Gas mixing device

Abstract

A gas mixing device may include a main pipe and a gas delivery device connected to the main pipe. The gas delivery device may include a distribution device surrounding the main pipe, a supply pipe connected to the distribution device and defining a supply path, and a plurality of connection pipes connecting the distribution device to the main pipe. The dispensing device may include an inner cylinder and an outer cylinder sequentially disposed around the main duct and sequentially spaced radially from the main duct. A distribution space may be defined between the inner cylinder and the outer cylinder, and a supply conduit may be coupled to the outer cylinder such that a supply path is connected to the distribution space. The connecting conduits may be spaced apart from each other in a circumferential direction.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0081268 filed in the Korean Intellectual Property Office on June 23, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to a gas mixing device, a substrate processing system including the gas mixing device, and a substrate processing method using the substrate processing system, and in particular, to a gas mixing device configured to mix two or more gases, a substrate processing system including the gas mixing device, and a substrate processing method using the substrate processing system. Background Art

[0004] The process of manufacturing a semiconductor device includes various processes. For example, a semiconductor device can be manufactured by a photolithography process, an etching process, a deposition process, and an electroplating process. Gases can be used to manufacture semiconductor devices in the process. For example, in an atomic layer deposition (ALD) process, a gas can be supplied to an area on a substrate. Typically, two or more gases can be used for each process.

[0005] Two or more gases may be mixed with each other and then may be supplied to a region on a substrate. Summary of the invention

[0006] Embodiments of the inventive concept provide a gas mixing apparatus configured to effectively mix two or more gases, a substrate processing system including the gas mixing apparatus, and a substrate processing method using the substrate processing system.

[0007] Embodiments of the inventive concept provide a gas mixing device configured to prevent two or more gases from reacting with each other therein and to prevent particles from being formed, a substrate processing system including the same, and a substrate processing method using the same.

[0008] Embodiments of the inventive concept provide a gas mixing apparatus configured to uniformly supply a gas, a substrate processing system including the gas mixing apparatus, and a substrate processing method using the substrate processing system.

[0009] Embodiments of the inventive concept provide a gas mixing device in which conductance of a conductive path or a flow path is controlled to achieve smooth gas flow, a substrate processing system including the same, and a substrate processing method using the same.

[0010] According to some embodiments of the present inventive concept, a gas mixing device may include a main pipeline defining a main path extending in a first direction and a first gas transmission device connected to the main pipeline. The first gas transmission device may include a first distribution device surrounding the main pipeline, a first supply pipeline connected to the first distribution device and defining a first supply path, and a plurality of first connecting pipelines connecting the first distribution device to the main pipeline. The first distribution device may include a first inner cylinder surrounding the main pipeline and radially spaced from the main pipeline, and a first outer cylinder surrounding the first inner cylinder and radially spaced from the first inner cylinder. A first distribution space may be defined between the first inner cylinder and the first outer cylinder, and the first supply pipeline may be coupled to the first outer cylinder so that the first supply path is connected to the first distribution space. The first connecting pipelines may be spaced apart from each other in the circumferential direction.

[0011] According to some other embodiments of the present inventive concept, a gas mixing device may include a main pipeline extending in a vertical direction and a first gas transmission device connected to the main pipeline. The first gas transmission device may include a first distribution device surrounding the main pipeline, a first supply pipeline connected to the outer side surface of the first distribution device and defining a first supply path, and a plurality of first connecting pipelines connecting the first distribution device to the main pipeline. The first distribution device may include a first inner cylinder surrounding the main pipeline and a first outer cylinder surrounding the first inner cylinder and spaced apart from the first inner cylinder. A first distribution space may be defined between the first inner cylinder and the first outer cylinder. A first height of the first distribution space may be at least three times the first diameter of the first supply path.

[0012] According to some other embodiments of the present inventive concept, a substrate processing system may include a substrate processing device and a gas supply system connected to the substrate processing device. The gas supply system may include a first gas supply device, a second gas supply device and a gas mixing device, the gas mixing device being configured to mix the first gas supplied from the first gas supply device and the second gas supplied from the second gas supply device, respectively, and supply the mixed gas to the substrate processing device. The gas mixing device may include a main pipeline connecting the first gas supply device to the substrate processing device and a first gas transmission device connected to the main pipeline. The first gas transmission device may include a first distribution device surrounding the main pipeline, a first supply pipeline connecting the second gas supply device to the first distribution device, and a plurality of first connecting pipelines connecting the first distribution device to the main pipeline. The first distribution device may include a first inner cylinder surrounding the main pipeline and a first outer cylinder surrounding the first inner cylinder and spaced apart from the first inner cylinder in the radial direction. The first connecting pipelines may be spaced apart from each other in the circumferential direction.

[0013] According to some other embodiments of the present inventive concept, a substrate processing method may include placing a substrate in a substrate processing device and supplying gas to the substrate processing device. Supplying gas to the substrate processing device may include supplying gas in a first mode. Supplying gas in the first mode may include supplying a first gas from a first gas supply device, supplying a second gas from a second gas supply device, mixing the gases in a gas mixing device, and supplying the mixed gas to a space on the substrate. The gas mixing device may include a main pipeline connecting the first gas supply device to the substrate processing device and a first gas transmission device connected to the main pipeline. The first gas transmission device may include a first distribution device surrounding the main pipeline, a first supply pipeline connecting the second gas supply device to the first distribution device, and a plurality of first connecting pipelines connecting the first distribution device to the main pipeline. The first distribution device may include a first inner cylinder surrounding the main pipeline and a first outer cylinder surrounding the first inner cylinder and radially spaced apart from the first inner cylinder. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a schematic diagram illustrating a substrate processing system according to some embodiments of the inventive concept.

[0015] Figure 2 is a perspective view illustrating a gas mixing device according to some embodiments of the inventive concept.

[0016] Figure 3 is a perspective view illustrating a gas mixing device according to some embodiments of the inventive concept.

[0017] Figure 4 is a cross-sectional view illustrating a gas mixing device according to some embodiments of the inventive concept.

[0018] Figure 5 is a cross-sectional view illustrating a gas mixing device according to some embodiments of the inventive concept.

[0019] Figure 6 is a plan view illustrating a gas mixing device according to some embodiments of the inventive concept.

[0020] Figure 7 is a cross-sectional view illustrating a gas mixing device according to some embodiments of the inventive concept.

[0021] Figure 8 is a flowchart illustrating a substrate processing method according to some embodiments of the inventive concept.

[0022] Figures 9 to 15 It shows that according to Figure 8 Schematic diagram of a flow chart of a substrate processing method.

[0023] Fig.16is a perspective view illustrating a gas mixing device according to some embodiments of the inventive concept.

[0024] Fig.17 is a perspective view illustrating a gas mixing device according to some embodiments of the inventive concept.

[0025] Fig.18 is a cross-sectional view illustrating a gas mixing device according to some embodiments of the inventive concept. DETAILED DESCRIPTION

[0026] Example embodiments of the inventive concept will now be described more fully with reference to the accompanying drawings, in which example embodiments are shown. Like reference numerals in the drawings represent like elements, and thus, repeated descriptions thereof may be omitted for the sake of brevity.

[0027] Figure 1 is a schematic diagram illustrating a substrate processing system according to some embodiments of the inventive concept.

[0028] Reference Figure 1 , a substrate processing system PS may be provided. The substrate processing system PS may be configured to process a substrate. In the present specification, the term "substrate" may refer to a silicon wafer, but the inventive concept is not limited to this example. In some embodiments, the substrate processing system PS may be configured to process one substrate at a time. For example, the substrate processing system PS may be configured to perform a deposition process on a substrate. More specifically, the substrate processing system PS may be configured to perform an atomic layer deposition (ALD) process on a substrate. However, the inventive concept is not limited to this example, and the substrate processing system PS may be configured to perform different processes on the substrate. In some embodiments, the substrate processing system PS may include a chamber in which a plurality of substrates are processed simultaneously. However, for the sake of brevity, the following description will refer to an example in which the substrate processing system PS is a single wafer type system. The substrate processing system PS may include a substrate processing device or substrate processing apparatus SP, a vacuum pump VP, and a gas supply unit or gas supply system GS.

[0029] The substrate processing apparatus SP may include a processing chamber 5 , a chuck 9 , and a shower head 7 .

[0030] The processing chamber 5 may provide a processing space 5h. Processing of the substrate may be performed in the processing space 5h. During processing, the processing space 5h may be maintained in a substantially vacuum state. To this end, the processing space 5h may be connected to a vacuum pump VP. The processing space 5h may also provide or include an injection hole 5i and an exhaust hole 5e. The processing space 5h may be connected to a gas supply GS through the injection hole 5i. The processing space 5h may be connected to a vacuum pump VP through the exhaust hole 5e.

[0031] The chuck 9 may be placed in the processing space 5h. The chuck 9 may be configured to support and / or fasten the substrate. To this end, the chuck 9 may include an electrostatic chuck (ESC). However, the inventive concept is not limited to this example, and in some embodiments, the chuck 9 may include a vacuum chuck and / or a fixture. The substrate loaded on the chuck 9 may be processed. The showerhead 7 may be spaced apart from the chuck 9 in an upward direction.

[0032] The showerhead 7 may be configured to have a plurality of injection holes. Due to the showerhead 7, the process gas may be uniformly distributed on the chuck 9. More specifically, the process gas supplied in the showerhead 7 or in the space on the showerhead 7 may be uniformly distributed on the chuck 9 through the injection holes of the showerhead 7. To this end, the space on the showerhead 7 may be connected to the gas supply GS. More specifically, the space on the showerhead 7 may be connected to the main pipeline 31 (see, for example, Figure 4 ).

[0033] A vacuum pump VP may be connected to the process chamber 5. The internal pressure of the process space 5h may be reduced to a substantially vacuum level by the vacuum pump VP.

[0034] The gas supply part GS may be connected to the substrate processing device SP. The gas supply part GS may supply a processing gas to the substrate processing device SP. In some embodiments, the gas supply part GS may be configured to supply at least two gases to the substrate processing device SP. To this end, the gas supply part GS may include a first gas supply device or a first gas supplier 11, a second gas supply device or a second gas supplier 13, a third gas supply device or a third gas supplier 15, a fourth gas supply device or a fourth gas supplier 17, a fifth gas supply device or a fifth gas supplier 19, a gas mixing device 3, a first pipeline 1a, a second pipeline 1b, and a third pipeline 1c.

[0035] The first gas supply device 11 may be configured to store and supply the first gas. To this end, the first gas supply device 11 may include a gas tank and a compressor. The first gas may be, for example, a carrier gas and / or a purge gas. To this end, the first gas may include an inert gas. For example, the first gas may include nitrogen (N 2 ) and / or argon (Ar), but the inventive concept is not limited to this example. The first gas supply device 11 may be connected to the gas mixing device 3. More specifically, the first gas supply device 11 may be connected to the gas mixing device 3 through a first pipe 1a.

[0036] The second gas supply device 13 may be configured to store and supply the second gas. To this end, the second gas supply device 13 may include a gas tank and a compressor. The second gas may include a reactive gas. For example, the second gas may include TiCl 4 Gas, NH 3 Gas and / or C 6 H 18Al 2 The second gas supply device 13 may be connected to the gas mixing device 3. More specifically, the second gas supply device 13 may be connected to the gas mixing device 3 through a second pipe 1b.

[0037] The third gas supply device 15 may be configured to store and supply the third gas. To this end, the third gas supply device 15 may include a gas tank and a compressor. For example, the third gas may be a carrier gas and / or a purge gas. To this end, the third gas may include an inert gas. For example, the third gas may include nitrogen (N 2 ) and / or argon (Ar). In other words, the third gas may contain the same type of gas as the first gas. However, the inventive concept is not limited to this example. The third gas supply device 15 may be connected to the gas mixing device 3. More specifically, the third gas supply device 15 may be connected to the gas mixing device 3 through a third pipe 1c.

[0038] The fourth gas supply device 17 may be configured to store and supply the fourth gas. To this end, the fourth gas supply device 17 may include a gas tank and a compressor. In some embodiments, the fourth gas may be a carrier gas and / or a purge gas. To this end, the fourth gas may include an inert gas. For example, the fourth gas may include nitrogen (N 2 ) and / or argon (Ar). In other words, the fourth gas may contain the same type of gas as the first gas. However, the inventive concept is not limited to this example. The fourth gas supply device 17 may be connected to the gas mixing device 3. More specifically, the fourth gas supply device 17 may be connected to the gas mixing device 3 through the second pipeline 1b. In other words, both the second gas supply device 13 and the fourth gas supply device 17 may be connected to the gas mixing device 3 through the same pipeline.

[0039] The fifth gas supply device 19 may be configured to store and supply the fifth gas. To this end, the fifth gas supply device 19 may include a gas tank and a compressor. The fifth gas may include a reactive gas. For example, the fifth gas may include TiCl 4 Gas, NH 3 Gas and / or C 6 H 18 Al 2 gas. However, the fifth gas and the second gas may be of different kinds. The fifth gas supply device 19 may be connected to the gas mixing device 3. More specifically, the fifth gas supply device 19 may be connected to the gas mixing device 3 via a third pipe 1c. In other words, both the third gas supply device 15 and the fifth gas supply device 19 may be connected to the gas mixing device 3 via the same pipe.

[0040] The gas mixing device 3 may be configured to mix at least two gases. To this end, the gas mixing device 3 may be connected to the first gas supply device 11, the second gas supply device 13, the third gas supply device 15, the fourth gas supply device 17, and the fifth gas supply device 19. In addition, the gas mixing device 3 may supply the mixed gas to the substrate processing device SP. To this end, the gas mixing device 3 may be connected to the substrate processing device SP. The gas mixing device 3 will be described in more detail below.

[0041] The first pipe 1 a may connect the first gas supply device 11 to the gas mixing device 3 .

[0042] The second pipe 1 b may connect each of the second gas supply device 13 and the fourth gas supply device 17 to the gas mixing device 3 .

[0043] The third pipe 1 c may connect each of the third gas supply device 15 and the fifth gas supply device 19 to the gas mixing device 3 .

[0044] Figure 2 is a perspective view showing a gas mixing device according to some embodiments of the present inventive concept, and Figure 3 is a perspective view illustrating a gas mixing device according to some embodiments of the inventive concept.

[0045] In the present application, reference numerals D1, D2, and D3 will be used to represent a first direction, a second direction, and a third direction that are not parallel to each other, respectively. The first direction D1 may be referred to as a vertical direction or an upward direction. In addition, each of the second direction D2 and the third direction D3 may be referred to as a horizontal direction. The first direction D1, the second direction D2, and the third direction D3 may be orthogonal to each other, but the inventive concept is not limited to this example.

[0046] Reference Figure 2 and Figure 3 The gas mixing device 3 may include a main pipeline 31 , a first gas transmission device or an internal gas transmission device 33 , and a second gas transmission device or an external gas transmission device 35 .

[0047] The main conduit 31 may provide a main path or main channel 31h. The main path 31h may extend in a first direction D1. The main conduit 31 may be connected to a substrate processing device SP (eg, see Figure 1 More specifically, the main pipe 31 may be connected to the nozzle 7 or the space within the nozzle 7 (see, for example, Figure 1 The main pipeline 31 can be connected to the first pipeline 1a (see, for example, Figure 1 ). That is, the main pipeline 31 may connect the first pipeline 1a to the substrate processing device SP. Alternatively, the main pipeline 31 and the first pipeline 1a may form a single or unitary object. Figure 1 )The first gas supplied may be transported to the substrate processing device SP along the main pipeline 31.

[0048] The first gas transmission device 33 may be connected to the main pipeline 31. The first gas transmission device 33 may be connected to the second pipeline 1b (e.g., see Figure 1 ). In other words, the first gas transmission device 33 may connect the second pipeline 1b to the main pipeline 31. The gas in the second pipeline 1b may be transmitted to the main pipeline 31 through the first gas transmission device 33. To this end, the first gas transmission device 33 may include a first distribution device 331, a first supply pipeline 333, and a first connecting pipeline 335.

[0049] The first distribution device 331 may be provided to at least partially surround or enclose the main pipe 31. For example, the first distribution device 331 may be spaced apart from the main pipe 31. More specifically, the first distribution device 331 may be spaced apart from the main pipe 31 in the radial direction. When viewed in a plan view, the first distribution device 331 may have a circular shape. The first distribution device 331 may extend a certain length in the first direction D1. That is, the first distribution device 331 may have a cylindrical shape. A first distribution space 331h (for example, see Figure 4 ). The first dispensing device 331 will be described in more detail below.

[0050] The first supply pipe 333 may be connected to the first distribution device 331. For example, the first supply pipe 333 may be connected to the outer side surface of the first distribution device 331. The first supply pipe 333 may be connected to the second pipe 1b (for example, see Figure 1 ). That is, the second pipe 1b and the first distribution device 331 may be connected to each other through the first supply pipe 333. Alternatively, the first supply pipe 333 and the second pipe 1b may form a single or unitary object. The first supply pipe 333 will be described in more detail below.

[0051] The first connecting pipe 335 may connect the first distribution device 331 to the main pipe 31. In some embodiments, a plurality of first connecting pipes 335 may be provided. The first connecting pipes 335 may be provided to be spaced apart from each other in the radial or circumferential direction. For example, the first gas transmission device 33 may be provided to include eight first connecting pipes 335. However, in order to reduce the complexity of the description, the following description will refer to an example in which the first gas transmission device 33 includes one first connecting pipe 335 unless the context clearly indicates otherwise.

[0052] The second gas transmission device 35 may be connected to the main pipeline 31. The second gas transmission device 35 may be connected to the third pipeline 1c (for example, see Figure 1). That is, the second gas transmission device 35 can connect the third pipeline 1c to the main pipeline 31. The gas in the third pipeline 1c can be transmitted to the main pipeline 31 through the second gas transmission device 35. To this end, the second gas transmission device 35 may include a second distribution device 351, a second supply pipeline 353, and a second connecting pipeline 355.

[0053] The second distribution device 351 may be provided to at least partially surround or enclose the main pipe 31 and the first distribution device 331. For example, the second distribution device 351 may be spaced apart from the first distribution device 331. More specifically, the second distribution device 351 may be spaced apart from the first distribution device 331 in the radial direction. When viewed in a plan view, the second distribution device 351 may have a circular shape. The second distribution device 351 may extend a certain length in the first direction D1. That is, the second distribution device 351 may have a cylindrical shape. A second distribution space 351h (for example, see Figure 4 ).

[0054] The second distribution device 351 may also be provided with a connection hole or connection groove 351a. The connection hole 351a may be formed to have a shape that is recessed downward from the top surface 351u of the second distribution device 351. The first supply pipe 333 may be connected to the first distribution device 331 through the connection hole 351a. The connection hole 351a may not be connected to the second distribution space 351h (for example, see Figure 5 ). The second dispensing device 351 will be described in more detail below.

[0055] The second supply pipe 353 may be connected to the second distribution device 351. For example, the second supply pipe 353 may be connected to the outer side surface of the second distribution device 351. The second supply pipe 353 may be connected to the third pipe 1c (for example, see Figure 1 ). That is, the third pipe 1c and the second distribution device 351 may be connected to each other through the second supply pipe 353. Alternatively, the second supply pipe 353 and the third pipe 1c may be arranged to form a single or unitary object. The second supply pipe 353 will be described in more detail below.

[0056] The second connecting pipe 355 may connect the second distribution device 351 to the main pipe 31. In some embodiments, a plurality of second connecting pipes 355 may be provided. The second connecting pipes 355 may be provided to be spaced apart from each other in the radial or circumferential direction. For example, the second gas transmission device 35 may be provided to include eight second connecting pipes 355. However, in order to reduce the complexity of the description, the following description will refer to an example in which the second gas transmission device 35 includes one second connecting pipe 355 unless the context clearly indicates otherwise.

[0057] Figure 4is a cross-sectional view showing a gas mixing device according to some embodiments of the present inventive concept, Figure 5 is a cross-sectional view showing a gas mixing device according to some embodiments of the present inventive concept, Figure 6 is a plan view showing a gas mixing device according to some embodiments of the present inventive concept, Figure 7 is a cross-sectional view illustrating a gas mixing device according to some embodiments of the inventive concept.

[0058] Reference Figures 4 to 7 The first dispensing device 331 may include a first inner cylinder 3311 and a first outer cylinder 3313 .

[0059] The first inner cylinder 3311 may at least partially surround or enclose the main conduit 31. For example, the first inner cylinder 3311 may be radially spaced apart from the main conduit 31. Therefore, the length of the first connecting conduit 335 may be freely designed. For example, the distance between the first inner cylinder 3311 and the main conduit 31 may be set to achieve the length of the first connecting conduit 335 for a desired value of the conductance or resistance of the conduction path or flow path. Therefore, the conductance of the conduction path may be controlled to achieve a smooth airflow.

[0060] The first outer cylinder 3313 may be disposed to at least partially surround or enclose the first inner cylinder 3311. The first outer cylinder 3313 may be spaced apart from the first inner cylinder 3311 in the radial direction.

[0061] The first distribution space 331h may be arranged between the first inner cylinder 3311 and the first outer cylinder 3313. When viewed in a plan view, the first distribution space 331h may have an annular or ring-shaped shape. The length of the first distribution space 331h in the first direction D1 may be referred to as the first height h1. The length of the first distribution space 331h in the radial direction may be referred to as the first width DS1. The first width DS1 may be the minimum horizontal distance between the first inner cylinder 3311 and the first outer cylinder 3313. The upper end of the first distribution space 331h may be closed. To this end, the first distribution device 331 may also include an upper member. In addition, except for the portion connected to the first connecting pipe 335, the lower end of the first distribution space 331h may be closed. To this end, the first distribution device 331 may also include a lower member.

[0062] The first supply conduit 333 may provide a first supply path or channel 333h. The first supply conduit 333 may be coupled to the first outer cylinder 3313. For example, the first supply conduit 333 may be coupled to the outer side surface of the first outer cylinder 3313. The first supply path 333h may be connected to the first distribution space 331h. The diameter of the first supply path 333h may be referred to as the first diameter DA1. The extension direction of the first supply path 333h may be perpendicular to the first direction D1. Therefore, the gas injected into the first distribution space 331h along the first supply path 333h may collide with the outer side surface of the first inner cylinder 3311 and may be dispersed in the circumferential direction. Therefore, the gas injected into the first distribution space 331h may be dispersed smoothly in the circumferential direction.

[0063] In some embodiments, the first diameter DA1 may be smaller than the first height h1. For example, the first height h1 may be equal to or greater than about 3 times the first diameter DA1. Therefore, the gas injected into the first distribution space 331h along the first supply path 333h may be fully dispersed in the first distribution space 331h before being discharged from the main pipe 31 through the first connecting pipe 335.

[0064] The first injection hole or the first injection position where the first supply path 333h and the first distribution space 331h meet each other may be spaced apart from the upper end of the first distribution space 331h in the downward direction. In addition, the first injection hole may be located at a level higher than the center of the first distribution space 331h. Therefore, at least a portion of the gas injected into the first distribution space 331h along the first supply path 333h may collide with the outer side surface of the first inner cylinder 3311 and may move in the upward direction. Therefore, the gas in the first distribution space 331h may be fully dispersed in the circumferential direction.

[0065] The first connecting pipe 335 may extend linearly from the first distribution device 331 toward the main pipe 31. The extension direction of the first connecting pipe 335 may be inclined at an acute angle relative to the first direction D1. The first connecting pipe 335 may provide a first connection path 335h. The diameter of the first connection path 335h may be referred to as a first connection diameter DX1. The first connection path 335h may be connected to the first distribution space 331h. The first connecting pipe 335 may be connected to the lower end of the first distribution space 331h. The extension direction of the first connecting pipe 335 may be inclined at an acute angle relative to the first direction D1. Therefore, the gas in the first distribution space 331h can be effectively discharged through the first connecting pipe 335.

[0066] The second dispensing device 351 may include a second inner cylinder 3511 and a second outer cylinder 3513 .

[0067] The second inner cylinder 3511 may be disposed to at least partially surround or enclose the first outer cylinder 3313. For example, the second inner cylinder 3511 may be spaced apart from the first outer cylinder 3313 in the radial direction.

[0068] The second outer cylinder 3513 may be disposed to at least partially surround or enclose the second inner cylinder 3511. The second outer cylinder 3513 may be spaced apart from the second inner cylinder 3511 in the radial direction.

[0069] The second distribution space 351h may be arranged between the second inner cylinder 3511 and the second outer cylinder 3513. When viewed in a plan view, the second distribution space 351h may have an annular or ring-shaped shape. The length of the second distribution space 351h in the first direction D1 may be referred to as the second height h2. The length of the second distribution space 351h in the radial direction may be referred to as the second width DS2. The second width DS2 may be the minimum horizontal distance between the second inner cylinder 3511 and the second outer cylinder 3513. The second width DS2 may be greater than the first width DS1. The upper end of the second distribution space 351h may be closed. To this end, the second distribution device 351 may also include an upper member. In addition, except for the portion connected to the second connecting pipe 355, the lower end of the second distribution space 351h may be closed. To this end, the second distribution device 351 may also include a lower member.

[0070] The second supply conduit 353 may provide a second supply path or channel 353h. The second supply conduit 353 may be coupled to the second outer cylinder 3513. For example, the second supply conduit 353 may be coupled to the outer side surface of the second outer cylinder 3513. The second supply path 353h may be connected to the second distribution space 351h. The diameter of the second supply path 353h may be referred to as the second diameter DA2. The extension direction of the second supply path 353h may be perpendicular to the first direction D1. Therefore, the gas injected into the second distribution space 351h along the second supply path 353h may collide with the outer side surface of the second inner cylinder 3511 and may be dispersed circumferentially. Therefore, the gas supplied to the second distribution space 351h may be effectively dispersed circumferentially. The second supply conduit 353 may be located at a level substantially the same as the first supply conduit 333 (e.g., vertical level), but the inventive concept is not limited to this example.

[0071] In some embodiments, the second diameter DA2 may be smaller than the second height h2. For example, the second height h2 may be greater than about 3 times the second diameter DA2. Therefore, the gas injected into the second distribution space 351h along the second supply path 353h may be fully dispersed in the second distribution space 351h before being discharged from the main pipe 31 through the second connecting pipe 355. The second diameter DA2 may be greater than the first diameter DA1, but the inventive concept is not limited to this example.

[0072] The second injection hole or the second injection position where the second supply path 353h and the second distribution space 351h meet each other may be spaced apart from the upper end of the second distribution space 351h in the downward direction. In addition, the second injection hole may be located at a level higher than the center of the second distribution space 351h. Therefore, at least a portion of the gas injected into the second distribution space 351h along the second supply path 353h may collide with the outer side surface of the second inner cylinder 3511 and may move in the upward direction. Therefore, the gas in the second distribution space 351h may be fully dispersed in the circumferential direction.

[0073] The second connecting conduit 355 may extend linearly from the second distribution device 351 toward the main conduit 31. The extension direction of the second connecting conduit 355 may be inclined at an acute angle relative to the first direction D1. The second connecting conduit 355 may provide a second connecting path or channel 355h. The diameter of the second connecting path 355h may be referred to as a second connecting diameter DX2. The length of the second connecting path 355h may be greater than the length of the first connecting path 335h. In contrast, the second connecting diameter DX2 may be greater than the first connecting diameter DX1. Therefore, the flow conductance or resistance of the first connecting path 335h may be substantially equal to or similar to the flow conductance or resistance of the second connecting path 355h. Alternatively, the difference in flow conductance between the first connecting path 335h and the second connecting path 355h may be relatively small. Therefore, even when the first connecting path 335h and the second connecting path 355h are interchangeably used, substantially similar gas flow rates may be achieved. The second connecting path 355h may be connected to the second distribution space 351h. The second connecting conduit 355 may be connected to the lower end of the second distribution space 351h. The extending direction of the second connection pipe 355 may be inclined at an acute angle with respect to the first direction D1 . Therefore, the gas in the second distribution space 351 h may be effectively discharged through the second connection pipe 355 .

[0074] The upper end of the second distribution device 351 and the upper end of the first distribution device 331 may be located at substantially the same level (e.g., vertical level). The second height h2 may be greater than the first height h1. Therefore, the upper end of the first connection pipe 335 may be located at a higher level (e.g., vertical level) than the upper end of the second connection pipe 355. In addition, the lower end of the first connection pipe 335 may be located at a higher level (e.g., vertical level) than the lower end of the second connection pipe 355.

[0075] Figure 8 is a flowchart illustrating a substrate processing method according to some embodiments of the inventive concept.

[0076] Reference Figure 8 , a substrate processing method SS may be provided or performed. The substrate processing method SS may be a method using a reference Figures 1 to 7The substrate processing system PS is described as a method of processing a substrate. The substrate processing method SS may include placing a substrate in a substrate processing apparatus (in S1) and supplying a gas to the substrate processing apparatus (in S2).

[0077] Supplying a gas to the substrate processing apparatus (in S2 ) may include supplying a gas in a first mode (in S21 ) and supplying a gas in a second mode (in S22 ).

[0078] Supplying gas in a first mode (in S21) may include supplying a first gas (in S211), supplying a second gas (in S212), supplying a third gas (in S213), mixing the gases (in S214), and supplying the mixed gas to a space on the substrate (in S215).

[0079] Supplying gas in the second mode (in S22) may include supplying a first gas (in S221), supplying a fourth gas (in S222), supplying a fifth gas (in S223), mixing the gases (in S224), and supplying the mixed gas to a space on the substrate (in S225).

[0080] Supplying gas in the second mode (in S22) may be performed after supplying gas in the first mode (in S21) is completed. That is, the second mode may be performed after the first mode is completed. Alternatively, the first mode and the second mode may be repeated alternately.

[0081] Below, we will refer to Figures 9 to 15 Describe in more detail Figure 8 Substrate processing method SS.

[0082] Figures 9 to 15 It shows that according to Figure 8 Schematic diagram of a flow chart of a substrate processing method.

[0083] Reference Fig. 9 and Figure 8 , placing the substrate in the substrate processing apparatus (in S1) may include loading the substrate WF on the chuck 9. The chuck 9 may secure the substrate WF to a specific position.

[0084] Reference Fig.10 , Fig.11 , Fig.12 , Fig.13 and Figure 8 The supply of the first gas (in S211 ) may include supplying the first gas G1 from the first gas supply device 11 to the gas mixing device 3 . The first gas G1 may be injected into the main pipeline 31 .

[0085] The supply of the second gas (in S212) may include supplying the second gas G2 from the second gas supply device 13 to the gas mixing device 3. The second gas G2 may be injected into the main pipeline 31 through the first gas transmission device 33. More specifically, the second gas G2 may be injected into the first distribution space 331h through the first supply pipeline 333. The second gas G2 injected into the first distribution space 331h may be dispersed in the circumferential direction along the outer side surface of the first inner cylinder 3311. Thereafter, the second gas G2 may be injected into the main pipeline 31 along the first connecting pipeline 335.

[0086] The supply of the third gas (in S213) may include supplying the third gas G3 from the third gas supply device 15 to the gas mixing device 3. The third gas G3 may be injected into the main pipeline 31 through the second gas transmission device 35. More specifically, the third gas G3 may be injected into the second distribution space 351h through the second supply pipeline 353. The third gas G3 injected into the second distribution space 351h may be dispersed in the circumferential direction along the outer side surface of the second inner cylinder 3511. Thereafter, the third gas G3 may be injected into the main pipeline 31 along the second connecting pipeline 355.

[0087] The mixing of the gases (in S214) may include mixing the second gas G2 injected into the main pipe 31 with the first gas G1. In addition, the third gas G3 injected into the main pipe 31 may be mixed with the first gas G1 and / or the second gas G2.

[0088] Supplying the mixed gas to the space of the substrate (in S215) may include supplying the mixed gas PG to the space on the substrate WF through the shower head 7. The mixed gas PG supplied to the space on the substrate WF may be used to form a deposition layer on the substrate WF.

[0089] Reference Fig.14 , Fig.13 and Figure 8 The supply of the first gas (in S221 ) may include supplying the first gas G1 from the first gas supply device 11 to the gas mixing device 3 . The first gas G1 may be injected into the main pipeline 31 .

[0090] The supply of the fourth gas (in S222) may include supplying the fourth gas G4 from the fourth gas supply device 17 to the gas mixing device 3. The fourth gas G4 may be injected into the main pipeline 31 through the first gas transmission device 33. More specifically, the fourth gas G4 may be injected into the first distribution space 331h through the first supply pipeline 333. The fourth gas G4 injected into the first distribution space 331h may be dispersed in the circumferential direction along the outer side surface of the first inner cylinder 3311. Thereafter, the fourth gas G4 may be injected into the main pipeline 31 along the first connecting pipeline 335.

[0091] The supply of the fifth gas (in S223) may include supplying the fifth gas G5 from the fifth gas supply device 19 to the gas mixing device 3. The fifth gas G5 may be injected into the main pipeline 31 through the second gas transmission device 35. More specifically, the fifth gas G5 may be injected into the second distribution space 351h through the second supply pipeline 353. The fifth gas G5 injected into the second distribution space 351h may be dispersed in the circumferential direction along the outer side surface of the second inner cylinder 3511. Thereafter, the fifth gas G5 may be injected into the main pipeline 31 along the second connecting pipeline 355.

[0092] The mixing of the gases (in S224) may include mixing the fourth gas G4 injected into the main pipe 31 with the first gas G1. In addition, the fifth gas G5 injected into the main pipe 31 may be mixed with the first gas G1 and / or the fourth gas G4.

[0093] Supplying the mixed gas to the space on the substrate (in S225) may include supplying the mixed gas PGa to the space on the substrate WF through the shower head 7. The mixed gas PGa supplied to the space on the substrate WF may be used to form a deposition layer on the substrate WF.

[0094] Reference Fig.15 and Figure 8 , the substrate processing method SS may further include cleaning the substrate processing system. For the cleaning process, the first gas supply device 11, the third gas supply device 15 and / or the fourth gas supply device 17 may be configured to supply the first gas G1, the third gas G3 and / or the fourth gas G4, respectively. The first gas G1, the third gas G3 and / or the fourth gas G4 may be used to form a gas PGb to clean the gas mixing device 3 and / or the substrate processing device SP.

[0095] In a gas mixing device according to some embodiments of the present invention, a substrate processing system including the gas mixing device, and a substrate processing method using the substrate processing system, two or more gases can be effectively mixed. Specifically, the two or more gases can be uniformly mixed with each other. Therefore, the processing of the substrate can be effectively performed.

[0096] In a gas mixing device according to some embodiments of the present invention, a substrate processing system including the gas mixing device, and a substrate processing method using the substrate processing system, two or more reaction gases can be prevented from being mixed with each other in advance in the gas mixing device. More specifically, since the first distribution space is separated from the second distribution space, the second gas and the fifth gas can be prevented from mixing with each other in the first distribution space and / or the second distribution space during the time period when the process changes from the first mode to the second mode. Therefore, the two reaction gases can be prevented from reacting with each other in at least one of the first distribution space and the second distribution space, and particle formation problems can be prevented from occurring. Since particle formation problems are prevented, the substrate can be prevented from being damaged. In addition, the process of cleaning the gas mixing device can be performed more easily.

[0097] In a gas mixing device, a substrate processing system including the gas mixing device, and a substrate processing method using the substrate processing system according to some embodiments of the present inventive concept, the flow conductance or resistance characteristics of several pipelines can be controlled. For example, by separating the first distribution device from the main pipeline, the length of the conduction path or flow path connecting the first distribution device to the main pipeline can be designed in a desired manner. In addition, the first gas transmission device and the second gas transmission device can be designed to have substantially the same or similar flow conductance. Therefore, a smooth gas flow can be achieved.

[0098] Fig.16 is a perspective view showing a gas mixing device according to some embodiments of the present inventive concept, Fig.17 is a perspective view showing a gas mixing device according to some embodiments of the present inventive concept, Fig.18 is a cross-sectional view illustrating a gas mixing device according to some embodiments of the inventive concept.

[0099] In the following description, for the sake of simplicity, the previous reference Figures 1 to 15 The described elements may be identified by the same reference numerals without repeating their repeated descriptions.

[0100] Reference Figures 16 to 18 , a gas mixing device 3' may be provided. The gas mixing device 3' may further include a third gas transmission device 37. The third gas transmission device 37 may include a third distribution device 371, a third supply pipeline 373 and a third connecting pipeline 375.

[0101] The third dispensing device 371 may include a third inner cylinder 3711 and a third outer cylinder 3713 .

[0102] The third inner cylinder 3711 can be configured to at least partially surround or enclose the second outer cylinder 3513 (e.g., see Figure 7 ). The third inner cylinder 3711 may be spaced apart from the second outer cylinder 3513 in the radial direction.

[0103] The third outer cylinder 3713 may be disposed to at least partially surround or enclose the third inner cylinder 3711. The third outer cylinder 3713 may be spaced apart from the third inner cylinder 3711 in the radial direction.

[0104] The third distribution space 371 h may be disposed between the third outer cylinder 3713 and the third inner cylinder 3711 .

[0105] The third distribution device 371 may also be provided with a first connection hole or a first connection groove 371a and a second connection hole or a second connection groove 371b. Each of the first connection hole 371a and the second connection hole 371b may be formed to have a shape that is recessed downward from the top surface of the third distribution device 371. The first supply pipe 333 may be provided to penetrate or extend through the first connection hole 371a. The second supply pipe 353 may be provided to penetrate or extend through the second connection hole 371b.

[0106] The third supply conduit 373 may be coupled to an outer side surface of the third outer cylinder 3713. The third supply conduit 373 may provide a third supply path or passage. The third supply path may be connected to the third dispensing space 371h.

[0107] The third connecting pipe 375 may connect the third distributing device 371 to the main pipe 31. In some embodiments, a plurality of third connecting pipes 375 may be provided. The third connecting pipes 375 may be arranged to be spaced apart from each other in a circumferential direction.

[0108] In a gas mixing apparatus, a substrate processing system including the same, and a substrate processing method using the same according to some embodiments of the inventive concept, four or more gases may be mixed at one time.

[0109] In a gas mixing apparatus, a substrate processing system including the same, and a substrate processing method using the same according to some embodiments of the inventive concept, two or more gases may be effectively mixed.

[0110] In a gas mixing device, a substrate processing system including the same, and a substrate processing method using the same according to some embodiments of the inventive concept, two or more gases may be prevented from reacting with each other in the gas mixing device and particle formation problems may be prevented.

[0111] In a gas mixing apparatus according to some embodiments of the inventive concept, a substrate processing system including the same, and a substrate processing method using the same, gas may be uniformly supplied.

[0112] In a gas mixing device, a substrate processing system including the same, and a substrate processing method using the same according to some embodiments of the inventive concept, conductance or resistance of a conduction path or a flow path may be controlled and smooth gas flow may be achieved.

[0113] While example embodiments of the inventive concepts have been particularly shown and described, it will be understood by those skilled in the art that changes in form and details may be made therein without departing from the scope of the appended claims.

Claims

1. A gas mixing device, comprising: a main conduit defining a main path extending in a first direction; as well as a first gas transmission device connected to the main pipeline, Wherein, the first gas transmission device comprises: a first distribution device surrounding the main conduit; a first supply conduit connected to the first distribution device and defining a first supply path; and a plurality of first connecting pipes connecting the first distribution device to the main pipe, Wherein, the first dispensing device comprises: a first inner cylinder surrounding the main conduit and radially spaced apart from the main conduit; and a first outer cylinder surrounding the first inner cylinder and being radially spaced apart from the first inner cylinder, wherein the first distribution space is defined between the first inner cylinder and the first outer cylinder, The first supply conduit is coupled to the first outer cylinder so that the first supply path is connected to the first distribution space, and The plurality of first connecting pipes are spaced apart from each other in the circumferential direction.

2. The gas mixing device according to claim 1, further comprising a second gas transmission device connected to the main pipeline, in, The second gas transmission device comprises: a second distribution device surrounding the first distribution device; a second supply conduit connected to the second distribution device and defining a second supply path; and a plurality of second connecting pipes connecting the second distribution device to the main pipe, Wherein, the second distribution device comprises: a second inner cylinder surrounding the first outer cylinder and radially spaced apart from the first outer cylinder; and a second outer cylinder surrounding the second inner cylinder and being radially spaced apart from the second inner cylinder, wherein the second distribution space is defined between the second inner cylinder and the second outer cylinder, The second supply conduit is coupled to the second outer cylinder so that the second supply path is connected to the second distribution space, and The plurality of second connecting pipes are spaced apart from each other in the circumferential direction.

3. The gas mixing device according to claim 2, wherein: The first supply conduit is at the same vertical level as the second supply conduit.

4. The gas mixing device according to claim 2, wherein: A first height, which is a length of the first allocated space in the first direction, is smaller than a second height, which is a length of the second allocated space in the first direction.

5. The gas mixing device according to claim 4, wherein: The upper end of the first distribution device is at the same vertical level as the upper end of the second distribution device.

6. The gas mixing device according to claim 2, wherein: A vertical level of a lower end of each of the plurality of first connection pipes is higher than a vertical level of a lower end of each of the plurality of second connection pipes.

7. The gas mixing device according to claim 2, wherein: A diameter of each of the plurality of first connection pipes is smaller than a diameter of each of the plurality of second connection pipes.

8. The gas mixing device according to claim 2, wherein: A minimum horizontal distance between the first inner cylinder and the first outer cylinder is smaller than a minimum horizontal distance between the second inner cylinder and the second outer cylinder.

9. The gas mixing device according to claim 2, wherein: The second dispensing device further includes a connecting hole recessed downward from a top surface of the second dispensing device, and The first supply conduit is connected to the first dispensing device and extends through the connecting hole.

10. The gas mixing device according to claim 2, further comprising a third gas transmission device connected to the main pipeline, in, The third gas transmission device comprises: a third distribution device surrounding the second distribution device; a third supply conduit connected to the third distribution device and defining a third supply path; and a plurality of third connecting pipes, which connect the third distribution device to the main pipe, Wherein, the third dispensing device comprises: a third inner cylinder surrounding the second outer cylinder and radially spaced apart from the second outer cylinder; and a third outer cylinder surrounding the third inner cylinder and being radially spaced apart from the third inner cylinder, wherein the third distribution space is defined between the third inner cylinder and the third outer cylinder, The third supply conduit is coupled to the outer side surface of the third outer cylinder so that the third supply path is connected to the third distribution space, and The plurality of third connecting pipes are spaced apart from each other in the circumferential direction.

11. The gas mixing device according to claim 1, wherein: A first height that is a length of the first distribution space in the first direction is equal to or greater than three times a first diameter that is a diameter of the first supply path.

12. The gas mixing device according to claim 1, wherein: Each of the plurality of first connecting pipes extends linearly from the first distribution device toward the main pipe, and An extending direction of each of the plurality of first connecting pipes is inclined at an acute angle with respect to the first direction.

13. The gas mixing device according to claim 1, wherein: Each of the plurality of first connection pipes is connected to a lower end of the first distribution space.

14. The gas mixing device according to claim 1, wherein: The number of the plurality of first connecting pipes is eight.

15. The gas mixing device according to claim 1, wherein: The first supply pipe is connected to the outer side surface of the first outer cylinder, and An extending direction of the first supply path is perpendicular to the first direction.

16. A gas mixing device comprising: a main pipeline extending in a vertical direction; as well as a first gas transmission device connected to the main pipeline, Wherein, the first gas transmission device comprises: a first distribution device surrounding the main conduit; a first supply conduit connected to an outer side surface of the first dispensing device and defining a first supply path; and a plurality of first connecting pipes connecting the first distribution device to the main pipe, Wherein, the first dispensing device comprises: a first inner cylinder surrounding the main conduit; and a first outer cylinder surrounding the first inner cylinder and spaced apart from the first inner cylinder, wherein a first distribution space is defined between the first inner cylinder and the first outer cylinder, and A first height of the first distribution space is at least three times a first diameter of the first supply path.

17. The gas mixing device according to claim 16, wherein: A first injection hole where the first supply path and the first distribution space meet each other is spaced apart from an upper end of the first distribution space, and The first injection hole is located at a higher vertical level than a center of the first distribution space.

18. A gas mixing device comprising: a main conduit connecting the first gas supply device to the substrate processing device; as well as a first gas transmission device connected to the main pipeline, Wherein, the first gas transmission device comprises: a first distribution device surrounding the main conduit; a first supply conduit connecting a second gas supply device to the first distribution device; and a plurality of first connecting pipes connecting the first distribution device to the main pipe, Wherein, the first dispensing device comprises: a first inner cylinder surrounding the main conduit; and a first outer cylinder surrounding the first inner cylinder and being radially spaced apart from the first inner cylinder, Wherein, the plurality of first connecting pipes are spaced apart from each other in the circumferential direction.

19. The gas mixing device of claim 18, wherein: The main pipeline is connected to a space in or above a showerhead of the substrate processing device.

20. The gas mixing device of claim 18, further comprising a second gas transmission device connected to the main pipeline, in, The second gas transmission device comprises: a second distribution device surrounding the first distribution device; a second supply conduit connecting a third gas supply device to the second distribution device; and a plurality of second connecting pipes connecting the second distribution device to the main pipe, Wherein, the second distribution device comprises: a second inner cylinder surrounding the first outer cylinder; and A second outer cylinder surrounds the second inner cylinder and is spaced apart from the second inner cylinder in a radial direction.

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