True random number generator and random number generation method based on magnetic tunnel junction device

Abstract

The present application provides a true random number generator and a random number generation method based on a magnetic tunnel junction device. The true random number generator provided by the present application includes a control circuit, a magnetic tunnel junction device, and a random number generator; the control circuit is used to provide multiple continuous voltage pulse signals to the magnetic tunnel junction device, causing the resistance of the magnetic tunnel junction device to oscillate; the multiple voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device, and after the multiple continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates the flipping probabilities based on in-memory calculations so that the final flipping probability after accumulation tends to be half-and-half probability; the random number generator is used to generate random numbers based on the resistance state of the magnetic tunnel junction device after the multiple continuous voltage pulse signals are applied. The true random number generator and random number generation method based on the magnetic tunnel junction device provided by the present application can generate random numbers with high randomness and uniform distribution.

Description

Technical Field

[0001] The present application relates to the technical field of random number generators, and in particular to a true random number generator based on a magnetic tunnel junction device and a random number generation method. Background Art

[0002] Random numbers are needed in fields such as cryptography, computer simulation, and statistical analysis. Random number generators, as devices that can generate random numbers, are widely used in cryptography, computer simulation, and statistical analysis.

[0003] For true random number generators based on magnetic tunnel junction devices, the closer the flip probability of the magnetic tunnel junction device is to 50%, the more random and uniform the generated random numbers will be. To ensure a flip probability close to 50%, traditional true random number generators generate random numbers when the device reaches a metastable state and oscillations drop to very low levels. However, when there is a magnetic field in the environment or an offset magnetic field within the device, the corresponding flip probability will deviate from 50% when the device reaches a metastable state, destroying the randomness and uniformity of the random numbers. Summary of the Invention

[0004] In view of this, the present application provides a true random number generator and a random number generation method based on a magnetic tunnel junction device, so as to generate random numbers with high randomness and uniform distribution.

[0005] Specifically, this application is implemented through the following technical solutions:

[0006] In a first aspect, the present application provides a true random number generator based on a magnetic tunnel junction device, the true random number generator comprising a control circuit, a magnetic tunnel junction device and a random number generator; wherein,

[0007] The control circuit is configured to provide and apply a plurality of continuous voltage pulse signals to the magnetic tunnel junction device to cause the resistance of the magnetic tunnel junction device to oscillate; wherein the voltage amplitudes and pulse widths of the plurality of continuous voltage pulse signals are within a preset range; the plurality of continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device; after the plurality of continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates flipping probabilities based on an in-memory calculation, so that a final flipping probability after the accumulation approaches a 50-50 probability;

[0008] The random number generator is used to generate a random number according to the resistance state of the magnetic tunnel junction device after the multiple continuous voltage pulse signals are applied.

[0009] A second aspect of the present application provides a random number generation method, which is implemented based on the true random number generator based on the magnetic tunnel junction device provided in the first aspect of the present application. The random number generation method includes:

[0010] providing and applying a plurality of continuous voltage pulse signals to a magnetic tunnel junction device to cause the resistance of the magnetic tunnel junction device to oscillate; wherein the voltage amplitudes and pulse widths of the plurality of continuous voltage pulse signals are within a preset range; the plurality of continuous voltage pulse signals correspond to different flipping probabilities of the voltage-controlled magnetic tunnel junction device; after the plurality of continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates flipping probabilities based on an in-memory calculation, so that a final flipping probability after the accumulation approaches a 50-50 probability;

[0011] A random number is generated according to the resistance state of the magnetic tunnel junction device after the application of the multiple continuous voltage pulse signals is completed.

[0012] The present application provides a true random number generator and random number generation method based on a magnetic tunnel junction device. A controller, a magnetic tunnel junction device, and a random number generator are provided. The control circuit provides and applies multiple continuous voltage pulse signals to the magnetic tunnel junction device, thereby causing the random number generator to generate random numbers based on the resistance state of the magnetic tunnel junction device after the multiple continuous voltage pulse signals are applied. Because the voltage amplitudes and pulse widths of the multiple voltage pulse signals are within a preset range, and the multiple voltage pulse signals correspond to different flip probabilities of the magnetic tunnel junction device, based on the characteristics of the magnetic tunnel junction device, after the multiple continuous voltage pulse signals act in concert on the magnetic tunnel junction device, the flip probabilities corresponding to each voltage pulse signal are accumulated in an exclusive-OR fashion through in-memory calculation. Because the multiple voltage pulse signals correspond to different flip probabilities, the concerted action of the multiple continuous voltage pulse signals can counteract the problem of flip probability drift, causing the final flip probability of the magnetic tunnel junction device after accumulation to approach a 50-50 probability, thereby improving the randomness and uniformity of the random numbers generated by the true random number generator. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a graph showing the relationship between the flip probability of a magnetic tunnel junction device and pulse width according to an exemplary embodiment of the present application;

[0014] Figure 2 A schematic diagram of a first embodiment of a true random number generator based on a magnetic tunnel junction device provided by the present application;

[0015] Figure 3 This is a waveform diagram of multiple continuous voltage pulse signals shown in an exemplary embodiment of the present application;

[0016] Figure 4 This is a flowchart of Example 1 of the random number generation method provided in this application.

[0017] Description of reference numerals:

[0018] 1: control circuit;

[0019] 2: Magnetic tunnel junction device;

[0020] 3: Random number generator. DETAILED DESCRIPTION

[0021] Exemplary embodiments are described in detail herein, with examples illustrated in the accompanying drawings. When the following description refers to the drawings, identical numerals in different drawings represent identical or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with this application.

[0022] The terms used in this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The singular forms "a," "the," and "the" used in this application are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term "and / or" as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0023] It should be understood that although the terms first, second, third, etc. may be used in this application to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of this application, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".

[0024] Figure 1 This is a graph showing the relationship between the flip probability of a magnetic tunnel junction device and the pulse width according to an exemplary embodiment of the present application. Figure 1 ,It is understandable that the flip probability of the ,magnetic tunnel junction device oscillates with the change of the pulse width, and ,enters a metastable state when the pulse width increases to a certain ,value.

[0025] In a true random number generator based on a magnetic tunnel junction device, since random numbers are unpredictable and uniformly distributed, when the flip probability of the magnetic tunnel junction device is close to 50%, it means that in a large number of samples, the frequency of occurrence of the generated random numbers at different values is similar, that is, the unpredictability and uniform distribution of the random numbers generated by the true random number generator are better. Figure 1To ensure the randomness and uniformity of generated random numbers, traditional true random number generators often generate random numbers when the magnetic tunnel junction device is in a metastable state and the oscillation has dropped to a very low level. However, the influence of the environmental magnetic field can cause the flip probability of the magnetic tunnel junction device to drift away from 50%, destroying the randomness and uniformity of the random numbers generated by the true random number generator.

[0026] The true random number generator based on a magnetic tunnel junction device provided in this application uses multiple continuous voltage pulse signals to generate random numbers. The final flip probability is obtained by accumulating these signals in an XOR format through in-memory calculations. This ensures that after the multiple continuous voltage pulse signals are applied, the final flip probability of the magnetic tunnel junction device after the accumulation is close to 50%. Furthermore, in this case, there is no need to use long pulses; instead, the magnetic tunnel junction device can be applied by accumulating multiple continuous short pulses. Because short pulses only need to provide energy for a short period of time, they have stronger anti-interference capabilities and lower power consumption than long pulses, which helps improve the durability of the device.

[0027] Specific embodiments are given below to introduce the technical solutions of the present application in detail.

[0028] Figure 2 This is a schematic diagram of the first embodiment of the true random number generator based on the magnetic tunnel junction device provided by this application. Figure 2 The true random number generator provided in this embodiment includes a control circuit 1, a magnetic tunnel junction device 2 and a random number generator 3; wherein,

[0029] The control circuit 1 is configured to provide and apply a plurality of continuous voltage pulse signals to the magnetic tunnel junction device 2 so as to cause the resistance of the magnetic tunnel junction device 2 to oscillate; wherein the voltage amplitudes and pulse widths of the plurality of continuous voltage pulse signals are within a preset range; the plurality of continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device 2; after the plurality of continuous voltage pulse signals act synergistically on the magnetic tunnel junction device 2, the magnetic tunnel junction device 2 accumulates flipping probabilities based on an in-memory calculation, so that a final flipping probability after the accumulation approaches a 50-50 probability;

[0030] The random number generator 3 is used to generate a random number according to the resistance state of the magnetic tunnel junction device 2 after the multiple continuous voltage pulse signals are applied.

[0031] Specifically, the control circuit 1 is used to generate a plurality of continuous voltage pulse signals and control the application time, application sequence and duration of the plurality of continuous voltage pulse signals so as to apply the plurality of continuous voltage pulse signals to the magnetic tunnel junction device 2 .

[0032] It is understood that the magnetic tunnel junction device 2 is a sandwich structure consisting of two magnetic metal layers sandwiched by an insulating layer. The specific structure of the magnetic tunnel junction device 2 is described in the related art and will not be repeated here. Furthermore, the magnetic tunnel junction device 2 is a voltage-controlled magnetic tunnel junction device, i.e., the magnetic tunnel junction device 2 is a voltage-controlled magnetic tunnel junction device.

[0033] It should be noted that the resistance of magnetic tunnel junction device 2 depends on the relative relationship between the magnetization directions of the two magnetic metal layers. When the magnetization directions of the two magnetic metal layers are parallel, magnetic tunnel junction device 2 exhibits a low resistance state (denoted as the first state); when the magnetization directions of the two magnetic metal layers are antiparallel, magnetic tunnel junction device 2 exhibits a high resistance state (denoted as the second state). Therefore, a voltage pulse signal can change the resistance of magnetic tunnel junction device 2 by altering the magnetization directions of the magnetic metal layers.

[0034] It should be noted that the flip probability of the magnetic tunnel junction device 2 refers to the probability of the magnetic tunnel junction device 2 switching from one state to another. It is understandable that the flip probability of the magnetic tunnel junction device 2 affects the randomness and uniformity of the random numbers generated by the true random number generator. The closer the flip probability of the magnetic tunnel junction device 2 is to 50%, the better the randomness and uniformity of the random numbers generated by the true random number generator.

[0035] It should be noted that the pulse width and voltage amplitude of the voltage pulse signal applied to the magnetic tunnel junction device 2 affect the flip probability of the magnetic tunnel junction device 2. The flip probability of the magnetic tunnel junction device 2 corresponding to a voltage pulse signal refers to the flip probability of the magnetic tunnel junction device 2 when the voltage pulse signal is applied to the magnetic tunnel junction device 2.

[0036] Please continue to refer to Figure 1 It is understandable that the flip probabilities corresponding to different pulse widths may be the same or different. A voltage pulse signal with a specific pulse width corresponds to a flip probability of the magnetic tunnel junction device 2. In addition, different voltage amplitudes also correspond to different flip probabilities. A voltage pulse signal with a specific voltage amplitude corresponds to a flip probability of the magnetic tunnel junction device 2.

[0037] In the true random number generator provided by this embodiment, the voltage amplitudes and pulse widths of the multiple continuous voltage pulse signals applied to the magnetic tunnel junction device are within a preset range; the multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device; after the multiple continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates the flipping probabilities based on in-memory calculations, so that the final flipping probability after accumulation approaches a 50-50 probability;

[0038] It should be noted that the preset range is set according to actual needs and is not limited in this embodiment. For example, in one possible implementation, the preset range corresponding to the voltage amplitude is 0.8V to 2V, and the preset range corresponding to the pulse width is 2.5ns to 15ns.

[0039] It is understandable that at least two voltage pulse signals among the multiple continuous voltage pulse signals may have different pulse widths and / or different voltage amplitudes, so that the multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device.

[0040] Furthermore, based on the characteristics of the voltage-controlled magnetic tunnel junction device, when multiple continuous voltage pulse signals are applied to the magnetic tunnel junction device 2, the final accumulated flipping probability of the magnetic tunnel junction device 2 is the flipping probability after the multiple flipping probabilities corresponding to the multiple continuous voltage pulse signals are accumulated in the form of XOR (exclusive OR) through in-memory calculation.

[0041] For the sake of convenience, after the voltage pulse signal is applied to the magnetic tunnel junction device 2, the probability of the magnetic tunnel junction device flipping is recorded as the flipping probability corresponding to the voltage pulse signal, and the difference between 1 and the flipping probability is the non-flipping probability corresponding to the voltage signal.

[0042] The following explains the final probability after accumulation. For example, in one embodiment, the control circuit 1 provides and applies two consecutive voltage pulse signals to the magnetic tunnel junction device 2, which are respectively recorded as the first voltage pulse signal and the second voltage pulse signal, wherein the flip probability corresponding to the first voltage pulse signal is A, and the corresponding non-flip probability is B (B=1-A); the flip probability corresponding to the second voltage pulse signal is D, and the non-flip probability is E(1-D). Then, the final flip probability after accumulation in the form of XOR is the sum of the product of the flip probability corresponding to the first voltage pulse signal and the non-flip probability corresponding to the second voltage pulse signal, and the product of the non-flip probability corresponding to the first voltage pulse signal and the flip probability corresponding to the second voltage pulse signal. That is, the final flip probability after accumulation can be calculated according to the following formula:

[0043] ;

[0044] Where C is the final flip probability after accumulation of magnetic tunnel junction devices;

[0045] A is the flip probability corresponding to the first voltage pulse signal;

[0046] B is the non-flip probability corresponding to the first voltage pulse signal;

[0047] D is the flip probability corresponding to the second voltage pulse signal;

[0048] E is the non-reversal probability corresponding to the second voltage pulse signal.

[0049] It should be noted that when the number of voltage pulse signals included in multiple continuous voltage pulse signals is greater than two, the flip probability after the accumulation of the first two pulse signals can be calculated first. Furthermore, the accumulated flip probability can be used as the flip probability corresponding to a voltage pulse signal, and the flip probability after the accumulation of the voltage pulse signal and the subsequent voltage pulse signal can be further calculated, until all voltage pulse signals are accumulated and processed, and the final flip probability after the accumulation of multiple continuous voltage pulse signals is obtained.

[0050] It can be understood that the flip probability and non-flip probability corresponding to the first voltage pulse signal and the second voltage pulse signal are jointly represented by 0.5 and the flip error. The calculation process of the final flip probability after the accumulation of two consecutive voltage pulse signals is shown in Table 1:

[0051] Table 1

[0052]

[0053] Referring to Table 1, it can be understood that if the rollover errors of multiple continuous voltage pulse signals are e1…en, respectively, then after the multiple continuous voltage pulse signals are applied, the rollover error of the final accumulated rollover probability is less than min (e1…en); where the rollover error is the difference between the rollover probability and 50%. In summary, for a true random number generator, if the random numbers generated are to have good randomness and uniformity, the parameters of the multiple continuous voltage pulse signals output by the control circuit 1 are crucial. The following describes these multiple continuous voltage pulse signals in detail.

[0054] Optionally, in a possible implementation, at least two of the multiple continuous voltage pulse signals have voltage amplitudes corresponding to different flipping probabilities of the magnetic tunnel junction device 2; or, at least two of the multiple continuous voltage pulse signals have pulse widths corresponding to different flipping probabilities of the magnetic tunnel junction device 2; or at least two of the multiple continuous voltage pulse signals have pulse widths and voltage amplitudes corresponding to different flipping probabilities of the magnetic tunnel junction device 2.

[0055] It should be noted that, by making at least two of the multiple continuous voltage pulse signals have voltage amplitudes corresponding to different flipping probabilities of the magnetic tunnel junction device 2, or making at least two of the multiple continuous voltage pulse signals have pulse widths corresponding to different flipping probabilities of the magnetic tunnel junction device 2, or making at least two of the multiple continuous voltage pulse signals have pulse widths and voltage amplitudes corresponding to different flipping probabilities of the magnetic tunnel junction device 2, in this way, by making the voltage amplitudes and / or pulse widths of the multiple continuous voltage pulse signals different, the magnetic tunnel junction device 2 can have different flipping probabilities under the action of different voltage pulse signals, so that the final flipping probability after accumulation tends to a half-probability, thereby increasing the randomness and uniformity of the random numbers generated by the true random number generator.

[0056] Optional, Figure 3 This is a waveform diagram of multiple continuous voltage pulse signals shown in an exemplary embodiment of the present application. Figure 3 ,exist Figure 3 In the example shown in part A of the figure, the voltage amplitudes of the multiple continuous voltage pulse signals are the same, the pulse widths are different, and the pulse widths of the multiple continuous voltage pulse signals gradually increase so that the multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device 2.

[0057] In specific implementation, when applying multiple continuous voltage pulse signals to the magnetic tunnel junction device 2, the voltage amplitudes of the multiple continuous voltage pulse signals can be kept the same, and the pulse width of the voltage pulse signal can be gradually increased according to a preset pulse width increment, thereby obtaining multiple continuous voltage pulse signals. The multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device 2 due to their different pulse widths.

[0058] It should be noted that the preset pulse width increment is set according to actual needs and is not limited in this embodiment.

[0059] In a specific implementation, for example, in one embodiment, Table 2 is a parameter table of multiple continuous voltage pulse signals shown in an exemplary embodiment of the present application:

[0060] Table 2

[0061]

[0062] Referring to Table 2, the magnetic tunnel junction device 2 is initially in the first state. The voltage amplitude of the multiple continuous voltage pulse signals is controlled at 1V, and the preset pulse width increment is 0.1, that is, the pulse width increases by 0.1 each time, to obtain multiple continuous voltage pulse signals. Furthermore, after the multiple continuous voltage pulse signals are sequentially applied to the magnetic tunnel junction device 2, the final flip probability of the magnetic tunnel junction device 2 after accumulation based on the internal calculation is shown in Table 2. It can be seen that after the application of these four continuous voltage pulse signals, the final accumulated flip probability of the magnetic tunnel junction device 2 is 51.2%, which is close to the 50% probability.

[0063] Furthermore, when the magnetic tunnel junction device is initially in the second state, the final flip probability after the action of multiple consecutive voltage pulse signals is as shown in Table 3:

[0064] Table 3

[0065]

[0066] Referring to Table 3, when the magnetic tunnel junction device 2 is initially in the second state, the voltage amplitude of the multiple continuous voltage pulse signals is controlled at 1V, and the preset pulse width increment is 0.1, that is, the pulse width increases by 0.1 each time, to obtain multiple continuous voltage pulse signals. Furthermore, after the multiple continuous voltage pulse signals are sequentially applied to the magnetic tunnel junction device 2, after these four continuous voltage pulse signals are applied, the final flip probability of the magnetic tunnel junction device 2 after the accumulation based on the internal calculation is 50.6%, which is close to the 50-50 probability.

[0067] Please continue to refer to Figure 1 It should be noted that, when the magnetic tunnel junction device 2 is in different states, the curves of the change in flip probability and pulse width may be the same or different. That is, when the magnetic tunnel junction device 2 is in different states, when the same voltage pulse signal acts on the magnetic tunnel junction device 2, the probability of flipping of the magnetic tunnel junction device 2 may be the same or different. Referring to Tables 2 and 3, when multiple consecutive voltage pulse signals act on the magnetic tunnel junction device 2, regardless of whether the magnetic tunnel junction device 2 is initially in the first state or the second state, the final accumulated flip probability can be made to approach a half-and-half probability of 50%, thereby improving the randomness and uniformity of the random numbers generated by the true random number generator.

[0068] Optional, in Figure 3 In the example shown in part B, the pulse widths of the multiple continuous voltage pulse signals are the same, the voltage amplitudes of the multiple continuous voltage pulse signals are different, and the voltage amplitudes of the multiple continuous voltage pulse signals gradually increase, so that the multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device 2.

[0069] Specifically, in one possible implementation, when applying multiple continuous voltage pulse signals to the magnetic tunnel junction device 2, the pulse widths of the multiple continuous voltage pulse signals can be maintained constant. Furthermore, the voltage amplitudes of the voltage pulse signals are gradually increased according to a preset voltage amplitude increment, thereby generating multiple continuous voltage pulse signals. The multiple continuous voltage pulse signals have different voltage amplitudes, corresponding to different flipping probabilities of the magnetic tunnel junction device 2.

[0070] It should be noted that the preset voltage amplitude increment is set according to actual needs and is not limited in this embodiment.

[0071] In specific implementation, for example, in one embodiment, Table 4 is a parameter table of multiple continuous voltage pulse signals shown in another exemplary embodiment of the present application:

[0072] Table 4

[0073]

[0074] Referring to Table 4, in a specific implementation, the pulse width of the multiple continuous voltage pulse signals is controlled at 0.5n, and the preset voltage amplitude increment is set to 0.2, that is, the voltage amplitude is increased by 0.2 each time, to obtain multiple continuous voltage pulse signals. Furthermore, after applying these multiple continuous voltage pulse signals to the magnetic tunnel junction device 2, the final flip probability of the magnetic tunnel junction device 2, based on the accumulated calculation in the memory, is 47.1%, approaching the 50 / 50 probability.

[0075] Optional, please refer to Figure 3 ,exist Figure 3 In the example shown in Section C of FIG, the pulse widths and voltage amplitudes of the multiple continuous voltage pulse signals are different. It should be noted that when the pulse widths and voltage amplitudes are different, the pulse widths and voltage amplitudes can increase gradually according to a preset increment or can vary completely randomly, and this is not limited in this embodiment.

[0076] In a specific implementation, for example, in one embodiment, Table 5 is a parameter table of multiple continuous voltage pulse signals shown in another exemplary embodiment of the present application:

[0077] Table 5

[0078]

[0079] Please refer to Table 5. In the specific implementation, by making the voltage amplitudes or pulse widths of multiple continuous voltage pulse signals different, each voltage pulse signal can correspond to a different flipping probability of the magnetic tunnel junction device 2, so as to combat the problem of flipping probability drift, so that the final flipping probability after the accumulation of multiple continuous voltage pulse signals can approach a half probability of 50%.

[0080] Optional, please continue to refer to Figure 1 , at least one voltage pulse signal among the multiple continuous voltage pulse signals has a voltage amplitude and / or pulse width corresponding to the target flip probability; wherein, the target flip probability tends to the half probability.

[0081] Specifically, at least one of the plurality of continuous voltage pulse signals has a voltage amplitude and / or pulse width corresponding to a target flip probability, and the target flip probability tends to be 50-50. For example, in one embodiment, the target flip probability ranges from 45% to 55%.

[0082] Optionally, a specified number of the multiple continuous voltage pulse signals have voltage amplitudes and / or pulse widths corresponding to a specified flip probability interval of the magnetic tunnel junction device 2; wherein the specified flip probability interval is 10% to 90%.

[0083] Preferably, the specified flip probability range is 30% to 70%. It should be noted that the specific number of the specified number of voltage pulse signals in the plurality of continuous voltage pulse signals is set according to actual needs and is not limited in this embodiment.

[0084] Specifically, the random number generator 3 is a device capable of generating random numbers. The random number generator 3 can detect the resistance state of the magnetic tunnel junction device 2 after a plurality of continuous voltage pulse signals are applied, and then generate a random number according to the resistance state.

[0085] It should be noted that due to the uncertainty of the effect of the voltage pulse signal, when multiple continuous voltage pulse signals are applied to the magnetic tunnel junction device 2, the resistance state of the magnetic tunnel junction device 2 is also uncertain. The random number generator 3 can use the uncertainty of the resistance state of the magnetic tunnel junction device 2 to generate random numbers.

[0086] In a specific implementation, for example, in one embodiment, the high resistance state of the magnetic tunnel junction device 2 corresponds to the number "1", and the low resistance state of the magnetic tunnel junction device 2 corresponds to the number "0". After detecting the resistance state of the magnetic tunnel junction device after multiple consecutive voltage pulse signals are applied, the random number generator 3 generates a corresponding random number.

[0087] The true random number generator provided in this embodiment comprises a controller, a magnetic tunnel junction device, and a random number generator. The controller circuit provides and applies multiple continuous voltage pulse signals to the magnetic tunnel junction device, thereby causing the random number generator to generate random numbers based on the resistance state of the magnetic tunnel junction device after the multiple continuous voltage pulse signals are applied. Since the voltage amplitudes and pulse widths of the multiple voltage pulse signals are within a preset range, and the multiple voltage pulse signals correspond to different flip probabilities of the magnetic tunnel junction device, based on the characteristics of the magnetic tunnel junction device, after the multiple continuous voltage pulse signals act in conjunction with each other on the magnetic tunnel junction device, the flip summaries corresponding to each voltage pulse signal are accumulated in an exclusive-OR form. Since the multiple voltage pulse signals correspond to different flip probabilities, the coordinated action of the multiple continuous voltage pulse signals can combat the problem of flip probability drift, causing the final flip probability of the magnetic tunnel junction device, after accumulation based on in-memory calculations, to approach an expected value, thereby improving the randomness and uniformity of the random numbers generated by the true random number generator.

[0088] Optional, please refer to Figure 1 and Figure 2 In one possible implementation, the pulse widths of the multiple continuous voltage pulse signals are within a preset first range; wherein the upper limit value of the first range is less than or equal to a stable pulse width; and the stable pulse width is a pulse width at which the flipping probability of the magnetic tunnel junction device 2 reaches an expected stable state.

[0089] Please refer to Figure 1 The flip probability of the magnetic tunnel junction device 2 oscillates as the pulse width continues to increase, and reaches an expected stable state when the pulse width increases to a certain value. The pulse width when the flip probability reaches the expected stable state is recorded as the stable pulse width.

[0090] In this embodiment, the pulse widths of the plurality of continuous voltage pulse signals are set within a preset first range, and an upper limit value of the first range is set to be less than or equal to a stable pulse width.

[0091] It should be noted that the specific value of the first range is set according to actual needs and is not limited in this embodiment. For example, in one embodiment, the first range of the pulse width of the plurality of continuous voltage pulse signals is 0-15 ns.

[0092] Referring to the previous description, it can be understood that, through the synergistic effect of multiple continuous voltage pulse signals corresponding to different flipping probabilities, the final flipping probability after accumulation can be made to approach a half-probability of 50%. At this time, since the final flipping probability after accumulation is close to 50%, there is no need to pay attention to the flipping probability corresponding to each pulse signal itself, and there is no need to generate random numbers when the magnetic tunnel junction device 2 is in a metastable state and the oscillation drops to a very low level. The pulse width of each pulse signal can be made less than or equal to the stable pulse width, that is, by applying multiple short pulses, unpredictable, uniformly distributed random numbers are generated.

[0093] Compared to traditional true random number generators, the true random number generator provided in this embodiment significantly reduces pulse width, converting long pulses into short pulses. This allows the generator to influence magnetic tunnel junction devices within a shorter timeframe, making it more likely for their magnetization states to undergo random changes, further enhancing the randomness of the generated random numbers. Furthermore, short pulses require only a short duration of energy supply, resulting in lower power consumption and improved device durability compared to long pulses.

[0094] Corresponding to the aforementioned embodiment of a true random number generator based on a magnetic tunnel junction device, the present application also provides an embodiment of a random number generation method.

[0095] Figure 4 This is a flowchart of the first embodiment of the random number generation method provided by this application. Please refer to Figure 4 The random number generation method provided in this embodiment is implemented based on the true random number generator based on the magnetic tunnel junction device provided in this application, and the random number generation method includes:

[0096] S101. Provide and apply multiple continuous voltage pulse signals to a voltage-controlled magnetic tunnel junction device to cause the resistance of the magnetic tunnel junction device to oscillate; wherein the voltage amplitude and pulse width of the multiple continuous voltage pulse signals are within a preset range; the multiple continuous voltage pulse signals correspond to different flipping probabilities of the voltage-controlled magnetic tunnel junction device, so that after the multiple continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates the flipping probabilities based on in-memory calculations, so that the final flipping probability after accumulation tends to a half-and-half probability.

[0097] S102 : Generate a random number according to the resistance state of the magnetic tunnel junction device after the multiple continuous voltage pulse signals are applied.

[0098] The specific implementation principle and implementation process of the method provided in this embodiment are similar to the implementation principle of the aforementioned true random number generator, and will not be repeated here.

[0099] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A true random number generator based on a magnetic tunnel junction device, characterized in that: The true random number generator includes a control circuit, a magnetic tunnel junction device and a random number generator; the magnetic tunnel junction device is a voltage-controlled magnetic tunnel junction device; wherein, The control circuit is configured to provide and apply a plurality of continuous voltage pulse signals to the magnetic tunnel junction device so as to cause the resistance of the magnetic tunnel junction device to oscillate; wherein the voltage amplitudes and pulse widths of the plurality of continuous voltage pulse signals are within a preset range; the plurality of continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device; after the plurality of continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates flipping probabilities in an exclusive-OR form based on an in-memory calculation, and a flipping error of a final flipping probability after the accumulation is less than a minimum flipping error of each voltage pulse signal in the plurality of continuous voltage pulse signals; at least one voltage pulse signal in the plurality of continuous voltage pulse signals has a voltage amplitude and / or pulse width corresponding to a target flipping probability; the target flipping probability approaches a half-and-half probability, the flipping error of the final flipping probability after the accumulation is less than the flipping error of the at least one voltage pulse signal, and the final flipping error after the accumulation approaches a half-and-half probability; wherein the flipping error is the difference between the flipping probability and the half-and-half probability; The random number generator is used to generate a random number according to the resistance state of the magnetic tunnel junction device after the multiple continuous voltage pulse signals are applied.

2. The true random number generator according to claim 1, wherein The pulse widths of the multiple continuous voltage pulse signals are within a preset first range; wherein the upper limit value of the first range is less than or equal to the stable pulse width; the stable pulse width is the pulse width when the flip probability of the magnetic tunnel junction device reaches the expected stable state.

3. The true random number generator according to claim 1, wherein A specified number of voltage pulse signals among the multiple continuous voltage pulse signals have voltage amplitudes and / or pulse widths corresponding to a specified flip probability interval of the magnetic tunnel junction device; wherein the specified flip probability interval is 10% to 90%.

4. The true random number generator according to claim 1, wherein At least two voltage pulse signals among the plurality of continuous voltage pulse signals have voltage amplitudes corresponding to different flipping probabilities of the magnetic tunnel junction device.

5. The true random number generator according to claim 1, wherein: At least two voltage pulse signals among the plurality of continuous voltage pulse signals have pulse widths corresponding to different switching probabilities of the magnetic tunnel junction device.

6. The true random number generator according to claim 1, wherein: At least two voltage pulse signals among the plurality of continuous voltage pulse signals have pulse widths and voltage amplitudes corresponding to different flipping probabilities of the magnetic tunnel junction device.

7. The true random number generator according to claim 1, wherein: The voltage amplitudes of the multiple continuous voltage pulse signals are the same, the pulse widths of the multiple continuous voltage pulse signals are different, and the pulse widths of the multiple continuous voltage pulse signals gradually increase, so that the multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device.

8. The true random number generator according to claim 1, wherein: The pulse widths of the multiple continuous voltage pulse signals are the same, the voltage amplitudes of the multiple continuous voltage pulse signals are different, and the voltage amplitudes of the multiple continuous voltage pulse signals gradually increase, so that the multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device.

9. A random number generation method, characterized in that: The random number generation method is implemented based on the true random number generator based on the magnetic tunnel junction device according to any one of claims 1 to 8, and the random number generation method includes: A plurality of continuous voltage pulse signals are provided and applied to a magnetic tunnel junction device to cause the resistance of the magnetic tunnel junction device to oscillate; wherein the magnetic tunnel junction device is a voltage-controlled magnetic tunnel junction device; the voltage amplitudes and pulse widths of the plurality of continuous voltage pulse signals are within a preset range; the plurality of continuous voltage pulse signals correspond to different flipping probabilities of the voltage-controlled magnetic tunnel junction device; after the plurality of continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates flipping probabilities in an exclusive-OR form based on an in-memory calculation, and a flipping error of a final flipping probability after the accumulation is less than a minimum flipping error of each voltage pulse signal in the plurality of continuous voltage pulse signals; at least one voltage pulse signal in the plurality of continuous voltage pulse signals has a voltage amplitude and / or pulse width corresponding to a target flipping probability; the target flipping probability approaches a 50-50 probability, the flipping error of the final flipping probability after the accumulation is less than the flipping error of the at least one voltage pulse signal, and the final flipping error after the accumulation approaches a 50-50 probability; wherein the flipping error is the difference between the flipping probability and the 50-50 probability; A random number is generated according to the resistance state of the magnetic tunnel junction device after the application of the multiple continuous voltage pulse signals is completed.

Images