Method for manufacturing semiconductor device, substrate, and semiconductor element

Abstract

This method for manufacturing a semiconductor device has a step for laminating a semiconductor element on a substrate by bringing a solder layer in the semiconductor element into contact with the tip of a metal protrusion in the substrate with a resin film interposed between the semiconductor element and the substrate, the semiconductor element is provided with a bump electrode having the solder layer at the tip thereof, and the substrate is provided with an electrode pad having the metal bump on the surface thereof on the surface facing the surface of the semiconductor element provided with the bump electrode; and a step in which the substrate and the semiconductor element are connected by melting the solder layer by heating.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a semiconductor device, a substrate, and a semiconductor element. Background Art

[0002] As a method for mounting semiconductor elements on a substrate, a wire bonding connection method using a thin metal wire such as a gold wire has been known. On the other hand, in order to meet the requirements for miniaturization, thinness, high functionality, high integration, and high speed of semiconductor devices, a flip chip connection method (FC connection method) is becoming popular, which connects semiconductor elements and electrodes on a substrate via protruding electrodes called bumps provided in semiconductor elements. In order to connect semiconductor elements to substrates, the FC connection method is widely used in BGA (Ball Grid Array), CSP (Chip Size Package), etc. The COB (Chip On Board) type connection method also belongs to the FC connection method. In addition, the FC connection method is also widely used in the COC (Chip On Chip) type connection method (for example, refer to Patent Document 1) for connecting semiconductor elements.

[0003] In order to meet the requirements for further miniaturization, thinning and high functionality of semiconductor devices, chip stacking packages and POP (Package On Package) that are stacked and multi-segmented through the above-mentioned connection method are becoming popular. In addition, the TSV (Through-Silicon Via) method has also begun to become widely popular. This stacking and multi-segment technology can reduce the packaging area compared to the method of configuring semiconductor elements in two dimensions because semiconductor elements are configured three-dimensionally. In particular, TSV technology is also effective in improving semiconductor performance, reducing noise, reducing packaging area and saving power, and has attracted attention as a new generation of semiconductor wiring technology.

[0004] In addition, when the semiconductor device is manufactured by the FC connection method, the thermal stress generated by the difference in thermal expansion coefficient between the semiconductor element and the substrate or the difference in thermal expansion coefficient between the semiconductor elements is sometimes concentrated in the connection portion and causes poor connection. In order not to cause poor connection caused by the difference in thermal expansion coefficient, it is effective to use an adhesive composition to seal the gap between two adjacent circuit components (semiconductor element, substrate, etc.). In particular, since components with different thermal expansion coefficients are often used in semiconductor elements and substrates, it is necessary to use an adhesive composition to seal the semiconductor device to improve thermal shock resistance.

[0005] FC connection methods using adhesive compositions can be roughly divided into the Capillary-Flow method and the Pre-Applied method (for example, refer to Patent Documents 2 to 6). The Capillary-Flow method is a method in which a liquid adhesive composition is injected into the gap between the semiconductor element and the substrate using the capillary phenomenon after the semiconductor element and the substrate are connected. The Pre-Applied method is a method in which a paste or film-like adhesive composition is supplied to the semiconductor element or the substrate before the semiconductor element and the substrate are connected.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Publication No. 2008-294382

[0009] Patent Document 2: Japanese Patent Application Publication No. 2001-223227

[0010] Patent Document 3: Japanese Patent Application Publication No. 2002-283098

[0011] Patent Document 4: Japanese Patent Application Publication No. 2005-272547

[0012] Patent Document 5: Japanese Patent Application Publication No. 2006-169407

[0013] Patent Document 6: Japanese Patent Application Publication No. 2006-188573 Summary of the invention

[0014] Technical problem to be solved by the invention

[0015] Generally speaking, in the manufacture of semiconductor devices in the Pre-Applied method using an adhesive composition (bottom fill material), the bottom fill material is applied between the semiconductor element and the substrate and the bottom fill material is heated and cured. Currently, in this method, the bottom fill material is applied between the semiconductor element and the substrate and the bottom fill material is heated and cured for each semiconductor device. Therefore, the manufacturing production efficiency of semiconductor devices using bottom fill materials in the current Pre-Applied method is poor, and improving production efficiency has become an important issue.

[0016] In particular, when a resin film is used as the bottom filling material, the resin film may be sandwiched between the tip of the protruding electrode and the electrode on the substrate, resulting in poor connection between the semiconductor element and the substrate. In addition, in order to suppress the sandwiching of the resin film, there is a tendency for the pressure applied when joining the semiconductor element and the substrate to increase, and there is also a tendency for the pressurization time to increase.

[0017] In addition, with the progress of miniaturization of semiconductor devices in recent years, the pitch of protruding electrodes has been narrowed and miniaturized. Therefore, when the semiconductor element is temporarily mounted on the substrate and soldered by reflow, the position of the connection part may be shifted due to the vibration during the reflow process as a connection process and the handling method of the substrate. For those who have multi-staged semiconductor elements using the TSV method, the semiconductor elements are very unstable after temporary mounting, so there is a tendency for positional shifts to occur at the connection part.

[0018] The present disclosure is completed in view of the above-mentioned existing facts, and its purpose is to provide a method for manufacturing a semiconductor device that can suppress the inclusion of a resin film when a semiconductor element is connected to a substrate or when semiconductor elements are connected to each other, as well as a substrate and a semiconductor element that can be used in the manufacturing method.

[0019] Means for solving technical problems

[0020] The specific means for achieving the above-mentioned object are as follows.

[0021] <1> A method for manufacturing a semiconductor device comprises the following steps:

[0022] The step of laminating the semiconductor element on the substrate by bringing the solder layer in the semiconductor element into contact with the front end of the metal protrusion in the substrate while a resin film is interposed between the semiconductor element and the substrate, wherein the semiconductor element includes a protruding electrode having the solder layer at the front end, and the substrate includes an electrode pad having the metal protrusion on the surface opposite to the surface of the semiconductor element having the protruding electrode, and

[0023] A step of melting the solder layer by heating to connect the substrate and the semiconductor element.

[0024] <2> according to <1> The method for manufacturing a semiconductor device, wherein:

[0025] The semiconductor element stacked on the substrate includes an electrode pad having a metal protrusion on the surface opposite to the surface having the protruding electrode.

[0026] On the semiconductor element stacked on the substrate, a plurality of semiconductor elements each having a protruding electrode having a solder layer at the front end on one surface side and an electrode pad having a metal protrusion on the surface on the other surface side are stacked in a state where the resin film is interposed between one semiconductor element and another semiconductor element so that the solder layer in one semiconductor element is in contact with the front end of the metal protrusion in another semiconductor element, and this step is repeated, thereby stacking a plurality of semiconductor elements on the semiconductor element stacked on the substrate.

[0027] The solder layer is melted by heating, thereby connecting the substrate and the plurality of semiconductor elements together.

[0028] <3> according to <1> or <2> The method for manufacturing a semiconductor device comprises heating the solder layer at a temperature below the melting temperature of the solder constituting the solder layer while bringing the solder layer and the front end of the metal protrusion into contact with each other with the resin film interposed therebetween.

[0029] <4> according to <1> ~ <3> A method for manufacturing a semiconductor device as described in any one of the above, wherein the above-mentioned protruding electrode has a pillar and the above-mentioned solder layer arranged at the front end of the above-mentioned pillar, and the total value of the average height of the above-mentioned pillar and the average height of the above-mentioned metal protrusion is smaller than the value of the average thickness of the above-mentioned resin film.

[0030] <5> according to <4> In the method for manufacturing a semiconductor device, an average height of the pillars is less than 20 μm.

[0031] <6> according to <1> ~ <5> The method for manufacturing a semiconductor device as described in any one of the above, wherein the front end of the metal protrusion is an acute angle.

[0032] <7> according to <1> ~ <6> The method for manufacturing a semiconductor device according to any one of the preceding claims, wherein the resin film contains a thermosetting resin.

[0033] <8> according to <7> In the method for manufacturing a semiconductor device, the thermosetting resin comprises at least one selected from epoxy resin, polyamic acid and polyhydroxyamide.

[0034] <9> according to <1> ~ <6> In any one of the methods for manufacturing a semiconductor device, the resin film includes a thermoplastic resin.

[0035] <10> according to <9> The method for manufacturing a semiconductor device, wherein the thermoplastic resin comprises at least one selected from the group consisting of polyimide, polyamide, polycarbonate, polyacetal, polyphenylene ether, polybutylene terephthalate, polytetrafluoroethylene, polyphenylene sulfide, polysulfone, polyethersulfone, polyarylate, polyamideimide, polyetherimide, polyetheretherketone, acrylic resin, phenoxy resin, polyester, polyurethane, polybenzoxazole and polybutadiene.

[0036] <11> according to <1> ~ <10> The method for manufacturing a semiconductor device according to any one of the preceding claims, wherein the resin film contains an inorganic filler.

[0037] <12> according to <11> In the method for manufacturing a semiconductor device, the content of the inorganic filler is 10% by mass to 80% by mass based on the total amount of the resin film.

[0038] <13> according to <1> ~ <12> The method for manufacturing a semiconductor device according to any one of the above-mentioned embodiments, wherein the resin film has a viscosity at 130° C. of 500 mPa·s to 4000 mPa·s.

[0039] <14> A substrate includes an electrode pad having a metal protrusion with an acute-angled tip on its surface.

[0040] <15> A semiconductor element includes an electrode pad having a metal protrusion with an acute-angled tip on its surface.

[0041] Effects of the Invention

[0042] According to the present disclosure, it is possible to provide a method for manufacturing a semiconductor device that can suppress the sandwiching of a resin film when a semiconductor element is connected to a substrate or when semiconductor elements are connected to each other, and a substrate and a semiconductor element that can be used in the manufacturing method. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 It is a diagram for explaining the method for manufacturing the semiconductor device according to the first embodiment.

[0044] Figure 2 It is a cross-sectional view showing a cross section of a modified example of the substrate 10 of the first embodiment.

[0045] Figure 3 It is a diagram for explaining the method for manufacturing the semiconductor device according to the first embodiment.

[0046] Figure 4 It is a diagram for explaining the method for manufacturing the semiconductor device according to the first embodiment.

[0047] Figure 5 It is a diagram for explaining the method for manufacturing the semiconductor device according to the second embodiment.

[0048] Figure 6 It is a diagram for explaining the method for manufacturing the semiconductor device according to the second embodiment.

[0049] Figure 7 It is a diagram for explaining the method for manufacturing the semiconductor device according to the second embodiment. DETAILED DESCRIPTION

[0050] The following is a detailed description of the embodiments of the present disclosure. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the constituent elements (including element steps, etc.) are not required unless otherwise specifically indicated. The numerical values ​​and their ranges are also the same and do not limit the present disclosure.

[0051] In the present disclosure, the term "step" includes not only steps that are independent of other steps, but also steps that cannot be clearly distinguished from other steps as long as the purpose of the step can be achieved.

[0052] In the present disclosure, a numerical range expressed using “to” includes the numerical values ​​described before and after “to” as the minimum value and the maximum value, respectively.

[0053] In the numerical ranges described stepwise in the present disclosure, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise.

[0054] In the present disclosure, each component may contain a plurality of substances corresponding thereto. When a plurality of substances corresponding to each component are present in the composition, the content rate or content of each component refers to the total content rate or total content of the plurality of substances present in the composition unless otherwise specified.

[0055] In the present disclosure, particles corresponding to each component may include multiple types of particles. When multiple types of particles corresponding to each component are present in the composition, the particle size of each component refers to the value of a mixture of the multiple types of particles present in the composition unless otherwise specified.

[0056] In the present disclosure, the term "layer" or "film" means that when observing a region where the layer or film exists, it includes the case where the layer or film is formed in the entire region as well as the case where the layer or film is formed in only a part of the region.

[0057] In the present disclosure, the term "stacked" means overlapping layers, and two or more layers may be bonded together, or two or more layers may be detachable.

[0058] In the present disclosure, the average thickness of a layer or a film refers to a value obtained by measuring the thickness at five points of the target layer or film and calculating the arithmetic average thereof.

[0059] The thickness of a layer or film can be measured using a micrometer or the like. In the present disclosure, when the thickness of a layer or film can be directly measured, a micrometer is used for measurement. On the other hand, when measuring the thickness of a layer or the total thickness of a plurality of layers, it can also be measured by observing the cross section of the measurement object using an electron microscope.

[0060] <Method for Manufacturing Semiconductor Device>

[0061] The manufacturing method of the semiconductor device disclosed in the present invention has the following steps: a step of stacking the semiconductor element on the substrate by bringing the solder layer in the semiconductor element into contact with the front end of the metal protrusion in the substrate while a resin film is interposed between the semiconductor element and the substrate (hereinafter sometimes referred to as a contact process), wherein the semiconductor element has a protruding electrode having the solder layer at the front end, and the substrate has an electrode pad having the metal protrusion on the surface opposite to the surface of the semiconductor element having the protruding electrode; and a step of melting the solder layer by heating to connect the substrate to the semiconductor element (hereinafter sometimes referred to as a connection process).

[0062] According to the method for manufacturing a semiconductor device disclosed in the present disclosure, it is possible to suppress the sandwiching of the resin film when connecting a semiconductor element to a substrate or when connecting semiconductor elements to each other. Although the reason for this is not clear, it is presumed as follows.

[0063] In the manufacturing method of the semiconductor device disclosed in the present invention, a semiconductor element having a protruding electrode with a solder layer at the front end and a substrate having an electrode pad with a metal protrusion on the surface are used in the contact process. Since the metal protrusion exists on the surface of the electrode pad of the substrate, when the solder layer at the front end of the protruding electrode provided in the semiconductor element is brought into contact with the front end of the metal protrusion in the substrate, the front end of the metal protrusion pushes the resin film away while contacting the solder layer. Therefore, it can be inferred that it becomes difficult for the resin film to be sandwiched between the protruding electrode of the semiconductor element and the electrode pad of the substrate. When connecting semiconductor elements, it can be inferred that it becomes difficult for the resin film to be sandwiched between the protruding electrode and the electrode pad for the same reason.

[0064] Since the resin film becomes difficult to be sandwiched between the protruding electrode and the electrode pad, there is a tendency that the occurrence of poor connection is more likely to be suppressed.

[0065] In the present disclosure, “connection” means that a semiconductor element and a substrate or semiconductor elements are electrically connected via protruding electrodes and electrode pads.

[0066] The following is a reference to the attached Figure 1An embodiment of the method for manufacturing a semiconductor device disclosed in the present invention is described in detail. In the following description, the same or equivalent parts are marked with the same symbols, and repeated descriptions are omitted. In addition, the positional relationship such as up, down, left, and right is based on the positional relationship shown in the drawings unless otherwise specified. Furthermore, the dimensional ratios of the drawings are not limited to the ratios shown in the drawings.

[0067] [First embodiment]

[0068] according to Figure 1 to Figure 4 A method for manufacturing a semiconductor device according to a first embodiment of the present disclosure will be described. In the method for manufacturing a semiconductor device according to the first embodiment, one semiconductor element is stacked in the thickness direction of a substrate.

[0069] Figure 1 1 is a cross-sectional view showing the cross sections of a substrate 10 and a semiconductor element 20 used in the method for manufacturing a semiconductor device according to the first embodiment. Figure 1 The state before the semiconductor element 20 and the substrate 10 are connected is shown.

[0070] The semiconductor element 20 includes a semiconductor element body 21 and a plurality of protruding electrodes 26 including pillars 22 disposed on one surface of the semiconductor element body 21 and solder layers 24 provided at the distal ends of the pillars 22 .

[0071] In addition, the substrate 10 has a substrate body 11 and a plurality of electrode pads 16 , wherein the electrode pads include an electrode pad body 12 arranged on a surface of the substrate body 11 that faces a surface of the semiconductor element 20 that includes the protruding electrode 26 , and a metal protrusion 14 provided on a surface of the electrode pad body 12 .

[0072] Furthermore, the resin film 30 is disposed on one surface of the semiconductor element 20 (that is, the surface facing the substrate 10 ), so that the resin film 30 is interposed between the semiconductor element 20 and the substrate 10 .

[0073] The type of semiconductor element body 21 is not particularly limited, and element semiconductors composed of the same element such as silicon and germanium, compound semiconductors such as gallium arsenide and indium phosphide, etc. can be used. Chips (die) themselves that are not packaged with resins or the like, and semiconductor packages such as CSP and BGA that are packaged with resins or the like can also be cited.

[0074] The protruding electrode 26 is not particularly limited as long as the tip has the solder layer 24. In the first embodiment, the protruding electrode 26 is formed by a combination of the support 22 and the solder layer 24 provided at the tip of the support 22, but the configuration of the protruding electrode 26 is not limited thereto.

[0075] The interval between the protruding electrodes 26 is not particularly limited, but is, for example, preferably 1 μm to 100 μm, more preferably 10 μm to 70 μm, and further preferably 30 μm to 50 μm.

[0076] The thickness of the solder layer 24 is not particularly limited, and is, for example, preferably 0.1 μm to 50 μm, more preferably 1 μm to 30 μm, and further preferably 5 μm to 20 μm. If the thickness of the solder layer 24 is greater than 0.1 μm, the penetration amount of the metal protrusion 14 in the solder layer 24 can be sufficiently ensured, and the temporary fixing force is difficult to reduce. Therefore, there is a tendency that the position of the semiconductor element 20 in the subsequent process is difficult to shift. If the thickness of the solder layer 24 is less than 50 μm, there is a tendency that the processing time for connecting the substrate 10 and the semiconductor element 20 by heating to melt the solder layer 24 is not easy to be extended. In addition, there is a tendency that a short circuit between adjacent electrodes when connecting the substrate 10 and the semiconductor element 20 is difficult to occur.

[0077] The average height of the pillars 22 is not particularly limited, and is preferably 20 μm or less, more preferably 0.1 μm to 20 μm, and further preferably 2 μm to 10 μm. By making the average height of the pillars 22 less than 20 μm, there is a tendency to suppress the height of the semiconductor device as a whole when the semiconductor elements 20 are stacked. In addition, when the average height of the pillars 22 is less than 20 μm, the height variations of the individual pillars 22 tend to increase relatively. In the method for manufacturing a semiconductor device disclosed in the present invention, since the solder layer 24 provided at the front end of the protruding electrode 26 is in contact with the front end of the metal protrusion 14, the front end of the metal protrusion 14 can penetrate into the solder layer 24 to absorb the height variations of the individual pillars 22, thereby tending to further improve the connection reliability.

[0078] When the protruding electrode 26 is composed of a support 22 and a solder layer 24 provided at the front end of the support 22, the support 22 having a metal layer mainly composed of gold, silver, copper, tin, nickel, etc. can be formed by, for example, plating. The metal layer constituting the support 22 may include a single component or a plurality of components. In addition, the metal layer may be a single-layer structure or a stacked structure in which a plurality of metal layers are stacked. As the material of the support 22, copper can be preferably used because of its low electrical resistance and high corrosion resistance.

[0079] As the solder material constituting the solder layer 24, tin-silver solder, tin-lead solder, tin-bismuth solder, tin-copper solder, gold-copper solder, tin-silver-copper solder, etc. can be used. From the viewpoint of environmental issues and safety, lead-free solders such as gold-copper solder, tin-copper solder, tin-bismuth solder, tin-silver solder, tin-silver-copper solder, etc. can be preferably used.

[0080] When forming the solder layer 24 on the copper pillar 22, from the viewpoint of improving connection reliability, in order to suppress diffusion between metal components, a nickel layer may be formed between the copper pillar 22 and the solder layer 24. In addition, in order to facilitate the metal protrusion 14 of the electrode pad 16 to penetrate into the solder layer 24, after forming the solder layer 24 on the front end of the pillar 22 by plating, printing, etc., it is also necessary to heat the solder layer 24.

[0081] The type of the substrate body 11 is not particularly limited, and examples thereof include organic substrates including fiber substrates such as FR4 and FR5, laminated organic substrates without fiber substrates, wiring boards having conductor wiring including connection electrodes formed on substrates including organic films such as polyimide and polyester, and inorganic materials such as alumina, glass, and silicon. Circuits, substrate electrodes, and the like may also be formed on the substrate body 11 using a semi-additive method, a subtractive method, or the like.

[0082] The substrate body 11 may also be silicon (Si). There are no restrictions on the size, thickness, etc. of a silicon (Si) substrate. As a silicon (Si) substrate, a wafer having a conductor wiring including a connection electrode formed on the surface can be cited. In addition, wiring, transistors, other electronic components, through-hole electrodes (TSV), etc. can also be formed on a silicon (Si) substrate.

[0083] The electrode pad body 12 may be a conductive wiring formed on the surface of the substrate body 11 by a semi-additive method, a subtractive method, or the like.

[0084] The metal protrusion 14 may be formed on the surface of the electrode pad body 12 by using a photolithography method.

[0085] When the metal protrusion 14 is formed on the surface of the electrode pad 12 using photolithography technology, it can be formed by applying a photosensitive photoresist to the surface of the electrode pad body 12 where the seed layer remains, exposing, developing, plating, stripping the photoresist, and etching the seed layer. The method of forming the metal protrusion 14 on the surface of the electrode pad body 12 is not limited to the above method.

[0086] As a method for forming the metal protrusion 14, in addition to the method of forming it using photolithography, there can also be a method of using ball bonding to weld metal wires such as gold and copper to electrode pads to form them into columns and cut them into specific lengths; a method of forming them using a 3D printer; a method of forming them using cutting processing, etc.

[0087] The material of the metal protrusion 14 is not particularly limited, and various metals such as copper and nickel can be used. When copper is used as the material of the metal protrusion 14, the heat dissipation effect at the connection between the substrate 10 and the semiconductor element 20 tends to be improved and the connection impedance tends to be reduced.

[0088] In order to ensure reliable connection between the substrate 10 and the semiconductor element 20 , the surface of the metal protrusion 14 may be subjected to gold plating, nickel / gold plating, OSP (Organic Solderability Preservatives) treatment, or the like.

[0089] The shape of the metal protrusion 14 is not particularly limited. Examples of the shape of the metal protrusion 14 include a cylinder, a cube, a triangular prism, etc. In addition, the metal protrusion 14 may be a shape in which at least two shapes of a cylinder, a cube, a triangular prism, etc. are overlapped in the height direction.

[0090] In addition, the front end of the metal protrusion 14 may be an acute angle. Examples of the metal protrusion 14 with an acute angle at the front end include cones such as cones, triangular pyramids, and quadrangular pyramids, and shapes in which cones are arranged on a column, but the shape is not limited to these. When the front end of the metal protrusion 14 is an acute angle, there is a tendency to more easily suppress the resin film from being caught. Figure 2 It is a cross-sectional view showing a cross section of a modified example of the substrate 10 of the first embodiment. Figure 2 In the illustrated substrate 10 , the metal protrusion 14 is a cone.

[0091] In addition, among the components constituting the resin film, an inorganic filler can be cited as a component that is easily sandwiched between the protruding electrode and the electrode pad. When the front end of the metal protrusion 14 is an acute angle, even if a resin film with a high content of inorganic filler is used, there is a tendency to more easily suppress the sandwiching of the resin film. Therefore, by using a metal protrusion 14 with an acute angle at the front end, there is a tendency to increase the content of the inorganic filler in the resin film 30. From this point of view, the content of the inorganic filler in the resin film 30 can be 50% to 90% by mass based on the total amount of the resin film 30.

[0092] In addition, the metal protrusion 14 can easily penetrate the solder layer 24, and the metal protrusion 14 and the solder layer 24 of the protruding electrode 26 can be well engaged with each other, thereby increasing the strength against external forces during the reflow process and making it difficult for the semiconductor element 20 to shift position in the subsequent process.

[0093] In addition, the electrode pad 16 may have two or more metal protrusions 14 on the surface of the electrode pad body 12. When there are two or more metal protrusions 14 on the surface, the shapes of the metal protrusions 14 may be the same or different.

[0094] The thickness of the solder layer 24 of the protruding electrode 26 is preferably greater than the height of the metal bump 14 on the electrode pad 16 . This allows the metal bump 14 to easily penetrate the solder layer 24 .

[0095] When the metal protrusion 14 penetrates into the solder layer 24 as deeply as possible, the strength of the temporary fixing force can be increased, and the positional deviation of the connection portion can be further suppressed. The average height of the metal protrusion 14 is not particularly limited. From the perspective of increasing the penetration amount of the metal protrusion 14 in the solder layer 24 and the perspective of industrial productivity, it is preferably 0.1μm to 50μm, more preferably 0.5μm to 30μm, and further preferably 1μm to 10μm. In order to improve the wettability of the solder when the connection between the metal protrusion 14 and the protruding electrode 26 is formed by melting the solder, a gold-containing layer mainly composed of gold can also be formed on the outermost surface of the metal protrusion 14. The method for forming the gold-containing layer is not particularly limited, and plating, sputtering, etc. can be used.

[0096] The composition of the resin film 30 is not particularly limited, and may be a resin composition including a thermoplastic resin, a thermosetting resin, an inorganic filler, etc. The resin composition constituting the resin film 30 may further include a flux component for improving connectivity between the protruding electrodes and the electrode pads as required.

[0097] When the resin film 30 includes a thermoplastic resin, the thermoplastic resin preferably includes at least one selected from polyimide, polyamide, polycarbonate, polyacetal, polyphenylene ether, polybutylene terephthalate, polytetrafluoroethylene, polyphenylene sulfide, polysulfone, polyethersulfone, polyarylate, polyamideimide, polyetherimide, polyetheretherketone, acrylic resin, phenoxy resin, polyester, polyurethane, polybenzoxazole and polybutadiene.

[0098] When the resin film 30 includes a thermosetting resin, the thermosetting resin preferably includes at least one selected from epoxy resin, polyamic acid, and polyhydroxyamide. Among them, polyimide is generated by the curing reaction of polyamic acid. Polybenzoxazole is generated by the curing reaction of polyhydroxyamide.

[0099] When the resin film 30 includes an inorganic filler, examples of the inorganic filler include insulating inorganic fillers such as glass, silica, alumina, titanium oxide, mica, and boron nitride; and conductive inorganic fillers such as carbon black. Among them, it is preferred to use an insulating inorganic filler selected from silica, alumina, titanium oxide, and boron nitride; or an insulating inorganic filler selected from silica, alumina, and boron nitride. The inorganic filler may also be a whisker, and examples thereof include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate, and boron nitride. These inorganic fillers may be used alone or in combination of two or more.

[0100] The resin film 30 may further contain a resin filler (organic filler). When the resin film 30 contains a resin filler, an inorganic filler may be used together or not. Examples of the resin filler include polyurethane resin, polyimide resin, methyl methacrylate resin, and methyl methacrylate-butadiene-styrene copolymer resin (MBS). These resin fillers may be used alone or in combination of two or more.

[0101] The inorganic filler and the resin filler may have their physical properties appropriately adjusted by surface treatment.

[0102] The resin film 30 preferably contains an epoxy resin from the viewpoint of having an excellent balance among various properties such as handleability, formability, electrical properties, moisture resistance, heat resistance, mechanical properties, and adhesiveness.

[0103] The following describes a case where the resin film 30 includes epoxy resin.

[0104] The epoxy resin is not particularly limited as long as it has two or more epoxy groups in the molecule. As the epoxy resin, various multifunctional epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin, novolac type epoxy resin, cresol novolac type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, triphenylmethane type epoxy resin, dicyclopentadiene type epoxy resin, etc. can be used. These substances can be used alone or in combination of two or more.

[0105] The weight average molecular weight of the epoxy resin is not particularly limited, but is preferably less than 10,000.

[0106] In the present disclosure, the weight average molecular weight is measured by gel permeation chromatography (GPC) and derived by conversion using a calibration curve of standard polystyrene. The conditions of GPC are as follows.

[0107] -GPC conditions-

[0108] Pump: Hitachi L-6000 type (manufactured by Hitachi Manufacturing Co., Ltd.)

[0109] Chromatographic columns: 3 in total

[0110] Gelpack GL-R420

[0111] Gelpack GL-R430

[0112] Gelpack GL-R440

[0113] (The above are product names manufactured by Showa Denko Materials Co., Ltd.)

[0114] Eluent: Tetrahydrofuran

[0115] Measurement temperature: 25℃

[0116] Flow rate: 2.05mL / min

[0117] Detector: Hitachi L-3300 RI (manufactured by Hitachi, Ltd.)

[0118] The content of the epoxy resin is, for example, 5 mass % to 75 mass %, preferably 10 mass % to 50 mass %, and more preferably 15 mass % to 35 mass % based on the total amount of the resin film 30 .

[0119] When the resin film 30 includes an epoxy resin, the resin film 30 may further include a curing agent.

[0120] As the curing agent, for example, phenolic resin curing agents, acid anhydride curing agents, amine curing agents, imidazole curing agents and phosphine curing agents can be cited. From the viewpoint of showing the flux activity of suppressing the generation of an oxide film in the protruding electrode 26 or the electrode pad 16 and improving the connection reliability and insulation reliability, it is preferred that the curing agent contains at least one selected from the group consisting of phenolic resin curing agents, acid anhydride curing agents, amine curing agents and imidazole curing agents. The following describes each curing agent.

[0121] The phenolic resin curing agent is not particularly limited if it has two or more phenolic hydroxyl groups in the molecule, and examples thereof include phenol novolac resins, cresol novolac resins, phenol aralkyl resins, cresol naphthol formaldehyde polycondensates, triphenylmethane type multifunctional phenolic resins and various multifunctional phenolic resins. These substances can be used alone or as a mixture of two or more.

[0122] The equivalent ratio (phenolic hydroxyl group / epoxy group, molar ratio) of the phenolic resin curing agent to the epoxy resin is preferably 0.3 to 1.5, more preferably 0.4 to 1.0, and further preferably 0.5 to 1.0 from the viewpoint of good curability, adhesion, and storage stability. If the equivalent ratio is 0.3 or more, there is a tendency that the curability and adhesion are improved, and if it is 1.5 or less, there is a tendency that unreacted phenolic hydroxyl groups do not remain excessively, the water absorption rate is suppressed to a very low level, and the insulation reliability of the semiconductor device is improved. If the equivalent ratio is 0.3 to 1.5, it is easy to adjust the gel time to an appropriate range.

[0123] Examples of the acid anhydride curing agent include methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, and ethylene glycol bis(anhydrotrimellitate). These can be used alone or as a mixture of two or more.

[0124] The equivalent ratio (anhydride group / epoxy group, molar ratio) of the anhydride curing agent to the epoxy resin is preferably 0.3 to 1.5, more preferably 0.4 to 1.0, and further preferably 0.5 to 1.0 from the viewpoint of good curability, adhesion, and storage stability. If the equivalent ratio is 0.3 or more, there is a tendency for improved curability and improved adhesion, and if it is 1.5 or less, there is a tendency that unreacted anhydride does not remain excessively, the water absorption rate is suppressed to a very low level, and the insulation reliability of the semiconductor device is improved. If the equivalent ratio is 0.3 to 1.5, it is easy to adjust the gel time to an appropriate range.

[0125] As the amine-based curing agent, for example, dicyandiamide can be used.

[0126] The equivalent ratio (amino group / epoxy group, molar ratio) of the amine curing agent to the epoxy resin is preferably 0.3 to 1.5, more preferably 0.4 to 1.0, and further preferably 0.5 to 1.0 from the viewpoint of good curability, adhesion, and storage stability. When the equivalent ratio is 0.3 or more, there is a tendency for improved curability and improved adhesion, and when it is 1.5 or less, there is a tendency that unreacted amine does not remain excessively and the insulation reliability of the semiconductor device is improved. When the equivalent ratio is 0.3 to 1.5, it is easy to adjust the gel time to an appropriate range.

[0127] Examples of the imidazole curing agent include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazole trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-Undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and adducts of epoxy resins and imidazoles. From the viewpoint of excellent curability, storage stability and connection reliability, an imidazole curing agent can be selected from 1-cyanoethyl-2-undecyl imidazole, 1-cyano-2-phenyl imidazole, 1-cyanoethyl-2-undecyl imidazole trimellitate, 1-cyanoethyl-2-phenyl imidazole trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole. These substances can be used alone or in combination of two or more. Microcapsules containing them can also be used as latent curing agents.

[0128] The content of the imidazole curing agent is preferably 0.1 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and further preferably 3.2 to 5.5 parts by mass relative to 100 parts by mass of the epoxy resin. When the content of the imidazole curing agent is 0.1 parts by mass or more, the curability of the resin film 30 tends to be improved, and when it is 20 parts by mass or less, poor connection tends to be less likely to occur. When the content of the imidazole curing agent is 0.1 to 20 parts by mass, it is easy to adjust the gel time to an appropriate range.

[0129] Examples of the phosphine-based curing agent include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetrakis(4-methylphenyl)borate, and tetraphenylphosphonium(4-fluorophenyl)borate.

[0130] The content of the phosphine curing agent is preferably 0.1 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the epoxy resin. When the content of the phosphine curing agent is 0.1 parts by mass or more, the curability of the resin film 30 tends to be improved, and when it is 10 parts by mass or less, poor connection tends to be less likely to occur.

[0131] Phenolic resin curing agents, acid anhydride curing agents and amine curing agents can be used alone or as a mixture of two or more. Imidazole curing agents and phosphine curing agents can be used alone or together with phenolic resin curing agents, acid anhydride curing agents or amine curing agents.

[0132] The resin film 30 may further include a soldering flux. The soldering flux is preferably a compound having two carboxyl groups (dicarboxylic acid). Compared with a compound having one carboxyl group (monocarboxylic acid), a compound having two carboxyl groups is less likely to volatilize even at high temperatures during connection, and the occurrence of pores can be further suppressed. In addition, when a compound having two carboxyl groups is used, the viscosity increase of the resin film 30 during storage and connection operations can be further suppressed compared to when a compound having three or more carboxyl groups is used. As a result, the connection reliability of the semiconductor device can be further improved.

[0133] As the soldering flux, for example, a compound in which an electron-donating group is substituted at the 2-position of a dicarboxylic acid selected from succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, and dodecanedioic acid can be used.

[0134] The melting point of the flux is preferably below 150°C, more preferably below 140°C, and further preferably below 130°C. Such flux fully exhibits flux activity before the curing reaction between the epoxy resin and the curing agent occurs. Therefore, a semiconductor device with better connection reliability can be realized by using the resin film 30 containing such flux. In addition, the above-mentioned flux is preferably solid at room temperature, and the melting point of the flux is preferably above 25°C, more preferably above 50°C. The melting point of the flux can be measured, for example, by using a device in which a capillary filled with a sample is installed on a double-tube thermometer and heated in a warm bath.

[0135] The content of the flux is preferably 0.5% by mass to 10% by mass, and more preferably 0.5% by mass to 5% by mass, based on the total amount of the resin film 30 .

[0136] The resin film 30 may further contain a polymer component.

[0137] The polymer component is made of the polymer that is different from epoxy resin. As this polymer component, for example, phenoxy resin, polyimide, polyamide, polycarbodiimide, cyanate ester, acrylic resin, polyester, polyethylene, polyether sulfone, polyetherimide, polyvinyl acetal, polyurethane and acrylic rubber can be enumerated. From the viewpoint of heat resistance and film formation excellence, as polymer component, preferably phenoxy resin, polyimide, acrylic rubber, cyanate ester and polycarbodiimide, more preferably phenoxy resin, polyimide and acrylic rubber. This polymer component can also be used alone or as a mixture or copolymer of more than 2 kinds and use.

[0138] The weight average molecular weight of the polymer component is not particularly limited, but is preferably not less than 10000. In this case, the resin film 30 containing the polymer component is more excellent in heat resistance and film formability.

[0139] The weight average molecular weight of the polymer component is preferably 30,000 or more, more preferably 40,000 or more, and further preferably 50,000 or more, from the viewpoint of imparting good film formability to the resin film 30 alone, facilitating the shape of the resin film 30, and efficiently manufacturing the semiconductor device.

[0140] When the resin film 30 contains a polymer component having a weight average molecular weight of 10,000 or more, the ratio Ca / Cd (mass ratio) of the content Ca of the epoxy resin to the content Cd of the polymer component having a weight average molecular weight of 10,000 or more is preferably 0.01 to 5, more preferably 0.05 to 3, and further preferably 0.1 to 2. By making the ratio Ca / Cd 0.01 or more, better curability and adhesiveness can be obtained. In addition, by making the ratio Ca / Cd 5 or less, better film formability can be obtained in the resin film 30.

[0141] When the resin film 30 contains an inorganic filler, specific examples of the inorganic filler are as described above.

[0142] The content of the inorganic filler is preferably 10 to 80% by mass, more preferably 15 to 60% by mass, based on the total amount of the resin film 30 from the viewpoint of adjusting the minimum melt viscosity of the resin film 30 to an appropriate range.

[0143] The resin film 30 may further include other components such as an ion capture agent, an antioxidant, a silane coupling agent, a titanium coupling agent, and a leveling agent. These substances may be used alone or in combination of two or more. The amount of these substances may be appropriately adjusted according to the effect of each additive.

[0144] The average thickness of the resin film 30 is not particularly limited and can be appropriately set based on the volume of the gap space between the substrate 10 and the semiconductor element 20 when the substrate 10 and the semiconductor element 20 are connected to form a semiconductor device, the volume of the solder fillet formed by the leakage of the components of the resin film 30 around the semiconductor element 20, etc.

[0145] For example, the average thickness of the resin film 30 may be set so that the total value of the average height of the pillars 22 and the average height of the metal protrusions 14 is smaller than the average thickness of the resin film 30 .

[0146] The average thickness of the resin film 30 is, for example, preferably 1 μm to 100 μm, more preferably 5 μm to 70 μm, and further preferably 10 μm to 50 μm.

[0147] The viscosity of the resin film 30 at 130° C. is preferably 500 mPa·s to 4000 mPa·s, more preferably 700 mPa·s to 3000 mPa·s, and even more preferably 1000 mPa·s to 2000 mPa·s from the viewpoint of fluidity.

[0148] The viscosity of the resin film 30 at 130° C. was measured using a rheometer AR2000 (manufactured by TA Instrument, aluminum cone of 40 mm, shear rate of 32.5 / sec).

[0149] The resin film 30 can be manufactured by applying the components constituting the resin film 30 such as epoxy resin, curing agent, inorganic filler, flux, and a resin varnish containing other components including an organic solvent as needed on a base film to form a coating film, and then drying the coating film.

[0150] The resin varnish is prepared by mixing the components constituting the resin film 30, such as epoxy resin, curing agent, inorganic filler, soldering flux, etc., with an organic solvent, and dissolving or dispersing them by stirring or kneading. The resin varnish is applied to the substrate film subjected to the demolding treatment using, for example, a knife coater, a roller coater, an applicator, a die coater, or a comma roll coater. Thereafter, the organic solvent is reduced from the coating film of the resin varnish by heating, that is, the coating film is dried, and the resin film 30 is formed on the substrate film. Alternatively, the film of the resin varnish can be formed on a semiconductor wafer or the like by a method such as spin coating, and then the resin film 30 is formed on the semiconductor wafer by a method of drying the coating film.

[0151] As the organic solvent used in the preparation of the resin varnish, it is preferred to have a solvent that can uniformly dissolve or disperse each component, for example, dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone and ethyl acetate. These organic solvents can be used alone or in combination of two or more. Stirring and mixing during the preparation of the resin varnish can be carried out using, for example, a stirrer, a grinder, a triple roller, a ball mill, a bead mill or a homogenizer.

[0152] The substrate film is not particularly limited as long as it has heat resistance that can withstand the heating conditions when the organic solvent is volatilized, and examples thereof include polyolefin films such as polypropylene films and polymethylpentene films, polyester films such as polyethylene terephthalate films and polyethylene naphthalate films, polyimide films, polyetherimide films, etc. The substrate film is not limited to a single-layer film formed of these films, and may also be a multilayer film formed of two or more materials.

[0153] The heating for volatilizing the organic solvent from the applied resin varnish may be specifically heating at 50° C. to 200° C. for 0.1 to 90 minutes. The organic solvent may be removed until the residual amount is 1.5% by mass or less within the range of suppressing the generation of voids and not substantially affecting the viscosity adjustment.

[0154] The method of disposing the resin film 30 on the surface of the semiconductor element 20 facing the substrate 10 is not particularly limited.

[0155] For example, a semiconductor element 20 with a resin film 30 can be used in which the resin film 30 is arranged on the surface of the semiconductor element 20 corresponding to the side on which the resin film 30 is arranged in a state of the chip size before dicing so as to cover the protruding electrode 26, and then diced to obtain the obtained semiconductor element 20.

[0156] also, Figure 1 In the embodiment, the resin film 30 is disposed on the surface of the semiconductor element 20 facing the substrate 10 . However, the resin film 30 may be disposed on the surface of the substrate 10 facing the semiconductor element 20 .

[0157] The position where the resin film 30 is disposed can be appropriately selected according to the arrangement of the protruding electrodes 26 on the semiconductor element 20 or the electrode pads 16 on the substrate 10 , and the arrangement of the solder resist that can be applied to the substrate 10 .

[0158] From the viewpoint of ensuring the filling property of the protruding electrodes 26 , the electrode pads 16 and the like and the uniformity of the film thickness of the layer derived from the resin film 30 , the resin film 30 is preferably disposed on the surface of the semiconductor element 20 facing the substrate 10 .

[0159] In order to arrange the resin film 30 on the semiconductor element 20 or the substrate 10, hot roll lamination, diaphragm lamination, hot plate lamination, etc. can be used, and a single method or a combination of multiple methods can be selected. In order to improve the lamination property and make it stable, the lamination process itself can also be performed under a reduced pressure environment.

[0160] Next, in the contact process, the position of the protruding electrode 26 and the metal protrusion 14 provided on the electrode pad 16 facing the protruding electrode 26 are aligned. Figure 3 As shown, the semiconductor element 20 is temporarily mounted on the substrate 10 by applying pressure while the protruding electrode 26 and the electrode pad 16 having the metal protrusion 14 are facing each other, so that the metal protrusion 14 of the electrode pad 16 penetrates into the solder layer 24 of the protruding electrode 26. The temporary mounting of the semiconductor element 20 on the substrate 10 can be performed using flip chip bonding or the like. By temporarily mounting the semiconductor element 20 on the substrate 10 with the resin film 30 interposed therebetween, there is a tendency that the positional displacement of the semiconductor element 20 can be suppressed.

[0161] The magnitude of the pressure applied during pressurization is not particularly limited. As in the general flip chip mounting process, the pressure can be set in consideration of the number of protruding electrodes 26, the uneven height of the protruding electrodes 26, the deformation of the protruding electrodes 26 or the wiring on the substrate 10 caused by pressurization, etc. Specifically, for example, it is preferably set so that the load on each protruding electrode reaches about 1 gf (0.0098 N) to 20 gf (0.196 N). In addition, for example, it is preferably set so that the load applied to one semiconductor element 20 reaches about 5 N to 200 N.

[0162] If the load on each protruding electrode is 0.0098 N or more or the load applied to the semiconductor element 20 is 5 N or more, the temporary fixing force of the semiconductor element 20 on the substrate 10 becomes sufficient, and the positional displacement of the semiconductor element 20 in the subsequent process tends to be less likely to occur. If the load on each protruding electrode is 0.196 N or less or the load applied to the semiconductor element 20 is 200 N or less, there is a tendency to suppress the damage of the semiconductor element 20 due to excessive load.

[0163] When the solder layer 24 is pressed in a state of being in contact with the metal protrusion 14, at least one of the substrate 10 and the semiconductor element 20 may be heated. From the viewpoint of productivity, it is preferred that the solder layer 24 and the front end of the metal protrusion 14 be brought into contact with each other with the resin film 30 interposed therebetween while being heated at a temperature below the melting temperature of the solder constituting the solder layer 24, more preferably brought into contact at a temperature below 210°C, and even more preferably brought into contact at a temperature below 200°C.

[0164] When pressurization is performed while the solder layer 24 is in contact with the metal protrusion 14, a void may be generated between the resin film 30 and the semiconductor element 20 and between the resin film 30 and the substrate 10. If the void remains as it is, it will remain as a void in the semiconductor device. The void can be eliminated by compressing the resin film 30 by pressurization.

[0165] Then, in the connection step, the semiconductor element 20 is stacked and temporarily mounted on the substrate 10, and the solder layer 24 is melted using a heating device such as a reflow device, so that the protruding electrode 26 of the semiconductor element 20 and the electrode pad 16 having the metal protrusion 14 of the substrate 10 are soldered to connect the substrate 10 and the semiconductor element 20. Through the above steps, a Figure 4 The semiconductor device shown has metal protrusions 14 penetrated into solder layer 24. When a resin film containing a thermosetting resin is used as resin film 30, resin film 30 is cured along with solder connection to form a cured resin layer 32 between semiconductor element 20 and substrate 10.

[0166] The heating device is not limited to the reflow oven, and a hot plate, an oven, etc. can be used.

[0167] The heating temperature in the connecting step is preferably a temperature at which the solder melts, more preferably 220° C. or higher, and even more preferably 230° C. or higher.

[0168] The connection step is preferably performed in a nitrogen atmosphere in order to prevent oxidation of the protruding electrode 26 and the electrode pad 16 having the metal bump 14 .

[0169] The connection step may be performed while applying pressure. By connecting the substrate 10 and the semiconductor element 20 while applying pressure, it tends to be easier to suppress the resin film 30 from being sandwiched. The pressing conditions are not particularly limited.

[0170] [Second embodiment]

[0171] Next, according to Figure 5 to Figure 7A method for manufacturing a semiconductor device according to a second embodiment of the present disclosure will be described. In the method for manufacturing a semiconductor device according to the second embodiment, four semiconductor elements are stacked in the thickness direction of a substrate.

[0172] In the second embodiment, if Figure 5 As shown, the semiconductor element body 21 includes an electrode pad 16 having a metal protrusion 14 on its surface on the surface opposite to the surface having a protruding electrode 26 having a solder layer 24 at the tip.

[0173] In the semiconductor element 20 of the second embodiment, the protruding electrode 26 and the electrode pad 16 may be connected to each other by a TSV structure (not shown).

[0174] In the second embodiment, if Figure 6 As shown, on the semiconductor elements 20 stacked on the substrate 10, the resin film 30 is interposed between one semiconductor element 20 and another semiconductor element 20, and the solder layer 24 in one semiconductor element 20 is brought into contact with the tip of the metal protrusion 14 in another semiconductor element 20, and this step is repeated, thereby stacking a plurality of semiconductor elements 20 on the semiconductor elements 20 stacked on the substrate 10. In addition, the electrode pad may not be provided on the semiconductor element 20 (semiconductor element 20A) farthest from the substrate 10 side among the semiconductor elements stacked on the substrate 10.

[0175] Next, the solder layer 24 is melted by heating to connect the substrate 10 and the plurality of semiconductor elements 20 together, thereby manufacturing Figure 7 The semiconductor device shown has metal protrusions 14 penetrated into solder layer 24. When a resin film containing a thermosetting resin is used as resin film 30, resin film 30 is cured along with solder connection to form cured resin layers 32 between semiconductor element 20 and substrate 10 and between semiconductor elements 20.

[0176] The details of the semiconductor element, substrate, and resin film used in the method for manufacturing a semiconductor device of the second embodiment, and many conditions of the contact process, the connection process, and other processes are the same as those of the method for manufacturing a semiconductor device of the first embodiment.

[0177] In the second embodiment, the substrate 10 and the plurality of semiconductor elements 20 are connected together by heating. However, the semiconductor device may be manufactured by repeating the lamination and connection of the substrate 10 and the semiconductor elements 20 separately.

[0178] <Substrate and semiconductor element>

[0179] The substrate of the present disclosure includes an electrode pad having a metal protrusion with an acute-angled tip on the surface. The details of the substrate of the present disclosure are as described in the method for manufacturing a semiconductor device of the first embodiment.

[0180] The semiconductor element of the present disclosure includes an electrode pad having a metal protrusion with an acute-angled tip on the surface. The details of the semiconductor element of the present disclosure are as described in the semiconductor device manufacturing method of the first embodiment and the second embodiment.

[0181] All documents, patent applications, and technical standards described in this specification are incorporated herein by reference to the same extent as if each document, patent application, and technical standard was specifically and individually described as being incorporated by reference.

[0182] Explanation of symbols

[0183] 10 substrate

[0184] 11 substrate main body

[0185] 12 Electrode pad body

[0186] 14 Metal protrusions

[0187] 16 electrode pads

[0188] 20 Semiconductor components

[0189] 21. Semiconductor component body

[0190] 22 Pillar

[0191] 24 Solder layer

[0192] 26 Protruding electrode

[0193] 30 Resin film

[0194] 32 Curing resin layer

Claims

1. A method for manufacturing a semiconductor device, comprising the following steps: The step of laminating the semiconductor element on the substrate by bringing the solder layer in the semiconductor element into contact with the tip of the metal protrusion in the substrate while a resin film is interposed between the semiconductor element and the substrate, wherein: The semiconductor element includes a protruding electrode having the solder layer at the front end, and the substrate includes an electrode pad having the metal protrusion on the surface opposite to the surface of the semiconductor element having the protruding electrode; as well as A step of melting the solder layer by heating to connect the substrate and the semiconductor element.

2. The method for manufacturing a semiconductor device according to claim 1, wherein: The semiconductor element stacked on the substrate includes an electrode pad having a metal protrusion on the surface opposite to the surface having the protruding electrode. On the semiconductor element stacked on the substrate, a plurality of semiconductor elements each having a protruding electrode having a solder layer at the front end on one surface side and an electrode pad having a metal protrusion on the surface on the other surface side are stacked in a state where the resin film is interposed between one semiconductor element and another semiconductor element so that the solder layer in one semiconductor element is in contact with the front end of the metal protrusion in another semiconductor element, and this step is repeated, thereby stacking a plurality of semiconductor elements on the semiconductor element stacked on the substrate. The solder layer is melted by heating, thereby connecting the substrate and the plurality of semiconductor elements together.

3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein: The solder layer and the tip of the metal protrusion are brought into contact with each other with the resin film interposed therebetween while being heated at a temperature not higher than the melting temperature of the solder constituting the solder layer.

4. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein: The protruding electrode includes a pillar and the solder layer provided at a tip of the pillar, and a total value of an average height of the pillar and an average height of the metal protrusion is smaller than a value of an average thickness of the resin film.

5. The method for manufacturing a semiconductor device according to claim 4, wherein: The average height of the pillars is 20 μm or less.

6. The method for manufacturing a semiconductor device according to any one of claims 1 to 5, wherein: The front end of the metal protrusion is an acute angle.

7. The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein: The resin film includes a thermosetting resin.

8. The method for manufacturing a semiconductor device according to claim 7, wherein: The thermosetting resin includes at least one selected from the group consisting of epoxy resin, polyamic acid, and polyhydroxyamide.

9. The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein: The resin film includes a thermoplastic resin.

10. The method for manufacturing a semiconductor device according to claim 9, wherein: The thermoplastic resin includes at least one selected from polyimide, polyamide, polycarbonate, polyacetal, polyphenylene ether, polybutylene terephthalate, polytetrafluoroethylene, polyphenylene sulfide, polysulfone, polyethersulfone, polyarylate, polyamideimide, polyetherimide, polyetheretherketone, acrylic resin, phenoxy resin, polyester, polyurethane, polybenzoxazole and polybutadiene.

11. The method for manufacturing a semiconductor device according to any one of claims 1 to 10, wherein: The resin film contains an inorganic filler.

12. The method for manufacturing a semiconductor device according to claim 11, wherein: The content of the inorganic filler is 10% by mass to 80% by mass based on the total amount of the resin film.

13. The method for manufacturing a semiconductor device according to any one of claims 1 to 12, wherein: The resin film has a viscosity of 500 mPa·s to 4000 mPa·s at 130° C.

14. A substrate comprising an electrode pad having a metal protrusion with an acute-angled tip on its surface.

15. A semiconductor device comprising an electrode pad having a metal protrusion with an acute-angled tip on its surface.

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