Pore fill, lower electrode assembly, and process chamber

Abstract

The application discloses a gas hole filler, a lower electrode assembly and a process chamber. The gas hole filler is used for filling in a through hole of an electrostatic chuck. The electrostatic chuck comprises a bearing surface and a gas inlet surface arranged oppositely, and the through hole is formed through the gas inlet surface to the bearing surface. The gas hole filler comprises a first filler rod fixed to one end of the through hole close to the gas inlet surface, and the first filler rod is provided with a first gas inlet hole extending in an axial direction; a second filler rod arranged at one end of the through hole close to the bearing surface and abutting against the first filler rod, and an outer periphery of the second filler rod is formed with a gas flow channel communicated with the first gas inlet hole; and the first filler rod is used for limiting the second filler rod from moving to one side of the gas inlet surface. During the process, the second filler rod cannot move to one side of the gas inlet surface due to the constraint of the first filler rod, so that the distance between the end surface of the second filler rod and a wafer cannot be enlarged, and the occurrence of the sparking problem can be avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a gas hole filler, a lower electrode assembly and a process chamber. BACKGROUND

[0002] Semiconductor manufacturing generally includes a step of capacitively coupled plasma (CCP) etching a dielectric layer. When CCP etching, a wafer is adsorbed on an electrostatic chuck. A large amount of heat is generated when a plasma (also known as a plasma) etches the wafer. The heat on the wafer needs to be promptly conducted away.

[0003] A method for conducting away the heat on the wafer generally includes setting an air inlet hole on the electrostatic chuck, and then introducing helium gas between the electrostatic chuck and the wafer through the air inlet hole, so as to conduct the heat on the wafer to the electrostatic chuck by taking helium gas as a medium.

[0004] In order to prevent sparking, a filler rod needs to be inserted into the air inlet hole to reduce the aperture of the air flow channel. As the process proceeds, there is a certain probability of sparking between the top surface of the filler rod and the wafer. SUMMARY

[0005] To solve the above technical problems, the present application provides a gas hole filler, a lower electrode assembly and a process chamber, which can improve the problem that a certain probability of sparking occurs between the top surface of the filler rod and the wafer.

[0006] To solve the above technical problems, in a first aspect, the present application provides a gas hole filler, which is used to fill a through hole of an electrostatic chuck; wherein the electrostatic chuck includes a bearing surface and an air inlet surface arranged opposite to each other, and the through hole is penetrated from the air inlet surface to the bearing surface; and the gas hole filler includes:

[0007] a first filler rod fixed to one end of the through hole close to the air inlet surface, and the first filler rod is provided with a first air inlet hole extending in an axial direction;

[0008] a second filler rod arranged at one end of the through hole close to the bearing surface and abutting against the first filler rod, and an outer periphery of the second filler rod forms an air flow channel in communication with the first air inlet hole;

[0009] The first filler rod is used to limit the second filler rod from moving to one side of the air inlet surface.

[0010] Optionally, the first filler rod includes a first cylinder and a second cylinder connected coaxially, and a diameter of the second cylinder is smaller than a diameter of the first cylinder.

[0011] The first column body is arranged close to the air inlet face and is threadedly connected with the through hole; the second column body is arranged close to the bearing face; the first air inlet hole is arranged in the first column body and avoids the second column body;

[0012] The second filling rod abuts against the second column body.

[0013] Optionally, the second filling rod comprises a third column body and a fourth column body coaxially connected;

[0014] The third column body is arranged close to the air inlet face and is transitionally fitted with the through hole, and the third column body abuts against the second column body; the third column body is provided with a second air inlet hole extending in the axial direction, the second air inlet hole avoids the second column body and the fourth column body and forms part of the airflow channel;

[0015] The fourth column body is provided with a gap with the hole wall of the through hole, and the gap forms another part of the airflow channel.

[0016] Optionally, the diameter of the fourth column body is smaller than the diameter of the third column body to form the gap, and the gap is an annular gap.

[0017] Optionally, the fourth column body comprises a columnar body and a protruding structure arranged on the side surface of the columnar body, the fourth column body is shrink-fitted with the through hole, and the protruding structure is arranged to form the gap between the fourth column body and the hole wall of the through hole.

[0018] Optionally, the protruding structure comprises a plurality of point-shaped protrusions arranged on the side surface of the columnar body.

[0019] Optionally, the protruding structure comprises at least two protrusions arranged on the side surface of the columnar body and extending in the axial direction, and the gap is formed by the adjacent two protrusions, the side surface of the columnar body and the hole wall of the through hole, and the gap is a strip-shaped gap.

[0020] Optionally, the through hole is a stepped hole, and the step of the stepped hole faces the air inlet face;

[0021] The end surface edge of the third column body abuts against the step, and the second air inlet hole avoids the step.

[0022] In a second aspect, the embodiments of the present application further provide a lower electrode assembly comprising an electrostatic chuck and the air hole filler as described in the above embodiments:

[0023] The electrostatic chuck comprises a bearing surface and a gas inlet surface arranged oppositely, and at least one through hole penetrating from the gas inlet surface to the bearing surface.

[0024] Optionally, the electrostatic chuck comprises a conductive disc and an insulating disc arranged in layers, the bearing surface is located on a side of the insulating disc away from the conductive disc, the gas inlet surface is located on a side of the conductive disc away from the insulating disc, the through hole comprises a first part located in the insulating disc and a second part located in the conductive disc, and a diameter of the first part is smaller than a diameter of the second part.

[0025] The gas hole filler is filled in the second part, and the second filling rod abuts against a side of the insulating disc away from the bearing surface.

[0026] The first part is further provided with a corrosion-resistant part in gap fit with the first part, and a gap between the corrosion-resistant part and a hole wall of the first part is in communication with the strip-shaped gap.

[0027] Optionally, the fourth column is provided with a plurality of notches corresponding to the strip-shaped gaps at an end surface edge of the insulating disc, the notches are located at the corresponding strip-shaped gaps to communicate the gap between the corrosion-resistant part and the hole wall of the first part and the strip-shaped gap.

[0028] Optionally, the lower electrode assembly further comprises:

[0029] A gas distribution disc is arranged in gap fit with the electrostatic chuck on a side of the gas inlet surface through a sealing ring, the sealing ring, the gas distribution disc and the electrostatic chuck enclose a gas distribution space, and the through hole is in communication with the gas distribution space.

[0030] The gas distribution disc is internally provided with a flow uniformization cavity, a side of the gas distribution disc facing the electrostatic chuck is provided with a plurality of flow uniformization holes, and a side of the gas distribution disc away from the electrostatic chuck is provided with a third gas inlet hole for gas inlet, and the flow uniformization holes communicate the gas distribution space and the flow uniformization cavity.

[0031] In a third aspect, the embodiments of the present application further provide a process chamber, comprising a chamber body and a lower electrode assembly as described in the above embodiments, and the lower electrode assembly is arranged in the chamber body.

[0032] As described above, the pore filler of this application includes a first filler rod and a second filler rod. Gas enters from the first inlet hole of the first filler rod through the inlet surface of the electrostatic chuck, then flows into the airflow channel on the outer periphery of the second filler rod, and finally flows out from the bearing surface of the electrostatic chuck, entering the gap between the wafer and the electrostatic chuck, acting as a medium for heat dissipation from the wafer to the electrostatic chuck. Since the second filler rod is disposed in the through hole near the bearing surface and connected to the first filler rod, while the first filler rod is fixed in the through hole near the inlet surface, during the process, the second filler rod is subjected to the downward force of plasma and helium flow (towards the inlet surface), but due to the constraint of the first filler rod, it cannot move to the side of the inlet surface. Therefore, the distance between the end face of the second filler rod and the wafer will not increase, which can avoid the occurrence of arcing problems. Attached Figure Description

[0033] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, those skilled in the art can obtain other drawings based on these drawings without any creative effort.

[0034] Figure 1 This is a schematic diagram of the process chamber structure of a CCP etching device based on related technologies;

[0035] Figure 2 This is a schematic diagram illustrating the cooperation relationship between the electrostatic chuck and the filler rod in related technologies;

[0036] Figure 3 This is a schematic diagram of the structure of a process chamber provided in an embodiment of this application;

[0037] Figure 4 This is a schematic diagram of the fit between an electrostatic chuck and a pore filler provided in an embodiment of this application, wherein (a) is a cross-sectional view, (b) is a top view, and (c) is a partial enlarged view;

[0038] Figure 5 Is with Figure 4 The structural schematic diagrams of the corresponding parts are shown below, where (a) is a cross-sectional view of the electrostatic chuck, (b) is a cross-sectional view of the first filler rod and the second filler rod, and (c) is a front view of the anti-corrosion part.

[0039] Figure 6 This is a schematic diagram of the structure of a second filling rod provided in an embodiment of this application;

[0040] Figure 7is a structural schematic diagram of a first filling rod provided by an embodiment of the present application, wherein (a) is a front view, (b) is a sectional view, (c) is a perspective view, and (d) is a top view;

[0041] Figure 8 is another structural schematic diagram of a second filling rod provided by an embodiment of the present application, wherein (a) is a sectional view, (b) is a main sectional view, (c) is a perspective view, and (d) is a top view of a third cylinder;

[0042] Figure 9 is a schematic diagram of a mounting method of a first filling rod and a second filling rod provided by an embodiment of the present application;

[0043] Figure 10 is a structural schematic diagram of providing helium to an electrostatic chuck in the related art;

[0044] Figure 11 is a structural schematic diagram of a gas distribution plate provided by an embodiment of the present application, wherein (a) is a perspective structural schematic diagram, and (b) is a sectional structural schematic diagram.

[0045] The implementation, functional features and advantages of the present application will be further described with reference to the embodiments and the accompanying drawings. The above-described drawings have shown the specific embodiments of the present application, and the following description will be more detailed. These drawings and the description are not intended to limit the scope of the present application by any means, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0046] The exemplary embodiments will be described in detail herein with reference to the accompanying drawings. The following description refers to the accompanying drawings in which same numbers in different drawings represent the same or similar elements unless otherwise represented. The embodiments described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of apparatuses and methods consistent with some aspects of the present application as detailed in the appended claims.

[0047] It should be noted that, in the present document, the terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can also include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element preceded by "comprises a" does not, without more constraints, foreclose the existence of additional identical elements in the process, method, article, or apparatus that comprises the element. In different embodiments of the present application, components, features, elements, or steps with same names can have the same meaning or different meanings, which should be determined according to the explanation of the component, feature, element, or step in the specific embodiment or further combined with the context in the specific embodiment.

[0048] It should be further understood that the terms "comprise", "comprising", indicate the presence of the stated features, steps, operations, elements, components, items, kinds, and / or groups but do not exclude the presence or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or", "and / or", "including at least one of", etc. used in the present application can be interpreted as inclusive or as meaning any one or any combination. For example, "including at least one of: A, B, C" means "any one of A; B; C; A and B; A and C; B and C; A, B and C". For example, "A, B, or C" or "A, B, and / or C" means "any one of A; B; C; A and B; A and C; B and C; A and B and C". The exception to this definition will occur only when a combination of elements, functions, steps or operations are in some way inherently mutually exclusive.

[0049] It should be understood that although the terms first, second, third, etc. can be used herein to describe various information, these information should not be limited to these terms. These terms are only used to distinguish one type of information from another type of information. For example, without departing from the scope of the present document, the first information can also be referred to as the second information, and similarly, the second information can also be referred to as the first information. Depending on the context, the singular forms "a", "an" and "the" used herein are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0050] It should be understood that the terms "top", "bottom", "upper", "lower", "vertical", "horizontal", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0051] For the convenience of description, in the following embodiments, orthogonal space determined by horizontal plane and vertical direction is taken as an example for description, and the precondition should not be understood as a limitation to the present application.

[0052] Please refer to Figure 1 , Figure 1 is a structural schematic diagram of a process chamber of a CCP etching device in the related art, which comprises a chamber body 10a, an upper electrode assembly 20a and a lower electrode assembly 30a, the lower electrode assembly 30a comprises in sequence an electrostatic chuck 31a, a helium distribution plate 32a, a ceramic support ring 33a, an interface disc 34a and a helium spiral flow guide cylinder 35a. The electrostatic chuck 31a is distributed with a plurality of gas inlet holes 311a, and a filling rod 36a is arranged in each gas inlet hole 311a. The filling rod 36a is fixed by friction between the filling rod 36a and the hole wall of the gas inlet hole 311a.

[0053] Please refer to Figure 2 , during the process, the wafer 101a is located above the electrostatic chuck 31a. With the process going on, the filling rod 36a is prone to move downward under the action of plasma and helium flow, and the distance d0 between the top end of the filling rod 36a and the wafer 101a gradually increases. When the distance d0 is greater than 0.5 mm, the phenomenon of sparking is prone to occur. Based on this, the present application provides a gas hole filling piece, a lower electrode assembly and a process chamber.

[0054] Please refer to Figure 3 , Figure 3 is a structural schematic diagram of a process chamber provided by an embodiment of the present application. The process chamber can comprise a chamber body 100, a lower electrode assembly 200 and an upper electrode assembly 300, and the lower electrode assembly 200 is arranged in the chamber body 100. The lower electrode assembly 200 can comprise an electrostatic chuck 10 and a gas distribution disc 50, and the electrostatic chuck 10 is used for adsorbing a wafer. The gas hole filling piece of each embodiment of the present application can be used for filling the through hole of the electrostatic chuck 10, and is used for providing gas between the lower surface of the wafer.

[0055] Please refer to Figure 4 and Figure 5 , the gas hole filling piece of the embodiment can comprise a first filling rod 20 and a second filling rod 30. Please refer to Figure 4 and Figure 5 , Figure 4 is a schematic diagram of the cooperation relationship between an electrostatic chuck and a gas hole filling piece provided by an embodiment of the present application, wherein (a) is a sectional view, (b) is a top view, and (c) is a local enlarged view, Figure 5 is the same as Figure 4The corresponding structural schematic diagrams of each component are shown, where (a) is a cross-sectional view of the electrostatic chuck, (b) is a cross-sectional view of the first and second filler rods, and (c) is a front view of the corrosion-resistant component. The electrostatic chuck 10 includes a bearing surface 101 and an air inlet surface 102 arranged opposite to each other, combined with... Figure 3 In the shown usage configuration, the bearing surface 101 is the top surface, and the air intake surface 102 is the bottom surface. The electrostatic chuck 10 has at least one through hole 103 extending from the air intake surface 102 to the bearing surface 101. To improve the uniformity of air intake, multiple through holes 103 can be provided and evenly distributed on a circumference concentric with the center of the electrostatic chuck 10. A first filler rod 20 is fixed in the through hole 103 at one end near the air intake surface 102. The first filler rod 20 has a first air intake hole 201 extending axially. A second filler rod 30 is disposed in the through hole 103 at one end near the bearing surface 101 and abuts against the first filler rod 20. An airflow channel 301 communicating with the first air intake hole 201 is formed on the outer periphery of the second filler rod 30. The first filler rod 20 is used to restrict the movement of the second filler rod 30 towards one side of the air intake surface 102.

[0056] The lower electrode assembly in this embodiment includes a first filler rod 20 and a second filler rod 30. Gas enters from the first air inlet 201 of the first filler rod 20 through the air inlet surface 102 of the electrostatic chuck 10, then flows into the airflow channel 301 on the outer periphery of the second filler rod 30, and finally flows out from the bearing surface 101 of the electrostatic chuck 10, entering the gap between the wafer and the electrostatic chuck 10, acting as a medium for heat dissipation from the wafer to the electrostatic chuck 10. Since the second filler rod 30 is disposed in the through hole 103 near the bearing surface 101 and connected to the first filler rod 20, and the first filler rod 20 is fixed in the through hole 103 near the air inlet surface 102, during the process, the second filler rod 30 is subjected to the downward force of plasma and helium gas flow (towards the air inlet surface 102), but due to the constraint of the first filler rod 20, it cannot move to one side of the air inlet surface 102. Therefore, the distance between the end face of the second filler rod 30 and the wafer will not increase, thus avoiding the occurrence of arcing problems.

[0057] It should be noted that, in this embodiment, the specific structure and connection method of the first filling rod 20 and the second filling rod 30 can be varied.

[0058] For example, the threaded part 104 can be arranged on the side of the through hole 103 close to the air inlet face 102, and the first filling rod 20 can be a cylinder and can be fixed in the through hole 103 by screwing to achieve position installation. The second filling rod 30 can also be a cylinder, which has a smaller diameter than the first filling rod 20 and is coaxially arranged, and the annular gap formed between the second filling rod 30 and the through hole 103 serves as the gas flow channel 301. The second filling rod 30 can be connected to the end face of the first filling rod 20 close to the bearing face 101 by a limiting structure, for example, a shaft hole positioning structure or a limiting structure with a limiting pin.

[0059] For example, the limiting structure of the second filling rod 30 in the previous embodiment is further improved. Please refer to Figure 6 , Figure 6 is a structural schematic diagram of a second filling rod provided by the embodiment of the present application. The side surface of the second filling rod 30 is provided with a protruding rib 33 extending in the axial direction. The protruding rib 33 can be provided with two or more than three. The second filling rod 30 is fixed in the through hole 103 by the friction force between the protruding rib 33 and the through hole 103 of the electrostatic chuck 10. The space between the adjacent two protruding ribs 33 forms the gas flow channel 301. The second filling rod 30 is only abutted and connected to the end face of the first filling rod 20 close to the bearing face 101. Since the first filling rod 20 is fixed by screwing, the movement of the second filling rod 30 to the side of the air inlet face 102 can be limited. Compared with the annular gas flow channel 301, the rigidity of the second filling rod 30 has certain requirements (if the rigidity is too low, the second filling rod 30 may be deformed and out of axis with the through hole 103, and a uniform annular gap cannot be formed, resulting in uneven gas flow). The second filling rod 30 of the embodiment can be made of a material with relatively low rigidity (such as Teflon), which can ensure that the gas flow channels 301 are relatively uniform. In addition, in the embodiment, the first filling rod 20 and the second filling rod 30 are not suitable for being made into an integrated structure, so as to prevent the second filling rod 30 from being twisted and broken when the first filling rod 20 is assembled and tightened.

[0060] It should be noted that the connection between the first filling rod 20 and the through hole 103 is not limited to screwing. As long as the two can be fixed after assembly, for example, the positioning and fixing can be achieved by a pin hole structure.

[0061] In an embodiment, please refer to Figure 5 and Figure 7 , Figure 7is a structural schematic diagram of a first filling rod provided by an embodiment of the present application, wherein (a) is a front view, (b) is a sectional view, (c) is a perspective view, and (d) is a top view. The first filling rod 20 can include a first cylinder 21 and a second cylinder 22 coaxially connected, and the diameter of the second cylinder 22 is smaller than that of the first cylinder 21. The first cylinder 21 is arranged close to the air inlet face 102 and is threadedly connected with the through hole 103; the second cylinder 22 is arranged close to the bearing face 101, the first air inlet hole 201 is arranged in the first cylinder 21 and avoids the second cylinder 22, and the second filling rod 30 abuts against the second cylinder 22.

[0062] The second filling rod 30 can be the structure described in the above embodiment and can abut against the second cylinder 22. In the present embodiment, the second cylinder 22 is equivalent to a boss arranged on the first cylinder 21 and can reserve space for the air outlet end of the first air inlet hole 201, so that the gas can enter the airflow channel 301 between the second filling rod 30 and the hole wall of the through hole 103. The first cylinder 21 and the second cylinder 22 can be integrally formed or can be assembled from separate components.

[0063] In one embodiment, please refer to Figure 5 and Figure 8 , Figure 8 is another structural schematic diagram of a second filling rod provided by an embodiment of the present application, wherein (a) is a sectional view, (b) is a main sectional view, (c) is a perspective view, and (d) is a top view of a third cylinder. The second filling rod 30 can include a third cylinder 31 and a fourth cylinder 32 coaxially connected, the third cylinder 31 is arranged close to the air inlet face 102 and is transitionally fitted with the through hole 103, and the third cylinder 31 abuts against the second cylinder 22. The third cylinder 31 is provided with a second air inlet hole 301A extending in the axial direction, the second air inlet hole 301A avoids the second cylinder 22 and the fourth cylinder 32 and constitutes part of the airflow channel 301; the fourth cylinder 32 is provided with a gap 301B between the hole wall of the through hole 103, and the gap 301B constitutes another part of the airflow channel 301. In the present embodiment, the third cylinder 31 can be equal in diameter to the first cylinder 21. The third cylinder 31 and the fourth cylinder 32 can be integrally formed or can be assembled from separate components.

[0064] As an example of the gap 301B, the fourth cylinder 32 has a diameter smaller than that of the third cylinder 31, in other words, the projection of the fourth cylinder 32 on the end face of the third cylinder 31 is within the range of the end face of the third cylinder 31, so as to form the gap 301B, which is an annular gap. That is, the fourth cylinder 32 in the embodiment can be a regular cylinder, which forms the annular gap 301B with the hole wall of the through hole 103. The fourth cylinder 32 is preferably made of a material with high rigidity, so as to avoid bending deformation of the fourth cylinder 32 in the through hole 103 and reduce the coaxiality between the fourth cylinder 32 and the through hole 103.

[0065] As another example of the gap 301B, the fourth cylinder 32 can include a cylindrical body 321 and a protruding structure 322 arranged on the side surface of the cylindrical body 321. The fourth cylinder 32 is in interference fit with the through hole 103, and the protruding structure 322 is arranged between the fourth cylinder 32 and the hole wall of the through hole 103 to form the gap 301B. It can be understood that the protruding structure 322 enables stable fit of the fourth cylinder 32 with the through hole 103.

[0066] For example, the protruding structure 322 can include a plurality of point-like protrusions (not shown in the drawings) arranged on the side surface of the cylindrical body 321. The point-like protrusions can form the gap 301B between the cylindrical body 321 and the hole wall of the through hole 103, as the upper half of the airflow passage 301.

[0067] For another example, please continue to refer to Figure 8 The protruding structure 322 can include at least two protrusions 322 arranged on the side surface of the cylindrical body 321 and extending in the axial direction. The gap 301B is formed by the adjacent two protrusions 322, the side surface of the cylindrical body 321 and the hole wall of the through hole 103. The gap 301B is a strip-shaped gap. In the embodiment, the fourth cylinder 32 of the embodiment can be made of a material with relatively low rigidity (such as Teflon), and the strip-shaped gap 301B can basically maintain the shape unchanged, so as to ensure the stability of the airflow.

[0068] In one embodiment, the through hole 103 of the electrostatic chuck 10 is a stepped hole, and the step 103C of the stepped hole faces the gas inlet face 102. The end face edge of the third cylinder 31 abuts on the step 103C, so as to axially position the assembly of the second filling rod 30. The second gas inlet hole 301A avoids the step 103C, so as to communicate the second gas inlet hole 301A with the gap 301B, and form the airflow passage 301.

[0069] The embodiment of the present application also provides a lower electrode assembly, which comprises the electrostatic chuck 10 and the gas hole filling piece as described in the above embodiments. The electrostatic chuck 10 comprises a bearing surface 101 and a gas inlet surface 102 arranged oppositely, and the electrostatic chuck 10 is provided with at least one through hole 103 which is penetrated from the gas inlet surface 102 to the bearing surface 101, and the gas hole filling piece is filled in the through hole 103.

[0070] In one embodiment, referring to Figure 5 , the electrostatic chuck 10 can comprise a conductive disc 11 and an insulating disc 12 which are arranged in layers, the conductive disc 11 can be an aluminum disc, and the insulating disc 12 can be a ceramic adsorption layer formed on the surface of the conductive disc 11. The bearing surface 101 is located on the side of the insulating disc 12 which is away from the conductive disc 11, the gas inlet surface 102 is located on the side of the conductive disc 11 which is away from the insulating disc 12, and the through hole 103 comprises a first part 103A located in the insulating disc 12 and a second part 103B located in the conductive disc 11, the diameter of the first part 103A is smaller than the diameter of the second part 103B to form a step 103C. Please refer to Figure 4 and Figure 8 , the gas hole filling piece is filled in the second part 103B, and the second filling rod 30 abuts against the side of the insulating disc 12 which is away from the bearing surface 101; the first part 103A of the through hole 103 is also provided with an anti-corrosion piece 40, for example, the anti-corrosion piece 40 can be made of SiC which has strong ability to resist plasma corrosion, and can protect the second filling rod 30 when the second filling rod 30 is made of Teflon. The anti-corrosion piece 40 is in clearance fit with the hole wall of the first part 103A of the through hole 103, the clearance 401 between the anti-corrosion piece 40 and the hole wall of the first part 103A of the through hole 103 is in communication with the strip-shaped clearance 301B, so that the gas can flow out from the clearance 401 after passing through the strip-shaped clearance 301B. As an example, a positioning hole can be arranged on the top surface of the fourth cylinder 32 of the second filling rod 30, and the bottom surface of the anti-corrosion piece 40 is provided with a boss which is in fit with the positioning hole, and the anti-corrosion piece 40 is positioned with the fourth cylinder 32 through shaft hole fit. In addition, the second part 103B of the through hole 103 can be correspondingly provided with a hole diameter which is in fit with the diameters of the segments of the first filling rod 20 and the second filling rod 30.

[0071] As an example of the clearance 401 in communication with the strip-shaped clearance 301B, please refer to Figure 4 , the end surface edge of the fourth cylinder 32 of the second filling rod 30 towards the insulating disc 12 is provided with a plurality of notches 302 which are in one-to-one correspondence with the strip-shaped clearances 301B, and the notches 302 are located at the corresponding strip-shaped clearances 301B to communicate the clearance 401 between the anti-corrosion piece 40 and the hole wall of the first part 103A of the through hole 103 and the strip-shaped clearances 301B.

[0072] In specific application, please refer to Figure 9 , Figure 9is a schematic diagram of a mounting method of the first filler rod and the second filler rod provided by the embodiment of the present application. The second filler rod 30 and the first filler rod 20 can be placed in the through hole 103 in sequence from the gas inlet face 102, then the slot 202 at the bottom of the first filler rod 20 is rotated by a screwdriver to push the second filler rod 30 to the side of the bearing face 101, and the distance between the top surface of the second filler rod 30 and the bearing face 101 is measured by the height gauge from the side of the bearing face 101 of the electrostatic chuck 10 through the through hole 103 until the reading of the height gauge reaches the target reading, and the installation is completed. The tolerance can be set to 0.05 mm in this step. Then the corrosion-resistant piece 40 is installed in the first part 103A of the through hole 103, the distance between the corrosion-resistant piece 40 and the bearing face 101 of the electrostatic chuck 10 is measured by the height gauge, and the slot 202 at the bottom of the first filler rod 20 is rotated by the screwdriver to adjust the height of the corrosion-resistant piece 40 to the design value through the threaded structure, and the adjustment accuracy can reach 0.01 mm. At the same time, since the height of the second filler rod 30 in the through hole 103 is limited by the first filler rod 20, the problem of sparking during the process can be avoided.

[0073] Further, the present application also further improves the gas inlet uniformity of the lower electrode assembly. According to the following Paschen's theorem formula:

[0074]

[0075] wherein V b is the breakdown voltage, P is the gas pressure at the breakdown position, d is the gap size at the breakdown position, γ se is the secondary electron emission coefficient, which is related to the material, and B and A are constants, which are related to the composition of the gas. Please refer to Figure 2 and Figure 10 , Figure 10 is a schematic diagram of a structure for providing helium to the electrostatic chuck in the related art. When the actual voltage at the top end of the filler rod 36a is greater than the voltage calculated by Paschen's law, the gas at the top end of the filler rod 36a will be broken down, causing sparking. Therefore, it is necessary to control the p*d value to be as small as possible to ensure that the actual voltage at the top end of the filler rod 36a is less than the breakdown voltage. Figure 2 The helium distribution plate 32a in has only one gas inlet 321a, and the gas inlet 321a is eccentrically arranged relative to the helium distribution plate 32a due to the need to set the voltage feeding component in the center. After the gas enters from the gas inlet 321a, the distances of the different gas inlets 311a on the electrostatic chuck 31a are not the same, and d1

[0076] Based on the above problems, in one embodiment, please refer toFigure 3 and Figure 11 , Figure 11 This is a schematic diagram of the structure of a gas equalization disk provided in an embodiment of this application, wherein (a) is a three-dimensional structural schematic diagram and (b) is a cross-sectional structural schematic diagram. The lower electrode assembly may also include a gas equalization disk 50. The gas equalization disk 50 is spaced apart from the electrostatic chuck 10 on one side of the air inlet surface 102 by a sealing ring 61. The sealing ring 61, the gas equalization disk 50, and the electrostatic chuck 10 form a gas equalization space 601. The height of the gas equalization space 601 is determined by the degree of compression of the sealing ring 61, which can be controlled by the tightening degree of the control screw 71. The through hole 103 communicates with the gas equalization space 601; the gas equalization disk 50 has a flow equalization cavity 501 inside, and the side of the gas equalization disk 50 facing the electrostatic chuck 10 has multiple flow equalization holes 502. The side of the gas equalization disk 50 away from the electrostatic chuck 10 has a third air inlet hole 503 for air intake. The flow equalization holes 502 communicate the gas equalization space 601 with the flow equalization cavity 501.

[0077] As an example, three rings of evenly distributed flow equalization holes 502 can be set on the air equalization disk 50. The flow equalization holes 502 of each ring are set on the pitch circle of the air equalization disk 50 with different diameters. The hole diameter can be 0.3~0.5mm. For example, the diameter d1 of the inner pitch circle and the number of holes can be: d1=40~60mm, and the number of holes can be 8~10; the diameter d2 of the middle pitch circle and the number of holes can be: d2=70~90mm, and the number of holes can be 12~15; the diameter d3 of the outer pitch circle and the number of holes can be: d3=95~120mm, and the number of holes can be 18~20.

[0078] During the process, gas enters the uniform flow chamber 501 through the third air inlet 503, and then flows into the uniform flow space 601 between the uniform flow disk 50 and the electrostatic chuck 10 through multiple uniform flow holes 502. Compared to Figure 10 There is only one air inlet 321a. In this embodiment, the gas equalization plate 50 has multiple flow equalization holes 502, which makes the gas in the gas equalization space 601 more uniform. This allows the gas to flow out from different through holes 103 of the electrostatic chuck 10 at basically the same pressure, thereby enabling more precise control of the actual voltage at the top of the second filling rod 30 and avoiding arcing problems.

[0079] As an example, the lower electrode assembly may further include a ceramic support ring 81 and an interface plate 82 sequentially disposed below the gas distribution plate 50, and a spiral flow guide cylinder 83 disposed within the ceramic support ring 81. The gas distribution plate 50 and the ceramic support ring 81 are sealed by a sealing ring 62 and locked by a screw 72. The ceramic support ring 81 and the interface plate 82 are sealed by a sealing ring 63 and locked by a screw 73. The spiral flow guide cylinder 83 is located within the ceramic support ring 81, with both ends connected to the third air inlet 503 of the gas distribution plate 50 and the air inlet channel 821 on the interface plate 82, respectively, and sealed by sealing rings 64 and 65, respectively.

[0080] In one embodiment, referring to the figures, the present application also provides a semiconductor process equipment, which can include the process chamber as described in the above embodiments.

[0081] For other working principles and processes of the process chamber and the semiconductor process equipment of the present embodiment, please refer to the above description of the lower electrode assembly of the embodiments of the present application, which will not be repeated here.

[0082] The above has described in detail the lower electrode assembly, the process chamber and the semiconductor process equipment provided by the present application, and the principles and implementation manners of the present application have been described by using specific examples. It should be noted that the description of each embodiment in the present application has its own focus, and the parts not described or recorded in one embodiment can be referred to the relevant description of other embodiments.

[0083] The above is only the preferred embodiments of the present application, and does not limit the patent scope of the present application, and each technical feature of the technical solutions of the present application can be combined arbitrarily. In order to make the description simple, each technical feature in the above embodiments is not described in all possible combinations, and any equivalent structure or equivalent flow conversion made by using the content of the present application and the drawings, or directly or indirectly applied in other related technical fields, as long as the combination of these technical features does not exist contradiction, are also included in the patent protection scope of the present application.

Claims

1. A pore filler, characterized in that, The pore filler is used to fill the through hole of the electrostatic chuck; wherein, the electrostatic chuck includes a bearing surface and an air inlet surface disposed opposite to each other, and the through hole extends from the air inlet surface to the bearing surface; the pore filler includes: A first filler rod is fixed in the through hole at one end near the air inlet surface, and the first filler rod is provided with a first air inlet hole extending axially. The second filling rod is disposed in the through hole at one end near the bearing surface and abuts against the first filling rod. An airflow channel communicating with the first air inlet is formed on the outer periphery of the second filling rod. The first filler rod is used to restrict the movement of the second filler rod toward one side of the air intake surface; The first filler rod includes a first column and a second column coaxially connected, wherein the diameter of the second column is smaller than the diameter of the first column; The first column is disposed near the air intake surface and is threadedly connected to the through hole; the second column is disposed near the bearing surface, and the first air intake hole is disposed in the first column and is disposed away from the second column. The second filling rod abuts against the second column.

2. The pore filler according to claim 1, characterized in that, The second filler rod includes a third column and a fourth column that are coaxially connected; The third column is disposed near the air intake surface and transitions into the through hole. The third column abuts against the second column. The third column is provided with a second air intake hole extending axially. The second air intake hole is disposed to avoid the second column and the fourth column and forms part of the airflow channel. A gap is provided between the fourth column and the wall of the through hole, and the gap constitutes another part of the airflow channel.

3. The pore filler according to claim 2, characterized in that, The diameter of the fourth column is smaller than the diameter of the third column to form the gap, which is an annular gap.

4. The pore filler according to claim 2, characterized in that, The fourth column includes a columnar body and a protruding structure disposed on the side of the columnar body. The fourth column is interference-fitted with the through hole, and the protruding structure is spaced apart between the fourth column and the hole wall of the through hole to form the gap.

5. The pore filler according to claim 4, characterized in that, The protrusion structure includes a plurality of dot-shaped protrusions spaced apart on the side of the columnar body.

6. The pore filler according to claim 4, characterized in that, The protruding structure includes at least two protruding strips disposed on the side of the columnar body and extending axially. Two adjacent protruding strips, the side of the columnar body and the wall of the through hole form the gap, which is a strip-shaped gap.

7. The pore-filling component according to any one of claims 2-6, characterized in that, The through hole is a stepped hole, and the steps of the stepped hole face the air intake surface; The end face edge of the third column abuts against the step, and the second air inlet avoids the step.

8. A lower electrode assembly, characterized in that, Includes an electrostatic chuck and a pore-filling component as described in any one of claims 1-7: The electrostatic chuck includes a bearing surface and an air inlet surface arranged opposite to each other. The electrostatic chuck is provided with at least one through hole extending from the air inlet surface to the bearing surface, and the air vent filler is filled in the through hole.

9. A lower electrode assembly, characterized in that, Includes an electrostatic chuck and the pore filler as described in claim 1; The electrostatic chuck includes a bearing surface and an air inlet surface arranged opposite to each other. The electrostatic chuck is provided with at least one through hole extending from the air inlet surface to the bearing surface, and the air vent filler is filled in the through hole. The second filler rod includes a third column and a fourth column that are coaxially connected; The third column is disposed near the air intake surface and transitions into the through hole. The third column abuts against the second column. The third column is provided with a second air intake hole extending axially. The second air intake hole is disposed to avoid the second column and the fourth column and forms part of the airflow channel. A gap is provided between the fourth column and the wall of the through hole, and the gap constitutes another part of the airflow channel; The fourth column includes a columnar body and a protruding structure disposed on the side of the columnar body. The fourth column is interference-fitted with the through hole, and the protruding structure is spaced apart between the fourth column and the hole wall of the through hole to form the gap. The protruding structure includes at least two protruding strips disposed on the side of the columnar body and extending axially. Two adjacent protruding strips, the side of the columnar body and the wall of the through hole form the gap, which is a strip-shaped gap. The electrostatic chuck includes a conductive disk and an insulating disk stacked together. The bearing surface is located on the side of the insulating disk away from the conductive disk, and the air inlet surface is located on the side of the conductive disk away from the insulating disk. The through hole includes a first part located in the insulating disk and a second part located in the conductive disk. The diameter of the first part is smaller than the diameter of the second part. The pore filler is filled in the second portion, and the second filler rod abuts against the side of the insulating disk away from the bearing surface; The first part is further provided with an anti-corrosion component, which is clearance-fitted with the first part, and the gap between the anti-corrosion component and the hole wall of the first part is connected to the strip gap.

10. The lower electrode assembly according to claim 9, characterized in that, The fourth column has multiple notches on its end face edge facing the insulating disk that correspond one-to-one with the strip gaps. The notches are located at the corresponding strip gaps to connect the gap between the anti-corrosion component and the hole wall of the first part with the strip gaps.

11. The lower electrode assembly according to any one of claims 8-10, characterized in that, Also includes: A gas equalization plate is provided on one side of the air inlet surface and spaced apart from the electrostatic chuck by a sealing ring. The sealing ring, the gas equalization plate and the electrostatic chuck form a gas equalization space, and the through hole communicates with the gas equalization space. The gas equalization plate has a flow equalization cavity inside. The side of the gas equalization plate facing the electrostatic chuck has multiple flow equalization holes. The side of the gas equalization plate away from the electrostatic chuck has a third air inlet hole for air intake. The flow equalization holes connect the gas equalization space with the flow equalization cavity.

12. A process chamber, characterized in that, It includes a chamber body and a lower electrode assembly as described in any one of claims 8-11, the lower electrode assembly being disposed within the chamber body.

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