Semiconductor processing equipment and gas conveying system thereof
By using fixing devices to fix the intake pipeline in semiconductor manufacturing equipment, the uneven distribution and safety hazards caused by the skewed gas pipeline are solved, and the stability of the intake pipeline and the safety of the substrate in the reaction chamber are achieved, thus improving the stability of the intake pipeline and improving the Equipment operation efficiency and output.
Patent Information
- Application Number
- CN202411122419.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-15
- Publication Date
- 2024-12-27
AI Technical Summary
During semiconductor manufacturing, the gas pipeline may be skewed due to improper operation or self-weight reasons, resulting in uneven gas distribution, inconsistent deposition rate, reduced reaction efficiency, increased equipment maintenance difficulty, affected process stability, and safety hazards.
Using a fixing device, at least two fixed blocks are tightly fitted on the inner wall of the reaction chamber, and the intake pipeline is fixed to ensure its vertical state, avoid contact with the inner wall of the reaction chamber, simplify the installation process, and improve stability and safety.
Maintain the vertical state of the intake pipeline, ensure uniform gas distribution, improve deposition rate and reaction efficiency, reduce equipment maintenance difficulty, enhance safety, and improve equipment operation efficiency and output.
Smart Images
Figure CN119194402A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to semiconductor manufacturing equipment, and in particular to semiconductor processing equipment and a gas delivery system thereof. Background Art
[0002] The CVD (Chemical Vapor Deposition) reaction chamber is a key device for chemical vapor deposition. The reaction gas from the gas source is transported into the reaction chamber through the gas pipeline to perform deposition on the substrate in the reaction chamber. During the equipment installation process, the gas pipeline may be skewed due to improper operation, or during the deposition process, the gas pipeline may be skewed due to its own weight or other reasons, resulting in uneven gas distribution, inconsistent deposition rate, reduced reaction efficiency, increased difficulty in equipment maintenance, affected process stability, and potential safety hazards.
[0003] The statements herein merely provide background art related to the present invention and do not necessarily constitute prior art. Summary of the invention
[0004] The object of the present invention is to provide a semiconductor processing equipment and a gas delivery system thereof, so that the air intake pipeline remains in a vertical state, ensuring that the air intake pipeline will not be skewed, avoiding the contact between the air intake pipeline and the inner wall of the reaction chamber to generate solid particles, simplifying the installation process, improving the stability of the air intake pipeline and the safety of the substrate in the reaction chamber, ensuring the stable operation of the semiconductor equipment, improving the equipment operation efficiency, and increasing the output.
[0005] In order to achieve the above object, the present invention provides a semiconductor processing device, comprising:
[0006] Reaction chamber;
[0007] A wafer boat is arranged in the reaction chamber, and the wafer boat carries a plurality of substrates arranged in a vertical direction;
[0008] An air intake pipeline extending vertically from the bottom of the reaction chamber to the top of the reaction chamber;
[0009] The fixing device comprises at least two fixing blocks, the fixing blocks are arranged on the inner wall of the reaction chamber, the fixing blocks are respectively located on both sides of the air intake pipeline, and the fixing blocks are tightly fitted with the air intake pipeline.
[0010] The air inlet end of the air inlet pipeline is connected to an external gas source, the air outlet end of the air inlet pipeline is in a U-shaped structure, and an air outlet is arranged at the end of the air outlet end.
[0011] The fixing block and the reaction chamber are integrally formed, and the reaction chamber and the fixing block are both made of quartz.
[0012] The fixing blocks located on both sides of the air intake pipeline are in the same horizontal plane, and the distance between the two fixing blocks is equal to the outer diameter of the air intake pipeline.
[0013] The length of the fixing block is set to 2 mm, the width is set to 2 mm, and the thickness is set to half of the outer diameter of the air intake pipeline.
[0014] The material of the air intake pipeline is quartz.
[0015] The present invention also provides a gas delivery system for semiconductor processing equipment, wherein a wafer boat is arranged in a reaction chamber of the semiconductor processing equipment, and a plurality of substrates arranged in a vertical direction are carried on the wafer boat, and the gas delivery system comprises:
[0016] An air intake pipeline extending vertically from the bottom of the reaction chamber to the top of the reaction chamber;
[0017] an external gas source connected to the gas inlet end of the gas inlet pipeline;
[0018] The fixing device comprises at least two fixing blocks, the fixing blocks are arranged on the inner wall of the reaction chamber, the fixing blocks are respectively located on both sides of the air intake pipeline, and the fixing blocks are tightly fitted with the air intake pipeline.
[0019] The air outlet end of the air inlet pipeline is in a U-shaped structure, and an air outlet is arranged at the end of the air outlet end.
[0020] The fixing block and the reaction chamber are integrally formed, and the reaction chamber and the fixing block are both made of quartz.
[0021] The fixing blocks located on both sides of the air intake pipeline are in the same horizontal plane, and the distance between the two fixing blocks is equal to the outer diameter of the air intake pipeline.
[0022] The length of the fixing block is set to 2 mm, the width is set to 2 mm, and the thickness is set to half of the outer diameter of the air intake pipeline.
[0023] The material of the air intake pipeline is quartz.
[0024] The present invention installs and fixes the air intake pipeline by adding a fixing device, so that the air intake pipeline remains in a vertical state, ensuring that the air intake pipeline will not be skewed, and will not collide and rub against the inner wall of the reaction chamber due to shaking, thereby avoiding the generation of solid particles, simplifying the installation process, improving the stability of the air intake pipeline and the safety of the substrate in the reaction chamber, ensuring the stable operation of the semiconductor equipment, improving the equipment operation efficiency, and increasing the output. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 It is a schematic diagram of the structure of a chemical vapor deposition device.
[0026] Figure 2 It is a structural schematic diagram of an air intake pipeline with a U-shaped air outlet end.
[0027] Figure 3 It is a schematic diagram of the structure of the fixing device of the intake pipe.
[0028] Figure 4 yes Figure 3 Side view of the fixing device. DETAILED DESCRIPTION
[0029] The following is based on Figure 1 to Figure 4 , specifically describe the preferred embodiments of the present invention.
[0030] like Figure 1 As shown, the chemical vapor deposition equipment comprises a reaction chamber 1, wherein a wafer boat 2 is arranged in the reaction chamber 1, and a plurality of substrate slots (not shown in the figure) are arranged on the wafer boat 2 in the vertical direction, and the substrate slots carry substrates 3. The precursor gas is transported into the reaction chamber 1 through a gas delivery system, and the reaction gas is chemically reacted on the surface of the substrate 3 by controlling the temperature and gas pressure in the reaction chamber 1, so as to generate solid products and deposit them into thin films. The gas delivery system comprises a gas source (not shown in the figure) and an air inlet pipeline 4, one end of the air inlet pipeline 4 is connected to the gas source, and the other end extends into the reaction chamber 1 from the bottom of the side wall 101 of the reaction chamber 1, and the air inlet pipeline 4 extends from the bottom of the reaction chamber 1 to the top of the reaction chamber 1 in the vertical direction, and the reaction gas from the gas source diffuses into the reaction chamber 1 from the gas outlet 401 located at the top of the air inlet pipeline 4, and reacts with the substrate 3 located in the reaction chamber 1.
[0031] Because chemical vapor deposition processing usually needs to be carried out in a relatively high temperature environment, the material of the reaction chamber 1 and the air inlet pipe 4 is usually quartz. Quartz can withstand the high temperature during the chemical vapor deposition process and is not easily thermally deformed, showing good high temperature resistance. The chemical stability of quartz makes it difficult for it to react with the reaction gas, thereby ensuring the purity of the process, reducing impurities in the system, and avoiding pollution during the deposition process.
[0032] The Super Flat Poly process is a technology for manufacturing super flat polysilicon (Polysilicon, Poly for short) thin films. Polysilicon thin films are very important in semiconductor manufacturing, especially in integrated circuits and micro-electromechanical systems (MEMS), where they are used as gate materials, interconnects, resistors and capacitors, etc. The super flat polysilicon process has very high requirements for the quality and consistency of polysilicon thin film deposition, while the gas outlet 401 at the top of the ordinary air inlet pipeline 4 faces the top of the reaction chamber 1. The reaction gas entering the reaction chamber 1 from the gas outlet 401 is first sprayed to the top of the reaction chamber 1, and then diffuses downward to the surface of the substrate 3 after being blocked by the top of the reaction chamber 1. Therefore, it is difficult to obtain uniform gas distribution, and the requirements of the super flat polysilicon process cannot be met.
[0033] According to the ultra-flat polysilicon process, the air intake pipeline 4 is improved, such as Figure 2 As shown, the inlet end of the inlet pipeline 4 is connected to the gas source, the outlet end 402 of the inlet pipeline 4 is still located at the top of the reaction chamber 1, the outlet end 402 is a U-shaped structure, and the outlet port 401 is located at the end of the outlet end 402. After the outlet end 402 is turned and guided, the outlet direction of the outlet port 401 is relative to Figure 1 After a 180° reversal, the gas outlet 401 now faces the substrate 3 , and the reaction gas entering the reaction chamber 1 from the gas outlet 401 will no longer encounter obstruction at the top of the reaction chamber 1 , and can be directly sprayed downward into the reaction chamber 1 to come into contact with the substrate 3 .
[0034] The use of a U-shaped outlet end of the air inlet pipe promotes the uniform distribution and optimized mixing of the reaction gas in the reaction chamber, effectively reduces gas residue and particle generation, and improves the gas transmission efficiency. The stability of this structure helps to reduce deformation caused by mechanical stress or thermal stress and ensure the accuracy of gas distribution. It is also easy to clean and maintain, which helps to maintain the long-term stability and repeatability of the process. And it can adapt to different gases and deposition conditions, providing the flexibility required by the process, thereby improving production efficiency. At the same time, due to the use of a U-shaped outlet end, the top weight of the air inlet pipe is relatively large, presenting a top-heavy state, causing the air inlet pipe to be easily skewed, and the vertical state of the air inlet pipe 4 cannot be ensured, which leads to uneven distribution of the reaction gas entering the reaction chamber, affecting the deposition process of the substrate, and the skewed air inlet pipe will rub against the side wall of the reaction chamber to produce solid particles, which are deposited on the substrate, resulting in defects in the deposited film, a decrease in the yield rate, and solid particles falling on the inner wall of the reaction chamber, resulting in particle contamination, reducing the service life of the device.
[0035] like Figure 3 and Figure 4 As shown, the present invention provides a fixing device for an air intake pipeline, the fixing device comprising at least two fixing blocks 5, the fixing blocks 5 being arranged on the inner wall of the side wall 101 of the reaction chamber 1, the fixing blocks 5 being respectively located on both sides of the air intake pipeline 4, and the fixing blocks 5 being tightly fitted with the air intake pipeline 4, thereby ensuring that the air intake pipeline 4 is securely fixed and kept vertical without being skewed, and without colliding and rubbing with the inner wall of the reaction chamber due to shaking, thereby avoiding the generation of solid particles.
[0036] like Figure 4 As shown, in one embodiment of the present invention, the fixing blocks 5 located on both sides of the air intake pipe 4 are in the same horizontal plane, and the distance between the two fixing blocks 5 is equal to the outer diameter of the air intake pipe 4. When installing the air intake pipe 4, the air intake pipe 4 can be directly embedded in the gap between the two fixing blocks 5, which simplifies the installation process and improves the stability and safety of the air intake pipe installation.
[0037] The fixing block 5 has a certain volume to ensure that the fixing block 5 can bear the weight of the air intake pipeline 4 and prevent the air intake pipeline 4 from being skewed. At the same time, the volume of the fixing block 5 should not be set too large to avoid affecting the air flow direction and gas distribution inside the reaction chamber 1. Generally, the length of the fixing block 5 is set to 2 mm, the width is set to 2 mm, and the thickness is set to half of the outer diameter of the air intake pipeline 4.
[0038] The fixing block 5 is integrally formed with the reaction chamber 1. The material of the fixing block 5 is also quartz, so as to withstand the high temperature during the chemical vapor deposition process without being easily thermally deformed, ensuring that it can always stably clamp the air intake pipe 4, so that the air intake pipe 4 is in a vertical state, and avoids collision and friction between the air intake pipe 4 and the inner wall of the reaction chamber, thereby avoiding the generation of solid particles.
[0039] The present invention installs and fixes the air intake pipeline by adding a fixing device, so that the air intake pipeline remains in a vertical state, ensuring that the air intake pipeline will not be skewed, and will not collide and rub against the inner wall of the reaction chamber due to shaking, thereby avoiding the generation of solid particles, simplifying the installation process, improving the stability of the air intake pipeline and the safety of the substrate in the reaction chamber, ensuring the stable operation of the semiconductor equipment, improving the equipment operation efficiency, and increasing the output.
[0040] It should be noted that, in the embodiments of the present invention, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.
[0041] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0042] It should be understood that when used in this specification and the appended claims, the term "comprising" indicates the presence of described features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.
[0043] It should also be understood that the terms used in this application specification are only for the purpose of describing specific embodiments and are not intended to limit the application. As used in this application specification and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.
[0044] It should be further understood that the term “and / or” used in the specification and appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.
[0045] As used in this specification and the appended claims, the term "if" may be interpreted as "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrases "if it is determined" or "if [described condition or event] is detected" may be interpreted as meaning "upon determination" or "in response to determining" or "upon detection of [described condition or event]" or "in response to detecting [described condition or event]," depending on the context.
[0046] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as limiting the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present invention. After reading the above content, it will be obvious for those skilled in the art to make various modifications and substitutions to the present invention. Therefore, the scope of protection of the present invention should be defined by the attached claims.
Claims
1. A semiconductor processing device, characterized in that: Include: Reaction chamber; A wafer boat is arranged in the reaction chamber, and the wafer boat carries a plurality of substrates arranged in a vertical direction; An air intake pipeline extending vertically from the bottom of the reaction chamber to the top of the reaction chamber; The fixing device comprises at least two fixing blocks, the fixing blocks are arranged on the inner wall of the reaction chamber, the fixing blocks are respectively located on both sides of the air intake pipeline, and the fixing blocks are tightly fitted with the air intake pipeline.
2. The semiconductor processing equipment according to claim 1, wherein: The air inlet end of the air inlet pipeline is connected to an external gas source, the air outlet end of the air inlet pipeline is in a U-shaped structure, and an air outlet is arranged at the end of the air outlet end.
3. The semiconductor processing equipment according to claim 2 or 3, characterized in that: The fixing block and the reaction chamber are integrally formed, and the reaction chamber and the fixing block are both made of quartz.
4. The semiconductor processing equipment according to claim 3, characterized in that The fixing blocks located on both sides of the air intake pipeline are in the same horizontal plane, and the distance between the two fixing blocks is equal to the outer diameter of the air intake pipeline.
5. The semiconductor processing equipment according to claim 4, characterized in that The length of the fixing block is set to 2 mm, the width is set to 2 mm, and the thickness is set to half of the outer diameter of the air intake pipeline.
6. The semiconductor processing equipment according to claim 2, wherein: The material of the air intake pipeline is quartz.
7. A gas delivery system for semiconductor processing equipment, wherein a wafer boat is arranged in a reaction chamber of the semiconductor processing equipment, and a plurality of substrates arranged in a vertical direction are carried on the wafer boat, characterized in that: The gas delivery system comprises: An air intake pipeline extending vertically from the bottom of the reaction chamber to the top of the reaction chamber; an external gas source connected to the gas inlet end of the gas inlet pipeline; The fixing device comprises at least two fixing blocks, the fixing blocks are arranged on the inner wall of the reaction chamber, the fixing blocks are respectively located on both sides of the air intake pipeline, and the fixing blocks are tightly fitted with the air intake pipeline.
8. The gas delivery system according to claim 7, characterized in that The air outlet end of the air inlet pipeline is in a U-shaped structure, and an air outlet is arranged at the end of the air outlet end.
9. The gas delivery system according to claim 7 or 8, characterized in that: The fixing block and the reaction chamber are integrally formed, and the reaction chamber and the fixing block are both made of quartz.
10. The gas delivery system according to claim 9, characterized in that The fixing blocks located on both sides of the air intake pipeline are in the same horizontal plane, and the distance between the two fixing blocks is equal to the outer diameter of the air intake pipeline.
11. The gas delivery system of claim 10, wherein: The length of the fixing block is set to 2 mm, the width is set to 2 mm, and the thickness is set to half of the outer diameter of the air intake pipeline.
12. The gas delivery system of claim 8, wherein: The material of the air intake pipeline is quartz.