Semiconductor device processing methods, systems and equipment

Abstract

The present invention discloses a semiconductor device processing method, system and semiconductor device processing equipment, wherein the semiconductor device processing method controls the suction arm of the material transfer robot to move to the top of the semiconductor device after the thinned semiconductor device is cleaned at the cleaning device; then, the suction arm of the material transfer robot is moved down to the deceleration position at a first speed, then decelerated and continued to move down; in the process of the suction arm moving down, the vacuum degree of the suction arm and the pressure value of the pressure sensor on the suction arm are obtained in real time, and it is determined whether to move the suction arm up and then unload the material or to stop the suction arm or move up and alarm. The present invention changes the conventional method of using a fixed material picking position when the material transfer robot picks up the material, and can effectively avoid the problem of ineffective suction or crushing of the semiconductor device due to the deviation between the actual thickness of the semiconductor device and the target thickness, thereby improving the reliability and safety of material transfer.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular to a semiconductor device processing method, system and semiconductor device processing equipment. Background Art

[0002] In the processing of semiconductor devices such as wafers, thinning equipment is used to thin the semiconductor devices.

[0003] The patent document with application publication number CN115338717A discloses a typical thinning device, in which the wafer is moved to a cleaning device for cleaning after thinning, and then a material transfer robot moves the cleaned wafer into a material box.

[0004] The material transfer robot usually uses a Y-fork-shaped suction arm disclosed in patent documents such as authorization announcement numbers CN107342247B and US9653337B2 to suction wafers.

[0005] Usually, the material taking position to which the adsorption arm moves downward when absorbing the semiconductor device at the cleaning device is determined in advance according to the target thickness to be thinned for each semiconductor device, and this material taking position is fixed.

[0006] During subsequent thinning, after determining the type of semiconductor device to be thinned, the material picking position corresponding to the semiconductor device can be directly obtained to control the material picking of the adsorption arm.

[0007] However, since the detection accuracy of the thickness measuring mechanism is limited to a certain range, the thickness of the thinned semiconductor device may deviate from the target thickness. This results in the risk of failure to reliably adsorb the semiconductor device or the adsorption arm exerting excessive pressure on the semiconductor device, causing damage, when picking up materials at a fixed picking position. Summary of the invention

[0008] The purpose of the present invention is to solve the above problems existing in the prior art and to provide a semiconductor device processing method, system and semiconductor device processing equipment.

[0009] The purpose of the present invention is achieved through the following technical solutions:

[0010] A semiconductor device processing method comprises the following steps:

[0011] S1, after the thinned semiconductor device is cleaned in the cleaning device, controlling the suction arm of the material transfer robot to move to the top of the semiconductor device;

[0012] S2, moving the suction arm of the material transfer robot downward to a deceleration position at a first speed;

[0013] S3, slowing down the suction arm of the material transfer robot and continuing to move downward;

[0014] S4, in the process of the adsorption arm moving downward, the vacuum degree of the adsorption arm and the pressure value of the pressure sensor on the adsorption arm are obtained in real time, and based on this, it is determined whether to move the adsorption arm upward and then unload the material or to stop the adsorption arm from moving or move it upward and alarm.

[0015] Preferably, in S2, the deceleration position is a position where the distance between the top of the unthinned semiconductor device and the top surface of the unthinned semiconductor device is between 1-10 microns when the unthinned semiconductor device is placed on the turntable assembly of the cleaning device.

[0016] Preferably, the height of the top surface of the unthinned semiconductor device placed on the turntable assembly is determined according to the height of the top surface of the turntable assembly and the thickness measured when the unthinned semiconductor device is placed on the wafer stage.

[0017] Preferably, in S3, the adsorption arm is first decelerated to a second speed which is less than the first speed. When the adsorption surface of the adsorption arm moves down to maintain a distance of 1-3 microns from the top surface of the thinned semiconductor device, the adsorption arm is decelerated to a third speed and continues to move down. The third speed does not exceed 2 microns / second.

[0018] Preferably, the adsorption surface of the adsorption arm is provided with a deformable adsorption head protruding from the adsorption surface, and the pressure sensor is also provided at the adsorption surface.

[0019] Preferably, there are three deformable adsorption heads which are evenly distributed on the adsorption arm, and there are three pressure sensors which are located beside each deformable adsorption head.

[0020] Preferably, the bottom of the detection point of the pressure sensor is lower than the bottom of the deformable adsorption head;

[0021] In S4, during the downward movement of the adsorption arm, a group of pressure values ​​of the pressure sensor are obtained in real time, and before each pressure value reaches the pressure threshold, it is determined in real time whether the maximum value of the difference between the two pressure values ​​in a group of pressure values ​​exceeds the difference threshold. If so, the adsorption arm is stopped from moving or moved up and an alarm is sounded; otherwise, according to the vacuum degree of the adsorption arm obtained in real time and the pressure value of the pressure sensor on the adsorption arm, it is determined whether to move the adsorption arm up and then unload the material or to stop moving or move up and an alarm is sounded.

[0022] Preferably, when the bottom of the detection point of the pressure sensor is lower than the bottom of the deformable adsorption head; in S4, it is determined whether the vacuum degree of the adsorption arm reaches the vacuum threshold before the pressure value of the pressure sensor reaches the pressure threshold according to the vacuum degree of the adsorption arm obtained in real time and the pressure value of the pressure sensor on the adsorption arm. If so, the adsorption arm is reversely lifted to unload the material; if not, the adsorption arm is stopped or moved upward and an alarm is sounded.

[0023] Preferably, the bottom of the detection point of the pressure sensor is flush with the bottom of the deformable adsorption head;

[0024] In S4, the sequence of when the vacuum degree of the adsorption arm reaches the vacuum threshold and when at least one of the pressure sensors generates a pressure value is determined in real time;

[0025] If it is determined that before the vacuum degree of the adsorption arm reaches the vacuum threshold, at least one of the pressure sensors generates a pressure value, the adsorption arm stops moving or moves upward and an alarm is sounded;

[0026] If it is determined that the vacuum degree of the adsorption arm reaches the vacuum threshold before at least one of the pressure sensors generates pressure, the adsorption arm is moved upward and then the material is unloaded.

[0027] Semiconductor device processing system, including:

[0028] A first moving control unit is used to control the suction arm of the material transfer robot to move to the top of the semiconductor device after the thinned semiconductor device is cleaned in the cleaning device;

[0029] A second movement control unit, used to make the suction arm of the material transfer robot move down to a deceleration position at a first speed;

[0030] A third movement control unit is used to slow down the suction arm of the material transfer robot and continue to move downward;

[0031] The abnormality detection control unit is used to obtain the vacuum degree of the adsorption arm and the pressure value of the pressure sensor on the adsorption arm in real time during the downward movement of the adsorption arm, and determine whether to move the adsorption arm upward and then unload the material or to stop the adsorption arm from moving or move it upward and alarm accordingly.

[0032] A semiconductor device processing device comprises a processor and a memory, wherein the memory stores a program executable by the processor, and when the program is executed, any semiconductor device processing method as described above is implemented.

[0033] The advantages of the technical solution of the present invention are mainly reflected in:

[0034] The present invention changes the conventional method of using a fixed material picking position when a material transfer robot picks up materials, and adopts a dynamic material picking position and controls the material picking action of the adsorption arm by detecting the vacuum value and the pressure value when picking up materials. This can effectively avoid the problem of ineffective suction or crushing of semiconductor devices due to the deviation between the actual thickness of the semiconductor device and the target thickness, thereby improving the reliability and safety of material transfer.

[0035] The process of the present invention can control the speed so that the adsorption action can take into account both efficiency and safety.

[0036] The present invention arranges a pressure sensor on the adsorption surface of the adsorption arm, and does not require major improvements to the adsorption arm, especially does not require improvements to the thickness of the adsorption arm. It can be effectively applied to the structure of the existing adsorption arm and is easy to promote and apply.

[0037] The present invention adopts a plurality of pressure sensors, and can detect the abnormal state of the adsorption arm while controlling the adsorption, and can effectively identify different fault conditions so as to carry out targeted processing.

[0038] Through structural improvements, the cleaning device of the present invention can adjust the height of the swing arm to maintain the same distance between the nozzle and semiconductor devices of different thicknesses, so that cleaning can be performed according to the same cleaning parameters, which is beneficial to ensuring the cleaning quality and consistency of semiconductor devices of different thicknesses. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 is a top view of the material transfer robot of the present invention;

[0040] Figure 2 is a bottom view of the adsorption arm of the present invention;

[0041] Figure 3 It is a process schematic diagram of the semiconductor device processing method of the present invention;

[0042] Figure 4 is a schematic diagram of a cleaning device of the present invention;

[0043] Figure 5 It is a schematic diagram of a process in which the bottom of the detection point of the pressure sensor is lower than the bottom of the deformable adsorption head in the semiconductor device processing method of the present invention;

[0044] Figure 6 It is a partial schematic diagram in which the bottom of the detection point of the pressure sensor on the adsorption arm of the present invention is lower than the bottom of the deformable adsorption head;

[0045] Figure 7 It is a partial schematic diagram showing that the bottom of the detection point of the pressure sensor on the adsorption arm of the present invention is flush with the bottom of the deformable adsorption head;

[0046] Figure 8 It is a schematic diagram of a process in which the bottom of a detection point of a pressure sensor is flush with the bottom of a deformable adsorption head in a semiconductor device processing method of the present invention;

[0047] Fig. 9 It is a schematic diagram of the process of the semiconductor device processing method of the present invention with adsorption arm abnormality recognition. DETAILED DESCRIPTION

[0048] The purpose, advantages and features of the present invention will be illustrated and explained by the non-limiting description of the following preferred embodiments. These embodiments are only typical examples of the application of the technical solution of the present invention, and any technical solution formed by equivalent replacement or equivalent transformation falls within the scope of protection claimed by the present invention.

[0049] In the description of the scheme, it should be noted that the terms "center", "upper", "lower", "left", "right", "front", "back", "vertical", "horizontal", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience and simplification of description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0050] Example 1

[0051] The semiconductor device processing method disclosed by the present invention is described below in conjunction with the accompanying drawings. Figure 1 As shown in FIG. 1 , the semiconductor device processing method is based on a material transfer robot 100. The specific structure of the material transfer robot 100 can refer to the prior art. Like the prior art, the material transfer robot 100 uses a Y-shaped suction arm 101 to suction the semiconductor device at the cleaning device 200. The difference from the prior art is that: Figure 2 As shown, in the present invention, a pressure sensor 102 is further provided at the adsorption surface 103 of the adsorption arm 101 .

[0052] Correspondingly, as attached Figure 3 As shown, the semiconductor device processing method includes the following steps:

[0053] S1, after the thinned semiconductor device is cleaned in the cleaning device 200, the suction arm 101 of the material transfer robot 100 is controlled to move to the top of the semiconductor device;

[0054] S2, moving the suction arm 101 of the material transfer robot 100 downward to a deceleration position at a first speed, and the first speed can be set as needed and is not limited here;

[0055] S3, slowing down the suction arm 101 of the material transfer robot 100 and continuing to move downward;

[0056] S4, when the adsorption arm 101 moves downward, the vacuum degree of the adsorption arm 101 and the pressure value of the pressure sensor 102 on the adsorption arm 101 are obtained in real time, and it is determined whether to move the adsorption arm 101 upward and then unload the material or to stop the adsorption arm 101 or move it upward and alarm.

[0057] In S1, when the cleaning device 200 cleans the semiconductor device after thinning, it can be used as in the prior art, using a swinging cleaning component 240 to cooperate with the semiconductor device driven to rotate by the turntable component 220 to achieve cleaning. The swinging cleaning component 240 drives the nozzle 246 arranged thereon to swing and spray water, air, etc. through a horizontally swinging swing arm 245 to achieve cleaning.

[0058] During cleaning, the swing arm 245 of the existing swing-type cleaning assembly 240 swings at a fixed height. However, due to the large differences in the thickness to which different types of semiconductor devices need to be thinned, when the thinned semiconductor devices are placed on the cleaning device 200, there will be differences in the distance between their top surfaces and the nozzle 246. During cleaning, the fixed-height nozzle 246 cannot guarantee the cleaning quality when performing cleaning according to the same cleaning parameters.

[0059] In order to solve such a problem, the present invention has creatively transformed the structure of the cleaning device 200, as shown in the attached Figure 4 As shown, like the prior art, the cleaning device 200 includes a cleaning tank 210 and a turntable assembly 220 disposed in the cleaning tank 210 for carrying semiconductor devices and driving the semiconductor devices to rotate. The difference from the prior art cleaning device 200 is that in this embodiment, the cleaning device 200 includes a cover body 230 connected to the top of the cleaning tank 210 and capable of automatically opening and closing relative to the cleaning tank 210. The specific structure of the cover body 230 capable of automatically opening and closing relative to the cleaning tank 210 is a known technology, which is not an innovation of the present invention and will not be described in detail here.

[0060] As attached Figure 4As shown, the swing-type cleaning assembly 240 is arranged on the cover 230, and correspondingly, the swing-type cleaning assembly 240 may include a height adjuster 241 located outside the cover 230, and the height adjuster 241 is, for example, a small hydraulic cylinder or an electric cylinder, etc., and preferably a servo module can be used, and the servo module is connected to a rotary driver 242 and drives the rotary driver 242 to move up and down, and the rotary driver can also be connected to a guide assembly 243 outside the cover 230. Of course, the guide assembly 243 is not necessary and can be omitted. The rotary driver 242 can be, for example, a servo turntable, and more preferably, the rotary driver 242 can be a rotary cylinder, and the rotary disk of the rotary cylinder is connected to a rotary shaft 244 that is penetrated on the cover 230 and can rotate and retract relative to the cover 230. The cover 230 can also be provided with a sealing sleeve and / or a shaft sleeve (not shown in the figure) that is sleeved on the outer periphery of the rotary shaft 244. One end of the rotating shaft 244 extending to the inner side of the cover body 230 is connected to a swing arm 245 , and the spray head 246 is disposed on the swing arm 245 .

[0061] Therefore, during cleaning, the height of the nozzle 246 can be adjusted according to the thickness of the semiconductor device after thinning determined by the thickness measuring mechanism, so that the nozzle 246 maintains the same gap with semiconductor devices of various thicknesses, so that unified cleaning parameters can be used to ensure the cleaning consistency of different types of semiconductor devices.

[0062] In S2, the deceleration position is a position where the distance between the top of the unthinned semiconductor device and the top surface of the unthinned semiconductor device is between 1-10 microns when the unthinned semiconductor device is placed on the turntable assembly 220 of the cleaning device 200. Preferably, the deceleration position is a position about 5 microns above the top surface of the unthinned semiconductor device on the turntable assembly 220. This can effectively ensure that the adsorption arm 101 can transfer materials with the highest possible efficiency and effectively avoid collision between the adsorption arm and the semiconductor device.

[0063] Furthermore, the top surface height of the unthinned semiconductor device placed on the turntable assembly 220 is also determined based on the height of the top surface of the turntable assembly 220 and the thickness measured by the thickness measuring mechanism when the unthinned semiconductor device is placed on the wafer stage.

[0064] In S3, the downward movement speed of the adsorption arm 101 can be directly reduced to a relatively low speed, for example, reduced to 5 μm / s, so as to ensure safety, but this will cause a certain efficiency loss.

[0065] Better, as attached Figure 5As shown, the downward movement speed of the adsorption arm 101 is first reduced to a second speed that is less than the first speed, and the second speed is, for example, 10 μm / s. When the bottom of the deformable adsorption head on the adsorption arm 101 moves down to maintain a distance of 1-3 μm from the top surface of the thinned semiconductor device, the adsorption arm 101 is reduced to a third speed and continues to move downward. The third speed does not exceed 2 μm / s, which can effectively achieve a balance between efficiency and safety.

[0066] As attached Figure 2 , Attachment Figure 6 , Attachment Figure 7 As shown, in order to avoid the change of the thickness of the adsorption arm 101 caused by the setting of the pressure sensor 102, the downward adsorption surface 103 of the adsorption arm 101 is provided with a deformable adsorption head 104 protruding from the adsorption surface 103, and the deformable adsorption head 104 corresponds to the adsorption holes at the adsorption surface 103 of the adsorption arm 101 one by one and is connected so that the deformable adsorption head 104 can generate an adsorption force. The deformable adsorption head 104 is made of a deformable material such as silicone, rubber, soft plastic, etc., and can be fixed on the adsorption arm 101 by a deformable manner such as snap-on and / or gluing. The number of the deformable adsorption heads 104 can be designed according to needs. Preferably, as in the prior art, the number of adsorption holes at the adsorption surface 103 is three and evenly distributed on the two forked ends and the intersection area of ​​the two forks of the adsorption arm 101, and the number of the deformable adsorption heads 104 is correspondingly three and each is installed at one adsorption hole.

[0067] At the same time, the pressure sensor 102 is arranged at the adsorption surface 103. Figure 6 As shown in FIG. 1 , the bottom of the detection point 105 of the pressure sensor 102 may slightly protrude from the bottom of the deformable adsorption head 104. Figure 7 As shown, the bottom of the detection point 105 of the pressure sensor 102 is flush with the bottom of the deformable adsorption head 104 .

[0068] The number of the pressure sensors can be designed as needed. In a feasible embodiment, the number of the pressure sensor 102 can be only one, and it can be set at a suitable position of the adsorption arm 101. At this time, in S4, different identification methods can be adopted according to the position of the detection point of the pressure sensor 102.

[0069] In one embodiment, as shown in the attached Figure 5As shown, when the bottom of the detection point of the pressure sensor 102 slightly protrudes below the deformable suction head 104, in S4, during the downward movement of the suction arm 101, it can be determined whether the vacuum degree of the suction arm 101 reaches the vacuum threshold before the pressure value of the pressure sensor 102 reaches the pressure threshold according to the vacuum degree of the suction arm 101 obtained in real time and the pressure value of the pressure sensor 102 on the suction arm 101. If so, it means that before the pressure reaches the pressure threshold, the deformable suction head on the suction arm has contacted the top surface of the semiconductor device and adsorbed the semiconductor device, so the suction arm 101 is reversely lifted for unloading. If not, that is, the pressure value of the pressure sensor has reached the pressure threshold, but the vacuum degree of the suction arm has not reached the vacuum threshold. At this time, the deformable suction head is not in contact with the semiconductor device at the beginning, but the deformable suction head has begun to deform and exert a certain pressure on the semiconductor device, which indicates that there is an adsorption abnormality and the suction arm cannot continue to move downward. Correspondingly, the suction arm 101 stops moving or moves upward and an alarm is sounded. The pressure threshold can be designed as needed. Preferably, the pressure threshold can be slightly greater than the pressure value measured by the pressure sensor when the vacuum degree of the adsorption arm just meets the requirement, so as to avoid excessive pressure exerted by the deformable suction head on the wafer as much as possible.

[0070] In another embodiment, when the bottom of the detection point 105 of the pressure sensor 102 is flush with the bottom of the deformable adsorption head 104, as shown in the attached Figure 8 As shown, in S4, during the downward movement of the adsorption arm 101, the order in which the vacuum degree of the adsorption arm 101 reaches the vacuum threshold and at least one of the pressure sensors 102 generates a pressure value can be determined based on the vacuum degree of the adsorption arm 101 obtained in real time and the pressure value of the pressure sensor 102 on the adsorption arm 101.

[0071] If it is determined that the pressure sensor 102 generates a pressure value before the vacuum degree of the adsorption arm 101 reaches the vacuum threshold, then it is determined that the deformable adsorption head has contacted the top surface of the semiconductor device, but the vacuum degree of the adsorption arm has not reached the requirement, which indicates that there may be a problem with the vacuum system, or there is an abnormality in the adsorption arm, such as a problem with the state and / or shape. At this time, it is necessary to prevent the adsorption arm from continuing to move downward, thereby causing the deformable adsorption head, or even the adsorption arm to apply excessive pressure to the semiconductor device, so the adsorption arm 101 is stopped from moving or moved upward and an alarm is sounded;

[0072] If it is determined that the vacuum degree of the adsorption arm 101 reaches the vacuum threshold before the pressure sensor 102 generates pressure, this indicates that the deformable adsorption head on the adsorption arm has begun to contact the semiconductor device and adsorb the semiconductor device. At this time, the adsorption arm 101 can be moved up and then unloaded.

[0073] Although only one pressure sensor is provided to achieve the desired purpose, in a preferred embodiment, the number of the pressure sensors can be multiple, for example, as shown in the attached Figure 2 As shown, there are three pressure sensors 102 and they are located next to each deformable adsorption head 104. The reason for this design is that: in actual use, the adsorption arm 101 may have its own deformation, installation error, control error, etc., which may cause the bottoms of the three deformable adsorption heads to be not on the same horizontal plane. At this time, there is a problem that some deformable adsorption heads 104 contact the semiconductor device first, and some deformable adsorption heads 104 contact the semiconductor device later. At the same time, due to the possible failure of the vacuum system, if there is only one pressure sensor 102, when an abnormality is identified, it is difficult to identify whether the abnormality is due to a vacuum system failure or an abnormality in the adsorption arm. The use of three pressure sensors 102 can promptly identify whether there is an abnormality in the adsorption arm.

[0074] Specifically, when there are three pressure sensors, in order to successfully detect the abnormality of the adsorption arm, it is necessary to make the detection points 105 of the three pressure sensors 102 slightly protrude from the bottom of the deformable adsorption head 104, and as shown in the attached figure Fig. 9 As shown, in S4, during the process of the adsorption arm slowly moving downward, a group of pressure values ​​of the pressure sensors 102 can be obtained in real time, and before the pressure values ​​of each pressure sensor 102 reach the pressure threshold, it is determined in real time whether the maximum value of the pairwise difference in a group of pressure values ​​exceeds the difference threshold; when calculating the pairwise difference in a group of pressure values, if a pressure sensor does not generate a pressure value, its pressure value is determined to be 0, and the difference with the pressure values ​​measured by other pressure sensors is calculated accordingly.

[0075] If so, it indicates that there is an abnormality in the adsorption arm 101 and it cannot continue to move downward. At this time, the adsorption arm 101 stops moving or moves upward and an alarm is sounded. At this time, the deformable adsorption head may not have contacted the semiconductor device.

[0076] On the contrary, that is, the maximum value of the difference between any two of the three pressure values ​​is less than the difference threshold, then based on the vacuum degree of the adsorption arm 101 obtained in real time and the pressure value of the pressure sensor 102 on the adsorption arm 101, it is determined whether to move the adsorption arm 101 upward and then unload the material or to stop moving the adsorption arm 101 or move upward and issue an alarm.

[0077] When there are three pressure sensors, the maximum value of the pressure values ​​measured by the three pressure sensors 102 can be compared with the pressure threshold. If the vacuum degree of the adsorption arm 101 meets the requirement before the maximum value reaches the pressure threshold, the adsorption arm is moved up and the material is unloaded. Otherwise, the adsorption arm is stopped or moved up and reset. Of course, in other embodiments, the judgment can also be made based on whether the mean, median or minimum value of the pressure values ​​measured by the three pressure sensors 102 reaches the pressure threshold, which will not be elaborated here.

[0078] When the bottoms of the detection points of the three pressure sensors are flush with the bottom of the deformable adsorption head, in S4, if it is determined that any of the pressure sensors 102 generates a pressure value before the vacuum degree of the adsorption arm 101 reaches the vacuum threshold, the adsorption arm is stopped or moved upward to reset. Correspondingly, before any of the pressure sensors generates a pressure value, the vacuum degree of the adsorption arm reaches the vacuum threshold, and the adsorption arm is moved upward to unload the material.

[0079] Example 2

[0080] This embodiment discloses a semiconductor device processing system, including:

[0081] A first moving control unit is used to control the suction arm 101 of the material transfer robot 100 to move above the semiconductor device after the thinned semiconductor device is cleaned at the cleaning device 200;

[0082] A second movement control unit, used to make the suction arm 101 of the material transfer robot 100 move downward to a deceleration position at a first speed;

[0083] A third movement control unit is used to slow down the suction arm 101 of the material transfer robot 100 and continue to move downward;

[0084] The abnormality detection control unit is used to obtain the vacuum degree of the adsorption arm 101 and the pressure value of the pressure sensor 102 on the adsorption arm 101 in real time during the downward movement of the adsorption arm 101, and determine whether to move the adsorption arm 101 upward and then unload the material or to stop the adsorption arm 101 from moving or move upward and alarm accordingly.

[0085] Example 3

[0086] This embodiment discloses a semiconductor device processing device, including a processor and a memory, wherein the memory stores a program executable by the processor, and when the program is executed, any semiconductor device processing method as described above is implemented.

[0087] There are many implementation methods of the present invention, and all technical solutions formed by equivalent transformation or equivalent transformation fall within the protection scope of the present invention.

Claims

1. A semiconductor device processing method, characterized in that: The steps include: S1, after the thinned semiconductor device is cleaned in the cleaning device, the suction arm of the material transfer robot is controlled to move to the top of the semiconductor device; the suction surface of the suction arm is provided with a deformable suction head protruding from the suction surface, and a pressure sensor is also provided at the suction surface; S2, moving the suction arm of the material transfer robot downward to a deceleration position at a first speed; S3, slowing down the suction arm of the material transfer robot and continuing to move downward; S4, in the process of the adsorption arm moving downward, the vacuum degree of the adsorption arm and the pressure value of the pressure sensor on the adsorption arm are obtained in real time, and based on the vacuum degree of the adsorption arm and the pressure value of the pressure sensor on the adsorption arm are determined whether to move the adsorption arm upward and unload the material or to stop the adsorption arm from moving or move it upward and alarm; When the bottom of the detection point of the pressure sensor is lower than the bottom of the deformable adsorption head; In S4, it is determined whether the vacuum degree of the adsorption arm reaches the vacuum threshold before the pressure value of the pressure sensor reaches the pressure threshold according to the vacuum degree of the adsorption arm obtained in real time and the pressure value of the pressure sensor on the adsorption arm. If so, the adsorption arm is reversely lifted to unload the material; if not, the adsorption arm is stopped or moved upward and an alarm is sounded; When the bottom of the detection point of the pressure sensor is flush with the bottom of the deformable adsorption head; In S4, the sequence of when the vacuum degree of the adsorption arm reaches the vacuum threshold and when at least one of the pressure sensors generates a pressure value is determined in real time; If it is determined that before the vacuum degree of the adsorption arm reaches the vacuum threshold, at least one of the pressure sensors generates a pressure value, the adsorption arm stops moving or moves upward and an alarm is sounded; if it is determined that before at least one of the pressure sensors generates pressure, the vacuum degree of the adsorption arm reaches the vacuum threshold, the adsorption arm moves upward and then unloads the material.

2. The semiconductor device processing method according to claim 1, characterized in that: In S2, the deceleration position is a position where the distance between the top of the unthinned semiconductor device and the top surface of the unthinned semiconductor device is between 1-10 microns when the unthinned semiconductor device is placed on the turntable assembly of the cleaning device.

3. The semiconductor device processing method according to claim 1, wherein: In S3, the adsorption arm is first decelerated to a second speed which is lower than the first speed. When the adsorption surface of the adsorption arm moves down to maintain a distance of 1-3 microns from the top surface of the thinned semiconductor device, the adsorption arm is decelerated to a third speed and continues to move down. The third speed does not exceed 2 microns / second.

4. The semiconductor device processing method according to claim 1, wherein: There are three deformable adsorption heads which are evenly distributed on the adsorption arm in a circle, and there are three pressure sensors which are located beside each deformable adsorption head.

5. The semiconductor device processing method according to claim 4, characterized in that: When the bottom of the detection point of the pressure sensor is lower than the bottom of the deformable adsorption head; In S4, during the downward movement of the adsorption arm, a group of pressure values ​​of the pressure sensor are obtained in real time, and before each pressure value reaches the pressure threshold, it is determined in real time whether the maximum value of the difference between two pressure values ​​in a group of pressure values ​​exceeds the difference threshold, and if so, the adsorption arm is stopped or moved upward and an alarm is sounded; On the contrary, according to the vacuum degree of the adsorption arm and the pressure value of the pressure sensor on the adsorption arm obtained in real time, it is determined whether to move the adsorption arm upward and then unload the material or to stop the adsorption arm from moving or move upward and issue an alarm.

6. A semiconductor device processing system, characterized in that: include: A first moving control unit is used to control the suction arm of the material transfer robot to move to the top of the semiconductor device after the thinned semiconductor device is cleaned at the cleaning device; the suction surface of the suction arm is provided with a deformable suction head protruding from the suction surface, and a pressure sensor is also provided at the suction surface; A second movement control unit, used to make the suction arm of the material transfer robot move down to a deceleration position at a first speed; A third movement control unit is used to slow down the suction arm of the material transfer robot and continue to move downward; An abnormality detection control unit is used to obtain the vacuum degree of the adsorption arm and the pressure value of the pressure sensor on the adsorption arm in real time during the process of the adsorption arm moving downward, and determine whether to move the adsorption arm upward and then unload the material or to stop the adsorption arm from moving or move it upward and alarm accordingly; When the bottom of the detection point of the pressure sensor is lower than the bottom of the deformable adsorption head; The abnormality detection control unit determines whether the vacuum degree of the adsorption arm reaches the vacuum threshold before the pressure value of the pressure sensor reaches the pressure threshold based on the vacuum degree of the adsorption arm obtained in real time and the pressure value of the pressure sensor on the adsorption arm. If so, the adsorption arm is reversely lifted to unload the material; if not, the adsorption arm is stopped or moved upward and an alarm is sounded; When the bottom of the detection point of the pressure sensor is flush with the bottom of the deformable adsorption head; The abnormality detection control unit determines in real time the order in which the vacuum degree of the adsorption arm reaches the vacuum threshold and the pressure value generated by at least one of the pressure sensors; If it is determined that before the vacuum degree of the adsorption arm reaches the vacuum threshold, at least one of the pressure sensors generates a pressure value, the adsorption arm stops moving or moves upward and an alarm is sounded; if it is determined that before at least one of the pressure sensors generates pressure, the vacuum degree of the adsorption arm reaches the vacuum threshold, the adsorption arm moves upward and then unloads the material.

7. A semiconductor device processing device, comprising a processor and a memory, wherein the memory stores a program executable by the processor, characterized in that: When the program is executed, the semiconductor device processing method according to any one of claims 1 to 5 is implemented.

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