Light-emitting device and display device

By designing a 0.1-0.7 eV energy level difference hole transport layer and a core-shell quantum dot luminescence layer in quantum dot luminescence devices, combining the ZnSe/CdZnS shell structure and low electron transport layer material, the problem of carrier injection imbalance is solved. , improves luminous efficiency and life, and expands the range of material selection.

CN119183312APending Publication Date: 2024-12-24TCL TECHNOLOGY GROUP CORPORATION
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Patent Information

Application Number
CN202310750810.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-06-21
Publication Date
2024-12-24

AI Technical Summary

Technical Problem

In existing quantum dot light emitting devices, when low mobility materials are used in hole transport layers, it is difficult to improve luminous efficiency and lifetime at the same time, mainly due to carrier injection imbalance and low hole injection efficiency.

Method used

The hole transport layer and luminescent layer with an energy level difference of 0.1 to 0.7 eV, and the core-shell quantum dot luminescent layer with a material mobility of less than or equal to 1×10-5cm2/Vs, combined with the ZnSe/CdZnS shell structure and low electron transport layer migration The material is prepared into a single layer film to reduce the tunneling barrier and improve the carrier recombination efficiency.

Benefits of technology

It effectively improves the luminous efficiency and service life of the light emitting device, and expands the selectable range of hole transport materials by improving the injection balance of carriers and holes.

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Abstract

The invention discloses a light-emitting device and a display device.The light-emitting device comprises an anode, a hole transport layer, a light-emitting layer and a cathode which are sequentially stacked, the energy level difference between the hole transport layer and the light-emitting layer is 0.1-0.7 eV, and the mobility of the material of the hole transport layer is smaller than or equal to 1 * 10 <-5 > cm < 2 > / Vs; wherein the material of the light-emitting layer comprises core-shell quantum dots, and the thickness of the light-emitting layer is 1-1.5 times of the average particle size of the core-shell quantum dots. The invention aims to improve the light-emitting efficiency and prolong the service life of the light-emitting device when the hole transport layer adopts a low-mobility material.
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