Heterogeneous low noise amplifier based on ultra-low noise broadband matching network
By using microstrip ultra-low noise input matching network and three-stage transistor cascade circuit in broadband low-noise amplifiers, combined with InP and SiGe transistors, the noise performance and cost problems in the prior art are solved, and the low temperature is achieved Noise temperature and high sensitivity effects.
Patent Information
- Application Number
- CN202411324675.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-23
- Publication Date
- 2024-12-31
AI Technical Summary
Existing broadband low-noise amplifiers have large losses when implementing matching networks, resulting in deterioration of noise performance and making it difficult to meet the improvement of high sensitivity and low noise requirements in modern communication systems and radio astronomy fields.
Using a heterogeneous low-noise amplifier design based on ultra-low noise broadband matching network, the microstrip ultra-low noise input matching network and the three-stage transistor cascade amplifier circuit is used, combined with InP and SiGe transistors, dual power supply and three-stage common source structure are adopted. , reduce passive component losses through high Q value inductors and capacitors to achieve broadband noise matching.
Achieve lower noise temperature (10K) at room temperature, reduce the refrigeration cost of the receiver, improve the receiver sensitivity and detection sensitivity, and reduce circuit costs, achieving better noise performance and miniaturization.
Smart Images
Figure CN119232095A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the field of radio frequency technology, and in particular relates to a heterogeneous low noise amplifier based on an ultra-low noise broadband matching network. Background Art
[0002] As a key component of RF receivers, low noise amplifiers are of great significance for improving receiver sensitivity and increasing signal reception distance, especially for improving the quality of wireless communication signal reception, reducing bit error rate, enhancing signal coverage and reliability, improving target detection and tracking accuracy for radar systems, improving system performance, improving the sensitivity of radio astronomy and radio telescopes, enhancing the ability to receive weak signals from the universe, supporting astronomical research, and revealing the mysteries of the universe. The performance of low noise amplifiers largely determines the overall performance of the receiver system.
[0003] Wideband receiving technology is of great significance in improving data transmission rate, enhancing signal sensitivity, supporting multi-band communication, reducing interference, and improving spectrum efficiency and flexibility. Therefore, wideband receivers have become a key form in modern communication systems, sensor networks, radar systems, and radio astronomy. Therefore, improving the performance of wideband low-noise amplifiers is of great significance.
[0004] Currently, common broadband low-noise amplifiers use discrete capacitors and inductors as input, inter-stage and output matching, which makes the matching network more complicated in order to achieve broadband matching effect, thus introducing larger losses, which will deteriorate the noise performance of the low-noise amplifier. Therefore, proposing a new low-loss broadband matching method is of great significance to further improve the noise performance of the low-noise amplifier. Summary of the invention
[0005] In order to solve the problems existing in the prior art, the present invention provides a heterogeneous low noise amplifier design based on an ultra-low noise broadband matching network. Based on the ultra-low noise broadband matching network, the noise coefficient performance of the low noise amplifier at room temperature is further improved. At room temperature, in the 1-2GHz frequency band, the equivalent noise temperature can reach an excellent effect of 10K, which is of great significance for improving the sensitivity of the receiver and greatly reducing the low temperature refrigeration cost of the receiver.
[0006] In order to achieve the above object, the technical solution adopted by the present invention is as follows:
[0007] A heterogeneous low noise amplifier based on an ultra-low noise broadband matching network comprises an input end, an output end, a broadband microstrip ultra-low noise input matching network, a three-stage transistor cascade amplifier circuit and a broadband microstrip output matching network, wherein the microstrip ultra-low noise input matching network and the input of the discrete capacitor and inductor serve as the input end of the radio frequency signal, and the circuit performs three-stage transistor amplification on the received radio frequency signal and outputs it through the output end; the heterogeneous low noise amplifier of the broadband ultra-low noise input matching network comprises a DC bias circuit, two different transistors, a broadband low noise matching network and a broadband output matching network, wherein a dual power supply mode with relatively small input noise is adopted so that the DC bias circuit is respectively connected to the gate (G) and drain (D) of the transistor to provide a suitable transistor operating voltage, and a choke inductor is adopted to block the radio frequency signal from flowing into the power supply; the microstrip input matching circuit realizes broadband characteristics with extremely low loss.
[0008] Furthermore, the three-stage transistor cascade amplifier circuit includes: the first stage uses InP transistors with excellent performance to reduce circuit input noise, and the second and third stages use SiGe transistors with relatively excellent performance to reduce circuit cost while ensuring that the circuit noise does not deteriorate much.
[0009] Furthermore, the circuit needs four bias voltages for power supply, and the gate of the first InP high electron mobility transistor is connected to the power supply 1 .
[0010] Furthermore, the gates of the second heterojunction bipolar transistor and the third heterojunction bipolar transistor are commonly connected to the power source 2 .
[0011] Furthermore, the drain of the first InP high electron mobility transistor is connected to the power source 3 .
[0012] Furthermore, drains of the second heterojunction bipolar transistor and the third heterojunction bipolar transistor are commonly connected to the power source 4 .
[0013] Furthermore, the amplifier adopts a three-stage common-source structure.
[0014] Furthermore, the first stage of the amplifier adopts a microstrip stepped impedance structure to assist in minimum noise broadband matching.
[0015] Furthermore, high-Q inductors and capacitors are used to minimize the loss introduced by passive components.
[0016] Furthermore, the specific structure of the amplifier is as follows: the input end is connected to a low-noise input matching network, the low-noise input matching network is connected to the gate of Transistor1 InP transistor, the drain of Transistor1 InP transistor is connected to the gate of Transistor2 SiGe transistor through a common-source structure interstage matching network, the drain of Transistor2 SiGe transistor is connected to a common-source output interstage matching network, the common-source output matching network is connected to the gate of Transistor3 SiGe transistor, and the drain of Transistor3 SiGe transistor is connected to a broadband output matching network.
[0017] Furthermore, the specific circuit principle structure is as follows: the input terminal RFin is connected to the ultra-low noise input matching step impedance microstrip circuit, capacitor C1, capacitor C2, and inductor L1, wherein inductor L1 is grounded and connected to the gate of Transistor 1. The source of the transistor is grounded through inductor TLs, the drain of Transistor 1 is connected to the gate of Transistor 2 through capacitor C3, capacitor C4, and inductor L2; the gate of Transistor 2 is connected to the gate of Transistor 3 through resistor R1 and capacitor C5 and capacitor C6, and inductor L3; the drain of Transistor 3 is connected to the output terminal RFout through capacitor C7, inductor L4, resistor R2, and output step impedance broadband matching network.
[0018] Compared with the prior art, the present invention has at least the following beneficial effects:
[0019] The heterogeneous low noise amplifier design based on the ultra-low noise broadband matching network in the present invention can achieve wider noise matching compared to the traditional low noise amplifier design, and has smaller input loss than the traditional discrete device matching, and can achieve better broadband noise performance. At the same time, due to the use of heterogeneous transistors, the cost of the circuit can be relatively reduced while ensuring the noise performance, which is of great significance for improving the detection sensitivity in the fields of radio astronomy and deep space exploration. At the same time, since the design can achieve an equivalent noise temperature of 10K at room temperature, the equivalent noise temperature requirements of radio astronomy and deep space exploration can be met, and the detection requirements of a certain distance can be met at room temperature, which is of great significance for avoiding the use of low-temperature dewars and refrigerators, realizing the miniaturization of the receiver, and reducing the cooling cost of the receiver. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0021] Figure 1 The schematic diagram of the circuit topology of a heterogeneous low noise amplifier based on an ultra-low noise broadband matching network;
[0022] Figure 2 It is a schematic diagram of the circuit principle of a heterogeneous low noise amplifier based on an ultra-low noise broadband matching network;
[0023] Figure 3 This is a schematic diagram of the structure of a broadband step impedance matching circuit and an equivalent schematic diagram of Example 1;
[0024] Figure 4 This is a schematic diagram of the circuit structure of the feeding part of Example 1;
[0025] Figure 5 is the gain curve of Example 1 used in the present invention;
[0026] Figure 6 The S11 return loss curve of Example 1 used in the invention;
[0027] Figure 7 The S22 return loss curve of Example 1 used in the invention;
[0028] Figure 8 The noise coefficient curve of Example 1 used in the present invention;
[0029] Fig. 9 It is the stability curve of Example 1 used in the present invention. DETAILED DESCRIPTION
[0030] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, a method for extracting parameters of a HEMT small signal equivalent circuit model based on the Grey Wolf algorithm proposed in the present invention is described in detail below in conjunction with the accompanying drawings and specific implementation methods.
[0031] The aforementioned and other technical contents, features and effects of the present invention can be clearly presented in the following detailed description of the specific implementation modes in conjunction with the drawings. Through the description of the specific implementation modes, the technical means and effects adopted by the present invention to achieve the predetermined purpose can be more deeply and specifically understood. However, the attached drawings are only for reference and explanation, and are not used to limit the technical solutions of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0032] The present invention provides a heterogeneous low noise amplifier based on an ultra-low noise broadband matching network, and realizes an ultra-low noise high gain low noise amplifier heterogeneous circuit working in the L band based on InP high electron mobility transistor (HEMT) and SiGe heterojunction bipolar transistor (HBT) technology. The specific circuit framework is as follows Figure 1 As shown, the circuit includes an input-output matching structure, a first-stage amplifying transistor, a second-stage amplifying transistor, a third-stage amplifying transistor, and an interstage matching network. The specific structure is that the input port is connected to the low-noise input matching network, the low-noise input matching network is connected to the gate of Transistor1 InP transistor, the drain of Transistor1 InP transistor is connected to the source of Transistor2 SiGe transistor through the common-source structure interstage matching network, the drain of Transistor2 SiGe transistor is connected to the common-source output interstage matching network, the common-source output matching network is connected to the source of Transistor3 SiGe transistor, and the drain of Transistor3 SiGe transistor is connected to the broadband output matching network, as shown in FIG. Figure 1 shown.
[0033] The specific circuit principle structure is as follows Figure 2 As shown:
[0034] The input terminal RFin is connected to the ultra-low noise input matching step impedance microstrip circuit, capacitor C1, capacitor C2, and inductor L1, wherein inductor L1 is grounded and connected to the gate of Transistor 1. The source of the transistor is grounded through inductor TLs, and the drain of Transistor 1 is connected to the gate of Transistor 2 through capacitor C3, capacitor C4, and inductor L2; the gate of Transistor 2 is connected to the gate of Transistor 3 through resistor R1, capacitor C5, capacitor C6, and inductor L3; the drain of Transistor 3 is connected to the output terminal RFout through capacitor C7, inductor L4, resistor R2, and the output step impedance broadband matching network.
[0035] In order to match the 50 ohm input signal to the optimal noise impedance of the InP transistor within a broadband, an ultra-low noise microstrip matching network and discrete capacitors and inductors are used as the input matching network, such as Figure 3 As shown, the input matching microstrips TL1 and TL2 are each equivalent to a T-shaped network, thereby increasing the degree of freedom of circuit matching to better achieve broadband effects. The broadband step impedance microstrip matching circuit and capacitors C1, C2, and inductor L1 form a low-noise input matching network, which functions to match the transistor's optimal noise impedance to the standard 50 ohms; at the same time, the source equivalent inductance microstrip TLs is used as source feedback to improve the contradiction between the optimal noise matching and the maximum gain matching, while increasing the stability of the circuit. The above work together to achieve good noise performance.
[0036] If discrete components are used to achieve this effect, four inductors and two capacitors are required, which will complicate the input network and introduce additional noise. For RF receivers, the receiver noise is
[0037]
[0038] Where: Tsys is the noise of the receiver, T1 and G1 are the noise and gain of the pre-low noise amplifier respectively, and Ta is the sum of the noise of all levels other than the pre-LNA. Considering that the gain of the pre-LNA is generally large (>30dB, converted to a linear value of >1000), the receiver noise is mainly determined by the noise characteristics of the pre-LNA. Therefore, the input matching almost determines the noise performance of the low noise amplifier. On the basis of ensuring that S11 is less than -10dB, the input matching of the LNA mainly considers noise matching. The transmission line structure has been widely used in broadband matching circuits. At the same time, many designs show that the transmission line structure has better noise performance than the pure capacitor-inductor matching structure. Therefore, the present invention adopts a step impedance matching design as the input to reduce the circuit noise coefficient.
[0039] Dual power supply network circuit diagram Figure 4 As shown, it includes the source and drain protection resistors R g1 With R d1 , choke inductance L g1 With L g2 , DC blocking capacitors C2 and C3, bypass capacitor C g1 , C g2 The use of this structure can reduce the use of single-power supply voltage divider resistors and further reduce the introduction of power supply noise.
[0040] like Figure 5 As shown, through the simulation of the low noise amplifier of the present application, it can be seen that within 1-2 GHz, the gain S21>40 dB.
[0041] like Figure 6 As shown, through the simulation of the low noise amplifier of the present application, it can be seen that within 1-2.1 GHz, the input return loss S11<-10 dB.
[0042] like Figure 7 As shown, through the simulation of the low noise amplifier of the present application, it can be seen that within 1-2.1 GHz, the output return loss S22<-10 dB.
[0043] like Figure 8 As shown, through the simulation of the low noise amplifier of the present application, it can be seen that within 1-2.1 GHz, the noise figure nf(2) is <0.15 dB.
[0044] like Fig. 9 As shown, through the simulation of the low noise amplifier of the present application, it can be seen that the stability factor is within the range of 0.5-2.5 GHz, and the stability factor μ>1 (Mu in ADS), which meets the absolute stability requirement.
[0045] The input end of the invention is connected to a low-noise input matching network, a three-stage common source amplification structure is adopted, the first-stage amplification transistor adopts an InP transistor with excellent noise performance, the first-stage amplification transistor and the third-stage amplification transistor adopt a low-cost SiGe process NXP BFU790F transistor to improve the gain, and the whole adopts a dual power supply network. The amplifier of the invention is absolutely stable in the working frequency band, and achieves good results of an average equivalent noise temperature of 10K, a gain of 40dB, and S11, S22<-10dB in the L band (1GHz-2GHz) at room temperature.
Claims
1. A heterogeneous low noise amplifier based on an ultra-low noise broadband matching network, characterized in that: It includes an input end, an output end, a broadband microstrip ultra-low noise input matching network, a three-stage transistor cascade amplifier circuit and a broadband microstrip output matching network, wherein the microstrip ultra-low noise input matching network and the input of the discrete capacitor and inductor serve as the input end of the radio frequency signal, and the circuit performs three-stage transistor amplification on the received radio frequency signal and outputs it through the output end; the heterogeneous low noise amplifier of the broadband ultra-low noise input matching network includes a DC bias circuit, two different transistors, a broadband low noise matching network, and a broadband output matching network, wherein a dual power supply mode is adopted so that the DC bias circuit is respectively connected to the gate (G) and drain (D) of the transistor, and a choke inductor is adopted to block the radio frequency signal from flowing into the power supply.
2. The heterogeneous low noise amplifier based on ultra-low noise broadband matching network according to claim 1, characterized in that: The three-stage transistor cascade amplifier circuit comprises: a first-stage amplifier transistor, which is an InP transistor.
3. The heterogeneous low noise amplifier based on ultra-low noise broadband matching network according to claim 1, characterized in that: The three-stage transistor cascade amplifier circuit comprises: a second-stage amplifier transistor and a third-stage amplifier transistor, both of which are SiGe transistors.
4. The heterogeneous low noise amplifier based on ultra-low noise broadband matching network according to claim 2, characterized in that: The dual power supply mode provides four bias voltages, and the gate of the first-stage amplifier transistor is connected to power supply 1.
5. The heterogeneous low noise amplifier based on ultra-low noise broadband matching network according to claim 2, characterized in that: The gates of the secondary amplifying transistor and the tertiary amplifying transistor are commonly connected to the power supply 2 .
6. The heterogeneous low noise amplifier based on ultra-low noise broadband matching network according to claim 2, characterized in that: The drain of the first-stage amplifying transistor is connected to the power supply 3 .
7. The heterogeneous low noise amplifier based on ultra-low noise broadband matching network according to claim 2, characterized in that: The drains of the secondary amplifying transistor and the tertiary amplifying transistor are commonly connected to the power supply 4 .
8. The heterogeneous low noise amplifier based on ultra-low noise broadband matching network according to claim 1, characterized in that: The input end is connected to the input matching network, the input matching network is connected to the gate of the first-stage amplifier transistor, the drain of the first-stage amplifier transistor is connected to the gate of the second-stage amplifier transistor through the common-source structure inter-stage matching network, the drain of the second-stage amplifier transistor is connected to the common-source output inter-stage matching network, the common-source output matching network is connected to the gate of the third-stage amplifier transistor, and the drain of the third-stage amplifier transistor is connected to the broadband output matching network.
9. The heterogeneous low noise amplifier based on ultra-low noise broadband matching network according to claim 1, characterized in that: The input terminal RFin is connected to the ultra-low noise input matching step impedance microstrip circuit, capacitor C1, capacitor C2, and inductor L1, wherein the inductor L1 is grounded and connected to the gate of the first-stage amplifier transistor, the source of the transistor is grounded through the inductor TLs, the drain of the first-stage amplifier transistor is connected to the gate of the second-stage amplifier transistor through the capacitor C3, capacitor C4, and inductor L2; the gate of the second-stage amplifier transistor is connected to the gate of the third-stage amplifier transistor through the resistor R1 and capacitor C5 and capacitor C6, the inductor L3; the drain of the third-stage amplifier transistor is connected to the output terminal RFout through the capacitor C7, the inductor L4, the resistor R2, and the output step impedance broadband matching network.