electrode, wherein the material of the inorganic layer 206 may be, for example, silicon dioxide (SiO2), silicon nitride (Si3N4) or hafnium oxide (HfO2).
[0061] For example, the buffer layer 207 may be a buffer layer for connecting the TFT structure and the color filter, wherein the preparation process of the buffer layer 207 may be, for example, a sputtering coating method or a chemical vapor deposition method (referred to as CVD).
[0062] In another embodiment of the present application, other film layer distributions of the display panel 20 are also provided. For example, Figure 6 As shown, a second dielectric layer 208 is also provided on the side of the first dielectric layer 203 away from the substrate 201, and the first dielectric region 2081 of the second dielectric layer 208 is arranged corresponding to the area of the first dielectric layer 203 except the metal binding area 2031, and the second dielectric layer 208 also includes a second dielectric region 2082 distributed around the first dielectric region 2081, and the second dielectric region 2082 is arranged corresponding to a partial area of the metal binding area 2031.
[0063] Exemplarily, the second dielectric layer 208 may be a polyimide insulating layer (ie, a PVX insulating layer) in a TFT structure.
[0064] In another embodiment of the present application, a method for preparing the display panel 20 is also provided. Figure 7 is a schematic diagram of a method for preparing a display panel 20 provided in an embodiment of the present application, such as Figure 7 As shown, the method comprises the following steps: Step 701 , preparing a first metal layer 202 on one side of a substrate 201 , and preparing a first dielectric layer 203 on a side of the first metal layer 202 away from the substrate 201 .
[0065] For example, Figure 8 is one of the schematic diagrams of the process of preparing the display panel 20 provided in the embodiment of the present application, such as Figure 8 As shown, a buffer layer 207 may be prepared on one side of the substrate 201 by sputtering or chemical vapor deposition, so as to connect the TFT structure and the color filter by the buffer layer 207 , wherein the buffer layer 207 may also be called a Buff layer.
[0066] For example, Fig. 9 FIG. 2 is a second schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application. Fig. 9 As shown, an inorganic material may be prepared on the side of the buffer layer 207 away from the substrate 201 to form an inorganic layer 206 , wherein the inorganic material used to prepare the inorganic layer 206 may be, for example, silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ) or hafnium oxide (HfO 2 ).
[0067] For example, Fig.10 FIG. 3 is a third schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application. Fig.10 As shown, a metal material may be prepared on a side of the inorganic layer 206 away from the substrate 201 to form the first metal layer 202 , wherein the manufacturing material of the substrate 201 may be, for example, alkali-free glass.
[0068] For example, Fig.11FIG. 4 is a fourth schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application. Fig.11 As shown, a dielectric material such as silicon dioxide, a low dielectric constant or a high dielectric constant can be prepared on a side of the first metal layer 202 away from the substrate 201 to form a first dielectric layer 203, wherein the first dielectric layer 203 can also be called an ILD film layer.
[0069] Step 702 , removing the dielectric material in a preset area of the first dielectric layer 203 , and preparing a metal binding area 2031 in the preset area.
[0070] For example, Fig.12 FIG. 5 is a fifth schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application. Fig.12 As shown, the dielectric material in the preset region of the first dielectric layer 203 can be removed, and a metal material can be prepared in the preset region to form a metal binding region 2031 .
[0071] Exemplarily, the metal binding region 2031 may be used to connect metal layers in the display panel 20 together, for example, may be used to set an SD film layer in a TFT structure.
[0072] Specifically, the preparation material of the SD film layer located in the metal binding area 2031 may be metal Mo / Al / Mo, wherein the thickness of the metal Mo / Al / Mo may be, for example, 200 / 3000 / 800 Å.
[0073] It should be noted that, along the orthographic projection direction, the thickness of the metal binding region 2031 is greater than the thickness of the first dielectric layer 203 .
[0074] Step 703 , preparing a protective film layer 204 on a side of the metal binding region 2031 away from the substrate 201 , and preparing a pixel anode layer 205 on a side of the protective film layer 204 away from the substrate 201 .
[0075] For example, Fig.13 This is the sixth schematic diagram of the process of preparing the display panel 20 provided in the embodiment of the present application. Fig.13 As shown, a protective film layer 204 can be prepared on the side of the metal binding area 2031 away from the substrate 201; wherein the protective film layer 204 is arranged corresponding to the metal binding area 2031, and the preparation material of the protective film layer 204 can be, for example, indium tin oxide.
[0076] For example, Fig.14 FIG. 7 is a seventh schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application. Fig.14As shown, polyimide can be prepared on the side of the protective film layer 204 away from the substrate 201, and based on the setting position of the metal binding area 2031, the polyimide material at the position corresponding to the metal binding area 2031 is removed to form a second dielectric layer 208, wherein the second dielectric layer 208 can be a PVX insulating layer in the TFT structure.
[0077] Specifically, the first dielectric region 2081 of the second dielectric layer 208 is arranged corresponding to the area of the first dielectric layer 203 except the metal binding area 2031. The second dielectric layer 208 also includes a second dielectric region 2082 distributed around the first dielectric region 2081. The second dielectric region 2082 is arranged corresponding to a partial area of the metal binding area 2031.
[0078] For example, a pixel anode layer 205 may be formed on a side of the second dielectric layer 208 away from the substrate 201 to form a Figure 6 The display panel 20 is shown.
[0079] For example, the pixel anode layer 205 may have good transparency and conductivity, and its manufacturing material may be, for example, indium tin oxide (ITO) and silver. For example, the structure of the pixel anode layer 205 may be ITO / Ag / ITO.
[0080] Specifically, during the photolithography of the OLED display panel, the pixel anode layer 205 can be used to guide positive charges (ie, holes) into the light-emitting pixel layer to recombine with negative charges (ie, electrons) in the light-emitting pixel layer, thereby stimulating the light-emitting pixel layer to emit light.
[0081] Compared with the method of directly preparing the pixel anode layer on one side of the metal binding area in the prior art, the display panel 20 provided in the embodiment of the present application can be prepared by setting a protective film layer 204 on one side of the metal binding area 2031 and preparing the pixel anode layer 205 on the side of the protective film layer 204 away from the metal binding area 2031. In the preparation process of the pixel anode layer 205, the protective film layer 204 can be used to avoid etching of the metal binding area 2031, thereby improving the pass rate of the display panel 20 preparation process.
[0082] In another embodiment of the present application, a method for preparing the above-mentioned protective film layer 204 is also provided. Exemplarily, the aforementioned "preparing the protective film layer 204 on the side of the metal binding area 2031 away from the substrate 201" specifically includes: etching the metal binding area 2031 based on a preset pattern, and preparing the protective film layer 204 on the side of the etched metal binding area 2031 away from the substrate 201, wherein the protective film layer 204 may include a first area 2041 bonded to the side of the metal binding area 2031 away from the substrate 201 and a second area 2042 bonded to the metal binding area 2031 circumferentially along a first direction, wherein the first area 2041 is connected to the second area 2042, and the first direction is a direction perpendicular to the orthographic projection direction.
[0083] In the embodiment of the present application, based on the above-mentioned preparation method of first completing the patterning process of the metal binding area 2031 and then preparing the protective film layer 204, the second area 2042 formed by the preparation process and arranged in the circumference of the metal binding area 2031 can be used to protect the side of the metal binding area 2031, thereby ensuring the etching protection effect of the metal binding area 2031.
[0084] Illustratively, after the metal binding area 2031 is laid, the metal binding area 2031 can be patterned first, and then a protective film layer 204 is laid on the side of the patterned metal binding area 2031 away from the substrate 201, and then the protective film layer 204 is patterned, wherein the patterning can be etching the film layer based on a preset pattern.
[0085] Specifically, the thickness of the protective film layer 204 along the orthographic projection direction may range from 200 to 1000 Å; the length of the second region 2042 along the first direction is greater than or equal to 0.75 um, wherein the first direction is a direction perpendicular to the orthographic projection direction.
[0086] In another embodiment of the present application, another method for preparing the protective film layer 204 is provided. Exemplarily, the aforementioned "preparing the protective film layer 204 on the side of the metal binding area 2031 away from the substrate 201" specifically includes: preparing the protective film layer 204 on the side of the metal binding area 2031 away from the substrate 201; first etching the metal binding area 2031 based on a preset pattern, and then etching the protective film layer 204, the protective film layer 204 includes an area 2043 that is in contact with the side of the metal binding area 2031 away from the substrate 201 and an extension area 2044 along a first direction, the first direction being a direction perpendicular to the orthographic projection direction.
[0087] In an embodiment of the present application, based on the above-mentioned preparation method of first laying the protective film layer 204 before patterning the metal binding area 2031, the protective film layer 204 formed by the preparation process can be used to protect the metal binding area 2031, while the extended area 2044 in the protective film layer 204 can form an eaves structure with the SD film layer in the metal binding area 2031.
[0088] Exemplarily, after the metal binding area 2031 is laid, a protective film layer 204 can be laid on the side of the metal binding area 2031 away from the substrate 201, and then the metal binding area 2031 and the protective film layer 204 are patterned, wherein the patterning process can be etching each film layer separately based on a preset pattern.
[0089] Specifically, before the SD film layer is patterned, a protective film layer 204 with a thickness ranging from 200 to 1000 Å may be deposited on a side of the SD film layer away from the substrate 201 .
[0090] It should be noted that when the metal binding region 2031 and the protection film layer 204 are patterned, the protection film layer 204 is etched first, and then the SD film layer of the metal binding region 2031 is etched.
[0091] In another embodiment of the present application, a display module 30 is introduced. The display module 30 may include the display panel 20 in the above embodiment.
[0092] In a possible implementation, the display module 30 can be used to output image information. Exemplarily, the display module 30 can display text images by controlling semiconductor light emitting diodes; for example, the display module 30 can be an OLED display module or an LCD display module.
[0093] Compared with the method of directly preparing the pixel anode layer on one side of the metal binding area in the prior art, the display module 30 provided in the embodiment of the present application can be configured by setting a protective film layer 204 on one side of the metal binding area 2031 of the internal display panel 20 and preparing the pixel anode layer 205 on the side of the protective film layer 204 away from the metal binding area 2031. In the preparation process of the pixel anode layer 205, the protective film layer 204 can be used to avoid etching of the metal binding area 2031, thereby improving the qualification rate of the preparation process of the display panel 20, thereby improving the preparation qualification rate of the display module 30.
[0094] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of disclosure involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the aforementioned disclosed concept. For example, the above features are replaced with the technical features with similar functions disclosed in this application (but not limited to) by each other to form a technical solution.
Claims
1. A display panel, characterized in that: The invention comprises a substrate, a first metal layer arranged on one side of the substrate, and a first dielectric layer arranged on a side of the first metal layer away from the substrate, wherein the first dielectric layer comprises a metal binding region; A protective film layer is correspondingly provided on a side of the metal binding area away from the substrate, and a pixel anode layer is provided on a side of the protective film layer away from the substrate.
2. The display panel according to claim 1, wherein: The projection pattern of the metal binding area in the orthographic projection direction is included in the projection pattern of the protective film layer in the orthographic projection direction.
3. The display panel according to claim 2, wherein: The protective film layer includes a first area that is bonded to the side of the metal binding area away from the substrate and a second area that is bonded to the metal binding area circumferentially along a first direction, wherein the first area is connected to the second area, and the first direction is perpendicular to the orthographic projection direction.
4. The display panel according to claim 2, wherein: The protective film layer includes a region that is in contact with a side of the metal binding region away from the substrate and an extension region along a first direction, where the first direction is a direction perpendicular to the orthographic projection direction.
5. The display panel according to claim 3, wherein: A length of the second region along the first direction is greater than or equal to 0.75 um.
6. The display panel according to claim 1, wherein: A second dielectric layer is also provided on the side of the first dielectric layer away from the substrate, and the first dielectric region of the second dielectric layer is arranged corresponding to the region of the first dielectric layer except the metal binding region. The second dielectric layer also includes a second dielectric region distributed around the first dielectric region, and the second dielectric region is arranged corresponding to a partial region of the metal binding region.
7. The display panel according to any one of claims 1 to 6, characterized in that: The protective film layer is made of indium tin oxide.
8. A method for preparing a display panel, characterized in that: The method comprises: forming a first metal layer on one side of a substrate, and forming a first dielectric layer on a side of the first metal layer away from the substrate; removing the dielectric material in a predetermined area of the first dielectric layer and preparing a metal binding area in the predetermined area; A protective film layer is prepared on a side of the metal binding area away from the substrate, and a pixel anode layer is prepared on a side of the protective film layer away from the substrate.
9. The method for manufacturing a display panel according to claim 8, wherein: The step of preparing a protective film layer on a side of the metal binding area away from the substrate comprises: The metal binding area is etched based on a preset pattern, and a protective film layer is prepared on the side of the etched metal binding area away from the substrate, wherein the protective film layer includes a first area that is bonded to the side of the metal binding area away from the substrate and a second area that is circumferentially bonded to the metal binding area along a first direction, the first area is connected to the second area, and the first direction is a direction perpendicular to the orthographic projection direction.
10. The method for manufacturing a display panel according to claim 8, wherein: The step of preparing a protective film layer on a side of the metal binding area away from the substrate comprises: preparing a protective film layer on a side of the metal binding area away from the substrate; Based on a preset pattern, the metal binding area is first etched, and then the protective film layer is etched. The protective film layer includes an area that is attached to the side of the metal binding area away from the substrate and an extension area along a first direction, and the first direction is a direction perpendicular to the orthographic projection direction.
11. A display module, characterized in that: The display panel comprises the display panel according to any one of claims 1 to 7.