Method, device, electronic equipment and medium for controlling stable growth of semiconductor material

Abstract

The present invention provides a method, device, electronic device and medium for controlling the stable growth of semiconductor materials, the method comprising: (1) adjusting the temperature of the source furnace used in the material growth process in combination with the X-ray diffraction results of the fore furnace material, the photoluminescence test results and the source furnace beam change value; (2) adjusting the deoxidation temperature of the substrate and the growth temperature of the epitaxial layer in combination with the temperature points where specific structures appear and disappear in the reflected high-energy electron diffraction image; (3) adjusting the valve position difference of the V-group beam in combination with the V-group beam difference in the beam test and the vacuum difference in the growth chamber during the growth process; wherein steps (1)-(3) are not in any particular order. The method provided by the present invention realizes the stable growth of large-scale semiconductor materials and maintains the consistency of the materials by controlling various key parameters in the growth process and adjusting them in combination with relevant parameters, thereby simplifying the process flow, reducing the difficulty of operation and facilitating large-scale promotion and application.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor optoelectronic devices, and relates to a method for controlling the stable growth of semiconductor materials, and in particular to a method, device, electronic equipment and medium for controlling the stable growth of semiconductor materials. Background Art

[0002] The application range of near-infrared band is relatively wide. For example, quartz optical fiber is in the low loss and low dispersion windows at 1.31μm and 1.55μm respectively. Lasers and detectors of the above two wavelengths are widely used in long-wave optical fiber communications. InGaAs detectors, in particular, are widely used in optical fiber communication systems due to their good performance and play an important role in the current information age.

[0003] InP-based InGaAs materials have high absorption coefficient, high mobility, good physical and chemical stability and radiation resistance. The detectors made of them show advantages such as high operating temperature, high quantum efficiency, high sensitivity and good radiation resistance, and are an important choice for short-wave infrared detectors. InGaAs short-wave infrared detectors also have great potential and broad application prospects in aerospace remote sensing, such as resource surveys, atmospheric composition analysis and deep space exploration.

[0004] In general, the development of InGaAs detectors can be divided into two main directions: one is to improve device performance and increase the size of the focal plane; the other is to develop a wider detection spectrum, expanding the short-wave direction to the visible light range and the long-wave direction towards 3μm wavelength.

[0005] In recent years, many countries have made great efforts to improve the scale and performance of near-infrared InGaAs detector focal plane arrays, and most companies have the ability to produce large arrays. However, how to achieve stable growth of large-scale semiconductor materials and maintain the consistency of materials, while simplifying the process and reducing the difficulty of operation has become an urgent problem that technicians in this field need to solve. Summary of the invention

[0006] The purpose of the present invention is to provide a method, device, electronic device and medium for controlling the stable growth of semiconductor materials. By controlling various key parameters in the growth process and adjusting them in combination with related parameters, the stable growth of large-scale semiconductor materials can be achieved and the consistency of the materials can be maintained, which simplifies the process flow, reduces the difficulty of operation, and is conducive to large-scale promotion and application.

[0007] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a method for controlling the stable growth of a semiconductor material, the method comprising any one of the following steps or a combination of at least two of the following steps:

[0009] (1) Based on the X-ray diffraction (XRD) results of the fore furnace material, the photoluminescence test (PL) results and the source furnace beam current change value, the source furnace temperature used in the material growth process is adjusted;

[0010] (2) Based on the temperature points where specific structures appear and disappear in the reflection high-energy electron diffraction (RHEED) image, the deoxidation temperature of the substrate and the growth temperature of the epitaxial layer are adjusted respectively;

[0011] (3) The valve position difference of the Group V beam is adjusted based on the difference in Group V beam current during the beam test and the difference in vacuum in the growth chamber during the growth process.

[0012] Among them, steps (1)-(3) are performed in no particular order.

[0013] The method provided by the present invention achieves stable growth of large-scale semiconductor materials and maintains the consistency of materials by controlling various key parameters in the growth process and adjusting them in combination with related parameters. It has strong universality, simplifies the process flow, reduces the difficulty of operation, and is conducive to large-scale promotion and application.

[0014] Preferably, the semiconductor material includes any one of InGaAs material, AlGaAs material or InGaSb material, and is more preferably InGaAs material.

[0015] Preferably, the fore furnace material in step (1) includes the previous furnace material.

[0016] Preferably, the X-ray diffraction result in step (1) includes the mismatch between the InAlAs peak and the InGaAs peak.

[0017] Preferably, the photoluminescence test result in step (1) includes a photoluminescence test wavelength.

[0018] Preferably, the source furnace beam current change value in step (1) includes an In source furnace beam current reduction value.

[0019] Preferably, the source furnace temperature in step (1) is adjusted according to the following formula:

[0020] ΔT In =(A1-P1) / a 1+ ΔF1 / a2;

[0021] ΔT Al =X1 / a3;

[0022] In the above formula, ΔT Inis the In source furnace temperature adjustment value; A1 is the material target wavelength, and 1.68≤A1≤2.60; P1 is the photoluminescence test wavelength; ΔF1 is the In source furnace beam reduction value; ΔT Al is the temperature adjustment value of the Al source furnace; X1 is the mismatch between the InAlAs peak and the InGaAs peak; a1, a2 and a3 are all wavelength-related values ​​of the growth material, and 0.01≤a1≤0.05, 0<a2≤2×10 -8 , 100≤a3≤600.

[0023] In the present invention, 1.68≤A1≤2.60, for example, A1=1.68, 1.70, 1.80, 1.90, 2.00, 2.10, 2.20, 2.30, 2.40, 2.50 or 2.60; 0.01≤a1≤0.05, for example, a1=0.01, 0.02, 0.03, 0.04 or 0.05; 0<a2≤2×10 -8 , for example, it can be a2=1×10 -10 , 5×10 -10 , 1×10 -9 , 5×10 -9 , 1×10 -8 or 2×10 -8 ; 100≤a3≤600, for example, a3=100, 200, 300, 400, 500 or 600, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0024] Preferably, the specific structure in the reflected high-energy electron diffraction image in step (2) includes a 2×4 reconstruction.

[0025] Preferably, step (2) specifically includes the following steps:

[0026] (2.1) During the substrate heating process, the substrate deoxidation temperature is adjusted based on the temperature points that appear in the 2×4 reconstruction in the reflected high-energy electron diffraction image;

[0027] (2.2) During the substrate cooling process, the growth temperature of the epitaxial layer is adjusted based on the temperature point where the 2×4 reconstruction disappears in the reflected high-energy electron diffraction image.

[0028] Preferably, the deoxygenation temperature in step (2.1) is adjusted according to the following formula:

[0029] T 1-1 =A(T1-T a )+T b ;

[0030] In the above formula, T 1-1is the deoxidation temperature of the substrate; T1 is the temperature point where the 2×4 reconstruction appears in the reflected high-energy electron diffraction image; A, T a and T b All are type-dependent values ​​of the substrate material, and 0<A≤1, 450≤T a ≤650, T a ≤T b ≤780.

[0031] In the present invention, 0<A≤1, for example, A=0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1; 450≤T a ≤650, for example, it can be T a =450, 500, 550, 600 or 650; T a ≤T b ≤780, for example, it can be T b =660, 680, 700, 720, 740, 760 or 780, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0032] Preferably, the growth temperature in step (2.2) is adjusted according to the following formula:

[0033] T 2-1 =B(T2-T c )+T d ;

[0034] In the above formula, T 2-1 is the growth temperature of the epitaxial layer; T2 is the temperature point at which the 2×4 reconstruction disappears in the reflected high-energy electron diffraction image; B, T c and T d All are type-dependent values ​​of the substrate material, and 0<B≤1, 450≤T c ≤T a , T c -50≤T d ≤T c +50.

[0035] In the present invention, 0<B≤1, for example, B=0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1; 450≤T c ≤T a , for example, it can be T c =450, 460, 470, 480, 490 or 500; T c -50≤T d ≤T c +50, for example, it can be T d =T c -50, Tc -40, T c -30, T c -20, T c -10, T c 、T c +10, T c +20, T c +30, T c +40 or T c +50, but is not limited to the values ​​listed, other values ​​not listed within the range also apply.

[0036] Preferably, the adjustment of the valve position difference in step (3) is performed according to the following formula:

[0037] ΔV=(ΔG+ΔF) / C×100%;

[0038] In the above formula, ΔV is the valve position difference of the V-group beam; ΔG is the vacuum difference in the growth chamber during the growth process; ΔF is the V-group beam difference in the beam test; C is a conventional coefficient, and 0<C≤1, for example, C=0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0039] In a second aspect, the present invention provides a device for controlling the stable growth of semiconductor materials, the device comprising any one or a combination of at least two of the following modules:

[0040] The source furnace temperature adjustment module is used to adjust the source furnace temperature used in the material growth process in combination with the X-ray diffraction results of the fore furnace material, the photoluminescence test results and the source furnace beam change value.

[0041] The deoxidation temperature adjustment module is used to adjust the deoxidation temperature of the substrate in the process of heating up the substrate, combining the temperature points appearing in the 2×4 reconstruction in the reflected high-energy electron diffraction image.

[0042] The growth temperature adjustment module is used to adjust the growth temperature of the epitaxial layer in the process of cooling the substrate in combination with the temperature point where the 2×4 reconstruction disappears in the reflected high-energy electron diffraction image.

[0043] The valve position difference adjustment module is used to adjust the valve position difference of the V-group beam in combination with the V-group beam difference in the beam test and the vacuum difference in the growth chamber during the growth process.

[0044] In a third aspect, the present invention provides an electronic device, the electronic device comprising:

[0045] At least one processor and a memory communicatively coupled to the at least one processor.

[0046] Wherein, the memory stores a computer program that can be executed by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the method for controlling the stable growth of semiconductor materials described in the first aspect.

[0047] In a fourth aspect, the present invention provides a computer-readable storage medium storing computer instructions, wherein the computer instructions are used to enable a processor to implement the method for controlling the stable growth of semiconductor materials described in the first aspect when executed.

[0048] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0049] Compared with the prior art, the present invention has the following beneficial effects:

[0050] The method provided by the present invention achieves stable growth of large-scale semiconductor materials and maintains the consistency of materials by controlling various key parameters in the growth process and adjusting them in combination with related parameters. It has strong universality, simplifies the process flow, reduces the difficulty of operation, and is conducive to large-scale promotion and application. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 It is a schematic flow chart of a method for controlling the stable growth of semiconductor materials provided by the present invention;

[0052] Figure 2 This is a graph of XRD test results in the method provided in Example 1;

[0053] Figure 3 is a graph of PL test results in the method provided in Example 1;

[0054] Figure 4 is the RHEED image in the method provided in Example 1;

[0055] Figure 5 This is a graph of XRD test results in the method provided in Example 2;

[0056] Figure 6 This is a graph of PL test results in the method provided in Example 2;

[0057] Figure 7 This is a graph of XRD test results in the method provided in Example 3;

[0058] Figure 8 is a graph of PL test results in the method provided in Example 3;

[0059] Fig. 9 is a schematic diagram of the structure of a device for controlling the stable growth of semiconductor materials provided in Example 4;

[0060] Fig.10 It is a schematic diagram of the structure of an electronic device provided in Example 5 for implementing the method for controlling the stable growth of semiconductor materials. DETAILED DESCRIPTION

[0061] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0062] Example 1

[0063] This embodiment provides a method for controlling the stable growth of InGaAs materials, especially for detector materials with an extended wavelength of 1.7 μm, such as Figure 1 As shown, the method comprises the following steps:

[0064] (1) Combined with the XRD test results of the previous batch of materials, the mismatch between the InAlAs peak and the InGaAs peak is -522ppm (see Figure 2 ), the PL test wavelength is 1.71μm (see Figure 3 ), the beam current reduction value of In source furnace is 2.5×10 -9 Torr, the source furnace temperature used in the material growth process is adjusted according to the following formula:

[0065] ΔT In =(A1-P1) / a 1+ ΔF1 / a2=(1.7-1.71) / 0.035+(2.5×10 -9 ) / (5×10 -9 ) = 0.2℃;

[0066] ΔT Al =X1 / a3=-522 / 500=-1℃;

[0067] Note: ΔT In and ΔT Al Take 1 decimal place for each.

[0068] That is to say, when the material is growing, the temperature of the In source furnace needs to be increased by 0.2°C and the temperature of the Al source furnace needs to be reduced by 1°C.

[0069] In the above formula, ΔT In is the In source furnace temperature adjustment value; A1 is the material target wavelength, and A1=1.7μm; P1 is the PL test wavelength; ΔF1 is the In source furnace beam reduction value; ΔT Alis the temperature adjustment value of the Al source furnace; X1 is the mismatch between the InAlAs peak and the InGaAs peak; a1, a2 and a3 are all wavelength-related values ​​of the growth material, and a1=0.035, a2=5×10 -9 , a3=500.

[0070] (2) During the heating process of the semi-insulating InP substrate, combined with the RHEED image (see Figure 4 ) The temperature point where 2×4 reconstruction occurs is 570°C, and the deoxidation temperature of the substrate is adjusted according to the following formula:

[0071] T 1-1 =A(T1-T a )+T b =0.5×(570-580)+650=645℃;

[0072] That is to say, the deoxidation temperature of the substrate needs to be set to 645°C.

[0073] In the above formula, T 1-1 is the deoxidation temperature of the substrate; T1 is the temperature point that appears in the 2×4 reconstruction in the RHEED image; A, T a and T b are all type-dependent values ​​of the substrate material, and A=0.5, T a =580, T b =650.

[0074] (3) During the cooling process of the semi-insulating InP substrate, combined with the RHEED image (see Figure 4 ) The temperature point where the 2×4 reconstruction disappears is 530°C, and the growth temperature of the epitaxial layer is adjusted according to the following formula:

[0075] T 2-1 =B(T2-T c )+T d =0.75×(530-550)+550=535℃;

[0076] That is to say, the growth temperature of the epitaxial layer needs to be set to 535°C.

[0077] In the above formula, T 2-1 is the growth temperature of the epitaxial layer; T2 is the temperature point where the 2×4 reconstruction disappears in the RHEED image; B, T c and T d are all type-dependent values ​​of the substrate material, and B = 0.75, T c =T d =550.

[0078] (4) The V-group beam difference in the beam test is 0 Torr, and the vacuum difference in the growth chamber during the growth process is 1×10-8 Torr, adjust the valve position difference of the V-group beam according to the following formula:

[0079] ΔV=(ΔG+ΔF) / C=(1×10 -8 ) / (1.4×10 -7 )×100%=7.1%;

[0080] This means that the valve position difference of the Group V beam needs to be set to 7.1%.

[0081] In the above formula, ΔV is the valve position difference of the V-group beam; ΔG is the vacuum difference of the growth chamber during the growth process; ΔF is the V-group beam difference in the beam test; C is the conventional coefficient, and C=1.4×10 -7 .

[0082] The above key parameters were adjusted accordingly using the method provided in this embodiment. The results showed that the InGaAs material was stable throughout the growth process. The average diameter of the final product could reach 10 cm, the thickness was 4 μm, and the thickness error at each location did not exceed 5%.

[0083] Example 2

[0084] This embodiment provides a method for controlling the stable growth of InGaAs materials, especially for detector materials with an extended wavelength of 2.2 μm, such as Figure 1 As shown, the method comprises the following steps:

[0085] (1) Combined with the XRD test results of the previous batch of materials, the mismatch between the InAlAs peak and the InGaAs peak is +719ppm (see Figure 5 ), PL test wavelength is 2.25μm (see Figure 6 ), the beam current reduction value of In source furnace is 2×10 -9 Torr, the source furnace temperature used in the material growth process is adjusted according to the following formula:

[0086] ΔT In =(A1-P1) / a 1+ ΔF1 / a2=(2.2-2.25) / 0.014+(2×10 -9 ) / (8×10 -9 ) = -3.3℃;

[0087] ΔT Al =X1 / a3=719 / 250=2.9℃;

[0088] Note: ΔT In and ΔT Al Take 1 decimal place for each.

[0089] That is to say, when the material is growing, the temperature of the In source furnace needs to be lowered by 3.3°C and the temperature of the Al source furnace needs to be increased by 2.9°C.

[0090] In the above formula, ΔT In is the In source furnace temperature adjustment value; A1 is the material target wavelength, and A1=2.2μm; P1 is the PL test wavelength; ΔF1 is the In source furnace beam reduction value; ΔT Al is the temperature adjustment value of the Al source furnace; X1 is the mismatch between the InAlAs peak and the InGaAs peak; a1, a2 and a3 are all wavelength-related values ​​of the growth material, and a1=0.014, a2=8×10 -9 , a3=250.

[0091] (2) During the heating process of the N-type InP substrate, combined with the RHEED image (similar to Figure 4 ) The temperature point where 2×4 reconstruction occurs is 595°C. The deoxidation temperature of the substrate is adjusted according to the following formula:

[0092] T 1-1 =A(T1-T a )+T b =0.5×(595-600)+620=617.5℃;

[0093] That is to say, the deoxidation temperature of the substrate needs to be set to 617.5°C.

[0094] In the above formula, T 1-1 is the deoxidation temperature of the substrate; T1 is the temperature point that appears in the 2×4 reconstruction in the RHEED image; A, T a and T b are all type-dependent values ​​of the substrate material, and A=0.5, T a =600, T b =620.

[0095] (3) During the cooling process of the N-type InP substrate, combined with the RHEED image (similar to Figure 4 ) The temperature point where the 2×4 reconstruction disappears is 510°C, and the growth temperature of the epitaxial layer is adjusted according to the following formula:

[0096] T 2-1 =B(T2-T c )+T d =0.3×(510-520)+520=517℃;

[0097] That is to say, the growth temperature of the epitaxial layer needs to be set to 517°C.

[0098] In the above formula, T 2-1is the growth temperature of the epitaxial layer; T2 is the temperature point where the 2×4 reconstruction disappears in the RHEED image; B, T c and T d are all type-dependent values ​​of the substrate material, and B = 0.3, T c =T d =520.

[0099] (4) The V-group beam difference in the beam test is 0 Torr, and the vacuum difference in the growth chamber during the growth process is 5×10 -9 Torr, adjust the valve position difference of the V-group beam according to the following formula:

[0100] ΔV=(ΔG+ΔF) / C=(5×10 -9 ) / (1.4×10 -7 )×100%=3.6%;

[0101] This means that the valve position difference of the Group V beam needs to be set to 3.6%.

[0102] In the above formula, ΔV is the valve position difference of the V-group beam; ΔG is the vacuum difference of the growth chamber during the growth process; ΔF is the V-group beam difference in the beam test; C is the conventional coefficient, and C=1.4×10 -7 .

[0103] The above key parameters were adjusted accordingly using the method provided in this embodiment. The results showed that the InGaAs material was stable throughout the growth process. The average diameter of the final product could reach 7 cm, the thickness was 5 μm, and the thickness error at each location did not exceed 4%.

[0104] Example 3

[0105] This embodiment provides a method for controlling the stable growth of InGaAs materials, especially for detector materials with an extended wavelength of 2.6 μm, such as Figure 1 As shown, the method comprises the following steps:

[0106] (1) Combined with the XRD test results of the previous batch of materials, the mismatch between the InAlAs peak and the InGaAs peak is +386ppm (see Figure 7 ), the PL test wavelength is 2.58μm (see Figure 8 ), the beam current reduction value of In source furnace is 1.5×10 -9 Torr, the source furnace temperature used in the material growth process is adjusted according to the following formula:

[0107] ΔT In =(A1-P1) / a 1+ ΔF1 / a2=(2.6-2.58) / 0.012+(1.5×10 -9) / (1×10 -8 ) = 1.8 °C;

[0108] ΔT Al =X1 / a3=386 / 200=1.9℃;

[0109] Note: ΔT In and ΔT Al Take 1 decimal place for each.

[0110] That is to say, when the material is growing, the temperature of the In source furnace needs to be increased by 1.8°C and the temperature of the Al source furnace needs to be increased by 1.9°C.

[0111] In the above formula, ΔT In is the In source furnace temperature adjustment value; A1 is the material target wavelength, and A1=2.6μm; P1 is the PL test wavelength; ΔF1 is the In source furnace beam reduction value; ΔT Al is the temperature adjustment value of the Al source furnace; X1 is the mismatch between the InAlAs peak and the InGaAs peak; a1, a2 and a3 are all wavelength-related values ​​of the growth material, and a1=0.012, a2=1×10 -8 , a3=200.

[0112] (2) During the heating process of the N-type InP substrate, combined with the RHEED image (similar to Figure 4 ) The temperature point where 2×4 reconstruction occurs is 590°C, and the deoxidation temperature of the substrate is adjusted according to the following formula:

[0113] T 1-1 =A(T1-T a )+T b =0.5×(590-600)+620=615℃;

[0114] That is to say, the deoxidation temperature of the substrate needs to be set to 615°C.

[0115] In the above formula, T 1-1 is the deoxidation temperature of the substrate; T1 is the temperature point that appears in the 2×4 reconstruction in the RHEED image; A, T a and T b are all type-dependent values ​​of the substrate material, and A=0.5, T a =600, T b =620.

[0116] (3) During the cooling process of the N-type InP substrate, combined with the RHEED image (similar to Figure 4 ) The temperature point where the 2×4 reconstruction disappears is 515°C, and the growth temperature of the epitaxial layer is adjusted according to the following formula:

[0117] T 2-1=B(T2-T c )+T d =0.3×(515-520)+520=518.5℃;

[0118] That is to say, the growth temperature of the epitaxial layer needs to be set to 518.5°C.

[0119] In the above formula, T 2-1 is the growth temperature of the epitaxial layer; T2 is the temperature point where the 2×4 reconstruction disappears in the RHEED image; B, T c and T d are all type-dependent values ​​of the substrate material, and B = 0.3, T c =T d =520.

[0120] (4) The beam current difference of the V group in the combined beam test is 5×10 -9 Torr, the vacuum difference in the growth chamber during the growth process was 5×10 -9 Torr, adjust the valve position difference of the V-group beam according to the following formula:

[0121] ΔV=(ΔG+ΔF) / C=(5×10 -9 +5×10 -9 ) / (1.4×10 -7 )×100%=7.1%;

[0122] This means that the valve position difference of the Group V beam needs to be set to 7.1%.

[0123] In the above formula, ΔV is the valve position difference of the V-group beam; ΔG is the vacuum difference of the growth chamber during the growth process; ΔF is the V-group beam difference in the beam test; C is the conventional coefficient, and C=1.4×10 -7 .

[0124] The above key parameters were adjusted accordingly using the method provided in this embodiment. The results showed that the InGaAs material was stable throughout the growth process. The average diameter of the final product was 5 cm and the thickness was 5.5 μm. The thickness error at each location did not exceed 3%.

[0125] Example 4

[0126] This embodiment provides a device for controlling the stable growth of semiconductor materials, such as Fig. 9 As shown, the device comprises: a source furnace temperature adjustment module 201, a deoxidation temperature adjustment module 202, a growth temperature adjustment module 203 and a valve position difference adjustment module 204. Among them:

[0127] The source furnace temperature adjustment module 201 is used to adjust the source furnace temperature used in the material growth process in combination with the X-ray diffraction results of the fore furnace material, the photoluminescence test results and the source furnace beam change value.

[0128] The deoxidation temperature adjustment module 202 is used to adjust the deoxidation temperature of the substrate in combination with the temperature points appearing in the 2×4 reconstruction in the reflected high-energy electron diffraction image during the substrate heating process.

[0129] The growth temperature adjustment module 203 is used to adjust the growth temperature of the epitaxial layer in the process of cooling the substrate in combination with the temperature point where the 2×4 reconstruction disappears in the reflected high-energy electron diffraction image.

[0130] The valve position difference adjustment module 204 is used to adjust the valve position difference of the group V beam in combination with the group V beam difference in the beam test and the vacuum difference in the growth chamber during the growth process.

[0131] In the source furnace temperature adjustment module 201, the fore furnace material includes the previous furnace material, the X-ray diffraction result includes the mismatch between the InAlAs peak and the InGaAs peak, the photoluminescence test result includes the photoluminescence test wavelength, the source furnace beam current change value includes the In source furnace beam current reduction value, and the source furnace temperature is adjusted according to the following formula:

[0132] ΔT In =(A1-P1) / a 1+ ΔF1 / a2;

[0133] ΔT Al =X1 / a3;

[0134] In the above formula, ΔT In is the In source furnace temperature adjustment value; A1 is the material target wavelength, and 1.68≤A1≤2.60; P1 is the photoluminescence test wavelength; ΔF1 is the In source furnace beam reduction value; ΔT Al is the temperature adjustment value of the Al source furnace; X1 is the mismatch between the InAlAs peak and the InGaAs peak; a1, a2 and a3 are all wavelength-related values ​​of the growth material, and 0.01≤a1≤0.05, 0<a2≤2×10 -8 , 100≤a3≤600.

[0135] In the deoxidation temperature adjustment module 202, the deoxidation temperature is adjusted according to the following formula:

[0136] T 1-1 =A(T1-T a )+T b ;

[0137] In the above formula, T 1-1is the deoxidation temperature of the substrate; T1 is the temperature point where the 2×4 reconstruction appears in the reflected high-energy electron diffraction image; A, T a and T b All are type-dependent values ​​of the substrate material, and 0<A≤1, 450≤T a ≤650, T a ≤T b ≤780.

[0138] In the growth temperature adjustment module 203, the growth temperature is adjusted according to the following formula:

[0139] T 2-1 =B(T2-T c )+T d ;

[0140] In the above formula, T 2-1 is the growth temperature of the epitaxial layer; T2 is the temperature point at which the 2×4 reconstruction disappears in the reflected high-energy electron diffraction image; B, T c and T d All are type-dependent values ​​of the substrate material, and 0<B≤1, 450≤T c ≤T a , T c -50≤T d ≤T c +50.

[0141] In the valve position difference adjustment module 204, the valve position difference is adjusted according to the following formula:

[0142] ΔV=(ΔG+ΔF) / C×100%;

[0143] In the above formula, ΔV is the valve position difference of the V-group beam; ΔG is the vacuum difference of the growth chamber during the growth process; ΔF is the V-group beam difference in the beam test; C is the conventional coefficient, and 0<C≤1.

[0144] The device provided in this embodiment can execute the method for controlling the stable growth of semiconductor materials provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method.

[0145] Example 5

[0146] This embodiment provides an electronic device for implementing a method for controlling the stable growth of semiconductor materials, such as Fig.10As shown, the electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.), and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present application described and / or required herein.

[0147] like Fig.10 As shown, the electronic device 10 includes at least one processor 11, and a memory connected to the at least one processor 11, such as a read-only memory (ROM) 12, a random access memory (RAM) 13, etc., wherein the memory stores a computer program that can be executed by at least one processor, and the processor 11 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 12 or the computer program loaded from the storage unit 18 to the random access memory (RAM) 13. In the RAM 13, various programs and data required for the operation of the electronic device 10 can also be stored. The processor 11, the ROM 12, and the RAM 13 are connected to each other through a bus 14. The input / output (I / O) interface 15 is also connected to the bus 14.

[0148] A number of components in the electronic device 10 are connected to the I / O interface 15, including: an input unit 16, such as a keyboard, a mouse, etc.; an output unit 17, such as various types of displays, speakers, etc.; a storage unit 18, such as a second storage area, an optical disk, etc.; and a communication unit 19, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 19 allows the electronic device 10 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0149] The processor 11 may be a variety of general and / or dedicated processing components with processing and computing capabilities. Some examples of the processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 11 performs the various methods and processes described above, such as a method for controlling the stable growth of semiconductor materials.

[0150] In some embodiments, the method for controlling the stable growth of semiconductor materials may be implemented as a computer program, which is tangibly contained in a computer-readable storage medium, such as a storage unit 18. In some embodiments, part or all of the computer program may be loaded and / or installed on the electronic device 10 via the ROM 12 and / or the communication unit 19. When the computer program is loaded into the RAM 13 and executed by the processor 11, one or more steps of the method for controlling the stable growth of semiconductor materials described above may be performed. Alternatively, in other embodiments, the processor 11 may be configured to execute the method for controlling the stable growth of semiconductor materials in any other appropriate manner (e.g., by means of firmware).

[0151] Various implementations of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various implementations can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0152] Computer programs for implementing the methods of the present application may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable target determination device, so that when the computer program is executed by the processor, the functions / operations specified in the flow chart and / or block diagram are implemented. The computer program may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0153] In the context of the present application, a computer-readable storage medium may be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, device, or equipment. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices, or equipment, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0154] To provide interaction with a user, the systems and techniques described herein may be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or trackball) through which the user can provide input to the electronic device. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0155] The systems and techniques described herein may be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0156] A computing system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The client and server relationship is generated by computer programs running on the corresponding computers and having a client-server relationship with each other. The server may be a cloud server, also known as a cloud computing server or cloud host, which is a host product in the cloud computing service system to solve the defects of difficult management and weak business scalability in traditional physical hosts and VPS services.

[0157] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps recorded in this application can be executed in parallel, sequentially or in different orders, as long as the information expected by the technical solution of this application can be achieved, and this document is not limited here.

[0158] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for controlling the stable growth of semiconductor materials, characterized in that: The method comprises any one of the following steps or a combination of at least two of the following steps: (1) Based on the X-ray diffraction results of the fore furnace material, the photoluminescence test results and the source furnace beam change value, the source furnace temperature used in the material growth process is adjusted, and the source furnace temperature is adjusted according to the following formula: ΔT In =(A1-P1) / a 1+ ΔF1 / a2; ΔT Al =X1 / a3; In the above formula, ΔT In is the In source furnace temperature adjustment value; A1 is the material target wavelength, and 1.68≤A1≤2.60; P1 is the photoluminescence test wavelength; ΔF1 is the In source furnace beam reduction value; ΔT Al is the temperature adjustment value of the Al source furnace; X1 is the mismatch between the InAlAs peak and the InGaAs peak; a1, a2 and a3 are all wavelength-related values ​​of the growth material, and 0.01≤a1≤0.05, 0<a2≤2×10 -8 , 100≤a3≤600; (2) Based on the temperature points where the 2×4 reconstruction appears and disappears in the reflected high-energy electron diffraction image, the deoxidation temperature of the substrate and the growth temperature of the epitaxial layer are adjusted respectively, which specifically includes the following steps: (2.1) During the substrate heating process, the substrate deoxidation temperature is adjusted based on the temperature points that appear in the 2×4 reconstruction in the reflected high-energy electron diffraction image; The deoxidation temperature is adjusted according to the following formula: T 1-1 =A(T1-T a )+T b ; In the above formula, T 1-1 is the deoxidation temperature of the substrate; T1 is the temperature point where the 2×4 reconstruction appears in the reflected high-energy electron diffraction image; A, T a and T b All are type-dependent values ​​of the substrate material, and 0<A≤1, 450≤T a ≤650, T a ≤T b ≤780; (2.2) During the substrate cooling process, the growth temperature of the epitaxial layer is adjusted based on the temperature point where the 2×4 reconstruction disappears in the reflected high-energy electron diffraction image; (3) The valve position difference of the V-group beam is adjusted based on the V-group beam difference in the beam test and the vacuum difference in the growth chamber during the growth process. The adjustment of the valve position difference is performed according to the following formula: ΔV=(ΔG+ΔF) / C×100%; In the above formula, ΔV is the valve position difference of the V-group beam; ΔG is the vacuum difference of the growth chamber during the growth process; ΔF is the V-group beam difference in the beam test; C is the conventional coefficient, and 0<C≤1; Among them, steps (1)-(3) are performed in no particular order.

2. The method according to claim 1, characterized in that The semiconductor material includes any one of InGaAs material, AlGaAs material or InGaSb material.

3. The method according to claim 2, characterized in that The fore furnace material in step (1) includes the previous furnace material; The X-ray diffraction result of step (1) includes the mismatch between the InAlAs peak and the InGaAs peak; The photoluminescence test result of step (1) includes the photoluminescence test wavelength; The source furnace beam current change value in step (1) includes the In source furnace beam current reduction value.

4. The method according to claim 3, characterized in that The growth temperature in step (2.2) is adjusted according to the following formula: T 2-1 =B(T2-T c )+T d ; In the above formula, T 2-1 is the growth temperature of the epitaxial layer; T2 is the temperature point at which the 2×4 reconstruction disappears in the reflected high-energy electron diffraction image; B, T c and T d All are type-dependent values ​​of the substrate material, and 0<B≤1, 450≤T c ≤T a , T c -50≤T d ≤T c +50.

5. An electronic device, characterized in that: The electronic device comprises: at least one processor and a memory communicatively coupled to the at least one processor; The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the method for controlling the stable growth of semiconductor materials as described in any one of claims 1-4.

6. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the method for controlling the stable growth of semiconductor materials as described in any one of claims 1 to 4 when executed.

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