PE-poly re-plating method and device, electronic equipment and storage medium

Abstract

The invention provides a PE-poly re-plating method and device, electronic equipment and a storage medium. The method comprises the steps that after PE-poly equipment gives an alarm and stops running, whether a silicon wafer is subjected to replating or not is judged based on an alarm reason, technological parameters of a completed deposition step and technological parameters of a current deposition step; if it is judged that the silicon wafer is subjected to replating, replating process parameters of the silicon wafer are determined based on the alarm reason, the process parameters of the completed deposition step and the process parameters of the current deposition step; and controlling PE-poly equipment to carry out replating on the silicon wafer based on the replating process parameters. According to the invention, unqualified silicon wafers in the prior art can be changed into qualified silicon wafers, and waste of materials and energy is avoided.

Description

Technical Field

[0001] The present invention relates to the field of vapor deposition technology, and in particular to a PE-poly plating method, device, electronic equipment and storage medium. Background Art

[0002] At present, the PE-poly route accounts for more than 50% of the mainstream TOPCon solar cell process route. PE-poly refers to the use of plasma enhanced chemical vapor deposition to deposit a layer of poly-Si on the surface of the silicon wafer. The number and thickness of different n-poly layers can be adjusted according to specific needs. Affected by the production model, this route method will cause a certain proportion of process interruptions due to high-frequency alarms.

[0003] In this case, the current conventional method is to directly rework this batch of silicon wafers, first clean the silicon wafers using a specific method to remove the existing film layer on the surface of the silicon wafers, and then return to the first process to texturize the surface of the silicon wafers and put them into production again. This will delay production time and cause waste of materials, manpower and energy. Summary of the invention

[0004] The embodiments of the present invention provide a PE-poly plating method, device, electronic device and storage medium to solve the problem of waste of materials and energy caused by silicon wafer rework after the PE-poly equipment alarm is interrupted.

[0005] In a first aspect, an embodiment of the present invention provides a PE-poly plating method, comprising:

[0006] After the PE-poly equipment alarm interrupts operation, determine whether to re-plating the silicon wafer based on the alarm cause, the process parameters of the completed deposition step, and the process parameters of the current deposition step;

[0007] If it is determined that the silicon wafer is to be re-plated, the re-plating process parameters of the silicon wafer are determined based on the alarm cause, the process parameters of the completed deposition step, and the process parameters of the current deposition step;

[0008] Control the PE-poly equipment to perform re-plating on the silicon wafer based on the re-plating process parameters.

[0009] In a possible implementation, after the PE-poly equipment alarm interrupts operation, it is determined whether to perform re-plating on the silicon wafer based on the alarm cause, the process parameters of the completed deposition step, and the process parameters of the current deposition step, including:

[0010] If the alarm is caused by debris in the PE-poly equipment, and the deviations between the process parameters of the completed deposition step and the process parameters of the current deposition step and the preset process parameter range are both less than the preset deviation threshold, it is determined that the silicon wafer should be re-plated.

[0011] In a possible implementation, the process parameters include process duration; determining the re-plating process parameters of the silicon wafer based on the alarm cause, the process parameters of the completed deposition step, and the process parameters of the current deposition step includes:

[0012] If the alarm is caused by the presence of debris in the PE-poly device, the completed deposition steps are removed from all the deposition steps corresponding to the silicon wafer to obtain the remaining deposition steps;

[0013] The duration of the remaining deposition steps is adjusted based on the duration of the current deposition step to obtain the plating process parameters of the silicon wafer.

[0014] In a possible implementation, adjusting the duration of the remaining deposition steps based on the duration of the current deposition step includes:

[0015] If the duration of the current deposition step is less than the preset duration threshold, the duration of the current deposition step in the remaining deposition steps is set to a-b+c, where a is the original duration of each deposition step, b is the duration of the current deposition step, and c is the preset correction coefficient.

[0016] In a possible implementation, adjusting the duration of the remaining deposition steps based on the duration of the current deposition step also includes:

[0017] If the duration of the current deposition step is not less than the preset duration threshold, the current deposition step is removed from the remaining deposition steps, and the duration of the next deposition step is set to 2a-b, where a is the original duration of each deposition step and b is the duration of the current deposition step.

[0018] In a possible implementation, after controlling the PE-poly equipment to perform re-plating on the silicon wafer based on the re-plating process parameters, the method further includes:

[0019] Obtaining the coating thickness of the silicon wafer after re-plating;

[0020] The preset deviation threshold is adjusted based on the deviation of the coating thickness from the expected coating thickness.

[0021] In a second aspect, an embodiment of the present invention provides a PE-poly plating device, comprising:

[0022] A judgment module is used to judge whether to perform re-plating on the silicon wafer based on the alarm cause, the process parameters of the completed deposition step and the process parameters of the current deposition step after the PE-poly equipment alarm interrupts operation;

[0023] A calculation module, for determining the re-plating process parameters of the silicon wafer based on the alarm cause, the process parameters of the completed deposition step and the process parameters of the current deposition step when determining to re-plating the silicon wafer;

[0024] The re-plating module is used to control the PE-poly equipment to re-plating the silicon wafer based on the re-plating process parameters.

[0025] In a third aspect, an embodiment of the present invention provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the computer program, the processor implements the steps of the method described in the first aspect or any possible implementation manner of the first aspect.

[0026] In a fourth aspect, an embodiment of the present invention provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the method described in the first aspect or any possible implementation method of the first aspect are implemented.

[0027] The embodiment of the present invention provides a PE-poly re-plating method, device, electronic device and storage medium. By analyzing the alarm cause of the PE-poly equipment alarm interruption and combining the specific parameters of the completed deposition step, it is possible to conduct a specific analysis on whether the equipment alarm is caused by whether there are fragments in the graphite boat, equipment failure or unqualified process parameters of the deposition step, thereby judging whether the silicon wafer is suitable for re-plating on the basis of the previous deposition step, and adopting appropriate process parameters to re-plating the silicon wafer, so that the silicon wafer determined as unqualified in the prior art can be converted into a qualified silicon wafer, thereby avoiding waste of materials and energy. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0029] Figure 1 It is a flow chart of the implementation of the PE-poly plating method provided by one embodiment of the present invention;

[0030] Figure 2 It is a schematic structural diagram of a PE-poly plating device provided by one embodiment of the present invention;

[0031] Figure 3 It is a schematic diagram of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0032] In the following description, specific details such as specific system structures, technologies, etc. are provided for the purpose of illustration rather than limitation, so as to provide a thorough understanding of the embodiments of the present invention. However, it should be clear to those skilled in the art that the present invention may be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to prevent unnecessary details from obstructing the description of the present invention.

[0033] In order to make the purpose, technical solutions and advantages of the present invention more clear, specific embodiments will be described below in conjunction with the accompanying drawings.

[0034] See also Figure 1 , which shows a flow chart of the implementation of the PE-poly plating method provided by an embodiment of the present invention, which is described in detail as follows:

[0035] Step 101, after the PE-poly equipment alarm interrupts operation, determine whether to perform re-plating on the silicon wafer based on the alarm cause, the process parameters of the completed deposition step and the process parameters of the current deposition step.

[0036] In this embodiment, the basic process steps of PE-poly include: 1 opening the furnace door, 2 entering the boat, 3 heating, 4 constant temperature, 5 vacuuming, 6 leak detection, 7 vacuuming, 8 pre-deposition, 9 tunneling layer, 10 vacuuming, 11 pre-deposition, 12n-poly1, 13 pre-deposition, 14n-poly2, 15 pre-deposition, 16n-poly3, 17 pre-deposition, 18n-poly4, 19 vacuuming, 20 pre-deposition, 21 Mask, 22 vacuuming, 23 purge, 24 leaving the boat. In normal production, the process parameters of the deposition steps can be adjusted according to specific needs to achieve different n-poly layers and thicknesses.

[0037] Before executing the deposition process, alarm conditions can be set for the PE-poly equipment according to actual needs. For example, an alarm can be set when the process parameters of the PE-poly equipment are abnormal. It can be determined that the process parameters for deposition on the silicon wafer are unqualified when the alarm is interrupted, and the silicon wafer does not meet the conditions for re-plating.

[0038] Step 102, if it is determined that the silicon wafer needs to be re-plated, the re-plating process parameters of the silicon wafer are determined based on the alarm cause, the process parameters of the completed deposition step, and the process parameters of the current deposition step.

[0039] In this embodiment, the basic principle of re-plating the silicon wafer is to restart the process from the time period when the process was interrupted and continue the deposition steps that were not running. When the alarm is caused by the presence of debris in the graphite boat, it is necessary to remove the debris in the graphite boat before re-plating.

[0040] Step 103, controlling the PE-poly equipment to perform re-plating on the silicon wafer based on the re-plating process parameters.

[0041] In this embodiment, the above steps can be used to determine appropriate re-plating process parameters for the silicon wafer. When re-plating is set for the PE-poly equipment, it can be manually set to skip the process steps that have been performed to improve the efficiency of re-plating.

[0042] The embodiment of the present invention can analyze the alarm cause of the PE-poly equipment alarm interruption in combination with the specific parameters of the completed deposition step to determine whether the equipment alarm is caused by fragments in the graphite boat, equipment failure, or unqualified process parameters of the deposition step, thereby determining whether the silicon wafer is suitable for re-plating on the basis of the previous deposition step, and using appropriate process parameters to re-plating the silicon wafer, which can convert the unqualified silicon wafer determined by the prior art into a qualified silicon wafer, thereby avoiding waste of materials and energy.

[0043] In a possible implementation, after the PE-poly equipment alarm interrupts operation, it is determined whether to perform re-plating on the silicon wafer based on the alarm cause, the process parameters of the completed deposition step, and the process parameters of the current deposition step, including:

[0044] If the alarm is caused by debris in the PE-poly equipment, and the deviations between the process parameters of the completed deposition step and the process parameters of the current deposition step and the preset process parameter range are both less than the preset deviation threshold, it is determined that the silicon wafer should be re-plated.

[0045] In this embodiment, the preset deviation threshold may be that the deviation range of voltage, current, and characteristic air flow is within 5%, and the temperature is within 2 degrees.

[0046] In the basic parameter alarm setting link, the alarm condition can be set based on the above deviation threshold. If the alarm range is set too wide (the deviation threshold of voltage, current, and special gas flow rate is greater than 5%, and the temperature deviation threshold is greater than 2 degrees), it will cause the problem that any of the factors such as RF voltage, current, special gas flow rate, and temperature may deviate greatly during operation without alarming, and the corresponding film quality at this time may be unqualified. Then, the inner film quality is poor but the alarm is issued during the outer layer process. If this phenomenon occurs, even if the silicon wafer is re-plated after the interruption, the obtained product will be unqualified, so when setting the basic parameter alarm, it is necessary to ensure that the deviation range of each parameter (voltage, current, special gas flow rate) is within 5% and the temperature is within 2 degrees. In this way, it can be ensured that when the alarm is issued, there must be a problem that affects the quality at this time, and then the re-plating measures will be effective. This important prerequisite is the basis for ensuring that the re-plating is qualified and effective.

[0047] In a possible implementation, the process parameters include process duration; determining the re-plating process parameters of the silicon wafer based on the alarm cause, the process parameters of the completed deposition step, and the process parameters of the current deposition step includes:

[0048] If the alarm is caused by the presence of debris in the PE-poly device, the completed deposition steps are removed from all the deposition steps corresponding to the silicon wafer to obtain the remaining deposition steps;

[0049] The duration of the remaining deposition steps is adjusted based on the duration of the current deposition step to obtain the plating process parameters of the silicon wafer.

[0050] In this embodiment, the re-plating process may generally include the following steps: boat entry, heating, vacuuming, leak detection, heating, n-poly2, n-poly3, n-poly4, vacuuming, pre-deposition, mask, vacuuming, and boat exit. In this process, the process time of each deposition layer needs to be determined according to the specific interruption process time. Other process conditions such as temperature, pressure, gas flow rate, and RF power are kept consistent with those of the normal production process.

[0051] In a possible implementation, adjusting the duration of the remaining deposition steps based on the duration of the current deposition step includes:

[0052] If the duration of the current deposition step is less than the preset duration threshold, the duration of the current deposition step in the remaining deposition steps is set to a-b+c, where a is the original duration of each deposition step, b is the duration of the current deposition step, and c is the preset correction coefficient.

[0053] In this embodiment, the preset time threshold and the correction coefficient can be set according to the actual situation, for example, it is determined through experiments that the correction coefficient is less than the duration of the current deposition step. If the duration of the current deposition step is less than the preset time threshold, it is considered that when the device alarm is interrupted, the duration of the current deposition step is too short, resulting in too small a deposition effect produced by the step, and the current deposition step needs to be re-executed, and the duration of the re-execution of the current deposition step is appropriately shortened to achieve a coating effect similar to the originally planned deposition process.

[0054] In a possible implementation, adjusting the duration of the remaining deposition steps based on the duration of the current deposition step also includes:

[0055] If the duration of the current deposition step is not less than the preset duration threshold, the current deposition step is removed from the remaining deposition steps, and the duration of the next deposition step is set to 2a-b, where a is the original duration of each deposition step and b is the duration of the current deposition step.

[0056] In this embodiment, if the duration of the current deposition step is not less than the preset duration threshold, it means that the current deposition step is close to completion, but the coating thickness may be lower than the coating thickness that can be obtained by fully implementing the current deposition step. At this time, the current deposition step will no longer be re-executed, but the duration of the next deposition step will be appropriately increased to achieve a coating effect similar to the originally planned deposition process.

[0057] In a possible implementation, after controlling the PE-poly equipment to perform re-plating on the silicon wafer based on the re-plating process parameters, the method further includes:

[0058] Obtaining the coating thickness of the silicon wafer after re-plating;

[0059] The preset deviation threshold is adjusted based on the deviation of the coating thickness from the expected coating thickness.

[0060] In this embodiment, the coating thickness can be measured by online or offline film thickness detection equipment, for example, a full spectrum ellipsometer can be used to measure the coating thickness and refractive index after the re-plating. Based on the deviation between the coating thickness and the expected coating thickness, it can be determined whether the preset deviation threshold is reasonable. If the deviation between the coating thickness and the expected coating thickness is too large, the preset deviation threshold can be increased or decreased until the coating thickness and refractive index after the re-plating meet the production requirements.

[0061] In a specific embodiment, the specific steps of performing the repair plating are as follows:

[0062] 1. First, confirm the furnace tube that has exited the process operation due to high-frequency alarm - it will be displayed directly on the equipment operation screen;

[0063] 2. Determine which alarm occurred in which process step and interrupted the process - enter the equipment operation record interface to directly check the specific alarm information (at which process step and at which specific time the alarm occurred and interrupted the process operation);

[0064] 3. Check whether there are fragments in the graphite boat. If there are fragments, remove them and continue to operate the process;

[0065] 4. If the process interruption is not caused by debris, further confirm whether there is any equipment failure. If not, re-plating can be performed according to the interrupted process steps and time;

[0066] 5. Determine the process details. The basic principle is to restart the process from the time period when the process was interrupted. The process steps before the interruption can be manually reduced to the minimum time of each step. After the process is determined;

[0067] 6. Operate the graphite boat that needs to be re-plated in manual mode; select the re-plating process;

[0068] 7. Manually put the graphite boat back into the furnace tube and run the re-plating process.

[0069] 8. Carry out poly thickness test on the re-plated silicon wafer, and only proceed to the next step if it is qualified.

[0070] Based on the above steps, the actual data after re-plating and normal production data can be obtained, and the comparison is shown in Table 1.

[0071] Table 1

[0072] Number of pieces Production (thickness nm) Repair plating (thickness nm) 1 118.5 116.8 2 116.4 115.4 3 120.1 113.7 4 116.7 120.4 5 118.9 119.3 6 115.3 118.4 7 117.4 118.2 8 116.6 117.4 9 118.3 118.8 10 121.2 116.2 11 114.7 121.5 12 116.6 119.4 13 118.4 117.6 14 117.2 118.3 15 122.8 114.2 16 117.4 116.5 17 114.4 117.3 18 116.5 113.2 19 117.3 118.7 20 117.6 116.6 average 117.615 117.395

[0073] It can be seen from the actual data that the repair plating method provided in this embodiment can effectively ensure product quality.

[0074] After a high-frequency alarm interrupts a process, the embodiment of the present invention confirms the furnace tube that exits the process operation due to the high-frequency alarm; determines which alarm occurred in which process step and interrupted the process; checks whether there are fragments in the graphite boat; analyzes whether a repair plating process can be performed; determines the details of the repair plating process; operates the state of the graphite boat that needs repair plating in manual mode; replaces the fragments; manually sends the graphite boat back into the furnace tube; and manually runs the repair plating process, so that a special treatment method can be directly adopted in the PEpoly process to convert unqualified silicon wafers into qualified silicon wafers, which saves time and avoids waste of materials, manpower, and energy.

[0075] It should be understood that the order of execution of the steps in the above embodiment does not necessarily mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present invention.

[0076] The following is an embodiment of the device of the present invention. For details not described in detail therein, reference may be made to the corresponding method embodiment described above.

[0077] Figure 2 The schematic diagram of the structure of the PE-poly plating device provided by the embodiment of the present invention is shown. For the convenience of explanation, only the part related to the embodiment of the present invention is shown, which is described in detail as follows:

[0078] like Figure 2 As shown, the PE-poly plating device 2 includes:

[0079] A judgment module 21 is used to judge whether to perform re-plating on the silicon wafer based on the alarm cause, the process parameters of the completed deposition step and the process parameters of the current deposition step after the PE-poly equipment alarm interrupts operation;

[0080] The calculation module 22 is used to determine the re-plating process parameters of the silicon wafer based on the alarm cause, the process parameters of the completed deposition step and the process parameters of the current deposition step when determining to re-plating the silicon wafer;

[0081] The re-plating module 23 is used to control the PE-poly equipment to perform re-plating on the silicon wafer based on the re-plating process parameters.

[0082] In a possible implementation, the determination module 21 is specifically configured to:

[0083] If the alarm is caused by debris in the PE-poly equipment, and the deviations between the process parameters of the completed deposition step and the process parameters of the current deposition step and the preset process parameter range are both less than the preset deviation threshold, it is determined that the silicon wafer should be re-plated.

[0084] In a possible implementation, the process parameters include process duration; the calculation module 22 is specifically used for:

[0085] If the alarm is caused by the presence of debris in the PE-poly device, the completed deposition steps are removed from all the deposition steps corresponding to the silicon wafer to obtain the remaining deposition steps;

[0086] The duration of the remaining deposition steps is adjusted based on the duration of the current deposition step to obtain the plating process parameters of the silicon wafer.

[0087] In a possible implementation, the calculation module 22 is specifically configured to:

[0088] If the duration of the current deposition step is less than the preset duration threshold, the duration of the current deposition step in the remaining deposition steps is set to a-b+c, where a is the original duration of each deposition step, b is the duration of the current deposition step, and c is the preset correction coefficient.

[0089] In a possible implementation, the calculation module 22 is specifically configured to:

[0090] If the duration of the current deposition step is not less than the preset duration threshold, the current deposition step is removed from the remaining deposition steps, and the duration of the next deposition step is set to 2a-b, where a is the original duration of each deposition step and b is the duration of the current deposition step.

[0091] In a possible implementation, the re-plating module 23 is further used for:

[0092] After controlling the PE-poly equipment to perform re-plating on the silicon wafer based on the re-plating process parameters, obtaining the coating thickness of the silicon wafer after the re-plating;

[0093] The preset deviation threshold is adjusted based on the deviation of the coating thickness from the expected coating thickness.

[0094] The embodiment of the present invention can analyze the alarm cause of the PE-poly equipment alarm interruption in combination with the specific parameters of the completed deposition step to determine whether the equipment alarm is caused by fragments in the graphite boat, equipment failure, or unqualified process parameters of the deposition step, thereby determining whether the silicon wafer is suitable for re-plating on the basis of the previous deposition step, and using appropriate process parameters to re-plating the silicon wafer, which can convert the unqualified silicon wafer determined by the prior art into a qualified silicon wafer, thereby avoiding waste of materials and energy.

[0095] Figure 3 Schematic diagram of an electronic device provided by an embodiment of the present invention. Figure 3 As shown, the electronic device 3 of this embodiment includes: a processor 30, a memory 31, and a computer program 32 stored in the memory 31 and executable on the processor 30. When the processor 30 executes the computer program 32, the steps in the above-mentioned PE-poly plating method embodiments are implemented, for example Figure 1 Alternatively, when the processor 30 executes the computer program 32, the functions of each module / unit in the above-mentioned device embodiments are realized, for example, Figure 2 Functions of modules / units 21 to 23 are shown.

[0096] Exemplarily, the computer program 32 may be divided into one or more modules / units, which are stored in the memory 31 and executed by the processor 30 to implement the present invention. The one or more modules / units may be a series of computer program instruction segments capable of implementing specific functions, which are used to describe the execution process of the computer program 32 in the electronic device 3. For example, the computer program 32 may be divided into Figure 2 Modules / units 21 to 23 are shown.

[0097] The electronic device 3 may be a computing device such as a desktop computer, a notebook, a PDA, or a cloud server. The electronic device 3 may include, but is not limited to, a processor 30 and a memory 31. Those skilled in the art will appreciate that Figure 3 It is only an example of the electronic device 3 and does not constitute a limitation of the electronic device 3. It may include more or fewer components than shown in the figure, or a combination of certain components, or different components. For example, the electronic device may also include input and output devices, network access devices, buses, etc.

[0098] The processor 30 may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor, etc.

[0099] The memory 31 may be an internal storage unit of the electronic device 3, such as a hard disk or memory of the electronic device 3. The memory 31 may also be an external storage device of the electronic device 3, such as a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card, etc. equipped on the electronic device 3. Further, the memory 31 may also include both an internal storage unit and an external storage device of the electronic device 3. The memory 31 is used to store the computer program and other programs and data required by the electronic device. The memory 31 may also be used to temporarily store data that has been output or is to be output.

[0100] The technicians in the relevant field can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional units and modules is used as an example for illustration. In practical applications, the above-mentioned function allocation can be completed by different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiment can be integrated in a processing unit, or each unit can exist physically separately, or two or more units can be integrated in one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of software functional units. In addition, the specific names of the functional units and modules are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of this application. The specific working process of the units and modules in the above-mentioned system can refer to the corresponding process in the aforementioned method embodiment, which will not be repeated here.

[0101] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described or recorded in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0102] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0103] In the embodiments provided by the present invention, it should be understood that the disclosed devices / electronic devices and methods can be implemented in other ways. For example, the device / electronic device embodiments described above are only schematic. For example, the division of the modules or units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0104] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0105] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0106] If the integrated module / unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, the present invention implements all or part of the processes in the above-mentioned embodiment method, and can also be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium, and when the computer program is executed by a processor, the steps of the above-mentioned PE-poly plating method embodiments can be implemented. Wherein, the computer program includes a computer program code, and the computer program code can be in the form of source code, object code, executable file or some intermediate form. The computer-readable medium may include: any entity or device capable of carrying the computer program code, a recording medium, a U disk, a mobile hard disk, a magnetic disk, an optical disk, a computer memory, a read-only memory (ROM), a random access memory (RAM), an electrical carrier signal, a telecommunication signal, and a software distribution medium. It should be noted that the content contained in the computer-readable medium can be appropriately increased or decreased according to the requirements of legislation and patent practices in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practices, computer-readable media does not include electrical carrier signals and telecommunication signals.

[0107] The embodiments described above are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A PE-poly plating method, characterized in that: include: After the PE-poly equipment alarm interrupts operation, determine whether to re-plating the silicon wafer based on the alarm cause, the process parameters of the completed deposition step, and the process parameters of the current deposition step; If it is determined that the silicon wafer is to be re-plated, determining the re-plating process parameters of the silicon wafer based on the alarm cause, the process parameters of the completed deposition step, and the process parameters of the current deposition step; The PE-poly equipment is controlled to perform re-plating on the silicon wafer based on the re-plating process parameters.

2. The PE-poly plating method according to claim 1, characterized in that: After the PE-poly equipment alarm interrupts operation, judging whether to perform re-plating on the silicon wafer based on the alarm cause, the process parameters of the completed deposition step and the process parameters of the current deposition step includes: If the alarm is caused by the presence of debris in the PE-poly equipment, and the deviations between the process parameters of the completed deposition step and the process parameters of the current deposition step and the preset process parameter range are both less than the preset deviation threshold, it is determined that the silicon wafer is to be re-plated.

3. The PE-poly plating method according to claim 2, characterized in that: The process parameters include process duration; the process parameters for re-plating the silicon wafer based on the alarm cause, the process parameters of the completed deposition step, and the process parameters of the current deposition step are determined, including: If the alarm is caused by the presence of debris in the PE-poly device, the completed deposition steps are removed from all deposition steps corresponding to the silicon wafer to obtain the remaining deposition steps; The duration of the remaining deposition steps is adjusted based on the duration of the current deposition step to obtain the supplementary plating process parameters of the silicon wafer.

4. The PE-poly plating method according to claim 3, characterized in that: The adjusting the duration of the remaining deposition steps based on the duration of the current deposition step comprises: If the duration of the current deposition step is less than the preset duration threshold, the duration of the current deposition step in the remaining deposition steps is set to a-b+c, where a is the original duration of each deposition step, b is the duration of the current deposition step, and c is the preset correction coefficient.

5. The PE-poly plating method according to claim 3, characterized in that: The adjusting the duration of the remaining deposition steps based on the duration of the current deposition step also includes: If the duration of the current deposition step is not less than the preset duration threshold, the current deposition step is removed from the remaining deposition steps, and the duration of the next deposition step is set to 2a-b, where a is the original duration of each deposition step and b is the duration of the current deposition step.

6. The PE-poly plating method according to claim 2, characterized in that: After controlling the PE-poly equipment to perform re-plating on the silicon wafer based on the re-plating process parameters, the method further includes: Obtaining the coating thickness of the silicon wafer after re-plating; The preset deviation threshold is adjusted based on the deviation between the coating thickness and the expected coating thickness.

7. A PE-poly plating device, characterized in that: include: A judgment module is used to judge whether to perform re-plating on the silicon wafer based on the alarm cause, the process parameters of the completed deposition step and the process parameters of the current deposition step after the PE-poly equipment alarm interrupts operation; A calculation module, for determining the re-plating process parameters of the silicon wafer based on the alarm cause, the process parameters of the completed deposition step, and the process parameters of the current deposition step when determining to re-plating the silicon wafer; The re-plating module is used to control the PE-poly equipment to perform re-plating on the silicon wafer based on the re-plating process parameters.

8. The PE-poly plating device according to claim 7, characterized in that: The judgment module is specifically used for: If the alarm is caused by the presence of debris in the PE-poly equipment, and the deviations between the process parameters of the completed deposition step and the process parameters of the current deposition step and the preset process parameter range are both less than the preset deviation threshold, it is determined that the silicon wafer is to be re-plated.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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