Substrate processing apparatus and dielectric plate replacement method

Abstract

The invention provides a substrate processing apparatus and a dielectric plate replacement method. The apparatus for processing a substrate may include: a housing having a processing space; a chuck supporting the substrate in the processing space; a susceptor plate located at an upper portion in the processing space; a dielectric plate facing an upper surface of the substrate in the processing space and detachably provided on the susceptor plate; an upper edge electrode surrounding the dielectric plate; a lower edge electrode facing the upper edge electrode and surrounding the chuck; a dielectric plate alignment jig that adjusts a mounting position of an unused dielectric plate to coincide with a mounting position of a dielectric plate when a dielectric plate is replaced with the unused dielectric plate, the dielectric plate alignment jig including: a jig body having a shape surrounding the dielectric plate when viewed from above; and distance detection members that detect a distance between the jig body and the dielectric plate, at least three or more distance detection members being provided at different positions from each other in a peripheral direction of the jig body.

Description

Technical Field

[0001] The present invention relates to a substrate processing device and a substrate processing method, and more particularly to a device for processing a substrate by replacing a dielectric plate and a method for replacing the dielectric plate used in the device. Background Art

[0002] Plasma refers to an ionized gas state composed of ions or free radicals and electrons, which is generated by very high temperature or strong electric field or high-frequency electromagnetic field (RF Electromagnetic Fields). The semiconductor device manufacturing process includes an ashing or etching process that uses plasma to remove the film on the substrate. The ashing or etching process is performed by the collision or reaction of the ions and free radical particles contained in the plasma with the film on the substrate. The process of processing the substrate using plasma is performed in various ways. Among them, the bevel etching device that processes the bevel area in the edge area of ​​the substrate as the area where the semiconductor device is not manufactured removes the film in the bevel area of ​​the substrate by transferring plasma to the bevel area of ​​the substrate.

[0003] Generally speaking, the bevel etching device has a dielectric plate facing the substrate on the upper part of a chuck on which the substrate is placed. A lower edge electrode provided in a manner surrounding the periphery of the chuck and an upper edge electrode surrounding the periphery of the dielectric plate are additionally provided. The plasma generated between the upper edge electrode and the lower edge electrode is used to remove the film remaining in the bevel region of the substrate. In order to prevent the thin film from being etched in the central region of the substrate, the dielectric plate is provided adjacent to the substrate. This prevents the generation of plasma between the dielectric plate and the substrate and prevents the plasma generated in the bevel region of the substrate from flowing into the central region of the substrate.

[0004] The dielectric plate is etched by plasma during the process and may be contaminated by byproducts generated during the process. A damaged and contaminated dielectric plate may affect the process. Therefore, it must be replaced.

[0005] In the bevel etching device, the dielectric plate needs to be accurately installed at a preset position. When the dielectric plate is installed away from the preset position, the etching width in the bevel region of the substrate will change along the peripheral direction of the substrate.

[0006] Generally speaking, when the dielectric plate is replaced, the position of the dielectric plate is adjusted. When the position of the dielectric plate is adjusted, a bevel etching process is performed on the substrate, and the etching width is checked at the bevel area of ​​the substrate after the process. Then, the position of the dielectric plate is adjusted based on the inspection result. Since a series of processes as described above are accompanied when the dielectric plate is replaced, it will take a considerable time. Summary of the invention

[0007] Problem that the invention aims to solve

[0008] An object of the present invention is to provide a substrate processing apparatus capable of efficiently processing a substrate and a method for replacing a dielectric plate provided in the apparatus.

[0009] An object of the present invention is to provide a substrate processing apparatus and a method for replacing a dielectric plate used in the apparatus, wherein when replacing and installing a dielectric plate, the installation position of the new dielectric plate can be located at the same position as the installation position of the existing dielectric plate.

[0010] The problems to be solved by the present invention are not limited to the above-mentioned problems, and those skilled in the art can clearly understand the problems not mentioned from this specification and the attached drawings.

[0011] Means used to solve problems

[0012] The present invention provides a device for processing a substrate. The device for processing a substrate may include: a housing having a processing space; a chuck supporting a substrate in the processing space; a base plate located at an upper portion in the processing space; a dielectric plate facing an upper surface of a substrate supported by the chuck in the processing space and provided on the base plate in a detachable manner; an upper edge electrode provided in a manner of surrounding the dielectric plate; a lower edge electrode facing the upper edge electrode and provided in a manner of surrounding the chuck; and a dielectric plate alignment jig for adjusting the mounting position of the unused dielectric plate to coincide with the mounting position of the dielectric plate when the dielectric plate is replaced with an unused dielectric plate, the dielectric plate alignment jig including: a jig body having a shape surrounding the dielectric plate when viewed from above; and a distance detection member for detecting the distance between the jig body and the dielectric plate, the distance detection members being provided in at least three different positions along the peripheral direction of the jig body.

[0013] According to an embodiment, the clamp body may be detachably provided on the base plate.

[0014] According to an embodiment, the upper edge electrode is detachably provided on the base plate.

[0015] According to an embodiment, the dielectric plate alignment jig may be provided by being coupled to the base plate at a position where the upper edge electrode is mounted on the base plate in a state where the upper edge electrode is removed from the base plate.

[0016] According to an embodiment, a bonding member bonding the upper edge electrode to the base plate and a bonding member bonding the dielectric plate alignment jig to the base plate may be the same bonding member.

[0017] According to an embodiment, the distance detecting member may include a contact sensor.

[0018] According to one embodiment, the contact sensor may include: a moving pin coupled to a reference position on the fixture body in a manner capable of advancing or retreating in a direction toward the dielectric plate; and a detection unit that detects a distance from the moving pin to a contact position with the dielectric plate when the moving pin moves forward from the reference position toward the dielectric plate.

[0019] According to an embodiment, the moving pin may further include a contact portion at a front end portion thereof, through which the moving pin contacts the dielectric plate at the contact position, and the contact portion is provided by a material having a lower strength than that of the dielectric plate.

[0020] According to an embodiment, four touch sensors may be provided at equal intervals on the jig body.

[0021] Furthermore, the present invention provides a method for replacing a dielectric plate provided on a substrate processing device. According to one embodiment, the method replaces the dielectric plate with an unused dielectric plate in a substrate processing device, and the substrate processing device includes: a housing having a processing space; a chuck that supports a substrate in the processing space; a base plate that is located at an upper portion in the processing space; a dielectric plate that faces an upper surface of a substrate supported by the chuck in the processing space and is detachably provided on the base plate; an upper edge electrode that is provided in a manner of surrounding the dielectric plate and is detachably provided on the base plate; a lower edge electrode that faces the upper edge electrode; and a dielectric plate alignment jig that aligns the unused dielectric plate when the dielectric plate is replaced with the unused dielectric plate. The installation position of the dielectric plate is adjusted to be consistent with the installation position of the dielectric plate, and the method may include: an installation step of setting the clamp body on the base plate so that the clamp body of the dielectric plate alignment clamp surrounds the dielectric plate; a measuring step of measuring the distance between the alignment clamp and the dielectric plate at multiple locations of the alignment clamp; a step of removing the dielectric plate from the base plate; a step of locating an unused dielectric plate on the base plate; an adjustment step of adjusting the position of the unused dielectric plate relative to the base plate according to the distance measured in the measuring step; and a fixing step of fixing the unused dielectric plate on the base plate.

[0022] According to an embodiment, the mounting step may include: a step of removing the upper edge electrode from the base plate; and a step of providing the dielectric plate alignment jig at a position of the base plate where the upper edge electrode is bonded.

[0023] According to one embodiment, the measuring step may include: a moving step of moving movable pins provided on the jig body of the alignment jig from reference positions to contact positions where the movable pins contact the dielectric plate; and a step of measuring a moving distance from the reference position to the contact position for each of the movable pins.

[0024] According to an embodiment, the adjusting step may include the step of moving the moving pin forward from the reference position by the moving distance in a state where the unused dielectric plate is surrounded by the alignment jig.

[0025] According to an embodiment, the method may further include: removing the dielectric plate alignment jig; and rebonding the removed upper edge electrode to the base plate.

[0026] Furthermore, the present invention provides a method for replacing a dielectric plate. The method replaces the dielectric plate with an unused dielectric plate in a substrate processing device, wherein the substrate processing device includes: a housing having a processing space; a chuck supporting a substrate in the processing space; a base plate located at an upper portion in the processing space; a dielectric plate facing an upper surface of a substrate supported by the chuck in the processing space and detachably provided on the base plate; an upper edge electrode provided in a manner of surrounding the dielectric plate and detachably provided on the base plate; a lower edge electrode facing the upper edge electrode; and a dielectric plate alignment jig, which adjusts the installation position of the unused dielectric plate to be consistent with the installation position of the dielectric plate when the dielectric plate is replaced with an unused dielectric plate, and the method may include: a step of opening the housing; The steps of removing the upper edge electrode from the base plate; setting the dielectric plate alignment fixture at the position of the base plate where the upper edge electrode is combined; measuring the distance between the dielectric plate alignment fixture and the dielectric plate at multiple locations of the dielectric plate alignment fixture; removing the dielectric plate from the base plate; positioning an unused dielectric plate on the base plate; adjusting the position of the unused dielectric plate so that the distance between the unused dielectric plate and the plurality of movable pins reaches the distance measured in the measuring step; fixing the unused dielectric plate to the base plate; removing the dielectric plate alignment fixture from the base plate; and re-bonding the upper edge electrode to the base plate.

[0027] Effects of the Invention

[0028] According to the embodiment of the present invention, when etching the edge region of the substrate, the thin film can be etched with a predetermined width along the peripheral direction of the substrate.

[0029] According to the embodiment of the present invention, when a new dielectric plate is installed in a device, it can be positioned accurately at the same position as the installation position of the existing dielectric plate.

[0030] The effects of the present invention are not limited to the above-mentioned effects, and those skilled in the art in the art to which the present invention pertains can clearly understand the effects not mentioned from this specification and the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The various features and advantages of the non-limiting embodiments of the present specification can be more clearly understood by examining the attached drawings and detailed description. The attached drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. Unless expressly mentioned, the attached drawings are not considered to be drawn accordingly to scale. For clarity of illustration, various dimensions in the drawings may be exaggerated.

[0032] Figure 1 FIG. 1 is a cross-sectional view showing an embodiment of a substrate processing apparatus according to an embodiment of the present invention.

[0033] Figure 2 It is a perspective view schematically showing an embodiment of a dielectric plate replacement jig.

[0034] Figure 3 It is a schematic diagram Figure 2 FIG. 1 is a diagram of an embodiment of a contact sensor provided on a dielectric plate replacement jig.

[0035] Figure 4 It is shown in Figure 1 A cross-sectional view of an embodiment of a substrate processing apparatus provided with a dielectric plate replacement jig to replace an upper edge electrode.

[0036] Figure 5 It is shown in Figure 1 Flowchart of the replacement procedure of the dielectric plate on the substrate processing device.

[0037] Figures 6 to 12 The following are views showing, in sequence, a process of replacing a dielectric plate according to an embodiment of the present invention.

[0038] Fig.13 Is shown in the unregulated Fig.10 FIG. 1 is a diagram showing the results of processing a substrate when directly bonding a dielectric plate.

[0039] Description of Reference Numerals

[0040] 400: dielectric plate replacement jig; 410: jig body; 420: distance detection member; 430: coupling member; 520: dielectric plate; 521: unused dielectric plate; 620: upper edge electrode; L1: mounting position; L2: deviated position; A1: reference position; A2: contact position DETAILED DESCRIPTION

[0041] The illustrative embodiments will be described more completely with reference to the attached drawings. The illustrative embodiments are provided to enable the present disclosure to be more thorough, thereby fully conveying its scope to those of ordinary skill in the art. In order to provide a complete understanding of the embodiments of the present disclosure, multiple specific details such as examples of specific structural elements, devices and methods will be prompted. It is clearly understood by those skilled in the art that specific details do not need to be utilized, and the illustrative embodiments can be implemented in many different forms, both of which should not be interpreted as limiting the scope of the present disclosure. In a portion of the illustrative embodiments, known processes, known device structures and known technologies will not be described in detail.

[0042] The terms used herein are only to illustrate specific illustrative embodiments, and are not intended to limit illustrative embodiments. Unless clearly indicated as different meanings in the context, expressions such as singular or expressions that do not expressly indicate singular plural numbers used herein are intended to include plural expressions. The terms "include", "comprise", "have", and "have" are open-ended meanings, and therefore, they are intended to specifically refer to the existence of features, structural elements (integers), steps, actions, elements, and / or structural elements, and do not exclude the existence or addition of more than one other features, structural elements, steps, actions, elements, structural elements, and / or their groups. Unless the order of execution is clearly indicated, the method steps, processes, and actions in this specification should not be interpreted as having to be performed in the specific order discussed or described. In addition, additional or alternative steps can be selected.

[0043] When an element or layer is referred to as being "above" other elements or layers, "connected", "combined", "fitted", "adjacent", or "covering" other elements or layers, it can mean that it is directly located on the other elements or layers, or connected or combined or fit or adjacent to the other elements or layers, or covers the other elements or layers, or there are intermediate elements or layers. Conversely, when an element is referred to as being "directly above" other elements or layers, "directly connected" or "directly combined" with other elements or layers, it should be understood that there are no intermediate elements or layers. Throughout the scope of the specification, the same reference numerals represent the same elements. The term "and / or" used in the present invention includes all combinations and sub-combinations of more than one of the listed items.

[0044] Although the terms first, second, third, etc. may be used to illustrate various elements, regions, layers, and / or sections in the present invention, it should be understood that the elements, regions, layers, and / or sections should not be limited by these terms. These terms are used only to distinguish any one element, region, layer, or section from other elements, regions, layers, or sections. Therefore, the first element, first region, first layer, or first section discussed below may be referred to as the second element, second region, second layer, or second section without departing from the teachings of the illustrative embodiments.

[0045] Spatially relative terms (e.g., "below," "under," "lower," "above," "upper end," etc.) may be used as shown in the figure to illustrate the relationship of one element or feature to other elements or features and for convenience of description. It should be understood that spatially relative terms are intended to include not only the orientation shown in the drawings, but also other orientations of the device in use or at work. For example, if the device in the drawings is turned over, the elements described as "below" or "below" other elements or features will be oriented "above" other elements or features. Therefore, the term "below" can include both above and below orientations. The device can be oriented differently (rotated 90 degrees or toward other orientations), and the spatially relative descriptive statements used in the present invention can be interpreted accordingly.

[0046] In the case where the terms "same" or "equal" are used in the description of the embodiments, it should be understood that there may be slight inaccuracies. Therefore, when it is mentioned that one element or value is the same as another element or value, it should be understood that the corresponding element or value is the same as the other element or value within a manufacturing or operating error (e.g., ±10%).

[0047] When the words "approximately" or "substantially" are used in this specification in relation to a numerical value, it should be understood that the numerical value includes a manufacturing or operating error (e.g., ±10%) of the numerical value mentioned. Also, when the words "generally" and "substantially" are used in relation to geometrical morphology, although the accuracy of the geometrical morphology is not required, it should be understood that the latitude related to the morphology is within the scope of the disclosure.

[0048] Unless defined differently, all terms (including technical and scientific terms) used in the present invention have the same meanings as those commonly understood by ordinary technicians in the technical field to which the illustrated embodiments belong. In addition, including terms defined in commonly used dictionaries, the terms of the present invention should be interpreted as having the same meaning as in the context of the relevant technology, and unless explicitly defined in the present invention, it should be understood that they will not be interpreted as ideal or overly formal meanings.

[0049] In this embodiment, a wafer is used as an example of an object to be processed. However, the technical concept of the present invention can also be applied to devices used for processing other types of substrates other than wafers.

[0050] The following reference Figures 1 to 13 Embodiments of the present invention are described in detail.

[0051] Figure 1 FIG. 2 is a cross-sectional view showing an embodiment of a substrate processing apparatus according to an embodiment of the present invention. Figure 1 The substrate processing device uses plasma to perform a specified process on the substrate W. As an example, the substrate processing device can etch or ash the film on the substrate W. The film can be a variety of film types such as a polysilicone film, a silica oxide film, and a silica nitride film. In addition, the film can be a natural oxide film or a chemically generated oxide film. In addition, the film can be a by-product (By-Product) generated during the process of processing the substrate W. In addition, the film can be impurities attached to and / or remaining on the substrate W. In addition, the film can be a metal film evaporated on the substrate.

[0052] The substrate processing apparatus may perform a plasma process on the substrate W. For example, the substrate processing apparatus may supply a process gas and generate plasma from the supplied process gas to process the substrate W. The substrate processing apparatus may supply a process gas and generate plasma from the supplied process gas to process an edge region of the substrate W. Hereinafter, the substrate processing apparatus is described as a bevel etching apparatus that performs an etching process on a bevel region of the substrate W.

[0053] The substrate processing apparatus may include a housing 100 , a support unit 300 , a dielectric plate unit 500 , an upper electrode unit 600 , a temperature adjusting unit 700 , a gas supply unit 800 , and a controller 900 .

[0054] The housing 100 may define an internal space 102. The housing 100 may include an upper housing (110, an example of a first housing) and a lower housing (120, an example of a second housing). The upper housing 110 and the lower housing 120 may be combined with each other to define the internal space 102. Furthermore, the upper housing 110 may be rotatably fastened relative to the lower housing 120 using a rotating joint (not shown) such as a hinge mechanism.

[0055] The upper housing 110 may be in an open position or in a closed position. The position of the upper housing 110 where the upper housing 110 and the lower housing 120 are combined to define the internal space 102 is referred to as a closed position, and the position of the upper housing 110 where the internal space 102 is exposed to the outside is defined as an open position.

[0056] Furthermore, the atmosphere of the internal space 102 is isolated from the outside when the upper housing 110 is in the closed position, and the internal space 102 isolated from the outside can be adjusted to a low pressure state close to vacuum (vacuum pressure atmosphere) during the processing of the substrate W. Furthermore, the housing 100 can be provided by a material including metal. Furthermore, the inner surface of the housing 100 can be coated with an insulating material. Furthermore, the housing 100 can be grounded.

[0057] Furthermore, the housing 100 may be a vacuum chamber. For example, an exhaust hole 104 may be formed on the bottom surface of the housing 100. The plasma generated in the internal space 102 or the gas supplied to the internal space 102 may be discharged to the outside through the exhaust hole 104. Furthermore, byproducts generated in the process of processing the substrate W using plasma may be discharged to the outside through the exhaust hole 104. Furthermore, the exhaust hole 104 may be connected to an exhaust line. The exhaust line may be connected to a decompression member (not shown) that provides decompression. The decompression member may provide decompression to the internal space 102 through the exhaust line.

[0058] The support unit 300 may support the substrate W in the inner space 102 . The support unit 300 may include a chuck 310 , a power supply member 320 , an insulating ring 330 , a lower edge electrode ( 350 , an example of a second edge electrode), and a driving member 370 .

[0059] The chuck 310 may support the substrate W in the inner space 102. The chuck 310 may have a supporting surface for supporting the substrate W. When viewed from above, the chuck 310 may have a circular shape. When viewed from above, the chuck 310 may have a smaller diameter than the substrate W. Thus, a central area of ​​the substrate W supported by the chuck 310 may be placed on the supporting surface of the chuck 310, while an edge area of ​​the substrate W does not contact the supporting surface of the chuck 310.

[0060] A heating unit (not shown) may be provided inside the chuck 310. The heating unit (not shown) may heat the chuck 310. The heating unit may be a heater. In addition, a cooling flow path 312 may be formed in the chuck 310. The cooling flow path 312 may be formed inside the chuck 310. A cooling fluid supply line 314 and a cooling fluid discharge line 316 may be connected to the cooling flow path 312. The cooling fluid supply line 314 may be connected to a cooling fluid supply source 318. The cooling fluid supply source 318 may store cooling fluid and / or supply cooling fluid to the cooling fluid supply line 314. In addition, the cooling fluid supplied to the cooling flow path 312 may be discharged to the outside through the cooling fluid discharge line 316. The cooling fluid stored and / or supplied by the cooling fluid supply source 318 may be cooling water or cooling gas. In addition, the structural element of the cooling chuck 310 is not limited to the structural element supplying the cooling fluid, but may also be provided as a variety of structural elements (e.g., cooling plates, etc.) capable of cooling the chuck 310.

[0061] The power supply component 320 can supply RF power to the chuck 310. The power supply component 320 can include: a power supply 322, a matching transformer 324, and a power line 326. The power supply 322 can be a bias power supply. And, the power supply 322 can be an RF power supply. The power supply 322 can be connected to the chuck 310 through the power line 326. And, the matching transformer 324 can be provided to the power line 326 to perform impedance matching.

[0062] When viewed from the top, the insulating ring 330 may be provided to have a ring shape. When viewed from the top, the insulating ring 330 may be provided to surround the chuck 310. For example, the insulating ring 330 may have a ring shape. The insulating ring 330 may be provided by a material having insulation.

[0063] When viewed from above, the lower edge electrode 350 may be configured to surround the insulating ring 330. When viewed from above, the lower edge electrode 350 may have a ring shape. The lower edge electrode 350 may be grounded. When viewed from above, the lower edge electrode 350 may be disposed at a lower portion of an edge region of the substrate W supported by the chuck 310. When viewed from above, the lower portion of the edge region of the substrate W may be a region overlapping with the edge region of the substrate W or a region not overlapping with the edge region of the substrate W.

[0064] The driving member 370 can make the chuck 310 rise and fall. The driving member 370 may include a driver 372 and a shaft 374. The shaft 374 may be combined with the chuck 310. The shaft 374 may be connected to the driver 372. The driver 372 can make the chuck 310 rise and fall in the up and down direction with the shaft 374 as a medium. By making the chuck 310 rise and fall by the driving member 370, the interval between the upper surface of the substrate W supported by the chuck 310 and the lower surface of the dielectric plate 520 can be adjusted.

[0065] The base plate includes a first base 510 and a second base 610. The first base 510 is provided on a dielectric plate unit 500 described later, and the second base 610 is provided on an upper electrode unit 600 described later.

[0066] The dielectric plate unit 500 may include a dielectric plate 520 and a first base 510. Also, the dielectric plate unit 500 may be combined with a temperature adjustment plate 710 to be described later.

[0067] The dielectric plate 520 may be configured such that its lower surface faces the upper surface of the chuck 310. The dielectric plate 520 may have a circular shape when viewed from above. Also, the lower surface of the dielectric plate 520 may be provided in a flat shape. Also, in the lower surface of the dielectric plate 520, the edge region may be formed in a stepped manner so that its height is higher than that of the central region. In the lower surface of the dielectric plate 520, by allowing the plasma described later to enter the region having the stepped region, the processing efficiency for the edge region of the substrate W can be improved.

[0068] The dielectric plate 520 may be arranged to face the upper surface of the substrate W supported by the support unit 300, specifically, the chuck 310, in the internal space 102. The dielectric plate 520 may be arranged on the upper part of the support unit 300. The dielectric plate 520 may be provided by a material including ceramics. A gas flow path connected to the first gas supply unit 810 of the gas supply unit 800 described later may be formed on the dielectric plate 520. In addition, the discharge end of the gas flow path may be configured so that the first gas supplied by the first gas supply unit 810 is supplied to the central area of ​​the substrate W supported by the support unit 300. In addition, the discharge end of the gas flow path may be configured so that the first gas is supplied to the upper surface of the central area of ​​the substrate W supported by the support unit 300.

[0069] The first base 510 may be disposed between the dielectric plate 520 and a temperature regulating plate 710 described later. The first base 510 may be coupled to the temperature regulating plate 710 described later, and the dielectric plate 520 may be coupled to the first base 510. Thus, the dielectric plate 520 may be coupled to the temperature regulating plate 710 via the first base 510.

[0070] In the direction from top to bottom, the diameter of the first base 510 may gradually increase. The diameter of the upper surface of the first base 510 may be smaller than the lower surface of the dielectric plate 520. The upper surface of the first base 510 may have a flat shape. And, the first base 510 may be provided by a material including metal. For example, the first base 510 may be provided by a material including aluminum. The first base 510 may be used to fix the position of the dielectric plate 520.

[0071] The upper electrode unit 600 may include a second base 610 and an upper edge electrode 620. When viewed from above, the upper edge electrode 620 may have a shape surrounding the dielectric plate 520. When viewed from above, the upper edge electrode 620 may have a ring shape. The upper edge electrode 620 may be provided to be separated from the dielectric plate 520. The upper edge electrode 620 may be separated from the dielectric plate 520 to form a separation space. The separation space may form a part of a gas channel for the flow of a second gas supplied by a second gas supply unit 830 described later. The discharge end of the gas channel may be configured to be able to supply the second gas to the edge region of the substrate W supported by the support unit 300. Furthermore, the discharge end of the gas channel may be configured to enable the second gas to be supplied to the upper surface of the edge region of the substrate W supported by the support unit 300.

[0072] When viewed from above, the upper edge electrode 620 may be disposed above the substrate W supported by the chuck 310. The upper edge electrode 620 may generate plasma at an edge region of the substrate W. The plasma may be generated from a process gas supplied from a gas supply unit 800 described later.

[0073] The second pedestal 610 may be disposed at a position higher than the chuck 310 and the substrate W supported by the chuck 310. The second pedestal 610 may fix the position of the upper edge electrode 620. The second pedestal 610 may be disposed between the upper edge electrode 620 and a temperature regulating plate 710 to be described later. The second pedestal 610 may be combined with the temperature regulating plate 710 to be described later, and the upper edge electrode 620 may be combined with the second pedestal 610. Thus, the upper edge electrode 620 may be combined with the temperature regulating plate 710 via the second pedestal 610.

[0074] When viewed from the top, the second base 610 may have a ring shape. The upper surface and the lower surface of the second base 610 may have a flat shape. When viewed from the top, the second base 610 may have a shape surrounding the first base 510. In the direction from top to bottom, the inner diameter of the second base 610 may gradually increase. The second base 610 may be provided to be separated from the first base 510. The second base 610 may be separated from the first base 510 to form a separation space. The separation space may form a part of the gas channel for the flow of the second gas supplied by the second gas supply unit 830 described later. In addition, the second base 610 may be provided by a material including a metal. For example, the second base 610 may be provided by a material including aluminum.

[0075] The temperature adjustment unit 700 may include: a temperature adjustment plate 710; and a fluid supply unit (not shown) that supplies cooling fluid to the temperature adjustment plate 710 and discharges the cooling fluid that has circulated in the temperature adjustment plate 710 and has a higher temperature.

[0076] The temperature regulating plate 710 may be combined with the dielectric plate unit 500 and the upper electrode unit 600. The temperature regulating plate 710 may be provided on the ceiling of the upper housing 110. The temperature regulating plate 710 may be configured such that when the upper housing 110 is located at a closed position defining the internal space 102, the temperature regulating plate 710 is disposed in the internal space 102. The temperature regulating plate 710 may prevent the temperature of the first base 510 and the second base 610 from becoming too high. For example, a flow path 712 for a cooling fluid described later to flow may be formed in the temperature regulating plate 710. The cooling fluid may be cooling water. Alternatively, the cooling fluid may be cooling gas.

[0077] According to an embodiment of the present invention, the first pedestal 510 is disposed between the dielectric plate 520 and the temperature regulating plate 710. The first pedestal 510 may be provided by a material different from that of the dielectric plate 520, and provided by the same material as that of the temperature regulating plate 710. That is, the thermal expansion coefficient of the first pedestal 510 may be closer to that of the temperature regulating plate 710 than that of the dielectric plate 520. That is, by disposing the first pedestal 510 between the dielectric plate 520 and the temperature regulating plate 710, it is possible to minimize the occurrence of misalignment between the temperature regulating plate 710 and the dielectric plate 520 due to heat or cold generated by the temperature regulating plate 710. This is because the first pedestal 510, which is in direct contact with the temperature regulating plate 710, is provided by a material similar to that of the temperature regulating plate 710.

[0078] Similarly, according to an embodiment of the present invention, the second pedestal 610 is disposed between the upper edge electrode 620 and the temperature regulating plate 710. The second pedestal 610 may be provided by a material different from that of the upper edge electrode 620 and provided by the same material as that of the temperature regulating plate 710. That is, the thermal expansion coefficient of the second pedestal 610 may be closer to that of the temperature regulating plate 710 than that of the upper edge electrode 620. That is, by disposing the second pedestal 610 between the upper edge electrode 620 and the temperature regulating plate 710, it is possible to minimize the occurrence of misalignment between the temperature regulating plate 710 and the upper edge electrode 620 due to heat or cold generated by the temperature regulating plate 710. This is because the second pedestal 610, which is in direct contact with the temperature regulating plate 710, is provided by a material similar to that of the temperature regulating plate 710.

[0079] The gas supply unit 800 may supply gas to the inner space 102. The gas supply unit 800 may supply the first gas and the second gas to the inner space 102. The gas supply unit 800 may include a first gas supply part 810 and a second gas supply part 830.

[0080] The first gas supply part 810 can supply the first gas to the internal space 102. The first gas can be an inert gas such as nitrogen. The first gas supply part 810 can supply the first gas to the central area of ​​the substrate W supported by the chuck 310. The first gas supply part 810 may include: a first gas supply source 812, a first gas supply line 814 and a first valve 816. The first gas supply source 812 can store and / or supply the first gas to the first gas supply line 814. The first gas supply line 814 can be connected to the flow path formed on the dielectric plate 520. The first valve 816 can be set in the first gas supply line 814. The first valve 816 can be provided as an on / off valve or a flow regulating valve. The first gas supplied by the first gas supply source 812 can be supplied to the central area of ​​the upper surface of the substrate W through the flow path formed on the dielectric plate 520.

[0081] The second gas supply part 830 can supply the second gas to the inner space 102. The second gas can be a process gas excited in a plasma state. The second gas supply part 830 can supply the second gas to the edge area of ​​the substrate W through a gas channel formed by separating the dielectric plate 520, the first pedestal 510, the upper edge electrode 620 and the second pedestal 610 from each other provided on the upper part of the edge area of ​​the substrate W supported by the chuck 310. The second gas supply part 830 may include: a second gas supply source 832, a second gas supply line 834 and a second valve 836. The second gas supply source 832 can store and / or supply the second gas to the second gas supply line 834. The second gas supply line 834 can supply the second gas as a separated space that acts as a gas channel. The second valve 836 can be provided in the second gas supply line 834. The second valve 836 can be provided as an on / off valve or a flow regulating valve. The second gas supplied by the second gas supply source 832 can be supplied to the edge area of ​​the upper surface of the substrate W through the gas channel.

[0082] The controller 900 may control the substrate processing device. The controller 900 may control the substrate processing device so that it can perform the plasma processing process performed below. For example, the controller 900 may control the gas supply unit 800, the temperature adjustment plate 710, and the support unit 300. For example, the controller 900 may control the support unit 300 and the gas supply unit 800 so that when the first gas supply part 810 and / or the second gas supply part 830 supply gas, the power supply 322 generates plasma in the edge area of ​​the substrate W supported by the chuck 310 by applying power to the chuck 310.

[0083] The controller 900 can control the substrate processing device so that it can execute the substrate processing method described below. In addition, the controller 900 can have a processing controller composed of a microprocessor (computer) that performs control of the substrate processing device, a user interface, and a storage unit, wherein the user interface is composed of a keyboard for inputting commands for an operator to manage the substrate processing device or a display that displays the operating status of the substrate processing device by visualizing the operation status of the substrate processing device, and the storage unit stores a processing method, that is, a control program for performing processing performed in the substrate processing device through the control of the processing controller, or a program for executing in each component according to various data and processing conditions. In addition, the user interface and the storage unit can be connected to the processing controller. The processing method can be stored in a storage medium in the storage unit, and the storage medium can be a hard disk, or a removable disk such as a CD-ROM, a DVD, or a semiconductor memory such as a flash memory.

[0084] Figure 21 is a perspective view schematically showing an embodiment of a dielectric plate replacement jig. Figure 2 , the dielectric plate replacement jig 400 has a jig body 410 and a distance detection member 420. The jig body 410 may have a ring shape. The jig body 410 is provided in a size that surrounds the dielectric plate 520 when mounted on the base plate. According to one example, the diameter of the jig body 410 may be provided in a size that is the same as or similar to the diameter of the upper edge electrode 620. The distance detection member 420 is mounted on the jig body 410. In a state where the dielectric plate replacement jig 400 is configured to surround the dielectric plate 520, the distance detection member 420 detects the distance from the reference position A1 described later to the dielectric plate 520. The distance detection member 420 may be provided in three or more. According to one example, the distance detection member 420 is provided in four. The distance detection member 420 may be provided at equal intervals along the outer peripheral direction of the body. For example, the distance detection member 420 has a first sensor 420a, a second sensor 420b, a third sensor 420c, and a fourth sensor 420d. When viewed from above, the first sensor 420a and the second sensor 420b are arranged on an arbitrary first straight line passing through the center of the jig body 410. When viewed from above, the third sensor 420c and the fourth sensor 420d are arranged on an arbitrary second straight line passing through the center of the jig body 410. The angle between the first straight line and the second straight line may be 90 degrees.

[0085] Figure 31 is a diagram schematically showing an embodiment of a distance detection member provided on a dielectric plate replacement jig. According to an embodiment, the distance detection member 420 may be a contact sensor. The contact sensor may include a moving pin 421 and a detection portion 422 for detecting the distance. The moving pin 421 may move forward or backward in a direction toward the center of the jig body 410. The moving pin 421 has a pin body 421a and a contact portion 421b. The contact sensor is mounted on the jig body 410 so that the length direction of the pin body 421a becomes the radial direction of the jig body 410. According to one example, a hole 411 is formed on the outer periphery of the jig body 410, and the pin body 421a may be connected by passing through the hole 411. The pin body 421a may be provided so as to move forward or backward by means of a rotational motion. According to one example, the pin body 421a may be rotated manually by an operator. Alternatively, the pin body 421a may be rotated electrically. When a preset pressure or more is applied to the pin body 421a, the pin body 421a may no longer rotate. Alternatively, when a set distance is reached, the pin body 421a may no longer rotate. The pin body 421a uses a rotational motion to move from the reference position A1 to the contact position A2. According to one example, the reference position A1 is the position when the moving pin 421 retreats to the maximum extent. The contact position A2 is the position where the moving pin 421 contacts the used dielectric plate 520 and no longer rotates. The detection unit 422 detects the distance that the moving pin 421 moves from the reference position A1 to the contact position A2. According to one example, a scale 422a may be marked on the outside of the detection unit 422, and a moving unit 422b that moves on the scale by a distance equivalent to the moving pin 421 moves. According to another example, the detection unit 422 may detect the distance electronically and store the detected distance. The contact unit 421b is located at the inner front end of the pin body 421a. The contact portion 421b is a portion where the pin body 421a advances and contacts the dielectric plate 520. The contact portion 421b may be provided by a material having a lower strength than the dielectric plate 520. According to one example, the contact portion 421b may be a rubber material. According to another example, it may be a plastic material. Alternatively, the front end of the contact portion 421b may be covered with a stretchable material 421c.

[0086] Figure 41 is a cross-sectional view schematically showing an embodiment of a dielectric plate replacement jig combined with a substrate processing apparatus. The jig body 410 is combined with the base plate using a combining member 430. According to one example, after the upper edge electrode 620 is removed from the base plate, the jig body 410 can be combined with the base plate at the same position as the installation position of the upper edge electrode 620. According to one example, the combining member (not shown) combining the upper edge electrode 620 with the base plate and the combining member 430 combining the jig body 410 with the base plate can be the same member. For example, the combining member 430 can be a bolt 431 and a threaded hole 432. According to one example, a threaded hole (not shown) is formed in the upper edge electrode 620, and a threaded hole is formed in the base plate corresponding to the position of the threaded hole of the upper edge electrode 620, and a bolt 431 can be combined in each threaded hole. Furthermore, when it is assumed that the jig body 410 and the upper edge electrode 620 are placed so as to overlap, the threaded hole 432 formed in the jig body 410 and the threaded hole formed in the upper edge electrode 620 completely overlap.

[0087] Figures 6 to 12 It is a diagram showing a state of replacing a dielectric plate using a dielectric plate replacement jig.

[0088] Reference Figure 5 The dielectric plate replacement method includes: step S10 of removing the upper edge electrode 620; step S20 of installing the dielectric plate replacement fixture 400; step S30 of detecting the distance between the dielectric plate 520 and the reference position A1; step S40 of removing the dielectric plate 520; step S50 of pre-fastening the unused dielectric plate 521 on the base plate; step S60 of adjusting the position of the unused dielectric plate 521; and step S70 of fixing the unused dielectric plate 521 on the base plate.

[0089] Reference Figure 6 The upper edge electrode 620 is detachably provided on the base plate. The upper edge electrode 620 is removed from the base plate.

[0090] Figure 7 4 is a cross-sectional view of a substrate processing apparatus provided with a dielectric plate replacement jig 400 according to an embodiment of the present invention. Figure 7 , the dielectric plate replacement jig 400 is coupled to the coupling position of the upper edge electrode 620. The moving pin 421 is located at the reference position A1.

[0091] Reference Figure 8, the distance detection member 420 in the dielectric plate replacement jig 400 detects the distance between the dielectric plate 520 and the reference position A1. The operator rotates the moving pin 421 so that the moving pin 421 moves toward the dielectric plate 520. The moving pin 421 moves forward and contacts the dielectric plate 520. The operator moves the moving pin 421 forward to the contact position A2 where the moving pin 421 no longer rotates. The detection unit 420 detects the distance moved from the reference position A1 to the contact position A2. The installation position L1 of the dielectric plate is detected by the distances detected by the plurality of detection units.

[0092] Reference Fig. 9 , the dielectric plate 520 is removed. To replace the dielectric plate 520, the movable pin 421 may be retreated to the reference position A1. Alternatively, the movable pin 421 may be retreated to any position between the reference position A1 and the contact position A2. The dielectric plate 520 is removed from the base plate.

[0093] Reference Fig.10 , the unused dielectric plate 521 is arranged on the base plate. The unused dielectric plate 521 is pre-fastened on the base plate. The pre-fastened unused dielectric plate 521 can be provided at a position L2 deviated from the mounting position L1. The pre-fastened unused dielectric plate 521 is provided so that its position can be adjusted from the deviated position L2 to the mounting position L1. A plurality of moving pins 421 advance a distance detected from each detection portion 420. The pre-fastened dielectric plate 520 can move together with the moving pins 421. For example, when the unused dielectric plate 521 is arranged to deviate from the moving path of any one of the moving pins 421, the pre-fastened unused dielectric plate 521 is pushed during the advancement of the moving pin 421. The moving pin 421 provided on the area opposite to the moving pin 421 does not move during the movement to the contact position A2. When the moving pin 421 moves to the contact position A2, the position of the dielectric plate 520 is adjusted at the portion where the moving pin 421 is provided.

[0094] Reference Fig.11 , the position of the unused dielectric plate 521 is adjusted and can be fixed to the base plate. The unused dielectric plate 521 will be located at the same position as the replaced dielectric plate 520.

[0095] Reference Fig.12 , the dielectric plate replacement jig 400 is removed from the base plate, and the upper edge electrode 620 is bonded again.

[0096] Fig.13 5 is a diagram showing the result of processing the substrate W without using a dielectric plate coupled to the base plate at a deviated position. When the mounting position of the dielectric plate 521 is changed, the area of ​​the substrate W to be etched can also be changed. Fig.12It can be seen that when the etching area E1 when the dielectric plate 521 is located at the installation position L1 is compared with the etching area E2 when the dielectric plate 521 is located at the deviated position L2, the etching area E2 deviates to one side by the size of the dielectric plate 521 deviating from the installation position L1. Therefore, after replacing the dielectric plate 520, it is necessary to confirm the etching area through the preliminary process and adjust the position of the dielectric plate 521 based on the result. The series of processes described above can be repeated until the position of the dielectric plate 521 reaches the installation position L1. The longer the repeated process is, the longer it may take until the device is used again. According to the embodiment of the present invention, even if the dielectric plate 520 is replaced, the unused dielectric plate 521 can be arranged so that it is located at the same position as the position L1 where the existing dielectric plate 520 is installed. Therefore, by directly using the device without the process of confirming the etching area and adjusting the position of the dielectric plate 521 through the preliminary process, the processing efficiency of the substrate W can be improved and the operation time can be reduced.

[0097] In the above example, although the upper edge electrode 620 or the dielectric plate alignment jig is coupled to the base plate by bolts, the present invention is not limited thereto. For example, the coupling may be performed by forming a protrusion and a recessed groove.

[0098] In the above example, although the upper surface of the dielectric plate 520 and the lower surface of the first base 510 are flat, the present invention is not limited thereto, and the lower surface of the first base 510 and the upper surface of the dielectric plate 520 may have shapes that can be combined with each other. For example, the upper surface of the dielectric plate 520 is formed in a stepped manner so that the height of the central region is higher than the height of the edge region, and the lower surface of the edge region of the first base 510 is formed in a stepped manner so that the height is lower than the lower surface of the central region, so that the central region of the dielectric plate 520 can be inserted into the central region of the first base 510.

[0099] In the above example, although the distance detection member 420 is provided as a contact sensor, the present invention is not limited thereto and may be provided as an optical sensor, for example.

[0100] In the above example, the position of the dielectric plate 521 is adjusted by the moving pin 421 of the contact sensor, but the present invention is not limited thereto. For example, an optical sensor may be used and the position may be adjusted manually by an operator.

[0101] In the above example, although the chuck 310 is moved in the vertical direction and the positions of the dielectric plate 520 and the upper edge electrode 620 are fixed, the present invention is not limited thereto. For example, the position of the chuck 310 may be fixed and the dielectric plate 520 may be moved in the vertical direction. Furthermore, the chuck 310 and the dielectric plate 520 may both be moved in the vertical direction.

[0102] In the above example, although the contact portion is covered with a rubber or plastic material protective tape at the front end of the moving pin 421, the present invention is not limited thereto. For example, a component made of an additional rubber or plastic material may be combined at the front end of the moving pin 421.

[0103] The method for generating plasma by the substrate processing apparatus described in the above example may be an inductively coupled plasma (ICP) method. Furthermore, the method for generating plasma by the above substrate processing apparatus may be a capacitively coupled plasma (CCP) method. Furthermore, the substrate processing apparatus may generate plasma by using both the ICP (Inductive coupled plasma) method and the CCP (Capacitor couple plasma) method, or by using a method selected from the ICP (Inductive coupled plasma) method and the CCP (Capacitor couple plasma) method. Furthermore, the substrate processing apparatus may also generate plasma by using a remote plasma method.

[0104] The above detailed description illustrates the present invention. In addition, the aforementioned contents are used to represent and illustrate the preferred embodiments of the present invention, and the present invention can be used in various other combinations, changes and environments. That is, changes or modifications can be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed content described, and / or the scope of the technology or knowledge in the field. The aforementioned embodiments are intended to illustrate the best state for realizing the technical idea of ​​the present invention, and various changes required in the specific application field and use of the present invention can also be made. Therefore, the detailed description of the invention above is not intended to limit the present invention to the disclosed implementation state. In addition, the attached claims should be understood to also include other implementation states.

Claims

1. A substrate processing device, in, include: A housing having a processing space, a chuck supporting a substrate in the processing space, a base plate located at an upper portion in the processing space, a dielectric plate facing the upper surface of the substrate supported by the chuck in the processing space and detachably provided on the base plate, an upper edge electrode provided in such a manner as to surround the dielectric plate, a lower edge electrode, facing the upper edge electrode, and provided in a manner of surrounding the chuck, and a dielectric plate alignment fixture, which, when the dielectric plate is replaced with an unused dielectric plate, adjusts the mounting position of the unused dielectric plate to be consistent with the mounting position of the dielectric plate; The dielectric plate alignment fixture comprises: a jig body having a shape surrounding the dielectric plate when viewed from above, and a distance detection member for detecting the distance between the fixture body and the dielectric plate; At least three distance detecting members are provided at different positions from each other along the peripheral direction of the jig body.

2. The substrate processing apparatus according to claim 1, wherein: The jig body is detachably provided on the base plate.

3. The substrate processing apparatus according to claim 2, wherein: The upper edge electrode is detachably provided on the base plate, The dielectric plate alignment jig is provided so as to be coupled to the base plate at a position where the upper edge electrode is mounted on the base plate in a state where the upper edge electrode is removed from the base plate.

4. The substrate processing apparatus according to claim 3, wherein: A bonding member bonding the upper edge electrode to the base plate and a bonding member bonding the dielectric plate alignment jig to the base plate are the same bonding member.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The distance detecting member includes a contact sensor.

6. The substrate processing apparatus according to claim 5, wherein: The contact sensor comprises: a moving pin coupled to a reference position on the jig body in such a manner as to be able to advance or retreat in a direction toward the dielectric plate, and The detection unit detects a distance from a position where the moving pin contacts the dielectric plate when the moving pin moves forward from the reference position toward the dielectric plate.

7. The substrate processing apparatus according to claim 6, wherein: The movable pin further includes a contact portion at its front end portion, and the movable pin contacts the dielectric plate at the contact position through the contact portion. The contacts are provided by a material having a lower strength than the dielectric plate.

8. The substrate processing apparatus according to claim 5, wherein: Four of the touch sensors are provided at equal intervals on the jig body.

9. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The distance detecting member includes an optical sensor.

10. A dielectric plate replacement method, wherein the dielectric plate is replaced with an unused dielectric plate in a substrate processing device, the substrate processing device comprising: a housing having a processing space; a chuck supporting a substrate in the processing space; a base plate located at an upper portion in the processing space; a dielectric plate facing the upper surface of the substrate supported by the chuck in the processing space and detachably provided on the base plate; An upper edge electrode is provided in a manner of surrounding the dielectric plate and is detachably provided on the base plate; A lower edge electrode facing the upper edge electrode; and a dielectric plate alignment fixture, which adjusts the mounting position of the unused dielectric plate to be consistent with the mounting position of the dielectric plate when the dielectric plate is replaced with an unused dielectric plate, wherein: The dielectric plate replacement method comprises: The mounting step includes placing the jig body on the base plate so that the dielectric plate is aligned with the jig body of the jig surrounding the dielectric plate. a measuring step of measuring the distance between the alignment fixture and the dielectric plate at multiple locations of the alignment fixture, the step of removing the dielectric plate from the base plate, the step of positioning the unused dielectric plate on the base plate, an adjusting step of adjusting the position of the unused dielectric plate relative to the base plate based on the distance measured in the measuring step, and The fixing step is to fix the unused dielectric plate to the base plate.

11. The dielectric plate replacement method according to claim 10, wherein: The installation steps include: the step of removing the upper edge electrode from the base plate, and The step of providing the dielectric plate alignment jig at a location of the base plate where the upper edge electrode is coupled.

12. The dielectric plate replacement method according to claim 11, wherein: The measuring step comprises: a moving step of moving moving pins provided on a jig body of the alignment jig from reference positions to contact positions where the moving pins contact the dielectric plate, respectively; and The step of measuring the moving distance from the reference position to the contact position for each of the moving pins.

13. The dielectric plate replacement method according to claim 12, wherein: The adjusting step comprises: A step of moving the moving pin forward from the reference position by the moving distance in a state where the unused dielectric plate is surrounded by the alignment jig.

14. The dielectric plate replacement method according to claim 10, wherein: Also includes: the step of removing the dielectric plate alignment jig, and The step of rebonding the removed upper edge electrode to the base plate.

15. A dielectric plate replacement method, wherein the dielectric plate is replaced with an unused dielectric plate in a substrate processing device, the substrate processing device comprising: a housing having a processing space; a chuck supporting a substrate in the processing space; a base plate located at an upper portion in the processing space; a dielectric plate facing the upper surface of the substrate supported by the chuck in the processing space and detachably provided on the base plate; An upper edge electrode is provided in a manner of surrounding the dielectric plate and is detachably provided on the base plate; A lower edge electrode facing the upper edge electrode; and a dielectric plate alignment fixture, which adjusts the mounting position of the unused dielectric plate to be consistent with the mounting position of the dielectric plate when the dielectric plate is replaced with an unused dielectric plate, wherein: The dielectric plate replacement method comprises: The step of opening the housing, the step of removing the upper edge electrode from the base plate, The step of arranging the dielectric plate alignment fixture at a position of the base plate in conjunction with the upper edge electrode, The step of measuring the distance between the dielectric plate alignment jig and the dielectric plate at multiple locations of the dielectric plate alignment jig, the step of removing the dielectric plate from the base plate, The step of positioning the unused dielectric plate on the base plate, an adjusting step of adjusting the position of the unused dielectric plate so that the distance between the unused dielectric plate and the plurality of movable pins reaches the distance measured in the measuring step, a fixing step of fixing the unused dielectric plate to the base plate, the step of removing the dielectric plate alignment jig from the base plate, and The step of rebonding the upper edge electrode to the base plate.

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