Semiconductor processing technology method and semiconductor device

Abstract

The invention discloses a semiconductor processing technology method and a semiconductor device. The semiconductor processing technology method comprises the following steps: forming a patterned mask layer with a mask opening on a substrate; performing an evaporation process to form a metal material layer on the substrate and the patterned mask layer, the metal material layer comprising a metal pattern formed on the substrate exposed by the mask opening and a sacrificial metal part formed on the patterned mask layer; the patterned mask layer and the sacrificial metal part are removed, an evaporation process is carried out in an evaporation time period, in the evaporation process, the substrate on which the patterned mask layer is formed is placed on a bearing disc of evaporation equipment, the substrate rotates along with rotation of the bearing disc, and the evaporation time period comprises a first time period and a second time period; the bearing disc rotates in a first rotation direction in a first time period and rotates in a second rotation direction opposite to the first rotation direction in a second time period. According to the semiconductor processing technology method, the morphology of the formed metal pattern can be improved.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to the field of semiconductor technology, and in particular, to a semiconductor processing method and a semiconductor device. Background Art

[0002] In the process of manufacturing semiconductor devices, evaporation is a common coating process, which can be used to deposit metal and other material layers. For example, evaporation and lift-off processes can be used to manufacture metal patterns, and the morphology of metal patterns may directly affect the performance of semiconductor devices. Therefore, how to form metal patterns with better morphology during evaporation is an important research topic in this field. Summary of the invention

[0003] According to at least one embodiment of the present disclosure, a semiconductor processing method is provided, comprising: providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer having a mask opening to expose a portion of the surface of the substrate; performing an evaporation process to form a metal material layer on the substrate and the patterned mask layer, the metal material layer comprising a metal pattern formed on the substrate exposed by the mask opening and a sacrificial metal portion formed on a side of the patterned mask layer away from the substrate; and removing the patterned mask layer and the sacrificial metal portion, wherein the evaporation process is performed during an evaporation time period, and in the evaporation process, the substrate formed with the patterned mask layer is placed on a carrier disk of an evaporation device, and the substrate rotates as the carrier disk rotates, wherein the evaporation time period comprises a first time period and a second time period, the carrier disk rotates along a first rotation direction during the first time period, and rotates along a second rotation direction during the second time period, and the second rotation direction is opposite to the first rotation direction.

[0004] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the first rotation direction is one of a clockwise direction and a counterclockwise direction, and the second rotation direction is the other of the clockwise direction and the counterclockwise direction.

[0005] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the evaporation time period includes one or more of the first time periods and one or more of the second time periods, and the first time periods and the second time periods are alternately arranged.

[0006] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the number of one or more first time periods is the same as the number of one or more second time periods; and / or the total time length of the one or more first time periods is the same as the total time length of the one or more second time periods.

[0007] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the metal pattern is a single-layer structure with a target thickness, and the evaporation process includes a first sub-evaporation process and a second sub-evaporation process, the first sub-evaporation process deposits a metal material of a first thickness in a first time period, then changes the rotation direction of the carrier plate, and performs the second sub-evaporation process in a second time period to deposit a metal material of a second thickness; the first sub-evaporation process and the second sub-evaporation process are performed alternately, and the overall thickness of the metal material layer finally formed reaches the target thickness.

[0008] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the first thickness and the second thickness are equal.

[0009] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the first thickness and the second thickness are each equal to 1 / N of the target thickness, and N is an even number.

[0010] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the metal pattern is a multi-layer structure and includes multiple metal sub-layers. The evaporation process includes multiple metal evaporation processes using multiple metal evaporation sources respectively, and the multiple metal sub-layers are formed by the multiple metal evaporation processes respectively. After switching the metal evaporation source, the evaporation process changes the rotation direction of the carrier plate.

[0011] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the multiple metal sublayers include a first metal sublayer and a second metal sublayer, the material of the first metal sublayer is different from the material of the second metal sublayer, and the first metal sublayer is formed by a first metal evaporation process in the first time period, and the second metal sublayer is formed by a second metal evaporation process in the second time period.

[0012] In a semiconductor processing method provided according to at least one embodiment of the present disclosure, in the first time period, the evaporation source used in the evaporation process has a first evaporation distance from the substrate, and metal deposition is performed on the substrate at a first evaporation angle; in the second time period, the evaporation source used in the evaporation process has a second evaporation distance from the substrate, and metal deposition is performed on the substrate at a second evaporation angle; wherein the first evaporation distance is the same as the second evaporation distance, and / or the first evaporation angle is the same as the second evaporation angle.

[0013] According to at least one embodiment of the present disclosure, a semiconductor device is provided, which is formed by the above-mentioned semiconductor processing method and includes: the substrate; and the metal pattern, which is located on the substrate, wherein the metal pattern is a symmetrical figure; or the metal pattern has a first side wall and a second side wall opposite to each other in a direction parallel to the main surface of the substrate, a first angle is formed between the first side wall and the main surface of the substrate, a second angle is formed between the second side wall and the main surface of the substrate, and the difference between the first angle and the second angle ranges from 0 to 2°; or the ratio of the difference between the first angle and the second angle to the average value of the first angle and the second angle ranges from 0 to 2%.

[0014] The semiconductor processing method according to the embodiment of the present disclosure can improve the morphology of the formed metal pattern, obtain a more symmetrical pattern morphology, and further improve the device performance of the formed semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, but are not intended to limit the present disclosure.

[0016] Figure 1 A schematic diagram of an evaporation apparatus is shown.

[0017] Figure 2 Show use Figure 1 The evaporation device shown is a schematic cross-sectional view of a metal pattern formed on a substrate through an evaporation process and a lift-off process.

[0018] Figure 3 A schematic cross-sectional view of an evaporation apparatus according to some embodiments of the present disclosure is shown.

[0019] Figure 4 Schematic cross-sectional views showing evaporation devices according to other embodiments of the present disclosure.

[0020] Figure 5 A schematic cross-sectional view showing a structure of a first step in a semiconductor processing method according to some embodiments of the present disclosure.

[0021] Figure 6 A schematic cross-sectional view showing a structure of a second step in a semiconductor processing method according to some embodiments of the present disclosure.

[0022] Figure 7 A schematic cross-sectional view showing a structure of a third step in a semiconductor processing method according to some embodiments of the present disclosure.

[0023] Figure 8A schematic cross-sectional view showing a structure of a fourth step in a semiconductor processing method according to some embodiments of the present disclosure.

[0024] Fig.9A Schematic cross-sectional views showing a substrate and a metal pattern in a semiconductor device according to some embodiments of the present disclosure.

[0025] Fig. 9B Schematic cross-sectional views showing substrates and metal patterns in semiconductor devices according to other embodiments of the present disclosure.

[0026] Fig.10 A schematic flow chart of a semiconductor processing method according to some embodiments of the present disclosure is shown.

[0027] Fig.11 A picture showing a metal pattern formed on a substrate in an experimental example.

[0028] Fig.12 A picture showing a metal pattern formed on a substrate by a semiconductor processing method according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0030] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. "First", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.

[0031] Figure 1 A schematic diagram showing an evaporation device; Figure 2 Show use Figure 1 The evaporation device shown is a schematic cross-sectional view of a metal pattern formed on a substrate through an evaporation process and a lift-off process.

[0032] refer to Figure 1 In some embodiments, the evaporation device includes a planetary disk 1, a carrier disk 2, and an evaporation source 3. The carrier disk 2 is connected to the planetary disk 1 and is used to carry the wafer 10. The carrier disk 2 and the wafer 10 carried by it can rotate with the rotation of the planetary disk 1. The evaporation source 3 is placed under the carrier disk 2 and is configured to provide target metal to the wafer 10 during the evaporation process.

[0033] For example, the evaporation device may be an electron beam evaporation device. During the evaporation process, an electron beam is used to heat a metal evaporation source (or metal target) to vaporize the metal evaporation source into metal vapor. The metal vapor reaches the wafer surface and condenses to form a metal film.

[0034] During the evaporation process, the carrier plate 2 and the wafer 10 carried by it rotate with the rotation of the planetary plate 1, for example, they can rotate clockwise along the rotation direction 5 shown in the figure; rotating the carrier plate during the evaporation process can improve the uniformity of the film layer formed by deposition. However, if the carrier plate continues to rotate in a single direction during the entire evaporation process, the formed metal pattern may have an asymmetric morphology, which may adversely affect the performance of the device.

[0035] Figure 2 The schematic diagram shows a metal pattern 11 formed on a wafer 10 when a carrier plate rotates in one direction during an evaporation process.

[0036] like Figure 2 As shown, since the carrier plate continuously rotates in one direction during the evaporation process, the metal pattern 11 has an asymmetric morphology, such as tilting toward the right side in the figure. For example, the metal pattern 11 has a first metal sidewall 11a and a second metal sidewall 11b, and the first metal sidewall 11a has a first sidewall angle 7 with the main surface of the wafer 10, and the second metal sidewall 11b has a second sidewall angle 8 with the main surface of the wafer 10; the first sidewall angle 7 and the second sidewall angle 8 have a large difference, such as a difference of about 3° or more. For example, in some examples, the first sidewall angle 7 is about 78°, and the second sidewall angle 8 is about 81°. In this example, the metal pattern 11 has a poor morphology, which may affect the performance of the formed semiconductor device.

[0037] Figure 3 and Figure 4 A schematic cross-sectional view of an evaporation apparatus according to some embodiments of the present disclosure is shown.

[0038] Figure 3 and Figure 4 The evaporation device 50 shown is Figure 1The evaporation device shown is similar, except that the evaporation device 50 is configured so that its carrier plate rotates in different rotation directions in multiple time periods of the evaporation process, and the rotation directions of the planetary plate and the carrier plate in the evaporation device 50 can be set and controlled, for example, by a computer program.

[0039] For example, the evaporation device 50 includes a planetary disk 1, a carrier disk 2, and an evaporation source 3. The planetary disk 1 is configured to rotate along a first rotation direction 201 or a second rotation direction 202. The carrier disk 2 is fixedly connected to the planetary disk 1 and is configured to carry a substrate 100. The evaporation source 3 is disposed on a side of the carrier disk 2 away from the planetary disk 1, and is disposed opposite to the substrate 100, and is configured to be heated during the evaporation process to form a material vapor, for example, to form an evaporation beam 3a shown in the figure, wherein the material vapor (for example, metal vapor) evaporates to the surface of the substrate 100, and condenses on the surface of the substrate to deposit to form a film layer.

[0040] The substrate 100 is a substrate to be coated and is fixed on the carrier plate 2 during the evaporation process. In some embodiments, one or more carrier plates 2 may be connected to the planetary plate 1, and each carrier plate 2 may carry one or more substrates to be coated.

[0041] For example, Figure 3 As shown, in some examples, a single carrier plate 2 is connected to the planetary disk 1, and a plurality of substrates 100 to be coated are carried on the carrier plate 2. In this example, the carrier plate 2 may be located directly above the evaporation source 3 in the first direction D1, and the main surfaces of the carrier plate 2 and the substrate 100 may extend in a direction parallel to the main surface of the planetary disk or the evaporation source (for example, a horizontal direction including the second direction D2). The second direction D2 intersects with the first direction D1, for example, they are substantially perpendicular to each other. For example, the first direction D1 is a direction substantially perpendicular to the main surface of the planetary disk or the evaporation source.

[0042] For example, Figure 4 As shown, in other examples, a plurality of carrier plates 2 are connected to the planetary disk 1, and each carrier plate 2 carries a plurality of substrates 100 to be coated. In this example, the carrier plates 2 may be connected to the planetary disk 1 at an angle; for example, the extension direction of the main surface of the carrier plate 2 and the substrate 100 may intersect with the extension direction of the main surface of the planetary disk 1 or the evaporation source 3. Arranging a plurality of carrier plates on the planetary disk 1 for the evaporation process can improve the production capacity, and the inclined arrangement of the plurality of carrier plates can help save space, and the coating can be deposited on the plurality of substrates on the carrier plates.

[0043] It should be understood that Figure 3 and Figure 4 The number of carrier plates connected to the planetary plates and the number of substrates carried on each carrier plate shown in the figure are for illustration only, and the present disclosure is not limited thereto.

[0044] The embodiment of the present disclosure provides a semiconductor processing method, comprising: providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer having a mask opening to expose a portion of the surface of the substrate; performing an evaporation process to form a metal material layer on the substrate and the patterned mask layer, the metal material layer comprising a metal pattern formed on the substrate exposed by the mask opening and a sacrificial metal portion formed on a side of the patterned mask layer away from the substrate; and removing the patterned mask layer and the sacrificial metal portion, wherein the evaporation process is performed during an evaporation time period, and in the evaporation process, the substrate formed with the patterned mask layer is placed on a carrier disk of an evaporation device, and the substrate rotates as the carrier disk rotates, wherein the evaporation time period comprises a first time period and a second time period, the carrier disk rotates along a first rotation direction during the first time period, and rotates along a second rotation direction during the second time period, and the second rotation direction is opposite to the first rotation direction.

[0045] In the semiconductor processing method of the embodiment of the present invention, by setting the carrier plate to rotate in opposite directions at different time periods during the evaporation process, the problem of poor metal pattern morphology caused by continuous unidirectional rotation of the carrier plate can be avoided, and the formed metal pattern can have a better morphology, thereby improving the device performance of the formed semiconductor device.

[0046] Figures 5 to 8 Schematic cross-sectional views showing intermediate structures of various steps in a semiconductor processing method according to some embodiments of the present disclosure. Fig.9A and Fig. 9B A schematic partial enlarged cross-sectional view of a semiconductor device formed by using the semiconductor processing method of the embodiment of the present disclosure is shown, and for example Figure 7 Schematic enlargement of area A. Fig.10 A flow chart of a semiconductor processing method according to some embodiments of the present disclosure is shown.

[0047] refer to Figure 5 and Fig.10 In a first step S01 , a substrate is provided.

[0048] For example, a substrate 100 is provided, and the substrate 100 may be a wafer. In some embodiments, the substrate 100 may be or include a semiconductor substrate, such as a silicon substrate. In other embodiments, the substrate 100 may be or include a piezoelectric substrate, such as a piezoelectric material such as lithium niobate or lithium tantalate.

[0049] refer to Figure 6 and Fig.10In a second step S02, a patterned mask layer is formed on the substrate, wherein the patterned mask layer has a mask opening to expose a portion of the surface of the substrate.

[0050] For example, a patterned mask layer 103 is formed on a substrate 100, and the patterned mask layer 103 has one or more mask openings 104 to expose a portion of the surface of the substrate 100. In some embodiments, the bottom width (i.e., the width close to the substrate side) of the mask opening 104 may be greater than its top width (i.e., the width away from the substrate side); for example, the mask opening 104 may have a trapezoidal, inverted T-shaped, or similar shape. For example, the patterned mask layer 103 may be a double-layer structure, and may include a first mask layer 101 and a second mask layer 102, the first mask layer 101 is located on the substrate 100, and the second mask layer 102 is located on the side of the first mask layer 101 away from the substrate 100. The first mask layer 101 has a first sub-mask opening, and the second mask layer 102 has a second sub-mask opening, the first sub-mask opening and the second sub-mask opening are spatially connected to each other, and together constitute the mask opening 104. The width of the first sub-mask opening is greater than the width of the second sub-mask opening, so that the mask opening 104 includes an undercut structure between the second mask layer 102 and the substrate 100. It should be understood that the above-mentioned "width" refers to the width in a direction parallel to the main surface of the substrate. The mask opening 104 is configured as above so that the subsequently formed metal pattern and the sacrificial metal part are separated from each other, thereby facilitating the subsequent stripping process.

[0051] The patterned mask layer 103 may include a patterned photoresist layer, and the first mask layer 101 and the second mask layer 102 may include different types of photoresist materials. For example, the first mask layer 101 may include a negative photoresist, and the second mask layer 102 may include a positive photoresist. For example, the patterned mask layer 103 can be formed in the following manner: a first mask material layer (e.g., a negative photoresist layer) and a second mask material layer (e.g., a positive photoresist layer) are sequentially formed on the substrate 100; then, an exposure process is performed on the second mask material layer using a photomask, and the photomask may have an opening pattern corresponding to the second sub-mask opening. In the exposure process, the first mask material layer is covered by the second mask material layer and will not be exposed; thereafter, a development process is performed on the mask material layer, and the development process includes applying a developer to the mask material layer, and the developer removes the exposed portion of the second mask material layer (e.g., positive photoresist), thereby forming a second mask layer 102 having a second sub-mask opening; the second sub-mask opening exposes a portion of the first mask material layer, so that the developer can continue to remove a portion of the first mask material layer (e.g., negative photoresist) through the second sub-mask opening, thereby forming a first mask layer 101 having a first sub-mask opening. For example, the amount of the applied developer and the developing time may be controlled to control the amount of the first mask material layer removed, thereby controlling the size of the first sub-mask opening including the undercut structure.

[0052] refer to Figure 7 and Fig.10 In a third step S03, an evaporation process is performed in an evaporation device to form a metal material layer on the substrate and the patterned mask layer, wherein during the evaporation process, the rotation direction of a carrier plate carrying the substrate in the evaporation device is switched at least once.

[0053] For example, Figure 7 As shown, an evaporation process is performed to form a metal material layer 105 on the substrate 100 and the patterned mask layer 103. The metal material layer 105 includes a metal pattern 105a and a sacrificial metal portion 105b; the metal pattern 105a is formed on the surface of the substrate 100 exposed by the mask opening, and the sacrificial metal portion 105b is formed on a side of the patterned mask layer 103 away from the substrate 100.

[0054] refer to Figure 7 , Figure 8 and Fig.10 In a fourth step S04, the patterned mask layer and the sacrificial metal portion are removed.

[0055] For example, after the evaporation process, the patterned mask layer 103 and the sacrificial metal portion 105 b formed on a side of the patterned mask layer 103 away from the substrate 100 may be removed by a lift-off process, thereby forming a metal pattern 105 a on the substrate 100 .

[0056] refer to Figure 3 , Figure 4 and Figure 7 For example, the evaporation process is Figure 3 or Figure 4 The evaporation process is carried out in the evaporation device 50 shown in the figure. In the evaporation process, the substrate 100 formed with the patterned mask layer 103 is placed on (i.e., fixed to) the carrier plate 2, and the side of the substrate 100 with the mask layer faces the evaporation source 3; the metal target material of the evaporation source 3 is heated by an electron beam, so that the metal target material of the evaporation source 3 evaporates to form metal vapor, for example, forming an evaporation beam 3a, and the evaporation beam 3a reaches the surface of the substrate 100 formed with the patterned mask layer, so as to condense on the substrate 100 and the patterned mask layer 103 and form a metal material layer 105.

[0057] During the evaporation process, the substrate 100 rotates with the rotation of the carrier plate 2 and the planetary plate 1, so that the metal vapor can evenly reach the multiple substrates 100 located in various areas of the carrier plate. In some embodiments, the evaporation process is performed in an evaporation time period, and the evaporation time period includes a first time period and a second time period, and in the first time period, the planetary plate 1 drives the carrier plate 2 and the substrate 100 to rotate along a first rotation direction 201, and in the second time period, the planetary plate 1 drives the carrier plate 2 and the substrate 100 to rotate along a second rotation direction 202. The second rotation direction 202 is opposite to the first rotation direction 201.

[0058] In some embodiments, the first rotation direction is one of a clockwise direction and a counterclockwise direction, and the second rotation direction is the other of a clockwise direction and a counterclockwise direction.

[0059] For example, as shown in the figure, the first rotation direction 201 is a clockwise direction, and the second rotation direction 202 is a counterclockwise direction; in other examples, the first rotation direction 201 may also be a counterclockwise direction, and the second rotation direction 202 is correspondingly a clockwise direction. It should be understood that the first time period and the second time period are time periods adjacent to each other. That is, the evaporation process changes the rotation direction of the carrier plate after a period of time. In this article, the first time period refers to the time period when the carrier plate rotates along the first rotation direction, and the second time period refers to the time period when the carrier plate rotates along the second rotation direction.

[0060] By rotating the carrier plate in two opposite directions during the evaporation process, the formed metal pattern can be prevented from tilting toward one side, and the formed metal pattern 105 a can have a more symmetrical morphology.

[0061] In some embodiments, the evaporation time period may include one or more first time periods and one or more second time periods, and the first time periods and the second time periods are alternately arranged. For example, the evaporation time period may include one first time period and one second time period, that is, the carrier plate switches the rotation direction once during the entire evaporation process. For example, the evaporation time period may include multiple first time periods and / or multiple second time periods, that is, the carrier plate may switch the rotation direction multiple times during the entire evaporation process. For example, multiple time periods may be sequentially arranged as a first time period, a second time period, a first time period, a second time period, and so on.

[0062] That is, during the evaporation process, the rotation direction of the carrier plate is switched at least once, and in some examples, the rotation direction of the carrier plate may be switched multiple times. In this context, switching the rotation direction of the carrier plate includes switching the rotation direction of the carrier plate from a first rotation direction to a second rotation direction, or switching the rotation direction of the carrier plate from the second rotation direction to the first rotation direction.

[0063] In some embodiments, the number of one or more first time periods is the same as the number of one or more second time periods; and / or the total time length of one or more first time periods is the same as the total time length of one or more second time periods. For example, the switching frequency, specific number and time length of the first time period and the second time period can be set according to the material and thickness of the metal film layer to be formed; and by setting the first time period and the second time period to have the same number and / or time length, it is further conducive to forming a more symmetrical metal morphology.

[0064] In some embodiments, the metal pattern is a single-layer structure with a target thickness, and the evaporation process includes a first sub-evaporation process and a second sub-evaporation process, wherein the first sub-evaporation process deposits a metal material of a first thickness in the first time period, then changes the rotation direction of the carrier plate, and performs the second sub-evaporation process in the second time period to deposit a metal material of a second thickness; the first sub-evaporation process and the second sub-evaporation process are performed alternately, and the overall thickness of the metal material layer finally formed reaches the target thickness. For example, the first thickness and the second thickness are equal. For example, the first thickness and the second thickness are each equal to 1 / N of the target thickness, and N is an even number.

[0065] refer to Figure 7 and Figure 8For example, the metal pattern 105a may be a single-layer structure, that is, it includes a single metal material and has a target thickness T0; in the process of evaporating to form a metal material layer, when the process is carried out for a certain time, that is, after a certain thickness (less than the target thickness) of metal material is evaporated, the rotation direction of the carrier plate can be switched and the evaporation process can be continued; during the entire evaporation process, the rotation direction of the carrier plate can be switched one or more times, and finally a metal material layer with a target thickness is formed.

[0066] For example, the evaporation process may include a first sub-evaporation process and a second sub-evaporation process, wherein the first sub-evaporation process deposits a metal material of a first thickness T1 in a first time period, wherein the carrier plate rotates along a first rotation direction; then, the rotation direction of the carrier plate is changed, for example, the rotation direction of the carrier plate may be changed by computer program control; in a second time period, the carrier plate rotates along a second rotation direction, and a second sub-evaporation process is performed to deposit a metal material of a second thickness T2; the first sub-evaporation process and the second sub-evaporation process may be performed alternately, and the overall thickness of the metal material layer finally formed reaches a target thickness T0. In this example, since the metal pattern is a single-layer structure, the metal materials deposited by the first sub-evaporation process and the second sub-evaporation process are the same, and the same evaporation source may be used; for example, in the first sub-evaporation process and the second sub-evaporation process, except for the different rotation directions of the carrier plate, other process conditions and parameters may be substantially the same.

[0067] In some examples, the evaporation process may include at least one first sub-evaporation process and at least one second sub-evaporation process. For example, the evaporation process includes one sub-evaporation process and one second sub-evaporation process, that is, the sum of the first thickness T1 and the second thickness T2 may be equal to the target thickness T0; in other examples, the evaporation process may include multiple first sub-evaporation processes and / or multiple second sub-evaporation processes, and the sum of the thicknesses of the metal material accumulated by the multiple sub-evaporation processes is equal to the target thickness T0. That is, the target thickness T0 may be equal to the sum of one or more first thicknesses T1 and the first or more second thicknesses T2. In some embodiments, the number of first sub-evaporation processes may be equal to the number of second sub-evaporation processes.

[0068] In some embodiments, the first thickness T1 may be substantially equal to the second thickness T2. For example, the first thickness T1 and the second thickness T2 may each be substantially equal to 1 / N of the target thickness T0, where N may be an even number; in an alternative embodiment, N may also be an odd number. That is, the deposition of the metal material of the target thickness is roughly evenly divided into the deposition of a plurality of metal materials of target sub-thicknesses, and each metal material of the target sub-thickness is deposited and formed by a corresponding sub-evaporation process, and the rotation direction of the carrier plate in adjacent sub-evaporation processes is opposite, thereby avoiding the problem of asymmetric metal morphology caused by the continuous unidirectional rotation of the carrier plate during the evaporation process, and allowing the metal pattern formed by the plurality of sub-evaporation processes to have a more symmetrical morphology.

[0069] In some embodiments, the timing of switching the rotation direction of the carrier plate can be determined by time monitoring and / or thickness monitoring. For example, the time required for the deposition of the metal material of the target thickness can be estimated, and the required time can be roughly evenly divided into multiple time periods, and the rotation direction of the carrier plate can be switched between adjacent time periods; for example, the rotation direction of the carrier plate can be switched when the evaporation process is halfway through the total time. In other embodiments, the target thickness of the metal pattern can be roughly evenly divided into multiple target sub-thicknesses, and the thickness of the deposited metal material can be detected during the evaporation process by a detection device such as a material thickness detector, and when it is detected that the thickness of the metal material reaches the target sub-thickness, the rotation direction of the carrier plate is switched, and then the subsequent evaporation process is carried out. In some embodiments, when the rotation direction of the carrier plate is switched, the evaporation process can be paused, and the switching setting of the rotation direction of the carrier plate can be performed by a computer program, and then the evaporation process is continued.

[0070] In some embodiments, the metal pattern is a multi-layer structure and includes multiple metal sub-layers. The evaporation process includes multiple metal evaporation processes that respectively use multiple metal evaporation sources, and the multiple metal sub-layers are respectively formed by the multiple metal evaporation processes. After switching the metal evaporation source, the evaporation process changes the rotation direction of the carrier plate.

[0071] In some embodiments, the multiple metal sublayers include a first metal sublayer and a second metal sublayer, the material of the first metal sublayer is different from the material of the second metal sublayer, and the first metal sublayer is formed by a first metal evaporation process in the first time period, and the second metal sublayer is formed by a second metal evaporation process in the second time period.

[0072] When the metal pattern is a multi-layer structure, the rotation direction of the carrier plate is changed after switching the metal evaporation source. The evaporation process does not need to be paused just to switch the rotation direction of the carrier plate. Instead, the switching preparation of the carrier plate rotation direction can be carried out while switching the evaporation source. After completing the switching preparation of the evaporation source and the rotation direction, the subsequent process can be carried out, thereby saving time and speeding up production efficiency.

[0073] For example, refer to Figure 7 and Fig. 9B In some embodiments, the metal material layer 105 (i.e., the metal pattern 105a and the sacrificial metal portion 105b) is a multi-layer structure, for example, it may include a first metal sub-layer 105a1 and a second metal sub-layer 105a2, the first metal sub-layer 105a1 is formed on the substrate 100, and the second metal sub-layer 105a2 is formed on a side of the first metal sub-layer 105a1 away from the substrate 100. The material of the first metal sub-layer 105a1 and the material of the second metal sub-layer 105a2 are different, and are formed using different metal evaporation sources. It should be understood that Fig. 9B The number of material layers of the metal material layer shown is for illustrative purposes only, and the present disclosure is not limited thereto; in other embodiments, the metal material layer may also include more than two metal sub-layers, for example, may include three metal sub-layers, and the rotation direction of the carrier plate changes after each switching of the metal evaporation source.

[0074] For example, in the evaporation process, the carrier plate is rotated along a first rotation direction in a first time period, and a first metal sublayer 105a1 is formed by a first metal evaporation process; after the first metal sublayer 105a1 is formed, the evaporation process is paused, the metal evaporation source is replaced, and the rotation direction of the carrier plate is switched at the same time, for example, the rotation direction of the carrier plate in the next metal evaporation process can be set by a computer program; after the rotation direction switching setting of the metal evaporation source and the carrier plate is completed, a second metal evaporation process is performed to form a second metal sublayer 105a2, wherein the carrier plate rotates along a second rotation direction in the second metal evaporation process.

[0075] In some embodiments, in the first time period, the evaporation source used in the evaporation process has a first evaporation distance from the substrate, and metal deposition is performed on the substrate at a first evaporation angle; in the second time period, the evaporation source used in the evaporation process has a second evaporation distance from the substrate, and metal deposition is performed on the substrate at a second evaporation angle; wherein the first evaporation distance is the same as the second evaporation distance and / or the first evaporation angle is the same as the second evaporation angle. In some embodiments, the rotation speed of the carrier plate in multiple time periods may be substantially the same as each other. In this article, "evaporation distance" refers to the distance between the evaporation source and the substrate, that is, the distance from the evaporation source to the main surface of the substrate; "evaporation angle" refers to the angle between the evaporation beam and the main surface of the substrate. Rotating the carrier plate in different rotation directions in different time periods, while performing evaporation processes in different corresponding time periods at the same evaporation distance and / or the same evaporation angle and / or the same rotation speed, can further help ensure that the formed metal pattern has a more symmetrical morphology.

[0076] In some embodiments, the metal material layer 105 may include metal materials such as aluminum, copper, and titanium. For example, when the metal material layer 105 (or the formed metal pattern) is a single-layer structure, the metal material layer 105 may be an aluminum layer, or may be a copper layer. When the metal material layer 105 (or the formed metal pattern) is a multi-layer structure, the metal material layer 105 may be a stack of titanium and copper, for example, a titanium / copper / titanium stacked structure; or, the metal material layer 105 may be a stack of titanium and aluminum, for example, a titanium / aluminum / titanium stacked structure. It should be understood that the above-mentioned materials and the number of material layers of the metal material layer 105 are only illustrative, and the present disclosure is not limited thereto. The semiconductor processing method disclosed in the present disclosure can be applied to any suitable metal material pattern formation process.

[0077] An embodiment of the present disclosure provides a semiconductor device, which is formed by the above-mentioned semiconductor processing method and includes: the substrate; and the metal pattern, which is located on the substrate, wherein the metal pattern is a symmetrical figure; or the metal pattern has a first side wall and a second side wall opposite to each other in a direction parallel to the main surface of the substrate, a first angle is formed between the first side wall and the main surface of the substrate, a second angle is formed between the second side wall and the main surface of the substrate, and the difference between the first angle and the second angle ranges from 0 to 2°; or the ratio of the difference between the first angle and the second angle to the average value of the first angle and the second angle ranges from 0 to 2%.

[0078] Fig.9A and Fig. 9BA schematic cross-sectional view of a substrate and a metal pattern in a semiconductor device according to some embodiments of the present disclosure is shown, which is formed using the semiconductor processing method described in any of the above embodiments. Fig.9A An example of a metal pattern having a single-layer structure is schematically shown. Fig. 9B The schematic diagram shows an example of a metal pattern having a multi-layer structure. It should be understood that Fig.9A and Fig. 9B Only a substrate and a metal pattern in the semiconductor device are shown, and the semiconductor device may further include other components.

[0079] refer to Fig.9A and Fig. 9B For example, the semiconductor device includes a substrate 100 and a metal pattern 105a, the metal pattern 105a is located on the substrate 100, and has a first side wall S1 and a second side wall S2 opposite to each other in a direction parallel to the substrate 100 (for example, a second direction D2), the first side wall S1 has a first angle A1 with the main surface of the substrate 100, and the second side wall S2 has a second angle A2 with the main surface of the substrate 100. In some embodiments, the metal pattern 105a formed by the semiconductor processing method can be substantially symmetrical in shape whether it is a single-layer structure or a multi-layer structure. For example, the difference between the first angle A1 and the second angle A2 can range from 0 to 2°, or can also be 0 to 1.5° or 0 to 1°; for example, the ratio of the difference between the first angle A1 and the second angle A2 to the average value of the first angle A1 and the second angle A2 can range from 0 to 2%, or can also be 0 to 1.5% or 0 to 1%.

[0080] It should be understood that Figures 1 to 9B In the embodiment, the metal pattern 105a is formed on the substrate 100, and the substrate 100 may be or include a semiconductor substrate or a piezoelectric substrate; or, the substrate 100 may further include other material layers between the semiconductor substrate or the piezoelectric substrate and the metal pattern 105a. That is, the metal pattern 105a may be directly formed on the semiconductor substrate or the piezoelectric substrate, or other material layers may be formed between the metal pattern 105a and the semiconductor substrate or the piezoelectric substrate.

[0081] Fig.11 A picture showing a metal pattern formed on a substrate in an experimental example is shown, wherein the metal pattern 11 is formed on a wafer 10 using an evaporation process, and during the evaporation process, a carrier plate continuously rotates in a single direction. Fig.12 A picture showing a metal pattern formed on a substrate by a semiconductor processing method according to some embodiments of the present disclosure is shown, wherein the metal pattern 105a is formed on a substrate 100 using an evaporation process, and the rotation direction of the carrier plate is switched at least once during the evaporation process.

[0082] refer to Fig.11In the experimental example, a first angle between the first metal side wall of the metal pattern 11 (i.e., the left side wall in the figure) and the main surface of the substrate is approximately 78.1°, and a second angle between the second metal side wall (i.e., the right side wall in the figure) and the main surface of the substrate is approximately 81°; that is, the difference between the first angle and the second angle is approximately 2.9°, and the ratio of the difference between the first angle and the second angle to the average value of the first angle and the second angle (81°-78.1°) / ((81°+78.1°) / 2) is approximately 3.6%.

[0083] refer to Fig.12 , a first angle between the first side wall of the metal pattern 105a formed in the embodiment of the present disclosure (i.e., the left side wall in the figure) and the main surface of the substrate is approximately 79.9°, and a second angle between the second side wall (i.e., the right side wall in the figure) and the main surface of the substrate is approximately 81.1°; that is, the difference between the first angle and the second angle is approximately 1.2°, and the ratio of the difference between the first angle and the second angle to the average value of the first angle and the second angle (81.1°-79.9°) / ((81.1°+79.9°) / 2) is approximately 1.5%.

[0084] It can be seen from the above experimental comparison that the semiconductor processing method according to the embodiment of the present disclosure can improve the morphology of the metal pattern and obtain a more symmetrical metal morphology.

[0085] In the embodiment of the present disclosure, the morphology of the formed metal pattern is improved by rotating the carrier plate in different rotation directions at different time periods during the evaporation process. For example, the rotation direction of the carrier plate can be controlled and set by a computer program while the settings of the hardware equipment such as the evaporation equipment and the process menu remain unchanged, so that the carrier plate can rotate in different directions according to the settings during the process. For example, at the beginning of the process, the carrier plate rotates forward (for example, rotates in a first rotation direction), and when the process is carried out for a certain time or after the metal source is switched, the carrier plate is reversed (for example, rotated in a second rotation direction), thereby forming a more symmetrical metal morphology on the left and right, or in some examples, the metal sidewall can have a straighter angle. In some embodiments, the forward and reverse rotation of the carrier plate is alternated, and the alternating frequency of the forward and reverse rotation can be set and controlled by a computer program, and the alternating frequency can be designed and adjusted according to the material, thickness, etc. of the metal pattern. In the above manner, the evaporation process capability is improved, the morphology of the formed metal pattern is improved, and the device performance of the formed semiconductor device including the metal pattern can be improved.

[0086] There are a few points to note: (1) In the drawings of the embodiments of the present disclosure, only the structures related to the embodiments of the present disclosure are involved, and other structures may refer to the general design; (2) In the absence of conflict, the features of the same embodiment and different embodiments of the present disclosure may be combined with each other.

[0087] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A semiconductor processing method, characterized in that: include: providing a substrate; forming a patterned mask layer on the substrate, wherein the patterned mask layer has a mask opening to expose a portion of the surface of the substrate; Performing an evaporation process to form a metal material layer on the substrate and the patterned mask layer, the metal material layer comprising a metal pattern formed on the substrate exposed by the mask opening and a sacrificial metal portion formed on a side of the patterned mask layer away from the substrate; as well as removing the patterned mask layer and the sacrificial metal portion, The evaporation process is performed during an evaporation time period, and during the evaporation process, the substrate formed with the patterned mask layer is placed on a carrier plate of an evaporation device, and the substrate rotates as the carrier plate rotates, wherein the evaporation time period includes a first time period and a second time period, the carrier plate rotates along a first rotation direction during the first time period, and rotates along a second rotation direction during the second time period, and the second rotation direction is opposite to the first rotation direction.

2. The semiconductor processing method according to claim 1, characterized in that: The first rotation direction is one of a clockwise direction and a counterclockwise direction, and the second rotation direction is the other of a clockwise direction and a counterclockwise direction.

3. The semiconductor processing method according to claim 1, characterized in that: The evaporation time period includes one or more of the first time periods and one or more of the second time periods, and the first time periods and the second time periods are alternately arranged.

4. The semiconductor processing method according to claim 3, characterized in that: The number of the one or more first time periods is the same as the number of the one or more second time periods; and / or The total time length of the one or more first time periods is the same as the total time length of the one or more second time periods.

5. The semiconductor processing method according to any one of claims 1 to 4, characterized in that: The metal pattern is a single-layer structure having a target thickness, and the evaporation process includes a first sub-evaporation process and a second sub-evaporation process, The first sub-evaporation process deposits a metal material of a first thickness in the first time period, then changes the rotation direction of the carrier plate, and performs the second sub-evaporation process in the second time period to deposit a metal material of a second thickness; the first sub-evaporation process and the second sub-evaporation process are performed alternately, and the overall thickness of the metal material layer finally formed reaches the target thickness.

6. The semiconductor processing method according to claim 5, characterized in that: The first thickness and the second thickness are equal.

7. The semiconductor processing method according to claim 5, characterized in that: The first thickness and the second thickness are each equal to 1 / N of the target thickness, and N is an even number.

8. The semiconductor processing method according to any one of claims 1 to 4, characterized in that: The metal pattern is a multi-layer structure and includes multiple metal sub-layers. The evaporation process includes multiple metal evaporation processes that use multiple metal evaporation sources respectively, and the multiple metal sub-layers are formed by the multiple metal evaporation processes respectively. After switching the metal evaporation source, the evaporation process changes the rotation direction of the carrier plate.

9. The semiconductor processing method according to claim 8, characterized in that: The multiple metal sublayers include a first metal sublayer and a second metal sublayer, the material of the first metal sublayer is different from the material of the second metal sublayer, and the first metal sublayer is formed by a first metal evaporation process in the first time period, and the second metal sublayer is formed by a second metal evaporation process in the second time period.

10. The semiconductor processing method according to claim 1, characterized in that: In the first time period, the evaporation source used in the evaporation process has a first evaporation distance from the substrate, and metal deposition is performed on the substrate at a first evaporation angle; In the second time period, there is a second evaporation distance between the evaporation source used in the evaporation process and the substrate, and metal deposition is performed on the substrate at a second evaporation angle; The first evaporation distance is the same as the second evaporation distance, and / or the first evaporation angle is the same as the second evaporation angle.

11. A semiconductor device, characterized in that: The method is formed by the semiconductor processing method according to any one of claims 1 to 10, and comprises: the substrate; and The metal pattern is located on the substrate, wherein The metal pattern is a symmetrical pattern; or The metal pattern has a first side wall and a second side wall opposite to each other in a direction parallel to the main surface of the substrate, a first angle is formed between the first side wall and the main surface of the substrate, a second angle is formed between the second side wall and the main surface of the substrate, and a difference between the first angle and the second angle ranges from 0 to 2°; or a ratio of the difference between the first angle and the second angle to an average value of the first angle and the second angle ranges from 0 to 2%.

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