Battery discharge processing device and discharge method

Abstract

The invention provides a battery discharge processing device and a discharge method.The battery discharge processing device comprises a first loop and a second loop used for controlling the first loop to be connected or disconnected, and the first loop comprises a load resistor and a first metal oxide semiconductor field effect transistor which are connected in series; the first metal oxide semiconductor field effect transistor and the load resistor are used for being electrically connected with a to-be-discharged power supply, the first metal oxide semiconductor field effect transistor is used for connecting or disconnecting the first loop, and the second loop comprises the to-be-discharged power supply and a second metal oxide semiconductor field effect transistor electrically connected with the to-be-discharged power supply. When the voltage of the to-be-discharged power supply is smaller than the threshold voltage of the second metal oxide semiconductor field effect transistor, the second metal oxide semiconductor field effect transistor cannot be conducted, the first metal oxide semiconductor field effect transistor is controlled to be cut off, the first loop is disconnected, the risk of over-discharge of the to-be-discharged power supply is reduced, and the service life of the to-be-discharged power supply is prolonged. Therefore, the to-be-discharged power supply can be disassembled subsequently.

Description

Technical Field

[0001] The present application relates to the field of energy storage technology, and in particular to a battery discharge processing device and a discharge method. Background Art

[0002] When lithium batteries are scrapped, they often need to be discharged to release their residual energy and reduce the safety risks of waste lithium batteries during transportation or subsequent disassembly. The existing lithium battery discharge technologies mainly include salt solution immersion, needle discharge, and discharge using battery-specific charging and discharging equipment. The use of battery-specific charging and discharging equipment requires a large investment, and the batteries to be treated have been tested or used, which is risky and requires high safety requirements for the treatment site and process. Salt water immersion or puncture of the battery consumes energy through electrolysis or short circuit. There are gases or electrolytes in the process, which requires waste gas treatment equipment. At the same time, salt water immersion requires the purchase of industrial salt and the treatment of wastewater, which increases the treatment cost. In order to reduce costs, direct resistance discharge is a simple treatment method. There is usually no voltage control during the discharge process, and there is often over-discharge of waste lithium batteries, which is not conducive to the subsequent disassembly of waste lithium batteries. Summary of the invention

[0003] In view of this, the present application provides a battery discharge processing device and a discharge method, which are used to solve the problem that waste lithium batteries are over-discharged during the discharge process, which is not conducive to the subsequent disassembly of the waste lithium batteries.

[0004] In a first aspect, the present application provides a battery discharge processing device, the battery discharge processing device comprising a first circuit and a second circuit for controlling the first circuit to be turned on or off, the first circuit comprising a load resistor and a first metal oxide semiconductor field effect transistor connected in series, the first metal oxide semiconductor field effect transistor and the load resistor are used to be electrically connected to a power source to be discharged, and the first metal oxide semiconductor field effect transistor is used to connect or disconnect the first circuit; The second circuit includes the power source to be discharged and a second metal oxide semiconductor field effect transistor electrically connected to the power source to be discharged; The drain of the second metal oxide semiconductor field effect transistor is used to be electrically connected to the gate of the first metal oxide semiconductor field effect transistor, the gate of the second metal oxide semiconductor field effect transistor is used to be electrically connected to the positive electrode of the power source to be discharged, and the source of the second metal oxide semiconductor field effect transistor is grounded; The drain of the first metal oxide semiconductor field effect transistor is electrically connected to the positive electrode of the power source to be discharged, and the source of the first metal oxide semiconductor field effect transistor is electrically connected to the negative electrode of the power source to be discharged.

[0005] When the power source to be discharged is connected to the battery discharge processing device, since the positive electrode of the power source to be discharged is electrically connected to the gate of the second metal oxide semiconductor field effect transistor, that is, a voltage is applied to the gate, so that the voltage (Vgs) of the gate of the second metal oxide semiconductor field effect transistor relative to its source exceeds its threshold voltage (Vth), thereby making the drain of the second metal oxide semiconductor field effect transistor conductive with the source, that is, the second metal oxide semiconductor field effect transistor conductive. At the same time, the drain of the second metal oxide semiconductor field effect transistor is electrically connected to the gate of the first metal oxide semiconductor field effect transistor. At this time, the drain of the second metal oxide semiconductor field effect transistor can apply a voltage to the gate of the first metal oxide semiconductor field effect transistor, thereby making the drain of the first metal oxide semiconductor field effect transistor conductive with the source, that is, the first metal oxide semiconductor field effect transistor conductive, thereby making the first loop conductive, so that the power source to be discharged can be discharged through the load resistor, which is beneficial to improving the discharge efficiency of the power source to be discharged.

[0006] The threshold voltage (Vth) of the second metal oxide semiconductor field effect transistor can be the lower limit voltage of the discharge of the power supply to be discharged. As the discharge time increases, the voltage of the power supply to be discharged will gradually decrease. When the voltage applied by the power supply to be discharged to the gate of the second metal oxide semiconductor field effect transistor is less than the threshold voltage (Vth) of the second metal oxide semiconductor field effect transistor, the source and drain of the second metal oxide semiconductor field effect transistor are cut off, that is, they cannot be turned on, so that the second circuit cannot be turned on, so that the drain of the second metal oxide semiconductor field effect transistor cannot apply voltage to the gate of the first metal oxide semiconductor field effect transistor, so that the drain and source of the first metal oxide semiconductor field effect transistor are cut off, so that the first circuit cannot be turned on, thereby preventing the power supply to be discharged from continuing to discharge, thereby reducing the risk of over-discharge, thereby reducing the risk of corrosion of the negative electrode current collector of the power supply to be discharged and the risk of expansion of the power supply to be discharged, reducing the difficulty of subsequent disassembly of the power supply to be discharged, thereby reducing the difficulty of material disassembly and recycling, and facilitating the subsequent recycling of the power supply to be discharged.

[0007] In the scheme, when the voltage of the power supply to be discharged is greater than the threshold voltage (Vth) of the second metal oxide semiconductor field effect transistor, the second metal oxide semiconductor field effect transistor is turned on, and then the second metal oxide semiconductor field effect transistor can be used to control the first metal oxide semiconductor field effect transistor to be turned on; when the voltage of the power supply to be discharged is less than the threshold voltage (Vth) of the second metal oxide semiconductor field effect transistor, the second metal oxide semiconductor field effect transistor cannot be turned on, and then the second metal oxide semiconductor field effect transistor can control the first metal oxide semiconductor field effect transistor to be turned off, so that the first circuit can be automatically disconnected when the discharge voltage of the power supply to be discharged is relatively small, thereby avoiding the risk of over-discharge caused by personnel failing to remove the power supply to be discharged from the battery discharge processing device in time, that is, reducing the risk of the discharge voltage of the power supply to be discharged being less than the lower discharge limit voltage, thereby reducing the risk of corrosion of the negative electrode current collector of the power supply to be discharged and the risk of expansion of the power supply to be discharged, facilitating subsequent disassembly and improving the safety of use. Therefore, the second metal oxide semiconductor field effect transistor can control the conduction and cut-off of the first metal oxide semiconductor field effect transistor, thereby controlling the automatic conduction or automatic cut-off of the first circuit without manual operation, thereby improving the convenience of the battery discharge processing device for discharging the power supply to be discharged.

[0008] In this solution, the first metal oxide semiconductor field effect transistor and the second metal oxide semiconductor field effect transistor are both N-channel enhancement type metal oxide semiconductor field effect transistors.

[0009] In this solution, the battery discharge processing device further includes a thermal protector, which is used to cut off the first circuit when the temperature of the first circuit reaches a preset temperature, and to connect the first circuit when the temperature of the first circuit is lower than the preset temperature; The thermal protector is a positive temperature coefficient thermistor; and / or the thermal protector is attached to the surface of the load resistor.

[0010] In this solution, the battery discharge processing device further includes an indication component, which is connected in parallel with the first circuit or in parallel with the thermal protector and is used to indicate whether the discharge is completed; The indicating component is connected in parallel with the thermal protector, or the indicating component is connected in parallel with the first loop between the thermal protector and the power source to be discharged.

[0011] In this solution, the indicating component includes a light emitting diode and a first resistor connected in series with the light emitting diode, and the indicating component is used to be connected in parallel at both ends of the power supply to be discharged to form a third loop.

[0012] In this solution, one end of the indicating component is used to be electrically connected to the positive electrode of the power supply to be discharged, and the other end of the indicating component is electrically connected to the load resistor. The indicating component and the load resistor are used to be connected in series with the power supply to be discharged to form a third loop.

[0013] In this solution, the power source to be discharged is a battery cell or a battery module or a battery pack or an energy storage system.

[0014] The second aspect of the present application also provides a discharging method, wherein the discharging method adopts the battery discharging processing device described above; Electrically connecting the power source to be discharged to the battery discharge processing device; The second metal oxide semiconductor field effect transistor is turned on, so that the first loop is turned on, and the power to be discharged is discharged through the load resistor on the first loop; When the discharge voltage of the power source to be discharged is lower than the threshold voltage of the second metal oxide semiconductor field effect transistor, the first loop is disconnected; Wherein, a threshold voltage of the first metal oxide semiconductor field effect transistor is less than or equal to a threshold voltage of the second metal oxide semiconductor field effect transistor.

[0015] In this solution, the battery discharge processing device includes a thermal protector. During the process of the power source to be discharged discharging through the load resistor on the first circuit, when the temperature of the first circuit is greater than a preset temperature, the thermal protector is disconnected to break the first circuit. When the temperature of the first loop is lower than a preset temperature and when the discharge voltage of the power source to be discharged is higher than the threshold voltage of the second metal oxide semiconductor field effect transistor, the thermal protector is closed to conduct the first loop.

[0016] In this solution, the battery discharge processing device also includes an indication component. When the power source to be discharged starts to discharge, the indication component lights up, and when the power source to be discharged completes discharging, the indication component goes out.

[0017] It should be understood that the foregoing general description and the following detailed description are exemplary only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0019] Figure 1 This is a schematic structural diagram of a battery discharge processing device provided in the present application in a specific embodiment; Figure 2 This is a schematic structural diagram of a battery discharge processing device provided in the present application in another specific embodiment; Figure 3 This is a schematic structural diagram of a battery discharge processing device provided in the present application in another specific embodiment; Figure 4 This is a schematic structural diagram of another specific embodiment of the battery discharge processing device provided in the present application.

[0020] Description of reference numerals: 1-Battery discharge processing device; 11-a first metal oxide semiconductor field effect transistor; 12-a second metal oxide semiconductor field effect transistor; 13- load resistance; 14- indication component; 141-light emitting diode; 142- a first resistor; 15- Thermal protector; 16-Power supply to be discharged. DETAILED DESCRIPTION

[0021] In order to better understand the technical solution of the present application, the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0022] It should be clear that the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0023] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0024] It should be understood that the term "and / or" used in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0025] When lithium batteries are scrapped, they often need to be discharged to release their residual energy, thereby reducing the risk of short circuits, arcing, fires, explosions and other safety hazards caused by waste lithium batteries during transportation or subsequent disassembly. The current existing lithium battery discharge technology mainly includes salt solution immersion, needle discharge and discharge using battery charging and discharging equipment. However, during the discharge process of the above-mentioned discharge technology, there is often a situation where the waste lithium batteries are over-discharged, and usually the negative electrode collector of the waste lithium battery is copper foil, which easily causes the risk of corrosion of the negative electrode collector of the waste lithium battery, thereby increasing the difficulty of subsequent disassembly of the waste lithium battery. At the same time, when the waste lithium battery is over-discharged, it will also cause the waste lithium battery to swell, causing the pressure inside the waste lithium battery to increase, further increasing the difficulty of subsequent disassembly.

[0026] In order to solve the above technical problems, the present application embodiment provides a battery discharge processing device 1, such as Figure 1 and Figure 2 As shown, the battery discharge processing device 1 includes a first circuit and a second circuit for controlling the first circuit to be turned on or off. The first circuit includes a load resistor 13 and a first metal oxide semiconductor field effect transistor 11 connected in series. The first metal oxide semiconductor field effect transistor 11 and the load resistor 13 are used to be electrically connected to a power source 16 to be discharged. The first metal oxide semiconductor field effect transistor 11 is used to connect or disconnect the first circuit.

[0027] The second circuit includes a power source to be discharged 16 and a second metal oxide semiconductor field effect transistor 12 electrically connected to the power source to be discharged 16. The drain of the second metal oxide semiconductor field effect transistor 12 is used to be electrically connected to the gate of the first metal oxide semiconductor field effect transistor 11, the gate of the second metal oxide semiconductor field effect transistor 12 is used to be electrically connected to the positive electrode of the power source to be discharged 16, and the source of the second metal oxide semiconductor field effect transistor 12 is grounded. The drain of the first metal oxide semiconductor field effect transistor 11 is electrically connected to the positive electrode of the power source to be discharged 16, and the source of the first metal oxide semiconductor field effect transistor 11 is used to be electrically connected to the negative electrode of the power source to be discharged 16.

[0028] Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET, or MOS tube). MOS tube is a semiconductor device that uses the electric field effect of the control input loop to control the output loop current. Field effect tubes are voltage-controlled semiconductor devices with the advantages of high input resistance, low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown, and a wide safe working area. Among them, metal oxide semiconductor field effect transistors can be divided into N-channel enhancement MOS tubes, N-channel depletion MOS tubes, P-channel enhancement MOS tubes, and P-channel depletion MOS tubes according to the channel and material.

[0029] In the embodiments of the present application, Figure 1 and Figure 2 As shown, the first MOSFET 11 and the second MOSFET 12 are both N-channel enhancement type MOSFETs, so that the first MOSFET 11 can cut off or conduct the first loop, and the second MOSFET 12 can cut off or conduct the second loop.

[0030] Specifically, an N-channel enhancement metal oxide semiconductor field effect transistor includes a substrate of a P-type semiconductor material. On a low-doped P-type substrate, two high-doped N-type semiconductors are made by diffusion technology, and lead pins are respectively used as the source (Source-S) and the drain (Drain-D). The P-type substrate is connected to the source inside the N-channel enhancement metal oxide semiconductor field effect transistor. An insulating layer is provided between the P-type substrate and the two N-type semiconductors, and a gate (Gate-G) is formed by polysilicon lead pins. Because the gate has an insulating oxide, the input impedance of the gate is high, so the input of the gate hardly takes current and can be used as an electronic switch, and the gate is not connected to the source or drain, so that the gate of the N-channel enhancement metal oxide semiconductor field effect transistor is isolated from the source and the drain, respectively.

[0031] N-type semiconductor is also called electron-type semiconductor, that is, N-type semiconductor is an impurity semiconductor with a free electron concentration much greater than the hole concentration. P-type semiconductor is also called hole-type semiconductor, which is a semiconductor that mainly conducts electricity with positively charged holes. In P-type semiconductor, holes are majority carriers and free electrons are minority carriers, and the main conductor is holes. The more impurities are doped, the higher the concentration of majority carriers. When voltage is applied to the gate of an N-channel enhancement metal oxide semiconductor field effect transistor, an electric field will be generated on the insulating layer, which repels majority carrier holes in the P substrate and attracts minority carrier electrons, attracting electrons to the edge of the insulating layer. Most of the N-type semiconductor is electrons, so that electrons gather and form an inversion layer, that is, the part of the P-type semiconductor near the insulating layer will "become N-type", because the electrons will form a current under the action of the electric field, so that the source and drain are conductive. That is, when the gate voltage (Vgs) relative to the source exceeds the threshold voltage (Vth) and the voltage difference between the drain and the source (Vds) is positive, the metal oxide semiconductor field effect transistor will enter the on state. At this time, the drain and the source are equivalent to a closed switch, and the current can flow from the drain to the source.

[0032] When the power source 16 to be discharged is connected to the battery discharge processing device 1, since the positive electrode of the power source 16 to be discharged is electrically connected to the gate of the second metal oxide semiconductor field effect transistor 12, that is, a voltage is applied to the gate, so that the voltage (Vgs) of the gate of the second metal oxide semiconductor field effect transistor 12 relative to its source exceeds its threshold voltage (Vth), thereby making the drain of the second metal oxide semiconductor field effect transistor 12 conductive with the source, that is, the second metal oxide semiconductor field effect transistor 12 is turned on. At the same time, the drain of the second metal oxide semiconductor field effect transistor 12 is electrically connected to the gate of the first metal oxide semiconductor field effect transistor 11. At this time, the drain of the second metal oxide semiconductor field effect transistor 12 can apply a voltage to the gate of the first metal oxide semiconductor field effect transistor 11, thereby making the drain of the first metal oxide semiconductor field effect transistor 11 conductive with the source, that is, the first metal oxide semiconductor field effect transistor 11 is turned on, thereby making the first loop conductive, so that the power source 16 to be discharged can be discharged through the load resistor 13, which is beneficial to improving the discharge efficiency of the power source 16 to be discharged.

[0033] The threshold voltage (Vth) of the second metal oxide semiconductor field effect transistor 12 can be the lower limit voltage of the discharge of the power supply 16 to be discharged. As the discharge time increases, the voltage of the power supply 16 to be discharged will gradually decrease. When the voltage applied by the power supply 16 to be discharged to the gate of the second metal oxide semiconductor field effect transistor 12 is less than the threshold voltage (Vth) of the second metal oxide semiconductor field effect transistor 12, the source and drain of the second metal oxide semiconductor field effect transistor 12 are cut off, that is, they cannot be turned on, so that the second circuit cannot be turned on, so that the drain of the second metal oxide semiconductor field effect transistor 12 cannot apply voltage to the gate of the first metal oxide semiconductor field effect transistor 11, so that the drain and source of the first metal oxide semiconductor field effect transistor 11 are cut off, so that the first circuit cannot be turned on, thereby preventing the power supply 16 to be discharged from continuing to discharge, thereby reducing the risk of over-discharge, thereby reducing the risk of corrosion of the negative electrode current collector of the power supply 16 to be discharged and the risk of expansion of the power supply 16 to be discharged, reducing the difficulty of subsequent disassembly of the power supply 16 to be discharged, thereby reducing the difficulty of material disassembly and recycling, and facilitating the subsequent recycling of the power supply 16 to be discharged.

[0034] Therefore, when the voltage of the power source 16 to be discharged is greater than the threshold voltage (Vth) of the second metal oxide semiconductor field effect transistor 12, the second metal oxide semiconductor field effect transistor 12 is turned on, and then the second metal oxide semiconductor field effect transistor 12 can be used to control the first metal oxide semiconductor field effect transistor 11 to be turned on; when the voltage of the power source 16 to be discharged is less than the threshold voltage (Vth) of the second metal oxide semiconductor field effect transistor 12, the second metal oxide semiconductor field effect transistor 12 cannot be turned on, and then the second metal oxide semiconductor field effect transistor 12 can control the first metal oxide semiconductor field effect transistor 11 to be turned off, so that the first circuit can be automatically disconnected when the discharge voltage of the power source 16 to be discharged is relatively small, thereby avoiding the risk of over-discharge caused by the failure of personnel to remove the power source 16 to be discharged from the battery discharge processing device 1 in time, that is, reducing the risk of the discharge voltage of the power source 16 to be discharged being less than the lower discharge limit voltage, thereby reducing the risk of corrosion of the negative electrode current collector of the power source 16 to be discharged and the risk of expansion of the power source 16 to be discharged, facilitating subsequent disassembly and improving the safety of use. Therefore, the second metal oxide semiconductor field effect transistor 12 can control the conduction and cut-off of the first metal oxide semiconductor field effect transistor 11, thereby controlling the automatic conduction or automatic cut-off of the first circuit without manual operation, thereby improving the convenience of the battery discharge processing device 1 for discharging the power source 16 to be discharged.

[0035] In a possible implementation, Figure 1-Figure 4As shown, the battery discharge processing device 1 further includes a thermal protector 15, which is used to cut off the first circuit when the temperature of the first circuit reaches a preset temperature, and to connect the first circuit when the temperature of the first circuit is lower than the preset temperature. At the same time, when the circuit current in the battery discharge processing device 1 is too large, the thermal protector 15 can also cut off the first circuit.

[0036] In this embodiment, as the discharge time increases, when the current of the first circuit is too large, the temperature of the first circuit often exceeds the preset temperature. At this time, the thermal protector 15 is disconnected, so that the first circuit is disconnected, that is, the thermal protector 15 can perform overcurrent protection on the first metal oxide semiconductor field effect transistor 11, reduce the risk of damage to the first metal oxide semiconductor field effect transistor 11 due to excessive current, and avoid the risk of excessive temperature of the load resistor 13, thereby reducing the problem of potential safety hazards during discharge and improving discharge reliability and safety.

[0037] Specifically, if Figure 1 and Figure 2 As shown, the thermal protector 15 is located between the power supply 16 to be discharged and the first metal oxide semiconductor field effect transistor 11, and between the power supply 16 to be discharged and the second metal oxide semiconductor field effect transistor 12, that is, the thermal protector 15 is connected in series to the first circuit and the second circuit. In this embodiment, when the thermal protector 15 is used to reach the preset temperature of the first circuit and / or the second circuit, the thermal protector 15 can be automatically disconnected to directly cut off the first circuit and the second circuit, so that the power supply 16 to be discharged cannot be discharged through the first metal oxide semiconductor field effect transistor 11 and the load resistor 13, thereby improving the safety of the battery discharge processing device 1. When the thermal protector 15 is used to restore the temperature of the first circuit to less than the preset temperature, the thermal protector 15 can be automatically closed to connect the first circuit and the second circuit, so that the power supply 16 to be discharged can continue to discharge through the first circuit.

[0038] like Figure 3 and Figure 4As shown, the thermal protector 15 is located between the power source 16 to be discharged and the second metal oxide semiconductor field effect transistor 12, and the thermal protector 15 is only connected in series to the second circuit. In this embodiment, when the thermal protector 15 is used to reach the preset temperature of the first circuit and / or the second circuit, the thermal protector 15 can be automatically disconnected to directly cut off the second circuit, and then the second metal oxide semiconductor field effect transistor 12 is turned off to control the first metal oxide semiconductor field effect transistor 11 to be turned off, and then the first circuit is indirectly disconnected, so that the power source 16 to be discharged cannot be discharged through the first metal oxide semiconductor field effect transistor 11 and the load resistor 13, thereby improving the safety of the battery discharge processing device 1. When the thermal protector 15 is used to restore the temperature of the first circuit to less than the preset temperature, the thermal protector 15 can be automatically closed to connect the second circuit, and then the second metal oxide semiconductor field effect transistor 12 controls the first metal oxide semiconductor field effect transistor 11 to be turned on, so that the power source 16 to be discharged can continue to discharge through the first circuit.

[0039] Therefore, by providing the thermal protector 15 in the battery discharge processing device 1, the battery discharge processing device 1 can have the capabilities of overcurrent protection, overtemperature protection and temperature regulation, thereby reducing the risk of damage to electrical components in the device due to overheating, thereby greatly improving the safety and convenience of using the battery discharge processing device 1.

[0040] In addition, when the voltage of the power supply 16 to be discharged does not match the load resistor 13, it is very easy to cause excessive current and excessive temperature of the load resistor 13. By providing a thermal protector 15 in the battery discharge processing device 1, the first circuit and the second circuit can be cut off in time, reducing the risk of safety hazards such as scalding operators or causing fires.

[0041] In a possible implementation, Figure 1-Figure 4 As shown, the thermal protector 15 is a positive temperature coefficient thermistor; and / or, the thermal protector 15 is attached to the surface of the load resistor 13.

[0042] In this embodiment, the thermal protector 15 may be a positive temperature coefficient thermistor (PTC), whose resistance increases when the temperature rises, and can be used to limit the current. At the same time, the positive temperature coefficient thermistor (PTC) can specify the hot start temperature (i.e. the preset temperature mentioned above, at this time, the thermal protector 15 is disconnected) and the recovery temperature at low temperature (at this time, the thermal protector 15 is closed) according to actual needs. In addition, the thermal protector 15 can be attached to the surface of the load resistor 13 to ensure that the thermal protector 15 fits tightly to the surface of the load resistor 13 so as to accurately measure the temperature. When the temperature of the load resistor 13 is greater than the preset temperature (i.e. the hot start temperature), the thermal protector 15 can respond quickly and cut off the first circuit. In one possible implementation, Figure 1 and Figure 2 As shown, the battery discharge processing device 1 further includes an indication component 14, which is connected in parallel with the first circuit and is used to indicate whether the discharge is completed.

[0043] When the power source 16 to be discharged starts to discharge, the indicator component 14 can remind the personnel that the power source 16 to be discharged is in a discharging state, so as to remind the battery discharge processing device 1 to work normally. When the power source 16 to be discharged is completely discharged, the indicator component 14 can remind the personnel that the power source 16 to be discharged is in a completely discharged state, so as to remind the personnel to remove the power source 16 to be discharged in time and replace it with another power source 16 to be discharged in time, so as to improve the discharge efficiency and subsequent processing efficiency.

[0044] In a possible implementation, Figure 1 As shown, the indicating component 14 includes a light emitting diode 141 and a first resistor 142 connected in series with the light emitting diode 141. The indicating component 14 is used to be connected in parallel to both ends of the power source 16 to be discharged to form a third loop. Figure 1 and Figure 3 In the illustrated embodiment, the first resistor 142 is electrically connected to the positive electrode of the power source 16 to be discharged, and the light-emitting diode 141 is electrically connected to the negative electrode of the power source 16 to be discharged, that is, the first resistor 142, the light-emitting diode 141 and the power source 16 to be discharged form a third loop.

[0045] In this implementation, when the power supply 16 to be discharged is electrically connected to the battery discharge processing device 1, the light-emitting diode 141 lights up; when the power supply 16 to be discharged completes discharging, the light-emitting diode 141 goes out to remind personnel that the discharge is complete so that the personnel can replace the power supply 16 to be discharged in time.

[0046] In addition, the light emitting diode 141 is also connected in series with a first resistor 142 with a relatively large resistance. Since the current allowed to pass through the light emitting diode 141 is usually in the milliampere level, the first resistor 142 in series can limit the current of the third circuit, thereby reducing the risk of overheating or even burning of the light emitting diode 141, which is beneficial to improving the reliability of the light emitting diode 141 in the battery discharge processing device 1, and at the same time improving the safety of the battery discharge processing device 1.

[0047] In a possible implementation, Figure 2 As shown, one end of the indicating component 14 is used to be electrically connected to the positive electrode of the power source 16 to be discharged, and the other end of the indicating component 14 is electrically connected to the load resistor 13. The indicating component 14 and the load resistor 13 are used to be connected in series with the power source 16 to be discharged to form a third loop. Figure 2 and Figure 4In the illustrated embodiment, one end of the indicating component 14 is electrically connected to the positive electrode of the power source 16 to be discharged, and the other end is connected between the load resistor 13 and the first metal oxide semiconductor field effect transistor 11, wherein the first resistor 142 is electrically connected to the positive electrode of the power source 16 to be discharged, the first resistor 142, the light emitting diode 141 and the load resistor 13 are connected in series in sequence, and the load resistor 13 is electrically connected to the negative electrode of the power source 16 to be discharged, that is, the first resistor 142, the light emitting diode 141, the load resistor 13 and the power source 16 to be discharged form a third loop.

[0048] In a possible implementation, Figure 1-Figure 4 As shown, in a possible implementation, as Figure 1-Figure 4 As shown, the indicating component 14 is connected in parallel with the thermal protector 15, or the indicating component 14 is connected in parallel with the first circuit between the thermal protector 15 and the power source to be discharged 16. Specifically, Figure 1 As shown, the thermal protector 15 is connected in series with the first circuit and the second circuit at the same time, and the indicator assembly 14 is connected in parallel with the first circuit where the thermal protector 15 is located; Figure 2 As shown, the thermal protector 15 is connected in series to the first circuit and the second circuit, and the indicating component 14 is connected in parallel to the first circuit between the thermal protector 15 and the power source to be discharged 16; Figure 3 and Figure 4 As shown, the indicating component 14 is connected in parallel with the first circuit between the thermal protector 15 and the power source to be discharged 16. Figure 1-Figure 4 As shown, the indicating component 14 is used to be connected between the positive pole of the power source to be discharged 16 and the thermal protector 15, so that the thermal protector 15 cannot be connected in series to the third circuit, so that the thermal protector 15 cannot be connected in series to the first circuit, the second circuit and the third circuit at the same time, thereby avoiding the risk of disconnecting the third circuit when the thermal protector 15 is disconnected, reducing the risk of the light-emitting diode 141 being extinguished due to the excessive temperature of the battery discharge processing device 1, thereby reducing the risk that the indicating component 14 cannot prompt the power source to be discharged 16 to complete the discharge.

[0049] It should be noted that after the thermal protector 15 is disconnected, the first circuit and the second circuit are disconnected, and the third circuit is still connected. Since the current allowed to pass through the third circuit is at the milliampere level, there is still no risk of over-discharging of the power source to be discharged 16. In summary, the battery discharge processing device 1 provided in the present application has a simple structure and low cost, and the discharge process is environmentally friendly and has low safety hazards.

[0050] In a possible implementation, Figure 1-Figure 4 As shown, the power source to be discharged 16 is a battery cell or a battery module or a battery pack or an energy storage system, that is, the battery discharge processing device 1 can discharge the battery cell or the battery module or the battery pack or the energy storage system to meet various discharge requirements.

[0051] When the power source 16 to be discharged is a battery cell, the overcurrent capacity of the thermal protector 15 is 17A, and the preset temperature (i.e., the hot start temperature) is 80°C; the load resistor 13 is a ripple resistor with a rated power of 3KW and an internal resistance of 0.2Ω; the threshold voltage of the first metal oxide semiconductor field effect transistor 11 is 1.2V, and the overcurrent capacity is 18A to 27.5A; the threshold voltage of the second metal oxide semiconductor field effect transistor 12 is 1.5V, the light emitting diode 141 is a yellow LED, and the resistance of the first resistor 142 is 220Ω. The thermal protector 15 is attached to the surface of the load resistor 13.

[0052] When the power source 16 to be discharged is a battery pack or a system, the overcurrent capacity of the thermal protector 15 is 17A, and the preset temperature (i.e., the hot start temperature) is 80°C; the load resistor 13 is a ripple resistor with a rated power of 5KW and an internal resistance of 20Ω; the first metal oxide semiconductor field effect transistor 11 and the second metal oxide semiconductor field effect transistor 12 have the same specifications, both of which have a threshold voltage of 180V and an overcurrent capacity of 18A to 27.5A; the light emitting diode 141 is a blue LED, and the resistance of the first resistor 142 is 25kΩ. The thermal protector 15 is attached to the surface of the load resistor 13.

[0053] The embodiment of the present application also provides a discharging method, which adopts the battery discharging processing device 1 in any of the above embodiments; In a specific embodiment, the discharge method includes: S1: electrically connecting the power source to be discharged 16 to the battery discharge processing device 1 .

[0054] S2: the power source to be discharged 16 controls the second MOSFET 12 to be turned on, and then the second MOSFET 12 controls the first MOSFET 11 to be turned on, so that the first loop is turned on, and the power source to be discharged 16 is discharged through the load resistor 13 on the first loop.

[0055] S3: When the discharge voltage of the to-be-discharged power source 16 is lower than the threshold voltage of the second MOSFET 12, the second MOSFET 12 is turned off and controls the first MOSFET 11 to be turned off, so that the first loop is disconnected.

[0056] In this embodiment, through the above-mentioned step S3, when the second metal oxide semiconductor field effect transistor 12 is turned off, the first metal oxide semiconductor field effect transistor 11 is controlled to be turned off, so that the first circuit cannot be turned on, thereby preventing the power supply 16 to be discharged from continuing to discharge through the first circuit, thereby preventing the risk of over-discharge, thereby reducing the difficulty of subsequent disassembly of the power supply 16 to be discharged, and facilitating the subsequent recycling of the power supply 16 to be discharged.

[0057] Among them, the threshold voltage of the first metal oxide semiconductor field effect transistor 11 should be less than or equal to the threshold voltage of the second metal oxide semiconductor field effect transistor 12, because the second metal oxide semiconductor field effect transistor 12 is used as a signal control source to control the conduction and cutoff of the first metal oxide semiconductor field effect transistor 11. If the threshold voltage of the first metal oxide semiconductor field effect transistor 11 is greater than the threshold voltage of the second metal oxide semiconductor field effect transistor 12, the voltage applied by the drain of the second metal oxide semiconductor field effect transistor 12 to the gate of the first metal oxide semiconductor field effect transistor 11 is smaller, which causes the first metal oxide semiconductor field effect transistor 11 to be unable to be turned on. Therefore, the threshold voltage of the first metal oxide semiconductor field effect transistor 11 is less than or equal to the threshold voltage of the second metal oxide semiconductor field effect transistor 12, which can improve the feasibility and reliability of the conduction of the first metal oxide semiconductor field effect transistor 11, thereby improving the feasibility and reliability of the conduction of the first loop.

[0058] In a possible implementation, Figure 1-Figure 4 As shown, the battery discharge processing device 1 further includes a thermal protector 15 .

[0059] In a specific embodiment, the above step S2 may further include steps S21 and S22: S21: During the process of the to-be-discharged power source 16 discharging through the load resistor 13 on the first circuit, if the temperature of the first circuit is greater than a preset temperature, the thermal protector 15 is disconnected to break the first circuit.

[0060] S22: When the temperature of the first circuit is restored to be lower than the preset temperature and when the discharge voltage of the power source to be discharged 16 is higher than the threshold voltage of the second MOSFET 12, the thermal protector 15 is closed to conduct the first circuit.

[0061] In this embodiment, through the above step S21, when the temperature of the first circuit is too high, the thermal protector 15 is automatically disconnected, so that both the first circuit and the second circuit can be disconnected, that is, no current passes, reducing the risk of damage to the second metal oxide semiconductor field effect transistor 12 and the first metal oxide semiconductor field effect transistor 11, and improving the reliability and safety of the battery discharge processing device 1. Through the above step S22, when the temperature of the first circuit is restored to below the preset temperature, the thermal protector 15 is automatically closed, so that both the first circuit and the second circuit can be connected, that is, current passes, so that the power source to be discharged 16 continues to discharge through the first circuit, improving the discharge efficiency.

[0062] In a possible implementation, Figure 1-Figure 4 As shown, the battery discharge processing device 1 further includes an indication component 14 .

[0063] In a specific embodiment, the above step S1 may further include step S11, and step S3 may further include step S4: S11: When the power source 16 to be discharged starts to discharge, the light emitting diode 141 of the indicating component 14 lights up.

[0064] S4: When the power source 16 to be discharged completes the discharge, the light emitting diode 141 of the indicating component 14 goes out.

[0065] In this embodiment, after the power source 16 to be discharged is electrically connected to the battery discharge processing device 1, that is, when the power source 16 to be discharged starts to discharge, the light emitting diode 141 of the indicator component 14 lights up, that is, step S11 is executed after step S1 to remind the personnel that the power source 16 to be discharged starts to discharge.

[0066] After steps S2 and S3, step S4 is performed, at which time the light emitting diode 141 of the indicator assembly 14 goes out to remind the personnel that the discharge of the power supply 16 to be discharged is complete, so that the personnel can replace the power supply 16 to be discharged in time to improve the discharge efficiency.

[0067] In summary, if Figure 1-Figure 4 The discharge method in the illustrated embodiment is: perform step S1, and at the same time the thermal protector 15 is closed and perform steps S11 and S2, that is, at this time the first circuit, the second circuit and the third circuit are all turned on. Then, if the temperature of the battery discharge processing device 1 is high, perform steps S21 and S22. If the temperature of the battery discharge processing device 1 does not exceed the preset temperature, do not perform steps S21 and S22. Then perform step S3, and finally perform step S4 to complete the discharge.

[0068] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A battery discharge processing device, characterized in that: The battery discharge processing device (1) comprises a first circuit and a second circuit for controlling the first circuit to be turned on or off, the first circuit comprising a load resistor (13) and a first metal oxide semiconductor field effect transistor (11) connected in series, the first metal oxide semiconductor field effect transistor (11) and the load resistor (13) being used to be electrically connected to a power source (16) to be discharged, and the first metal oxide semiconductor field effect transistor (11) being used to connect or disconnect the first circuit; The second circuit comprises the power source to be discharged (16) and a second metal oxide semiconductor field effect transistor (12) electrically connected to the power source to be discharged (16); The drain of the second metal oxide semiconductor field effect transistor (12) is used to be electrically connected to the gate of the first metal oxide semiconductor field effect transistor (11), the gate of the second metal oxide semiconductor field effect transistor (12) is used to be electrically connected to the positive electrode of the power source to be discharged (16), and the source of the second metal oxide semiconductor field effect transistor (12) is grounded; The drain of the first metal oxide semiconductor field effect transistor (11) is electrically connected to the positive electrode of the power source (16) to be discharged, and the source of the first metal oxide semiconductor field effect transistor (11) is electrically connected to the negative electrode of the power source (16) to be discharged.

2. The battery discharge processing device according to claim 1, characterized in that: The first metal oxide semiconductor field effect transistor (11) and the second metal oxide semiconductor field effect transistor (12) are both N-channel enhancement type metal oxide semiconductor field effect transistors.

3. The battery discharge processing device according to claim 1, characterized in that: The battery discharge processing device (1) further comprises a thermal protector (15), wherein the thermal protector (15) is used to cut off the first circuit when the temperature of the first circuit reaches a preset temperature, and to connect the first circuit when the temperature of the first circuit is lower than the preset temperature; The thermal protector (15) is a positive temperature coefficient thermistor; and / or, The thermal protector (15) is attached to the surface of the load resistor (13).

4. The battery discharge processing device according to claim 3, characterized in that: The battery discharge processing device (1) further comprises an indication component (14), the indication component (14) being connected in parallel with the first circuit and being used to indicate whether the discharge is completed; The indicating component (14) is connected in parallel with the thermal protector (15), or the indicating component (14) is connected in parallel with the first loop between the thermal protector (15) and the power source to be discharged (16).

5. The battery discharge processing device according to claim 4, characterized in that: The indicating component (14) comprises a light emitting diode (141) and a first resistor (142) connected in series with the light emitting diode (141); the indicating component (14) is used to be connected in parallel to two ends of the power source (16) to be discharged to form a third loop.

6. The battery discharge processing device according to claim 4, characterized in that: One end of the indicating component (14) is used to be electrically connected to the positive electrode of the power source to be discharged (16), and the other end of the indicating component (14) is electrically connected to the load resistor (13). The indicating component (14) and the load resistor (13) are used to be connected in series with the power source to be discharged (16) to form a third loop.

7. The battery discharge processing device according to any one of claims 1 to 6, characterized in that: The power source to be discharged (16) is a battery cell or a battery module or a battery pack or an energy storage system.

8. A discharge method, characterized in that: The discharging method adopts the battery discharging processing device (1) described in any one of claims 1 to 7; Electrically connecting the power source to be discharged (16) to the battery discharge processing device (1); The second metal oxide semiconductor field effect transistor (12) is turned on, so that the first loop is turned on, and the power source to be discharged (16) is discharged through the load resistor (13) on the first loop; When the discharge voltage of the power source to be discharged (16) is lower than the threshold voltage of the second metal oxide semiconductor field effect transistor (12), the first loop is disconnected; Wherein, the threshold voltage of the first metal oxide semiconductor field effect transistor (11) is less than or equal to the threshold voltage of the second metal oxide semiconductor field effect transistor (12).

9. The discharge method according to claim 8, characterized in that: The battery discharge processing device (1) comprises a thermal protector (15), and during the process of the to-be-discharged power source (16) discharging through the load resistor (13) on the first circuit, when the temperature of the first circuit is greater than a preset temperature, the thermal protector (15) is disconnected to open the first circuit; When the temperature of the first circuit is lower than a preset temperature, and when the discharge voltage of the power source to be discharged (16) is higher than the threshold voltage of the second metal oxide semiconductor field effect transistor (12), the thermal protector (15) is closed to make the first circuit conductive.

10. The discharge method according to claim 8, characterized in that: The battery discharge processing device (1) further comprises an indication component (14), which lights up when the power source to be discharged (16) starts to discharge, and turns off when the power source to be discharged (16) completes discharging.

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