Microdisplay wafer and head-mounted display device

Abstract

The application relates to the display field and discloses a micro display wafer and a head-mounted display device. A display surface of the micro display wafer has a pixel array area, the pixel array area includes a display light-emitting area and an eye control device area, the eye control device area includes an infrared emission area and an infrared receiving area, and the micro display wafer includes: a plurality of display micro light-emitting diodes arranged in the display light-emitting area and used for image display; at least one infrared light source device located in the infrared emission area; and at least one infrared collection device located in the infrared receiving area. Infrared light emitted by the infrared light source device is received by the infrared collection device after being reflected by the human eye, so that the line of sight of the human eye is acquired. The micro display wafer integrates the device for acquiring the line of sight of the human eye into the micro display wafer for display, and the portability and high usability of components are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of display, in particular to a micro display wafer and a head-mounted display device. BACKGROUND

[0002] Micro Light Emitting Diode (Micro-LED) display wafer is considered to be the most suitable display module for head-mounted display device due to its high stability and high brightness.

[0003] Some head-mounted display devices need to have eye control function, and the eye control function is based on the acquisition of the line of sight of the human eye. At present, the line of sight of the human eye can be estimated by cooperation of infrared light source components and infrared receiving components with the human eye. In the prior art, the infrared light source components and the infrared receiving components for acquiring the line of sight of the human eye are arranged outside the micro display chip for display to obtain a component having eye control function and display function, but the volume of the component is large. SUMMARY

[0004] The present application provides a micro display wafer and a head-mounted display device, which integrates devices for acquiring the line of sight of the human eye in the micro display wafer for display, thereby improving the portability of the component.

[0005] In a first aspect, an embodiment of the present application provides a micro display wafer, a display surface of the micro display wafer having a pixel array region, the pixel array region including a display light emitting region and an eye control device region, the eye control device region including an infrared emission region and an infrared receiving region, the micro display wafer including: a plurality of display micro light emitting diodes arranged in the display light emitting region for image display; at least one infrared light source device located in the infrared emission region; and at least one infrared collection device located in the infrared receiving region, wherein the infrared light emitted by the infrared light source device is reflected by the human eye and then received by the infrared collection device for acquiring the line of sight of the human eye.

[0006] According to any one of the foregoing embodiments of the first aspect of the present application, the infrared emission region and the infrared receiving region are arranged adjacent to each other in each eye control device region.

[0007] According to any one of the foregoing embodiments of the first aspect of the present application, the micro display wafer further includes: an optical mixing component covering the infrared emission region and the infrared receiving region in each eye control device region, the optical mixing component being used for converging the infrared light emitted by the infrared light source device and dispersing the infrared light reflected by the human eye and then shining on the infrared collection device.

[0008] According to any one of the foregoing embodiments of the first aspect of the present application, the number of eye control device regions is two or more.

[0009] According to any one of the preceding embodiments of the first aspect of the present application, the eye control device region is located at an edge position of the pixel array region.

[0010] According to any one of the preceding embodiments of the first aspect of the present application, the eye control device region is located at a corner position of the pixel array region.

[0011] According to any one of the preceding embodiments of the first aspect of the present application, the infrared emission region and the infrared receiving region are separated by the display light emitting region.

[0012] According to any one of the preceding embodiments of the first aspect of the present application, the total area of the infrared emission region is greater than the total area of the infrared receiving region.

[0013] According to any one of the preceding embodiments of the first aspect of the present application, the micro display wafer further comprises: an infrared filter covering at least the infrared receiving region.

[0014] According to any one of the preceding embodiments of the first aspect of the present application, the pixel array region further comprises a light sensing region, and the micro display wafer further comprises: a plurality of light sensing devices arranged in the light sensing region, the plurality of light sensing devices being capable of acquiring an iris image of a human eye for iris recognition.

[0015] According to any one of the preceding embodiments of the first aspect of the present application, at least part of the light sensing devices are multiplexed as the infrared acquisition device.

[0016] In a second aspect, the embodiments of the present application provide a head-mounted display device comprising the micro display wafer according to any one of the preceding embodiments of the first aspect of the present application.

[0017] According to the micro display wafer of the embodiments of the present application, the display surface of the micro display wafer has a pixel array region, which comprises a display light emitting region and an eye control device region, the eye control device region comprising an infrared emission region and an infrared receiving region. Display micro light emitting diodes for image display are arranged in the display light emitting region. An infrared light source device is located in the infrared emission region, and an infrared acquisition device is located in the infrared receiving region. Infrared light emitted by the infrared light source device is received by the infrared acquisition device after being reflected by a human eye, for acquiring a line of sight of the human eye, which can be used to implement eye control function. Therefore, the infrared light source device and the infrared acquisition device for acquiring the line of sight of the human eye are integrated in the micro display wafer. The micro display wafer with both image display function and line of sight acquisition function of the human eye has smaller volume than a component obtained by arranging an infrared light source part and an infrared receiving part outside the micro display wafer, and improves the portability of the component, thereby facilitating the portability and high usability of the head-mounted display device. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the accompanying drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced. Obviously, the accompanying drawings in the following description only show some embodiments of the present application, and for those skilled in the art, other drawings can be obtained from the structures shown in the drawings without creative labor.

[0019] Figure 1 is a top view of a first embodiment of a micro display wafer of the present application;

[0020] Figure 2 is a cross-sectional view of the first embodiment of the micro display wafer of the present application;

[0021] Figure 3 is a side view of the first embodiment of the micro display wafer of the present application;

[0022] Figure 4 is a top view of a second embodiment of a micro display wafer of the present application;

[0023] Figure 5 is a top view of a third embodiment of a micro display wafer of the present application;

[0024] Figure 6 is a top view of a fourth embodiment of a micro display wafer of the present application;

[0025] Figure 7 is a side view of the fourth embodiment of the micro display wafer of the present application;

[0026] Figure 8 is a top view of a fifth embodiment of a micro display wafer of the present application;

[0027] Figure 9 is a cross-sectional view of the fifth embodiment of the micro display wafer of the present application.

[0028] The implementation, functional features and advantages of the present application will be further described with reference to the embodiments and the accompanying drawings. DETAILED DESCRIPTION

[0029] The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0030] It should be noted that all directional indications in the embodiments of this application, such as up, down, left, right, front, back, etc., are only used to explain the relative positional relationship and movement of the components in a specific posture as shown in the attached figures. If the specific posture changes, the directional indications will also change accordingly. When describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above another layer or region, or that it contains other layers or regions between it and another layer or region. Furthermore, if the component is flipped, the layer or region will be located "below" or "under" another layer or region.

[0031] Furthermore, the descriptions using terms such as "first," "second," etc., in this application are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. The terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. Additionally, the technical solutions of the various embodiments can be combined with each other, but this must be based on what a person skilled in the art can implement. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed in this application.

[0032] This application provides a microdisplay chip. Figure 1 This is a top view schematic diagram of the first embodiment of the microdisplay chip of this application. In this document, "microdisplay chip" refers to a display component that mainly uses micro light-emitting diodes (Micro-LEDs) as light-emitting pixels.

[0033] In this document, "micro" light-emitting diodes and other "micro" devices refer to the size of the light-emitting diodes and devices. In some embodiments, the term "micro" refers to the size of the device on the scale of 1 micrometer to 100 micrometers. However, it is understood that the embodiments of this application are not limited thereto, and certain aspects of the embodiments can be applied to larger or smaller sizes.

[0034] The display surface of the micro display wafer 100 has a pixel array area A1, which includes a display light emitting area A11 and an eye control device area A12, and the eye control device area A12 includes an infrared emitting area A121 and an infrared receiving area A122.

[0035] The micro display wafer 100 includes a plurality of display micro light emitting diodes 110, at least one infrared light source device 120, and at least one infrared acquisition device 130. The plurality of display micro light emitting diodes 110 are arranged in the display light emitting area A11 and are used for image display. The at least one infrared light source device 120 is located in the infrared emitting area A121. The at least one infrared acquisition device 130 is located in the infrared receiving area A122. The infrared light emitted by the infrared light source device 120 is reflected by the human eye and then received by the infrared acquisition device 130, so as to obtain the line of sight of the human eye.

[0036] The line of sight of the human eye is obtained, for example, based on the corneal reflection, taking the eye corner point or the corneal reflection point (Purkinje spot) as the reference point of the eye movement, and the line of sight is estimated by analyzing the mapping relationship between the vector composed of the eye corner or the corneal reflection point and the pupil center position and the line of sight vector, so as to obtain the line of sight of the human eye, so as to realize the eye control function.

[0037] According to the micro display wafer 100 of the embodiment of the present application, the display surface of the micro display wafer 100 has a pixel array area A1, which includes a display light emitting area A11 and an eye control device area A12, and the eye control device area A12 includes an infrared emitting area A121 and an infrared receiving area A122. The display micro light emitting diodes 110 used for image display are arranged in the display light emitting area A11. The infrared light source device 120 is located in the infrared emitting area A121, and the infrared acquisition device 130 is located in the infrared receiving area A122. The infrared light emitted by the infrared light source device 120 is reflected by the human eye and then received by the infrared acquisition device 130, so as to obtain the line of sight of the human eye, and the line of sight of the human eye can be used to realize the eye control function. Therefore, the infrared light source device 120 and the infrared acquisition device 130 used for obtaining the line of sight of the human eye are integrated in the micro display wafer 100. The micro display wafer 100 having both the image display function and the line of sight acquisition function of the human eye has a smaller volume than the assembly obtained by arranging the infrared light source component and the infrared receiving component outside the micro display chip, and the portability of the component is improved, so that the portability and the high usability of the head-mounted display device are more easily realized.

[0038] In the embodiments of the present application, the shape of the pixel array area A1 can be set as needed. The array shape of the display micro light emitting diodes 110 can be set as needed. In some embodiments, each display micro light emitting diode 110 is rectangular, in some embodiments, each display micro light emitting diode 110 is hexagonal, and in some other embodiments, each display micro light emitting diode 110 can be of other shapes.

[0039] Figure 2 A cross-sectional view of a first embodiment of a micro display wafer of the present application is shown. In some embodiments, the micro display wafer 100 includes a circuit substrate 140 having a circuit structure inside. The display micro light emitting diodes 110, the infrared light source device 120, and the infrared acquisition device 130 are formed on the side of the display surface of the circuit substrate 140. In some embodiments, the display micro light emitting diodes 110 are electrically connected to the circuit structure inside the circuit substrate 140 through first vias H1, the infrared light source device 120 is electrically connected to the circuit structure inside the circuit substrate 140 through second vias H2, and the infrared acquisition device 130 is electrically connected to the circuit structure inside the circuit substrate 140 through third vias H3.

[0040] The circuit structure can include a light emitting driving circuit and an infrared acquisition circuit. The display micro light emitting diodes 110 and the infrared light source device 120 are electrically connected to the light emitting driving circuit, and the infrared acquisition device 130 is electrically connected to the infrared acquisition circuit. In some embodiments, the light emitting driving circuit and the infrared acquisition circuit are both complementary metal oxide semiconductor (CMOS) circuits.

[0041] In the present embodiment, the display micro light emitting diodes 110 are colored light Micro-LEDs, such as red Micro-LEDs, green Micro-LEDs, and blue Micro-LEDs. In the present embodiment, the infrared acquisition device 130 is an infrared Micro-LED. In the present embodiment, the infrared acquisition device 130 is a photodiode.

[0042] The infrared acquisition device 130 can convert optical signals into electrical signals. The infrared acquisition device 130 converts the collected infrared light stimulus into an electrical signal, which is transmitted to the infrared acquisition circuit through the third via H3 and stored by the peripheral storage circuit for subsequent analysis and use.

[0043] In some embodiments, a single infrared light source device 120 is provided in each infrared emission area A121, and a single infrared acquisition device 130 is provided in each infrared receiving area A122. In some embodiments, multiple infrared light source devices 120 are provided in each infrared emission area A121, and multiple infrared acquisition devices 130 are provided in each infrared receiving area A122.

[0044] The number of eye control device areas A12 can be one or more.

[0045] As Figure 1 In some embodiments, the infrared emission area A121 and the infrared receiving area A122 are arranged adjacent to each other in each eye control device area A12.

[0046] In some embodiments, the number of eye control device areas A12 is more than two. As Figure 1 For example, in the present embodiment, the number of eye control device areas A12 is four.

[0047] In some embodiments, the eye control device area A12 is located at an edge position of the pixel array area A1, for example, at a side position or a corner position of the pixel array area A1. In the present embodiment, the eye control device area A12 is located at a corner position of the pixel array area A1. In the present embodiment, the pixel array area A1 is rectangular, and the four eye control device areas A12 are located at the four corner positions of the pixel array area A1.

[0048] Figure 3 FIG. 1 is a side view of a micro display wafer according to a first embodiment of the present application. In some embodiments, the micro display wafer 100 further comprises an optical mixing component 150. The optical mixing component 150 covers the infrared emission area A121 and the infrared receiving area A122 in each eye control device area A12. The optical mixing component 150 is used to converge the infrared light emitted by the infrared light source device 120 and to disperse the infrared light reflected by the human eye E1 to the infrared acquisition device 130.

[0049] The optical mixing component 150 comprises at least one micro lens. The optical mixing component 150 converges the infrared light emitted by the infrared light source device 120, and the shape of the optical mixing component 150 can be set to change the emission direction of the infrared light emitted by the infrared light source device 120 after passing through the optical mixing component 150, thereby increasing the proportion of infrared light entering the human eye E1. In addition, when the infrared light enters the human eye E1 and is reflected, the reflected infrared light can also be dispersed by the optical mixing component 150 and enter the infrared acquisition device 130.

[0050] In some embodiments, the micro display wafer 100 further comprises an infrared filter, which covers at least the infrared receiving area A122. The infrared filter can filter out external ambient light and resist the interference of external ambient light on the infrared acquisition device 130.

[0051] In some embodiments, the total area of the infrared emission area A121 is equal to the total area of the infrared receiving area A122.

[0052] In some embodiments, the total area of the infrared emitting region A121 is larger than the total area of the infrared receiving region A122, so as to increase the intensity of the infrared light emitted by the infrared light source device 120, and further to increase the sensitivity of the whole module.

[0053] In the above first embodiment, the infrared emitting region A121 and the infrared receiving region A122 are arranged adjacently in each eye control device region A12. The four eye control device regions A12 are arranged at the four corner positions of the pixel array region A1, and the four eye control device regions A12 are spaced apart from each other. In other embodiments, the eye control device region A12 can be arranged in other forms.

[0054] Figure 4 FIG. 4 is a top view of a second embodiment of the micro display wafer. In the second embodiment, the number of eye control device regions A12 is more than two, for example, four. In the second embodiment, the more than two eye control device regions A12 are arranged adjacently in sequence. For example, the four eye control device regions A12 are arranged adjacently in sequence and are located at one corner position of the pixel array region A1. The infrared emitting region A121 and the infrared receiving region A122 are arranged adjacently in each eye control device region A12.

[0055] Figure 5 FIG. 5 is a top view of a third embodiment of the micro display wafer. In the third embodiment, the number of eye control device regions A12 is more than two, for example, four. In the third embodiment, part of the number of eye control device regions A12 are arranged adjacently in sequence, and part of the number of eye control device regions A12 are spaced apart from each other. For example, the four eye control device regions A12 are divided into two groups, each group including two eye control devices arranged adjacently. The two groups of eye control devices are arranged at opposite ends of one side of the pixel array region A1. The infrared emitting region A121 and the infrared receiving region A122 are arranged adjacently in each eye control device region A12.

[0056] In some embodiments, the infrared emitting region A121 and the infrared receiving region A122 can not be arranged adjacently. Figure 6 FIG. 6 is a top view of a fourth embodiment of the micro display wafer. In the fourth embodiment, the infrared emitting region A121 and the infrared receiving region A122 are spaced apart by the display light emitting region A11. In the present embodiment, the infrared emitting region A121 and the infrared receiving region A122 are respectively located at the edge positions of the pixel array region A1, for example, at the side positions or the corner positions of the pixel array region A1. In the present embodiment, the infrared emitting region A121 and the infrared receiving region A122 are respectively located at the corner positions of the pixel array region A1. In the present embodiment, the pixel array region A1 is rectangular, and the infrared emitting region A121 and the infrared receiving region A122 are respectively located at different corner positions of the pixel array region A1.

[0057] Figure 7FIG. 4 is a side view schematic diagram of a fourth embodiment of the micro display wafer of the present application. When the micro display wafer 100 is used in a head-mounted display device, the head-mounted display device can further include an optical machine 200. The infrared light emitted from the infrared light source device 120 enters the human eye E1 through the optical machine 200, and then enters the infrared collection device 130 through the optical machine 200 after being reflected by the human eye E1.

[0058] Figure 8 、 Figure 9 FIG. 5 is a top view schematic diagram and a cross-sectional view schematic diagram of a fifth embodiment of the micro display wafer of the present application. The display surface of the micro display wafer 100 has a pixel array area A1, which includes a display light emitting area A11 and an eye control device area A12, and the eye control device area A12 includes an infrared emission area A121 and an infrared receiving area A122. In some embodiments, the pixel array area A1 further includes a photosensitive area A13.

[0059] The micro display wafer 100 includes a plurality of display micro light emitting diodes 110, at least one infrared light source device 120, and at least one infrared collection device 130. The plurality of display micro light emitting diodes 110 are arranged in the display light emitting area A11 and are used for image display. The at least one infrared light source device 120 is located in the infrared emission area A121. The at least one infrared collection device 130 is located in the infrared receiving area A122. The infrared light emitted by the infrared light source device 120 is received by the infrared collection device 130 after being reflected by the human eye, so as to obtain the line of sight of the human eye. In this embodiment, the micro display wafer 100 further includes a plurality of photosensitive devices 170. The plurality of photosensitive devices 170 are arranged in the photosensitive area A13. The plurality of photosensitive devices 170 can obtain the human eye iris image for iris recognition.

[0060] The photosensitive device 170 is, for example, a photosensitive element sensitive to infrared light. The cornea, iris and pupil in the human eye have different absorption and reflection of infrared rays. Each person's iris contains unique texture information, which remains unchanged throughout life, making the iris a highly reliable biometric feature. The plurality of photosensitive devices 170 can obtain the human eye iris image, which can be used as biometric data.

[0061] According to the micro display wafer 100 of the above-mentioned embodiments, the photosensitive device 170 for obtaining the human eye iris image for iris recognition is arranged in the photosensitive area A13. The micro display wafer 100 integrates the photosensitive device 170 for iris recognition in the micro display wafer 100 for display, thereby further improving the integration of the micro display wafer 100, realizing more functions while occupying less volume, and improving the portability of the components, thereby facilitating the portability of the head-mounted display device.

[0062] In some embodiments, the number of the light sensing devices 170 is more than 200 to ensure the iris recognition accuracy.

[0063] In some embodiments, the light sensing region A13 is arranged around the display light emitting region A11.

[0064] In some embodiments, the light sensing region A13 is located at the edge of the pixel array region A1.

[0065] In the embodiment, the display light emitting region A11 is located at the center of the pixel array region A1, and the light sensing region A13 completely surrounds the display light emitting region A11.

[0066] As Figure 9 In some embodiments, the micro display wafer 100 further includes a circuit substrate 140. The circuit substrate 140 has a circuit structure inside, and the circuit structure further includes a light sensing driving circuit. The light sensing device 170 is electrically connected to the light sensing driving circuit through the fourth via hole H4.

[0067] In some embodiments, at least part of the light sensing device 170 is multiplexed as the infrared acquisition device 130. For example, as Figure 8 In the fifth embodiment, all the infrared acquisition devices 130 can be multiplexed by the light sensing device 170, that is, at least part of the light sensing device 170 is multiplexed as the infrared acquisition device 130, so as to further improve the utilization rate of the devices on the micro display wafer 100.

[0068] The embodiments of the present application further provide a head-mounted display device, which includes the micro display wafer 100 of any of the foregoing embodiments. The head-mounted display device can be an augmented reality (AR) head-mounted display device, a virtual reality (VR) head-mounted display device, or a mixed reality (MR) head-mounted display device.

[0069] The display surface of the micro display wafer 100 has a pixel array region A1, which includes a display light emitting region A11 and an eye control device region A12, and the eye control device region A12 includes an infrared emitting region A121 and an infrared receiving region A122.

[0070] The micro display wafer 100 includes a plurality of display micro light emitting diodes 110, at least one infrared light source device 120, and at least one infrared acquisition device 130. The plurality of display micro light emitting diodes 110 are arranged in the display light emitting region A11 and are used for image display. The at least one infrared light source device 120 is located in the infrared emitting region A121. The at least one infrared acquisition device 130 is located in the infrared receiving region A122. The infrared light emitted by the infrared light source device 120 is reflected by the human eye and then received by the infrared acquisition device 130, so as to obtain the line of sight of the human eye.

[0071] According to the head-mounted display device provided by the embodiment of the present application, the head-mounted display device comprises a micro display wafer 100, a display surface of the micro display wafer 100 has a pixel array area A1, the pixel array area A1 comprises a display light-emitting area A11 and an eye control device area A12, the eye control device area A12 comprises an infrared light-emitting area A121 and an infrared light-receiving area A122. The display micro light-emitting diodes 110 for image display are arranged in the display light-emitting area A11. The infrared light source device 120 is located in the infrared light-emitting area A121, and the infrared light collector 130 is located in the infrared light-receiving area A122. The infrared light emitted by the infrared light source device 120 is reflected by the human eye and then received by the infrared light collector 130, so as to obtain the line of sight of the human eye, and the line of sight of the human eye can be used to realize the eye control function. Therefore, the infrared light source device 120 and the infrared light collector 130 for obtaining the line of sight of the human eye are integrated in the micro display wafer 100. The micro display wafer 100 having both the image display function and the line of sight acquisition function of the human eye has a smaller volume than the assembly obtained by arranging the infrared light source component and the infrared receiving component outside the micro display chip, and the portability of the components is improved, so that the portability and the high usability of the head-mounted display device are more easily realized.

[0072] The embodiment of the present application further provides a manufacturing method of the micro display wafer 100, for example, a manufacturing method of the micro display wafer 100 of some of the foregoing embodiments. In the embodiment, the manufacturing method of the micro display wafer 100 comprises steps S110 to S140.

[0073] In step S110, a circuit substrate 140 is provided, and the circuit substrate 140 has a circuit structure inside. In some embodiments, the circuit structure comprises a light-emitting driving circuit and an infrared light collecting circuit. Both the light-emitting driving circuit and the infrared light collecting circuit are CMOS circuits.

[0074] In some embodiments, the circuit substrate 140 further comprises a first via hole H1, a second via hole H2 and a third via hole H3. The first via hole H1 and the second via hole H2 are connected to the light-emitting driving circuit, and the third via hole H3 is connected to the infrared light collecting circuit.

[0075] The circuit substrate 140 has a pixel array area A1, the pixel array area A1 comprises a display light-emitting area A11 and an eye control device area A12, and the eye control device area A12 comprises an infrared light-emitting area A121 and an infrared light-receiving area A122.

[0076] In step S120, a plurality of display micro light-emitting diodes 110 are formed in the display light-emitting area A11 of the circuit substrate 140. The plurality of display micro light-emitting diodes 110 are used for image display.

[0077] In some embodiments, the plurality of display micro-LEDs 110 are formed on the display light emitting area A11 of the circuit substrate 140 by a monolithic bonding process.

[0078] In step S130, the infrared light source device 120 is formed on the infrared emitting area A121 of the circuit substrate 140.

[0079] In an alternative implementation, the infrared light source device 120 is formed on the infrared emitting area A121 of the circuit substrate 140 by a mass transfer process, and the infrared light source device 120 is a Micro-LED.

[0080] In an alternative implementation, the infrared light source device 120 can also be formed on the infrared emitting area A121 of the circuit substrate 140 by a monolithic bonding process.

[0081] In an alternative implementation, a first micro-LED can be formed on the infrared emitting area A121 of the circuit substrate 140 first, and then a color conversion layer is formed on the first micro-LED to convert the light emitted by the first micro-LED into infrared light. Alternatively, the formation of the first micro-LED on the infrared emitting area A121 of the circuit substrate 140 can be performed synchronously with step S120.

[0082] Optionally, after step S130, step S140 is further included. In step S140, a conductive member is grown at the infrared light source device 120, so that the chip height of the infrared light source device 120 after the growth of the conductive member is the same as the chip height of the display micro-LED 110; and the two sides of the infrared light source device 120 are passivated by an insulating material. The conductive member can be a conductive metal, such as one or more of Al, Au, Pt, and Pt.

[0083] In step S150, the infrared collection device 130 is formed on the infrared receiving area A122 of the circuit substrate 140.

[0084] In some embodiments, the infrared collection device 130 is formed on the infrared receiving area A122 of the circuit substrate 140 by a monolithic bonding process.

[0085] Thereafter, the method for manufacturing the micro-display wafer 100 can further include other steps known in the art, such as a step of forming a common electrode, and other module process steps.

[0086] According to the manufacturing method of the micro display wafer 100, the micro display wafer 100 obtained has a pixel array area A1, the pixel array area A1 includes a display light emitting area A11 and an eye control device area A12, the eye control device area A12 includes an infrared emitting area A121 and an infrared receiving area A122. The display micro light emitting diode 110 for image display is arranged in the display light emitting area A11. The infrared light source device 120 is located in the infrared emitting area A121, and the infrared collection device 130 is located in the infrared receiving area A122. The infrared light emitted by the infrared light source device 120 is reflected by the human eye E1 and then received by the infrared collection device 130, so as to obtain the line of sight of the human eye E1, and the line of sight of the human eye E1 can be used to realize the eye control function. Therefore, the infrared light source device 120 and the infrared collection device 130 for obtaining the line of sight of the human eye E1 are integrated in the micro display wafer 100. The micro display wafer 100 with the functions of image display and line of sight acquisition of the human eye E1 has smaller volume than the assembly obtained by arranging the infrared light source device and the infrared receiving device outside the micro display wafer, and improves the portability of the components, so as to facilitate the portability of the head-mounted display device.

[0087] The above description is only the preferred embodiment of the present application, and does not limit the patent scope of the present application. Any equivalent structural transformation, direct / indirect application in other related technical fields based on the content of the present application and the drawings is included in the patent protection scope of the present application.

Claims

1. A microdisplay wafer, characterized by, The display surface of the micro display wafer has a pixel array region, which includes a display light emitting region and an eye control device region, the eye control device region includes an infrared emitting region and an infrared receiving region, the micro display wafer includes: a plurality of display micro light emitting diodes arranged in the display light emitting region for image display; at least one infrared light source device located in the infrared emitting region; at least one infrared collection device located in the infrared receiving region, the infrared light emitted by the infrared light source device is received by the infrared collection device after being reflected by the human eye for obtaining the line of sight of the human eye; an optical mixing component covering the infrared emitting region and the infrared receiving region in each eye control device region, the optical mixing component includes at least one microlens, and the optical mixing component is used for converging the infrared light emitted by the infrared light source device and dispersing the infrared light reflected by the human eye and shining on the infrared collection device.

2. The microdisplay wafer of claim 1, wherein, The infrared emitting region and the infrared receiving region are arranged adjacent to each other in each eye control device region.

3. The microdisplay wafer of claim 1, wherein, The eye control device region is located at the edge position of the pixel array region.

4. The microdisplay wafer of claim 1, wherein, The infrared emitting region and the infrared receiving region are separated by the display light emitting region.

5. The microdisplay wafer of claim 1, wherein, The total area of the infrared emitting region is greater than the total area of the infrared receiving region.

6. The microdisplay wafer of claim 1, wherein, Further comprising: an infrared filter covering at least the infrared receiving region.

7. The microdisplay wafer of claim 1, wherein, The pixel array region further includes a photosensitive region, and the micro display wafer further includes: a plurality of photosensitive devices arranged in the photosensitive region, the plurality of photosensitive devices can obtain human eye iris images for iris recognition.

8. The microdisplay wafer of claim 7, wherein, At least part of the photosensitive devices are multiplexed as the infrared collection device.

9. A head-mounted display device, characterized by The micro display wafer as claimed in any one of claims 1 to 8.

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