Evaporation rate monitoring device, evaporation system and evaporation method

Abstract

The invention provides an evaporation rate monitoring device, an evaporation system and an evaporation method, and relates to the technical field of evaporation, the evaporation rate monitoring device comprises a crystal oscillation sheet tray and a first baffle, the first surface of the crystal oscillation sheet tray is used for fixing N crystal oscillation sheets, N is larger than 2, the first baffle covers the first surface of the crystal oscillation sheet tray, and the first baffle covers the first surface of the crystal oscillation sheet tray; the first baffle comprises a first open hole and a second open hole, the first open hole is used for exposing one crystal oscillator in the N crystal oscillators, and the second open hole is used for exposing the other crystal oscillator in the N crystal oscillators; and at least part of the first rotating disc covers at least part of the first baffle, the first rotating disc comprises a first opening, and the first opening is used for exposing the second opening. Based on the evaporation rate monitoring device, evaporation rate monitoring based on one crystal oscillation sheet can be achieved with low difficulty and low cost, meanwhile, pre-evaporation is synchronously carried out on the other crystal oscillation sheet, and the evaporation efficiency of evaporation equipment can be improved.

Description

Technical Field

[0001] The present application relates to the field of evaporation technology, and more specifically, to an evaporation rate monitoring device, an evaporation system and an evaporation method. Background Art

[0002] The production of organic light emitting diode (OLED) devices mainly uses evaporation equipment to heat the evaporation material in a high vacuum environment, so that the evaporation material is vaporized at a high temperature and deposited on the surface of the substrate to be evaporated of the OLED device.

[0003] In order to ensure the accuracy of film deposition on the substrate surface, the material evaporation process needs to be monitored in real time. Therefore, it is proposed to introduce the crystal oscillator in the system into the material evaporation environment through a crystal oscillator system, so that a layer of material is gradually evaporated on the surface of the crystal oscillator. The evaporation rate can be monitored by utilizing the piezoelectric effect and electrostrictive effect of the crystal oscillator.

[0004] However, in order to realize the function of monitoring the evaporation rate, the evaporation efficiency of the evaporation equipment will be directly affected, resulting in a decrease in the evaporation efficiency. Summary of the invention

[0005] The present application provides a evaporation rate monitoring device, an evaporation system and an evaporation method, which make relatively simple structural improvements to the existing components in the crystal oscillator system, and realize evaporation rate monitoring based on one crystal oscillator chip while pre-evaporating another crystal oscillator chip at a relatively low difficulty and cost. After the evaporation rate monitoring crystal oscillator chip is replaced by a crystal oscillator chip that has completed pre-evaporation, the crystal oscillator chip that has completed pre-evaporation can directly participate in the evaporation rate monitoring, which helps to increase the evaporation efficiency of the evaporation equipment.

[0006] In a first aspect, a evaporation rate monitoring device is provided, which includes a crystal oscillator tray and a first baffle, wherein the first surface of the crystal oscillator tray is used to fix N crystal oscillators, where N is greater than 2, and the first baffle covers the first surface of the crystal oscillator tray, and the first baffle includes a first opening and a second opening, wherein the first opening is used to expose one of the N crystal oscillators, and the second opening is used to expose another of the N crystal oscillators, and the evaporation rate monitoring device also includes: a first turntable, at least a portion of the first turntable covers at least a portion of the first baffle, and the first turntable includes a first opening, and the first opening is used to expose the second opening.

[0007] In combination with the first aspect, in some implementations of the first aspect, at least a portion of the first baffle is the first opening and the second opening, or at least a portion of the first baffle is the second opening.

[0008] In combination with the first aspect, in certain implementations of the first aspect, when at least a portion of the first baffle is a second opening, the evaporation rate monitoring device also includes: a second turntable, at least a portion of the second turntable covers the first opening, the second turntable includes a second opening, the second opening is used to expose the first opening, and an opening angle of the first opening is smaller than an opening angle of the second opening.

[0009] In combination with the first aspect, in certain implementations of the first aspect, the crystal oscillator is used to evaporate a material film, and the evaporation rate monitoring device also includes: a film thickness detector, the film thickness detector is configured to: detect the first surface film thickness of the crystal oscillator located at the first opening, or detect the second surface film thickness of the crystal oscillator located at the second opening; a wafer changer, the wafer changer is connected to the crystal oscillator tray, the wafer changer is configured to: when the increase in the first surface film thickness reaches a first film thickness threshold, or the first surface film thickness reaches a maximum film thickness, or the second surface film thickness reaches a second film thickness threshold, switch the crystal oscillator located at the second opening to the position of the first opening, and switch the crystal oscillator located under the first baffle to the position of the second opening, the first film thickness threshold is greater than or equal to the second film thickness threshold, and the first film thickness threshold is less than or equal to the maximum film thickness, and when the first surface film thickness reaches the maximum film thickness, the crystal oscillator cannot be used to detect the evaporation rate.

[0010] In combination with the first aspect, in certain implementations of the first aspect, when the first film thickness threshold is equal to the second film thickness threshold, the first film thickness threshold is less than or equal to 50% of the maximum film thickness of the crystal oscillator; or, when the first film thickness threshold is greater than the second film thickness threshold, the first film thickness threshold is equal to the maximum film thickness.

[0011] In combination with the first aspect, in some implementations of the first aspect, an opening angle of the first opening is in the range of [10°, 50°].

[0012] In combination with the first aspect, in some implementations of the first aspect, the rotation speed of the first turntable is in the range of [80 r / s, 150 r / s].

[0013] In a second aspect, a evaporation system is provided, comprising an evaporation source and an evaporation rate monitoring device in any possible implementation of the design of the evaporation rate monitoring device of the first aspect described above, and the first opening and the second opening of the evaporation rate monitoring device are arranged relative to the evaporation source.

[0014] In combination with the second aspect, in some implementations of the second aspect, the evaporation system further includes an evaporation controller; the film thickness detector of the evaporation rate detection device is used to determine the real-time evaporation rate of the evaporation source according to the change in the film thickness on the surface of the crystal oscillator located at the first opening within a unit time, and send the real-time evaporation rate to the evaporation controller;

[0015] The evaporation controller is used to determine a power control signal according to the real-time evaporation rate and send the power control signal to the power supply. The power control signal is used to adjust the power of the power supply to provide electrical energy to the evaporation source to control the evaporation rate of the evaporation source.

[0016] In a third aspect, a evaporation method is provided, which is applied to a evaporation rate monitoring device in any possible implementation of the design of the evaporation rate monitoring device in the first aspect above, the method comprising: upon receiving first detection data from a film thickness detector, controlling a wafer changer to switch a crystal oscillator located at a second opening to a position of the first opening, and switching a crystal oscillator located under a first baffle to a position of the second opening, the first detection data being used to indicate that an increase in a first surface film thickness of the crystal oscillator currently located at the first opening reaches a first film thickness threshold; or, upon receiving second detection data from the film thickness detector, controlling a wafer changer to switch a crystal oscillator located at a second opening to a position of the first opening, and switching a crystal oscillator located under a first baffle to a position of the second opening. The film changer switches the crystal oscillator located at the second opening to the position of the first opening, and switches the crystal oscillator located under the first baffle to the position of the second opening, and the second detection data is used to indicate that the first surface film thickness of the crystal oscillator currently located at the first opening reaches the maximum film thickness; or, when receiving the second detection data from the film thickness detector, the film changer is controlled to switch the crystal oscillator located at the second opening to the position of the first opening, and switch the crystal oscillator located under the first baffle to the position of the second opening, and the second detection data is used to indicate that the increase in the second surface film thickness of the crystal oscillator currently located at the second opening reaches the second film thickness threshold.

[0017] In a fourth aspect, a control device is provided, comprising a processor and a memory, wherein the processor and the memory are connected, wherein the memory is used to store program code, and the processor is used to call the program code to execute a method in any possible implementation mode of the method design of the third aspect above.

[0018] In a fifth aspect, a control device is provided, comprising a module or unit for executing a method in any possible implementation of the method design of the third aspect above.

[0019] In a sixth aspect, a computer-readable storage medium is provided, storing a computer program, wherein the computer program is executed by a processor to implement a method in any possible implementation manner in the method design of the third aspect.

[0020] In a seventh aspect, a computer program product is provided, comprising instructions, which, when executed by a processor, enable a computer to execute a method in any possible implementation of the method design of the third aspect above. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a schematic diagram of the architecture of an evaporation system 100 applicable to an embodiment of the present application;

[0022] Figure 2 is a schematic structural diagram of a evaporation rate monitoring device 200 proposed in an embodiment of the present application;

[0023] Figure 3 is a structural schematic diagram of another evaporation rate monitoring device 200 proposed in an embodiment of the present application;

[0024] Figure 4 is a structural schematic diagram of another evaporation rate monitoring device 200 proposed in an embodiment of the present application;

[0025] Figure 5 is a structural schematic diagram of another evaporation rate monitoring device 200 proposed in an embodiment of the present application;

[0026] Figure 6 is a structural schematic diagram of another evaporation rate monitoring device 200 proposed in an embodiment of the present application;

[0027] Figure 7 is a structural schematic diagram of another evaporation rate monitoring device 200 proposed in an embodiment of the present application;

[0028] Figure 8 is a schematic diagram of the architecture of an evaporation system 800 proposed in an embodiment of the present application;

[0029] Fig. 9 It is a schematic flow chart of an evaporation method 900 proposed in an embodiment of the present application. DETAILED DESCRIPTION

[0030] The technical solution in this application will be described below in conjunction with the accompanying drawings.

[0031] The embodiments of the present application will present various aspects, embodiments or features around a system including multiple devices, components, modules, etc. It should be understood and appreciated that each system may include additional devices, components, modules, etc., and / or may not include all devices, components, modules, etc. discussed in conjunction with the figures. In addition, combinations of these schemes may also be used.

[0032] In addition, in the embodiments of the present application, words such as "exemplary" and "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design described as "exemplary" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of the word "exemplary" is intended to present concepts in a concrete way.

[0033] The business scenarios described in the embodiments of the present application are intended to more clearly illustrate the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided in the embodiments of the present application. Ordinary technicians in this field can know that with the evolution of technology and the emergence of new business scenarios, the technical solutions provided in the embodiments of the present application are also applicable to similar technical problems.

[0034] References to "one embodiment" or "some embodiments" etc. described in this specification mean that a particular feature, structure or characteristic described in conjunction with the embodiment is included in one or more embodiments of the present application. Thus, the phrases "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. that appear at different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in other ways.

[0035] In the embodiments of the present application, "at least one" refers to one or more, and "plurality" refers to two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can be represented by: including the existence of A alone, the existence of A and B at the same time, and the existence of B alone, where A and B can be singular or plural. The character " / " generally indicates that the previous and subsequent associated objects are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can be represented by: a, b, c, ab, ac, bc, or abc, where a, b, c can be single or multiple.

[0036] In the description of the embodiments of the present application, the directions or positional relationships indicated by terms such as "up", "down", "left", "right", "inside", "outside", "vertical" and "horizontal" are defined relative to the directions or positions of the components schematically placed in the drawings. It should be understood that these directional terms are relative concepts. They are used for relative description and clarification, rather than indicating or implying that the device or component referred to must have a specific direction, or be constructed and operated in a specific direction. They may change accordingly according to changes in the directions of the components placed in the drawings, and therefore cannot be understood as limitations on the present application.

[0037] In the embodiments of the present application, the same reference numerals are used to represent the same components or parts. For the same parts in the embodiments of the present application, only one of the parts or parts may be marked with a reference numeral in the figure. It should be understood that the reference numerals are also applicable to other identical parts or parts. In addition, the various parts in the drawings are not drawn to scale, and the sizes and dimensions of the parts shown in the drawings are only exemplary and should not be understood as limiting the present application.

[0038] At present, vacuum evaporation technology is commonly used in the manufacturing process of OLED devices. During the evaporation period, it is necessary to rely on a crystal oscillator system (including an evaporation rate monitoring device) to monitor the evaporation rate of the evaporation source in the evaporation chamber in real time, and dynamically adjust the evaporation rate based on the monitoring results, so as to accurately control the thickness of the organic light-emitting material film formed on the surface of the OLED device.

[0039] The monitoring core of the crystal oscillator system lies in the multiple crystal oscillators contained in the system. When the material layer is gradually evaporated on the crystal oscillator, the vibration frequency of the crystal oscillator will change due to the change in mass, thereby indirectly reflecting the evaporation rate. That is, the evaporation rate is monitored by utilizing the piezoelectric effect and electrostrictive effect of the crystal oscillator.

[0040] However, when evaporating some special materials (such as magnesium, ytterbium and other metal materials), due to the poor adhesion of the material on the crystal oscillator, after switching to a new crystal oscillator, a layer of material will not be quickly deposited on the surface of the crystal oscillator. This material layer is crucial for monitoring the evaporation rate, so it is necessary to wait for the new crystal oscillator surface to be coated with a layer of material before subsequent monitoring of the evaporation rate of the evaporation equipment can be performed. The above-mentioned operation of pre-evaporating a layer of material on the surface of the new crystal oscillator can be called pre-evaporation.

[0041] In order to ensure the continuity of evaporation monitoring, each crystal oscillator can be pre-evaporated before the formal continuous evaporation. However, this process takes dozens of minutes for each crystal oscillator. This operation greatly prolongs the preparation time of the crystal oscillator system before vacuum evaporation production, thereby reducing the evaporation efficiency of the evaporation equipment.

[0042] In order to clarify the necessity of pre-evaporation of crystal oscillator wafers, the benefits brought by pre-evaporation of crystal oscillator wafers are explained in detail below.

[0043] 1. Pre-evaporation of a new crystal oscillator can effectively reduce the signal fluctuations caused by the replacement of the crystal. If the new crystal oscillator is directly put into the evaporation rate monitoring, the output signal based on the new crystal oscillator may be unstable due to factors such as environmental adaptation and temperature balance. Through pre-evaporation, a uniform thin film can be formed on the surface of the crystal oscillator. This thin film helps to reduce the signal fluctuations caused by environmental changes and allows the crystal oscillator to reach a stable state faster. In addition, the pre-evaporation process can also be a preheating treatment for the crystal oscillator. Through pre-evaporation, the molecules and atoms inside the crystal oscillator can reach a thermal equilibrium state faster, thereby reducing the vibration instability caused by temperature differences.

[0044] 2. Pre-evaporation can ensure that when switching crystal oscillators, the new crystal oscillator has a certain film foundation, thus achieving seamless switching. This means that during the switching process, the evaporation rate monitoring device can continuously receive stable signals, avoiding the monitoring window period caused by the switching of crystal oscillators.

[0045] 3. Pre-evaporation also provides a transition buffer time for the fluctuation of evaporation rate after the crystal oscillator is switched. During the pre-evaporation process, the change of evaporation rate can be captured by the monitoring system and used for calibration and compensation, so that accurate monitoring status can be achieved more quickly when the new crystal oscillator is officially used.

[0046] 4. The pre-evaporation process can also be regarded as a calibration and calibration process for the new crystal oscillator. By pre-evaporating a film of a certain thickness, the corresponding relationship between the evaporation rate and the signal change can be established, providing an accurate reference for the subsequent formal evaporation and rate detection.

[0047] 5. Since there may be differences between the new crystal oscillator and the old crystal oscillator (such as material, size, shape, etc.), these differences may lead to inaccurate monitoring results. Pre-evaporation can reduce the impact of these differences on the monitoring results to a certain extent and improve the accuracy of monitoring.

[0048] In summary, it can be seen that it is very important to pre-evaporate the crystal oscillator before the crystal oscillator is put into evaporation rate monitoring.

[0049] Based on the foregoing description, it can be known that before monitoring the evaporation rate of the evaporation equipment, it is necessary to pre-evaporate multiple crystal oscillator chips, and this operation takes a long time. In view of this, the embodiments of the present application propose an evaporation rate monitoring device, an evaporation system and an evaporation method, and make relatively simple structural improvements to the existing components in the crystal oscillator system. With lower difficulty and cost, it is possible to monitor the evaporation rate based on one crystal oscillator chip while pre-evaporating another crystal oscillator chip simultaneously. After the crystal oscillator chip for evaporation rate monitoring is replaced by a crystal oscillator chip that has completed pre-evaporation, the crystal oscillator chip that has completed pre-evaporation can directly participate in the evaporation rate monitoring, which helps to increase the evaporation efficiency of the evaporation equipment.

[0050] Figure 1 Schematic diagram of the architecture of an evaporation system 100 applicable to an embodiment of the present application.

[0051] refer to Figure 1 As shown, the evaporation system 100 may at least include an evaporation source 110 , an evaporation rate monitoring device 200 , and an evaporation substrate 120 . The crystal oscillator of the evaporation rate monitoring device 200 is arranged opposite to the evaporation source 110 .

[0052] In addition, the above-mentioned evaporation source 110 is also opposite to the evaporation substrate 120 and is used to coat a corresponding material layer on the surface of the evaporation substrate 120 .

[0053] Since the evaporation substrate 120 and the crystal oscillator are located in the same evaporation environment, when the evaporation source 110 evaporates the evaporation material, the surface of the crystal oscillator and the surface of the evaporation substrate 120 will gradually be coated with a material layer.

[0054] The above-mentioned evaporation rate monitoring device 200 is based on the evaporation rate detection principle mentioned above. It calculates the current evaporation rate of the evaporation source 110 by detecting the change in film thickness on the surface of the crystal oscillator within unit time (which can also be reflected by the change in the mass of the material layer on the surface of the crystal oscillator, etc.), thereby realizing real-time monitoring of the evaporation rate of the evaporation source 110.

[0055] Figure 2 2 is a schematic diagram of the structure of a evaporation rate monitoring device 200 proposed in an embodiment of the present application. The schematic diagram is a top view of the evaporation rate monitoring device 200. It should be understood that the evaporation rate monitoring device is also called a rate monitoring component, or a quartz crystal microbalance (QCM), which is an ultra-sensitive mass sensor based on the piezoelectric effect.

[0056] The evaporation rate monitoring device 200 (hereinafter referred to as the device 200) is used to detect the evaporation rate of the evaporation device, and the device 200 includes:

[0057] A crystal oscillator tray 210, wherein a first surface 01 of the crystal oscillator tray 210 is used to fix N crystal oscillators, where N is greater than 2;

[0058] A first baffle 220, the first baffle 220 covers the first surface 01 of the crystal oscillator tray 210, and the first baffle 220 includes a first opening 221 and a second opening 222, wherein the first opening 221 is used to expose one of the N crystal oscillators, and the second opening 222 is used to expose another one of the N crystal oscillators;

[0059] The first rotating disk 230 at least partially covers at least partially the first baffle 220 . The first rotating disk 230 includes a first opening 231 . The first opening 231 is used to expose the second opening 222 .

[0060] refer to Figure 2 As shown, the top view of the top view is perpendicular to the first surface 01 .

[0061] It should be understood that when the evaporation rate of the crystal oscillator plate 1 located at the first opening 221 is monitored, the surface of the crystal oscillator plate 2 located at the second opening 222 is also undergoing material evaporation, that is, while the evaporation rate of the crystal oscillator plate 1 is monitored, the crystal oscillator plate 2 is undergoing pre-evaporation.

[0062] In some possible embodiments, in actual applications, when it is detected that the film thickness increase of the crystal oscillator sheet located at the first opening 221 is greater than a preset threshold, it means that the crystal oscillator sheet located at the first opening 221 can be replaced, and the crystal oscillator sheet located at the second opening 222 has completed a corresponding degree of pre-evaporation (the sheet replacement logic is described in detail in subsequent embodiments). At this time, the crystal oscillator sheet located at the second opening 222 can be switched to the position of the first opening 221.

[0063] Based on the above technical scheme, by continuing to use the existing elements in the evaporation detection device, such as the crystal oscillator tray and the baffle, and making relatively simple structural improvements to the baffle and the turntable, it is possible to achieve normal evaporation on the crystal oscillator 1 exposed by the first opening, and pre-evaporation on the crystal oscillator 2 exposed by the second opening with lower difficulty and cost. After the crystal oscillator 1 is replaced by the crystal oscillator 2, the surface of the crystal oscillator 2 has been coated with a material layer of a certain thickness, that is, the crystal oscillator 2 has completed the pre-evaporation and can directly participate in the evaporation rate monitoring operation, thereby helping to increase the evaporation efficiency of the evaporation equipment.

[0064] In some possible embodiments, the first turntable 230 is generally a circular structure, and the first opening 231 refers to a fan-shaped notch structure formed at both ends of the circumference of the first turntable 230 relative to the central axis of the first turntable 230, and the opening angle of the first opening 231 refers to the central angle of the fan-shaped notch structure. Accordingly, the first turntable 230 can be a fan-shaped structure.

[0065] In some possible embodiments, at least part of the first baffle 220 is the first opening 221 and the second opening 222. In other words, the first opening 231 will pass through the first opening 221 and the second opening 222 in sequence during the rotation of the first turntable 230, so that the evaporated material can pass through the first opening 231 and adhere to the surface of the crystal oscillator exposed by the first opening 221 and the second opening 222. When the other part of the first turntable 230 passes through the first opening 221 and / or the second opening 222, the first opening 221 and / or the second opening 222 will be blocked, so that the evaporated material cannot adhere to the crystal oscillator, thereby slowing down the speed of evaporating the material layer on the surface of the crystal oscillator, thereby increasing the service life of the crystal oscillator.

[0066] In some possible embodiments, the shape of the first baffle 220 may be consistent with the shape of the crystal oscillator tray 210; in addition, the area of ​​the first baffle 220 may also be consistent with the area of ​​the crystal oscillator tray 210. Of course, the area of ​​the first baffle 220 may also be slightly smaller than the area of ​​the crystal oscillator tray 210, as long as the projection edge of the first baffle 220 vertically projected onto the first surface 01 of the crystal oscillator tray 210 is ensured to surround the N crystal oscillators fixed to the crystal oscillator tray 210.

[0067] In some possible embodiments, reference Figure 2 As shown, the first turntable 230 may be disposed above and to the side of the first baffle 220 , so that at least a portion of the first turntable 230 covers at least a portion of the first baffle 220 .

[0068] Figure 3 2 is a schematic diagram of the structure of another evaporation rate monitoring device 200 proposed in an embodiment of the present application. The schematic diagram is a top view of the device 200.

[0069] In some possible embodiments, reference Figure 3 As shown, the first turntable 230 may also be disposed directly above the first baffle 220 , so that at least a portion of the first turntable 230 covers at least a portion of the first baffle 220 .

[0070] It should be understood that in order to ensure that the non-opening part of the first turntable 230 can 100% cover the first opening 221 and the second opening 222, when the first opening 231 of the first turntable 230 passes through the first opening 221 or the second opening 222, the first opening 221 or the second opening 222 can be completely located inside the arc of the fan-shaped area corresponding to the first opening.

[0071] In some possible embodiments, the opening angle of the first opening 231 is within the range of [10°, 50°]. Figure 2The opening angle of the first opening shown is 36°, so the area of ​​the first opening 231 accounts for 1 / 10 of the area of ​​the entire first turntable 230. Due to the obstruction of the first turntable 230, the amount of evaporated material used to adhere to the surface of the crystal oscillator exposed by the first opening 221 or the second opening 222 will be reduced to 1 / 10 of the original material amount, or even lower than 1 / 10 of the original material amount.

[0072] Figure 4 2 is a schematic diagram of the structure of another evaporation rate monitoring device 200 proposed in an embodiment of the present application. The schematic diagram is a top view of the device 200.

[0073] refer to Figure 4 As shown, the first opening 231 may also be set to be smaller, such as 10°, so as to further extend the service life of the crystal oscillator.

[0074] Among them, the opening angle of the above-mentioned first opening 231 can be adaptively adjusted according to different evaporation processes and evaporation materials. Even with the iteration of technology, the numerical range of the above-mentioned opening angle can be adaptively adjusted.

[0075] In some possible embodiments, the rotation speed of the first turntable 230 is in the range of [80r / s, 150r / s]. Of course, the rotation speed of the first turntable 230 can be adaptively adjusted according to different evaporation processes and evaporation materials. Even with the iteration of technology, the numerical range of the rotation speed of the first turntable 230 can be adaptively adjusted.

[0076] Figure 5 It is a structural schematic diagram of another evaporation rate monitoring device 200 proposed in an embodiment of the present application.

[0077] In some possible embodiments, the crystal oscillator is used to evaporate a material film (or material layer), so that by detecting the vibration frequency of the crystal oscillator, the thickness of the evaporated material on the surface of the crystal oscillator is calculated, and then the evaporation rate of the evaporation device is calculated. In view of this, the above-mentioned device 200 may also include:

[0078] A film thickness detector 250 , wherein the film thickness detector 250 is configured to: detect a film thickness of a first surface of the crystal oscillator plate located at the first opening 221 ;

[0079] The chip changer 260 is connected to the crystal oscillator tray 210, and the chip changer 260 is configured to: when the increase in the film thickness of the first surface reaches the first film thickness threshold, switch the crystal oscillator located at the second opening 222 to the position of the first opening 221, and switch the crystal oscillator located under the first baffle 220 to the position of the second opening 222.

[0080] Among them, the first surface film thickness is the thickness of the material layer deposited on the surface of the crystal oscillator, and the maximum film thickness refers to the maximum thickness of the material layer deposited on the surface of the crystal oscillator under the premise that the crystal oscillator can be used normally. That is, when the thickness of the material layer deposited on the surface of the crystal oscillator reaches the maximum film thickness, the crystal oscillator cannot be used to detect the evaporation rate of the evaporation equipment.

[0081] In some possible embodiments, the film thickness detector 250 and the film changer 260 are also existing components of the existing evaporation rate monitoring device.

[0082] In some possible embodiments, the film changer 260 may be controlled by a control module, and the control module may acquire detection data of the film thickness detector 250 .

[0083] It should be understood that when the thickness of the material layer evaporated on the surface of the crystal oscillator reaches 10% of the maximum film thickness of the crystal oscillator, the crystal oscillator can be considered to have completed the pre-evaporation.

[0084] In some possible embodiments, the first film thickness threshold may be less than or equal to 50% of the maximum film thickness of the crystal oscillator.

[0085] For example, taking the first film thickness threshold as 50% of the maximum film thickness as an example, when the evaporation device performs evaporation, Figure 5 The device 200 shown participates in evaporation and operates so that the material layer begins to be deposited on the surface of the crystal oscillator plate 1 exposed by the first opening 221 and the crystal oscillator plate 2 exposed by the second opening 222. Assuming that at the start of evaporation, no material layer is evaporated on the surface of the N crystal oscillators (crystal oscillator plate 1 to crystal oscillator plate N) sequentially arranged in the crystal oscillator plate tray 210, then when it is detected that the surface film thickness of the crystal oscillator plate 1 reaches 50% of the maximum film thickness (that is, the increase in the first surface film thickness reaches the first film thickness threshold), the control chip changer 260 will replace the crystal oscillator plate 1 exposed to the first opening 221 and replace it with the crystal oscillator plate 2. At this time, the second opening 222 exposes the crystal oscillator plate 3 previously located under the first baffle 220. Since the crystal oscillator plate 1 and the crystal oscillator plate 2 are evaporated at the same time, the surface of the crystal oscillator plate 2 is The surface film thickness is 50% of the maximum film thickness, that is, the crystal oscillator plate 2 has completed pre-evaporation; the evaporation rate monitoring operation continues to be executed, and when it is detected that the surface film thickness of the crystal oscillator plate 2 has reached the maximum film thickness (that is, the increase in the first surface film thickness has reached the first film thickness threshold), the control chip changer 260 will replace the crystal oscillator plate 2 exposed to the first opening 221 and replace it with the crystal oscillator plate 3. At this time, the second opening 222 exposes the crystal oscillator plate 4 previously located under the first baffle 220. Since the crystal oscillator plate 2 and the crystal oscillator plate 3 are evaporated at the same time, the surface film thickness of the crystal oscillator plate 3 is 50% of the maximum film thickness, that is, the crystal oscillator plate 3 has completed pre-evaporation. And so on.

[0086] In some possible embodiments, the film thickness detector 250 may also be configured to: detect the film thickness of the second surface of the crystal oscillator located at the second opening 222;

[0087] The above-mentioned chip changer 260 can also be configured to: when the second surface film thickness reaches the second film thickness threshold, switch the crystal oscillator located at the second opening 222 to the position of the first opening 221, and switch the crystal oscillator located under the first baffle 220 to the position of the second opening 222.

[0088] In some possible embodiments, the second film thickness threshold may be equal to the first film thickness threshold, that is, less than or equal to 50% of the maximum film thickness of the crystal oscillator.

[0089] For example, taking the second film thickness threshold as 50% of the maximum film thickness as an example, when the evaporation device performs evaporation, Figure 5 The device 200 shown participates in evaporation and operates so that material layers begin to be deposited on the surfaces of the crystal oscillator plate 1 exposed by the first opening 221 and the crystal oscillator plate 2 exposed by the second opening 222. Assuming that at the start of evaporation, no material layer is evaporated on the surfaces of the N crystal oscillators (crystal oscillator plate 1 to crystal oscillator plate N) that are sequentially fixed and arranged in the crystal oscillator plate tray 210, then when it is detected that the surface film thickness of the crystal oscillator plate 2 reaches 50% of the maximum film thickness (that is, the increase in the second surface film thickness reaches the second film thickness threshold), the crystal oscillator plate 2 has completed pre-evaporation, and the control chip changer 260 can replace the crystal oscillator plate 1 exposed to the first opening 221 with the crystal oscillator plate 2. At this time, the second opening 222 exposes the crystal oscillator plate 3 that was previously located under the first baffle 220; the evaporation rate monitoring operation continues to be executed, and when it is detected that the surface film thickness of the crystal oscillator plate 2 reaches 50% of the maximum film thickness (that is, the increase in the second surface film thickness reaches the second film thickness threshold), the crystal oscillator plate 2 has completed pre-evaporation, and the control chip changer 260 can replace the crystal oscillator plate 1 exposed to the first opening 221 with the crystal oscillator plate 2. At this time, the second opening 222 exposes the crystal oscillator plate 3 that was previously located under the first baffle 220; the evaporation rate monitoring operation continues to be executed. When the surface film thickness of the crystal oscillator plate 3 reaches the maximum film thickness (i.e., the increase in the second surface film thickness reaches the second film thickness threshold), the surface film thickness of the crystal oscillator plate 3 is 50% of the maximum film thickness, i.e., the crystal oscillator plate 3 has completed pre-evaporation. Since the crystal oscillator plate 2 and the crystal oscillator plate 3 are evaporated at the same time, the surface film thickness of the crystal oscillator plate 2 has reached the maximum film thickness, i.e., the service life of the crystal oscillator plate has been reached and it needs to be replaced. Therefore, it is necessary to control the plate changer 260 to replace the crystal oscillator plate 2 exposed to the first opening 221 with the crystal oscillator plate 3. At this time, the second opening 222 exposes the crystal oscillator plate 4 previously located under the first baffle 220. And so on.

[0090] Based on the above technical solution, through the above-mentioned film changing mechanism, it is possible to achieve that during the period when N crystal oscillator films monitor the evaporation rate of the evaporation equipment, while monitoring the evaporation rate of the evaporation equipment based on one crystal oscillator film, pre-evaporation can be performed on another crystal oscillator film, and when the material layer deposited on the surface of the crystal oscillator film used to monitor the evaporation rate reaches a certain thickness, it can be seamlessly switched to another crystal oscillator film that has completed pre-evaporation, without the need to perform separate pre-evaporation operations on multiple crystal oscillator films, thereby helping to increase the evaporation efficiency of the evaporation equipment.

[0091] Figure 6 2 is a schematic diagram of the structure of another evaporation rate monitoring device 200 proposed in an embodiment of the present application. The schematic diagram is a top view of the device 200.

[0092] refer to Figure 6 As shown, Figure 6 The device 200 in the embodiment is compared with the aforementioned Figures 2 to 5 The difference between the device 200 in any of the examples is only the size of the first rotating disk 230, that is, Figure 6 In the device 200 shown, at least part of the first turntable 230 will only block the second opening 222, that is, at least part of the first baffle 220 is the second opening 222. In other words, during the rotation of the first turntable 230, the first opening 231 only passes through the second opening 222, so that the evaporation material can adhere to the surface of the crystal oscillator exposed by the second opening 222 through the first opening 231. When the other parts of the first turntable 230 pass through the second opening 222, the second opening 222 will be blocked, so that the evaporation material cannot adhere to the crystal oscillator, thereby slowing down the speed of evaporating the material layer on the surface of the crystal oscillator. However, there is no turntable for blocking above the first opening 221, so during the evaporation rate monitoring period, the evaporation rate of the crystal oscillator exposed by the first opening 221 will not slow down.

[0093] Based on the above-mentioned embodiment, it can be known that the opening angle of the first opening 231 of the first turntable 230 is within the range of [10°, 50°]. In this embodiment, the opening angle of the first opening 231 can be set to 36°, so that the rate of evaporation of the material layer on the surface of the crystal oscillator exposed by the second opening 222 is reduced to 1 / 10 of the original. Then, when the surface film thickness of the crystal oscillator exposed by the first opening 231 reaches the maximum film thickness, the surface film thickness of the crystal oscillator exposed by the second opening 222 reaches 10% of the maximum film thickness. It can be seen that the crystal oscillator has completed the pre-evaporation and can be used to replace the crystal oscillator located in the first opening 221 which has reached the end of its service life.

[0094] Figure 7 2 is a schematic diagram of the structure of another evaporation rate monitoring device 200 proposed in an embodiment of the present application. The schematic diagram is a top view of the device 200.

[0095] refer to Figure 7 As shown, compared with the above Figure 6 The device 200 shown, Figure 7 The device 200 shown may also include: a second turntable 240, which at least partially covers the first opening 221, and the second turntable 240 includes a second opening 241, which is used to expose the first opening 221, and the opening angle of the first opening 231 is smaller than the opening angle of the second opening 241.

[0096] It should be understood that since the opening angle of the first opening 231 is smaller than the opening angle of the second opening 241, it can slow down the speed of evaporating the material layer on the surface of the crystal oscillator piece exposed by the first opening 221, and at the same time, when the surface film thickness of the crystal oscillator piece exposed by the first opening 221 reaches the maximum film thickness, the surface film thickness of the crystal oscillator piece exposed by the second opening 222 has not yet reached the maximum film thickness and is in a state of completing the pre-evaporation film thickness.

[0097] For example, the opening angle of the second opening 241 can be set to 50°, while the opening angle of the first opening 231 can be set to 10°. Based on this, when the surface film thickness of the crystal oscillator exposed by the first opening 221 reaches the maximum film thickness, the surface film thickness of the crystal oscillator exposed by the second opening 222 is only 20% of the maximum film thickness and is in a state of completing the pre-evaporation film thickness.

[0098] With the above Figure 5 The device 200 shown is similar to the above Figure 6 or Figure 7 The film thickness detector 250 of the device 200 shown can also be configured to: detect the first surface film thickness of the crystal oscillator located at the first opening 221; accordingly, the film changer 260 can also be configured to: when the first surface film thickness reaches the first film thickness threshold, switch the crystal oscillator located at the second opening 222 to the position of the first opening 221, and switch the crystal oscillator located under the first baffle 220 to the position of the second opening 222. At this time, the first film thickness threshold can be set to be less than or equal to the above-mentioned maximum film thickness.

[0099] For example, taking the first film thickness threshold as the maximum film thickness as an example, when the evaporation device performs evaporation, Figure 6 or Figure 7The device 200 shown participates in evaporation and operates so that material layers begin to be deposited on the surfaces of the crystal oscillator plate 1 exposed by the first opening 221 and the crystal oscillator plate 2 exposed by the second opening 222. Assume that at the start of evaporation, no material layer is evaporated on the surfaces of the N crystal oscillators (crystal oscillator plate 1 to crystal oscillator plate N) that are sequentially fixed and arranged in the crystal oscillator plate tray 210. Then, when it is detected that the surface film thickness of the crystal oscillator plate 1 reaches the maximum film thickness, the control chip changer 260 will replace the crystal oscillator plate 1 exposed to the first opening 221 and replace it with the crystal oscillator plate 2. At this time, the second opening 222 exposes the crystal oscillator plate 3 previously located under the first baffle 220. Since the crystal oscillator plate 1 and the crystal oscillator plate 2 are evaporated at the same time, but the evaporation rate of the crystal oscillator plate 2 is much lower than the evaporation rate of the crystal oscillator plate 1, the surface film thickness of the crystal oscillator plate 2 is less than the maximum film thickness at this time, and the pre-evaporation is completed; the evaporation rate monitoring The measurement operation continues to be performed. When it is detected that the surface film thickness of the crystal oscillator plate 2 reaches the maximum film thickness, the control plate changer 260 replaces the crystal oscillator plate 2 exposed to the first opening 221 with the crystal oscillator plate 3. At this time, the second opening 222 exposes the crystal oscillator plate 4 previously located under the first baffle 220. Since the crystal oscillator plate 2 and the crystal oscillator plate 3 are evaporated at the same time, but the evaporation rate of the crystal oscillator plate 3 is much lower than the evaporation rate of the crystal oscillator plate 2, the surface film thickness of the crystal oscillator plate 3 is less than the maximum film thickness, and the pre-evaporation is completed. And so on.

[0100] Based on the above technical solution, the first opening 221 and the second opening 222 are respectively blocked to different degrees by two turntables, and the angles of the two turntable openings are reasonably set so that when the surface film thickness of the crystal oscillator exposed by the first opening 221 reaches the maximum film thickness, the crystal oscillator exposed by the second opening 222 can be in a state of completing pre-evaporation. Not only can it seamlessly switch to another crystal oscillator that has completed pre-evaporation when the material layer deposited on the surface of the crystal oscillator used to monitor the evaporation rate reaches a certain thickness, without the need to perform separate pre-evaporation operations on multiple crystal oscillators, which helps to increase the evaporation efficiency of the evaporation equipment and can further extend the service life of the crystal oscillator.

[0101] In some possible embodiments, before any device 200 proposed in the embodiments of the present application starts to monitor the evaporation rate, the crystal oscillator sheet 1 to be set at the position of the first opening 221 can be pre-evaporated, and other crystal oscillators do not need this operation, so that when the evaporation device starts to evaporate the substrate, the crystal oscillator sheet 1 exposed by the first opening 221 can be directly applied to the operation of monitoring the evaporation rate. Alternatively, before the evaporation device evaporates the substrate, the crystal oscillator sheets exposed by the two openings of the device 200 are pre-evaporated.

[0102] In some possible embodiments, the positions of the first opening 221 and the second opening 222 of any device 200 proposed in the embodiments of the present application may be adjacent or non-adjacent. In the case where the two openings are non-adjacent, the changing mechanism of the wafer changer 260 also needs to be adaptively adjusted. Assume that the crystal oscillator wafer tray 210 is provided with 10 crystal oscillators (crystal oscillator wafers 1 to 10), and there is a setting interval of a crystal oscillator wafer between the first opening 221 and the second opening 222. In the initial stage of evaporation, the first opening 221 is used to expose the crystal oscillator wafer 1, and the second opening 222 is used to expose the crystal oscillator wafer 3. When the crystal oscillator wafer 1 needs to be replaced, the wafer changer 260 controls the crystal oscillator wafer tray 210 to rotate so that the crystal oscillator wafer 3 replaces the crystal oscillator wafer 1 and comes to the position of the first opening 221, while the crystal oscillator wafer 2 is still covered by the first baffle 220. At this time, the position of the second opening 222 is the crystal oscillator wafer 5, and so on. When the crystal oscillator plate 9 needs to be replaced, the crystal oscillator plate tray 210 needs to be controlled by the crystal oscillator plate 260 to rotate so that the crystal oscillator plate 2 replaces the crystal oscillator plate 9 and comes to the position of the first opening 221. At this time, the position of the second opening 222 is the crystal oscillator plate 4, and so on. When the crystal oscillator plate 10 needs to be replaced, it means that all the crystal oscillators have been used up and the next batch of crystal oscillators needs to be replaced.

[0103] The present application also provides a vapor deposition system. Figure 8 1 is a schematic diagram of the structure of a vapor deposition system 800 proposed in an embodiment of the present application. The vapor deposition system 800 is improved on the basis of the above-mentioned vapor deposition system 100.

[0104] refer to Figure 8 As shown, the evaporation system 800 includes:

[0105] The evaporation source 810 and any one of the evaporation rate monitoring devices 200 proposed in the embodiments of the present application, wherein the first opening 221 and the second opening 222 of the device 200 are arranged opposite to the evaporation source 810 .

[0106] In some possible embodiments, the above-mentioned evaporation system also includes an evaporation controller 820; based on this, the film thickness detector 250 of the evaporation rate detection device is used to determine the real-time evaporation rate of the evaporation source 810 according to the change in the film thickness on the surface of the crystal oscillator located at the first opening 221 within unit time, and send the real-time evaporation rate to the evaporation controller 820; the evaporation controller 820 is used to determine the power control signal according to the real-time evaporation rate, and send the power control signal to the power supply P, and the power control signal is used to adjust the power of the power supply P to provide electrical energy to the evaporation source 810, so as to control the evaporation rate of the evaporation source 810.

[0107] In some possible embodiments, the variation of the film thickness on the surface of the crystal oscillator piece within a unit time may also be characterized by the variation of the mass of the film layer on the surface of the crystal oscillator piece within a unit time.

[0108] Based on the above technical solution, the film thickness detector of the evaporation rate detection device can also feedback the real-time evaporation rate of the evaporation source 810 to the evaporation controller 820, so that the evaporation controller 820 can dynamically adjust the power supplied by the power supply based on the real-time evaporation rate and thereby control the evaporation rate of the evaporation source 810, thereby realizing closed-loop control of the evaporation operation of the evaporation system 800.

[0109] It should be noted that the above-mentioned film changing mechanism mentioned in the embodiment of the present application can be completed by controlling the film changer 260 through a control module (or processor, or control chip) that can exchange data with the film thickness detector 250 and the film changer 260 in any device 200 proposed in the embodiment of the present application. Therefore, the embodiment of the present application proposes a vapor deposition method, which can be executed by the control module.

[0110] Fig. 9 It is a schematic flow chart of an evaporation method 900 proposed in an embodiment of the present application.

[0111] The method 900 is used to implement the above-mentioned film changing mechanism, so it belongs to the pre-evaporation method in the evaporation method. The method 900 is operated as follows:

[0112] S911: upon receiving the first detection data from the film thickness detector, go to S921, the first detection data is used to indicate that the increase in the film thickness of the first surface of the crystal oscillator piece currently located at the first opening reaches the first film thickness threshold.

[0113] S913: When receiving the second detection data from the film thickness detector, go to S923, the second detection data is used to indicate that the film thickness of the first surface of the crystal oscillator piece currently located in the first opening reaches the maximum film thickness.

[0114] S915: upon receiving the third detection data from the film thickness detector, go to S925, the third detection data being used to indicate that the increase in the film thickness of the second surface of the crystal oscillator piece currently located at the second opening has reached the second film thickness threshold.

[0115] Among them, S911, S913 and S915 are parallel solution steps.

[0116] S921: Control the chip changer to switch the crystal oscillator chip located at the second opening to the position of the first opening, and switch the crystal oscillator chip located under the first baffle to the position of the second opening.

[0117] S923: Control the chip changer to switch the crystal oscillator chip located at the second opening to the position of the first opening, and switch the crystal oscillator chip located under the first baffle to the position of the second opening.

[0118] S925: Control the wafer changer to switch the crystal oscillator wafer located at the second opening to the position of the first opening, and switch the crystal oscillator wafer located under the first baffle to the position of the second opening.

[0119] It should be understood that the above-mentioned descriptions on the first film thickness threshold, the second film thickness threshold and the maximum film thickness, as well as the detailed examples of the film replacement mechanism, are detailed in the corresponding descriptions of the aforementioned embodiments and will not be repeated here.

[0120] Based on the above technical solution, through the chip changing mechanism executed by the above method, it is possible to realize that during the period when N crystal oscillator chips monitor the evaporation rate of the evaporation equipment, while monitoring the evaporation rate of the evaporation equipment based on one crystal oscillator chip, pre-evaporation can be performed on another crystal oscillator chip, and when the material layer deposited on the surface of the crystal oscillator chip used to monitor the evaporation rate reaches a certain thickness, it can be seamlessly switched to another crystal oscillator chip that has completed pre-evaporation, without the need to perform separate pre-evaporation operations on multiple crystal oscillator chips, thereby helping to increase the evaporation efficiency of the evaporation equipment.

[0121] Correspondingly, an embodiment of the present application also proposes a control device, including a processor and a memory, wherein the processor and the memory are connected, wherein the memory is used to store program codes, and the processor is used to call the program codes to execute the above-mentioned evaporation method 900.

[0122] Those of ordinary skill in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0123] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0124] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0125] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0126] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0127] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application can be essentially or partly embodied in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium and includes several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods described in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0128] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A evaporation rate monitoring device, characterized in that: The evaporation rate monitoring device comprises a crystal oscillator tray (210) and a first baffle (220), wherein the first surface (01) of the crystal oscillator tray (210) is used to fix N crystal oscillators, wherein N is greater than 2, and the first baffle (220) covers the first surface (01) of the crystal oscillator tray (210). The first baffle (220) comprises a first opening (221) and a second opening (222), the first opening (221) being used to expose one of the N crystal oscillator plates, and the second opening (222) being used to expose another of the N crystal oscillator plates; The evaporation rate monitoring device also includes: a first turntable (230), at least a portion of the first turntable (230) covers at least a portion of the first baffle (220), and the first turntable (230) includes a first opening (231), and the first opening (231) is used to expose the second opening (222).

2. The evaporation rate monitoring device according to claim 1, characterized in that: At least a portion of the first baffle (220) is the first opening (221) and the second opening (222), or at least a portion of the first baffle (220) is the second opening (222).

3. The evaporation rate monitoring device according to claim 2, characterized in that: When at least a portion of the first baffle (220) is the second opening (222), the evaporation rate monitoring device further comprises: A second turntable (240), wherein at least a portion of the second turntable (240) covers the first opening (221), the second turntable (240) comprises a second opening (241), the second opening (241) is used to expose the first opening (221), and an opening angle of the first opening (231) is smaller than an opening angle of the second opening (241).

4. The evaporation rate monitoring device according to claim 2 or 3, characterized in that: The crystal oscillator is used for evaporating a material film, and the evaporation rate monitoring device further comprises: A film thickness detector (250), the film thickness detector (250) being configured to: detect the film thickness of a first surface of the crystal oscillator plate located at the first opening (221), or detect the film thickness of a second surface of the crystal oscillator plate located at the second opening (222); A wafer changer (260), the wafer changer (260) being connected to the crystal oscillator wafer tray (210), the wafer changer (260) being configured to: when the increase in the first surface film thickness reaches a first film thickness threshold, or the first surface film thickness reaches a maximum film thickness, or the second surface film thickness reaches a second film thickness threshold, switch the crystal oscillator wafer located at the second opening (222) to the position of the first opening (221), and switch the crystal oscillator wafer located under the first baffle (220) to the position of the second opening (222), the first film thickness threshold being greater than or equal to the second film thickness threshold, and the first film thickness threshold being less than or equal to the maximum film thickness, and when the first surface film thickness reaches the maximum film thickness, the crystal oscillator wafer cannot be used to detect the evaporation rate.

5. The evaporation rate monitoring device according to claim 4, characterized in that: When the first film thickness threshold is equal to the second film thickness threshold, the first film thickness threshold is less than or equal to 50% of the maximum film thickness of the crystal oscillator; or, when the first film thickness threshold is greater than the second film thickness threshold, the first film thickness threshold is equal to the maximum film thickness.

6. The evaporation rate monitoring device according to any one of claims 1 to 5, characterized in that: The opening angle of the first opening (231) is within the range of [10°, 50°].

7. The evaporation rate monitoring device according to any one of claims 1 to 6, characterized in that: The rotation speed of the first rotating disk (230) is within the range of [80 r / s, 150 r / s].

8. A vapor deposition system, characterized in that: It comprises an evaporation source (810) and an evaporation rate monitoring device as described in any one of claims 1 to 7, wherein a first opening (221) and a second opening (222) of the evaporation rate monitoring device are arranged opposite to the evaporation source (810).

9. The evaporation system according to claim 8, characterized in that: The evaporation system also includes an evaporation controller (820); The film thickness detector (250) of the evaporation rate monitoring device is used to determine the real-time evaporation rate of the evaporation source (810) according to the change in the film thickness on the surface of the crystal oscillator plate located at the first opening (221) within a unit time, and send the real-time evaporation rate to the evaporation controller (820); The evaporation controller (820) is used to determine a power control signal according to the real-time evaporation rate and send a power control signal to a power supply, wherein the power control signal is used to adjust the power of the power supply to provide electrical energy to the evaporation source (810) to control the evaporation rate of the evaporation source (810).

10. A vapor deposition method, characterized in that: Applied to the evaporation rate monitoring device according to any one of claims 1 to 7, the method comprising: Upon receiving the first detection data from the film thickness detector, the control chip changer switches the crystal oscillator chip located at the second opening to the position of the first opening, and switches the crystal oscillator chip located under the first baffle to the position of the second opening, wherein the first detection data is used to indicate that the increase in the first surface film thickness of the crystal oscillator chip currently located at the first opening reaches the first film thickness threshold; or, Upon receiving the second detection data from the film thickness detector, the control wafer changer switches the crystal oscillator located at the second opening to the position of the first opening, and switches the crystal oscillator located under the first baffle to the position of the second opening, wherein the second detection data is used to indicate that the first surface film thickness of the crystal oscillator currently located at the first opening reaches the maximum film thickness; or, When receiving the second detection data from the film thickness detector, the film changer is controlled to switch the crystal oscillator located at the second opening to the position of the first opening, and to switch the crystal oscillator located under the first baffle to the position of the second opening, and the second detection data is used to indicate that the increase in the second surface film thickness of the crystal oscillator currently located at the second opening reaches the second film thickness threshold.

11. A control device, characterized in that: The method comprises a processor and a memory, wherein the processor and the memory are connected, wherein the memory is used to store program codes, and the processor is used to call the program codes to execute the method according to claim 10.

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