Multi-zone lamp heating for chemical vapor deposition

Abstract

Embodiments disclosed herein include a lamp module for a semiconductor processing chamber. In an embodiment, a light module board includes a back plate, a first ring extending from the back plate, a second ring extending from the back plate, and a third ring extending from the back plate. In an embodiment, the lamp module further includes a plurality of first lamps between the first ring and the second ring, a plurality of second lamps between the second ring and the third ring, and a plurality of third lamps configured to emit infrared radiation propagating into the third ring.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of U.S. patent application No. 17 / 733,685, filed on April 29, 2022, the entire contents of which are incorporated herein by reference.

[0003] field

[0004] Embodiments relate to the field of semiconductor manufacturing, and in particular, to a chemical vapor deposition chamber having at least three heating zones.

[0005] Description of Related Technology

[0006] In semiconductor manufacturing processes, control of substrate temperature is critical in order to provide the necessary process uniformity across the substrate. For example, in order to provide a high degree of process uniformity in a chemical vapor deposition (CVD) process, it may be necessary to carefully control the wafer temperature. Typically, the substrate is heated by using a heating lamp. The lamp irradiates the substrate through a housing. That is, the heater is outside the chamber. In order to allow thermal energy to pass through the housing, the housing is a material that is transparent to infrared radiation. For example, the housing may comprise quartz or the like. Similarly, a lamp and housing may also be provided on the back side surface of the chamber to heat the back side surface of the substrate. The substrate may be rotated to provide improved temperature uniformity.

[0007] In existing CVD tools, reflectors are used to focus infrared radiation onto the surface of a substrate. In some cases, the reflector may include a first zone and a second zone. The first zone focuses on an outer region of the substrate, and the second zone focuses on a central region of the substrate. While two zones are beneficial to some extent, it may be desirable to provide finer control of the substrate temperature than is possible using a two zone reflector.

[0008] Overview

[0009] Embodiments disclosed herein include a light module for a semiconductor processing chamber. In one embodiment, the light module plate includes a back plate, a first ring extending from the back plate, a second ring extending from the back plate, and a third ring extending from the back plate. In one embodiment, the light module further includes a plurality of first lamps between the first ring and the second ring, a plurality of second lamps between the second ring and the third ring, and a plurality of third lamps configured to emit infrared radiation propagating into the third ring.

[0010] Embodiments disclosed herein further include a semiconductor processing tool. In one embodiment, the semiconductor processing tool includes a pedestal for supporting a substrate, a first housing above the pedestal, a second housing below the pedestal, and a first lamp module above the first housing, wherein the first lamp module includes three or more heating zones, and a second lamp module below the second housing, wherein the second lamp module includes multiple heating zones.

[0011] Embodiments may further include a semiconductor processing tool. In one embodiment, the semiconductor processing tool includes a pedestal for supporting a substrate, a first housing above the pedestal, a second housing below the pedestal, and a first lamp module above the first housing. In one embodiment, the first lamp module includes a backing plate, a first ring extending from the backing plate, a second ring extending from the backing plate, a third ring extending from the backing plate, a plurality of first lamps between the first ring and the second ring, a plurality of second lamps between the second ring and the third ring, and a plurality of third lamps configured to emit infrared radiation that propagates into the third ring. In one embodiment, the semiconductor processing tool further includes a second lamp module below the second housing, wherein the second lamp module includes a plurality of heating zones.

[0012] BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1A is a cross-sectional view of a semiconductor processing tool having a top light with three zones according to an embodiment.

[0014] Figure 1B is a cross-sectional view of a semiconductor processing tool having three top zones and three bottom zones according to an embodiment.

[0015] Figure 2 is a perspective view of a lamp module including three lamp zones according to an embodiment.

[0016] Figure 3A is a plan view of a lamp module including three lamp zones according to an embodiment.

[0017] Figure 3B According to one embodiment Figure 3A 0026] A plan view of a lamp module in FIG. 1 further showing the positions of lamps for a third zone of the lamp module.

[0018] Figure 3C According to one embodiment Figure 3B Cross-sectional view of the lamp module along line CC'.

[0019] Figure 4A is a graph of the intensity of a lamp area across a radius of a substrate according to an embodiment.

[0020] Figure 4B is a graph of the intensity of the lamp area of ​​the top lamp and the bottom lamp across the radius of the substrate according to one embodiment.

[0021] Figure 4C is a graph of the intensity of light zones for three top light zones and three bottom light zones according to an embodiment.

[0022] Figure 5A block diagram of an exemplary computer system that may be used in conjunction with a processing tool is shown according to one embodiment.

[0023] Specific description

[0024] The system described herein includes a chemical vapor deposition chamber having at least three heating zones. In the following description, many specific details are set forth in order to provide a thorough understanding of the embodiments. It will be apparent to those skilled in the art that the embodiments may be implemented without these specific details. In other cases, well-known aspects are not described in detail in order to avoid unnecessarily obscuring the embodiments. In addition, it should be understood that the various embodiments shown in the accompanying drawings are exemplary representations and are not necessarily drawn to scale.

[0025] As described above, current lamp module architectures for semiconductor manufacturing tools are typically limited to two lamp zones. While two lamp zones provide some degree of control over temperature uniformity, it is desirable to provide even greater control over substrate temperature. Therefore, embodiments disclosed herein include semiconductor manufacturing tools that include three or more lamp zones. For example, a lamp module may be used that focuses infrared light from multiple lamps onto three regions of an underlying substrate. For example, the infrared light may be focused on an edge region, a middle region, and a center region of the substrate. To provide even greater temperature uniformity, the substrate may be on a rotatable base.

[0026] In other embodiments, a multi-zone light module may also be provided on the back side of the substrate. In some embodiments, a backside reflector may focus infrared light at the interface between the zones of the front side light module. For example, the backside zone may be concentrated at the interface between the first zone and the second zone of the front side light module. In such an embodiment, improved thermal uniformity across the surface of the substrate may be provided.

[0027] In one embodiment, a multi-zone lamp module may include a plurality of rings extending upward from a base plate. As used herein, "extend up," "extends up," "extend from," or "extends from" may refer to a first structural body having a plane that intersects a plane of a second structural body. In some cases, the planes may be substantially orthogonal to each other, although the two planes need not be orthogonal in all cases. The first ring may be an outer ring. The second ring may be within the first ring, and the third ring may be within the second ring. Lamps may be provided between the rings. The rings and backing plate may be configured to focus heat energy from the lamps to specific areas of the substrate (e.g., an outer area, a middle area, and a center area).

[0028] Referring now to FIG. 1 , a cross-sectional view of a semiconductor manufacturing tool 100 is shown according to one embodiment. In one embodiment, the semiconductor manufacturing tool 100 (referred to as tool 100 ) may include any type of semiconductor manufacturing tool that may require precise substrate temperature control. In one embodiment, the tool 100 may be a chemical vapor deposition (CVD) tool. Other tools 100 that may be used are atomic layer deposition (ALD) tools, rapid thermal processing (RTP) tools, or the like. In the illustrated embodiment, a tool 100 without plasma capability is shown. However, it should be understood that the tool 100 may also include the ability to use plasma in order to achieve various processing schemes.

[0029] In one embodiment, the tool 100 may include a chamber body 120. The chamber body 120 may include any suitable material, such as stainless steel or the like. In one embodiment, a coating (not shown) may be provided on the inner surface of the chamber body 120. For example, the coating may be a chamber conditioning layer or a protective layer. In one embodiment, a gas 121 may enter the tool 100 through a first portion of the chamber body 120, and a gas 122 may exit the tool through a second portion of the chamber body 120. Although the gases 121 and 122 are shown as entering and exiting through the chamber body 120, it should be understood that the gases may enter or exit the chamber through any portion of the tool 100, depending on the type of tool 100 being used.

[0030] In one embodiment, a substrate support 115 and a pedestal 117 are provided in the tool 100. The substrate support 115 and the pedestal 117 are configured to hold and / or secure the substrate 110. For example, the substrate 110 may be a semiconductor substrate, such as a silicon wafer. The substrate 110 may have any suitable form factor. For example, the diameter of the substrate 110 may be 300 mm, 450 mm, or any standard wafer form factor. In addition, other substrates 110 may be used in the tool 100. For example, a glass substrate, a ceramic substrate, or the like may also be used in some embodiments. In one embodiment, the substrate support 115 and the pedestal 117 may be configured to rotate. The rotation allows for improved temperature uniformity across the substrate 110.

[0031] The pedestal 117 may include any type of chuck architecture for securing the substrate 110. In some embodiments, the pedestal 117 may include an electrostatic chuck (ESC) architecture. In such embodiments, the substrate 110 is secured to the pedestal 117 by electrostatic forces. Other embodiments may include a vacuum clamping architecture for the pedestal 117. In one embodiment, the pedestal 117 and the substrate support 115 may include a quartz material or another material that is at least substantially transparent to infrared radiation. Thus, the backside surface of the substrate 110 may also be heated in some embodiments.

[0032] In one embodiment, the tool 100 may include a top housing 125. The top housing 125 may sometimes be referred to as a lid or chamber lid. The top housing 125 may be formed of a material that is at least substantially transparent to infrared radiation. For example, the top housing 125 may include quartz or the like. In the illustrated embodiment, the top housing 125 has a curved surface and is dome-shaped. In other embodiments, the top housing 125 may be substantially flat. That is, in some embodiments, the top housing 125 need not have a dome-shaped architecture.

[0033] In one embodiment, the tool 100 may further include a bottom housing 127. The bottom housing 127 may cover the bottom surface of the tool 100. The bottom housing 127 may include a material that is at least substantially transparent to infrared radiation. Thus, the lamps on the bottom side of the tool 100 may be used to heat the bottom surface of the substrate 110. In one embodiment, the bottom housing 127 may be coupled to the substrate support 115. More specifically, the substrate support 115 may pass through the bottom housing 127. The bottom housing 127 is coupled to the substrate support 115 in a configuration that allows the substrate support 115 to rotate freely.

[0034] In one embodiment, a plurality of lamps 130 may be provided outside the interior space of the tool 100. The interior space of the tool may refer to the space defined by the top housing 125, the chamber body 120, and the bottom housing 127. That is, the lamps 130 are not provided within the interior space of the tool 100 where substrate processing is performed. In the illustrated embodiment, three lamps 130A-130C are provided on the top surface of the top housing 125. Each of the three lamps 130A-130C represents a different lamp zone. That is, although a single lamp is shown for each zone, it should be understood that a plurality of lamps 130 may be included in each zone.

[0035] In one embodiment, the first lamp 130A can be focused on the outer area of ​​the substrate 110. The second lamp 130B can be focused on the middle area of ​​the substrate 110, and the third lamp 130C can be focused on the center area of ​​the substrate 110. In the illustrated embodiment, the line from the lamp 130 to the substrate 110 shows the perfect focus of the infrared light to a specific area of ​​the substrate. However, it should be understood that the infrared light from the lamps 130 can overlap each other to a certain extent, which will be described in more detail below.

[0036] In the illustrated embodiment, the lamps 130 are shown as focusing infrared radiation on themselves. That is, for simplicity, the lamp module structure is omitted. It should be understood that the lamp module structure can surround each of the lamps 130. The lamp module structure will be described in more detail below.

[0037] In the illustrated embodiment, three front side light zones are shown. However, it should be understood that more than three light zones may be included in other embodiments. For example, the light module structure may include four or more zones to provide even more enhanced control of the temperature across the surface of the substrate 110.

[0038] In addition to front side infrared exposure, embodiments may also include back side heating. For example, a fourth lamp 130D and a fifth lamp 130E may be provided below the bottom housing 127. In the case of two back side lamps 130, the fourth lamp 130D may be focused on the outer area of ​​the substrate 110, and the fifth lamp 130E may be focused on the central area of ​​the substrate 110. Similar to the front side lamps 130A-130C, the lamp module structure for the back side lamps 130D and 130E is omitted for simplicity.

[0039] In one embodiment, the illumination patterns of the front side lights 130A-130C may overlap with the illumination patterns of the back side lights 130D and 130E. In other embodiments, the back side lights 130D and 130E may be focused to overlap with the interface between the regions on the substrate. For example, the back side lights 130D may be focused at the interface between the outer region of the substrate 110 and the middle region of the substrate 110, and the back side lights 130E may be focused at the interface between the middle region of the substrate 110 and the center region of the substrate 110.

[0040] Reference now Figure 1B , according to additional embodiments, a cross-sectional view of tool 100 is shown. In one embodiment, Figure 1B The tool 100 in may be substantially similar to Figure 1A The tool 100 in the embodiment shown in , except for the back side lights 130. Instead of having a set of two light zones (i.e., a central area on the substrate 110 and an outer area on the substrate 110). The back side lights 130 may include three or more zones. For example, the first light 130D may be focused on the outer area of ​​the substrate 110, the second light 130E may be focused on the middle area of ​​the substrate 110, and the third light 130F may be focused on the central area of ​​the substrate 110. In the embodiment shown, the focus of the back side lights 130 substantially overlaps with the focus of the front side lights 130. In other embodiments, the back side lights 130 may be focused on the interface between the areas on the top side of the substrate 110.

[0041] Reference now Figure 2 , according to one embodiment, a perspective view of a lamp module 250 is shown. In one embodiment, the lamp module 250 can be used to focus light from multiple lamps onto different areas of a substrate ( Figure 2100). That is, the light module 250 may include a reflector and one or more lamps. A light module may generally refer to a combination of a reflector element and a lamp element. For example, a light module may include one or more reflector zones and one or more lamps provided within the one or more reflector zones. As used herein, the reflector zones may be provided between rings of reflectors, as will be described in more detail below. The light module 250 may be used on the front side of the tool 100 or on the back side of the tool 100. That is, light from the light module 250 may pass through the top housing 125 or the bottom housing 127, similar to the embodiments described in more detail above.

[0042] In one embodiment, the lamp module 250 may include a back plate 255. A plurality of rings may extend upward from the back plate 255. A combination of the contour of the back plate 255 and the shape of the rings may be used to focus the infrared light at a specific location on the substrate 110. In one embodiment, the lamp module 250 may include a material having a high reflectivity for infrared radiation. For example, the reflectivity of the lamp module 250 may be about 90% or greater, about 95% or greater, or about 98% or greater. In one embodiment, the lamp module 250 may include a thin coating having a high infrared reflectivity. For example, a gold coating may be provided over the surface of the lamp module 250.

[0043] In one embodiment, the first ring 251 may extend upward from the back plate 255. The outer diameter of the first ring 251 may be substantially equal to the diameter of the back plate 255. The second ring 252 may be provided within the inner diameter of the first ring 251. As shown, the thickness of the second ring 252 may be less than the thickness of the first ring 251. However, in other embodiments, the thickness of the first ring 251 may be substantially equal to the thickness of the second ring 252.

[0044] In one embodiment, the first lamp area is provided between the first ring 251 and the second ring 252. For example, a plurality of first lamps 230A may be provided between the first ring 251 and the second ring 252. The first lamps 230A may be provided above the backing plate 255 below. In some embodiments, the area of ​​the backing plate 255 between the first ring 251 and the second ring 252 may be contoured to focus the infrared radiation to a desired location on the substrate 110 ( Figure 2 In one embodiment, ten or more first lamps 2301 may be provided between the first ring 251 and the second ring 252. In a specific embodiment, sixteen first lamps 230A may be provided between the first ring 251 and the second ring 252.

[0045] In one embodiment, the third ring 253 may be provided within the inner diameter of the second ring 252. The thickness of the third ring 253 may be substantially equal to the thickness of the second ring 252. In other embodiments, the third ring 253 may have a different thickness than the second ring 252. In one embodiment, the heights of the first ring 251, the second ring 252, and the third ring 253 may be substantially the same. In other embodiments, one or more of the first ring 251, the second ring 252, and the third ring 253 may have different heights.

[0046] In one embodiment, the second lamp zone may be provided between the second ring 252 and the third ring 253. For example, a plurality of second lamps 2302 may be provided between the second ring 252 and the third ring 253. In some embodiments, the second lamp zone may include four or more second lamps 230B. In a specific embodiment, the second lamp zone may include eight second lamps 230B.

[0047] In one embodiment, the second lamp 230B is provided between the covers 257. The cover 257 may be a portion of the lamp module 250 that covers the top surface of the third lamp (between the top and bottom of the lamp). Figure 2 The infrared light from the third lamp can propagate laterally into the region of the lamp module 250 within the third ring 253. The third ring 253 then directs the infrared light to the central region of the underlying substrate 110 ( Figure 2 That is, in some embodiments, there may not be any lights physically located within the inner diameter of the third ring 253.

[0048] Reference now Figure 3A , a plan view of a light module 350 is shown, according to one embodiment. In one embodiment, the light module 350 may have a surface with high reflectivity of infrared radiation. For example, the light module 350 may be gold plated or the like. In one embodiment, the light module 350 includes a set of three rings extending upward from a circular back plate. For example, a first ring 351 is located at the outer edge of the back plate 355, a second ring 352 is provided within the inner diameter of the first ring 351, and a third ring 352 is provided within the inner diameter of the second ring 352. The rings 351, 352, and 353 may be substantially similar to the rings 251, 252, and 253 described in more detail above.

[0049] In one embodiment, a plurality of first lamps 330A may be provided above the back plate 355A between the first ring 351 and the second ring 352. The orientation of the first lamps 3301 may be determined by their positions around the back plate 355A. That is, the rotational orientation of each of the first lamps 330A may be different from each other. In a particular embodiment, the centerline of each of the first lamps 330A may not be orthogonal to the first ring 351 and / or the second ring 352. In one embodiment, the back plate 355A may also be contoured to improve the focusing of the reflected infrared radiation. For example, in some embodiments, the back plate 355A may be curved. In the illustrated embodiment, a group of fourteen first lamps 330A are shown. However, it should be understood that any number of first lamps 330A may be included according to various embodiments.

[0050] In one embodiment, a plurality of second lamps 330B may be provided between the second ring 352 and the third ring 353. The second lamps 330B may be oriented such that the centerline of each second lamp 330B is orthogonal to both the third ring 353 and the second ring 352. In one embodiment, the second lamps 330B may be provided above the back plate 355B. The back plate 355B may be contoured to improve infrared radiation to the underlying substrate 110 ( Figure 3A In one embodiment, eight second lamps 330B are shown. However, in other embodiments, fewer or more second lamps 330B may be used.

[0051] In one embodiment, the second lamp 330B can be isolated from an area of ​​the back plate 355B adjacent to the cover 357. For example, a pair of two covers 357 can separate the second lamp 330B on the left side of the lamp module 350 from the second lamp 330B on the right side of the lamp module 350. The cover 357 can cover the lamp (not shown) that directs light to the center of the third ring 353, which will be described in more detail below.

[0052] In one embodiment, a window 360 may be provided through the lamp module 350. In one embodiment, the length of the window 360 may be greater than the width of the window 360. The elongated shape allows a sensor (not shown) to be scanned linearly through the lamp module. In conjunction with the rotating substrate 110, the sensor can provide a spatial map of sensed values. For example, the sensor can be a temperature sensor, such as a pyrometer. This allows the accurate temperature of the entire substrate to be determined using the window 360. In one embodiment, the window 360 may intersect with one or more of the rings 351, 352, and 353. In the embodiment shown, the window 360 intersects with the second ring 352 and the third ring 353. In other embodiments, the first ring 351 may also intersect with the window 360, or partially intersect with the window 360.

[0053] Reference now Figure 3B, according to additional embodiments, a plan view of a light module 350 is shown. In one embodiment, Figure 3B The lamp module 350 in Figure 3A 350, except that a third lamp 330C is added. As shown, the third lamp 330C can be located between the second ring 352 and the third ring 353. As shown in dashed lines, the third lamp 330C can be provided under the cover 357. In one embodiment, a pair of third lamps 330C are provided under each of the covers 357. However, it should be understood that any number of lamps can be provided under each of the covers 357. As shown on the right side of the lamp module 350, a window 360 can pass between the pair of third lamps 330C.

[0054] As indicated by the arrows emanating from the third lamp 330C, infrared radiation can be directed from below the cover 357 into the area within the third ring 353. That is, an opening can be provided through the third ring 353 to accommodate the propagation of infrared radiation from the third lamp 330C. In one embodiment, the back plate 355C can be contoured to focus the infrared radiation onto a desired area of ​​the underlying substrate 110. In some embodiments, the infrared radiation from the first lamp 330A can be focused on an outer area of ​​the substrate 110, the infrared radiation from the second lamp 330B can be focused on a middle area of ​​the substrate 110, and the infrared radiation from the third lamp 330C can be focused on a central area of ​​the substrate 110.

[0055] Reference now Figure 3C According to one embodiment, it is shown Figure 3B FIG. 3 is a cross-sectional view of the lamp module 350 along the line C-C' in FIG. In addition to the lamp module 350, a base 317 and a base plate 310 are shown below the lamp module 350. In one embodiment, a housing (not shown) may be provided between the lamp module 350 and the base plate 310. As shown by the curved arrows around the base 317, the base 317 and the base plate 310 may be rotated.

[0056] In one embodiment, the light module 350 may include a back plate 355. As shown, a plurality of rings extend upwardly from the back plate 355. A first ring 351 is at the periphery of the back plate 355. A second ring 352 and a third ring 353 are also provided in the light module 350. In the illustrated embodiment, only the left side of the second ring 352 and the third ring 353 are shown because the window 360 passes through the opposite ends of the rings 352 and 353. In one embodiment, a cover 357 is provided over the back plate 355 between the second ring 352 and the third ring 353. A first light 330A is shown in the light module 350. It should be understood that the second light 330B and the third light 330C are provided in Figure 3C outside the plane shown.

[0057] In one embodiment, sensor 361 may be configured to be inserted through window 360. Sensor 361 may be a temperature sensor, such as a pyrometer. In one embodiment, sensor 361 is configured to scan across rotating substrate 310, as indicated by a double-headed arrow near sensor 361. By rotating substrate 310 and linearly scanning sensor 361, a map of the entire surface of substrate 310 may be provided. Temperature information from sensor 361 may be used as a feedback signal to control the power of first lamp 330A, second lamp 330B, and third lamp 330C.

[0058] exist Figure 3A-3C In the illustrated embodiment, the lamp module 350 is configured as a top-side lamp module. That is, the infrared radiation from the lamp 330 will pass through the top housing 125 of the tool 100. Of course, it should be understood that a similar lamp module 350 can be used to expose the bottom surface of the substrate to infrared radiation. That is, the lamp module 350 can be configured to emit infrared radiation through the bottom housing 127 of the tool 100.

[0059] Reference now Figure 4A , according to one embodiment, a graph of the intensity of a lamp across a radius of a substrate is shown. As shown, there are three peaks 440A–440C. Each peak may correspond to a region of a lamp module. For example, peak 440A may be at an outer region of the substrate, peak 440B may be at a middle region of the substrate, and peak 440C may be at a center region of the substrate. In one embodiment, peaks 440A-440C may partially overlap each other. The overlapping nature of peaks 440A–440C may result in a smoother temperature profile. However, it should be understood that a completely flat profile across the radius of a substrate may not be achieved using only a top lamp module.

[0060] Thus, embodiments disclosed herein may include a bottom light module that also provides infrared radiation from the back side to the substrate. In certain embodiments, the bottom light module may emit infrared radiation that is complementary to the top peaks 440A-440C. Figure 4B An example of such complementary peaks is shown in .

[0061] exist Figure 4B , a fourth peak 440D and a fifth peak 440E are shown. The fourth peak 440D may be provided between the first peak 440A and the second peak 440B, and the fifth peak 440E may be provided between the second peak 440B and the third peak 440C. Therefore, the temperature drop at the interface between the regions can be accommodated by backside illumination.

[0062] exist Figure 4C, a similar intensity graph across a radius of a substrate is shown according to an additional embodiment. Instead of a backside light module having two zones, three zones are provided in the backside light module. In such an embodiment, the fourth peak 440D may be outside the first peak 440A, the fifth peak 440E may be between the first peak 440A and the second peak 440B, and the sixth peak 440F may be between the second peak 440B and the third peak 440C.

[0063] The computer system 500 may include a computer program product or software 522, a non-transitory machine-readable medium having instructions stored thereon, which can be used to program the computer system 500 (or other electronic device) to perform processing according to the embodiment. Machine-readable media include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, machine-readable (e.g., computer-readable) media include machine-readable (e.g., computer) storage media (e.g., read-only memory ("ROM"), random access memory ("RAM"), magnetic disk storage media, optical storage media, flash memory devices, etc.), machine-readable (e.g., computer) transmission media (electrical, optical, acoustic or other forms of propagated signals (e.g., infrared signals, digital signals, etc.)), etc.

[0064] In one embodiment, the computer system 500 includes a system processor 502, a main memory 504 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM), such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM)), etc.), a static memory 506 (e.g., flash memory, static random access memory (SRAM), etc.), and an auxiliary memory 518 (e.g., a data storage device), which communicate with each other via a bus 530.

[0065] The system processor 502 represents one or more general-purpose processing devices, such as a microsystem processor, a central processing unit, or the like. More specifically, the system processor may be a complex instruction set computing (CISC) microsystem processor, a reduced instruction set computing (RISC) microsystem processor, a very long instruction word (VLIW) microsystem processor, a system processor implementing other instruction sets, or a system processor implementing a combination of instruction sets. The system processor 502 may also be one or more special-purpose processing devices, such as an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal system processor (DSP), a network system processor, or the like. The system processor 502 is configured to execute processing logic 526 to perform the operations described herein.

[0066] The computer system 500 may further include a system network interface device 508 for communicating with other devices or machines. The computer system 500 may also include a video display unit 510 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 512 (e.g., a keyboard), a cursor control device 514 (e.g., a mouse), and a signal generating device 516 (e.g., a speaker).

[0067] The secondary memory 518 may include a machine-accessible storage medium 532 (or more specifically a computer-readable storage medium) on which is stored one or more sets of instructions (e.g., software 522) that implement any one or more of the methods or functions described herein. The software 522 may also reside, in whole or in part, within the main memory 504 and / or within the system processor 502 during its execution by the computer system 500, the main memory 504 and the system processor 502 also constituting machine-readable storage media. The software 522 may further be transmitted or received over the network 520 via the system network interface device 508. In one embodiment, the network interface device 508 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.

[0068] Although the machine-accessible storage medium 532 is shown as a single medium in the exemplary embodiment, the term "machine-readable storage medium" should be considered to include a single medium or multiple media (e.g., a centralized or distributed database and / or associated caches and servers) that store one or more sets of instructions. The term "machine-readable storage medium" should also be considered to include any medium that can store or encode a set of instructions for machine execution and cause the machine to perform any one or more of the methods. Therefore, the term "machine-readable storage medium" should be understood to include (but not limited to) solid-state memory, optical and magnetic media.

[0069] In the foregoing specification, specific exemplary embodiments have been described. It will be apparent that various modifications may be made thereto without departing from the scope of the appended claims. Accordingly, the specification and drawings are to be regarded in an illustrative rather than a restrictive sense.

Claims

1. A lamp module for a semiconductor processing chamber, comprising: Back panel; a first ring extending from the back plate; a second ring extending from the back plate; a third ring extending from the back plate; a plurality of first lights between the first ring and the second ring; a plurality of second lights between the second ring and the third ring; and A plurality of third lamps are configured to emit infrared radiation that propagates into the third ring. 2 . The light module of claim 1 , wherein the plurality of first lamps are oriented to illuminate an outer area of ​​a substrate beneath the light module. 3 . The light module of claim 1 , wherein the plurality of second lamps are oriented to illuminate a middle area of ​​a substrate below the light module. 4 . The light module of claim 1 , wherein the plurality of third lamps are oriented to illuminate a central area of ​​a substrate below the light module.

5. The lamp module of claim 1, wherein the lamp module is configured for use in a chemical vapor deposition (CVD) chamber. 6 . The lamp module of claim 1 , wherein the plurality of first lamps, the plurality of second lamps, and the plurality of third lamps are provided on the back plate.

7. The light module of claim 6, wherein the back plate is configured to reflect light from the plurality of first lamps, the plurality of second lamps, and the plurality of third lamps away from the light module.

8. The lamp module of claim 1, further comprising: A window is formed through the back panel.

9. The light module of claim 8, wherein the window passes through at least one of the second ring and the third ring.

10. The lamp module of claim 8, wherein a pyrometer is positioned in the window, and wherein the pyrometer is configured to scan laterally across the window.

11. A semiconductor processing tool comprising: A base having a first surface and a second surface for supporting a substrate; a first housing facing the first surface of the base; a second housing facing the second surface of the base; a first light module outside the first housing and the second housing, wherein the first light module comprises three or more heating zones; and A second light module is outside the first housing and the second housing and on an opposite side of the first light module, wherein the second light module includes a plurality of heating zones.

12. The semiconductor processing tool of claim 11, wherein the three or more heating zones comprise: a first zone for heating an outer region of a substrate placed on the susceptor; a second zone for heating a middle region of the substrate placed on the susceptor; and The third zone is used to heat the central area of ​​the substrate placed on the susceptor.

13. The semiconductor processing tool of claim 12, wherein the plurality of heating zones on the second lamp module are oriented to heat a back side of the substrate placed on the pedestal.

14. The semiconductor processing tool of claim 13, wherein the plurality of heating zones on the second lamp module comprises: a fourth heating zone configured to heat the substrate at an interface between the first zone and the second zone; and A fifth heating zone is configured to heat the substrate at an interface between the second zone and the third zone.

15. The semiconductor processing tool of claim 11, wherein the first enclosure and the second enclosure comprise quartz.

16. The semiconductor processing tool of claim 11, wherein the pedestal is configured to rotate.

17. The semiconductor processing tool of claim 11, wherein the semiconductor processing tool is a chemical vapor deposition (CVD) processing tool.

18. A lamp module for a semiconductor processing chamber, comprising: Back panel; a plurality of light zones separated from each other by a plurality of rings extending from the back panel; and A plurality of lamps are positioned within each of the plurality of lamp zones.

19. The lamp module of claim 18, wherein a plurality of first lamps are oriented to illuminate an outer region of a substrate beneath the lamp module, wherein a plurality of second lamps are oriented to illuminate a middle region of the substrate beneath the lamp module, and wherein a plurality of third lamps are oriented to illuminate a central region of the substrate beneath the lamp module.

20. The lamp module of claim 18, wherein the lamp module is configured for use in a chemical vapor deposition (CVD) processing tool.

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