Ultra-clean control method and control system for a wafer etching environment

Abstract

The present invention provides a super-clean control method and control system for a wafer etching environment, which relates to the technical field of semiconductor devices, and includes: obtaining the laminar flow distribution of a super-clean space, constructing a laminar flow distribution map, and fitting streamline trajectories; obtaining the process space distribution of wafer etching, performing coordinate mapping, and establishing a mapping relationship between the wafer etching process and the laminar flow distribution; reading the process sewage discharge requirements and airflow control parameters of wafer etching, performing streamline fitting, and determining the matching streamline data; determining the airflow deviation value, performing airflow control parameter analysis, and obtaining adjustment control parameters for adjusting the airflow control parameters to meet the streamline data requirements of the process sewage discharge requirements. The present invention solves the technical problems in the prior art that the airflow control is mostly statically set, unable to dynamically adjust the airflow according to real-time process requirements and environmental changes, and unable to meet the personalized requirements for airflow in different regions, resulting in poor accuracy of airflow control.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and particularly to a method and a control system for ultra-clean control of a wafer etching environment. Background Art

[0002] In the production process of integrated circuits, wafers need to go through multiple etching steps to precisely form circuit patterns. The etching process has extremely high requirements for environmental cleanliness to ensure that the tiny structures of the circuits can be formed accurately without error. However, the existing air flow control in the etching environment is mostly statically set and cannot dynamically adjust the air flow according to real-time process requirements and environmental changes. Due to the complex and variable etching process and the uncertainty of pollutant generation, this static setting method cannot optimize the air flow in a timely manner according to the actual sewage discharge requirements of the process area, resulting in pollutant accumulation and affecting process stability. Moreover, different process areas have different requirements for air flow, and it is usually difficult for the existing technologies to achieve refined management of air flow parameters in different areas. For example, some areas require a higher air flow speed to ensure the effective discharge of particulate matter, while other areas require a lower air flow intensity to avoid interfering with the etching process. The existing control methods are difficult to flexibly meet the air flow requirements of different areas in the same environment, thus leading to unstable cleanliness during the etching process. Summary of the Invention

[0003] This application provides a method and a control system for ultra-clean control of a wafer etching environment, aiming to solve the technical problems that the existing air flow control is mostly statically set, cannot dynamically adjust the air flow according to real-time process requirements and environmental changes, and cannot meet the personalized requirements of different areas for air flow, resulting in poor accuracy of air flow control, and further leading to poor reliability of the etching process and poor product quality.

[0004] In the first aspect disclosed in the present application, a method for ultra-clean control of a wafer etching environment is provided. The method includes: the connection control module acquires the laminar flow distribution of the ultra-clean space, constructs a laminar flow distribution map, and fits the streamline trajectory into the laminar flow distribution map, where the streamline is used to describe the air flow velocity, direction, and distribution. The faster the air flow velocity, the denser the streamline, the boundary width of the streamline distribution represents the air flow distribution, and the arrow represents the air flow direction; acquires the process space distribution of wafer etching, performs coordinate mapping according to the position coordinates of the process space distribution and the laminar flow distribution map, and establishes a mapping relationship between the wafer etching process and the laminar flow distribution; the control module reads the process sewage discharge requirements and air flow control parameters of wafer etching, uses the air flow control parameters to perform streamline fitting of each laminar flow in the laminar flow distribution map, determines the matching streamline data of the wafer etching process area according to the mapping relationship; uses the matching streamline data to match with the process sewage discharge requirements, determines the air flow deviation value, and performs air flow control parameter analysis according to the air flow deviation value to obtain an adjustment control parameter, and the adjustment control parameter is used to adjust the air flow control parameter to meet the streamline data requirements of the process sewage discharge requirements.

[0005] In the second aspect disclosed in the present application, an ultra-clean control system for a wafer etching environment is provided. The system is used for the ultra-clean control method of a wafer etching environment described above. The system includes: a laminar flow distribution map construction unit, which is used for the connection control module to acquire the laminar flow distribution of the ultra-clean space, construct a laminar flow distribution map, and fit the streamline trajectory into the laminar flow distribution map, where the streamline is used to describe the air flow velocity, direction, and distribution. The faster the air flow velocity, the denser the streamline, the boundary width of the streamline distribution represents the air flow distribution, and the arrow represents the air flow direction; a mapping relationship establishment unit, which is used to acquire the process space distribution of wafer etching, perform coordinate mapping according to the position coordinates of the process space distribution and the laminar flow distribution map, and establish a mapping relationship between the wafer etching process and the laminar flow distribution; a matching streamline data determination unit, which is used for the control module to read the process sewage discharge requirements and air flow control parameters of wafer etching, use the air flow control parameters to perform streamline fitting of each laminar flow in the laminar flow distribution map, and determine the matching streamline data of the wafer etching process area according to the mapping relationship; an air flow control parameter analysis unit, which is used to use the matching streamline data to match with the process sewage discharge requirements, determine the air flow deviation value, perform air flow control parameter analysis according to the air flow deviation value, and obtain an adjustment control parameter, and the adjustment control parameter is used to adjust the air flow control parameter to meet the streamline data requirements of the process sewage discharge requirements.

[0006] One or more technical solutions provided in the present application have at least the following technical effects or advantages:

[0007] Obtain the laminar flow distribution of the ultra-clean space, construct a laminar flow distribution map, and fit the streamline trajectory. The streamline fitting not only describes parameters such as the velocity and direction of the air flow, but also clearly represents the boundary and flow direction of the air flow, making the air flow state of the entire ultra-clean space more controllable and avoiding the formation of turbulent flow and dead zones; map the process space distribution of wafer etching to the air flow laminar flow distribution map to establish an accurate correspondence between the process area and the air flow. Since different etching process areas may have different requirements for the air flow, such as air flow velocity, direction, etc., this mapping relationship ensures a high degree of fit between the process and the air flow, thereby ensuring that the air flow requirements of each process area are specifically controlled and optimized, ensuring the effectiveness of pollutant emissions and air flow purification in these key areas, and thus improving the quality of the etching process; read the process sewage discharge requirements and air flow control parameters. By analyzing the sewage discharge requirements of the process area, the air flow parameters are adjusted so that parameters such as air flow velocity, direction, and exhaust air volume meet the sewage discharge and cleanliness requirements; according to the real-time read air flow control parameters, the streamline data can be dynamically adjusted to ensure that the air flow is always in the best state throughout the etching process, reducing the problems of pollutant accumulation and poor exhaust; use the matching streamline data to match the process sewage discharge requirements, calculate the air flow deviation value, and adjust the air flow control parameters. By comparing the process sewage discharge requirements and the actual air flow state, deviations in aspects such as air flow velocity, direction, and pressure can be quickly identified, and the control parameters can be adjusted in real time to ensure that the air flow is in the best state at any time. By continuously optimizing the air flow control parameters, the cleanliness requirements of the process area by the air flow are ensured, avoiding any situation of local pollutant accumulation or air flow out of control, and significantly improving the efficiency and product quality of the wafer etching process.

[0008] The above description is only an overview of the technical solution of this application. In order to be able to more clearly understand the technical means of this application, it can be implemented in accordance with the content of the specification. And in order to make the above and other purposes, features and advantages of this application more obvious and understandable, the following specifically gives the specific implementation manners of this application. Brief Description of the Drawings

[0009] Figure 1 It is a schematic flow chart of an ultra-clean control method for a wafer etching environment provided by an embodiment of this application;

[0010] Figure 2 It is a schematic structural diagram of an ultra-clean control system for a wafer etching environment provided by an embodiment of this application.

[0011] Description of the reference numerals: laminar flow distribution map construction unit 10, mapping relationship establishment unit 20, matching streamline data determination unit 30, air flow control parameter analysis unit 40. Detailed Description of the Preferred Embodiments

[0012] By providing a super-clean control method and control system for a wafer etching environment in an embodiment of the present application, the technical problems in the prior art are solved. In the prior art, the airflow control is mostly statically set, and it is impossible to dynamically adjust the airflow according to real-time process requirements and environmental changes, and it cannot meet the personalized requirements for airflow in different regions, resulting in poor accuracy of airflow control, and further leading to poor reliability of the etching process and poor product quality.

[0013] After introducing the basic principle of the present application, various non-limiting embodiments of the present application will be specifically introduced below in conjunction with the accompanying drawings of the specification. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0014] Embodiment 1, as Figure 1 shown, an embodiment of the present application provides a super-clean control method for a wafer etching environment, and the method includes:

[0015] Connect the control module to obtain the laminar flow distribution of the super-clean space, construct a laminar flow distribution map, and fit the streamline trajectory into the laminar flow distribution map, where the streamline is used to describe the air flow velocity, direction and distribution. The faster the air flow velocity, the denser the streamline, the boundary width of the streamline distribution represents the air flow distribution, and the arrow represents the air flow direction.

[0016] In high-cleanliness areas, laminar flow design is usually adopted, and the air flow moves in a single direction at a stable speed, taking the particulate matter away from the working area. Vertical laminar flow can quickly discharge pollutants and prevent them from depositing on sensitive equipment or products. First, in the super-clean space, air flow data such as air flow velocity, air flow direction, and air flow distribution are collected in real time through a wind speed sensor for equipment, etc. The air flow data is mapped in three-dimensional space according to its actual position to generate a distribution model of the laminar flow. A graphical tool is used to visually display the laminar flow distribution model to generate a three-dimensional air flow distribution map for real-time observation of the air flow distribution state.

[0017] A streamline is a trajectory that describes the movement of air flow at a certain instant. In a laminar flow environment, the streamline represents the flow direction and path of gas molecules. The faster the air flow velocity, the denser the streamline, indicating that the air flow is active in this area. Specifically, the air flow velocity is proportional to the density of the streamline, that is, the denser the streamline, the faster the air flow velocity at that place, and vice versa, indicating that the air flow is slower; the distribution boundary width of the streamline represents the distribution range of the air flow in different regions, and the influence area of the air flow can be analyzed through numerical calculation; the arrow on the streamline represents the flow direction of the air flow, that is, from which area the gas flows to which area.

[0018] Based on the existing laminar flow distribution data, streamline trajectories are fitted through a mathematical model. For example, the finite element method is used to simulate the motion state of the air flow in three-dimensional space. By fitting the streamline trajectories, the specific flow conditions of the air flow in the entire space are obtained, and these streamlines are superimposed on the constructed laminar flow distribution map to obtain a complete air flow model.

[0019] Obtain the process space distribution of wafer etching, perform coordinate mapping according to the position coordinates of the process space distribution and the laminar flow distribution map, and establish the mapping relationship between the wafer etching process and the laminar flow distribution.

[0020] The process space distribution refers to the distribution of each process step, such as the reaction area, deposition area, etching area, etc., in the actual physical space during the wafer etching process. Each process area has specific requirements for the air flow, mainly to ensure pollutant emissions, air flow purification effects, and process accuracy. First, according to the specific process of wafer etching, determine the positions of different process areas in the physical space, identify the spatial positions of different process areas, for example, establish a three-dimensional coordinate system, such as the X, Y, and Z axes, for accurately positioning these process areas, and use relevant measuring equipment, such as a laser depth gauge, to determine the specific spatial boundaries of each process area, generate the process space distribution, and ensure that the coordinates of each area can be accurately mapped to the overall space.

[0021] Obtain the coordinate information of the air flow distribution area according to the laminar flow distribution map, correspond the coordinates of the process space distribution with the coordinates in the laminar flow distribution map, and establish the mapping relationship between the wafer etching process and the laminar flow distribution. For example, if the etching area is located at a certain position in space, the air flow data at that position needs to be correspondingly obtained. Through this mapping, it can be ensured that within the actual etching area, the air flow can be controlled according to the process requirements.

[0022] The control module reads the process sewage discharge requirements and air flow control parameters of wafer etching, uses the air flow control parameters to perform streamline fitting of each laminar flow in the laminar flow distribution map, and determines the matching streamline data of the wafer etching process area according to the mapping relationship.

[0023] The control module reads the process sewage discharge requirements and airflow control parameters for wafer etching. Among them, the process sewage discharge requirements refer to the need to effectively remove pollutants generated during the wafer etching process through the airflow system in order to maintain the cleanliness and stability of the process environment. The sewage discharge requirements may include the discharge of debris generated during etching and the cleanliness requirements of dust in the air. The airflow control parameters refer to the various indicators for controlling the airflow, such as airflow velocity, direction, exhaust air volume, pressure, etc. The airflow control parameters need to be adjusted according to the process sewage discharge requirements to ensure that the airflow characteristics meet the process requirements. Exemplarily, during the etching process, particulate matter and chemical by-products are generated. The diameter range of the particulate matter is 50nm to 100nm, and the corresponding airflow velocity needs to reach at least 0.5m / s to ensure that the pollutants can be effectively carried away.

[0024] Perform streamline fitting. Specifically, use fluid mechanics simulation software to establish an airflow simulation model. The input parameters of the model are airflow control parameters, including airflow velocity, direction, exhaust air volume, pressure, etc. Through numerical calculation methods, such as the finite element method, simulate the airflow in the ultra-clean space, and fit and adjust the generated streamline in the simulation result with the existing streamline in the laminar flow distribution map to ensure that it conforms to the current etching process. After fitting, use the coordinate mapping relationship between the process area and the laminar flow distribution map to project the streamline data into the three-dimensional space of the process area to generate matching streamline data that matches the wafer etching process area, so as to determine the actual movement trajectory of the airflow in each process area.

[0025] Match the matching streamline data with the process sewage discharge requirements to determine the airflow deviation value, and perform analysis of the airflow control parameters according to the airflow deviation value to obtain adjustment control parameters. The adjustment control parameters are used to adjust the airflow control parameters to meet the streamline data requirements of the process sewage discharge requirements.

[0026] Extract data such as the velocity, direction, exhaust air volume, and pressure distribution of the airflow from the fitted matching streamline data, compare the extracted streamline data with the process sewage discharge requirements one by one, and judge whether the actual airflow characteristics meet the process requirements. For the parts that do not meet the requirements, calculate the difference between the actual data and the required data to obtain the airflow deviation value, including airflow velocity deviation, direction deviation, exhaust air volume deviation, and pressure deviation.

[0027] Analyze each airflow deviation value separately to judge its adjustment direction, such as increasing or decreasing, and associate the deviation of the airflow with the parameters in the control system. For example, the airflow velocity deviation can be adjusted by adjusting the rotation speed of the fan or the opening degree of the valve; the airflow direction deviation can be corrected by adjusting the direction of the air outlet or changing the duct design. According to the deviation value and the response relationship of the control system, generate adjustment control parameters, including fan speed, valve opening degree, duct configuration, etc.

[0028] Exemplarily, the actual air flow velocity in a certain process area is 0.35 m / s, while the air flow velocity requirement is 0.5 m / s, so the deviation value is -0.15 m / s; the actual exhaust air volume is 40 cubic meters per hour, while the exhaust air volume requirement is 50 cubic meters per hour, and the deviation value is -10 cubic meters per hour; the actual pressure is 8 Pa, while the target pressure is 10 Pa, and the deviation value is -2 Pa. Through the calculation of the deviation value, an air flow adjustment strategy is determined. For example, by increasing the fan speed, the air flow velocity is increased from 0.35 m / s to 0.5 m / s, and the opening is increased to ensure that the exhaust air volume reaches 50 cubic meters per hour and the pressure reaches 10 Pa, and finally the adjustment control parameters that meet the requirements are generated.

[0029] According to the parsed adjustment control parameters, the relevant air flow control devices are automatically adjusted so that the air flow system can meet the process sewage discharge requirements in the next working cycle, and finally ensure the quality of the wafer etching process.

[0030] Furthermore, the position coordinates distributed according to the process space are mapped with the laminar flow distribution diagram to establish a mapping relationship between the wafer etching process and the laminar flow distribution, including:

[0031] Obtain the three-dimensional coordinates of the laminar flow distribution diagram; determine multiple points in the area according to the process area of the wafer etching to establish mapping points, and the mapping points have spatial position coordinates; project the spatial position coordinates of the mapping points into the three-dimensional coordinates of the laminar flow distribution diagram to determine the matching flow layer path, and establish the mapping relationship between the matching flow layer path and the process area.

[0032] The laminar flow distribution diagram is an acquired three-dimensional graphic model for displaying the air flow distribution state. A three-dimensional coordinate system, such as the X, Y, and Z axes, is established in the model, and the position, velocity, and direction of the air flow in space are displayed through this three-dimensional coordinate system to represent the position of the air flow in space.

[0033] The mapping point is a key spatial point selected in the process area for matching with the air flow distribution diagram. First, the entire process area of the wafer etching is divided to ensure that each area can have a representative mapping point. Multiple key points are selected as mapping points within each process area. These points can be the center point or boundary point of the area. The specific selection is based on the sensitivity of the process. Each mapping point has its three-dimensional coordinates in the process space, and these coordinates are used to correspond to the laminar flow distribution diagram.

[0034] Convert the mapped point coordinates in the process area to the three-dimensional coordinate system of the laminar flow distribution map. This conversion can be accomplished through geometric mapping or numerical interpolation methods to ensure the accuracy of the corresponding positions of the mapped points in the air flow distribution map. By the projected coordinates, find the streamline trajectory of the air flow at the mapped points, that is, the movement path of the air flow. These streamlines represent the actual movement of the air flow in the process area.

[0035] The laminar flow path is the path along which the air flow moves in the laminar flow distribution map. After the projection is completed, determine which laminar flow paths match the mapped points in the process area. Among them, in some cases, a mapped point may correspond to a specific laminar flow path, meaning that the air flow at that position has a unique trajectory in the process area; in other cases, a mapped point may cover multiple laminar flow paths, and the air flow may have multiple flow paths in the process area. It is necessary to calculate the proportion weight to determine the influence degree of each path; in still other cases, the mapped points of multiple process areas correspond to the same laminar flow path. At this time, it is necessary to balance the air flow requirements of different areas through process requirement analysis. Determine the matching laminar flow paths according to the correspondence between the mapped points and the laminar flow paths, and then establish the mapping relationship between the matching laminar flow paths and the process area.

[0036] Furthermore, determining multiple points in the area according to the process area of wafer etching and establishing mapped points includes:

[0037] Determine the process sensitivity of the process area. The process sensitivity describes the influence degree of the process flow on the wafer etching quality; configure the grid division unit according to the process sensitivity, where the higher the process sensitivity, the smaller the grid division unit; use the grid division unit to divide the process area, and set the center point of each grid unit as the mapped point.

[0038] Determine the process sensitivity of the process area. The process sensitivity is the sensitivity of a specific process area to air flow control and other parameters, that is, how sensitive certain areas of the process are to changes in air flow affecting the etching quality. Different process areas may have different requirements for air flow. Therefore, it is necessary to determine their sensitivity according to the characteristics of these areas. For example, during the etching process, some areas may be very sensitive to changes in air flow velocity, direction, pressure, etc. Any small change will affect the wafer etching quality. For example, during a specific etching step, fluctuations in air flow velocity may cause uneven etching. The process sensitivity of each process area can be generated by analyzing past experimental data, calculating the etching effects of different process areas, and evaluating the impact of air flow fluctuations on the etching quality.

[0039] The process area is uniformly divided into grids according to process sensitivity. Among them, grids of different sizes are used according to process sensitivity. Small grids are used in high-sensitivity areas to accurately monitor the air flow state at each tiny position; large grids are used in low-sensitivity areas to save computing resources.

[0040] According to the grid division result, the area is divided into multiple grid cells, each cell representing a part of the area. A mapping point is set at the geometric center position of each grid cell, and the three-dimensional coordinates of this mapping point are used to map with the three-dimensional coordinates in the laminar flow distribution map to monitor the change of air flow.

[0041] Furthermore, configure the grid division unit according to the process sensitivity, including:

[0042] Perform normalization processing on the process sensitivity so that the sensitivity of each process area is converted to between 0 and 1; according to the preset rules: calculate the grid division unit by using the sensitivity normalization value of the process area where is the preset maximum grid size, corresponding to the largest grid unit for the lowest sensitivity area, and S is the sensitivity normalization value of the process area.

[0043] The purpose of normalization processing is to standardize the sensitivity values of different process areas so that a unified scale can be used for subsequent calculations. After normalization, all process area sensitivity values are converted to a fixed range, that is, between 0 and 1, where 1 represents the highest sensitivity of the process area to air flow, and 0 represents the lowest sensitivity of the process area to air flow. The min-max normalization method can be used, and the formula is as follows: , where is the sensitivity normalization value, is the original process sensitivity value, is the largest sensitivity value among all process areas, is the smallest sensitivity value among all process areas.

[0044] After normalization processing, calculate the grid division unit according to the following formula : , where is the preset maximum grid size for the lowest sensitivity area, which represents the size of the largest grid cell allowed in the area with the lowest sensitivity, is designed to reflect the inverse relationship between process sensitivity and grid size, that is, the higher the sensitivity, the finer the grid division. Specifically, first determine the maximum grid division unit , for example, It can be 10 millimeters, indicating the low-sensitivity area. The maximum size of the grid cell can be 10 mm. After normalizing the sensitivity of each process area, a value is obtained. , and then substitute it into the formula to calculate the grid division unit of each area.

[0045] Furthermore, by projecting the spatial position coordinates of the mapping points into the three-dimensional coordinates of the laminar flow distribution map, the matching laminar flow path is determined, including:

[0046] Obtain the projection ratio relationship between the spatial position coordinates and the laminar flow path. Determine the matching laminar flow path according to the projection ratio relationship. The matching laminar flow path includes one-to-one, one-to-many, and many-to-one. When the matching laminar flow path is one-to-one, establish a one-to-one mapping relationship. When the matching laminar flow path is one-to-many or many-to-one, establish a one-to-many or many-to-one mapping relationship and configure a ratio weight, and the ratio weight corresponds to the projection ratio relationship.

[0047] The spatial position coordinates are the three-dimensional coordinates of the mapping points. The laminar flow path is the flow path of the air flow passing through a certain area in the laminar flow distribution map. The projection ratio relationship refers to the spatial overlap degree between the mapping points of the process area and the air flow laminar flow path. Project the position coordinates of each mapping point into the laminar flow distribution map, find its corresponding laminar flow path, and calculate the projection ratio of each mapping point to the corresponding laminar flow path through the overlapping area or volume of the space. For example, if the overlapping area of a mapping point with a certain laminar flow path is large, then the influence of this path on this process area has a higher proportion. The matching laminar flow path includes one-to-one, one-to-many, and many-to-one.

[0048] If the spatial position of a certain mapping point has the highest projection ratio with a laminar flow path, and only this laminar flow path has an obvious influence on this point, then it is determined as a one-to-one mapping relationship. In this case, directly establish the association relationship between this mapping point and the laminar flow path, which means that the air flow demand of this process area is completely provided by this laminar flow path.

[0049] The one-to-many mapping relationship means that a certain mapping point is affected by multiple laminar flow paths, which means that in this area, the air flow may come from different laminar flow paths, which may lead to air flow mixing. In this case, first, according to the projection ratio relationship between each laminar flow path and the mapping point, determine the influence ratio of each path on this area. According to the size of the projection ratio, assign a weight value to each laminar flow path. The larger the weight value, the greater the influence of this laminar flow path on this process area. According to the calculated weight value, establish the mapping relationship between this mapping point and multiple laminar flow paths.

[0050] The many-to-one mapping relationship means that the mapping points in multiple process areas are affected by the same streamline path, which means that this streamline path serves as an air supply for multiple process areas. In this case, according to the projection ratio of each mapping point, the air flow influence weight of this streamline path on each process area is allocated, and according to the calculated weight value, the mapping relationship between multiple mapping points and the streamline path is established.

[0051] Furthermore, the matching streamline data is used to match with the process sewage discharge requirements to determine the air flow deviation value, including:

[0052] According to the process sewage discharge requirements, determine the air flow parameter requirements. The air flow parameters include air flow velocity, direction, exhaust air volume, and target pressure. According to the matching streamline data, obtain the air flow velocity, direction, exhaust air volume, and air flow distribution. Calculate the pressure distribution based on the air flow velocity and air flow distribution. Respectively, calculate the difference values between the air flow velocity, direction, exhaust air volume, and target pressure in the air flow parameter requirements and the air flow velocity, direction, exhaust air volume, and pressure distribution of the matching streamline data to determine the air flow deviation value.

[0053] The process sewage discharge requirements refer to that during the wafer etching process, in order to maintain the cleanliness and stability of the process environment, it is necessary to effectively remove the pollutants generated during the processing through the air flow system. The sewage discharge requirements can include the discharge of debris generated during the etching process, and the cleanliness requirements of dust in the air, etc. According to the process sewage discharge requirements, determine the air flow parameter requirements, including air flow velocity, direction, exhaust air volume, and target pressure. Among them, for the air flow velocity, it is necessary to ensure that the air flow velocity is fast enough to timely carry the debris and dust out of the process area; for the air flow direction, the air flow needs to flow in a specific direction to ensure that the pollutants will not flow back to the process area; for the exhaust air volume, the exhaust air volume of the air flow system needs to meet the sewage discharge requirements of the entire process area to ensure sufficient air circulation; for the target pressure, in order to ensure the smooth flow of the air flow, a certain pressure difference usually needs to be maintained in the process area, and the target pressure is the pressure difference between the process area and the surrounding environment.

[0054] According to the matching streamline data, obtain the air flow velocity, direction, exhaust air volume, and air flow distribution. The air flow velocity is the actual air flow velocity distribution in each process area; the direction is the actual flow direction of the air flow in each process area; the streamline data combined with the distribution of the streamline path can calculate the actual exhaust air volume of each area; the air flow distribution is the overall distribution of the air flow in space, including the changes in air flow velocity and direction. According to the air flow velocity and air flow distribution, the pressure distribution of each process area can be calculated using fluid mechanics principles such as the Bernoulli equation. The Bernoulli equation is: , where c is a constant, is the air density, and v is the air flow velocity.

[0055] Compare the matched streamline data with the airflow parameter requirements to determine whether the following conditions are met: whether the airflow velocity meets the sewage discharge requirements to ensure that pollutants are carried away by a fast enough airflow; whether the airflow direction is towards the exhaust vent to avoid airflow backflow or pollutant retention; whether the airflow pressure meets the sewage discharge requirements to ensure that the airflow in the area will not be disordered or retained. The calculation formula for the difference value is as follows: ; ; , where, 、 、 are the airflow velocity difference value, direction difference value, and pressure difference value respectively, 、 、 are the airflow velocity, direction, and target pressure in the airflow parameter requirements respectively, 、 、 are the airflow velocity, direction, and pressure of the matched streamline data respectively. If the calculated airflow velocity difference value, direction difference value, and pressure difference value are all within the preset threshold range, it is determined to be a match; otherwise, it is determined to be a mismatch.

[0056] Furthermore, perform the airflow control parameter analysis according to the airflow deviation value to obtain adjustment control parameters, including:

[0057] Locate the abnormal process area according to the air flow deviation value, and based on the laminar flow distribution map, search for the streamline trajectory starting from the abnormal process area to obtain the deviation streamline trajectory, which has a cross-flow layer mark; according to the cross-flow layer mark, match the target air flow control parameters for abnormal adjustment, and at the same time, according to the cross-flow layer mark, identify the cross-influence process area through the laminar flow distribution map, and obtain the influence parameters and influence coefficients of the target air flow control parameters on the cross-influence process area; according to the deviation streamline trajectory and the mapping relationship between the wafer etching process and the laminar flow distribution, identify the neighborhood process area in the laminar flow distribution map, and search for the streamline trajectory of the neighborhood process area, which has an overlapping influence flow layer or an adjacent influence area mark; based on the overlapping influence flow layer or the adjacent influence area mark, identify the influence parameters and their influence coefficients of the abnormal process area and the neighborhood process area; establish a first objective function for the abnormal process area with the target air flow control parameters, establish a second objective function for the cross-influence process area and a third objective function for the neighborhood process area with the influence parameters and their influence coefficients of the cross-influence process area and the neighborhood process area respectively, and determine the adjustment allocation weight according to the process sensitivity of the abnormal process area, the cross-influence process area and the neighborhood process area, and use the adjustment allocation weight to fuse the first objective function, the second objective function and the third objective function to determine the fused objective function; aiming at maximizing the adjustment of the air flow deviation value and minimizing the influence on the neighborhood process area, perform global optimization through the fused objective function to obtain the adjustment control parameters, and the adjustment control parameters are the control parameter adjustment strategies with the largest calculation result of the fused objective function.

[0058] Locate the abnormal process area according to the air flow deviation value. Specifically, if the calculated air flow velocity difference value, direction difference value, and pressure difference value are all within the preset threshold range, it is determined to be a match; otherwise, it is determined to be a mismatch. In this case, it is marked as an abnormal process area.

[0059] Starting from the abnormal process area, search for the flow trajectory of the air flow. According to the streamline data of the laminar flow distribution map, trace the flow path of the air flow from the starting point, that is, the abnormal process area, to other areas. This can be completed through numerical simulation or streamline fitting tools. By comparing the normal streamline trajectory, determine which streamlines have deviated or are abnormal, and obtain the deviation streamline trajectory according to the comparison result.

[0060] During the streamline trajectory search process, some cross-flow layer areas are obtained. The cross-flow layer refers to the area where the air flows interfere and cross each other in space. This situation may cause changes in the air flow velocity and direction, thereby triggering abnormalities. Through the laminar flow distribution map, these cross-flow layer areas are marked to identify the air flow interference phenomena in these areas in subsequent analysis.

[0061] By analyzing the cross-flow layer region, airflow problems in the abnormal process region can be identified. Furthermore, the corresponding airflow control parameters can be adjusted. For example, if the airflow velocity is low, the rotational speed of the fan can be increased or the area of the airflow inlet can be enlarged. If the airflow direction is incorrect, the direction of the airflow guiding device can be adjusted. Select the parameters that are most effective for airflow adjustment for optimization to ensure that the airflow in the abnormal region returns to normal.

[0062] When adjusting the airflow control parameters, the change in airflow will not only affect the abnormal region but may also have a cross-impact on adjacent process regions. Therefore, before adjusting the airflow, it is necessary to evaluate these cross-impacts. Specifically, use the laminar flow distribution map to analyze the impact of airflow adjustment in the cross-flow layer region on the airflow distribution in other process regions, and identify these regions that will be affected as cross-impact process regions.

[0063] For each identified cross-impact process region, determine the degree of influence of the airflow adjustment on these regions, specifically including the influence parameters and the influence coefficient, which are used to quantitatively describe the influence of airflow adjustment on other process regions. Among them, the influence parameters include airflow velocity, direction, exhaust air volume, and pressure, etc. These parameters indicate how the airflow in the cross-impact region changes after the airflow adjustment; the influence coefficient is a quantitative value used to measure the influence generated by the airflow adjustment in a region. For example, the influence coefficient can reflect the degree of influence on the airflow velocity in the adjacent region after adjusting the fan speed. The larger the coefficient, the more significant the adjustment's influence on that region.

[0064] Based on the deviation streamline trajectory and the mapping relationship between the wafer etching process and the laminar flow distribution, it is possible to extend from the abnormal region to other neighboring process regions that may be affected. Neighboring process regions refer to regions that are adjacent to the abnormal region or where the airflow interacts. In these regions, airflow adjustment or abnormalities may affect adjacent process regions, thereby affecting the airflow balance of the entire system. Neighboring process regions usually refer to regions that are physically adjacent to the abnormal process region, and the spatial distance in a three-dimensional coordinate system can be used to determine which regions are within the neighboring range of the abnormal region; or, through streamline trajectory analysis, it is possible to judge the flow path of the airflow between the abnormal region and other regions. If the airflow path in the abnormal region overlaps with that of a neighboring region, then that region is regarded as a neighboring process region.

[0065] Search for the movement trajectories of the airflows within the neighborhood area, focusing on those streamlines that interact with the airflow trajectories in the abnormal area. Through these streamlines, it can be determined whether the airflow adjustment in the abnormal area will affect the neighborhood area. Based on the search results, mark the overlapping influence flow layers and adjacent influence areas. The overlapping influence flow layer is the flow layer where the airflows cross or overlap between different process areas. When the airflow changes in one area, it may affect the airflow distribution in other areas; although the adjacent influence areas do not directly overlap the airflows, due to the adjacency of the airflows, they are indirectly affected by the airflow changes in the neighboring areas.

[0066] By marking the overlapping influence flow layers and adjacent influence areas, further analyze the airflow states in these areas, and quantify the specific impacts of the airflow adjustment in the abnormal process area and the neighborhood process area. Specifically, through numerical simulation or simulation calculation, based on the streamline trajectory analysis in the overlapping or adjacent areas, obtain the specific impacts on each area after the airflow adjustment, including calculating the specific numerical changes in the airflow velocity, direction, exhaust air volume, and pressure in different process areas to obtain the influence parameters; use the streamline trajectory and laminar flow distribution map, and calculate the degree of influence of the airflow adjustment in the abnormal area on the neighborhood area through the overlapping area or volume of the airflow. For example, calculate the ratio of the pressure change in the neighborhood process area to the pressure change in the abnormal area to obtain the influence coefficient.

[0067] The target airflow control parameters include airflow velocity, direction, exhaust air volume, and pressure. Based on these parameters, establish the first objective function to describe the optimization objective of airflow control in the abnormal area. The general form is to minimize the airflow deviation or maximize the airflow control effect. The establishment of the objective function is based on the airflow control requirements in the abnormal area, such as reducing the airflow deviation or enhancing the airflow purification ability. The goal of this objective function is to adjust the airflow control parameters to make the airflow state in the abnormal process area as close as possible to the process requirements.

[0068] Establish the second objective function for the cross-influence process area based on the influence parameters and influence coefficients of the cross-influence process area. The objective function of the cross-influence area needs to minimize the adverse effects of the airflow adjustment in the abnormal area on these areas, while trying to maintain the airflow adjustment effect. The purpose of establishing the objective function is to minimize the negative impacts on the cross areas while adjusting the airflow in the abnormal area.

[0069] Establish the third objective function for the neighborhood process area based on the influence parameters and influence coefficients of the neighborhood process area. The objective function of the neighborhood process area is similar to that of the cross area, and the goal is to minimize the interference of the airflow adjustment on these areas.

[0070] Determine the adjusted allocation weights according to the process sensitivities of the abnormal process area, the cross - influence process area, and the adjacent process area. Among them, the high - sensitivity area requires a higher weight because the change in air flow has a great impact on the process, and the air flow requirements of these areas must be ensured first; the low - sensitivity area can be given a lower weight because these areas have a higher tolerance for air - flow adjustment. According to the adjusted allocation weights, the first objective function, the second objective function, and the third objective function are fused in a weighted manner to form a comprehensive fused objective function, so as to consider the air - flow states of the abnormal area and other affected areas simultaneously during overall optimization.

[0071] The air - flow deviation value reflects the difference between the actual air - flow parameters and the process requirements. Maximizing the adjustment means minimizing these deviations through the adjustment of air - flow control parameters, so that the air - flow parameters better meet the process requirements. In addition to the abnormal process area, it is necessary to ensure that the impact of air - flow adjustment on the adjacent process area is minimized, that is, the air - flow state of the adjacent area should not deviate greatly due to the adjustment of the air - flow in the abnormal area.

[0072] Combine the two objectives of maximizing the air - flow deviation adjustment and minimizing the impact on the adjacent process area. Based on the fused objective function, use a global optimization method to find an air - flow control parameter adjustment strategy that meets the above two objectives and can maximize the fused objective function. Exemplarily, set the initial values of the air - flow control parameters, such as the fan speed, valve opening, flow control, etc., and iteratively search in the parameter space through a global optimization algorithm to update the air - flow control parameters to maximize the fused objective function. After each iterative update, calculate the value of the new fused objective function. When the fused objective function reaches the maximum value or meets the preset convergence condition, end the optimization. The finally obtained air - flow control parameters are the optimal control parameter adjustment strategy.

[0073] In summary, the ultra - clean control method for a wafer etching environment provided by the embodiments of the present application has the following technical effects:

[0074] Obtain the laminar flow distribution of the ultra-clean space, construct a laminar flow distribution map, and fit the streamline trajectory. The streamline fitting not only describes parameters such as the velocity and direction of the air flow, but also clearly represents the boundary and flow direction of the air flow, making the air flow state of the entire ultra-clean space more controllable and avoiding the formation of turbulent flow and dead corner areas; map the process space distribution of wafer etching to the laminar flow distribution map of the air flow to establish an accurate correspondence between the process area and the air flow. Since different etching process areas may have different requirements for the air flow, such as air flow velocity, direction, etc., this mapping relationship ensures a high degree of fit between the process and the air flow, thereby ensuring that the air flow requirements of each process area are specifically controlled and optimized, guaranteeing the effectiveness of pollutant emission and air flow purification in these key areas, and thus improving the quality of the etching process; read the process sewage discharge requirements and air flow control parameters. By analyzing the sewage discharge requirements of the process area, the air flow parameters are adjusted so that parameters such as air flow velocity, direction, and exhaust air volume meet the sewage discharge and cleanliness requirements; according to the real-time read air flow control parameters, the streamline data can be dynamically adjusted to ensure that the air flow is always in the best state throughout the etching process, reducing the problems of pollutant accumulation and poor exhaust; use the matching streamline data to match the process sewage discharge requirements, calculate the air flow deviation value, and adjust the air flow control parameters. By comparing the process sewage discharge requirements and the actual air flow state, deviations in aspects such as air flow velocity, direction, and pressure can be quickly identified, and the control parameters can be adjusted in real time to ensure that the air flow is in the best state at any time. By continuously optimizing the air flow control parameters, the cleanliness requirements of the air flow for the process area are ensured, avoiding any situation of local pollutant accumulation or air flow out of control, and significantly improving the efficiency and product quality of the wafer etching process.

[0075] Embodiment 2, based on the same inventive concept as the ultra-clean control method for a wafer etching environment in the foregoing embodiment, as Figure 2 shown, the embodiment of the present application provides an ultra-clean control system for a wafer etching environment, and the system includes:

[0076] Laminar flow distribution map construction unit 10, the laminar flow distribution map construction unit 10 is used to connect to the control module to obtain the laminar flow distribution of the ultra-clean space, construct a laminar flow distribution map, and fit the streamline trajectory into the laminar flow distribution map, where the streamline is used to describe the air flow velocity, direction and distribution, the faster the air flow velocity, the denser the streamline, the boundary width of the streamline distribution represents the air flow distribution, and the arrow represents the air flow direction; mapping relationship establishment unit 20, the mapping relationship establishment unit 20 is used to obtain the process space distribution of wafer etching, perform coordinate mapping according to the position coordinates of the process space distribution and the laminar flow distribution map, and establish the mapping relationship between the wafer etching process and the laminar flow distribution; matching streamline data determination unit 30, the matching streamline data determination unit 30 is used to read the process sewage discharge requirements and air flow control parameters of wafer etching through the control module, use the air flow control parameters to perform streamline fitting of each laminar flow in the laminar flow distribution map, and determine the matching streamline data of the wafer etching process area according to the mapping relationship; air flow control parameter analysis unit 40, the air flow control parameter analysis unit 40 is used to match the matching streamline data with the process sewage discharge requirements, determine the air flow deviation value, and perform air flow control parameter analysis according to the air flow deviation value to obtain an adjustment control parameter, and the adjustment control parameter is used to adjust the air flow control parameter to meet the streamline data requirements of the process sewage discharge requirements.

[0077] Furthermore, the system further includes a mapping relationship acquisition unit to perform the following operation steps:

[0078] Obtain the three-dimensional coordinates of the laminar flow distribution map; determine multiple points in the area according to the process area of wafer etching, establish mapping points, and the mapping points have spatial position coordinates; project the spatial position coordinates of the mapping points into the three-dimensional coordinates of the laminar flow distribution map, determine the matching flow layer path, and establish the mapping relationship between the matching flow layer path and the process area.

[0079] Furthermore, the system further includes a mapping point acquisition unit to perform the following operation steps:

[0080] Determine the process sensitivity of the process area, where the process sensitivity describes the influence degree of the process flow on the wafer etching quality; configure the grid division unit according to the process sensitivity, where the higher the process sensitivity, the smaller the grid division unit; use the grid division unit to divide the process area, and set the center point of each grid unit as the mapping point.

[0081] Furthermore, the system further includes a normalization processing unit to perform the following operation steps:

[0082] Perform normalization processing on the process sensitivity so that the sensitivity of each process area is converted to between 0 and 1; according to the preset rules: , the grid division unit is calculated by using the sensitivity normalization value of the process area , where is the preset maximum grid size, corresponding to the maximum grid unit of the area with the lowest sensitivity, and S is the sensitivity normalization value of the process area.

[0083] Furthermore, the system further includes a proportion weight configuration unit to perform the following operation steps:

[0084] Obtain the projection proportion relationship between the spatial position coordinates and the flow layer path, determine the matching flow layer path according to the projection proportion relationship, and the matching flow layer path includes one-to-one, one-to-many, and many-to-one; when the matching flow layer path is one-to-one, establish a one-to-one mapping relationship; when the matching flow layer path is one-to-many or many-to-one, establish a one-to-many or many-to-one mapping relationship and configure the proportion weight, and the proportion weight corresponds to the projection proportion relationship.

[0085] Furthermore, the system further includes an air flow deviation value determination unit to perform the following operation steps:

[0086] According to the process sewage discharge requirements, determine the air flow parameter requirements, and the air flow parameters include air flow velocity, direction, exhaust air volume, and target pressure; according to the matching streamline data, obtain the air flow velocity, direction, exhaust air volume, and air flow distribution, and calculate the pressure distribution according to the air flow velocity and air flow distribution; respectively use the air flow velocity, direction, exhaust air volume, and target pressure in the air flow parameter requirements and the air flow velocity, direction, exhaust air volume, and pressure distribution of the matching streamline data to calculate the difference value, and determine the air flow deviation value.

[0087] Furthermore, the system further includes an adjustment control parameter acquisition unit to perform the following operation steps:

[0088] Locate the abnormal process area according to the airflow deviation value, and based on the laminar flow distribution map, search for the streamline trajectory starting from the abnormal process area to obtain the deviation streamline trajectory, which has a cross-flow layer mark; according to the cross-flow layer mark, match the target airflow control parameters for abnormal adjustment, and at the same time, according to the cross-flow layer mark, identify the cross-influence process area through the laminar flow distribution map, and obtain the influence parameters and influence coefficients of the target airflow control parameters on the cross-influence process area; according to the deviation streamline trajectory and the mapping relationship between the wafer etching process and the laminar flow distribution, identify the neighborhood process area in the laminar flow distribution map, and search for the streamline trajectory of the neighborhood process area, which has an overlapping influence flow layer or an adjacent influence area mark; based on the overlapping influence flow layer or the adjacent influence area mark, identify the influence parameters and their influence coefficients of the abnormal process area and the neighborhood process area; establish a first objective function for the abnormal process area with the target airflow control parameters, establish a second objective function for the cross-influence process area and a third objective function for the neighborhood process area respectively with the influence parameters and their influence coefficients of the cross-influence process area and the neighborhood process area, and determine the adjustment allocation weight according to the process sensitivity of the abnormal process area, the cross-influence process area and the neighborhood process area, and use the adjustment allocation weight to fuse the first objective function, the second objective function and the third objective function to determine the fused objective function; aiming at maximizing the adjustment of the airflow deviation value and minimizing the influence on the neighborhood process area, perform global optimization through the fused objective function to obtain the adjustment control parameter, and the adjustment control parameter is the control parameter adjustment strategy with the largest calculation result of the fused objective function.

[0089] Through the foregoing detailed description of a method for ultra-clean control of a wafer etching environment in this specification, those skilled in the art can clearly know a ultra-clean control system for a wafer etching environment in this embodiment. Since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the description of the method part.

[0090] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to these embodiments shown herein, but will be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A super-clean control method for a wafer etching environment, characterized in that, The method includes: The connection control module obtains the laminar flow distribution of the ultra-clean space, constructs a laminar flow distribution map, and fits the streamline trajectory into the laminar flow distribution map, where the streamline is used to describe the air flow velocity, direction, and distribution. The faster the air flow velocity, the denser the streamline. The boundary width of the streamline distribution represents the air flow distribution, and the arrow represents the air flow direction; Obtain the process space distribution of wafer etching, perform coordinate mapping according to the position coordinates of the process space distribution and the laminar flow distribution map, and establish a mapping relationship between the wafer etching process and the laminar flow distribution; The control module reads the process sewage discharge requirements and air flow control parameters of wafer etching, uses the air flow control parameters to perform streamline fitting of each laminar flow in the laminar flow distribution map, and determines the matching streamline data of the wafer etching process area according to the mapping relationship; Match the matching streamline data with the process sewage discharge requirements to determine the air flow deviation value, and analyze the air flow control parameters according to the air flow deviation value to obtain adjustment control parameters, where the adjustment control parameters are used to adjust the air flow control parameters to meet the streamline data requirements of the process sewage discharge requirements; The step of performing coordinate mapping according to the position coordinates of the process space distribution and the laminar flow distribution map to establish a mapping relationship between the wafer etching process and the laminar flow distribution includes: Obtain the three-dimensional coordinates of the laminar flow distribution map; Determine multiple points in the area according to the process area of wafer etching, establish mapping points, and the mapping points have spatial position coordinates; Project the spatial position coordinates of the mapping points into the three-dimensional coordinates of the laminar flow distribution map to determine the matching flow layer path, and establish a mapping relationship between the matching flow layer path and the process area.

2. The ultra-clean control method for the wafer etching environment according to claim 1, wherein, The step of determining multiple points in the area according to the process area of wafer etching and establishing mapping points includes: Determine the process sensitivity of the process area, where the process sensitivity describes the influence degree of the process flow on the wafer etching quality; Configure the grid division unit according to the process sensitivity, where the higher the process sensitivity, the smaller the grid division unit; Divide the process area by using the grid division unit, and set the center point of each grid unit as the mapping point.

3. The ultra-clean control method for a wafer etching environment according to claim 2, characterized in that, Configuring the grid division unit according to the process sensitivity includes: Perform normalization processing on the process sensitivity so that the sensitivity of each process area is converted to between 0 and 1; According to a preset rule: , the grid division unit is calculated by using the sensitivity normalization value of the process area , where is the maximum size of the preset grid, corresponding to the maximum grid unit of the area with the lowest sensitivity, and S is the sensitivity normalization value of the process area.

4. The ultra-clean control method for a wafer etching environment according to claim 2, characterized in that, Projecting the spatial position coordinates of the mapping points into the three-dimensional coordinates of the laminar flow distribution map to determine the matching flow layer path includes: Obtain the projection ratio relationship between the spatial position coordinates and the flow layer path, and determine the matching flow layer path according to the projection ratio relationship. The matching flow layer path includes one-to-one, one-to-many, and many-to-one; When the matching flow layer path is one-to-one, establish a one-to-one mapping relationship; When the matching flow layer path is one-to-many or many-to-one, establish a one-to-many or many-to-one mapping relationship and configure the proportion weight, where the proportion weight corresponds to the projection ratio relationship.

5. The ultra-clean control method for the wafer etching environment according to claim 2, characterized in that Matching the matching streamline data with the process sewage discharge requirements to determine the air flow deviation value includes: According to the process sewage discharge requirements, determine the air flow parameter requirements, where the air flow parameters include air flow velocity, direction, exhaust air volume, and target pressure; According to the matched streamline data, obtain the air velocity, direction, exhaust air volume, and air flow distribution, and calculate the pressure distribution based on the air velocity and air flow distribution; Calculate the difference values between the air velocity, direction, exhaust air volume, target pressure in the air flow parameter requirements and the air velocity, direction, exhaust air volume, pressure distribution of the matched streamline data respectively to determine the air flow deviation value.

6. The ultra-clean control method for a wafer etching environment according to claim 5, characterized in that Perform the air flow control parameter analysis according to the air flow deviation value to obtain the adjustment control parameters, including: Locate the abnormal process area according to the air flow deviation value, and based on the laminar flow distribution map, search for the streamline trajectory starting from the abnormal process area to obtain the deviation streamline trajectory, which has a cross-flow layer mark; According to the cross-flow layer mark, match the target air flow control parameters for abnormal adjustment. At the same time, according to the cross-flow layer mark, identify the cross-influence process area through the laminar flow distribution map, and obtain the influence parameters and influence coefficients of the target air flow control parameters on the cross-influence process area; According to the deviation streamline trajectory and the mapping relationship between the wafer etching process and the laminar flow distribution, identify the neighborhood process area in the laminar flow distribution map, and search for the streamline trajectory of the neighborhood process area, which has an overlapping influence flow layer or an adjacent influence area mark; Based on the overlapping influence flow layer or adjacent influence area mark, identify the influence parameters and their influence coefficients of the abnormal process area and the neighborhood process area; Establish the first objective function of the abnormal process area with the target air flow control parameters, establish the second objective function of the cross-influence process area and the third objective function of the neighborhood process area with the influence parameters and their influence coefficients of the cross-influence process area and the neighborhood process area respectively, and determine the adjustment distribution weight according to the process sensitivity of the abnormal process area, cross-influence process area, and neighborhood process area, and use the adjustment distribution weight to fuse the first objective function, second objective function, and third objective function to determine the fused objective function; Aiming at maximizing the adjustment of the air flow deviation value and minimizing the influence on the neighborhood process area, perform global optimization through the fused objective function to obtain the adjustment control parameters, and the adjustment control parameters are the control parameter adjustment strategies with the largest calculation result of the fused objective function.

7. A super-clean control system for a wafer etching environment, characterized in that, For implementing the ultra-clean control method for a wafer etching environment according to any one of claims 1-6, the system includes: A laminar flow distribution map construction unit, which is used to connect to the control module to obtain the laminar flow distribution of the ultra-clean space, construct the laminar flow distribution map, and fit the streamline trajectory into the laminar flow distribution map, where the streamline is used to describe the air velocity, direction, and distribution. The faster the air velocity, the denser the streamline. The boundary width of the streamline distribution represents the air flow distribution, and the arrow represents the air flow direction; A mapping relationship establishment unit, which is used to obtain the process space distribution of wafer etching, perform coordinate mapping according to the position coordinates of the process space distribution and the laminar flow distribution map, and establish the mapping relationship between the wafer etching process and the laminar flow distribution; A matching streamline data determination unit, which is used to read the process sewage discharge requirements and air flow control parameters of wafer etching through the control module, perform streamline fitting on each laminar flow in the laminar flow distribution diagram by using the air flow control parameters, and determine the matching streamline data of the wafer etching process area according to the mapping relationship; An air flow control parameter analysis unit, which is used to match the air flow control parameters with the process sewage discharge requirements to determine the air flow deviation value, analyze the air flow control parameters according to the air flow deviation value, and obtain adjustment control parameters, and the adjustment control parameters are used to adjust the air flow control parameters to meet the streamline data requirements of the process sewage discharge requirements.

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