Standard mask device

Abstract

The invention relates to a standard mask device. This method for evaluating a vapor deposition chamber of an apparatus for manufacturing an organic device is provided with: a vapor deposition step for forming a vapor deposition layer on a standard substrate by vapor-depositing a material on the standard substrate, which includes a standard mark, through a through-hole in a standard mask of a standard mask device in a vapor deposition chamber; a carrying-out step of carrying out the standard substrate on which the vapor deposition layer is formed from the manufacturing device; and an observation step for observing the positional relationship between the standard mark and the vapor deposition layer on the standard substrate carried out from the manufacturing apparatus.

Description

[0001] This application is a divisional application. The Chinese national application number of its original application is 202110267508.8, the application date is March 12, 2021, and the name of the invention is "Organic devices and manufacturing devices therefor, evaluation and maintenance methods for evaporation chambers, standard mask devices and manufacturing methods therefor, and standard substrates." Technical Field

[0002] Embodiments of the present disclosure relate to an evaluation method for a vapor deposition chamber of an organic device manufacturing apparatus, a standard mask apparatus and a standard substrate used in the evaluation method, a method for manufacturing the standard mask apparatus, an organic device manufacturing apparatus having a vapor deposition chamber evaluated by the evaluation method, an organic device having a vapor deposition layer formed in the vapor deposition chamber evaluated by the evaluation method, and a maintenance method for the vapor deposition chamber of the organic device manufacturing apparatus. Background Art

[0003] In the field of display devices used in portable devices such as smartphones and tablet PCs, organic EL display devices have attracted attention. As a manufacturing method and manufacturing device for organic devices such as organic EL display devices, it is known to use a mask having through holes arranged in a desired pattern to form pixels in a desired pattern and a method and device. For example, first, an electrode substrate having a first electrode formed in a pattern corresponding to the pixel is prepared. Then, the electrode substrate is moved into the manufacturing device, and an organic material is attached to the first electrode through the through holes of the mask in the evaporation chamber, and an organic layer such as a light-emitting layer is formed on the first electrode. Then, a second electrode is formed on the organic layer. Then, after the constituent elements such as the organic layer on the electrode substrate are sealed with a sealing substrate, the electrode substrate is moved out of the manufacturing device. In this way, organic devices such as organic EL display devices can be manufactured.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2019-65393 Summary of the invention

[0007] Problems to be solved by the invention

[0008] In the case where a manufactured organic device does not meet specifications, the cause needs to be investigated.

[0009] Means for solving problems

[0010] A method for evaluating a vapor deposition chamber of an organic device manufacturing apparatus according to an embodiment of the present disclosure may include:

[0011] A vapor deposition step, in the vapor deposition chamber, vapor depositing a material onto a standard substrate including a standard mark through a through hole of a mask of a standard mask device to form a vapor deposition layer on the substrate;

[0012] a carrying-out step of carrying out the substrate on which the vapor-deposited layer is formed from the manufacturing device; and

[0013] An observation step of observing a positional relationship between the reference mark and the vapor-deposited layer on the substrate unloaded from the manufacturing apparatus.

[0014] Effects of the Invention

[0015] According to the present disclosure, it is possible to evaluate a vapor deposition chamber of an organic device manufacturing apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1A It is a top view showing an example of an organic device.

[0017] Figure 1B Observed from IA-IA direction Figure 1A Cross-sectional view of an organic device.

[0018] Figure 2 It is a top view showing an example of an organic device group.

[0019] Figure 3 This is a plan view showing an example of an organic device manufacturing apparatus.

[0020] Figure 4 This is a longitudinal sectional view showing an example of a first vapor deposition chamber of the manufacturing apparatus.

[0021] Figure 5 This is a plan view showing an example of a mask device in the first vapor deposition chamber.

[0022] Figure 6 It is a top view showing an example of the middle portion of the mask of the mask apparatus.

[0023] Figure 7 It is a cross-sectional view showing an example of a through hole of a mask.

[0024] Figure 8 This is a longitudinal sectional view showing an example of a first vapor deposition chamber provided with a standard substrate and a standard mask device.

[0025] Fig.9A This is a plan view showing an example of a standard substrate.

[0026] Fig. 9B This is a plan view showing an example of the relationship between a standard substrate and a device space.

[0027] Fig.10 Yes Fig.9AThe top view is an enlarged view of the area surrounded by the dot-dash line marked with the symbol X in the standard substrate.

[0028] Fig.11A This is a plan view showing an example of a standard mark in a standard mark area of ​​a standard substrate.

[0029] Fig. 11B This is a cross-sectional view showing an example of a standard mark in a standard mark area of ​​a standard substrate.

[0030] Fig.12 This is a top view showing an example of a standard mark in the standard mark area.

[0031] Fig.13A It is a top view showing an example of a standard mask device.

[0032] Fig. 13B This is a plan view showing an example of the relationship between a standard mask device and a device space.

[0033] Fig.14 Yes Fig.13A This is an enlarged top view of the area surrounded by the dot-dash line and labeled with the symbol XIV in the standard mask.

[0034] Fig.15 It is a cross-sectional view showing a state where a first vapor-deposited layer is formed on a standard mark of a standard substrate through a through hole of a standard mask.

[0035] Fig.16 This is a plan view showing an example of a first vapor-deposited layer formed on a standard mark of a standard substrate.

[0036] Fig.17 This is a plan view showing an example of a first vapor-deposited layer formed on a standard mark of a standard substrate.

[0037] Fig.18 This is a plan view showing an example of a first vapor-deposited layer formed on a standard mark of a standard substrate.

[0038] Fig.19 This is a plan view showing an example of a first vapor-deposited layer formed on a standard mark of a standard substrate.

[0039] Fig. 20 This is a diagram showing an example of the evaluation results of the first vapor deposition chamber.

[0040] Fig.21 It is a top view showing an example of a standard mask device.

[0041] Fig. 22 It is a top view showing an example of a standard mask device.

[0042] Fig.23 Yes Fig. 22 A top view showing an enlarged view of the middle portion of a standard mask.

[0043] Fig.24 This is a plan view showing an example of the middle portion of the standard mask.

[0044] Fig.25 This is a plan view showing an example of the middle portion of the standard mask.

[0045] Fig.26 This is a plan view showing an example of the middle portion of the standard mask.

[0046] Fig. 27 This is a plan view showing an example of a standard mark on a standard substrate.

[0047] Fig.28 This is a plan view showing an example of a standard mark on a standard substrate.

[0048] Fig.29 This is a plan view showing an example of a standard mark on a standard substrate.

[0049] Fig.30 This is a cross-sectional view showing an example of a process of observing the first vapor-deposited layer on the standard mark of the standard substrate.

[0050] Fig.31 This is a cross-sectional view showing an example of a process of observing the first vapor-deposited layer on the standard mark of the standard substrate.

[0051] Fig.32 This is a plan view showing an example of the middle portion of the standard mask.

[0052] Fig.33 This is a plan view showing an example of a mask device in a vapor deposition chamber.

[0053] Fig.34 It is shown from Fig.33 A top view of the mask device after the mask is removed.

[0054] Fig.35 is along Fig.33 A cross-sectional view of the mask device taken along line XXXV-XXXV.

[0055] Fig.36 is along Fig.33 A cross-sectional view of the mask device taken along line XXXVI-XXXVI.

[0056] Fig.37A Yes Fig.34 FIG. 3 is a plan view showing an example of a mask support body in an enlarged manner in a range surrounded by a dotted line and denoted by a reference numeral XXXVIIA.

[0057] Fig.37B Yes Fig.37A A top view showing an enlarged view of the first connection portion.

[0058] Fig.38A is along Fig.37A A cross-sectional view of the mask support taken along line XXXVIIIA-XXXVIIIA.

[0059] Fig.38B Yes Fig.38A A cross-sectional view showing an enlarged view of the second connection portion.

[0060] Fig.39 This is a cross-sectional view showing an example of a method for manufacturing a mask support.

[0061] Fig.40 This is a cross-sectional view showing an example of a method for manufacturing a mask support.

[0062] Fig.41 The figure shows the image viewed from the second side. Fig.40 Top view of the board.

[0063] Fig.42 This is a cross-sectional view showing an example of a vapor deposition layer formed using a mask apparatus.

[0064] Fig.43 is a cross-sectional view of a mask device.

[0065] Fig.44 It is a top view showing an example of a mask device.

[0066] Fig.45 It is shown from Fig.44 A top view of the mask device after the mask is removed.

[0067] Fig.46 is along Fig.44 A cross-sectional view of the mask device taken along line XXXXVI-XXXXVI.

[0068] Fig.47 is along Fig.44 A cross-sectional view of the mask device taken along line XXXXVII-XXXXVII.

[0069] Fig.48A Yes Fig.45 FIG. 1 is a plan view showing an example of a mask support body in an enlarged manner in a range surrounded by a dotted line and denoted by a symbol XXXXVIIIA.

[0070] Fig.48B Yes Fig.48A A top view showing an enlarged view of the first connection portion.

[0071] Fig.49A is along Fig.48AA cross-sectional view of the mask support taken along line XXXXIXA-XXXXIXA.

[0072] Fig.49B Yes Fig.49A A cross-sectional view showing an enlarged view of the second connection portion.

[0073] Fig.50 It is a top view showing an example of a mask device.

[0074] Fig.51 It is shown from Fig.50 A top view of the mask device after the mask is removed.

[0075] Fig.52 is along Fig.50 A cross-sectional view of the mask device taken along line XXXXXII-XXXXXII.

[0076] Fig.53 Yes Fig.52 A cross-sectional view showing an enlarged view of the welding area and its surroundings of the second horizontal bar component of the mask device.

[0077] Fig.54 It is a top view showing an example of a mask device.

[0078] Fig.55 It is shown from Fig.54 A top view of the mask device after the mask is removed.

[0079] Fig.56 is along Fig.54 A cross-sectional view of the mask device taken along line XXXXXVI-XXXXXVI.

[0080] Fig.57 is along Fig.54 A cross-sectional view of the mask device taken along line XXXXXVII-XXXXXVII.

[0081] Fig.58A Yes Fig.55 FIG. 1 is a plan view showing an example of a mask support body in an enlarged manner in a range surrounded by a dotted line and denoted by a reference numeral XXXXXVIIIA.

[0082] Fig.58B Yes Fig.58A A top view showing an enlarged view of the third connection portion.

[0083] Fig.59 It is a top view showing an example of a mask support.

[0084] Fig.60 It is a top view showing an example of a mask support.

[0085] Fig.61It shows that it will have Fig.59 The mask device of the mask support shown is arranged along Fig.59 A cross-sectional view taken along line XXXXXXI-XXXXXXI of FIG.

[0086] Fig.62 It shows that it will have Fig.60 The mask device of the mask support shown is arranged along Fig.60 A cross-sectional view taken along line XXXXXXII-XXXXXXII.

[0087] Fig.63 It is a cross-sectional view showing an example of a mask device.

[0088] Fig.64 It is a cross-sectional view showing an example of a mask device.

[0089] Fig.65 It is a cross-sectional view showing an example of a mask device.

[0090] Fig.66 It is a cross-sectional view showing an example of a mask device.

[0091] Fig.67 It is a top view showing an example of a mask device.

[0092] Fig.68 1 is a plan view showing a mask support in the embodiment.

[0093] Fig.69 is a table showing the results of the simulation.

[0094] Fig.70 is a graph showing the results of the simulation.

[0095] Fig.71 is a graph showing the results of the simulation.

[0096] Fig.72 It is a diagram showing a vapor deposition chamber including a mask device according to a third embodiment.

[0097] Fig.73 It is a top view showing a mask device according to a third embodiment.

[0098] Fig.74 is schematically shown along Fig.73 Figure 2 is a cross-section of line AA.

[0099] Fig.75A yes Fig.74 A partially enlarged cross-sectional view of .

[0100] Fig.75B yes Fig.75A A partially enlarged cross-sectional view of .

[0101] Fig.76 It is shown Fig.73 A partial enlarged top view of the mask device.

[0102] Fig.77 It is shown Fig.73 An enlarged top view of the through hole group of the mask.

[0103] Fig.78 It is a diagram showing a holding step in the method for manufacturing a mask apparatus according to the third embodiment.

[0104] Fig.79 It is a diagram showing an arrangement step in the method for manufacturing a mask device according to the third embodiment.

[0105] Fig.80A It is a diagram showing a first through-hole confirmation step of a mask alignment step in the method for manufacturing a mask apparatus according to the third embodiment.

[0106] Fig.80B It is a diagram showing a moving process of the mask positioning process in the method for manufacturing the mask apparatus according to the third embodiment.

[0107] Fig.80C It is a diagram showing a tension adjustment process in a mask positioning process in a method for manufacturing a mask apparatus according to a third embodiment.

[0108] Fig.81 This is a partially enlarged plan view showing the mask apparatus in the mask alignment step of the method for manufacturing the mask apparatus according to the third embodiment.

[0109] Fig.82 This is a partially enlarged plan view showing the mask apparatus in a mask alignment step of a method for manufacturing the mask apparatus.

[0110] Fig.83 is schematically shown along Fig.82 Figure 2 is a cross-section of line BB.

[0111] Fig.84 is schematically shown along Fig.82 Figure 2. A cross section of the CC line.

[0112] Fig.85 It is a diagram showing a bonding step in the method for manufacturing a mask device according to the third embodiment.

[0113] Fig.86 It is a diagram showing a disassembly step in the method for manufacturing a mask device according to the third embodiment.

[0114] Fig.87 This is a plan view showing a frame to which one mask is joined in the method for manufacturing a mask device according to the third embodiment.

[0115] Fig.88 This is a plan view showing an intermediate product of a mask device obtained by the method for manufacturing a mask device according to the third embodiment.

[0116] Fig.89 It is a diagram showing a cutting step in the method for manufacturing a mask device according to the third embodiment.

[0117] Fig.90 This is a partially enlarged plan view showing the mask device in the cutting step of the method for manufacturing the mask device according to the third embodiment.

[0118] Fig.91 It is a diagram showing a close contact step in the method for manufacturing an organic device according to the third embodiment.

[0119] Fig.92 It is a diagram showing a vapor deposition step in the method for manufacturing an organic device according to the third embodiment. DETAILED DESCRIPTION

[0120] In the present specification and the drawings, unless otherwise specified, terms such as “substrate”, “base material”, “plate”, “sheet” or “film” indicating a material serving as a basis for a certain structure are not distinguished from each other merely based on differences in name.

[0121] In this specification and the drawings, unless otherwise specified, terms such as "parallel" and "orthogonal" or values ​​of lengths and angles that limit shapes, geometric conditions and their degrees are not limited to strict meanings, but are interpreted to include a range of degrees that can be expected to have the same function.

[0122] In this specification and the drawings, unless otherwise specified, when a certain structure such as a certain component or a certain region is “on” or “below”, “on the upper side” or “lower side”, or “above” or “below” other components or other regions or other structures, this includes the case where the certain structure is in direct contact with the other structure. In addition, this also includes the case where another structure is included between the certain structure and the other structure, that is, the case of indirect contact. In addition, unless otherwise specified, the up-down direction may be reversed in the phrases such as “on”, “upper side”, “above” or “below”, “lower side”, or “below”.

[0123] In this specification and the drawings, unless otherwise specified, the same or similar symbols are used for the same parts or parts having the same functions, and their repeated descriptions are sometimes omitted. In addition, for the sake of convenience of description, the dimensional ratio of the drawings is sometimes different from the actual ratio, and a part of the structure is sometimes omitted from the drawings.

[0124] In this specification and the drawings, unless otherwise specified, one embodiment of the present specification can be combined with other embodiments within the scope that no contradiction occurs. In addition, other embodiments can also be combined with each other within the scope that no contradiction occurs.

[0125] In this specification and the drawings, unless otherwise specified, when a plurality of steps are disclosed in a method such as a manufacturing method, other undisclosed steps may be implemented between the disclosed steps. In addition, the order of the disclosed steps is arbitrary within the range that no contradiction occurs.

[0126] In this specification and the drawings, unless otherwise specified, a numerical range represented by the symbol "to" includes the numerical values ​​placed before and after the symbol "to". For example, the numerical range defined by the expression "34 to 38 mass %" is the same as the numerical range defined by the expression "34 mass % or more and 38 mass % or less".

[0127] Hereinafter, one embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. It should be noted that the embodiment shown below is an example of the embodiment of the present disclosure, and the present disclosure is not limited to these embodiments.

[0128] A first aspect of the present disclosure relates to a method for evaluating a vapor deposition chamber of an organic device manufacturing apparatus, the method comprising the following steps:

[0129] A vapor deposition step, in the vapor deposition chamber, vapor depositing a material on a standard substrate including a standard mark through a through hole of a standard mask of a standard mask device to form a vapor deposition layer on the standard substrate;

[0130] a carrying-out step of carrying out the standard substrate on which the vapor-deposited layer is formed from the manufacturing device; and

[0131] An observation step of observing a positional relationship between the standard mark and the vapor-deposited layer on the standard substrate unloaded from the manufacturing apparatus.

[0132] In a second aspect of the present disclosure, the evaluation method of the first aspect may include a determination step of determining whether a positional relationship between the reference mark and the vapor-deposited layer satisfies a condition.

[0133] In a third aspect of the present disclosure, in the evaluation method of the second aspect, the standard substrate may include a segmented area, which is divided by performing m segmentation in a first direction and n segmentation in a second direction intersecting the first direction on the area of ​​the standard substrate formed with the vapor-deposited layer. m and n are integers of 2 or more. The determination step may determine whether the positional relationship between the standard mark and the vapor-deposited layer satisfies a condition in each segmented area.

[0134] In a fourth aspect of the present disclosure, in each evaluation method of the second aspect or the third aspect, the determination step may include a step of determining whether an outer edge of the vapor-deposited layer is located inside an outer edge of a first mark of the reference mark.

[0135] In a fifth aspect of the present disclosure, in the evaluation method of the fourth aspect, the determination step may include the step of determining whether the outer edge of the vapor-deposited layer is located outside the outer edge of a second mark located inside the first mark.

[0136] In the sixth aspect of the present disclosure, in each evaluation method of the second aspect or the third aspect, in the vapor deposition step, the vapor deposition layer may be formed on the light shielding layer constituting the standard mark. The observation step may include the following steps: irradiating light toward the standard mark from the surface of the standard substrate on the opposite side to the light shielding layer and the vapor deposition layer, and observing whether excitation light from the vapor deposition layer is generated.

[0137] In the 7th mode of the present disclosure, in each evaluation method of the above-mentioned 1st mode to the above-mentioned 6th mode, the above-mentioned standard mask of the above-mentioned standard mask device may have a standard area including the above-mentioned through holes and non-through areas, and the non-through areas are located around the above-mentioned through holes and have a size larger than the arrangement period of the above-mentioned through holes when viewed from above.

[0138] In an eighth aspect of the present disclosure, in the evaluation method of the seventh aspect, the standard mask of the standard mask device may include two or more standard areas located in a central area in a width direction of the standard mask and arranged in a length direction of the standard mask.

[0139] In the 9th mode of the present disclosure, in the evaluation method of the above-mentioned 8th mode, the above-mentioned standard mask of the above-mentioned standard mask device may have more than two of the above-mentioned through holes located in the end area adjacent to the above-mentioned central area in the width direction of the above-mentioned standard mask and arranged along the length direction and width direction of the above-mentioned standard mask.

[0140] In a tenth aspect of the present disclosure, in the evaluation method of the eighth aspect, the standard mask of the standard mask device may include a non-penetrating region located in an end region adjacent to the central region in a width direction of the standard mask.

[0141] In the 11th aspect of the present disclosure, in each evaluation method of the first aspect to the tenth aspect, the standard mask device may include a standard area including the through hole and arranged along a first direction and a second direction intersecting the first direction. The standard area may be located in a device space. The device space is a space overlapping the organic device manufactured in the vapor deposition chamber.

[0142] In the 12th aspect of the present disclosure, in each evaluation method of the above-mentioned 1st aspect to the above-mentioned 11th aspect, the above-mentioned standard mask device may include the above-mentioned through hole and the standard area arranged along the first direction and the second direction intersecting the above-mentioned first direction. The ratio of the size of the above-mentioned standard area in the above-mentioned first direction to the size of the interval between the two above-mentioned standard areas in the above-mentioned first direction may be greater than 0.1. The ratio of the size of the above-mentioned standard area in the above-mentioned second direction to the size of the interval between the two above-mentioned standard areas in the above-mentioned second direction may be greater than 0.1.

[0143] In the 13th mode of the present disclosure, in each evaluation method of the above-mentioned 1st mode to the above-mentioned 12th mode, the above-mentioned standard mask device comprises: a frame, which includes a pair of first sides extending along the first direction and a pair of second sides extending along the second direction intersecting the above-mentioned first direction; and more than two of the above-mentioned standard masks, which are fixed to the above-mentioned pair of second sides and arranged along the above-mentioned second direction.

[0144] In a 14th aspect of the present disclosure, in each of the evaluation methods of the first aspect to the 13th aspect, in the unloading step, the standard substrate may be unloaded from the manufacturing apparatus in a state where elements on the standard substrate including the organic layer are not sealed.

[0145] A fifteenth aspect of the present disclosure relates to a standard mask apparatus used in the evaluation method of the first aspect.

[0146] In the 16th mode of the present disclosure, the standard mask device of the above-mentioned 15th mode may include a standard mask having a standard area, wherein the standard area includes through holes and non-through areas, and the non-through areas are located around the through holes and have a size larger than the arrangement period of the through holes when viewed from above.

[0147] A seventeenth aspect of the present disclosure relates to a standard mask device for evaluating a vapor deposition chamber of an organic device manufacturing apparatus, wherein:

[0148] The master mask device includes a master mask including a through hole.

[0149] The standard mask device includes a standard area including the through hole and arranged along a first direction and a second direction intersecting the first direction.

[0150] The ratio of the size of the standard area in the first direction to the size of the interval between the two standard areas in the first direction is greater than or equal to 0.1.

[0151] A ratio of a size of the standard region in the second direction to a size of an interval between two of the standard regions in the second direction is greater than or equal to 0.1.

[0152] In an eighteenth aspect of the present disclosure, in the master mask apparatus of the seventeenth aspect, the master region may be located in a device space. The device space is a space overlapping with the organic device manufactured in the vapor deposition chamber.

[0153] In the 19th mode of the present disclosure, in each standard mask device of the above-mentioned 17th mode or the above-mentioned 18th mode, the above-mentioned standard mask device comprises: a frame, which includes a pair of first sides extending along the above-mentioned first direction, a pair of second sides extending along the above-mentioned second direction and an opening; and two or more of the above-mentioned standard masks, which are fixed to the above-mentioned pair of second sides and arranged along the above-mentioned second direction.

[0154] In a 20th aspect of the present disclosure, in the standard mask apparatus of the 19th aspect, the standard area may be located in a central area. The central area is a central area when the standard mask is divided into three equal parts in the second direction.

[0155] In the 21st aspect of the present disclosure, in the standard mask device of the 20th aspect, the standard area may include a non-penetrating area that is located around the through holes in the central area and has a size larger than the arrangement period of the through holes when viewed from above.

[0156] In the 22nd aspect of the present disclosure, in each standard mask device of the 19th aspect to the 21st aspect, the standard mask device may include a horizontal bar located at the opening and connected to the frame. The frame may include: a first surface of the frame, to which the standard mask is fixed; a second surface of the frame, located on the opposite side of the first surface of the frame; an inner side surface, located between the first surface of the frame and the second surface of the frame, and connected to the horizontal bar; and an outer side surface, located on the opposite side of the inner side surface. The horizontal bar may include: a first surface of the horizontal bar, located on the side of the first surface of the frame; a second surface of the horizontal bar, located on the opposite side of the first surface of the horizontal bar; and a side surface of the horizontal bar, located between the first surface of the horizontal bar and the second surface of the horizontal bar. The first surface of the frame and the first surface of the horizontal bar may be continuous.

[0157] In a 23rd aspect of the present disclosure, in the standard mask device of the 22nd aspect, the first surface of the frame and the first surface of the row bar may be located on the same plane.

[0158] In a 24th aspect of the present disclosure, in each standard mask device of the 22nd aspect or the 23rd aspect, the inner side surface and the horizontal stripe side surface may be connected via a first connecting portion having a first curvature radius when viewed from above.

[0159] In a 25th aspect of the present disclosure, in each of the standard mask devices of the 22nd aspect to the 24th aspect, the inner side surface and the second surface of the horizontal stripe may be connected via a second connecting portion having a second radius of curvature.

[0160] In a 26th aspect of the present disclosure, in each of the standard mask devices of the 22nd aspect to the 25th aspect, the horizontal stripes may include a first horizontal stripe connected to the first side.

[0161] In a 27th aspect of the present disclosure, in each of the standard mask devices of the 22nd aspect to the 25th aspect, the horizontal stripes may include a second horizontal stripe connected to the second side.

[0162] In a 28th aspect of the present disclosure, in each of the standard mask devices of the 22nd aspect to the 25th aspect, the horizontal bar may include a first horizontal bar connected to the first side, and a second horizontal bar connected to the second side. In a plan view, the horizontal bar side surface of the first horizontal bar and the horizontal bar side surface of the second horizontal bar may be connected via a third connecting portion having a third radius of curvature.

[0163] In a 29th aspect of the present disclosure, in each of the standard mask devices of the 22nd aspect to the 28th aspect, the thickness of the horizontal stripe may be smaller than the thickness of the frame.

[0164] In a 30th aspect of the present disclosure, in the standard mask device according to the 29th aspect, a ratio of the thickness of the horizontal stripe to the thickness of the frame may be 0.85 or less.

[0165] A thirty-first aspect of the present disclosure relates to a method for manufacturing a standard mask device, which is a method for manufacturing a standard mask device for a vapor deposition chamber of an organic device manufacturing apparatus, wherein:

[0166] The manufacturing method includes a fixing step of fixing the standard mask to a frame.

[0167] The frame includes a pair of first sides extending in a first direction, a pair of second sides extending in a second direction intersecting the first direction, and an opening.

[0168] The standard mask includes a pair of ends in the first direction and a through hole located between the pair of ends.

[0169] The above fixing process has the following features:

[0170] a configuration step of configuring the standard mask in such a manner that the pair of ends overlap the pair of second sides;

[0171] a mask alignment step of, after the arrangement step, applying bonding tension to the standard mask in the first direction and pressing the standard mask against the frame while adjusting the position of the standard mask relative to the frame; and

[0172] The bonding step is to bond the master mask to the frame while applying bonding tension to the master mask in the first direction and pressing the master mask against the frame after the mask alignment step.

[0173] In the 32nd mode of the present disclosure, in the manufacturing method of the above-mentioned 31st mode, the above-mentioned mask alignment process may include a first confirmation process, in which the position of the above-mentioned through hole relative to the above-mentioned frame is confirmed while applying bonding tension to the above-mentioned standard mask in the above-mentioned first direction and pressing the above-mentioned standard mask against the above-mentioned frame.

[0174] In the 33rd mode of the present disclosure, in each manufacturing method of the above-mentioned 31st mode or the above-mentioned 32nd mode, the above-mentioned mask alignment process may include a moving process, in which the above-mentioned standard mask is applied with bonding tension in the above-mentioned first direction and the above-mentioned standard mask is pressed against the above-mentioned frame, while the above-mentioned standard mask is moved in any direction within a two-dimensional plane defined by the above-mentioned first direction and the above-mentioned second direction.

[0175] In the 34th mode of the present disclosure, in each manufacturing method of the above-mentioned 31st mode to the above-mentioned 33rd mode, the above-mentioned frame may include: a frame first surface, the above-mentioned standard mask is fixed to the frame first surface; a frame second surface, which is located on the opposite side of the above-mentioned frame first surface; an inner side surface, which is located between the above-mentioned frame first surface and the above-mentioned frame second surface and faces the above-mentioned opening; and a frame wall surface, which is located at a position further to the outside than the above-mentioned inner side surface when viewed from above and is connected to the above-mentioned frame first surface. The above-mentioned frame wall surface may include a first wall surface edge, which is a position where the above-mentioned frame wall surface intersects with the above-mentioned frame first surface. In the above-mentioned mask alignment process, the above-mentioned pair of end portions may overlap with the above-mentioned first wall surface edge. The portion of the above-mentioned first wall surface edge overlapping with the above-mentioned pair of end portions may extend in a straight line along the above-mentioned second direction.

[0176] In the 35th mode of the present disclosure, in each of the manufacturing methods of the 31st mode to the 34th mode, the standard mask device may include a horizontal bar located at the opening and connected to the frame. The frame may include: a first surface of the frame, to which the standard mask is fixed; a second surface of the frame, located on the opposite side of the first surface of the frame; an inner side surface, located between the first surface of the frame and the second surface of the frame, and connected to the horizontal bar; and an outer side surface, located on the opposite side of the inner side surface. The horizontal bar may include: a first surface of the horizontal bar, located on the side of the first surface of the frame; a second surface of the horizontal bar, located on the opposite side of the first surface of the horizontal bar; and a side surface of the horizontal bar, located between the first surface of the horizontal bar and the second surface of the horizontal bar. The first surface of the frame and the first surface of the horizontal bar may be continuous.

[0177] In a 36th aspect of the present disclosure, in each of the manufacturing methods of the 31st aspect to the 35th aspect, the standard mask device may include two or more standard masks fixed to the pair of second sides and arranged along the second direction.

[0178] In the 37th aspect of the present disclosure, in the manufacturing method of the 36th aspect, the standard mask device may include a standard area including the through holes and arranged along the first direction and the second direction intersecting the first direction. The standard area may include a non-through area, which is located around the through holes in the central area and has a size larger than the arrangement period of the through holes when viewed from above. The central area may be the central area when the standard mask is divided into three equal parts in the second direction.

[0179] In the 38th mode of the present disclosure, in the manufacturing method of the above-mentioned 37th mode, the above-mentioned standard area includes a non-penetrating area, which is located around the above-mentioned through holes in the above-mentioned central area and has a size larger than the arrangement period of the above-mentioned through holes when viewed from above.

[0180] A thirty-ninth aspect of the present disclosure relates to a standard substrate used in the evaluation method of the first aspect.

[0181] A 40th aspect of the present disclosure relates to an organic device manufacturing apparatus including a vapor deposition chamber evaluated by the evaluation method of the 4th aspect, wherein:

[0182] In the determination step, it is determined that the outer edge of the vapor-deposited layer is located inside the outer edge of the first mark of the reference mark.

[0183] A 41st aspect of the present disclosure relates to an organic device including a vapor-deposited layer formed in the vapor deposition chamber of the manufacturing apparatus according to the 40th aspect.

[0184] A 42nd aspect of the present disclosure relates to a maintenance method for a vapor deposition chamber of an organic device manufacturing apparatus, comprising the following steps:

[0185] A combining step of combining a standard substrate including a standard mark and a standard mask device in the above-mentioned evaporation chamber based on a combination condition;

[0186] A vapor deposition step, in the vapor deposition chamber, vapor depositing a material on a standard substrate including a standard mark through a through hole of a standard mask of a standard mask device to form a vapor deposition layer on the standard substrate;

[0187] A carrying out step of carrying out the standard substrate on which the vapor-deposited layer is formed from the manufacturing device;

[0188] an observation step of observing a positional relationship between the standard mark and the vapor-deposited layer in the standard substrate unloaded from the manufacturing apparatus; and

[0189] The adjusting step is to adjust the combination conditions based on the positional relationship between the reference mark and the vapor deposited layer.

[0190] In the 43rd mode of the present disclosure, in the maintenance method of the above-mentioned 42nd mode, the above-mentioned adjustment process may include a magnet adjustment process, in which the magnetic force distribution of the magnet located on the surface side of the above-mentioned standard substrate opposite to the above-mentioned standard mask device or the distribution of the electrostatic force of the electrostatic suction cup is adjusted.

[0191] In the 44th mode of the present disclosure, in each maintenance method of the above-mentioned 42nd mode or the above-mentioned 43rd mode, the above-mentioned adjustment process may include a cooling plate process, in which the configuration of the cooling plate located on the surface side of the above-mentioned standard substrate on the opposite side of the above-mentioned standard mask device is adjusted.

[0192] Hereinafter, one embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. It should be noted that the embodiment shown below is an example of the embodiment of the present disclosure, and the present disclosure is not limited to these embodiments.

[0193] Figure 1A 1 is a plan view showing an example of the organic device 100 . Figure 1B Observed from IA-IA direction Figure 1A 1 is a cross-sectional view of an organic device 100. It should be noted that Figure 1A In the figure, the second electrode layer 141 and the sealing substrate 150 are omitted.

[0194] like Figure 1A and Figure 1BAs shown in FIG. 1 , the organic device 100 may include a substrate 110, a first electrode layer 120 located on a first surface 111 of the substrate 110, a first organic layer 131, a second organic layer 132, and a third organic layer 133 located on the first electrode layer 120, and a second electrode layer 141 located on the first organic layer 131, the second organic layer 132, and the third organic layer 133. In the following description, the substrate 110 on which the first electrode layer 120 is formed is also referred to as an electrode substrate 105. Figure 1A As shown by the dotted line, the first electrode layer 120 may be arranged along the first arrangement direction F1 and the second arrangement direction F2 in a plan view. Figure 1A As shown, the second array direction F2 may be a direction perpendicular to the first array direction F1. Although not shown, the second array direction F2 may not be perpendicular to the first array direction F1.

[0195] like Figure 1B As shown, the organic device 100 may include an insulating layer 160 located between two adjacent first electrode layers 120 in a plan view. The insulating layer 160 includes, for example, polyimide. The insulating layer 160 may overlap with the end of the first electrode layer 120. In this case, Figure 1A The dotted line marked with the symbol 120 in FIG. 1 represents the outer edge of the region of the first electrode layer 120 that does not overlap with the insulating layer 160. Figure 1A As shown, the first organic layer 131 , the second organic layer 132 , and the third organic layer 133 may be spread so as to surround the first electrode layer 120 in a plan view.

[0196] The substrate 110 may be a plate-shaped member having insulating properties. The substrate 110 preferably has transparency to allow light to pass therethrough. The substrate 110 is made of glass, for example.

[0197] The first electrode layer 120 includes a conductive material. For example, the first electrode layer 120 includes a metal, a conductive metal oxide, or other inorganic material. The first electrode layer 120 may include a transparent and conductive metal oxide such as indium tin oxide.

[0198] The first organic layer 131, the second organic layer 132, and the third organic layer 133 are layers containing organic semiconductor materials. When the organic device 100 is an organic EL display device, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be light-emitting layers. For example, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer, respectively. Figure 1AAs shown, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be arranged in such a manner that organic layers of the same type are not adjacent to each other in the first arrangement direction F1 and the second arrangement direction F2. For example, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be arranged in the first arrangement direction F1 and the second arrangement direction F2 in such a manner that the second organic layer 132 is located between two first organic layers 131, and the second organic layer 132 is located between two third organic layers 133.

[0199] The first organic layer 131, the second organic layer 132, and the third organic layer 133 can be formed by attaching the vapor deposition material to the electrode substrate 105 through the through holes of the mask in a vapor deposition chamber provided with a corresponding mask. In the following description, the first organic layer 131, the second organic layer 132, and the third organic layer 133 formed on the electrode substrate 105 through the through holes of the mask are also referred to as first vapor deposition layers, and are represented by reference numeral 130. One first vapor deposition layer 130 can constitute a unit structure such as one pixel of an organic EL display device.

[0200] The second electrode layer 141 may include a conductive material such as a metal. Examples of the material constituting the second electrode layer 141 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, and alloys thereof.

[0201] like Figure 1A and Figure 1B As shown, the second electrode layer 141 may be spread across two adjacent first vapor-deposited layers 130 in a plan view. The second electrode layer 141 may be formed by vapor deposition in the same manner as the first organic layer 131, the second organic layer 132, and the third organic layer 133. In the following description, the second electrode layer 141 and the like formed by vapor deposition in a manner spanning across a plurality of unit structures of the organic device 100 are also referred to as second vapor-deposited layers and are indicated by reference numeral 140.

[0202] Although not shown, the second electrode layer 141 may be formed in such a manner that a gap exists between the second electrode layers 141 located on two adjacent organic layers 131, 132, and 133. Such a second electrode layer 141 may be formed by attaching a vapor deposition material to the electrode substrate 105 through a through hole of a mask, similarly to the first organic layer 131, the second organic layer 132, and the third organic layer 133. In this case, it can be said that the second electrode layer 141 is a type of the first vapor deposition layer 130.

[0203] like Figure 1BAs shown, the organic device 100 may include a sealing substrate 150 covering the elements on the substrate 110 such as the organic layers 131, 132, and 133 on the first surface 111 side of the substrate 110. The sealing substrate 150 can prevent water vapor and the like outside the organic device 100 from entering the inside of the organic device 100. Thus, it is possible to prevent the organic layers 131, 132, and 133 and the like from being deteriorated due to moisture. The sealing substrate 150 is made of glass, for example.

[0204] Although not shown, the organic device 100 may include a hole injection layer and a hole transport layer located between the first electrode layer 120 and the organic layers 131, 132, and 133. In addition, the organic device 100 may include an electron transport layer and an electron injection layer located between the organic layers 131, 132, and 133 and the second electrode layer 141. The hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be a second vapor deposition layer 140 formed by vapor deposition in a manner spanning a plurality of unit structures of the organic device 100. Alternatively, the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be the first vapor deposition layer 130 similarly to the organic layers 131, 132, and 133.

[0205] In the method for manufacturing the organic device 100, the following may also be made: Figure 2 The organic device group 102 is shown. The organic device group 102 includes more than two organic devices 100. For example, the organic device group 102 may include organic devices 100 arranged along the first direction D1 and the second direction D2. The more than two organic devices 100 may have a common substrate 110. For example, the organic device group 102 may include a first electrode layer 120, a first organic layer 131, a second organic layer 132, a third organic layer 133, a second electrode layer 141, etc., which are located on the substrate 110 and constitute the more than two organic devices 100. By dividing the organic device group 102, one organic device 100 can be obtained.

[0206] As described later, the first direction D1 may be a direction in which the mask 50, 50A extends. As described later, the second direction D2 may be a direction in which two or more masks 50, 50A are arranged.

[0207] The dimension A1 of the organic device 100 in the first direction D1 may be, for example, greater than 20 mm, greater than 30 mm, or greater than 50 mm. The dimension A1 may be, for example, less than 100 mm, less than 200 mm, or less than 300 mm. The range of the dimension A1 may be specified by the first group consisting of 20 mm, 30 mm, and 50 mm and / or the second group consisting of 100 mm, 200 mm, and 300 mm. The range of the dimension A1 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension A1 may be specified by a combination of any two of the values ​​included in the first group. The range of the dimension A1 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 20 mm and 300 mm, between 20 mm and 200 mm, between 20 mm and 100 mm, between 20 mm and 50 mm, between 20 mm and 30 mm, between 30 mm and 300 mm, between 30 mm and 200 mm, between 30 mm and 100 mm, between 30 mm and 50 mm, between 50 mm and 300 mm, between 50 mm and 200 mm, between 50 mm and 100 mm, between 100 mm and 300 mm, between 100 mm and 200 mm, or between 200 mm and 300 mm.

[0208] The dimension A2 of the organic device 100 in the second direction D2 may be, for example, greater than 20 mm, greater than 30 mm, or greater than 50 mm. The dimension A2 may be, for example, less than 100 mm, less than 200 mm, or less than 300 mm. The range of the dimension A2 may be specified by the first group consisting of 20 mm, 30 mm, and 50 mm and / or the second group consisting of 100 mm, 200 mm, and 300 mm. The range of the dimension A2 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension A2 may be specified by a combination of any two of the values ​​included in the first group. The range of the dimension A2 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 20 mm and 300 mm, between 20 mm and 200 mm, between 20 mm and 100 mm, between 20 mm and 50 mm, between 20 mm and 30 mm, between 30 mm and 300 mm, between 30 mm and 200 mm, between 30 mm and 100 mm, between 30 mm and 50 mm, between 50 mm and 300 mm, between 50 mm and 200 mm, between 50 mm and 100 mm, between 100 mm and 300 mm, between 100 mm and 200 mm, or between 200 mm and 300 mm.

[0209] Next, the manufacturing apparatus 1 for manufacturing the organic device 100 will be described. Figure 3 It is a plan view showing an example of the manufacturing apparatus 1 .

[0210] The manufacturing apparatus 1 may include a vapor deposition chamber for forming the first vapor deposition layer 130 by vapor deposition of a material on the electrode substrate 105 through the through-holes of the mask in a vacuum atmosphere. Figure 3 As shown, the vapor deposition chamber of the manufacturing apparatus 1 may include an 11th vapor deposition chamber 11 for forming a first organic layer 131, a 12th vapor deposition chamber 12 for forming a second organic layer 132, and a 13th vapor deposition chamber 13 for forming a third organic layer 133. In the following description, the vapor deposition chamber for forming the first vapor deposition layer 130 by vapor deposition of a material on the electrode substrate 105 through the through hole of the mask is referred to as the first vapor deposition chamber and is indicated by the symbol 10.

[0211] In addition, the manufacturing apparatus 1 may include a vapor deposition chamber for forming the second vapor deposition layer 140 by vapor deposition of a material on the electrode substrate 105 in a vacuum atmosphere. Figure 3As shown, the evaporation chamber of the manufacturing device 1 may include a 21st evaporation chamber 21 for forming a hole injection layer, a 22nd evaporation chamber 22 for forming a hole transport layer, a 23rd evaporation chamber 23 for forming an electron transport layer, a 24th evaporation chamber 24 for forming an electron injection layer, and a 25th evaporation chamber 25 for forming a second electrode layer 141. In the following description, the evaporation chamber for forming the second evaporation layer 140 is referred to as the second evaporation chamber, which is represented by the symbol 20. It should be noted that, when the hole injection layer, the hole transport layer, the electron transport layer, the electron injection layer, the second electrode layer 141, etc. are the first evaporation layer 130 like the organic layers 131, 132, and 133, the evaporation chamber for forming these layers may be the first evaporation chamber 10 using a mask.

[0212] like Figure 3 As shown, the manufacturing apparatus 1 may include a substrate carrying-in chamber 31 for carrying a substrate 110 such as an electrode substrate 105 into the manufacturing apparatus 1. In addition, the manufacturing apparatus 1 may include a substrate pre-processing chamber 32 for performing pre-processing such as cleaning on the electrode substrate 105. In addition, the manufacturing apparatus 1 may include a mask storage chamber 33 for storing a mask device including a mask used in the first vapor deposition chamber 10. In addition, the manufacturing apparatus 1 may include a sealing chamber 34 for combining a sealing substrate 150 onto the substrate 110. In addition, the manufacturing apparatus 1 may include a substrate carrying-out chamber 35 for carrying out the substrate 110.

[0213] Inside the manufacturing apparatus 1 , the substrate 110 can be moved between chambers such as a vapor deposition chamber by a substrate transfer device such as a robot arm.

[0214] Next, the first vapor deposition chamber 10 will be described. Figure 4 This is a longitudinal sectional view showing an example of the first vapor deposition chamber 10 .

[0215] like Figure 4 As shown, the first evaporation chamber 10 may include an evaporation source 6, a heater 8, and a mask device 15 therein. In addition, the first evaporation chamber 10 may further include an exhaust means for making the interior of the first evaporation chamber 10 a vacuum atmosphere. The evaporation source 6 is, for example, a crucible, which contains an evaporation material 7 such as an organic light-emitting material. The heater 8 heats the evaporation source 6 to evaporate the evaporation material 7 under a vacuum atmosphere. The mask device 15 is arranged so as to face the crucible 6.

[0216] like Figure 4As shown, the mask device 15 includes at least one mask 50. The mask device 15 may include a mask support 40 that supports the mask 50. The mask support 40 may include a frame 41 including an opening 43. The mask 50 may be fixed to the frame 41 in a manner that crosses the opening 43 when viewed from above. In addition, in order to suppress the deflection of the mask 50, the frame 41 may support the mask 50 in a state in which the mask 50 is pulled in the surface direction thereof. The mask frame is also referred to as a frame.

[0217] like Figure 4 As shown, the mask device 15 is arranged in the first vapor deposition chamber 10 in such a manner that the mask 50 faces the substrate 110 as the object to which the vapor deposition material 7 is attached. The mask 50 includes a plurality of through holes 56 through which the vapor deposition material 7 flying from the vapor deposition source 6 passes. In the following description, the surface of the mask 50 located on the substrate 110 side is referred to as the first surface 551, and the surface located on the opposite side of the first surface 551 is referred to as the second surface 552. In addition, the surface of the substrate 110 located on the mask device 15 side is referred to as the first surface 111, and the surface located on the opposite side of the first surface 111 is referred to as the second surface 112.

[0218] like Figure 4 As shown, the first evaporation chamber 10 may include a substrate holder 2 for holding the substrate 110. The substrate holder 2 may be movable in the thickness direction of the substrate 110. In addition, the substrate holder 2 may be movable in the surface direction of the substrate 110. In addition, the substrate holder 2 may be configured to control the inclination of the substrate 110. For example, the substrate holder 2 may include a plurality of chucks mounted on the outer edge of the substrate 110, and each chuck may be independently movable in the thickness direction and the surface direction of the substrate 110.

[0219] like Figure 4 As shown, the first evaporation chamber 10 may include a mask holder 3 for holding the mask device 15. The mask holder 3 may be movable in the thickness direction of the mask 50. In addition, the mask holder 3 may be movable in the surface direction of the mask 50. In addition, the mask holder 3 may be configured to control the inclination of the mask 50. For example, the mask holder 3 may include a plurality of chucks mounted on the outer edge of the frame 41, and each chuck may be independently movable in the thickness direction and the surface direction of the mask 50.

[0220] By moving at least one of the substrate holder 2 and the mask holder 3 , the position of the mask 50 of the mask device 15 with respect to the substrate 110 can be adjusted.

[0221] like Figure 4As shown, the first vapor deposition chamber 10 may include a cooling plate 4, which is disposed on the second surface 112 side, and the second surface 112 is a surface of the substrate 110 on the opposite side of the mask device 15. The cooling plate 4 may have a flow channel for circulating a refrigerant inside the cooling plate 4. The cooling plate can suppress the temperature rise of the substrate 110 during the vapor deposition process.

[0222] like Figure 4 As shown, the first vapor deposition chamber 10 may include a magnet 5, which is disposed on the second surface 112 side of the substrate 110, which is the surface opposite to the mask device 15. Figure 4 As shown, the magnet 5 may also be arranged on the surface of the cooling plate 4 on the opposite side to the mask device 15. The magnet 5 can attract the mask 50 of the mask device 15 toward the substrate 110 side by magnetic force. Thus, the gap between the mask 50 and the substrate 110 can be reduced or eliminated. Thus, the generation of shadows in the evaporation process can be suppressed, and the dimensional accuracy and positional accuracy of the first evaporation layer 130 can be improved. In the present application, the shadow refers to the phenomenon that the evaporation material 7 enters the gap between the mask 50 and the substrate 110, thereby causing the thickness of the first evaporation layer 130 to become uneven. In addition, an electrostatic suction cup using electrostatic force can also be used to attract the mask 50 toward the substrate 110 side.

[0223] Figure 5 5 is a top view showing the mask device 15 when viewed from the first surface 551 side of the mask 50. Figure 5 As shown, the mask device 15 may include a plurality of masks 50. In this embodiment, the shape of each mask 50 may be a rectangle extending along the first direction D1. In the mask device 15, the plurality of masks 50 are arranged along a direction intersecting the first direction D1, and the first direction D1 is the length direction of the mask 50. Figure 5 As shown, the plurality of masks 50 may be arranged along the second direction D2, which is the width direction of the mask 50 orthogonal to the length direction of the mask 50. Each mask 50 may be fixed to the frame 41 at both ends in the length direction of the mask 50 by welding, for example.

[0224] The frame 41 may have a rectangular outline including a pair of first regions 411 extending along the first direction D1 and a pair of second regions 412 extending along the second direction D2. The first region is also referred to as a first side, and the second region is also referred to as a second side. Figure 5 As shown, the second side 412 of the ear portion 51 to which the mask 50 is fixed may be longer than the first side 411 .

[0225] The mask device 15 may include a component fixed to the frame 41 and partially overlapping the mask 50 in the thickness direction of the mask 50. Figure 5As shown, the mask device 15 may include a support member 42 that supports the mask 50 from below. The support member 42 may be in contact with the mask 50. Alternatively, the support member 42 may indirectly support the mask 50 from below via other members. Although not shown in the figure, the mask device 15 may include a member that is fixed to the frame 41 and overlaps the gap between two adjacent masks 50. The member such as the support member that is located in the opening 43 and connected to the frame 41 is also called a horizontal bar. Figure 5 In the illustrated example, the horizontal bar 42 includes a first horizontal bar 421 connected to the first side 411. The first horizontal bar 421 extends along a second direction D2 intersecting the first direction D1.

[0226] like Figure 5 As shown, the mask 50 may include a pair of ears 51 overlapping the frame 41, and a middle portion 52 located between the ears 51. The ears are also referred to as ends. The middle portion 52 may include at least one effective area 53, and a peripheral area 54 located around the effective area 53. Figure 5 In the illustrated example, the intermediate portion 52 includes a plurality of effective regions 53 arranged at predetermined intervals along the first direction D1 . The peripheral region 54 surrounds the plurality of effective regions 53 .

[0227] Figure 6 1 is a top view showing an example of the middle portion 52 of the mask 50. The effective region 53 of the middle portion 52 may include a plurality of through holes 56. The vapor deposition material that is attached to the substrate 110 through each of the through holes 56 of the middle portion 52 may constitute the first vapor deposition layer 130 on the substrate 110. In this case, the effective region 53 includes a group of through holes 56 that are regularly arranged at a period corresponding to the first vapor deposition layer 130 when viewed from above.

[0228] like Figure 6 As shown, the peripheral region 54 may not include the through holes 56. Although not shown, the peripheral region 54 may also include the through holes 56. In this case, the through holes 56 located in the peripheral region 54 may be arranged non-periodically when viewed from above. The through holes 56 located in the peripheral region 54 may also be regularly arranged with a period that does not correspond to the first vapor-deposited layer 130.

[0229] When a display device such as an organic EL display device is manufactured using the mask 50, one effective area 53 corresponds to a display area of ​​one organic EL display device. Figure 5 The mask device 15 shown can perform repeated evaporation of the organic EL display device in sections. It should be noted that there is also a case where one effective area 53 corresponds to multiple display areas. In addition, although not shown in the figure, multiple effective areas 53 can be arranged at predetermined intervals in the width direction of the mask 50.

[0230] The effective area 53 may have a rectangular outline in a plan view. In addition, the effective area 53 may have an outline of various shapes according to the shape of the display area of ​​the organic EL display device. For example, the effective area 53 may have a circular outline.

[0231] Figure 7 is a cross-sectional view showing an example of the mask 50. Figure 7 As shown in FIG. 1 , the mask 50 includes a metal plate 55 and a through hole 56 penetrating from a first surface 551 to a second surface 552 of the metal plate 55. The through hole 56 may include a first recess 561 located on the first surface 551 side of the metal plate 55, and a second recess 562 located on the second surface 552 side and connected to the first recess 561. The second recess 562 may have a size r2 larger than a size r1 of the first recess 561 in a plan view. The first recess 561 and the second recess 562 may be formed by processing the metal plate 55 from the first surface 551 side and the second surface 552 side using etching, laser, or the like.

[0232] The first recessed portion 561 and the second recessed portion 562 are connected via a circumferential connecting portion 563. The connecting portion 563 can define a through portion 564 where the opening area of ​​the through hole 56 is the smallest when the mask 50 is viewed from above.

[0233] The dimension r of the through portion 564 may be, for example, greater than 10 μm, greater than 15 μm, greater than 20 μm, or greater than 25 μm. In addition, the dimension r of the through portion 564 may be, for example, less than 40 μm, less than 45 μm, less than 50 μm, or less than 55 μm. The range of the dimension r of the through portion 564 may be specified by the first group consisting of 10 μm, 15 μm, 20 μm, and 25 μm and / or the second group consisting of 40 μm, 45 μm, 50 μm, and 55 μm. The range of the dimension r of the through portion 564 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension r of the through portion 564 may be specified by a combination of any two of the values ​​included in the first group. The range of the dimension r of the through portion 564 may be specified by a combination of any two of the values ​​included in the second group. For example, it may be greater than 10 μm and less than 55 μm, greater than 10 μm and less than 50 μm, greater than 10 μm and less than 45 μm, greater than 10 μm and less than 40 μm, greater than 10 μm and less than 25 μm, greater than 10 μm and less than 20 μm, greater than 10 μm and less than 15 μm, greater than 15 μm and less than 55 μm, greater than 15 μm and less than 50 μm, greater than 15 μm and less than 45 μm, greater than 15 μm and less than 40 μm, greater than 15 μm and less than 25 μm, greater than 15 μm and less than 20 μm, or greater than 20 μm and less than 55 μm. It can be above 20μm and below 50μm, it can be above 20μm and below 45μm, it can be above 20μm and below 40μm, it can be above 20μm and below 25μm, it can be above 25μm and below 55μm, it can be above 25μm and below 50μm, it can be above 25μm and below 45μm, it can be above 25μm and below 40μm, it can be above 40μm and below 55μm, it can be above 40μm and below 50μm, it can be above 40μm and below 45μm, it can be above 45μm and below 55μm, it can be above 45μm and below 50μm, it can be above 50μm and below 55μm.

[0234] The size r of the through portion 564 can be defined by the light passing through the through hole 56. For example, parallel light is incident on one of the first surface 551 or the second surface 552 of the mask 50 along the normal direction of the mask 50, passes through the through hole 56, and then exits from the other of the first surface 551 or the second surface 552. Then, the size of the area occupied by the exiting light in the surface direction of the mask 50 is used as the size r of the through portion 564.

[0235] It should be noted that in Figure 7, an example is shown in which the second surface 552 of the metal plate 55 remains between two adjacent second recesses 562, but the present invention is not limited thereto. Although not shown, etching may be performed in a manner that two adjacent second recesses 562 are connected. That is, there may be a portion in which the second surface 552 of the metal plate 55 does not remain between two adjacent second recesses 562.

[0236] Next, the materials of the mask 50 and the frame 41 of the mask device 15 are described. The main material of the mask 50 and the frame 41 can be an iron alloy containing nickel. In addition to nickel, the iron alloy can further contain cobalt. For example, as the material of the metal plate 55 of the mask 50, an iron alloy in which the total content of nickel and cobalt is greater than 28% by mass and less than 54% by mass, and the content of cobalt is greater than 0% by mass and less than 6% by mass can be used. As a result, the difference between the thermal expansion coefficient of the mask 50 and the frame 41 and the thermal expansion coefficient of the substrate 110 containing glass can be reduced. Therefore, the dimensional accuracy and positional accuracy of the first vapor-deposited layer 130 formed on the substrate 110 can be suppressed from being reduced due to the thermal expansion of the mask 50, the frame 41, the substrate 110, etc.

[0237] The content of nickel and cobalt in the metal plate 55 can be 28% by mass or more and 38% by mass or less in total. In this case, as specific examples of the iron alloy containing nickel or nickel and cobalt, an Invar alloy material, a super Invar alloy material, a super Invar alloy material, etc. can be cited. The Invar alloy material is an iron alloy containing 34% by mass or more and 38% by mass of nickel, and the balance is iron and inevitable impurities. The super Invar alloy material is an iron alloy containing 30% by mass or more and 34% by mass of nickel and cobalt, and the balance is iron and inevitable impurities. The super Invar alloy material is an iron alloy containing 28% by mass or more and 34% by mass of nickel, 2% by mass or more and 7% by mass of cobalt, 0.1% by mass or more and 1.0% by mass of manganese, 0.10% by mass or less of silicon, 0.01% by mass or less of carbon, and the balance is iron and inevitable impurities.

[0238] The total content of nickel and cobalt in the metal plate 55 may be 38 mass % or more and 54 mass % or less. In this case, as a specific example of the iron alloy containing nickel or nickel and cobalt, a low thermal expansion Fe-Ni plating alloy or the like can be cited. The low thermal expansion Fe-Ni plating alloy is an iron alloy containing 38 mass % or more and 54 mass % or less of nickel, and the balance being iron and inevitable impurities.

[0239] It should be noted that, in the evaporation process, when the temperatures of the mask 50, the frame 41, and the substrate 110 do not reach a high temperature, it is not necessary to make the thermal expansion coefficients of the mask 50 and the frame 41 equal to the thermal expansion coefficient of the substrate 110. In this case, as a material constituting the mask 50, a material other than the above-mentioned iron alloy can be used. For example, an iron alloy other than the above-mentioned iron alloy containing nickel, such as an iron alloy containing chromium, can be used. As an iron alloy containing chromium, for example, an iron alloy called so-called stainless steel can be used. In addition, an alloy other than an iron alloy, such as nickel or a nickel-cobalt alloy, can also be used.

[0240] The thickness T of the metal plate 55 of the mask 50 may be, for example, 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more. In addition, the thickness T of the metal plate 55 may be, for example, 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the thickness T of the metal plate 55 may be specified by the first group consisting of 8 μm, 10 μm, 13 μm, and 15 μm and / or the second group consisting of 20 μm, 30 μm, 40 μm, and 50 μm. The range of the thickness T of the metal plate 55 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T of the metal plate 55 may be specified by a combination of any two of the values ​​included in the first group. The range of the thickness T of the metal plate 55 may be specified by a combination of any two of the values ​​included in the second group. For example, it may be 8 μm to 50 μm, 8 μm to 40 μm, 8 μm to 30 μm, 8 μm to 20 μm, 8 μm to 15 μm, 8 μm to 13 μm, 8 μm to 10 μm, 10 μm to 50 μm, 10 μm to 40 μm, 10 μm to 30 μm, 10 μm to 20 μm, 10 μm to 15 μm, 10 μm to 13 μm, 13 μm to 50 μm, or more. It can be above 13μm and below 40μm, can be above 13μm and below 30μm, can be above 13μm and below 20μm, can be above 13μm and below 15μm, can be above 15μm and below 50μm, can be above 15μm and below 40μm, can be above 15μm and below 30μm, can be above 15μm and below 20μm, can be above 20μm and below 50μm, can be above 20μm and below 40μm, can be above 20μm and below 30μm, can be above 30μm and below 50μm, can be above 30μm and below 40μm, can be above 40μm and below 50μm.

[0241] By setting the thickness T of the metal plate 55 to be 50 μm or less, the proportion of the vapor deposition material 7 that is caught on the wall surface of the through hole 56 before passing through the through hole 56 can be reduced. This can improve the utilization efficiency of the vapor deposition material 7. In addition, by setting the thickness T of the metal plate 55 to be 8 μm or more, the strength of the mask 50 can be ensured, and damage or deformation of the mask 50 can be suppressed.

[0242] A contact type measurement method was used as a method for measuring the thickness of the metal plate 55. As the contact type measurement method, a length gauge "MT1271" of HEIDENHAIM-METRO manufactured by HEIDENHAIN Corporation having a ball bushing guide plunger was used.

[0243] Next, an example of a method for manufacturing the organic device 100 using the manufacturing apparatus 1 will be described.

[0244] First, the substrate 110 formed with the first electrode layer 120 and the insulating layer 160 is carried into the manufacturing device 1 through the substrate carrying chamber 31. Then, the substrate 110 is subjected to pretreatment such as dry cleaning in the substrate pretreatment chamber 32. Dry cleaning is, for example, ultraviolet irradiation treatment, plasma treatment, etc. In addition, a hole injection layer can be formed on the first electrode layer 120 in the 21st evaporation chamber 21. In addition, a hole transport layer can be formed on the hole injection layer in the 22nd evaporation chamber 22.

[0245] Next, a vapor deposition process for forming the first organic layer 131 is performed in the 11th vapor deposition chamber 11. First, a mask device 15 including a mask 50 corresponding to the first organic layer 131 is prepared. Next, the mask device 15 is placed above the vapor deposition source 6 using the mask holder 3.

[0246] Then, the substrate 110 is placed opposite to the mask 50 of the mask device 15 using the substrate holder 2. Then, the substrate holder 2 is moved in the surface direction of the substrate 110 to adjust the position of the substrate 110 relative to the mask 50. For example, the substrate 110 is moved in the surface direction so that the alignment mark of the mask 50 or the frame 41 overlaps with the alignment mark of the substrate 110. When adjusting the position of the substrate 110 in the surface direction, the first surface 111 of the substrate 110 may not be in contact with the first surface 551 of the mask 50. In this case, after the position of the substrate 110 in the surface direction is adjusted, the substrate holder 2 is moved in the thickness direction of the substrate 110 so that the first surface 111 of the substrate 110 is in contact with the first surface 551 of the mask 50.

[0247] Next, the cooling plate 4 may be moved toward the substrate 110 and disposed on the second surface 112 of the substrate 110. In addition, the magnet 5 may be disposed on the second surface 112 of the substrate 110. Thus, the mask 50 may be attracted toward the substrate 110 by magnetic force.

[0248] Next, the vapor deposition material 7 is evaporated and flies toward the substrate 110. Part of the vapor deposition material 7 that passes through the through holes 56 of the mask 50 is attached to the substrate 110 in a pattern corresponding to the through holes 56. Thus, the first organic layer 131 can be formed on the substrate 110.

[0249] Next, a vapor deposition process for forming the second organic layer 132 may be performed in the twelfth vapor deposition chamber 12. In addition, a vapor deposition process for forming the third organic layer 133 may be performed in the thirteenth vapor deposition chamber 13. The vapor deposition process for the second organic layer 132 and the third organic layer 133 is the same as the vapor deposition process for the first organic layer 131, and thus the description thereof is omitted.

[0250] Next, in the 23rd vapor deposition chamber 23, an electron transport layer may be formed on the organic layers 131, 132, and 133. In addition, in the 24th vapor deposition chamber 24, an electron injection layer may be formed on the electron transport layer.

[0251] Next, the second electrode layer 141 is formed in the 25th vapor deposition chamber 25. Next, a sealing step of combining the sealing substrate 150 and the substrate 110 is performed in the sealing chamber 34. Then, the substrate 110 is carried out of the manufacturing apparatus 1 to the outside through the substrate carrying-out chamber 35. In this way, the organic device 100 can be manufactured.

[0252] Then, an inspection process of the organic device 100 may be performed. For example, by applying a voltage between the first electrode layer 120 and the second electrode layer 141 of the organic device 100, it is possible to inspect whether the organic layers 131, 132, 133 and the like are properly formed. For example, when the organic layers 131, 132, 133 are light-emitting layers, it is possible to determine whether the organic device 100 is a good product based on whether each pixel including the organic layers 131, 132, 133 emits light properly.

[0253] When the organic device 100 does not meet the desired specifications, it is necessary to investigate the cause. The following factors may be considered as factors that may affect the quality of the organic device 100 in the manufacturing process of the organic device 100, for example.

[0254] (1) Accuracy of the position of the first electrode layer 120 on the substrate 110

[0255] (2) Accuracy of the position of the through hole 56 of the mask 50 of the mask device 15

[0256] (3) Accuracy of the relative position between the mask device 15 and the electrode substrate 105

[0257] (4) Thermal expansion of the substrate 110 during the vapor deposition process

[0258] (5) Thermal expansion of the mask device 15 during the vapor deposition process

[0259] (6) Deformation such as warping of substrate 110

[0260] (7) Deformation such as warping of the mask device 15

[0261] (1), (4) and (6) are factors based on the characteristics of the electrode substrate 105 including the substrate 110 and the first electrode layer 120. (2), (5) and (7) are factors based on the characteristics of the mask device 15. The relative position of the mask device 15 and the electrode substrate 105 in (3) is adjusted by moving the substrate holder 2 in the first vapor deposition chamber 10 of the manufacturing device 1. Therefore, it can be said that (3) is a factor based on the characteristics of the first vapor deposition chamber 10.

[0262] In this embodiment, a method of performing a vapor deposition process in the first vapor deposition chamber 10 of the manufacturing apparatus 1 using the standard substrate 60 and the standard mask device 15A and inspecting whether the first vapor deposition layer 130 is properly formed is proposed. Figure 8 As shown, in the first deposition chamber 10 , a material is deposited on a standard substrate 60 through the through-holes 56 of a standard mask 50A of a standard mask device 15A to form a first deposition layer 130 , and whether the position and size of the first deposition layer 130 are appropriate is inspected.

[0263] The standard substrate 60 includes a substrate 110 and a pattern for verifying the accuracy of the position and size of the first vapor deposition layer 130. The standard mask device 15A includes a frame 41 and a standard mask 50A held by the frame 41. As the standard substrate 60 and the standard mask device 15A, a substrate and a device that ensure that they function properly in the vapor deposition process are used. For example, a standard substrate 60 and a standard mask device 15A are used that have the effect of forming a proper first vapor deposition layer 130 in a first vapor deposition chamber 10 different from the first vapor deposition chamber 10 to be inspected. As a result, the possibility of the first vapor deposition layer 130 being defective in position or size caused by the standard substrate 60 and the standard mask device 15A can be reduced. For example, a situation in which (1), (4) and (6) and (2), (5) and (7) among the above-mentioned factors (1) to (7) can be ignored can be produced. Therefore, by performing the vapor deposition process using the standard substrate 60 and the standard mask apparatus 15A, the characteristics of each of the first vapor deposition chambers 10 included in the manufacturing apparatus 1 can be individually evaluated.

[0264] Next, the standard substrate 60 will be described in detail. Fig.9A 1 is a plan view showing an example of the standard substrate 60. It should be noted that, among the components of the standard substrate 60, the same components as those of the electrode substrate 105 are denoted by the same reference numerals and detailed description thereof may be omitted.

[0265] The standard substrate 60 may include a substrate 110 and a standard marking area 62 located on a first surface 111 of the substrate 110. Fig.9A In FIG. 5 , reference numeral 50A shows the outline of the standard mask 50A when the standard substrate 60 is combined with the standard mask device 15A. The standard substrate 60 may include two or more standard mark regions 62 arranged along the first direction D1 in which the standard mask 50A extends.

[0266] like Fig.9A As shown, it is preferred to configure the standard mark area 62 in a wide area of ​​the substrate 110. Fig.9A In the figure, the area surrounded by the dotted line and marked with the symbol R1 represents the range where the standard mark area 62 exists in the substrate 110. The existence range R1 of the standard mark area 62 is defined by the largest rectangle including the sides extending along the first direction D1 and the second direction D2 and connected to the standard mark area 62. The larger the ratio of the area of ​​the existence range R1 of the standard mark area 62 to the area of ​​the substrate 110, the greater the evaluation that the characteristics of the first vapor deposition chamber 10 cover a wider area.

[0267] The ratio of the area of ​​the existence range R1 of the standard mark region 62 to the area of ​​the substrate 110 may be, for example, greater than 0.50, greater than 0.70, greater than 0.75, or greater than 0.80. In addition, the ratio of the area of ​​the existence range R1 of the standard mark region 62 to the area of ​​the substrate 110 may be, for example, less than 0.85, less than 0.90, less than 0.95, or less than 0.98. The range of the ratio of the area of ​​the existence range R1 of the standard mark region 62 to the area of ​​the substrate 110 may be defined by the first group consisting of 0.50, 0.70, 0.75, and 0.80 and / or the second group consisting of 0.85, 0.90, 0.95, and 0.98. The range of the ratio of the area of ​​the existence range R1 of the standard mark region 62 to the area of ​​the substrate 110 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the ratio of the area of ​​the existence range R1 of the standard mark region 62 to the area of ​​the substrate 110 can be specified by a combination of any two of the values ​​included in the above-mentioned first group. The range of the ratio of the area of ​​the existence range R1 of the standard mark region 62 to the area of ​​the substrate 110 can be specified by a combination of any two of the values ​​included in the above-mentioned second group. For example, it can be greater than 0.50 and less than 0.98, greater than 0.50 and less than 0.95, greater than 0.50 and less than 0.90, greater than 0.50 and less than 0.85, greater than 0.50 and less than 0.80, greater than 0.50 and less than 0.75, greater than 0.50 and less than 0.70, greater than 0.70 and less than 0.98, greater than 0.70 and less than 0.95, greater than 0.70 and less than 0.90, greater than 0.70 and less than 0.85, greater than 0.70 and less than 0.80, greater than 0.70 and less than 0.75, and greater than 0.98. It can be above 0.75 and below 0.95, it can be above 0.75 and below 0.90, it can be above 0.75 and below 0.85, it can be above 0.75 and below 0.80, it can be above 0.80 and below 0.98, it can be above 0.80 and below 0.95, it can be above 0.80 and below 0.90, it can be above 0.80 and below 0.85, it can be above 0.85 and below 0.98, it can be above 0.85 and below 0.95, it can be above 0.85 and below 0.90, it can be above 0.90 and below 0.98, it can be above 0.90 and below 0.95, it can be above 0.95 and below 0.98.

[0268] like Fig.9AAs shown, the standard substrate 60 may include an alignment mark 68. The alignment mark 68 may be used to adjust the position of the substrate 110 of the standard substrate 60 relative to the standard mask device 15A. The alignment mark 68 of the standard substrate 60 may be located outside the existence range R1 of the standard mark area 62.

[0269] Fig. 9B 1 is a top view showing an example of the relationship between the standard substrate 60 and the device space 103. The device space 103 is a space overlapping the organic device 100 manufactured in the first deposition chamber 10 in the normal direction of the first surface 551 of the mask 50. Fig. 9B In FIG. 6 , the dotted line labeled with the symbol 103 represents the outline of the device space 103 projected onto the standard substrate 60 .

[0270] like Fig. 9B As shown, the standard mark area 62 may be located in the device space 103. Thus, the characteristics of the first vapor deposition chamber 10 in the device space 103 can be evaluated.

[0271] exist Fig. 9B In FIG. 1 , symbol V1 represents the interval between two standard mark regions 62 in the first direction D1 (hereinafter also referred to as the first interval). The first interval V1 may be smaller than the dimension A1 of the organic device 100 in the first direction D1. For example, the ratio of the first interval V1 to the dimension A1, i.e., V1 / A1, may be less than 0.9, less than 0.8, or less than 0.7. Thus, in the first direction D1, the standard mark region 62 easily overlaps with the device space 103.

[0272] The first interval V1 may be, for example, greater than 10 mm, greater than 15 mm, or greater than 25 mm. The first interval V1 may be, for example, less than 50 mm, less than 100 mm, or less than 150 mm. The range of the first interval V1 may be specified by the first group consisting of 10 mm, 15 mm, and 25 mm and / or the second group consisting of 50 mm, 100 mm, and 150 mm. The range of the first interval V1 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the first interval V1 may be specified by a combination of any two of the values ​​included in the first group. The range of the first interval V1 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 10 mm and 150 mm, between 10 mm and 100 mm, between 10 mm and 50 mm, between 10 mm and 25 mm, between 10 mm and 15 mm, between 15 mm and 150 mm, between 15 mm and 100 mm, between 15 mm and 50 mm, between 15 mm and 25 mm, between 25 mm and 150 mm, between 25 mm and 100 mm, between 25 mm and 50 mm, between 50 mm and 150 mm, between 50 mm and 100 mm, or between 100 mm and 150 mm.

[0273] exist Fig. 9B In FIG. 1 , symbol U1 represents the size of standard mark area 62 in first direction D1 (hereinafter also referred to as first size). The ratio of first size U1 to first interval V1 is preferably greater than a certain value. Thus, standard mark area 62 easily overlaps device space 103 in first direction D1.

[0274] The ratio of the first dimension U1 to the first interval V1, i.e., U1 / V1, can be, for example, greater than 0.005, greater than 0.1, greater than 0.2, or greater than 0.3. U1 / V1 can be, for example, less than 0.5, less than 0.6, less than 0.8, or less than 1.0. The range of U1 / V1 can be specified by the first group consisting of 0.005, 0.1, 0.2, and 0.3 and / or the second group consisting of 0.5, 0.6, 0.8, and 1.0. The range of U1 / V1 can be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of U1 / V1 can be specified by a combination of any two of the values ​​included in the first group. The range of U1 / V1 can be specified by a combination of any two of the values ​​included in the second group. For example, it may be 0.005 or more and 1.0 or less, 0.005 or more and 0.8 or less, 0.005 or more and 0.6 or less, 0.005 or more and 0.5 or less, 0.005 or more and 0.3 or less, 0.005 or more and 0.2 or less, 0.005 or more and 0.1 or less, 0.1 or more and 1.0 or less, 0.1 or more and 0.8 or less, 0.1 or more and 0.6 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, or 0. 2 or more and 1.0 or less, can be 0.2 or more and 0.8 or less, can be 0.2 or more and 0.6 or less, can be 0.2 or more and 0.5 or less, can be 0.2 or more and 0.3 or less, can be 0.3 or more and 1.0 or less, can be 0.3 or more and 0.8 or less, can be 0.3 or more and 0.6 or less, can be 0.3 or more and 0.5 or less, can be 0.5 or more and 1.0 or less, can be 0.5 or more and 0.8 or less, can be 0.5 or more and 0.6 or less, can be 0.6 or more and 1.0 or less, can be 0.6 or more and 0.8 or less, can be 0.8 or more and 1.0 or less.

[0275] exist Fig. 9B In FIG. 1 , symbol V2 represents the interval between two standard mark areas 62 in the second direction D2 (hereinafter also referred to as the second interval). The second interval V2 may be smaller than the dimension A2 of the organic device 100 in the second direction D2. For example, the ratio of the second interval V2 to the dimension A2, i.e., V2 / A2, may be less than 0.9, less than 0.8, or less than 0.7. Thus, in the second direction D2, the standard mark area 62 easily overlaps with the device space 103.

[0276] The second interval V2 may be, for example, greater than 10 mm, greater than 15 mm, or greater than 25 mm. The second interval V2 may be, for example, less than 50 mm, less than 100 mm, or less than 150 mm. The range of the second interval V2 may be specified by the first group consisting of 10 mm, 15 mm, and 25 mm and / or the second group consisting of 50 mm, 100 mm, and 150 mm. The range of the second interval V2 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the second interval V2 may be specified by a combination of any two of the values ​​included in the first group. The range of the second interval V2 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 10 mm and 150 mm, between 10 mm and 100 mm, between 10 mm and 50 mm, between 10 mm and 25 mm, between 10 mm and 15 mm, between 15 mm and 150 mm, between 15 mm and 100 mm, between 15 mm and 50 mm, between 15 mm and 25 mm, between 25 mm and 150 mm, between 25 mm and 100 mm, between 25 mm and 50 mm, between 50 mm and 150 mm, between 50 mm and 100 mm, or between 100 mm and 150 mm.

[0277] exist Fig. 9B In FIG. 1 , symbol U2 represents the size of the standard mark area 62 in the second direction D2 (hereinafter also referred to as the second size). The ratio of the second size U2 to the second interval V2 is preferably greater than a certain value. Thus, in the second direction D2, the standard mark area 62 easily overlaps with the device space 103.

[0278] The ratio of the second dimension U2 to the second interval V2, i.e., U2 / V2, can be, for example, greater than 0.005, greater than 0.1, greater than 0.2, or greater than 0.3. U2 / V2 can be, for example, less than 0.5, less than 0.6, less than 0.8, or less than 1.0. The range of U2 / V2 can be specified by the first group consisting of 0.005, 0.1, 0.2 and 0.3 and / or the second group consisting of 0.5, 0.6, 0.8 and 1.0. The range of U2 / V2 can be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of U2 / V2 can be specified by a combination of any two of the values ​​included in the first group. The range of U2 / V2 can be specified by a combination of any two of the values ​​included in the second group. For example, it may be 0.005 or more and 1.0 or less, 0.005 or more and 0.8 or less, 0.005 or more and 0.6 or less, 0.005 or more and 0.5 or less, 0.005 or more and 0.3 or less, 0.005 or more and 0.2 or less, 0.005 or more and 0.1 or less, 0.1 or more and 1.0 or less, 0.1 or more and 0.8 or less, 0.1 or more and 0.6 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, or 0. 2 or more and 1.0 or less, can be 0.2 or more and 0.8 or less, can be 0.2 or more and 0.6 or less, can be 0.2 or more and 0.5 or less, can be 0.2 or more and 0.3 or less, can be 0.3 or more and 1.0 or less, can be 0.3 or more and 0.8 or less, can be 0.3 or more and 0.6 or less, can be 0.3 or more and 0.5 or less, can be 0.5 or more and 1.0 or less, can be 0.5 or more and 0.8 or less, can be 0.5 or more and 0.6 or less, can be 0.6 or more and 1.0 or less, can be 0.6 or more and 0.8 or less, can be 0.8 or more and 1.0 or less.

[0279] The substrate 110 may include an insulator such as glass. The thickness of the substrate 110 may be, for example, greater than 0.1 mm, greater than 0.3 mm, greater than 0.4 mm, or greater than 0.5 mm. In addition, the thickness of the substrate 110 may be, for example, less than 0.6 mm, less than 0.8 mm, less than 1.0 mm, or less than 2.0 mm. The range of the thickness of the substrate 110 may be specified by the first group consisting of 0.1 mm, 0.3 mm, 0.4 mm, and 0.5 mm and / or the second group consisting of 0.6 mm, 0.8 mm, 1.0 mm, and 2.0 mm. The range of the thickness of the substrate 110 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness of the substrate 110 may be specified by a combination of any two of the values ​​included in the first group. The range of the thickness of the substrate 110 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 0.1 mm and 2.0 mm, between 0.1 mm and 1.0 mm, between 0.1 mm and 0.8 mm, between 0.1 mm and 0.6 mm, between 0.1 mm and 0.5 mm, between 0.1 mm and 0.4 mm, between 0.1 mm and 0.3 mm, between 0.3 mm and 2.0 mm, between 0.3 mm and 1.0 mm, between 0.3 mm and 0.8 mm, between 0.3 mm and 0.6 mm, between 0.3 mm and 0.5 mm, between 0.3 mm and 0.4 mm, between 0.4 mm and 2.0 mm or more. It can be above 0.4mm and below 1.0mm, above 0.4mm and below 0.8mm, above 0.4mm and below 0.6mm, above 0.4mm and below 0.5mm, above 0.5mm and below 2.0mm, above 0.5mm and below 1.0mm, above 0.5mm and below 0.8mm, above 0.5mm and below 0.6mm, above 0.6mm and below 2.0mm, above 0.6mm and below 1.0mm, above 0.6mm and below 0.8mm, above 0.8mm and below 2.0mm, above 0.8mm and below 1.0mm, or above 1.0mm and below 2.0mm.

[0280] Fig.10 Yes Fig.9A The standard substrate 60 is a top view showing an enlarged view of the area surrounded by the dot-dash line and marked with the symbol X. The standard mark area 62 includes at least one standard mark 63. The standard mark 63 is a mark indicating the area where the first vapor deposition layer 130 should be formed in the vapor deposition process. Fig.10As shown, the standard mark area 62 may include a plurality of standard marks 63. In addition, the plurality of standard marks 63 may be periodically arranged at certain intervals. Fig.10 As shown, the standard marks 63 can be arranged with an arrangement period P1 in one direction and an arrangement period P2 in another direction. The direction of the arrangement period P1 can be the length direction of the standard mask 50A, that is, the first direction D1. In addition, the direction of the arrangement period P2 can be the width direction of the standard mask 50A, that is, the second direction D2.

[0281] The arrangement period of the standard marks 63 such as the arrangement period P1, P2 can be the same as the arrangement period of the through holes 56 of the mask 50 used in the manufacture of the organic device 100. The arrangement period of the standard marks 63 can be, for example, 30 μm or more, 50 μm or more, 70 μm or more, or 100 μm or more. In addition, the arrangement period of the standard marks 63 can be, for example, 150 μm or less, 200 μm or less, 300 μm or less, or 400 μm or less. The range of the arrangement period of the standard marks 63 can be specified by the first group consisting of 30 μm, 50 μm, 70 μm, and 100 μm and / or the second group consisting of 150 μm, 200 μm, 300 μm, and 400 μm. The range of the arrangement period of the standard marks 63 can be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the arrangement period of the standard mark 63 can be specified by a combination of any two of the values ​​included in the above-mentioned first group. The range of the arrangement period of the standard mark 63 can be specified by a combination of any two of the values ​​included in the above-mentioned second group. For example, it can be between 30 μm and 400 μm, between 30 μm and 300 μm, between 30 μm and 200 μm, between 30 μm and 150 μm, between 30 μm and 100 μm, between 30 μm and 70 μm, between 30 μm and 50 μm, between 50 μm and 400 μm, between 50 μm and 300 μm, between 50 μm and 200 μm, between 50 μm and 150 μm, between 50 μm and 100 μm, between 50 μm and 70 μm, between 70 μm and 400 μm, between 70 μm and 700 μm, between 70 μm and 400 μm, between 70 μm and 700 μm. μm or more and less than 300μm, may be between 70μm and 200μm, may be between 70μm and 150μm, may be between 70μm and 100μm, may be between 100μm and 400μm, may be between 100μm and 300μm, may be between 100μm and 200μm, may be between 100μm and 150μm, may be between 150μm and 400μm, may be between 150μm and 300μm, may be between 150μm and 200μm, may be between 200μm and 400μm, may be between 200μm and 300μm, may be between 300μm and 400μm.

[0282] like Fig.10As shown, the first dimension U1 may be the dimension of the region where the group of standard marks 63 is located in the first direction D1. The first interval V1 may be the interval between the groups of two standard marks 63 in the first direction D1. The second dimension U2 may be the dimension of the region where the group of standard marks 63 is located in the second direction D2. The second interval V2 may be the interval between the groups of two standard marks 63 in the second direction D2.

[0283] like Fig.10 As shown, the standard mark 63 may include a first mark 64. The first mark 64 shows the outer edge of the region where the first vapor deposition layer 130 should be formed. The outer edge of the first mark 64 when viewed from above may have a shape corresponding to the through hole 56 of the standard mask 50A. For example, the outer edge of the first mark 64 when viewed from above may have a quadrilateral, a circle, or the like.

[0284] like Fig.10 As shown, the standard mark 63 may include a second mark 65 located further inside than the first mark 64. The second mark 65 indicates the minimum allowable size of the first vapor-deposited layer 130. The second mark 65 may have a shape similar to that of the first mark 64.

[0285] Fig.11A and Fig. 11B It is a top view and a cross-sectional view showing an example of a standard mark 63 in an enlarged manner. The shape of the first mark 64 can be defined by a linear element having a first width W1. Similarly, the shape of the second mark 65 can also be defined by a linear element having a second width W2. The first width W1 and the second width W2 can be the same or different.

[0286] exist Fig.11A and Fig. 11B In FIG. 1 , symbol M3 indicates the size of the second mark 65 in the arrangement direction of the standard mark 63. In addition, symbol M4 indicates the shortest distance between the first outer edge 641 of the first mark 64 and the second outer edge 651 of the second mark 65 when viewed from above. The size M3 of the standard mark 63 can be Figure 1B The size M1 of the region of the first electrode layer 120 that does not overlap with the insulating layer 160 shown in FIG. Figure 1B The insulating layer 160 shown corresponds to a dimension M2 in the arrangement direction of the first vapor-deposited layers 130 .

[0287] Figure 1B The size M2 is determined based on, for example, the allowable value of the positional deviation of the first vapor-deposited layer 130. When the pixel density of the organic device 100 is constant, the smaller the size M2 is, the larger the area of ​​the first electrode layer 120 and the first vapor-deposited layer 130 can be. As a result, the driving efficiency of the organic device 100 can be improved, and the life of the organic device 100 can be extended.

[0288] Fig.11A and Fig. 11B The shortest distance M4 can be determined based on the allowable value of the positional deviation of the first vapor deposition layer 130 that may occur in the entire manufacturing process of the organic device 100. Alternatively, the shortest distance M4 can also be determined based on the allowable value of the positional deviation of the first vapor deposition layer 130 caused by the vapor deposition process of the first vapor deposition chamber 10. The shortest distance M4 can be, for example, greater than 0.5 μm, greater than 1.0 μm, greater than 1.5 μm, or greater than 2.0 μm. In addition, the shortest distance M4 can be, for example, less than 3.0 μm, less than 5.0 μm, less than 7.0 μm, or less than 9.0 μm. The range of the shortest distance M4 can be specified by the first group consisting of 0.5 μm, 1.0 μm, 1.5 μm and 2.0 μm and / or the second group consisting of 3.0 μm, 5.0 μm, 7.0 μm and 9.0 μm. The range of the shortest distance M4 can be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the shortest distance M4 can be specified by a combination of any two of the values ​​included in the first group. The range of the shortest distance M4 can be specified by a combination of any two of the values ​​included in the second group. For example, it may be between 0.5 μm and 9.0 μm, between 0.5 μm and 7.0 μm, between 0.5 μm and 5.0 μm, between 0.5 μm and 3.0 μm, between 0.5 μm and 2.0 μm, between 0.5 μm and 1.5 μm, between 0.5 μm and 1.0 μm, between 1.0 μm and 9.0 μm, between 1.0 μm and 7.0 μm, between 1.0 μm and 5.0 μm, between 1.0 μm and 3.0 μm, between 1.0 μm and 2.0 μm, between 1.0 μm and 1.5 μm, between 1.5 μm and 9.0 μm. It can be above 1.5μm and below 7.0μm, it can be above 1.5μm and below 5.0μm, it can be above 1.5μm and below 3.0μm, it can be above 1.5μm and below 2.0μm, it can be above 2.0μm and below 9.0μm, it can be above 2.0μm and below 7.0μm, it can be above 2.0μm and below 5.0μm, it can be above 2.0μm and below 3.0μm, it can be above 3.0μm and below 9.0μm, it can be above 3.0μm and below 7.0μm, it can be above 3.0μm and below 5.0μm, it can be above 5.0μm and below 9.0μm, it can be above 5.0μm and below 7.0μm, it can be above 7.0μm and below 9.0μm.

[0289] Fig.12 FIG. 6 is a top view showing another example of the standard mark area 62. Fig.12 As shown, the standard mark region 62 may include only one standard mark 63. For example, the standard mark region 62 may include one first mark 64 and one second mark 65 located further inside the first mark 64.

[0290] exist Fig.12 In FIG. 1 , the element marked with reference numeral 130 represents a first vapor deposition layer formed on the standard substrate 60 by a vapor deposition process using a standard mask 50A. Fig.12 As shown, two or more first vapor-deposited layers 130 may be located inside one standard mark 63. That is, the standard mask 50A may be constructed in such a manner that two or more through holes 56 overlap in the region of one standard mark 63. Although not shown, in such a manner that the standard mark region 62 includes two or more standard marks 63, the standard mask 50A may be constructed in such a manner that two or more through holes 56 overlap in the region of one standard mark 63.

[0291] As long as the positional relationship between the standard mark 63 and the first vapor-deposited layer 130 can be observed, the material constituting the standard mark 63 is arbitrary. For example, the standard mark 63 may include a conductive material such as a metal, a conductive metal oxide, or other inorganic materials, similarly to the first electrode layer 120 and the second electrode layer 141. In addition, the standard mark 63 may include a resin material such as an acrylic resin. For example, the standard mark 63 may include a photosensitive resin material used as a resist.

[0292] In addition, the standard mark 63 may have light shielding properties. For example, the standard mark 63 may include a resin material and a coloring material. As the coloring material, for example, carbon black, titanium black, etc. may be used.

[0293] In the case where the standard mark 63 has a light-shielding property, the total light transmittance of the area of ​​the standard substrate 60 that overlaps with the standard mark 63 when viewed from above may be, for example, greater than 0%, greater than 1%, greater than 2%, or greater than 3%. In addition, the total light transmittance may be, for example, less than 5%, less than 10%, less than 20%, or less than 30%. The range of the total light transmittance may be defined by the first group consisting of 0%, 1%, 2%, and 3% and / or the second group consisting of 5%, 10%, 20%, and 30%. The range of the total light transmittance may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the total light transmittance may be defined by a combination of any two of the values ​​included in the first group. The range of the total light transmittance may be defined by a combination of any two of the values ​​included in the second group. For example, it may be from 0% to 30%, from 0% to 20%, from 0% to 10%, from 0% to 5%, from 0% to 3%, from 0% to 2%, from 0% to 1%, from 1% to 30%, from 1% to 20%, from 1% to 10%, from 1% to 5%, from 1% to 3%, from 1% to 2%, from 2% to 30%, and so on. It can be 2% to 20%, 2% to 10%, 2% to 5%, 2% to 3%, 3% to 30%, 3% to 20%, 3% to 10%, 3% to 5%, 5% to 30%, 5% to 20%, 5% to 10%, 10% to 30%, 10% to 20%, 20% to 30%. The total light transmittance is measured by a method according to JIS K 7361-1: 1997. As a measuring instrument for the total light transmittance, an Olympus spectrometer OSP-SMU is used.

[0294] The thickness of the standard mark 63 preferably corresponds to the distance from the surface of the organic device 100 where the first vapor-deposited layer 130 is formed to the first surface 111 of the substrate 110. The surface of the organic device 100 where the first vapor-deposited layer 130 is formed is, for example, the surface of the hole transport layer. The thickness of the standard mark 63 may be, for example, greater than 0.01 μm, greater than 0.05 μm, greater than 0.08 μm, or greater than 0.10 μm. In addition, the thickness of the standard mark 63 may be, for example, less than 0.15 μm, less than 0.20 μm, less than 0.50 μm, or less than 1.00 μm. The range of the thickness of the standard mark 63 may be specified by the first group consisting of 0.01 μm, 0.05 μm, 0.08 μm, and 0.10 μm and / or the second group consisting of 0.15 μm, 0.20 μm, 0.50 μm, and 1.00 μm. The range of the thickness of the standard mark 63 can be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness of the standard mark 63 can be specified by a combination of any two of the values ​​included in the first group. The range of the thickness of the standard mark 63 can be specified by a combination of any two of the values ​​included in the second group. For example, it may be between 0.01 μm and 1.00 μm, between 0.01 μm and 0.50 μm, between 0.01 μm and 0.20 μm, between 0.01 μm and 0.15 μm, between 0.01 μm and 0.10 μm, between 0.01 μm and 0.08 μm, between 0.01 μm and 0.05 μm, between 0.05 μm and 1.00 μm, between 0.05 μm and 0.50 μm, between 0.05 μm and 0.20 μm, between 0.05 μm and 0.15 μm, between 0.05 μm and 0.10 μm, between 0.05 μm and 0.08 μm, or between 0.08 μm and 1.00 μm. It can be between 0.08μm and 0.50μm, between 0.08μm and 0.20μm, between 0.08μm and 0.15μm, between 0.08μm and 0.10μm, between 0.10μm and 1.00μm, between 0.10μm and 0.50μm, between 0.10μm and 0.20μm, between 0.10μm and 0.15μm, between 0.15μm and 1.00μm, between 0.15μm and 0.50μm, between 0.15μm and 0.20μm, between 0.20μm and 1.00μm, between 0.20μm and 0.50μm, and between 0.50μm and 1.00μm.

[0295] Next, the master mask apparatus 15A will be described in detail. Fig.13A 1 is a plan view showing an example of the standard mask device 15A. It should be noted that, among the components of the standard mask device 15A, the same reference numerals are given to the same components as those of the mask device 15, and detailed description thereof may be omitted.

[0296] The standard mask device 15A includes at least one standard mask 50A. The standard mask 50A includes a metal plate 55 and a through hole 56 that penetrates from the first surface 551 of the metal plate 55 to the second surface 552. The standard mask device 15A may include a frame 41 that supports the standard mask 50A. In order to suppress the bending of the standard mask 50A, the frame 41 supports the standard mask 50A while pulling it along its surface direction. In addition, the standard mask 50A may have a pair of end portions 51 overlapping with the frame 41 and a middle portion 52A located between the end portions 51, similarly to the mask 50.

[0297] The standard mask 50A of the standard mask device 15A may be configured in the same manner as the mask 50 of the mask device 15. For example, the standard mask device 15A may include a plurality of standard masks 50A. Fig.13A As shown in FIG. 1 , each standard mask 50A may be in the shape of a rectangle extending along the first direction D1. In the mask device 15, the plurality of standard masks 50A are arranged in a direction intersecting the first direction D1, which is the length direction of the standard masks 50A. Fig.13A As shown, the plurality of standard masks 50A may be arranged along the second direction D2 which is the width direction of the standard mask 50A orthogonal to the length direction of the standard mask 50A. Each standard mask 50A may be fixed to the frame 41 at both ends in the length direction of the standard mask 50A by welding, for example.

[0298] like Fig.13A As shown, the standard mask 50A may include two or more standard regions 58 arranged along the first direction D1. The standard region 58 may include a through hole 56 facing the standard mark 63 of the standard mark region 62 of the standard substrate 60.

[0299] Fig. 13B 1 is a top view showing an example of the relationship between the standard mask device 15A and the device space 103. Fig. 13B In FIG. 5 , the dotted line labeled with the symbol 103 represents the outline of the device space 103 projected onto the standard mask 50A.

[0300] like Fig. 13B As shown, the standard area 58 may be located in the device space 103. Thus, the characteristics of the first vapor deposition chamber 10 in the device space 103 can be evaluated.

[0301] exist Fig. 13BIn FIG. 1 , symbol V3 indicates the interval between the two standard areas 58 in the first direction D1 (hereinafter also referred to as the third interval). The third interval V3 may be smaller than the dimension A1 of the organic device 100 in the first direction D1. For example, the ratio of the third interval V3 to the dimension A1, i.e., V3 / A1, may be less than 0.9, less than 0.8, or less than 0.7. Thus, in the first direction D1, the standard area 58 is easy to overlap with the device space 103. Fig. 13B As shown, the third interval V3 may be the interval between two standard areas 58 included in one standard mask 50A. Although not shown, the third interval V3 may also be the interval between the standard area 58 of the first standard mask 50A and the standard area 58 of the second standard mask 50A adjacent to the first standard mask 50A in the first direction D1.

[0302] The third interval V3 may be, for example, greater than 10 mm, greater than 15 mm, or greater than 25 mm. The third interval V3 may be, for example, less than 50 mm, less than 100 mm, or less than 150 mm. The range of the third interval V3 may be specified by the first group consisting of 10 mm, 15 mm, and 25 mm and / or the second group consisting of 50 mm, 100 mm, and 150 mm. The range of the third interval V3 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the third interval V3 may be specified by a combination of any two of the values ​​included in the first group. The range of the third interval V3 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 10 mm and 150 mm, between 10 mm and 100 mm, between 10 mm and 50 mm, between 10 mm and 25 mm, between 10 mm and 15 mm, between 15 mm and 150 mm, between 15 mm and 100 mm, between 15 mm and 50 mm, between 15 mm and 25 mm, between 25 mm and 150 mm, between 25 mm and 100 mm, between 25 mm and 50 mm, between 50 mm and 150 mm, between 50 mm and 100 mm, or between 100 mm and 150 mm.

[0303] exist Fig. 13B In the figure, symbol U3 represents the dimension of the standard area 58 in the first direction D1 (hereinafter also referred to as the third dimension). The ratio of the third dimension U3 to the third interval V3 is preferably greater than a certain value. Thus, in the first direction D1, the standard area 58 easily overlaps with the device space 103.

[0304] The ratio of the third dimension U3 to the third interval V3, i.e., U3 / V3, can be, for example, greater than 0.005, greater than 0.1, greater than 0.2, or greater than 0.3. U3 / V3 can be, for example, less than 0.5, less than 0.6, less than 0.8, or less than 1.0. The range of U3 / V3 can be specified by the first group consisting of 0.005, 0.1, 0.2, and 0.3 and / or the second group consisting of 0.5, 0.6, 0.8, and 1.0. The range of U3 / V3 can be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of U3 / V3 can be specified by a combination of any two of the values ​​included in the first group. The range of U3 / V3 can be specified by a combination of any two of the values ​​included in the second group. For example, it may be 0.005 or more and 1.0 or less, 0.005 or more and 0.8 or less, 0.005 or more and 0.6 or less, 0.005 or more and 0.5 or less, 0.005 or more and 0.3 or less, 0.005 or more and 0.2 or less, 0.005 or more and 0.1 or less, 0.1 or more and 1.0 or less, 0.1 or more and 0.8 or less, 0.1 or more and 0.6 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, or 0. 2 or more and 1.0 or less, can be 0.2 or more and 0.8 or less, can be 0.2 or more and 0.6 or less, can be 0.2 or more and 0.5 or less, can be 0.2 or more and 0.3 or less, can be 0.3 or more and 1.0 or less, can be 0.3 or more and 0.8 or less, can be 0.3 or more and 0.6 or less, can be 0.3 or more and 0.5 or less, can be 0.5 or more and 1.0 or less, can be 0.5 or more and 0.8 or less, can be 0.5 or more and 0.6 or less, can be 0.6 or more and 1.0 or less, can be 0.6 or more and 0.8 or less, can be 0.8 or more and 1.0 or less.

[0305] exist Fig. 13B In FIG. 1 , symbol V4 represents the interval between two standard areas 58 in the second direction D2 (hereinafter also referred to as the fourth interval). The fourth interval V4 may be smaller than the dimension A2 of the organic device 100 in the second direction D2. For example, the ratio of the fourth interval V4 to the dimension A2, i.e., V4 / A2, may be less than 0.9, less than 0.8, or less than 0.7. Thus, in the second direction D2, the standard area 58 is likely to overlap with the device space 103. Fig. 13BAs shown, the fourth interval V4 may be the interval between the standard area 58 of the first standard mask 50A and the standard area 58 of the second standard mask 50A adjacent to the first standard mask 50A in the second direction D2. Although not shown, the fourth interval V4 may also be the interval between two standard areas 58 included in one standard mask 50A.

[0306] The fourth interval V4 may be, for example, greater than 10 mm, greater than 15 mm, or greater than 25 mm. The fourth interval V4 may be, for example, less than 50 mm, less than 100 mm, or less than 150 mm. The range of the fourth interval V4 may be specified by the first group consisting of 10 mm, 15 mm, and 25 mm and / or the second group consisting of 50 mm, 100 mm, and 150 mm. The range of the fourth interval V4 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the fourth interval V4 may be specified by a combination of any two of the values ​​included in the first group. The range of the fourth interval V4 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 10 mm and 150 mm, between 10 mm and 100 mm, between 10 mm and 50 mm, between 10 mm and 25 mm, between 10 mm and 15 mm, between 15 mm and 150 mm, between 15 mm and 100 mm, between 15 mm and 50 mm, between 15 mm and 25 mm, between 25 mm and 150 mm, between 25 mm and 100 mm, between 25 mm and 50 mm, between 50 mm and 150 mm, between 50 mm and 100 mm, or between 100 mm and 150 mm.

[0307] exist Fig. 13B In FIG. 1 , symbol U4 represents the size of the standard area 58 in the second direction D2 (hereinafter also referred to as the fourth size). The ratio of the fourth size U4 to the fourth interval V4 is preferably greater than a certain value. Thus, in the second direction D2, the standard area 58 easily overlaps with the device space 103.

[0308] The ratio of the fourth dimension U4 to the fourth interval V4, i.e., U4 / V4, can be, for example, greater than 0.005, greater than 0.1, greater than 0.2, or greater than 0.3. U4 / V4 can be, for example, less than 0.5, less than 0.6, less than 0.8, or less than 1.0. The range of U4 / V4 can be specified by the first group consisting of 0.005, 0.1, 0.2, and 0.3 and / or the second group consisting of 0.5, 0.6, 0.8, and 1.0. The range of U4 / V4 can be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of U4 / V4 can be specified by a combination of any two of the values ​​included in the first group. The range of U4 / V4 can be specified by a combination of any two of the values ​​included in the second group. For example, it may be 0.005 or more and 1.0 or less, 0.005 or more and 0.8 or less, 0.005 or more and 0.6 or less, 0.005 or more and 0.5 or less, 0.005 or more and 0.3 or less, 0.005 or more and 0.2 or less, 0.005 or more and 0.1 or less, 0.1 or more and 1.0 or less, 0.1 or more and 0.8 or less, 0.1 or more and 0.6 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, or 0. 2 or more and 1.0 or less, can be 0.2 or more and 0.8 or less, can be 0.2 or more and 0.6 or less, can be 0.2 or more and 0.5 or less, can be 0.2 or more and 0.3 or less, can be 0.3 or more and 1.0 or less, can be 0.3 or more and 0.8 or less, can be 0.3 or more and 0.6 or less, can be 0.3 or more and 0.5 or less, can be 0.5 or more and 1.0 or less, can be 0.5 or more and 0.8 or less, can be 0.5 or more and 0.6 or less, can be 0.6 or more and 1.0 or less, can be 0.6 or more and 0.8 or less, can be 0.8 or more and 1.0 or less.

[0309] Fig.14 Yes Fig.13A The top view of the area enclosed by the dashed line and marked with the symbol XIV in the standard mask 50A is enlarged and shown. The standard area 58 includes at least one through hole 56. Fig.14 As shown, the standard area 58 may include a plurality of through holes 56. In addition, the plurality of through holes 56 may be periodically arranged at a certain interval. Fig.14 As shown, the through holes 56 may be arranged with an arrangement period P3 in one direction and an arrangement period P4 in another direction. The arrangement period P3 and arrangement period P4 of the through holes 56 may be the same as the arrangement period P1 and arrangement period P2 of the standard mark 63 of the standard substrate 60 described above.

[0310] like Fig.14 As shown, the third dimension U3 may be the dimension of the region where the group of through holes 56 is located in the first direction D1. The third interval V3 may be the interval between two groups of through holes 56 in the first direction D1. The fourth dimension U4 may be the dimension of the region where the group of through holes 56 is located in the second direction D2. The fourth interval V4 may be the interval between two groups of through holes 56 in the second direction D2.

[0311] like Fig.14 As shown, the standard area 58 can be located in the central area 501 in the width direction of the standard mask 50A, that is, the second direction D2. In this embodiment, a plurality of standard areas 58 are arranged in the central area 501 along the length direction of the standard mask 50A, that is, the first direction D1. The central area 501 is the central area when the standard mask 50A is divided into three equal parts in the width direction. In addition, the two areas adjacent to the central area 501 in the width direction are referred to as end areas 502. The advantages of the standard area 58 being located in the central area 501 are described below.

[0312] In the process of fixing the standard mask 50A to the frame 41, the standard mask 50A is aligned with respect to the frame 41 while being pulled in the longitudinal direction, and then the standard mask 50A is mounted on the frame 41 by welding or the like. Figure 5 As shown, when the frame 41 includes the alignment mark 48, the standard mask 50A can be aligned with respect to the frame 41 based on the alignment mark 48. Although not shown, the standard mask 50A may also include an alignment mark. In addition, when the position of the standard area 58 is limited to the central area 501 as in the present embodiment, the standard mask 50A can be aligned with respect to the frame 41 with more emphasis on the central area 501 than on the end area 502. For example, a greater weight can be assigned to the central area 501 than to the end area 502. As a result, the central area 501 can be aligned with respect to the frame 41 more accurately than the end area 502.

[0313] An example of a background in which the central region 501 is given more importance than the end region 502 is described. The thickness of the metal plate 55 constituting the standard mask 50A is small. In this case, if the standard mask 50A is pulled in the length direction, deformations such as wrinkles extending in the length direction may sometimes occur in the standard mask 50A. Such deformations are sometimes more likely to occur in the end region 502 than in the central region 501. In the case where deformations such as wrinkles occur in the end region 502, in the alignment process of the standard mask 50A relative to the frame 41, if the central region 501 and the end region 502 are considered equally, the position accuracy of the central region 501 may be reduced due to the deformation of the end region 502. In this case, it is useful to align the standard mask 50A relative to the frame 41 by giving more importance to the central region 501 than the end region 502 as described above. As a result, it is possible to suppress the accuracy of the alignment of the central region 501 relative to the frame 41 from being affected by deformations such as wrinkles generated in the end region 502. Therefore, the arrangement of the standard area 58 can be made more ideal.

[0314] like Fig.14 As shown, the standard mask 50A may include two or more through holes 56 located in the end region 502 and arranged along the length direction and the width direction of the standard mask 50A. The arrangement period P5 and the arrangement period P6 of the through holes 56 in the end region 502 may be the same as or different from the arrangement period P3 or the arrangement period P4 of the through holes 56 in the central region 501. In addition, the arrangement period P5 and the arrangement period P6 of the through holes 56 in the end region 502 may be the same as the arrangement period of the through holes 56 of the mask 50 used to manufacture the organic device 100.

[0315] like Fig.14 As shown, the standard region 58 located in the central region 501 may include a non-penetrating region 57, which is located around the through holes 56 and has a size larger than the arrangement period of the through holes 56 when viewed from above. For example, the size E1 of the non-penetrating region 57 of the standard region 58 in the length direction of the standard mask 50A may be larger than the arrangement period P3 of the through holes 56 in the length direction. In addition, the size E2 of the non-penetrating region 57 of the standard region 58 in the width direction of the standard mask 50A may be larger than the arrangement period P4 of the through holes 56 in the width direction. The non-penetrating region 57 refers to a region where the through holes 56 are not formed.

[0316] By making the standard region 58 include the non-through region 57 having a size larger than the arrangement period of the through holes 56, it is easy to distinguish the through holes 56 in the standard region 58 from other through holes 56 such as the through holes 56 in the end region 502 that do not face the standard mark 63 of the standard substrate 60 in the vapor deposition process described later. In addition, in the observation process of observing the standard substrate 60 after the vapor deposition process, it is easy to distinguish the first vapor deposition layer 130 composed of the vapor deposition material attached to the standard substrate 60 through the through holes 56 in the standard region 58 from the first vapor deposition layer 130 composed of the vapor deposition material attached to the standard substrate 60 through the other through holes 56. Therefore, it is easy to find the first vapor deposition layer 130 as the observation object.

[0317] Next, a method for evaluating the first vapor-deposited layer 130 of the manufacturing apparatus 1 using the standard substrate 60 and the standard mask apparatus 15A will be described.

[0318] First, the standard mask device 15A is prepared and carried into the manufacturing apparatus 1. In addition, the standard substrate 60 is prepared and carried into the manufacturing apparatus 1 through the substrate carrying chamber 31. Next, in the substrate pre-processing chamber 32, the standard substrate 60 is subjected to pre-processing such as dry cleaning.

[0319] Next, a vapor deposition process of forming a first vapor deposition layer 130 on the standard substrate 60 is performed in the first vapor deposition chamber 10. For example, a vapor deposition process of forming a first organic layer 131 on the standard substrate 60 is performed in the 11th vapor deposition chamber 11. The vapor deposition process is as follows, which is the same as the case of using the electrode substrate 105 and the mask device 15.

[0320] First, a combination process of combining the standard substrate 60 and the standard mask device 15A is performed in the first vapor deposition chamber 10. For example, in the eleventh vapor deposition chamber 11, the standard mask device 15A is set above the vapor deposition source 6 using the mask holder 3. In addition, the substrate 110 of the standard substrate 60 and the standard mask 50A of the standard mask device 15A are made to face each other using the substrate holder 2. In addition, the substrate holder 2 is moved in the surface direction of the substrate 110 to adjust the position of the substrate 110 relative to the standard mask 50A. For example, the substrate 110 is moved in the surface direction in such a way that the alignment mark of the standard mask 50A or the frame 41 overlaps with the alignment mark 68 of the substrate 110.

[0321] Next, a process of moving the cooling plate 4 toward the substrate 110 and placing the cooling plate 4 on the second surface 112 side of the substrate 110 may be performed. In addition, a process of placing the magnet 5 on the second surface 112 side of the substrate 110 may be performed. Thus, the standard mask 50A can be attracted to the substrate 110 side by magnetic force. In addition, a process of attracting the standard mask 50A to the substrate 110 side using an electrostatic chuck may be performed.

[0322] The combining process of combining the standard substrate 60 and the standard mask device 15A can be performed based on predetermined settings. The following examples can be given as examples of conditions. The combining process can consider any one setting or a plurality of settings.

[0323] Configuration of the substrate 110

[0324] Magnetic force distribution

[0325] Distribution of electrostatic force

[0326] Configuration of cooling plate 4

[0327] The arrangement of the substrate 110 refers to the posture of the substrate 110, such as the surface direction of the substrate 110. When the substrate holder 2 includes a plurality of chucks attached to the outer edge of the substrate 110, the posture of the substrate 110 can be set by independently moving each chuck.

[0328] When a plurality of magnets 5 are arranged on the second surface 112 side of the substrate 110 , the magnetic force distribution can be set by changing the type and arrangement of the magnets 5 .

[0329] The arrangement of the cooling plate 4 refers to the posture of the cooling plate 4 , such as the surface direction of the cooling plate 4 .

[0330] Next, a vapor deposition process is performed to evaporate the vapor deposition material 7 and cause it to fly toward the substrate 110. A portion of the vapor deposition material 7 that passes through the through hole 56 of the standard mask 50A is attached to the standard mark 63 of the substrate 110 in a pattern corresponding to the through hole 56. Thus, the first organic layer 131 can be formed on the standard mark region 62 of the substrate 110. Fig.15 It is a cross-sectional view showing a state where the first vapor deposition layer 130 such as the first organic layer 131 is formed on the standard mark 63 of the standard substrate 60 through the through hole 56 of the standard mask 50A.

[0331] Next, a step of carrying out the substrate 110 on which the first vapor-deposited layer 130 is formed may be performed from the manufacturing apparatus 1 to the outside through the substrate carrying-out chamber 35. The substrate 110 may be carried out to the outside of the manufacturing apparatus 1 in a state where the elements on the substrate 110 such as the first vapor-deposited layer 130 are not sealed. As a mechanism for carrying out the substrate 110 from the manufacturing apparatus 1 to the outside, an arm that can move while supporting the substrate 110 may be used.

[0332] Next, an observation process is performed to observe the positional relationship between the standard mark 63 and the first vapor-deposited layer 130 in the substrate 110 unloaded from the manufacturing device 1. In the observation process of the present embodiment, the substrate 110 formed with the standard mark 63 and the first vapor-deposited layer 130 is observed from the first surface 111 side using an optical microscope. As an optical microscope, a large automatic two-dimensional coordinate measuring machine AMIC-1710 manufactured by SINTOS-PRECISION Co., Ltd. can be used. The observation conditions using the optical microscope are as follows.

[0333] · Magnification: 10x~20x

[0334] Camera: 2 / 3 inch black and white CCD camera

[0335] Image processing software: 3D-SACM

[0336] It should be noted that other steps may be performed between the unloading step and the observation step. For example, a step of moving the substrate 110 in the observation location, a step of performing a treatment on the substrate 110 to improve the observation efficiency, etc. may be performed.

[0337] Figure 16 to Figure 19 Each of them is a plan view showing an example of the observation result of the positional relationship between the reference mark 63 and the first vapor-deposited layer 130 .

[0338] exist Fig.16 In the example shown, the first vapor-deposited layer 130 is located inside the outer edge of the first mark 64 of the standard mark 63. In this case, the outer edge of the first mark 64 surrounding the outer edge of the first vapor-deposited layer 130 is observed. Fig.16 In the example shown, the first vapor-deposited layer 130 is located outside the outer edge of the second mark 65 of the standard mark 63. In this case, the outer edge of the second mark 65 cannot be observed.

[0339] exist Fig.17 In the example shown, a portion of the first vapor-deposited layer 130 is located outside the outer edge of the first mark 64 of the standard mark 63. In this case, a portion of the outer edge of the first mark 64 cannot be observed. Fig.17 In the example shown, the first vapor-deposited layer 130 is located outside the outer edge of the second mark 65 of the standard mark 63. In this case, the outer edge of the second mark 65 cannot be observed.

[0340] exist Fig.18 In the example shown, a portion of the first vapor-deposited layer 130 is located outside the outer edge of the first mark 64 of the standard mark 63. In this case, a portion of the outer edge of the first mark 64 cannot be observed. Fig.18In the example shown, a portion of the first vapor-deposited layer 130 is located inside the outer edge of the second mark 65 of the standard mark 63. In this case, a portion of the outer edge of the second mark 65 is observed.

[0341] exist Fig.19 In the example shown, the first vapor-deposited layer 130 is located inside the outer edge of the first mark 64 of the standard mark 63. In this case, the outer edge of the first mark 64 surrounding the outer edge of the first vapor-deposited layer 130 is observed. Fig.19 In the example shown, a portion of the first vapor-deposited layer 130 is located inside the outer edge of the second mark 65 of the standard mark 63. In this case, a portion of the outer edge of the second mark 65 is observed.

[0342] Next, a determination step may be performed to determine whether the positional relationship between the reference mark 63 and the first vapor-deposited layer 130 satisfies a condition. For example, the determination step may include a first determination step of determining whether the following condition (1) is satisfied.

[0343] (1) The outer edge of the first vapor-deposited layer 130 is located inside the outer edge of the first mark 64 of the standard mark 63 .

[0344] exist Figure 16 to Figure 19 In the example shown, Fig.16 and Fig.19 The example shown satisfies condition (1). When the organic device 100 is manufactured using the first vapor deposition chamber 10 satisfying condition (1), it is possible to suppress the partial overlap of unit structures such as two adjacent pixels in the substrate 110. Thus, for example, when the organic device 100 is an organic EL display device, it is possible to suppress the occurrence of color mixing between two adjacent pixels.

[0345] The determination step may include a second determination step of determining whether the following condition (2) is satisfied.

[0346] (2) The outer edge of the first vapor-deposited layer 130 is located outside the outer edge of the second mark 65 .

[0347] exist Figure 16 to Figure 19 In the example shown, Fig.16 and Fig.17 The example shown satisfies condition (2). When the organic device 100 is manufactured using the first vapor deposition chamber 10 satisfying condition (2), it is possible to suppress the first vapor deposition layer 130 from becoming smaller than the area of ​​the first electrode layer 120 exposed from the insulating layer 160 when viewed from above. Thus, for example, when the organic device 100 is an organic EL display device, it is possible to suppress a decrease in the luminous efficiency of the pixel.

[0348] In the determination process, when the above-mentioned condition (1) is satisfied, the first deposition chamber 10 used for forming the first deposition layer 130 can be determined as a qualified product. In addition, in the determination process, when the above-mentioned conditions (1) and (2) are satisfied, the first deposition chamber 10 used for forming the first deposition layer 130 can be determined as a qualified product. In addition, in the determination process, when the above-mentioned condition (2) is satisfied, the first deposition chamber 10 used for forming the first deposition layer 130 can be determined as a qualified product.

[0349] In addition, based on Figure 16 to Figure 19 The observation results shown evaluate the positional relationship between the reference mark 63 and the first vapor deposition layer 130 in more detail. For example, the offset amount and direction of the first vapor deposition layer 130 relative to the reference mark 63 can be evaluated. Thus, the state of the first vapor deposition chamber 10 can be known in more detail.

[0350] The determination step may be performed based on the above conditions (1), (2), etc., for each region of the substrate 110 where the first deposition layer 130 is deposited. For example, the region where the first deposition layer 130 is deposited in the substrate 110 may be divided into m regions in the first direction D1 and n regions in the second direction D2, and the determination step may be performed in m×n regions. Fig. 20 FIG. 1 is a top view showing an example of performing a determination process on each region of the substrate 110. Fig. 20 In the example shown, m = 6 and n = 11. Symbol Rk-1 denotes a region that is the kth region in the first direction D1 and the lth region in the second direction D2.

[0351] exist Fig. 20 In the example shown, the symbol A, B1, B2 or C represents the determination result in each region Rk-1 of the substrate 110. The symbol A represents the determination result in each region Rk-1 of the substrate 110. Fig.16 The example shown satisfies both conditions (1) and (2). Symbol B1 indicates that Fig.17 As shown in the example, condition (1) is not satisfied but condition (2) is satisfied. Symbol B2 indicates that Fig.18 The example shown does not satisfy both conditions (1) and (2). Symbol C indicates that Fig.19 As in the example shown, condition (1) is satisfied but condition (2) is not satisfied.

[0352] according to Fig. 20 The example shown can know the state of each area of ​​the first vapor deposition chamber 10 in more detail. In addition, in each area Rk-1 of the substrate 110, the offset and direction of the first vapor deposition layer 130 relative to the standard mark 63 can be evaluated. Thus, the state of each area of ​​the first vapor deposition chamber 10 can be known in more detail.

[0353] Next, an adjustment process may be performed to adjust the settings of the combination process of combining the standard substrate 60 and the standard mask device 15A based on the information of the positional relationship between the standard mark 63 and the first vapor deposition layer 130 obtained in the observation process. For example, the configuration of the substrate 110, the magnetic force distribution of the magnet 5, the distribution of the electrostatic force of the electrostatic chuck, the configuration of the cooling plate 4, and other settings may be adjusted based on the information of the positional relationship. Then, the above-mentioned vapor deposition process, observation process, and determination process may be performed in the adjusted first vapor deposition chamber 10 to confirm that the adjusted first vapor deposition chamber 10 satisfies the above-mentioned conditions (1) and (2). The settings adjusted in the adjustment process may also be adopted in the method for manufacturing the organic device 100 using the electrode substrate 105 and the mask device 15.

[0354] The above-mentioned vapor deposition process, observation process, determination process, adjustment process, etc. using the standard substrate 60 and the standard mask device 15A can be implemented in the evaluation method when the newly manufactured manufacturing device 1 is delivered to the customer. Alternatively, the above-mentioned vapor deposition process, observation process, determination process, adjustment process, etc. can also be implemented in the maintenance method of the manufacturing device 1 delivered to the customer.

[0355] According to the present embodiment, by performing the vapor deposition process using the standard substrate 60 and the standard mask device 15A, the characteristics of each first vapor deposition chamber 10 included in the manufacturing device 1 can be evaluated separately. Therefore, when the organic device 100 manufactured by the manufacturing device 1 does not meet the desired specifications, it is easy to identify the cause. In addition, based on the evaluation results, each first vapor deposition chamber 10 included in the manufacturing device 1 can be guaranteed separately.

[0356] By implementing the above-mentioned evaluation method or maintenance method, it is possible to obtain a manufacturing apparatus 1 having a first vapor deposition chamber 10 that satisfies the conditions of the determination process. For example, it is possible to obtain a manufacturing apparatus 1 having a first vapor deposition chamber 10 that is proven to satisfy the above-mentioned condition (1) "the outer edge of the first vapor deposition layer 130 is located inside the outer edge of the first mark 64 of the standard mark 63". In addition, by forming the first vapor deposition layer 130 on the electrode substrate 105 using the mask device 15 in the first vapor deposition chamber 10 that satisfies the conditions of the determination process, it is possible to improve the accuracy of the position and size of the first vapor deposition layer 130 in the organic device 100. As a result, it is possible to reduce the defect rate of the organic device 100 or improve the characteristics of the organic device 100.

[0357] It should be noted that various changes may be made to the above-mentioned one embodiment. Hereinafter, other embodiments will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the following description, for parts that can be constructed in the same manner as the above-mentioned one embodiment, the same symbols as those used for the corresponding parts in the above-mentioned one embodiment are used, and repeated descriptions are omitted. In addition, when the effects obtained in the above-mentioned one embodiment can obviously also be obtained in other embodiments, the description thereof is sometimes omitted.

[0358] Fig.21 FIG. 1 is a top view showing an example of a standard mask device 15A. Fig.21 As shown, the standard mask device 15A may include an end standard mask 50B, which is closer to the first side 411 and the second side 412 of the frame 41 than the standard mask 50A in the second direction D2 and has a different width from the standard mask 50A. Fig.21 In the example shown, the width of the end standard mask 50B is smaller than the width of the standard mask 50A. Similar to the standard mask 50A, the end standard mask 50B may include two or more standard areas 58 arranged along the first direction D1. By making the standard mask device 15A include the end standard mask 50B, the existence range of the standard area 58 of the standard mask device 15A can be expanded to the area closer to the first side 411 in the area of ​​the opening 43 of the frame 41. As a result, the existence range R1 of the standard mark area 62 of the standard substrate 60 determined corresponding to the existence range of the standard area 58 of the standard mask device 15A can be expanded. Therefore, the evaluation of the first vapor deposition chamber 10 can be implemented in a wider area.

[0359] Fig. 22 1 is a top view showing an example of a standard mask device 15A. Fig.23 Yes Fig. 22 The standard mask 50A is a top view showing an enlarged middle portion 52A of the standard mask 50A. Similar to the mask 50 used to manufacture the organic device 100, the standard mask 50A may include an effective area 53 including a plurality of through holes 56. In this case, the standard area 58 may be located in a peripheral area 54 around the effective area 53. For example, Fig.23 As shown in FIG. 1 , the standard area 58 may be located in a region of the peripheral area 54 that does not overlap with the effective area 53 when viewed along the first direction D1 and does not overlap with the effective area 53 when viewed along the second direction D2. It should be noted that when the standard area 58 is located in the peripheral area 54, Fig. 22 As shown, the standard mask device 15A may not include the above-mentioned supporting member that overlaps with the peripheral area 54 in a plan view and extends in the second direction D2.

[0360] Fig.241 is a top view showing an example of the middle portion 52A of the standard mask 50A. Fig.24 As shown, the standard area 58 may be located in a region of the peripheral area 54 that overlaps with the effective area 53 when viewed along the first direction D1 and does not overlap with the effective area 53 when viewed along the second direction D2.

[0361] Fig.25 1 is a top view showing an example of the middle portion 52A of the standard mask 50A. Fig.25 As shown, the standard mask 50A may include two or more standard regions 58 located in the end region 502 and arranged along the first direction D1. In this case, the standard mask 50A may or may not include two or more standard regions 58 located in the central region 501 and arranged along the first direction D1.

[0362] Fig.26 1 is a top view showing an example of the middle portion 52A of the standard mask 50A. Fig.26 As shown, the end region 502 of the standard mask 50A may include a non-through region 57. For example, the through hole 56 may not be located in a region of the end region 502 that overlaps with one standard region 58 of the central region 501 when viewed in the second direction D2.

[0363] Fig. 27 FIG. 4 is a top view showing an example of a standard mark area 62 of a standard substrate 60. Fig. 27 As shown, the first mark 64 of the standard mark area 62 may include a layer extending to the area surrounded by the first outer edge 641. The layer of the first mark 64 may be a light shielding layer having a light shielding property.

[0364] Fig.28 FIG. 4 is a top view showing an example of a standard mark area 62 of a standard substrate 60. Fig.28 As shown, the second mark 65 of the standard mark area 62 may include a layer extending to the area surrounded by the second outer edge 651. In this case, the first mark 64 may include a layer extending between the first outer edge 641 and the second outer edge 651. For example, the first mark 64 may include a layer extending to the area surrounded by the first outer edge 641, and the second mark 65 may include a layer located on the layer of the first mark 64 and extending to the area surrounded by the second outer edge 651. The layer of the first mark 64 may be a light-shielding layer having a light-shielding property. In addition, the layer of the second mark 65 may be a light-shielding layer having a light-shielding property.

[0365] Fig.29 FIG. 4 is a top view showing an example of a standard mark area 62 of a standard substrate 60. Fig.29 As shown in FIG. 1 , the standard mark area 62 may include a first mark 64 including two orthogonal linear elements 643. In this case, Fig.29As shown by the middle dotted line, the first outer edge 641 of the first mark 64 can be determined by a virtual straight line that is in contact with the end 644 of the linear element 643 and is orthogonal to the linear element 643 .

[0366] Fig.30 and Fig.31 1 is a cross-sectional view showing an example of a process of observing the first vapor-deposited layer 130 on the first mark 64 of the standard substrate 60. Fig.30 and Fig.31 In the example shown, the first mark 64 of the standard mark area 62 may be a light-shielding layer having a light-shielding property.

[0367] like Fig.30 and Fig.31 As shown, the observation process of observing the first vapor-deposited layer 130 may include the following process: irradiating light L1 toward the first mark 64 from the surface side of the standard substrate 60 opposite to the light shielding layer of the first mark 64 and the first vapor-deposited layer 130, that is, from the second surface 112 side, and observing whether excitation light L2 from the first vapor-deposited layer 130 is generated. In the case where the first vapor-deposited layer 130 includes a fluorescent material, when the first vapor-deposited layer 130 is irradiated with light, excitation light is generated from the first vapor-deposited layer 130. Therefore, as Fig.31 As shown, when the outer edge of the first vapor deposition layer 130 is located outside the first outer edge 641 of the first mark 64 in a plan view, the excitation light L2 is easily generated from the first vapor deposition layer 130. Fig.30 As shown in FIG. 1 , when the outer edge of the first vapor-deposited layer 130 is located at a position further inside than the first outer edge 641 of the first mark 64 when viewed from above, it is difficult to generate the excitation light L2 from the first vapor-deposited layer 130. Therefore, by observing whether the excitation light L2 is generated, information related to whether the outer edge of the first vapor-deposited layer 130 is located at a position further inside than the first outer edge 641 of the first mark 64 when viewed from above can be obtained.

[0368] In the observation process of observing the first vapor deposition layer 130, the absolute position of the first vapor deposition layer 130 in the coordinate system on the substrate 110 of the standard substrate 60 can be calculated. In this case, the information obtained by the evaluation method of the first vapor deposition chamber 10 may include: information related to the absolute position of the first vapor deposition layer 130 in the coordinate system on the substrate 110 of the standard substrate 60, and information related to the relative position of the first vapor deposition layer 130 with respect to the standard mark 63 of the standard substrate 60, or only one of them.

[0369] An example of a method for calculating the absolute position of the first vapor-deposited layer 130 in the coordinate system on the substrate 110 of the standard substrate 60 is described. For example, when the standard substrate 60 includes the alignment mark 68 as described above, the coordinates of the standard marks 63 such as the first mark 64 and the second mark 65 in the coordinate system on the substrate 110 of the standard substrate 60 can be calculated using the alignment mark 68 as a reference. In this case, based on the information related to the coordinates of the standard marks 63 and the information related to the relative positional offset of the first vapor-deposited layer 130 with respect to the standard marks 63, the information related to the absolute position of the first vapor-deposited layer 130 in the coordinate system on the substrate 110 of the standard substrate 60 can be obtained. As a device for measuring the coordinates of the standard marks 63, a large automatic two-dimensional coordinate measuring machine AMIC-1710 manufactured by SINTOS-PRECISION Co., Ltd. can be used in the same manner as in the case of the above-mentioned observation process.

[0370] In the case where the standard substrate 60 includes an alignment mark 68, the above-mentioned determination process can be implemented based on information related to the absolute position of the first vapor-deposited layer 130 in the coordinate system on the substrate 110 of the standard substrate 60. For example, the determination process can be implemented based on whether the coordinates of the center of the first vapor-deposited layer 130 are within a specified range. In addition, the determination process can be implemented based on whether the coordinates of the outer edge of the first vapor-deposited layer 130 are within a specified range. In these cases, it can be said that the determination process is implemented based on the relationship between the coordinate system on the substrate 110 of the standard substrate 60 specified by the alignment mark 68 and the first vapor-deposited layer 130. In addition, it can be said that the observation process is to observe the positional relationship between the alignment mark 68 and the first vapor-deposited layer 130. Therefore, it can be said that the alignment mark 68 functions as a standard mark of the standard substrate 60. In this case, the number of alignment marks 68 that function as standard marks can also be less than the number of the first vapor-deposited layer 130 formed on the substrate 110.

[0371] In the above embodiment, an example is shown in which the arrangement direction of the through holes 56 of the standard mask 50A is parallel to the length direction of the standard mask 50A, that is, the first direction D1, or parallel to the width direction of the standard mask 50A, that is, the second direction D2. For example, an example is shown in which the through holes 56 of the standard mask 50A are arranged along the first direction D1 and the second direction D2. However, this is not limited to this, and the arrangement direction of the through holes 56 of the standard area 58 of the standard mask 50A may also be different from the first direction D1 and the second direction D2. For example, Fig.32 As shown in FIG. 1 , the through holes 56 of the standard mask 50A may be arranged in a third direction D3 and a fourth direction D4 that are different from the first direction D1 and the second direction D2. Fig.32In the illustrated example, reference numeral P3 indicates an arrangement period of the through holes 56 in the standard region 58 in the third direction D3 , and reference numeral P4 indicates an arrangement period of the through holes 56 in the standard region 58 in the fourth direction D4 .

[0372] In addition, the arrangement direction of the through holes 56 located in the end region 502 may be different from the first direction D1 and the second direction D2. Fig.32 As shown in FIG. 1 , the through holes 56 of the standard mask 50A may be arranged in a third direction D3 and a fourth direction D4 that are different from the first direction D1 and the second direction D2. Fig.32 In the example shown, symbol P5 represents the arrangement period of the through holes 56 in the end region 502 in the third direction D3, and symbol P4 represents the arrangement period of the through holes 56 in the end region 502 in the fourth direction D4. The arrangement period P5 and the arrangement period P6 of the through holes 56 in the end region 502 may be the same as or different from the arrangement period P3 or the arrangement period P4 of the through holes 56 in the central region 501.

[0373] like Fig.32 As shown, the standard region 58 located in the central region 501 may include a non-through region 57, which is located around the through holes 56 and has a size larger than the arrangement period of the through holes 56 when viewed from above. For example, the size E1 of the non-through region 57 of the standard region 58 in the third direction D3 may be larger than the arrangement period P3 of the through holes 56 in the third direction D3. In addition, the size E2 of the non-through region 57 of the standard region 58 in the fourth direction D4 may be larger than the arrangement period P4 of the through holes 56 in the fourth direction D4. Thus, in the observation process, it is easy to distinguish the first vapor deposition layer 130 composed of the vapor deposition material attached to the standard substrate 60 through the through holes 56 of the standard region 58 from the first vapor deposition layer 130 composed of the vapor deposition material attached to the standard substrate 60 through other through holes 56.

[0374] Next, a second embodiment will be described. The second embodiment has features related to a mask support 40 .

[0375] When a mask support such as a frame that supports the mask is deformed, the position of the mask fixed to the mask support is changed. It is required to suppress the deformation of the mask support.

[0376] The mask support body of the second embodiment that supports the mask while applying tension to the mask may include: a frame including an opening, and a horizontal bar located at the opening and connected to the frame. The frame may include: a frame first surface to which the mask is fixed; a frame second surface located on the opposite side of the frame first surface; an inner side surface located between the frame first surface and the frame second surface and connected to the horizontal bar; and an outer side surface located on the opposite side of the inner side surface. The horizontal bar may include: a horizontal bar first surface located on the side of the frame first surface; a horizontal bar second surface located on the opposite side of the horizontal bar first surface; and a horizontal bar side surface located between the horizontal bar first surface and the horizontal bar second surface. The frame first surface and the horizontal bar first surface may be continuous.

[0377] According to the second embodiment, it is possible to suppress deformation of the mask support.

[0378] A first aspect of the second embodiment relates to a mask support body that supports the mask while applying tension to the mask, wherein:

[0379] The mask support body comprises: a frame including an opening, and a horizontal bar located in the opening and connected to the frame.

[0380] The frame includes: a first frame surface, to which the mask is fixed; a second frame surface, located on the opposite side of the first frame surface; an inner side surface, located between the first frame surface and the second frame surface, and connected to the horizontal bar; and an outer side surface, located on the opposite side of the inner side surface.

[0381] The horizontal bar includes: a first horizontal bar surface, located on the first side of the frame; a second horizontal bar surface, located on the opposite side of the first horizontal bar surface; and a horizontal bar side surface, located between the first horizontal bar surface and the second horizontal bar surface.

[0382] The first surface of the frame is continuous with the first surface of the horizontal strip.

[0383] In a second aspect of the second embodiment, in the mask support according to the first aspect, the frame first surface and the row first surface may be located on the same plane.

[0384] In the third mode of the second embodiment, in each mask support body of the above-mentioned first mode or the above-mentioned second mode, when the above-mentioned mask support body is observed along the normal direction of the above-mentioned first surface of the frame, the above-mentioned inner side surface and the above-mentioned horizontal stripe side surface can be connected via a first connecting portion having a first curvature radius.

[0385] In a fourth aspect of the second embodiment, in each of the mask supports of the first to third aspects, the inner side surface and the second surface of the horizontal stripe may be connected via a second connecting portion having a second radius of curvature.

[0386] In a fifth aspect of the second embodiment, in each of the mask supports of the first to fourth aspects, the frame may include: a pair of first sides extending along a first direction, and a pair of second sides extending along a second direction intersecting the first direction. The mask may be fixed to the second sides. The horizontal bar may include a first horizontal bar connected to the first side.

[0387] In a sixth aspect of the second embodiment, in each of the mask supports of the first to fourth aspects, the frame may include a pair of first sides extending in a first direction and a pair of second sides extending in a second direction intersecting the first direction. The mask may be fixed to the second sides.

[0388] The horizontal bar may include a second horizontal bar connected to the second side.

[0389] In a seventh aspect of the second embodiment, in each of the mask supports of the first to fourth aspects, the frame may include: a pair of first sides extending in a first direction, and a pair of second sides extending in a second direction intersecting the first direction. The mask may be fixed to the second side. The horizontal bar may include: a first horizontal bar connected to the first side, and a second horizontal bar connected to the second side. When the mask support is observed along the normal direction of the first surface of the frame, the horizontal bar side surface of the first horizontal bar and the horizontal bar side surface of the second horizontal bar may be connected via a third connecting portion having a third radius of curvature.

[0390] In an eighth aspect of the second embodiment, in each of the mask supports of the first to seventh aspects, a width of the row bar on the row bar first surface is larger than a width of the row bar on the row bar second surface.

[0391] In a ninth aspect of the second embodiment, in each of the mask supports of the first to eighth aspects, the horizontal stripe may include a portion where a width of the horizontal stripe decreases as it approaches a second surface of the horizontal stripe in a thickness direction of the horizontal stripe.

[0392] In a tenth aspect of the second embodiment, in each of the mask supports of the first to ninth aspects, the inner side surface may include a portion which is farther away from the center of the opening in a plan view as it approaches the second surface of the frame in a thickness direction of the frame.

[0393] In an eleventh aspect of the second embodiment, in each of the mask support bodies of the first to tenth aspects, the frame may have a thickness of 5 mm to 40 mm.

[0394] In a twelfth aspect of the second embodiment, in each of the mask supports of the first to eleventh aspects, the thickness of the horizontal stripes may be 50 μm or more and 1000 μm or less.

[0395] In a thirteenth aspect of the second embodiment, in each of the mask supports of the first to twelfth aspects, the thickness of the horizontal stripe may be smaller than the thickness of the frame.

[0396] In a fourteenth aspect of the second embodiment, in each of the mask supports of the first to thirteenth aspects, a ratio of a thickness of the horizontal stripe to a thickness of the frame may be 0.85 or less.

[0397] In a fifteenth aspect of the second embodiment, in each of the mask supports of the first to fourteenth aspects, the width of the horizontal stripe may be not less than 1 mm and not more than 100 mm.

[0398] The 16th mode of the 2nd embodiment relates to a method for manufacturing a mask support body, which is a method for manufacturing a mask support body of any one of the above-mentioned 1st mode to the above-mentioned 15th mode, and comprises the following steps: a preparation step of preparing a plate including a first surface and a second surface located on the opposite side of the above-mentioned first surface; and a processing step of forming the above-mentioned horizontal stripes by processing the central area of ​​the above-mentioned plate when the above-mentioned plate is observed along the normal direction of the above-mentioned second surface from the above-mentioned second surface side.

[0399] A seventeenth aspect of the second embodiment relates to a mask device including: the mask support according to any one of the first to fifteenth aspects; and a mask including a through hole and fixed to the first surface of the frame of the mask support.

[0400] The 18th mode of the second embodiment relates to the mask device of the 17th mode, wherein the mask support may include two or more openings divided by the horizontal strip. The mask may include two or more effective areas. The effective area may include a group of regularly arranged through holes. When viewed from above, the two or more effective areas may overlap with one of the openings.

[0401] The 19th mode of the second embodiment relates to a method for manufacturing an organic device, which comprises a vapor deposition step, in which an organic material is vapor deposited on a substrate through the through holes of the mask of each mask device of the 17th mode or the 18th mode to form a vapor deposition layer on the substrate.

[0402] A twentieth aspect of the second embodiment relates to an organic device including the vapor deposition layer formed on the substrate by the vapor deposition step of the method for manufacturing an organic device according to the nineteenth aspect.

[0403] Hereinafter, the second embodiment will be described in detail with reference to the accompanying drawings. It should be noted that the method shown below is an example of the second embodiment, and the second embodiment is not limited to these methods for interpretation. In the following description and the accompanying drawings used in the following description, for parts that can be constructed in the same manner as the above-mentioned embodiment, the same symbols as those used for the corresponding parts in the above-mentioned embodiment are used. Repeated descriptions are omitted. In addition, when the effects obtained in the above-mentioned embodiment can obviously also be obtained in the following embodiment, their descriptions are sometimes omitted.

[0404] Fig.33 1 is a top view showing the mask device 15 when viewed from the first surface 551 side of the mask 50. Fig.33In the figure, the symbol L1 represents the size of the mask 50 in the first direction D1, that is, the length of the mask 50. The size L1 may be, for example, greater than 150 mm, greater than 300 mm, greater than 450 mm, or greater than 600 mm. The size L1 may be, for example, less than 750 mm, less than 1000 mm, less than 1500 mm, or less than 2000 mm. The range of the size L1 may be specified by the first group consisting of 150 mm, 300 mm, 450 mm, and 600 mm and / or the second group consisting of 750 mm, 1000 mm, 1500 mm, and 2000 mm. The range of the size L1 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the size L1 may be specified by a combination of any two of the values ​​included in the first group. The range of the size L1 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 150 mm and 2000 mm, between 150 mm and 1500 mm, between 150 mm and 1000 mm, between 150 mm and 750 mm, between 150 mm and 600 mm, between 150 mm and 450 mm, between 150 mm and 300 mm, between 300 mm and 2000 mm, between 300 mm and 1500 mm, between 300 mm and 1000 mm, between 300 mm and 750 mm, between 300 mm and 600 mm, between 300 mm and 450 mm, between 450 mm and 2000 mm, or between 450 mm and 2000 mm. It can be between 450mm and 1500mm, between 450mm and 1000mm, between 450mm and 750mm, between 450mm and 600mm, between 600mm and 2000mm, between 600mm and 1500mm, between 600mm and 1000mm, between 600mm and 750mm, between 750mm and 2000mm, between 750mm and 1500mm, between 750mm and 1000mm, between 1000mm and 2000mm, between 1000mm and 1500mm, or between 1500mm and 2000mm.

[0405] exist Fig.33In the figure, symbol WA1 represents the dimension of the mask 50 in the second direction D2, that is, the width of the mask 50. The dimension WA1 may be, for example, greater than 50 mm, greater than 100 mm, greater than 150 mm, or greater than 200 mm. The dimension WA1 may be, for example, less than 250 mm, less than 300 mm, less than 350 mm, or less than 400 mm. The range of the dimension WA1 may be specified by the first group consisting of 50 mm, 100 mm, 150 mm, and 200 mm and / or the second group consisting of 250 mm, 300 mm, 350 mm, and 400 mm. The range of the dimension WA1 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension WA1 may be specified by a combination of any two of the values ​​included in the first group. The range of the dimension WA1 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 50 mm and 400 mm, between 50 mm and 350 mm, between 50 mm and 300 mm, between 50 mm and 250 mm, between 50 mm and 200 mm, between 50 mm and 150 mm, between 50 mm and 100 mm, between 100 mm and 400 mm, between 100 mm and 350 mm, between 100 mm and 300 mm, between 100 mm and 250 mm, between 100 mm and 200 mm, between 100 mm and 150 mm, between 150 mm and 400 mm, or between 150 mm and 400 mm. It can be between 150mm and 350mm, between 150mm and 300mm, between 150mm and 250mm, between 150mm and 200mm, between 200mm and 400mm, between 200mm and 350mm, between 200mm and 300mm, between 200mm and 250mm, between 250mm and 400mm, between 250mm and 350mm, between 250mm and 300mm, between 300mm and 400mm, between 300mm and 350mm, between 350mm and 400mm.

[0406] The mask support 40 will be described. Fig.34 It is shown from Fig.33FIG. 1 is a diagram showing a state where the mask device 15 is removed from the mask 50. In addition to the frame 41 including the opening 43, the mask support 40 may also include a horizontal bar 42 connected to the frame 41. The horizontal bar 42 may extend in a manner that crosses the opening 43. The horizontal bar 42 may be located below the region of the mask 50 that overlaps with the opening 43 when viewed from above during the evaporation step described later. The horizontal bar 42 may support the mask 50 from below during the evaporation step. Thus, it is possible to suppress the mask 50 from being bent due to its own weight.

[0407] The frame 41, the horizontal bar 42, and the opening 43 will be described. First, the frame 41 will be described.

[0408] like Fig.33 and Fig.34 As shown, the frame 41 may include a pair of first sides 411 facing each other across the opening 43, and a pair of second sides 412 facing each other across the opening 43. The first side 411 and the second side 412 extend in different directions. Fig.33 As shown, the first side 411 may extend along the length direction of the mask 50, that is, the first direction D1, and the second side 412 may extend along the second direction D2 orthogonal to the first direction D1. Fig.33 As shown, the end 51 of the mask 50 may be fixed to the second side 412. In addition, the second side 412 to which the mask 50 is fixed may be longer than the first side 411. The opening 43 of the frame 41 may be surrounded by a pair of first sides 411 and a pair of second sides 412.

[0409] exist Fig.34In the figure, symbol L21 represents the size of the opening 43 of the frame 41 in the first direction D1. Symbol L22 represents the size of the opening 43 of the frame 41 in the second direction D2. L22 / L21 can be, for example, greater than 0.6, greater than 0.8, greater than 1.0, or greater than 1.2. L22 / L21 can be, for example, less than 1.4, less than 1.6, less than 1.8, or less than 2.0. The range of L22 / L21 can be specified by the first group consisting of 0.6, 0.8, 1.0 and 1.2 and / or the second group consisting of 1.4, 1.6, 1.8 and 2.0. The range of L22 / L21 can be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of L22 / L21 can be specified by a combination of any two of the values ​​included in the first group. The range of L22 / L21 can be defined by a combination of any two of the values ​​included in the second group. For example, it can be 0.6 to 2.0, 0.6 to 1.8, 0.6 to 1.6, 0.6 to 1.4, 0.6 to 1.2, 0.6 to 1.0, 0.6 to 0.8, 0.8 to 2.0, 0.8 to 1.8, 0.8 to 1.6, 0.8 to 1.4, 0.8 to 1.2, 0.8 to 1.0, 1.0 to 2.0 It can be above 1.0 and below 1.8, it can be above 1.0 and below 1.6, it can be above 1.0 and below 1.4, it can be above 1.0 and below 1.2, it can be above 1.2 and below 2.0, it can be above 1.2 and below 1.8, it can be above 1.2 and below 1.6, it can be above 1.2 and below 1.4, it can be above 1.4 and below 2.0, it can be above 1.4 and below 1.8, it can be above 1.4 and below 1.6, it can be above 1.6 and below 2.0, it can be above 1.6 and below 1.8, it can be above 1.8 and below 2.0.

[0410] The dimension L21 of the opening 43 in the first direction D1 may be, for example, greater than 150 mm, greater than 300 mm, greater than 450 mm, or greater than 600 mm. The dimension L21 may be, for example, less than 750 mm, less than 1000 mm, less than 1500 mm, or less than 2000 mm. The range of the dimension L21 may be specified by the first group consisting of 150 mm, 300 mm, 450 mm, and 600 mm and / or the second group consisting of 750 mm, 1000 mm, 1500 mm, and 2000 mm. The range of the dimension L21 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension L21 may be specified by a combination of any two of the values ​​included in the first group. The range of the dimension L21 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 150 mm and 2000 mm, between 150 mm and 1500 mm, between 150 mm and 1000 mm, between 150 mm and 750 mm, between 150 mm and 600 mm, between 150 mm and 450 mm, between 150 mm and 300 mm, between 300 mm and 2000 mm, between 300 mm and 1500 mm, between 300 mm and 1000 mm, between 300 mm and 750 mm, between 300 mm and 600 mm, between 300 mm and 450 mm, between 450 mm and 2000 mm, or between 450 mm and 2000 mm. It can be between 450mm and 1500mm, between 450mm and 1000mm, between 450mm and 750mm, between 450mm and 600mm, between 600mm and 2000mm, between 600mm and 1500mm, between 600mm and 1000mm, between 600mm and 750mm, between 750mm and 2000mm, between 750mm and 1500mm, between 750mm and 1000mm, between 1000mm and 2000mm, between 1000mm and 1500mm, or between 1500mm and 2000mm.

[0411] The dimension L22 of the opening 43 in the second direction D2 may be, for example, greater than 600 mm, greater than 800 mm, greater than 1000 mm, or greater than 1200 mm. The dimension L22 may be, for example, less than 1400 mm, less than 1600 mm, less than 1800 mm, or less than 2000 mm. The range of the dimension L22 may be specified by the first group consisting of 600 mm, 800 mm, 1000 mm, and 1200 mm and / or the second group consisting of 1400 mm, 1600 mm, 1800 mm, and 2000 mm. The range of the dimension L22 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension L22 may be specified by a combination of any two of the values ​​included in the first group. The range of the dimension L22 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 600 mm and 2000 mm, between 600 mm and 1800 mm, between 600 mm and 1600 mm, between 600 mm and 1400 mm, between 600 mm and 1200 mm, between 600 mm and 1000 mm, between 600 mm and 800 mm, between 800 mm and 2000 mm, between 800 mm and 1800 mm, between 800 mm and 1600 mm, between 800 mm and 1400 mm, between 800 mm and 1200 mm, between 800 mm and 1000 mm, between 1000 mm and 2000 mm, or between 1000 mm and 1000 mm. The length of the spacer can be between 100mm and 1800mm, between 1000mm and 1600mm, between 1000mm and 1400mm, between 1000mm and 1200mm, between 1200mm and 2000mm, between 1200mm and 1800mm, between 1200mm and 1600mm, between 1200mm and 1400mm, between 1400mm and 2000mm, between 1400mm and 1800mm, between 1400mm and 1600mm, between 1600mm and 2000mm, between 1600mm and 1800mm, or between 1800mm and 2000mm.

[0412] Fig.35 is along Fig.33 A cross-sectional view of the mask device 15 taken along line XXXV-XXXV. Fig.36 is along Fig.33A cross-sectional view of the mask device 15 taken along line XXXVI-XXXVI. Fig.35 and Fig.36 As shown, the frame 41 may include: an inner side surface 41e located between the first frame surface 41a and the second frame surface 41b and facing the opening 43; and an outer side surface 41f located on the opposite side of the inner side surface 41e. Fig.35 and Fig.36 As shown, the inner side surface 41e and the outer side surface 41f can be developed along the normal direction of the first frame surface 41a.

[0413] The horizontal bar 42 is described. The horizontal bar 42 is connected to the inner side surface 41e of the frame 41 and crosses the opening 43 in a plan view. Fig.33 and Fig.34 As shown, the horizontal bar 42 may include a first horizontal bar 421 connected to the inner side surface 41e of the first side 411 of the frame 41. The first horizontal bar 421 may extend along the second direction D2. For example, the first side 411 may include a pair of horizontal bar side surfaces 42c extending along the second direction D2 when viewed from above, and the horizontal bar side surfaces 42c may be connected to the inner side surface 41e of the first side 411 of the frame 41. A plurality of first horizontal bars 421 may be arranged along the first direction D1. The length of the first side 411 may be the same as the dimension L22 of the opening 43 of the frame 41 in the second direction D2.

[0414] like Fig.35 and Fig.36 As shown, the first horizontal bar 421 may include: a horizontal bar first surface 42a located on the frame first surface 41a side, and a horizontal bar second surface 42b located on the opposite side of the horizontal bar first surface 42a. The horizontal bar first surface 42a may be in contact with the second surface 552 of the mask 50. The first horizontal bar 421 can suppress the mask 50 from being bent due to its own weight.

[0415] Reference Fig.37A and Fig.38A The structure of the boundary between the frame 41 and the horizontal bar 42 will be described. Fig.37A Yes Fig.34 FIG. 1 is a plan view showing an example of the mask support body 40 enlarged and shown in the range surrounded by the dotted line and denoted by the symbol XXXVIIA. Fig.38A is along Fig.37A A cross-sectional view of the mask support 40 taken along line XXXVIIIA-XXXVIIIA.

[0416] like Fig.37A and Fig.38AAs shown, at the boundary between the frame 41 and the horizontal strip 42, the frame first surface 41a of the frame 41 and the horizontal strip first surface 42a of the horizontal strip 42 can be continuous. For example, the frame 41 and the horizontal strip 42 can be made by machining one plate. In this case, by machining the plate so that the frame first surface 41a of the frame 41 and the horizontal strip first surface 42a of the horizontal strip 42 are composed of one surface of the plate, a continuous frame first surface 41a and horizontal strip first surface 42a can be formed.

[0417] Whether the first frame surface 41a of the frame 41 and the first horizontal stripe surface 42a of the horizontal stripe 42 are continuous can be determined by whether the first frame surface 41a and the first horizontal stripe surface 42a are located on the same plane around the boundary between the frame 41 and the horizontal stripe 42. Specifically, the positions of the first frame surface 41a and the second frame surface 41b in the normal direction of the first frame surface 41a are measured in the area around the boundary between the frame 41 and the horizontal stripe 42. The area around the boundary is the area between the first frame surface 41a and the second frame surface 41b. Fig.37A The area within the radius S1 of the connection point 42e shown in FIG. 1 is the area within the radius S1 of the center. When the position of the surrounding area of ​​the boundary in the normal direction of the frame first surface 41a is within the range of the average value ± the first threshold value, it is determined that the frame first surface 41a and the horizontal stripe first surface 42a are located on the same plane. The first threshold value is, for example, 0.5 mm.

[0418] The connection point 42e is the center point of the end 42d of the horizontal bar 42. The end 42d is defined as the portion where the extension line of the inner side surface 41e of the frame 41 connected to the horizontal bar 42 intersects with the horizontal bar 42 when viewed from above. Fig.37A In the example shown, the end 42d is the portion where the extension line of the inner side surface 41e of the first side 411 extending in the first direction D1 intersects with the first horizontal bar 421 extending in the second direction D2 when viewed from above. In addition, the connection point 42e is the center point of the end 42d in the first direction D1 where the inner side surface 41e extends. The radius S1 is, for example, 2.5 mm.

[0419] As a measuring device for measuring the positions of the frame first surface 41a and the frame second surface 41b in the normal direction of the frame first surface 41a, a laser displacement meter LK-G85 manufactured by KEYENCE can be used. The measurement conditions of LK-G85 are as follows.

[0420] ·Measurement interval: 100μm

[0421] When the frame 41 and the horizontal bar 42 are manufactured by machining one plate, a shape caused by machining may be generated at the connection portion where the frame 41 and the horizontal bar 42 are connected. Fig.37A As shown, the mask support body 40 includes a first connection portion 42 f that connects the inner side surface 41 e of the frame 41 and the horizontal bar side surface 42 c of the horizontal bar 42 in a plan view. Fig.37B4 is a plan view showing the first connection part 42f in an enlarged manner. For example, in the case of processing using a cutting tool, the first connection part 42f may include a transition part 42fa. The transition part 42fa is a portion of the mask support body 40 divided by an extension line H1 of the inner side surface 41e and an extension line H2 of the horizontal strip side surface 42c. When the first connection part 42f includes the transition part 42fa, the rigidity of the mask support body 40 is greater than the rigidity of the mask support body 40 when the first connection part 42f does not include the transition part 42fa. That is, the transition part 42fa can increase the rigidity of the mask support body 40.

[0422] The transition portion 42fa may have a curved portion having a first radius of curvature S2. The first radius of curvature S2 may be, for example, greater than 1.0 mm, greater than 1.5 mm, or greater than 2.0 mm. The first radius of curvature S2 may be, for example, less than 3.0 mm, less than 4.0 mm, or less than 5.0 mm. The range of the first radius of curvature S2 may be specified by the first group consisting of 1.0 mm, 1.5 mm, and 2.0 mm and / or the second group consisting of 3.0 mm, 4.0 mm, and 5.0 mm. The range of the first radius of curvature S2 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the first radius of curvature S2 may be specified by a combination of any two of the values ​​included in the first group. The range of the first radius of curvature S2 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be 1.0mm to 5.0mm, 1.0mm to 4.0mm, 1.0mm to 3.0mm, 1.0mm to 2.0mm, 1.0mm to 1.5mm, 1.5mm to 5.0mm, 1.5mm to 4.0mm, 1.5mm to 3.0mm, 1.5mm to 2.0mm, 2.0mm to 5.0mm, 2.0mm to 4.0mm, 2.0mm to 3.0mm, 3.0mm to 5.0mm, 3.0mm to 4.0mm, 4.0mm to 5.0mm. As a measuring device for measuring the first radius of curvature S2, AMIC-1710 manufactured by SINTOS-PRECISION can be utilized.

[0423] Although not shown in the drawings, the inner side surface 41e and the horizontal strip side surface 42c may be connected without passing through a bent portion.

[0424] like Fig.38AAs shown in the longitudinal cross-sectional view, the mask support body 40 includes a second connection portion 42 g connecting the inner side surface 41 e of the frame 41 and the horizontal bar second surface 42 b of the horizontal bar 42 . Fig.38B 4 is a cross-sectional view showing the second connection portion 42g in an enlarged manner. For example, in the case of processing using a cutting tool, the second connection portion 42g may include a transition portion 42ga. The transition portion 42ga is a portion of the mask support body 40 divided by an extension line H3 of the inner side surface 41e and an extension line H4 of the second horizontal surface 42b. When the second connection portion 42g includes the transition portion 42ga, the rigidity of the mask support body 40 is greater than when the second connection portion 42g does not include the transition portion 42ga. That is, the transition portion 42ga can increase the rigidity of the mask support body 40.

[0425] The transition portion 42ga may have a second radius of curvature S3. The second radius of curvature S3 may be, for example, greater than 1.0 mm, greater than 1.5 mm, or greater than 2.0 mm. The second radius of curvature S3 may be, for example, less than 3.0 mm, less than 4.0 mm, or less than 5.0 mm. The range of the second radius of curvature S3 may be specified by the first group consisting of 1.0 mm, 1.5 mm, and 2.0 mm and / or the second group consisting of 3.0 mm, 4.0 mm, and 5.0 mm. The range of the second radius of curvature S3 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the second radius of curvature S3 may be specified by a combination of any two of the values ​​included in the first group. The range of the second radius of curvature S3 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be 1.0mm to 5.0mm, 1.0mm to 4.0mm, 1.0mm to 3.0mm, 1.0mm to 2.0mm, 1.0mm to 1.5mm, 1.5mm to 5.0mm, 1.5mm to 4.0mm, 1.5mm to 3.0mm, 1.5mm to 2.0mm, 2.0mm to 5.0mm, 2.0mm to 4.0mm, 2.0mm to 3.0mm, 3.0mm to 5.0mm, 3.0mm to 4.0mm, 4.0mm to 5.0mm. As a measuring device for measuring the second radius of curvature S3, AMIC-1710 manufactured by SINTOS-PRECISION can be utilized.

[0426] Although not shown in the drawings, the inner side surface 41e and the horizontal bar second surface 42b may be connected without passing through a bent portion.

[0427] The opening 43 will be described. Since the horizontal bar 42 extends in a manner that crosses the opening 43, the opening 43 is divided into two or more regions when viewed from above. Fig.34 As shown, the opening 43 includes two or more first openings 43A. The two or more first openings 43A are arranged along the first direction D1.

[0428] like Fig.34 As shown, the profile of the first opening 43A may include: a pair of first edges 431 extending along the first direction D1, and a pair of second edges 432 extending along the second direction D2. At least one of the pair of first edges 431 may be formed by the inner side surface 41e of the first side 411. The pair of first edges 431 may both be formed by the inner side surface 41e of the first side 411. The second edge 432 may be formed by the inner side surface 41e of the second side 412 or the horizontal bar side surface 42c of the first horizontal bar 421.

[0429] The first opening 43A may overlap with the effective area 53 of the mask 50 in a plan view. Fig.33 As shown, in the state of the mask device 15, two or more effective regions 53 arranged along the second direction D2 can overlap with one first opening 43A in a plan view. Two or more effective regions 53 of the mask 50 can overlap with one first opening 43A.

[0430] The thickness T2 of the frame 41 may be, for example, greater than 5 mm, greater than 10 mm, greater than 15 mm, or greater than 20 mm. The thickness T2 of the frame 41 may be, for example, less than 25 mm, less than 30 mm, less than 35 mm, or less than 40 mm. The range of the thickness T2 of the frame 41 may be specified by the first group consisting of 5 mm, 10 mm, 15 mm, and 20 mm and / or the second group consisting of 25 mm, 30 mm, 35 mm, and 40 mm. The range of the thickness T2 of the frame 41 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T2 of the frame 41 may be specified by a combination of any two of the values ​​included in the first group. The range of the thickness T2 of the frame 41 may be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 5 mm and 40 mm, between 5 mm and 35 mm, between 5 mm and 30 mm, between 5 mm and 25 mm, between 5 mm and 20 mm, between 5 mm and 15 mm, between 5 mm and 10 mm, between 10 mm and 40 mm, between 10 mm and 35 mm, between 10 mm and 30 mm, between 10 mm and 25 mm, between 10 mm and 20 mm, between 10 mm and 15 mm, between 15 mm and 40 mm, It can be above 15mm and below 35mm, it can be above 15mm and below 30mm, it can be above 15mm and below 25mm, it can be above 15mm and below 20mm, it can be above 20mm and below 40mm, it can be above 20mm and below 35mm, it can be above 20mm and below 30mm, it can be above 20mm and below 25mm, it can be above 25mm and below 40mm, it can be above 25mm and below 35mm, it can be above 25mm and below 30mm, it can be above 30mm and below 40mm, it can be above 30mm and below 35mm, it can be above 35mm and below 40mm.

[0431] By setting the thickness T2 of the frame 41 to be 5 mm or more, deformation such as bending of the frame 41 can be suppressed. In addition, by setting the thickness T2 of the frame 41 to be 40 mm or less, the weight of the frame 41 can be suppressed from becoming too large. Thus, the handling of the mask support 40 can be improved. For example, a small lift can be used to carry the mask support 40.

[0432] The thickness T3 of the horizontal bar 42 may be, for example, not less than 50 μm, not less than 100 μm, not less than 200 μm, or not less than 300 μm. The thickness T3 of the horizontal bar 42 may be, for example, not more than 500 μm, not more than 700 μm, not more than 1 mm, or not more than 10 mm. The range of the thickness T3 of the horizontal bar 42 may be specified by the first group consisting of 50 μm, 100 μm, 200 μm, and 300 μm and / or the second group consisting of 500 μm, 700 μm, 1 mm, and 10 mm. The range of the thickness T3 of the horizontal bar 42 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T3 of the horizontal bar 42 may be specified by a combination of any two of the values ​​included in the first group. The range of the thickness T3 of the horizontal bar 42 may be specified by a combination of any two of the values ​​included in the second group. For example, it may be between 50 μm and 10 mm, between 50 μm and 1 mm, between 50 μm and 700 μm, between 50 μm and 500 μm, between 50 μm and 300 μm, between 50 μm and 200 μm, between 50 μm and 100 μm, between 100 μm and 10 mm, between 100 μm and 1 mm, between 100 μm and 700 μm, between 100 μm and 500 μm, between 100 μm and 300 μm, between 100 μm and 200 μm, or between 200 μm and 10 mm. It can be between 200μm and 1mm, between 200μm and 700μm, between 200μm and 500μm, between 200μm and 300μm, between 300μm and 10mm, between 300μm and 1mm, between 300μm and 700μm, between 300μm and 500μm, between 500μm and 10mm, between 500μm and 1mm, between 500μm and 700μm, between 700μm and 10mm, between 700μm and 1mm, or between 1mm and 10mm.

[0433] The thickness T3 of the horizontal bar 42 may be smaller than the thickness T2 of the frame 41. The thicker the horizontal bar 42 is, the more the amount of the vapor deposition material attached to the horizontal bar 42 increases during the vapor deposition process. By making the thickness T3 of the horizontal bar 42 smaller than the thickness T2 of the frame 41, it is possible to suppress the obstruction of the vapor deposition by the horizontal bar 42. Therefore, from the perspective of vapor deposition efficiency, it is preferred that the thickness T3 of the horizontal bar 42 is small.

[0434] On the other hand, the greater the thickness T3 of the horizontal bar 42, the higher the rigidity of the horizontal bar 42. In the present embodiment, the frame 41 and the horizontal bar 42 are integrally formed. Therefore, the increase in the rigidity of the horizontal bar 42 suppresses the deformation of the frame 41. However, the greater the thickness T3 of the horizontal bar 42, the greater the weight of the horizontal bar 42. The increase in the weight of the horizontal bar 42 causes the frame 41 to deform inward. This is because the frame 41 is pulled by the gravity acting on the horizontal bar 42. The inner side refers to the direction from the frame 41 toward the center of the opening 43. When increasing the thickness T3 of the horizontal bar 42 to suppress the deformation of the frame 41, it is preferable to consider not only the rigidity of the horizontal bar 42 but also the deformation of the frame 41 caused by the increase in the weight of the horizontal bar 42.

[0435] As shown in the embodiments described later, the amount of deformation of the frame 41 can have a minimum value determined by the relationship with the thickness T3 of the horizontal bar 42. When the amount of deformation of the frame 41 is at the minimum value, the amount of deformation suppression of the frame 41 based on the rigidity of the horizontal bar 42 is balanced with the amount of deformation of the frame 41 based on the self-weight of the horizontal bar 42. The thickness T3 when the amount of deformation of the frame 41 is at the minimum value is also referred to as the conversion thickness. When the thickness T3 is less than or equal to the conversion thickness, the greater the thickness T3 of the horizontal bar 42, the smaller the amount of deformation of the frame 41. On the other hand, when the thickness T3 is greater than the conversion thickness, the greater the thickness T3 of the horizontal bar 42, the greater the amount of deformation of the frame 41.

[0436] The ratio of the thickness T3 when the amount of deformation of the frame 41 is at the minimum value to the thickness T2 is also referred to as the conversion ratio. The conversion ratio can exist in the range of 0 < T3 / T2 < 1.

[0437] T3 / T2 may be, for example, greater than 0.1, greater than 0.2, greater than 0.3, or greater than 0.4. T3 / T2 may be, for example, less than 0.5, less than 0.6, less than 0.7, or less than 0.85. The range of T3 / T2 may be specified by the first group consisting of 0.1, 0.2, 0.3, and 0.4 and / or the second group consisting of 0.5, 0.6, 0.7, and 0.85. The range of T3 / T2 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of T3 / T2 may be specified by a combination of any two of the values ​​included in the first group. The range of T3 / T2 may be specified by a combination of any two of the values ​​included in the second group. For example, it may be from 0.1 to 0.85, from 0.1 to 0.7, from 0.1 to 0.6, from 0.1 to 0.5, from 0.1 to 0.4, from 0.1 to 0.3, from 0.1 to 0.2, from 0.2 to 0.85, from 0.2 to 0.7, from 0.2 to 0.6, from 0.2 to 0.5, from 0.2 to 0.4, from 0.2 to 0.3, from 0.3 to 0.85 , can be above 0.3 and below 0.7, can be above 0.3 and below 0.6, can be above 0.3 and below 0.5, can be above 0.3 and below 0.4, can be above 0.4 and below 0.85, can be above 0.4 and below 0.7, can be above 0.4 and below 0.6, can be above 0.4 and below 0.5, can be above 0.5 and below 0.85, can be above 0.5 and below 0.7, can be above 0.5 and below 0.6, can be above 0.6 and below 0.85, can be above 0.6 and below 0.7, can be above 0.7 and below 0.85.

[0438] A contact measurement method was used as a method for measuring the thickness T of the metal plate 55, the thickness T2 of the frame 41, and the thickness T3 of the horizontal bar 42. As the contact measurement method, a length gauge "MT271" manufactured by HEIDENHAIN with a ball bushing guide plunger was used.

[0439] A method of manufacturing the above-mentioned mask device 15 will be described. First, an example of a method of manufacturing the mask support 40 will be described.

[0440] First, if Fig.39As shown in FIG. 1 , a plate 47 including a first surface 47a and a second surface 47b located on the opposite side of the first surface 47a can be prepared. As a material of the plate 47, the same material as the metal plate 55 of the mask 50 can be used. For example, as a material of the plate 47, an iron alloy containing nickel can be used. The thickness T0 of the plate 47 is greater than or equal to the thickness T2 of the frame 41. The thickness T0 of the plate 47 can be the same as the thickness T2 of the frame 41. Fig.39 In the figure, the point marked with the symbol 42d indicates the position where the end 42d where the frame 41 and the horizontal bar 42 are connected appears.

[0441] Next, a processing step of processing the central region 47d of the plate 47 which is located further inward than the end 42d from the second surface 47b side using a cutting tool or a processing machine may be performed. Fig.40 As shown, the processing steps may include a first processing step in which the plate 47 is processed until the thickness T4 of the central region 47 d becomes equal to the thickness T3 of the horizontal strip 42 . Fig.41 The figure shows the state of the vehicle when viewed from the second surface 47b. Fig.40 The top view of the plate 47 shown. As the cutting tool for implementing the first processing step, a drill, a turning tool, a milling cutter, an end mill, etc. can be used. As the processing method implemented by the processing machine, laser processing, water plasma processing, wire cutting processing, etc. can be used.

[0442] The processing step may include a second processing step in which the central area 47d is partially processed from the second surface 47b side by using a cutting tool or a processing machine, thereby partially forming an opening from the second surface 47b to the first surface 47a in the central area 47d. In this case, the area remaining without forming the opening in the central area 47d constitutes the above-mentioned horizontal bar 4. As a cutting tool for implementing the second processing step, a drill, a turning tool, a milling cutter, an end mill, etc. can be used. As a processing method implemented by a processing machine, laser processing, water plasma processing, wire cutting processing, etc. can be used.

[0443] In this way, Fig.34 As shown, the mask support body 40 including the frame 41 and the horizontal bars 42 can be manufactured. The second processing step may be performed after the first processing step. Alternatively, the second processing step may be performed before the first processing step.

[0444] Next, a fixing process of fixing the mask 50 to the second side 412 of the frame 41 may be performed. For example, the end 51 of the mask 50 may be fixed to the first surface 41a of the frame at the second side 412 while a tension Tx is applied to the mask 50 in the first direction D1. As a method of fixing the mask 50 to the frame 41, for example, welding may be used. In the welding method, a laser may also be used. The laser may irradiate the end 51. The end 51 irradiated with the laser melts, and thus the end 51 may be welded to the first surface 41a of the frame at the second side 412. In this way, Fig.33 As shown, the mask device 15 including the mask support 40 and the mask 50 can be manufactured.

[0445] In the disclosed method, as described above, the mask support body 40 is manufactured by machining one plate 47. Therefore, the frame 41 and the horizontal bar 42 of the mask support body 40 are formed as one body. Therefore, compared with the case where the frame 41 and the horizontal bar 42 are separate components, the rigidity of the mask support body 40 in the direction in which the horizontal bar 42 extends can be improved. For example, in the case where the horizontal bar 42 includes the first horizontal bar 421 extending along the second direction D2, the rigidity of the mask support body 40 in the second direction D2 can be improved. Therefore, for example, it is possible to suppress the frame 41 of the mask support body 40 from being deformed in the second direction D2 due to the force received by the mask support body 40 from the mask 50. Thus, it is possible to suppress the position of the through hole 56 of the mask 50 fixed to the frame 41 from being deviated from the designed position. The designed position refers to the ideal position of the through hole 56.

[0446] Fig.42 1 is a cross-sectional view of a portion of the mask 50 of the mask device 15 in a state of being combined with the substrate 110. According to the disclosed method, it is possible to suppress the position of the through hole 56 of the mask 50 from being offset from the designed position. Therefore, the position accuracy of the first vapor deposition layer 130 composed of the vapor deposition material vapor deposited onto the substrate 110 through the through hole 56 can be improved.

[0447] An example of the advantage of high positional accuracy of the first vapor deposition layer 130 is described below. Fig.42 As shown, when the organic device 100 includes the insulating layer 160, the size of the insulating layer 160 in the surface direction of the substrate 110 can be set based on the position accuracy of the first vapor deposition layer 130 in the vapor deposition process. For example, the higher the position accuracy of the first vapor deposition layer 130, the smaller the size of the insulating layer 160 can be set. When the pixel density of the organic device 100 is constant, the smaller the size of the insulating layer 160, the larger the area of ​​the first electrode layer 120 and the first vapor deposition layer 130 can be. As a result, the driving efficiency of the organic device 100 can be improved, and the life of the organic device 100 can be extended.

[0448] When the frame first surface 41a of the frame 41 and the horizontal bar first surface 42a of the horizontal bar 42 are located on the same plane, it is considered to have an advantage that it is easy to control the position of the surface of the mask 50 supported from below by the horizontal bar 42 relative to the frame first surface 41a of the frame 41. Fig.42 As shown, in the vapor deposition process, it is easy to control the distance Z1 between the first surface 551 of the mask 50 and the first surface 111 of the substrate 110. Therefore, for example, it is easy to suppress or adjust the shadow in the vapor deposition process.

[0449] Next, the case where the frame 41 and the first horizontal bar 421 are integrally formed as in this embodiment is compared with the case where the frame 41 and the first horizontal bar 421 are integrally formed as in the above embodiment. Fig.13A A comparison will be made as to the case where the first horizontal bar 421 is formed of a member different from the frame 41 .

[0450] Fig.43 Yes Fig.13A A cross-sectional view of the mask device 15 when cut along the second direction D2. Fig.13A The first horizontal bar 421 of the mask device 15 is fixed to the first surface 41a side of the first side 411 of the frame 41 by welding. Fig.33 Compared with the first bar 421, Fig.13A The first horizontal bars 421 contribute little to the rigidity of the mask support 40 in the second direction D2.

[0451] In addition, due to Fig.13A The first horizontal stripe 421 is a component different from the frame 41 , and therefore, in the normal direction of the frame first surface 41 a of the frame 41 , there may be a deviation between the frame first surface 41 a and the horizontal stripe first surface 42 a of the first horizontal stripe 421 .

[0452] In contrast, Fig.33 In the mask device 15, since the frame 41 and the horizontal bar 42 are formed as one body, the rigidity of the mask support body 40 in the direction in which the horizontal bar 42 extends can be effectively improved. In addition, since the frame first surface 41a of the frame 41 and the horizontal bar first surface 42a of the horizontal bar 42 are located on the same plane, it is easy to control the position of the surface of the mask 50 relative to the frame first surface 41a of the frame 41.

[0453] Various changes can be made to the second embodiment described above. Hereinafter, other embodiments will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the following description, for parts that can be constructed in the same manner as the above embodiment, the same symbols as those used for the corresponding parts in the above embodiment are used. Repeated descriptions are omitted. In addition, when the effects obtained in the above embodiment can obviously also be obtained in the following embodiment, their descriptions are sometimes omitted.

[0454] Fig.441 is a plan view showing an example of the mask device 15 when viewed from the first surface 551 side of the mask 50 . Fig.45 It is shown from Fig.44 FIG. 4 is a diagram showing a state where the mask device 15 removes the mask 50. The horizontal bar 42 may include a second horizontal bar 422 connected to the inner side surface 41e of the second side 412 of the frame 41. The second horizontal bar 422 may extend along the first direction D1. For example, the second horizontal bar 422 may include a pair of horizontal bar side surfaces 42c extending along the first direction D1 when viewed from above, and the horizontal bar side surfaces 42c may be connected to the inner side surface 41e of the second side 412 of the frame 41. A plurality of second horizontal bars 422 may be arranged along the second direction D2. The length of the second horizontal bar 422 may be the same as the size L21 of the opening 43 of the frame 41 in the first direction D1.

[0455] Fig.46 is along Fig.44 A cross-sectional view of the mask device 15 taken along line XXXXVI-XXXXVI. Fig.47 is along Fig.44 The second horizontal bar 422 may overlap the gap between two masks 50 adjacent to each other in the second direction D2 when viewed from above. By providing the second horizontal bar 422, it is possible to prevent the deposition material passing through the gap between the two masks 50 from being attached to the substrate 110.

[0456] The first horizontal stripe surface 42a of the second horizontal stripe 422 may be in contact with the second surface 552 of the mask 50. Similar to the first side 411 described above, the second horizontal stripe 422 can also suppress the mask 50 from being bent due to its own weight.

[0457] Reference Fig.48A and Fig.49A The structure of the boundary between the second side 412 of the frame 41 and the second horizontal stripe 422 of the horizontal stripe 42 will be described. Fig.48A Yes Fig.45 FIG. 1 is a plan view showing an example of the mask support body 40 enlarged in a range surrounded by a dotted line and denoted by the symbol XXXXVIIIA. Fig.49A is along Fig.48A A cross-sectional view of the mask support 40 taken along line XXXXIXA-XXXXIXA.

[0458] like Fig.48A and Fig.49A As shown, the first frame surface 41a of the frame 41 and the first horizontal stripe surface 42a of the horizontal stripe 42 may be continuous at the boundary between the frame 41 and the horizontal stripe 42. For example, similar to the case of the first side 411, the first frame surface 41a and the first horizontal stripe surface 42a of the horizontal stripe 42 may be located on the same plane around the boundary between the second side 412 of the frame 41 and the second horizontal stripe 422 of the horizontal stripe 42.

[0459] like Fig.48A As shown, the mask support body 40 includes a first connecting portion 42 f that connects an inner side surface 41 e of the second side 412 of the frame 41 and a horizontal bar side surface 42 c of a second horizontal bar 422 of the horizontal bar 42 in a plan view. Fig.48B 4 is a plan view showing the first connection portion 42f in an enlarged manner. For example, when machining using a cutting tool is performed, the first connection portion 42f may include a transition portion 42fa, similarly to the above-mentioned embodiment. The transition portion 42fa may include a curved portion having a first curvature radius S2.

[0460] like Fig.49A As shown in the longitudinal cross-sectional view, the mask support body 40 includes a second connecting portion 42 g connecting the inner side surface 41 e of the second side 412 of the frame 41 and the row-bar second surface 42 b of the second row-bar 422 of the row-bar 42 . Fig.49B 4 is a cross-sectional view showing the second connection portion 42g in an enlarged manner. For example, when machining using a cutting tool is performed, the second connection portion 42g may include a transition portion 42ga, similarly to the above-mentioned embodiment. The transition portion 42ga may include a curved portion having a second curvature radius S3.

[0461] The opening 43 will be described. Since the horizontal bar 42 extends in a manner that crosses the opening 43, the opening 43 is divided into two or more regions when viewed from above. Fig.45 As shown, the opening 43 includes two or more second openings 43B. The two or more second openings 43B are along the second direction D2.

[0462] like Fig.45 As shown, the profile of the second opening 43B may include: a pair of first edges 431 extending along the first direction D1, and a pair of second edges 432 extending along the second direction D2. The first edge 431 may be formed by the inner side surface 41e of the first side 411 or the horizontal bar side surface 42c of the second horizontal bar 422. At least one of the pair of second edges 432 may be formed by the inner side surface 41e of the second side 412. The pair of second edges 432 may both be formed by the inner side surface 41e of the second side 412.

[0463] The second opening 43B may overlap with the effective area 53 of the mask 50 in a plan view. In the state of the mask device 15, two or more effective areas 53 arranged along the first direction D1 may overlap with one second opening 43B in a plan view. Two or more effective areas 53 of one mask 50 may overlap with one second opening 43B.

[0464] As with the mask support body 40 of the second embodiment described above, Figures 44 to 49BThe mask support body 40 shown can also be manufactured by machining one plate. Therefore, the frame 41 of the mask support body 40 is formed integrally with the horizontal bar 42. Therefore, compared with the case where the frame 41 and the horizontal bar 42 are separate components, the rigidity of the mask support body 40 in the direction in which the horizontal bar 42 extends can be improved. For example, in the case where the horizontal bar 42 includes a second horizontal bar 422 extending in the first direction D1, the rigidity of the mask support body 40 in the first direction D1 can be improved. Therefore, for example, it is possible to suppress the frame 41 of the mask support body 40 from being deformed in the first direction D1 due to the force received by the mask support body 40 from the mask 50. As a result, it is possible to suppress the position of the through hole 56 of the mask 50 fixed to the frame 41 from being deviated from the designed position.

[0465] In addition, when the first frame surface 41a of the second side 412 of the frame 41 and the first horizontal bar surface 42a of the second horizontal bar 422 of the horizontal bar 42 are located on the same plane, it is easy to control the position of the surface of the mask 50 supported from below by the horizontal bar 42 relative to the first frame surface 41a of the frame 41. Thus, it is easy to control the distance Z1 between the first surface 551 of the mask 50 and the first surface 111 of the substrate 110. Therefore, for example, it is easy to suppress or adjust the shadow in the vapor deposition process.

[0466] Similar to the above-mentioned embodiment, the thickness T3 of the horizontal bar 42 can be smaller than the thickness T2 of the frame 41. T3 / T2 can be, for example, greater than 0.1, greater than 0.2, greater than 0.3, or greater than 0.4. T3 / T2 can be, for example, less than 0.5, less than 0.6, less than 0.7, or less than 0.85. The range of T3 / T2 can be specified by the first group consisting of 0.1, 0.2, 0.3, and 0.4 and / or the second group consisting of 0.5, 0.6, 0.7, and 0.85. The range of T3 / T2 can be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of T3 / T2 can be specified by a combination of any two of the values ​​included in the first group. The range of T3 / T2 can be specified by a combination of any two of the values ​​included in the second group. For example, it may be from 0.1 to 0.85, from 0.1 to 0.7, from 0.1 to 0.6, from 0.1 to 0.5, from 0.1 to 0.4, from 0.1 to 0.3, from 0.1 to 0.2, from 0.2 to 0.85, from 0.2 to 0.7, from 0.2 to 0.6, from 0.2 to 0.5, from 0.2 to 0.4, from 0.2 to 0.3, from 0.3 to 0.85 , can be above 0.3 and below 0.7, can be above 0.3 and below 0.6, can be above 0.3 and below 0.5, can be above 0.3 and below 0.4, can be above 0.4 and below 0.85, can be above 0.4 and below 0.7, can be above 0.4 and below 0.6, can be above 0.4 and below 0.5, can be above 0.5 and below 0.85, can be above 0.5 and below 0.7, can be above 0.5 and below 0.6, can be above 0.6 and below 0.85, can be above 0.6 and below 0.7, can be above 0.7 and below 0.85.

[0467] Reference Figure 50 to Figure 53 Another example of the mask device 15 will be described. Here, a case where the mask device 15 includes the second row bar 422 formed of a member separate from the frame 41 will be described.

[0468] Fig.50 It is a top view showing an example of the mask device 15 . Fig.51 It is shown from Fig.50 FIG. 1 is a top view of the mask device 15 after the mask 50 is removed. Fig.52 is along Fig.50 A cross-sectional view of the mask device 15 taken along line XXXXXII-XXXXXII. Figure 50 to Figure 52The second horizontal bar 422 of the mask device 15 is fixed to the first surface 41a side of the second side 412 of the frame 41 by welding. Therefore, compared with the horizontal bar 42 formed integrally with the frame 41, Figure 50 to Figure 52 The contribution of the second horizontal bars 422 to the rigidity of the mask support 40 in the first direction D1 is small.

[0469] In addition, Figure 50 to Figure 52 When the second row bar 422 is fixed to the second side 412 of the frame 41 by welding, the welding region of the second row bar 422 may overlap with the mask 50 . Fig.53 FIG. 4 is a cross-sectional view showing the welded area 42x of the second horizontal bar 422 and its surroundings in an enlarged manner. Fig.53 As shown, when the welding area 42x of the second horizontal strip 422 is raised upwards more than the first frame surface 41a of the frame 41, a portion of the mask 50 is pressed upwards by the welding area 42x. Fig.53 As shown, a gap may be easily generated between the second surface 552 of the mask 50 and the row-bar first surface 42 a of the second row-bar 422 .

[0470] In contrast, Figures 44 to 49B In the example shown, since the frame 41 and the horizontal bar 42 are integrally formed, the rigidity of the mask support 40 in the direction in which the horizontal bar 42 extends can be effectively improved. In addition, since the first frame surface 41a of the frame 41 and the first horizontal bar surface 42a of the horizontal bar 42 are located on the same plane, it is easy to control the position of the surface of the mask 50 relative to the first frame surface 41a of the frame 41.

[0471] Reference Figures 54 to 60 An example in which the mask support body 40 of the mask device 15 includes both the first row bars 421 and the second row bars 422 described above will be described.

[0472] Fig.54 It is a top view showing an example of the mask device 15 . Fig.55 It is shown from Fig.54 4 is a top view of a state where the mask device 15 is removed from the mask 50. The horizontal bar 42 may include a first horizontal bar 421 connected to the first side 411 of the frame 41, and a second horizontal bar 422 connected to the second side 412 of the frame 41. The first horizontal bar 421 may extend from one first side 411 to the other first side 411 along the second direction D2. The second horizontal bar 422 may extend from one second side 412 to the other second side 412 along the first direction D1.

[0473] Fig.56 is along Fig.54 A cross-sectional view of the mask device 15 taken along line XXXXXVI-XXXXXVI. Fig.57 is along Fig.54The first row bar 421 and the second row bar 422 may be in contact with the second surface 552 of the mask 50.

[0474] At the boundary between the frame 41 and the horizontal strip 42, the first frame surface 41a of the frame 41 and the first horizontal strip surface 42a of the horizontal strip 42 may be continuous. The structure of the boundary between the first side 411 of the frame 41 and the first horizontal strip 421 of the horizontal strip 42 is similar to Fig.37A and Fig.38A The structure of the boundary between the second side 412 of the frame 41 and the second horizontal bar 422 of the horizontal bar 42 is the same as that of the above-mentioned embodiment shown in FIG. Fig.48A and Fig.49A The above-described embodiments are the same as those described above, and thus description thereof will be omitted.

[0475] Reference Fig.58A The structure of the connection portion between the first horizontal cross-piece 421 and the second horizontal cross-piece 422 of the horizontal cross-piece 42 will be described. Fig.58A Yes Fig.55 FIG. 1 is a plan view showing an example of the mask support body 40 enlarged in a range surrounded by a dotted line and denoted by a reference numeral XXXXXVIIIA.

[0476] The first horizontal stripe surface 42a of the first horizontal stripe 421 and the first horizontal stripe surface 42a of the second horizontal stripe 422 may be located on the same plane. Fig.58A As shown, in the region within the radius S4 centered at the intersection 42i of the first horizontal bar 421 and the second horizontal bar 422, the position of the horizontal bar first surface 42a in the normal direction is within the range of the average value ± the second threshold. The second threshold is, for example, 0.5 μm. The radius S4 is, for example, 10 mm.

[0477] like Fig.58A As shown, the mask support body 40 includes a third connecting portion 42 h that connects the row side surface 42 c of the first row bar 421 and the row side surface 42 c of the second row bar 422 of the frame 41 in a plan view. Fig.58B 4 is a top view showing the third connecting portion 42h in an enlarged manner. For example, in the case of processing using a cutting tool, the third connecting portion 42h may include a transition portion 42ha. The transition portion 42ha is a portion of the horizontal bar 42 divided by an extension line H5 of the horizontal bar side surface 42c of the first horizontal bar 421 and an extension line H6 of the horizontal bar side surface 42c of the second horizontal bar 422. When the third connecting portion 42h includes the transition portion 42ha, the rigidity of the horizontal bar 42 is greater than when the third connecting portion 42h does not include the transition portion 42ha. That is, the transition portion 42ha can improve the rigidity of the horizontal bar 42.

[0478] The transition portion 42ha may have a curved portion having a third radius of curvature S5. The third radius of curvature S5 may be, for example, greater than 10 μm, greater than 100 μm, greater than 1 mm, or greater than 2 mm. The third radius of curvature S5 may be, for example, less than 3 mm, less than 5 mm, less than 10 mm, or less than 20 mm. The range of the third radius of curvature S5 may be specified by the first group consisting of 10 μm, 100 μm, 1 mm, and 2 mm and / or the second group consisting of 3 mm, 5 mm, 10 mm, and 20 mm. The range of the third radius of curvature S5 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the third radius of curvature S5 may be specified by a combination of any two of the values ​​included in the first group. The range of the third radius of curvature S5 may be specified by a combination of any two of the values ​​included in the second group. For example, it may be between 10 μm and 20 mm, between 10 μm and 10 mm, between 10 μm and 5 mm, between 10 μm and 3 mm, between 10 μm and 2 mm, between 10 μm and 1 mm, between 10 μm and 100 μm, between 100 μm and 20 mm, between 100 μm and 10 mm, between 100 μm and 5 mm, between 100 μm and 3 mm, between 100 μm and 2 mm, between 100 μm and 1 mm, or between 1 mm and 1 m. As a measuring instrument for measuring the third radius of curvature S3, AMIC-1710 manufactured by SINTOS-PRECISION can be used.

[0479] The opening 43 is described below. In this embodiment, the opening 43 is also divided into two or more areas by the horizontal strip 42 when viewed from above. Fig.55 As shown, the opening 43 includes a plurality of third openings 43C. The plurality of third openings 43C are arranged along the first direction D1 and the second direction D2.

[0480] like Fig.55As shown, the profile of the third opening 43C may include a pair of first edges 431 extending along the first direction D1, and a pair of second edges 432 extending along the second direction D2. The pair of first edges 431 may both be formed by the horizontal bar side surface 42c of the second horizontal bar 422. The pair of second edges 432 may both be formed by the horizontal bar side surface 42c of the first horizontal bar 421.

[0481] The third opening 43C may overlap with the effective area 53 of the mask 50 in a plan view. In the state of the mask device 15, one effective area 53 may overlap with one third opening 43C in a plan view. Two or more effective areas 53 may overlap with one third opening 43C in a plan view. For example, two or more effective areas 53 arranged along the first direction D1 may overlap with one third opening 43C. For example, two or more effective areas 53 arranged along the second direction D2 may overlap with one third opening 43C.

[0482] Compared with Figure 1 Fig.42 and Figures 44 to 49A Similarly, the mask support 40 of the above-mentioned embodiment shown in FIG. Figure 54 to Figure 58A The mask support body 40 shown can also be made by machining one plate. Therefore, the frame 41 of the mask support body 40 is formed integrally with the horizontal bar 42. Therefore, compared with the case where the frame 41 and the horizontal bar 42 are separate components, the rigidity of the mask support body 40 in the direction in which the horizontal bar 42 extends can be improved. For example, in the case where the horizontal bar 42 includes a second horizontal bar 422 extending in the first direction D1 and a first horizontal bar 421 extending in the second direction D2, the rigidity of the mask support body 40 in the first direction D1 and the second direction D2 can be improved. Therefore, for example, it is possible to suppress the frame 41 of the mask support body 40 from being deformed in the first direction D1 and the second direction D2 due to the force received by the mask support body 40 from the mask 50. As a result, it is possible to suppress the position of the through hole 56 of the mask 50 fixed to the frame 41 from being deviated from the designed position.

[0483] In addition, since the mask support 40 is manufactured by machining one plate, the first horizontal bar surface 42a of the first horizontal bar 421 of the horizontal bar 42 can be continuous with the first horizontal bar surface 42a of the second horizontal bar 422. For example, the first horizontal bar surface 42a of the first horizontal bar 421 and the first horizontal bar surface 42a of the second horizontal bar 422 can be located on the same plane. Therefore, it is easy to control the position of the surface of the mask 50 supported from below by the horizontal bar 42 relative to the first frame surface 41a of the frame 41. Thus, it is easy to control the distance Z1 between the first surface 551 of the mask 50 and the first surface 111 of the substrate 110. Therefore, for example, it is easy to suppress or adjust the shadow in the vapor deposition process.

[0484] Similar to the above-mentioned embodiment, the thickness T3 of the horizontal bar 42 can be smaller than the thickness T2 of the frame 41. T3 / T2 can be, for example, greater than 0.1, greater than 0.2, greater than 0.3, or greater than 0.4. T3 / T2 can be, for example, less than 0.5, less than 0.6, less than 0.7, or less than 0.85. The range of T3 / T2 can be specified by the first group consisting of 0.1, 0.2, 0.3, and 0.4 and / or the second group consisting of 0.5, 0.6, 0.7, and 0.85. The range of T3 / T2 can be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of T3 / T2 can be specified by a combination of any two of the values ​​included in the first group. The range of T3 / T2 can be specified by a combination of any two of the values ​​included in the second group. For example, it may be from 0.1 to 0.85, from 0.1 to 0.7, from 0.1 to 0.6, from 0.1 to 0.5, from 0.1 to 0.4, from 0.1 to 0.3, from 0.1 to 0.2, from 0.2 to 0.85, from 0.2 to 0.7, from 0.2 to 0.6, from 0.2 to 0.5, from 0.2 to 0.4, from 0.2 to 0.3, from 0.3 to 0.85 , can be above 0.3 and below 0.7, can be above 0.3 and below 0.6, can be above 0.3 and below 0.5, can be above 0.3 and below 0.4, can be above 0.4 and below 0.85, can be above 0.4 and below 0.7, can be above 0.4 and below 0.6, can be above 0.4 and below 0.5, can be above 0.5 and below 0.85, can be above 0.5 and below 0.7, can be above 0.5 and below 0.6, can be above 0.6 and below 0.85, can be above 0.6 and below 0.7, can be above 0.7 and below 0.85.

[0485] Reference Figures 59 to 62 Another example of the mask device 15 will be described. Here, a case where the mask device 15 includes the first row bar 421 and the second row bar 422 which are formed of components separate from the frame 41 will be described.

[0486] Fig.59 and Fig.60 Each of them is a plan view showing a mask support body 40 including a first row bar 421 and a second row bar 422 which are formed of components separate from the frame 41. Fig.59 In the example shown, the first horizontal stripe 421 is located between the first frame surface 41a of the frame 41 and the second horizontal stripe 422. Fig.60In the illustrated example, the second horizontal stripe 422 is located between the first frame surface 41 a of the frame 41 and the first horizontal stripe 421 .

[0487] Fig.61 It shows that it will have Fig.59 The mask device 15 of the mask carrier 40 is shown along Fig.59 A cross-sectional view of the XXXXXXI-XXXXXXI line. Fig.59 and Fig.61 In the illustrated embodiment, the second horizontal bar 422 is located between the first horizontal bar 421 and the second surface 552 of the mask 50. In this case, the mask 50 is supported from below because the end in the second direction D2 contacts the second horizontal bar 422, but the central portion of the mask 50 in the second direction D2 does not contact at all. Therefore, it is considered that the mask 50 is bent along the width direction of the mask 50, that is, the second direction D2.

[0488] Fig.62 It shows that it will have Fig.60 The mask device 15 of the mask carrier 40 is shown along Fig.60 A cross-sectional view of the XXXXXXII-XXXXXXII line. Fig.60 and Fig.62 In the illustrated embodiment, the first row bar 421 is located between the second row bar 422 and the second surface 552 of the mask 50. Therefore, there is a gap between two masks 50 adjacent in the second direction D2 and a gap between the second row bars 422 corresponding to the thickness of the first row bar 421 in the thickness direction of the mask 50.

[0489] In contrast, Figure 54 to Figure 58B In the example shown, the frame 41 and the horizontal bar 42 are formed as one body. Therefore, the rigidity of the mask support 40 in the direction in which the horizontal bar 42 extends can be effectively improved. In addition, the first horizontal bar 421 and the second horizontal bar 422 of the horizontal bar 42 are formed as one body. Therefore, the first horizontal bar surface 42a of the first horizontal bar 421 and the first horizontal bar surface 42a of the second horizontal bar 422 can be located on the same plane. Thus, it is possible to suppress the generation of a gap between the first horizontal bar 421 and the second horizontal bar 422 of the horizontal bar 42 and the second surface 552 of the mask 50. Therefore, the mask 50 can be effectively supported from below by the horizontal bar 42. In addition, it is possible to suppress the evaporation material from entering the gap between the second surface 552 of the mask 50 and the horizontal bar 42.

[0490] Fig.63 1 is a cross-sectional view showing an example of the mask device 15 when cut along the second direction D2. Fig.63As shown, the second horizontal bar 422 of the horizontal bar 42 may include a portion where the width WA3 of the horizontal bar 42 decreases as it approaches the second horizontal bar surface 42b in the thickness direction of the horizontal bar 42. In addition, the width WA31 of the horizontal bar 42 in the first horizontal bar surface 42a may be greater than the width WA32 of the horizontal bar 42 in the second horizontal bar surface 42b.

[0491] By making the width WA3 of the horizontal strip 42 smaller as it approaches the horizontal strip second surface 42b in the thickness direction of the horizontal strip 42, it is possible to suppress the deposition material from adhering to the horizontal strip 42 during the deposition process. In addition, by making the width WA31 of the horizontal strip 42 on the horizontal strip first surface 42a larger, it is possible to increase the rigidity of the horizontal strip 42. Fig.63 The embodiment shown can, for example, suppress adhesion of the vapor deposition material to the horizontal bar 42 during the vapor deposition step while maintaining the rigidity of the horizontal bar 42 .

[0492] Fig.64 1 is a cross-sectional view showing an example of the mask device 15 when cut along the first direction D1. Fig.64 As shown, the first horizontal bar 421 of the horizontal bar 42 may include a portion where the width WA3 of the horizontal bar 42 decreases as it approaches the second horizontal bar surface 42b in the thickness direction of the horizontal bar 42. The width WA31 of the horizontal bar 42 in the first horizontal bar surface 42a may be greater than the width WA32 of the horizontal bar 42 in the second horizontal bar surface 42b.

[0493] according to Fig.64 The method shown, with Fig.63 In the illustrated embodiment, it is possible to suppress adhesion of the vapor deposition material to the horizontal bar 42 during the vapor deposition step while maintaining the rigidity of the horizontal bar 42 .

[0494] like Fig.65 As shown, the first side 411 of the frame 41 may include a third frame surface 41h, which is located between the first frame surface 41a and the second frame surface 41b in the thickness direction of the frame 41 and is located at a position further outward than the first frame surface 41a when viewed from above. In addition, the inner side surface 41e of the first side 411 may include an inclined surface 41g that moves more outward as it approaches the second frame surface 41b in the thickness direction of the frame 41. "Outside" refers to a side away from the center point of the opening 43 of the frame 41 when viewed from above.

[0495] Since the inner side surface 41 e of the first side 411 includes the inclined surface 41 g , it is possible to suppress the deposition material from being attached to the inner side surface 41 e of the first side 411 during the deposition step.

[0496] like Fig.66As shown, the second side 412 of the frame 41 may include a third frame surface 41h, which is located between the first frame surface 41a and the second frame surface 41b in the thickness direction of the frame 41 and is located further outward than the first frame surface 41a in a plan view. The inner side surface 41e of the second side 412 may include an inclined surface 41g that moves outward as it approaches the second frame surface 41b in the thickness direction of the frame 41.

[0497] By making the inner side surface 41e of the second side 412 include the inclined surface 41g, Fig.65 The same is true for the first side 411 shown, and it is possible to suppress the deposition material from being attached to the inner side surface 41 e of the first side 411 during the deposition step.

[0498] Fig.67 1 is a plan view showing an example of the master mask device 15A. The master mask device 15A may include the above-mentioned mask support body 40 in which the frame 41 and the horizontal bars 42 are integrally configured.

[0499] The standard mask device 15A is used to evaluate the characteristics of the first vapor deposition chamber 10. Therefore, high precision is required for the components of the standard mask device 15A. As described above, the mask support body 40 including the frame 41 and the horizontal bar 42 formed as one body has high rigidity in the direction in which the horizontal bar 42 extends, compared to the case where the frame 41 and the horizontal bar 42 are separate components. Therefore, it is possible to suppress the deformation of the frame 41 of the mask support body 40 in the second direction D2 due to the force received by the mask support body 40 from the standard mask 50A. Thus, it is possible to suppress the position of the through hole 56 of the standard mask 50A from deviating from the designed position. Therefore, the characteristics of the first vapor deposition chamber 10 can be evaluated more accurately.

[0500] When the first frame surface 41a of the frame 41 and the first horizontal bar surface 42a of the horizontal bar 42 are located on the same plane, it is easy to control the position of the surface of the standard mask 50A supported from below by the horizontal bar 42 relative to the first frame surface 41a of the frame 41. As a result, in the vapor deposition process, it is easy to control the distance Z1 between the first surface 551 of the mask 50 and the first surface 111 of the substrate 110. Therefore, for example, it is easy to suppress or adjust the shadow in the vapor deposition process. Therefore, the characteristics of the first vapor deposition chamber 10 can be evaluated more accurately.

[0501] exist Fig.67In the example shown, the horizontal bar 42 of the mask support 40 of the standard mask device 15A includes a first horizontal bar 421 connected to the inner side surface 41e of the first side 411. Although not shown, the horizontal bar 42 of the mask support 40 of the standard mask device 15A may include a second horizontal bar 422 connected to the inner side surface 41e of the second side 412. Although not shown, the horizontal bar 42 of the mask support 40 of the standard mask device 15A may include a first horizontal bar 421 connected to the inner side surface 41e of the first side 411, and a second horizontal bar 422 connected to the inner side surface 41e of the second side 412.

[0502] Next, the second embodiment will be described in more detail using examples, but the second embodiment is not limited to the description of the following examples unless the scope of the invention is exceeded.

[0503] The deformation of the frame 41 was verified by simulation.

[0504] like Fig.68 As shown, a mask support body 40 is designed to include a frame 41 and a horizontal bar 42. The frame first surface 41a of the frame 41 and the horizontal bar first surface 42a of the horizontal bar 42 are located on the same plane. The material constituting the frame 41 and the horizontal bar 42 is an iron alloy containing 36 weight % of nickel. The structure, size, etc. of the frame 41 and the horizontal bar 42 are as follows.

[0505] Length L1 of the first side 411: 1105mm

[0506] Length L2 of the second side 412: 1701mm

[0507] Number of roots of the first horizontal bar 421: 7

[0508] ·Width WA5 of the first horizontal stripe 421: 3 mm

[0509] ·Number of the second horizontal stripe 422: 22

[0510] ·Width WA6 of the second horizontal strip 422: 5.5 mm

[0511] Thickness T2 of frame 41: 30 mm

[0512] ·Thickness T3 of horizontal strip 42: 0.0mm, 1.7mm, 4.4mm, 7.0mm, 9.7mm, 12.3mm, 15.0mm, 20.0mm, 25.0mm, 30.0mm

[0513] Through simulation calculation, Fig.68FIG. 4 is a diagram showing the deformation K of the second side 412 when a force Tx is applied to the second side 412 in the first direction D1. The force Tx is equivalent to the force received by the second side 412 from the mask 50. The force Tx is set to 27 N. ADINA manufactured by ADINAR&D was used as simulation software. The simulation results are shown in FIG. Fig.69 .

[0514] Fig.70 and Fig.71 : shows the relationship between the thickness T3 of the horizontal bar 42 and the deformation K. The horizontal axis is the ratio of the thickness T3 of the horizontal bar 42 to the thickness T2 of the frame 41. It is predicted that the ratio T3 / T2 when the deformation K of the frame 41 is the minimum value MIN, that is, the minimum ratio is 0.40 or more and 0.60 or less.

[0515] Next, a third embodiment will be described. The third embodiment has a feature related to a method of fixing the mask 50 to the mask support 40 .

[0516] An object of the third embodiment is to provide a method for manufacturing a mask apparatus and a method for manufacturing an organic device, which can shorten the time required for positioning a mask with respect to a frame.

[0517] The manufacturing method of the mask device of the third embodiment may include: a frame preparation step, a mask preparation step, a configuration step, a mask alignment step, and a bonding step. In the frame preparation step, the following frame may be prepared, which includes: a frame first surface; a frame second surface located on the opposite side of the frame first surface; an opening extending from the frame first surface to the frame second surface; a frame wall surface located at a position further outward than the opening and extending from the frame first surface toward the frame second surface when viewed from above, the frame wall surface including a first wall surface edge located on the frame first surface side and a second wall surface edge located on the frame second surface side; and a frame third surface extending outward from the second wall surface edge along the frame second surface when viewed from above. In the mask preparation step, the following mask may be prepared, which includes: a first mask edge located at one side edge in the second direction; a second mask edge located at the other side edge in the second direction; a pair of end portions located on both sides in the first direction orthogonal to the second direction; and a through hole located between the pair of end portions. In the configuration step, the mask may be configured on the frame in such a manner that the end of the mask overlaps with the first wall edge when viewed from above, and the first wall edge extends in a straight line from the first mask edge of the mask to the second mask edge along the second direction. In the mask alignment step, after the configuration step, the mask may be aligned with respect to the frame while being pulled and pressed against the frame by bonding tension. In the bonding step, after the mask alignment step, the mask may be bonded to the frame while being pulled and pressed against the frame by the bonding tension.

[0518] The method for manufacturing an organic device according to the third embodiment may include: a device preparation step of preparing a mask device by the method for manufacturing a mask device, a bonding step, and a vapor deposition step. In the bonding step, the mask of the mask device may be bonded to the substrate. In the vapor deposition step, the vapor deposition material may be vapor-deposited on the substrate through the through-holes of the mask to form a vapor deposition layer.

[0519] The mask device of the third embodiment may include a frame and a mask disposed on the frame. The frame may include a first frame surface; a second frame surface located on the opposite side of the first frame surface; an opening extending from the first frame surface to the second frame surface; a frame wall surface located at a position further outward than the opening and extending from the first frame surface toward the second frame surface when viewed from above, the frame wall surface including a first wall surface edge located on the first frame surface side and a second wall surface edge located on the second frame surface side; and a third frame surface extending outward from the second wall surface edge along the second frame surface when viewed from above. The mask may include: a first mask edge located at one side edge in the second direction; a second mask edge located at another side edge in the second direction; a pair of end portions located on both sides of the first direction orthogonal to the second direction and overlapping with the first frame surface; and a through hole located between the pair of end portions. The mask has a pair of mask ends located on both sides of the first direction and further inward than the first wall surface edge. The first wall surface edge may extend in a straight line along the first direction from an extension line of the first mask edge of the mask to an extension line of the second mask edge.

[0520] The intermediate body of the mask device of the third embodiment comprises a frame and a mask arranged on the frame. The frame may have: a first frame surface; a second frame surface located on the opposite side of the first frame surface; an opening extending from the first frame surface to the second frame surface; a frame wall surface located at a position further outward than the opening and extending from the first frame surface toward the second frame surface when viewed from above, the frame wall surface including a first wall surface edge located on the first frame surface side and a second wall surface edge located on the second frame surface side; and a third frame surface extending outward from the second wall surface edge along the second frame surface when viewed from above. The mask may have: a first mask edge located at one side edge in the second direction; a second mask edge located at the other side edge in the second direction; a pair of end portions located on both sides in the first direction orthogonal to the second direction and overlapping with the first frame surface; and a through hole located between the pair of end portions. The first wall surface edge may overlap with an end portion of the mask in a plan view, and extend in a straight line from a first mask edge of the mask to a second mask edge along the first direction.

[0521] According to the third embodiment, the time required for positioning the mask with respect to the frame can be shortened.

[0522] A first aspect of the third embodiment relates to a method for manufacturing a mask device, comprising the following steps:

[0523] A frame preparation step, preparing the following frame, the frame comprising: a frame first surface; a frame second surface located on the opposite side of the frame first surface; an opening extending from the frame first surface to the frame second surface; a frame wall surface located at a position further outward than the opening when viewed from above and extending from the frame first surface toward the frame second surface, the frame wall surface including a first wall surface edge located on the frame first surface side and a second wall surface edge located on the frame second surface side; and a frame third surface extending outward from the second wall surface edge along the frame second surface when viewed from above;

[0524] A mask preparation step of preparing a mask having: a first mask edge located at one side edge in a second direction; a second mask edge located at another side edge in the second direction; a pair of end portions located at both sides in a first direction orthogonal to the second direction; and a through hole located between the pair of end portions;

[0525] a disposing step of disposing the mask on the frame in such a manner that the end of the mask overlaps with the first wall edge when viewed from above, and the first wall edge extends in a straight line from the first mask edge of the mask to the second mask edge along the second direction;

[0526] a mask aligning step of aligning the mask with respect to the frame while pulling the mask in the first direction and pressing the mask against the frame by bonding tension after the arranging step; and

[0527] The bonding step is to bond the mask to the frame while pulling the mask in the first direction and pressing the mask to the frame by the bonding tension after the mask alignment step.

[0528] In the second mode of the third embodiment, in the manufacturing method of the mask device of the first mode, the mask alignment process may have a first confirmation process, in which the position of the through hole relative to the frame is confirmed while applying the bonding tension to the mask and pressing the mask against the frame.

[0529] In the third mode of the third embodiment, in the manufacturing method of the mask device of the above-mentioned second mode, the above-mentioned mask alignment process may have a moving process, in which the above-mentioned mask is applied with the above-mentioned bonding tension based on the position confirmation result of the above-mentioned through hole in the above-mentioned first confirmation process and the above-mentioned mask is pressed against the above-mentioned frame, while the above-mentioned mask is moved in any direction within the two-dimensional plane defined by the above-mentioned second direction and the above-mentioned first direction.

[0530] In the 4th mode of the 3rd embodiment, in the manufacturing method of each mask device of the above-mentioned 1st mode to the above-mentioned 3rd mode, the above-mentioned mask alignment process may have a second confirmation process, in which, after the above-mentioned moving process, while applying bonding tension to the above-mentioned mask and pressing the above-mentioned mask against the above-mentioned frame, the position of the through hole relative to the above-mentioned frame is confirmed.

[0531] In the fifth mode of the third embodiment, in the manufacturing method of the mask device of the first mode, the mask alignment process may include: a third confirmation process, confirming the position of the through hole relative to the frame while pressing the mask to the frame; a tension adjustment process, adjusting the tension applied to the mask based on the position confirmation result of the through hole in the third confirmation process; and a fourth confirmation process, after the tension adjustment process, confirming the position of the through hole relative to the frame while applying the bonding tension to the mask and pressing the mask to the frame.

[0532] In a sixth aspect of the third embodiment, in the manufacturing method of each mask device of the first aspect to the fifth aspect, a cutting step of cutting off the end of the mask may be further provided after the bonding step. In the bonding step, a bonding portion extending from the end of the mask to the frame may be formed. In the cutting step, the mask may be cut at a position of the end of the mask that is further outward in the first direction than the bonding portion, and a portion further outward than the cutting position may be removed.

[0533] In a seventh aspect of the third embodiment, in the method for manufacturing a mask device according to the sixth aspect, a frame groove extending in the second direction may be provided on the frame first surface of the frame. In the cutting step, the mask may be cut along the frame groove.

[0534] In the 8th mode of the 3rd embodiment, in the manufacturing method of each mask device of the above-mentioned 1st mode to the above-mentioned 7th mode, when more than two masks arranged along the above-mentioned second direction are joined to the above-mentioned frame, the above-mentioned first wall edge of the above-mentioned frame can extend in a straight line from one of the above-mentioned masks to another above-mentioned mask along the above-mentioned second direction.

[0535] In the 9th mode of the 3rd embodiment, in the manufacturing method of the mask device of the above-mentioned 8th mode, the above-mentioned first wall edge of the above-mentioned frame can extend in a straight line along the above-mentioned second direction from the above-mentioned mask at the position closest to one side in the above-mentioned second direction to the above-mentioned mask located on the opposite side of the mask.

[0536] The first aspect to the ninth aspect may be mask devices manufactured by the methods for manufacturing mask devices of the first aspect to the ninth aspect, respectively.

[0537] A tenth aspect of the third embodiment relates to a method for manufacturing an organic device, comprising the following steps:

[0538] a device preparation step of preparing the mask device by using the manufacturing method of each mask device of the first to ninth modes;

[0539] a bonding step of bonding the mask of the mask device to the substrate; and

[0540] The vapor deposition step forms a vapor deposition layer by vapor depositing a vapor deposition material onto the substrate through the through holes of the mask.

[0541] As an eleventh aspect of the third embodiment, in the bonding step of the method for manufacturing an organic device according to the tenth aspect, the substrate may be held from above by an electrostatic chuck.

[0542] The tenth aspect to the eleventh aspect may be organic devices manufactured by the methods for manufacturing organic devices of the tenth aspect to the eleventh aspect, respectively.

[0543] A twelfth aspect of the third embodiment relates to a mask device including a frame and a mask provided on the frame.

[0544] The frame comprises: a first frame surface; a second frame surface located on the opposite side of the first frame surface; an opening extending from the first frame surface to the second frame surface; a frame wall surface located at a position further outward than the opening when viewed from above and extending from the first frame surface toward the second frame surface, the frame wall surface comprising a first wall surface edge located on the first frame surface side and a second wall surface edge located on the second frame surface side; and a third frame surface extending outward from the second wall surface edge along the second frame surface when viewed from above,

[0545] The mask has: a first mask edge located at one side edge in the second direction; a second mask edge located at the other side edge in the second direction; a pair of end portions located at both sides in the first direction orthogonal to the second direction and overlapping with the first surface of the frame; and a through hole located between the pair of end portions.

[0546] The mask has a pair of mask ends located on both sides in the first direction and further inside than the first wall edge.

[0547] The first wall surface edge extends in a straight line from an extension line of the first mask edge of the mask to an extension line of the second mask edge along the first direction.

[0548] In a thirteenth aspect of the third embodiment, in the mask device of the twelfth aspect, two or more masks arranged in the second direction may be provided. The first wall edge may extend linearly from the mask to another mask in the second direction.

[0549] In a fourteenth aspect of the third embodiment, in the mask device of the thirteenth aspect, the first wall edge may extend in a straight line along the second direction from the mask located most to one side in the second direction to the mask located most opposite to the mask.

[0550] In a fifteenth aspect of the third embodiment, in each of the mask devices of the twelfth to fourteenth aspects, a frame groove extending in the second direction may be provided on the frame first surface of the frame.

[0551] A sixteenth aspect of the third embodiment relates to an intermediate of a mask device including a frame and a mask provided on the frame.

[0552] The frame comprises: a first frame surface; a second frame surface located on the opposite side of the first frame surface; an opening extending from the first frame surface to the second frame surface; a frame wall surface located at a position further outward than the opening when viewed from above and extending from the first frame surface toward the second frame surface, the frame wall surface comprising a first wall surface edge located on the first frame surface side and a second wall surface edge located on the second frame surface side; and a third frame surface extending outward from the second wall surface edge along the second frame surface when viewed from above,

[0553] The mask has: a first mask edge located at one side edge in the second direction; a second mask edge located at the other side edge in the second direction; a pair of end portions located at both sides in the first direction orthogonal to the second direction and overlapping with the first surface of the frame; and a through hole located between the pair of end portions.

[0554] The first wall surface edge overlaps with the end portion of the mask in a plan view, and extends in a straight line from the first mask edge of the mask to the second mask edge along the first direction.

[0555] Hereinafter, the third embodiment will be described in detail with reference to the accompanying drawings. It should be noted that the method shown below is an example of the third embodiment, and the third embodiment is not limited to these methods for interpretation. In the following description and the accompanying drawings used in the following description, for parts that can be constructed in the same manner as the above-mentioned embodiment, the same symbols as those used for the corresponding parts in the above-mentioned embodiment are used. Repeated descriptions are omitted. In addition, when the effects obtained in the above-mentioned embodiment can obviously also be obtained in the following embodiment, their descriptions are sometimes omitted.

[0556] In the following embodiment, an example in which the mask device is a mask device 15 having a mask support 40 and a mask 50 is described. Although not shown in the figure, the mask device may also be a standard mask device 15A having a mask support 40 and a standard mask 50A. That is, the technical concept of this embodiment can be applied to the standard mask device 15A, the manufacturing method of the standard mask device 15A, and the vapor deposition method using the standard mask device 15A.

[0557] Fig.72 1 is a longitudinal sectional view showing an example of the vapor deposition chamber 10. Fig.72 As shown, the substrate 110 can be held by an electrostatic chuck 9 utilizing electrostatic force. The electrostatic chuck 9 is disposed above the substrate 110. The evaporation chamber 10 can include a magnet 5 disposed above the electrostatic chuck 9. A cooling plate (not shown) for cooling the substrate 110 during evaporation can be provided between the electrostatic chuck 9 and the magnet 5. It should be noted that the evaporation chamber 10 may not include such a magnet 5. In this case, the electrostatic force of the electrostatic chuck 9 can be utilized to make the mask 50 and the substrate 110 fit tightly.

[0558] Fig.73 1 is a top view showing an example of a mask device 15. The mask device 15 may include a mask support 40 including a frame 41, and a mask 50 disposed on the frame 41. Two or more masks 50 arranged along the second direction D2 may be disposed on the frame 41. The mask 50 may be formed in an elongated shape with a first direction D1 orthogonal to the second direction D2 as a length direction. The mask 50 may have a plurality of through hole groups 56a (or a plurality of effective areas 53, both described below) arranged in a row in the first direction D1.

[0559] In order to suppress the deflection of the mask 50 , the frame 41 supports the mask 50 in a state of being pulled in the planar direction.

[0560] like Fig.74 As shown, the frame 41 may include a first frame surface 41a located on the mask 50 side, and a second frame surface 41b located on the opposite side of the first frame surface 41a. The second surface 552 (described later) of the mask 50 is bonded to the first frame surface 41a. It should be noted that Fig.74 It is schematically shown Fig.73 In the AA line cross-section of the drawing, the number of through hole groups 56a and the number of through holes 56 described later are reduced to make the drawing clear.

[0561] like Fig.73As shown, the frame 41 may be formed in the shape of a rectangular frame when viewed from above. For example, the frame 41 may include a pair of first sides 411 extending along the first direction D1, and a pair of second sides 412 extending along the second direction D2. In addition, the frame 41 may have an opening 43 extending from the first surface 41a of the frame to the second surface 41b of the frame. The opening 43 is located between the pair of first sides 411 and between the pair of second sides 412. The opening 43 overlaps with the through hole group 56a of the mask 50 when viewed from above, and the through hole group 56a is exposed on the side of the second surface 41b of the frame. Fig.73 In the example shown, the opening 43 is formed in a rectangular shape along the second direction D2 and the first direction D1 when viewed from above. Here, "viewed from above" is a term indicating observation in the thickness direction D3 of the mask 50, for example, Fig.73 The thickness direction D3 is a direction perpendicular to the second direction D2 and perpendicular to the first direction D1. When the mask 50 is spread in the horizontal direction, the thickness direction D3 is the up-down direction D3.

[0562] like Fig.73 and Fig.74 As shown, the frame 41 may have four frame wall surfaces 44a to 44d extending from the first frame surface 41a toward the second frame surface 41b, and a third frame surface 41c. The frame wall surfaces 44a and 44b are located on both sides and outside of the opening 43 in the first direction D1 when viewed from above. In other words, in the first direction D1, the opening 43 is located between the frame wall surface 44a and the frame wall surface 44b. In addition, the frame wall surfaces 44c and 44d are located on both sides and outside of the opening 43 in the second direction D2. In other words, in the second direction D2, the opening 43 is located between the frame wall surface 44c and the frame wall surface 44d. The four frame wall surfaces 44a to 44d are formed into a rectangular shape along the opening 43 when viewed from above. The first frame surface 41a is formed into a rectangular frame shape when viewed from above. Here, "outside" refers to the side opposite to the center side (inside) of the opening 43 when viewed from above. For example, the outside in the second direction D2 refers to Fig.73 The left or right side in the first direction D1 refers to the outer side Fig.73 The upper or lower side of the .

[0563] The frame wall surfaces 44a to 44d are connected to the frame first surface 41a, but are not connected to the frame second surface 41b. Fig.74 and Fig.75A As shown, when viewed in a cross section along the thickness direction D3, the frame wall surfaces 44a to 44d extend in a direction intersecting the frame first surface 41a. As a representative example, Fig.74 A pair of frame walls 44a, 44b are shown in FIG. Fig.75AFrame wall 44a is shown. Although an example is shown in which frame wall 44a, 44b is formed perpendicularly to frame first surface 41a, frame wall 44a, 44b may be inclined relative to frame first surface 41a so as to be gradually located outside as it moves toward frame second surface 41b. The same is true for frame wall 44c, 44d.

[0564] The frame wall surfaces 44a and 44b include a first wall edge 44e located on the edge of the frame first surface 41a. Before the cutting process described later, the first wall edge 44e overlaps with a corresponding overlapping portion 51 (described later) of the mask 50 when viewed from above. The overlapping portion 51 is also referred to as an end portion 51. Fig.76 As shown, the first wall edge 44e of the frame wall surface 44a, 44b extends in a straight line from the first extension line 50e of the first mask edge 50c (described later) of the mask 50 after the cutting process to the second extension line 50f of the second mask edge 50d along the second direction D2. Here, the term "the first wall edge 44e extends in a straight line" means that the first wall edge 44e forms a straight line when viewed from above, but is not limited to a strict meaning. For example, in the mask alignment process described later, the term is used as a concept including the following situation: the first wall edge 44e is formed into a non-linear shape within a range that can suppress the stress concentration generated in the mask 50 due to the reaction force received by the mask 50 from the frame 41.

[0565] As described above, a plurality of masks 50 are bonded to the frame 41. Fig.73 and Fig.76 As shown in FIG. 4 , the first wall edge 44e of the frame wall surface 44a, 44b can extend in a straight line from one mask 50 to the other mask 50 along the second direction D2. Fig.73 As shown, the first wall edge 44e of the frame wall surfaces 44a and 44b may extend linearly along the second direction D2 from the mask 50 located most on one side in the second direction D2 to the mask 50 located most on the opposite side of the mask 50 .

[0566] like Fig.74 As shown, the frame wall surfaces 44a, 44b include a second wall edge 44f located on the edge of the frame second surface 41b. The frame third surface 41c extends outward from the second wall edge 44f to the outer side surface 41f described later. The frame third surface 41c extends along the frame second surface 41b. Fig.74 and Fig.75A , an example in which the frame third surface 41c is formed parallel to the frame second surface 41b is shown. Although not shown, the frame third surface 41c may be inclined relative to the frame second surface 41b so as to gradually approach the frame second surface 41b as it moves toward the outside.

[0567] Similar to the frame walls 44a and 44b, the frame walls 44c and 44d may also include a first wall edge 44e and a second wall edge 44f. The frame third surface 41c may extend outward from the second wall edge 44f of the frame walls 44c and 44d. The frame third surface 41c may extend to the outer side surface 41f described later. That is, Fig.73 As shown, the frame third surface 41c can be formed in a rectangular frame shape in a plan view.

[0568] like Fig.75B As shown, in the cross section along the thickness direction D3, the frame wall surface 44a may include a curved portion 44h located on the side of the first frame surface 41a. The curved portion 44h may have a curved shape. The first wall edge 44e is located on the edge of the first frame surface 41a in the curved portion 44h. In other words, the first wall edge 44e is located at the position where the curved portion 44h intersects with the first frame surface 41a. The curved portion 44h may be formed in a shape constituting a part of an arc, for example. In this case, the curved portion 44h may have a radius of, for example, 0.3 mm or more in a cross section along the thickness direction D3 and perpendicular to the frame wall surface 44a. The upper limit of the radius of the curved portion 44h in this case may be less than the size of the frame wall surface 44a in the thickness direction D3. Other frame wall surfaces 44b to 44d may also include the curved portion 44h. It should be noted that the frame wall surface 44a may not include the curved portion 44h. In this case, the first wall surface edge 44e is located at a position where the frame wall surface 44a and the frame first surface 41a intersect.

[0569] like Fig.75A As shown, a frame groove 44k extending along the second direction D2 may be provided on the first surface 41a of the frame. The frame groove 44k may be located at a position that is closer to the inside of the first direction D1 than the frame walls 44a and 44b. The frame groove 44k may be configured in a manner such that a cutting means (e.g., a cutting tool 72) for cutting the mask 50 can be inserted. The frame groove 44k is located between the opening 43 and the frame walls 44a and 44b when viewed from above. The frame groove 44k may extend in a straight line along the second direction D2. The frame groove 44k may extend from the side closest to the second direction (e.g., Fig.73 The mask 50 (the leftmost side in FIG. 1 ) extends in a straight line along the second direction D2 to the opposite side of the mask 50 (for example Fig.73 Mask 50 (rightmost in FIG. ).

[0570] The cross-section of the frame groove 44k may be any shape as long as the cutting tool 72 can be inserted. Fig.75A In FIG. 1 , as an example, an example in which the cross section of the frame groove 44 k is formed in a rectangular shape is shown.

[0571] like Figure 73 to Figure 75AAs shown, the opening 43 is defined by four inner side surfaces 41e. The inner side surfaces 41e extend from the first frame surface 41a to the second frame surface 41b. The inner side surfaces 41e may be formed perpendicular to the first frame surface 41a and the second frame surface 41b.

[0572] like Figure 73 to Figure 75A As shown, the outer periphery of the frame 41 in a plan view is defined by four outer side surfaces 41f. The outer side surfaces 41f extend from the third frame surface 41c to the second frame surface 41b. The outer side surfaces 41f may be formed perpendicular to the third frame surface 41c and the second frame surface 41b.

[0573] like Fig.73 As shown in FIG. 1 , a frame alignment mark 48 may be provided on the first frame surface 41a of the frame 41. The frame alignment mark 48 is used for the alignment of the alignment mask 80 described later. Fig.73 As shown, four frame alignment marks 48 may be provided. The frame alignment marks 48 may be located near the corners of the opening 43. When irradiating light to align with the mask alignment marks 81, the frame alignment marks 48 may pass through the frame 41. However, as long as the alignment with the mask alignment marks 81 can be performed, the frame alignment marks 48 may not pass through the frame 41. The planar shape of the frame alignment marks 48 is arbitrary. Fig.73 In the example, a circular shape is used.

[0574] Next, refer to Fig.73 , Fig.74 , Fig.76 and Fig.77 The mask 50 of one embodiment of the present disclosure is described. The mask 50 can be manufactured by any manufacturing method. For example, it can be manufactured by etching a rolled material, or it can also be manufactured by plating. In the case of manufacturing by plating, the mask 50 can be composed of two or more layers. In this case, the through hole 56 described later is formed in a manner that penetrates these layers.

[0575] like Fig.73 and Fig.76 As shown, the mask 50 may have a first mask edge 50c and a second mask edge 50d located on both sides in the second direction D2 (the width direction of the mask 50) when viewed from above. The first mask edge 50c is located on one ( Fig.73 The second mask edge 50d is located at the other (left side) side edge in the second direction D2, and extends from the first mask end 50g to the second mask end 50h described later. Fig.73 The mask edges 20c and 20d extend along the first direction D1. Fig.76, a first extended line 50e obtained by extending the first mask edge 50c is shown, and a second extended line 50f obtained by extending the second mask edge 50d is shown. Each extended line 20e, 20f is a line extending from the mask ends 50g, 50h described later toward the outside of the first direction D1, and may also be a line extending in a straight line from the corresponding mask edges 20c, 20d.

[0576] The mask 50 may include a first mask end 50g and a second mask end 50h located on both sides of the first direction D1 orthogonal to the second direction D2. The first mask end 50g is located at one ( Fig.73 The second mask end 50h is located at the other (upper side) end in the first direction D1, extending from the first mask edge 50c to the second mask edge 50d. Fig.73 The first mask edge 50c is located at the lower side of the frame 41, and extends from the first mask edge 50c to the second mask edge 50d. Each mask end 50g, 50h extends along the second direction D2. Each mask end 50g, 50h is located at a position that is closer to the inside of the first direction D1 than the first wall edge 44e of the corresponding frame wall surface 44a, 44b of the frame 41 when viewed from above. More specifically, the first mask end 50g is located at a position that is closer to the inside of the first direction D1 than the first wall edge 44e of the frame wall surface 44a ( Fig.73 The second mask end 50h is located on the inner side (in the lower side) of the first wall edge 44e of the frame wall surface 44b in the first direction D1. Fig.73 Each mask end 50g, 50h is formed by cutting the mask 50 using a dicing blade 72 described later, and is located at a position overlapping with the corresponding frame groove 44k in a plan view.

[0577] like Fig.74 and Fig.76 As shown, the mask 50 may have a pair of end portions 51 located on both sides in the first direction D1 and overlapping with the first surface 41a of the frame. The end portions 51 are portions located between the first mask edge 50c and the second mask edge 50d and located at a position further outward than the through hole group 56a described later in the first direction D1 when viewed from above. A portion of the end portions 51 is cut off and removed in the cutting process described later. More specifically, the end portions 51 include: a mask welding portion 51a welded to the frame 41 to form a welding portion 46 (described later); and a removal portion 59 located further outward than the mask welding portion 51a in the first direction D1 when viewed from above and cut off and removed in the cutting process. The removal portion 59 is composed of a pressing portion 59a that is pressed against the frame 41 together with the mask welding portion 51a in the mask alignment process described later, and a holding portion 59b that is held by the mask clamp 70 described later. Fig.76 In FIG. 5 , the removed portion 59 is indicated by a two-dot chain line.

[0578] like Fig.74 As shown in FIG. 5 , the mask 50 may have more than two through holes 56. The mask 50 may also have a through hole group 56a consisting of more than two through holes 56. Fig.73 As shown, each mask 50 has two or more through hole groups 56a arranged in the first direction D1. The through hole group 56a is located between the first mask edge 50c and the second mask edge 50d in the second direction D2 and between the pair of ends 51 in the first direction D1.

[0579] like Fig.74 As shown in FIG. 5 , the through hole 56 extends from the first surface 551 to the second surface 552 and penetrates the mask 50. Fig.74 In order to simplify the drawings, an example is shown in which the wall surface of the through hole 56 is linearly inclined relative to the central axis CL in a manner away from the central axis CL from the first surface 551 toward the second surface 552. In this way, the wall surface of the through hole 56 can be formed so that the opening size in the first surface 551 is smaller than the opening size in the second surface 552.

[0580] like Fig.77 As shown, the through hole 56 may also be the through hole group 56a. The through hole group 56a and the opening 43 of the frame 41 (see Fig.73 and Fig.74 ) and exposed from the opening 43. All through hole groups 56a may overlap with the opening 43. Fig.77 As shown, the through hole group 56a can be composed of more than two through holes 56 in a group. The through hole group 56a is used as a term to represent a collection of multiple through holes 56 arranged in a regular pattern. The through holes 56 constituting the outer edge of a through hole group 56a are the through holes 56 located on the outermost side among the multiple through holes 56 arranged in the same regular pattern. On the outer side of the through holes 56 at the outer edge, there may not be through holes 56 arranged in the same regular pattern and intended for the vapor deposition material 7 to pass through. However, on the outer side of the through holes 56 at the outer edge, through holes or recesses for other purposes may be formed (both not shown). These through holes or recesses for other purposes may be formed so as not to have the regularity of arrangement of the through holes 56, and they may be considered not to belong to the through hole group 56a.

[0581] like Fig.73 As shown, a plurality of through hole groups 56a can be arranged at predetermined intervals (at predetermined pitches). The through hole groups 56a can be arranged at predetermined intervals in the first direction D1. It should be noted that, although not shown, the through hole groups 56a can also be arranged separately or in parallel in the second direction D2 and the first direction D1. That is, each through hole group 56a constituting a column along the second direction D2 and each through hole group 56a constituting another column adjacent to the column in the first direction D1 can be aligned in the first direction D1.

[0582] like Fig.77 As shown, in one through hole group 56a, a plurality of through holes 56 may be arranged at predetermined intervals (at predetermined pitches). The through holes 56 may be arranged at predetermined intervals (at predetermined pitches) in the second direction D2. Fig.77 The symbols C2 shown in the figure are arranged and spaced apart at predetermined intervals ( Fig.77 The arrangement pitches C1 and C2 of the through holes 56 in the second direction D2 and the first direction D1 may be different or equal. Fig.77 , an example is shown in which the arrangement pitch C2 in the second direction D2 is equal to the arrangement pitch C1 in the first direction D1. Fig.77 As shown, the through holes 56 can be arranged in parallel. More specifically, each through hole 56 constituting a column along the second direction D2 and each through hole 56 constituting another column adjacent to the column in the first direction D1 can be aligned in the first direction D1. The arrangement pitches C1 and C2 of the through holes 56 can be set according to the pixel density of the display device or the projection device, for example, as follows.

[0583] Pixel density is 600ppi or higher: Pitch is 42.3μm or less

[0584] Pixel density is 1200ppi or higher: Pitch is 21.2μm or less

[0585] · Pixel density is 3000ppi or higher: Pitch is 8.5μm or less

[0586] Pixel density of 5000ppi or more: Pitch of 5.1μm or less

[0587] A display device or projection device with a pixel density of 600ppi can be used to display images or images at a distance of about 15cm from the eyeball, for example, it can be used as an organic device for a smartphone. A display device or projection device with a pixel density of 1200ppi can be used to display images or images at a distance of about 8cm from the eyeball, for example, it can be used to display or project images or images for expressing virtual reality (so-called VR). A display device or projection device with a pixel density of 3000ppi can be used to display images or images at a distance of about 3cm from the eyeball, for example, it can be used to display or project images or images for expressing augmented reality (so-called AR). A display device or projection device with a pixel density of 5000ppi can be used to display images or images at a distance of about 2cm from the eyeball, for example, it can be used to display or project images or images for expressing augmented reality.

[0588] It should be noted that the through holes 56 in a through hole group 56a may not be arranged in parallel, but may be arranged in a staggered manner (not shown). That is, the through holes 56 constituting a column along the second direction D2 and the through holes 56 constituting other columns adjacent to the column in the first direction D1 may not be aligned in the first direction D1. The through holes 56 constituting a column and the through holes 56 constituting other adjacent columns may be staggered in the second direction D2. The amount of the staggered arrangement may be half of the arrangement pitch C2 in the second direction D2, but the amount of the staggered arrangement is arbitrary.

[0589] like Fig.77 As shown, the through hole 56 may have a roughly rectangular outline when viewed from above. In this case, the four corners of the outline of the through hole 56 may be curved. It should be noted that the shape of the outline may be arbitrarily determined according to the shape of the pixel. For example, it may have a hexagonal, octagonal or other polygonal shape, or it may have a circular shape. In addition, the shape of the outline may be a combination of multiple shapes. In addition, the through holes 56 may have different outline shapes. In the case where the through hole 56 has a polygonal outline, such as Fig.77 As shown, the opening size of the through hole 56 can be set to the distance between a pair of opposing sides of the polygon.

[0590] exist Fig.74 and Fig.77 In the figure, the opening size of the through hole 56 in the first surface 551 of the mask 50 is represented by the symbol Q1. In addition, the opening size of the through hole 56 in the second surface 552 of the mask 50 is represented by the symbol Q2. In addition, the symbol Q3 represents the distance between mutually adjacent through holes 56 in the first surface 551. Fig.77 In the figure, the through hole 56 has a square planar shape, so the opening size of the through hole 56 in the second direction D2 is equal to the opening size of the through hole 56 in the first direction D1. Representatively, the size of the through hole 56 in the first direction D1 is represented by symbols Q1 and Q2.

[0591] The size Q1, the size Q2, and the size Q3 are determined according to the pixel density of the display device or the projection device, for example, as shown in Table 1 below.

[0592] [Table 1]

[0593]

[0594]

[0595] The through hole group 56a is sometimes referred to as an effective region 53. The region surrounding the effective region 53 is sometimes referred to as a peripheral region 54. In the present embodiment, the peripheral region 54 surrounds one effective region 53.

[0596] The contour of the effective area 53 can be defined by a line tangent to the outermost through hole 56 in the corresponding through hole group 56a. More specifically, the contour of the effective area 53 can be defined by a line tangent to the opening of the through hole 56. Fig.77 In the example shown, the through holes 56 are arranged in parallel, so the outline of the effective area 53 forms an approximately rectangular outline. It should be noted that, although not shown in the figure, each effective area 53 can have an outline of various shapes according to the shape of the display area of ​​the organic device. For example, each effective area 53 can have a circular outline.

[0597] like Fig.74As shown, the mask 50 may have a thickness T from the first surface 551 to the second surface 552. The thickness T may be, for example, 2 μm or more, 5 μm or more, 10 μm or more, or 15 μm or more. By making the thickness T 2 μm or more, the mechanical strength of the mask 50 can be ensured. In addition, the thickness T may be, for example, 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. By making the thickness T 50 μm or less, the generation of shadows can be suppressed. The range of the thickness T may be defined by the first group consisting of 2 μm, 5 μm, 10 μm, and 15 μm and / or the second group consisting of 20 μm, 30 μm, 40 μm, and 50 μm. The range of the thickness T may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T may be defined by a combination of any two of the values ​​included in the first group. The range of thickness T can be defined by a combination of any two of the values ​​included in the second group. For example, it can be 2 μm to 50 μm, 2 μm to 40 μm, 2 μm to 30 μm, 2 μm to 20 μm, 2 μm to 15 μm, 2 μm to 10 μm, 2 μm to 5 μm, 5 μm to 50 μm, 5 μm to 40 μm, 5 μm to 30 μm, 5 μm to 20 μm, 5 μm to 15 μm, 5 μm to 10 μm, 10 μm to 50 μm, 10 μm to 50 μm, 10 μm to 150 μm It can be above 40μm and below 10μm, above 30μm and below 10μm, above 20μm and below 10μm, above 15μm and below 15μm, above 40μm and below 15μm, above 30μm and below 15μm, above 20μm and below 20μm, above 50μm and below 20μm and below 40μm, above 30μm and below 30μm, above 50μm and below 30μm, above 40μm and below 40μm, or above 50μm and below 40μm.

[0598] like Fig.74 and Fig.75A As shown, each mask 50 is joined and fixed to the frame 41. For example, the mask 50 can be joined to the frame 41 by welding. For example, the mask 50 can be joined to the frame 41 by a welding portion 46 formed by spot welding. Fig.76 As shown, the welding portion 46 may be formed at a position between the opening 43 and the frame groove 44k. Fig.73As shown, one mask 50 can be joined to the frame 41 by a plurality of dot-shaped welding portions 46. In this case, the plurality of welding portions 46 can be arranged along the second direction D2. Alternatively, although not shown, the welding portions 46 can be formed so as to extend continuously in the second direction D2.

[0599] like Fig.73 As shown, two alignment masks 80 may be provided on the frame 41. One alignment mask 80 is located on the frame wall 44d side relative to the mask 50 located closest to the frame wall 44d side. The other alignment mask 80 is located on the frame wall 44c side relative to the mask 50 located closest to the frame wall 44c side. Fig.73 In the embodiment, one alignment mask 80 is provided on the left side of the leftmost mask 50, and another alignment mask 80 is provided on the right side of the rightmost mask 50. The alignment mask 80 is bonded to the first frame surface 41a of the frame 41. The alignment mask 80 can be mounted and fixed on the frame 41.

[0600] Each alignment mask 80 includes two mask alignment marks 81. Each mask alignment mark 81 is located at a position overlapping with the corresponding frame alignment mark 48 when viewed from above. When irradiating light to align with the frame alignment mark 48, the mask alignment mark 81 may pass through the alignment mask 80. However, as long as alignment with the frame alignment mark 48 can be performed, the mask alignment mark 81 may not pass through the alignment mask 80. The planar shape of the mask alignment mark 81 is arbitrary. Fig.73 The diameter of the mask alignment mark 81 may be smaller than the diameter of the frame alignment mark 48 .

[0601] Next, refer to Figures 78 to 89 The method for manufacturing the mask device 15 of the present embodiment including such a configuration will be described. The method for manufacturing the mask device 15 of the present embodiment may include a frame preparation step, a mask preparation step, a holding step, a placement step, a mask alignment step, a bonding step, a disassembly step, and a cutting step.

[0602] First, as a frame preparation step, the frame 41 is prepared. The frame 41 can be manufactured by any manufacturing method. For example, Figure 73 to Figure 75B The frame 41 shown can be manufactured by machining a plate, a forged material, etc. The frame 41 can be mounted on a tensioning device (not shown). The tensioning device is a device that fixes the mask 50 to the frame 41 while applying tension to the mask 50. Then, the alignment mask 80 (see Fig.73 At this time, the mask alignment mark 81 of the alignment mask 80 is aligned with the frame alignment mark 48 of the frame 41.

[0603] In addition, as a mask preparation step, the above-mentioned mask 50 is prepared. As described above, the mask 50 can be manufactured by any manufacturing method such as etching treatment of a rolled material, plating treatment, etc.

[0604] Next, as a holding step, the mask 50 is held by a mechanical mask jig 70. In this case, Fig.78 As shown, the mask jig 70 can be used to hold the holding portions 59b of the removal portions 59 located at both ends of the mask 50 in the first direction D1 (see Fig.81 ). One holding portion 59b can be held at different positions in the second direction D2 by two mask clamps 70. A driving portion 70D can be connected to each mask clamp 70. The driving portion 70D can be configured in a manner that can pull each mask clamp 70 separately. The driving portion 70D can apply a first tension Ta in the first direction D1 to the mask 50 by pulling each mask clamp 70 along the first direction D1. The first tension Ta is a tension applied to the mask 50 during the holding process. The first tension Ta can be a relatively small value that can suppress the degree of significant bending of the mask 50. Here, the tension applied to the mask 50 refers to the tension applied to the mask 50 by the mask clamp 70, and can be the tension applied to the mask 50 as a result of each mask clamp 70 pulling the mask 50. The tension applied to the mask 50 can be confirmed by a display portion (not shown) of the driving portion 70D or the like. When the mask 50 is pressed against the frame 41 , the tension in the effective region 53 of the mask 50 is smaller than the tension applied to the mask 50 by the mask jig 70 .

[0605] Next, as a configuration step, Fig.79 As shown in FIG. 4 , the mask 50 is arranged on the frame 41. More specifically, first, the mask 50 is arranged above the frame 41, and then the mask 50 is lowered to contact the frame 41. In this case, as shown in FIG. Fig.81 As shown, the end 51 of the mask 50 overlaps with the first wall edge 44e of the frame wall surfaces 44a, 44b when viewed from above, and overlaps with the first frame surface 41a. In addition, the first wall edge 44e is arranged in a manner extending from the first mask edge 50c of the mask 50 to the second mask edge 50d in a straight line along the second direction D2. The mask 50 is arranged in a manner such that the direction perpendicular to the first wall edge 44e and the frame groove 44k is the length direction. In the arrangement step, the mask 50 can continue to be in a state where the first tension Ta is given after the holding step.

[0606] Next, as a mask alignment process, Fig.80A and Fig.80BAs shown, the mask 50 is aligned with respect to the frame 41. In the mask alignment process, the mask 50 is pulled in the first direction D1 by the second tension Tb, and the mask 50 is pressed against the frame 41. The second tension Tb is a tension applied to the mask 50 in the mask alignment process. The second tension Tb may be a value greater than the first tension Ta described above.

[0607] The mask alignment process may include: a tension increasing process, a first through hole confirmation process, a moving process, a second through hole confirmation process, a tension adjusting process, and a third through hole confirmation process. The first through hole confirmation process is an example of the first confirmation process. The second through hole confirmation process is an example of the second confirmation process and also an example of the third confirmation process. The third through hole confirmation process is an example of the fourth confirmation process.

[0608] In the tension increasing step, the tension applied to the mask 50 is increased. More specifically, the driving unit 70D (see Fig.78 ) increases the pulling force of each mask clamp 70. Thus, the tension applied to the mask 50 increases from the first tension Ta to the second tension Tb.

[0609] In the first through hole confirmation process, if Fig.80A As shown, the position of the through hole 56 relative to the frame 41 can be confirmed. More specifically, it can be confirmed whether the position of the through hole 56 is within the allowable range relative to the desired position. For example, the coordinates of the through hole 56 relative to an arbitrarily set origin can be measured, and the measured coordinates can be compared with the target coordinates of the through hole 56. For example, four mask alignment marks 81 (see Fig.73 ) as the origin to measure the coordinates of the through hole 56. For example, the intersection of two straight lines passing through the centers of two mask alignment marks 81 located on the diagonal line can also be used as the origin. The center of the mask alignment mark 81 can be measured by photographing from the bottom of the alignment mask 80 with the camera 71 and performing image analysis. The coordinates of the through hole 56 can be the center point of the through hole 56 when viewed from above. The coordinates of the through hole 56 can be measured by photographing from the bottom of the mask 50 with the camera 71 and performing image analysis. The coordinates can be measured for multiple through holes 56 to confirm the positions of multiple through holes 56. Based on the confirmation results of the positions of these through holes 56, the position offset and the direction of the position offset can be calculated. In the first through hole confirmation step, the above-mentioned second tension Tb can be applied to the mask 50, and the mask 50 can be pressed against the frame 41.

[0610] When the result of the position confirmation of the through hole 56 in the first through hole confirmation process is that the through hole 56 is positioned within the allowable range relative to the desired position, the mask alignment process can be terminated and the process can be transferred to the bonding process. In this case, the moving process described later may not be necessary. When the through hole 56 is positioned within the allowable range, the second tension Tb applied to the mask 50 in the first through hole confirmation process is equal to the bonding tension Td described later. On the other hand, when the position of the through hole 56 is not positioned within the allowable range relative to the desired position, the moving process is performed.

[0611] In the mobile process, Fig.80B As shown in FIG. 1 , the mask 50 is moved in any direction within a two-dimensional plane defined by the second direction D2 and the first direction D1. Fig.81 The mask 50 may be moved in the second direction D2 or in the first direction D1. Alternatively, the mask 50 may be rotated when viewed from above. Here, the mask 50 may be moved relative to the frame 41 by moving each mask clamp 70. In the moving process, the mask 50 may be moved based on the position confirmation result of the through hole 56 in the above-mentioned first through hole confirmation process. The movement amount of the mask 50 may be a value corresponding to the position offset amount obtained in the first through hole confirmation process. The movement direction of the mask 50 may be a direction corresponding to the position offset direction obtained in the first through hole confirmation process. In the moving process, the mask 50 is pressed against the frame 41 while being moved relative to the frame 41 without being raised. Thus, it is not necessary to rise and fall in order to move the mask 50, and the time required for the mask alignment process can be shortened. In the moving process, the mask 50 may be given the above-mentioned second tension Tb.

[0612] In the second through-hole checking step, the position of the through-hole 56 relative to the frame 41 is checked. The second through-hole checking step can be performed in the same manner as the first through-hole checking step.

[0613] When the result of the position confirmation of the through hole 56 in the second through hole confirmation process is that the through hole 56 is positioned within the allowable range relative to the desired position, the mask alignment process is terminated and the process is transferred to the bonding process. In this case, the tens...

Claims

1. A standard mask device for evaluating a vapor deposition chamber of an organic device manufacturing device, wherein: The master mask device includes a master mask including a through hole. The standard mask device includes a standard area including the through hole and arranged along a first direction and a second direction intersecting the first direction. The ratio of the size of the standard area in the first direction to the size of the interval between the two standard areas in the first direction is greater than or equal to 0.

1. A ratio of a size of the standard region in the second direction to a size of an interval between two of the standard regions in the second direction is equal to or greater than 0.

1.

2. The standard mask device according to claim 1, wherein: The standard area is located in the device space, The device space is a space overlapping with the organic device manufactured in the evaporation chamber.

3. The standard mask device according to claim 1 or 2, wherein: The standard mask device includes: a frame including a pair of first sides extending along the first direction, a pair of second sides extending along the second direction, and an opening; and two or more standard masks fixed to the pair of second sides and arranged along the second direction.

4. The standard mask device as claimed in claim 3, wherein: The standard area is located in the central area, The central region is a central region when the standard mask is divided into three equal parts in the second direction.

5. The standard mask device as claimed in claim 4, wherein: The standard region includes a non-penetrating region that is located around the through holes in the central region and has a size larger than an arrangement period of the through holes in a plan view.

6. The standard mask device according to claim 3, wherein: The standard mask device includes a horizontal bar located at the opening and connected to the frame, The frame includes: a first frame surface, the standard mask is fixed to the first frame surface; a second frame surface, located on the opposite side of the first frame surface; an inner side surface, located between the first frame surface and the second frame surface and connected to the horizontal bar; and an outer side surface, located on the opposite side of the inner side surface. The horizontal bar includes: a first horizontal bar surface, located on the first side of the frame; a second horizontal bar surface, located on the opposite side of the first horizontal bar surface; and a horizontal bar side surface, located between the first horizontal bar surface and the second horizontal bar surface. The first surface of the frame is continuous with the first surface of the horizontal bar.

7. The standard mask device according to claim 6, wherein: The first surface of the frame and the first surface of the horizontal bar are located on the same plane.

8. The standard mask device according to claim 6, wherein: In a plan view, the inner side surface and the horizontal stripe side surface are connected via a first connecting portion having a first curvature radius.

9. The standard mask device according to claim 6, wherein: The inner side surface and the second surface of the horizontal bar are connected via a second connecting portion having a second curvature radius.

10. The standard mask device according to claim 6, wherein: The horizontal bars include a first horizontal bar connected to the first side.

11. The standard mask device according to claim 6, wherein: The horizontal bars include a second horizontal bar connected to the second side.

12. The standard mask device according to claim 6, wherein: The horizontal bars include a first horizontal bar connected to the first side and a second horizontal bar connected to the second side. In a plan view, the horizontal bar side surface of the first horizontal bar and the horizontal bar side surface of the second horizontal bar are connected via a third connecting portion having a third curvature radius.

13. The standard mask device according to claim 6, wherein: The thickness of the horizontal bar is smaller than the thickness of the frame.

14. The standard mask device according to claim 13, wherein: A ratio of the thickness of the horizontal stripe to the thickness of the frame is 0.85 or less.

Images