Photomask defect inspection method
By cutting the single-chip version of the photocoat, dividing it into independent Dies, and performing defect inspections separately, the problem of long data transfer time of the photocoat version of the photocoat is solved, and the efficiency of photocoat defect inspection is improved.
Patent Information
- Application Number
- CN202411367166.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-27
- Publication Date
- 2024-12-27
AI Technical Summary
During the data processing process of single-chip version, the defect inspection time is long, resulting in low defect inspection efficiency.
By performing cutting channel processing on a single chip, it is divided into several independent Dies, and each Die is inspected separately. The Die to Database inspection method is used to shorten the data transfer time.
It improves the efficiency of photocoat defect inspection, shortens data transfer time, and improves inspection speed.
Smart Images
Figure CN119200324A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, and in particular to a mask defect inspection method. Background Art
[0002] The photomask is a carrier for image transmission. The designed circuit pattern is exposed on the photosensitive resin through an electronic laser device. The exposed area will be developed to form a circuit pattern, which becomes a mask similar to the exposed film. It is then used to project and position the integrated circuit, and the projected circuit is photoetched by the integrated circuit lithography machine. However, various defects will inevitably form in the photomask during the production process, which will affect the formation of the circuit pattern. Therefore, an inspection machine is required to perform post-process defect inspection on the photomask.
[0003] The post-process inspection types of masks mainly include Die to Die (DD), Die to Database (DB) and Starlight. The DD inspection method determines whether there are defects in the mask pattern by comparing the graphic differences between the two Dies on the mask; the DB inspection method only needs to measure one Die on the mask, and compare the Die graphic with the graphic in the database, looking for differences to determine whether there are defects in the mask pattern; the Starlight inspection method is to perform light transmission and reflection detection on the mask, for example, Starlight detection equipment can be used for detailed detection.
[0004] At present, masks include conventional masks, single chip masks, mpw (multi-project) masks, and mlm (multi-layer integration) masks. The single chip mask refers to the technology that integrates the functions originally implemented by several chips into one chip, which is equivalent to having multiple sub-chips in a single chip. There are multiple single chips on the single chip mask. During the data processing of multiple single chips and the DB inspection process, there is a problem of long transfer time when performing DB inspection in the post-mask defect inspection of a single chip, resulting in low defect inspection efficiency. Summary of the invention
[0005] The object of the present invention is to provide a method for inspecting photomask defects, which shortens the data transfer time and improves the efficiency of inspecting photomask defects.
[0006] In order to achieve the above object, the present invention provides a mask defect inspection method, comprising:
[0007] Providing a photomask, wherein the photomask has a plurality of single chips, wherein the single chip includes a plurality of dies;
[0008] Performing a dicing process on the single chip to divide the single chip into a plurality of independent dies;
[0009] Defect inspection is performed on each independent Die respectively to complete defect inspection of the single chip on the mask.
[0010] Optionally, the photomask is a single-chip photomask.
[0011] Optionally, the number of Dies on the single chip is at least one.
[0012] Optionally, a plurality of the Dies are arranged in an array.
[0013] Optionally, there is a gap between two adjacent Dies.
[0014] Optionally, a portion of the cutting line during the cutting line processing is located in a gap between two adjacent dies.
[0015] Optionally, the defect inspection is a Die to Database inspection method.
[0016] Optionally, the steps of performing defect inspection on each independent Die include:
[0017] Collect and obtain the graphics of each independent Die;
[0018] Convert the collected graphics of each independent Die into data;
[0019] The graphics of each independent Die after data conversion are compared with the graphics stored in the database to identify the differences between the graphics of each independent Die and the graphics stored in the database.
[0020] Optionally, a mask defect scanner is used to scan and collect the graphics of each independent Die.
[0021] Optionally, graphics of all Dies on the single chip are stored in the database.
[0022] The photomask defect inspection method provided by the present invention includes: providing a photomask, on which there are multiple single chips, each of which includes several dies; performing a cutting path process on the single chip to divide the single chip into several independent dies; and performing defect inspection on each independent die respectively to complete the defect inspection of the single chip on the photomask. In the present invention, the original single chip does not have a cutting path. When performing defect inspection on the single chip, it is necessary to synchronously transfer data of all dies in the single chip, which will cause a long data transfer time. The present invention performs a cutting path process on the single chip to divide the single chip into several independent dies, and performs defect inspection on each independent die respectively. The data transfer time of each independent die is short, and the data transfer time of the entire single chip is shorter than the data transfer time of all dies in the single chip synchronously, thereby shortening the data transfer time and improving the efficiency of the photomask defect inspection. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 A flowchart of a mask defect inspection method provided by one embodiment of the present invention.
[0024] Figure 2 A schematic diagram of a single chip in a mask defect inspection method provided by an embodiment of the present invention.
[0025] Figure 3 A schematic diagram of performing a scribe line process in a mask defect inspection method provided by an embodiment of the present invention.
[0026] Wherein, the accompanying drawings are marked as follows:
[0027] 10-mask; 20-single chip; 30-die; 40-cutting line. DETAILED DESCRIPTION
[0028] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. The drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the drawings is often part of the actual structure; in particular, the emphasis of each drawing is different, and sometimes different scales are used.
[0029] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.
[0030] In the description of the present application, it should be understood that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the product of the application is conventionally placed when in use, or are the orientations or positional relationships conventionally understood by those skilled in the art. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0031] In addition, relational terms such as the terms "first" and "second" are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such articles or equipment. In the absence of further restrictions, the elements defined by the statement "comprise one..." do not exclude the existence of other identical elements in the articles or equipment including the elements. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to the specific circumstances.
[0032] Figure 1 This is a flowchart of a mask defect inspection method provided in this embodiment. Please refer to Figure 1 , this embodiment provides a mask defect inspection method, comprising:
[0033] Step S1: providing a photomask, on which a plurality of single chips are provided, each single chip including a plurality of dies;
[0034] Step S2: performing a dicing process on the single chip to divide the single chip into a number of independent dies;
[0035] Step S3: Perform defect inspection on each independent Die respectively to complete the defect inspection of the single chip on the mask.
[0036] Figure 2 A schematic diagram of a single chip in a mask defect inspection method provided in this embodiment; Figure 3 A schematic diagram of performing a cutting path process in a mask defect inspection method provided in this embodiment. Figure 2 and Figure 3 A mask defect inspection method provided in this embodiment is described in detail.
[0037] Please refer to Figure 2 , perform step S1: provide a mask 10, the mask 10 is a single-chip version mask, the single-chip version mask refers to a technology that integrates the functions originally implemented by several chips into one chip, and the single-chip version mask includes multiple single chips 20. Figure 2 Only one single chip 20 ( Figure 2 In fact, there is more than one single chip 20 on the photomask 10; multiple single chips 20 can be arranged in an array, such as Figure 2 The matrix array arrangement in .
[0038] Each single chip 20 includes a plurality of Dies 30, each of which has different functions to achieve functional integration of the single chip 20. In this embodiment, the number of Dies 30 on the single chip 20 is at least one. Figure 2 The example in FIG. 4 shows four Die 30, but the number is not limited to this. A plurality of Die 30 can be arranged in a matrix array ( Figure 2 There is a gap between two adjacent Dies 30, and the gap between two adjacent Dies 30 can be the same or different; for example, Figure 2 The figure shows that the gap between two adjacent Dies 30 is the same. The adjacent two Dies 30 refer to the gaps between two adjacent Dies 30. Figure 2 In the figure, two Dies 30 that are adjacent in the horizontal direction and the vertical direction and two Dies 30 that are diagonally opposite to each other do not represent two adjacent Dies 30 .
[0039] Please refer to Figure 3 , executing step S2: performing a dicing process on the single chip 20 to divide the single chip 20 into a plurality of independent Dies 30, such as Figure 3 As shown in FIG. 1 , after the dicing process, the single chip 20 is diced by dicing lanes 40 ( Figure 3 In this embodiment, the dicing lanes 40 during the dicing process are partially located in the gap between two adjacent dies 30, so as to divide the single chip 20 into a plurality of independent dies 30. The dicing lanes 40 of different independent dies 30 may not overlap (e.g., Figure 3). In this embodiment, the single chip 20 originally belongs to a complete unit chip. Although the single chip 20 includes a plurality of Dies 30, there are no cutting paths between the plurality of Dies 30. Generally, only two adjacent single chips 20 are divided by cutting paths, that is, there are no cutting paths in the single chip 20. However, when there are no cutting paths in the single chip 20, when performing defect inspection on the single chip 20, it is necessary to synchronously transfer data of all Dies 30 in the single chip 20, and the data transfer time is long. After the transfer, the graphics of the single chip 20 are compared with the graphics stored in the database to identify the difference between the two and complete the defect inspection of the single chip; and since all Dies 30 in the single chip 20 are synchronously transferred data, the data transfer time is long, which leads to low inspection efficiency.
[0040] Execute step S3: perform defect inspection on each independent Die respectively to complete the defect inspection of the single chip on the mask. In this embodiment, the defect inspection is a Die to Database inspection method, that is, the graphics of each independent Die are compared with the graphics stored in the database to check the defects of the graphics of the independent Die; the graphics of all Dies on a single chip are stored in the database, and the database here can be a dedicated database for storing mask graphics. In this embodiment, the step of performing defect inspection on each independent Die includes: using a mask defect scanner to scan and collect the graphics of each independent Die; converting the collected graphics of each independent Die; and comparing the graphics of each independent Die after data conversion with the graphics stored in the database to identify the difference between the graphics of each independent Die and the graphics stored in the database.
[0041] More specifically, a mask defect scanner is used to scan and collect the graphics of each independent Die (it may also include scanning and collecting the graphics of the cutting path), and then the collected graphics of each independent Die are converted into data. Only after the data conversion can they be compared with the graphics stored in the database. Since the single chip is divided into several independent Dies by the cutting path processing, when the data of each independent Die is converted, the data conversion of each independent Die will be faster, so the data conversion time of the entire single chip will be shorter than the time of synchronously converting the data of all Dies in the single chip, thus shortening the data conversion time of the entire single chip; further, the graphics of each independent Die after the data conversion are compared with the graphics stored in the database to identify the difference between the graphics of each independent Die after the data conversion and the graphics stored in the database, and obtain the defects of the graphics of each independent Die to complete the defect inspection of the entire single chip, thereby improving the efficiency of the mask defect inspection. In this embodiment, the defect inspection of each independent Die can be completed in sequence to complete the defect inspection of the entire single chip. In defect inspection, this embodiment can avoid KLA Inspection detection by flipping the acquired Die pattern.
[0042] In summary, the photomask defect inspection method provided by the present invention includes: providing a photomask, on which there are multiple single chips, each chip including several Dies; performing a cutting path process on the single chip to divide the single chip into several independent Dies; performing a defect inspection on each independent Die respectively to complete the defect inspection of the single chip on the photomask. In the present invention, the original single chip does not have a cutting path. When performing a defect inspection on the single chip, it is necessary to synchronously transfer data for all Dies in the single chip, which will cause a long data transfer time problem; the present invention performs a cutting path process on the single chip to divide the single chip into several independent Dies, combined with performing a defect inspection on each independent Die respectively, the data transfer time of each independent Die is short, and the data transfer time of the entire single chip is shorter than the data transfer time of all Dies in the single chip synchronously, thereby shortening the data transfer time and improving the efficiency of the photomask defect inspection.
[0043] The above is only a preferred embodiment of the present invention and does not limit the present invention in any way. Any technician in the relevant technical field, without departing from the scope of the technical solution of the present invention, makes any form of equivalent replacement or modification to the technical solution and technical content disclosed in the present invention, which does not depart from the content of the technical solution of the present invention and still falls within the protection scope of the present invention.
Claims
1. A method for inspecting photomask defects, characterized in that: include: Providing a photomask, wherein the photomask has a plurality of single chips, wherein the single chip includes a plurality of dies; Performing a dicing process on the single chip to divide the single chip into a plurality of independent dies; Defect inspection is performed on each independent Die respectively to complete defect inspection of the single chip on the mask.
2. The method for inspecting photomask defects according to claim 1, wherein: The photomask is a single-chip photomask.
3. The method for inspecting photomask defects according to claim 1, wherein: The number of dies on the single chip is at least one.
4. The method for inspecting photomask defects according to claim 1, wherein: A plurality of the Dies are arranged in an array.
5. The method for inspecting photomask defects according to claim 1, wherein: There is a gap between two adjacent Dies.
6. The method for inspecting photomask defects according to claim 5, wherein: The dicing street portion during the dicing process is located in the gap between two adjacent dies.
7. The method for inspecting photomask defects according to claim 1, wherein: The defect inspection is a Die to Database inspection method.
8. The method for inspecting photomask defects according to claim 1, wherein: The steps to perform defect inspection on each individual die include: Collect and obtain the graphics of each independent Die; Convert the collected graphics of each independent Die into data; The graphics of each independent Die after data conversion are compared with the graphics stored in the database to identify the differences between the graphics of each independent Die and the graphics stored in the database.
9. The method for inspecting photomask defects according to claim 8, wherein: The image of each independent Die is obtained by scanning and collecting using a mask defect scanner.
10. The method for inspecting photomask defects according to claim 8, wherein: The graphics of all Dies on the single chip are stored in the database.