Systems and methods for semiconductor devices having die-to-die interfaces

Abstract

The present technology relates to systems and methods for a semiconductor device having a die-to-die interface. In an embodiment, the present technology provides an apparatus including a first circuit, the first circuit including a first interface. The apparatus further includes a first memory device coupled to the first circuit by a second circuit. The second circuit includes a second interface coupled to the first memory device and a third interface coupled to the first circuit. The one or more interfaces of the device are optimized to support high data rates, breaking design constraints between the circuitry and the associated memory device. Other embodiments are also present.

Description

[0001] CROSS REFERENCE TO RELATED APPLICATIONS

[0002] This application is a non-provisional application of U.S. patent application No. 63 / 510,066 filed by Tufano on June 23, 2023 and entitled "Method for Bridging Die to Die Chiplet Interfaces to High Bandwidth Memory," all teachings of which are incorporated herein by reference for all purposes. Technical Field

[0003] The present technology relates to systems and methods for semiconductor devices having a die-to-die interface. Background Art

[0004] Integrated circuit (IC) design in the field of high-performance computers (HPC) and artificial intelligence (AI) is highly dependent on the efficiency and performance of memory systems. As modern computing models require fast data access and expanded storage, memory systems such as high-bandwidth memory (HBM) have become important components in systems on chips (SoCs). For example, HBM refers to a memory that provides a high-speed computer memory interface for 3D stacked synchronous dynamic random access memory (SDRAM), and it is a standardized stacked memory technology that provides very wide channels for data within the stack and between memory and logic. The key challenge in integrating such memory systems is the space limitations imposed by the need for short, electrically efficient connections between HBM and SoC. Due to space limitations, HBM needs to be located adjacent to the edge of the SoC. Therefore, the periphery of the SoC becomes a limiting factor in determining the number of HBMs that can be integrated in a system in package (SiP). Expanding the size of the SoC to accommodate more HBMs not only increases costs, but also faces manufacturing constraints.

[0005] In the past, various systems and methods have been proposed, but they are insufficient for the reasons explained below. New and improved integrated systems and methods for semiconductor devices are needed. Summary of the invention

[0006] In one aspect, the present disclosure provides an apparatus comprising: a first circuit comprising a first interface; a second circuit coupled to the first circuit, the second circuit comprising a second interface and a third interface, the third interface coupled to the first interface; an interposer coupled to the second circuit; and a first memory device coupled to the interposer, the first memory device comprising a fourth interface, the fourth interface coupled to the second interface; wherein the second interface is characterized by a first data rate, the third interface is characterized by a second data rate, and the second data rate is greater than the first data rate.

[0007] On the other hand, the present disclosure provides an apparatus comprising: a substrate; an interposer coupled to the substrate; a first circuit coupled to the interposer, the first circuit comprising a first interface; a second circuit coupled to the interposer, the second circuit comprising a second interface and a third interface, the third interface coupled to the first interface; and a first memory device coupled to the interposer, the first memory device comprising a fourth interface, the fourth interface coupled to the second interface; wherein the second interface is characterized by a first data rate, the third interface is characterized by a second data rate, and the second data rate is greater than the first data rate.

[0008] On the other hand, the present disclosure provides an apparatus comprising: a substrate; a first circuit coupled to the substrate, the first circuit comprising a first interface; a second circuit coupled to the first circuit, the second circuit comprising a second interface and a third interface, the third interface coupled to the first interface; and a first memory device coupled to the second circuit, the first memory device comprising a fourth interface, the fourth interface coupled to the second interface; wherein the second interface is characterized by a first data rate, the third interface is characterized by a second data rate, and the second data rate is greater than the first data rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] A further understanding of the nature and advantages of particular embodiments may be achieved by reference to the remainder of the specification and drawings, wherein the same reference numerals are used to refer to similar components. In some instances, a sub-label is associated with a reference numeral to denote one of multiple similar components. When reference is made to a reference numeral without explicit reference to an existing sub-label, it is intended to refer to all such multiple similar components.

[0010] Figure 1 is a simplified diagram illustrating a semiconductor device featuring an integrated scheme in accordance with an embodiment of the present technology.

[0011] Figure 2 is a simplified diagram illustrating a cross-sectional view of a semiconductor device featuring an integrated scheme in accordance with an embodiment of the present technology.

[0012] Figure 3 is a simplified diagram illustrating a semiconductor device featuring an integrated scheme in accordance with an embodiment of the present technology.

[0013] Figure 4 is a simplified diagram illustrating a semiconductor device featuring an integrated scheme in accordance with an embodiment of the present technology. DETAILED DESCRIPTION

[0014] The present technology relates to systems and methods for semiconductor devices having a die-to-die interface. In an embodiment, the present technology provides an apparatus comprising a first circuit, the first circuit comprising a first interface. The apparatus further comprises a first memory device coupled to the first circuit through a second circuit. The second circuit comprises a second interface coupled to the first memory device and a third interface coupled to the first circuit. The one or more interfaces of the apparatus are optimized to support high data rates, breaking design constraints between the circuit and the associated memory device. Other embodiments exist.

[0015] Some methods for implementing semiconductor integration involve connecting one or more HBMs to SoCs through interconnects in an interposer. For example, a SoC or system on chip refers to an integrated circuit that combines multiple functional components of a computer or other electronic system onto a single chip. These components may include a central processing unit (CPU), a memory interface, an input / output device, an input / output interface, an auxiliary storage interface, and / or the like. The HBM may be configured as a discrete memory die that is connected to the SoC with wiring above the interposer through one or more physical interfaces. However, the placement of the HBM often faces spatial constraints—mainly determined by the configuration and size of the SoC—which poses challenges in both design scalability and flexibility. For example, the HBM must be closely aligned with the SoC to ensure the efficiency of data transmission. In addition, the size attributes of the SoC impose inherent limitations on the volume of the HBM content that can be incorporated into the system, which results in limited memory bandwidth and capacity, potentially hindering overall system performance in data-intensive applications. In addition, various industry standards adopt strict integration paradigms—any potential enhancements to the HBM will require corresponding modifications to the SoC—which not only limits design flexibility, but also raises concerns about future adaptability.

[0016] In various embodiments, the present technology provides a semiconductor device that breaks the design constraints between HBM and SoC by incorporating a bridge circuit coupled between the SoC and one or more associated HBMs. The interface of the bridge circuit is optimized to support high data rates compared to the HBM interface, resulting in enhanced bandwidth and increased data processing capabilities. This optimized interface provides the flexibility to accommodate extended routing lengths between the SoC and the HBM, ensuring minimized signal degradation and high-speed data transmission. In addition, by strategically embedding supporting digital logic customized for the HBM in the bridge circuit, embodiments of the present technology achieve another layer of operational flexibility. This modular architecture ensures that any changes to the HBM can be limited to the bridge circuit without affecting the SoC, achieving functional continuity and reducing potential design and test overhead associated with full system modifications.

[0017] The following description is presented to enable one of ordinary skill in the art to make and use the invention and incorporate it into the context of a particular application. Various modifications and various uses in different applications will be readily apparent to one of ordinary skill in the art, and the general principles defined herein can be applied to a wide range of embodiments. Therefore, the present technology is not intended to be limited to the embodiments presented, but should be consistent with the widest scope consistent with the principles and novel features disclosed herein.

[0018] In the following detailed description, in order to provide a more thorough understanding of the present technology, many specific details are set forth. However, it will be apparent to those skilled in the art that the present technology can be practiced without being limited to these specific details. In other examples, in order to avoid obscuring the present technology, well-known structures and devices are shown in block diagram form rather than in detail.

[0019] The reader's attention is directed to all papers and documents filed concurrently with this specification and disclosed for public inspection with this specification, and the contents of all such papers and documents are incorporated herein by reference. Unless otherwise expressly stated, all features disclosed in this specification (including any accompanying claims, abstracts and drawings) may be replaced by alternative features for the same, equivalent or similar purposes. Therefore, unless otherwise expressly stated, each feature disclosed is only an example of a general series of equivalent or similar features.

[0020] Furthermore, any element in a claim that does not explicitly state “means for” performing a specified function or “step for” performing a specified function should not be construed as a “means” or “step” clause as specified in 35 U.S.C. 112, paragraph 6. Specifically, the use of “the step of” or “the act of” in the claims herein is not intended to invoke the provisions of 35 U.S.C. 112, paragraph 6.

[0021] When an element is referred to herein as being "connected" or "coupled" to another element, it is understood that the element may be directly connected to the other element, or that there may be intervening elements between the elements. Conversely, when an element is referred to as being "directly connected" or "directly coupled" to another element, it is understood that there may be no intervening elements in the "direct" connection between the elements. However, the presence of a direct connection does not exclude other connections in which there may be intervening elements.

[0022] When an element is referred to herein as being "disposed" in some manner relative to another element (e.g., disposed on, disposed between, disposed below, disposed adjacent to, or disposed in some other relative manner), it is understood that the element may be disposed directly relative to the other element (e.g., disposed directly on the other element) or that there may be intervening elements between the elements. Conversely, when an element is referred to as being "directly disposed" relative to another element, it is understood that there are no intervening elements in the "direct" instance. However, the presence of a direct placement does not exclude other instances in which there may be intervening elements.

[0023] Similarly, when an element is referred to herein as being "joined" to another element, it is understood that the element may be joined directly to the other element (without any intervening elements), or with intervening elements between the joined elements. Conversely, when an element is referred to as being "directly joined" to another element, it is understood that there are no intervening elements in the "direct" joining between the elements. However, the presence of direct joining does not exclude other forms of joining in which intervening elements may be present.

[0024] Likewise, when an element is referred to herein as a "layer," it is understood that the layer may be a single layer or may include multiple layers. For example, a conductive layer may include a plurality of different conductive materials or multiple layers of different conductive materials, and a dielectric layer may include a plurality of dielectric materials or multiple layers of dielectric materials. When a layer is described as being coupled or connected to another layer, it is understood that the coupled or connected layer may include an intervening element that is present between the coupled or connected layers. Conversely, when a layer is referred to as being "directly" connected or coupled to another layer, it is understood that there are no intervening elements between the layers. However, the presence of a directly coupled or connected layer does not exclude other connections in which an intervening element may be present.

[0025] In addition, the terms left, right, front, back, top, bottom, forward, reverse, clockwise and counterclockwise are used only for explanation purposes and are not limited to any fixed direction or orientation. Instead, they are only used to indicate the relative position and / or direction between the various parts of an object and / or component.

[0026] In addition, for ease of description, the methods and processes described herein may be described in a particular order. However, it should be understood that unless the context otherwise requires, the intervening processes may occur before and / or after any portion of the described processes, and that various other procedures may be reordered, added, and / or omitted according to various embodiments.

[0027] Unless otherwise indicated, all numbers used herein to indicate quantities, dimensions, etc., are to be understood in all instances as being modified by the term "approximately". In this application, unless otherwise specifically stated, the use of the singular includes the plural, and the use of the terms "and" and "or" means "and / or" unless otherwise indicated. In addition, the use of the terms "includes" and "have" as well as other forms (e.g., "includes, included" and "has, have, had") should be considered non-exclusive. Moreover, unless otherwise specifically stated, terms such as "element" or "component" encompass both elements and components that constitute one unit and elements and components that constitute more than one unit.

[0028] As used herein, the phrase "at least one of..." preceding a series of items where the terms "and" or "or" are used to separate any items, modifies the list as a whole, rather than each member of the list (i.e., each item). The phrase "at least one of..." does not require selection of at least one of each item listed; rather, the phrase allows for a meaning that includes at least one of any one item and / or at least one of any combination of items. For example, the phrase "at least one of A, B, and C" or "at least one of A, B, or C" each refers to only A, only B, or only C; and / or any combination of A, B, and C. In instances where selection of "at least one of each of A, B, and C," or alternatively "at least one of A, at least one of B, and at least one of C," is desired, it is explicitly described as such.

[0029] A general aspect includes an apparatus including a first circuit, the first circuit including a first interface. The apparatus further includes a second circuit coupled to the first circuit. The second circuit includes a second interface and a third interface. The third interface is coupled to the first interface. The apparatus further includes an interposer coupled to the second circuit. The apparatus further includes a first memory device coupled to the interposer. The first memory device includes a fourth interface. The fourth interface is coupled to the second interface. In some embodiments, the second interface is characterized by a first data rate and the third interface is characterized by a second data rate. The second data rate is greater than the first data rate.

[0030] Embodiments may include one or more of the following features. The apparatus may further include a substrate coupled to the interposer. The first circuit may be coupled to the substrate. The interposer may include a first interconnect, and the first interface may be coupled to a third interface via the first interconnect. The interposer may include a second interconnect, and the second interface may be coupled to a fourth interface via the second interconnect. The second circuit further includes a controller configured to manage data flow between the first memory device and the first circuit. The first memory device may further include a high bandwidth memory. A ratio of the second data rate to the first data rate may be greater than 5:1.

[0031] According to another embodiment, the present technology provides an apparatus including a substrate and an interposer coupled to the substrate. The apparatus further includes a first circuit coupled to the interposer. The first circuit includes a first interface. The apparatus further includes a second circuit coupled to the interposer. The second circuit includes a second interface and a third interface, the third interface coupled to the first interface. The apparatus further includes a first memory device coupled to the interposer. The first memory device includes a fourth interface, the fourth interface coupled to the second interface. In some embodiments, the second interface is characterized by a first data rate, the third interface is characterized by a second data rate, and the second data rate is greater than the first data rate.

[0032] Embodiments may include one or more of the following features. The interposer may include a first interconnect, and the first interface may be coupled to a third interface via the first interconnect. The interposer may include a second interconnect, and the second interface may be coupled to a fourth interface via the second interconnect. The second circuit may further include a controller configured to manage data flow between the first memory device and the first circuit. The first memory device may further include a high bandwidth memory. The second interface may include a memory interface.

[0033] According to yet another embodiment, the present technology provides an apparatus including a substrate and a first circuit coupled to the substrate. The first circuit includes a first interface. The apparatus further includes a second circuit coupled to the first circuit. The second circuit includes a second interface and a third interface. The third interface is coupled to the first interface. The apparatus further includes a first memory device coupled to the second circuit. The first memory device includes a fourth interface, the fourth interface coupled to the second interface. In some embodiments, the second interface is characterized by a first data rate, the third interface is characterized by a second data rate, and the second data rate is greater than the first data rate.

[0034] Embodiments may include one or more of the following features. The apparatus may further include an interposer coupled between the substrate and the second circuit. The apparatus may further include a second memory device. The second memory device may be coupled to the second circuit. The second circuit may further include a fifth interface, and the second memory device includes a sixth interface coupled to the fifth interface. The second circuit may include a controller configured to manage a data flow between the first memory device and the first circuit. The ratio of the second data rate to the first data rate may be greater than 5:1.

[0035] Figure 1 1 is a simplified diagram illustrating a semiconductor device 100 featuring an integrated solution according to an embodiment of the present technology. This diagram is merely an example, which should not unduly limit the scope of the claims. A person of ordinary skill in the art will recognize many variations, substitutions, and modifications. Figure 1 The semiconductor device 100 illustrated in 1 includes a circuit 106 (e.g., the first circuit described in claim 1). As an example, for example, the circuit 106 is used as a main computing die configured for various computing tasks, data transactions, and processing activities, including (but not limited to) digital signal processing, image processing, network data routing, machine learning, and / or any application requiring specific computing requirements. In various embodiments, the circuit 106 may be implemented in a system-on-chip (SoC) arrangement. The term "system-on-a-chip" or "system-on-chip" refers to an integrated circuit that combines multiple functional components of a computer or other electronic system onto a single chip. For example, the circuit 106 may include an application-specific integrated circuit (ASIC), a central processing unit (CPU), a memory interface, an input / output device, an input / output interface, an auxiliary storage interface, and / or the like.

[0036] In some embodiments, the circuit 106 includes an interface 108 (e.g., the first interface described in claim 1). As an example, the term "interface" may refer to a shared boundary or interaction point across which two or more independent components of a computer system communicate, transmit signals, power, or data. The interface may be a physical interface and / or a logical interface based on various industry standards, including (but not limited to) double data rate (DDR), high bandwidth memory (HBM), hybrid memory cube (HMC), serial memory interface (SMI), coherent accelerator processor interface (CAPI), and / or the like. For example, the interface 108 includes a die-to-die interface that can be configured to connect and interact with other components of the semiconductor 100. The term "die" or "semiconductor die" may refer to a piece or section of semiconductor material (e.g., silicon) containing an integrated circuit system. This integrated circuit system may include various electronic components that together perform specific electronic functions, such as transistors, capacitors, resistors, and other microelectronic structures. The term "die-to-die interface" refers to a functional block that provides a data interface between two or more dies. The die-to-die interface may be implemented as a short channel for connecting two dies inside a package to achieve power efficiency and high bandwidth efficiency. The die-to-die interface may include a physical interface and / or a logical interface that provides a seamless connection between the two dies. The die-to-die interface may be implemented using a high-speed SerDes architecture or a high-density parallel architecture that is optimized to support a variety of advanced 2D, 2.5D, and 3D packaging technologies.

[0037] In various embodiments, the interface 108 may be configured to support high data rates. The term "data rate" or "data transfer rate" refers to the speed at which data can be transferred between two or more electronic components. The data rate of a semiconductor die can be measured in units of gigabits per second (Gbps) or terabits per second (Tbps). The data rate of a semiconductor die may be associated with various factors, including, but not limited to, the number of pins on the die, the clock speed of the interface, the signal-to-noise ratio, and the type of interface used. For example, the interface 108 is characterized by a data rate greater than 256 Gbps to enhance the bandwidth and system processing capabilities of data-intensive applications.

[0038] According to some embodiments, the semiconductor device 100 may further include a memory device 118 (e.g., the first memory device described in claim 1). The term "memory device" may refer to an electronic chip or integrated circuit configured to store, retain, and facilitate data retrieval. In some cases, the semiconductor 100 further includes a memory device 122 (e.g., the second memory device described in the claims). For example, the memory device 118 and / or the memory device 122 may include, but are not limited to, a high bandwidth memory (HBM), a dynamic random access memory (DRAM), a static random access memory (SRAM), a flash memory, a phase change memory (PCM), a magnetoresistive random access memory (MRAM), an electrically erasable programmable read-only memory (EEPROM), and / or the like. As an example, the memory device 118 includes a high bandwidth memory (HBM). The term "high bandwidth memory" or "HBM" may refer to a high-speed random access memory interface designed for high-performance applications (e.g., graphics cards, high-performance computing, machine learning, and / or the like).

[0039] Depending on the implementation, the memory device 118 may include an interface 116 (e.g., the fourth interface described in claim 1) that may be configured to connect and interact with other components of the semiconductor 100. In some cases, the memory device 122 includes an interface 124 (e.g., the sixth interface described in the claims) that may be configured to be coupled to the circuit 100. For example, the circuit 110 further includes an interface 126 (e.g., the fifth interface described in the claims). The interface 124 may be coupled to the interface 126. The interface 116 and / or the interface 124 may include (but not limited to) a double data rate (DDR), a high bandwidth memory (HBM), a hybrid memory cube (HMC), a serial memory interface (SMI), a coherent accelerator processor interface (CAPI), and / or the like. As an example, the interface 116 includes an HBM interface. The term "HBM interface" may refer to a high-speed memory interface customized for an HBM chip. It facilitates stacked die memory configurations, which are expected to increase bandwidth and data transfer rates while saving power.

[0040] In various implementations, the memory device 118 may be coupled to the circuit 106 via the circuit 110 (e.g., the second circuit described in claim 1). The circuit 110 may be configured to bridge the connection between the circuit 106 and the memory device 118, ensuring smooth and efficient data communication. Its architecture may be tailored to expertly translate, route, and buffer data transfers, facilitating synchronous communication between components. This is important when the components involved (e.g., the circuit 106 and the memory device 118) are designed to function based on different operating speeds or set industry standards.

[0041] As an example, the circuit 110 includes an interface 120 (eg, the third interface described in claim 1) and an interface 114.

[0042] (e.g., the second interface described in claim 1). Interface 120 may be coupled to interface 108 of circuit 106. Interface 114 may be coupled to interface 116 of memory device 118. These interfaces enable bidirectional data transmission and may be equipped with advanced capabilities, including (but not limited to) error mitigation, signal conditioning, and / or synchronization features. Depending on the implementation, these interfaces may be characterized by different data rates. For example, interface 116 and interface 114 may be characterized by a first data rate; interface 108 and interface 120 may be characterized by a second data rate. The second data rate may be greater than the first data rate. In some cases, the ratio of the second data rate to the first data rate is greater than 5:1.

[0043] In some embodiments, semiconductor device 100 further includes controller 112. For example, the term "controller" refers to a digital circuit that manages the flow of data into and out of a memory device (e.g., memory device 118). Depending on the implementation, the controller may be integrated into the memory device itself, or implemented as a separate chip. The memory controller is responsible for managing the interface between the memory device and other components of semiconductor device 100 (e.g., circuit 106). As an example,

[0044] Circuit 110 includes a controller 112 configured to manage data flow between a memory device 118 and circuit 106 .

[0045] It should be appreciated that the ability of circuit 110 to adapt features to one or more interfaces of different data rates provides several benefits. This dynamic adaptability ensures that while one interface is being carefully refined to meet the stringent data transfer and computational requirements of an ultra-fast chip (e.g., circuit 106), another interface can be coordinated to synchronize with components that require lower data rates (e.g., memory device 118). In addition, by incorporating interfaces optimized for increased data rates, circuit 110 effectively breaks the spatial constraints on circuit 106 and memory device 118. In addition, this configuration allows semiconductor device 100 to effectively manage extended routing lengths while ensuring signal integrity. This capability provides unprecedented flexibility in chip layout, such that various components (e.g., circuit 106 and memory device 118) are no longer constrained by physical proximity and can be positioned to optimize other factors (such as heat dissipation or component interaction).

[0046] In some embodiments, connections among components of semiconductor device 100 may be established through interposer 104, which may be used as a bridging substrate to ensure high-fidelity data exchange across semiconductor device 100. The term "interposer" may refer to an electrical interface that redirects electrical connections between electrical components, which may extend the connection to a wider spacing or rewire the connection to a different connection. For example, interposer 104 may include a substrate that facilitates electrical connections among multiple components using one or more interconnects, allowing high-speed data transfer and compact semiconductor integration. As an example, circuit 106 and / or circuit 110 may be coupled to interposer 104. Memory device 118 may be coupled to interposer 104. Connections among circuit 106, circuit 110, and memory device 118 may be established through interposer 104 using one or more interconnects.

[0047] In some embodiments, semiconductor device 100 further includes a substrate 102 coupled to an interposer 104. As an example, substrate 102 may be used as a base material for mounting and / or interconnecting active and passive components such as transistors, diodes, interposers, and integrated circuits. For example, substrate 102 may be made of a material that is an insulator or a low-resistivity conductor such as ceramic, silicon, or fiberglass.

[0048] Figure 2 2 is a simplified diagram illustrating a cross-sectional view of a semiconductor device 200 featuring an integrated scheme according to an embodiment of the present technology. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art will recognize many variations, substitutions, and modifications.

[0049] like Figure 2The semiconductor device 200 illustrated in FIG. 1 includes a substrate 202, an interposer 204, a circuit 206, a circuit 208, and a memory device 210. In some embodiments, the circuit 208 (e.g., the second circuit described in claim 1) may be coupled to the circuit 206 (e.g., the first circuit described in claim 1). For example, the circuit 206 may include an application specific integrated circuit (ASIC), a central processing unit (CPU), a memory interface, an input / output device, an input / output interface, an auxiliary storage interface, and / or the like. The interposer 204 may be coupled to the circuit 208 and / or the circuit 206. The memory device 210 (e.g., the first memory device described in claim 1) may be coupled to the interposer 204. The substrate 202 may be coupled to the interposer 204. The interposer 204 may include a substrate that facilitates electrical connections among multiple components using one or more interconnects, allowing high-speed data transfer and compact semiconductor integration. The substrate 202 may be used as a base material for mounting and / or interconnecting active and passive components (e.g., transistors, diodes, interposers, and integrated circuits). Circuit 208 may be configured to bridge the connection between circuit 206 and memory device 210, ensuring smooth and efficient data communication.

[0050] As previously mentioned, interposer 204 can be configured to provide electrical connections for components of semiconductor device 200. In various implementations, interposer 204 includes interconnect 212 (e.g., a first interconnect described in the claims) and interconnect 214 (e.g., a second interconnect described in the claims). Circuit 206 can be coupled to circuit 208 via interconnect 212. For example, an interface of circuit 206 (e.g., Figure 1 Interface 108 of circuit 208) is coupled to an interface of circuit 208 via interconnect 212 (e.g., Figure 1 120). The memory device 210 may be coupled to the circuit 208 via the interconnect 214. For example, the interface of the memory device 210 (e.g., Figure 1 The interface 116 of the circuit 208 may be coupled to an interface (eg, Figure 1 The interface 114 of FIG. 11A ). Interconnects 212 and 214 may include, but are not limited to, metal traces, vias, and / or other conductive materials and structures. The term "interconnect" may refer to an electrical structure that establishes an electrical pathway between different components or sections of a semiconductor device, allowing data, signal, and / or power transmission. Interfaces that support high data rates (e.g., greater than 256 Gbps) can manage extended routing lengths, which allows unprecedented spatial freedom and fast data exchange, thereby improving overall system performance and design flexibility.

[0051] Figure 33 is a simplified diagram illustrating a semiconductor device 300 featuring an integrated scheme according to an embodiment of the present technology. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art will recognize many variations, substitutions, and modifications.

[0052] As shown, semiconductor device 300 may include substrate 302, interposer 304, circuit 306, circuit 310, and memory device 318. In various implementations, circuit 306 (e.g., the first circuit described in claim 1) includes interface 308 (e.g., the first interface described in claim 1). Circuit 306 may include an application specific integrated circuit (ASIC), a central processing unit (CPU), a memory interface, an input / output device, an input / output interface, an auxiliary storage interface, and / or the like. Interface 308 may be a physical interface and / or a logical interface based on various industry standards, including (but not limited to) double data rate (DDR), high bandwidth memory (HBM), hybrid memory cube (HMC), serial memory interface (SMI), coherent accelerator processor interface (CAPI), and / or the like. For example, interface 308 includes a die-to-die interface that can be configured to connect and interact with other components of semiconductor 300.

[0053] In some embodiments, the semiconductor device 300 may further include a memory device 318 (e.g., the first memory device described in claim 1). For example, the memory device 318 includes, but is not limited to, a high bandwidth memory (HBM), a dynamic random access memory (DRAM), a static random access memory (SRAM), a flash memory, a phase change memory (PCM), a magnetoresistive random access memory (MRAM), an electrically erasable programmable read-only memory (EEPROM), and / or the like. In various examples, the memory device 318 may include an interface 316 (e.g., the fourth interface described in claim 1) that may be configured to connect and interact with other components of the semiconductor 300. The interface 316 may include, but is not limited to, a double data rate (DDR), a high bandwidth memory (HBM), a hybrid memory cube (HMC), a serial memory interface (SMI), a coherent accelerator processor interface (CAPI), and / or the like. As an example, the interface 316 includes an HBM interface.

[0054] In various implementations, memory device 318 may be coupled to circuit 306 via circuit 310 (e.g., the second circuit described in claim 1). Circuit 310 may be configured to bridge the connection between circuit 306 and memory device 318, ensuring smooth and efficient data communication. Its architecture may be tailored to expertly translate, route, and buffer data transfers, facilitating synchronous communication between components. This is important when the components involved (e.g., circuit 306 and memory device 318) are designed to function based on different operating speeds or set industry standards.

[0055] As an example, circuit 310 includes interface 320 (e.g., the third interface described in claim 1) and interface 314 (e.g., the second interface described in claim 1). Interface 320 can be coupled to interface 308 of circuit 306. Interface 314 can be coupled to interface 316 of memory device 318. These interfaces enable bidirectional data transmission and can be equipped with advanced capabilities, including (but not limited to) error mitigation, signal conditioning, and / or synchronization features. Depending on the implementation, these interfaces can be characterized by different data rates. For example, interface 316 and interface 314 can be characterized by a first data rate; interface 308 and interface 320 can be characterized by a second data rate. The second data rate can be greater than the first data rate. In some cases, the ratio of the second data rate to the first data rate is greater than 5:1 or even higher.

[0056] Depending on the implementation, both interposer 304 and substrate 302 may be configured to establish connections across semiconductor 302. Interposer 304 may include a substrate that facilitates electrical connections among multiple components using one or more interconnects, allowing high-speed data transfer and compact semiconductor integration. Substrate 302 may be used as a base material for mounting and / or interconnecting active and passive components such as transistors, diodes, interposers, and integrated circuits. For example, substrate 302 may be made of a material that is an insulator or a low-resistivity conductor such as ceramic, silicon, or fiberglass. As an example, circuit 306 may be coupled to substrate 302. Circuit 310 may be coupled to interposer 304. Memory device 318 may be coupled to interposer 304. In some cases, interface 320 may be extended to press into substrate 302. For example, interface 320 may be coupled to interface 308 through interconnect 322. Interconnect 322 may be configured to transmit data between components such as circuit 306 and circuit 308. For example, the interconnect 322 includes, but is not limited to, wires, cables, connectors, and / or the like.

[0057] In certain embodiments, semiconductor device 300 further includes a controller 312. The controller may be configured to manage the interface between a memory device (e.g., memory device 318) and other components of semiconductor device 300 (e.g., circuit 306). Depending on the implementation, the controller may be integrated into the memory device itself or implemented as a separate chip. As an example, circuit 310 includes a controller 312 configured to manage the data flow between memory device 318 and circuit 306.

[0058] Figure 4 4 is a simplified diagram illustrating a semiconductor device 400 featuring an integrated scheme according to an embodiment of the present technology. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art will recognize many variations, substitutions, and modifications.

[0059] like Figure 4 4. The semiconductor device 400 illustrated in FIG. 4 includes a substrate 402, an interposer 404, a circuit 406, a circuit 408, and a memory device 410. For example, the circuit 406 may include an application specific integrated circuit (ASIC), a central processing unit (CPU), a memory interface, an input / output device, an input / output interface, an auxiliary storage interface, and / or the like. In some embodiments, the circuit 408 may be coupled to the circuit 406 via an interconnect 412. The circuit 408 may be coupled to the memory device 410 via an interconnect 414. For example, the interconnects 412 and the interconnects 414 may include, but are not limited to, metal traces, vias, and / or other conductive materials and structures.

[0060] In various implementations, substrate 402 may be coupled to interposer 404. Interposer 404 may include a substrate that facilitates electrical connections among multiple components using one or more interconnects, allowing high-speed data transfer and compact semiconductor integration. Substrate 402 may be used as a base material for mounting and / or interconnecting active and passive components such as transistors, diodes, interposers, and integrated circuits. In some embodiments, circuit 406 may be coupled to substrate 402. Interposer 404 may be coupled to circuit 408 and memory device 410. Interfaces of circuit 408 (e.g., Figure 3 The interface 320 of the circuit 406 can be extended to be pressed into the substrate 402. It should be appreciated that the direct coupling between the circuit 406 and the substrate 402 effectively reduces the space occupied by the interposer 404, resulting in a direct reduction in production costs, which is particularly beneficial for large-scale manufacturing. In addition, the compact design provides enhanced layout flexibility, potentially allowing the integration of additional components or implementation modifications, helping to optimize thermal management and overall system efficiency.

[0061] Although the above is a complete description of specific embodiments, various modifications, alternative constructions and equivalents may be used. Therefore, the above description and illustrations should not be taken as limiting the scope of the present technology as defined by the appended claims.

Claims

1. A device comprising: A first circuit comprising a first interface; A second circuit coupled to the first circuit, the second circuit comprising a second interface and a third interface, the third interface coupled to the first interface; an interposer coupled to the second circuit; and a first memory device coupled to the interposer, the first memory device comprising a fourth interface coupled to the second interface; The second interface is characterized by a first data rate, the third interface is characterized by a second data rate, and the second data rate is greater than the first data rate. 2 . The apparatus of claim 1 , further comprising a substrate coupled to the interposer. The apparatus of claim 2 , wherein the first circuit is coupled to the substrate. 4 . The apparatus of claim 1 , wherein the interposer comprises a first interconnect, and the first interface is coupled to the third interface through the first interconnect. 5 . The apparatus of claim 1 , wherein the interposer comprises a second interconnect, and the second interface is coupled to the fourth interface through the second interconnect.

6. The apparatus of claim 1, wherein the second circuit further comprises a controller configured to manage data flow between the first memory device and the first circuit.

7. The apparatus of claim 1, wherein the first memory device may further comprise a high bandwidth memory.

8. The apparatus of claim 1, wherein a ratio of the second data rate to the first data rate is greater than 5:

1.

9. A device comprising: substrate; an interposer coupled to the substrate; a first circuit coupled to the interposer, the first circuit comprising a first interface; A second circuit coupled to the interposer, the second circuit comprising a second interface and a third interface, the third interface coupled to the first interface; and a first memory device coupled to the interposer, the first memory device comprising a fourth interface coupled to the second interface; The second interface is characterized by a first data rate, the third interface is characterized by a second data rate, and the second data rate is greater than the first data rate.

10. The apparatus of claim 9, wherein the interposer comprises a first interconnect, and the first interface is coupled to the third interface through the first interconnect.

11. The apparatus of claim 9, wherein the interposer comprises a second interconnect, and the second interface is coupled to the fourth interface through the second interconnect.

12. The apparatus of claim 9, wherein the second circuit further comprises a controller configured to manage data flow between the first memory device and the first circuit.

13. The apparatus of claim 9, wherein the first memory device further comprises a high bandwidth memory.

14. The apparatus of claim 9, wherein a ratio of the second data rate to the first data rate is greater than 5:

1.

15. An apparatus comprising: substrate; a first circuit coupled to the substrate, the first circuit comprising a first interface; A second circuit coupled to the first circuit, the second circuit comprising a second interface and a third interface, the third interface coupled to the first interface; and a first memory device coupled to the second circuit, the first memory device comprising a fourth interface coupled to the second interface; The second interface is characterized by a first data rate, the third interface is characterized by a second data rate, and the second data rate is greater than the first data rate.

16. The apparatus of claim 15, further comprising an interposer coupled between the substrate and the second circuit.

17. The apparatus of claim 15, further comprising a second memory device coupled to the second circuit.

18. The apparatus of claim 17, wherein the second circuit further comprises a fifth interface, and the second memory device comprises a sixth interface coupled to the fifth interface.

19. The apparatus of claim 15, wherein the second circuit comprises a controller configured to manage data flow between the first memory device and the first circuit.

20. The apparatus of claim 15, wherein a ratio of the second data rate to the first data rate is greater than 5:1.

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